KR20190060287A - Method of trasferring micro-device array - Google Patents

Abstract

One embodiment of the present invention is to provide a micro device array transfer method capable of stably separating a micro device from a source substrate and stably transferring the micro device to a target substrate to improve the yield of a process. The micro device array transfer method comprises: preparing a carrier film including a base film, an adhesive layer, and a non-conductive layer; pressing the non-conductive layer to a micro device side; separating the micro device from the source substrate and transferring the micro device to the non-conductive layer; attaching a transfer film to the micro device; removing the adhesive layer and the base film from the non-conductive layer; placing and temporarily fixing a conductive material between a first electrode provided on the micro device and a second electrode provided on an upper surface of the target substrate; and bonding the first electrode and second electrode to the conductive material.

Description

METHOD OF TRASFERING MICRO-DEVICE ARRAY [0002]

The present invention relates to a method of transferring a micro element array, and more particularly, to a micro element array transfer method capable of stably separating a micro element from a source substrate and transferring the micro element to a target substrate in a stable manner, ≪ / RTI >

Display using micro devices such as LED is attracting attention as a next-generation advanced display to replace conventional displays. In order to make such a display, the technology of transferring each LED element to a modular circuit board is the key.

In the case of a thin device having a micro / nano size, since the device is broken due to the pressure generated in the vacuum chuck, the device having a large size and a large thickness can be transferred using a vacuum chuck, It was difficult to use a vacuum chuck.

Alternatively, there is a method of transferring an element using an electrostatic chuck technique. However, when the element is applied to a thin element, the element is damaged by static electricity, and the transfer ability is lowered .

For the above reasons, a technique of continuously transferring thin film type thin film devices using adhesive force acting on micro / nano scale is widely used.

Generally, in a method of transferring micro devices by using adhesive force, a micro device arranged on a source substrate is adhered to a carrier film and adhered to a solder coated on an electrode of a target substrate, thereby transferring the micro device to a target substrate.

On the other hand, various methods have been used to adhere the micro devices arranged on the source substrate to the carrier film, but it is not easy to stably separate the micro devices from the source substrate and adhere them to the carrier film. Such a problem causes a reduction in the yield of the process, and therefore, improvement is required.

Korean Patent Laid-Open Publication No. 2017-0011770 (published Feb. 02, 2017)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a micro device array capable of stably isolating a micro device from a source substrate and stably transferring the micro device to a target substrate, Thereby providing a transfer method.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise form disclosed. There will be.

According to an aspect of the present invention, there is provided a semiconductor device comprising a base film, an adhesive layer provided on an upper surface of the base film, and a carrier film having a carrier film including a non- Preparing step; A nonconductive layer pressing step of disposing the carrier film so as to face the upper portion of the source substrate and pressing the nonconductive layer to a plurality of micro devices formed on the source substrate; Peeling the micro device from the source substrate and transferring the micro device to the nonconductive layer; Attaching a transfer film to a lower surface of the micro device; An adhesive layer and a base film removing the base film together with the adhesive layer from the nonconductive layer; A temporary fixing step of disposing the nonconductive layer facing the top of the target substrate and positioning and fixing the conductive material between the first electrode provided on the micro device and the second electrode provided on the upper surface of the target substrate; And a bonding step of bonding the first electrode and the second electrode to the conductive material by applying heat to the nonconductive layer and the conductive material.

In the embodiment of the present invention, the bonding step may include a conductive material pressing step of simultaneously pressing the microelectrode while applying heat to the nonconductive layer, thereby causing the conductive material to be pressed by the first electrode and the second electrode And a reflow step of applying heat to the conductive material to cure the conductive material.

In an embodiment of the present invention, the bonding step includes a transfer film removing step for removing the transfer film from the micro device between the conductive material pressing step and the reflow step, or after the reflow step .

In the embodiment of the present invention, in the temporary fixing step, the conductive material may be provided on the first electrode, or may be provided on the second electrode.

In the embodiment of the present invention, in the micro-element stripping step, only the micro-elements to be transferred to the target substrate among the plurality of micro-elements formed on the source substrate may be selectively removed from the source substrate.

In the embodiment of the present invention, in the carrier film forming step, the nonconductive layer may be provided only at the portion corresponding to the micro device to be peeled off from the source substrate.

According to another aspect of the present invention, there is provided a non-conductive layer forming method comprising: forming a non-conductive layer on a plurality of micro elements formed on an upper surface of a source substrate; A temporary fixing step of disposing and fixing the conductive material between the first electrode provided on the micro device and the second electrode provided on the upper surface of the target substrate by disposing the non-conductive layer facing the top of the target substrate; And a bonding step of bonding the first electrode and the second electrode to the conductive material by applying heat to the nonconductive layer and the conductive material.

In the embodiment of the present invention, the bonding step may include a conductive material pressing step of simultaneously pressing the microelectrode while applying heat to the nonconductive layer, thereby causing the conductive material to be pressed by the first electrode and the second electrode And a reflow step of curing the conductive material by applying heat to the conductive material. The micro-elements may be peeled off from the source substrate.

In the embodiment of the present invention, in the temporary fixing step, the conductive material may be provided on the first electrode, or may be provided on the second electrode.

In the embodiment of the present invention, in the nonconductive layer forming step, the nonconductive layer may be provided only on the source substrate corresponding to the micro device to be peeled off.

According to the embodiment of the present invention, since the micro devices arranged on the source substrate are transferred to the non-conductive layer, the adhesive force between the micro device and the non-conductive layer is maintained, It is possible to prevent breakage of the battery. In addition, the microdevice can be easily peeled off from the source substrate due to a sufficient adhesion force between the microdevice and the nonconductive layer after the laser peeling process. In addition, when a step of transferring the micro device to the transfer film is added, the adhesive force of the adhesive layer is weakened after the transfer process, so that only the non-conductive layer can easily remain in the micro device.

According to embodiments of the present invention, the non-conductive layer can secure a conductive material between the target substrate and the micro-device, so that the micro-device and the target substrate are electrically and mechanically connected firmly. In addition, adhesion reliability and product durability of the micro device substrate manufactured through the micro element array transfer method can be improved.

It should be understood that the effects of the present invention are not limited to the effects described above, but include all effects that can be deduced from the description of the invention or the composition of the invention set forth in the claims.

1 and 2 are flowcharts illustrating a method of transferring a micro element array according to a first embodiment of the present invention.
FIG. 3 is a view showing an example of a process of a micro element array transfer method according to the first embodiment of the present invention.
FIGS. 4 and 5 are views illustrating a case where a selective transfer process is performed in the micro element array transfer method according to the first embodiment of the present invention.
6 and 7 are flowcharts illustrating a method of transferring a micro element array according to a second embodiment of the present invention.
8 is a view illustrating an example of a process of a micro element array transfer method according to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" (connected, connected, coupled) with another part, it is not only the case where it is "directly connected" "Is included. Also, when an element is referred to as " comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 and FIG. 2 are flowcharts showing a method of transferring a micro element array according to a first embodiment of the present invention, and FIG. 3 is an exemplary view showing a process of a micro element array transfer method according to the first embodiment of the present invention.

As shown in FIGS. 1 to 3, the micro element array transfer method includes a carrier film forming step S110, a nonconductive layer pressing step S120, a micro element stripping step S130, a transfer film attaching step S140, And a base film removing step S150, a temporary fixing step S160, and a bonding step S170.

The carrier film preparation step S110 includes a base film 211, an adhesive layer 212 provided on the upper surface of the base film 211, and a carrier layer 213 provided on the upper surface of the adhesive layer 212 And a step of providing a film 210.

The non-conductive layer 213 may be formed by bonding a non-conductive film (NCF) to the adhesive layer 212 or by applying a non-conductive paste (NCP) to the adhesive layer 212 It is possible. In the case of forming the nonconductive layer 213 with a nonconductive paste, methods such as spin coating and bar coating may be used.

In the nonconductive layer pressurizing step S120, the carrier film 210 is disposed to face the upper portion of the source substrate 220, and the nonconductive layer 213 is disposed on the upper surface of the source substrate 220, To the element 230 side.

