KR20190011613A - Improved Substrate Support Device for Heat Treatment, and Heat Treatment Chamber and Apparatus Having the Same - Google Patents

Abstract

According to the present invention, disclosed is an improved substrate support apparatus for a heat treatment and a substrate heat treatment chamber and an apparatus having the same. According to the present invention, the substrate support apparatus for a heat treatment includes: a substrate support member having an inner supply pipe or a cavity supplying a heat transfer fluid in a circulation manner; a heater member connected to the inner supply pipe or the cavity through an outer supply pipe; and a pump provided on the outer supply pipe and supplying the heat transfer fluid to the inner supply pipe or the cavity in the circulation manner.

Description

TECHNICAL FIELD [0001] The present invention relates to a substrate supporting apparatus for an improved heat treatment, and a substrate heating apparatus including the same,

The present invention relates to an improved substrate support apparatus for substrate heat treatment, and a substrate heat treatment chamber and apparatus having the same.

More specifically, the present invention relates to a substrate support member provided with a supply pipe or cavity for circulating a heat transfer fluid therein instead of a boat for supporting a substrate provided in a heat treatment chamber used in the prior art, It is possible to perform heat treatment of the substrate by heat conduction by the heat transfer fluid and additionally by the heat radiation method by the movable lamp or the main lamp unit to heat the substrate The heat transfer efficiency and the temperature uniformity of the substrate are remarkably improved and the occurrence of heat loss at both side and corner portions of the substrate is substantially prevented and the substrate temperature uniformity is further greatly improved, A substrate supporting apparatus for heat treatment, and a substrate provided with the same It relates to a process chamber, and devices.

An annealing apparatus used for manufacturing semiconductors, flat panel displays and solar cells can be applied to a predetermined film (organic material and / or organic material) deposited on a flexible substrate (hereinafter collectively referred to as "substrate") such as a silicon wafer, Inorganic substance), which is necessary for a process such as crystallization and phase change.

A typical annealing apparatus is a silicon crystallization apparatus for crystallizing amorphous silicon deposited on a glass substrate into polysilicon when a liquid crystal display or a thin film crystalline silicon solar cell is manufactured.

In order to perform such a crystallization process (heat treatment process), a heat treatment apparatus capable of heating a substrate on which a predetermined thin film (hereinafter referred to as "film") is formed must be provided. For example, for crystallization of amorphous silicon, a temperature of at least 550 to 600 DEG C is required.

Generally, a heat treatment apparatus includes a single-wafer type in which heat treatment can be performed on one substrate, and a batch type in which heat treatment can be performed on a plurality of substrates. There is a merit of simple configuration of the apparatus, but there is a disadvantage that the productivity is low, and the batch formula is getting popular for the mass production in recent years.

FIG. 1 is a perspective view showing a configuration of a batch type heat treatment apparatus according to the prior art, FIG. 2 (a) is a perspective view showing a configuration of a chamber of a batch type heat treatment apparatus according to the prior art shown in FIG. 1, Fig. 5 is a perspective view showing the arrangement of the substrate, the main heater unit, and the auxiliary heater unit of the batch type heat treatment apparatus according to the first embodiment. Such a batch heat treatment apparatus according to the prior art is filed in Korean Patent Application No. 10-2008-0069329, entitled " Batch Heat Treatment Apparatus ", filed July 16, 2008 by Huh, Are described in detail in Korean Patent No. 10-1016048, filed on February 11,

1 and 2B, the batch type thermal processing apparatus 1 according to the related art includes a chamber 100 having a rectangular parallelepiped shape for providing a heat treatment space and a frame 110 for supporting the chamber 100 .

A door 140 is installed at one side of the chamber 100 to open and close the substrate 10 in a vertical direction to load the substrate 10 into the chamber 100. After the heat treatment is completed, the boat 120 may be transferred to the outside of the chamber 100 through the door 140, and then the substrate 10 may be unloaded on the boat 420.

A cover 160 is provided on the upper side of the chamber 100 for repairing and replacing a boat 120, a gas supply pipe 252 and a gas exhaust pipe (not shown) .

