KR20190036064A - Reflector electrode for micro light emitting devices, micro light emitting devices having reflector electrode and manufacturing method thereof - Google Patents

Reflector electrode for micro light emitting devices, micro light emitting devices having reflector electrode and manufacturing method thereof Download PDF

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KR20190036064A
KR20190036064A KR1020170124835A KR20170124835A KR20190036064A KR 20190036064 A KR20190036064 A KR 20190036064A KR 1020170124835 A KR1020170124835 A KR 1020170124835A KR 20170124835 A KR20170124835 A KR 20170124835A KR 20190036064 A KR20190036064 A KR 20190036064A
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layer
electrode layer
reflective
transparent electrode
reflective layer
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KR101979307B1 (en
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김태근
오상훈
손경락
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고려대학교 산학협력단
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Priority to PCT/KR2018/011258 priority patent/WO2019066411A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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Abstract

The present invention relates to a reflective electrode for a micro light emitting device, a micro light emitting device having the same, and a method of manufacturing a reflective electrode for a micro light emitting device.
The present invention also provides a transparent electrode layer formed on a p-type semiconductor layer of a micro light emitting device, an insulator formed on the transparent electrode layer and reflecting light emitted from the active layer of the micro light emitting device and flowing through the transparent electrode layer, A reflective layer including a conductive filament connecting the transparent electrode layer and the p-type electrode layer, and a p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer. It is possible to provide a reflective electrode having a reflective efficiency and an excellent conductivity, and in particular, to improve the reflection efficiency in the ultraviolet (UV) region.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective electrode for a micro light emitting device, a micro light emitting device having the same, and a method for manufacturing a reflective electrode for a micro light emitting device,

The present invention relates to a reflective electrode for a micro light emitting device, a micro light emitting device having the same, and a method of manufacturing a reflective electrode for a micro light emitting device.

Generally, in a nitride-based light emitting device, there is a problem that an efficiency droplet is generated as the injected current density is increased, thereby reducing the external quantum efficiency (EQE). Therefore, various studies And development.

In this connection, studies have been actively made on a micro light emitting device having a pixel size of 100 m or less, which is excellent in current dispersion effect and current injection efficiency. In this case, since the pixel size is small, There is a problem that the reflection efficiency is reduced.

That is, since the p-electrode used for current injection in the micro light emitting device absorbs or blocks the light emitted from the active layer in the pixel, light to be emitted from the micro light emitting device to the outside is reduced.

Therefore, metal electrodes composed of gold (Au) or aluminum (Al) are mostly used in order to minimize the reduction of the reflection efficiency by the p-electrode. However, even in the case of such a metal electrode, efficiency reduction by current crowding There is a problem that the reflectance with respect to the wavelength of the ultraviolet (UV) region is remarkably low.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a reflective electrode for a micro light emitting device having a high reflectivity to an ultraviolet (UV) And a method of manufacturing a reflective electrode for a micro light emitting device.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a reflective electrode provided in a micro light emitting device in which a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked, ; A reflective layer formed on the transparent electrode layer, the reflective layer including a conductive filament connecting the transparent electrode layer and the p-type electrode layer in an insulator that reflects light emitted from the active layer through the transparent electrode layer; And a p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer.

In a preferred embodiment, the conductive filament of the reflective layer is formed by an electric field applied through the transparent electrode layer and the p-type electrode layer after the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially laminated.

In a preferred embodiment, the reflective layer is a distributed Bragg reflector (DBR) in which different resistance change materials are alternately repeatedly laminated.

In a preferred embodiment, the resistance-changing material forming the reflective layer is selected from the group consisting of Al 2 O 3 , SiO 2 , HfO 2 , TiO 2 , ZnO, ), trioxide, tungsten (WO 3), molybdenum oxide (MoO 3), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn x O y , Zr x O y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y , Ga x O y , boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x, and Cu x O y .

In a preferred embodiment, the p-type electrode layer includes a plurality of layers in which at least two materials among chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) .

Further, the present invention provides a semiconductor device comprising: an n-type semiconductor layer laminated on a substrate; An active layer stacked on the n-type semiconductor layer; A p-type semiconductor layer laminated on the active layer; A transparent electrode layer formed on the p-type semiconductor layer; A reflective layer formed on the transparent electrode layer, the reflective layer including a conductive filament connecting the transparent electrode layer and the p-type electrode layer in an insulator that reflects light emitted from the active layer through the transparent electrode layer; And a p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer.