The source substrate 220 may be a donor substrate or a sapphire substrate on which the micro devices 230 are formed and a plurality of micro devices 230 may be provided on the source substrate 220 . The micro device 230 may be, for example, a micro LED, but is not limited thereto.

In addition, the micro device 230 may have a first electrode 231 at an upper portion thereof.

Hereinafter, for the sake of convenience, the conductive material 240 is provided on the upper surface of the first electrode 231. FIG. The conductive material 240 may be a conductive paste such as a solder paste, a silver paste or the like, or may be a metal thin film such as a solder thin film, a tin alloy thin film, or the like. The conductive material 240 may be applied to the first electrode 231 by various methods such as screen printing, inkjet printing, and metal deposition.

Meanwhile, in the present embodiment, the conductive material 240 may not be provided on the upper surface of the first electrode 231, and step S120 may be performed. Details will be described later.

If the nonconductive layer 213 is pressed toward the plurality of microdevices 230 formed on the upper portion of the source substrate 220 in step S120, the conductive material 240 may be inserted into the nonconductive layer 213 have. The nonconductive layer 213 may cover the upper surface of the micro device 230, specifically, the first electrode 231 and the conductive material 240.

The microdevice separation step S130 may be a step of separating the microdevice 230 from the source substrate 220 and transferring the microdevice 230 to the nonconductive layer 213. [

Various methods may be used to cause the micro element 230 to be peeled off from the source substrate 220. For example, a laser lift off (LLO) process 250 may be used.

The nonconductive layer 213 is bonded to the microdevice 230 to prevent breakage of the microdevice 230 due to a shock wave applied to the malleable element 230 during the laser stripping process.

The base film 211 and the adhesive layer 212 have a first bonding force W1 and the adhesive layer 212 and the nonconductive layer 213 have a second bonding force W2. The second coupling member 230 may be coupled to the third coupling force W3 and the microdevice 230 may be coupled to the source substrate 220 at the fourth coupling force W4.

However, when the laser stripping process is applied, the fourth bonding force W4 between the microdevice 230 and the source substrate 220 can be weakened to the fourth bonding force W4a.

Therefore, after the laser stripping process 250 is applied, the first bonding force W1 between the base film 211 and the adhesive layer 212 and the second bonding force W2 between the adhesive layer 212 and the non- The third bonding force W3 between the nonconductive layer 213 and the microdevice 230 may be greater than the fourth bonding force W4a between the weakened microdevice 230 and the source substrate 220 due to the laser stripping process . Thus, the micro element 230 can be peeled off from the source substrate 220 while the carrier film 210 and the micro element 230 are coupled.

In step S130, only the micro devices to be transferred to the target substrate 270 among the plurality of micro devices 230 formed on the source substrate 220 may be selected and peeled from the source substrate 220. In this case, the laser stripping process can be applied only to the corresponding micro device, which will be described later in detail.

The step of attaching the transfer film (S140) may be a step of attaching the transfer film (260) to the lower surface of the micro device (230).

The fifth engaging force W5 between the transfer film 260 and the micro element 230 may be equal to or greater than the first engaging force W1, the second engaging force W2 and the third engaging force W3.

The adhesive layer and the base film removing step S150 may be a step of removing the base film 211 together with the adhesive layer 212 from the nonconductive layer 213. [

The heat 251 may be applied to the adhesive layer 212 or the light 252 may be irradiated to the adhesive layer 212 in step S150 and the adhesiveness of the adhesive layer 212 may be changed or altered due to such heat and light, have. As a result, the second bonding force W2 between the adhesive layer 212 and the nonconductive layer 213 can be weakened or eliminated.

The weakened second 2a bonding force W2a may be smaller than the first bonding force W1, the third bonding force W3 and the fifth bonding force W5, The base film 211 provided on the adhesive layer 212 may be removed.

