KR20180121369A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20180121369A
KR20180121369A KR1020180045454A KR20180045454A KR20180121369A KR 20180121369 A KR20180121369 A KR 20180121369A KR 1020180045454 A KR1020180045454 A KR 1020180045454A KR 20180045454 A KR20180045454 A KR 20180045454A KR 20180121369 A KR20180121369 A KR 20180121369A
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KR
South Korea
Prior art keywords
layer
semiconductor substrate
semiconductor
type
buried layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020180045454A
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English (en)
Korean (ko)
Inventor
요헤이 오가와
다카아키 히오카
Original Assignee
에이블릭 가부시키가이샤
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Publication of KR20180121369A publication Critical patent/KR20180121369A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H01L43/065—
    • H01L43/04—
    • H01L43/14—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
KR1020180045454A 2017-04-28 2018-04-19 반도체 장치 Withdrawn KR20180121369A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-090394 2017-04-28
JP2017090394A JP2018190793A (ja) 2017-04-28 2017-04-28 半導体装置

Publications (1)

Publication Number Publication Date
KR20180121369A true KR20180121369A (ko) 2018-11-07

Family

ID=63916183

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180045454A Withdrawn KR20180121369A (ko) 2017-04-28 2018-04-19 반도체 장치

Country Status (5)

Country Link
US (1) US20180315919A1 (cg-RX-API-DMAC10.html)
JP (1) JP2018190793A (cg-RX-API-DMAC10.html)
KR (1) KR20180121369A (cg-RX-API-DMAC10.html)
CN (1) CN108807659A (cg-RX-API-DMAC10.html)
TW (1) TW201840023A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10333056B2 (en) * 2017-07-27 2019-06-25 Globalfoundries Singapore Pte. Ltd. Hall element for 3-D sensing and method for producing the same
JP7266386B2 (ja) * 2018-11-09 2023-04-28 エイブリック株式会社 半導体装置
CN116113309B (zh) * 2023-04-13 2023-07-25 南京邮电大学 一种采用双保护环的低失调霍尔器件及其使用方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JP2005333103A (ja) * 2004-03-30 2005-12-02 Denso Corp 縦型ホール素子およびその製造方法
EP1850143A1 (en) * 2005-02-08 2007-10-31 Rohm Co., Ltd. Magnetic sensor circuit and portable terminal provided with such magnetic sensor circuit
JP4940965B2 (ja) * 2007-01-29 2012-05-30 株式会社デンソー 回転センサ及び回転センサ装置
EP2234185B1 (en) * 2009-03-24 2012-10-10 austriamicrosystems AG Vertical Hall sensor and method of producing a vertical Hall sensor
JP5815986B2 (ja) * 2010-07-05 2015-11-17 セイコーインスツル株式会社 ホールセンサ
US9217783B2 (en) * 2012-09-13 2015-12-22 Infineon Technologies Ag Hall effect device
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
JP2016152271A (ja) * 2015-02-16 2016-08-22 エスアイアイ・セミコンダクタ株式会社 縦型ホール素子の製造方法
DE102015204637A1 (de) * 2015-03-13 2016-09-15 Infineon Technologies Ag Verfahren zum Dotieren eines aktiven Hall-Effekt-Gebiets einer Hall-Effekt-Vorrichtung und Hall-Effekt-Vorrichtung mit einem dotierten aktiven Hall-Effekt-Gebiet
US10109787B2 (en) * 2016-10-27 2018-10-23 Texas Instruments Incorporated Well-based vertical hall element with enhanced magnetic sensitivity

Also Published As

Publication number Publication date
JP2018190793A (ja) 2018-11-29
TW201840023A (zh) 2018-11-01
US20180315919A1 (en) 2018-11-01
CN108807659A (zh) 2018-11-13

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20180419

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination