JP2021152204A - Sputtering apparatus - Google Patents

Abstract

To provide a sputtering apparatus capable of suitably adjusting film thickness distribution.SOLUTION: A sputtering apparatus includes: first and second targets ejecting a sputtering particle; a substrate support part for supporting a substrate; and a shielding plate which is arranged between the first and second targets and has a passing hole through which the sputtering particle passes. The passing hole has a first opening area for passing the sputtering particle ejected from the first target and a second opening area for passing the sputtering particle ejected from the second target. The sputtering apparatus further includes a preventive mechanism for preventing the sputtering particle ejected from the first target from passing the second opening area and the sputtering particle ejected from the second target from passing the first opening area.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a sputtering apparatus.

A sputtering apparatus is known in which sputtered particles emitted from a target are incident on a substrate such as a wafer to form a film.

Patent Document 1 describes a first sputtered particle emitting part and a second sputtered particle emitting part, a first sputtered particle discharging part, and a second sputtered particle discharging part, which have targets for discharging sputtered particles in different oblique directions in a processing space, respectively. A film forming apparatus including a sputtered particle shielding plate having a passage hole through which the sputtered particles discharged from the sputtered particle emitting portion of No. 1 is passed is disclosed.

Japanese Unexamined Patent Publication No. 2020-026575

By the way, in a configuration having a plurality of targets that emit sputtered particles, modifying the shape of the passing holes in order to adjust the film thickness distribution due to the sputtered particles emitted from each target affects the film thickness distribution from both targets. It is difficult to adjust because it gives.

One aspect of the present disclosure provides a sputtering apparatus capable of suitably adjusting the film thickness distribution.

The sputtering apparatus according to one aspect of the present disclosure is arranged between the first and second targets that emit sputtered particles, a substrate support portion that supports the substrate, and the first and second targets and the substrate. A shielding plate having a through hole through which the sputtered particles pass is provided, and the through hole comprises a first opening region through which the sputtered particles released from the first target are passed, and the second target. It has a second opening region through which the sputtered particles emitted from the first target pass, and prevents the sputtered particles emitted from the first target from passing through the second opening region, so that the second target has. It further comprises an inhibitory mechanism that prevents the sputtered particles emitted from the particles from passing through the first opening region.

According to one aspect of the present disclosure, it is possible to provide a sputtering apparatus capable of suitably adjusting the film thickness distribution.

An example of a schematic cross-sectional view of the substrate processing apparatus according to the first embodiment. An example of a schematic cross-sectional view taken along the line AA of the substrate processing apparatus according to the first embodiment. An example of a plan view of the passage holes of the sputter particle shielding plate viewed from above. The figure which shows typically the locus of sputtered particles emitted from a target. An example of a schematic cross-sectional view of the substrate processing apparatus according to the second embodiment. An example of a plan view of the passage holes of the sputter particle shielding plate viewed from above. The figure which shows typically the locus of sputtered particles emitted from a target. The figure which shows typically the locus of sputtered particles emitted from the target in the substrate processing apparatus which concerns on 1st modification. The figure which shows typically the locus of sputtered particles emitted from the target in the substrate processing apparatus which concerns on 2nd modification. The figure which shows typically the locus of sputtered particles emitted from the sputtered particle shielding plate and the target in the substrate processing apparatus which concerns on 3rd Embodiment. An example of a plan view of the passage holes of the sputter particle shielding plate viewed from above. The schematic diagram which shows an example of the incident direction of the sputter particles incident on the convex part of a substrate.

Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.

<First Embodiment>
The substrate processing apparatus (sputtering apparatus) 1 according to the first embodiment will be described with reference to FIGS. 1 to 2. FIG. 1 is an example of a schematic cross-sectional view of the substrate processing apparatus 1 according to the first embodiment. FIG. 2 is an example of a schematic cross-sectional view taken along the line AA of the substrate processing apparatus 1 according to the first embodiment. In the following description, one horizontal direction will be the X direction, the horizontal direction perpendicular to the X direction will be the Y direction, and the vertical direction will be the Z direction.

The substrate processing device 1 includes a processing chamber 10, a sputtered particle shielding plate 20, sputtered particle discharging portions 30a and 30b, a substrate supporting portion 40, a substrate moving mechanism 50, and an exhaust device 60. The substrate processing apparatus 1 is, for example, a PVD (Physical Vapor Deposition) apparatus, in which the sputtered particles (deposited atoms) emitted from the sputtered particle emitting portions 30a and 30b are placed on the substrate supporting portion 40 in the processing chamber 10. This is a sputtering device that adheres to the surface of a substrate W such as a placed semiconductor wafer to form a film.

The processing chamber 10 has a chamber body 10a having an open upper portion and a lid body 10b provided so as to close the upper opening of the chamber main body 10a. The side surface of the lid body 10b is formed as an inclined surface. The inside of the processing chamber 10 is a processing space S in which the film forming process is performed.

An exhaust port 11 is formed at the bottom of the processing chamber 10. An exhaust device 60 is connected to the exhaust port 11. The exhaust device 60 includes a pressure control valve and a vacuum pump. The processing space S is evacuated to a predetermined degree of vacuum by the exhaust device 60.