In the temporary fixing step S160, the non-conductive layer 213 is aligned and aligned with the upper portion of the target substrate 270, and the first electrode 231 provided on the micro-device 230 and the first electrode 231 provided on the target substrate 270, The conductive material 240 may be positioned between the second electrode 271 provided on the upper surface of the second electrode 271 and temporarily fixed.

As described above, the conductive material 240 may be provided on the first electrode 231 of the micro-device 230, but not limited thereto, and may be provided on the second electrode 271. Accordingly, the conductive material 240 may be provided on the first electrode 231 or may be provided on the second electrode 271 in step S160.

Then, the fluid conductive material 240 is trapped in the non-conductive layer 213 and can not move, and the shape and thickness of the conductive material 240 can be kept constant.

The nonconductive layer 213 and the target substrate 270 are heated so that the nonconductive layer 213 and the target substrate 270 are separated from each other so that the adhesive force between the nonconductive layer 213 and the target substrate 270 increases You may.

Here, the method of applying heat to the non-conductive layer 213 may be a method of heating directly by a heater or the like, or by heating with light such as a laser or UV.

The bonding step S170 may be a step of bonding the first electrode 231 and the second electrode 271 to the conductive material 240 by applying heat to the nonconductive layer 213 and the conductive material 240. [

Here, step S170 may include a conductive material squeezing step (S171) and a reflow step (S172).

The conductive material 240 is pressed by the first electrode 231 and the second electrode 271 by simultaneously pressing the microdevice 230 while applying heat to the nonconductive layer 213, . ≪ / RTI >

In the step S171, when the heat 253 is applied to the nonconductive layer 213, the viscosity of the nonconductive layer 213 may be lowered. The nonconductive layer 213 is compressed and the conductive material 240 can be pressed by the first electrode 231 and the second electrode 271. In this case,

The step of pressing the microdevice 230 toward the source substrate 220 may be performed by rotating the roll of the cylinder to press the microdevice 230 or pressing the microdevice 230 using a plate have.

Since the conductive material 240 is trapped in the nonconductive layer 213 and can be maintained in a constant shape in step S171, the first electrode 231 and the second electrode 271 are electrically conductive Can be stably pressed onto the material (240).

The target substrate 270 may be a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

The method of applying heat to the target substrate 270 can be performed by directly heating the target substrate 270 with a heater, a surface heater, or the like using light such as laser or UV. In addition, ultrasonic waves may be applied to the micro device 230 to heat locally (refer to FIG. 3 (g)).

The reflow step S172 may be a step of applying heat to the conductive material 240 to cure the conductive material 240. [

The reflow process is performed by applying heat to the conductive material 240 and the nonconductive layer 213 to electrically connect the first electrode 231 of the microdevice 230 and the second electrode 271 of the source substrate 220 to the conductive material 240 ), And curing the non-conductive layer 213. [0064]

The conductive material 240 is melted to form a firm electrical connection between the first electrode 231 of the microdevice 230 and the second electrode 271 of the source substrate 220 in step S172, 213 may be hardened to firmly adhere the surface of the microelectronic device 230 other than the first electrode 231 to the surface of the source electrode 220 other than the second electrode 271.

During the reflow process, the first electrode 231 and the second electrode 271 may be separated from each other and the conductivity therebetween may be weakened, so that during the melting of the conductive material 240, It is preferable that the gap between the first electrode 231 and the second electrode 271 is kept constant by pressurizing with a pressure.

In the method of applying heat to the target substrate 270 in step S172, the target substrate 270 may be directly heated by a heater, a surface heater, or the like, or may be heated using light such as laser or UV.

On the other hand, in steps S171 and S172, the temperature for heating the non-conductive layer 213 and the conductive material 240 needs to be different.

In step S171, the temperature at which the viscosity of the non-conductive layer 213 is lowered is sufficient, so that it is preferable to heat the non-conductive layer 213 to a relatively low first temperature. However, since a relatively high temperature is required to melt the conductive material 240 in step S172, the conductive material 240 and the non-conductive layer 240 may be melted at a second temperature higher than the first temperature at which the melting of the conductive material 240 is possible. 213 are preferably heated.

