KR20180134183A - Manufacturing method of contact apparatus and contact apparatus - Google Patents

Abstract

The present invention relates to a method of manufacturing a contact apparatus, and more particularly, to a method of manufacturing a contact apparatus which can have a contact structure with a fine pitch. The method of manufacturing the contact apparatus includes the following steps: forming a sacrificial layer on a growth substrate; forming a contact holder having a predetermined thickness on the sacrificial layer; forming a plurality of contact structures on the contact holder; removing the sacrificial layer to separate a coupling structure, which includes the contact holder and the contact structure, from the growth substrate; injecting a liquid insulating material between the contact structures such that the insulating material surrounds a gap between the contact structures; curing the insulating material; and separating the contact holder from the contact structure.

Description

Technical Field [0001] The present invention relates to a contact device manufacturing method and a contact device,

The present invention relates to a contact device manufacturing method, and more particularly, to a contact device manufacturing method having a contact structure having a fine pitch.

The semiconductor device is subjected to a manufacturing process and then an inspection for determining the electrical performance is performed. A performance test of a semiconductor device is performed in a state where a predetermined contact device formed to be in electrical contact with a terminal of the semiconductor device is disposed between the semiconductor device and the test circuit board.

Recently, the trend of semiconductor package development is light and simple. Accordingly, contact terminals provided in a semiconductor package, for example, in the form of a ball are also developed to have a fine pitch.

1 is a view showing electrical contact between a contact device and a semiconductor package according to the prior art. In the case of the contact device C used in the inspection of the conventional semiconductor package, generally, as shown in Fig. 1, a conductive pattern having a 1: 1 correspondence with the contact terminal (B) (D). Therefore, the contact terminals provided in the semiconductor package and the conductive parts provided in the contact device come into contact with each other at a corresponding arrangement and pitch.

However, due to design variables and various causes, the contact between the contact terminal of the semiconductor package and the conductive part of the contact device may be missing. In addition, in the case of the conventional method of manufacturing a contact device, there is a limitation in realizing the contact structure corresponding to the fine pitch, which is a trend of the recent semiconductor package development described above.

Accordingly, there is a need to develop a contact device having a contact structure having a fine pitch corresponding to the fine pitch of the contact terminals provided in the semiconductor package, and a manufacturing method thereof.

Published Patent No. 2011-0020735

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a contact device having a contact structure having a fine pitch and a contact device manufactured thereby.

A method of manufacturing a contact device according to an embodiment of the present invention includes:

(a) forming a sacrificial layer on a growth substrate;

(b) forming a contact holder having a predetermined thickness on the sacrificial layer;

(c) forming a plurality of contact structures on the contact holder;

(d) removing the sacrificial layer to separate the coupling structure composed of the contact holder and the contact structure from the growth substrate;

(e) injecting a liquid insulating material between the contact structures so that the insulating material surrounds the contact structures;

(f) curing the insulating material; And

(g) separating the contact holder from the contact structure.

Preferably, the step (b)

(b-1) forming a first photoresist layer on the sacrificial layer;

(b-2) arranging a first photomask on the first photoresist layer;

(b-3) exposing the first photoresist layer;

(b-4) developing the first photoresist layer to form a first removal region where at least a portion of the first photoresist layer is removed;

(b-5) forming a first plating layer for forming the contact holder by plating an electrically conductive material on the first removal region;

(b-6) planarizing the first plating layer; .

Advantageously, the step (c)

(c-1) forming a second photoresist layer on the contact holder;

(c-2) arranging a second photomask on the second photoresist layer;

(c-3) exposing the second photoresist layer;

(c-4) developing the second photoresist layer to form a second removal region in which at least a portion of the contact holder is exposed upwardly; And

(c-5) forming a second plating layer that forms the contact structure by plating an electro-conductive material on the second removal region;

.

Preferably, the first photoresist layer and the second photoresist layer are composed of a positive photoresist or a negative photoresist.

Preferably, a plurality of the second removal regions are formed on one of the contact holders, and the coupling structure is configured such that a plurality of the contact structures are attached on one of the contact holders.

Preferably, the second removal region has a curved shape and a plurality of the second removal regions are arranged in parallel with each other.

Advantageously, the step (d)

(d-1) removing the first photoresist layer and the second photoresist layer; And

(d-2) etching the sacrificial layer.

Preferably, the step (a)

(a-1) depositing a conductive layer on the growth substrate; And

(a-2) plating the sacrificial layer on the conductive layer.

Advantageously, the step (e)

(e-1) receiving the coupling structure in the chamber; And

(e-2) injecting a liquid insulating material into the chamber.

Preferably, the chamber includes a chamber space in which the coupling structure can be received, and a plurality of holder holders provided in the chamber space and to which the contact holder can be fixed.

Preferably, after the step (g), (h) injecting a liquid insulating material into a place where the contact holder is detached; .

According to the contact device manufacturing method of the present invention, the contact device can be manufactured by injecting the liquid insulating material in a state in which the contact holder with the contact structure is housed in the chamber, so that the contact device having the fine pitch The device can be manufactured.

Further, since the contact structure can be formed on the contact holder through the two photoresist processes, the contact structure having a fine pitch can be constructed more simply, and thus the contact structures of the finally manufactured contact device have a fine pitch .

Since the contact device manufactured in accordance with the present invention has a contact structure with a fine pitch, electrical contact is made between the contact structure and the contact terminal irrespective of the pitch between the contact terminals of the semiconductor package, . That is, since a plurality of contact structures having fine pitches can be brought into contact with one contact terminal of the semiconductor package, contact failure can be prevented. In addition, a reliable electrical connection can be achieved also for a semiconductor package having a contact terminal with a fine pitch.

Further, since the contact structure has a curved shape, the contact structure can be resilient and more preferable electrical contact can be achieved.

1 is a view showing electrical contact between a contact device and a semiconductor package according to the prior art.
FIGS. 2 to 11 are views showing steps of the method for manufacturing a contact device according to the present invention.
12 is a view showing the structure of a contact device manufactured by the method for manufacturing a contact device according to the present invention.
13 and 14 are views showing electrical contact between the contact device and the semiconductor package according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

Figs. 2 to 11 are views showing steps of the method for manufacturing the contact device 2 according to the present invention.

First, a growth substrate 10 is provided and a conductor layer 12 is formed on a growth substrate 10 as shown in FIG. 2A. The growth substrate 10 may be, for example, a glass wafer. The conductor layer 12 is deposited on the growth substrate 10 to make the surface of the growth substrate 10 conductive for electroplating. At this time, the conductor layer 12 may be deposited by, for example, sputtering Ti / Cu.

Then, a sacrifice layer 14 is formed on the conductor layer 12 as shown in Fig. 2 (b). The formation of the sacrificial layer 14 may be performed by plating the upper surface of the conductor layer 12. The sacrificial layer 14 may be made of, for example, a Cu material.

Next, as shown in FIG. 3, the first photolithography process is performed. The first photolithography process may include a step of forming the first photoresist layer 16 on the sacrificial layer 14, arranging the first photomask M1, exposing, developing, and cleaning .

First, as shown in FIG. 3A, a first photoresist layer 16 is formed on the sacrificial layer 14. Next, as shown in FIG. The first photoresist layer 16 is made of a polymer polymer that reacts with light, and may be formed of, for example, Novolak (M-Cresol formaldehyde), PMMA (PolyMethyl Methacrylate) , SU-8, photo sensitive polyimide.

Next, the first photomask M1 is arranged on the first photoresist layer 16 as shown in FIG. 3 (b), and then exposed. The two-dimensional shape of the first optical mask M1 may represent a two-dimensional image of the contact holder 18 described later. Either a negative photoresist or a positive photoresist may be used in forming the first photoresist layer 16, arranging the first photomask M1, and exposing it. For example, when a positive photoresist is used, the portion not exposed by the first photomask M1 and exposed to exposure is hardened. Conversely, when a negative photoresist is used, the portion covered by the first photomask M1 and not exposed to exposure is cured.

Next, as shown in FIG. 3 (c), the exposed first photoresist layer 16 is developed and cleaned. The exposed portion or the unexposed portion of the first photoresist layer 16 is dissolved and cleaned in accordance with the developing and cleaning process, and thus the first removing region V1 is formed. As described above, when a positive photoresist is used, the unexposed portion is removed during development and cleaning, and when the negative photoresist is used, the exposed portion is removed during development and cleaning.