At the top of the processing chamber 10, a gas introduction port 12 for introducing gas into the processing space S is inserted. A gas supply unit (not shown) is connected to the gas introduction port 12. The sputter gas (for example, an inert gas) supplied from the gas supply unit to the gas introduction port 12 is introduced into the processing space S.

An carry-in / out port 13 for carrying in / out the substrate W is formed on the side wall of the processing chamber 10. The carry-in outlet 13 is opened and closed by the gate valve 14. The processing chamber 10 is provided adjacent to the transfer chamber 80, and the processing chamber 10 and the transfer chamber 80 communicate with each other by opening the gate valve 14. The inside of the transfer chamber 80 is maintained at a predetermined degree of vacuum, and a transfer device (not shown) for loading and unloading the substrate W into and out of the processing chamber 10 is provided therein.

The sputter particle shielding plate 20 is configured as a substantially plate-shaped member, and is horizontally arranged at an intermediate position in the height direction of the processing space S. The edge of the sputtered particle shielding plate 20 is fixed to the side wall of the chamber body 10a. The sputtered particle shielding plate 20 divides the processing space S into a first space S1 and a second space S2. The first space S1 is a space above the sputter particle shielding plate 20. The second space S2 is a space below the sputter particle shielding plate 20.

The sputtered particle shielding plate 20 is formed with slit-shaped passing holes 21 through which sputtered particles pass. The passage hole 21 penetrates the sputter particle shielding plate 20 in the plate thickness direction (Z direction). The passage hole 21 is formed in an elongated shape with the Y direction, which is one horizontal direction in the drawing, as the longitudinal direction. The length of the passage hole 21 in the Y direction is formed to be longer than the diameter of the substrate W. Further, the passage hole 21 is provided with an obstruction plate 22. Further, the passing hole 21 is provided with adjusting members 23a and 23b for adjusting the opening shape (opening area) of the passing hole 21. The obstruction plate 22 and the adjusting members 23a and 23b will be described later with reference to FIGS. 3 and 4.

The sputtered particle emitting unit 30a includes a target 31a, a target holder 32a, an insulating member 33a, a power supply 34a, a magnet 35a, and a magnet scanning mechanism 36a. Further, the sputtered particle emitting unit 30b includes a target 31b, a target holder 32b, an insulating member 33b, a power supply 34b, a magnet 35b, and a magnet scanning mechanism 36b.

The targets 31a and 31b are made of a material containing a constituent element of the film to be formed, and may be a conductive material or a dielectric material. Further, the targets 31a and 31b may be made of the same material or different materials.

The target holders 32a and 32b are made of a conductive material, are arranged above the sputtered particle shielding plate 20, and are located at different positions on the inclined surfaces of the lid 10b of the processing chamber 10 via the insulating members 33a and 33b. It is attached to. In the example shown in FIG. 1, the target holders 32a and 32b are provided at positions facing each other with the passing hole 21 interposed therebetween, but the present invention is not limited to this, and the target holders 32a and 32b can be provided at any position. The target holders 32a and 32b hold the targets 31a and 31b so that the targets 31a and 31b are positioned obliquely upward with respect to the passage hole 21.

The power supplies 34a and 34b are electrically connected to the target holders 32a and 32b, respectively. The power supplies 34a and 34b may be a DC power supply when the targets 31a and 31b are made of a conductive material, and may be a high frequency power supply when the targets 31a and 31b are made of a dielectric material. When the power supplies 34a and 34b are high-frequency power supplies, they are connected to the target holders 32a and 32b via a matching unit. When a voltage is applied to the target holders 32a and 32b, the sputter gas dissociates around the targets 31a and 31b. Then, the ions in the dissociated sputter gas collide with the targets 31a and 31b, and the sputter particles which are the particles of the constituent material are released from the targets 31a and 31b.

The magnets 35a and 35b are arranged on the back surface side of the target holders 32a and 32b, and are configured to be able to reciprocate (swing) in the Y direction by the magnet scanning mechanisms 36a and 36b. The magnet scanning mechanisms 36a and 36b include, for example, guides 37a and 37b and drive units 38a and 38b. The magnets 35a and 35b are guided by guides 37a and 37b so that they can reciprocate in the Y direction. The drive units 38a and 38b reciprocate the magnets 35a and 35b along the guides 37a and 37b.

The ions in the dissociated sputter gas are attracted by the magnetic fields of the magnets 35a and 35b and collide with the targets 31a and 31b. When the magnet scanning mechanisms 36a and 36b reciprocate the magnets 35a and 35b in the Y direction, the position where the ions collide with the targets 31a and 31b, in other words, the position where the sputtered particles are emitted changes.

The substrate support portion 40 is provided in the chamber body 10a of the processing chamber 10 and horizontally supports the substrate W via the support pins 41. The substrate support portion 40 can be linearly moved in the X direction, which is one horizontal direction, by the substrate moving mechanism 50. Therefore, the substrate W supported by the substrate support portion 40 is linearly moved in the horizontal plane by the substrate moving mechanism 50. The board moving mechanism 50 has an articulated arm portion 51 and a driving unit 52, and by driving the articulated arm unit 51 by the driving unit 52, the substrate supporting unit 40 can be moved in the X direction. ing.

