KR102413301B1 - Light emitting device package - Google Patents

Abstract

Embodiments include a package body having a cavity; a light emitting device flip-bonded to the bottom surface of the cavity; and a molding part disposed between the bottom surface of the cavity and the light emitting device, wherein the molding part provides a light emitting device package formed by reacting one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, and 2-Bromoethylsilsesquioxane.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device, and more particularly, to a light emitting device package in which the light emitting device is firmly molded and light output is improved.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used in optoelectronics and electronic devices due to their many advantages, such as wide and easily tunable band gap energy.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors are developed with thin film growth technology and device materials such as red, green, blue, and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors. It has the advantage of being friendly.

Accordingly, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, and white light emission that can replace a fluorescent lamp or incandescent light bulb Applications are expanding to diode lighting devices, automobile headlights and traffic lights.

The light emitting device may use GaN, which is a nitride-based semiconductor, as a light emitting structure, and the light emitting structure may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

In the light emitting device package, the light emitting device may be disposed in connection with the lead frame, and current may be supplied to the lead frame from an external power source to drive the light emitting device.

In this case, molding is performed to protect the light emitting device or the wire connecting the light emitting device to the lead frame, and an epoxy-based material may be used as a molding material.

However, when the light emitting device emits light in the ultraviolet wavelength region, the epoxy-based material has a high light absorption rate and the epoxy may be damaged by the light in the ultraviolet wavelength region.

The embodiment is intended to firmly mold a light emitting device and to improve the light output of a light emitting device package.

Embodiments include a package body having a cavity; a light emitting device flip-bonded to the bottom surface of the cavity; and a molding part disposed between the bottom surface of the cavity and the light emitting device, wherein the molding part provides a light emitting device package formed by reacting one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, and 2-Bromoethylsilsesquioxane.

The molding part may include silicon oxide (SiO ₂ ).

The molding part may include one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, and 2-Bromoethylsilsesquioxane.

A void may be formed inside the cavity, and a cover may be disposed on the opening of the cavity.

The package body may include a plurality of first ceramic layers, and the first ceramic layer forming the bottom surface of the cavity and the first ceramic layer forming the side surface of the cavity may be different from each other.

The package body may further include a plurality of contact electrodes disposed between the plurality of first ceramic layers.

It may further include a plurality of connection electrodes connecting the contact electrodes disposed at different heights.

The light emitting device may be flip-bonded through bumps, and the molding part may be disposed outside the bumps.

Another embodiment is a package body; a light emitting device flip-bonded on the package body; It provides a light emitting device package including a molding part disposed on the periphery of the light emitting device, wherein the molding part is formed by reacting one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, 2-Bromoethylsilsesquioxane and Polysilazane.

The molding part may be further disposed between the package body and the light emitting device.

Since the light emitting device package according to the embodiments forms silicon oxide (SiO ₂ ) by reacting a polymer material with ultraviolet light and heat, a molding part is formed in a narrow area between the bottom surface of the package body and the light emitting device, and foreign substances from the outside are formed. Intrusion into this light emitting element can be prevented. In addition, since silicon oxide absorbs less ultraviolet rays and is not damaged by ultraviolet rays, the light efficiency of the light emitting device package may be improved.

1 is a view showing a first embodiment of a light emitting device package,
Figure 2 is a view showing the light emitting device of Figure 1,
3 is a view showing a process of forming a molding part of the light emitting device package of FIG. 1;
4 is a view showing a second embodiment of a light emitting device package,
5 shows a sterilization apparatus using the above-described light emitting device package.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention that can specifically realize the above objects will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed on "on or under" of each element, on (above) or below (on) or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as up (up) or down (down) (on or under), the meaning of not only an upward direction but also a downward direction based on one element may be included.

1 is a view showing a first embodiment of a light emitting device package.

In the light emitting device package 100 according to the embodiment, the package body includes a plurality of first ceramic layers 111 to 116 . The package body can be implemented using either High Temperature Cofired Ceramics (HTCC) or Low Temperature Cofired Ceramics (LTCC) technology.

When the package body is a plurality of first ceramic layers 111 to 116 as in the present embodiment, the thickness of each layer may be the same or different. The package body may be made of an insulating material of nitride or oxide, and may include, for example, Al ₂ O ₃ , SiO ₂ , Si _x O _y , Si ₃ N _y SiO _x N _y or AlN.

