KR20200018270A - Film-forming apparatus, film-forming system, and film-forming method - Google Patents

Abstract

The present invention provides a film-forming apparatus, a film-forming system, and a film-forming method which can perform sputtering film formation with a high degree of freedom on the basis of oblique film formation. The film-forming apparatus comprises: a processing chamber; a first sputtering particle emission unit and a second sputtering particle emission unit having targets to emit sputtering particles in different oblique directions in a processing space; a sputtering particle blocking plate having a passage hole through which the sputtering particles pass; a substrate support unit to support a substrate; a substrate moving mechanism to linearly move the substrate; and a control unit. The control unit controls to move the substrate linearly and controls the emission of sputtering particles from the first sputtering particle emission unit and the second sputtering particle emission unit. The sputtering particles emitted from the first sputtering particle emission unit and the second sputtering particle emission unit pass through the passage hole to be deposited on the substrate.

Description

FILM-FORMING APPARATUS, FILM-FORMING SYSTEM, AND FILM-FORMING METHOD}

The present disclosure relates to a film forming apparatus, a film forming system, and a film forming method.

In the manufacture of an electronic device such as a semiconductor device, a film forming process of forming a film on a substrate is performed. As a film-forming apparatus used for a film-forming process, the sputtering apparatus is known.

Patent Literature 1 proposes a technique for injecting sputtered particles obliquely into the substrate as a technique for achieving high directivity film formation in which the sputtering particle incident direction is aligned with respect to the pattern on the substrate.

The film-forming apparatus of patent document 1 is a shield which has a vacuum container, the board | substrate holding stand provided in the vacuum container, the target holder holding a target, and the opening (through hole) provided between the target holder and a board | substrate holding stand. Has an assembly. Then, the sputtering particles released from the target are passed through the openings of the shielding assembly while the substrate holding table is moved by the moving mechanism, and the sputtering particles are incident on the substrate at a predetermined angle.

Japanese Patent Publication No. 2015-67856

The present disclosure provides a film forming apparatus, a film forming system, and a film forming method capable of performing sputtering film having a high degree of freedom based on inclined film forming.

The film-forming apparatus which concerns on one aspect of this indication is the 1st sputtering particle which respectively has a process chamber which defines the process space in which the film-forming process is performed with respect to a board | substrate, and the target which discharge | releases sputtering particle in the said inclination direction from said process space, respectively. A sputtering particle shielding plate having a discharging portion and a second sputtering particle discharging portion, a passage hole through which the sputtered particles discharged from the first sputtering particle discharging portion and the second sputtering particle discharging portion pass, and the above of the processing space A substrate support for supporting a substrate provided on a side opposite to the first sputtered particle discharging portion and the second sputtering particle discharging portion with a sputtering particle shielding plate interposed therebetween, and a substrate for linearly moving the substrate supported on the substrate support portion. A moving mechanism, said first sputtered particle ejecting portion, said second sputtering particle ejecting portion, and an image A control unit for controlling a substrate moving mechanism, wherein the control unit sputters from the first sputtered particle discharging unit and the second sputtering particle discharging unit while controlling the substrate moving mechanism to move the substrate linearly. The release of particles is controlled, and the sputtered particles released from the first sputtered particle discharge portion and the second sputtered particle discharge portion pass through the passage hole and are deposited on the substrate.

According to the present disclosure, sputtering film formation with high degree of freedom can be performed on the basis of gradient film formation.

1 is a longitudinal cross-sectional view illustrating a film forming apparatus according to an embodiment.
FIG. 2 is a horizontal sectional view taken along line II-II of FIG. 1.
3 is a cross-sectional view showing another example of the sputtering particle shielding plate.
4: A is a schematic diagram for demonstrating the implementation state of the 1st example of the film-forming method using the film-forming apparatus which concerns on one Embodiment.
4B is a schematic view for explaining an implementation state of the first example of the film forming method using the film forming apparatus according to the embodiment.
4C is a schematic view for explaining an implementation state of the first example of the film forming method using the film forming apparatus according to the embodiment.
4D is a schematic view for explaining an implementation state of the first example of the film forming method using the film forming apparatus according to the embodiment.
5 is a cross-sectional view showing a substrate having a trench pattern applicable to the film forming method.
FIG. 6: A is sectional drawing which shows the state at the time of performing 1st film-forming with respect to the board | substrate which has the trench pattern of FIG. 5 in the 1st example of the film-forming method. FIG.
FIG. 6B is a cross-sectional view showing a state when the second film formation is performed on the substrate in the state of FIG. 6A after the first film formation.
6C is a cross-sectional view showing a state in which the first film formation and the second film formation are repeatedly grown in the vertical direction in the first example of the film formation method.
FIG. 7 shows the state of film growth when the output at the first deposition is made larger than the output at the second deposition when the first and second depositions are repeated in the first example of the deposition method. It is a cross section.
FIG. 8: is sectional drawing which shows the shielding plate which has two through-holes and two pins provided around these, and mutually differing in angle.
FIG. 9 is a cross-sectional view showing a state where the first film formation and the second film formation are repeatedly formed using the shield plate of FIG. 8.
FIG. 10: A is sectional drawing which shows typically the case where two targets are comprised from the material from which etching selectivity differs, and the laminated structure similar to FIG. 6C was formed from the different material.
FIG. 10B is a cross-sectional view showing a state in which a portion of the film and the convex portion of the other material is etched using the film of one material which is etched from the structure of FIG. 10A as a mask.
FIG. 11: is a schematic diagram for demonstrating the implementation state of the 2nd example of the film-forming method using the film-forming apparatus which concerns on one Embodiment.
FIG. 12 is a cross-sectional view showing a state in which a film is formed on the substrate having the trench pattern in FIG. 5 by the second example of the film formation method.
It is a figure which shows an example of arrangement | positioning of two target.
13B is a diagram illustrating another example of the arrangement of two targets.
14 is a schematic block diagram showing an example of a film forming system according to the second embodiment.
FIG. 15 is a cross-sectional view illustrating the first film forming apparatus of the film forming system of FIG. 14.
It is a figure which shows the example which formed into a film by changing the rotation angle of the board | substrate in 2nd Embodiment.
FIG. 16B is a diagram illustrating an example in which the film is formed by changing the rotation angle of the substrate in the second embodiment.
17 is a schematic configuration diagram showing an example of a film formation system according to the third embodiment.
18 is a cross-sectional view illustrating the second film forming apparatus of the film forming system of FIG. 17.
19 is a schematic block diagram showing an example of a film forming system according to the fourth embodiment.
20 is a schematic block diagram showing an example of a film forming system according to the fifth embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is described concretely with reference to an accompanying drawing.

<1st embodiment>

First, the first embodiment will be described.

