KR20190118921A - Etching composition for silicone nitride and method for etching using the same - Google Patents
Etching composition for silicone nitride and method for etching using the same Download PDFInfo
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- KR20190118921A KR20190118921A KR1020180042408A KR20180042408A KR20190118921A KR 20190118921 A KR20190118921 A KR 20190118921A KR 1020180042408 A KR1020180042408 A KR 1020180042408A KR 20180042408 A KR20180042408 A KR 20180042408A KR 20190118921 A KR20190118921 A KR 20190118921A
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- nitride film
- silicon nitride
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- 238000005530 etching Methods 0.000 title claims abstract description 91
- 239000000203 mixture Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 20
- 150000004767 nitrides Chemical class 0.000 title claims description 3
- 229920001296 polysiloxane Polymers 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 64
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 64
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 24
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 21
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 14
- -1 phosphoric acid compound Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 235000011007 phosphoric acid Nutrition 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 8
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 6
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 6
- 229930195725 Mannitol Natural products 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000000594 mannitol Substances 0.000 claims description 6
- 235000010355 mannitol Nutrition 0.000 claims description 6
- 239000000600 sorbitol Substances 0.000 claims description 6
- 235000010356 sorbitol Nutrition 0.000 claims description 6
- SERLAGPUMNYUCK-DCUALPFSSA-N 1-O-alpha-D-glucopyranosyl-D-mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO[C@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O SERLAGPUMNYUCK-DCUALPFSSA-N 0.000 claims description 5
- 239000000905 isomalt Substances 0.000 claims description 5
- 235000010439 isomalt Nutrition 0.000 claims description 5
- HPIGCVXMBGOWTF-UHFFFAOYSA-N isomaltol Natural products CC(=O)C=1OC=CC=1O HPIGCVXMBGOWTF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000832 lactitol Substances 0.000 claims description 5
- 235000010448 lactitol Nutrition 0.000 claims description 5
- VQHSOMBJVWLPSR-JVCRWLNRSA-N lactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H]([C@H](O)CO)O[C@@H]1O[C@H](CO)[C@H](O)[C@H](O)[C@H]1O VQHSOMBJVWLPSR-JVCRWLNRSA-N 0.000 claims description 5
- 229960003451 lactitol Drugs 0.000 claims description 5
- HEBKCHPVOIAQTA-QWWZWVQMSA-N D-arabinitol Chemical compound OC[C@@H](O)C(O)[C@H](O)CO HEBKCHPVOIAQTA-QWWZWVQMSA-N 0.000 claims description 4
- HEBKCHPVOIAQTA-ZXFHETKHSA-N ribitol Chemical compound OC[C@H](O)[C@H](O)[C@H](O)CO HEBKCHPVOIAQTA-ZXFHETKHSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-KAZBKCHUSA-N D-altritol Chemical compound OC[C@@H](O)[C@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KAZBKCHUSA-N 0.000 claims description 3
- 239000004386 Erythritol Substances 0.000 claims description 3
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 claims description 3
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims description 3
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 claims description 3
- 235000019414 erythritol Nutrition 0.000 claims description 3
- 229940009714 erythritol Drugs 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 3
- 229940005657 pyrophosphoric acid Drugs 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 3
- 239000000811 xylitol Substances 0.000 claims description 3
- 235000010447 xylitol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 3
- 229960002675 xylitol Drugs 0.000 claims description 3
- 150000003016 phosphoric acids Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 14
- 238000001556 precipitation Methods 0.000 abstract description 7
- 239000006227 byproduct Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- LVDRREOUMKACNJ-BKMJKUGQSA-N N-[(2R,3S)-2-(4-chlorophenyl)-1-(1,4-dimethyl-2-oxoquinolin-7-yl)-6-oxopiperidin-3-yl]-2-methylpropane-1-sulfonamide Chemical compound CC(C)CS(=O)(=O)N[C@H]1CCC(=O)N([C@@H]1c1ccc(Cl)cc1)c1ccc2c(C)cc(=O)n(C)c2c1 LVDRREOUMKACNJ-BKMJKUGQSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
본 발명은 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법에 관한 것이다. 보다 상세하게는, 본 발명은 실리콘 질화막에 대한 에칭 속도를 높이고, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비를 향상시키며, 에칭 과정에서 생성되는 부산물의 석출을 억제할 수 있는 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법에 관한 것이다.The present invention relates to a silicon nitride film etching composition and an etching method using the same. More specifically, the present invention The present invention relates to a silicon nitride film etching composition capable of increasing the etching rate for a silicon nitride film, improving the etching selectivity for the silicon nitride film and the silicon oxide film, and suppressing the deposition of by-products generated during the etching process, and an etching method using the same.
