KR20190012030A - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device and, specifically, to a display device using a semiconductor light emitting element and a method of manufacturing thereof. According to the present invention, a display device has at least one semiconductor light emitting element coupled to a substrate, and the substrate comprising: a base body having a through-hole and formed of an insulation material; a solder formed in an annular shape, coupled to the semiconductor light emitting element, and disposed on one surface of the base body such that a hollow part of the annular shape overlaps the through-hole; and a metal part filling the through-hole.

Description

TECHNICAL FIELD [0001] The present invention relates to a display device using a semiconductor light emitting device,

The present invention relates to a display device and a method of manufacturing the same, and more particularly to a display device using a semiconductor light emitting device.

 In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of an LCD, there is a problem that the reaction time is not fast and the implementation of the flexible is difficult. In the case of the AMOLED, there is a weak point that the life span is short and the mass production yield is not good.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a display using the semiconductor light emitting device can be presented.

As described above, in the case of a display using a semiconductor light emitting device, it is difficult to realize a large-sized display device. Therefore, recently, a manufacturing method in which a semiconductor light emitting device is bonded to a substrate by a self-assembly method has been developed.

However, since the self-assembly method depends on the surface tension of the conductive electrode and the solder of the semiconductor light emitting device, the assembly efficiency is low. Further, due to the structure in which heat is concentrated, a weak disadvantage may occur in terms of reliability. Thus, mechanisms for mitigating these disadvantages in a self-assembly manner can be considered.

It is an object of the present invention to provide a structure capable of improving the assembling efficiency at the time of self-assembly of a semiconductor light emitting device in a display device.

It is another object of the present invention to provide a display device using a semiconductor light emitting device having a heat dissipating structure and a method of manufacturing the same.

The present invention provides a structure in which flow is induced through a hole, and semiconductor light emitting devices are moved to an assembly region, thereby improving the erase ratio. Further, after the semiconductor light emitting device is bonded to the substrate with the solder, additional bonding is implemented by electroplating to realize a heat dissipation structure.

Specifically, a display device according to the present invention includes at least one semiconductor light emitting device coupled to a substrate, the substrate including a base body formed of an insulating material and having a through hole, A solder coupled to the light emitting device and disposed on one surface of the base body such that the annular hollow portion overlaps the through hole, and a metal portion configured to fill the through hole.

In an embodiment, the metal portion protrudes from the entrance of the through hole toward the semiconductor light emitting element. The metal portion may pass through the hollow portion through the protrusion to lead to the conductive electrode of the semiconductor light emitting device.

In an embodiment, the metal part is made of a platable metal material. The metal part may include a first metal material applied to the inner wall of the through hole and a second metal material plated on the first metal material to fill the through hole. The first metal material may include a first portion covering the conductive electrode of the semiconductor light emitting device and a second portion formed in a direction perpendicular to the first portion and formed on an inner wall of the through hole.

In one embodiment, an oxidation barrier layer is formed on the other surface of the base body to cover the metal part.

In an embodiment, a reflective layer is formed on one surface of the base body. The reflection layer may have a reflection through hole corresponding to the through hole, and the metal part may fill the reflection through hole. The reflective layer may have a metal layer formed along an outer periphery of the through hole, and the solder may be laminated on the metal layer.

In one embodiment of the present invention, the semiconductor light emitting device includes a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer surrounding at least a part of the semiconductor light emitting device, The holes are smaller in size than the conductive electrodes. The conductive electrode may have an annular first region contacting the solder and a second region contacting the metal portion and formed inside the first region.

The method includes the steps of growing a semiconductor light emitting device on a growth substrate, separating the semiconductor light emitting device from the growth substrate, self-assembling the substrate in a fluid-filled chamber sequentially, And a solder for coupling with the semiconductor light emitting device is disposed on one surface of the substrate. The method of manufacturing a display device according to the present invention includes the steps of:

In an embodiment, the fluid in the chamber flows through the through hole to lead the semiconductor light emitting element to the solder.

The filling of the metal part may include sputtering a first metal material on the inner wall of the through hole, and filling the through hole with a second metal material by plating the first metal material do.

