KR20180083796A - 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 - Google Patents
발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 Download PDFInfo
- Publication number
- KR20180083796A KR20180083796A KR1020180002700A KR20180002700A KR20180083796A KR 20180083796 A KR20180083796 A KR 20180083796A KR 1020180002700 A KR1020180002700 A KR 1020180002700A KR 20180002700 A KR20180002700 A KR 20180002700A KR 20180083796 A KR20180083796 A KR 20180083796A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- transparent substrate
- wafer
- emitting diode
- transparent
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000005520 cutting process Methods 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2017-004001 | 2017-01-13 | ||
| JP2017004001A JP2018113384A (ja) | 2017-01-13 | 2017-01-13 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180083796A true KR20180083796A (ko) | 2018-07-23 |
Family
ID=62867515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180002700A KR20180083796A (ko) | 2017-01-13 | 2018-01-09 | 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018113384A (zh) |
| KR (1) | KR20180083796A (zh) |
| CN (1) | CN108305931A (zh) |
| TW (1) | TW201826492A (zh) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014175354A (ja) | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198918B (zh) * | 2013-05-15 | 2020-10-02 | 皇家飞利浦有限公司 | 具有衬底中的散射特征的led |
| JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
| JP2015018953A (ja) * | 2013-07-11 | 2015-01-29 | 株式会社ディスコ | 発光チップ |
| JP6176171B2 (ja) * | 2014-03-28 | 2017-08-09 | 豊田合成株式会社 | 発光装置の製造方法 |
-
2017
- 2017-01-13 JP JP2017004001A patent/JP2018113384A/ja active Pending
- 2017-12-06 TW TW106142741A patent/TW201826492A/zh unknown
- 2017-12-27 CN CN201711442430.9A patent/CN108305931A/zh active Pending
-
2018
- 2018-01-09 KR KR1020180002700A patent/KR20180083796A/ko not_active Application Discontinuation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014175354A (ja) | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108305931A (zh) | 2018-07-20 |
| JP2018113384A (ja) | 2018-07-19 |
| TW201826492A (zh) | 2018-07-16 |
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|---|---|---|---|
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |