KR20190061755A - Solar cell module - Google Patents

Abstract

The present invention relates to a solar cell module providing a neat appearance. According to one embodiment of the present invention, the solar cell module comprises: a plurality of solar cells individually including a semiconductor substrate, and a plurality of first and second electrodes lengthily formed on a surface of the semiconductor substrate in a first direction and having polarity different from each other; and a plurality of conductive lines connected to the first electrode of the first solar cell among the solar cells and the second electrode of the second solar cell adjacent to the first solar cell, and disposed in a second direction crossing the first direction to electrically connect the solar cells. Moreover, a line fixing part made of an insulation material is lengthily disposed in the first direction crossing the conductive lines between the outermost electrode, placed last among the plurality of first and second electrodes placed on a surface of the semiconductor substrate, and an end of the semiconductor substrate to fix an end of the conductive lines on the surface of the semiconductor substrate. Accordingly, a neat appearance of a module can be provided.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells have a semiconductor portion that forms a p-n junction by different conductive types, such as p-type and n-type, and electrodes connected to semiconductor portions of different conductivity types, respectively.

When light is incident on such a solar cell, a plurality of electron-hole pairs are generated in the semiconductor portion, and the generated electron-hole pairs are separated into electrons and holes, respectively, so that the electrons move toward the n- Type semiconductor portion. The transferred electrons and holes are collected by different electrodes connected to the n-type semiconductor portion and the p-type semiconductor portion, respectively, and electric power is obtained by connecting these electrodes with electric wires.

Such solar cells can be connected to each other by conductive wirings for mutual connection.

An object of the present invention is to provide a solar cell module.

A solar cell module according to an exemplary embodiment of the present invention includes a plurality of solar cells each having a semiconductor substrate and a plurality of first and second electrodes formed on the surface of the semiconductor substrate in a first direction and having different polarities; And a plurality of solar cells arranged in a second direction crossing the first direction and connected to a first electrode of the first solar cell and a second electrode of the second solar cell adjacent to the first solar cell among the plurality of solar cells, And a plurality of conductive wirings which are electrically connected to each other, wherein between the outermost electrodes of the plurality of first and second electrodes located on the surface of the semiconductor substrate and the end of the semiconductor substrate, And fixing the ends of the plurality of conductive wirings to the surface of the semiconductor substrate.

Here, the wiring fixing portion can cover the ends of a plurality of conductive wirings located on the semiconductor substrate.

The length of the wiring fixing portion may be larger than the distance between both outermost conductive wirings located at both ends of the plurality of conductive wirings and shorter than the length of the semiconductor substrate.

 Further, the line width of the wiring fixing portion may be smaller than the distance between the outermost electrode and the end of the semiconductor substrate, and the thickness of the wiring fixing portion may be between 10um and 100um.

The wiring fixing portion may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide (PI), polyolefin , EVA), acrylic, silicone, and epoxy.

More specifically, the wiring fixing portion may be formed of a single layer having a base layer, or may be formed of a plurality of layers including a base layer and an adhesive layer for adhering the base layer to the surface of the semiconductor substrate.

Here, the base layer of the wiring fixing portion may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide (PI), polyolefin ethylene-vinyl acetate, EVA).

In addition, the adhesive layer of the wiring fixing portion may be formed of any one of acrylic, silicon and epoxy.

A front transparent substrate disposed on a front surface of the plurality of solar cells; A rear substrate disposed on a rear surface of the plurality of solar cells; And a filling sheet disposed between the front transparent substrate and the plurality of solar cells and between the rear substrate and the plurality of solar cells, wherein the filling sheet includes ethylene-vinyl acetate (EVA) (ethylene-vinyl acetate) (EVA), and the EVA of the filling sheet and the EVA of the wiring fixing portion may have different contents of vinyl acetate.

For example, the EVA of the filling sheet is between 28 wt% and 32 wt% of vinyl acetate and the EVA of the EVA is less than 28 wt% or more than 32 wt% of vinyl acetate can do.

The first electrode is located on the front surface of the semiconductor substrate, the second electrode is located on the rear surface of the semiconductor substrate, and the wiring fixing portion includes a plurality of conductive wirings connected to the second electrode located on the rear surface of the semiconductor substrate The ends can be fixed.

Alternatively, in each of the plurality of solar cells, the first electrode and the second electrode are located on the rear surface of the semiconductor substrate, the plurality of conductive wirings include a first conductive wiring crossing the first electrode and electrically connected to each other, And the wiring fixing portion can fix at least any one of the first and second conductive wirings to the conductive wiring end.