[Film forming apparatus]

FIG. 1: is a longitudinal cross-sectional view which shows the film-forming apparatus used in 1st Embodiment, and FIG. 2 is a horizontal sectional view by the II-II line of FIG.

The film forming apparatus 1 forms a film on the substrate W by sputtering. The film forming apparatus 1 includes a processing chamber 10, first and second sputtering particle discharging portions 12a and 12b, a substrate supporting portion 14, a substrate moving mechanism 16, and a sputtering particle shielding plate ( 18 and an exhaust device 20. Although the semiconductor wafer can be mentioned as a board | substrate W, for example, It is not limited to this.

The processing chamber 10 has a chamber main body 10a with an upper opening, and a lid 10b provided to cover the upper opening of the chamber main body 10a. The cover 10b has an inclined side surface. The interior of the processing chamber 10 is a processing space S in which a film forming process is performed.

An exhaust port 21 is formed at the bottom of the processing chamber 10, and the exhaust device 20 is connected to the exhaust port 21. The exhaust device 20 includes a pressure control valve and a vacuum pump, and the exhaust device 20 is configured to evacuate the processing space S to a predetermined degree of vacuum.

At the top of the processing chamber 10, a gas introduction port 22 for introducing gas into the processing space S is inserted. From the gas introduction port 22, a sputtering gas, for example, an inert gas, from a gas supply part (not shown) is introduced into the processing space S.

A carry-in and out port 23 for carrying in and carrying out the substrate W is formed on the side wall of the processing chamber 10. The inlet / outlet 23 is opened and closed by the gate valve 24. The processing chamber 10 is provided adjacent to the transfer chamber 50, and the processing chamber 10 communicates with the transfer chamber 50 by opening the gate valve 24. The inside of the conveyance chamber 50 is maintained by predetermined | prescribed vacuum degree, and the conveyance apparatus (not shown) for carrying in / out of the board | substrate W with respect to the process chamber 10 is provided in it.

The sputtering particle shielding plate 18 is comprised as a substantially plate-shaped member, and is arrange | positioned horizontally in the intermediate position of the height direction of the processing space S. As shown in FIG. The edge part of the sputtering particle shielding plate 18 is being fixed to the side wall of the chamber main body 10a. The sputtering particle shielding plate 18 divides the processing space S into the 1st space S1 and the 2nd space S2. The first space S1 is a space above the sputtered particle shield plate 18, and the second space S2 is a space below the sputtered particle shield plate 18.

The sputtering particle shielding plate 18 is formed with a slit through-hole 19 through which sputtering particles pass. The passage hole 19 penetrates in the plate | board thickness direction (Z direction) of the sputtering particle shielding plate 18. As shown in FIG. The passage hole 19 is formed long and thin by making the Y direction which is one horizontal direction in a figure into a long side direction. The length in the Y direction of the through hole 19 is formed longer than the diameter of the substrate W. As shown in FIG.

The first sputtered particle discharging portion 12a has a target holder 26a, a target 30a held by the target holder 26a, and a power supply 28a for applying a voltage to the target holder 26a. In addition, the second sputtering particle discharging portion 12b includes a target holder 26b, a target 30b held in the target holder 26b, and a power source 28b for applying a voltage to the target holder 26b. Have

The target holders 26a and 26b are made of a conductive material, are disposed above the sputtering particle shielding plate 18, and are provided on an inclined surface of the cover 10b of the processing chamber 10 via an insulating member. It is installed in different locations. In this example, although the target holder 26a and 26b are provided in the position which opposes each other through the through hole 19, it is not limited to this, It can provide in arbitrary positions. The target holders 26a and 26b hold the targets 30a and 30b so that the targets 30a and 30b are positioned obliquely upward with respect to the passage hole 19. The targets 30a and 30b are made of a material containing the constituent elements of the film to be formed, and may be a conductive material or a dielectric material.

The power sources 28a and 28b are electrically connected to the target holders 26a and 26b, respectively. The power supplies 28a and 28b may be direct current power supplies when the targets 30a and 30b are conductive materials, and may be high frequency power supplies when the targets 30a and 30b are dielectric materials. When the power sources 28a and 28b are high frequency power sources, they are connected to the target holders 26a and 26b via matching devices. By applying a voltage to the target holders 26a and 26b, the sputtering gas is dissociated around the targets 30a and 30b. Ions in the dissociated sputtering gas collide with the targets 30a and 30b, and sputtering particles, which are particles of the constituent material, are released from the targets 30a and 30b.

As described above, in the first and second sputtering particle discharging portions 12a and 12b, the target holders 26a and 26b are provided at different positions (positions facing each other in this example), so that they are retained therein. From the supported targets 30a and 30b, sputtering particles are discharged in different oblique directions (in this example, opposite directions). And the thing which passed through the through-hole 19 among sputtered particles discharged | emitted obliquely enters the board | substrate W, and is deposited.

Arrangement positions and directions of the targets 30a and 30b by the target holders 26a and 26b are arbitrary, and are set according to the pattern formed on the substrate W. As shown in FIG.

In addition, in this example, although the sputtering particle discharged | emitted from the target 30a and 30b is comprised so that all may pass through the passage hole 19, as shown in FIG. 3, you may let a separate passage hole pass. That is, the target is formed by providing two through holes 19a and 19b in the sputtering particle shielding plate 18 and providing pins 35a and 35b having collimator functions around the through holes 19a and 19b. The sputtered particles released from 30a and 30b can pass through the through holes 19a and 19b, respectively.

The board | substrate support part 14 is provided in the chamber main body 10a of the processing chamber 10, and is made to support the board | substrate W horizontally through the support pin 31. As shown in FIG. The board | substrate support part 14 is linearly movable by the board | substrate movement mechanism 16 in the X direction which is one horizontal direction. Therefore, the board | substrate W supported by the board | substrate support part 14 is linearly moved by the board | substrate movement mechanism 16 in a horizontal plane. The board | substrate movement mechanism 16 has the articulated arm part 32 and the drive part 33, and can drive the board | substrate support part 14 to an X direction by driving the articulated arm part 32 by the drive part 33. FIG. It is supposed to be done.

The film forming apparatus 1 further includes a control unit 40. The control unit 40 is made of a computer and controls each component of the film forming apparatus 1, for example, the power supplies 28a and 28b, the exhaust device 20, the driving unit 33, and the like. The control part 40 has the main control part which consists of CPU which actually performs these control, an input device, an output device, a display device, and a memory | storage device. In the storage device, parameters of various processes to be executed in the film forming apparatus 1 are stored, and a program for controlling the process to be executed in the film forming apparatus 1, that is, a storage medium in which the processing recipe is stored is set. The main control unit of the control unit 40 calls a predetermined process recipe stored in the storage medium, and causes the film forming apparatus 1 to execute a predetermined process based on the process recipe.

[Film formation method]

Next, the film-forming method in the film-forming apparatus of 1st Embodiment comprised as mentioned above is demonstrated.