In a preferred embodiment, the conductive filament of the reflective layer is formed by an electric field applied through the transparent electrode layer and the p-type electrode layer after the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially laminated.

In a preferred embodiment, the reflective layer is a distributed Bragg reflector (DBR) in which different resistance change materials are alternately repeatedly laminated.

In a preferred embodiment, the resistance-changing material forming the reflective layer is selected from the group consisting of Al 2 O 3 , SiO 2 , HfO 2 , TiO 2 , ZnO, ), trioxide, tungsten (WO 3), molybdenum oxide (MoO 3), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn x O y , Zr x O y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y , Ga x O y , boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x, and Cu x O y .

In a preferred embodiment, the p-type electrode layer includes a plurality of layers in which at least two materials among chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) .

The present invention also provides a method of manufacturing a reflective electrode provided in a micro light emitting device in which a substrate, an n-type semiconductor layer, an active layer and a p-type semiconductor layer are sequentially laminated, comprising the steps of: (1) forming a transparent electrode layer on the p- ; (2) forming a reflective layer on the transparent electrode layer to reflect light emitted from the active layer and flowing through the transparent electrode layer; (3) forming a p-type electrode layer electrically connected to the transparent electrode layer through the reflective layer on the reflective layer; And (4) forming a conductive filament in the reflective layer to electrically connect the transparent electrode layer and the p-type electrode layer to each other.

In a preferred embodiment, the conductive filament of the reflective layer formed in the step (4) is formed by sequentially laminating the transparent electrode layer, the reflective layer and the p-type electrode layer, and then the transparent electrode layer and the p- Lt; / RTI >

In a preferred embodiment, the reflective layer formed in step (2) is a distributed Bragg reflector (DBR) in which different resistance change materials are alternately repeatedly laminated.

In a preferred embodiment, the resistance change material forming the reflective layer in the step (2) is at least one selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), hafnium oxide (HfO 2 ) 2), zinc oxide (ZnO), antimony trioxide of tungsten (WO 3), molybdenum (MoO 3), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO) oxide, Ga doped ZnO ( GZO), Sn x O y, Zr x O y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In selected from x N y, Ga x N y , Ga x O y, boron nitride (BN), Ni x N y, Si x N y, Al doped ZnO (AZO), Mg x Zn y O x , and Cu x O y do.

In a preferred embodiment, the p-type electrode layer formed in step (3) is at least two of chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) The material is formed of a plurality of layers which are sequentially stacked.

According to an embodiment of the present invention, there is provided a light emitting device comprising: a transparent electrode layer formed on a p-type semiconductor layer of a micro light emitting device; a light emitting layer formed on the transparent electrode layer and emitting light from the active layer of the micro light emitting device, And a p-type electrode layer formed on the reflective layer and including a conductive filament connecting the transparent electrode layer and the p-type electrode layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer, It is possible to provide a reflective electrode having an improved reflection efficiency and an excellent conductivity as compared with the metal electrode, and in particular, the reflection efficiency in the ultraviolet (UV) region can be improved.

In addition, the present invention has the effect of improving the efficiency of reflection by the reflective electrode, thereby improving the efficiency of the micro-light emitting device itself.

1 is a view for explaining a micro light emitting device according to an embodiment of the present invention.
2 is a view for explaining a detailed configuration of a reflective electrode for a micro light emitting device according to an embodiment of the present invention.
3 is a view for explaining a reflection layer of a reflection electrode for a micro light-emitting device;
FIGS. 4 and 5 are diagrams for explaining the reflectivity of a reflective electrode for a micro light-emitting device. FIG.
6 is a view for explaining a p-type electrode layer of a reflective electrode for a micro light-emitting element;
7 is a view for explaining a method of manufacturing a reflective electrode for a micro light emitting device according to an embodiment of the present invention.

It will be understood by those skilled in the art that the specific details of the invention are set forth in order to provide a thorough understanding of the present invention and that the present invention may be readily practiced without these specific details, It will be clear to those who have.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to FIGS. 1 to 7, but the present invention will be described with reference to the portions necessary for understanding the operation and operation according to the present invention.

1 is a view for explaining a micro light emitting device according to an embodiment of the present invention.