The conventional self-assembly method is implemented by probability depending on the surface tension between the bonding metal and the conductive electrode, but in the present invention, the flow is induced through the through hole of the annular solder and the substrate, The light emitting element can be moved toward the solder. Accordingly, in the present invention, the assembly efficiency of the semiconductor light emitting device in self-assembly can be improved.

In addition, in the present invention, after the semiconductor light emitting device is bonded to the substrate with the solder, the additional bonding is realized by the electroplating method, so that the bonding reliability can be further improved. According to this structure, since the through holes are filled with the metal, heat dissipation can be facilitated.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
Fig. 10 is an enlarged view of a portion A in Fig. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting element and a wiring board of a new structure are applied.
11 is a cross-sectional view taken along line EE of Fig. 10; Fig.
Fig. 12A is an enlarged view of a portion B in Fig. 11, and Fig. 12B is an exploded enlarged view of a semiconductor light emitting element in a wiring substrate.
13 is an enlarged view of a portion B in Fig. 11 showing another embodiment of the present invention.
14, 15, and 16 are conceptual diagrams illustrating a method of manufacturing a display device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix " module " and " part " for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device formed on the wafer and formed through mesa and isolation is used as an individual pixel. Since the semiconductor light emitting device grown on the wafer is transferred to the wiring substrate, there is a problem that it is difficult to realize a large screen display due to the size limitation of the wafer. In order to solve such a problem, a method of assembling a semiconductor light emitting device into a wiring board by a self-assembly method can be applied.

The self-assembly method is a method in which semiconductor light emitting devices are placed on a wiring board or an assembly substrate in a fluid-filled chamber. For example, the semiconductor light emitting devices and the substrate are placed in a chamber filled with a fluid, and the fluid is heated so that the semiconductor light emitting devices are assembled to the substrate by themselves. For this, the substrate may be provided with grooves through which the semiconductor light emitting devices are inserted. Specifically, the substrate is provided with grooves on which the semiconductor light emitting devices are mounted at positions where the semiconductor light emitting devices are aligned with the wiring electrodes. The grooves are formed in a shape corresponding to the shape of the semiconductor light emitting devices, and the semiconductor light emitting devices are randomly moved in the fluid and assembled into the grooves.

Further, when the large-sized surface is implemented by the self-assembly method, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device can be self-assembled without using a phosphor or a color filter, .

In the present invention, a structure for improving the assembly efficiency of the semiconductor light emitting elements and a novel heat dissipation structure are proposed. However, in the display device described below, the structure for improving the assembly efficiency and the new heat dissipation structure can be implemented independently of each other.

Fig. 10 is an enlarged view of a portion A in Fig. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting device and a wiring board of a new structure are applied, Fig. 11 is a cross- 12A is an enlarged view of a portion B in Fig. 11, and Fig. 12B is an exploded enlarged view of a semiconductor light emitting element in a wiring substrate.

10, 11, 12A and 12B, a display device 1000 using a passive matrix (PM) type vertical semiconductor light emitting device is used as a display device 1000 using a semiconductor light emitting device. For example. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010, a first electrode 1020, an insulating layer 1060, a plurality of semiconductor light emitting devices 1050, and a second electrode 1040. Here, the first electrode 1020 and the second electrode 1040 may each include a plurality of electrode lines.

The substrate 1010 is a wiring substrate on which the first electrode 1020 is disposed and the first electrode 1020 is disposed on the substrate 1010 and may be formed as a long bar- have. The first electrode 1020 may serve as a data electrode.

The first electrode 1020 is connected to the p-type electrode of the semiconductor light emitting element via an electric wiring as a lower wiring electrode. The main element at the top of the electrode is a single component of Au, Cu, In, Sn, Mixed components of four elements are possible. In this case, the electrode may have a thickness of 50 nanometers or more to lower the resistance.

A plurality of second electrodes (not shown) electrically connected to the semiconductor light emitting device 1050 may be disposed between the semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 1020, 1040).

According to the illustration, the second electrode 1040 may be positioned on the insulating layer 1060. More specifically, insulating material is filled between the semiconductor light emitting devices to form an insulating layer 1060, and a second electrode 1040, which is an upper wiring, is disposed on one surface of the insulating layer 1060.

The insulating layer 1060 is an insulating material such as polyimide (PI), PET, PEN, PDMS, PMPS or the like and is formed of a flexible material so as to be integrated with the substrate 1010, have.

