KR20180102424A - Display device using semiconductor light emitting device and method for manufacturing - Google Patents

Abstract

The present invention relates to a display device and, more specifically, to a display device using a semiconductor light emitting element and a manufacturing method thereof. The display device according to the present invention comprises a semiconductor light emitting element having first and second conductive electrodes; a substrate having a receiving hole for receiving the semiconductor light emitting element and a driving thin film transistor of the semiconductor light emitting element; an electrode pattern connected to the first and second conductive electrodes and extending to the driving thin film transistor; and an adhesive layer for attaching the semiconductor light emitting element to the bottom surface of the receiving hole. The adhesive layer has a material cured by ultraviolet (UV) rays, is disposed on one surface of the semiconductor light emitting element, and is formed in a size equal to or smaller than that of one surface of the semiconductor light emitting element.

Description

TECHNICAL FIELD [0001] The present invention relates to a display device using a semiconductor light emitting device and a method of manufacturing the same,

The present invention relates to a display device and a method of manufacturing the same, and more particularly to a display device using a semiconductor light emitting device.

Recently, display devices having excellent characteristics such as a thin film type and a flexible type in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of an LCD, there is a problem that the reaction time is not fast and the implementation of the flexible is difficult. In the case of the AMOLED, there is a weak point that the life span is short and the mass production yield is not good.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a display using the semiconductor light emitting device can be presented.

Therefore, in recent years, research and development on a display device using a micro semiconductor light emitting device is under way, and such a display device has attracted attention as a next generation display because of its high image quality and high reliability. However, since such a display device uses a micro light emitting device, there is a problem that the transfer process is difficult. In particular, when transferring a micro light emitting element using a donor substrate, it is difficult to apply the adhesive only to the light emitting element. Accordingly, the present invention proposes a new display device based on a micro light emitting device having a size of several to several tens of micrometers, and capable of controlling an adhesive material for attaching a light emitting device.

It is an object of the present invention to provide a structure in which a wiring process for connecting a light emitting device to a circuit in a display device using a semiconductor light emitting device is easy and an adhesive material for attaching the light emitting device can be controlled.

It is another object of the present invention to provide a display device having a new manufacturing process and structure capable of selectively forming an adhesive layer selectively only on a light emitting element in a donor substrate.

The display device according to the present invention uses a patterned mask on the donor substrate to transfer the UV curable adhesive to the wiring substrate while keeping the adhesive property without curing the UV curable adhesive only on the light emitting element. Through this, an adhesive layer is formed only on the light emitting element, and is formed to have the same or smaller size as one surface of the semiconductor light emitting element.

As a specific example, the display device may include a semiconductor light emitting element having a first conductive type electrode and a second conductive type electrode, a receiving hole in which the semiconductor light emitting element is accommodated, and a driving thin film transistor of the semiconductor light emitting element An electrode pattern connected to the first conductive type electrode and the second conductive type electrode and extending to the driving thin film transistor and an adhesive layer attaching the semiconductor light emitting element to the bottom of the receiving hole, The semiconductor light emitting device includes a material that is cured by ultraviolet (UV) light, is disposed on one surface of the semiconductor light emitting device, and is formed to have the same or smaller size as one surface of the semiconductor light emitting device.

In an embodiment, the adhesive layer is formed in a smaller area than the bottom of the receiving hole, and the bottom of the receiving hole may have a portion not covered by the adhesive layer. The adhesive layer may be formed in a region where the bottom of the semiconductor light emitting element and the bottom of the receiving hole overlap.

In an embodiment, the adhesive layer may be in a state not cured by ultraviolet irradiation.

One surface of the semiconductor light emitting device may be a lower surface of the n-type semiconductor layer.

The semiconductor light emitting device may include a polymer layer surrounding the conductive semiconductor layer of the semiconductor light emitting device, and one surface of the semiconductor light emitting device may be a lower surface of the polymer layer.

In one embodiment of the present invention, a filler for filling the receiving hole is coated on one surface of the substrate to form a planarization layer, and the electrode pattern is connected to the first conductive type electrode and through the first hole of the planarization layer, A pixel electrode pattern extending to the driving thin film transistor and a common electrode pattern connected to the second conductive electrode and extending to the driving thin film transistor through the second hole of the planarization layer.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: growing and etching a semiconductor layer on a growth substrate to form a plurality of semiconductor light emitting elements on the growth substrate; patterning the mask at predetermined intervals on one surface of the donor substrate; Forming a pressure sensitive adhesive layer on one side of the donor substrate to form a pressure sensitive adhesive layer; and transferring at least one of the plurality of semiconductor light emitting elements to the pressure sensitive adhesive layer so as to overlap with the mask, A step of applying an adhesive having a material to the donor substrate; irradiating the ultraviolet light to cure a portion of the applied adhesive located in the adhesive layer; A step of attaching the transferred semiconductor light emitting element to the wiring board using a portion disposed on the wiring board, It proposes a method of manufacturing the display apparatus.