1, a micro light emitting device according to an embodiment of the present invention includes a reflective electrode 100 for a micro light emitting device, an n-type nitride semiconductor layer 200, an active layer 300, a p-type nitride semiconductor layer 400, And a reflector layer 500.

Here, the reflective electrode 100 for a micro light-emitting device according to an embodiment of the present invention may be formed on a top surface of a micro light-emitting device formed on a substrate 10, and the micro light-emitting device may include an n-type nitride semiconductor layer 200, an active layer 300, and a p-type nitride semiconductor layer 400 sequentially stacked.

The n-type nitride semiconductor layer 200 is deposited on the substrate 10. The n-type nitride semiconductor layer 200 may be formed of gallium nitride (GaN) or n-type gallium nitride (N-GaN). The n-type nitride semiconductor layer 200 may include an active layer 300, Lt; RTI ID = 0.0 > N-type < / RTI >

The active layer 300 is deposited on the n-type nitride semiconductor layer 200. In addition, the active layer 300 may be formed of a multi quantum well (MQW) structure, and may be formed by growing a GaN-based compound. In addition, the active layer 300 functions as a light emitting layer for emitting light.

The p-type nitride semiconductor layer 400 is stacked on the active layer 300. In addition, the p-type nitride semiconductor layer 400 may be formed of p-type gallium nitride (P-GaN).

The reflective electrode 100 for the micro light emitting device may be formed on the p-type nitride semiconductor layer 400. In addition, the reflective electrode 100 for a micro light-emitting device may supply an externally applied current to the p-type nitride semiconductor layer 400, reflect the light emitted from the active layer 300, Can be improved.

The reflector layer 500 may be formed on the lower surface of the substrate 10. In addition, the reflector layer 500 functions to reflect light entering through the substrate 10, thereby further improving the efficiency of the micro light emitting device.

Hereinafter, the reflective electrode 100 for a micro light emitting device according to an embodiment of the present invention will be described in detail.

FIG. 2 is a view for explaining a detailed configuration of a reflective electrode for a micro light emitting device according to an embodiment of the present invention, FIG. 3 is a view for explaining a reflective layer of a reflective electrode for a micro light emitting device, 6 is a view for explaining a p-type electrode layer of a reflective electrode for a micro light-emitting element. Fig.

2 to 6, the reflective electrode 100 for a micro light emitting device according to an embodiment of the present invention includes a transparent electrode layer 110, a reflective layer 120, and a p-type electrode layer 130.

The transparent electrode layer 110 is formed on the p-type nitride semiconductor layer 400. The transparent electrode layer 110 may be formed by depositing a transparent conductive oxide (TCO).

At this time, the deposition process of the transparent electrode layer 110 can be performed by chemical vapor deposition (CVD), electron beam evaporation, pulsed laser deposition, or sputtering .

In addition, the transparent electrode layer 110 may be formed of an ITO single layer formed by depositing indium tin oxide (ITO), but a transparent synthetic electrode having a multilayer thin film structure in which a metal layer is disposed between the conductive oxide layers composite electrode, TCE).

The reflective layer 120 is stacked on the transparent electrode layer 110 and reflects light emitted from the active layer 300 through the transparent electrode layer 110. The reflective layer 120 may be formed of an insulator including a conductive filament 125 electrically connecting the transparent electrode layer 110 and a p-type electrode layer 130, which will be described later.

Here, the conductive filament 125 of the reflective layer 120 may be formed on the entire or part of the reflective layer 120. Since the transparent electrode layer 110, the reflective layer 120, and the p-type electrode layer 130 are sequentially stacked And then applying an electric field to the reflective layer 120 through the transparent electrode layer 110 and the p-type electrode layer 130.

For this, when a voltage higher than a specific threshold value is applied to a material in the insulating layer 120, an electrical breakdown phenomenon occurs and electro-forming is performed. At first, the resistance state of the insulator is changed from a high resistance state to a low resistance state. It is preferable to be formed of a resistance change material which changes in a resistance state and exhibits conductivity.

That is, when a voltage higher than a threshold value is applied to the reflective layer 120 through the transparent electrode layer 110 and the p-type electrode layer 130, conducting filaments 125 are formed in the reflective layer 120 formed of the resistance- And a current flows through the conductive filament 125, so that the resistance state of the reflection layer 120 can be maintained in a low resistance state.

The resistance change material forming the reflective layer may be at least one selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), hafnium oxide (HfO 2 ), titanium dioxide (TiO 2 ), zinc oxide (ZnO), tungsten trioxide (WO 3), molybdenum oxide (MoO 3), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn x O y, Zr x O y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y, Ga x O y , boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x and Cu x O y , It is needless to say that the material may be used to form the reflective layer 120 of the present invention if it exhibits a resistance change characteristic.

Meanwhile, the reflection layer 120 may be formed of a distributed Bragg reflector (DBR) having a multilayer structure in which at least two resistance change materials are alternately repeatedly stacked for reflection of light. At this time, it is preferable that the two resistance change materials forming the reflective layer 120 have different refractive indexes.

Such a distributed Bragg reflector can greatly improve the reflectivity of light in a specific wavelength range, and in particular, reflectivity of light in the ultraviolet (UV) range can be improved depending on the thickness and number of the laminated resistance change material.

For example, as shown in FIG. 3, the reflective layer 120 is formed by forming a first reflective layer 121a made of any one of the above-described resistance changing materials on the transparent electrode layer 110, A second reflective layer 121b made of a resistance-change material different from the reflective layer 121a is formed. A third reflective layer 122a and a fourth reflective layer 122b are sequentially stacked on the second reflective layer 121b and a fifth reflective layer 123a and a sixth reflective layer 123b are formed thereon, May be formed as a laminated structure.

That is, the first reflection layer 121a and the second reflection layer 121b form a pair, the third reflection layer 122a and the fourth reflection layer 122b form another pair, and the fifth reflection layer 123a and the sixth reflective layer 123b form another pair.

Here, the first reflective layer 121a, the third reflective layer 122a, and the fifth reflective layer 123a are formed of the same resistance change material, and the second reflective layer 121b, the fourth reflective layer 122b, 123b may be provided with the same resistance change material.

The reflective layer 120 can improve the reflection efficiency in the ultraviolet (UV) region while having an improved reflection efficiency as compared with the conventional metal electrode.

For example, FIG. 4 shows reflectivity of a reflective electrode formed of silver (Ag) and reflectivity of a reflective layer (DBR) of a three-layer structure in which titanium dioxide (TiO 2 ) and aluminum oxide (Al 2 O 3 ) When the reflective electrode is formed using silver (Ag), there is little reflectance with respect to a wavelength of 330 nm or less. On the other hand, in the case of the reflective layer (DBR) according to the present invention, It can be confirmed that the reflectivity of the light-emitting layer is measured to be remarkably high.

5 shows the relationship between the reflectance of a reflective electrode formed of general silver (Ag) and the reflective layer (DBR) of a three-layered structure in which titanium dioxide (TiO 2 ) and aluminum oxide (Al 2 O 3 ) -Type electrode layer is shown in the figure.

In this case, as shown in FIG. 5, when the reflective electrode is formed using general silver (Ag), there is little reflectance for a wavelength of 330 nm or less. However, in the reflective layer DBR according to the present invention, It can be confirmed that the reflectance in the ultraviolet region of 330 nm or less is measured to be close to 100%.

The p-type electrode layer 130 is laminated on the reflective layer 120 to apply a current to the transparent electrode layer 110 through the conductive filament 125 of the reflective layer 120 and ultimately to form the transparent electrode layer 110, Type nitride semiconductor layer 400. The p-type nitride semiconductor layer 400 is formed of a nitride semiconductor. The p-type electrode layer 130 may be deposited or patterned to have the same width as the reflective layer 120 described above.

The p-type electrode layer 130 may be formed of a metal having electrical conductivity and may be formed of any one of chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) Lt; / RTI >

However, as shown in FIG. 6, the p-type electrode layer 130 may be formed of a single material, but it is preferable that different materials are sequentially stacked to form a plurality of layers. That is, when forming the p-type electrode layer 130, a metal material having properties excellent in adhesion to other substrates or other metals is formed first, and a metal material having a work function similar to the p-type nitride semiconductor layer 400 is formed thereon. And an ohmic contact is made to improve the current injection efficiency.

