KR20190042491A - Copper materials for sputtering targets and sputtering targets - Google Patents

Abstract

The sputtering target copper material contains at least one element selected from Zr, Ti, Mg, Mn, La, and Ca in an amount of 0.001 mass% or more and 0.008 mass% or less, And the total content of the additive elements is 99.99 mass% or more. It is preferable that the content of S is 0.005 mass% or less.

Description

Copper materials for sputtering targets and sputtering targets

The present invention relates to a copper material for a sputtering target used for forming a wiring film (copper film) in a semiconductor device, a flat panel display such as a liquid crystal or an organic EL panel, a touch panel, etc., and a sputtering target .

The present application claims priority based on Japanese Patent Application No. 2016-165553 filed on Aug. 26, 2016, the contents of which are incorporated herein by reference.

Aluminum (Al) has been widely used as a wiring film for semiconductor devices, flat panel displays such as liquid crystal and organic EL panels, and touch panels. In recent years, miniaturization (narrowing) and thinning of the wiring film have been promoted, and a wiring film having a lower specific resistance than that of the conventional one is required.

Accordingly, with the above-described miniaturization and thinning of the wiring film, a wiring film made of copper (Cu), which is a material having a lower specific resistance than Al, is provided.

Incidentally, the wiring film described above is usually formed in a vacuum atmosphere using a sputtering target. As a sputtering target for forming a copper wiring film, for example, one disclosed in Patent Documents 1 and 2 has been proposed.

Patent Document 1 proposes a copper target for sputtering having a substantially recrystallized structure and an average crystal grain size of 80 micrometers or less and a Vickers hardness of 100 Hv or less in pure copper having a purity of 99.995 wt% or more.

Patent Document 1 aims at reducing the amount of deformation and reducing the generation of coarse clusters by refining crystal grains as a recrystallized structure and uniformly forming copper wirings by matching the orientations of copper particles.

Patent Document 2 discloses a process for producing a high-purity copper ingot, comprising the steps of: preparing a molten ingot from an electric copper by the John Melt method; preparing a high-purity copper ingot by vacuum melting the molten ingot; Purity copper ingot having an oxygen content of 10 ppm or less, a sulfur content of 1 ppm or less, an iron content of 1 ppm or less, and a purity of 99.999% or more, There is proposed a method of manufacturing a sputtering target which obtains a sputtering target made of a copper base material.

Patent Document 2 aims at producing a sputtering target capable of forming a wiring film having good flowability of a wiring film at the time of film formation and being dense and having good adhesion.

Japanese Patent Application Laid-Open No. 11-158614 Japanese Patent Application Laid-Open No. 2007-023390

However, when the film formation is performed using the sputtering target, an abnormal discharge (arcing) may occur due to the concentration of electric charges, and as a result, a uniform wiring film may not be formed. The abnormal discharge is a phenomenon in which an extremely high current suddenly flows suddenly as compared with the case of normal sputtering and an abnormally large discharge suddenly occurs. If such an abnormal discharge occurs, particles may be generated, The film thickness may become uneven or may become uneven. Therefore, it is desired to avoid an abnormal discharge during film formation as much as possible.

Particularly recently, in the semiconductor devices, flat panel displays such as liquid crystal and organic EL panels, touch panels, etc., it is required to further increase the densification of the wiring films, and it is necessary to stably form wiring films that are further miniaturized and thinned have.

In the copper target for sputtering described in Patent Document 1, as the recrystallized structure, it is described that the average crystal grain size is made smaller and the amount of deformation is reduced, but there is no particular mention about impurities. For example, when sulfur (S) is contained as an impurity, the progress of recrystallization is suppressed, so that there is a possibility that a uniform recrystallized structure can not be obtained. Therefore, even when the average crystal grain size is small and the amount of deformation is low as a whole, an unrecrystallized region exists, and when there is a locally high deformation amount, there is a possibility that an abnormal discharge tends to occur easily.

In the method for producing a sputtering target described in Patent Document 2, a molten ingot having a purity of 99.9995% is produced by the John Melt method, and the amount of impurities is suppressed. However, no consideration is given to recrystallization behavior, There is a possibility that the abnormal discharge tends to occur as well. Further, since the zone-melt method is used, there is a problem that the production efficiency is largely lowered.