The solar cell module according to the present invention is provided with the wiring fixing part 400 made of an insulating material so that the position of the end of the conductive wiring is not shaken so that the appearance of the module can be made more clear.

1 is a schematic exploded perspective view illustrating a solar cell module according to an exemplary embodiment of the present invention.
FIG. 2 is a view for explaining an example of a connection structure of a plurality of solar cells shown in FIG. 1;
3 is a view for explaining an example of the structure of each solar cell.
4 is a view for explaining an example of a wiring fixing part 400 in a solar cell module according to an example of the present invention.
5 is a view illustrating a structure of a solar cell module in a laminated state according to an exemplary embodiment of the present invention.
6 is a view for explaining the layer structure of the wiring fixing part 400 according to an example of the present invention.
7 is a view for explaining an example of a solar cell structure according to another example of the present invention.
8 is a view for explaining an example in which a plurality of conductive wirings 200 are connected to the solar cell shown in Fig. 7, and wiring fixing portions 400 made of an insulating material are formed at the ends of the respective conductive wirings 200. Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Hereinafter, the front surface may be a surface of the semiconductor substrate 110 on which the direct light is incident, and the rear surface may be an opposite surface of the semiconductor substrate 110 on which the direct light is not incident, have.

In the following description, the meaning of two different components having the same length or width means that they are equal to each other within an error range of 10%.

In the following drawings, duplicate explanations of the same portions will be omitted.

Hereinafter, a solar cell module according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a schematic exploded perspective view illustrating a solar cell module according to an exemplary embodiment of the present invention.

The solar cell module according to the present invention may include a front transparent substrate 40, a first filling sheet 30a, a plurality of solar cells, a second filling sheet 30b, and a rear substrate 50.

The front transparent substrate 40 may be made of tempered glass having high transmittance and excellent breakage prevention function. For example, the tempered glass may be a low iron tempered glass with a low iron content.

Each of the plurality of solar cells has a function of converting incident solar energy into electric energy, and may include a semiconductor substrate 110 doped with an impurity and various functional layers and electrodes.

The rear substrate 50 can prevent the penetration of moisture from the rear surface of the solar cells, thereby protecting the solar cells from the external environment.

The rear substrate 50 may be disposed on the rear surface of the front transparent substrate 40 so as to face the front transparent substrate 40 with the solar cells disposed therebetween.

Such a rear substrate 50 may be in the form of a sheet or a glass substrate and may have a multilayer structure such as a layer preventing water and oxygen penetration, a layer preventing chemical corrosion, and a layer having an insulating property.

The filling sheet 30 includes a first filling sheet 30a positioned between the front transparent substrate 40 and the plurality of solar cells and a second filling sheet 30b positioned between the plurality of solar cells and the rear substrate .

Such a filling sheet 30 can prevent corrosion due to moisture penetration and protect the solar cell from impact. The filling sheet 30 may be made of a material such as EVA (ethylene vinyl acetate).

In addition, the filling sheet 30 is integrated with the solar cells by being laminated on the upper and lower portions of the solar cells, filled in the spaces between the solar cells, and can be hardened through the heat treatment .

The structure of each of the plurality of solar cells in the solar cell module and the connection structure in which a plurality of solar cells are connected will be described in more detail as follows.

FIG. 2 is a view for explaining an example of a connection structure of a plurality of solar cells shown in FIG. 1, and FIG. 3 is a view for explaining an example of the structure of each solar cell.

2 (a) shows a planar structure in which a plurality of solar cells are connected by a plurality of conductive wirings 200, and FIG. 2 (b) And FIG. 2C is a cross-sectional view taken along the line CS2-CS2 in FIG. 2A.

As shown in FIGS. 2 and 3, each of the plurality of solar cells has a plurality of first electrodes 140 extending in a first direction (x) on the front surface of the semiconductor substrate 110 and the semiconductor substrate 110 , And a second electrode (150) on the rear surface of the semiconductor substrate (110).

Such a plurality of solar cells C1 and C2 are arranged in a second direction y that intersects the first direction x and are arranged adjacent to each other in the second direction y, The first and second solar cells C1 and C2 may be included.