In an embodiment, the donor substrate is made of a material through which the ultraviolet rays are transmitted. The ultraviolet rays are irradiated on the opposite side of the adhesive layer with respect to the donor substrate, and the applied adhesive is not cured at a portion overlapping the mask. The mask may be formed of a metal material.

In an embodiment, the wiring board may have a receiving hole, and the semiconductor light emitting device transferred to the adhesive layer of the donor substrate may be attached to the receiving hole by an uncured portion of the adhesive.

In the display device according to the present invention, by using a patterned mask on the donor substrate, the UV curable adhesive is not cured only on the light emitting element, and the adhesive property is maintained and transferred onto the wiring substrate. Can be applied.

Even if an adhesive is applied to a portion in contact with the wiring substrate in a cup (CIC, Chip in Cup) in which a semiconductor light emitting element is housed in a cup-shaped receiving hole, The degree of freedom of the application of the adhesive can be improved.

Further, since the control of the adhesive of the semiconductor light emitting device is easy, it becomes possible to sequentially transfer the donor substrate to the wiring substrate for each pixel type such as red, green, and blue.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10 is a partial perspective view for explaining another embodiment of the present invention.
11 is a circuit diagram for explaining the configuration of the pixel shown in Fig.
12 is a cross-sectional view taken along the line EE of Fig.
FIGS. 13A to 13C and FIGS. 14A to 14G are conceptual diagrams showing a manufacturing method of the display device of FIG.
15 is a cross-sectional view showing still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view showing a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the above-described display using the semiconductor light emitting device of the present invention, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring substrate using an anisotropic conductive film (ACF). However, such a method has a disadvantage in that it is difficult to secure reliability because of a difficult manufacturing transfer process, and a manufacturing cost is high. In particular, in the case of digital signage, since the property of flexible is not required, a different approach is required for a display using a semiconductor light emitting element.

In this case, in order to overcome the difficult technical difficulties of the transfer process and to realize a high-resolution display based on a micro-light emitting diode of a very small size, a very small blue LED-based display pixel Structure.

More particularly, the present invention discloses a structure in which an uncured UV curable adhesive is applied to a light emitting device and transferred to a wiring board through the UV curable adhesive. Through this, an adhesive layer is disposed only on the light emitting element, and the adhesive layer is formed to have the same or smaller size as one surface of the semiconductor light emitting element.

Hereinafter, a display device according to another embodiment of the present invention which overcomes a difficult technical difficulty of transferring will be described in detail with reference to the drawings.

FIG. 10 is a partial perspective view for explaining another embodiment of the present invention, FIG. 11 is a circuit diagram for explaining the configuration of the pixel shown in FIG. 10, and FIG. 12 is a sectional view taken along the line E-E in FIG.

10, 11, and 12, a display device 1000 using an active matrix (AM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to a passive matrix (PM) semiconductor light emitting device.

As shown in the figure, a display device 1000 using an active matrix semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device is illustrated.

The display device 1000 includes a substrate 1010 and a plurality of semiconductor light emitting devices 1050.

The substrate 1010 is a thin film transistor array substrate, and may be made of glass or a plastic material.

The substrate may include a display area and a non-display area. In this case, the display region may be defined as a region except for the edge portion of the substrate 1010, and an area where a pixel array for displaying an image is disposed. The non-display region may be defined as an edge portion of the substrate 1010 surrounding the display region, the non-display region being provided on the substrate 1010 except for the display region.

The substrate 1010 includes a plurality of gate lines GL, a plurality of data lines DL, a plurality of driving power supply lines PL, a plurality of common power supply lines CL and a plurality of pixels SP can do.

Each of the plurality of gate lines GL is provided on the substrate 1010 and extends along one direction of the substrate 1010 and is spaced apart from the other direction crossing the one direction. The plurality of data lines DL are provided on the substrate 1010 so as to intersect the plurality of gate lines GL and extend along the other direction and are spaced apart at regular intervals along the one direction.

The plurality of driving power supply lines PL may be disposed in parallel with each of the plurality of data lines DL and may be formed with each of the plurality of data lines DL. Each of the plurality of driving power supply lines PL supplies the pixel driving power supplied from the outside to the adjacent pixels SP.