It is an object of the present invention to provide a copper material for a sputtering target that can be formed at a low cost while stably forming a film by suppressing the generation of an abnormal discharge and taking into account the above-described circumstances.

In order to solve the above problems, the copper material for a sputtering target of the present invention preferably contains 0.001% by mass or more and 0.008% by mass or less of one or more kinds of additive elements selected from Zr, Ti, Mg, , And the total of the content of Cu and the content of the additive element is 99.99 mass% or more.

The copper material for the sputtering target preferably contains 0.001 mass% or more and 0.008 mass% or less of one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca, And the content of the additive element is 99.99 mass% or more, so that it can not be made into a higher purity than necessary. Therefore, it can be manufactured at a relatively low cost.

Further, since one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La, and Ca are contained in the range of 0.001 mass% or more and 0.008 mass% or less, S is fixed as a compound And it is possible to suppress the inhibition of the progress of recrystallization by S. Therefore, a uniform recrystallized structure can be obtained, and occurrence of abnormal discharge (arcing) at the time of film formation can be suppressed. Examples of the sulfur compound include ZrS ₂ , TiS, TiS ₂ , MgS, MnS, LaS, La ₂ S ₃ , CaS and the like.

In the copper material for a sputtering target of the present invention, the content of S is preferably 0.005 mass% or less. In this case, since the content of S is limited to 0.005 mass% or less, S can be securely fixed by the above-described additive element, uniform recrystallized structure can be obtained, and abnormal discharge (arcing) Can be suppressed. In addition, deterioration of the conductivity can be suppressed.

In the copper material for a sputtering target of the present invention, it is preferable that the area ratio occupied by the additive element and the compound containing S in the same plane as the sputter surface is 0.4% or less. In this case, since the area ratio occupied by the compound including the additive element and S is suppressed to 0.4% or less, it is possible to suppress the increase in the temperature of the recrystallization temperature to further promote the progress of recrystallization, . Furthermore, it is possible to reliably suppress the occurrence of an abnormal discharge caused by the compound including the additive element and S.

In the copper material for a sputtering target of the present invention, it is preferable that the Vickers hardness is 80 Hv or less. In this case, the film has a uniform recrystallized structure and the deformation is sufficiently released, so that the occurrence of an abnormal discharge (arcing) at the time of film formation can be reliably suppressed.

In the copper material for a sputtering target of the present invention, the standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is preferably 10 or less. In this case, since the deformation is uniformly released, there is no region having a locally high deformation amount, and occurrence of an abnormal discharge can be surely suppressed.

The copper material for a sputtering target of the present invention preferably has an average crystal grain size of 100 mu m or less. In this case, since the average crystal grain size is relatively small at 100 占 퐉 or less, the irregularities occurring on the sputter surface when the sputter advances can be reduced, and the occurrence of anomalous discharge can be suppressed.

On the other hand, the sputtering target of the present invention has a target body made of the copper material for the sputtering target and a backing plate fixed to one surface of the target body. Even in this sputtering target, the above-described excellent effect can be obtained.

According to the present invention, it is possible to provide a copper material for a sputtering target that can be formed at low cost while stably forming a film by suppressing the generation of abnormal discharge.

1 is a plan view showing a measurement position of Vickers hardness in a copper material for a sputtering target having a circular sputter face.
Fig. 2 is a plan view showing a measurement position of Vickers hardness in a copper material for a sputtering target in which a sputter surface is rectangular.
FIG. 3A is a plan view showing a measurement position of Vickers hardness in a copper material for a sputtering target in which the sputter surface is cylindrical. FIG.
FIG. 3B is a front view showing a measurement position of Vickers hardness in a copper material for a sputtering target in which the sputter surface is cylindrical. FIG.
4 is a flowchart for explaining an example of a method of manufacturing a copper material for a sputtering target according to an embodiment of the present invention.

Hereinafter, a copper material for a sputtering target according to an embodiment of the present invention will be described.

The copper material for a sputtering target of the present embodiment is a material of a sputtering target used for forming a copper film used as a wiring film in a semiconductor device, a flat panel display such as a liquid crystal or an organic EL panel, a touch panel, etc. . The shape of the copper material for the sputtering target is not limited, but may be, for example, a disc shape, a rectangular flat plate shape, or a cylindrical shape.

The composition of the copper material for a sputtering target of the present embodiment contains 0.001 mass% or more and 0.008 mass% or less of one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca , And the total of the content of Cu and the content of the additive element is 99.99 mass% or more. In the present embodiment, the content of S is 0.005 mass% or less.