The plurality of conductive wirings 200 are extended in the second direction y to extend to the first electrode 140 of the first solar cell C1 and the second electrode 150 of the second solar cell C2 Respectively. Accordingly, the first and second solar cells C1 and C2 adjacent to each other in the second direction y can form a string with the plurality of conductive wirings 200. [

The conductive wiring 200 may have a circular or elliptical shape in cross section and may have a long length.

At this time, the number N200 of the plurality of conductive wirings 200 may be 6 to 33 based on one surface of the solar cell. In addition, the width W200 of each of the plurality of conductive wirings 200 may be between 250 um and 500 um.

For example, when the line width W200 of the conductive line 200 is 250um or more and less than 300um, the number N200 of the conductive lines 200 may be 15 to 33.

The number N 200 of the conductive wirings 200 may be 10 to 15 when the line width W 200 of the conductive wirings 200 is less than 300 μm and less than 350 μm and the line width W 200 of the conductive wirings 200 is The number N 200 of the conductive wirings 200 may be 8 to 10 when the line width W 200 of the conductive wirings 200 is 400um to 500um when the number of the conductive wirings 200 is 350um or more and less than 400um, (N200) may be six to eight.

The number N200 of the conductive wirings 200 is arranged differently according to the line width W200 of the conductive wirings 200 so that the total shading shaded by the conductive wirings 200 on the light receiving surface of the solar cell The self-resistance of the conductive wiring 200 can be appropriately adjusted while the area is not increased, whereby the output reduced by the conductive wiring 200 can be minimized and the output of the solar cell module can be further improved .

The relationship of the number of the conductive wirings 200 according to the line width W200 described above is only one example optimized, and the present invention is not necessarily limited thereto.

The pitch between two conductive wirings 200 adjacent to each other may be between 4.75 mm and 25.13 mm in consideration of the line width W200 of the conductive wirings 200 and the number of wirings.

3, each of the plurality of solar cells includes a semiconductor substrate 110, a first conductive type region 120, an anti-reflection film 130, a first electrode 140, a second conductive type region 172, a rear protective layer 180, and a second electrode 150. [

The semiconductor substrate 110 may contain an impurity of the first conductivity type or the second conductivity type. For example, p-type or n-type conductivity type impurities may be contained.

The semiconductor substrate 110 may be formed of any one of single crystal silicon, polycrystalline silicon, and amorphous silicon. In one example, the semiconductor substrate 110 may be formed of a crystalline silicon wafer.

Specifically, when the semiconductor substrate 110 has a p-type conductivity type, impurity of a boron-doped element such as gallium, indium, or the like can be doped into the semiconductor substrate 110.

However, when the semiconductor substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb), etc. may be doped into the semiconductor substrate 110 .

The front surface of the semiconductor substrate 110 has a plurality of uneven surfaces. 3, only the edge portion of the semiconductor substrate 110 is shown as an uneven surface, but substantially the entire front surface of the semiconductor substrate 110 has an uneven surface, The conductive type region 120 and the antireflection film 130 may also have uneven surfaces.

The first conductive type region 120 may include any one of impurities of the first and second conductive types as shown in FIG. 3, and may be formed on the entire surface of the semiconductor substrate 110, which is an incident surface.

For example, the first conductive type region 120 may include impurities opposite to the impurities contained in the semiconductor substrate 110 and may be formed by containing thermal diffusion. The first conductive type region 120 may function as an emitter, Junction can be achieved.

Conversely, the first conductive type region 120 may contain impurities similar to impurities contained in the semiconductor substrate 110 at a higher concentration than the semiconductor substrate 110, and may serve as a rear electric field portion.

Hereinafter, a case where the first conductive type region 120 serves as an emitter portion and a second conductive type region 172 serves as a rear electric portion will be described as an example. However, the present invention is not limited thereto.

The first conductive type region 120 forms a pn junction with the first conductive type portion of the semiconductor substrate 110, that is, the first conductive type portion of the semiconductor substrate 110. Thus, unlike the present embodiment, Type, the first conductivity type region 120 may have a p-type conductivity type. In this case, the separated electrons may move toward the back surface of the semiconductor substrate 110, and the separated holes may move toward the first conductivity type region 120.

When the first conductivity type region 120 has an n-type conductivity type, the first conductivity type region 120 may be formed by doping an impurity of a pentavalent element into the semiconductor substrate 110, In the case of the conductive type, the impurity of the trivalent element may be doped into the semiconductor substrate 110.