Then, as shown in Fig. 4 (a), a first plating process is performed. The first plating process is a process of forming a first plating layer by plating an electrically conductive material in the first removal region (V1) generated through the first photolithography process. In the first plating step, an electrically conductive material such as copper, nickel, aluminum, rhodium, palladium, tungsten or other metals may be used. Preferably, the material used in the formation of the sacrificial layer 14 and the material used in the first plating process may be different from each other. A contact holder 18 made of the electrically conductive material is formed in the first removal area V1 according to the plating of the electrically conductive material.

Then, a first planarization process may be performed as shown in FIG. 4 (b). The excess plated portion is removed in accordance with the planarization process. Therefore, preferably, the thickness of the contact holder 18 filled in the first removal region V1 and the thickness of the remaining first photoresist layer 16 may be the same size and have a generally flat upper surface.

The structure that has undergone the above process may have the form, for example, as shown in FIG. The structure in which the growth substrate 10, the conductor layer 12, the sacrificial layer 14, the first photoresist layer 16, and the contact holder 18 are stacked has a rectangular planar shape as a whole, 18 may be provided in such a manner as to extend across the upper surface in one direction. Preferably, as shown in Fig. 5, the contact holders 18 may be provided on both sides and extend parallel to each other.

Then, a second photolithography process is performed as shown in FIG. The second photolithography process is similar to the first photolithography process. That is, the second photoresist layer 20 may be formed, followed by arranging the second photomask M2, exposing, developing, and cleaning the second photomask M2. However, the second photoresist layer 20 is formed on the first photoresist layer 16 and the contact holder 18 described above.

First, a second photoresist layer 20 is formed on the contact holder 18 and the first photoresist layer 16 as shown in FIG. 6 (a). The second photoresist layer 20 is composed of a polymeric polymer that reacts with the light like the first photoresist layer 16 and includes, for example, Novolak (M-Cresol formaldehyde), PMMA [PolyMethyl Methacrylate], SU-8, and photo sensitive polyimide.

Next, as shown in FIG. 6B, the second photomask M2 is arranged on the second photoresist layer 20, and then exposed. The two-dimensional shape of the second optical mask M2 may be the same as the two-dimensional shape of the contact structure 100 described later. Preferably, the two-dimensional shape of the contact structure 100 may have a curved shape with the center portion having a convexity.

Either a negative photoresist or a positive photoresist may be used in the formation of the second photoresist layer 20, the arrangement of the second photomask M2, and the exposure process. Preferably, the photoresist that constitutes the first photoresist layer 16 and the second photoresist layer 20 may be both positive or both negative photoresist.

Then, as shown in FIG. 6C, the second photoresist layer 20 is developed and cleaned. The exposed portion or the unexposed portion of the second photoresist layer 20 is melted and cleaned in accordance with the development and cleaning process, thus forming the second removal region V2. As described above, when a positive photoresist is used, the unexposed portion is removed during development and cleaning, and when the negative photoresist is used, the exposed portion is removed during development and cleaning. The second removal region V2 is formed on the contact holder 18 and the top view of the second removal region V2 is the same as the two-dimensional image of the contact structure 100.

Preferably, in the above second photolithography process, the second removal regions V2 may have fine pitches with respect to each other. That is, the second removal regions V2 may be arranged to have a relatively small interval with respect to each other. For example, the interval between the second removal regions V2 may be 50 to 0.1 .mu.m, but is not limited thereto.

The shape of the second removal region V2 formed through the above process is as shown in FIG. That is, a plurality of curved second removal regions V2 are formed in parallel to each other in a curved shape in one direction, and the contact holders 18 extend in a direction crossing the plurality of second removal regions V2 Lt; / RTI >

Next, as shown in FIG. 8A, a second plating process is performed to form a second plating layer by plating an electroconductive material in the second removed region V2 generated through the second photolithography process. In the second plating process, an electrically conductive material such as copper, nickel, aluminum, rhodium, palladium, tungsten or other metals may be used. Preferably, the material used in the first plating process for forming the contact holder 18 and the material used in the second plating process may be different from each other. The contact structure 100 made of the electrically conductive material is formed in the second removal region V2 according to the plating of the electrically conductive material. As described above, since the second removal region V2 is formed on the contact holder 18, the contact structure 100 is formed on the contact holder 18.

Subsequently, although not shown in FIG. 8, a planarization process can be performed. The contact structure 100 may have a generally planar top surface in accordance with the planarization process.

