KR20190031946A - Semiconductor device package - Google Patents

Abstract

According to the present invention, a semiconductor device package comprises: a body including a cavity; a semiconductor device arranged inside the cavity; a light projection member arranged to wrap the semiconductor device; and a wavelength conversion layer arranged on the light projection member. The body includes a slope surface. The wavelength conversion layer includes a first wavelength conversion layer which is vertically overlapped with the semiconductor device and a second wavelength conversion layer which is arranged between a lateral surface of the semiconductor device and the slope surface of the body, and a thickness of the second wavelength conversion layer can be greater than the thickness of the first wavelength conversion layer. According to the present invention, it is possible to increase the degree of integration of a wavelength conversion material and can increase light conversion efficiency and light speed. Also, process efficiency can be increased and production costs can be reduced.

Description

Semiconductor device package < RTI ID = 0.0 >

The present invention relates to a semiconductor device package.

 Semiconductor devices including compounds such as GaN, AlGaN, InGaN, InAlGaN, GaAs, AlGaAs, InGaAs, GaP, AlGaInP and InP have many merits such as wide and easy bandgap energy, And various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using compound semiconductor materials such as Group 3-5 or 2-6 of semiconductors have been developed with thin film growth technology and device materials, , Blue, and ultraviolet rays. By using fluorescent materials or controlling the color, it is possible to realize white light with high efficiency. Also, it has lower power consumption, semi-permanent life time, quick response Speed, stability, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent Thereby absorbing light of various wavelength ranges from the gamma ray to the radio wave range, and thus can use light of various wavelength ranges from the gamma ray to the radio wave range. It also has the advantages of fast response speed, stability, environmental friendliness and easy control of device materials, so it can be easily used in power control or ultra-harmonic circuits or communication modules.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights and traffic lights, sensors for detecting gas and fire, and medical devices. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

In recent years, various developments have been made on the structure of a semiconductor device package for improving the luminous flux and the light extraction efficiency of semiconductor devices.

The present invention seeks to provide a semiconductor device package capable of improving light conversion efficiency.

The present invention seeks to provide a semiconductor device package that improves process efficiency and reduces manufacturing cost.

A semiconductor device package according to the present invention comprises: a body including a cavity; A semiconductor element disposed in the cavity; A translucent member disposed around the semiconductor element; And a wavelength conversion layer disposed on the translucent member, wherein the body includes an inclined surface, the wavelength conversion layer includes a first wavelength conversion layer disposed on a semiconductor element, a first wavelength conversion layer disposed on a side of the semiconductor element, And a thickness of the second wavelength conversion layer may be greater than a thickness of the first wavelength conversion layer.

The thickness of the second wavelength conversion layer may be 1: 2 or more to 1: 4 or less with respect to the first wavelength conversion layer thickness.

The first wavelength conversion layer may have a horizontal width equal to the horizontal width of the semiconductor element.

The wavelength conversion layer may include at least one curvature portion at a boundary between the first wavelength conversion layer and the second wavelength conversion layer.

The wavelength conversion layer may include a step at a boundary between the first wavelength conversion layer and the second wavelength conversion layer.

The wavelength conversion layer may include a wavelength conversion material, and the density of the wavelength conversion material on the wavelength conversion layer may be greater than the density of the wavelength conversion material below the wavelength conversion layer.

The translucent member may include a first region in which the first wavelength conversion layer is disposed and a second region in which the second wavelength conversion layer is disposed.

The translucent member may include at least one curvature portion at a boundary between the first region and the second region.

The translucent member may include a stepped portion at a boundary between the first region and the second region.

The light conversion efficiency and the light flux can be improved through the present invention.

Also, the degree of integration of the wavelength converting material can be increased through the present invention.

Further, the present invention can improve the process efficiency and reduce the manufacturing cost.

It should be understood, however, that the effects obtained by the present invention are not limited to the above-mentioned effects, and other effects not mentioned may be clearly understood by those skilled in the art to which the present invention belongs It will be possible.

