KR20190073059A - Organic light emitting display device - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of realizing a narrow bezel while reducing a resistance difference between a display region and a non-display region. The organic light emitting display comprises: a first substrate including a display region in which pixels are arranged and a non-display region which surrounds the display region; a gate line and a data line arranged to cross each other on the first substrate to define a pixel region; a thin film transistor arranged in the pixel region; and an organic light emitting element arranged in the thin film transistor. The data line is doubly overlapped in the non-display region of the first substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

The present invention relates to an organic light emitting display.

As the information society develops, there is a growing demand for display devices for displaying images. In recent years, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) have been used.

Of the display devices, the organic light emitting display device is a self-emitting type, and has a better viewing angle and contrast ratio than a liquid crystal display device (LCD), does not require a separate backlight and is lightweight and thin, . In addition, the organic light emitting display device is capable of being driven by a DC low voltage, has a high response speed, and is particularly advantageous in manufacturing cost.

Such an organic light emitting display device has a display area for displaying an image and a non-display area for not displaying an image. A pixel is formed in a display region. The pixel is electrically connected to a source electrode or a drain electrode. An anode (anode) for injecting a hole and a cathode (cathode) And a light emitting device. When the electrons generated in the cathode and the holes generated in the anode are injected into the light emitting layer, the injected electrons and holes are combined with each other to generate an exciton, and the generated excitons are excited. To a ground state, and emits light.

In such an organic light emitting display device, as the resolution increases, the number of pixels increases in the display region, and a resistance difference may occur between the display region where the pixels are formed and the non-display regions where no pixels are formed. When a difference in resistance occurs between the display area and the non-display area, the luminance uniformity in the display area is reduced and power consumption may fluctuate.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting diode display capable of realizing a narrow bezel while reducing a resistance difference between a display region and a non-display region.

According to an aspect of the present invention, there is provided a display device including a first substrate including a display region in which pixels are disposed and a non-display region surrounding the display region, a gate line arranged to cross over the first substrate, And a data line, a thin film transistor arranged in the pixel region, and an organic light emitting element arranged on the thin film transistor, wherein the data line is doubly overlapped in the non-display region of the first substrate.

The OLED display according to an exemplary embodiment of the present invention is formed by extending the end of the data line to the non-display region, thereby reducing the resistance difference between the display region and the non-display region.

In addition, the organic light emitting diode display according to an embodiment of the present invention has a data line formed by extending a data line longer than a non-display region by having the end of the data line doubly overlapped with the narrow end of the data line, ). ≪ / RTI >

In addition, the organic light emitting diode display according to an embodiment of the present invention is formed such that the inner dam and the outer dam cover the end face of the data line, thereby preventing exposure of the end face of the data line, It is possible to prevent water from penetrating, thereby preventing the reliability of the organic light emitting display from being lowered.

The effects obtained in the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description .

1 is a perspective view illustrating an OLED display according to an embodiment of the present invention.
2 is a plan view showing the first substrate, the gate driver, the source drive IC, the flexible film, the circuit board, and the timing controller of FIG.
FIG. 3 is a cross-sectional view schematically showing one side of an organic light emitting diode display according to an exemplary embodiment, taken along line I-I 'of FIG.
4 is a plan view schematically illustrating a first substrate according to an example.
5 is a cross-sectional view of the organic light emitting diode display according to the first embodiment of the present invention, taken along line II-II 'of FIG.
6 is a cross-sectional view of the organic light emitting diode display according to the second embodiment of the present invention, taken along line II-II 'of FIG.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting display according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view showing an organic light emitting diode display according to an embodiment of the present invention, FIG. 2 is a plan view showing a first substrate, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing controller of FIG. 1 .

1 and 2, an organic light emitting diode display 10 according to an exemplary embodiment of the present invention includes a display panel 11, a gate driver 12, an integrated circuit (IC) 13, a flexible film 14, a circuit board 15,

The display panel 11 includes a first substrate S1 and a second substrate S2. The second substrate S2 may be an encapsulating substrate. The first substrate S1 and the second substrate S2 may be plastic or glass.

remind Gate lines GL, data lines DL, and pixels P are formed on one surface of the first substrate S1 facing the second substrate S2. The pixels P are provided in an area defined by the intersection structure of the gate lines GL and the data lines DL.