A main heater unit 200 for directly heating the substrate 10 and an auxiliary heater unit 220 for preventing heat loss in the chamber 100 are provided in the chamber 100. After the heat treatment is completed, A cooling pipe 250 for rapidly cooling the inside of the cooling pipe 250 is installed.

The batch heat treatment apparatus 1 according to the related art has a main heater unit 200 composed of a unit main heater 210 capable of covering the entire surface of the substrate 10 on the top and bottom of the substrate 10 The substrate 10 is uniformly heated from the unit main heater 210 over the entire surface, and the heat treatment can be performed uniformly.

In the batch type thermal processing apparatus 1 according to the related art, the effect of improving the productivity of the substrate can be achieved by allowing the plurality of substrates in the chamber 100 to be heat-treated at the same time, but the substrate 10 and the substrate Fumes generated in the film on the main heater unit 200 and the auxiliary heater unit 220 are deposited on the main heater unit 200 and the auxiliary heater unit 220 so that the thermal efficiency of the main heater unit 200 and the auxiliary heater unit 220 And the entire process time and cost due to the fume cleansing for the removal of fumes are greatly increased.

Another conventional technique for solving the above problems of the prior art has a plurality of chambers for forming a heat treatment space by upper and lower housings accommodating one or two substrates, Such as a near-infrared lamp heater, to heat a substrate and a film coated on the substrate by a radiation method that absorbs a near-infrared wavelength emitted from a heat source, and a substrate heat treatment apparatus and method including the same. Have been proposed and used. Such another conventional technique is disclosed, for example, in Korean Patent Application No. 10-2012-A, entitled " An Improved Substrate Heat Treatment Chamber and a Substrate Heat Treatment Apparatus and Method Having Same " Korean Patent No. 10-1428569, filed on August 4, 2014, which is filed with the Korean Intellectual Property Office (KIPO) No. 0073083.

More specifically, FIG. 3A is a cross-sectional view illustrating a configuration of a substrate heat treatment chamber according to another prior art, and FIG. 3B is a cross-sectional view illustrating a substrate heat treatment apparatus having a plurality of substrate heat treatment chambers according to another conventional technique shown in FIG. FIG.

Referring to FIG. 3A, another conventional substrate thermal processing chamber 300 includes upper and lower housings 370a and 370b provided to form a heat treatment space 372 of the substrate 10 therein; A boat 320 provided in the heat treatment space 372 and on which the substrate 10 is loaded and supported; Upper and lower window plates 374a and 374b provided on an inner lower surface of the upper housing 370a and an inner upper surface of the lower housing 370b, respectively; And a plurality of upper and lower heat sources 310a and 310b provided between the upper and lower housings 370a and 370b and the upper and lower window plates 374a and 374b, respectively. The upper and lower housings 370a and 370b are provided on the rear surfaces of the plurality of upper and lower heat sources 310a and 310b and the heat energy emitted from the plurality of upper and lower heat sources 310a and 310b And a plurality of upper and lower reflectors 312a and 312b for reflecting the heat energy to the substrate 10 through the upper and lower window plates 374a and 374b in a radiant manner. Here, the shutter is indicated by reference numeral 340.

3B, another prior art substrate heat treatment apparatus 301 (hereinafter referred to as "the stacked substrate heat treatment apparatus 301") is provided with a heat treatment space 372 of the substrate 10 A plurality of chambers 300a to 300e and a plurality of doors 340 (see FIG. 3A) provided in front of each of the plurality of chambers 300a to 300e, wherein the plurality of chambers 300a to 300e The heat treatment of the substrate 10 is performed individually. Here, the plurality of chambers 300a to 300e are each implemented as the substrate heat treatment chamber 300 shown in FIG. 3A.