1 is a perspective view of a semiconductor device package according to the present invention.
FIG. 2 is a cross-sectional view of the semiconductor device package according to the present invention taken along the line AA 'in FIG.
Fig. 3 shows the color coordinates of a conventional semiconductor device package and a semiconductor device package according to the present invention.
4 is a graph showing luminous flux versus phosphor content of the semiconductor device package of the present invention.
FIG. 5 is a cross-sectional view of a semiconductor device package according to the present invention including a step portion cut in a direction A-A 'in FIG.
6 is a cross-sectional x-ray of the semiconductor device package of the present invention.
7 is a photograph of a semiconductor device package to be compared and a top view of the semiconductor device package according to the present invention.
8 is a view for explaining a method of manufacturing a semiconductor device according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION The above-described objects, technical features and effect of the present invention will be more clearly understood from the following detailed description.

In the description of the present invention, terms such as first, second, etc. used below are merely reference numerals for distinguishing the same or corresponding components, and the same or corresponding components are used in the terms of first, But is not limited thereto.

The singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. The word "comprise" or "having" is used herein to mean that a feature, a number, a step, an operation, an element, a part, or a combination thereof is described in the specification, A step, an operation, an element, a part, or a combination thereof.

As used hereinafter, the terms " comprising "and / or" comprising "are used interchangeably with a component, step, operation and / Do not exclude the addition.

Hereinafter, a semiconductor device package according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a semiconductor device package according to the present invention, and FIG. 2 is a cross-sectional view of a semiconductor device package according to the present invention taken along line A-A 'in FIG.

1 to 2, a semiconductor device package according to the present invention includes a body 10, a semiconductor element 20, a translucent member 30, and a wavelength conversion layer 40.

The semiconductor device 20 may be a flip chip light emitting device.

The flip chip light emitting device may be a transmissive flip chip light emitting device that emits light in six directions, but the present invention is not limited thereto.

The body 10 reflects the side light of the semiconductor element 20 and the reflected light may enter the semiconductor element 20 again or be emitted to one side of the wavelength conversion layer 40.

The body 10 may include at least one of epoxy resin, polyimide resin, urea resin, and acrylic resin, but is not limited thereto.

The body 10 may comprise a reflective material, for example the reflective material may be TiO2 or SiO2.

The body 10 may include a cavity, and the semiconductor device 20 may be disposed in the cavity.

The body 10 may include a first side closer to the side of the semiconductor device 20, and a second side opposite the first side. The first side surface or the second side surface may have an inclined surface with respect to one surface of the body 10 and the translucent member 30 may be disposed between the first side surface and the side surface of the semiconductor element 20 And an inclined surface S corresponding to the inclined surface of the first side surface.

The light emitted from the side surface of the semiconductor element 20 may be reflected through the inclined surface S of the first side included in the body 10 to increase the light extraction efficiency.

The translucent member 30 may be disposed between the inclined surface S of the body 10 and the side surface of the semiconductor element 20. [

The translucent member 30 may be disposed on four sides and upper surfaces of the semiconductor element 20 and may be disposed between the body 10 and the semiconductor element 20 to surround the semiconductor element 20 .

The translucent member 30 may be disposed between the upper surface of the semiconductor device 20 and the lower surface of the wavelength conversion layer 40.

The translucent member 30 may have a refractive index different from that of the semiconductor element 20 and the refractive index of the translucent member 30 may be less than or equal to the refractive index of the semiconductor element 20.

Therefore, extraction efficiency of light emitted to the outside from the semiconductor device package can be improved.

The upper portion of the translucent member 30 may include a first region in which the first wavelength conversion layer 40a is disposed and a second region in which the second wavelength conversion layer 40b is disposed.

The translucent member 30 may include a stepped portion at a boundary between the first region and the second region.

The translucent member 30 may include at least one of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin, but is not limited thereto.

The translucent member 30 may be doped with a heat spreader in the resin.

      The heat spreader may include at least one of oxides, nitrides, fluorides, and sulfides having a material such as Al, Cr, Si, Ti, Zn, and Zr.

      The heat spreader may be defined as a powder particle, a grain, a filler, or an additive having a predetermined size.

    The translucent member 30 of the present invention may contain a filler.

The filler may be contained at 0 Wt /% or more to 3 Wt /% or less.

If the content of the filler is 3 Wt /% or more, the filler becomes insoluble in the thermal reliability of the semiconductor device package because the filler is an organic substance, so that the filler can be contained at 3 Wt /% or less.