That is, the moving directions (Y direction) of the magnets 35a and 35b and the moving direction (X direction) of the substrate W are orthogonal to each other. Further, the sputtered particle discharging unit 30a and the sputtered particle discharging unit 30b are arranged at both ends when viewed in the moving direction (X direction) of the substrate W.

The control unit 70 is composed of a computer and controls each component of the substrate processing device 1, for example, power supplies 34a and 34b, drive units 38a and 38b, drive unit 52, exhaust device 60 and the like. The control unit 70 has a main control unit including a CPU that actually performs these controls, and an input device, an output device, a display device, and a storage device. The storage device stores parameters of various processes executed by the board processing device 1, and is a storage medium in which a program for controlling the processes executed by the board processing device 1, that is, a processing recipe is stored. Is set. The main control unit of the control unit 70 calls a predetermined processing recipe stored in the storage medium, and causes the substrate processing apparatus 1 to execute a predetermined processing based on the processing recipe.

Next, the film forming method in the substrate processing apparatus 1 according to the first embodiment will be described.

First, after the processing space S in the processing chamber 10 is exhausted, a sputter gas (for example, an inert gas) is introduced into the processing space S from the gas introduction port 12 to adjust the pressure to a predetermined pressure.

Next, the substrate support portion 40 is positioned at the substrate transfer position, the gate valve 14 is opened, and the substrate W is placed on the substrate support portion 40 (on the support pin 41) by the transfer device (not shown) of the transfer chamber 80. .. Next, the transfer device is returned to the transfer chamber 80, and the gate valve 14 is closed.

Next, the control unit 70 controls the substrate moving mechanism 50 (driving unit 52) to move the substrate W on the substrate supporting unit 40 in the X direction, and the sputter particle emitting units 30a and 30b (power sources 34a and 34b, The drive units 38a and 38b) are controlled to obliquely emit sputtered particles from the targets 31a and 31b.

Here, the sputter particles are released by applying a voltage from the power supplies 34a and 34b to the target holders 32a and 32b, and the ions in the sputter gas dissociated around the targets 31a and 31b collide with the targets 31a and 31b. Be done. Further, the magnet scanning mechanisms 36a and 36b reciprocate the magnets 35a and 35b in the Y direction, so that the position where the ions collide with the targets 31a and 31b, in other words, the position where the sputtered particles are emitted changes.

Sputtered particles obliquely emitted from the targets 31a and 31b of the sputtered particle emitting portions 30a and 30b pass through the passage holes 21 formed in the sputtered particle shielding plate 20 and are obliquely incident on the substrate W and onto the substrate W. Accumulated.

FIG. 3 is an example of a plan view of the passage hole 21 of the sputtered particle shielding plate 20 as viewed from above. In FIG. 3, the positions where the targets 31a and 31b are projected onto the sputtered particle shielding plate 20 are shown by broken lines. Further, the position where the obstruction plate 22 is projected onto the sputter particle shielding plate 20 is indicated by a broken line. Further, an example of the substrate W conveyed by the substrate moving mechanism 50 is shown by a chain double-dashed line. Further, an example of the locus 500 of the transport path of the substrate W transported by the substrate moving mechanism 50 is shown by a chain double-dashed line.

The passage hole 21 has a substantially rectangular shape formed by edges 101 and 102 extending in the Y direction and edges 103 and 104 extending in the X direction. The edges 101 and 102 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 101 is formed on the side of the target 31a with respect to the center of the passage hole 21. The edge 102 is formed on the side of the target 31b with respect to the center of the passage hole 21. The edges 103 and 104 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The edge 101 is provided with an adjusting member 23a. The adjusting member 23a adjusts the opening shape (opening area) of the passing hole 21 by, for example, arranging the adjusting member 23a so as to project from the edge 101 toward the passing hole 21. Further, the edge 102 is provided with an adjusting member 23b. The adjusting member 23b adjusts the opening shape (opening area) of the passing hole 21 by, for example, arranging the adjusting member 23b so as to project from the edge 102 toward the passing hole 21.

The blocking plate 22 is arranged so as to divide the passage hole 21. For example, the edge 101 on which the adjusting member 23a is provided and the edge 102 on which the adjusting member 23b is provided are arranged as a plate extending in the Y direction so as to be divided.

FIG. 4 is a diagram schematically showing a trajectory of sputtered particles emitted from the target 31a. Note that in FIG. 4, the adjusting members 23a and 23b are not shown.

The blocking plate 22 divides the passage hole 21 into an opening region 201 and an opening region 202. As a result, as shown by the broken line in FIG. 4, the sputtered particles emitted from the target 31a pass through the opening region 201 formed between the edge 101 and the obstruction plate 22 and enter the substrate W. Similarly, the sputtered particles emitted from the target 31b pass through the opening region 202 formed between the edge 102 and the obstruction plate 22 and enter the substrate W.

According to such a configuration, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31a can be adjusted by adjusting the adjusting member 23a of the edge 101. Further, by adjusting the adjusting member 23b of the edge 102, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31b can be adjusted. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

In other words, as shown by the alternate long and short dash line in FIG. 4, the inhibitory plate 22 is arranged so as to hide the edge 102 when viewed from the target 31a. Similarly, the inhibition plate 22 is arranged so as to hide the edge 101 when viewed from the target 31b. With such a configuration, even if the adjusting member 23b of the edge 102 is adjusted, it is possible to prevent the film formation due to the sputtered particles emitted from the target 31a from being affected. Further, even if the adjusting member 23a of the edge 101 is adjusted, it is possible to prevent the film formation by the sputtered particles emitted from the target 31b from being affected. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

The obstruction plate 22 may be arranged so as to hide the edge 102 when viewed from the target 31a and hide the edge 101 when viewed from the target 31b. Therefore, the lower end of the obstruction plate 22 may be formed above the upper surface of the sputtered particle shielding plate 20, or may be formed below the lower surface of the sputtered particle shielding plate 20 through the passage hole 21. good. If the sputtered particle shielding plate 20 is formed below the lower surface, the amount of sputtered particles incident on the substrate W is reduced, and the film formation rate is lowered. Therefore, in terms of the film formation rate, it is preferable that the lower end of the obstruction plate 22 is formed above the upper surface of the sputter particle shielding plate 20.

The obstruction plate 22 is arranged so as to hide the edge 102 of the edges 101 and 102 on the side farther from the target 31a. Further, the obstruction plate 22 is arranged so as to hide the edge 101 of the edges 101 and 102 on the side farther from the target 31b. Therefore, the hindrance plate 22 blocks components having a low incident angle among the sputtered particles incident on the substrate W from the targets 31a and 31b. Thereby, the hindrance plate 22 can limit the incident angle of the sputtered particles.

<Second Embodiment>
The substrate processing apparatus (sputtering apparatus) 1A according to the second embodiment will be described with reference to FIG. FIG. 5 is an example of a schematic cross-sectional view of the substrate processing apparatus 1A according to the second embodiment. Here, the substrate processing apparatus 1A according to the second embodiment has a different configuration of the sputtered particle shielding plate 20A as compared with the substrate processing apparatus 1 (see FIG. 1) according to the first embodiment. Other configurations are the same, and duplicate description will be omitted.

The sputtered particle shielding plate 20A is formed with a passing hole 21 through which sputtered particles pass. Specifically, the passage holes 21 are formed as two slit-shaped passage holes 21a and 21b. The passage holes 21a and 21b penetrate the sputtered particle shielding plate 20A in the plate thickness direction (Z direction). The passage holes 21a and 21b are elongated with the Y direction, which is one horizontal direction in the drawing, as the longitudinal direction. The length of the passage holes 21a and 21b in the Y direction is formed to be longer than the diameter of the substrate W. Further, the passage hole 21a is provided with a eaves member 24a. The eaves member 24b is provided in the passage hole 21b. The passing hole 21a is provided with an adjusting member 23a for adjusting the opening shape (opening area) of the passing hole 21a. The passing hole 21b is provided with an adjusting member 23b for adjusting the opening shape (opening area) of the passing hole 21b.

FIG. 6 is an example of a plan view of the passage holes 21a and 21b of the sputtered particle shielding plate 20A as viewed from above. In FIG. 6, the positions where the targets 31a and 31b are projected onto the sputtered particle shielding plate 20A are shown by broken lines. Further, the positions where the eaves members 24a and 24b are projected onto the sputter particle shielding plate 20A are indicated by broken lines. Further, an example of the substrate W conveyed by the substrate moving mechanism 50 is shown by a chain double-dashed line. Further, an example of the locus 500 of the transport path of the substrate W transported by the substrate moving mechanism 50 is shown by a chain double-dashed line.

The passage hole 21a has a substantially rectangular shape formed by edges 111 and 112 extending in the Y direction and edges 113 and 114 extending in the X direction. The edges 111 and 112 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 111 is formed on the side of the target 31a with respect to the center of the passage hole 21a. The edge 112 is formed on the side of the target 31b with respect to the center of the passage hole 21a. The edges 113 and 114 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The passage hole 21b has a substantially rectangular shape formed by edges 121 and 122 extending in the Y direction and edges 123 and 124 extending in the X direction. The edges 121 and 122 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 121 is formed on the side of the target 31b with respect to the center of the passage hole 21b. The edge 122 is formed on the side of the target 31a with respect to the center of the passage hole 21b. The edges 123 and 124 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The edge 111 is provided with an adjusting member 23a. The adjusting member 23a adjusts the opening shape (opening area) of the passing hole 21a by arranging the adjusting member 23a so as to project from the edge 111 toward the passing hole 21a, for example. Further, the edge 121 is provided with an adjusting member 23b. The adjusting member 23b adjusts the opening shape (opening area) of the passing hole 21b by arranging the adjusting member 23b so as to project from the edge 121 toward the passing hole 21b, for example.

The eaves member 24a has a plate portion 24a1 arranged apart from the spatter particle shielding plate 20A, and a leg portion 24a2 standing upright from the upper surface of the sputter particle shielding plate 20A to support the plate portion 24a1. The plate portion 24a1 of the eaves member 24a is arranged so as to cover at least a part of the passage hole 21a when viewed from the target 31a.