The plurality of common power supply lines CL are provided on the substrate 1010 so as to be parallel to each of the plurality of gate lines GL and may be formed together with each of the plurality of gate lines GL. Each of the plurality of common power supply lines CL supplies a common power supplied from the outside to an adjacent pixel SP.

Each of the plurality of pixels SP is provided in a pixel region defined by a gate line GL and a data line DL. Each of the plurality of pixels SP may be defined as a sub-pixel, which is a minimum unit area in which actual light is emitted. The sub-pixel includes a single semiconductor light emitting element as a minimum unit region in which actual light is emitted. At least three adjacent pixels may constitute one unit pixel for color display. For example, one unit pixel includes adjacent red pixels, green pixels, and blue pixels, and may further include white pixels for improving brightness.

The semiconductor light emitting device may have the structure described above with reference to FIG. 4, and may include a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue semiconductor light emitting device, which are respectively disposed in red pixels, green pixels, .

As another example, the plurality of semiconductor light emitting devices 1050 may be a high output light emitting device in which indium (In) and / or aluminum (Al) are added together and gallium nitride Can be implemented. For example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers such as n-Gan, p-Gan, AlGaN, and InGan. As another example, the plurality of semiconductor light emitting devices may be implemented as a light emitting device that emits green light, or may include a blue semiconductor light emitting device and a green semiconductor light emitting device.

In addition, the semiconductor light emitting device may be a micro light emitting diode chip. Here, the micro-LED chip may have a cross-sectional area smaller than that of the light emitting region in the sub-pixel, and may have a scale of 1 to 100 micrometers, for example.

More specifically, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device each include a first conductive type semiconductor layer 1155 (first conductive type semiconductor layer) in which a first conductive type electrode 1156 and a first conductive type electrode 1156 are formed ), The active layer 1154 formed on the first conductivity type semiconductor layer 1155, the second conductivity type semiconductor layer 1153 formed on the active layer 1154, and the second conductivity type semiconductor layer 1153, And a second conductive electrode 1152 spaced horizontally from the electrode 1156. In this case, the second conductive type electrode is disposed on one surface of the second conductive type semiconductor layer 1153, and an undoped semiconductor layer is formed on the other surface of the second conductive type semiconductor layer 1153 .

The first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively. The second conductive type electrode 1152 and the second conductive type The semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

According to another embodiment of the present invention, the first conductivity type and the second conductivity type semiconductor layer can be formed by implanting impurities into the intrinsic or the doped semiconductor substrate. In addition, the region where the p-n junction is formed by the impurity implantation may serve as the active layer. The description of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer and the active layer, which will be described below, is merely exemplary and the present invention is not limited thereto.

Referring to these drawings, a receiving hole 1061 for receiving the semiconductor light emitting device may be formed on one surface of the substrate 1010. The receiving hole 1061 may be formed by a planarization layer 1060 formed to cover the substrate 1010. However, the present invention is not necessarily limited thereto, and the receiving hole may be formed in the body of the substrate.

For example, the planarization layer 1060 functions as a protective film covering the substrate and covers the wiring electrodes to form a plane, and is made of an insulating material. As an example, the planarization layer 1060 may include a photoresist, an optical polymer material, and other industrial plastic materials.

According to the illustration, the receiving hole 1061 may be provided in each of the plurality of pixels. The receiving hole 1061 is provided in a light emitting region defined in a sub-pixel, and houses the semiconductor light emitting device 1050. Each of the plurality of semiconductor light emitting devices 1050 is connected to the pixel circuit PC of the corresponding pixel SP to be proportional to the current flowing from the pixel circuit PC, that is, the driving thin film transistor T2 to the common power supply line CL. The light is emitted.

In this case, the planarization layer 1060 is formed so as to cover the driving TFT T2, and the reception hole 1061 is recessed from the planarization layer 1060. The receiving hole 1061 is recessed from the upper surface of the planarization layer 1060 toward the substrate. For example, the receiving hole 1061 may have a cup shape that is wider than the semiconductor light emitting device 1050. At this time, the receiving hole 1061 may be recessed in the planarization layer 1060 so as to have a depth larger than the thickness (or total height) of the semiconductor light emitting device 1050.

The first conductive type electrode of the plurality of semiconductor light emitting devices 1050 is connected to the source electrode of the driving thin film transistor T2 through the first contact hole CH1, And is connected to the common power supply line CL through the hole CH2.

In this example, the semiconductor light emitting element 1050 is housed in the housing hole 1061 recessed in the light emitting region of the pixel, and the electrodes of the semiconductor light emitting element 1050 are connected to the pixel circuit 1001 through the contact holes CH1 and CH2. The connection process of the semiconductor light emitting device 1050 can be simplified.

