KR20180067186A - A copper thick film deposition apparatus using high??frequency induction heating and heat sink for oled lighting comprising the copper thick film manufactured thereby - Google Patents

Abstract

The present invention relates to a copper thick film deposition apparatus and a heat radiating plate for an OLED lighting. The copper thick film deposition apparatus using high frequency induction heating of the present invention comprises: a tungsten crucible formed with an opened entrance; a cylindrical body keeping the opened entrance of the crucible while being formed at the outside of the crucible, and including a heating body and an insulating material; and a high frequency induction heating coil formed to wind the outer surface of the body portion.

Description

TECHNICAL FIELD The present invention relates to a copper thick film deposition apparatus and a copper thick film heat sink using OLED lighting using high frequency induction heating, and more particularly, to a COPPER THICK FILM DEPOSITION APPARATUS USING HIGH, FREQUENCY INDUCTION HEATING AND HEAT SINK FOR OLED LIGHTING COMPRISING THE COPPER THICK FILM MANUFACTURED THEREBY,

The present invention relates to a copper thick film deposition apparatus using a high frequency induction heating system and a heat sink for OLED lighting including a copper thick film produced therefrom.

m 두께의 구리 금속 후막증착을 하는 기술에 대한 필요성이 대두되고 있다. In recent years, deposition of metal thin films in OLED / LED heat sinks or semiconductor fabrication has been mostly carried out by vapor deposition or sputtering. However, in the field of high-power high efficiency devices such as AMOLED TFT wiring and high power LEDs,

there is a growing need for a technique for depositing a copper metal thick film of thickness < RTI ID = 0.0 > m. < / RTI >

Conventional methods for forming a copper thin film include a dry method such as thermal evaporation, sputtering, and an electron beam method and a wet method. However, the dry method has a too low deposition rate, and the wet method has a problem of being vulnerable to moisture and impurities. Therefore, in order to secure the thick film manufacturing process technology that can be used in the manufacture of AMOLED, OLED for high power lighting, and manufacturing thick film for heat dissipation, it is required to have a high deposition rate and good uniformity of thin film, It is necessary to study the development of deposition technology.

On the other hand, in the case of an OLED lighting device, a heat sink is required for emitting heat generated in the device. Depending on the material formed on the heat sink, the durability of the lighting device can be greatly influenced. Currently, heat dissipation of OLED lighting devices uses heat sinks with thick films made of highly conductive materials such as copper. In this type of heat sink, a thick film formed of a material having excellent thermal conductivity is required for securing the heat dissipation function. Thin film deposited by CVD (Chemical Vapor Deposition) method having high purity has excellent quality of the thin film, but the deposition rate is too low Several hundred nm / min).

SUMMARY OF THE INVENTION An object of the present invention is to provide a heat sink for OLED lighting using a copper thick film to improve the deposition rate of a copper thin film and to secure uniformity of a thin film thickness.

 More particularly, the present invention relates to an apparatus for manufacturing an effective copper thick film capable of high-speed deposition by adopting a high-frequency induction heating system and designing a method of optimizing the heating method of copper in the crucible and adjusting the distance from the crucible to the target, And to provide a heat sink for OLED lighting including a copper thick film.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

 A copper thick film deposition apparatus using high frequency induction heating, comprising: a cylindrical body including a heating element and a heat insulating material; a tungsten crucible having an open inlet formed therein and holding the open inlet and formed outside the crucible; And a high frequency induction heating coil formed.

 According to an embodiment of the present invention, the heating element may be formed to surround the tungsten crucible, and the heat insulating material may be formed to surround the heating element.

 According to an embodiment of the present invention, the heating element includes at least one selected from the group consisting of graphite, ceramics, and tungsten, and the heat insulating material is formed to surround the outer surface of the heating element, Wherein the first insulating material comprises at least one selected from the group consisting of a carbonaceous material and a ceramic material, and at least one material selected from the group consisting of aluminum oxide and magnesium oxide, 2 insulation.

 According to an embodiment of the present invention, the shape of the tungsten crucible decreases as the depth increases,

 The deposition apparatus may be capable of controlling a solid angle of a tungsten crucible inlet.

 According to an embodiment of the present invention, the vertical distance from the crucible inlet to the mounting point of the material to be deposited may be 5 cm to 30 cm.

 According to an embodiment of the present invention, the deposition rate of the copper thick film deposition apparatus may be 700 Å / s or more.