Preferably, the translucent member of the present invention may contain fillers of 0 Wt /% or more and 1 Wt /% or less.

The present invention can achieve uniform color dispersion through the first wavelength conversion layer 40a and the second wavelength conversion layer 40b even if the content of the filler is 0Wt /%.

The wavelength conversion layer 40 is disposed on the translucent member 30 and may include a wavelength conversion material.

When the light incident on the wavelength conversion layer 40 in the semiconductor device 20 is emitted to the outside, the wavelength conversion layer 40 can convert the wavelength of the light emitted to the outside.

The wavelength conversion layer 40 includes a first wavelength conversion layer 40a disposed on the semiconductor element 20 and a second wavelength conversion layer 40b disposed between the side surface of the semiconductor element 20 and the inclined surface of the body 10 40b.

The second wavelength conversion layer 40b may contact the side surface of the semiconductor element 20 and may be disposed to cover a part of the side surface of the semiconductor element 20. [

When the second wavelength conversion layer 40b covers a part of the side surface of the semiconductor element 20, the light-converted path can be shortened when the light incident on the side surface of the semiconductor element 20 emits to the outside So that the light conversion efficiency can be improved.

The thicknesses of the first wavelength conversion layer 40a and the second wavelength conversion layer 40b may affect the light conversion efficiency of the semiconductor device package. The thickness d3 of the first wavelength conversion layer and the thickness d2 of the second wavelength conversion layer can be determined within a range in which light incident from the semiconductor element 20 can be sufficiently converted.

The thickness d1 of the semiconductor device package is equal to the thickness d1 of the body 10.

When the ratio of the thickness d3 of the first wavelength conversion layer 40a to the thickness d1 of the body 10 is a first ratio, the first ratio may be 8: 1 or more to 6: 1 or less.

It takes a long time to realize the first wavelength conversion layer 40a by precipitating the wavelength converting material. Therefore, in order to secure the process yield according to the process time, the first ratio should be 8: 1 or more.

In order to sufficiently convert the wavelength of the light emitted from the first wavelength conversion layer 40a to the outside when the light incident from the upper surface of the semiconductor element 20 is emitted to the outside in the first wavelength conversion layer 40a, The first ratio should not be more than 6: 1.

Preferably, the first ratio according to the present invention may be 7: 1.

When the ratio of the thickness d2 of the second wavelength conversion layer 40b to the thickness d1 of the body 10 is a second ratio, the second ratio may be 4: 1 or more to 2: 1 or less.

It takes a long time to realize the second wavelength conversion layer 40b by precipitating the wavelength converting material, so that the second ratio should be 4: 1 or more in order to secure the process yield according to the process time.

In order to sufficiently convert the wavelength of the light emitted from the second wavelength conversion layer 40b to the outside when the light incident from the side of the semiconductor device 20 is emitted to the outside in the second wavelength conversion layer 40b, The second ratio should be not more than 2: 1.

Preferably, the second ratio according to the present invention may be 3: 1.

The first wavelength conversion layer 40a and the second wavelength conversion layer 40b have different thicknesses.

The second wavelength conversion layer 40b has a larger thickness than the first wavelength conversion layer 40a.

The ratio of the thickness d2 of the second wavelength conversion layer to the thickness d3 of the first wavelength conversion layer may be 1: 2 or more and 1: 4 or less.

The ratio of the thickness d2 of the second wavelength conversion layer to the thickness d3 of the first wavelength conversion layer should be 1: 2 or more in order to ensure the process yield of the semiconductor device package.

When the light incident from the semiconductor element in the first wavelength conversion layer 40a and the second wavelength conversion layer 40b is emitted to the outside (in particular, light incident from the side of the semiconductor element 20 is emitted to the outside The ratio of the thickness d2 of the second wavelength conversion layer to the thickness d3 of the first wavelength conversion layer should be 1: 4 or less in order to sufficiently convert the wavelength of the incident light.

Preferably, the ratio of the thickness d2 of the second wavelength conversion layer to the thickness d3 of the first wavelength conversion layer may be 1: 3.

By having different thicknesses of the first wavelength conversion layer 40a and the second wavelength conversion layer 40b, the light conversion efficiency of the semiconductor device package according to the present invention can be improved.