1) a plurality of upper and lower heat sources 310a and 310b are formed on the substrate 10 and on the substrate 10 in the heat treatment process by using the substrate heat treatment chamber 300 and the substrate heat treatment apparatus 301 described above, The upper and lower heat sources 310a and 310b are not affected by the fume generated in the film applied to the upper and lower heat sources 310a and 310b and the heat efficiency of the plurality of upper and lower heat sources 310a and 310b is excellent and the fume washing process is unnecessary. The output power of the near infrared lamp heater used in each of the plurality of chambers 300a to 300e can be controlled individually or in a group manner so that the temperature uniformity of the substrate 10 is improved and 3) An advantage is achieved in which individual processing is possible and individual maintenance of the plurality of chambers 300a to 300e is possible.

However, in the case of the substrate heat treatment chamber 300 and the substrate heat treatment apparatus 301 shown in Figs. 3A and 3B described above, the following problems still occur despite the advantages described above.

FIG. 3C is a simplified schematic diagram of the substrate heat treatment chamber shown in FIG. 3A. 3C, it is noted that only one substrate 10 is shown on the boat 320, and the plurality of lower heat sources 310b shown in Fig. 3A are not shown. Hereinafter, the plurality of upper and lower heat sources 310a and 310b will be collectively referred to as a main heat source 310 for the sake of convenience.

3A and 3B, in the substrate thermal processing chamber 300 of the related art, after the substrate 10 is loaded on the boat 320, a heat treatment process is performed in the heat processing space 372 . In this case, the substrate heat treatment chamber 300 is heated by the main heat source 310 provided at the upper and lower portions. That is, in the prior art, the heat generated by the main heat source 310 is transferred to the substrate 10 in a radiation and convection manner, so that the heat treatment process is performed.

Accordingly, there arises a problem that it is not easy to keep the temperature constant over the entire heat-treated area of the substrate 10. [

Specifically, FIG. 3D is a diagram showing the thermal distribution and the temperature profile of the side surface portion of the substrate in the substrate heat treatment chamber shown in FIG. 3C.

Referring to FIG. 3D, in the substrate heat treatment chamber 300 of the prior art, the substrate 10 is mounted on the substrate 10, as can be seen from the thermal distribution and temperature profile at both side portions 10s and four corner portions 10c, Unlike the central portion of the temperature distribution. Accordingly, the substrate 10 must be subjected to a separate heat source to compensate for the uneven temperature distribution in the both side portions 10s and the four corner portions 10c during the heat treatment.

Specifically, in the substrate heat treatment chamber 300 of the prior art substrate heat treatment apparatus 301 shown in FIG. 3B, two side heat sources (not shown) are provided on the side portions 10s of each individual substrate 10 A total of eight side heat sources are used. In each substrate heat treatment chamber 300, two corner heat sources (not shown) are provided for each corner portion 10c to compensate for the heat loss of the four corners 10c of each individual substrate 10 It is required to use a total of 32 corner heat sources. Nevertheless, in the prior art shown in Figs. 3A to 3D, the maximum temperature error between the center portion of the substrate 10 and the both side portions 10s and the four corner portions 10c is in the range of about ± 5 ° C So that the possibility of occurrence of defects in the final product of the substrate 10 is increased.

In order to maintain the temperature inside the chamber 300 at a high temperature, the upper and lower heat sources 310a and 310b or the main heat source 310a, (310) must generate heat at a high temperature, thereby causing thermal deformation of the chamber (300). Therefore, in the prior art, a separate cooling device (not shown) for circulating the cooling water PCW on / off, for example, is used to prevent thermal deformation of the chamber 300.

Further, in the prior art, the PI thin film is coated on the substrate 10 using a polyimide coating apparatus before the heat treatment process of the substrate 10 is performed in the heat treatment chamber 300, It is required to perform the hardening process for the deposition of the coated PI thin film by a vacuum chamber drying apparatus (HVCD: Hot Vacuum Chamber Dryer). Accordingly, in the prior art, a separate hardening process and the use of a high-temperature vacuum chamber drying apparatus (HVCD) for the same are required, resulting in an increase in the overall manufacturing cost and process time.

Therefore, there is a need for a new method for solving the problems of the above-described conventional techniques.

1. Korean Patent No. 10-1016048 2. Korean Patent No. 10-1428569

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a heat treatment apparatus, It is possible to heat-treat the substrate through the heat transfer method using the heat transfer fluid and the heat radiation method using the movable lamp or the main lamp unit, by providing the movable lamp or the fixed main lamp member for supplying heat at the upper part of the substrate and the supporting member, The heat transfer efficiency and temperature uniformity of the substrate can be remarkably improved and the generation of heat loss at both side and corner portions of the substrate can be substantially prevented and the substrate temperature uniformity can be further greatly improved, Substrate supporting apparatus, and substrate heat treatment furnished therewith Chambers and devices.

A substrate supporting apparatus for a heat treatment according to a first aspect of the present invention includes: a substrate supporting member having an internal supply pipe or a cavity for circulating a heat transfer fluid therein; A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And a pump provided on the external supply pipe and circulatingly supplying the heat transfer fluid to the internal supply pipe or the cavity.

The substrate heat treatment chamber according to the second aspect of the present invention includes a substrate holding apparatus for holding a substrate in a heat treatment space, wherein the substrate holding apparatus for heat treatment includes an internal supply tube or cavity for circulating a heat transfer fluid therein, A substrate support member having a substrate; A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And a pump provided on the external supply pipe and circulatingly supplying the heat transfer fluid to the internal supply pipe or the cavity.

A substrate heating apparatus according to a third aspect of the present invention includes a plurality of chambers each of which is provided with a substrate and is heat-treated and provided in a laminated form, and each of the plurality of chambers has a heat treatment for supporting the substrate in the heat treatment space Wherein the substrate support apparatus for heat treatment includes a substrate support member having an internal supply pipe or cavity for circulating a heat transfer fluid therein; A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And a pump provided on the external supply pipe and circulatingly supplying the heat transfer fluid to the internal supply pipe or the cavity.

The following effects can be achieved by using the improved substrate supporting apparatus for heat treatment according to the present invention and the substrate heat treatment chamber and apparatus having the same.

1. It is possible to heat-treat the substrate through thermal conduction and additional heat-radiation method, thereby significantly improving the heat transfer efficiency and temperature uniformity of the substrate.

2. Substrate temperature uniformity including heat loss compensation on both sides and corners of the substrate is greatly improved.

3. The quality of the final product is greatly improved.

4. Since the high temperature heat of the heat transfer fluid is transferred to the substrate in a thermal conduction manner, it is not necessary to raise the temperature of the entire heat treatment space to a high temperature, thereby significantly reducing the possibility of thermal deformation of the chamber.

5. It is not necessary to use a separate cooling device to prevent thermal deformation of the heat treatment chamber.

6. Unlike the prior art, there is no need to use a separate hardening process and a high-temperature vacuum drying apparatus (HVCD) for this, so that the total manufacturing cost and process time are greatly reduced.

Further advantages of the present invention can be clearly understood from the following description with reference to the accompanying drawings, in which like or similar reference numerals denote like elements.