Further, the eaves member 24b is arranged so as to cover at least a part of the passing hole 21b when viewed from the target 31b. The eaves member 24b has a plate portion 24b1 arranged apart from the spatter particle shielding plate 20A, and a leg portion 24b2 standing upright from the upper surface of the sputter particle shielding plate 20A to support the plate portion 24b1. The plate portion 24b1 of the eaves member 24b is arranged so as to cover at least a part of the passage hole 21b when viewed from the target 31b.

FIG. 7 is a diagram schematically showing a trajectory of sputtered particles emitted from the target 31a. Note that in FIG. 7, the adjusting members 23a and 23b are not shown.

The eaves members 24a and 24b divide the passage holes 21 (21a and 21b) into an opening region 203 and an opening region 204. As a result, as shown by the broken line in FIG. 7, the sputtered particles emitted from the target 31a pass through the opening region 203 formed between the edge 121 and the edge 122 and enter the substrate W. Similarly, the sputtered particles emitted from the target 31b pass through the opening region 204 formed between the edge 111 and the edge 112 and enter the substrate W.

According to such a configuration, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31b can be adjusted by adjusting the adjusting member 23a of the edge 111. Further, by adjusting the adjusting member 23b of the edge 121, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31a can be adjusted. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

In other words, as shown by the alternate long and short dash line in FIG. 7, the eaves member 24a is arranged so as to hide the edge 111 when viewed from the target 31a. With such a configuration, even if the adjusting member 23a of the edge 111 is adjusted, it is possible to prevent the film formation due to the sputtered particles emitted from the target 31a from being affected. Further, the eaves member 24b is arranged so as to hide the edge 121 when viewed from the target 31b. With such a configuration, even if the adjusting member 23b of the edge 121 is adjusted, it is possible to prevent the film formation due to the sputtered particles emitted from the target 31b from being affected. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

In the example shown in FIG. 7, the eaves member 24a hides the passing hole 21a when viewed from the target 31a, and the eaves member 24b hides the passing hole 21b when viewed from the target 31b. It is not limited to this. The eaves member 24a may be configured to hide the edge 111 on which the adjusting member 23a is provided when viewed from the target 31a, and the eaves member 24b may be configured to hide the edge 121 on which the adjusting member 23b is provided when viewed from the target 31b. Even in such a configuration, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

Further, in the substrate processing apparatus 1A according to the second embodiment, the sputtered particles blocked by the eaves members 24a and 24b adhere to the upper surfaces of the plate portions 24a1 and 24b1 to form a film. With such a configuration, even if the film formed on the upper surface of the plate portions 24a1, 24b1 causes film peeling, it is possible to prevent the peeled film from adhering to the substrate W.

The eaves member 24a is arranged so as to hide the edge 111 of the edges 111 and 121 on the side closer to the target 31a. Further, the eaves member 24b is arranged so as to hide the edge 121 of the edges 111 and 121 on the side closer to the target 31b. Therefore, the eaves members 24a and 24b block components having a high incident angle among the sputtered particles incident on the substrate W from the targets 31a and 31b. Thereby, the eaves members 24a and 24b can limit the incident angle of the sputtered particles.

Although the substrate processing apparatus 1 has been described above, the present disclosure is not limited to the above-described embodiment and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure described in the claims. Is.

Although it has been described that one passage hole 21 is formed in the substrate processing apparatus 1 having the obstruction plate 22 shown in FIG. 1, the present invention is not limited to this, and a plurality of passage holes 21a and 21b are formed. It may be. FIG. 8 is a diagram schematically showing a locus of sputtered particles emitted from the target 31a in the substrate processing apparatus according to the first modification. Here, the substrate processing apparatus according to the first modification has a different configuration of the sputter particle shielding plate 20B. Other configurations are the same, and duplicate description will be omitted.

The sputtered particle shielding plate 20B is formed with a passing hole 21 through which sputtered particles pass. Specifically, the passage holes 21 are formed as two slit-shaped passage holes 21a and 21b. The passing hole 21a is provided with an adjusting member (not shown in FIG. 8) for adjusting the opening shape (opening area) of the passing hole 21a. The passing hole 21b is provided with an adjusting member (not shown in FIG. 8) for adjusting the opening shape (opening area) of the passing hole 21b.

The blocking plate 22 divides the passage hole 21 into an opening region 203 and an opening region 204. As a result, as shown by the broken line in FIG. 8, the sputtered particles emitted from the target 31a pass through the opening region 204 formed between the edge 111 and the edge 112 and enter the substrate W. Similarly, the sputtered particles emitted from the target 31b pass through the opening region 203 formed between the edge 121 and the edge 122 and enter the substrate W.

According to such a configuration, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31a can be adjusted by adjusting the adjusting member of the edge 111. Further, by adjusting the adjusting member of the edge 121, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31b can be adjusted. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

In other words, as shown by the alternate long and short dash line in FIG. 8, the inhibitory plate 22 is arranged so as to hide the edge 121 when viewed from the target 31a. With such a configuration, even if the adjusting member of the edge 121 is adjusted, it is possible to prevent the film formation by the sputtered particles emitted from the target 31a from being affected. Further, the obstruction plate 22 is arranged so as to hide the edge 111 when viewed from the target 31b. With such a configuration, even if the adjusting member of the edge 111 is adjusted, it is possible to prevent the film formation by the sputtered particles emitted from the target 31b from being affected. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

Although it has been described that a plurality of passage holes 21 (21a, 21b) are formed in the substrate processing apparatus 1A having the eaves members 24a, 24b shown in FIG. 5, the present invention is not limited to this, and one passage hole 21 is formed. May be formed. FIG. 9 is a diagram schematically showing the loci of sputtered particles emitted from the targets 31a and 31b in the substrate processing apparatus according to the second modification. Here, the substrate processing apparatus according to the second modification has a different configuration of the sputter particle shielding plate 20C. Other configurations are the same, and duplicate description will be omitted.