The package body may have a cavity, some of the first ceramic layers 111 to 112 may be located on the bottom surface of the cavity, and the remaining first ceramic layers 113 to 116 may form a side surface of the cavity. have.

The heat dissipation unit 120 is inserted into the first ceramic layers 111 to 112 positioned on the bottom surface of the cavity, and the second ceramic layer 130 may be disposed on the heat dissipation unit 120 . The second ceramic layer 130 may prevent the heat dissipation unit 120 from protruding upward due to thermal expansion, and may be omitted in some cases.

The light emitting device 200 is disposed on the second ceramic layer 130 positioned on the bottom surface of the cavity, and may be disposed in a flip bonding method. A flip bonding method of the light emitting device 200 will be described as follows.

The sub-mount 140 may be disposed on the second ceramic layer 130 , and the first bonding electrode 142 and the second bonding electrode 146 may be disposed on the sub-mount 140 . The first electrode and the second electrode of the light emitting device 200 may electrically contact the first bonding electrode 142 and the second bonding electrode 146 .

The first bonding electrode 142 and the second bonding electrode 146 may be coupled to the first electrode and the second electrode through bumps, respectively, and the bumps may be made of a conductive material.

FIG. 2 is a view showing the light emitting device of FIG. 1 .

The light emitting device 200 according to the embodiment includes a light emitting structure 220 including a substrate 210, a first conductivity type semiconductor layer 222, an active layer 224, and a second conductivity type semiconductor layer 226; It includes a first electrode 262 and a second electrode 266 .

The substrate 210 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ may be used.

Since the substrate 210 and the light emitting structure 220 are different materials, the lattice constant mismatch is very large and the difference in the coefficient of thermal expansion therebetween is also very large. melt-back), cracks, pits, and poor surface morphology may occur.

Accordingly, the buffer layer 215 may be formed between the substrate 210 and the light emitting structure 220 .

The first conductivity-type semiconductor layer 222 may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a first conductivity-type dopant. The first conductivity type semiconductor layer 222 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, may be formed of any one or more of GaAs, GaAsP, AlGaInP.

When the first conductivity-type semiconductor layer 222 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 222 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 224 is disposed between the first conductivity-type semiconductor layer 222 and the second conductivity-type semiconductor layer 226 , and includes a single well structure, a multi-well structure, a single quantum well structure, and a multi-quantum well (MQW). Well) structure, it may include any one of a quantum dot structure, or a quantum wire structure.

The active layer 224 is formed of a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs) using a III-V group element compound semiconductor material. It may be formed in any one or more pair structure of /AlGaAs, GaP(InGaP)/AlGaP, but is not limited thereto.

The well layer may be formed of a material having an energy band gap smaller than that of the barrier layer. When the active layer 224 generates light of a deep UV wavelength, the active layer 224 may have a multi-quantum well structure, and specifically, Al _x Ga _(1-x) N (0<x< 1) and the quantum well layer including Al _y Ga _(1-y) N (0<x<y<1) may have a multi-quantum well structure in which the pair structure is 1 period or more, and the quantum well layer may include a dopant of a second conductivity type, which will be described later.

The second conductivity type semiconductor layer 226 may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 226 may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a second conductivity-type dopant.

The second conductivity type semiconductor layer 226 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP, for example, the second conductivity type semiconductor layer 226 may be made of Al _x Ga _(1-x) N have.

When the second conductivity-type semiconductor layer 226 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 226 may be formed as a single layer or a multilayer, but is not limited thereto.

In the light emitting device 200 according to the embodiment, the active layer 224 may emit ultraviolet light. Ultraviolet rays can be divided into three (UV-A, UV-B, UV-C) according to the wavelength band, UV-A is UV-A with a wavelength of 320 nm to 400 nm, and UV-B is UV with a wavelength of 290 nm to 320 nm. , UV-C may be ultraviolet rays having a wavelength band of 290 nm or less.

In this case, the first conductivity-type semiconductor layer 222 may be formed of AlGaN doped with an n-type dopant, and the second conductivity-type semiconductor layer 226 may be formed of AlGaN doped with a p-type dopant.

An electron blocking layer (not shown) may be disposed between the active layer 224 and the second conductivity type semiconductor layer 226 . The electron blocking layer may have a superlattice structure. In the superlattice, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality may be arranged alternately with each other.