Each of the pixels P may include an organic light emitting element having a thin film transistor, an anode electrode, an organic light emitting layer, and a cathode electrode. Each of the pixels P supplies a predetermined current to the organic light emitting element according to the data voltage of the data line DL when a gate signal is input from the gate line GL using the thin film transistor. Thus, the organic light emitting elements of each of the pixels P can emit light at a predetermined brightness according to a predetermined current. A detailed description of the structure of each of the pixels P will be described later with reference to FIG. 5 and FIG.

The display panel 11 may be divided into a display area DA for displaying an image and pixels NDA for displaying no image as shown in FIG. In the display area DA, gate lines GL, data lines DL, and pixels P may be formed. A gate driver 12 and pads may be formed in the non-display area NDA.

remind The gate driver 12 supplies gate signals to the gate lines GL according to a gate control signal input from the timing controller 16. [ The gate driver 12 may be formed in a non-display area NDA on one side or both sides of the display area DA of the display panel 11 in a gate driver in panel (GIP) manner. Alternatively, the gate driver 12 may be formed of a driving chip, mounted on a flexible film, and mounted on a non-display area NDA on one side or both sides of the display area DA of the display panel 11 by TAB (tape automated bonding) As shown in FIG.

remind The source drive IC 13 receives the digital video data and the source control signal from the timing control unit 16. [ The source drive IC 13 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines DL. When the source drive IC 13 is fabricated from a drive chip, it can be mounted on the flexible film 14 by a COF (chip on film) or a COP (chip on plastic) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 11. [ Wires connecting the pads and the source drive IC 13 and wirings connecting the pads and the wirings of the circuit board 15 may be formed in the flexible film 14. [ The flexible film 14 is attached on the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 14 can be connected.

remind The circuit board 15 may be attached to the flexible films 14. [ The circuit board 15 may be mounted with a plurality of circuits implemented with driving chips. For example, the timing control section 16 may be mounted on the circuit board 15. [ The circuit board 15 may be a printed circuit board or a flexible printed circuit board.

remind The timing control unit 16 receives digital video data and a timing signal from an external system board through a cable of the circuit board 15. The timing control section 16 generates a gate control signal for controlling the operation timing of the gate driving section 12 and a source control signal for controlling the source drive ICs 13 based on the timing signal. The timing control section 16 supplies a gate control signal to the gate driving section 12 and supplies a source control signal to the source drive ICs 13. [

FIG. 3 is a cross-sectional view schematically showing one side of an organic light emitting diode display according to an exemplary embodiment, taken along line I-I 'of FIG.

3, the display panel 11 includes a first substrate S1, a second substrate S2, a thin film transistor layer 100 disposed between the first and second substrates S1 and S2, A light emitting device layer 200, and an encapsulation layer 300.

The first substrate S1 may be a plastic film or a glass substrate.

The thin film transistor layer 100 is disposed on the first substrate S1. The thin film transistor layer 100 may include gate lines, data lines, and thin film transistors. Each of the thin film transistors includes a gate electrode, a semiconductor layer, and source and drain electrodes. When the gate driver is formed by a gate driver in panel (GIP) scheme, the gate driver may be formed together with the thin film transistor layer 100.

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100. The organic light emitting device layer 200 includes an anode electrode, an organic light emitting layer, a cathode electrode, and a bank. Each of the organic light emitting layers may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the anode electrode and the cathode electrode, holes and electrons move to the light emitting layer through the hole transporting layer and the electron transporting layer, respectively. Since the pixels are disposed in the region where the organic light emitting device layer 200 is disposed, the region where the organic light emitting device layer 200 is disposed may be defined as a display region. The peripheral area of the display area can be defined as a non-display area.

The sealing layer 300 is disposed on the organic light emitting device layer 200. The sealing layer 300 prevents oxygen or moisture from penetrating into the organic light emitting device layer 200. The sealing layer 300 may include at least one organic film and an inorganic film.

Hereinafter, the OLED display according to the first embodiment of the present invention will be described in more detail with reference to FIGS. 4 and 5. FIG.

FIG. 4 is a plan view schematically showing a first substrate according to an example, and FIG. 5 is a cross-sectional view of the OLED display according to the first embodiment of the present invention, taken along line II-II 'of FIG.

4 and 5, the first substrate S1 is divided into a display area DA and a non-display area NDA, and a dam (DAM) may be formed in the non-display area NDA.

A thin film transistor layer 100, an organic light emitting device layer 200, and an encapsulating layer 300 are formed on a display region DA of the first substrate S1.

The thin film transistor layer 100 includes thin film transistors 120, a gate insulating layer 130, an interlayer insulating layer 140, and a planarization layer 150.

A buffer film 110 is disposed on one surface of the first substrate S1. The buffer layer 110 is disposed on one surface of the first substrate S1 to protect the thin film transistors 120 and the organic light emitting devices 210 from moisture penetrating through the first substrate S1 susceptible to moisture permeation do. One surface of the first substrate S1 may be a surface facing the second substrate S2. The buffer film 110 may be formed of a plurality of alternately stacked inorganic films. For example, the buffer film 110 may be formed of multiple films in which one or more inorganic films of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and SiON are alternately stacked. The buffer film 110 may be omitted.

The thin film transistor 120 is disposed on the buffer film 110. The thin film transistor 120 includes an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. [ 5, the thin film transistor 120 is formed by a top gate method in which the gate electrode 122 is located on the top of the active layer 121. However, the present invention is not limited thereto. That is, the thin film transistors 120 may be formed by a bottom gate method in which the gate electrode 122 is located under the active layer 121 or a bottom gate method in which the gate electrode 122 is formed on the upper and lower portions of the active layer 121 And may be formed in a double gate manner.

The active layer 121 is disposed on the buffer layer 110. The active layer 121 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light shielding layer for shielding external light incident on the active layer 121 may be disposed between the buffer layer 110 and the active layer 121. [

The gate insulating layer 130 may be disposed on the active layer 121. The gate insulating film 130 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

The gate electrode 122 and the gate line (not shown) may be disposed on the gate insulating layer 130. The gate electrode 122 and the gate line (not shown) may be formed of at least one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Cu), or an alloy thereof.

The interlayer insulating layer 140 may be disposed on the gate electrode 122 and the gate line (not shown). The interlayer insulating film 140 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

The source electrode 123, the drain electrode 124, and the data line DL may be disposed on the interlayer insulating layer 140. That is, the data line DL according to the first embodiment of the present invention is disposed in the same layer as the source electrode 123 and the drain electrode 124.

Each of the source electrode 123 and the drain electrode 124 may be connected to the active layer 121 through a contact hole passing through the gate insulating film 130 and the interlayer insulating film 140. The source electrode 123 and the drain electrode 124 may be formed of at least one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Or an alloy of any of these materials.

The source electrode 123 and the drain electrode 124 according to an example include external source and drain lines 123a and 124a provided on the surfaces of the source and drain electrodes 123 and 124, And internal source and drain lines 123b and 124b provided between the gate electrodes 123a and 124a.

The external source and drain lines 123a and 124a are formed between the interlayer insulating layer 140 and the internal source and drain lines 123b and 124b so as to form a gap between the interlayer insulating layer 140 and the internal source and drain lines 123b and 124b. It can serve to enhance adhesion. The external source and drain lines 123a and 124a also protect the bottom and top surfaces of the inner source and drain lines 123b and 124b to prevent corrosion of the bottom and top surfaces of the inner source and drain lines 123b and 124b . Thus, the degree of oxidation of the external source and drain lines 123a and 124a may be less than the degree of oxidation of the internal source and drain lines 123b and 124b. That is, the material forming the external source and drain lines 123a and 124a may be made of a material having higher corrosion resistance than the material forming the internal source and drain lines 123b and 124b. Thus, the external source and drain lines 123a and 124a serve as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi) or titanium (Ti). However, no.

The internal source and drain lines 123b and 124b are formed between the external source and drain lines 123a and 124a. The internal source and drain lines 123b and 124b may be made of copper (Cu) or aluminum (Al) having a low resistance, but are not limited thereto. The inner source and drain lines 123b and 124b may be made of a metal having a relatively lower resistance than the outer source and drain lines 123a and 124a. In order to reduce the total resistance of the source electrode 123, the thickness of the internal source and drain lines 123b and 124b may be formed to be thicker than the thickness of the external source and drain lines 123a and 124a.

The data line DL according to the first embodiment of the present invention includes external data lines 125a provided on the surface of the data line DL and internal data lines 125a provided between the external data lines 125a 125b.

The external data line 125a may be formed between the interlayer insulating layer 140 and the internal data line 125b to improve adhesion between the interlayer insulating layer 140 and the internal data line 125b. Further, the external data lines 125a can protect the lower and upper surfaces of the internal data lines 125b, thereby preventing the lower and upper surfaces of the internal data lines 125b from being corroded. Therefore, the degree of oxidation of the external data line 125a may be smaller than the degree of oxidation of the internal data line 125b. That is, the material forming the external data line 125a may be made of a material having higher corrosion resistance than the material forming the internal data line 125b. As described above, the external data line 125a serves as an adhesion promoting layer or an anti-corrosion layer. The external data line 125a may be made of an alloy of molybdenum and titanium (MoTi) or titanium (Ti), but is not limited thereto.

The internal data lines 125b are formed between the external data lines 125a. The internal data line 125b may be made of copper (Cu) or aluminum (Al) having a low resistance, but is not limited thereto. The internal data line 125b may be made of a metal having a relatively lower resistance than the external data line 125a. In order to reduce the total resistance of the source electrode 123, it is preferable that the thickness of the internal data line 125b is formed thicker than the thickness of the external data line 125a.

The data line DL may be formed of the same material and the same thickness as the source and drain electrodes 123 and 124. In this case, the data line DL and the source and drain electrodes 123 and 124 can be simultaneously formed through the same process.

In such an organic light emitting display device, the pixel P is increased in the display area DA and the display area DA in which the pixel P is formed and the display area DA in which the pixel P is not formed are not displayed There is a problem that a resistance difference occurs between the regions (NDA). If there is a resistance difference between the display area DA and the non-display area NDA, the luminance uniformity in the display area DA is reduced and power consumption may fluctuate.

In order to solve such a problem, the organic light emitting diode display according to the first embodiment of the present invention is characterized in that the data line DL extends to the non-display area NDA of the first substrate S1, And has a bent shape. The data line DL according to the first embodiment of the present invention is formed by extending the end portion to the non-display region NDA, so that the resistance difference between the display region DA and the non-display region NDA of the OLED display Can be reduced. In addition, the data line DL according to the first embodiment of the present invention is formed by extending the data line DL out of the non-display area NDA by extending the data line DL in a double- Bezel (Narrow Bezel) can be implemented.

More specifically, the data line DL according to the first embodiment of the present invention includes a first data line DL1, a second data line DL2, a data connection (DLL), and a data insulation layer 126 .

The first data line DL1 is disposed on the interlayer insulating layer 140. The first data line DL1 extends to the non-display area NDA, and the end portion overlaps the dam (DAM) described later.

The second data line DL2 is disposed on the first data line DL1. The second data line DL2 is connected to the first data line DL1 by the data connection unit DLL. And the second data line DL2 may be provided only in the non-display area NDA.

The data insulating film 126 is disposed between the first data line DL1 and the second data line DL2. The data insulating film 126 insulates the first data line DL1 and the second data line DL2 so that the length of the data line DL is extended. The data insulating film 126 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof.

As described above, the data line DL according to the first embodiment of the present invention is formed by arranging the second data line DL2 on the first data line DL1 to extend the length of the data line DL, It is possible to reduce the resistance difference between the display area DA of the display device and the non-display area NDA, thereby reducing the luminance uniformity in the display area and preventing the power consumption from fluctuating.

The data line DL according to the first embodiment of the present invention is formed by disposing the second data line DL2 on the first data line DL1 so that the ends of the data line DL are doubly overlapped A narrow bezel can be realized while the data line DL is extended outside the non-display area NDA.

A protective film (not shown) for insulating the TFT 120 may be disposed on the source electrode 123, the drain electrode 124, and the data line DL. The protective film may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof. The protective film may be omitted.

The planarization layer 150 may be disposed on the interlayer insulating layer 140 to flatten a step due to the thin film transistor 120. The planarization layer 150 may be formed of an organic layer such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. have.

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100. The organic light emitting device layer 200 includes an organic light emitting device 210 and a bank 220.