Further, the copper material for a sputtering target of the present embodiment contains S and S (one or more elements selected from Zr, Ti, Mg, Mn, La, and Ca) described above in the same plane as the sputter surface Is 0.4% or less.

In the copper material for a sputtering target of the present embodiment, the Vickers hardness is 80 Hv or less.

In the copper material for a sputtering target of the present embodiment, the standard deviation of Vickers hardness measured at a plurality of points in the same plane as the sputter surface is 10 or less.

The copper material for a sputtering target of the present embodiment has an average crystal grain size of 100 mu m or less.

The reason why the composition of the copper material for a sputtering target, the area ratio of the compound on the sputter surface, the Vickers hardness, the standard deviation of the Vickers hardness, and the average crystal grain size of the sputtering target of the present embodiment are described below will be described below.

(0.001 mass% or more and 0.008 mass% or less) of one or more elements selected from Zr, Ti, Mg, Mn, La, and Ca;

Since the above-described additive element is an element having a lower sulfide formation free energy than Cu, it is possible to form a compound with S (sulfur), and to fix the entire amount or most of S. Thereby, recrystallization can be promoted.

If the content of the one or more additional elements selected from Zr, Ti, Mg, Mn, La, and Ca is less than 0.001% by mass, S in the copper may not be sufficiently fixed. On the other hand, when the content of one or more of the additive elements selected from Zr, Ti, Mg, Mn, La, and Ca exceeds 0.008 mass%, the number of particles of the additive element and S- Or the compound particles are coarsened and an abnormal discharge may occur due to the particles of the compound exposed to the sputter surface.

Therefore, in the present embodiment, the content of one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La, and Ca is set within a range of 0.001 mass% or more and 0.008 mass% or less.

It is preferable that the lower limit of the content of one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca is 0.0015 mass% or more, more preferably 0.0020 mass% or more, Or more.

In order to suppress the generation of anomalous discharge caused by the compound, it is preferable that the upper limit of the content of one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca be 0.0060 mass% or less , And more preferably 0.0040 mass% or less.

(The total of the Cu content and the content of the additive element is 99.99 mass% or more)

When a wiring film (high purity copper film) is formed by sputtering, it is preferable to reduce impurities as much as possible in order to suppress abnormal discharge (arcing). However, in order for the total amount of the Cu content and the content of the additive element to be 99.999 mass% or more, the production process becomes complicated and the manufacturing cost is greatly increased. Therefore, in this embodiment, the total of the Cu content and the content of the additive element is set to 99.99 mass% or more, thereby reducing the manufacturing cost. The upper limit of the total of the Cu content and the content of the additive element is preferably less than 99.999 mass% from the viewpoint of reduction of the production cost.

(S: 0.005 mass% or less)

S is an element that deteriorates the progress of recrystallization of copper and decreases the conductivity. When the content of S is more than 0.005% by mass, even when the above-described additive element is added, S can not be sufficiently fixed, recrystallization becomes insufficient, a non-recrystallized region is generated, There is a risk of it becoming dangerous. Further, there is a fear that the conductivity is lowered.

For this reason, it is preferable to limit the content of S to 0.005% by mass or less in order to fully conduct the recrystallization to sufficiently equalize the deformation amount and ensure the conductivity. The content of S is more preferably 0.003 mass% or less, and still more preferably 0.001 mass% or less. However, since it is difficult to make the content of S to zero, it may be 0.0003 mass% or more.

(The area ratio occupied by the compound including the additive element and S in the same plane as the sputter surface: 0.4% or less)

Addition of one or more additional elements selected from Zr, Ti, Mg, Mn, La, and Ca results in the generation of a compound containing an additive element and S, and a part of the compound is added to a copper material for sputtering target It may be incorporated. When the number of particles of the compound containing the additive element and S is increased, or when the particles of the compound are coarse, the recrystallization temperature may become high and the recrystallization may be inhibited. In addition, when the film is formed, particles of the compound are exposed to the sputter surface, which may cause an abnormal discharge.

Therefore, in this embodiment, the area ratio occupied by the compound including the additive element and S is 0.4% or less. The area ratio occupied by the additive element and the compound including S is preferably 0.3% or less, more preferably 0.1% or less. Since it is difficult to set the area ratio to zero, it may be 0.03% or more.