The wavelength conversion layer 40 may include a step at a boundary between the first wavelength conversion layer 40a and the second wavelength conversion layer 40b.

The stepped portion may be arranged corresponding to the stepped portion included in the translucent member 30.

The width W1 of the first wavelength conversion layer 40a in the horizontal direction may be 0.8 or more to 1.1 or less of the width W2 of the semiconductor device in the horizontal direction.

Since the step portion can be disposed at the boundary between the first wavelength conversion layer 40a and the second wavelength conversion layer 40b, the width of the first wavelength conversion layer 40a in the horizontal direction The width W1 of the semiconductor device may be 0.8 or more to 1.1 or less of the width W2 of the semiconductor device in the horizontal direction.

The horizontal width W1 of the first wavelength conversion layer 40a should be 0.8 or larger than the horizontal width W2 of the semiconductor elements in order to secure the wavelength conversion ratio of the light incident from the upper surface of the semiconductor element 20 .

The width W1 of the first wavelength conversion layer 40a in the horizontal direction should be 1.1 or less of the width W2 of the semiconductor device in the horizontal direction in order to secure the wavelength conversion rate of the light incident on the side surface of the semiconductor element 20 do.

The wavelength conversion layer 40 may be made of a polymer resin containing a wavelength converting material.

The density of the wavelength converting material may increase as the wavelength conversion layer 40 moves toward the upper surface of the wavelength conversion layer 40.

A relatively heavier wavelength conversion material may be disposed toward the upper surface of the wavelength conversion layer 40 and a relatively lighter wavelength conversion material may be disposed in a direction in which the semiconductor device 20 is disposed.

Therefore, the density of the wavelength conversion material on the wavelength conversion layer 40 may be greater than the density of the wavelength conversion material below the wavelength conversion layer 40.

The polymer resin may include at least one of a transparent epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not limited thereto.

The wavelength converting material may be a phosphor.

The wavelength converting material may include, but not limited to, at least one of a sulfide-based, an oxide-based, or a nitride-based compound.

The phosphor may be variously selected to realize a color desired by the user.

For example, when the semiconductor element 20 emits light in the ultraviolet wavelength band, the green phosphor, the blue phosphor, and the red phosphor may be selected as the phosphor. When the semiconductor element 20 emits light of a blue wavelength band, a combination of a yellow phosphor, a red phosphor and a green phosphor or a combination of a yellow phosphor, a red phosphor and a green phosphor may be selected.

Referring to FIG. 3, it can be seen that the color coordinate increases in the semiconductor device package according to the present invention.

The conventional semiconductor device package to be compared and the semiconductor device package according to the present invention have the same wavelength conversion material content.

In the graph, points labeled a indicate the color coordinates of a conventional semiconductor device package,

b indicate the color coordinates of the semiconductor device package according to the present invention.

In the conventional semiconductor device package, the wavelength conversion layer is not disposed, and the wavelength conversion material is uniformly distributed on the light transmitting member.

When the content of the wavelength conversion material in the semiconductor device package is small, the color coordinate of the blue (x, y) coordinate is displayed in the color coordinate graph of FIG. 4, and when the content of the wavelength conversion material is large, Is displayed.

A conventional semiconductor device package is displayed in a blue (x, y) color coordinate, while a semiconductor device package according to the present invention having the same content of a wavelength conversion material is displayed in a red (x, y) color coordinate.

Therefore, it can be seen that the color coordinate increases with the content of the same wavelength conversion material in the semiconductor device package according to the present invention.

Thus, obtaining the effect of increasing the color coordinate by the same amount of the wavelength conversion material means that the same color coordinate can be realized with a smaller amount of the wavelength conversion material.

For example, a conventional semiconductor device package realizes natural white light with a wavelength conversion material content of not less than 70% and not more than 80% of the total volume, while the semiconductor device package according to the present invention has a total volume of not less than 20% and not more than 30 % ≪ / RTI > of the wavelength conversion material.

Therefore, the semiconductor device package according to the present invention has a low content of the wavelength converting material, so that the manufacturing cost can be reduced.

Referring to FIG. 4, it can be seen that the light flux is improved in the semiconductor device package according to the present invention.