 The heat sink for OLED lighting including the copper thick film according to an embodiment of the present invention includes a copper thick film manufactured using the copper thick film deposition apparatus provided in an embodiment of the present invention, Lt; RTI ID = 0.0 > 200 < / RTI >

 According to an embodiment of the present invention, the thickness uniformity difference of the copper thick film may be 2% or less.

 According to the present invention, it is possible to provide a copper thick film deposition apparatus capable of forming a copper thick film with uniform thickness and excellent quality while maintaining a rapid deposition rate. According to another aspect of the present invention, there is provided a heat sink for OLED lighting capable of being manufactured in a simplified manner with excellent heat dissipation performance including a copper thick film formed by the copper thick film deposition apparatus.

1 is a cross-sectional view showing a crucible, a cylindrical body, and a high frequency induction heating coil of a copper thick film deposition apparatus provided in an embodiment of the present invention.
Fig. 2 is a conceptual diagram schematically showing a change in sectional area according to a depth of a crucible shape provided in an embodiment of the present invention. Fig.
Fig. 3 is a schematic view expressing the direction and angle in which the copper particles of the crucible advance toward the evaporation material, in accordance with an embodiment of the present invention. Fig.

In the following, embodiments will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Various modifications may be made to the embodiments described below. It is to be understood that the embodiments described below are not intended to limit the embodiments, but include all modifications, equivalents, and alternatives to them.

The terms used in the examples are used only to illustrate specific embodiments and are not intended to limit the embodiments. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this embodiment belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. In the following description of the embodiments, a detailed description of related arts will be omitted if it is determined that the gist of the embodiments may be unnecessarily blurred.

In the copper thick film deposition apparatus of the present invention, unlike the light emitting diode LED heat sink having a complicated structure with a large area, it is possible to use a thin film thick film for depositing a copper thin film having a high thermal conductivity which can be used for OLED lighting, Method.

In the copper thick film deposition apparatus of the present invention, a high frequency induction heating method capable of realizing an ultra-high deposition rate by heating a crucible can be applied. The heating system using high frequency includes an oil heating method for heating wood and fiber, an energization heating method for heating a non-conductive material such as glass to lower specific resistances and then directing a high frequency to an object, and a microwave heating method for use in a domestic microwave oven In an embodiment of the present invention, since copper, which is a metal having high conductivity, needs to be heated, an induction heating method used for heating conductors and semiconductors such as metal may be used.

When the high frequency induction heating method used in the present invention is used, the efficiency is increased by heating directly by the heated body itself, and the cost of manufacturing the facility is higher, so that the total production cost can be lowered to less than half of the other fuel apparatuses. Also, by selecting an appropriate frequency according to the material and the size of the object to be heated, uniform temperature and speed can be controlled, and mass production at a high speed can be achieved.

The frequency of the high frequency used in the present invention may fluctuate in heating temperature or the like if frequency fluctuation occurs, and therefore precise control is required. At this time, the higher the frequency, the better, so it is preferable to select a frequency at least five times the critical frequency. However, when the frequency is excessively high, problems due to the skin effect or the proximity effect may occur, and it is preferable to limit the frequency to 60 Hz or less in consideration of the power supply source.

1 is a cross-sectional view showing a crucible, a cylindrical body, and a high frequency induction heating coil of a copper thick film deposition apparatus provided in an embodiment of the present invention.

A copper thick film deposition apparatus using high frequency induction heating, comprising: a cylindrical body including a heating element and a heat insulating material; a tungsten crucible having an open inlet formed therein and holding the open inlet and formed outside the crucible; And a high frequency induction heating coil formed.

The present invention provides a tungsten crucible (100) capable of accommodating a molten copper (400). In this case, the material of the crucible may include, in addition to tungsten, a metal which can withstand a high temperature at which copper is melted and is easy to transfer heat and easy to shape. It is also preferable that the material of the crucible is capable of performing a function of a heating element which is heated together with the heating target by a high frequency.

The geometry of the crucible may be a factor that affects the density of copper particles moving toward the object after copper has melted. The crucible used in the present invention may include an opening opened to the outside and gradually become narrower as the depth becomes deeper.

The crucible may be included in a cylindrical body 200 including a heating element and a heat insulating material.

The heating element can perform the function of transferring the heat generated by the high-frequency induction heating to the crucible inside. The heat insulating material blocks the external low temperature and the high temperature inside so that the temperature of the tungsten crucible is not easily lowered Can be performed.

The coil 300 used for high-frequency induction heating may be formed to wind around the outer surface of the cylindrical body portion. The material of the coil, the number of times the cylindrical body is wound, and the like are not particularly limited in the present invention as long as the copper thick film can be formed by controlling the temperature of the copper molten metal.

