CN114318254A - Film forming system and film forming method - Google Patents

Film forming system and film forming method Download PDF

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Publication number
CN114318254A
CN114318254A CN202111499892.0A CN202111499892A CN114318254A CN 114318254 A CN114318254 A CN 114318254A CN 202111499892 A CN202111499892 A CN 202111499892A CN 114318254 A CN114318254 A CN 114318254A
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substrate
sputtering
film forming
film
film formation
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品田正人
户岛宏至
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from CN201910733755.5A external-priority patent/CN110819949A/en
Publication of CN114318254A publication Critical patent/CN114318254A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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Abstract

The invention provides a film forming system and a film forming method, which can perform sputtering film forming with high degree of freedom based on inclined film forming. A film forming apparatus of a film forming system includes: a processing chamber; a 1 st sputtering particle discharging unit and a 2 nd sputtering particle discharging unit each having a target for discharging sputtering particles in different oblique directions in a processing space of a processing chamber; a sputtering particle shielding plate having a through hole through which the sputtering particle passes; a substrate support portion that supports a substrate; a substrate moving mechanism for linearly moving the substrate; and a control section. The control section controls the substrate to move linearly and controls the release of the sputtering particles from the 1 st sputtering particle release section and the 2 nd sputtering particle release section, and the sputtering particles released from the 1 st sputtering particle release section and the 2 nd sputtering particle release section pass through the through hole and are deposited on the substrate.

Description

Film forming system and film forming method
The present application is a divisional application of an application having an application date of 2019, 8/9, an application number of 201910733755.5, and an invention name of "film forming apparatus, film forming system, and film forming method".
Technical Field
The present disclosure relates to a film formation system and a film formation method.
Background
In the manufacture of electronic devices such as semiconductor devices, a film formation process is performed to form a film on a substrate. As a film deposition apparatus used for a film deposition process, a sputtering apparatus is known.
Patent document 1 proposes, as a technique for forming a film having high directivity in which the incidence directions of sputtered particles are aligned with each other with respect to a pattern on a substrate, the following technique: the sputtering particles are made to enter obliquely with respect to the substrate.
The film forming apparatus described in patent document 1 includes: a vacuum chamber, a substrate holding table, which is provided in the vacuum chamber; a target holder that holds a target; and a shield assembly provided between the target holder and the substrate holding table and having an opening (through hole). Then, while the substrate holding table is moved by the moving mechanism, the sputtering particles released from the target are made to pass through the opening of the shield member, and the sputtering particles are made to be incident on the substrate at a predetermined angle.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2015-67856
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a film deposition apparatus, a film deposition system, and a film deposition method capable of performing sputtering film deposition with a high degree of freedom based on oblique film deposition.
Means for solving the problems
A film forming apparatus according to an aspect of the present disclosure includes: a process chamber defining a process space for performing a film formation process on a substrate; a 1 st sputtering particle discharging unit and a 2 nd sputtering particle discharging unit each having a target for discharging sputtering particles in different oblique directions in the processing space; a sputtering particle shielding plate having through holes through which the sputtering particles released from the 1 st and 2 nd sputtering particle release parts pass; a substrate support portion provided on the opposite side of the 1 st sputtering particle emitting portion and the 2 nd sputtering particle emitting portion with the sputtering particle shielding plate of the processing space interposed therebetween, the substrate support portion supporting a substrate; a substrate moving mechanism that linearly moves the substrate supported by the substrate support unit; and a control unit that controls the 1 st sputtering particle release unit, the 2 nd sputtering particle release unit, and the substrate moving mechanism, wherein the control unit controls the release of the sputtering particles from the 1 st sputtering particle release unit and the 2 nd sputtering particle release unit while controlling the substrate to move linearly by the substrate moving mechanism, and the sputtering particles released from the 1 st sputtering particle release unit and the 2 nd sputtering particle release unit pass through the through hole and are deposited on the substrate.
Another aspect of the present disclosure provides a film formation system including: a 1 st film forming apparatus which has a 1 st sputtering particle discharging unit for discharging sputtering particles in a 1 st inclined direction, and discharges the sputtering particles from the 1 st sputtering particle discharging unit to perform sputtering film formation on a substrate while linearly moving the substrate in a 3 rd direction; a 2 nd film forming apparatus which has a 2 nd sputtering particle discharging unit for discharging the sputtering particles in a 2 nd direction opposite to the 1 st direction, and discharges the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction to perform a sputtering film formation on the substrate; and a transport module that transports the substrate between the 1 st film forming apparatus and the 2 nd film forming apparatus.
A film formation method according to another aspect of the present disclosure is a film formation method for forming a predetermined film by using a film formation system, the film formation system including: a 1 st film forming apparatus which has a 1 st sputtering particle discharging unit for discharging sputtering particles in a 1 st inclined direction, and discharges the sputtering particles from the 1 st sputtering particle discharging unit to perform sputtering film formation on a substrate while linearly moving the substrate in a 3 rd direction; a 2 nd film forming apparatus which has a 2 nd sputtering particle discharging unit for discharging the sputtering particles in a 2 nd direction opposite to the 1 st direction, and discharges the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction to perform a sputtering film formation on the substrate; and a transport module that transports the substrate between the 1 st film forming apparatus and the 2 nd film forming apparatus, the film forming method including: a step of performing a 1 st sputter film formation on the substrate by discharging sputter particles from the 1 st sputter particle discharging unit while linearly moving the substrate in a 3 rd direction by the 1 st film forming apparatus; a step of transporting the substrate to the 2 nd film forming apparatus by the transport module; and a step of performing a 2 nd sputtering film formation on the substrate by discharging the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction by the 2 nd film forming apparatus.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, sputtering film formation with a high degree of freedom can be performed based on oblique film formation.
Drawings
Fig. 1 is a vertical sectional view showing a film deposition apparatus according to an embodiment.