For example, in the p-type electrode layer 130, a first electrode layer 131 made of chromium (Cr) is formed on the reflective layer 120, a second electrode layer 132 made of nickel (Ni) And a third electrode layer 133 made of gold (Au) is formed thereon. Since the work function of nickel (Ni) has a work function of 5.15 eV and the work function of gold (Au) is 5.10 eV, ohmic contact with the p-type nitride semiconductor layer 400 described above is easier Lt; / RTI >

Therefore, the reflective electrode 100 for a micro light emitting device according to an embodiment of the present invention can improve the reflectivity in the ultraviolet (UV) region and prevent the reduction in the reflection efficiency of the micro light emitting device, Can also be improved.

7 is a view for explaining a method of manufacturing a reflective electrode for a micro light emitting device according to an embodiment of the present invention.

Referring to FIG. 7, a method of fabricating a reflective electrode for a micro light emitting device, which is performed to fabricate a reflective electrode for a micro light emitting device according to an embodiment of the present invention, will be described.

First, a transparent electrode layer is formed on the micro light-emitting device (S110).

At this time, the above-mentioned micro light emitting device may be formed in a structure in which an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially laminated on a substrate, and a transparent electrode layer is deposited on the above- can do.

In addition, the process of depositing the transparent electrode layer may be performed by chemical vapor deposition (CVD), electron beam evaporation, pulsed laser deposition, or sputtering, The transparent electrode layer may be formed of a transparent composite electrode (TCE) structure having a multilayer thin film structure in which a metal layer is disposed between the conductive oxide layers.

Next, a reflective layer is formed on the transparent electrode layer (S120).

At this time, the reflective layer is a distributed Bragg reflector (DBR) made of an insulator, and reflects light emitted from the active layer and introduced through the transparent electrode layer.

In addition, when a voltage higher than a specific threshold value is applied to a material in an insulator, an electro-forming process is performed while an electrical breakdown phenomenon occurs, so that the resistance state of a material which is an insulator initially changes from a high resistance state to a low resistance state And is formed of a resistance change material that exhibits conductivity.

The resistance change material forming the reflective layer may be at least one selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), hafnium oxide (HfO 2 ), titanium dioxide (TiO 2 ), zinc oxide (ZnO), tungsten trioxide (WO 3), molybdenum oxide (MoO 3), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn x O y, Zr x O y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y, Ga x O y , boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x and Cu x O y , It is needless to say that the material may be used to form the reflective layer 120 of the present invention if it exhibits a resistance change characteristic.

On the other hand, it is preferable that the two resistance change materials forming the reflective layer have different refractive indexes. By forming the reflective layer with the dispersive Bragg reflector, the reflectance of light in a specific wavelength range can be greatly improved, and the reflectivity of light in the ultraviolet (UV) range can be improved, for example.

Then, a p-type electrode layer is formed on the reflective layer (S130).

At this time, the p-type electrode layer may be formed as a single layer structure made of a single material, but any one of chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) It is preferable to form a plurality of layers.

Next, a conductive filament electrically connecting the transparent electrode layer and the p-type electrode layer is formed in the reflective layer (S140).

At this time, the conductive filament of the reflective layer may be formed by an electric field applied through the transparent electrode layer and the p-type electrode layer after the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially laminated.

That is, when a voltage equal to or higher than the threshold value is applied to the reflective layer through the transparent electrode layer and the p-type electrode layer, electro-forming is performed while electrical breakdown phenomenon occurs in the reflective layer formed of the above- And a current flows through the conductive filament thus formed, so that the resistance state of the reflection layer can be maintained in a low resistance state.

The conductive filament of the reflective layer enables electrical connection between the p-type electrode layer and the transparent electrode layer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

100: reflective electrode for a micro light emitting device
110: transparent electrode layer
120: reflective layer
130: p-type electrode layer
200: an n-type nitride semiconductor layer
300: active layer
400: a p-type nitride semiconductor layer
500: Reflector layer

Claims (15)