(Vickers hardness: 80 Hv or less)

When the recrystallization is promoted and the deformation is sufficiently released, the Vickers hardness becomes low. When the Vickers hardness is 80 Hv or less, the recrystallization proceeds sufficiently and the deformation is released. For this reason, in the present embodiment, the Vickers hardness is limited to 80 Hv or less. The Vickers hardness is preferably 65 Hv or less, and more preferably 50 Hv or less. The Vickers hardness may be 30 Hv or more.

In the present embodiment, the average value of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is 80 Hv or less. The same plane as the sputtering surface means a surface parallel to the surface to be sputtered after the copper material is formed into a sputtering target, and this surface is subjected to grinding, polishing or cleaning as necessary to form a sputtering surface.

(Standard deviation of Vickers hardness measured at a plurality of points in the same plane as the sputter surface: 10 or less)

In the case where a region having a non-recrystallized region and locally highly deformed regions is present, the Vickers hardness varies.

When the standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is 10 or less, the fluctuation of the Vickers hardness is small, and there is almost no locally highly deformed region.

Therefore, in this embodiment, the standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is limited to 10 or less. The standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is preferably 5 or less, and more preferably 3 or less.

In the present embodiment, the above-described Vickers hardness measurement position is set as follows according to the shape of the copper material for the sputtering target.

In the case where the sputter surface of the sputtering target copper material is circular, as shown in Fig. 1, two linear outer circumferential portions 2, which pass through the center of the circle and the center of the circle and are perpendicular to each other, The Vickers hardness is measured at five points (3), (4) and (5), and the average value and the standard deviation thereof are calculated. The outer peripheral portion is, for example, a point located 5 mm inside from the outer periphery of the copper material.

When the sputter surface of the sputtering target copper material is rectangular, as shown in Fig. 2, the intersection 1 where the diagonal lines intersect with each other and the corner portions 2, 3, 4, 5), and the average value and the standard deviation of the Vickers hardness are calculated. The corner portion refers to, for example, a point located 5 mm inside from a vertex of a rectangle along a diagonal line.

When the sputter surface of the sputtering target copper material is a cylindrical surface, imaginary lines are drawn at three equally spaced intervals in the circumferential direction as shown in Figs. 3A and 3B, and on these three imaginary lines, And the Vickers hardness is measured at nine points (A1 to A3, B1 to B3, and C1 to C3) of these nine points in total, and the average value and the standard deviation thereof are calculated. The three points on each imaginary line are, for example, the points located at the center point of the imaginary line and inside 10 mm from both ends of the imaginary line.

(Average crystal grain size: 100 탆 or less)

The sputter rate is a statistical probability value of the number of atoms protruding from the target when one ion collides with the target, and differs depending on the crystal orientation of each crystal exposed to the sputter surface. Therefore, when the sputter proceeds, irregularities corresponding to the crystal grains are generated on the sputter surface due to the difference in the sputter rate.

If the average crystal grain size on the sputter surface exceeds 100 mu m, the anisotropy of the crystal orientation becomes remarkable, so that irregularities generated on the sputter surface become large, and charges are concentrated on the convex portions, and anomalous discharge easily occurs. For this reason, in the copper material for a sputtering target of the present embodiment, the average crystal grain size is defined as 100 m or less. In the present embodiment, the average crystal grain size is more preferably 80 占 퐉 or less, and more preferably 50 占 퐉 or less. The average crystal grain size may be 5 탆 or more.

Next, an example of a method for producing a copper material for a sputtering target according to the present embodiment will be described with reference to Fig.

(Dissolution / casting step S01)

First, a copper raw material having a copper purity of 99.99 mass% or more is dissolved to obtain a copper molten metal. Next, one or two or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La, and Ca are added to the obtained molten copper to obtain a predetermined concentration, and components are produced to obtain a molten copper alloy.

In this embodiment, an ingot having a predetermined cross-sectional shape (for example, rectangular, circular, or annular) is manufactured by using a continuous casting apparatus.

(Cold working step S02)

Next, the ingot having a predetermined cross-sectional shape is subjected to cold working. The processing rate in the cold working is preferably within a range of 40.0% or more and 99.9% or less.