The antireflection film 130 is located on the incident surface of the semiconductor substrate 110 and the first conductive type region 120 is positioned on the incident surface of the semiconductor substrate 110 as shown in FIGS. The antireflective film 130 may be located on the first conductive type region 120. In this case,

The antireflection film 130 may be formed of a dielectric material and may include at least one of a hydrogenated silicon nitride film (SiNx: H), a hydrogenated silicon oxide film (SiOx: H) and a hydrogenated silicon nitride oxide film (SiNxOy: H) Either one may be formed of a plurality of layers.

By doing so, the passivation function of the antireflection film 130 can be further enhanced, and the photoelectric efficiency of the solar cell can be further improved.

3, the plurality of first electrodes 140 are disposed on the front surface of the semiconductor substrate 110 and spaced apart from each other on the front surface of the semiconductor substrate 110, You can stretch it long.

However, the pattern of the first electrode 140 is merely an example, and is not necessarily limited to this. In some cases, the first electrode 140 is formed in a direction crossing the first electrode 140 extended in the first direction x And a connection electrode 141 connecting the plurality of first electrodes 140 to each other.

At this time, the plurality of first electrodes 140 may be electrically connected to the first conductivity type region 120 through the anti-reflection film 130.

Accordingly, the plurality of first electrodes 140 may be made of at least one conductive material, such as silver (Ag), to collect electrons, for example electrons, moving toward the first conductivity type region 120.

Each of the plurality of first electrodes 140 may include a first portion P1 which is overlapped with the plurality of conductive wirings 200 and intersected at an intersection.

3, the first electrodes 140 are not formed at the intersections of the plurality of conductive wirings 200, and each of the first electrodes 140 extends in the first direction x, 1 conductive type region 120 may include a first portion P1 covered with an antireflection film 130. [

The plurality of conductive wirings 200 may be disposed on the first portion 140 of the plurality of first electrodes 140 in a state of being overlapped with the first portions P1 of the plurality of first electrodes 140, As shown in Fig.

However, the first electrode 140 extending in the first direction (x) does not break at the intersection where the first electrode 140 overlaps with the conductive wiring 200, and in some cases, at the intersection where the conductive wiring 200 overlaps and intersects with the conductive wiring 200 The first electrode 140 may be formed to be connected in a long direction in the first direction x.

The second conductive type region 172 may be located on the rear surface opposite to the front surface of the semiconductor substrate 110 and may contain an impurity opposite to the impurity contained in the first conductive type region 120. In one example, the second conductivity type region 172 may serve as a backside electrical portion.

The second conductive type region 172 may be formed in a plurality of lines spaced apart in the second direction y by forming a second conductive type region 172 in the first direction x, . Thus, the second conductivity type region 172 can be comprised of a plurality of back electromechanical lines 172.

A potential barrier is formed due to a difference in impurity concentration between the first conductive region and the second conductive type region 172 of the semiconductor substrate 110. As a result, electrons are injected toward the second conductive type region 172, It is possible to facilitate the movement of holes toward the second conductivity type region 172 while preventing movement of the second conductivity type region 172. [

Therefore, it is possible to reduce the amount of charge lost due to the recombination of electrons and holes at the back surface and the vicinity of the semiconductor substrate 110 and to accelerate the movement of a desired charge (e.g., a hole) .

The backside passivation layer 180 may be formed to cover the entire rear surface of the semiconductor substrate 110 except for the portion where the second electrode 150 is formed and may perform a passivation function and an insulation function for the rear surface of the semiconductor substrate 110 have. At least one of the silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiNxOy) may be formed of at least one layer.

The second electrode 150 is formed in parallel with the first direction x on the rear surface opposite to the first surface of the semiconductor substrate 110 and extends in the second direction y intersecting the first direction x. And can be formed spaced apart. However, the pattern of the second electrode 150 is merely an example and is not necessarily limited thereto.

The second electrode 150 may be electrically connected to the second conductive type region 172 to collect charge, for example, holes moving from the second conductive type region 172 .

Since the second electrode 150 is in contact with the second conductive type region 172 that maintains the impurity concentration higher than that of the semiconductor substrate 110, the second conductive type region 172 and the second electrode 150 are in contact with each other, The charge transfer efficiency from the semiconductor substrate 110 to the second electrode 150 can be improved.

The conductive wire 200 is connected to the second electrode 150 so that the charges collected in the second electrode 150 can be transmitted to other adjacent solar cells through the conductive wire 200 .

Such a second electrode 150 may comprise a metal material having good conductivity and may contain at least one conductive material, for example, silver (Ag).