The driving thin film transistor T2 includes a gate electrode GE, a semiconductor layer SCL, an ohmic contact layer OCL, a source electrode SE, and a drain electrode DE.

The gate electrode GE is formed on the substrate 2010 together with the gate line GL. The gate electrode GE is covered by the gate insulating layer 1112.

The gate insulating layer 1112 may be formed of a single layer or a plurality of layers made of an inorganic material, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The semiconductor layer SCL is provided in the form of a predetermined pattern (or island) on the gate insulating layer 2112 so as to overlap with the gate electrode GE. The semiconductor layer SCL may be formed of a semiconductor material composed of any one of amorphous silicon, polycrystalline silicon, oxide, and organic material, but is not limited thereto.

The ohmic contact layer OCL is provided on the semiconductor layer SCL in a predetermined pattern or island shape. Here, the ohmic contact layer PCL is for ohmic contact between the semiconductor layer SCL and the source / drain electrodes SE, DE and can be omitted.

The source electrode SE is formed on the other side of the ohmic contact layer OCL so as to overlap with one side of the semiconductor layer SCL. The source electrode SE is formed together with a data line (not shown) and is branched or protruded from an adjacent data line.

The drain electrode DE is formed on the other side of the ohmic contact layer OCL so as to be spaced apart from the source electrode SE while overlapping with the other side of the semiconductor layer SCL. The drain electrode DE is formed with a data line and a source electrode SE.

An interlayer insulating layer 1114 is formed on the upper surface of the substrate 1010 so as to cover the pixel circuit including the driving thin film transistor T2. The interlayer insulating layer 1114 may be formed of an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), or an organic material such as benzocyclobutene or photo acryl.

The planarization layer 1060 is formed on the upper surface of the substrate 1010 so as to cover the interlayer insulating layer 1114. This planarization layer 1060 protects the pixel circuit including the driving thin film transistor T2 while providing a flat surface on the interlayer insulating layer 1114. [ The planarization layer 1060 according to one example may be formed of an organic material such as benzocyclobutene or photo acryl.

Further, the receiving hole 2061 may be formed by removing both the gate insulating film 1112, the interlayer insulating layer 1114, and the planarization layer 1060, which overlap the light emitting region of the sub-pixel. The receiving hole 1061 may have a cup shape that is wider than the semiconductor light emitting element 1050.

In this case, the planarization layer 1060 may further include a charging portion 1063 that charges the periphery of the semiconductor light emitting device 1050 disposed in the accommodation hole 1061. [ For example, the planarization layer 1060 may be formed in a multi-layer structure, and may include a base portion 1062 to be stacked on a substrate, and a charging portion 1063 to be stacked on the base portion 1062 while filling the accommodation hole. have. The charging unit may be implemented by applying a filler to fill the receiving hole. Also, the base portion 1062 and the charging portion 1063 may be made of the same material.

The charging part 1063 is filled in the peripheral space of the accommodation hole 1061 to which the semiconductor light emitting element 1050 is attached. The charging part 1063 is filled with a filler in the peripheral space of the accommodation hole 1061 and is then hardened to flatten the upper surface of the peripheral space of the accommodation hole 1061 while removing the air gap in the accommodation hole 1061. In addition, the charger 1063 may serve as a passivation layer of the semiconductor light emitting device while supporting the pixel electrode pattern AE and the common electrode pattern CE, which will be described later.

At this time, the first conductive type electrode 1156 and the second conductive type electrode 1152 of the semiconductor light emitting element 1050 are separated from the bottom of the receiving hole 1061. The first conductive electrode 1156 is connected to the source electrode SE of the driving thin film transistor T2 and the second conductive electrode 1152 is connected to the common power line CL. The first conductive type electrode 1156 and the second conductive type electrode 1152 may be formed to be light transmissive in order to emit light of the semiconductor light emitting element upward.

Each of the plurality of sub-pixels is connected to the first conductive type electrode 1156 and the second conductive type electrode 1152 through the planarization layer 1060, .

More specifically, the electrode pattern may include a pixel electrode pattern (AE) and a common electrode pattern (CE).

The pixel electrode pattern AE electrically connects the source electrode SE of the driving TFT T2 to the first conductive electrode 1156 of the semiconductor light emitting device 1050. [ The pixel electrode pattern AE according to an example is extended to the driving TFT T2 through the first contact hole CH1 provided in the planarization layer 1060 and connected to the source electrode SE, The first conductive type electrode 1156 of the first conductivity type.