When the same wavelength conversion material is contained, the luminous flux of the semiconductor device package according to the present invention is improved as compared with the conventional semiconductor device package.

Also, as the content of the wavelength conversion material increases, the light flux of the conventional semiconductor device package is no longer increased but saturation. However, in the semiconductor device package according to the present invention, the light flux linearly increases in proportion to the content of the wavelength conversion material .

Referring to FIG. 5, the wavelength conversion layer 40 may include one or more curvature portions at the boundaries of the first wavelength conversion layer 40a and the second wavelength conversion layer 40b.

The curvature portion may have a convex curvature with respect to the semiconductor element 20. [

The wavelength conversion layer 40 may be divided into a first wavelength conversion layer 40a and a second wavelength conversion layer 40b with a side surface of the semiconductor device 20 as a boundary and may have different thicknesses.

The wavelength conversion layer 40 may include a wavelength conversion material.

For example, the wavelength converting material may be a phosphor.

The wavelength conversion material may increase in density toward the surface of the wavelength conversion layer 40.

A relatively heavier wavelength conversion material may be disposed toward the surface of the wavelength conversion layer 40 and a light wavelength conversion material may be disposed in a direction in which the semiconductor device 20 is disposed.

The translucent member 30 may include a first region in which the first wavelength conversion layer 40a is disposed and a second region in which the second wavelength conversion layer 40b is disposed.

The translucent member 30 may include a curvature portion at the boundary between the first region and the second region.

The curvature portion included in the translucent member 30 may be disposed corresponding to the curvature portion included in the wavelength conversion layer 40.

The curvature portion may have a convex curvature with respect to the semiconductor element 20. [

The semiconductor device package including the curvature portion described above can obtain the same effect as the light conversion efficiency and the light flux enhancement as compared with the semiconductor device package including the step portion.

Referring to FIG. 6, an x-ray photograph of a semiconductor device package according to the present invention can clearly confirm the above-described configuration with reference to FIGS. 1 and 2 also on an x-ray.

In particular, the first wavelength conversion layer 40a and the second wavelength conversion layer 40b included in the wavelength conversion layer 40 can be visually distinguished.

Referring to FIG. 7, the wavelength conversion layer 40 disposed on the translucent member 30 according to the present invention can be identified.

7 (a) is a top view of a conventional semiconductor device package, and FIG. 7 (b) shows a top view of a semiconductor device package according to the present invention

7 (a) shows that the degree of integration of the wavelength converting material is low, and therefore, the light emitting efficiency of the light emitting diode of the present invention is lowered through the translucent member 30 The inside semiconductor element 20 can be visually confirmed.

On the other hand, FIG. 7 (b) shows that the wavelength conversion layer 40 is formed on the translucent member 30 because the degree of integration of the wavelength conversion material is high, so that the semiconductor element 20 inside the upper surface of the semiconductor device package can be visually confirmed it's difficult.

Referring to FIG. 8, a method of manufacturing a semiconductor device package according to the present invention will be described.

In explaining the method of manufacturing a semiconductor device package according to the present invention, description of the same components as those described with reference to FIGS. 1 to 2 and 5 will be omitted.

In addition, the semiconductor device package manufacturing method according to the present invention may be applied to a chip scale package process.

Referring to Fig. 8 (a), a body 10 including a cavity is disposed.

A plurality of bodies 10 may be disposed.

The body 10 may include at least one of epoxy resin, polyimide resin, urea resin, and acrylic resin, but is not limited thereto.

A cavity may be disposed in the body 10.

The width of the upper surface of the cavity may be different from the width of the lower surface of the cavity.

Referring to FIG. 8 (b), a semiconductor device 20 is disposed in a cavity.

The semiconductor device 20 may be a flip chip light emitting device.

The flip chip light emitting device may be a transmissive flip chip light emitting device in which light is emitted in six directions.

Referring to Fig. 8 (c), a translucent member 30 is provided in a cavity in which the semiconductor element 20 is disposed.

The translucent member 30 may be provided between the side of the semiconductor element 20 and the body 10 through a dispenser.

The translucent member 30 may be disposed on four sides and upper surfaces of the semiconductor element 20 and may be disposed between the body 10 and the semiconductor element 20 to surround the semiconductor element 20 .