Fig. 2 is a horizontal sectional view based on the line II-II of fig. 1.
Fig. 3 is a cross-sectional view showing another example of the sputtering particle shielding plate.
Fig. 4A is a schematic diagram for explaining an embodiment of example 1 of a film formation method using a film formation apparatus according to an embodiment.
Fig. 4B is a schematic diagram for explaining an embodiment of example 1 of a film formation method using the film formation apparatus according to the embodiment.
Fig. 4C is a schematic diagram for explaining an embodiment of example 1 of a film formation method using the film formation apparatus according to the embodiment.
Fig. 4D is a schematic diagram for explaining an implementation state of example 1 of a film formation method using a film formation apparatus according to an embodiment.
Fig. 5 is a cross-sectional view showing a substrate having a groove pattern that can be applied to a film formation method.
Fig. 6A is a cross-sectional view showing a state in which the 1 st film formation is performed on the substrate having the groove pattern of fig. 5 in the 1 st example of the film formation method.
Fig. 6B is a cross-sectional view showing a state in which the 2 nd film formation is performed on the substrate in the state of fig. 6A after the 1 st film formation.
Fig. 6C is a cross-sectional view showing a state where the 1 st film formation and the 2 nd film formation are repeated to grow a film in a vertical direction in the 1 st example of the film formation method.
Fig. 7 is a cross-sectional view showing a state of film growth when the 1 st film formation and the 2 nd film formation are repeated in the 1 st example of the film formation method, and the output at the 1 st film formation is larger than the output at the 2 nd film formation.
Fig. 8 is a sectional view showing a shield plate having two through holes and two fins (japanese: フィン) arranged around the two through holes and having different angles from each other.
Fig. 9 is a cross-sectional view showing a state in which the film formation is performed by repeating the 1 st film formation and the 2 nd film formation using the shielding plate of fig. 8.
Fig. 10A is a cross-sectional view schematically showing a case where two targets are formed of materials having different etching selectivity and a stacked structure similar to that of fig. 6C is formed of different materials.
Fig. 10B is a cross-sectional view showing a state where etching is performed from the structure of fig. 10A, and a film of one material which is difficult to be etched and a part of a convex portion are etched using the film of the other material as a mask.
Fig. 11 is a schematic diagram for explaining an embodiment of example 2 of a film formation method using a film formation apparatus according to an embodiment.
Fig. 12 is a cross-sectional view showing a state where a film is formed on a substrate having the groove pattern of fig. 5 by example 2 of the film forming method.
Fig. 13A is a diagram showing an example of arrangement of two targets.
Fig. 13B is a diagram showing another example of the arrangement of two targets.
Fig. 14 is a schematic configuration diagram showing an example of the film formation system according to embodiment 2.
Fig. 15 is a sectional view showing the 1 st film forming apparatus of the film forming system of fig. 14.
Fig. 16A is a diagram showing an example of film formation performed by changing the rotation angle of the substrate in embodiment 2.
Fig. 16B is a diagram showing an example of film formation performed by changing the rotation angle of the substrate in embodiment 2.
Fig. 17 is a schematic configuration diagram showing an example of the film formation system according to embodiment 3.
Fig. 18 is a sectional view showing a 2 nd film forming apparatus of the film forming system of fig. 17.
Fig. 19 is a schematic configuration diagram showing an example of the film formation system according to embodiment 4.
Fig. 20 is a schematic configuration diagram showing an example of the film formation system according to embodiment 5.
Detailed Description
The embodiments are described below in detail with reference to the drawings.
< embodiment 1 >
First, embodiment 1 will be explained.
[ film Forming apparatus ]
Fig. 1 is a vertical sectional view showing a film deposition apparatus used in embodiment 1, and fig. 2 is a horizontal sectional view taken along line II-II of fig. 1.
The film deposition apparatus 1 is used to form a film on a substrate W by sputtering. The film deposition apparatus 1 includes a process chamber 10, a 1 st sputtering particle emitting portion 12a and a 2 nd sputtering particle emitting portion 12b, a substrate support portion 14, a substrate moving mechanism 16, a sputtering particle shielding plate 18, and an exhaust device 20. Examples of the substrate W include a semiconductor wafer, but are not limited thereto.
The processing chamber 10 has: a chamber body 10a having an upper opening; and a lid 10b provided to close the upper opening of the chamber body 10 a. The side surface of the lid 10b is an inclined surface. The inside of the processing chamber 10 is a processing space S in which a film formation process is performed.
An exhaust port 21 is formed in the bottom of the processing chamber 10, and the exhaust device 20 is connected to the exhaust port 21. The exhaust device 20 includes a pressure control valve and a vacuum pump, and the processing space S is vacuum-exhausted to a predetermined degree of vacuum by the exhaust device 20.
A gas inlet 22 for introducing a gas into the processing space S is inserted into the ceiling of the processing chamber 10. A sputtering gas, for example, an inert gas, is introduced from a gas supply unit (not shown) into the processing space S through the gas introduction port 22.
An input/output port 23 for inputting/outputting the substrate W is formed in a sidewall of the processing chamber 10. The input/output port 23 is opened/closed by a gate valve 24. The process chamber 10 is disposed adjacent to the transfer chamber 50, and the process chamber 10 and the transfer chamber 50 are communicated with each other by opening the gate valve 24. The transfer chamber 50 is maintained at a predetermined vacuum level, and a transfer device (not shown) for transferring the substrate W into and out of the processing chamber 10 is provided therein.
The sputtering particle shielding plate 18 is a substantially plate-shaped member and is horizontally disposed at an intermediate position in the height direction of the processing space S. The edge of the sputtering particle shielding plate 18 is fixed to the side wall of the chamber body 10 a. The sputtering particle shielding plate 18 divides the processing space S into a 1 st space S1 and a 2 nd space S2. The 1 st space S1 is a space above the sputtering particle shielding plate 18, and the 2 nd space S2 is a space below the sputtering particle shielding plate 18.