The common electrode pattern CE electrically connects the common power supply line CL to the second conductive type electrode 1152 of the semiconductor light emitting device 1050. The pixel electrode pattern AE according to an exemplary embodiment is extended to the thin film transistor T2 through the second contact hole CH2 provided in the planarization layer 1060 and connected to the common power line CL, The second conductive type electrode 1152 of the second conductivity type.

Each of the pixel electrode pattern AE and the common electrode pattern CE may be formed of a transparent conductive material. The transparent conductive material may be made of a material such as indium tin oxide (ITO) or indium zinc oxide (IZO). As another example, the electrode pattern may be made of TiO ₂ , AZO, ZnO, ITO, GZO, IZO, or an oxide layer composed of two or more layers. As another example, the electrode pattern may be formed of a Pedot: PSS series conductive material or Graphene.

In this example, the substrate 1010 includes an adhesive layer 1120 that fixes the semiconductor light emitting element 1050 to the receiving hole 1061. The adhesive layer 1120 has a material which adheres the semiconductor light emitting device 1050 to the bottom of the receiving hole and is cured by ultraviolet (UV). However, the present invention is not limited thereto, and the adhesive layer may be formed to attach the semiconductor light emitting device 1050 to one surface of the wiring substrate. In this case, the wiring board can be configured without the receiving hole.

Meanwhile, in the present invention, the adhesive layer 1120 may be provided without being cured by ultraviolet irradiation. For example, even if ultraviolet rays are irradiated during the manufacturing process, the adhesive layer 1120 may not be exposed to ultraviolet rays and may not be cured. Therefore, the adhesive layer 1120 may be cured by heat or naturally cured at room temperature.

Further, the adhesive layer 1120 is disposed on one surface of the semiconductor light emitting device, and is formed to have the same or smaller size as one surface of the semiconductor light emitting device. For example, the adhesive layer 1120 may be formed by an adhesive applied to one surface of the second conductive type semiconductor layer 1153. [ In this case, one surface of the second conductive type semiconductor layer 1153 on which the adhesive is coated may be the lower surface of the second conductive type semiconductor layer 1153. Thus, in this example, one surface of the semiconductor light emitting device can be the bottom surface of the n-type semiconductor layer. However, when an undoped semiconductor layer is formed on the other surface of the second conductivity type semiconductor layer, one surface of the semiconductor light emitting device may be a lower surface of the undoped semiconductor layer.

In general, it is very difficult for the adhesive to be applied only to the lower surface of the second conductive type semiconductor layer 1153. More specifically, in the case where the semiconductor light emitting element is on the donor substrate, it is a difficult process to selectively apply the adhesive only to the lower surface of the second conductivity type semiconductor layer 1153. Since the adhesive layer is formed of a material that is cured by ultraviolet rays, an adhesive is applied not only to the lower surface of the second conductive type semiconductor layer 1153 but also to the entire donor substrate, and the lower surface of the second conductive type semiconductor layer 1153 It is possible to apply a method of not curing by masking only. A manufacturing process related to this will be described later, and a structure enabling the manufacturing process described later by this example is implemented.

The adhesive layer 1120 is interposed between the semiconductor light emitting device 1050 and the bottom surface of the receiving hole 1061 to attach the semiconductor light emitting device 1050 to the bottom surface of the receiving hole 1061. In this case, the bottom surface of the receiving hole 1061 may be formed in the planarization layer or may be formed in the substrate. The adhesive layer 1120 may be formed of a light transmitting material so that light reflected from the lower side of the semiconductor light emitting device can be transmitted upward.

The adhesive layer 1120 is formed to have a smaller area than the bottom of the receiving hole 1061 and the bottom of the receiving hole 1061 may have a portion not covered by the adhesive layer 1120. For example, the bottom of the receiving hole 1061 is divided into a first portion 1064 covered with the adhesive layer 1120 and a second portion 1065 covered with the filler without covering the adhesive layer 1120 Can be partitioned. In this case, the adhesive layer 1120 is disposed in a region where the bottom of the receiving hole 1061 overlaps with the semiconductor light emitting element, thereby forming the first portion 1064.

In addition, in the display device according to the present exemplary embodiment, an encapsulation layer 1080 covering an upper surface of the substrate 1010 may be provided.

The sealing layer 1080 is coated on the upper surface of the substrate 1010 so as to cover the pixel SP and the light emitting element 1050 to protect the pixel SP and the light emitting element 1050 provided in the substrate 1010 . The sealing layer 1080 may be formed of a heat and / or photo-curing resin, coated on the upper surface of the substrate 1010 in a liquid state, and then cured by a curing process using heat and / or light.