1 is a perspective view showing a configuration of a batch type heat treatment apparatus according to the prior art.
FIG. 2A is a perspective view showing a configuration of a chamber of the batch type heat treatment apparatus according to the prior art shown in FIG. 1. FIG.
FIG. 2B is a perspective view showing the arrangement of the substrate, the main heater unit, and the auxiliary heater unit of the batch type heat treatment apparatus according to the related art.
FIG. 3A is a cross-sectional view showing a configuration of a substrate heat treatment chamber according to still another prior art.
FIG. 3B is a perspective view illustrating a substrate heat treatment apparatus having a plurality of substrate heat treatment chambers according to another conventional technique shown in FIG. 3A.
FIG. 3C is a simplified schematic diagram of the substrate heat treatment chamber shown in FIG. 3A.
FIG. 3D is a diagram showing the thermal distribution and the temperature profile of the side surface portion of the substrate in the substrate heat treatment chamber shown in FIG. 3C.
FIG. 4A is a schematic view showing a top view of a substrate supporting apparatus for a heat treatment according to a first embodiment of the present invention, a cross-sectional view of the substrate heat treatment chamber having the same, and a substrate supporting apparatus for heat treatment.
FIG. 4B is a cross-sectional view of a substrate heat treatment apparatus in which a plurality of substrate heat treatment chambers according to a first embodiment of the present invention shown in FIG. 4A are stacked. FIG.
FIG. 4C is a schematic top view of a substrate supporting apparatus for a heat treatment according to a second embodiment of the present invention, a cross-sectional view of the substrate heat treatment chamber having the same, and a substrate supporting apparatus for heat treatment.
FIG. 4D is a schematic view illustrating a cross-sectional view of a substrate heat treatment apparatus having a plurality of substrate heat treatment chambers stacked according to a second embodiment of the present invention shown in FIG. 4C.
FIG. 4E is a view illustrating an exemplary reference heat treatment temperature recipe used in the substrate heat treatment chamber and the substrate heat treatment apparatus having the same according to the first and second embodiments of the present invention shown in FIGS. 4A to 4D.
FIG. 4F is a view showing the thermal distribution and the temperature profile of the side surface of the substrate in the substrate heat treatment chamber according to the first and second embodiments of the present invention shown in FIGS. 4A to 4D.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to embodiments and drawings of the present invention.

FIG. 4A is a schematic top view of a substrate supporting apparatus for heat treatment according to a first embodiment of the present invention, a cross-sectional view of the substrate heat treatment chamber having the same, and a substrate supporting apparatus for heat treatment. FIG. 1 is a schematic view showing a cross section of a substrate heat treatment apparatus in which a plurality of substrate heat treatment chambers according to a first embodiment of the present invention are stacked.

Referring to FIGS. 4A and 4B, the apparatus for supporting a substrate 430 for heat treatment according to the first embodiment of the present invention includes an internal supply pipe 442a for internally supplying heat transfer fluid in a circulating manner A substrate support member 432; A heater member 444 connected to the internal supply pipe 442a through an external supply pipe 442c; And a pump 446 provided on the outer supply pipe 442c and circulatingly supplying the heat transfer fluid to the inner supply pipe 442a.

The substrate thermal processing chamber 400 according to the first embodiment of the present invention includes a substrate supporting apparatus 430 for supporting a substrate 10 in a thermal processing space 472, The apparatus 430 includes a substrate support member 432 having an internal supply pipe 442a for circulating a heat transfer fluid therein; A heater member 444 connected to the internal supply pipe 442a through an external supply pipe 442c; And a pump 446 provided on the outer supply pipe 442c and circulatingly supplying the heat transfer fluid to the inner supply pipe 442a.

In addition, the substrate heat treatment apparatus 401 according to the first embodiment of the present invention includes a plurality of chambers 400, each of which is provided with a substrate 10 and is heat-treated and provided in a laminated form, The chamber 400 includes a heating substrate support apparatus 430 for supporting the substrate 10 in the heat treatment space 472. The substrate support apparatus 430 for heat treatment circulates heat transfer fluid A substrate support member 432 having an internal supply pipe 442a for supplying the gas to the chamber; A heater member 444 connected to the internal supply pipe 442a through an external supply pipe 442c; And a pump 446 provided on the outer supply pipe 442c and circulatingly supplying the heat transfer fluid to the inner supply pipe 442a.

FIG. 4C is a schematic top view of a substrate supporting apparatus for heat treatment according to a second embodiment of the present invention, a cross-sectional view of the substrate heat treatment chamber having the same, and a substrate supporting apparatus for heat treatment. FIG. 1 is a schematic view showing a cross section of a substrate heat treatment apparatus in which a plurality of substrate heat treatment chambers according to a second embodiment of the present invention are stacked.

4C and 4D, the substrate supporting apparatus 430 for heat treatment according to the second embodiment of the present invention includes a substrate supporting member 432 having a cavity 442b for internally supplying a heat transfer fluid in a circulating manner, ); A heater member 444 connected to the cavity 442b via an external supply pipe 442c; And a pump 446 provided on the external supply pipe 442c for circulating the heat transfer fluid to the cavity 442b.

In addition, the substrate thermal processing chamber 400 according to the second embodiment of the present invention includes a substrate supporting apparatus 430 for supporting a substrate 10 in a thermal processing space 472, The apparatus 430 includes a substrate support member 432 having a cavity 442b for circulating a heat transfer fluid therein; A heater member 444 connected to the cavity 442b via an external supply pipe 442c; And a pump 446 provided on the external supply pipe 442c for circulating the heat transfer fluid to the cavity 442b.

The substrate heat treatment apparatus 401 according to the second embodiment of the present invention includes a plurality of chambers 400 each provided with a substrate 10 and heat-treated and provided in a laminated form, The chamber 400 includes a heating substrate support apparatus 430 for supporting the substrate 10 in the heat treatment space 472. The substrate support apparatus 430 for heat treatment circulates heat transfer fluid A substrate support member 432 having a cavity 442b for supplying the substrate 442 in the form of a substrate; A heater member 444 connected to the cavity 442b via an external supply pipe 442c; And a pump 446 provided on the external supply pipe 442c for circulating the heat transfer fluid to the cavity 442b.

The substrate supporting apparatus 430 for supporting a heat treatment according to the second embodiment of the present invention shown in FIGS. 4C and 4D, and the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 401 having the same are shown in FIGS. 4A and 4B In place of the internal supply pipe 442a used in the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 401 having the substrate supporting apparatus 430 according to the first embodiment of the present invention shown in FIG. ) Are used in the second embodiment of the present invention.

4A to 4D, a substrate supporting apparatus 430 for supporting a substrate according to the first and second embodiments of the present invention, a substrate heat treatment chamber 400 and a substrate heat treatment apparatus 401 having the same, For example, silicone oil or synthetic mineral oil may be used. For silicone oils, the maximum boiling point (boiling point) is approximately 400 ° C. Therefore, when performing the heat treatment of the substrate 10 according to the exemplary reference heat treatment temperature recipe shown in FIG. 4E, the initial heat treatment process (for example, Step 1 in FIG. 4E) is performed in accordance with the heat treatment temperature recipe of the substrate 10 (Step 1) In the step 2 and the step 3 in FIG. 4E, a high-temperature process (for example, a process in which the transparent polyimide (PI), the maximum temperature is about 300 to 380 DEG C, so that the heat treatment can be performed using silicone oil as the heat transfer fluid. However, when the PI thin film coated on the substrate 10 is opaque, 480 캜, the heat treatment of the substrate 10 using only the silicone oil as the heat transfer fluid is not possible or insufficient. In this case, additional heat energy supply is required on the substrate 10.

Therefore, the substrate supporting apparatus 430 for heat treatment according to the first and second embodiments of the present invention can be mounted on the substrate 10 on the substrate 10 provided on the substrate supporting member 432 A movable lamp 448 or a fixed main lamp member (not shown) provided to supply heat. 4A to 4D, one movable lamp 448 is illustrated as being reciprocally moved from left to right in each of the figures on the substrate 10. However, those skilled in the art will recognize that two It will be appreciated that a plurality of such movable lamps may be used. For example, when two movable lamps are used, one movable lamp 448 shown in Figs. 4A to 4D is arranged on the right side of the substrate 10 from the left side of each figure to the middle part of the substrate 10 The other movable lamp 448, which is not shown, can reciprocate leftward from the right side of each of the figures to the middle portion of the substrate 10 on the substrate 10. Here, it is apparent that the fixed main lamp member (not shown) can be implemented in substantially the same configuration as the main lamp member 310 shown in FIG. 3C. It should be noted that the use of such a movable lamp 448 or a fixed main lamp member (not shown) may not be necessarily used as it can be selectively used depending on the maximum temperature of the heat treatment of the substrate 10, .

