KR20190028759A - Display device and display device substrate - Google Patents

Abstract

A display device of the present invention includes: an electrode having a structure in which a silver or silver alloy layer is sandwiched by a conductive metal oxide layer; a light emitting layer that emits light at a driving voltage applied from the electrode; 1. A display device comprising: an array substrate having a channel layer made of a semiconductor and having an active element having the light emitting layer; a transparent substrate facing the array substrate; a black layer and a conductive layer stacked in order in the viewing direction; A display device substrate including a plurality of first touch sensing lines and a plurality of second touch sensing lines orthogonal to each other and defined by a first touch sensing line and a second touch sensing line in plan view, And a controller.

Description

Display device and display device substrate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device and a display device substrate having a light emitting layer including an organic electroluminescence or an LED and more particularly to a display device having a touch sensing function and a display device substrate used for the display device will be.

2. Description of the Related Art In recent years, a liquid crystal display device or a display device (an organic electroluminescence display device or an LED matrix display device) in which light emitting elements are arranged in a matrix is improved in resolution and thinner. In addition, mobile devices, such as smart phones and tablets, having a display device capable of achieving high picture quality while having a screen size of 5 inches or 8 inches are commercially available. In particular, an organic electroluminescence display device (hereinafter referred to as an organic EL) can contribute to the thinning of such a mobile device.

In an organic EL display device, an organic EL substrate provided with a white organic EL and a counter substrate arranged opposite to the organic EL substrate are provided, while having a color filter for realizing color display. An LED matrix display in which a red light emitting LED chip, a green light emitting LED chip and a blue light emitting LED chip are mounted on a small light emitting unit and a plurality of light emitting units are arrayed in a matrix on an array substrate Devices are also under development. As a LED, a blue light emitting diode having a high luminous efficiency is known, and a white LED having a green phosphor and a red phosphor disposed on a blue LED chip is sometimes used.

In a display device having a light emitting layer including an organic EL (Organic Electroluminescence) or an LED (Light Emitting Diode), in order to improve the brightness when the display device is viewed from the observer side, Of the pixel electrode) is indispensable. The lower electrode is an electrode located at a far position when viewing the display device from the observer side, and the upper electrode is an electrode located at a position closer to the observer relative to the lower electrode.

Patent Document 1 discloses a touch-sensitive display having a thinned encapsulation layer between an organic light emitting diode, a capacitive touch sensor electrode, and a control line carrying a touch sensor signal. Claim 2 of Patent Document 1 discloses a conductive grid covered with a black matrix. The control line is formed on the common substrate as shown in claim 9 of Patent Document 1. In Patent Document 1, a control line for carrying a touch sensor signal is provided on a substrate on which a pixel array is formed, as shown in Figs. 10 and 39, paragraphs [0031] and [0032]. As described in paragraphs [0064] to [0066] of Patent Document 1, a display control signal is carried on a line 640, and a sensor drive signal is also carried. In order to perform pixel (pixel) driving, a time division multiplex is proposed. Although the detailed description of the time division multiplex is not disclosed in Patent Document 1, the wiring structure in which the line 640 serves both as the display control and the sensor drive is complex as well as the time division driving technology, and the wiring structure The control used is complex. The need to prevent interference with pixel driving during capacitive touch sensor capacitance operation is described in paragraph [0066] of the patent document 1.

The line 640 is assumed to be the control line, but is not described in the patent document 1. Further, the "common substrate" described in claim 9 of Patent Document 1 is not clearly described in the specification to be specified as "common substrate". Further, in paragraph [0036] of Patent Document 1, it is described that the touch sensor wire is formed of a metal such as copper or gold. However, copper, silver and gold have no practical adhesion to a glass substrate or a plastic film, and Patent Document 1 discloses a practical technique for improving the adhesion of a metal such as copper, silver and gold to a substrate It is not proposed.

Patent Document 2 relates to a liquid crystal display device in which a touch sensor and a display device are integrated. Patent Document 2 discloses a technique of forming a touch screen on an array substrate by using a bypass tunnel or the like.

In Patent Document 3, not only a signal line (gate line and source line) and a pixel electrode connected to a polysilicon transistor but also a sense region for touch sensing, a drive-sense ground region and a bypass tunnel are arranged on the same array substrate There is a need. For this reason, in Patent Document 3, the array structure is very complicated, the parasitic capacitance is liable to increase, and the load in the manufacturing process of the array substrate is large. Patent Document 3 discloses a technique for forming an electrode used in a display device such as an organic EL device. Patent Document 3 discloses that the adhesiveness between the pure Ag film and the Ag alloy film is insufficient and the practicality is insufficient.

Patent Document 4 discloses the use of an aluminum-containing metal layer as a lower electrode of an organic EL device.

Patent Document 5 discloses a black substrate provided with a touch sensing wiring having a structure in which a copper-containing layer is sandwiched by an indium-containing layer on a black layer, and a method of manufacturing a black substrate. However, in Patent Document 5, a display device including a light emitting layer such as an organic EL or an LED is not considered, and a technical problem in a display device to which an array substrate having a light emitting layer is applied is not disclosed. In addition, the black substrate does not disclose a structure for performing touch sensing with two pairs of black wirings.

Patent Document 6 discloses a touch panel in which a black layer and a metal layer are laminated as a wiring structure. However, a display device provided with a light emitting layer and an active element made of an oxide semiconductor is not disclosed. Also, no structure is disclosed in which a copper alloy or a silver alloy is sandwiched between conductive metal oxides.

Japanese Patent No. 586471 Japanese Patent No. 5746736 Japanese Patent Application Laid-Open No. 2014-120487 Japanese Patent Application Laid-Open No. 2016-76418 Japanese Patent No. 5807726 Japanese Patent Application Laid-Open No. 2013-129183

In a display device having a light emitting layer including an organic EL or an LED, aluminum or an aluminum alloy is often used as a material of a reflective electrode (hereinafter, also referred to as a lower electrode). Similarly, aluminum or an aluminum alloy is generally used as a material for an electrode or wiring constituting a thin film transistor for driving a light emitting layer such as a light emitting diode, or a material for a touch sensing wiring. However, aluminum or aluminum alloy has a lower conductivity than silver or silver alloy, or copper or copper alloy.

Further, the material of the pixel electrode (which may be hereinafter referred to as a reflective electrode) is excellent in silver or an alloy in light reflectivity.

Further, as described above, silver or silver alloy, and copper or copper alloy have poor adhesion to a substrate or the like. Silver also has a drawback that it gives an adverse effect on the electrical characteristics of the constituent material located around the member composed of silver by migration or diffusion.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a display device using a silver or silver alloy or copper or a copper alloy for an electrode or wiring constituting a display device using an organic EL or a light emitting diode, And a display device and a display device substrate for realizing high picture quality.

A display device according to a first aspect of the present invention includes: an electrode having a structure in which a silver or silver alloy layer is sandwiched by a conductive metal oxide layer; a light emitting layer that emits light with a driving voltage applied from the electrode; An array substrate having an active element which has a channel layer made of an oxide semiconductor and drives the light emitting layer, and a second surface opposite to the first surface, the first surface being opposite to the array substrate A liquid crystal display device comprising: a transparent substrate; a first black layer and a first conductive layer stacked in this order on the second surface in the viewing direction from the second surface to the first surface; A plurality of first touch sensing wirings extending in parallel to each other and a second black layer and a second conductive layer stacked in this order in the viewing direction, A plurality of second touch sensing wirings extending in parallel to each other so as to be arranged in a second direction orthogonal to the first direction as viewed in a plan view and being positioned between the dicing wiring and the array substrate, A display device substrate having a plurality of pixels divided by one touch sensing wiring and the plurality of second touch sensing wirings; a display device substrate which detects a change in electrostatic capacitance between the first touch sensing wiring and the second touch sensing wiring, And a controller.

In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring are formed on the second surface, and the first touch sensing wiring and the second touch sensing wiring And the first touch sensing wiring and the second touch sensing wiring may be electrically insulated from each other.

In the display device according to the first aspect of the present invention, the first touch sensing wiring may be formed on the second surface, and the second touch sensing wiring may be formed on the first surface.

In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring are formed in order on the first surface in the observation direction, and the first touch sensing wiring An insulating layer may be provided between the wiring and the second touch sensing wiring, and the first touch sensing wiring and the second touch sensing wiring may be electrically insulated from each other.

In the display device according to the first aspect of the present invention, the oxide semiconductor is a metal oxide containing at least one selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium and cerium, And a bismuth metal oxide.

In the display device according to the first aspect of the present invention, the gate insulating layer may be formed of a composite oxide containing cerium oxide.

In the display device according to the first aspect of the present invention, at least the gate wiring among the plurality of wirings electrically connected to the active element is a layer selected from the group consisting of a silver layer, a silver alloy layer, a copper layer and a copper alloy layer And a three-layer structure sandwiched by the conductive metal oxide layer.

In the display device according to the first aspect of the present invention, the light emitting layer may include a light emitting diode layer.

In the display device according to the first aspect of the present invention, the light emitting layer may include an organic electroluminescence layer.

A display device substrate according to a second aspect of the present invention is a display device substrate used in a display device according to the first aspect of the present invention, wherein the first conductive layer and the second conductive layer are formed of a silver layer, a silver alloy layer, Layer and a copper alloy layer is sandwiched by a conductive metal oxide layer.

In the display device substrate according to the second aspect of the present invention, the conductive metal oxide layer may be formed of at least two kinds of metal oxides selected from the group consisting of indium oxide, zinc oxide, antimony oxide, tin oxide, gallium oxide and bismuth oxide Or may be formed of a complex oxide containing

In the display device substrate according to the second aspect of the present invention, the conductive metal oxide layer is formed of a complex oxide containing indium oxide, zinc oxide and tin oxide, and the indium (In) and zinc (In + Zn + Sn) of tin (Zn) and tin (Sn) is greater than 0.8 and the atomic ratio of Zn / Sn is greater than 1. [

In the display device substrate according to the second aspect of the present invention, the plurality of pixels may include a color filter.

According to the display device and the display device substrate according to the embodiment of the present invention, silver or silver alloy having high conductivity, or copper or copper alloy can be used for electrodes or wiring constituting a display device using organic EL or light emitting diodes , A good touch sensing function and a high image quality can be achieved.

1 is a block diagram showing a control section (a video signal control section, a system control section and a touch sensing control section) and a display section which constitute a display device according to the first embodiment of the present invention.
Fig. 2 is a partial view of the display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line A-A 'in Fig. 3;
Fig. 3 is a plan view of a counter substrate included in the display device according to the first embodiment of the present invention, and is a view of the display device from the observer side. Fig.
4 is a plan view showing a pattern of the first conductive layer constituting the first touch sensing wiring provided in the counter substrate according to the first embodiment of the present invention.
5 is a plan view showing a pattern of a second conductive layer constituting a second touch sensing wiring provided in the counter substrate according to the first embodiment of the present invention.
6 is a view showing a first touch sensing wiring, an insulating layer, and a second touch sensing wiring provided on the counter substrate according to the first embodiment of the present invention, and is an enlarged view showing a portion denoted by W1 in Fig. 2 Sectional view.
Fig. 7 is an enlarged view partially showing the display device according to the first embodiment of the present invention, and is a cross-sectional view taken along the line B-B 'in Fig. 3;
FIG. 8 is a partial view of a lower electrode (pixel electrode) constituting the display device according to the first embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by reference numeral W2 in FIG.
9 is an enlarged view partially showing a gate electrode constituting a display device according to the first embodiment of the present invention.
10 is a cross-sectional view partially showing a display device according to a second embodiment of the present invention.
11 is a sectional view partially showing a display device according to a third embodiment of the present invention.
Fig. 12 is a diagram showing a second touch sensing wiring constituting the display device according to the third embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by reference numeral W3 in Fig.
13 is a cross-sectional view partially showing a display device according to a fourth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the following description, the same or substantially the same functions and components are denoted by the same reference numerals, and the description thereof is omitted, simplified, or explained only when necessary. In the drawings, the sizes and ratios of the respective components are made different from the actual ones in order to make each component as large as can be recognized on the drawings. In addition, as shown in the drawings, some components such as a plurality of layers forming a channel layer of a semiconductor and a plurality of layers forming a conductive layer are omitted, if necessary.

In the following embodiments, the characteristic parts will be described. For example, the description of the parts of the display device according to the present embodiment that are different from those of the components used in the conventional display device will be omitted.

In the following description, a wiring, an electrode, and a signal relating to touch sensing may be simply referred to as a touch drive wiring, a touch detection wiring, a touch wiring, a touch electrode, and a touch signal. Further, the first touch sensing wiring and the second touch sensing wiring may be simply referred to as a touch sensing wiring. The voltage applied to the touch sensing wiring for performing the touch sensing drive is referred to as a touch drive voltage.

The first black layer and the second black layer may be simply referred to as a black layer, and the first conductive layer and the second conductive layer may be simply referred to as a conductive layer.

A voltage applied between the upper electrode and the lower electrode (hereinafter, the lower electrode is sometimes referred to as a pixel electrode or a reflective electrode) for driving the light emitting layer (organic EL or LED) is called a pixel driving voltage. Driving of the light emitting layer may be simply referred to as pixel driving.

(First Embodiment)

(Functional configuration of the display device DSP1)

Hereinafter, a display device DSP1 according to a first embodiment of the present invention will be described with reference to Figs. 1 to 9. Fig.

Fig. 1 is a block diagram showing a control section and a display section constituting the display device DSP1 according to the first embodiment of the present invention.

The control unit 120 has a known configuration and includes a video signal control unit 121 (first control unit), a touch sensing control unit 122 (second control unit), and a system control unit 123 (third control unit) have.

The video signal control unit 121 controls the image display on the display unit 110. [ Specifically, the video signal control unit 121 controls the voltage (pixel driving voltage) supplied between the upper electrode and the lower electrode provided on the array substrate 200 to control the voltage applied to the light emitting layer 92 (Pixel driving). Such pixel driving is performed in each of a plurality of light emitting layers 92 arranged in an array on the array substrate 200, and an image is displayed on the display portion 110. [

The touch sensing control unit 122 applies a touch sensing driving voltage to the second touch sensing wiring 2 and generates a voltage between the first touch sensing wiring 1 and the second touch sensing wiring 2 And the touch sensing is performed.

The system control unit 123 controls the video signal control unit 121 and the touch sensing control unit 122 to alternately perform pixel driving and detection of change in capacitance due to touch driving. That is, the system control section 123 can perform image display (pixel driving) and touch sensing drive in the display section 110 by time division driving. The system control section 123 may have a function of performing the above-described driving by making the frequencies of the pixel driving and the touch sensing drive different from each other, and the driving voltage of the pixel driving and the touch sensing driving may be made different from each other, Function. In the system controller 123 having such a function, for example, the frequency of noise from the external environment picked up by the display device DSP1 is detected, and a touch sensing drive frequency different from the noise frequency is selected. Thereby, the influence of noise can be reduced. In addition, in the system control section 123, a touch sensing driving frequency that matches the scanning speed of a pointer such as a finger or a pen may be selected.

The display device DSP1 having the above-described control unit 120 is a display device having a touch sensing function integrated with a touch sensing function and an image display function. The display device DSP1 uses a capacitive touch sensing technique using two wiring groups arranged through an insulating layer, that is, a plurality of first touch sensing wiring lines 1 and a plurality of second touch sensing wiring lines 2 have. For example, when a pointer such as a finger touches or comes close to a counter substrate (described later), a change in electrostatic capacitance occurring at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2 is detected , The position of a pointer such as a finger is detected.

(Structure of the display device DSP1)

Fig. 2 is a partial view of the display device DSP1 according to the first embodiment of the present invention, and is a sectional view taken along the line A-A 'in Fig. 3. Fig.

The display device DSP1 according to the present embodiment includes a display device substrate according to an embodiment to be described later. The "viewed in plan" described below means a plane viewed from a direction in which the observer observes the display surface (plane of the display device substrate) of the display device DSP1. The shape of the display portion of the display device according to the embodiment of the present invention, the shape of the pixel aperture defining the pixel, and the number of pixels constituting the display device are not limited.

In the embodiment described below in detail, the direction along the short side of the display portion is defined as X direction (first direction), the direction along the long side of the display portion is defined as Y direction (second direction) And the thickness direction of the substrate is defined as the Z direction, the display device will be described.

In the following embodiments, it is also possible to configure the display device by switching the X direction and the Y direction defined as described above, that is, defining the X direction as the second direction and defining the Y direction as the first direction do.

As shown in Fig. 2, the display device DSP1 includes an opposing substrate 100 (display device substrate) and an array substrate 200 bonded to the opposing substrate 100 so as to face each other. In the display device DSP1 shown in Fig. 2, an optical film having various optical functions, a cover glass for protecting the counter substrate 100, and the like are omitted.

(Structure of the counter substrate 100)

2, the counter substrate 100 includes a transparent substrate 40 having a first surface F and a second surface S opposite to the first surface F. As shown in FIG. The first surface (F) is a surface facing the array substrate (200). The second surface S is a surface facing the observer.

The substrate that can be used for the transparent substrate 40 may be a transparent substrate in a visible region, and a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, a plastic substrate, or the like can be used.

A plurality of first touch sensing wiring lines 1 and a plurality of second touch sensing wiring lines 2 are provided above the second surface S of the transparent substrate 40. An insulating layer I (touch wiring insulating layer) is provided between a plurality of first touch sensing wiring lines 1 and a plurality of second touch sensing wiring lines 2, The touch sensing wiring 2 is electrically insulated from each other by the insulating layer I.

Fig. 3 is a plan view of the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and is a view from the observer side P to the display device DSP1.

4 is a plan view showing a pattern of the first conductive layer constituting the first touch sensing wiring 1 provided in the counter substrate 100 according to the first embodiment of the present invention.

5 is a plan view showing a pattern of the second conductive layer constituting the second touch sensing wiring 2 provided in the counter substrate 100 according to the first embodiment of the present invention.

(Touch sensing wiring)

The plurality of first touch sensing wirings 1 are located above the second surface S, are arranged in the X direction, and extend in parallel to each other in the Y direction. At the end of the first touch sensing wiring 1 in the Y direction, a first terminal TM1 is provided. A plurality of first touch sensing wirings (1) form a first wiring pattern.

The plurality of second touch sensing wirings 2 (second wiring patterns) are located between the plurality of first touch sensing wirings 1 and the array substrate 200. In this embodiment, the second touch sensing wirings 2 . The second touch sensing wiring 2 has a sense wiring 2A and a lead wiring 2B. The sense wirings 2A are arranged in the Y direction and extend in parallel to each other in the X direction. The sense wiring 2A is connected to the lead wiring 2B on the outside of the display portion 110. [ The lead wirings 2B are arranged in the X direction and extend in parallel to each other in the Y direction. A second terminal TM2 is provided at an end of the lead wiring 2B in the Y direction. The plurality of second touch sensing wirings (2) form a second wiring pattern.

Each of the plurality of first touch sensing wirings 1 and each of the plurality of second touch sensing wirings 2 are electrically independent. The first touch sensing wiring 1 and the sense wiring 2A are orthogonal to each other in a plane viewed from the observer side P. [ The region partitioned by the plurality of first touch sensing wiring lines 1 and the plurality of sense wiring lines 2A is a pixel PX. The plurality of pixels PX are arranged in a matrix in the display section 110. [ The shape of the opening in the pixel PX may be a square pattern, a rectangular pattern, a parallelogram pattern, or the like. Further, the arrangement of the openings in the pixel PX may be an arrangement in which a moiré countermeasure is applied, or a zigzag arrangement.

The plurality of first terminals TM1 and the plurality of second terminals TM2 are connected to the touch sensing control section 122. [ Thereby, the touch sensing controller 122 is electrically connected to the first touch sensing wiring 1 and the second touch sensing wiring 2 through the first terminal TM1 and the second terminal TM2.

For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch driving electrode. The touch sensing control unit 122 detects a change in the capacitance C1 generated between the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal.

Also, the role of the first touch sensing wiring 1 and the role of the second touch sensing wiring 2 may be replaced. Specifically, the first touch sensing wiring 1 may be used as a touch driving electrode, and the second touch sensing wiring 2 may be used as a touch detecting electrode.

Also, the first touch sensing wiring 1 and the second touch sensing wiring 2 need not be used for touch sensing. A wiring not used for touch sensing may be thinned out of the plurality of first touch sensing wiring 1 and the plurality of second touch sensing wiring 2 except for the wiring used for touch sensing. That is, thinning driving may be performed.

Next, the case where the first touch sensing wiring 1 is driven for thinning will be described. First, all the first touch sensing wirings 1 are divided into a plurality of groups. The number of groups is smaller than the number of all the first touch sensing wirings (1). The number of ship players constituting one group, for example, six. Here, of all the wiring lines (six lines), for example, two wiring lines are selected (fewer than all the wiring lines, two <6). In one group, touch sensing is performed using the two selected wirings, and the potential in the remaining four wirings is set to the floating potential. Since the display device DSP1 has a plurality of groups, the touch sensing can be performed for each group in which the function of the wiring is defined as described above. Likewise, the second touch sensing wiring 2 may be subjected to thinning drive.