Conventionally, since there is no means for suppressing the flow of the conductive material, the substrate defect due to the flow of the conductive material 240 has been relatively large. However, in the present invention, since the position and shape of the conductive material 240 can be kept constant, poor bonding between the first electrode 231 and the second electrode 271 can be effectively prevented.

And, the micro element array transfer method may include a transfer film removing step (S180). The transfer film removing step S180 may be a step of removing the transfer film 260 from the micro device 230.

 Step S180 may be performed between steps S171 and S172. That is, after applying heat to the non-conductive layer 213, the micro-device 230 is pressed so that the conductive material 240 is pressed by the first electrode 231 and the second electrode 271, The transfer film 260 may be removed from the micro device 230 before the process proceeds.

Alternatively, step S180 may be performed after step S172. That is, the transfer film 260 may be removed from the micro device 230 after the reflow process is completed. This process can be carried out when the transfer film 260 is a material which is not deformed or damaged by the heat applied in the reflow process.

In addition, the micro element array transfer method may further include a conductive material solidification step (S190).

The conductive material solidification step (S190) may be a step of cooling and solidifying the molten conductive material (240) in step S170. In step S190, the conductive material 240 may be cooled to a predetermined temperature range for a predetermined time so that the conductive material 240 is solidified.

The nonconductive layer 213 and the conductive material 240 are hardened by performing the step S190 in order to firmly connect the micro device 230 and the target substrate 270 electrically and mechanically, It is possible to improve adhesion reliability and product durability of the micro device substrate manufactured through the device array transfer method.

A process of separating only the micro devices to be transferred to the target substrate 270 among the plurality of micro devices 230 formed on the source substrate 220 and peeling them from the source substrate 220 will be described.

FIGS. 4 and 5 are views illustrating a case where a selective transfer process is performed in the micro element array transfer method according to the first embodiment of the present invention. Hereinafter, the overlapped contents will be omitted as much as possible, and the description will be focused on the portion related to the micro element stripping step (S130).

4, a laser stripping process may be applied only to the microdevice 230a selected to be transferred in the microdevice removing step S130, and only the selected microdevice 230a may be removed from the source substrate 220, As shown in FIG.

The first bonding force W1 between the base film 211 and the adhesive layer 212 and the second bonding force W2 between the adhesive layer 212 and the nonconductive layer 213 and the second bonding force W2 between the adhesive layer 212 and the non- And the fourth bonding force W4 between the microdevice 230b and the source substrate 220 are the same as the bonding force W4 between the microdevice 230a and the source substrate 220 (W4a) between the fourth force (W4a). Since the fourth coupling force W4 is large in the fourth coupling force W4a, the microdevice 230b, which has not been subjected to the laser separation process, remains on the source substrate 220. [ The microdevice 230a to which the laser stripping process is applied can be selectively peeled from the source substrate 220 by being coupled to the carrier film 210. [

Accordingly, only the selected microdevice 230a can be transferred to the target substrate 270 from the microdevice array.

5, in the carrier film preparation step S110, the nonconductive layer 213 is formed only on the adhesive layer 212 corresponding to the micro element 230a to be transferred to the target substrate 270 . In other words, the non-conductive layer 213 may be provided on the adhesive layer 212 only in the portion corresponding to the micro element 230a to be peeled off from the source substrate 220. [

In this case, the microdevice 230a pressed to the nonconductive layer 213 in the non-conductive layer pressurizing step S120 may be a microdevice to be transferred to the target substrate 270. [

And, in the microdevice removing step S130, the un-peeled micro element 230b can maintain the initial clean surface since it does not contact the non-conductive layer 213 in the non-conductive layer pressing step S120.

If only the portion of the adhesive layer 212 corresponding to the micro element 230a to be transferred to the target substrate 270 is provided on the non-conductive layer 213, even if various kinds of micro elements are selectively peeled from one source substrate, And the remaining element is not in contact with the non-conductive layer. That is, only the micro element 230a to be peeled off and the nonconductive layer 213 corresponding to the micro element 230a are adhered to the upper surface of the source substrate 220, so that the space between the other micro element 230b and the adhesive layer May be in an empty state. Thus, the microelements 230b that remain unremoved can maintain a clean surface without being contaminated. This can prevent the adhesion force from being weakened by the contaminants so that the adhesive force can be maintained when the nonconductive layer is contacted in order to peel off the remaining microelements.