First, after evacuating the processing space S in the processing chamber 10, a sputtering gas, for example, an inert gas, is introduced from the gas introduction port 22 into the processing space S and pressure-controlled at a predetermined pressure.

Subsequently, the board | substrate support part 14 is located in a board | substrate delivery position, the gate valve 24 is opened, and the board | substrate W is attached to the board | substrate support part 14 by the conveying apparatus (not shown) of the conveyance chamber 50. (On the support pin 31). Next, the conveying apparatus is returned to the conveying chamber 50, and the gate valve 24 is closed.

Subsequently, the sputtering particles are beveled from the targets 30a and 30b of the first and second sputtering particle ejecting portions 12a and 12b while moving the substrate W on the substrate support 14 in the X direction, which is one direction in the horizontal direction. Release it.

The release of the sputtered particles at this time applies a voltage from the power sources 28a and 28b to the target holders 26a and 26b so that ions in the sputtering gas dissociated around the targets 30a and 30b are the targets 30a and 30b. Is done by crashing into.

Sputtered particles discharged obliquely from the targets 30a and 30b of the first and second sputtering particle discharging portions 12a and 12b pass through the passage hole 19 formed in the sputtering particle shielding plate 18 and the substrate W. FIG. ) Is inclined at an angle, and is deposited on the substrate (W).

As in the prior art, when the substrate is scanned while sputtering particles are discharged obliquely from the target of one sputtering particle discharging portion, film formation can be performed with high directivity, but the film formation mode that can be applied is limited.

In contrast, in the present embodiment, the sputtered particles are emitted obliquely from the targets 30a and 30b attached to the two sputtered particle discharging portions 12a and 12b while scanning the substrate W. FIG. Thereby, it can form into various film-forming aspects by releasing sputtering particle | grains simultaneously or alternately from two targets, and also adjusting parameters, such as a direction of a target, the number of through-holes, and the angle of a pin. Therefore, sputtering film formation with a very high degree of freedom can be realized.

It demonstrates concretely below.

(1) The first example of the film formation method in the first embodiment

In a 1st example, the said film-forming apparatus 1 forms a film by using the 1st sputtering particle discharge part 12a and the 2nd sputtering particle discharge part 12b alternately.

4A to 4D are schematic diagrams for explaining the implementation state of the method of the present example.

At first, as shown in FIG. 4A, the substrate W is transferred to the substrate support 14 at the retracted position. Subsequently, as shown in FIG. 4B, sputtering only from the target 30b of the second sputtering particle discharging portion 12b while moving the substrate W on the substrate support 14 in the direction A in the drawing along the X direction. Particles P are released at an angle. Thereby, sputtering particle P is obliquely incident on the board | substrate W from one direction, and it deposits on a board | substrate (1st film-forming).

As shown in FIG. 4C, after all of the substrates W have passed through the passage holes 19 of the sputtering particle shielding plate 18, the sputtering from the target 30b by the second sputtering particle discharging portion 12b. Stop the particles.

Subsequently, as shown in FIG. 4D, the sputtering particles are only sputtered from the target 30a of the first sputtering particle discharging part 12a while moving the substrate W on the substrate support part 14 in the B direction opposite to the A direction. Release (P) at an angle. As a result, the sputtered particles are incident obliquely on the substrate W from the direction opposite to the conventional one direction, and are deposited on the substrate (second film formation).

The first and second depositions described above are alternately repeated one or more times.

This film formation method is selective on the convex part 51 with respect to the board | substrate W which has the trench pattern in which the convex part 51 and the recessed part (trench) 52 were alternately formed as shown in FIG. This is suitable for forming a film almost vertically.

When the first film formation using the second sputtered particle discharging portion 12b is performed on the substrate having the pattern of FIG. 5, as shown in FIG. 6A, the first film (overhanging on the right side of the convex portion 51) ( 53) is formed. However, even if the film release of sputtered particles from the second sputtered particle discharging portion 12b is carried out as it is, the overhang is severe and the film growth in the vertical direction is difficult.

In contrast, after performing the first film formation, the second film formation using the first sputtered particle release portion 12a is performed, so that the second film 54 overhanging on the left side of the convex portion 51, as shown in FIG. 6B, is formed. The film is formed and a foundation for film growth in the vertical direction is formed. This makes it possible to further form the film in the vertical direction.

Thus, by using the overhang cleverly, the first film formation and the second film formation are alternately repeated, so that the film can be grown in a substantially vertical direction as shown in Fig. 6C. When the film is a crystal, crystal growth can be performed in a substantially vertical direction.

At this time, the direction of film growth (crystal growth) can be changed by changing the output of the second sputtered particle discharging portion 12b at the time of first film formation and the output of the first sputtering particle discharging portion 12a at the time of second film formation. have. For example, by making the second sputtering particle discharging portion 12b higher than the first sputtering particle discharging portion 12a, as shown in FIG. 7, the first film 53 has the second film 54. Further, the film can be grown (crystal growth) slightly obliquely from the convex portion 51 to the right side in the figure. The same effect can also be obtained by providing a difference in the moving speed (scanning speed) of the substrate W when the first film 53 is formed and when the second film 54 is formed.

In addition, as shown in FIG. 8, the sputtering particle shielding plate 18 which has two through holes 19a and 19b and the fins 35a and 35b around them, and differs in the angle of the fins 35a and 35b is shown. Alternate film formation as described above may be performed using. In this case, sputtering particles discharged from the target 30b of the second sputtering particle discharging portion 12b pass through the passage hole 19b, and sputtered particles discharged from the first sputtering particle discharging portion 12a pass through the passage holes. Pass through 19a. Thereby, the angle of the sputtering particle | grains discharged | emitted from the 1st sputtering particle discharge | release part 12a, and incident on the board | substrate W, and the sputtering emitted from the 2nd sputtering particle discharge | release part 12b, and incident on the board | substrate W The angle of the particles can be different. 8 is an example in which the angle of the pin 35b is made higher than the pin 35a. Thereby, the crystal growth directions of the first film formation and the second film formation can be controlled.

Specifically, as shown in FIG. 9, sputtering particles are irradiated onto the substrate W in the elevation direction during the first film formation, and the first film 53 grows in the elevation direction, and sputtering particles during the second film formation. Is irradiated to the substrate in the low angle direction so that the second film 54 grows in the low angle direction. Even if the angles of the targets 30a and 30b are different, the same effect is obtained.