An ohmic contact layer 240 may be disposed on the second conductivity type semiconductor layer 226 . Since the second conductivity type semiconductor layer 226 has poor contact characteristics with the second electrode 266 to be described later, an ohmic contact layer 240 is disposed so that the second conductivity type semiconductor layer 226 is separated from the second electrode 266 . ) to improve the current spreading (spreading) characteristic. The ohmic contact layer 240 may be formed of AlGaN doped with a p-type dopant.

Mesa-etched from the ohmic contact layer 240 to the second conductivity type semiconductor layer 226 , the active layer 224 , and a portion of the first conductivity type semiconductor layer 222 , and the etched and exposed first conductivity type semiconductor layer 222 . ), the first electrode 262 may be disposed, and the second electrode 266 may be disposed on the second conductivity-type semiconductor layer 226 .

A first electrode 262 and a second electrode 266 may be disposed on the exposed upper surface of the first conductivity-type semiconductor layer 222 and the upper surface of the ohmic contact layer 240 , respectively.

The first electrode 262 and the second electrode 266 may be made of a conductive material, for example, a metal, and more specifically, aluminum (Al), titanium (Ti), chromium (Cr), nickel. It may include at least one of (Ni), copper (Cu), and gold (Au) to have a single-layer or multi-layer structure.

A passivation layer (not shown) may be disposed on edges and side surfaces of the upper surfaces of the first electrode 262 and the second electrode 266 , and on the side surface of the light emitting structure 220 exposed by mesa etching. The passivation layer may be formed of an insulating material, and the insulating material may be formed of a non-conductive oxide or nitride. As an example, the passivation layer may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

A molding unit 180 is disposed in a region between the bottom surface of the cavity and the light emitting device 200 , and the molding unit 180 includes the first and second bonding electrodes 142 and 146 , a bump, and the light emitting device 200 . ), the first and second electrodes 262 and 266 may be protected, and light emitted from the active layer 224 may not be damaged, particularly, by ultraviolet rays, and the light absorption rate in the ultraviolet wavelength region may be low.

The molding unit 180 includes silicon oxide (SiO ₂ ). At this time, the silicon oxide refers to silicon distinct from silica, and a combination of silicon and oxygen (...-Si-O- Si-O-...) as a main axis means a polymer.

It is difficult to inject the above-described silicon oxide into a narrow area on the second ceramic layer 130 and the light emitting device 200, and after disposing the silicon oxide in advance, the light emitting device 200 is disposed on the silicon oxide and fixed. difficult.

In the embodiment, a polymer material may be injected into the region on the second ceramic layer 130 and the light emitting device 200 by a method such as SOG (Spin on Glass) to form the molding part 180, and other spray It can be injected by a method such as a method or a dispensing method.

In this case, the polymer material may be one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, 2-Bromoethylsilsesquioxane, and Polysilazane (polysilazane).

After supplying the above-described material, when ultraviolet rays and heat of 200°C to 300°C are applied to the above-described polymer material, the polymer material reacts with the ultraviolet rays and heat to form silicon oxide (SiO ₂ ).

FIG. 3 is a view showing a process of forming a molding part of the light emitting device package of FIG. 1 , and shows a process in which the above-described polymer material reacts with ultraviolet rays and heat to form silicon oxide (SiO ₂ ).

The molding part 180 including silicon oxide (SiO ₂ ) may be disposed on the outside of the bump as shown, and some polymer materials may remain without sufficiently reacting by ultraviolet rays and heat, and the light emitting device package Silicon oxide may be further formed by further reaction by the heat and ultraviolet rays generated during use, and the refractive index of the silicon oxide formed after the reaction may be 1.5 to 1.6.

The first and second bonding electrodes 142 and 146 may be respectively bonded to the first-first contact electrode 151 and the first-second contact electrode 161 with a wire.

The first-first contact electrode 151 and the first-second contact electrode 161 are disposed on the first ceramic layer 112 constituting the bottom surface of the cavity, and are disposed between the first ceramic layers 111 and 112 . 1 - 2 contact electrodes 152 and 2 - 2 contact electrodes 162 are disposed on the first ceramic layer 111 , and the 1-3 contact electrodes 153 and 2-3 contact electrodes are disposed on the lower surface of the first ceramic layer 111 . An electrode 163 may be disposed.

In addition, two connection electrodes 151a and 161a are disposed through the first ceramic layer 112 to connect the 1-1-th contact electrode 151 and the 1-2-th contact electrode 161 respectively. It may be electrically connected to the contact electrode 152 and the second-second contact electrode 162 .