The sputtered particle shielding plate 20C is formed with slit-shaped passing holes 21 through which sputtered particles pass. The edge 101 of the passing hole 21 is provided with an adjusting member (not shown in FIG. 9) for adjusting the opening shape (opening area) of the passing hole 21. The edge 102 of the passing hole 21 is provided with an adjusting member (not shown in FIG. 9) for adjusting the opening shape (opening area) of the passing hole 21.

The eaves members 24a and 24b divide the passage hole 21 into an opening region 205 and an opening region 206. As a result, as shown by the broken line in FIG. 9, the sputtered particles emitted from the target 31a pass through the opening region 205 formed between the edge 102 and the eaves member 24a and enter the substrate W. Similarly, the sputtered particles emitted from the target 31b pass through the opening region 206 formed between the edge 101 and the eaves member 24b and enter the substrate W.

According to such a configuration, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31b can be adjusted by adjusting the adjusting member of the edge 101. Further, by adjusting the adjusting member of the edge 102, the film thickness distribution of the film formed by the sputtered particles emitted from the target 31a can be adjusted. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

In other words, as shown by the alternate long and short dash line in FIG. 9, the eaves member 24a is arranged so as to hide the edge 101 when viewed from the target 31a. With such a configuration, even if the adjusting member of the edge 101 is adjusted, it is possible to prevent the film formation by the sputtered particles emitted from the target 31a from being affected. Further, the eaves member 24b is arranged so as to hide the edge 102 when viewed from the target 31b. With such a configuration, even if the adjusting member of the edge 102 is adjusted, it is possible to prevent the film formation by the sputtered particles emitted from the target 31b from being affected. That is, the film formation by the targets 31a and 31b can be adjusted (controlled) independently.

<Third Embodiment>
The substrate processing apparatus (sputtering apparatus) according to the third embodiment will be described with reference to FIGS. 10 to 12. FIG. 10 is a diagram schematically showing the loci of sputtered particles emitted from the sputtered particle shielding plate 20D and the targets 31a and 31b in the substrate processing apparatus according to the third embodiment. Here, the substrate processing apparatus according to the third embodiment is compared with the substrate processing apparatus 1 (see FIG. 1) according to the first embodiment and the substrate processing apparatus 1A (see FIG. 5) according to the second embodiment. The structure of the sputter particle shielding plate 20D is different. Other configurations are the same, and duplicate description will be omitted.

The sputtered particle shielding plate 20D is formed with a passing hole 21 through which sputtered particles pass. Specifically, the passage holes 21 are formed as four slit-shaped passage holes 21a1,21b1,21a2,21b2. The passage holes 21a1,21b1,21a2,21b2 are provided in the order of the passage holes 21a1, the passage holes 21b1, the passage holes 21a2, and the passage holes 21b2 when viewed in the −X direction (the transport direction of the substrate W). The passage holes 21a1,21b1,21a2,21b2 penetrate the sputtered particle shielding plate 20D in the plate thickness direction (Z direction). The passage holes 21a1,21b1,21a2,21b2 are elongated with the Y direction, which is one horizontal direction in the drawing, as the longitudinal direction. The length of the passage holes 21a1,21b1,21a2,21b2 in the Y direction is formed to be longer than the diameter of the substrate W. Further, the passage holes 21 are provided with hindrance plates 25a and 25b erected from the sputter particle shielding plate 20D. Further, the passage holes 21 are provided with eaves members 26a and 26b. Further, the passing holes 21a1, 21b1, 21, 21a2, 21b2 may be provided with an adjusting member (not shown) for adjusting the opening shape (opening area) of the passing holes.

FIG. 11 is an example of a plan view of the passage holes 21a1,21b1,21a2,21b2 of the sputtered particle shielding plate 20D as viewed from above. In FIG. 11, the positions where the targets 31a and 31b are projected onto the sputtered particle shielding plate 20D are shown by broken lines. Further, the positions where the eaves members 26a and 26b are projected onto the sputter particle shielding plate 20D are shown by broken lines. Further, an example of the substrate W conveyed by the substrate moving mechanism 50 is shown by a chain double-dashed line. Further, an example of the locus 500 of the transport path of the substrate W transported by the substrate moving mechanism 50 is shown by a chain double-dashed line.