In addition, in the case of alternate film formation as in the present example, when the targets 30a and 30b are made of different materials and the first film formation and the second film formation are repeated, the first film 53 and the second film 54 are used. It is also possible to make the materials of different. For example, selective etching is possible by making the etching selectivity different in the first film 53 and the second film 54. Specifically, in the lamination structure of the first film 53 and the second film 54 similar to that of FIG. 6C, the second film 54 is closer than the first film 53 under a predetermined etching condition. The case of the material which is easy to etch is mentioned. As schematically shown in FIG. 10A, the second film 54 is selectively etched as shown in FIG. 10B when the laminate structure similar to that of FIG. 6C is etched under the predetermined etching conditions. Therefore, the 1st film 53 which is hard to be etched becomes a mask, and the part used as the base of the 2nd film 54 of the convex part 51 is etched. When the first film 53 is made of a wiring material, wiring having a width narrower than that of the convex portion 51 can be formed relatively easily.

(2) 2nd example of the film-forming method in 1st Embodiment

In a 2nd example, the said film-forming apparatus 1 forms a film using the 1st sputtering particle | grain release part 12a and the 2nd sputtering particle | grain release part 12b simultaneously.

Specifically, as shown in FIG. 11, the target of the first sputtered particle discharging portion 12a while moving the substrate W on the substrate support portion 14 in the A direction or the B direction, which is a direction parallel to the X direction. Sputtering particles are obliquely released from the target 30b of the 30a and the second sputtering particle discharging portions 12b. As a result, sputtered particles are obliquely incident on the substrate W from both directions, and are deposited on the substrate W. FIG. The film formation may be completed during the scanning of the substrate W once in the A direction or the B direction, or may be formed by emitting sputtered particles from the targets 30a and 30b while scanning alternately in the A and B directions.

Thus, by irradiating sputtering particle | grains with respect to the board | substrate W from two directions, the film | membrane 55 of the state which overhanged on both sides on the convex part 51 of the trench pattern as shown in FIG. ) Can be formed.

At this time, the incidence angle of the sputtered particles is adjusted by using the sputtering particle shielding plate 18 provided with two through holes 19a and 19b and the pins 35a and 35b around them as shown in FIG. 3. It can also be performed easily. That is, by adjusting the angles of the pins 35a and 35b, the incident angle of the sputtering particles can be adjusted to adjust the shape of the film 55 formed on the upper portion of the recess 51.

In addition, by changing the arrangement and angle of the two targets, the plane angle and the incident angle of the sputtered particles with respect to the substrate W can be changed in various ways, and various film formations are made according to the pattern formed on the substrate W. I can do it.

For example, as shown in FIG. 13A, the two targets 30a and 30b are disposed so as to be perpendicular to the scanning direction of the substrate W and parallel to each other, thereby forming a film as shown in FIG. 12. In addition, as shown in FIG. 13B, the two targets 30a and 30b are arranged obliquely and symmetrically with respect to a line parallel to the scanning direction of the substrate W, thereby sputtering from two directions on one side of the moving direction of the substrate. The particles can be irradiated onto the substrate W to form a film.

As described above, the film formation can be controlled by adjusting the angle of incidence by the pin around the passage hole and by appropriately adjusting the arrangement and angle of the target. That is, with respect to the various patterns of the substrate W, the position at which the film is formed, the shape of the film, and the like can be arbitrarily controlled.

<2nd embodiment>

Next, 2nd Embodiment is described.

FIG. 14: is a schematic block diagram which shows an example of the film-forming system which concerns on 2nd Embodiment, and FIG. 15 is sectional drawing which shows the 1st film-forming apparatus.

This film formation system 100 has a polygonal vacuum transfer chamber 101. The first film forming apparatus 102a and the second film forming apparatus 102b are connected to the vacuum transfer chamber 101 so as to face each other via the gate valve G, and the first and second film forming apparatuses 102a and 102b are connected to each other. The substrate rotation chamber 103 is connected between them. Moreover, two load lock chambers 104 are connected to the opposite side of the substrate rotation chamber 103 of the vacuum transfer chamber 101 via the gate valve G1. An atmospheric transfer chamber 105 is provided on the opposite side of the two load lock chambers 104 with the vacuum transfer chamber 101 interposed therebetween. The two load lock chambers 104 are connected to the atmospheric transfer chamber 105 via the gate valve G2. The load lock chamber 104 controls the pressure between atmospheric pressure and vacuum when conveying the substrate W between the atmospheric transfer chamber 105 and the vacuum transfer chamber 101.

The wall part on the opposite side to the load lock chamber 104 installation wall part of the atmospheric | transport conveyance chamber 105 has three carrier installation ports 106 which mount the carrier (FOUP etc.) C which accommodates the board | substrate W. As shown in FIG. . Moreover, the alignment chamber 107 which performs alignment by rotating the board | substrate W is provided in the side wall of the air | atmosphere conveyance chamber 105. FIG. Downflow of clean air is formed in the atmospheric conveyance chamber 105. Reference numeral 108 denotes a stage of the carrier C.

In the vacuum conveyance chamber 101, the 1st board | substrate conveyance mechanism 110 is provided. The substrate transfer module is configured by the vacuum transfer chamber 101 and the first substrate transfer mechanism 110. The 1st board | substrate conveyance mechanism 110 conveys the board | substrate W with respect to the 1st film-forming apparatus 102a, the 2nd film-forming apparatus 102b, the board | substrate rotation chamber 103, and the load lock chamber 104. As shown in FIG.

In the waiting conveyance chamber 105, the 2nd board | substrate conveyance mechanism 111 is provided. The second substrate transfer mechanism 111 is configured to transfer the wafer W to the carrier C, the load lock chamber 104, and the alignment chamber 107.

As shown in FIG. 15, the 1st film-forming apparatus 102a is a sputtering particle discharge | release part, and only the sputtering particle discharge | release part 12a is provided, except that the sputtering particle discharge | release part 12b is not provided. It is comprised similarly to the film-forming apparatus 1 of embodiment. The second film forming apparatus 102b also has the same configuration.

The board | substrate rotation chamber 103 functions as a board | substrate rotation mechanism which changes the direction of a board | substrate by rotating the board | substrate W in a horizontal plane, and has the structure similar to the alignment chamber 107. As shown in FIG.

The film-forming system 100 has the whole control part 115 which consists of computers. The whole control part 115 is the 1st and 2nd film-forming apparatuses 102a and 102b, the board | substrate rotation chamber 103, the load lock chamber 104, the vacuum conveyance chamber 101, and the 1st and 2nd board | substrate conveyance mechanisms ( 110, 111, and main control unit CPU for controlling drive systems of gate valves G, G1, and G2. The whole control unit 115 also has an input device, an output device, a display device, and a storage device (storage medium). The main control unit of the overall control unit 115 causes the film forming system 100 to perform a predetermined operation based on, for example, the processing recipe stored in the storage medium of the storage device.

In the film-forming system 100 comprised in this way, sputtering film-forming is formed on both sides of the convex part using the 1st and 2nd film-forming apparatuses 102a and 102b.