As a more specific example, the insulating layer 1060 may be a PDMS & PMPS mixture (0? PDMS? 100) containing a transparent resin or a white material. By the insulating layer, the chip is protected in the external environment, and the light extraction efficiency can be further improved.

In this case, the second electrode 1040 may be electrically connected to the second conductive type electrode 1152 of the semiconductor light emitting device 1050 by contact.

The plurality of semiconductor light emitting devices 1050 are coupled to the wiring substrate 1010 and are electrically connected to the first electrode 1020 and the second electrode 1040.

As shown in the figure, the plurality of semiconductor light emitting devices 1050 can form a plurality of rows in a direction parallel to a plurality of electrode lines provided in the first electrode 1020. However, the present invention is not limited thereto. For example, the plurality of semiconductor light emitting devices 1050 may form a plurality of rows along the second electrode 1040.

The semiconductor light emitting device 1050 includes a red semiconductor light emitting device 1051, a green semiconductor light emitting device 1052, and a blue semiconductor light emitting device 1053.

However, the present invention is not necessarily limited to the above structure. For example, the red semiconductor light emitting device 1051 may be replaced with a green semiconductor light emitting device 1052 or a blue semiconductor light emitting device 1053. For example, in a semiconductor light emitting device, two blue semiconductor light emitting devices 1053 and one green semiconductor light emitting device 1052 may form one pixel. In this case, one of the blue semiconductor light emitting devices 1053 Blue sub-pixel, and the other may form a red sub-pixel.

For example, a phosphor layer (not shown) may overlap the upper surface of the blue semiconductor light emitting element 1053. The phosphor layer converts the blue light into a color of a unit pixel. The phosphor layer includes a red phosphor and converts blue light of the blue semiconductor light emitting element into red light in a red sub-pixel. Further, a red color filter (not shown) for filtering a wavelength range other than the red light is overlapped on the upper surface of the phosphor layer to improve color purity.

As another example, it is also possible to construct a display device using only a blue semiconductor light emitting element. In this case, the semiconductor light emitting device 1050 includes only a blue semiconductor light emitting device, and red and green phosphor layers (not shown) may overlap the upper surface of the blue semiconductor light emitting device 1053.

The structures of the red semiconductor light emitting device 1051, the green semiconductor light emitting device 1052, and the blue semiconductor light emitting device 1053 described below are the same and will be described with reference to FIG. 12A. In addition, the structure of the semiconductor light emitting device described below can be applied to, for example, a case where only a blue semiconductor light emitting device is used or a display device is configured using only blue and green semiconductor light emitting devices.

The semiconductor light emitting device may be referred to as a micro-LED, has an area of 25 to 250000 micrometers squared, and the thickness of the chip may be about 2 to 10 micrometers.

12A, for example, the semiconductor light emitting device 1050 includes a first conductive type electrode 1156, a first conductive type semiconductor layer 1155 on which a first conductive type electrode 1156 is formed, A second conductive semiconductor layer 1153 formed on the active layer 1154 and a second conductive semiconductor layer 1153 formed on the second conductive semiconductor layer 1153. The active layer 1154 is formed on the first conductive semiconductor layer 1155, And includes a conductive electrode 1152.

The first conductivity type semiconductor layer 1155 and the second conductivity type semiconductor layer 1153 overlap each other and the second conductivity type semiconductor layer 1153 is disposed on the upper surface thereof with the second conductivity type electrode 1152, A first conductive type electrode 1156 is disposed on the lower surface of the first conductive type semiconductor layer 1155. In this case, the upper surface of the second conductivity type semiconductor layer 1153 is one surface of the second conductivity type semiconductor layer 1153 farthest from the first conductivity type semiconductor layer 1155, 1155 may be one surface of the first conductivity type semiconductor layer 1155 farthest from the second conductivity type semiconductor layer 1153. [ The first conductive type electrode 1156 and the second conductive type electrode 1152 are formed on the upper and lower sides of the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153 .

Referring to FIG. 12 together with FIGS. 10 and 11, the lower surface of the first conductive type semiconductor layer 1155 may be a surface closest to the wiring substrate, and the upper surface of the second conductive type semiconductor layer 1153 May be the farthest surface to the wiring board.