Meanwhile, the sealing layer 1080 may be replaced with a phosphor layer, and this structure will be described in more detail in the structure described later.

According to the illustration, the black matrix BM and the color filter layer CF may be disposed on the sealing layer 1080.

The black matrix BM defines an aperture region overlapping a light emitting region of each pixel SP provided on the substrate 1010. [ That is, the black matrix BM is provided in the remaining region except for the opening region overlapping the light emitting region of each pixel SP, thereby preventing color mixture between adjacent opening regions.

A color filter layer CF may be disposed in the opening region. In addition, the color filter layer CF may be disposed in the opening region to improve color purity of output light. As another example, the color filter layer CF may be replaced by a light extracting layer. The light extracting layer is made of a transparent material and serves to extract light emitted from the light emitting device 1050 to the outside. The opposite surface of the light extraction layer facing the light emitting element 1050 may have a lens shape for increasing the linearity of the light emitted from the light emitting element 1050.

According to the display device of the present invention as described above, an adhesive is applied to the entire donor substrate as the UV curable adhesive is not cured but transferred to the wiring substrate while maintaining the adhesive property. However, . ≪ / RTI > This makes it possible to form an adhesive layer only on the semiconductor light emitting element.

Meanwhile, the display device can be manufactured by a new method. Hereinafter, a manufacturing method applied to the present invention will be described with reference to the drawings.

FIGS. 13A to 13C and FIGS. 14A to 14G are conceptual diagrams showing a manufacturing method of the display device of FIG.

First, according to the manufacturing method, an n-type semiconductor layer 1153, an active layer 1154, and a p-type semiconductor layer 1155 are grown on a growth substrate 1090 (FIG. 13A).

the active layer 1154 is grown on the n-type semiconductor layer 1153 and then the p-type semiconductor layer 1155 is grown on the active layer 1154 . When the n-type semiconductor layer 1153, the active layer 1154 and the p-type semiconductor layer 1155 are sequentially grown in this way, a stacked structure of the micro semiconductor light emitting devices is formed as shown in the figure.

The growth substrate 1090 (wafer) may be formed of any material having optical transparency, for example, sapphire (Al 2 O 3), GaN, ZnO, or AlO, but is not limited thereto. Further, the growth substrate 1090 may be formed of a carrier wafer, which is a material suitable for semiconductor material growth. And may include a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate, or at least one of Si, GaAs, GaP, InP and Ga2O3 Can be used.

A semiconductor layer grown on the growth substrate is etched to form a plurality of semiconductor light emitting devices on the growth substrate (FIG. 13B).

In this case, the active layer 1154 and the p-type semiconductor layer 1155 are partially removed in the vertical direction, and the n-type semiconductor layer 1153 is exposed to the outside. Through this, the mesa process is performed. Thereafter, isolation is performed by etching the n-type semiconductor layer 1153 so that a plurality of light emitting elements form a light emitting element array. Thus, the p-type semiconductor layer 1155, the active layer 2154, and the n-type semiconductor layer 1153 are etched to form a plurality of micro semiconductor light emitting elements.

Next, an n-type electrode 1152 having a height difference in the thickness direction is formed on the n-type semiconductor layer 1153 and the p-type semiconductor layer 1155 so that a flip chip type light emitting device is realized. and a p-type electrode 1156 are respectively formed (Fig. 13C).

The n-type electrode 1152 and the p-type electrode 1156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto. At this time, the n-type electrode 1152 may be the second conductive type electrode, and the p-type electrode 1156 may be the first conductive type electrode.

Next, a mask is patterned on a donor plate at predetermined intervals (FIG. 14A), and an adhesive material is applied to one surface of the donor substrate to cover the mask to form an adhesive layer (FIG. 14B).

The donor substrate 1091 is made of a material through which ultraviolet rays are transmitted. For example, the donor substrate 1091 includes a body made of a light transmitting material such as glass or transparent resin. The mask 1092 may be patterned at predetermined intervals on one side of the body.

The mask 1092 may be formed of a material that blocks ultraviolet rays, for example, a metal material, and may be disposed at an interval corresponding to the interval between the receiving holes on the wiring board, which will be described later. The adhesive layer 1093 is applied on one side of the body to a thickness covering the mask 1092, and has adhesiveness in the form of resin or film.

As another example, a structure in which an adhesive layer is formed on one side of the body and a mask is formed on the other side is also possible. As another example, an adhesive layer may be formed on one surface of the body, and the mask may be separately provided without being coupled to the donor substrate.

Next, at least one of the plurality of semiconductor light emitting devices is transferred to the adhesive layer to overlap the mask (FIG. 14C), and an adhesive having an ultraviolet (UV) curable material is applied to the donor substrate 14d).

In this case, an adhesive (PA) is applied to the entire surface of the donor substrate 1091 as well as one surface of the second conductive type semiconductor layer 1153). Therefore, the adhesive PA is coated on one surface of the adhesive layer 1093 and one surface of the second conductive type semiconductor layer 1153. [ Here, one surface of the second conductive type semiconductor layer 1153 on which the adhesive PA is coated may be the lower surface of the second conductive type semiconductor layer 1153.

Next, the ultraviolet ray is irradiated to cure the portion of the applied adhesive located in the adhesive layer (Fig. 14E).

The ultraviolet ray is irradiated from the opposite side of the adhesive layer 1093 with respect to the donor substrate 1091 and the applied adhesive PA is not cured at a portion overlapping with the mask 1092. [ That is, the ultraviolet light is irradiated from the lower side to the upper side, so that the adhesive PA on one surface of the second conductive type semiconductor layer 1153 covered by the metal mask 1092 is not cured, The adhesive (PA) on one side can be cured.

Next, the step of attaching the transferred semiconductor light emitting device to the wiring substrate 1010 is performed using a portion of the applied adhesive disposed on one side of the transferred semiconductor light emitting device.

The semiconductor light emitting element is transferred from the donor substrate 1091 to the wiring substrate 1010 as shown in Fig. In this case, a receiving hole 1061 is formed in the wiring board 1010, and the semiconductor light emitting element transferred to the adhesive layer 1093 of the donor substrate 1091 is electrically connected to the receiving And is attached to the hole 1061.

Finally, as shown in Fig. 14G, the receiving hole 1061 of the wiring board is filled with a filler, and the wiring pattern is wired to the driving thin film transistor using the electrode patterns AE and CE. Charging part 1063 can be formed by filling filler. 14F and 14G, a wiring board having the above-described structure with reference to Figs. 10 to 12 can be used for the wiring board structure.

On the other hand, the above-described manufacturing method of the display device is also applicable to the modified example of the display device. Modifications of the display device will now be described with reference to the drawings.

15 is a cross-sectional view showing still another embodiment of the present invention.

In the example of Fig. 15, the same reference numerals are assigned to the same components as those of the example described above with reference to Figs. 10 to 12, and the description thereof is replaced with the first explanation. Specifically, the remaining configuration except for the semiconductor light emitting element is the same as the configuration of the example described in Figs. 10 to 12. Fig.

More specifically, the semiconductor light emitting element includes a first conductive type semiconductor layer 2155 on which a first conductive type electrode 2156, a first conductive type electrode 2156 are formed, and a second conductive type semiconductor layer 2155 on the first conductive type semiconductor layer 2155 The second conductive type semiconductor layer 2153 formed on the active layer 2154 and the second conductive type semiconductor layer 2153 on the second conductive type semiconductor layer 2153, And includes a conductive electrode 2152. In this case, the second conductive type electrode is disposed on one surface of the second conductive type semiconductor layer 2153, and an undoped semiconductor layer is formed on the other surface of the second conductive type semiconductor layer 2153 .

The first conductive type electrode 2156 and the first conductive type semiconductor layer 2155 may be a p-type electrode and a p-type semiconductor layer, respectively. The second conductive type electrode 2152 and the second conductive type The semiconductor layer 2153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

At this time, the semiconductor light emitting device includes a passivation layer 2160 formed to surround the sides of the first conductivity type semiconductor layer 2155 and the second conductivity type semiconductor layer 2153.

The passivation layer 2160 is formed of an insulating material to cover the side surface of the semiconductor light emitting device to stabilize the characteristics of the semiconductor light emitting device. Since the gap between the first conductivity type semiconductor layer 2155 and the second conductivity type semiconductor layer 2153 is electrically disconnected by the passivation layer 2160, the P-type GaN and the N -type GaN can be insulated from each other.

According to the illustrated embodiment, the semiconductor light emitting device includes a polymer layer 2170 surrounding the conductive semiconductor layer of the semiconductor light emitting device.

For example, the polymer layer 2170 may be a molded polymer, such as SU-8 or PR. Also, the polymer layer 2170 may be formed of a light transmissive material, and in this case, the polymer layer 2170 may have a transmittance of 80% or more in a wavelength region in a visible light.

The polymer layer 2170 may be formed so as to cover the entire surface except the upper surface of the semiconductor light emitting device.