First, the board | substrate W is taken out from the carrier C by the 2nd conveyance mechanism 111, and after carrying it through the alignment chamber 107, the board | substrate W is carried in into some load lock chamber 104. . Then, the inside of the load lock chamber 104 is evacuated. And the 1st conveyance mechanism 110 carries in the board | substrate W in the load lock chamber 104 into the chamber of the 1st film-forming apparatus 102a.

In the 1st film-forming apparatus 102a, sputtering particle | grains obliquely from the target 30a of the 1st sputtering particle discharge | release part 12a, moving the board | substrate W on the board | substrate support part 14 in one direction of a horizontal direction in a chamber. Releases. As a result, sputtering particles enter the substrate W obliquely from one direction, and the first film 53 is formed on one side of the convex portion 51 of the substrate W as shown in FIG. 6A.

Next, the board | substrate W is carried out from the chamber of the 1st film-forming apparatus 102a by the 1st conveyance mechanism 110, it is conveyed to the board | substrate rotation chamber 103, and the board | substrate W is rotated 180 degrees, for example. .

Subsequently, the substrate W after being rotated is loaded into the chamber of the second film forming apparatus 102b by the first transfer mechanism 110.

Similarly, in the 2nd film-forming apparatus 102b, while moving the board | substrate W on the board | substrate support part 14 to one direction of a horizontal direction in a chamber, it obliquely from the target 30a of the 1st sputtering particle discharge | release part 12a. Release sputtered particles. As a result, the sputtered particles enter the substrate W obliquely from one direction. At this time, since the substrate W is rotated (inverted) by 180 °, as shown in FIG. 6B, the second film 54 is formed on the side of the convex portion 51 opposite to the first film 53. It is formed.

By alternately repeating the film formation by the first film forming apparatus 102a and the film formation by the second film forming apparatus 102b as described above, the film can be grown in a substantially vertical direction as shown in FIG. 6C.

As described above, in the present embodiment, the film forming system includes a plurality of processing apparatuses capable of sputtering at least obliquely with respect to the substrate in the chamber, a transport mechanism for transporting the substrate between the chambers of the plurality of processing apparatuses, and a substrate. It has a substrate rotation mechanism which rotates in surface inside. With this configuration, one side of the convex portion of the trench pattern can be sputtered by one film forming apparatus, and the other side of the convex portion can be sputtered by another film forming apparatus. Thereby, alternating sputtering can be implemented with respect to the convex part of a trench pattern.

The rotation of the substrate W does not necessarily need to be performed by providing the substrate rotation chamber 103 in the vacuum transfer chamber 101, and may be provided with a substrate rotation mechanism in a chamber of any film forming apparatus. The substrate W may be rotated by the alignment chamber 107.

In addition, the rotation angle of the board | substrate W by the board | substrate rotation chamber 103 etc. can be set to arbitrary angles not only 180 degrees. Thereby, since arbitrary parts of the pattern convex part formed on the board | substrate W can be made to oppose the target of a film-forming apparatus, adjustment of a sputtering point can be easily performed and freedom degree of the uniform coating property of a film can be improved. For this reason, compared with the case where two or more targets which adjusted the installation angle were fixedly arranged, adjustment width is wider and it is advantageous also in terms of footprint and cost.

For example, film formation as shown in Figs. 16A and 16B is possible. First, as shown in FIG. 16A, alternately film formation is performed with the convex portion 61 of the trench pattern rotated 180 ° in the vertical direction in the planar view, and the film 62 is formed on the long side. We form. Subsequently, as shown in FIG. 16B, the substrate is rotated by 90 ° in the substrate rotation chamber 103, and then, the substrate W is 180 ° in the parallel direction with respect to the convex portion 61 of the trench pattern. The film formation is carried out while rotating, and the film 63 is formed on the short side. Thereby, it can form into a film in the whole surface of the convex part 61.

In the above example, after the film is formed on one side of the convex portion by the first film forming apparatus 102a, the substrate is rotated in the substrate rotating chamber 103, and on the other side of the convex portion on the second film forming apparatus 102b. Although the case of film-forming is shown, one film-forming apparatus may be sufficient in this embodiment. For example, you may provide only the 1st film-forming apparatus 102a as a film-forming apparatus. In this case, after the film is formed on one side of the convex portion in the first film forming apparatus 102a, the substrate is rotated in the substrate rotating chamber 103, and the film is formed on the other side of the convex portion in the first film forming apparatus 102a. You can do that.

Third Embodiment

Next, 3rd Embodiment is described.

FIG. 17: is a schematic block diagram which shows an example of the film-forming system which concerns on 3rd Embodiment, and FIG. 18 is sectional drawing which shows the 2nd film-forming apparatus.

This film forming system 100a is basically similar to the film forming system 100 used in the second embodiment shown in FIG. 14, but differs from the fact that the substrate rotating chamber 103 does not exist, and the second embodiment. It is different from the deposition system 100 in that it has a different second deposition apparatus 102b '.

As shown in FIG. 18, the 2nd film-forming apparatus 102b 'is a sputtering particle discharge | release part, Comprising: Only the sputtering particle discharge | release part 12b is provided, except that the sputtering particle discharge | release part 12a is not provided. It is comprised similarly to the film-forming apparatus 1 of 1 Embodiment. That is, in the second film forming apparatus 102b ', sputtered particles are released from the sputtered particle discharging portion on the side opposite to the first film forming apparatus 102a.

In this manner, a plurality of film forming apparatuses in which the arrangements in the chambers of the sputtering particle discharging portions are opposite to each other are mixed, and the substrates are transported between them, thereby alternately sputtering with respect to the convex portions of the trench patterns without rotating the substrates. . Thereby, it can contribute to the simplification of a film-forming system structure, low footprint, and cost reduction.

As a suitable example, the following examples are mentioned. In the 1st film-forming apparatus 102a in which the target (sputtering particle discharge | release part) is arrange | positioned on the opposite side to the inlet-outlet (gate valve G) of a board | substrate, the board | substrate W is scanned from the inlet-outlet side to the target side. On the other hand, in the 2nd film-forming apparatus 102b 'in which the target (sputtering particle discharge part) is arrange | positioned at the carry-in / out port (gate valve G) side, a board | substrate is scanned from a target side to a carry-in / out side. By alternately performing these, suitable alternating film formation can be performed with respect to the convex part of a trench pattern, without using a board | substrate rotation chamber. That is, it is preferable that the 1st film-forming apparatus 102a and the 2nd film-forming apparatus 102b 'make the scanning direction of the board | substrate W mutually opposite to an inlet / outlet.

<4th embodiment>

Next, 4th Embodiment is described.

19 is a schematic configuration diagram showing an example of a film forming system used in the fourth embodiment.

Although the film-forming system 100b is basically the same as the film-forming system 100 used for 2nd Embodiment shown in FIG. 14, the processing apparatus which performs processes other than sputtering film-forming instead of the 2nd film-forming apparatus 102b. It is different from the film-forming system 100 that 120 is provided.