The passage hole 21a1 has a substantially rectangular shape formed by edges 131 and 132 extending in the Y direction and edges 133 and 134 extending in the X direction. The edges 131 and 132 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 131 is formed on the side of the target 31b with respect to the center of the passage hole 21a1. The edge 132 is formed on the side of the target 31a with respect to the center of the passage hole 21a1. The edges 133 and 134 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The passage hole 21b1 has a substantially rectangular shape formed by edges 141 and 142 extending in the Y direction and edges 143 and 144 extending in the X direction. The edges 141 and 142 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 141 is formed on the side of the target 31b with respect to the center of the passage hole 21b1. The edge 142 is formed on the side of the target 31a with respect to the center of the passage hole 21b1. The edges 143 and 144 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The passage holes 21a2 have a substantially rectangular shape formed by edges 151 and 152 extending in the Y direction and edges 153 and 154 extending in the X direction. The edges 151 and 152 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 151 is formed on the side of the target 31a with respect to the center of the passage hole 21a2. The edge 152 is formed on the side of the target 31b with respect to the center of the passage hole 21a2. The edges 153 and 154 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The passage hole 21b2 has a substantially rectangular shape formed by edges 161 and 162 extending in the Y direction and edges 163 and 164 extending in the X direction. The edges 161, 162 are edges that intersect the locus 500 of the transport path of the substrate W. Further, the edge 161 is formed on the side of the target 31a with respect to the center of the passage hole 21b2. The edge 162 is formed on the side of the target 31b with respect to the center of the passage hole 21b2. The edges 163 and 164 are edges extending in the same direction as the transport direction of the substrate W, and are formed outside the locus 500 of the transport path of the substrate W.

The edge 131 and / or the edge 132 may be provided with an adjusting member (not shown) for adjusting the opening shape (opening area) of the passage hole 21a1. Further, the edge 141 and / or the edge 142 may be provided with an adjusting member (not shown) for adjusting the opening shape (opening area) of the passing hole 21b1. Further, the edge 151 and / or the edge 152 may be provided with an adjusting member (not shown) for adjusting the opening shape (opening area) of the passing hole 21a2. Further, the edge 161 and / or the edge 162 may be provided with an adjusting member (not shown) for adjusting the opening shape (opening area) of the passing hole 21b2. The adjusting member adjusts the opening shape (opening area) of the passing hole by, for example, arranging the adjusting member so as to project from the edge toward the passing hole.

Returning to FIG. 10, a further description will be given. As shown by the alternate long and short dash line in FIG. 10, the blocking plate 25a is arranged so as to hide the passage holes 21a2 (edges 151 and 152) when viewed from the target 31b. Similarly, the inhibition plate 25b is arranged so as to hide the passage holes 21b1 (edges 141 and 142) when viewed from the target 31a.

The eaves member 26a has a plate portion 26a1 arranged apart from the spatter particle shielding plate 20D, and a leg portion 26a2 standing upright from the upper surface of the sputter particle shielding plate 20D to support the plate portion 26a1. As shown by the alternate long and short dash line in FIG. 10, the plate portion 26a1 of the eaves member 26a is arranged so as to cover the passage hole 21b2 when viewed from the target 31a. Further, the eaves member 24b has a plate portion 25b1 arranged apart from the spatter particle shielding plate 20D, and a leg portion 26b2 standing upright from the upper surface of the sputter particle shielding plate 20D to support the plate portion 26b1. As shown by the alternate long and short dash line in FIG. 10, the plate portion 26b1 of the eaves member 26b is arranged so as to cover the passing hole 21a1 when viewed from the target 31b.

The blocking plates 25a, 25b and the eaves members 26a, 26b divide the passage holes 21 (21a1,21b1,21a2,21b2) into opening regions 207 to 210. As a result, as shown by the broken line in FIG. 7, the sputtered particles emitted from the target 31a pass through the opening region 207 formed between the edge 131 and the edge 132 and enter the substrate W. Further, the sputtered particles emitted from the target 31b pass through the opening region 208 formed between the edge 141 and the edge 142 and enter the substrate W. Further, the sputtered particles emitted from the target 31a pass through the opening region 209 formed between the edge 151 and the edge 152 and enter the substrate W. Further, the sputtered particles emitted from the target 31b pass through the opening region 210 formed between the edge 161 and the edge 162 and enter the substrate W.

FIG. 12 is a schematic view showing an example of the incident direction of the sputtered particles incident on the convex portion 600 of the substrate W. Here, it is assumed that the substrate W is conveyed in the −X direction (from the right side to the left side in FIG. 10). Further, a convex portion 600 such as a trench is formed on the surface of the substrate W.

When the substrate W is conveyed in the −X direction, the substrate W first passes under the passage holes 21a1. As shown in FIG. 10, the sputtered particles emitted from the target 31a pass through the passage holes 21a1 and enter the substrate W. On the other hand, the sputtered particles emitted from the target 31b are blocked by the plate portion 26b1 of the umbrella member 26b. Therefore, as shown in FIG. 12A, the sputtered particles having a large incident angle emitted from the target 31a pass through the passing holes 21a1 (opening region 207) and are incident on the convex portion 600.

Further, when the substrate W is conveyed in the −X direction, the substrate W passes under the passage hole 21b1. As shown in FIG. 10, the sputtered particles emitted from the target 31b pass through the passing holes 21b1 and enter the substrate W. On the other hand, the sputtered particles emitted from the target 31a are blocked by the shielding plate 25b. Therefore, as shown in FIG. 12B, the sputtered particles having a small incident angle emitted from the target 31b pass through the passing hole 21b1 (opening region 208) and are incident on the convex portion 600.