According to an embodiment of the present invention, the heating element may be formed to surround the tungsten crucible, and the heat insulating material may be formed to surround the heating element.

When the high frequency induction heating method of the present invention is used, the copper metal to be heated is directly heated by itself to have a high internal temperature, so that the heating element can be positioned outside the crucible containing the heating target.

At this time, when a current flows to the external coil, the heating element can perform a function of generating heat together with the copper material of the heating object body in the tungsten by a high frequency.

And a heat insulating material may be formed on the outside of the heating body so as to prevent heat loss to the outside at a low temperature.

 According to an embodiment of the present invention, the heating element includes at least one selected from the group consisting of a carbon compound including graphite, ceramic and tungsten, and the heat insulating material is formed to surround the outer surface of the heating element , A carbon-based material including graphite, and a ceramic material, and at least one selected from the group consisting of aluminum oxide and magnesium oxide, which is formed to surround the first heat insulating material, And a second insulation including one.

 The component of the heating element may include at least one selected from the group consisting of a carbon-based material including graphite, a ceramic material, and tungsten. When copper as a material to be heated is heated by heating with high frequency, It may be a component which can generate heat together under the same conditions.

 The component of the first heat insulator includes at least one selected from the group consisting of a carbon-based material and a ceramic material including graphite, and the component of the second heat insulator includes at least one selected from the group consisting of aluminum oxide and magnesium oxide And may include any one of them.

 In the present invention, the second insulating material is formed to surround the first insulating material, directly contacts with the external low temperature, and is directly wound around the coil generating the high frequency, and is preferably made of a different material from the first insulating material . By forming the second heat insulator with the above-mentioned components different from the first heat insulator, cracking due to volume expansion can be prevented in the present invention.

 Fig. 2 is a conceptual diagram schematically showing a change in sectional area according to a depth of a crucible shape provided in an embodiment of the present invention. Fig.

 According to an embodiment of the present invention, the cross-sectional area of the tungsten crucible decreases as the shape of the tungsten crucible becomes deeper, and the deposition apparatus may control the solid angle of the tungsten crucible inlet.

 According to one aspect of the present invention, the deposition rate per hour of the copper film formed on the deposited material can be controlled by selecting and controlling a proper solid angle from the entrance of the tungsten crucible to the mounting point of the deposited material. The solid angle serves to control the density of copper particles that are directed to the deposited material in the deposition apparatus. The control method of the solid angle may be to rotate the angle of the tungsten crucible toward the deposited material, or to provide an auxiliary means such as a plate capable of controlling the solid angle at the entrance of the tungsten crucible. As described above, in the present invention, the structure capable of controlling the solid angle of the tungsten crucible is not particularly limited as long as it is a device capable of selecting the solid angle of the tungsten crucible.

The reduction rate of the cross-sectional area can be obtained by calculating the cross-sectional area of the material that can be contained in the crucible as the depth increases. According to FIG. 2, the reduction rate of the cross-sectional area corresponds to a value obtained by dividing the difference between the area of S ₁ and the area of S ₂ by h _{12, which} is the height difference between two cross-sectional areas. The geometry of the crucible may be a factor that affects the density of copper particles moving toward the object after copper has melted.

 According to an embodiment of the present invention, the vertical distance from the crucible inlet to the mounting point of the material to be deposited may be 3 cm to 30 cm.

The straight line distance from the inlet of the crucible to the deposition target mounting position where the deposition target is located is a factor that can control the density of the deposited target and the density of the melted target target particles. At this time, when the vertical distance from the crucible inlet to the mounting point of the deposited material is less than 3 cm, the molten particles in the crucible may spatter resulting in a defect in the surface of the deposited material. In addition, when the vertical distance from the crucible inlet to the mounting point of the deposited material is more than 30 cm, the probability of the molten heated body particles reaching the deposited body decreases, and the deposition rate of the thin film may be lowered.

In other words, in order to form a high-quality copper thick film without defects while maintaining a high deposition rate, it may be important to control the distance from the crucible inlet to the deposition target mounting point in addition to the shape of the crucible.

Fig. 3 is a schematic view expressing the direction of the advancing direction and the angle of the solid angle of the copper particles of the crucible toward the evaporation material, according to an embodiment of the present invention. Fig.

3, it can be seen that as the distance from the deposition point is increased, the area of the target is larger and the deposition rate of copper particles per hour is slower. That is, in addition to the vertical distance from the crucible inlet to the deposition site, it is understood that the depth of the crucible can also be another important factor in controlling the deposition rate. Therefore, the depth of the crucible provided in the present invention may be 5 cm to 20 cm.