The translucent member 30 may include at least one of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin, but is not limited thereto

The translucent member 30 includes a wavelength conversion material.

The wavelength converting material may be a phosphor. The wavelength converting material may include, but not limited to, at least one of a sulfide-based, an oxide-based, or a nitride-based compound. The phosphor may be variously selected to realize a color desired by the user.

For example, when the semiconductor element emits light in the ultraviolet wavelength range, the green phosphor, the blue phosphor, and the red phosphor may be selected as the phosphor. When the semiconductor element emits light of a blue wavelength band, a combination of a yellow phosphor, a red phosphor and a green phosphor or a combination of a yellow phosphor, a red phosphor and a green phosphor may be selected.

The translucent member 30 may include a heat spreader.

The translucent member 30 may contain a filler.

       Referring to Fig. 8 (d), the semiconductor element 20 on which the translucent member 30 is disposed is turned 180 degrees and cured.

     Since the surface tension is generated between the translucent member 30 and the curing frame in which the semiconductor element 20 is disposed, the translucent member 30 does not fall in the gravitational direction even if turned 180 degrees.

      The wavelength conversion material is precipitated in a direction opposite to the direction in which the semiconductor element 20 is arranged because the semiconductor element 20 in which the translucent member 30 is disposed is inverted by 180 degrees.

Referring to Fig. 8 (e), the wavelength conversion layer 40 is formed on the translucent member 30.

The wavelength conversion layer 40 includes a first wavelength conversion layer 40a vertically overlapped with the semiconductor element 20 and a second wavelength conversion layer 40b vertically overlapped with the side surface of the semiconductor element 20 and disposed on the translucent member 30. [ 2 wavelength conversion layer 40b.

The second wavelength conversion layer 40b may include a larger thickness than the first wavelength conversion layer 40a.

According to the semiconductor device package manufacturing method of the present invention, the semiconductor device package according to the present invention in which the wavelength conversion layer 40 is disposed on the translucent member 30 can be provided.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. .

Although the scope of the present invention will be defined by the appended claims, it is to be understood that any alterations or modifications derived from the claims, as well as other equivalents, .

10: Body
20: Semiconductor device
30:
40: Wavelength conversion layer
40a: first wavelength conversion layer
40b: second wavelength conversion layer

Claims (11)

A body including a cavity;
A semiconductor element disposed in the cavity;
A translucent member disposed around the semiconductor element; And
And a wavelength conversion layer disposed on the translucent member,
Wherein the body includes an inclined surface,
Wherein the wavelength conversion layer includes a first wavelength conversion layer vertically overlapping the semiconductor element, and a second wavelength conversion layer disposed between the semiconductor element side surface and the sloped surface of the body,
Wherein the thickness of the second wavelength conversion layer is larger than the thickness of the first wavelength conversion layer. The method according to claim 1,
Wherein a thickness of the second wavelength conversion layer is not less than 1: 2 and not more than 1: 4. The method according to claim 1,
The first wavelength conversion layer is vertically overlapped with the semiconductor element,
Wherein a width of the first wavelength conversion layer in a horizontal direction is 0.8 or more to 1.1 or less of a width in a horizontal direction of the semiconductor element. The method according to claim 1,
Wherein the wavelength conversion layer includes at least one curvature portion at a boundary between the first wavelength conversion layer and the second wavelength conversion layer. 5. The method of claim 4,
Wherein the curvature portion has a convex curvature with respect to the semiconductor element. The method according to claim 1,
Wherein the wavelength conversion layer includes a step at a boundary between the first wavelength conversion layer and the second wavelength conversion layer. The method according to claim 1,
Wherein the wavelength conversion layer comprises a wavelength converting material,
Wherein a density of the wavelength conversion material on the wavelength conversion layer is larger than a density of the wavelength conversion material below the wavelength conversion layer. The method according to claim 1,
Wherein the translucent member includes a first region in which the first wavelength conversion layer is disposed and a second region in which the second wavelength conversion layer is disposed. The method according to claim 1,
Wherein the translucent member includes at least one curvature portion at a boundary between the first region and the second region. 10. The method of claim 9,
Wherein the curvature portion has a convex curvature with respect to the semiconductor element. The method according to claim 1,
Wherein the translucent member includes a step at a boundary between the first region and the second region.

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