Further, when the substrate W is conveyed in the −X direction, the substrate W passes under the passage holes 21a2. As shown in FIG. 10, the sputtered particles emitted from the target 31a pass through the passage holes 21a2 and enter the substrate W. On the other hand, the sputtered particles emitted from the target 31b are blocked by the shielding plate 25a. Therefore, as shown in FIG. 12 (c), the sputtered particles having a small incident angle emitted from the target 31a pass through the passing holes 21a2 (opening region 209) and are incident on the convex portion 600.

Further, when the substrate W is conveyed in the −X direction, the substrate W passes under the passage hole 21b2. As shown in FIG. 10, the sputtered particles emitted from the target 31b pass through the passage holes 21b2 and enter the substrate W. On the other hand, the sputtered particles emitted from the target 31a are blocked by the plate portion 26a1 of the umbrella member 26a. Therefore, as shown in FIG. 12D, the sputtered particles having a large incident angle emitted from the target 31d pass through the passing hole 21d2 (opening region 210) and are incident on the convex portion 600.

As described above, according to the substrate processing apparatus according to the third embodiment, the film formation by the sputtered particles emitted from the target 31a and the sputtered particles emitted from the target 31b are formed by one movement (1 scan) of the substrate W. The film formation can be alternately repeated (twice in the example of FIG. 10). Further, by adjusting the positions and opening shapes of the passing holes 21a1, 21b1, 21, 21a2, and 21b2, the incident angle and the passing amount of the sputtered particles incident on the substrate W can be adjusted according to the characteristics of the materials of the targets 31a and 31b. Can be done. As a result, a symmetrical film can be efficiently formed on both sides of the convex portion 600 of the pattern formed on the substrate W (front side and rear side in the transport direction of the substrate W).

Further, by adjusting the opening shape of the passing hole 21a1, the film thickness distribution of the film formed by the sputtered particles having a large incident angle emitted from the target 31a can be adjusted. By adjusting the opening shape of the passage hole 21b1, the film thickness distribution of the film formed by the sputtered particles having a small incident angle emitted from the target 31b can be adjusted. By adjusting the opening shape of the passage holes 21a2, it is possible to adjust the film thickness distribution of the film formed by the sputtered particles having a small incident angle emitted from the target 31a. By adjusting the opening shape of the passage hole 21b2, it is possible to adjust the film thickness distribution of the film formed by the sputtered particles having a large incident angle emitted from the target 31b. That is, the film formation due to the difference between the targets 31a and 31b and the difference in the incident angle can be adjusted (controlled) independently.

W Substrate 1 Substrate processing device 10 Processing chambers 20, 20A to 20D Sputter particle shielding plates 21,21a, 21b, 21a1,21b1,21a2,21b2 Pass holes 22, 25a, 25b Inhibiting plates (inhibition mechanism)
23a, 23b Adjusting members 24a, 24b, 26a, 26b Eaves member (inhibition mechanism)
30a, 30b Sputtered particle emitting part 31a, 31b Target 40 Board support part 50 Board moving mechanism 60 Exhaust device 70 Control part 80 Conveying chamber 101-104, 111-114, 121-124, 131-134, 141-144, 151- 154,161-164 Edges 201-210 Opening area 500 Transport path locus 600 Convex part

Claims (7)

The first and second targets that emit sputtered particles,
The board support part that supports the board and
A shielding plate arranged between the first and second targets and the substrate and having a through hole through which the sputtered particles pass is provided.
The passage hole has a first opening region through which the sputtered particles emitted from the first target pass, and a second opening region through which the sputtered particles emitted from the second target pass. ,
Inhibition of preventing the sputtered particles emitted from the first target from passing through the second opening region and preventing the sputtered particles emitted from the second target from passing through the first opening region. Further equipped with a mechanism,
Sputtering equipment. The passing hole includes a first edge provided with a first adjusting member for adjusting the opening area of the passing hole and a second edge provided with a second adjusting member for adjusting the opening area of the passing hole. Have,
The first opening region is formed to include the first edge and not to include the second edge.
The second opening region is formed including the second edge and not including the first edge.
The sputtering apparatus according to claim 1. The inhibitory mechanism is an inhibitory plate placed above the passage hole.
The sputtering apparatus according to claim 1 or 2. The inhibition mechanism is a eaves member that is disposed apart from the shielding plate and has a plate portion that covers at least a part of the passage hole.
The sputtering apparatus according to claim 1 or 2. The passage hole is
It further has a third opening region through which the sputtered particles emitted from the first target pass, and a fourth opening region through which the sputtered particles emitted from the second target pass.
In the transport direction of the substrate, the first opening region, the second opening region, the third opening region, and the fourth opening region are arranged in this order.
The inhibition mechanism is
It prevents the sputtered particles emitted from the first target from passing through the fourth opening region and prevents the sputtered particles emitted from the second target from passing through the third opening region.
The sputtering apparatus according to claim 1. The inhibition mechanism has an inhibition plate erected from the shielding plate.
The sputtering apparatus according to claim 5. The inhibition mechanism has a eaves member that is disposed away from the shielding plate and has a plate portion that covers at least a part of the passage hole.
The sputtering apparatus according to claim 5 or 6.

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