The sputtering particle shielding plate 18 is formed with a slit-shaped through hole 19 through which the sputtering particles pass. The through hole 19 penetrates in the thickness direction (Z direction) of the sputtering particle shielding plate 18. The through hole 19 is formed to be elongated in the longitudinal direction of the Y direction, which is one horizontal direction in the drawing. The length of the through hole 19 in the Y direction is formed longer than the diameter of the substrate W.
The 1 st sputtered particle emitting portion 12a includes: a target holder 26 a; a target 30a held by the target holder 26 a; and a power supply 28a that applies a voltage to the target holder 26 a. The 2 nd sputtering particle emitting portion 12b includes: a target holder 26 b; a target 30b held to the target holder 26 b; and a power supply 28b that applies a voltage to the target holder 26 b.
The target holder 26a and the target holder 26b are made of a conductive material, are disposed above the sputtering particle shielding plate 18, and are attached to different positions on the inclined surface of the lid 10b of the process chamber 10 via insulating members. In this example, the target holder 26a and the target holder 26b are provided at positions facing each other with the through hole 19 interposed therebetween, but the present invention is not limited thereto, and may be provided at any position. The target holders 26a and 26b hold the targets 30a and 30b in such a manner that the targets 30a and 30b are located obliquely upward with respect to the through-hole 19. The targets 30a and 30b are made of a material containing a constituent element of a film to be formed, and may be a conductive material or a dielectric material.
The power supply 28a and the power supply 28b are electrically connected to the target holder 26a and the target holder 26b, respectively. The power supply 28a and the power supply 28b may be dc power supplies when the targets 30a and 30b are conductive materials, or may be high-frequency power supplies when the targets 30a and 30b are insulating materials. When the power source 28a and the power source 28b are high-frequency power sources, they are connected to the target holders 26a and 26b via adapters. By applying a voltage to the target holder 26a and the target holder 26b, the sputtering gas is dissociated around the targets 30a and 30 b. The ions in the dissociated sputtering gas collide with the targets 30a and 30b, and sputtering particles, which are particles of the constituent materials of the targets 30a and 30b, are released from the targets 30a and 30 b.
As described above, in the 1 st sputtering particle discharging part 12a and the 2 nd sputtering particle discharging part 12b, since the target holder 26a and the target holder 26b are provided at different positions (in this example, positions facing each other), the sputtering particles are discharged from the target 30a and the target 30b held thereto in different oblique directions (in this example, in opposite directions) from each other. Among the released sputtering particles, the sputtering particles passing through the through hole 19 are obliquely incident on the substrate W and deposited on the substrate W.
The arrangement positions and orientations of the targets 30a and 30b by the target holders 26a and 26b are arbitrary, and are set according to the pattern formed on the substrate W.
In this example, the sputtering particles released from the targets 30a and 30b are configured to pass through the through holes 19, but as shown in fig. 3, the sputtering particles may pass through different through holes. That is, the sputtering particle shielding plate 18 is provided with two through holes 19a and 19b, and a fin 35a and a fin 35b having a collimator function are provided around the through holes 19a and 19b, and the sputtering particles released from the targets 30a and 30b can pass through the through holes 19a and 19b, respectively.
The substrate support portion 14 is provided in the chamber body 10a of the processing chamber 10, and horizontally supports the substrate W via support pins 31. The substrate support portion 14 is linearly movable in the X direction, which is one of the horizontal directions, by the substrate moving mechanism 16. Therefore, the substrate W supported by the substrate support portion 14 is linearly moved in the horizontal plane by the substrate moving mechanism 16. The substrate moving mechanism 16 includes the articulated arm portion 32 and the driving portion 33, and moves the substrate support portion 14 in the X direction by driving the articulated arm portion 32 by the driving portion 33.
The film forming apparatus 1 further includes a control unit 40. The control unit 40 is a computer, and controls the components of the film formation apparatus 1, for example, the power supplies 28a and 28b, the exhaust unit 20, and the drive unit 33. The control unit 40 includes a main control unit including a CPU that actually performs these controls, an input device, an output device, a display device, and a storage device. The storage device stores parameters of various processes to be executed by the film formation apparatus 1, and is equipped with a storage medium storing a program for controlling the processes to be executed by the film formation apparatus 1, that is, a process recipe. The main control unit of the control unit 40 calls a predetermined process procedure stored in the storage medium, and causes the film formation apparatus 1 to execute a predetermined process based on the process procedure.
[ film Forming method ]
Next, a film forming method in the film forming apparatus according to embodiment 1 configured as described above will be described.
First, after the processing space S in the processing chamber 10 is exhausted, a sputtering gas, for example, an inert gas is introduced from the gas inlet 22 into the processing space S to be adjusted to a predetermined pressure.
Next, the substrate support portion 14 is positioned at the substrate delivery position, the gate valve 24 is opened, and the substrate W is placed on the substrate support portion 14 (on the support pins 31) by a transfer device (not shown) of the transfer chamber 50. Next, the transfer device is returned to the transfer chamber 50, and the gate valve 24 is closed.
Next, while the substrate W on the substrate support portion 14 is moved in the X direction, which is one of the horizontal directions, the sputtering particles are obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a and the target 30b of the 2 nd sputtering particle discharging portion 12 b.
The discharge of the sputtering particles at this time is performed by collision of ions in the sputtering gas dissociated to the surroundings of the targets 30a and 30b with the targets 30a and 30b by applying a voltage from the power supplies 28a and 28b to the target holder 26a and the target holder 26 b.
The sputtering particles obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a and the target 30b of the 2 nd sputtering particle discharging portion 12b pass through the through hole 19 formed in the sputtering particle shielding plate 18, are obliquely incident on the substrate W, and are deposited on the substrate W.
As in the prior art, when a film is formed by obliquely discharging sputtered particles from a target of one sputtered particle discharging unit while scanning a substrate, the film can be formed with high directivity, but the film forming modes that can be handled are limited.
In contrast, in the present embodiment, the sputtering particles are obliquely discharged from the targets 30a and 30b attached to the two sputtering particle discharging portions 12a and 12b while the substrate W is scanned. Thus, sputtering particles are simultaneously or alternately emitted from the two targets, and film formation can be performed in various film formation modes by adjusting parameters such as the orientation of the targets, the number of through holes, and the angle of the fin-shaped member. Therefore, sputtering film formation with an extremely high degree of freedom can be achieved.
The following is a detailed description.
(1) Example 1 of the film forming method according to embodiment 1,
in example 1, the film is formed by using the film forming apparatus 1 and alternately using the 1 st sputtering particle emitting portion 12a and the 2 nd sputtering particle emitting portion 12 b.
Fig. 4A to 4D are schematic diagrams for explaining an implementation state of the method of this example.
First, as shown in fig. 4A, the substrate W is delivered to the substrate support portion 14 located at the retracted position. Next, as shown in fig. 4B, only the sputtering particles P are obliquely discharged from the target 30B of the 2 nd sputtering particle discharging portion 12B while moving the substrate W on the substrate supporting portion 14 in the a direction in the figure along the X direction. As a result, the sputtered particles P are incident obliquely from one direction on the substrate W and are deposited on the substrate (1 st film formation).
As shown in fig. 4C, after the entire substrate W passes through the through-hole 19 of the sputtering particle shielding plate 18, the sputtering particles from the target 30b by the 2 nd sputtering particle release part 12 stop.
Next, as shown in fig. 4D, only the sputtering particles P are obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a while moving the substrate W on the substrate supporting portion 14 in the direction B opposite to the direction a. As a result, the sputtered particles are obliquely incident on the substrate W from a direction opposite to the previous direction, and are deposited on the substrate (2 nd film formation).
The 1 st film formation and the 2 nd film formation are alternately repeated 1 or more times.
Such a film formation method is suitable for the following cases: a film is selectively formed substantially vertically on the convex portions 51 on a substrate W having a groove pattern in which the convex portions 51 and the concave portions (grooves) 52 are alternately formed as shown in fig. 5.
When the 1 st film formation using the 2 nd sputtered particle emitting portion 12b is performed on the substrate having the pattern of fig. 5, as shown in fig. 6A, the 1 st film 53 overhanging to the right side of the convex portion 51 is formed. However, even if the sputtered particles from the 2 nd sputtered particle emitting portion 12b continue to be emitted and deposited as they are, the overhang becomes severe, and film growth in the vertical direction becomes difficult.
On the other hand, by performing the 1 st film formation and then performing the 2 nd film formation using the 1 st sputtered particle emitting portion 12a, as shown in fig. 6B, the 2 nd film 54 overhanging to the left side of the convex portion 51 is formed, and a base of film growth in the vertical direction is formed. This enables further film formation in the vertical direction.
By repeating the 1 st film formation and the 2 nd film formation alternately while skillfully utilizing the overhang as described above, the film can be grown in a substantially vertical direction as shown in fig. 6C. In the case where the film is crystalline, the crystal can be grown in a substantially vertical direction.
At this time, the direction of film growth (crystal growth) can be changed by changing the output of the 2 nd sputtering particle release part 12b at the 1 st film formation and the output of the 1 st sputtering particle release part 12a at the 2 nd film formation. For example, by setting the 2 nd sputtering particle emitting portion 12b to a higher output than the 1 st sputtering particle emitting portion 12a, the 1 st film 53 grows more than the 2 nd film 54 as shown in fig. 7, and the film can be grown slightly obliquely from the convex portion 51 to the right side in the drawing (crystal growth). Even if the moving speed (scanning speed) of the substrate W is different between the film formation of the 1 st film 53 and the film formation of the 2 nd film 54, the same effect can be obtained.
As shown in fig. 8, the alternate deposition as described above may be performed using a sputtering particle shielding plate 18, the sputtering particle shielding plate 18 having two through holes 19a and 19b and fins 35a and 35b around them, and the angles of the fins 35a and 35b being different. In this case, the sputtering particles discharged from the target 30b of the 2 nd sputtering particle discharging portion 12b pass through the through hole 19b, and the sputtering particles discharged from the 1 st sputtering particle discharging portion 12a pass through the through hole 19 a. This makes it possible to make the angle of the sputtered particles released from the 1 st sputtered particle releasing portion 12a and incident on the substrate W different from the angle of the sputtered particles released from the 2 nd sputtered particle releasing portion 12b and incident on the substrate W. Fig. 8 shows an example in which the angle of the fin 35b is set to a higher angle than the angle of the fin 35 a. This enables control of the crystal growth direction in the 1 st film formation and the 2 nd film formation.
Specifically, as shown in fig. 9, in the 1 st film formation, the sputtered particles are irradiated to the substrate W in the high angle direction and the 1 st film 53 is grown in the high angle direction, and in the 2 nd film formation, the sputtered particles are irradiated to the substrate W in the low angle direction and the 2 nd film 54 is grown in the low angle direction. The same effect is obtained by making the angles of the targets 30a and 30b different.
In the case of alternate film formation as in this example, the target 30a and the target 30b are formed of different materials, and when the 1 st film formation and the 2 nd film formation are repeated, the 1 st film 53 and the 2 nd film 54 may be formed of different materials. For example, by making the etching selectivity different between the 1 st film 53 and the 2 nd film 54, selective etching can be performed. Specifically, in the same laminated structure of the 1 st film 53 and the 2 nd film 54 as in fig. 6C, the 2 nd film 54 may be a material which is more easily etched than the 1 st film 53 under a predetermined etching condition. As schematically shown in fig. 10A, when the same laminated structure as that of fig. 6C is etched under the predetermined etching conditions, the 2 nd film 54 is selectively etched as shown in fig. 10B. Therefore, the 1 st film 53 which is difficult to be etched serves as a mask, and the portion of the projection 51 which is the base of the 2 nd film 54 is etched. When the 1 st film 53 is formed of a wiring material, a wiring having a width smaller than the width of the convex portion 51 can be formed relatively easily.
(2) Example 2 of the film formation method according to embodiment 1
In example 2, the film is formed by using the film forming apparatus 1 and the 1 st sputtering particle emitting portion 12a and the 2 nd sputtering particle emitting portion 12b at the same time.
Specifically, as shown in fig. 11, while the substrate W on the substrate support portion 14 is moved in the a direction or the B direction, which is a direction parallel to the X direction, the sputtering particles are obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a and the target 30B of the 2 nd sputtering particle discharging portion 12B. Thereby, the sputtered particles are obliquely incident on the substrate W from both directions and are deposited on the substrate W. The film formation may be completed while the substrate W is scanned 1 time in the a direction or the B direction, but the film formation may be performed by discharging the sputtering particles from the targets 30a and 30B while alternately scanning in the a direction and the B direction.
By thus irradiating the substrate W with the sputtered particles from both directions, the film 55 can be formed in a state of overhanging to both sides on the upper portion of the convex portion 51 of the groove pattern as shown in fig. 12 by one film formation.
In this case, the incident angle of the sputtering particles can be easily adjusted by using the sputtering particle shielding plate 18 provided with the two through holes 19a and 19b and the fins 35a and 35b around them as shown in fig. 3. That is, by adjusting the angles of the fin-shaped member 35a and the fin-shaped member 35b, the incident angle of the sputtering particles can be adjusted, and the shape of the film 55 formed on the upper portion of the concave portion 51 can be adjusted.
Further, by changing the arrangement and the angle of the two targets, the plane angle and the incident angle of the sputtered particles with respect to the substrate W can be variously changed, and various film formation can be performed according to the pattern formed on the substrate W.
For example, as shown in fig. 13A, the film formation shown in fig. 12 can be performed by arranging two targets 30a and 30b so as to be perpendicular to the scanning direction of the substrate W and to be parallel to each other. Further, as shown in fig. 13B, by arranging the two targets 30a and 30B so as to be inclined and symmetrical with respect to a line parallel to the scanning direction of the substrate W, it is possible to form a film by irradiating the substrate W with the sputtering particles from two directions on one side of the moving direction of the substrate.
As described above, the film formation can be controlled by appropriately adjusting the incidence angle of the fin-shaped member around the hole and the arrangement and angle of the target. That is, the position of the film to be formed, the shape of the film, and the like can be arbitrarily controlled for various patterns of the substrate W.
< embodiment 2 >
Next, embodiment 2 will be explained.
Fig. 14 is a schematic configuration diagram showing an example of the film formation system according to embodiment 2, and fig. 15 is a sectional view showing the film formation apparatus according to embodiment 1.
The film formation system 100 has a polygonal vacuum transfer chamber 101. A 1 st film forming apparatus 102a and a 2 nd film forming apparatus 102b are connected to the vacuum transfer chamber 101 via a gate valve G so that the 1 st film forming apparatus 102a and the 2 nd film forming apparatus 102b face each other, and the substrate rotation chamber 103 is connected to the vacuum transfer chamber 101 between the 1 st film forming apparatus 102a and the 2 nd film forming apparatus 102 b. Two load-lock chambers 104 are connected to the vacuum transfer chamber 101 on the side opposite to the substrate rotation chamber 103 via a gate valve G1. An atmospheric transfer chamber 105 is provided on the side of the vacuum transfer chamber 101 opposite to the substrate rotation chamber 103 with two load-lock chambers 104 interposed therebetween. The two load-lock chambers 104 are connected to the atmospheric transfer chamber 105 via a gate valve G2. The load-lock chamber 104 is used for pressure control between atmospheric pressure and vacuum when the substrate W is transferred between the atmospheric transfer chamber 105 and the vacuum transfer chamber 101.
A wall portion on the side opposite to the mounting wall portion of the load lock 104 of the atmospheric transfer chamber 105 has 3 carrier mounting portions 106 for mounting carriers (FOUPs or the like) C for accommodating substrates W. In addition, an alignment chamber 107 for aligning the substrate W by rotating it is provided on a side wall of the atmospheric transfer chamber 105. A downward flow of clean air is formed within the atmospheric delivery chamber 105. Reference numeral 108 is a stage of the carrier C.
The 1 st substrate conveyance mechanism 110 is provided in the vacuum conveyance chamber 101. The substrate transfer module is composed of a vacuum transfer chamber 101 and a 1 st substrate transfer mechanism 110. The 1 st substrate transfer mechanism 110 transfers the substrate W to the 1 st film forming apparatus 102a, the 2 nd film forming apparatus 102b, the substrate rotation chamber 103, and the load lock chamber 104.
The 2 nd substrate transfer mechanism 111 is provided in the atmospheric transfer chamber 105. The 2 nd substrate transfer mechanism 111 transfers the wafer W to the carrier C, the load-lock chamber 104, and the alignment chamber 107.
As shown in fig. 15, the 1 st film forming apparatus 102a is configured in the same manner as the film forming apparatus 1 of the 1 st embodiment except that only the sputtering particle emitting portion 12a is provided as the sputtering particle emitting portion and the sputtering particle emitting portion 12b is not provided. The 2 nd film forming apparatus 102b also has the same configuration.
The substrate rotation chamber 103 functions as a substrate rotation mechanism for rotating the substrate W in a horizontal plane to change the orientation of the substrate, and has a configuration similar to that of the alignment chamber 107.