More specifically, the first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductive type electrode 1152 and the second The conductivity type semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

The p-type semiconductor layer may be P-type GaAs, and the n-type semiconductor layer may be N-type GaAs. However, in the case of the green semiconductor light emitting device and the blue semiconductor light emitting device, the p-type semiconductor layer may be P-type GaN and the n-type semiconductor layer may be N-type GaN. In this example, the p-type semiconductor layer may be a p-type GaN doped with Mg and the n-type semiconductor layer may be a N-type GaN doped with Si. In this case, the above-described semiconductor light emitting elements can be semiconductor light emitting elements without an active layer. In addition, in the embodiments described below, the semiconductor light emitting devices include the active layer. However, the p-type semiconductor layer is a P-type GaN doped with Mg and the n-type semiconductor layer is made of Si A structure without an active layer which becomes doped N-type GaN can be applied.

In this case, the conductive semiconductor layer has a square area of 25 to 250000 micrometers square, a thickness of about 2 to 10 micrometers, a circular shape, and a pentagon shape or more if necessary.

In this case, the p-type electrode located at the bottom may be electrically connected to the first electrode 1020 by a solder or a metal part, and the n-type electrode located at the top may be electrically connected to the second electrode 1040. At this time, the p-type electrode may include a plurality of metal layers made of different metals. For example, a plurality of metal layers made of Ti, Pt, Au, Ti, Cr or the like may be laminated to form the p-type electrode.

More specifically, the p-type electrode is bonded on the Mg-doped GaN, and may be made of Au, Cu, or a mixture thereof. The area is 30 to 75% of the area of the GaN epitaxial, and the position of the electrode can be arranged in the center of the GaN epi. The shape of the electrode is preferably circular, but a polygon having a square or more is also possible if necessary. Here, the area and shape of the p-type electrode refers only to the portion of the open p-type electrode not covered by the passivation layer. In this case, the pure area of the p-type electrode is between the total area of the GaN epi in the area of the portion of the p-type electrode that is turned off. Further, in order to improve the bonding strength between GaN and Au or Cu, a Ti, Cr, or Pt layer may be added to the interface. The total thickness of the p-type electrode may be between 100 nanometers and 5 micrometers.

At this time, the semiconductor light emitting device includes a passivation layer 1160 formed to surround the sides of the first conductivity type semiconductor layer 1155 and the second conductivity type semiconductor layer 1153.

The passivation layer 1160 covers the side surface of the semiconductor light emitting device to stabilize the characteristics of the semiconductor light emitting device and is formed of an insulating material. Since the gap between the first conductivity type semiconductor layer 1155 and the second conductivity type semiconductor layer 1153 is electrically disconnected by the passivation layer 1160, the P-type GaN and N -type GaN can be insulated from each other.

In this case, the passivation layer 1160 includes an exposure hole 1161 to expose the first conductive type electrode 1156. At least a part of a solder 1071 and a metal part 1080 which will be described later are inserted into the exposure hole 1161 so that the semiconductor light emitting device can be coupled to the wiring board. At this time, when the semiconductor light emitting device is self-assembled, the wiring board is immersed in the fluid in a state where the solder 1071 is melted. The solder 1071 and the conductive electrode are bonded to each other while the solder 1071 is solidified, and then the metal part 1080 is plated to couple the metal part and the conductive electrode to each other.

The lower surface of the passivation layer 1160 may protrude from the lower surface of the conductive type electrode so as to restrict the conductive type electrode of any one of the plurality of semiconductor light emitting devices from contacting the other conductive type electrode during self- have. The passivation layer 1160 covers the lower surface of the first conductive electrode 1156 (the farthest surface from the conductive semiconductor layer), and the first conductive electrode 1156 covers the exposed hole 1161, It can be a structure that does not penetrate through. According to this structure, the first conductive type electrode 1156 is obscured by the passivation layer 1160 in the form of a negative angle, and the solder 1071 penetrates through the exposure 1161, The electrode 1156 is connected.

The material of the passivation layer 1160 may be SiO2 or SiNx, covering all of the sides of the GaN epilayer and exposing the central portion of the conductive electrode. The lower surface is formed so as to cover all portions of the p-type electrode or the GaN epitaxial layer except for the portion of the p-type electrode which is exposed to the outside. The thickness of the passivation layer is 50 nm to 5 micrometers, and the thickness of the bottom surface and the thickness of the side surface may be different from each other.