As the processing apparatus 120, a heating apparatus, a cooling apparatus, an etching apparatus, etc. are mentioned.

Thus, even if only one 1st film-forming apparatus 102a is formed into a film, it forms into one side of a convex part, and then rotates the board | substrate W in the board | substrate rotation chamber 103, and returns to the 1st film-forming apparatus 102a again. The board | substrate W can be carried in and film-forming on the other side of a convex part. Moreover, by providing the processing apparatus 120, processes other than sputtering film formation, such as a heating, cooling, and etching, can also be performed suitably as needed before, during and after a sputtering process.

In addition, in this embodiment, although the film-forming apparatus and the processing apparatus should just be at least 1, you may provide in multiple numbers. When there are multiple processing apparatuses, you may provide what has a different function, respectively.

<Fifth Embodiment>

Next, 5th Embodiment is described.

The film-forming system which concerns on this embodiment has a some film-forming apparatus, the some vacuum conveyance chamber (conveyance module) provided in series, and the board | substrate rotation chamber (substrate rotation mechanism) provided between the some vacuum conveyance chamber, and a board | substrate Is returned to the serial.

20 is a schematic block diagram showing an example of a film forming system used in the fifth embodiment.

Similar to the film forming system 100 of the second embodiment, the film forming system 100c has an air transport chamber 105 on which three carriers C are mounted, and two air transport chambers 105 are provided in the air transport chamber 105. The load lock chambers 104a and 104b and the alignment chamber 107 are provided. The second conveyance mechanism 111 is provided in the waiting conveyance chamber 105.

The load lock chambers 104a and 104b are connected to the first vacuum transfer chamber 131a via the gate valve G1. In addition, in the 1st vacuum conveyance chamber 131a, the 2nd vacuum conveyance chamber 131b, the 3rd vacuum conveyance chamber 131c, and the 4th vacuum conveyance chamber 131d are the 1st-3rd board | substrate rotation chamber 133a. , 133b and 133c are connected in series. In the 1st-4th vacuum conveyance chambers 131a-131d, the 1st conveyance mechanism 110 is provided similarly to the vacuum conveyance chamber 101 of the film-forming system 100.

Two film-forming apparatuses 132a and 132b are connected to both sides of the 1st vacuum conveyance chamber 131a via the gate valve G. As shown in FIG. Moreover, the 1st board | substrate rotation chamber 133a is connected to the film-forming apparatuses 132a and 132b through the gate valve G3, and is connected to the 2nd vacuum conveyance chamber 131b through the gate valve G4. .

Two film-forming apparatuses 132c and 132d are connected to the 2nd vacuum conveyance chamber 131b through the gate valve G at both sides. Moreover, the 2nd board | substrate rotation chamber 133b is connected to the film-forming apparatuses 132c and 132d through the gate valve G3, and is connected to the 3rd vacuum conveyance chamber 131c through the gate valve G4. .

Two film-forming apparatuses 132e and 132f are connected to the 3rd vacuum conveyance chamber 131c through the gate valve G at both sides. Moreover, the 3rd board | substrate rotation chamber 133c is connected to the film-forming apparatuses 132e and 132f through the gate valve G3, and is connected to the 4th vacuum conveyance chamber 131d through the gate valve G4. .

Two film-forming apparatuses 132g and 132h are connected to the 4th vacuum conveyance chamber 131d via the gate valve G at both sides.

In addition, the film-forming apparatuses 132a-132h all have the same structure, and have the structure similar to the 1st film-forming apparatus 102a of 2nd Embodiment, for example. In addition, the conveyance of the board | substrate W between the film-forming apparatus and the board | substrate rotation chambers 133a-133c may be performed by the 1st conveyance mechanism 110, and a conveyance mechanism is provided in the board | substrate rotation chambers 133a-133c, You may perform with the conveyance mechanism. In addition, the film forming system 100c has the same overall controller 115 as the film forming system 100.

In the film-forming system 100c comprised in this way, first, the board | substrate W is taken out from the carrier C by the 2nd conveyance mechanism 111, and after passing through the alignment chamber 107, the load lock chamber ( The substrate W is loaded into 104a). Next, the inside of the load lock chamber 104a is evacuated. And the board | substrate W in the load lock chamber 104a is carried in into the chamber of the film-forming apparatus 132a by the 1st conveyance mechanism 110 of the 1st vacuum conveyance chamber 131a, and film formation of one side is performed. . Then, the board | substrate W is conveyed to the 1st board | substrate rotation chamber 133a, and the board | substrate W is rotated in surface in the 1st board | substrate rotation chamber 133a. Thereafter, film formation on the opposite side is performed by the film forming apparatus 132c by the first conveyance mechanism 110 of the second vacuum conveyance chamber 131b.

In this manner, as shown by the broken arrow in FIG. 20, the substrates W are transferred in serial to the plurality of film forming apparatuses, and the film forming process is repeated. When film-forming in the film-forming apparatus 132b is complete | finished, the board | substrate W is conveyed to the load lock chamber 104b by the 1st conveyance mechanism 110 of the 1st vacuum conveyance chamber 131a. And after returning the load lock chamber 104b to atmospheric pressure, it returns to the carrier C by the 2nd conveyance mechanism 111. As shown in FIG.

In this manner, film formation is performed by transferring the substrates serially to the plurality of film forming apparatuses while the substrate is rotated in the middle, so that film formation can be performed on both sides of the convex portion.

By forming the film in this manner, each film forming apparatus may perform sputtering film formation on one side of the convex portion of the trench pattern, so that the processing time in each film forming apparatus is shorter than in the case of sputtering film formation on both sides of the convex portion. For this reason, the stay of the board | substrate W at the time of serial conveyance of the board | substrate W can be suppressed.

In addition, you may replace a part of the board | substrate rotation chamber with the processing apparatus which performs a heating apparatus, a cooling apparatus, an etching apparatus, etc .. For example, you may replace the 3rd board | substrate rotation chamber 133c with a heating apparatus, and heat-process between film-forming in one film-forming apparatus and film-forming in the next film-forming apparatus.

<Other applications>

As mentioned above, although embodiment was described, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope of the appended claims and their known features.

For example, the method of releasing sputtering particle of the said embodiment is an illustration, You may release sputtering particle by another method.

In addition, although the example which provided two targets (sputtering particle discharge | release part) was shown in 1st Embodiment, three or more may be sufficient. In the first embodiment, the sputtering particles are emitted from one target while the substrate is moved in one direction during the alternate film formation, but the sputtering particles are alternately released from the two targets while the substrate is moved in one direction. You may also In addition, in the said 1st Embodiment, although the articulated arm mechanism was used as a board | substrate movement mechanism, it is not limited to this, What is necessary is just to be able to linearly move a board | substrate, such as a belt conveyor. When a belt conveyor is used, the belt conveyor also serves as a substrate support and a substrate moving mechanism.