The film formation system 100 includes an overall control unit 115 configured by a computer. The overall controller 115 includes a main Controller (CPU) that controls the 1 st and 2 nd film forming apparatuses 102a and 102b, the substrate rotation chamber 103, the load lock chamber 104, the vacuum transfer chamber 101, the 1 st and 2 nd substrate transfer mechanisms 110 and 111, and the drive systems of the gate valves G, G1 and G2. The overall control unit 115 includes an input device, an output device, a display device, and a storage device (storage medium). The main controller of the overall controller 115 causes the film formation system 100 to execute a predetermined operation based on a process procedure of a storage medium stored in a storage device, for example.
In the film formation system 100 configured as described above, the film formation by sputtering is performed on both sides of the convex portion by using the 1 st film formation apparatus 102a and the 2 nd film formation apparatus 102 b.
First, the substrate W is taken out from the carrier C by the 2 nd transport mechanism 111, and after passing through the alignment chamber 107, the substrate W is input into any one of the load-lock chambers 104. Then, the load-lock chamber 104 is evacuated. Then, the substrate W in the load-lock chamber 104 is transferred into the chamber of the 1 st film forming apparatus 102a by the 1 st transfer mechanism 110.
In the 1 st film forming apparatus 102a, the sputtering particles are obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a while moving the substrate W on the substrate supporting portion 14 in one of the horizontal directions in the chamber. As a result, the sputtered particles are obliquely incident on the substrate W from one direction, and the 1 st film 53 is formed on the convex portion 51 side of the substrate W as shown in fig. 6A.
Next, the substrate W is conveyed from the chamber of the 1 st film forming apparatus 102a by the 1 st conveying mechanism 110, and is conveyed to the substrate rotating chamber 103 to rotate the substrate W by, for example, 180 °.
Next, the substrate W after rotation is carried into the chamber of the 2 nd film forming apparatus 102b by the 1 st transport mechanism 110.
In the 2 nd film forming apparatus 102b, similarly, the sputtering particles are obliquely discharged from the target 30a of the 1 st sputtering particle discharging portion 12a while moving the substrate W on the substrate support portion 14 in one of the horizontal directions in the chamber. Thereby, the sputtered particles are obliquely incident on the substrate W from one direction. At this time, the substrate W is rotated (inverted) by 180 °, and thus, as shown in fig. 6B, the 2 nd film 54 is formed on the opposite side of the convex portion 51 from the 1 st film 53.
By alternately repeating the film formation by the 1 st film formation device 102a and the film formation by the 2 nd film formation device 102b as described above, the film can be grown in the substantially vertical direction as shown in fig. 6C.
As described above, in the present embodiment, the film formation system includes: a plurality of processing devices capable of sputtering a substrate obliquely from at least one direction in a chamber; a transfer mechanism that transfers substrates between chambers of the plurality of processing apparatuses; and a substrate rotating mechanism that rotates the substrate in a plane. With this configuration, one side of the convex portion of the groove pattern can be sputtered by 1 film formation device, and the other side of the convex portion can be sputtered by another film formation device. This enables alternate sputtering of the convex portions of the groove pattern.
The rotation of the substrate W does not necessarily need to be performed by providing the substrate rotation chamber 103 in the vacuum transfer chamber 101, and a substrate rotation mechanism may be provided in any chamber of the film formation apparatus, or the substrate W may be rotated by using, for example, the alignment chamber 107 outside the vacuum system.
The rotation angle of the substrate W in the substrate rotation chamber 103 and the like is not limited to 180 °, and may be set to any angle. Thus, an arbitrary portion of the pattern convex portion formed on the substrate W can be opposed to the target of the film forming apparatus, so that the adjustment of the sputtering portion can be easily performed, and the degree of freedom of the film distribution (Japanese: つきまわり) can be improved. Therefore, the adjustment range is wider than the case where a plurality of targets whose installation angles are adjusted are fixedly arranged, and the adjustment range is advantageous in terms of space occupation and cost.
For example, the film formation as shown in fig. 16A and 16B can be performed. First, as shown in fig. 16A, the convex portions 61 of the groove pattern are alternately formed by rotating the substrate W by 180 ° in a direction perpendicular to the substrate W in a plan view, and the film 62 is formed on the long side. Next, as shown in fig. 16B, the substrate is rotated by 90 ° by the substrate rotation chamber 103, and then the convex portions 61 of the groove pattern are alternately formed by rotating the substrate W by 180 ° in a direction parallel to the substrate W in a plan view, thereby forming the film 63 on the short side. This enables film formation on the entire surface of the projection 61.
Further, in the above example, the following case is shown: after a film is formed on one side of the convex portion by the 1 st film forming apparatus 102a, the substrate is rotated by the substrate rotating chamber 103, and a film is formed on the other side of the convex portion by the 2 nd film forming apparatus 102 b. For example, only the 1 st film forming apparatus 102a may be provided as the film forming apparatus. In this case, after a film is formed on one side of the convex portion by the 1 st film forming apparatus 102a, the substrate is rotated by the substrate rotating chamber 103, and a film can be formed on the other side of the convex portion again by the 1 st film forming apparatus 102 a.
< embodiment 3 >
Next, embodiment 3 will be explained.
Fig. 17 is a schematic configuration diagram showing an example of the film formation system according to embodiment 3, and fig. 18 is a sectional view showing the film formation apparatus according to embodiment 2.
This film formation system 100a is basically the same as the film formation system 100 used in embodiment 2 shown in fig. 14, but is different from the film formation system 100 in that the substrate rotation chamber 103 is not present and the 2 nd film formation apparatus 102 b' is different from embodiment 2.