The red semiconductor light emitting device 1051, the green semiconductor light emitting device 1052 and the blue semiconductor light emitting device 1053 are electrically connected to the solder 1071 and the metal portion 1080 through self-assembly .

10 to 12B, the substrate 1010 includes a base body 1011 formed of an insulating material. The base body 1011 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

In this case, the base body 1011 may have a plurality of through holes 1012 corresponding to each of the plurality of semiconductor light emitting devices. The through hole 1012 may be a hole extending from one surface of the base body 1011 to the other surface, which serves as a passage through which the fluid can flow during self-assembly of the semiconductor light emitting device.

 The solder 1071 may be disposed on the base body 1011. The solder 1071 may be disposed on one side of the base body 1011 such that the solder 1071 is formed in an annular shape and coupled with the semiconductor light emitting device and the annular hollow portion overlaps the through hole 1012. Through this, the solder 1071 realizes a passage through which the fluid can flow together with the through-hole 1012. In this case, the first electrode 1020 is disposed on the other surface of the base body 1011 to form a lower wiring of the semiconductor light emitting device. In this case, the through hole 1012 may be smaller than the first conductive electrode 1156 of the semiconductor light emitting device.

The solder 1071 is an auxiliary electrode electrically connecting the first electrode 1020 and the semiconductor light emitting device 1050 and is disposed corresponding to the position of the through hole 1012. For example, the solder 1071 has a donut shape and may be electrically connected to the first electrode 1020 by the metal part 1080 filled in the through hole 1012.

For example, the solder 1071 may be formed of a material having a low melting point and may be applied to the substrate in the form of a dot. More specifically, the semiconductor light emitting device 1050 is electrically and physically connected to the substrate through soldering using the solder 1071. Soldering refers to bonding metals together using solder, flux, and heat. The solder material may be at least one of Sn, Ag, Cu, Pb, Al, Bi, Cd, Fe, In, Ni, Sb, Zn, Co and Au.

Meanwhile, a reflective layer 1013 may be formed on one side of the base body 1011 according to an embodiment of the present invention. The reflective layer 1013 may be formed by depositing high reflective materials on one side of the base body 1011 so as to serve as a reflector.

In this case, the reflection layer 1013 is provided with a reflection through hole 1014 corresponding to the through hole 1012 to form a passage through which the fluid can flow. A metal layer 1072 may be formed on the reflective layer 1013 along the outer periphery of the through hole 1012 and the solder 1071 may be stacked on the metal layer 1072.

The metal layer 1072 is an UBM (Under Bump Metallurgy) layer having a size equal to or smaller than that of the first conductive electrode 1156 of the semiconductor light emitting device, and is formed in an annular shape. The UBM layer serves as a buffer for external force when the semiconductor light emitting device is assembled and driven. Thus, the durability and reliability of the display device can be improved.

The hollow portion of the solder 1071, the hollow portion of the metal layer 1072, the reflection through hole 1014, and the through hole 1012 are in turn overlapped with each other, .

Meanwhile, the metal part 1080 is configured to fill the through hole 1012. The metal part 1080 protrudes from the entrance of the through hole 1012 toward the semiconductor light emitting device and charges the reflection through hole 1014 through the protrusion and contacts the hollow part of the metal layer 1072 And passes through the hollow portion of the solder 1071 to reach the conductive electrode of the semiconductor light emitting device.

The first conductive electrode 1156 of the semiconductor light emitting device contacts the solder 1071 and the metal portion 1080 and can be partitioned into the first region 1156a and the second region 1156b. The first region 1156a is an annular region in contact with the solder 1071 and the second region 1156b is in contact with the metal portion 1080 and is in contact with the first region 1156a, As shown in FIG.

More specifically, the metal part 1080 is made of at least a part of a plated metal, and the through hole 1012 and the reflection through hole 1014 are filled through plating. For example, the metal portion 1080 may include a first metal material 1081 applied to the inner wall of the through hole 1012, and a second metal material 1082 applied to the first metal material 1081 to fill the through hole 1012. [ And a second metal material 1082 to be plated.