In addition, two connection electrodes 152a and 162a are disposed through the first ceramic layer 111 to connect the 1-2 first contact electrode 152 and the 2-2 second contact electrode 162 to the 1-3 th contact electrode, respectively. It may be electrically connected to the contact electrode 153 and the second-third contact electrode 163 .

The first ceramic layer 116 disposed on the uppermost portion may be narrower than the lower first ceramic layer 115 , and thus the upper surface of the first ceramic layer 115 may be partially exposed.

The cover 150 is disposed on the exposed surface of the first ceramic layer 115 , and the cover 150 may be made of a material having excellent light transmittance in the ultraviolet region, and may be formed from the upper surface of the first ceramic layer 115 and It may be adhered to the adhesive layer 155 . The cover 150 may be disposed in the opening of the light emitting device package 100 .

The inner region of the cavity of the light emitting device package 100 may be filled with air by forming a void, and the cover 150 is sealed to the package body through the adhesive layer 155 to prevent penetration of foreign substances from the outside. can do.

In the light emitting device package according to the embodiment, silicon oxide (SiO ₂ ) is formed by reacting the above-described polymer material with ultraviolet rays and heat, so that a molding part is formed in a narrow area between the second ceramic layer 130 and the light emitting device 200 . 180 is formed to prevent foreign substances from entering the light emitting device 200 . In addition, since silicon oxide absorbs less ultraviolet rays and is not damaged by ultraviolet rays, the light efficiency of the light emitting device package may be improved.

4 is a view showing a second embodiment of a light emitting device package.

In the light emitting device package 400 according to the present embodiment, the package body 310 does not have a cavity and is disposed flat.

The first bonding electrode 342 and the second bonding electrode 346 are disposed on the package body 310 , and the light emitting device 200 is bumped on the first bonding electrode 342 and the second bonding electrode 346 . Flip bonding is performed through a bump, and the light emitting device 200 may have the same structure as that shown in FIG. 2 .

The molding part 380 is disposed in a region between the package body 310 and the light emitting device 200 , around the bump, and around the light emitting device 200 .

The composition of the molding part 380 in this embodiment may be the same as that of the molding part 180 of FIG. 1 , and may include silicon oxide (SiO ₂ ).

The molding unit 380 is formed by injecting a polymer material, for example, one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, 2-Bromoethylsilsesquioxane, and Polysilazane by a method such as SOG (Spin on Glass), followed by ultraviolet rays and heat at 200°C to 300°C. is added to the above-described polymer material, the polymer material reacts with ultraviolet rays and heat to form silicon oxide (SiO ₂ ).

In addition, the molding part 380 including silicon oxide (SiO ₂ ) may be disposed on the outside of the bump as shown, and some polymer materials may remain without sufficiently reacting by ultraviolet rays and heat.

The light emitting device package may mount one or a plurality of the above light emitting devices, but is not limited thereto.

When the light emitting device emits light in the visible ray wavelength region, the above-described light emitting device package may be used as a light source of a lighting system, and may be used, for example, in a backlight unit and a lighting device of an image display device.

When used as a backlight unit of an image display device, it may be used as an edge-type backlight unit or as a direct-type backlight unit, and when used in a lighting device, it may be used for a luminaire or a bulb-type light source.

When the light emitting device emits light in the ultraviolet wavelength region, the above-described light emitting device package may be used in a sterilization device.

5 shows a sterilization apparatus using the above-described light emitting device package.

Referring to FIG. 5 , the sterilization device 500 includes a light emitting module unit 510 mounted on one surface of a housing 501 and diffuse reflection members 530a and 530b for diffusely reflecting the emitted deep ultraviolet wavelength band light, and , and a power supply unit 520 for supplying available power required by the light emitting module unit 510 .

First, the housing 501 has a rectangular structure and may be formed in an integrated, that is, a compact structure in which the light emitting module unit 510, the diffuse reflection members 530a and 530b, and the power supply unit 520 are all built-in. In addition, the housing 501 may have a material and shape effective to dissipate heat generated inside the sterilizer 500 to the outside. For example, the material of the housing 501 may be made of any one of Al, Cu, and alloys thereof. Accordingly, the heat transfer efficiency of the housing 501 with the outside air may be improved, and the heat dissipation characteristics may be improved.

Alternatively, the housing 501 may have a unique outer surface shape. For example, the housing 501 may have an outer surface shape protruding in the shape of a corrugation or mesh, or an unspecified concavo-convex pattern, for example. Accordingly, the heat transfer efficiency of the housing 501 with the outside air may be further improved, so that the heat dissipation characteristics may be improved.