As shown in fig. 18, the 2 nd film forming apparatus 102 b' is configured in the same manner as the film forming apparatus 1 of the 1 st embodiment except that only the sputtering particle emitting portion 12b is provided as the sputtering particle emitting portion and the sputtering particle emitting portion 12a is not provided. That is, the 2 nd film forming apparatus 102 b' discharges the sputtered particles from the sputtered particle discharging portion on the opposite side of the 1 st film forming apparatus 102 a.
In this way, a plurality of film forming apparatuses arranged in a chamber of the sputtering particle discharging section in a mutually reverse direction are mounted in a mixed manner, and the substrate is conveyed therebetween, so that the convex portions of the groove pattern can be alternately sputtered without rotating the substrate. This contributes to simplification of the film formation system structure, reduction in the occupied space, and reduction in cost.
Preferred examples include the following. In the 1 st film forming apparatus 102a in which a target (sputtering particle emitting portion) is disposed on the opposite side of an input/output port (gate valve G) of a substrate, the substrate W is scanned from the input/output port side to the target side. On the other hand, in the 2 nd film forming apparatus 102 b' in which the target (sputtering particle emitting portion) is disposed on the input/output port (gate valve G) side, the substrate is scanned from the side opposite to the input/output port side. By alternately performing these processes, it is possible to perform a preferable alternate film formation on the convex portions of the groove pattern without using a substrate rotation chamber. That is, the scanning directions of the substrates W in the 1 st and 2 nd film forming apparatuses 102a and 102 b' are preferably opposite to each other with respect to the input/output ports.
< embodiment 4 >
Next, embodiment 4 will be explained.
Fig. 19 is a schematic configuration diagram showing an example of the film formation system used in embodiment 4.
This film formation system 100b is basically the same as the film formation system 100 used in embodiment 2 shown in fig. 14, but is different from the film formation system 100 in that a processing apparatus 120 that performs a process other than sputtering film formation is provided instead of the 2 nd film formation apparatus 102 b.
The processing apparatus 120 may be a heating apparatus, a cooling apparatus, an etching apparatus, or the like.
In this way, the film deposition apparatus is only the 1 st film deposition apparatus 102a, and after one side of the convex portion is deposited, the substrate W is rotated by the substrate rotation chamber 103, and the substrate W is again input to the 1 st film deposition apparatus 102a, whereby the other side of the convex portion can be deposited. Further, by providing the processing apparatus 120, it is also possible to appropriately perform processes other than sputtering film formation, such as heating, cooling, and etching, as necessary before, during, and after the sputtering process.
In the present embodiment, the number of the film deposition apparatuses and the number of the processing apparatuses may be at least 1, or a plurality of the apparatuses may be provided. In the case of a plurality of processing devices, processing devices having different functions may be provided.
< embodiment 5 >
Next, embodiment 5 will be explained.
The film forming system of the present embodiment includes: a plurality of film forming apparatuses; a plurality of vacuum transfer chambers (transfer modules) arranged in series; and a substrate rotating chamber (substrate rotating mechanism) provided between the plurality of vacuum transfer chambers for serially transferring the substrates.
Fig. 20 is a schematic configuration diagram showing an example of the film formation system used in embodiment 5.
The film formation system 100C includes an atmospheric transport chamber 105 in which 3 carriers C are mounted, as in the film formation system 100 of embodiment 2, and two load- lock chambers 104a and 104b and an alignment chamber 107 are provided in the atmospheric transport chamber 105. The 2 nd conveyance mechanism 111 is provided in the atmosphere conveyance chamber 105.
The load- lock chambers 104a and 104b are connected to the 1 st vacuum transfer chamber 131a via a gate valve G1. Further, a 2 nd vacuum transfer chamber 131b, a 3 rd vacuum transfer chamber 131c, and a 4 th vacuum transfer chamber 131d are connected in series to the 1 st vacuum transfer chamber 131a via 1 st to 3 rd substrate rotation chambers 133a, 133b, and 133 c. The 1 st vacuum transfer chamber 131a to the 4 th vacuum transfer chamber 131d are provided with a 1 st transfer mechanism 110 in the same manner as the vacuum transfer chamber 101 of the film formation system 100.
Two film forming apparatuses 132a and 132b are connected to both sides of the 1 st vacuum transfer chamber 131a via a gate valve G. The 1 st substrate rotating chamber 133a is connected to the film forming apparatuses 132a and 132b via a gate valve G3, and is connected to the 2 nd vacuum transfer chamber 131b via a gate valve G4.
Two film forming apparatuses 132c and 132d are connected to both sides of the 2 nd vacuum transfer chamber 131b via a gate valve G. The 2 nd substrate rotation chamber 133b is connected to the film forming apparatuses 132c and 132d via a gate valve G3, and is connected to the 3 rd vacuum transfer chamber 131c via a gate valve G4.
Two film forming apparatuses 132e and 132f are connected to both sides of the 3 rd vacuum transfer chamber 131c via a gate valve G. The 3 rd substrate rotating chamber 133c is connected to the film forming apparatuses 132e and 132f through a gate valve G3, and is connected to the 4 th vacuum transfer chamber 131d through a gate valve G4.
Two film forming apparatuses 132G and 132h are connected to both sides of the 4 th vacuum transfer chamber 131d via a gate valve G.
The film forming apparatuses 132a to 132h have the same structure, for example, the same structure as the 1 st film forming apparatus 102a according to embodiment 2. The transfer of the substrate W between the film deposition apparatus and the substrate rotation chambers 133a to 133c may be performed by the 1 st transfer mechanism 110, or may be performed by the transfer mechanism provided in the substrate rotation chambers 133a to 133 c. The film formation system 100c includes an overall controller 115 similar to the film formation system 100.