In addition, the film-forming systems of the second to fifth embodiments are only examples. For example, in 2nd Embodiment, what is necessary is just at least one film-forming apparatus, and in 3rd Embodiment, any one or both of 1st film-forming apparatus 102a and 2nd film-forming apparatus 102b 'is two or more. You may be. In the fourth embodiment, any one or both of the film forming apparatuses may be two or more. In addition, in the said 2nd-5th embodiment, although the case where one sputtering particle discharge | release part for performing inclination film-forming as a film-forming apparatus was shown, multiple sputtering particle discharge parts may be sufficient.

Claims (36)

A processing chamber defining a processing space in which a film forming process is performed on the substrate;
First and second sputtering particle ejecting portions each having a target for emitting sputtering particles in different oblique directions in the processing space;
A sputtering particle shielding plate having a passage hole through which the sputtering particles emitted from the first sputtering particle discharging portion and the second sputtering particle discharging portion pass;
A substrate support portion for supporting a substrate provided on the opposite side to the first sputtered particle discharging portion and the second sputtering particle discharging portion with the sputtering particle shielding plate of the processing space therebetween;
A substrate moving mechanism for linearly moving a substrate supported on the substrate support;
Control unit for controlling the first sputtering particle discharge unit, the second sputtering particle discharge unit and the substrate moving mechanism
Including,
The control unit controls release of the sputtered particles from the first sputtered particle discharge unit and the second sputtered particle discharge unit, while controlling the substrate movement mechanism to move the substrate linearly.
The film-forming apparatus of the said sputtering particle discharge | release part and the said 2nd sputtering particle discharge | release part is deposited on the said board | substrate through the said through hole. The method of claim 1,
A gas introduction unit for introducing a sputtering gas into the processing chamber,
The first sputtering particle discharging unit and the second sputtering particle discharging unit each include a target holder holding the target, and a power supply for applying a voltage to the target holder, wherein voltage is applied to the target holder from the power supply. Thereby, the film-forming apparatus by which the sputtering gas dissociates and the ion formed collides with the target, and sputtering particle | grains are discharged | released. The method according to claim 1 or 2,
The sputtering particle shielding plate may include a first passage hole for passing the sputtered particles emitted from the first sputtering particle discharge unit, a second passage hole for passing the sputtered particles discharged from the second sputtering particle discharge unit, and the A film forming apparatus, comprising: a first pin that guides sputtered particles at a predetermined angle provided around a first through hole, and a second pin that guides sputtered particles at a predetermined angle provided around the second through hole. The method according to any one of claims 1 to 3,
The control unit includes a first film forming a first film on a substrate by releasing sputtered particles from the first sputtering particle ejecting unit, and a second film on a substrate by releasing sputtering particles from the second sputtering particle ejecting unit. A film forming apparatus, which controls the second film forming to be performed alternately one or more times. The method of claim 4, wherein
The control unit, while discharging sputtered particles from the first sputtered particle discharging unit, while moving the substrate in a first direction by the substrate moving mechanism, and discharging sputtered particles from the second sputtering particle discharging unit, The film-forming apparatus which moves the said board | substrate to the 2nd direction opposite to a said 1st direction by the said board | substrate movement mechanism. The method according to claim 4 or 5,
The film forming apparatus, wherein the control unit makes a discharge output of sputtered particles different in the first sputtered particle discharging unit and the second sputtering particle discharging unit. The method according to any one of claims 4 to 6,
A film forming apparatus, wherein the angle of sputtered particles emitted from said first sputtered particle ejecting portion and incident on said substrate is different from the angle of sputtered particles emitted from said second sputtering particle ejecting portion and incident on said substrate. The method according to any one of claims 4 to 7,
The target of the first sputtering particle discharging portion and the target of the second sputtering particle discharging portion are formed of different materials, and the first film and the second film formed on the substrate are formed of different materials. , Deposition device. The method according to any one of claims 1 to 3,
And the control unit controls to form a film by simultaneously emitting sputtered particles from the first sputtered particle discharging unit and the second sputtering particle discharging unit. The method of claim 9,
Control of film formation by adjusting the arrangement and angle of the target of the first sputtered particle emitter and the angle of the sputtered particles emitted from the first sputtered particle emitter and the second sputtered particle emitter and incident on the substrate The film forming apparatus is performed. It is a film-forming method which forms a predetermined film | membrane by the film-forming apparatus,
The film forming apparatus,
A processing chamber defining a processing space in which a film forming process is performed on the substrate;
First and second sputtering particle ejecting portions each having a target for emitting sputtering particles in different oblique directions in the processing space;
A sputtering particle shielding plate having a passage hole through which the sputtering particles emitted from the first sputtering particle discharging portion and the second sputtering particle discharging portion pass;
A substrate support portion for supporting a substrate provided on the opposite side to the first sputtered particle discharging portion and the second sputtering particle discharging portion with the sputtering particle shielding plate of the processing space therebetween;
A substrate moving mechanism for linearly moving a substrate supported on the substrate support
Including,
Supporting a substrate with the substrate support;
Moving the substrate linearly;
Discharging sputtered particles from the first sputtered particle discharging portion and the second sputtering particle discharging portion while the substrate is moved;
A step of forming a film by injecting sputtered particles emitted from said first sputtered particle discharging portion and said second sputtering particle discharging portion into said substrate through said through hole.
Including, deposition method. The method of claim 11,
The step of releasing the sputtered particles alternately releases sputtered particles from the first sputtered particle discharging portion and release of sputtered particles from the second sputtered particle discharging portion one or more times,
The film forming process includes a first film forming a first film on a substrate by sputtering particles emitted from the first sputtering particle ejecting portion, and a sputtering particle emitted from the second sputtering particle ejecting portion on the substrate. The film-forming method which performs one or more times of 2nd film-forming which forms a 2nd film | membrane. The method of claim 12,
While the substrate moving mechanism moves the substrate in the first direction and releases the sputtered particles from the second sputtered particle emitting portion, while the sputtering particles are released from the first sputtered particle emitting portion, And the substrate is moved in a second direction opposite to the first direction. The method according to any one of claims 11 to 13,
The film deposition method of controlling the growth direction of the first film and the second film deposited on the substrate to different the output of the sputtered particles in the first sputtered particle discharge portion and the second sputtered particle discharge portion. The method according to any one of claims 11 to 14,
The angle of the sputtered particles emitted from the first sputtered particle emitting part and incident on the substrate is different from the angle of the sputtered particles emitted from the second sputtering particle emitting part and incident on the substrate, so that The deposition method of controlling the growth direction of the first film and the second film to be deposited. The method according to any one of claims 11 to 15,