The first metal material 1081 may be a seed layer for the electroplating process. For example, copper may be formed on the through hole 1012 and a part of the semiconductor light emitting device by a sputtering method . For example, the first metal material 1081 may include a first portion 1081a covering the conductive electrode of the semiconductor light emitting device, and a through hole 1012a formed in a direction perpendicular to the first portion 1081a, And a second portion 1081b formed on the inner wall of the first portion 1081b. More specifically, the first portion 1081a covers the portion surrounded by the solder at the first conductive electrode of the semiconductor light emitting device. The second portion 1081b extends from the edge of the first portion 1081a toward the substrate to cover the hollow portion of the solder, the hollow portion of the metal layer, the reflection through hole, and the inner wall of the through hole.

The second metal material 1082 is formed of a platable material, and the electroconductive electrode region of the semiconductor light emitting device is covered with a material having high thermal and electrical conductivity such as copper. In this case, when the first metal material 1081 and the second metal material 1082 are made of the same material, the first metal material 1081 and the second metal material 1082 are integrated with each other, The first portion 1081a and the second portion 1081b can be distinguished from each other.

As described above, the passages of the fluid are formed by using the annular solder and the through holes, the self-assembly process is performed through the passages, and then the second metal bonding is performed through the electroplating method. .

Meanwhile, the solder and the metal part described above can be modified into various forms. Hereinafter, an example of this modification will be described.

13 is an enlarged view of a portion B in Fig. 11 showing another embodiment of the present invention.

In the example of Fig. 13, the same reference numerals are given to the same components as those of the example described above with reference to Figs. 10 to 12, and the description thereof is replaced with the first explanation. Specifically, the remaining configuration except for the solder and the metal part is the same as the configuration of the example described in Figs. 10 to 12. Fig.

Referring to the drawing, the upper surface of the solder 2071 may be a closed surface without a hollow portion. That is, the solder 2071 includes a base portion 2071a covering the conductive electrode 2156 of the semiconductor light emitting device, and an annular protrusion 2071b projecting from the base portion 2071a.

There is no opening in the base portion 2071a, so that the solder 2071 completely covers the conductive electrode 2156. At this time, the upper side of the solder 2071 with the base portion 2071a is inserted into the exposure hole 2161 of the passivation layer 2160 of the semiconductor light emitting device.

According to this structure, the metal part 2080 fills the inside of the annular protrusion 2071b to cover the lower surface of the base part 2071a. Accordingly, a structure in which the primary bonding metal is bonded to the entire conductive electrode and the secondary bonding metal is combined with the primary bonding metal may be formed.

The solder 2071 is applied in an annular shape during self-assembly of the semiconductor light emitting device. When the conductive electrode of the semiconductor light emitting device is seated, the solder 2071 is pressed by the conductive electrode, The base member 2071 may have a base portion.

An antioxidant layer 2090 covering the metal part 2080 may be formed on the other surface of the base body 2011 of the substrate 2010. The antioxidant layer 2090 may be deposited on the base body 2011 in various ways. In this case, the above-mentioned first electrode is not formed on the substrate, and the lower wiring can be realized in other ways.

According to the above-described structure, after the semiconductor light emitting device is bonded to the substrate with the solder, the additional bonding is realized by the electroplating method, so that the bonding reliability can be further improved. According to this structure, since the through holes are filled with the metal, heat dissipation can be facilitated.

Hereinafter, a method of manufacturing a display device using the semiconductor light emitting device having the structure described above will be described in detail with reference to the accompanying drawings. 14, 15, and 16 are conceptual diagrams illustrating a method of manufacturing a display device according to the present invention.

First, according to the manufacturing method, a second conductivity type semiconductor layer 1153, an active layer 1154, and a first conductivity type semiconductor layer 1155 are grown on a growth substrate 1200 (wafer) (FIG. 14A) ).

When the second conductive type semiconductor layer 1153 is grown, an active layer 1154 is grown on the second conductive type semiconductor layer 1153 and then the first conductive type semiconductor layer 1153 is grown on the active layer 1154. Next, Layer 1155 is grown.

When the second conductivity type semiconductor layer 1153, the active layer 1154 and the first conductivity type semiconductor layer 1155 are sequentially grown in this way, as shown in FIG. 14A, A laminated structure is formed. In this case, an undoped semiconductor layer 1153a may be formed between the second conductive type semiconductor layer 1153 and the growth substrate.