(Heat treatment step S03)

Next, heat treatment is performed after cold working. The heat treatment temperature is preferably in the range of 100 ° C to 600 ° C, and the holding time is preferably in the range of 30min to 300min. It is more preferable that the heat treatment temperature is within the range of 150 占 폚 to 400 占 폚, and the holding time is within the range of 60 minutes to 180 minutes. By the heat treatment step S03, the recrystallization proceeds and the deformation imparted in the cold working step S02 is released.

(Machining step S04)

Next, machining is carried out after the heat treatment to remove the oxide film on the surface, and finish in a predetermined shape.

The copper material for a sputtering target of the present embodiment is produced by the above-described process. In the case of manufacturing a sputtering target, the copper material is processed into a desired shape, and a backing plate made of a metal such as copper is bonded to the back surface of the copper material, if necessary, to obtain a sputtering target. Between the copper material and the backing plate, a bonding layer made of In or In alloy may be formed if necessary.

According to the copper material for a sputtering target of the present embodiment having the above-described constitution, it is preferable that the copper material for a sputtering target contains 0.001 mass% or more and 0.008 mass% or less of one or more kinds of additive elements selected from Zr, Ti, Mg, , And the total of the content of Cu and the content of the additive element is 99.99 mass% or more. Thus, the composition can be manufactured at a relatively low cost since it is not highly purified.

Further, since one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La, and Ca are contained in the range of 0.001 mass% or more and 0.008 mass% or less, S is fixed as a compound And it is possible to suppress the inhibition of the progress of recrystallization by S. Therefore, a uniform recrystallized structure can be obtained, and occurrence of abnormal discharge (arcing) at the time of film formation can be suppressed.

In the present embodiment, since the content of S is limited to 0.005% by mass or less, S can be reliably fixed by one or two or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca So that a uniform recrystallized structure can be obtained and occurrence of an abnormal discharge (arcing) at the time of film formation can be suppressed. In addition, deterioration of the conductivity can be suppressed.

Further, in the present embodiment, since the area ratio occupied by the compound including the additive element and S is suppressed to 0.4% or less in the same plane as the sputter surface, the increase in the recrystallization temperature can be suppressed and the recrystallization can be further promoted, Generation of the non-recrystallized region can be further suppressed. Furthermore, it is possible to reliably suppress the occurrence of an abnormal discharge caused by the compound including the additive element and S.

Further, in the present embodiment, since the Vickers hardness is 80 Hv or less, it has a uniform recrystallized structure and is sufficiently free from deformation, and it is possible to reliably suppress occurrence of abnormal discharge (arcing) at the time of film formation .

In the present embodiment, since the standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is 10 or less, deformation is uniformly released, there is no region having a locally high deformation amount, Occurrence of discharge can be reliably suppressed.

In this embodiment, as shown in Fig. 1 to Fig. 3, the measurement point of the Vickers hardness is specified in accordance with the shape of the copper material for the sputtering target. Therefore, The average value and the standard deviation of the Vickers hardness can be appropriately calculated and a copper material for a sputtering target having a uniform deformation can be obtained.

Further, in the present embodiment, since the average crystal grain size is relatively small at 100 占 퐉 or less, the irregularities occurring on the sputter surface when the sputter advances can be reduced, and the occurrence of anomalous discharge can be suppressed.

In this embodiment, the cold working step S02 and the heat treatment step S03 are performed after the dissolving and casting step S01. However, as described above, one or two selected from Zr, Ti, Mg, S (sulfur) is fixed by the added elements and the progress of the recrystallization is promoted, so that a uniform recrystallized structure can be obtained.

Although the embodiment of the present invention has been described above, the present invention is not limited thereto, and can be appropriately changed without departing from the technical idea of the invention.

In the present embodiment, a sputtering target for forming a high-purity copper film as a wiring film has been described as an example. However, the present invention is not limited to this, and a copper film may be used for other purposes.

The manufacturing method of the copper material for the sputtering target is not limited to this embodiment, and it may be manufactured by another manufacturing method. For example, a hot working step may be provided after the melting and casting step. Further, the ingot may be obtained by using, for example, a batch-type casting apparatus without using a continuous casting apparatus.

Example

The results of the evaluation test evaluated for the copper material for a sputtering target of the above-described embodiment will be described below.

A copper raw material having a purity of 99.99 mass% or more was prepared, and an ingot having a rectangular cross section of 50 mm x 200 mm was obtained by using a continuous casting apparatus by dissolving a copper molten material so as to have the composition shown in Table 1.