In the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 401 according to the first and second embodiments of the present invention shown in FIGS. 4A to 4D, A purge gas (for example, nitrogen) is supplied to discharge contaminants (hereinafter collectively referred to as "fumes") such as residual solvent generated inside the PI thin film coated on the substrate 10 during the heat treatment operation of the substrate 10, N ₂ gas) is injected from one side of each chamber 400 and exhausted to the other side.

The substrate supporting member 432 constituting the substrate supporting apparatus 430 for heat treatment according to the first and second embodiments of the present invention may be formed of a metal material having a high conductivity such as aluminum But it should be noted that the present invention is not limited thereto.

In the substrate supporting apparatus 430 for heat treatment according to the first and second embodiments of the present invention described above, the inner supporting tube 442a provided in the substrate supporting member 432 and supplying the heat transmitting fluid in a circulating manner, The thermal energy is transmitted to the substrate 10 in a thermally conductive manner via the substrate support member 432, which is realized by a metal material. Thermal energy may also be transferred onto the substrate 10 in a thermal radiation fashion by a movable ramp 448 or a fixed main ramp member (not shown) provided on top of the substrate support member 432, if necessary. Accordingly, in the substrate supporting apparatus 430 for a heat treatment according to the first and second embodiments of the present invention and the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 401 having the substrate supporting apparatus 430 according to the first and second embodiments of the present invention, Since the heat transfer is additionally performed by the thermal radiation method as required, the heat transfer efficiency and the temperature uniformity can be remarkably improved.

Further, since the substrate 10 is subjected to the heat conduction method and the thermal processing in addition to the thermal radiation method as required, the occurrence of heat loss at both side portions and the corner portions of the substrate 10 is substantially prevented and the temperature uniformity of the substrate 10 is further increased Can be improved.

Therefore, in the case of using the substrate supporting apparatus for thermal processing 430 according to the first and second embodiments of the present invention and the substrate heat treatment chamber 400 and the substrate heat treatment apparatus 401 having the same, The quality of the final product can be greatly improved.

FIG. 4F is a view showing the thermal distribution and the temperature profile of the side surface of the substrate in the substrate heat treatment chamber according to the first and second embodiments of the present invention shown in FIGS. 4A to 4D.

Referring to FIG. 4F with FIG. 4A to FIG. 4E, in the present invention, thermal energy is realized by a metal material by an internal supply pipe 442a or a cavity 442b for circulating the heat transfer fluid in the substrate 10 Heat treatment of the substrate 10 is performed in a thermally conductive manner through the substrate support member 432 and the heat treatment of the substrate 10 in the thermal radiation mode is further performed by use of a movable lamp 448 or a fixed main lamp member . Therefore, in the substrate thermal processing chamber 400 and the substrate thermal processing apparatus 401 according to the first and second embodiments of the present invention, as can be seen from the thermal distribution and temperature profile shown in FIG. 4F, The both side portions 10s and the four corner portions 10c have a substantially uniform temperature distribution by the center portion of the substrate 10. [ Particularly, in the substrate heat treatment chamber 400 and the apparatus 401 according to the first and second embodiments of the present invention, unlike the prior art, the four corner portions 10c of the substrate 10 are provided with the separate corner lamps A substantially uniform temperature distribution can be obtained. Specifically, in the first and second embodiments of the present invention, the maximum temperature error between the center portion of the substrate 10 and the both side portions 10s and the four corner portions 10c is within a range of approximately ± 3 ° C or less So that the quality of the final product of the substrate 10 is greatly improved and the possibility of occurrence of defects is remarkably lowered.

In addition, since the heat of the high temperature generated in the heat transfer fluid is transferred to the substrate 10 in a thermal conduction manner, it is not necessary to raise the temperature of the entire heat treatment space 472 to a high temperature, The possibility is significantly reduced.

In addition, in the present invention, it is unnecessary to use a separate cooling device for preventing thermal deformation of the heat treatment chamber 400. In particular, unlike the prior art, a separate hardening process and the use of a high-temperature vacuum drying device (HVCD) So that the overall manufacturing cost and the process time of the heat treatment chamber 400 and the heat treatment apparatus 401 are greatly reduced.