Forming the target of the first sputtering particle emitting part and the target of the second sputtering particle emitting part with different materials, and forming the first film and the second film formed on the substrate with different materials, The deposition method. The method of claim 11,
The step of releasing the sputtered particles simultaneously releases the sputtered particles from the first sputtered particle discharging portion and the release of the sputtered particles from the second sputtered particle discharging portion,
The film forming method is a film forming method wherein a film is formed on a substrate by sputtered particles simultaneously released from the first sputtering particle ejecting portion and the second sputtering particle emitting portion. The method of claim 17,
The film forming step includes the arrangement and the angle of the target of the first sputtering particle discharging unit and the angle of the sputtered particles emitted from the first sputtering particle discharging unit and the second sputtering particle discharging unit and incident on the substrate. Film deposition method controlled by adjustment. At least one film forming apparatus having a sputtering particle discharging portion for discharging sputtering particles at an angle, and sputtering film formation on the substrate by releasing sputtering particles from the sputtering particle discharging portion while linearly moving the substrate in one direction;
A substrate transfer module for transferring a substrate to the at least one film forming apparatus;
Substrate rotating mechanism for rotating the substrate in plane
Having a film forming system. The method of claim 19,
Having at least two said film-forming apparatuses, after performing film-forming in one of the said at least two film-forming apparatuses, a board | substrate is rotated in-plane with the said board | substrate rotation mechanism, and the said board | substrate conveyance module moves to another of the at least two film-forming apparatuses. The film-forming system which conveys and forms a film. The method of claim 19,
It has a plurality of the film-forming apparatuses, and is comprised so that a board | substrate may be conveyed serially with respect to the said several film-forming apparatuses by the said board | substrate conveyance module, The direction of film-forming by the said several film-forming apparatuses alternately switches in the said board | substrate rotation mechanism. And the substrate is configured to rotate the substrate. The method according to any one of claims 19 to 21,
A film forming system, further comprising a processing device that performs a process other than film formation. The method according to any one of claims 19 to 22,
The substrate rotating mechanism is connected to the substrate transfer module. The method according to any one of claims 19 to 22,
The substrate rotating mechanism is provided in the at least one film forming apparatus. The method according to any one of claims 19 to 24,
And the substrate rotating mechanism rotates the substrate such that the rotation angle of the substrate is 180 degrees. The method according to any one of claims 19 to 24,
And the substrate rotating mechanism rotates the substrate such that the rotation angle of the substrate becomes an arbitrary angle. A first sputtering particle discharging unit for discharging sputtering particles in a first oblique direction, wherein sputtering particles are discharged from the first sputtering particle discharging unit while linearly moving the substrate in a third direction to perform sputtering film formation on the substrate 1 film forming device,
And a second sputtering particle discharge portion for discharging sputtered particles in a second direction opposite to the first direction, and sputtering particles are discharged from the second sputtered particle discharge portion while linearly moving the substrate in the fourth direction. A second film forming apparatus for sputtering film forming with respect to the film;
And a conveying module for conveying a substrate between the first film forming apparatus and the second film forming apparatus. The method of claim 27,
The film forming system, wherein the third direction of the first film forming apparatus and the fourth direction of the second film forming apparatus are opposite directions with respect to a carry-in and out port for carrying in and carrying out a substrate by the transfer module. A film forming method for forming a predetermined film by a film forming system,
The film forming system,
At least one film forming apparatus including a sputtering particle emitting portion for discharging the sputtering particles at an angle, wherein the sputtering particles are discharged from the sputtering particle discharging portion while linearly moving the substrate in one direction to perform sputtering deposition on the substrate;
A substrate transfer module for transferring a substrate to the at least one film forming apparatus;
Substrate rotating mechanism for rotating the substrate in plane
Has,
Performing a first film formation on one of the at least one film forming apparatuses with respect to the substrate;
Carrying out the substrate from the chamber of the film forming apparatus by the substrate transfer module;
Rotating the substrate in-plane by the substrate rotating mechanism;
Conveying the substrate rotated in-plane by the substrate conveying module to the film forming apparatus or another film forming apparatus;
Process of performing 2nd film-forming by the said film-forming apparatus with which the said board | substrate was conveyed
Having a film forming method. The method of claim 29,
The at least one film forming apparatus includes at least two of the film forming apparatuses, and the step of performing the first film forming is performed by one of the film forming apparatuses, and the step of performing the second film forming is performed on the other of the film forming apparatuses. The film formation method performed by the. The method of claim 29,
The at least one film forming apparatus includes a plurality of the film forming apparatuses, and the substrate conveying module is configured such that a substrate is conveyed in serial to the plurality of film forming apparatuses, and the substrate rotating mechanism includes the plurality of film forming apparatuses. And rotating the substrate so that the direction of film formation by the switch is alternately changed. The method of any one of claims 29-31,
The film forming system further includes a processing device that performs processing other than film forming,
The film-forming method further includes the process of performing processes other than film-forming by the said processing apparatus before, during, or after at least 1 of the said 1st film-forming process and the said 2nd film-forming process. 33. The method according to any one of claims 29 to 32,
The film-forming method of rotating the said board | substrate in-plane rotates the said board | substrate so that the rotation angle of a board | substrate may become 180 degrees with the said board | substrate rotation mechanism. 33. The method according to any one of claims 29 to 32,
The film-forming method of rotating the said board | substrate in-plane rotates the said board | substrate so that the rotation angle of a board | substrate may become arbitrary angle by the said board | substrate rotation mechanism. A film forming method for forming a predetermined film by a film forming system,
The film forming system,
A first sputtering particle discharging portion for discharging sputtering particles in a first oblique direction, wherein sputtering particles are discharged from the first sputtering particle discharging portion while linearly moving the substrate in a third direction to perform sputtering film formation on the substrate. 1 film forming device,
And a second sputtering particle discharge portion for discharging sputtered particles in a second direction opposite to the first direction, and sputtering particles are discharged from the second sputtered particle discharge portion while linearly moving the substrate in the fourth direction. A second film forming apparatus for sputtering film forming with respect to the film;
Transfer module which conveys a board | substrate between the said 1st film deposition apparatus and the said 2nd film deposition apparatus.
Including,
By the first film forming apparatus, sputtering particles are released from the first sputtered particle release while linearly moving the substrate in a third direction to perform first sputtering film formation on the substrate;
Conveying a substrate to the second film forming apparatus by the conveying module;
By the second film forming apparatus, sputtering particles are released from the second sputtering particle discharging portion while linearly moving the substrate in a fourth direction to perform second sputtering film formation on the substrate.
Including, deposition method. 36. The method of claim 35 wherein
The said 3rd direction of the said 1st film-forming apparatus, and the said 4th direction of the said 2nd film-forming apparatus are mutually opposite directions with respect to the carrying in / out port which carries in and takes out a board | substrate with the said conveyance module.

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