KR20180064110A - Semiconductor sensor, menufacturing method for the semiconductor sensor and sensing device - Google Patents

Abstract

A semiconductor device disclosed in an embodiment includes a substrate, a light emitting unit placed on the substrate, and a sensor unit disposed on at least one of the substrate and the light emitting unit. The light emitting unit includes a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer. The sensor unit includes a first pad portion, a second pad portion apart from the first pad portion, an electrode portion extending from the first pad portion and connected to the second pad portion, and a sensing material disposed on the electrode portion. The sensing material includes at least one first region overlapping the electrode portion in a vertical direction and at least one second region not overlapping the electrode portion in the vertical direction. The surface of the sensing material corresponds to at least one of the upper and side surfaces of the light emitting unit and the resistance of the sensing material can be changed by light emitted from the light emitting unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device, a method of manufacturing a semiconductor device, and a sensing device.

Embodiments relate to semiconductor devices.

Embodiments relate to semiconductor devices for gas sensing.

An embodiment relates to a gas sensing device and a sensing method.

Embodiments relate to sensing devices having sensors for gas sensing.

An embodiment relates to a sensing device having a gas sensor.

There are many kinds of gases in our living environment. Problems such as gas accidents in general homes, businesses, construction sites, explosion accidents in petroleum combinets, mines, chemical plants, and pollution pollution are continuing. Human sensory organs can not quantitatively determine the concentration of the hazardous gas or can hardly distinguish the type of the gas. In order to cope with this problem, a gas sensor using physical properties or chemical properties of a material has been developed and used for leakage detection, concentration measurement and alarm for gas.

Such gas sensors have been studied for a long time, and many types of gas sensors are now commercially available. When a gas component is adsorbed on the surface of a semiconductor or reacted with an adsorbing gas such as oxygen or the like which has been previously adsorbed, a gas sensor using a semiconductor causes electron exchange between the adsorbing molecules and the surface of the semiconductor, Surface potential, and the like, which are the principle of detecting such a change.

Semiconductor gas sensors are simpler in structure, easier to process, smaller in size and lower in power consumption than optical gas sensors or electrochemical gas sensors through measurement of conductivity by measurement spectrum or ion mobility .

Embodiments provide a semiconductor device for gas detection and a method of manufacturing the same.

Embodiments provide a semiconductor device for sensing a change in resistance due to a sensing material and a method of manufacturing the same.

The embodiment provides an electrode portion continuously connected between two pad portions, a semiconductor element for detecting a change in resistance in a sensing material disposed on the electrode portion, and a manufacturing method thereof.

An embodiment provides a semiconductor device having a sensing material that detects a gas in response to light emitted from a light emitting portion, and a method of manufacturing the same.

The embodiment provides a semiconductor device having a light emitting portion for irradiating ultraviolet light and a sensor portion for detecting gas.

An embodiment provides a semiconductor element in which a sensor portion is disposed on at least one of a semiconductor layer and a substrate of a light emitting portion.

An embodiment provides a semiconductor device in which a sensor portion is disposed in an area adjacent to a light emitting portion.

Embodiments provide a sensing device having a gas sensor or semiconductor device.

Embodiments provide a method of sensing a gas sensor or a semiconductor device.

A semiconductor device according to an embodiment includes a substrate, a light emitting portion disposed on the substrate, And a sensor portion disposed on at least one of the substrate and the light emitting portion, wherein the light emitting portion includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, An active layer disposed between the layers; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive type semiconductor layer, wherein the sensor portion includes a first pad portion, a second pad portion spaced apart from the first pad portion, and a second pad portion extending from the first pad portion, And a sensing member disposed on the electrode portion, wherein the sensing member includes at least one first region overlapping the electrode portion in the vertical direction, and at least one second region overlapping the electrode portion in a direction perpendicular to the electrode portion, Wherein the surface of the sensing material corresponds to at least one of an upper surface and a side surface of the light emitting portion, and the sensing material may be changed in resistance by the light emitted from the light emitting portion .

A sensing device according to an embodiment includes: a circuit board; A semiconductor device including a substrate on the circuit board, a light emitting portion on the substrate, and a sensor portion on the light emitting portion; A package body disposed around the semiconductor element; And a reflective plate on the semiconductor element, the substrate including a light emitting portion disposed on the substrate; And a sensor portion disposed on at least one of the substrate and the light emitting portion, wherein the light emitting portion includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, An active layer disposed between the layers; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive type semiconductor layer, wherein the sensor portion includes a first pad portion, a second pad portion spaced apart from the first pad portion, and a second pad portion extending from the first pad portion, And a sensing member disposed on the electrode portion, wherein the sensing member includes at least one first region overlapping the electrode portion in the vertical direction, and at least one first region overlapping the electrode portion in a direction perpendicular to the electrode portion, Wherein the surface of the sensing material corresponds to at least one of the upper surface and the side surface of the light emitting portion and the resistance of the sensing material may be changed by the light emitted from the light emitting portion.