In the case where the pointer used for the touch is a finger or the case where the pointer is a pen, the area or the capacity of the pointer or the contact which comes into contact or approaches is different. Depending on the size of the pointer, the number of wires to be thinned can be adjusted. In a pointer with a fine tip such as a pen or a needle tip, a matrix of a high-density touch sensing wiring can be used by reducing the number of wiring thinnings. A matrix of high-density touch sensing wiring can be used for fingerprint authentication.

By performing the touch sensing drive for each group in this manner, the number of wires used for scanning or detection is reduced, so that the speed of touch sensing can be increased. In the example described above, the number of wirings constituting one group is 6. For example, one group is formed by a multiplier of 10 or more, touch sensing is performed using two wirings selected in one group . That is, the number of wirings to be thinned (the number of wirings serving as the floating potential) is increased, thereby reducing the density of the selective wirings used for the touch sensing (the density of the selective wirings with respect to the total wirings) Scanning or detection is performed, which contributes to reduction of power consumption and improvement of touch detection accuracy. Conversely, the number of wirings to be thinned can be reduced, the density of the selective wiring used for touch sensing can be increased, and scanning or detection can be performed by the selective wirings, for example, for fingerprint authentication or input by a touch pen .

The thinned wiring (wiring not used for touch sensing), for example, becomes an electrically excited state, that is, a potential becomes a floating state. The potential of the first touch sensing wiring 1 or the second touch sensing wiring 2 is set to the floating state in order to obtain the proximity distance between the surface of the display device DSP1 (surface facing the observer) and the pointer such as a finger It is possible. Either the first touch sensing wiring 1 or the second touch sensing wiring 2 may be grounded and reset after detecting the position of the pointer such as a finger or the like in order to improve the accuracy of the next detection signal Is set to 0V). Further, in order to improve the accuracy of the detection signal, a voltage for alternately inverting the phase of the touch driving voltage may be employed. The means for improving the accuracy of the touch detection signal is also effective when the pointer is an active pointer (for example, a pointer for generating a detection instruction signal from a pen-shaped pointer).

With respect to the floating pattern in the thinning drive described above, in the first touch sensing wiring 1 and the second touch sensing wiring 2, by switching the detection electrode and the driving electrode by driving the switching element, Touch sensing may be performed.

Further, the floating pattern in the thinning drive described above may be switched so as to be electrically connected to the ground (ground to the housing). In order to improve the S / N ratio of the touch sensing, the signal wiring of the active element such as the TFT (thin film transistor) may be grounded to the temporary ground (the housing or the like) when the touch sensing signal is detected.

There is also a case where a touch wiring having a relatively long time required for resetting the capacitance detected in the touch sensing control, that is, a touch wiring having a large time constant (product of capacitance and resistance value) in touch sensing is used. In this case, for example, in the arrangement of the touch wirings, the wirings for performing the hole and the wirings for the even wirings may alternately be used for touch sensing to perform driving in which the size of the time constant is adjusted.

Further, a plurality of touch wirings may be grouped and driven or detected. In the grouping drive of a plurality of touch wirings, a line-sequential drive method may be employed, and a batch detection drive method, which is also called a self-detection method, may be employed in units of groups. Further, parallel driving may be performed on a group basis. Further, in order to cancel the noise such as the parasitic capacitance, a difference detection method that takes a difference between the detection signals of the touch wirings close to or adjacent to each other may be employed. The touch sensing wiring located in the area near the frame part (the area outside the display part 110 and the area where the image is not displayed) tends to have lower sensitivity of touch sensing than the touch sensing wiring located at the center of the display part 110 have. Therefore, the sensitivity difference may be reduced by adjusting the width and shape of the touch sensing wiring.

In the touch sensing control unit 122 and the video signal control unit 121, the touch driving and the pixel driving can be controlled by time division driving. The frequency of the touch driving may be adjusted in accordance with the required speed of the touch input. The touch driving frequency can be higher than the pixel driving frequency. Since the touch timing by a pointer such as a finger is irregular and has a short time, it is preferable that the touch driving frequency is high.

Several means for differentiating the frequencies of the touch driving and the pixel driving are known. For example, in a display screen, a black display is inserted between a plurality of consecutive white displays (when there is an output of a video signal) for displaying an image, and touch sensing is performed during the black display period, It is possible to perform the touch sensing which is not affected by the noise related to the noise. In the period of black display, the frequency of the touch drive can be arbitrarily selected in various ways.

(Lamination structure of touch sensing wiring)

6 is a view showing the first touch sensing wiring 1, the insulating layer I and the second touch sensing wiring 2 provided on the counter substrate 100 according to the first embodiment of the present invention, 2 is an enlarged cross-sectional view showing a portion denoted by reference numeral W1 in Fig.

The direction in which the observer P observes the display device DSP1, that is, the direction from the second surface S of the transparent substrate 40 toward the first surface F is referred to as the observation direction OB, (The direction opposite to the Z direction shown in Fig. 2).

The plurality of first touch sensing wirings 1 have a structure in which the first black layer 16 and the first conductive layer 15 are stacked in order in the viewing direction OB. The plurality of second touch sensing wirings 2 have a structure in which the second black layer 26 and the second conductive layer 25 are stacked in order in the viewing direction OB. The second black layer 26 has the same structure as the first black layer 16. The second conductive layer 25 has the same structure as the first conductive layer 15. That is, the first touch sensing wiring 1 and the second touch sensing wiring 2 have the same layer structure.

The insulating layer I is provided above the second surface S and is disposed between the first touch sensing wiring 1 and the second touch sensing wiring 2. [

Since the first touch sensing wiring 1 and the second touch sensing wiring 2 each include a black layer, the first touch sensing wiring 1 and the second touch sensing wiring 2, which are orthogonal to each other in a lattice pattern, And functions as a black matrix to improve the display contrast.

In FIG. 6, each of the first touch sensing wiring 1 and the second touch sensing wiring 2 has a two-layer laminated structure composed of a black layer and a conductive layer, but the present invention is not limited to this structure. Each of the first touch sensing wiring 1 and the second touch sensing wiring 2 may be formed in a laminated structure having more layers than two layers. Further, a three-layer laminated structure in which a conductive layer is sandwiched between two black layers may be adopted.

The first conductive layer 15 has a three-layer structure in which, for example, a copper alloy layer of the metal layer 20 is sandwiched by the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 .

The line widths of the black layer and the conductive layer constituting each of the first touch sensing wiring 1 and the second touch sensing wiring 2 can be made substantially equal. Dry etching is performed using a patterned conductive layer as a mask after forming a conductive layer by using a known photolithography method so as to form a touch The sensing wiring can be formed. For example, the technique disclosed in Japanese Patent Application Laid-Open No. 2015-004710 can be applied.

(Conductive metal oxide layer)

The metal layer 20 constituting at least a part of the first conductive layer 15 and the second conductive layer 25 can be sandwiched between the conductive metal oxide layers 21 and 22. In other words, as the structure of the first conductive layer 15 and the second conductive layer 25, a three-layer structure composed of the first conductive metal oxide layer 21, the metal layer 20 and the second conductive metal oxide layer 22 Structure can be adopted. A metal such as nickel, zinc, indium, titanium, molybdenum, or tungsten may be formed on the interface between the first conductive metal oxide layer 21 and the metal layer 20 or between the second conductive metal oxide layer 22 and the metal layer 20, Or an alloy layer of these metals may be further inserted.

Specifically, examples of the material of the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 include materials selected from the group consisting of indium oxide, zinc oxide, antimony oxide, tin oxide, gallium oxide and bismuth oxide A composite oxide containing two or more kinds of metal oxides to be selected may be employed. By adjusting the composition of these metal oxides, the value of the work function can be adjusted, and the carrier emissivity in the case of employing the organic EL as the light emitting layer can be adjusted.

The amount of indium (In) contained in the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 needs to be more than 80 at%.

That is, the conductive metal oxide layer is formed of a composite oxide containing indium oxide, zinc oxide, and tin oxide, and the indium (In), zinc (Zn), and tin (Sn) Zn + Sn) is greater than 0.8, and the atomic ratio of Zn / Sn is greater than 1.

The amount of indium (In) is preferably more than 80 at%. The amount of indium (In) is more preferably more than 90 at%. If the amount of indium (In) is less than 80 at%, the resistivity of the conductive metal oxide layer to be formed becomes large, which is not preferable. When the amount of zinc (Zn) exceeds 20 at%, the alkali resistance of the conductive metal oxide (mixed oxide) is lowered, which is not preferable. In the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22, the atomic percent of the metal element in the mixed oxide (the count of only the metal element that does not count the oxygen element) is all. Antimony oxide or bismuth oxide may be added to the conductive metal oxide layer in order to prevent the diffusion of copper in the laminate structure, because metal antimony or metal bismuth hardly forms a solid solution region with copper.

When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 include tin oxide and zinc oxide, the amount of zinc (Zn) needs to be greater than the amount of tin (Sn). If the content of tin exceeds the zinc content, a trouble occurs in the wet etching in a subsequent process. In other words, a metal layer of copper or a copper alloy is easier to etch than the conductive metal oxide layer, and the first conductive metal oxide layer 21 and the metal layer 20, the second conductive metal oxide layer 22, and the metal layer 20 It becomes easy to make tea in width.

When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 include tin oxide and zinc oxide, the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 The amount of tin (Sn) contained is preferably in the range of 0.5 at% to 6 at%. In comparison with the indium element, by adding tin of 0.5 at% to 6 at% or less to the conductive metal oxide layer, the resistivity of the ternary mixed oxide film (conductive complex oxide layer) with indium, zinc and tin is made small . If the amount of tin exceeds 6 at%, the addition of zinc to the conductive metal oxide layer is also accompanied, so that the resistivity of the ternary mixed oxide film (conductive complex oxide layer) becomes excessively large. By adjusting the amounts of zinc and tin in the above range (0.5 at% or more and 6 at% or less), it is possible to adjust the resistivity to approximately 3 × 10 ^-4 Ωcm or more and 5 × 10 ^-4 Ωcm or less as a resistivity of the monolayer film of the mixed oxide film It is possible to converge within the range. A small amount of other elements such as titanium, zirconium, magnesium, aluminum, and germanium may be added to the mixed oxide. However, in the present embodiment, the specific resistance of the mixed oxide is not limited to the above range.