Various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention as defined by the following claims. It is not. Accordingly, the scope of the present invention should not be limited by the above-described exemplary embodiments, but should be determined only in accordance with the following claims and their equivalents.

1, 301, 401: Substrate heat treatment apparatus 10: Substrate 10c:
10s: side portion 12: holder 110: frame 120, 320: boat
100, 300, 300a, 300b, 300c, 300d, 300e, 400: chamber 122:
140, 340: door 160: cover 200: main heater unit
210: unit main heater 220, 220a, 220b: auxiliary heater unit
230a: first unit auxiliary heater 250: cooling tube 310, 410: main lamp member
310a, 310b: heat source 312a, 312b: reflector 370a, 370b: housing
372,472: heat treatment space 374a, 374b: window plate
430: substrate holding device 432: substrate holding member 442a: internal supply pipe
442b: cavity 442c: external supply pipe 444: heater member
446: pump 448: movable lamp

Claims (17)

A substrate supporting apparatus for heat treatment,
A substrate support member having an internal supply pipe or cavity for circulating the heat transfer fluid therein;
A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And
A pump which is provided on the external supply pipe and circulates the heat transfer fluid to the internal supply pipe or the cavity,
Wherein the substrate holding apparatus comprises: The method according to claim 1,
Wherein the substrate support member is made of a metal material. The method according to claim 1,
Wherein the heat transfer fluid is silicone oil or synthetic mineral oil. The method according to claim 1,
Wherein the thermal processing substrate support apparatus further comprises a movable ramp or a fixed main ramp member provided to supply heat from the top of the substrate onto the substrate. 5. The method of claim 4,
Wherein the movable lamp is provided as one or a plurality of heaters. In the substrate heat treatment chamber,
A substrate support apparatus for supporting a substrate in a heat treatment space,
The substrate support apparatus for heat treatment
A substrate support member having an internal supply pipe or cavity for circulating the heat transfer fluid therein;
A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And
A pump provided on the external supply pipe for circulating the heat transfer fluid to the internal supply pipe or the cavity,
And a substrate heating chamber. The method according to claim 6,
Wherein the substrate support member is made of a metal material. The method according to claim 6,
Wherein the heat transfer fluid is silicone oil or synthetic mineral oil. The method according to claim 6,
Wherein the thermal processing substrate support apparatus further comprises a movable ramp or fixed main ramp member provided to supply heat from the top of the substrate onto the substrate. 10. The method of claim 9,
Wherein the movable lamp is provided as one or a plurality of substrates. 11. The method according to any one of claims 6 to 10,
Wherein a purge gas is injected from one side of the substrate heat treatment chamber and exhausted to the other side in order to discharge fumes generated during a heat treatment operation of the substrate in the substrate heat treatment chamber. In the substrate heat treatment apparatus,
And a plurality of chambers, each of which is provided with a substrate and is heat-treated and provided in a laminated form,
Wherein the plurality of chambers each include a substrate support apparatus for heat treatment for supporting the substrate in a heat treatment space,
The substrate support apparatus for heat treatment
A substrate support member having an internal supply pipe or cavity for circulating the heat transfer fluid therein;
A heater member connected to the internal supply pipe or the cavity through an external supply pipe; And
A pump provided on the external supply pipe for circulating the heat transfer fluid to the internal supply pipe or the cavity,
And the substrate is heated. 13. The method of claim 12,
Wherein the substrate support member is made of a metal material. 13. The method of claim 12,
Wherein the heat transfer fluid is silicone oil or synthetic mineral oil. 13. The method of claim 12,
Wherein the thermal processing substrate support apparatus further comprises a movable ramp or a fixed main ramp member provided to supply heat from the top of the substrate onto the substrate. 16. The method of claim 15,
Wherein the movable lamp is provided as one or a plurality of the lamps. 17. The method according to any one of claims 12 to 16,
Wherein a purge gas is injected from one side of each of the substrate heat treatment chambers and exhausted to the other side in order to discharge fumes generated in a heat treatment operation of the substrate in each of the plurality of chambers.

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