When only the portion of the adhesive layer 212 corresponding to the micro element 230a to be transferred to the target substrate 270 is provided on the non-conductive layer 213, various kinds of micro elements are selectively transferred The respective micro devices and the non-conductive layers adhered to the micro devices can be transferred to the target substrate without being overlapped or spatially interfered with each other. That is, since only the non-conductive layer 213 to which the selected micro element 230a and the corresponding micro element 230a are adhered is transferred onto the upper surface of the target substrate, the non-conductive layer 213, The space in which the stratum is to be transferred may be empty. Therefore, even if the non-conductive layer to which the other micro-elements and the micro-elements are adhered is additionally transferred to the empty space on the target substrate, the micro-elements and the non-conductive layer can be stably transferred without being disturbed by the previously transferred micro-elements and the non-conductive layer.

4 and 5 are the same as those in the first embodiment described above, so that further explanation is omitted.

FIGS. 6 and 7 are flowcharts illustrating a method of transferring a microarray array according to a second embodiment of the present invention, and FIG. 8 is a view illustrating a process of transferring a microarray array according to a second embodiment of the present invention.

As shown in FIGS. 6 to 8, the micro element array transfer method may include a nonconductive layer forming step S310, a temporary fixing step S320, and a bonding step S330.

The nonconductive layer forming step S310 may be a step of providing the nonconductive layer 413 on the side of the plurality of microdevices 430 formed on the source substrate 420. [

Although the conductive material 440 is provided on the upper surface of the first electrode 431 for convenience of explanation, the conductive material 440 is not provided on the upper surface of the first electrode 431, and the step S310 is performed It is possible.

The conductive material 440 can be inserted into the nonconductive layer 413 when the nonconductive layer 413 is pressed toward the plurality of microdevices 430 formed on the source substrate 420. [ The nonconductive layer 413 may cover the top surface of the microdevice 430, specifically, the first electrode 431 and the conductive material 440.

In addition, in the non-conductive layer forming step S310, the non-conductive layer 413 may be provided only on the source substrate 420 corresponding to the micro device to be peeled off.

In the temporary fixing step S320, the non-conductive layer 413 is disposed to face the upper portion of the target substrate 470 and the first electrode 431 provided on the micro element 430 and the second electrode 431 provided on the upper surface of the target substrate 470 The conductive material 440 may be positioned between the second electrode 471 provided on the first electrode 412 and the second electrode 471.

In the temporary fixing step S320, a process of aligning the position of the microdevice 430 may be performed such that the first electrode 431 is positioned vertically above the second electrode 471.

Meanwhile, as described above, the conductive material 440 may be provided on the first electrode 431 of the micro device 430, but may be provided on the second electrode 471. [ Therefore, in the temporary fixing step S320, the conductive material 440 may be provided on the first electrode 431 or may be provided on the second electrode 471. [

Then, the fluid conductive material 440 is trapped in the non-conductive layer 413 and can not move, and the shape and thickness of the conductive material 440 can be kept constant.

The target substrate 470 is heated so that the nonconductive layer 413 and the target substrate 470 are not separated from each other in the temporary fixing step S320 so that the mutual adhesion between the nonconductive layer 413 and the target substrate 470 May be increased.

The bonding step S330 may be a step of bonding the first electrode 431 and the second electrode 471 to the conductive material 440 by applying heat to the nonconductive layer 413 and the conductive material 440.

Here, the bonding step S330 may include a conductive material pressing step S331, a micro element removing step S332, and a reflow step S333.

The conductive material 440 is pressed by the first electrode 431 and the second electrode 471 while simultaneously applying pressure to the microdevice 430 while applying heat to the nonconductive layer 413, . ≪ / RTI >

In the step S331, when the heat 450 is applied to the nonconductive layer 413, the viscosity of the nonconductive layer 413 may be lowered. When the microdevice 430 is pressed with the viscosity lowered, the nonconductive layer 413 is compressed and the conductive material 440 can be pressed by the first electrode 431 and the second electrode 471.