실리콘 산화막 및 실리콘 질화막은 반도체 제조 공정에서 대표적인 절연막으로 사용되고 있다. 이러한 절연막은 단일층 혹은 복수층의 형태로 사용된다. 또한 실리콘 산화막 및 실리콘 질화막은 금속 배선과 같은 도전성 패턴을 형성하기 위한 하드마스크(Hard mask)로서도 사용된다.Silicon oxide films and silicon nitride films are used as representative insulating films in semiconductor manufacturing processes. Such an insulating film is used in the form of a single layer or a plurality of layers. The silicon oxide film and the silicon nitride film are also used as a hard mask for forming a conductive pattern such as metal wiring.
이러한 실리콘 질화막을 에칭 공정을 통해 제거할 때 주로 인산이 사용되고 있다. 그러나, 인산은 부식성이 있으며, 에칭 과정에서 Si(OH)4 등의 부산물이 석출되는 등 안정적인 공정 유지가 어려운 문제가 있다.Phosphoric acid is mainly used when the silicon nitride film is removed through an etching process. However, phosphoric acid is corrosive and there is a problem that it is difficult to maintain a stable process such as by-products such as Si (OH) 4 precipitated during etching.
따라서, 실리콘 질화막에 대한 에칭 속도를 높이고, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비를 향상시키며, 에칭 과정에서 생성되는 부산물의 석출을 억제할 수 있는 에칭 조성물의 개발이 필요하다.Accordingly, there is a need to develop an etching composition capable of increasing the etching rate for the silicon nitride film, improving the etching selectivity for the silicon nitride film and the silicon oxide film, and suppressing the deposition of by-products generated during the etching process.
본 발명의 목적은 실리콘 질화막에 대한 에칭 속도를 높이고, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비를 향상시키며, 에칭 과정에서 생성되는 부산물의 석출을 억제할 수 있는, 실리콘 질화막 에칭 조성물을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a silicon nitride film etching composition capable of increasing the etching rate for a silicon nitride film, improving the etching selectivity for the silicon nitride film and the silicon oxide film, and suppressing the precipitation of by-products generated during the etching process. .
본 발명의 다른 목적은 상기 실리콘 질화막 에칭 조성물을 이용한 에칭 방법을 제공하는 것이다.Another object of the present invention is to provide an etching method using the silicon nitride film etching composition.
본 발명의 실리콘 질화막 에칭 조성물은 인산 화합물; 다가 알코올; 및 물을 포함한다.The silicon nitride film etching composition of the present invention Phosphoric acid compounds; Polyhydric alcohols; And water.
구체예에서, 상기 인산 화합물은 오르토인산, 메타인산, 피로인산, 아인산 및 차인산 중 하나 이상을 포함할 수 있다.In embodiments, the phosphoric acid compound may include one or more of orthophosphoric acid, metaphosphoric acid, pyrophosphoric acid, phosphorous acid and hypophosphorous acid.
구체예에서, 상기 다가 알코올은 2가 알코올, 3가 알코올, 및 당알코올 중 하나 이상을 포함할 수 있다.In embodiments, the polyhydric alcohol may include one or more of dihydric alcohol, trihydric alcohol, and sugar alcohol.
상기 2가 알코올은 카테콜을 포함할 수 있다.The dihydric alcohol may comprise catechol.
상기 당알코올은 락티톨(Lactitol), 솔비톨(sorbitol), 만니톨(mannitol), 아이소말트(Isomalt), 자일리톨(xylitol), 에리트리톨(erythritol), 아도니톨(adonitol), 아라비톨(arabitol), 및 탈리톨(talitol) 중 하나 이상을 포함할 수 있다.The sugar alcohol is lactitol (Lactitol), sorbitol (sorbitol), mannitol (mannitol), isomalt (Isomalt), xylitol, erythritol, adonitol (adonitol), arabitol (arabitol), And talitol.
구체예에서, 상기 실리콘 질화막 에칭 조성물은, 인산 화합물 60~95 중량%; 다가 알코올 0.0001~10 중량%; 및 잔량의 물을 포함할 수 있다.In embodiments, the silicon nitride film etching composition, the phosphoric acid compound 60 to 95% by weight; 0.0001 to 10 wt% polyhydric alcohol; And residual amount of water.
상기 실리콘 질화막 에칭 조성물은 실리콘 함유 화합물을 0 초과 10 중량% 이하의 범위로 더 포함할 수 있다.The silicon nitride film etching composition may further include a silicon-containing compound in a range of more than 0 to 10% by weight or less.
상기 실리콘 함유 화합물은 하기 화학식 1로 표시되는 화합물을 포함할 수 있다:The silicon-containing compound may include a compound represented by Formula 1 below:
[화학식 1][Formula 1]
(상기 화학식 1에서, R1, R2, R3 및 R4는 각각 독립적으로 수소, 탄소 수 1~10의 알킬기, 탄소 수 1~10의 알콕시기, 탄소 수 3~10의 고리형 알킬기 또는 탄소 수 6~12의 아릴기이며, R1, R2, R3 및 R4 중 하나 이상은 수소 또는 탄소 수 1~10의 알콕시기임).(In Formula 1, R1, R2, R3 and R4 are each independently hydrogen, an alkyl group of 1 to 10 carbon atoms, an alkoxy group of 1 to 10 carbon atoms, a cyclic alkyl group of 3 to 10 carbon atoms or 6 to An aryl group of 12, and at least one of R1, R2, R3, and R4 is hydrogen or an alkoxy group having 1 to 10 carbon atoms.
구체예에서, 상기 실리콘 함유 화합물은 테트라에톡시실란(tetraethoxysilane, TEOS)을 포함할 수 있다.In embodiments, the silicon-containing compound may include tetraethoxysilane (TEOS).
구체예에서 상기 실리콘 질화막 에칭 조성물은 pH가 2 이하일 수 있다.In embodiments, the silicon nitride film etching composition may have a pH of 2 or less.
본 발명의 다른 관점은 반도체 소자의 에칭 방법에 관한 것이다. 상기 방법은 상기 실리콘 질화막 에칭 조성물을 사용하여 실리콘 질화막을 에칭하는 것을 특징으로 한다. Another aspect of the invention relates to a method of etching a semiconductor device. The method is characterized by etching the silicon nitride film using the silicon nitride film etching composition.
본 발명은 실리콘 질화막에 대한 에칭 속도를 높이고, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비를 향상시키며, 에칭 과정에서 생성되는 부산물의 석출을 억제할 수 있는, 실리콘 질화막 에칭 조성물 및 상기 실리콘 질화막 에칭 조성물을 이용한 에칭 방법을 제공하는 효과가 있다. The present invention provides a silicon nitride film etching composition and the silicon nitride film etching composition which can increase the etching rate for the silicon nitride film, improve the etching selectivity for the silicon nitride film and the silicon oxide film, and can suppress the deposition of by-products generated during the etching process. There is an effect of providing an etching method using.
본 발명의 실리콘 질화막 에칭 조성물은 인산 화합물; 다가 알코올; 및 물을 포함한다. The silicon nitride film etching composition of the present invention is a phosphoric acid compound; Polyhydric alcohols; And water.
인산 화합물Phosphoric Acid Compound
상기 인산 화합물은 실리콘 질화막의 에칭 속도를 높일 수 있다. 구체예에서 상기 인산 화합물은 오르토인산, 메타인산, 피로인산, 아인산 및 차인산 중 하나 이상을 포함할 수 있다.The phosphoric acid compound may increase the etching rate of the silicon nitride film. In embodiments, the phosphoric acid compound may include one or more of orthophosphoric acid, metaphosphoric acid, pyrophosphoric acid, phosphorous acid and hypophosphorous acid.
상기 인산 화합물은 실리콘 질화막 에칭 조성물 중 60~95 중량%, 예를 들면 75~90 중량%로 포함될 수 있다. 상기 범위 내에서 실리콘 질화막의 에칭 선택비와 에칭 속도를 확보할 수 있다.The phosphoric acid compound may be included in the silicon nitride film etching composition 60 to 95% by weight, for example 75 to 90% by weight. Within this range, the etching selectivity and the etching rate of the silicon nitride film can be ensured.
다가 알코올Polyhydric alcohol
상기 다가 알코올은 분자 내에 알코올성 하이드록시기(-0H)를 2개 이상 갖는 알코올을 의미하며, 에칭 과정에서 Si(OH)4 등의 부산물의 석출을 억제할 수 있다.The polyhydric alcohol refers to an alcohol having two or more alcoholic hydroxyl groups (-0H) in the molecule, it can suppress the precipitation of by-products such as Si (OH) 4 in the etching process.
구체예에서, 상기 다가 알코올은 2가 알코올, 3가 알코올, 및 당알코올 중 하나 이상을 포함할 수 있다.In embodiments, the polyhydric alcohol may include one or more of dihydric alcohol, trihydric alcohol, and sugar alcohol.
예를 들면, 상기 2가 알코올은 카테콜(catechol)을 포함할 수 있다.For example, the dihydric alcohol may include catechol.
구체예에서 상기 당알코올은 분자량이 2,000 이하인 것이 바람직하며, 구체적인 예로는 락티톨(Lactitol), 솔비톨(sorbitol), 만니톨(mannitol), 아이소말트(Isomalt), 자일리톨(xylitol), 에리트리톨(erythritol), 아도니톨(adonitol), 아라비톨(arabitol), 및 탈리톨(talitol) 중 하나 이상을 포함할 수 있다.In embodiments, the sugar alcohol preferably has a molecular weight of 2,000 or less, and specific examples thereof include lactitol, sorbitol, mannitol, mannitol, isomalt, xylitol, and erythritol. , Adonitol, arabitol, and talitol.
상기 다가 알코올은 상기 실리콘 질화막 에칭 조성물 중 0.0001~10 중량% 포함될 수 있다. 예를 들면, 0.0005~5 중량%, 다른 예를 들면 0.5~3 중량%로 포함될 수 있다. 상기 범위에서 Si(OH)4 등의 부산물의 석출을 대폭 억제할 수 있다.The polyhydric alcohol may be included in 0.0001 to 10% by weight of the silicon nitride film etching composition. For example, it may be included in 0.0005 to 5% by weight, for example 0.5 to 3% by weight. Within this range, precipitation of by-products such as Si (OH) 4 can be significantly suppressed.
본 발명의 실리콘 질화막 에칭 조성물은 실리콘 함유 화합물을 더 포함할 수 있다. 한 구체예에서 상기 실리콘 함유 화합물은 하기 화학식 1로 표시되는 화합물을 포함할 수 있다:The silicon nitride film etching composition of the present invention may further include a silicon-containing compound. In one embodiment, the silicon-containing compound may include a compound represented by Formula 1 below:
[화학식 1][Formula 1]
(상기 화학식 1에서, R1, R2, R3 및 R4는 각각 독립적으로 수소, 탄소 수 1~10의 알킬기, 탄소 수 1~10의 알콕시기, 탄소 수 3~10의 고리형 알킬기 또는 탄소 수 6~12의 아릴기이며, R1, R2, R3 및 R4 중 하나 이상은 수소 또는 탄소 수 1-10의 알콕시기임).(In Formula 1, R1, R2, R3 and R4 are each independently hydrogen, an alkyl group of 1 to 10 carbon atoms, an alkoxy group of 1 to 10 carbon atoms, a cyclic alkyl group of 3 to 10 carbon atoms or 6 to An aryl group of 12, and at least one of R1, R2, R3, and R4 is hydrogen or an alkoxy group having 1-10 carbon atoms.
상기 실리콘 함유 화합물의 구체예로는 테트라에톡시실란(tetraethoxysilane, TEOS) 등이 사용될 수 있다.Specific examples of the silicon-containing compound may be tetraethoxysilane (TEOS).
상기 실리콘 함유 화합물은 상기 실리콘 질화막 에칭 조성물 중 0 초과 10 중량% 이하의 범위로 포함될 수 있다. 상기 범위에서 실리콘 질화막에 대한 에칭 속도를 높일 수 있다.The silicon-containing compound may be included in the range of more than 0 to 10% by weight of the silicon nitride film etching composition. It is possible to increase the etching rate for the silicon nitride film in the above range.
한 구체예에서 상기 실리콘 질화막 에칭 조성물은 pH가 2 이하일 수 있다. 상기 조건에서 실리콘 질화막에 대한 에칭 속도를 높이면서, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비를 향상시킬 수 있다.In one embodiment, the silicon nitride film etching composition may have a pH of 2 or less. Under the above conditions, the etching selectivity for the silicon nitride film and the silicon oxide film can be improved while increasing the etching rate for the silicon nitride film.
한 구체예에서 상기 실리콘 질화막 에칭 조성물은 산화막 대비 질화막의 에칭속도의 선택비(=실리콘 질화막 에칭속도/실리콘 산화막 에칭속도)가 50:1 이상일 수 있다. 예를 들면, 50:1~350:1일 수 있다.In one embodiment, the silicon nitride film etching composition may have a selectivity ratio (= silicon nitride film etching rate / silicon oxide film etching rate) of the nitride film to the etching rate of the oxide film of 50: 1 or more. For example, it may be 50: 1 to 350: 1.
본 발명의 에칭 방법은 상기 실리콘 질화막 에칭 조성물을 사용해서 에칭하는 단계;를 포함할 수 있다.Etching method of the present invention may include the step of etching using the silicon nitride film etching composition.
이하, 본 발명의 바람직한 실시예를 통해 본 발명의 구성 및 작용을 더욱 상세히 설명하기로 한다. 다만, 이는 본 발명의 바람직한 예시로 제시된 것이며 어떠한 의미로도 이에 의해 본 발명이 제한되는 것으로 해석될 수는 없다.Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.
실시예Example 및 And 비교예Comparative example
하기 실시예와 비교예에서 사용된 성분의 구체적인 사양은 다음과 같다.Specific specifications of the components used in the following Examples and Comparative Examples are as follows.
(A) 인산 화합물: 인산(H3PO4)(농도 85%의 수용액, 대정화금)을 사용하였다.(A) Phosphoric acid compound: Phosphoric acid (H 3 PO 4 ) (aqueous concentration of 85%, large purified gold) was used.
(B1) 당알코올: 솔비톨(알드리치社)을 사용하였다.(B1) Sugar alcohol: Sorbitol (Aldrich) was used.
(B2) 2가 알코올: 카테콜(알드리치社)을 사용하였다.(B2) dihydric alcohol: catechol (Aldrich) was used.
(B3) 1가 알코올: 1-펜탄올(알드리치社)을 사용하였다.(B3) monohydric alcohol: 1-pentanol (Aldrich) was used.
(B4) 당 또는 당산: 글루코오스(알드리치社)를 사용하였다.(B4) Sugar or sugar acid: Glucose (Aldrich) was used.
(C) 물: 초순수를 사용하였다.(C) Water: Ultrapure water was used.
(D) 실리콘 함유 화합물: 테트라에톡시실란(TEOS, 알드리치社)를 사용하였다.(D) Silicon-containing compound: Tetraethoxysilane (TEOS, Aldrich) was used.
실시예Example 1~8 및 1-8 and 비교예Comparative example 1~3 1 to 3
하기 표 1에 따른 조성을 포함하는 실리콘 질화막 에칭 조성물을 제조하였다.To prepare a silicon nitride film etching composition comprising a composition according to Table 1.
상기 실시예 및 비교예에서 제조한 에칭 조성물에 대하여 에칭 평가를 하고, 그 결과를 하기 표 2에 나타내었다.Etching evaluation was performed about the etching compositions prepared in Examples and Comparative Examples, and the results are shown in Table 2 below.
(1) 실리콘 질화막 에칭 속도(Å/min): 비커에 식각용 조성물을 넣고 가열하여 온도가 160℃가 되었을 때 LP-SiN 막질을 넣고 5분간 식각한 후 전후 평균 두께 차이를 측정하여 에칭 속도를 계산하였다. 두께는 엘립소미터(M-2000, Woollam)를 이용하여 9 point에서 측정하였다.(1) Silicon nitride film etching rate (Å / min): When the etching composition is placed in a beaker and heated to 160 ° C., the film is etched for 5 minutes with LP-SiN film quality, and then the average thickness difference is measured. Calculated. The thickness was measured at 9 points using an ellipsometer (M-2000, Woollam).
(2) 실리콘 산화막 에칭 속도(Å/min): LP-SiN 막질 대신에 PE-SiO 막질을 사용한 것을 제외하고 실리콘 질화막 에칭 속도와 동일한 방법으로 평가하였다.(2) Silicon oxide film etching rate (Å / min): The evaluation was performed in the same manner as the silicon nitride film etching rate except that the PE-SiO film quality was used instead of the LP-SiN film quality.
(3) 선택비: 상기 실리콘 산화막 에칭속도에 대한 실리콘 질화막 에칭속도 선택비를 계산하여 하기 표 2에 나타내었다.(3) Selectivity: The silicon nitride film etching rate selectivity to the silicon oxide film etching rate was calculated and shown in Table 2 below.
(4) 부산물 석출 억제 효과: 에칭 과정에서 Si(OH)4 등의 부산물이 석출되어 실리콘 산화막 표면에 쌓이게 되면 실리콘 산화막에 대한 에칭 속도가, 음수가 되는 현상을 활용하여 부산물 석출 억제 효과를 확인하였다.(4) By-product precipitation suppression effect: When by-products such as Si (OH) 4 were deposited and accumulated on the surface of the silicon oxide layer during the etching process, the effect of inhibiting the by-product deposition was confirmed by utilizing the phenomenon that the etching rate for the silicon oxide layer was negative. .
상기 표 2에서와 같이, 본 발명의 실리콘 질화막 에칭 조성물은 실리콘 질화막에 대한 에칭 속도가 높고, 실리콘 질화막과 실리콘 산화막에 대한 에칭 선택비가 향상되며, 에칭 과정에서 생성되는 부산물의 석출을 억제할 수 있는 것을 알 수 있다.As shown in Table 2, the silicon nitride film etching composition of the present invention has a high etching rate for the silicon nitride film, an improved etching selectivity for the silicon nitride film and the silicon oxide film, and can suppress precipitation of by-products generated during the etching process. It can be seen that.