The solar cell module may further include a wire fixing part 400 of an insulating material for fixing the positions of the ends of the plurality of conductive wires 200.

This will be described in more detail with reference to FIG.

FIG. 4 is a view for explaining an example of a wiring fixing part 400 in a solar cell module according to an example of the present invention, and FIG. 5 is a view for explaining a structure in a lamination state of a solar cell module according to an example of the present invention. .

4 (a) shows a configuration in which a plurality of conductive wirings 200 are connected to the rear surface of a semiconductor substrate 110 on which the second electrode 150 is formed, and Fig. 4 (b) Sectional view in the first direction x of the end portion of the conductive wiring 200 shown in Fig. 4A and Fig. 4C is a cross-sectional view of the conductive wiring 200 shown in Fig. (Y) cross section of the end portion.

4, the solar cell module according to the present invention may include a wiring fixing part 400 of an insulating material for fixing the ends of a plurality of conductive wirings 200 to the surface of the semiconductor substrate 110 .

The wiring fixing part 400 is positioned between the last outermost electrode of the plurality of first and second electrodes 140 and 150 located on the surface of the semiconductor substrate 110 and the end of the semiconductor substrate 110, (X) intersecting the plurality of conductive wirings (200).

For example, the wiring fixing portion 400 may be located on the rear surface of the semiconductor substrate 110 where the second electrode 150 is located, as shown in FIG. 4 (a). However, the wiring fixing portion 400 of the present invention is not necessarily located on the back surface of the semiconductor substrate 110, but may be located on the front surface.

Here, the outermost electrode may be an electrode located at the outermost end of the first and second electrodes 140 and 150.

4 (a), when the wiring fixing portion 400 is located on the rear surface of the semiconductor substrate 110 on which the plurality of second electrodes 150 are located, the plurality of second electrodes 150 (X) intersecting the plurality of conductive wirings 200 between the outermost second electrode 150e located at the outermost edge and the end of the semiconductor substrate 110. In this case,

The ends of the semiconductor substrate 110 are connected to the ends 110S1 and 110S2 extending in the first direction x in parallel with the direction intersecting the plurality of the conductive wires 200, May be referred to as an end 110S1 located at the end of the first side 110S1.

4A, the ends 100S1 and 100S2 of the ends 100S1 and 100S2 of the semiconductor substrate 110, which are elongated in the first direction x, are positioned adjacent to the ends of the plurality of the conductive wires 200 It can mean.

The length L400 of the wiring fixing portion 400 in the first direction x is equal to the length L400 of the outermost conductive wiring 200 located at the both ends of the plurality of conductive wirings 200 connected to the rear surface of the semiconductor substrate 110 And may be shorter than the length of the semiconductor substrate 110 in the first direction (x).

The line width W400 in the second direction y of the wiring fixing part 400 may be smaller than the distance between the outermost second electrode 150e and the end of the semiconductor substrate 110. [

By thus limiting the length and width of the wiring fixing portion 400, the step of adhering the wiring fixing portion 400 to the surface of the semiconductor substrate 110 can be simplified and simplified.

4 (b) and 4 (c), the wiring fixing portion 400 may cover the ends of the plurality of conductive wirings 200 located on the semiconductor substrate 110. [

Accordingly, the position of the end of the conductive wiring 200 is not shaken, so that the appearance of the module can be made more clear and the plurality of conductive wirings 200 can be made more clean, The alignment of the conductive wirings 200 is not shaken by fixing one end of the conductive wirings 200 when the wirings are electrically connected to the surface of the semiconductor substrate 110, thereby making it easier to manufacture the module.

The wiring fixing portion 400 may be formed of a material such as polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide (PI), polyolefin ethylene-vinyl acetate (EVA), acrylic, silicone, and epoxy.

Here, when the wiring fixing part 400 is formed to include the EVA, the EVA of the filling sheet and the EVA of the wiring fixing part 400 may be formed so that the content ratio of vinyl acetate is different from each other.

5, a plurality of solar cells are disposed between the first filling sheet 30a located on the rear surface of the front transparent substrate 40 and the second filling sheet 30b located on the front surface of the rear substrate They can be laminated and thermocompressed.

In such a case, both the filling sheet and the wire fixing portion 400 may include ethylene-vinyl acetate (EVA).

In such a case, the EVA included in the wiring fixing part 400 of the present invention may be distinguished from the EVA of the filling sheet 30 by forming a different ratio of vinyl acetate to EVA.

For example, the EVA of the filler sheet 30 may be formed with a content ratio of vinyl acetate between 28 wt% and 32 wt%, and EVA of the wire fixing part 400 according to the present invention may be formed of vinyl acetate ) May be less than 28 wt% or more than 32 wt%.

The melting point of the wiring fixing portion 400 may be higher or lower than the melting point of the filling sheet 30 because the content ratio of the vinyl acetate is different.

Hereinafter, the structure of the insulating interconnection securing part 400 will be described in more detail.

6 is a view for explaining the layer structure of the wiring fixing part 400 according to an example of the present invention.

6 (a), the wiring fixing portion 400 according to the exemplary embodiment of the present invention may be formed as a single layer having only the base layer 400a, as shown in FIG. 6 (b) And an adhesive layer 400b for adhering the base layer 400a and the base layer 400a to the surface of the semiconductor substrate 110. [

 The base layer 400a of the wire fixing part 400 is formed of a material such as polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide (PI), polyolefin ) Or ethylene-vinyl acetate (EVA).

In addition, the adhesive layer 400b of the wiring fixing part 400 may include any one of acrylic, silicon, and epoxy.

6 (a), when the wiring fixing portion 400 is formed as a single layer including only the base layer 400a, the thickness of the wiring fixing portion 400 is set to be between 10um and 70um .

6 (b), the wiring fixing portion 400 is provided with an adhesive layer 400b for adhering the base layer 400a and the base layer 400a to the surface of the semiconductor substrate 110 The total thickness of the wiring fixing portions 400 can be set to be between 60 [mu] m and 100 [mu] m.

The thickness of the base layer 400a may be in the range of 10um to 70um and the thickness of the adhesive layer 400b may be in the range of 20um to 90um within the range where the total thickness of the wire fixing portion 400 is between 60um and 100um. have.

As described above, when the wiring fixing portion 400 includes the adhesive layer 400b, the wiring fixing portion 400 is adhered to the surface of the semiconductor substrate 110 so as to cover the ends of the plurality of wiring, It is possible to fix the end of the wiring fixing part 200. When the wiring fixing part 400 is misaligned, the wiring fixing part 400 can be detached and reattached, thereby making it easier to manufacture the module.

The wiring fixing portion 400 according to the present invention is applied to a conventional solar cell module having the first electrode 140 on the front surface of the semiconductor substrate 110 and the second electrode 150 on the rear surface thereof The wiring fixing part 400 is not necessarily applied to such a conventional solar cell module but may be applied to the case where the first and second electrodes 140 and 150 are provided on the rear surface of the semiconductor substrate 110 It is possible to apply it to the case. Hereinafter, this will be described in more detail.

FIG. 7 is a view for explaining an example of a solar cell structure according to another example of the present invention. FIG. 8 is a sectional view of a solar cell shown in FIG. 7, in which a plurality of conductive wirings 200 are connected, In which a wiring fixing part 400 made of an insulating material is formed at an end of a wiring board 400. FIG.

In the following description of FIG. 7, the description of the contents overlapping with those described in FIG. 3 is omitted and the other parts are mainly described.

7, another example of the solar cell according to the present invention includes an antireflection film 130, a semiconductor substrate 110, a control passivation film 180, a first conductive type region 120 ' Type semiconductor region 155, a passivation layer 190, a plurality of first electrodes 140 ', and a plurality of second electrodes 150'.

Here, the antireflection film 130, the control passivation film 180, and the passivation layer 190 may be omitted. However, since the efficiency of the solar cell is improved, the following description will be made.

The semiconductor substrate 110 is the same as that described in FIG. 3, and a detailed description thereof will be omitted.

The control passivation film 180 is disposed in direct contact with the entire rear surface of the semiconductor substrate 110 and may include a dielectric material.

The control passivation layer 180 may pass carriers generated in the semiconductor substrate 110 and passivate the back surface of the semiconductor substrate 110.

In addition, the control passivation film 180 may be formed of a dielectric material formed of SiCx or SiOx having high durability even at a high temperature process of 600 ° C or more.

The first conductive type region 120 'may be disposed on the rear side of the semiconductor substrate 110, as shown in FIG. 7, for example, in direct contact with a portion of the rear side of the control passivation film 180 .

In addition, the first conductive type region 120 'may be formed on the rear surface of the semiconductor substrate 110 in a first direction (x), and may be formed of a polycrystalline silicon material.

Here, the first conductive type region 120 'may contain impurities of any one of the first and second conductive type impurities.