(Conductive layer)

The first conductive layer 15 and the second conductive layer 25 may be formed of a conductive material such as the metal layer 20. As the metal layer 20, for example, a copper layer, a copper alloy layer, a silver layer or a silver alloy layer, or an aluminum alloy layer (aluminum-containing layer) containing aluminum, furthermore gold, titanium, molybdenum, have. Since nickel is a ferromagnetic material, the film formation rate is lowered, but it can be formed by vacuum film formation such as sputtering. Chromium has the disadvantage of large environmental resistance and a large resistance value, but it can be used as a material for the metal layer according to the present embodiment. In order to obtain adhesion of the conductive layer to the transparent substrate 40 or the transparent resin layer, it is preferable that the conductive layer is made of copper, silver, or aluminum and is made of magnesium, calcium, titanium, molybdenum, indium, tin, zinc, neodymium, nickel, It is preferable to employ an alloy to which at least one metal element selected from the group is added.

As the metal layer used for the first conductive layer 15 and the second conductive layer 25 constituting each of the first touch sensing wiring 1 and the second touch sensing wiring 2, % Silver alloy can be used. In either of the first conductive layer 15 and the second conductive layer 25, a three-layer structure in which the silver alloy layer is sandwiched by a composite oxide layer containing indium oxide, zinc oxide and tin oxide can be used have.

In the three-layer laminated structure sandwiched between the conductive metal oxide layers, for example, magnesium or calcium added to copper or silver is selectively oxidized during the heat treatment and is liable to precipitate at the interface between the conductive metal oxide and the metal layer. Alternatively, magnesium oxide or calcium oxide is liable to precipitate on the surface or end face of the copper alloy or silver alloy by oxidation. This selective oxidation or precipitation suppresses the migration of copper or silver, and as a result, the reliability of the three-layer laminated structure can be improved. The amount of the metal element added to the metal layer 20 is preferably 4 at% or less because the resistance value of the copper alloy or silver alloy is not greatly increased. As the film forming method of the copper alloy or the silver alloy, for example, a vacuum film forming method such as sputtering can be used.

When a thin film of a copper alloy thin film, a silver alloy thin film, or an aluminum alloy is used as the metal layer 20, when the film thickness is 100 nm or more or 150 nm or more, almost no visible light is transmitted. Therefore, when the metal layer 20 of the present embodiment has a film thickness of, for example, 100 nm to 300 nm, sufficient light shielding property can be obtained. The film thickness of the metal layer 20 may exceed 300 nm. Further, as described later, the material of the conductive layer can also be applied to wirings and electrodes provided on an array substrate to be described later. In the present embodiment, a stacked structure in which a metal layer is sandwiched by a conductive metal oxide layer can be adopted as a structure of a wiring electrically connected to the active element, for example, as a structure of a gate electrode or a gate wiring .

When the metal layer 20 is a copper layer, a copper alloy layer, a silver layer, or a silver alloy, the above-described conductive metal oxide layer may be formed of two or more kinds selected from indium oxide, zinc oxide, antimony oxide, gallium oxide, bismuth oxide, And is preferably a composite oxide containing a metal oxide. The copper layer, the copper alloy layer, the silver layer or the silver alloy has low adhesion to the transparent resin layer or the glass substrate (transparent substrate) constituting the color filter. Therefore, when a copper layer, a copper alloy layer, a silver layer or a silver alloy copper layer is applied to a display device substrate, it is difficult to realize a practical display device substrate. However, the above-described complex oxide has a sufficient adhesion to color filters (colored patterns of a plurality of colors), black matrix BM (black layer) and glass substrate (transparent substrate) Is enough. Therefore, when a copper alloy layer or a silver alloy layer is applied to a display device substrate using a composite oxide, a practical display device substrate can be realized.

As the metal layer 20 used for the gate electrode and gate wiring constituting the thin film transistor, a silver alloy containing 1.5 at% of calcium added to silver can be used. A three-layer structure in which the silver alloy layer is sandwiched by a composite oxide layer containing indium oxide, zinc oxide and tin oxide can be used.

Copper, a copper alloy, silver, a silver alloy, or their oxides and nitrides generally do not have sufficient adhesion to a transparent substrate such as glass or a black matrix. Therefore, when the conductive metal oxide layer is not provided, peeling may occur at the interface between the touch sensing wiring and the transparent substrate such as glass, or at the interface between the touch sensing wiring and the black layer. When copper or a copper alloy is used as the first touch sensing wiring 1 and the second touch sensing wiring 2 having a fine wiring pattern, a conductive metal oxide layer is not formed as a base layer of a metal layer (copper or copper alloy) In the display device substrate (opposing substrate) not having a defect due to peeling, defects due to electrostatic failure may occur in the touch sensing wiring during the manufacturing process of the display device substrate, which is not practical. The electrostatic discharge destruction in the first touch sensing wiring 1 and the second touch sensing wiring 2 is carried out in a subsequent step of laminating a color filter, a black matrix or the like on a transparent substrate, a step of bonding the display substrate and the array substrate Static electricity accumulates in the wiring pattern by a process, a cleaning process, or the like, and causes pattern defects, disconnection, and the like due to electrostatic breakdown.

Copper, a copper alloy, or a silver or silver alloy has a high conductivity and is preferable as a wiring material. However, on the surface of the copper alloy, a copper oxide having no conductivity is formed over time, and electrical contact becomes difficult in some cases. Silver or silver alloys are prone to form sulfides or oxides. On the other hand, a stable ohmic contact can be realized by covering a copper alloy layer or a silver alloy layer with a composite oxide layer of indium oxide, zinc oxide, antimony oxide, tin oxide, or the like. When such a composite oxide layer is used, The electrical mounting of the transfer or the like in the third embodiment can be easily performed.

As the layer structure constituted by the first conductive metal oxide layer 21, the metal layer 20 and the second conductive metal oxide layer 22 applicable to the embodiment of the present invention, the following modifications are exemplified. For example, in a state in which oxygen is insufficient in ITO (Indium Tin Oxide) or IZTO (Indium Zinc Tin Oxide) containing indium oxide as a center substrate and Z is zinc oxide, A layer structure obtained by laminating these metal oxides on a metal layer such as molybdenum oxide, tungsten oxide, mixed oxide of nickel oxide and copper oxide, titanium oxide or the like such as aluminum alloy or copper alloy, . The three-layer structure in which the metal layer is sandwiched between the conductive metal oxide layers is advantageous in that continuous film formation can be achieved by a vacuum deposition apparatus such as a sputtering apparatus.

For example, from the viewpoint of collectively etching the silver alloy layer and the conductive metal oxide layer, a composite oxide containing zinc oxide or gallium oxide can be used for the conductive metal oxide layer that sandwiches the silver alloy. The lamination structure of the silver alloy layer and the conductive metal oxide layer can be formed by a known photolithography method and by one etching with one solution of etchant. For example, a composite oxide of indium oxide, gallium oxide, and antimony oxide can be used as the conductive metal oxide layer as the light-reflective pixel electrode of the organic EL described below. The composite oxide of indium oxide, gallium oxide and antimony oxide has a high work function. A laminated structure of a composite oxide of indium oxide, gallium oxide and antimony oxide and a silver alloy layer as an anode of an organic EL display device is suitable for a pixel electrode.

The first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 have barrier properties against copper or silver. In the structure in which the copper wiring or the silver wiring is sandwiched and supported by the conductive metal oxide, deterioration of the active element due to migration of copper or silver can be suppressed and it is preferable as the high-conductivity wiring for the active element.

(Black layer)

The first black layer 16 and the second black layer 26 function as a black matrix of the display device DSP1. The black layer is made of, for example, a colored resin in which a black color material is dispersed. Copper oxides and oxides of copper alloys are not sufficiently black and have low reflectance. For example, when the black layer is formed of a metal oxide, it has a light reflectance of approximately 10% to 30% in a visible region, and it is difficult to obtain a flat reflectance in a visible region and appears to be colored. The reflectance of the visible light at the interface between the black layer and the substrate such as glass or the transparent resin layer according to the present embodiment can be suppressed to approximately 3% or less, and high visibility can be obtained. The transparent resin includes an adhesive layer for attaching a protective glass to a display device.

As the black coloring material, a mixture of carbon, carbon nanotube, carbon nanohorn, carbon nanobrush or a plurality of organic pigments is applicable. For example, carbon is used as a main coloring material at a ratio of 51 mass% or more with respect to the total amount of the black coloring material. To adjust the reflection color, an organic pigment such as blue or red may be added to the black coloring material. For example, it is possible to improve the reproducibility of the black layer in the photolithography process by adjusting the concentration of the carbon contained in the photosensitive black coating liquid as the starting material (lowering the carbon concentration).

A black layer having a pattern having a width (thin line) of 1 to 9 占 퐉 can be formed (patterning) even when a large-sized exposure apparatus as a manufacturing apparatus for the display device DSP1 is used. The carbon concentration in the present embodiment is set in the range of 4 to 50 mass% with respect to the total solid content including the resin and the curing agent and the pigment. Here, the carbon concentration may exceed 50 mass% as the amount of carbon, but if the carbon concentration exceeds 50 mass% with respect to the total solid content, the coating film suitability tends to decrease. Further, when the carbon concentration is set to less than 4 mass%, sufficient black can not be obtained, and the reflected light generated in the underlying metal layer located below the black layer is largely visually observed, which may lower the visibility.

In the case of performing the exposure process in the subsequent photolithography process, the substrate to be exposed and the mask are aligned (aligned). At this time, the optical density of the black layer by permeation measurement can be made 2 or less, for example, by prioritizing alignment. In addition to carbon, a black layer may be formed by using a mixture of plural organic pigments as the color adjustment of black. The reflectance of the black layer is set so that the reflectance at the interface between the black layer and the substrate is 3% or less in consideration of the refractive index (about 1.5) of the substrate such as glass or transparent resin. In this case, it is preferable to adjust the content and type of the black colorant, the resin used for the colorant, and the film thickness. By optimizing these conditions, the reflectance at the interface between the substrate such as glass having a refractive index of about 1.5 and the black layer can be made 3% or less in the wavelength region of visible light, and low reflectance can be realized. It is possible to prevent the reflected light originating from the light emitted from the light emitting layer from entering the active element, for example, and malfunctioning. When the active element provided in the array substrate has sensitivity in the visible light region, the reflected light from the back surface of the conductive layer is incident on the active element, which may cause malfunction of the active element. By arranging the black layer on the opposite side (the backside of the conductive layer) close to the display function layer, it is possible to prevent malfunction of the active element due to incidence of reflected light.

Further, in consideration of the improvement of the visibility of the observer, it is preferable that the reflectance of the black layer is 3% or less. Further, the refractive index of the acrylic resin used in the color filter and the liquid crystal material is usually in the range of about 1.5 to 1.7. Further, a color filter including a plurality of colored pixels each of red, green, and blue may be disposed on a counter substrate.

(Structure of the array substrate 200)

Next, the structure of the array substrate 200 constituting the display device DSP1 will be described.

It is not necessary to use a transparent substrate as the substrate 45 of the array substrate 200. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, silicon, silicon carbide A semiconductor substrate such as silicon germanium, or a plastic substrate.

In the array substrate 200, the active element 68 formed on the fourth insulating layer 14, the fourth insulating layer 14, the fourth insulating layer 14, and the active element 68 A third insulating layer 13 and a gate electrode 95 formed on the third insulating layer 13 so as to face the channel layer 58 of the first insulating layer 13 and the channel layer 58 of the active element 68, And a planarization layer 96 formed on the second insulation layer 12 are stacked on the substrate 45 in this order.

In the planarization layer 96, a contact hole 93 is formed at a position corresponding to the drain electrode 56 of the active element 68. On the planarization layer 96, a bank 94 is formed at a position corresponding to the channel layer 58. The upper surface of the planarization layer 96, the inside of the contact hole 93, and the drain electrode (not shown) in the region between the banks 94 adjacent to each other, that is, The lower electrode 88 (pixel electrode) is formed so as to cover the pixel electrodes 56 and 56. In addition, the lower electrode 88 may not be formed on the upper surface of the bank 94.

A hole injection layer 91 is formed to cover the lower electrode 88, the bank 94, and the planarization layer 96. On the hole injection layer 91, a light emitting layer 92, an upper electrode 87, and a sealing layer 109 are sequentially laminated.

The lower electrode 88 has a structure in which a silver or silver alloy layer is sandwiched by a conductive metal oxide layer as described later.

2, reference numeral 29 denotes a light emitting region composed of a lower electrode 88, a hole injection layer 91, a light emitting layer 92, and an upper electrode 87.

The upper electrode 87 is, for example, a transparent conductive film in which a silver alloy layer having a thickness of 11 nm is sandwiched by a complex oxide having a thickness of 40 nm. The lower electrode 88 has a structure in which a silver alloy layer having a thickness of 250 nm is sandwiched by a composite oxide having a film thickness of 30 nm. It is also possible to apply the composite oxide layer to the conductive metal oxide layer to set the thickness of the silver alloy layer in the range of, for example, 9 nm to 15 nm, to form a three-layer stacked structure in which the silver alloy layer is sandwiched by the conductive metal oxide layer Structure is preferably used. In this case, a transparent conductive film having a high transmittance can be realized.

It is also possible to apply the composite oxide layer to the conductive metal oxide layer to set the thickness of the silver alloy layer within a range of, for example, 100 nm to 250 nm, or 300 nm or more, May be employed. In this case, it is possible to realize a reflective electrode having a high reflectance with respect to visible light.

As the material of the bank 94, an organic resin such as an acrylic resin, a polyimide resin, or a novolak phenol resin can be used. In the bank 94, an inorganic material such as silicon oxide, silicon oxynitride, or the like may be further stacked.

As the material of the planarization layer 96, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyamide resin, or the like may be used. A low dielectric constant material (low-k material) may also be used.

In order to improve the visibility, either the planarization layer 96, the sealing layer 109, or the substrate 45 may have a light scattering function. Alternatively, a light scattering layer may be formed above the substrate 45.

(Active element 68)

Fig. 7 is an enlarged view partially showing the display device DSP1 according to the first embodiment of the present invention, and is a cross-sectional view taken along the line B-B 'in Fig. 3. 7 shows an example of a structure of a thin film transistor (TFT) having a top gate structure used as an active element 68 connected to a pixel electrode. In FIG. 7, the counter substrate 100 and the sealing layer 109 are omitted.

The active element 68 includes a channel layer 58 and a drain electrode 56 connected to one end of the channel layer 58 (the first end, the left end of the channel layer 58 in FIG. 7) A source electrode 54 connected to the other end of the channel layer 58 (the second end, the right end of the channel layer 58 in Fig. 7), and the channel layer 58 via the third insulating layer 13 And a gate electrode 95 opposed to the gate electrode 58. As will be described later, the channel layer 58 is in contact with the gate insulating layer and is composed of an oxide semiconductor. The active element 68 drives the light emitting layer.

7 shows a structure in which the channel layer 58, the drain electrode 56 and the source electrode 54 constituting the active element 68 are formed on the fourth insulating layer 14. However, This structure is not limited. The active element 68 may be directly formed on the substrate 45 without providing the fourth insulating layer 14. [ A thin film transistor having a bottom gate structure may also be applied.

The source electrode 54 and the drain electrode 56 shown in Fig. 7 are formed simultaneously in the same step. The source electrode 54 and the drain electrode 56 are provided with a conductive layer having the same structure. In the first embodiment, as the structure of the source electrode 54 and the drain electrode 56, a three-layer structure of titanium / aluminum alloy / titanium, molybdenum / aluminum alloy / molybdenum, etc. can be adopted. Here, the aluminum alloy is an alloy of aluminum-neodymium.

The third insulating layer 13 located under the gate electrode 95 may be an insulating layer having the same width as the gate electrode 95. [ In this case, for example, dry etching is performed using the gate electrode 95 as a mask to remove the third insulating layer 13 around the gate electrode 95. Thus, an insulating layer having the same width as that of the gate electrode 95 can be formed. The technique of processing the insulating layer by dry etching using the gate electrode 95 as a mask is generally called self-alignment.

The driving of the organic EL or the LED by the thin film transistor having the channel layer formed of the oxide semiconductor is preferable to the driving by the thin film transistor having the channel layer formed of the polysilicon semiconductor.

For example, an oxide semiconductor called IGZO is formed collectively by vacuum film formation such as sputtering. After the formation of the oxide semiconductor, the heat treatment after the pattern formation of the TFT or the like is also performed collectively. For this reason, the fluctuation of electrical characteristics (for example, Vth) with respect to the channel layer is very small. In order to suppress variations in the luminance of the organic EL or LED driving, it is necessary to suppress the fluctuation of the Vth of the thin film transistor to a small range.

On the other hand, in the case of a thin film transistor having a channel layer formed of a polysilicon semiconductor, it is necessary to perform laser annealing for each transistor in the amorphous silicon which is a precursor of the thin film transistor. It causes it. From this viewpoint, it is preferable that the thin film transistor used in a display device having an organic EL or LED is a thin film transistor having a channel layer formed of an oxide semiconductor.

In addition, since the thin film transistor including the channel layer formed of an oxide semiconductor has very little leakage current, stability after input of a scanning signal or a video signal is high. A thin film transistor having a channel layer formed of a polysilicon semiconductor has a leakage current of 2 or more digits larger than that of a transistor of an oxide semiconductor. The leakage current is small because it leads to high-precision touch sensing.

As a material of the channel layer 58, for example, an oxide semiconductor called IGZO can be used. As the material of the oxide semiconductor constituting the channel layer 58, a metal oxide containing at least one element selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium and cerium and at least one of antimony and bismuth A material containing one metal oxide may be used.

In this embodiment mode, an oxide semiconductor containing indium oxide, gallium oxide, and zinc oxide is used. The material of the channel layer 58 formed of an oxide semiconductor may be a single crystal, a polycrystal, a microcrystalline, a mixture of microcrystalline and amorphous, or an amorphous. The film thickness of the oxide semiconductor may be in the range of 2 nm to 50 nm. The channel layer 58 may be formed of a polysilicon semiconductor.

Further, a structure in which two thin film transistors are stacked may be employed. In this case, a thin film transistor having a channel layer formed of a polysilicon semiconductor is used as the thin film transistor positioned in the lower layer. As the thin film transistor located on the upper layer, a thin film transistor having a channel layer formed of an oxide semiconductor is used. In a structure in which these two thin film transistors are stacked, a thin film transistor is arranged in a matrix in a plan view. In this structure, a high mobility is obtained by the polysilicon semiconductor, and a low leakage current can be realized by the oxide semiconductor. In other words, both the advantages of the polysilicon semiconductor and the advantages of the oxide semiconductor can be alleviated.

An oxide semiconductor or a polysilicon semiconductor can be used for a constitution of a complementary transistor having a p / n junction or a single channel transistor having only an n-type junction, for example. As a laminated structure of the oxide semiconductor, for example, a laminated structure in which an n-type oxide semiconductor and an n-type oxide semiconductor having different electric characteristics from the n-type oxide semiconductor are laminated may be employed. The n-type oxide semiconductor to be laminated may be composed of a plurality of layers. In the stacked n-type oxide semiconductor, the band gap of the underlying n-type semiconductor can be made different from the band gap of the n-type semiconductor located in the upper layer.

The upper surface of the channel layer may be covered with, for example, a different oxide semiconductor.

Alternatively, for example, a laminated structure in which a microcrystalline (close to amorphous) oxide semiconductor is laminated on a crystalline n-type oxide semiconductor may be employed. Here, microcrystalline refers to, for example, a microcrystalline oxide semiconductor film formed by thermally treating an amorphous oxide semiconductor formed in a sputtering apparatus at a temperature of 180 ° C or higher and 450 ° C or lower. Or a microcrystalline oxide semiconductor film formed in a state where the substrate temperature at the time of film formation is set at about 200 캜. The oxide semiconductor film of a microcrystalline shape is an oxide semiconductor film which can observe crystal grains of at least about 1 nm to 3 nm or larger than 3 nm by an observation method such as TEM.

By changing the oxide semiconductor from amorphous to crystalline, improvement in carrier mobility and improvement in reliability can be realized. The melting point of indium oxide or gallium oxide as an oxide is high. The melting point of antimony oxide or bismuth oxide is 1000 占 폚 or less, and the melting point of the oxide is low. For example, when a ternary complex oxide of indium oxide, gallium oxide and antimony oxide is employed, the crystallization temperature of the complex oxide can be lowered by the effect of antimony oxide having a low melting point. In other words, it is possible to provide an oxide semiconductor which is easily crystallized from an amorphous state to a microcrystalline state or the like. By increasing the crystallinity of the oxide semiconductor, carrier mobility and reliability can be improved.

As oxide semiconductors, complex oxides rich in zinc oxide, gallium oxide or antimony oxide can be used in view of ease of dissolution in wet etching in the subsequent process. For example, the atomic ratios of the target metal elements used for sputtering are In: Ga: Zn = 1: 2: 2, In: Ga: Zn = 1: : 1 or In: Ga: Zn = 1: 1: 1. Here, Zn can be substituted with, for example, Sb (antimony) or Bi (bismuth).

