KR20180084979A - SiC 단결정 성장로의 클리닝 방법 - Google Patents

SiC 단결정 성장로의 클리닝 방법 Download PDF

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Publication number
KR20180084979A
KR20180084979A KR1020187017650A KR20187017650A KR20180084979A KR 20180084979 A KR20180084979 A KR 20180084979A KR 1020187017650 A KR1020187017650 A KR 1020187017650A KR 20187017650 A KR20187017650 A KR 20187017650A KR 20180084979 A KR20180084979 A KR 20180084979A
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KR
South Korea
Prior art keywords
single crystal
crystal growth
cleaning method
sic single
sic
Prior art date
Application number
KR1020187017650A
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English (en)
Other versions
KR102136942B1 (ko
Inventor
요스케 다니모토
히데유키 구리하라
Original Assignee
쇼와 덴코 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of KR20180084979A publication Critical patent/KR20180084979A/ko
Application granted granted Critical
Publication of KR102136942B1 publication Critical patent/KR102136942B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
KR1020187017650A 2015-12-28 2016-12-26 SiC 단결정 성장로의 클리닝 방법 KR102136942B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-256287 2015-12-28
JP2015256287 2015-12-28
PCT/JP2016/088697 WO2017115750A1 (ja) 2015-12-28 2016-12-26 ＳｉＣ単結晶成長炉のクリーニング方法

Publications (2)

Publication Number Publication Date
KR20180084979A true KR20180084979A (ko) 2018-07-25
KR102136942B1 KR102136942B1 (ko) 2020-07-22

Family

ID=59224725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187017650A KR102136942B1 (ko) 2015-12-28 2016-12-26 SiC 단결정 성장로의 클리닝 방법

Country Status (8)

Country Link
US (1) US11028474B2 (ko)
EP (1) EP3399076B1 (ko)
JP (1) JP6964520B2 (ko)
KR (1) KR102136942B1 (ko)
CN (1) CN108541278B (ko)
SG (1) SG11201805276VA (ko)
TW (1) TWI637072B (ko)
WO (1) WO2017115750A1 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004224663A (ja) 2003-01-27 2004-08-12 National Institute Of Advanced Industrial & Technology 単結晶成長装置
JP2013251487A (ja) 2012-06-04 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去方法及び炭化珪素成膜装置
KR20130141612A (ko) * 2010-12-24 2013-12-26 도요탄소 가부시키가이샤 단결정 탄화규소 액상 에피택셜 성장용 유닛 및 단결정 탄화규소의 액상 에피택셜 성장 방법
JP2015053393A (ja) 2013-09-06 2015-03-19 大陽日酸株式会社 サセプタのクリーニング方法
KR20150116900A (ko) * 2013-02-14 2015-10-16 샌트랄 글래스 컴퍼니 리미티드 클리닝 가스 및 클리닝 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562183B1 (en) 1999-04-07 2003-05-13 Ngk Insulators, Ltd. Anti-corrosive parts for etching apparatus
JP2000355779A (ja) * 1999-04-07 2000-12-26 Ngk Insulators Ltd エッチング装置用耐蝕部品
JP2001267241A (ja) * 2000-03-10 2001-09-28 L'air Liquide クリーニング方法及び装置並びにエッチング方法及び装置
US20030216041A1 (en) * 2002-05-08 2003-11-20 Herring Robert B. In-situ thermal chamber cleaning
JP4531833B2 (ja) 2007-12-05 2010-08-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びクリーニング方法
US8136354B2 (en) * 2008-03-14 2012-03-20 Energy Compression Inc. Adsorption-enhanced compressed air energy storage
JP2012019081A (ja) * 2010-07-08 2012-01-26 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、及び基板の製造方法
JP5542560B2 (ja) * 2010-07-20 2014-07-09 株式会社ニューフレアテクノロジー 半導体製造装置およびサセプタのクリーニング方法
JP5698043B2 (ja) 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
JP5700538B2 (ja) * 2011-03-29 2015-04-15 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
TW201341572A (zh) * 2011-12-22 2013-10-16 Solvay 電漿裝置和清潔該裝置之腔室的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004224663A (ja) 2003-01-27 2004-08-12 National Institute Of Advanced Industrial & Technology 単結晶成長装置
KR20130141612A (ko) * 2010-12-24 2013-12-26 도요탄소 가부시키가이샤 단결정 탄화규소 액상 에피택셜 성장용 유닛 및 단결정 탄화규소의 액상 에피택셜 성장 방법
JP2013251487A (ja) 2012-06-04 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去方法及び炭化珪素成膜装置
KR20150116900A (ko) * 2013-02-14 2015-10-16 샌트랄 글래스 컴퍼니 리미티드 클리닝 가스 및 클리닝 방법
JP2015053393A (ja) 2013-09-06 2015-03-19 大陽日酸株式会社 サセプタのクリーニング方法

Also Published As

Publication number Publication date
SG11201805276VA (en) 2018-07-30
US20190003046A1 (en) 2019-01-03
US11028474B2 (en) 2021-06-08
EP3399076A1 (en) 2018-11-07
WO2017115750A1 (ja) 2017-07-06
KR102136942B1 (ko) 2020-07-22
EP3399076A4 (en) 2019-08-21
TWI637072B (zh) 2018-10-01
JPWO2017115750A1 (ja) 2018-10-18
TW201736623A (zh) 2017-10-16
CN108541278B (zh) 2022-03-08
JP6964520B2 (ja) 2021-11-10
EP3399076B1 (en) 2022-05-11
CN108541278A (zh) 2018-09-14

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