The second conductive type region 172 'may be extended on the rear surface of the semiconductor substrate 110 in a first direction x parallel to the first conductive type region 120'.

In one example, the second conductive type region 172 'may be formed in direct contact with a portion of the rear surface of the control passivation film 180 that is spaced apart from each of the first conductive type regions 120' described above.

The second conductive type region 172 'may contain an impurity opposite to the impurity contained in the first conductive type region 120', and may be formed of a polycrystalline silicon material.

The intrinsic semiconductor part 155 may be formed on the rear surface of the control passivation film 180 exposed between the first conductive type region 120 'and the second conductive type region 172', as shown in FIG. have.

Unlike the first conductive type region 120 'and the second conductive type region 172', the intrinsic semiconductor portion 155 may include an impurity of the first conductive type or an intrinsic polycrystalline silicon of which the impurity of the second conductive type is not doped Layer.

7, each of both side surfaces of the intrinsic semiconductor part 155 has a structure in which the side surfaces of the first conductive type region 120 'and the side surfaces of the second conductive type region 172' are in direct contact with each other .

The passivation layer 190 is formed on the rear surface of the polycrystalline silicon layer formed on the first conductive type region 120 ', the second conductive type region 172', and the intrinsic semiconductor portion 155, and a dangling bond To prevent the carriers generated from the semiconductor substrate 110 from being recombined by the dangling bonds and disappearing.

The plurality of first electrodes 140 'may be connected to the first conductivity type region 120' and extend in the first direction x.

The plurality of second electrodes 150 'may be connected to the second conductivity type region 172' and extend in the first direction x in parallel with the first electrode 140 '.

As shown in FIG. 1, the first electrode 140 'and the second electrode 150' may be alternately arranged in the second direction (y).

The solar cell applied to the solar cell module according to the present invention is not necessarily limited to FIG. 7, and the first electrode 140 'and the second electrode 150' provided in the solar cell may be formed only on the rear surface of the semiconductor substrate 110 But other components can be changed at any time.

For example, in the solar cell module of the present invention, a part of the first electrode 140 'and the first conductive type region 120' are located on the front surface of the semiconductor substrate 110, and a part of the first electrode 140 ' An MWT type solar cell connected to the remaining part of the first electrode 140 'formed on the rear surface of the semiconductor substrate 110 through a hole formed in the semiconductor substrate 110 is also applicable.

As shown in FIG. 8, a plurality of conductive wirings 200 may be connected to the rear surface of the solar cell shown in FIG. 7. The plurality of conductive wirings 200 may include a first electrode 140 ' And a second conductive wiring 200 electrically connected to the second electrode 150 '. The first conductive wiring 210 is electrically connected to the second electrode 150'.

Here, the plurality of first and second conductive wirings 210 and 220 are arranged in a second direction y that is a direction intersecting the first direction x, which is the longitudinal direction of the first and second electrodes 140 'and 150' It can be extended and arranged.

The plurality of first conductive wirings 210 are connected to the plurality of first electrodes 140 'through a first conductive adhesive agent 251 made of a conductive material, And may be insulated from the two electrodes 150 '.

The plurality of second conductive wirings 220 are connected to the plurality of second electrodes 150 'through the first conductive adhesive agent 251 and the plurality of first electrodes 140' are formed by the insulating layer 252. As shown in FIG.

The first and second conductive wirings 210 and 220 are made of a conductive metal and include a conductive core containing any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) And a conductive coating layer including an alloy containing tin (Sn) or tin (Sn) and coating the surface of the core (CR).

One end of each end of the first conductive wiring 210 connected to the first electrode 140 'is located on the first edge region of the rear surface of the semiconductor substrate 110 and the other end is positioned on the projection of the semiconductor substrate 110 And may protrude out of the second edge region of the semiconductor substrate 110. [

One end of each of the two ends of the second conductive wiring 220 is located on the second electrode 150 'on the second edge region of the rear surface of the semiconductor substrate 110 and the other end is positioned outside the projection region of the semiconductor substrate 110 And may protrude beyond the first edge region of the semiconductor substrate 110.

Here, the wiring fixing part 400 may fix at least one end of the conductive wiring 200 of the first and second conductive wiring 200.