A reflective electrode provided in a micro light emitting device in which a substrate, an n-type semiconductor layer, an active layer and a p-type semiconductor layer are sequentially stacked,
A transparent electrode layer formed on the p-type semiconductor layer;
A reflective layer formed on the transparent electrode layer, the reflective layer including a conductive filament connecting the transparent electrode layer and the p-type electrode layer in an insulator that reflects light emitted from the active layer through the transparent electrode layer; And
And a p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer.
The method according to claim 1,
Wherein the conductive filament of the reflective layer
Wherein the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially stacked and then formed by an electric field applied through the transparent electrode layer and the p-type electrode layer.
The method according to claim 1,
Wherein,
Wherein the DBR is a distributed Bragg reflector (DBR) in which different resistance change materials are alternately repeatedly laminated.
The method of claim 3,
The resistance-changing material for forming the reflective layer may be,
Aluminum oxide (Al 2 O 3), silicon dioxide (SiO 2), hafnium oxide (HfO 2), titanium dioxide (TiO 2), zinc oxide (ZnO), antimony trioxide of tungsten (WO 3), molybdenum oxide (MoO 3), (ZnO), Sn x O y , Zr x O y , Co x O y , Cr x O y , and Zn x O y , which are doped with ZnO, Mn-doped tin oxide (MTO) V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y, Ga x O y, boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x, and Cu x O y .
The method according to claim 1,
The p-
Wherein the reflective layer is formed of a plurality of layers in which at least two or more materials selected from the group consisting of chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) electrode.
An n-type semiconductor layer laminated on a substrate;
An active layer stacked on the n-type semiconductor layer;
A p-type semiconductor layer laminated on the active layer;
A transparent electrode layer formed on the p-type semiconductor layer;
A reflective layer formed on the transparent electrode layer, the reflective layer including a conductive filament connecting the transparent electrode layer and the p-type electrode layer in an insulator that reflects light emitted from the active layer through the transparent electrode layer; And
And a p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflective layer.
The method according to claim 6,
Wherein the conductive filament of the reflective layer
Wherein the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially stacked and then formed by an electric field applied through the transparent electrode layer and the p-type electrode layer.
8. The method of claim 7,
Wherein,
Wherein the DBR is a distributed Bragg reflector (DBR) in which different resistance change materials are alternately repeatedly laminated.
The method according to claim 6,
The resistance-changing material for forming the reflective layer may be,
Aluminum oxide (Al 2 O 3), silicon dioxide (SiO 2), hafnium oxide (HfO 2), titanium dioxide (TiO 2), zinc oxide (ZnO), antimony trioxide of tungsten (WO 3), molybdenum oxide (MoO 3), (ZnO), Sn x O y , Zr x O y , Co x O y , Cr x O y , and Zn x O y , which are doped with ZnO, Mn-doped tin oxide (MTO) V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y, Ga x O y, boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x, and Cu x O y .
The method according to claim 6,
The p-
Wherein at least two materials among chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) and silver (Ag) are sequentially laminated.
A manufacturing method of a reflective electrode provided in a micro light emitting device in which a substrate, an n-type semiconductor layer, an active layer and a p-type semiconductor layer are sequentially laminated,
(1) forming a transparent electrode layer on the p-type semiconductor layer;
(2) forming a reflective layer on the transparent electrode layer to reflect light emitted from the active layer and flowing through the transparent electrode layer;
(3) forming a p-type electrode layer electrically connected to the transparent electrode layer through the reflective layer on the reflective layer; And
(4) forming a conductive filament inside the reflective layer to electrically connect the transparent electrode layer and the p-type electrode layer.
12. The method of claim 11,
The conductive filament of the reflective layer formed in the step (4)
Wherein the transparent electrode layer, the reflective layer, and the p-type electrode layer are sequentially stacked and then formed by an electric field applied through the transparent electrode layer and the p-type electrode layer.
12. The method of claim 11,
The reflective layer formed in the step (2)
Wherein the DBR is a distributed Bragg reflector (DBR) in which different resistance changing materials are alternately repeatedly laminated.
14. The method of claim 13,
In the step (2), the resistance-changing material for forming the reflective layer may be formed of,
Aluminum oxide (Al 2 O 3), silicon dioxide (SiO 2), hafnium oxide (HfO 2), titanium dioxide (TiO 2), zinc oxide (ZnO), antimony trioxide of tungsten (WO 3), molybdenum oxide (MoO 3), (ZnO), Sn x O y , Zr x O y , Co x O y , Cr x O y , and Zn x O y , which are doped with ZnO, Mn-doped tin oxide (MTO) V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, Ga x N y, Ga x O y, boron nitride (BN), Ni x N y , Si x N y , Al doped ZnO (AZO), Mg x Zn y O x, and Cu x O y .
12. The method of claim 11,
The p-type electrode layer formed in the step (3)
Wherein the reflective layer is formed of a plurality of layers in which at least two or more materials selected from the group consisting of chromium (Cr), nickel (Ni), gold (Au), aluminum (Al) Gt;
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