It can also be seen that the density of the copper particles that can be deposited on the deposited material may vary with the deformation of the solid angle. Accordingly, the deposition apparatus provided in the present invention may include a configuration capable of controlling the solid angle of the tungsten crucible.

According to an embodiment of the present invention, the deposition rate of the copper thick film deposition apparatus may be 700 Å / s or more. When the copper thick film deposition apparatus provided in the present invention is used, a high quality copper thick film can be formed at a rate of 700 ANGSTROM or more per second. The deposition rate may be less than 2000 A per second.

 The heat sink for OLED lighting including the copper thick film according to an embodiment of the present invention includes a copper thick film manufactured using the copper thick film deposition apparatus provided in an embodiment of the present invention, Lt; RTI ID = 0.0 > 200 < / RTI >

 The copper thick film can control the deposition rate by controlling the frequency of the high frequency applied to the heating target, and the thickness of the finally formed copper thick film can be controlled by controlling the deposition time in the copper thick film deposition apparatus .

 According to an embodiment of the present invention, the thickness uniformity difference of the copper thick film may be 2% or less.

The copper thick film provided in the present invention is uniformly formed at a high deposition rate while maintaining a high deposition rate. When the uniformity of thickness of the formed copper thick film is compared, the thickness difference between the thickest portion and the thinnest portion is 2% Or less.

Example

In the embodiment of the present invention, copper is placed in a tungsten crucible, graphite is formed on the outside of the tungsten crucible as a heating element, graphite is formed on the outside thereof as a primary heat insulator, and graphite is formed on the outside thereof as a secondary insulator. Was formed to have a thickness of 0.5 mm, and then a high frequency induction heating coil was wound on a cylindrical body to form a copper thick film deposition apparatus as shown in FIG. The vertical distance between the inlet of the crucible and the part to which the deposition material was attached was maintained at 20 cm.

At 5 seconds after applying a voltage of 100 V to the coil used for induction heating, the current was measured at 11.1 A and the copper temperature was at 35 ° C.

At 5 seconds after applying a voltage of 160 V to the coil used for induction heating under the same conditions, the current was measured at 19.3 V and the copper temperature was formed at 121 ° C.

At 30 seconds after applying a voltage of 200 V under the same conditions, a current of 25.8 V was formed and a copper temperature of 491 캜. At this time, the thickness of the copper thick film formed on the deposit was measured by opening the shutter of the vapor deposition apparatus, and it was confirmed that a homogeneous copper thick film having an average thickness of 0.162 mm was formed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, if the techniques described are performed in a different order than the described methods, and / or if the described components are combined or combined in other ways than the described methods, or are replaced or substituted by other components or equivalents Appropriate results can be achieved.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (8)

A tungsten crucible with an open mouth;
A cylindrical body formed outside the crucible while maintaining the open inlet, the cylindrical body including a heating element and a heat insulating material; And
And a high frequency induction heating coil formed to wind the outer surface of the body portion,
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
The method according to claim 1,
The heating element is formed to surround the tungsten crucible,
Wherein the heat insulating material is formed so as to surround the heating element.
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
The method according to claim 1,
Wherein the heating element includes at least one selected from the group consisting of a carbon-based material including graphite, a ceramic material, and tungsten,
Wherein the heat insulating material is formed to surround an outer surface of the heat generating element and includes at least one selected from the group consisting of a carbon-based material including graphite and a ceramic material,
And a second insulation formed to surround the first insulation and including at least one selected from the group consisting of aluminum oxide and magnesium oxide.
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
The method according to claim 1,
As the shape of the tungsten crucible becomes deeper, the cross-sectional area decreases.
Wherein the deposition apparatus is capable of controlling a solid angle of a tungsten crucible inlet.
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
The method according to claim 1,
Wherein the vertical distance from the crucible inlet to the mounting point of the material to be deposited is 5 cm to 30 cm.
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
The method according to claim 1,
The deposition rate of the copper thick film deposition apparatus is not less than 700 ANGSTROM / s,
Copper Thick Film Deposition Device Using High Frequency Induction Heating.
A copper thick film produced by using the copper thick film deposition apparatus according to any one of claims 1 to 6,
Wherein the thickness of the copper thick film is 5 占 퐉 to 200 占 퐉,
A heat sink for OLED lighting including a copper thick film.
8. The method of claim 7,
The thickness uniformity difference of the copper thick film is 2% or less,
A heat sink for OLED lighting including a copper thick film.

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