8, the wiring fixing portion 400 is located at a first edge region of the semiconductor substrate 110 in a first direction (x), and is electrically connected to one end of the first conductive wiring 200 And the other wiring fixing portion 400 may be positioned in the second edge region of the semiconductor substrate 110 in the first direction x so as to be in contact with the first edge region of the semiconductor substrate 110 And can be adhered to the second edge region of the semiconductor substrate 110 while covering one end of the second conductive wiring 200.

Accordingly, the position of the ends of the first and second conductive wirings 200 is not shaken, and the external appearance of the module can be made more clear, The first and second conductive wirings 200 may be arranged so that the alignment of the first and second conductive wirings 200 is not shaken by fixing one end of the conductive wirings 200 when the first and second conductive wirings 200 are electrically connected to the surface of the semiconductor substrate 110 Thereby making it easier to manufacture the module.

In addition, the above-described embodiments are not necessarily independently applied to each other, and the contents described in each embodiment may be combined and applied to each other so long as they are not contradictory or contradictory to each other.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

Claims (13)

A plurality of solar cells each having a semiconductor substrate, a plurality of first and second electrodes formed on the surface of the semiconductor substrate in a first direction and having different polarities; And
A first electrode of the first solar cell and a second electrode of a second solar cell adjacent to the first solar cell among the plurality of solar cells and connected to a second electrode of the second solar cell arranged in a second direction crossing the first direction, And a plurality of conductive wirings for electrically connecting the solar cells,
A plurality of conductive lines arranged in a first direction intersecting the plurality of conductive wirings between an outermost electrode positioned last among the plurality of first and second electrodes positioned on a surface of the semiconductor substrate and an end of the semiconductor substrate, And a wiring fixing portion of an insulating material for fixing an end of the conductive wiring to the surface of the semiconductor substrate. The method according to claim 1,
Wherein the wiring fixing portion covers an end of the plurality of conductive wirings located on the semiconductor substrate. The method according to claim 1,
Wherein a length of the wiring fixing portion is larger than an interval between both outermost conductive wirings located at both ends of the plurality of conductive wirings and shorter than a length of the semiconductor substrate. The method according to claim 1,
Wherein a line width of the wiring fixing portion is smaller than an interval between the outermost electrode and an end of the semiconductor substrate. The method according to claim 1,
And the thickness of the wiring fixing portion is between 10 [mu] m and 100 [mu] m. The method according to claim 1,
The wiring fixing part may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide (PI), polyolefin (PO), ethylene- EVA), acrylic, silicon, and epoxy. The method according to claim 1,
Wherein the wiring fixing portion is formed of a single layer having a base layer or formed of a plurality of layers including the base layer and an adhesive layer for adhering the base layer to the surface of the semiconductor substrate. 8. The method of claim 7,
The base layer of the wiring fixing portion may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), low density polyethylene (LDPE), high density polyethylene (HDPE), polyimide, polyimide, polyolefin -vinyl acetate, EVA). < / RTI > 8. The method of claim 7,
Wherein the adhesive layer of the wiring fixing portion is formed of any one of acrylic, silicon, and epoxy. The method according to claim 1,
A front transparent substrate disposed on a front surface of the plurality of solar cells;
A rear substrate disposed on a rear surface of the plurality of solar cells; And
And a filling sheet disposed between the front transparent substrate and the plurality of solar cells and between the rear substrate and the plurality of solar cells,
The filling sheet comprises ethylene-vinyl acetate (EVA)
The wiring fixing part includes an ethylene-vinyl acetate (EVA)
The EVA of the filling sheet and the EVA of the wiring fixing part are different in the content ratio of vinyl acetate. 11. The method of claim 10,
The EVA of the filling sheet has a content ratio of vinyl acetate between 28 wt% and 32 wt%
Wherein a ratio of vinyl acetate in the EVA of the wiring fixing portion is less than 28 wt% or more than 32 wt%. The method according to claim 1,
Wherein the first electrode is located on the front surface of the semiconductor substrate and the second electrode is located on the rear surface of the semiconductor substrate in each of the plurality of solar cells,
Wherein the wiring fixing portion fixes ends of a plurality of conductive wirings connected to the second electrode located on the rear surface of the semiconductor substrate. The method according to claim 1,
Wherein the first electrode and the second electrode are located on a rear surface of the semiconductor substrate in each of the plurality of solar cells,
Wherein the plurality of conductive wirings include first conductive wirings crossing and electrically connecting to the first electrodes and second conductive wirings crossing and electrically connecting to the second electrodes,
Wherein the wiring fixing portion fixes the conductive wiring end of at least one of the first and second conductive wirings.

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