The organic light emitting diode 210 and the bank 220 are disposed on the thin film transistor 120 and the planarization layer 150. The organic light emitting device 210 includes an anode 211, an organic light emitting layer 212, and a cathode 213.

remind The anode electrode 211 may be disposed on the planarizing film 150. The anode electrode 211 according to an exemplary embodiment of the present invention includes a first anode 211a disposed in the display area DA and a second anode 211c spaced apart from the first anode 211a and disposed in the non- 2 anode electrode 211b.

The first anode electrode 211a is connected to the source electrode 123 of the thin film transistor 120 through a contact hole passing through the planarization layer 150. The first anode electrode 211a is formed of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, APC / ITO). ≪ / RTI > The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The second anode 211b is spaced apart from the first anode 211a and is disposed on the top of the end of the planarization layer 150 and extends to the top of the data line DL. The second anode electrode 211b according to the first embodiment of the present invention is disposed so as to cover the end of the second data line DL2. More specifically, the second anode electrode 211b is extended to the side surface and the upper surface of the second data line D2 above the first data line DL1. Therefore, the second anode electrode 211b prevents the end face of the data line DL from being exposed, and can prevent the end face of the data line DL from becoming a moisture permeation path through which moisture permeates. The second anode 211b is made of the same material as the first anode 211a.

The bank 220 may be disposed on the planarization layer 150 and the anode electrode 211. The bank 220 may be arranged to cover the edge of the anode electrode 211 on the planarizing film 150 to partition the pixels P. [ That is, the bank 220 serves as a pixel defining film P defining the pixels P. The bank 220 may be formed of an organic film such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin .

The organic light emitting layer 212 is disposed on the anode electrode 211 and the bank 220. The organic light emitting layer 212 may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the anode electrode 211 and the cathode electrode 213, holes and electrons move to the light emitting layer through the hole transporting layer and the electron transporting layer, respectively.

The organic light emitting layer 212 may be a white light emitting layer that emits white light. In this case, the organic light emitting layer 212 may be disposed to cover the first anode 211a and the bank 220. [ A color filter (not shown) may be disposed on the second substrate S2.

Alternatively, the organic light emitting layer 212 may include a red light emitting layer for emitting red light, a green light emitting layer for emitting green light, or a blue light emitting layer for emitting blue light. In this case, the organic light emitting layer 212 may be disposed in a region corresponding to the anode electrode 211, and a color filter may not be disposed on the second substrate S2.

The cathode electrode 213 is disposed on the organic light emitting layer 212. The cathode electrode 213 may be formed of a transparent conductive material such as ITO or IZO or a transparent conductive material such as magnesium, , Silver (Ag), or a semi-transmissive conductive material such as an alloy of magnesium (Mg) and silver (Ag). A capping layer may be disposed on the cathode electrode 213.

The sealing layer 300 may be extended to the display area DA of the first substrate S1 as well as to the non-display area NDA on the organic light emitting device layer 200. [ The sealing layer 300 according to an exemplary embodiment of the present invention includes a sealing film 310, a dam (DAM), a flap prevention film 320, and a partition PW.

The sealing film 310 is disposed on the bank 220 and covers the display area DA to prevent oxygen or moisture from penetrating the organic light emitting layer 212 and the cathode electrode 213 . For this purpose, the sealing film 310 may comprise at least one inorganic film and at least one organic film. For example, the sealing film 310 may include a first inorganic film 311, an organic film 312, and a second inorganic film 313.

The first inorganic film 311 may be disposed on the cathode electrode 213. The first inorganic film 311 may be disposed so as to cover the cathode electrode 213. Specifically, the first inorganic film 311 covers the cathode electrode 262 and the bank 220 in the display region DA and extends to the non-display region NDA to form the second anode electrode 211b, the dam DAM), and an interlayer insulating film 140, as shown in FIG. The end of the first inorganic film 311 is disposed on the interlayer insulating film 140, and the thickness of the end of the first inorganic film 311 may be formed to be somewhat thinner by the process. In addition, the first inorganic film 311 may have a stepped portion according to a structure disposed at a lower portion thereof, and a defect may be generated due to a stepped portion.

The organic film 312 is disposed on the first inorganic film 311 in order to compensate for defects and level differences that may occur in the first inorganic film 311. [ The organic layer 312 prevents the particles from penetrating the first inorganic layer 311 and into the organic light emitting layer 212 and the cathode 213 and may be formed to have a sufficient thickness have. The organic film 312 may be formed on a substrate in a liquid form through an inkjet process, and then may be formed through a curing process.

The second inorganic film 313 may be disposed on the organic film 312. The second inorganic film 313 may be disposed so as to cover the organic film 312. Specifically, the second inorganic film 313 covers the organic film 312 in the display area DA and extends to the non-display area NDA to cover the dam DAM and the first inorganic film 311 . The second inorganic film 313 does not have defects or step differences due to the organic film 312 disposed at the lower portion thereof and thus does not form a path through which external moisture permeates into the device, 10 can be prevented from being degraded in reliability and quality. The end of the second inorganic film 313 is disposed on the interlayer insulating film 140, and the thickness of the end of the second inorganic film 313 may be formed to be somewhat thinner by the process.

Each of the first and second inorganic films 311 and 313 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. The organic layer 312 may be formed of an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

remind The dam DAM is disposed in the non-display area NDA to block the flow of the organic film 312 constituting the sealing film 310. More specifically, the dam DAM is disposed so as to surround the outside of the display area DA to block the flow of the organic film 312 constituting the sealing film 310. The dam DAM is disposed in the non-display area NDA to cover the organic film 312 so that the organic film 312 constituting the sealing film 310 can not penetrate into the pad (not shown) exposed by the contact hole. Can be blocked. Thus, the dam (DAM) can prevent the organic film 312 from being exposed to the outside of the display device or from penetrating into the pad.

The dam (DAM) according to the first embodiment of the present invention is disposed on the interlayer insulating layer 140 and is disposed to cover the data connection portion (DLL) of the data line DL. Therefore, the dam DAM prevents the cross section of the data line DL from being exposed and prevents oxygen or moisture from penetrating the cross section of the data line DL, Can be prevented from being lowered.

In the OLED display according to the first embodiment of the present invention, since the end of the data line DL extends to the non-display area NDA, the display area DA and the non- Can be reduced.

The organic light emitting display device according to the first embodiment of the present invention has a structure in which the end of the data line DL is doubly overlapped and bent so that the data line DL extends longer than the non- And a narrow bezel can be realized.

6 is a cross-sectional view of the organic light emitting diode display according to the second embodiment of the present invention, taken along line II-II 'of FIG.

The organic light emitting display shown in FIG. 6 is the same as the organic light emitting display described with reference to FIGS. 5 and 6 except for the dam (DAM). Accordingly, only the dam (DAM) will be described in the following description, and redundant description of the same configuration will be omitted.

Referring to FIG. 6, the dam (DAM) of the OLED display according to the second embodiment of the present invention includes an inner dam (ID) and an outer dam (OD).

The internal dam ID is disposed adjacent to the display area DA and is disposed so as to surround the outer periphery of the display area DA. The internal dam ID can primarily block the flow of the organic film 312 constituting the sealing film 310. The internal dam ID is disposed between the display area DA and the pad area PA to prevent the organic film 312 from being exposed to the exposed pad .

The internal dam ID according to the second embodiment of the present invention is disposed so as to cover the end of the second data line DL2. Therefore, the internal dam ID prevents the cross section of the data line DL from being exposed, and it is possible to prevent the cross section of the data line DL from becoming a moisture permeation path through which moisture permeates.

The external dam (OD) is disposed so as to surround the outer perimeter of the inner dam (ID), and is spaced apart from the inner dam (ID) and arranged side by side. At this time, the interval between the external dam (OD) and the internal dam (ID) is about 30 to 40 um, but the present invention is not limited thereto. The external dam (OD) can secondarily block the organic film (312) flowing over to the outside of the internal dam (ID). The height of the external dam OD may be higher than the height of the internal dam ID, but the present invention is not limited thereto. Accordingly, the internal dam (ID) and the external dam (OD) can more effectively block the organic film 312 from being exposed to the outside of the organic light emitting display device 10 or from penetrating the exposed pads.

The external dam OD according to the second embodiment of the present invention is disposed on the interlayer insulating layer 140 and disposed to cover the data connection portion (DLL) of the data line DL. Therefore, the external dam OD prevents the cross section of the data line DL from being exposed, and prevents oxygen or moisture from penetrating the cross section of the data line DL, It is possible to prevent the reliability from deteriorating.