The obtained ingot was subjected to cold rolling at the processing rate shown in Table 2. Thereafter, heat treatment was performed under the conditions shown in Table 2.

Thereafter, a cutting process was performed to obtain a copper material for a sputtering target having a rectangular shape of 10 mm x 130 mm x 140 mm.

With respect to the obtained copper material for a sputtering target, an area ratio occupied by the additive element and the compound including S in the same plane as the sputter surface, an average value and standard deviation of the Vickers hardness, an average crystal grain size, a conductivity, , And evaluated by the following procedure. The evaluation results are shown in Table 2.

(Area ratio of compound)

A surface analysis at a field of view 60 탆 x 80 탆 was carried out by SEM-EPMA, and a case where the additive elements M and S were detected at the same position was regarded as an MS compound, and a "detection region (total number) 60 mu m x 80 mu m) x 100 ".

(Vickers hardness)

The Vickers hardness was measured by a Vickers hardness tester in accordance with JIS Z 2244 at the position shown in FIG. 2 in the same plane as the sputter surface of the copper material for sputtering target, and the average value and standard deviation thereof were calculated. The evaluation results are shown in Table 2.

(Average crystal grain size)

A test specimen for observation was sampled from the position shown in Fig. 2 on the same plane as the sputter surface of the sputtering target copper material, and microstructure observation was carried out using an optical microscope. Based on JIS H 0501: 1986 (cutting method) To measure the crystal grain size, and to calculate the average crystal grain size. The evaluation results are shown in Table 2.

(Film forming conditions)

The obtained copper material for a sputtering target was bonded to a backing plate, and a copper thin film was formed under the following conditions.

Sputter voltage: 3000 V

Reached vacuum degree: 5 × 10 ^-4 Pa

Sputter gas: Ar, 0.4 Pa

Sputtering was performed for 1 hour under the film forming conditions, and the number of times of occurrence of the abnormal discharge was automatically measured by the arcing counter attached to the sputter power source device. The evaluation results are shown in Table 2.

In Comparative Example 1 in which one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La, and Ca were not added, the standard deviation of the Vickers hardness was large and the number of times of occurrence of the abnormal discharge was relatively large. It is presumed that the progress of recrystallization is obstructed by S and a non-recrystallized region exists, and a region with high deformation locally exists.

In the case of Comparative Example 2 in which one or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca were added in an amount exceeding 0.008 mass%, the area ratio of the compound was high, More. Also, the conductivity was lowered.

In Comparative Example 3 in which the content of Cu and the content of the additive element were less than 99.99 mass%, the Vickers hardness was high and the standard deviation was large. Also, the average crystal grain size was large, and the number of times of occurrence of the abnormal discharge became large. It is presumed that the recrystallization was insufficient and the deformation was high.

On the other hand, it is preferable to contain one or two or more kinds of additive elements selected from Zr, Ti, Mg, Mn, La and Ca within the range of 0.001 mass% to 0.008 mass%, and the content of Cu and the content Of the present invention is 99.99 mass% or more, the number of times of occurrence of the abnormal discharge is small. It is presumed that the recrystallization is promoted and the deformation is uniformly released.

From the above, it was confirmed that, according to the copper material for a sputtering target of the present invention, the occurrence of the abnormal discharge can be suppressed and the deposition can be performed stably.

Claims (7)

At least one additive element selected from the group consisting of Zr, Ti, Mg, Mn, La and Ca in an amount of 0.001 mass% or more and 0.008 mass% or less and the total content of Cu and the content of the additive element is Or more and 99.99 mass% or more. The method according to claim 1,
Wherein the content of S is 0.005 mass% or less. 3. The method according to claim 1 or 2,
Wherein the area ratio occupied by the additive element and the compound containing S in the same plane as the sputter surface is 0.4% or less. 4. The method according to any one of claims 1 to 3,
Wherein the Vickers hardness is 80 Hv or less. 5. The method according to any one of claims 1 to 4,
Wherein the standard deviation of the Vickers hardness measured at a plurality of points in the same plane as the sputter surface is 10 or less. 6. The method according to any one of claims 1 to 5,
Wherein the average grain size of the copper material is not more than 100 占 퐉. A sputtering target having a target body made of a copper material for a sputtering target according to any one of claims 1 to 6 and a backing plate fixed to one surface of the target body.

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