Also, in this example, at least one of the passivation layer 2160 or the polymer layer 2170 may include a reflective material. Side light emission of the semiconductor light emitting device may be directed upward in the passivation layer 2160 or the polymer layer 2170 through the reflective material. In this case, the reflective material may be reflective particles such as titanium oxide, alumina, magnesium oxide, antimony oxide, zirconium oxide or silica. On the other hand, the reflective particles may be a white pigment.

In this example, the adhesive layer 2120 is made of a material that adheres the semiconductor light emitting device 2050 to the bottom of the receiving hole 2061 and is cured by ultraviolet (UV). However, the adhesive layer 2120 may be provided without being cured by ultraviolet irradiation. For example, even when ultraviolet rays are irradiated during the manufacturing process, the adhesive layer 2120 may not be exposed to ultraviolet rays and may be in a non-cured state. Therefore, the adhesive layer 2120 may be cured by heat or naturally cured at room temperature.

Further, the adhesive layer 2120 is disposed on one surface of the semiconductor light emitting device, and is formed to have the same or smaller size as one surface of the semiconductor light emitting device. For example, the adhesive layer 2120 may be formed by an adhesive applied to the lower surface of the polymer layer 2170. Thus, in this example, the lower surface of the semiconductor light emitting element can be the lower surface of the polymer layer 2170.

Also in this example, as the adhesive property is maintained without being cured, the adhesive is applied to the entire donor substrate as it is transferred to the wiring substrate, so that the adhesive property can be selectively maintained only for the semiconductor light emitting element. This makes it possible to form an adhesive layer only on the semiconductor light emitting element.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (12)

A semiconductor light emitting element having a first conductive type electrode and a second conductive type electrode;
A substrate having a housing hole in which the semiconductor light emitting device is housed, and a driving thin film transistor of the semiconductor light emitting device;
An electrode pattern connected to the first conductive type electrode and the second conductive type electrode and extending to the driving thin film transistor; And
And an adhesive layer for attaching the semiconductor light emitting element to the bottom of the receiving hole,
Wherein the adhesive layer has a material that is cured by ultraviolet (UV) light, and is disposed on one surface of the semiconductor light emitting device, and is formed to have the same or smaller size as one surface of the semiconductor light emitting device. The method according to claim 1,
Wherein the adhesive layer is formed in a smaller area than the bottom of the receiving hole, and the bottom of the receiving hole has a portion not covered by the adhesive layer. 3. The method of claim 2,
Wherein the adhesive layer is formed in a region where the bottom of the semiconductor light emitting element and the bottom of the receiving hole overlap with each other. The method according to claim 1,
Wherein the adhesive layer is in a state of being not cured by ultraviolet irradiation. The method according to claim 1,
Wherein one surface of the semiconductor light emitting device is a lower surface of the n-type semiconductor layer. The method according to claim 1,
Wherein the semiconductor light emitting device has a polymer layer surrounding the conductive semiconductor layer of the semiconductor light emitting device,
Wherein one surface of the semiconductor light emitting device is a lower surface of the polymer layer. The method according to claim 1,
Wherein a filler filling the receiving hole is applied to one surface of the substrate to form a planarization layer,
The electrode pattern
A pixel electrode pattern connected to the first conductive electrode and extending to the driving thin film transistor through a first hole of the planarization layer;
And a common electrode pattern connected to the second conductive type electrode and extending to the driving thin film transistor through a second hole of the planarization layer. Growing and etching a semiconductor layer on a growth substrate to form a plurality of semiconductor light emitting elements on the growth substrate;
Patterning a mask at a predetermined interval on one surface of a donor substrate and applying an adhesive material to one surface of the donor substrate to cover the mask to form an adhesive layer;
Transferring at least one of the plurality of semiconductor light emitting devices to the adhesive layer so as to overlap with the mask, and applying an adhesive having an ultraviolet (UV) curable material to the donor substrate;
Irradiating the ultraviolet rays to cure a portion of the applied adhesive located in the adhesive layer; And
And attaching the transferred semiconductor light emitting device to the wiring board using a portion of the applied adhesive disposed on one side of the transferred semiconductor light emitting device. 9. The method of claim 8,
Wherein the donor substrate is made of a material through which the ultraviolet light is transmitted. 10. The method of claim 9,
Wherein the ultraviolet light is irradiated from the opposite side of the adhesive layer with respect to the donor substrate, and the applied adhesive is not cured at a portion overlapping with the mask. 11. The method of claim 10,
Wherein the mask is formed of a metal material. 11. The method of claim 10,
Wherein the wiring board has a receiving hole formed therein and the semiconductor light emitting device transferred to the adhesive layer of the donor substrate is attached to the receiving hole by an uncured portion of the adhesive.

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