For example, a binary composite oxide of indium oxide and antimony oxide may be used at an atomic ratio of In: Sb = 1: 1. For example, a binary composite oxide of indium oxide and bismuth oxide may be used with an atomic ratio of In: Bi = 1: 1.

In the above atomic ratio, the content of In may be further increased.

The composition of the composite oxide is not limited to the above composition.

For example, Sn may be further added to the composite oxide. In this case, a complex oxide containing a quaternary compound including In ₂ O ₃ , Ga ₂ O ₃ , Sb ₂ O ₃ and SnO ₂ can be obtained, or a composite oxide containing In ₂ O ₃ , Sb ₂ O ₃ and SnO ₂ A composite oxide containing a composition of a ternary system is obtained, and it becomes possible to adjust the carrier concentration. SnO ₂ having a different valence from In ₂ O ₃ , Ga ₂ O ₃ , Sb ₂ O ₃ and Bi ₂ O ₃ serves as a carrier dopant.

For example, a target obtained by adding tin oxide to a ternary metal oxide including indium oxide, gallium oxide, and antimony oxide is used for sputtering deposition. As a result, the composite oxide having an improved carrier concentration can be formed. Similarly, a composite oxide having an improved carrier concentration can be formed by performing sputtering deposition using a target obtained by adding tin oxide to a ternary metal oxide such as indium oxide, gallium oxide, or bismuth oxide, for example.

However, if the carrier concentration is excessively high, the threshold value Vth of the transistor having the channel layer formed of the complex oxide tends to be negative (it is likely to become normally on). Therefore, it is preferable to adjust the addition amount of tin oxide so that the carrier concentration is less than 1 x 10 ¹⁸ cm ^-3 . The carrier concentration and the carrier mobility can be controlled by adjusting the deposition conditions of the composite oxide (oxygen gas used for the introduction gas, the substrate temperature, the deposition rate, etc.), the annealing conditions after the deposition and the composition of the composite oxide, Concentration or carrier mobility can be obtained. For example, increasing the composition ratio of indium oxide facilitates improving the carrier mobility. For example, the crystallization of the complex oxide is promoted by an annealing process in which a heat treatment is performed at a temperature of 250 ° C to 700 ° C, whereby the carrier mobility of the complex oxide can be improved.

A thin film transistor (active element) having a channel layer formed of an n-type oxide semiconductor and a thin film transistor (active element) having a channel layer formed of an n-type silicon semiconductor are arranged one by one in the same pixel, A light emitting layer such as an LED or an organic EL (OLED) may be driven so as to utilize the characteristics of the light emitting layer. When an LED or an organic EL (OLED) is used as the light emitting layer, an n-type polysilicon thin film transistor is employed as a driving transistor for applying a voltage (current) to the light emitting layer, and a switching transistor for transmitting a signal to the polysilicon thin film transistor Type oxide semiconductor thin film transistor can be employed.

The drain electrode 56 and the source electrode 54 may have the same structure. For example, a multilayered conductive layer can be used for the drain electrode 56 and the source electrode 54. [ For example, an electrode structure in which aluminum, copper, or an alloy layer thereof is inserted and supported in molybdenum, titanium, tantalum, tungsten, a conductive metal oxide layer, or the like can be employed. The drain electrode 56 and the source electrode 54 may be formed first on the fourth insulating layer 14 and the channel layer 58 may be formed on the two electrodes. The structure of the transistor may be a multi-gate structure such as a double gate structure.

The semiconductor layer or the channel layer may be adjusted in mobility or electron concentration in its thickness direction. The semiconductor layer or the channel layer may be a stacked structure in which different oxide semiconductors are stacked. The channel length of the transistor, which is determined by the minimum distance between the source electrode and the drain electrode, may be 10 nm or more and 10 占 퐉 or less, for example, 20 nm to 0.5 占 퐉.

The third insulating layer 13 functions as a gate insulating layer. Examples of such insulating layer materials include hafnium silicate (HfSiOx), silicon oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, zirconium oxide, gallium oxide, zinc oxide, hafnium oxide, lanthanum oxide, And the like are adopted. Cerium oxide has a high dielectric constant, and is firmly bonded to cerium and oxygen atoms. For this reason, it is preferable that the gate insulating layer is made of a composite oxide containing cerium oxide. Even when cerium oxide is employed as one of oxides constituting the composite oxide, it is easy to maintain a high dielectric constant even in an amorphous state. Cerium oxide has oxidizing power. Cerium oxide is capable of storing and releasing oxygen. Therefore, oxygen is supplied from the cerium oxide to the oxide semiconductor with the structure in which the oxide semiconductor and the cerium oxide are in contact with each other, so that oxygen deficiency of the oxide semiconductor can be avoided and a stable oxide semiconductor (channel layer) can be realized. In the structure in which nitride is used for the gate insulating layer, the above-described action does not occur. The material of the gate insulating layer may include a lanthanoid metal silicate represented by cerium silicate (CeSiOx). Or a lanthanum cerium composite oxide, and further, lanthanum cerium silicate.

The structure of the third insulating layer 13 may be a single layer film, a mixed film, or a multilayer film. In the case of a mixed film or a multilayer film, a mixed film or a multilayer film can be formed by a material selected from the above-mentioned insulating layer material. The film thickness of the third insulating layer 13 is selectable from within a range of 2 nm to 300 nm, for example. When the channel layer 58 is formed of an oxide semiconductor, the interface of the third insulating layer 13 in contact with the channel layer 58 can be formed in a state containing a large amount of oxygen (film forming atmosphere).

In a thin film transistor having a top gate structure in a manufacturing process of a thin film transistor, after forming an oxide semiconductor, a gate insulating layer containing cerium oxide can be formed in an introducing gas containing oxygen. At this time, the surface of the oxide semiconductor located under the gate insulating layer can be oxidized and the degree of oxidation of the surface thereof can be adjusted. In the thin film transistor having the bottom gate structure, since the step of forming the gate insulating layer is performed before the step of the oxide semiconductor, it is difficult to adjust the degree of oxidation of the surface of the oxide semiconductor. In the thin film transistor having the top gate structure, the oxidation of the surface of the oxide semiconductor can be promoted more than that of the bottom gate structure, and oxygen deficiency of the oxide semiconductor hardly occurs.

The plurality of insulating layers including the planarization layer 96, the second insulating layer 12, the third insulating layer 13, and the insulating layer (the fourth insulating layer 14) Or an organic insulating material. As the material of the insulating layer, silicon oxide, silicon oxynitride, or aluminum oxide can be used. As the structure of the insulating layer, a single layer or a plurality of layers including the above materials can be used. Or a structure in which a plurality of layers formed of different insulating materials are laminated. An acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyamide resin, or the like may be used for a part of the insulating layer in order to obtain an effect of planarizing the upper surface of the insulating layer. A low dielectric constant material (low-k material) may also be used.

On the channel layer 58, a gate electrode 95 is disposed through the third insulating layer 13. The gate electrode 95 may be formed to have the same layer structure by using the same material as the drain electrode 56 and the source electrode 54 described above. As the structure of the gate electrode 95, a structure in which a copper layer or a copper alloy layer is sandwiched by a conductive metal oxide, or a structure in which a silver or silver alloy is sandwiched by a conductive metal oxide can be adopted.

Fig. 9 is an enlarged view partially showing an example of the gate electrode 95 constituting the display device DSP1 according to the first embodiment of the present invention.

In the structure shown in Fig. 9, the metal layer 20 constituting the gate electrode 95 is formed of a copper layer, a copper alloy layer, or a silver or silver alloy. In the gate electrode 95, the metal layer 20 is sandwiched between the conductive metal oxide layers 97 and 98. As the material of the conductive metal oxide layers 97 and 98, a conductive metal oxide constituting the conductive metal oxide layers 21 and 22 described in the first embodiment can be used.

The surface of the metal layer 20 exposed at the end of the gate electrode 95 may be covered with a composite oxide containing indium. Alternatively, the entire gate electrode 95 may be covered with a nitride such as silicon nitride or molybdenum nitride so as to include the end (end surface) of the gate electrode 95. Alternatively, an insulating film having the same composition as that of the above-described gate insulating layer may be laminated to a thickness greater than 50 nm.

As a method for forming the gate electrode 95, dry etching or the like is performed only on the third insulating layer 13 located immediately above the channel layer 58 of the active element 68 prior to the formation of the gate electrode 95, The thickness of the third insulating layer 13 may be reduced.

An oxide semiconductor having a different electrical property may be further inserted into the interface of the gate electrode 95 in contact with the third insulating layer 13. [ Alternatively, the third insulating layer 13 may be formed of an insulating metal oxide layer containing cerium oxide or gallium oxide.

When a copper alloy is used for a part of the constitution of the gate electrode 95, a metal element or a semimetal element within a range of 0.1 at% to 4 at% with respect to copper can be added. By adding the element to copper in this way, the effect of suppressing the migration of copper can be obtained. In particular, an element that can be placed at the lattice position of copper by substituting a part of the copper atom in the crystal (grain) of the copper layer and an element that is deposited at the grain boundary of the copper layer and inhibits the movement of copper atoms in the vicinity of the grain of copper Are all added to copper. Alternatively, in order to suppress the movement of copper atoms, it is preferable to add copper (which is larger in atomic weight) than copper atoms to copper. Further, it is preferable to select an additive element which is less likely to deteriorate the conductivity of copper with an addition amount within a range of 0.1 at% to 4 at% with respect to copper. Further, in consideration of vacuum film formation such as sputtering, an element whose deposition rate such as sputtering is close to copper is preferable. The technique of adding an element to copper as described above can also be applied to a case where copper is replaced with silver or aluminum, for example. In other words, a silver alloy or an aluminum alloy may be used instead of the copper alloy.

The addition of an element which can be placed at the lattice position of copper in the crystal of the copper layer to substitute a part of the copper atom in the copper at the lattice position of the copper is a metal or a half metal which forms copper and solid solution near room temperature It is added to copper. Examples of the metal which can easily form copper and solid solution include manganese, nickel, zinc, palladium, gallium, gold (Au) and the like. An element which is deposited on the grain boundary of the copper layer and inhibits the movement of copper atoms in the vicinity of the grain of the copper is added to the copper. In other words, a metal or semi-metal which does not form a solid solution with copper is added near room temperature. A variety of materials can be mentioned for metals or semi-metals that do not form copper and solid solutions or are difficult to form copper and solid solutions. For example, high melting point metals such as titanium, zirconium, molybdenum, and tungsten; and elements called semi-metals such as silicon, germanium, antimony, and bismuth. The alloy element may be used as an additive element added to the silver alloy.