Then, a photoresist removing step is performed as shown in FIG. 8 (b). Accordingly, the remaining first photoresist layer 16 and the second photoresist layer 20 are removed. The photoresist removal process can be performed by, for example, a wet chemical process, an acetone-based removal process, and a plasma O2 removal process. After the photoresist removal step, only the contact holder 18 and the contact structure 100 remain on the sacrificial layer 14. [

Then, the sacrifice layer 14 is removed as shown in Fig. 8 (c). Removal of the sacrificial layer 14 may be accomplished, for example, by an etching process, and as the sacrificial layer 14 is removed, the bonding structure 1 comprising the contact holder 18 and the contact structure 100 is removed from the growth substrate 10, .

The coupling structure 1 may have a shape as shown in FIG. That is, a plurality of contact structures 100 are attached to the contact holder 18, each of the plurality of contact structures 100 has a curved linear shape and is arranged in parallel with each other, Are disposed across the plurality of contact structures (100). That is, a plurality of contact structures 100 are attached to the contact holder 18 to maintain the arrangement of the contact structures 100. 9, the contact holders 18 may be attached to the upper and lower ends of the contact structure 100. That is, the contact holders 18 are not limited to the contact holders 18, One or more of the contact structures 100 may be disposed in the middle portion of the contact structure 100, and the contact structures 100 may have various attachment forms as long as the plurality of contact structures 100 can be connected to each other to maintain the arrangement thereof.

Then, as shown in FIG. 10, the coupling structure is housed in a predetermined chamber 30, and then a liquid-phase insulating material is first injected.

The chamber 30 has a rectangular chamber body 32 and a rectangular chamber space 34 provided in the chamber body 32. The chamber chamber 34 has a plurality of holder holders 36 . The coupling structure 1 is received in the chamber space 34 and the contact holder 18 is fitted or supported on the holder holder 36 so that the coupling structure 1 can be arranged in parallel. For example, the holder holder 36 may include a plurality of protrusions provided at an upper end of the chamber space 34, and the contact holder 18 may be inserted between the holder holders 36 and fixed. A plurality of the coupling structures 1 are accommodated in the chamber space 34 side by side. After the storage is completed, a primary injection of a liquid insulating material into the chamber space 34 is performed. The liquid insulating material may be liquid silicone, for example, paraffin, beeswax, or the like. By injecting the liquid insulating material, the space between the contact structures 100 is filled with an insulating material.

After injecting a liquid insulating material, the insulating material is cured. When the insulating material is cured, a predetermined insulating portion 200 is formed.

Then, the contact holder 18 is removed as shown in FIG. The removal of the contact holder 18 can be accomplished, for example, through a predetermined etching process. As described above, since the contact structure 100 and the contact holder 18 are made of materials different from each other, the contact holder 18 can be selectively removed.

Next, a liquid insulating material is secondarily injected and cured. By the second injection process, the space in which the contact holder 18 is located is filled with the insulating material. 11, the removal of the contact holder 18 and the secondary injection of liquid insulating material are performed in a state where the coupling structure 10 is located in the chamber 30. However, the present invention is not limited thereto, It is also possible to remove the contact holder 18 and to inject the liquid insulating material by a second injection after extracting the cured insulating material from the coupling structure 1.

Following the above process, the plate-like contact unit 2 as shown in Fig. 12 is manufactured. The contact unit 2 manufactured in accordance with the above process has a structure in which a plurality of contact structures 100 extending vertically inside the insulating plate 200 is arranged. At this time, the contact structure 100 has a curved shape when viewed from the side, as shown in Fig. This is a shape realized by the second photolithography process as described above. In addition, the contact structure 100 may have a fine pitch, for example, the spacing S between the contact structures 100 may be between 10 and 0.1 um, or less, but is not limited thereto.

On the other hand, after the contact unit 2 is manufactured through the above-described processes, a plurality of contact units 2 may be combined to manufacture a contact device having a predetermined area. For example, when a large-area contact unit is required, it is also possible to arrange a plurality of the contact units on a plane to manufacture a contact device having a predetermined area.

According to the method for manufacturing a contact device according to the present invention, a contact unit and a contact device can be manufactured by injecting a liquid insulating material in a state in which the contact holder 18 with the contact structure 100 is accommodated in the chamber 30 Therefore, the contact device can be manufactured without complicated processes.

In addition, since the contact structure 100 can be formed on the contact holder through the two photoresist processes, it is possible to simply construct the contact structure having a fine pitch, and therefore, the contact structure 100 of the finally- Can have a fine pitch.

As described above, the contact structure 100 provided in the contact device 2 manufactured by the manufacturing method according to the present invention can have a fine area and fine pitch. Therefore, more stable electrical connection can be achieved when mediating the connection of the predetermined semiconductor device on the contact device 2 and the PCB of the lower part.

For example, when a contact terminal of a semiconductor package is composed of a contact terminal in the form of a ball, in a conventional contact device having a 1: 1 contact structure, the pitch between the contact terminal of the semiconductor package and the contact terminal of the contact device is The contact device must be selected in accordance with the contact terminals of the semiconductor package, so that the versatility may be deteriorated or contact failure may occur due to mismatch between pitches caused by design variables and the like. Particularly, according to the conventional method for manufacturing a contact device, it is very difficult to manufacture a contact device having a connection terminal having a fine pitch, and thus it is difficult to solve the above problems.

However, as shown in Figs. 13 and 14, in the contact device 2 according to the present invention, electrical contact is made irrespective of the pitch between the contact terminals B of the semiconductor package A, . That is, since a plurality of contact structures 100 can be in contact with each other as indicated by a circle with respect to one contact terminal B, contact failure is prevented. Reliable electrical connection can also be achieved for a semiconductor package having contact terminals with a small size, or a fine pitch.

Further, as shown in Fig. 13, since the contact structure 100 has a curved shape, it has elasticity in contact so that more desirable electrical contact can be achieved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

1: Contact unit
2: Contact device
10: growth substrate
12: conductor layer
14: sacrificial layer
16: First photoresist layer
18: Contact holder
20: second photoresist layer
30: chamber
32: chamber body
34: chamber space
36: Holder holder
100: Contact structure
200:

Claims (12)

(a) forming a sacrificial layer on a growth substrate;
(b) forming a contact holder having a predetermined thickness on the sacrificial layer;
(c) forming a plurality of contact structures on the contact holder;
(d) removing the sacrificial layer to separate the coupling structure composed of the contact holder and the contact structure from the growth substrate;
(e) injecting a liquid insulating material between the contact structures so that the insulating material surrounds the contact structures;
(f) curing the insulating material; And
(g) separating the contact holder from the contact structure. The method according to claim 1,
The step (b)
(b-1) forming a first photoresist layer on the sacrificial layer;
(b-2) arranging a first photomask on the first photoresist layer;
(b-3) exposing the first photoresist layer;
(b-4) developing the first photoresist layer to form a first removal region where at least a portion of the first photoresist layer is removed;
(b-5) forming a first plating layer for forming the contact holder by plating an electrically conductive material on the first removal region;
(b-6) planarizing the first plating layer; Wherein the contact portion is formed of a conductive material. The method of claim 2,
The step (c)
(c-1) forming a second photoresist layer on the contact holder;
(c-2) arranging a second photomask on the second photoresist layer;
(c-3) exposing the second photoresist layer;
(c-4) developing the second photoresist layer to form a second removal region in which at least a portion of the contact holder is exposed upwardly; And
(c-5) forming a second plating layer that forms the contact structure by plating an electro-conductive material on the second removal region;
Wherein the contact portion is formed of a conductive material. The method of claim 3,
Wherein the first photoresist layer and the second photoresist layer have a thickness
A positive photoresist, or a negative photoresist. The method of claim 3,
A plurality of the second removal regions are formed on one of the contact holders,
Wherein a plurality of contact structures are attached to one of the contact holders. The method of claim 3,
Wherein the second removal region has a curved shape and a plurality of the second removal regions are arranged in parallel with each other. The method of claim 3,
The step (d)
(d-1) removing the first photoresist layer and the second photoresist layer; And
(d-2) etching the sacrificial layer. The method according to claim 1,
The step (a)
(a-1) depositing a conductive layer on the growth substrate; And
(a-2) plating the sacrificial layer on the conductive layer. The method according to claim 1,
The step (e)
(e-1) receiving the coupling structure in the chamber; And
(e-2) injecting a liquid insulating material into the chamber. The method of claim 9,
The chamber may comprise:
A chamber space in which the coupling structure can be received, and a plurality of holder holders provided in the chamber space and to which the contact holder can be fixed. The method according to claim 1,
After the step (g)
(h) injecting a liquid insulating material into the place where the contact holder is detached; Further comprising the steps of: 12. A contact device produced by any one of claims 1 to 11.

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