The growth substrate 1200 may be formed of any material having optical transparency, for example, sapphire (Al 2 O 3), GaN, ZnO, or AlO, but is not limited thereto. Further, the growth substrate 1200 may be formed of a carrier wafer, which is a material suitable for semiconductor material growth. And may include a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate, or at least one of Si, GaAs, GaP, InP and Ga2O3 Can be used.

Next, isolation is performed so that a plurality of light emitting devices form a light emitting device array on the growth substrate 1200. That is, the first conductivity type semiconductor layer 1155, the active layer 1154, and the second conductivity type semiconductor layer 1153 are etched to form a plurality of semiconductor light emitting devices (FIG. 14B).

Next, as shown in FIG. 14C, a first conductive type electrode 1156 is formed on the first conductive type semiconductor layer 1155 exposed to the outside, The passivation layer 1160 is formed to surround the semiconductor light emitting device.

In this case, the green semiconductor light emitting device and the blue semiconductor light emitting device may be separately grown on the growth substrate so that the light emitting structure of the green semiconductor light emitting device and the blue semiconductor light emitting device is grown. Also, the red semiconductor light emitting device may be grown on a separate growth substrate so that the light emitting structure of the red semiconductor light emitting device is grown.

Next, as shown in FIG. 15, the semiconductor light emitting device 1050 is separated from the growth substrate, and is sequentially bonded to the substrate 1010 through a self-assembly process in a fluid-filled chamber.

15A, semiconductor light emitting devices 1050 and a substrate 1010 are first placed in a chamber filled with a fluid, and the fluid is heated so that the semiconductor light emitting devices 1050 are connected to the substrate 1010 Let them assemble themselves.

In this case, as described above, the substrate 1010 includes a base body 1011 formed of an insulating material, and a reflective layer 1013 may be formed on a surface of the base body. A through hole 1012 is formed in the base body 1011 and a reflection through hole 1014 is formed in the reflection layer 1013. A metal layer 1072 is formed on the reflective layer 1013 along the outer periphery of the through hole 1012 and the solder 1071 is stacked on the metal layer 1072 (see FIG. 15B) . The metal layer and the solder may be formed in an annular shape.

In this case, the hollow portion of the solder 1071, the hollow portion of the metal layer 1072, the reflective through-hole 1014, and the through-hole 1012 are in turn overlapped with each other, A passage may be formed. Further, a drainage device is provided so that a uniform flow can be formed in the lower part of the container in which the chip is dispersed, and the substrate is moved in the opposite direction to and from the opposite direction. Further, an external motion such as sonication may be applied to move the chip in the fluid. However, in addition to the method of dispersing chips in a fluid, this method can be implemented even if a chip is previously dispersed in a substrate.

When the substrate having the via hole and the primary bonding metal formed therein flows into the fluid in which the semiconductor light emitting device is dispersed, the movement of the semiconductor light emitting device is induced and self-assembly is performed. The fluid in the chamber flows through the through-hole 1012 to guide the semiconductor light emitting device to the solder 1071. Hereinafter, it is referred to as a liquid flow inducing method. At this time, the fluid may be subjected to acid and heat to break the oxide film of the solder 1071 and to hold the liquid.

Referring to FIG. 15B, the semiconductor light emitting device is primarily assembled to the solder 1071, which is a primary bonding metal, through a flow induction method. In this case, the solder 1071 may be bonded to the chip over part or the entire surface of the conductive electrode of the semiconductor light emitting device.

Referring to FIG. 15 (c), a PDMS & PMPS mixture (0? PDMS? 100) containing a transparent resin or a white material may be coated on a substrate on which a semiconductor light emitting device is assembled through a flow induction method. This is aimed not only to protect the chip in the plating process of the secondary bonding metal and the external environment but also to improve the light extraction efficiency. The insulating layer 1060 described above may be formed by the coated PDMS & PMPS mixture.

Next, a heat dissipating and lower wiring process can be performed. 16A and 16B, the step of filling the metal part 1080 includes the steps of sputtering a first metal material 1081 on the inner wall of the through hole 1012, And filling the through hole 1012 with a second metal material 1082 by plating the first metal material 1081.