Copper and silver have a reliability problem in terms of migration. By adding the above metal or semimetal to copper, the reliability can be supplemented. By adding 0.1 at% or more of the above metal or semi-metal to copper or silver, an effect of suppressing migration is obtained. However, when the above metal or semi-metal is added in a content exceeding 4 at% with respect to copper or silver, the deterioration of the conductivity of copper or silver becomes remarkable, and the advantage of selecting a copper alloy or a silver alloy is not obtained.

(Light emitting layer 92)

As shown in Fig. 7, the array substrate 200 includes a light-emitting layer 92 (organic EL layer) which is a display functional layer. The hole injected from the anode (for example, the upper electrode) and the electrons injected from the cathode (for example, the lower electrode and the pixel electrode) are recombined when an electric field is applied between the pair of electrodes, And is a display functional layer that emits light.

The light-emitting layer 92 contains a material having at least light-emitting properties (light-emitting material), and preferably a material having an electron-transporting property. When the hole injection layer 91 is formed on the lower electrode 88 (anode), the light emitting layer 92 is formed between the anode and the cathode. The hole injection layer 91 and the upper electrode 87 (negative electrode). When the hole transporting layer is formed on the anode, the light emitting layer 92 is formed between the hole transporting layer and the cathode. The roles of the upper electrode 87 and the lower electrode 88 can be interchanged.

The film thickness of the light emitting layer 92 is arbitrary as long as it does not significantly impair the effect of the present invention, but it is preferable that the film thickness is large in view of the fact that defects are hardly generated in the film. On the other hand, when the film thickness is small, the driving voltage is preferably low. Therefore, the thickness of the light-emitting layer 92 is preferably 3 nm or more, more preferably 5 nm or more, and further preferably 200 nm or less, more preferably 100 nm or less.

The material of the light emitting layer 92 is not particularly limited as long as it emits light at a desired wavelength and does not impair the effect of the present invention, and known light emitting materials can be applied. The light emitting material may be either a fluorescent light emitting material or a phosphorescent light emitting material, but a material having good light emitting efficiency is preferable, and a phosphorescent light emitting material is preferable from the viewpoint of internal quantum efficiency.

Examples of the light emitting material that emits blue light include naphthalene, perylene, pyrene, anthracene, coumarin, chrysene, p-bis (2-phenylethenyl) benzene and derivatives thereof. Examples of the luminescent material that gives green luminescence include quinacridone derivatives, coumarin derivatives, and aluminum complexes such as Al (C ₉ H ₆ NO) ₃ .

Examples of the light-emitting material that emits red light include a compound based on DCM (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran), a benzopyran derivative, a rhodamine derivative, benzothioxane Tin derivatives, and azabenzothioxanthone.

The configuration of the organic EL layer constituting the light emitting layer 92, the light emitting material, and the like are not limited to the above materials.

7, the light emitting layer 92 is formed on the hole injection layer 91 and is driven by a drive voltage applied between the upper electrode 87 and the lower electrode 88. [

The lower electrode 88 has a structure in which the reflective layer 89 and the conductive metal oxide layers 97 and 98 are laminated. An electron injection layer, an electron transport layer, a hole transport layer, and the like may be interposed between the upper electrode 87 and the lower electrode 88 in addition to the light emitting layer 92.

As the hole injection layer 91, a high melting point metal oxide such as tungsten oxide or molybdenum oxide can be used. As the reflective layer 89, a silver alloy or an aluminum alloy having a high reflectance of light can be applied. In addition, the conductive metal oxide such as ITO has poor adhesion with aluminum. In the case where the interface of the electrode or the contact hole is, for example, ITO and an aluminum alloy, electrical connection failure is liable to occur. The silver or silver alloy has good adhesion with a conductive metal oxide such as ITO, and a conductive metal oxide such as ITO is easy to obtain an ohmic contact.

8 is a partial view showing the lower electrode 88 (pixel electrode) constituting the display device DSP1 according to the first embodiment of the present invention. The portion indicated by the reference symbol W2 in Fig. Fig.

8, in order to suppress the migration of silver in the present embodiment, the lower electrode 88 is formed so that a silver or silver alloy layer (reflection layer 89) is sandwiched between the conductive metal oxide layers 97 and 98 Layer structure. As the material of the conductive metal oxide layers 97 and 98, a conductive metal oxide constituting the conductive metal oxide layers 21 and 22 described in the first embodiment can be used.

When the silver alloy layer is applied to a light-reflective pixel electrode (lower electrode), the thickness of the silver alloy layer can be selected from the range of, for example, 100 nm to 500 nm. If necessary, the film thickness may be formed thicker than 500 nm. When the thickness of the silver alloy layer is, for example, 9 nm to 15 nm, a silver alloy layer may be used for the light-transmitting upper electrode or the counter electrode.

When a liquid crystal layer is used in place of the light emitting layer 92 (organic EL layer), the thickness of the silver alloy layer is set to a thickness of 100 nm to 500 nm, so that the silver alloy layer is used as the pixel electrode ), And a reflection type liquid crystal display device can be realized.

In this embodiment, a composite oxide of indium oxide, gallium oxide, and antimony oxide is used as the conductive metal oxide. As the material of the silver alloy layer, a silver alloy functioning as a conductive layer can be applied. As the additive element added to silver, one or more metal elements selected from the group consisting of magnesium, calcium, titanium, molybdenum, indium, tin, zinc phthalo green pigment, neodymium, nickel, antimony, bismuth, have. The silver alloy layer of this embodiment used a silver alloy to which 1.5 at% calcium was added to silver. Calcium is selectively oxidized by heat treatment or the like in a subsequent step in a structure in which a silver alloy is sandwiched between the conductive metal oxides. By the formation of such an oxide, the reliability of the structure in which the silver alloy layer is sandwiched and supported by the conductive metal oxide layer can be improved. Further, by covering the structure in which the silver alloy layer is sandwiched and supported by the conductive metal oxide layer by the nitride such as silicon nitride or molybdenum nitride, the reliability can be further improved.

The above-described counter substrate 100 and the array substrate 200 are bonded to each other through the first transparent resin layer 108 as shown in Fig.

In the sealing portion (not shown) where the counter substrate 100 and the array substrate 200 are bonded to each other, the conduction of conduction from the counter substrate 100 to the array substrate 200 is controlled by changing the thickness of the seal portion Direction. The counter substrate 100 and the array substrate 200 can be made conductive by disposing a conductor selected from an anisotropic conductive film, a minute metal sphere, or a resin film covered with a metal film on the sealing portion.

(Modification of First Embodiment)

Further, in the above-described embodiment, a structure adopting the organic electroluminescence layer (organic EL) as the light emitting layer 92 has been described. The light emitting layer 92 may be an inorganic light emitting diode layer. The light emitting layer 92 may have a structure in which inorganic LED chips are arranged in a matrix. In this case, the minute LED chips each emitting red light, green light, and blue light may be mounted on the array substrate 200. As a method for mounting the LED chip on the array substrate 200, the face-down mounting may be performed.

When the light emitting layer 92 is formed of an inorganic LED, a blue light emitting diode or a blue light emitting diode is disposed on the array substrate 200 (substrate 45) as the light emitting layer 92. After the nitride semiconductor layer and the upper electrode are formed, a green phosphor is laminated on a green pixel, and a red phosphor is laminated on a red light emitting pixel. As a result, an inorganic LED can be easily formed on the array substrate 200. When such a phosphor is used, green light emission and red light emission can be obtained from each of the green phosphor and the red phosphor by the excitation by the blue light generated from the blue-violet light emitting diode.

Alternatively, the ultraviolet light emitting diode may be disposed on the array substrate 200 (substrate 45) as the light emitting layer 92. In this case, after the nitride semiconductor layer and the upper electrode are formed, a blue phosphor is laminated on the blue pixel, a green phosphor is laminated on the green pixel, and a red phosphor is laminated on the red pixel. As a result, an inorganic LED can be easily formed on the array substrate 200. When such a phosphor is used, a green pixel, a red pixel or a blue pixel can be formed by a simple method such as a printing method. These pixels are preferably adjusted in size from the viewpoint of the light emission efficiency and the color balance of each color.

In the above-described embodiment, the first touch sensing wiring 1 and the second touch sensing wiring 2 are disposed above the second surface S, respectively. The present invention is not limited to this structure. For example, when one of the first touch sensing wiring 1 and the second touch sensing wiring 2 is arranged on the second surface S and the other wiring is arranged on the first surface F . Also, the first touch sensing wiring 1 and the second touch sensing wiring 2 may be disposed on the first surface F. Such a structure will be described below.

(Second Embodiment)

Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified.

10 is a sectional view partially showing the display device DSP2 according to the second embodiment of the present invention. In the display device DSP2, an organic EL is used as a display functional layer (light emitting layer).

The counter substrate 300 constituting the display device DSP2 of the second embodiment includes a transparent substrate 42 having a first surface F and a second surface S opposite to the first surface F ). On the second surface (S), a plurality of first touch sensing wirings (1) are provided. On the first surface (F), a plurality of second touch sensing wirings (2) are provided. That is, the second touch sensing wiring 2 is located between the first touch sensing wiring 1 and the array substrate 400. A plurality of second touch sensing wirings (2) and a first surface (F) are covered with a second transparent resin layer (105). In the structure shown in Fig. 10, the first transparent resin layer 108 and the second transparent resin layer 105 are bonded.

In the touch sensing drive, a change in the capacitance C2 at the intersection where the first touch sensing wiring 1 and the second touch sensing wiring 2 are orthogonal to each other is detected. Each of the plurality of first touch sensing wiring 1 and the plurality of second touch sensing wiring 2 is electrically independent. The first touch sensing wiring 1 and the second touch sensing wiring 2 are orthogonal to each other in plan view. For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch driving electrode. The touch sensing control unit 122 detects a change in the electrostatic capacitance C2 generated between the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal.

Also, the role of the first touch sensing wiring 1 and the role of the second touch sensing wiring 2 may be replaced. Specifically, the first touch sensing wiring 1 may be used as a touch driving electrode, and the second touch sensing wiring 2 may be used as a touch detecting electrode.

As the structure of each of the first touch sensing wiring 1 and the second touch sensing wiring 2, the same structure as the sectional structure shown in Fig. 6 described in the first embodiment can be adopted. The first touch sensing wiring 1 has a structure in which the first black layer 16 and the first conductive layer 15 are laminated in order. As the structure of the first conductive layer 15, for example, a copper alloy layer or a silver alloy layer, which is a metal layer 20, is embedded in the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 Three-layer structure. The first touch sensing wiring 1 and the second touch sensing wiring 2 orthogonal to each other in a lattice form also serve as a black matrix for improving display contrast.