Meanwhile, attachment plates 550 may be further disposed at both ends of the housing 501 . The attachment plate 550 refers to a member of the bracket function used to restrain and fix the housing 501 to the entire equipment, as illustrated in FIG. 15 . The attachment plate 550 may be formed to protrude from both ends of the housing 501 in one direction. Here, one direction may be an inner direction of the housing 501 in which deep ultraviolet rays are emitted and diffuse reflection occurs.

Accordingly, the attachment plates 550 provided on both ends of the housing 501 provide a fixed area with the entire equipment, so that the housing 501 can be fixedly installed more effectively.

The attachment plate 550 may have any one form of a screw fastening means, a riveting fastening means, an adhesive means, and a detaching means, and the methods of these various coupling means are obvious at the level of those skilled in the art, so a detailed description will be omitted here. do.

Meanwhile, the light emitting module unit 510 is disposed to be mounted on one surface of the above-described housing 501 . The light emitting module unit 510 serves to emit deep UV to sterilize microorganisms in the air. To this end, the light emitting module unit 510 includes a substrate 512 and a plurality of light emitting device packages 100 mounted on the substrate 512 . Here, the light emitting device package may be the light emitting device package 100 illustrated in FIG. 2 .

The substrate 512 is arranged in a single row along the inner surface of the housing 501 and may be a PCB including a circuit pattern (not shown). However, the substrate 512 may include not only a general PCB, but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB, and the like, but is not limited thereto.

Next, the diffuse reflection reflective members 530a and 530b refer to members in the form of a reflective plate formed to forcibly reflect the deep ultraviolet rays emitted from the above-described light emitting module unit 510 . The front shape and arrangement shape of the diffuse reflection members 530a and 530b may have various shapes. As the planar structure (eg, radius of curvature, etc.) of the diffuse reflection reflective members 530a and 530b is slightly changed and designed, the diffusely reflected deep UV rays are irradiated to overlap, and the irradiation intensity is strengthened, or the width of the area to be irradiated is expanded can be

The power supply unit 520 receives power and serves to supply available power required by the above-described light emitting module unit 510 . The power supply 520 may be disposed in the above-described housing 501 . As illustrated in FIG. 15 , the power supply unit 520 may be disposed on the inner wall side of the space between the diffuse reflection members 530a and 530b and the light emitting module unit 510 . In order to introduce external power to the power supply unit 520 , a power connection unit 540 electrically connecting each other may be further disposed.

As illustrated in FIG. 5 , the shape of the power connection part 540 may be planar, but may have the shape of a socket or cable slot to which an external power cable (not shown) can be electrically connected. In addition, the power cable has a flexible extension structure, so that it can be easily connected to an external power source.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in the range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 300: light emitting device package
111 to 116: first ceramic layer 120: heat dissipation unit
130: second ceramic layer 140: sub-mount
142, 342: first bonding electrode 146, 346: second bonding electrode
150: cover
151, 152, 153, 161, 162, 162: 1-1 contact electrode to 2-3 contact electrode
151a, 152a, 161a, 162a: connecting electrode
155: adhesive layer 180, 380: molding part
200: light emitting device 310: package body
500: sterilizer

Claims (15)

a package body having a cavity;
a light emitting device flip-bonded to the bottom surface of the cavity;
and a molding part disposed between the bottom surface of the cavity and the light emitting device,
The molding part is formed by reacting one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane, and 2-Bromoethylsilsesquioxane, and at least one of 2-Acetoxyethylsilsesquioxane, 2-Chloroethylsilsesquioxane and 2-Bromoethylsilsesquioxane remains in the light emitting device package. According to claim 1,
The molding part is a light emitting device package further comprising a silicon oxide (SiO ₂ ). The light emitting device package of claim 1 , wherein a void is formed in the cavity, and a cover is disposed in the opening of the cavity.
The package body includes a plurality of first ceramic layers, and a first ceramic layer forming a bottom surface of the cavity and a first ceramic layer forming a side surface of the cavity are different from each other. 4. The method of claim 3,
Further comprising a plurality of contact electrodes disposed between the plurality of first ceramic layers constituting the package body,
The light emitting device package further comprising a plurality of connection electrodes connecting the contact electrodes disposed at different heights. According to claim 1,
The light emitting device package is flip-bonded through bumps, and the molding part is also disposed outside the bumps. delete delete delete delete delete delete delete delete delete delete

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