First, a seed layer for electroplating is formed as shown in FIG. 16A. The seed layer is formed by laminating a first metal material 1081 such as copper to the hollow portion of the solder 1071, the hollow portion of the metal layer 1072, A reflection through hole 1013, an inner wall of the through hole 1012, and a part of the semiconductor light emitting device.

Next, the electrode area of the semiconductor light emitting device is filled with a second metal material 1082, for example, a material having high heat conductivity and high electrical conductivity, such as copper (see FIG. 16B) through electroplating. Through the plating, the above-described metal portion 1080 can be realized.

If the second metal material 1082 is made of the same material as the first metal material 1081, the metal part 1080 may be formed of a single metal material 1081 having no boundary of the second metal material 1082 Metal addition.

Thereafter, the first electrode 1020 is formed on the lower surface of the base body to be connected to the metal portion 1080 (see FIG. 16 (c)). Through this, lower wiring is realized.

Finally, as shown in FIG. 16D, the undoped semiconductor layer 1153a is removed to expose the second conductivity type semiconductor layer to the outside in order to form the upper wiring, and then the second conductivity type An electrode 1152 is formed, and a second electrode 1040, which is an upper wiring, is deposited.

The second electrode 1040 may be formed of ITO, Ag nanowire, or a conductive polymer. The second electrode 1040 may have a low light absorbance and a high transmittance. Encapsulation resin such as silicon may be applied to improve the light extraction efficiency and protect the semiconductor light emitting device.

According to the manufacturing method described above, the bonding reliability can be further improved and a structure in which heat dissipation is easier can be applied to a display device using a semiconductor light emitting device.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (15)

A display device comprising at least one semiconductor light emitting element coupled to a substrate,
Wherein:
A base body having a through hole and formed of an insulating material;
A solder that is formed in an annular shape and is coupled to the semiconductor light emitting device and disposed on one surface of the base body such that the annular hollow portion overlaps the through hole; And
And a metal portion configured to fill the through hole. The method according to claim 1,
Wherein the metal part protrudes from the entrance of the through hole toward the semiconductor light emitting element. 3. The method of claim 2,
Wherein the metal portion passes through the hollow portion through the protrusion and leads to the conductive electrode of the semiconductor light emitting device. The method according to claim 1,
Wherein the metal portion is made of a platable metal material. 5. The method of claim 4,
Wherein the metal portion comprises a first metal material applied to an inner wall of the through hole and a second metal material plated on the first metal material to fill the through hole. 6. The method of claim 5,
Wherein the first metal material includes a first portion covering the conductive electrode of the semiconductor light emitting device and a second portion formed in a direction perpendicular to the first portion and formed on an inner wall of the through hole, Display device. The method according to claim 1,
And an anti-oxidation layer covering the metal part is formed on the other surface of the base body. The method according to claim 1,
And a reflective layer is formed on one surface of the base body. 9. The method of claim 8,
Wherein the reflection layer is provided with a reflection through hole corresponding to the through hole, and the metal part is configured to fill the reflection through hole. 9. The method of claim 8,
Wherein a metal layer is formed on the reflective layer along an outer periphery of the through hole, and the solder is stacked on the metal layer. The method according to claim 1,
The semiconductor light-
A conductive semiconductor layer;
A conductive electrode formed on one surface of the conductive semiconductor layer; And
And a passivation layer surrounding at least a part of the semiconductor light emitting device,
Wherein the through hole is smaller in size than the conductive electrode. 12. The method of claim 11,
Wherein the conductive electrode has an annular first region in contact with the solder and a second region in contact with the metal portion and formed inside the first region. Growing a semiconductor light emitting device on a growth substrate;
Separating the semiconductor light emitting device from the growth substrate and sequentially bonding the substrate to the substrate through self-assembly in a fluid-filled chamber; And
And filling a through hole provided in the substrate with a metal portion,
Wherein a solder is formed on one surface of the substrate so as to be annularly formed and coupled with the semiconductor light emitting device. 14. The method of claim 13,
Wherein the fluid in the chamber flows through the through hole to guide the semiconductor light emitting device to the solder. 14. The method of claim 13,
The step of filling the metal part comprises:
A step of sputtering a first metal material on an inner wall of the through hole, and a step of plating a second metal material on the first metal material to fill the through hole.

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