In the second embodiment, the active element 68 has the same top gate structure as that of the first embodiment. The channel layer of the second embodiment is also formed of an oxide semiconductor as in the first embodiment. From the viewpoint of electron mobility of the transistor, a first layer composed of an active matrix having a channel layer formed of a polysilicon semiconductor and a second layer composed of an active matrix having a channel layer formed of an oxide semiconductor are stacked It is preferable to adopt a structure in which In the structure in which the first layer and the second layer are stacked as described above, for example, an active element (first layer) having a channel layer formed of a polysilicon semiconductor is provided with a carrier ) Is injected. Further, an active element (second layer) having a channel layer formed of an oxide semiconductor is used as a switching element for selecting an active element having a channel layer formed of a polysilicon semiconductor. A silver alloy layer or a copper alloy layer sandwiched between the conductive metal oxide layers may be used for the power source line for emitting the organic EL layer electrically connected to the driving element. For this structure, for example, the wiring structure shown in Fig. 9 is used. It is preferable to apply a silver alloy or a copper alloy having a good conductivity to a wiring connected to an active element such as a power line.

In the second embodiment, the metal layer 20, which is a copper alloy, is used for the gate electrode 95. The metal layer 20 constituting the gate electrode 95 is sandwiched between the first conductive metal oxide layer 97 and the second conductive metal oxide layer 98 as shown in Fig. The material used for the gate insulating layer which is the third insulating layer 13 is the same as that of the first embodiment.

(Third Embodiment)

Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

In the third embodiment, the same members as those of the first embodiment and the second embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.

11 is a sectional view partially showing the display device DSP3 according to the third embodiment of the present invention.

The counter substrate 500 constituting the display device DSP3 of the third embodiment has a first surface F and a transparent substrate 44 having a second surface S opposite to the first surface F ). On the second surface S, the touch sensing wiring is not provided. A plurality of first touch sensing wirings 1 and a plurality of second touch sensing wirings 1 are sequentially formed on the first surface F in the observation direction OB (see Fig. 6, opposite to the Z direction) 2 are formed. That is, the second touch sensing wiring 2 is located between the first touch sensing wiring 1 and the array substrate 600. A plurality of second touch sensing wirings (2) and a first surface (F) are covered with a second transparent resin layer (105).

An insulating layer I (touch wiring insulating layer) is provided between a plurality of first touch sensing wiring lines 1 and a plurality of second touch sensing wiring lines 2, The touch sensing wiring 2 is electrically insulated from each other by the insulating layer I.

In the structure shown in Fig. 11, the first transparent resin layer 108 and the second transparent resin layer 105 are bonded.

12 is a view showing the second touch sensing wiring 2 constituting the display device DSP3 according to the third embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by reference symbol W3 in Fig. 11 to be.

As shown in Fig. 12, the second touch sensing wiring 2 has a structure in which the second black layer 76 and the second conductive layer 75 are stacked in order in the viewing direction OB. The second black layer 76 has the same structure as the second black layer 26 of the first embodiment. The second conductive layer 75 has the same structure as the second conductive layer 25 of the first embodiment.

In the touch sensing drive, a change in the capacitance C3 at an intersection where the first touch sensing wiring 1 and the second touch sensing wiring 2 cross at right angles is detected. Each of the plurality of first touch sensing wiring 1 and the plurality of second touch sensing wiring 2 is electrically independent. The first touch sensing wiring 1 and the second touch sensing wiring 2 are orthogonal to each other in plan view. For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch driving electrode. The touch sensing controller 122 detects a change in the electrostatic capacitance C3 generated between the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal.

Also, the role of the first touch sensing wiring 1 and the role of the second touch sensing wiring 2 may be replaced. Specifically, the first touch sensing wiring 1 may be used as a touch driving electrode, and the second touch sensing wiring 2 may be used as a touch detecting electrode.

The active element 68 of the third embodiment includes a channel layer of an oxide semiconductor as in the first and second embodiments and the gate insulating layer of the active element 68 is a composite oxide containing cerium oxide Respectively.

(Fourth Embodiment)

Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings.

In the fourth embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.

Fig. 13 is a sectional view partially showing the display device DSP4 according to the fourth embodiment of the present invention.

As shown in Fig. 13, on the first surface F of the transparent substrate 40, a color filter CF is provided. The red coloring layer R, the green coloring layer G and the blue coloring layer B constituting the color filter CF are opposed to the light emitting layer 92. For this reason, each of the plurality of pixels PX is provided with a color filter. The boundary portion between the red coloring layer R and the green coloring layer G, the boundary between the green coloring layer G and the blue coloring layer B and the boundary between the blue coloring layer B and the red coloring layer R, The first touch sensing wiring 1 and the second touch sensing wiring 2 are overlapped with each other. Since the first black layer 16 and the second black layer 26 constituting the first touch sensing wiring 1 and the second touch sensing wiring 2 function as a black matrix, Overlapping. Therefore, the occurrence of color mixture of the red coloring layer (R), the green coloring layer (G) and the blue coloring layer (B) is prevented from the viewer's eyes.

The first transparent resin layer 108 is disposed so as to cover the color filter CF. The counter substrate 700 and the array substrate 200 are bonded to each other through the first transparent resin layer 108. [

According to the fourth embodiment, full color display can be realized according to the light emission of the light emitting layer 92. [

For example, the display device according to the above-described embodiments can be applied in various applications. Examples of electronic devices to which the display device according to the above-described embodiment is applicable include mobile phones, portable game devices, portable information terminals, personal computers, electronic books, video cameras, digital still cameras, head mount displays, navigation systems, A copying machine, a facsimile, a printer, a multifunctional printer, a vending machine, an ATM, a personal authentication device, and an optical communication device. The above-described embodiments can be freely combined and used.

Having described preferred embodiments of the invention and described above, it should be understood that they are illustrative of the invention and should not be construed as limiting. Additions, omissions, substitutions, and other modifications may be made without departing from the scope of the present invention. Therefore, the present invention should not be construed as being limited by the foregoing description, but is limited by the claims.

1: first touch sensing wiring
2: 2nd touch sensing wiring
2A: sense wiring (second touch sensing wiring 2)
2B: lead-out wiring (second touch sensing wiring 2)
15: first conductive layer
16: First black layer
12: second insulating layer
13: third insulating layer
14: fourth insulating layer
20: metal layer
21, 97: a first conductive metal oxide layer
22, 98: second conductive metal oxide layer
25, 75: second conductive layer
26, 76: second black layer
40: transparent substrate
42: transparent substrate
44: transparent substrate
45: substrate
54: source electrode
56: drain electrode
58: channel layer
68: active element
87: upper electrode
88: lower electrode (pixel electrode)
89: Reflective layer
91: hole injection layer
92: light emitting layer
93: Contact hole
94: Bank
95: gate electrode
96: planarization layer
100, 300, 500, 700: opposing substrate (display device substrate)
105: second transparent resin layer
108: First transparent resin layer
109: sealing layer
110:
120:
121:
122: Touch sensing control unit
123:
200, 400, 600: array substrate
F: first side
S: Second side
I: Insulating layer
P: observer
R: Red coloring layer (color filter)
G: Green colored layer (color filter)
B: blue coloring layer (color filter)
OB: Observation direction
BM: Black Matrix
PX: Pixels
TFT: Thin film transistor
TM1: First terminal
TM2: Second terminal
C1, C2, C3: Capacitance
CF: color filter
DSP1, DSP2, DSP3, DSP4: Display device

Claims (13)

Display device,
A light emitting layer which emits light at a driving voltage applied from the electrode; and a light emitting layer which is in contact with the gate insulating layer and which is made of an oxide semiconductor and which is made of an oxide semiconductor, And an active element for driving the light emitting layer,
A transparent substrate having a first surface facing the array substrate and a second surface opposite to the first surface, and a second black layer disposed between the first surface and the first black layer in the observation direction from the second surface toward the first surface, A plurality of first touch sensing lines extending in parallel to each other so as to be arranged in a first direction on the second surface and a plurality of second touch sensing lines extending in parallel in the second direction, A plurality of first touch sensing lines and a plurality of second touch sensing lines extending in parallel to each other so as to be arranged in a second direction orthogonal to the first direction as viewed in a plan view A plurality of pixels divided by the plurality of first touch sensing wirings and the plurality of second touch sensing wirings in plan view;
And a control unit for detecting a change in capacitance between the first touch sensing wiring and the second touch sensing wiring to perform touch sensing. The method according to claim 1,
The first touch sensing wiring and the second touch sensing wiring are formed on the second surface,
An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring,
Wherein the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other. The method according to claim 1,
The first touch sensing wiring is formed on the second surface,
And the second touch sensing wiring is formed on the first surface. The method according to claim 1,
The first touch sensing wiring and the second touch sensing wiring are formed in order on the first surface in the observation direction,
An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring,
Wherein the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other. The method according to claim 1,
The oxide semiconductor may be formed,
A metal oxide containing at least one element selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium and cerium,
And a metal oxide containing at least either antimony or bismuth. The method according to claim 1,
Wherein the gate insulating layer is formed of a composite oxide containing cerium oxide. The method according to claim 1,
Wherein at least a gate wiring out of a plurality of wirings electrically connected to the active element is a three-layered structure in which a layer selected from the group consisting of a silver layer, a silver alloy layer, a copper layer and a copper alloy layer is sandwiched by a conductive metal oxide layer Structure. The method according to claim 1,
Wherein the light emitting layer comprises a light emitting diode layer. The method according to claim 1,
Wherein the light emitting layer comprises an organic electroluminescence layer. A display device substrate for use in the display device according to claim 1,
Wherein the first conductive layer and the second conductive layer have a three-layer structure in which a layer selected from the group consisting of a silver layer, a silver alloy layer, a copper layer and a copper alloy layer is sandwiched by a conductive metal oxide layer, Device substrate. 11. The method of claim 10,
The conductive metal oxide layer may be formed,
And a composite oxide comprising at least two metal oxides selected from the group consisting of indium oxide, zinc oxide, antimony oxide, tin oxide, gallium oxide and bismuth oxide. 11. The method of claim 10,
Wherein the conductive metal oxide layer is formed of a composite oxide containing indium oxide, zinc oxide and tin oxide,
The atom ratio of In / (In + Zn + Sn) of indium (In), zinc (Zn) and tin (Sn) contained in the composite oxide is greater than 0.8 and the atomic ratio of Zn / Sn is greater than 1 , A display device substrate. 11. The method of claim 10,
Wherein the plurality of pixels comprise color filters.

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