Since the conductive material 440 is trapped in the nonconductive layer 413 and the shape thereof can be kept constant, the first electrode 431 and the second electrode 471 are electrically connected to the conductive material 440 ). ≪ / RTI >

The microdeposition step S332 may be a step of peeling the microdevice 430 from the source substrate 420. [

In the microdevice removing step S332, the microdevice 430 may be peeled off from the source substrate 420 through the laser peeling step 453.

 The reflow step S333 may be a step of applying heat to the conductive material 440 to cure the conductive material 440. [

In step S333, the conductive material 440 is melted to form a firm electrical connection between the first electrode 431 of the microdevice 430 and the second electrode 471 of the source substrate 420. At this time, 413 may be hardened to firmly adhere the surface of the microdevice 430 other than the first electrode 431 to the surface of the source substrate 420 other than the second electrode 471.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

210: carrier film
211: base film
212: Adhesive layer
213, 433:
220, 420: source substrate
230, 430:
231, 431:
240,440: Conductive material
260: Transfer film
270, 470: target substrate
271,471: Second electrode

Claims (10)

A carrier film providing step of providing a carrier film including a base film, an adhesive layer provided on an upper surface of the base film, and a nonconductive layer provided on an upper surface of the adhesive layer;
A nonconductive layer pressing step of disposing the carrier film so as to face the upper portion of the source substrate and pressing the nonconductive layer to a plurality of micro devices formed on the source substrate;
Peeling the micro device from the source substrate and transferring the micro device to the nonconductive layer;
Attaching a transfer film to a lower surface of the micro device;
An adhesive layer and a base film removing the base film together with the adhesive layer from the nonconductive layer;
A temporary fixing step of disposing the nonconductive layer facing the top of the target substrate and positioning and fixing the conductive material between the first electrode provided on the micro device and the second electrode provided on the upper surface of the target substrate; And
And bonding the first electrode and the second electrode to the conductive material by applying heat to the nonconductive layer and the conductive material. The method according to claim 1,
The bonding step
A conductive material pressing step of pressing the conductive material by the first electrode and the second electrode while simultaneously applying the microwaves while applying heat to the nonconductive layer;
And a reflow step of applying heat to the conductive material to cure the conductive material. 3. The method of claim 2,
The bonding step
And a transfer film removing step of removing the transfer film from the micro device between the conductive material pressing step and the reflow step or after the reflow step. The method according to claim 1,
Wherein the conductive material is provided in the first electrode or in a state provided in the second electrode in the temporary fixing step. The method according to claim 1,
In the microdeposition step,
Wherein only the microdevice to be transferred to the target substrate among the plurality of microdevices formed on the source substrate is selected and separated from the source substrate. The method according to claim 1,
In the carrier film forming step,
Wherein the nonconductive layer has only a portion corresponding to a micro device to be peeled off from the source substrate. A non-conductive layer providing step of providing a non-conductive layer to a plurality of micro elements side formed on an upper portion of the source substrate;
A temporary fixing step of disposing and fixing the conductive material between the first electrode provided on the micro device and the second electrode provided on the upper surface of the target substrate by disposing the non-conductive layer facing the top of the target substrate; And
And bonding the first electrode and the second electrode to the conductive material by applying heat to the nonconductive layer and the conductive material. 8. The method of claim 7,
The bonding step
A conductive material pressing step of pressing the conductive material by the first electrode and the second electrode while simultaneously applying the microwaves while applying heat to the nonconductive layer;
Removing the micro device from the source substrate;
And a reflow step of applying heat to the conductive material to cure the conductive material. 8. The method of claim 7,
Wherein the conductive material is provided in the first electrode or in a state provided in the second electrode in the temporary fixing step. 8. The method of claim 7,
In the non-conductive layer preparation step,
Wherein the nonconductive layer has only a portion corresponding to a micro device to be peeled off from the source substrate.

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