The internal dam ID according to the second embodiment of the present invention includes a first internal dam ID1 disposed on the data line DL and a second internal dam ID1 disposed on the first internal dam ID1 ID2). The external dam OD according to the second embodiment of the present invention includes a first external dam OD1 disposed on the interlayer insulating film 140 and a second external dam OD1 disposed on the first external dam OD1. (OD2). At this time, the first inner dam ID1 and the first outer dam OD1 may be formed of the same material as the flattening film 150. The second inner dam ID2 and the second outer dam OD2 have the same material and can be formed of the same material as the bank 220. [ Accordingly, the dam (DAM) according to the second embodiment of the present invention can be formed at the same time when forming the planarization film 150, the bank 220, and the spacer, and can be formed without any additional process.

In the OLED display according to the second embodiment of the present invention, the internal dam (ID) and the external dam (OD) are formed so as to cover the end face of the data line DL, It is possible to prevent the organic light emitting display device from being exposed and to prevent oxygen or moisture from penetrating the cross section of the data line DL, thereby preventing the reliability of the organic light emitting display device from being deteriorated.

The organic light emitting display according to the second embodiment of the present invention is formed by extending the end of the data line DL to the non-display area NDA, The resistance difference can be reduced.

The organic light emitting display according to the second embodiment of the present invention has a structure in which the ends of the data lines DL are doubly overlapped to extend the data lines DL outside the non-display area NDA And a narrow bezel can be realized.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

10: organic light emitting display device 11: display panel
S1: first substrate S2: second substrate
12: Gate driver 13: Source drive IC
14: flexible film 15: circuit board
16: timing control section 100: thin film transistor layer
110: buffer film 120: thin film transistor
121: active layer 122: gate electrode
123: source electrode 124: drain electrode
130: gate insulating film 140: interlayer insulating film
150: planarization film 200: organic light emitting element layer
210: organic light emitting element 211: anode electrode
212: organic light emitting layer 213: cathode electrode
220: bank 300: sealing layer
310: sealing film 311: first inorganic film
312: organic film 313: second inorganic film
DAM: Dam ID: Internal dam
OD: External dam DL: Data line

Claims (11)

A first substrate including a display region in which pixels are arranged, and a non-display region surrounding the display region;
A gate line and a data line arranged on the first substrate so as to intersect and defining a pixel region;
A thin film transistor arranged in the pixel region; And
And an organic light emitting element disposed on the thin film transistor,
And the data lines are doubly overlapped in a non-display region of the first substrate. The method according to claim 1,
Wherein the data line is bent at an end in the non-display region of the first substrate. The method according to claim 1,
An interlayer insulating film is further formed on the first substrate,
The data line includes a first data line disposed on the interlayer insulating film;
A second data line disposed on the first data line; And
And a data connection unit connecting the first data line and the second data line. The method of claim 3,
And a data insulating film is further disposed between the first data line and the second data line. The method of claim 3,
Further comprising an external dam disposed so as to surround a display region of the first substrate,
Wherein the external dam covers the data connection portion. 6. The method of claim 5,
The external dam
A first outer dam disposed on the interlayer insulating film and covering a side surface of the data connection portion; And
And a second outer dam disposed on the first outer dam. The method of claim 3,
Wherein the organic light emitting device includes a first anode electrode electrically connected to the thin film transistor,
And a second anode electrode spaced apart from the first anode electrode,
And the second anode electrode covers an end of the second data line. 6. The method of claim 5,
Further comprising an inner dam disposed to surround the display area of the first substrate and disposed inside the outer dam,
Wherein the internal dam covers an end of the second data line. 9. The method of claim 8,
The internal dam may include:
A first internal dam disposed on the data line and covering a side surface of the second data line; And
And a second inner dam disposed on the first inner dam. The method according to claim 1,
Wherein the data line includes:
An external data line provided on a surface of the data line, and an internal data line provided between the external data lines. The method according to claim 1,
The thin-
An active layer disposed on the first substrate;
And a source electrode and a drain electrode electrically connected to the active layer,
Wherein the data line is disposed in the same layer as the source electrode and the drain electrode.

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