In the film formation system 100C configured as described above, first, the substrate W is taken out from the carrier C by the 2 nd conveyance mechanism 111, passes through the alignment chamber 107, and then is loaded into the load lock chamber 104 a. Next, the inside of the load-lock chamber 104a is vacuum-exhausted. Then, the substrate W in the load lock chamber 104a is transferred into the chamber of the film forming apparatus 132a by the 1 st transfer mechanism 110 of the 1 st vacuum transfer chamber 131a, and one-sided film formation is performed. Thereafter, the substrate W is transferred to the 1 st substrate rotating chamber 133a, and the substrate W is rotated in the plane by the 1 st substrate rotating chamber 133 a. Thereafter, the substrate W in the 1 st substrate rotating chamber 133a is transferred into the chamber of the film forming apparatus 132c by the 1 st transfer mechanism 110 of the 2 nd vacuum transfer chamber 131b, and the film is formed on the opposite side by the film forming apparatus 132 c.
In this way, as indicated by the broken-line arrows in fig. 20, the substrates W are serially conveyed to the plurality of film deposition apparatuses, and the film deposition process is repeated. Upon completion of the film formation in the film forming apparatus 132b, the substrate W is conveyed to the load lock chamber 104b by the 1 st conveyance mechanism 110 of the 1 st vacuum conveyance chamber 131 a. After the load-lock chamber 104b is returned to the atmospheric pressure, the substrate W is returned to the carrier C by the 2 nd conveyance mechanism 111.
By carrying out film formation by serially transferring the substrates to a plurality of film forming apparatuses while rotating the substrates inserted in this manner, film formation can be performed alternately on both sides of the convex portion.
By performing the film formation in this manner, each film formation device only needs to perform the sputtering film formation on one side of the convex portion of the groove pattern, and therefore, the processing time at each film formation device is shorter than that in the case of performing the sputtering film formation on both sides of the convex portion. Therefore, the substrate W can be prevented from being accumulated when the substrates W are serially conveyed.
Further, a part of the substrate rotating chamber may be replaced with a processing apparatus that performs a process other than film formation, such as a heating apparatus, a cooling apparatus, and an etching apparatus. For example, the 3 rd substrate rotation chamber 133c may be replaced with a heating apparatus, and a heating process may be performed between film formation in a certain film formation apparatus and film formation in the next film formation apparatus.
< other applications >
The embodiments have been described above, but the embodiments disclosed herein are not intended to be limiting, and are given by way of illustration in all respects. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the gist thereof.
For example, the method of releasing the sputtering particles in the above embodiment is an example, and the sputtering particles may be released by another method.
In embodiment 1, an example in which two targets (sputtering particle emitting portions) are provided is shown, and the number of targets may be 3 or more. In embodiment 1, sputtering particles are released from one target while the substrate is moved in one direction in the alternate film formation, but sputtering particles may be alternately released from two targets while the substrate is moved in one direction. In addition, although the articulated arm mechanism is used as the substrate moving mechanism in embodiment 1, the present invention is not limited to this, and a mechanism capable of linearly moving a substrate such as a belt conveyor may be used. When a belt conveyor is used, the belt conveyor also serves as a substrate support portion and a substrate moving mechanism.
The film formation systems according to embodiments 2 to 5 are merely examples. For example, in embodiment 2, at least 1 film forming apparatus may be provided, and in embodiment 3, two or more of either or both of the 1 st film forming apparatus 102a and the 2 nd film forming apparatus 102 b' may be provided. In embodiment 4, two or more film forming apparatuses are provided. In the above-described embodiments 2 to 5, although the case where one sputtering particle emitting unit is used as a film deposition apparatus for performing oblique film deposition is described, a plurality of sputtering particle emitting units may be provided.

Claims (4)

1. A film forming system, comprising:
a 1 st film forming apparatus which has a 1 st sputtering particle discharging unit for discharging sputtering particles in a 1 st inclined direction, and discharges the sputtering particles from the 1 st sputtering particle discharging unit to perform sputtering film formation on a substrate while linearly moving the substrate in a 3 rd direction;
a 2 nd film forming apparatus which has a 2 nd sputtering particle discharging unit for discharging the sputtering particles in a 2 nd direction opposite to the 1 st direction, and discharges the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction to perform a sputtering film formation on the substrate; and
and a transport module that transports the substrate between the 1 st film forming apparatus and the 2 nd film forming apparatus.
2. The film forming system according to claim 1,
the 3 rd direction of the 1 st film forming apparatus and the 4 th direction of the 2 nd film forming apparatus are opposite directions to each other with respect to an input/output port for inputting and outputting a substrate by the transport module.
3. A film forming method for forming a predetermined film by a film forming system, wherein,
the film forming system comprises:
a 1 st film forming apparatus which has a 1 st sputtering particle discharging unit for discharging sputtering particles in a 1 st inclined direction, and discharges the sputtering particles from the 1 st sputtering particle discharging unit to perform sputtering film formation on a substrate while linearly moving the substrate in a 3 rd direction;
a 2 nd film forming apparatus which has a 2 nd sputtering particle discharging unit for discharging the sputtering particles in a 2 nd direction opposite to the 1 st direction, and discharges the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction to perform a sputtering film formation on the substrate; and
a transport module that transports a substrate between the 1 st film forming apparatus and the 2 nd film forming apparatus,
the film forming method comprises the following steps:
a step of performing a 1 st sputter film formation on the substrate by discharging sputter particles from the 1 st sputter particle discharging unit while linearly moving the substrate in a 3 rd direction by the 1 st film forming apparatus;
a step of transporting the substrate to the 2 nd film forming apparatus by the transport module; and
and a step of performing a 2 nd sputtering film formation on the substrate by discharging the sputtering particles from the 2 nd sputtering particle discharging unit while linearly moving the substrate in a 4 th direction by the 2 nd film forming apparatus.
4. The film forming method according to claim 3,
the 3 rd direction of the 1 st film forming apparatus and the 4 th direction of the 2 nd film forming apparatus are opposite directions to each other with respect to an input/output port for inputting and outputting a substrate by the transport module.
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