반면, 본 발명의 다가알코올 성분을 미포함하는 비교예 1과, 다가알코올 성분 대신, 1가 알코올 및 글루코오스를 각각 적용한 비교예 2 및 3의 경우, 에칭 과정에서 생성되는 부산물의 석출이 억제되지 않는 것을 확인할 수 있었다.On the other hand, in Comparative Example 1, which does not include the polyhydric alcohol component of the present invention, and Comparative Examples 2 and 3 in which monohydric alcohol and glucose were applied instead of the polyhydric alcohol component, precipitation of by-products generated during the etching process is not suppressed. I could confirm it.
본 발명의 단순한 변형 내지 변경은 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.Simple modifications and variations of the present invention can be easily made by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.
Claims (12)
다가알코올; 및
물;을 포함하는 실리콘 질화막 에칭 조성물.
Phosphoric acid compounds;
Polyhydric alcohol; And
Silicon nitride film etching composition comprising;
The silicon nitride film etching composition of claim 1, wherein the phosphoric acid compound comprises at least one of orthophosphoric acid, metaphosphoric acid, pyrophosphoric acid, phosphorous acid, and hypophosphorous acid.
The silicon nitride film etching composition of claim 1, wherein the polyhydric alcohol comprises at least one of a dihydric alcohol, a trihydric alcohol, and a sugar alcohol.
The silicon nitride film etching composition of claim 3, wherein the dihydric alcohol comprises catechol.
According to claim 3, wherein the sugar alcohol is lactitol (Lactitol), sorbitol (sorbitol), mannitol (mannitol), isomalt (Isomalt), xylitol, erythritol, adonitol, A silicon nitride film etching composition comprising at least one of arabitol, and talitol.
인산 화합물 60~95 중량%;
다가알코올 0.0001~10 중량%; 및
잔량의 물;을 포함하는 실리콘 질화막 에칭 조성물.
The method of claim 1, wherein the silicon nitride film etching composition,
60 to 95 wt% phosphoric acid compound;
0.0001 to 10 wt% polyhydric alcohol; And
Silicon nitride film etching composition comprising a residual amount of water.
The silicon nitride film etching composition of claim 1, wherein the silicon nitride film etching composition further comprises a silicon-containing compound in a range of more than 0 to 10 wt% or less.
[화학식 1]
(상기 화학식 1에서, R1, R2, R3 및 R4는 각각 독립적으로 수소, 탄소수 1-10의 알킬기, 탄소수 1-10의 알콕시기, 탄소수 3-10의 고리형알킬기 또는 탄소수 6-12의 아릴기이며, R1, R2, R3 및 R4 중 하나 이상은 수소 또는 탄소수 1-10의 알콕시기임)
The silicon nitride film etching composition of claim 7, wherein the silicon-containing compound comprises a compound represented by Formula 1 below:
[Formula 1]
(In Formula 1, R1, R2, R3 and R4 are each independently hydrogen, an alkyl group of 1 to 10 carbon atoms, an alkoxy group of 1 to 10 carbon atoms, a cyclic alkyl group of 3 to 10 carbon atoms or an aryl group of 6 to 12 carbon atoms At least one of R1, R2, R3 and R4 is hydrogen or an alkoxy group having 1-10 carbon atoms
The silicon nitride film etching composition of claim 8, wherein the silicon-containing compound comprises tetraethoxysilane (TEOS).
The silicon nitride film etching composition of claim 1, wherein the silicon nitride film etching composition has a pH of 2 or less.
The silicon nitride film etching composition of claim 1, wherein the silicon nitride film etching composition has an etching rate selection ratio of the nitride film to an oxide film of 50: 1 or more.
Etching a silicon nitride film using the silicon nitride film etching composition according to any one of claims 1 to 11; etching method of a semiconductor device comprising a.
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| TW201943893A (en) | 2019-11-16 |
| CN111836873B (en) | 2022-06-07 |
| WO2019198935A1 (en) | 2019-10-17 |
| CN111836873A (en) | 2020-10-27 |
| KR102362365B1 (en) | 2022-02-11 |
| TWI710667B (en) | 2020-11-21 |
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