According to the embodiment, the first region and the second region of the sensing material may be alternately arranged.

According to the embodiment, the electrode unit may include a plurality of line patterns overlapping with the first region of the sensing material in the vertical direction.

According to the embodiment, the first and second pad portions and the electrode portion may be overlapped with the active layer in the vertical direction.

According to the embodiment, the interval between the line patterns is larger than the width of each line pattern, and the total length of the electrode portion may be longer than the distance between the first and second pad portions.

According to the embodiment, the second region may be disposed between the line patterns, respectively.

According to an embodiment of the present invention, an insulating layer may be disposed between the sensing material and the light emitting portion.

According to the embodiment, the light emitting portion may include a conductive layer between the sensor portion and the second conductive type semiconductor layer.

According to the embodiment, the substrate may be disposed between the light emitting structure layer and the sensor unit.

According to an embodiment of the present invention, the light emitting portion generates ultraviolet light, and the sensing material may react with the ultraviolet light.

According to an embodiment, the substrate may comprise a transparent material or a conductive material.

According to the embodiment, the electrode unit can be electrically separated from the first and second electrodes.

According to an embodiment of the present invention, the sensing material includes a main sensing material and a catalyst, and the main sensing material is selected from the group consisting of SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , and AB ₂ O ₄ Wherein the catalyst is selected from the group consisting of platinum (Pt), copper (Cu), rhodium (Rd), gold (Au), palladium (Pd), iron (Fe), titanium (Ti), vanadium V, Cr, Ni, Al, Zr, Nb, Mo, Ru, Rh, Ag, And may include at least one or more of hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), and iridium (Ir).

The embodiment can improve the reliability of the semiconductor element by providing the semiconductor element having the sensor portion using the light irradiated from the light emitting portion.

The embodiment realizes the semiconductor device using the light of the LED without the heater, thereby solving the problems such as the durability of the heater and the warm-up time due to the heater.

In the embodiment, the size of the semiconductor element can be reduced by disposing the sensor portion on the upper or outer side of the light emitting portion.

The embodiment can realize a semiconductor device in which the sensor portion is disposed on the light emitting portion of the horizontal chip structure.

Embodiments can implement a semiconductor device in which a sensor portion is disposed on a light emitting portion of a flip chip structure.

The embodiment can implement a semiconductor device in which a sensor portion is disposed on a light emitting portion of a vertical chip structure.

The embodiment can improve the sensing sensitivity of the semiconductor device.

The embodiment can downsize the semiconductor device.

The embodiment can reduce the power consumption of the semiconductor device.

The embodiment can improve the reliability of the semiconductor device and the sensing device having the semiconductor device.

1 is a plan view of a semiconductor device according to the first embodiment.
2 is a cross-sectional view of the semiconductor device of Fig. 1 on the AA side.
3 is a view for explaining the operation of the semiconductor device according to the embodiment.
4 is a first example of the semiconductor device of Fig.
5 is a second modification of the semiconductor device of FIG.
6 is a third modification of the semiconductor device of FIG.
7 is a perspective view of a semiconductor device according to the second embodiment.
8 is a modification of the semiconductor device of FIG.
9 is a perspective view of a semiconductor device according to the third embodiment.
10 is a side sectional view of the semiconductor device according to the fourth embodiment.
11 is a side sectional view of the semiconductor device according to the fifth embodiment.
12 is a side cross-sectional view showing a gas sensing device having a semiconductor device according to an embodiment.
13 is a side sectional view showing a gas sensing device having the semiconductor element of Fig.
14 is a block diagram showing a gas sensing system according to an embodiment.
15 is a graph showing the rate of change of resistance according to the gas sensing according to the embodiment.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below. Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood. For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

<Examples>

FIG. 1 is a plan view of a semiconductor device according to the first embodiment, and FIG. 2 is a sectional view taken on the A-A side of the semiconductor device of FIG.

Referring to FIGS. 1 and 2, a semiconductor device according to an embodiment may include a sensor unit 105. The sensor unit 105 includes pad units 151 and 153, an electrode unit 152 connected to the pad units 151 and 153 and a sensing member 150 disposed on the electrode unit 152. The sensing member 150 and the electrode unit 152 may be disposed on the insulating layer 113. The insulating layer 113 may be disposed on at least one of the substrate 111 and the semiconductor layer.

The size of the semiconductor element 105 may be in the range of (horizontal) x (vertical), for example, (300 m to 20000 m) x (300 m to 20000 m). The thickness or height of the semiconductor element 105 may be in the range of 500 탆 or less, for example, 30 탆 to 500 탆. The first axis direction on the plane may be a transverse direction or an X axis direction, and the second axis direction may be a longitudinal direction or a Y axis direction orthogonal to the X axis direction. The third axis direction may be a height or a thickness direction, or may be a Z axis direction orthogonal to the first and second axis directions.

&Lt; Substrate (11) >

The substrate 111 may be a conductive or insulating material. The substrate 111 may be a semiconductor substrate or a non-semiconductor substrate. The substrate 11 may be a light-transmitting or non-light-transmitting substrate. The substrate 111 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ and GaAs. The substrate 11 may be formed of a GaN-based semiconductor, for example, a GaN semiconductor. The substrate 111 may be a bulk GaN single crystal substrate. The substrate 111 may be used as a supporting member for supporting the sensor unit 105.

The thickness of the substrate 111 may be in the range of 30 μm or more, for example, 30 μm to 3000 μm. When the thickness of the substrate 111 is smaller than the thickness of the above range, Can be large. The length of the substrate 111 in the first axis X direction and the length in the second axis Y direction may be the same or different. For example, the length of the substrate 111 in the X-axis direction may be greater than the length in the Y-axis direction. The sensor unit 105 may be removed without providing the substrate 111 or may be provided without a substrate.

As another example, the substrate 111 may be a circuit board. If the substrate 111 is a circuit board having a circuit pattern, at least one or both of the semiconductor layer and the insulating layer 113 may be removed. The circuit board may include at least one of a resin-made PCB, a metal core PCB (MCPCB) having a metal core, and a flexible PCB (FPCB), but is not limited thereto. The circuit board may include a ceramic material.

<Semiconductor Layer 122>

The semiconductor layer 122 may be disposed of a compound semiconductor of group II to VI elements. The semiconductor layer 122 may include at least one of group II and group V compound semiconductors and group III and group V compound semiconductors.

When the semiconductor layer 122 is conductive, the insulating layer 113 may be disposed between the semiconductor layer and the pad portions 151 and 153 and the electrode portion 152. If the semiconductor layer is insulative, the insulating layer 113 may be removed or provided thinner. When the semiconductor layer 122 is conductive, it may be an n-type semiconductor layer having an n-type dopant, or a p-type semiconductor layer having a p-type dopant.

The semiconductor layer 122 may be formed of at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO. The semiconductor layer 122 may include a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? The semiconductor layer 122 may be a single layer or a multi-layer, and may include a different semiconductor layer in the case of the multi-layer.

A buffer layer (not shown) may be disposed between the semiconductor layer 122 and the substrate 111. The buffer layer may be disposed of a compound semiconductor of group II to VI elements. The buffer layer may include at least one of group II and group V compound semiconductors and group III and group V compound semiconductors. The buffer layer may be formed of at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and ZnO. The semiconductor layer 122 may include a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? The buffer layer may be a doped semiconductor or an unintentional doped semiconductor.

The semiconductor layer 122 may be a light emitting structure layer, and may include at least one or both of a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, for example. The first conductive semiconductor layer may include an n-type semiconductor layer disposed on the substrate 111, and the second conductive semiconductor layer may include a p-type semiconductor layer on the active layer. As another example, the first conductive semiconductor layer may include a p-type semiconductor layer and the second conductive semiconductor layer may include an n-type semiconductor layer. The active layer may selectively emit light within a wavelength range from ultraviolet light to visible light or infrared light, and may emit light having an ultraviolet peak wavelength or light having a blue peak wavelength, but the present invention is not limited thereto.

The insulating layer 113 may be an insulating sheet or a layer, but is not limited thereto. The insulating layer 113 may include, for example, a nitride or an oxide-based insulating material. For example, SiN _{2 ,} SiN _{4 ,} Si ₃ N ₄ SixNy (x> 0, y> 0), SiO x (X> 0), SiO x N y (x> 0, y> 0) having a SiO ₃ N _y4 containing SiO ₂ comprising at least one of, And Al ₂ O ₃ Al _x O _y (x> 0, y> 0). If the insulating layer 113 is SixNy, it may be formed of the same equipment as the semiconductor layer 122. As another example, the insulating layer 113 may be formed as a single layer or a multilayer. The thickness of the insulating layer 113 may be less than the thickness of the substrate 111. The thickness of the insulating layer 113 may be thinner or thicker than the thickness of the semiconductor layer 122. The thickness of the insulating layer 113 may be in a range of 200 nm or more, for example, 500 nm to 10000 nm. If the thickness of the insulating layer 113 is less than the above range, electrical interference may occur. If the thickness of the insulating layer 113 is exceeded, the stress between the insulating layer 113 and the semiconductor layer 122 becomes too large, The reliability may be lowered or the wavelength of light emitted from the semiconductor layer may be different from the designed wavelength when the semiconductor layer 122 is a light emitting structure layer.

The sensing material 150, the pad portions 151 and 153, and the electrode portion 152 may be disposed on the upper surface of the insulating layer 113. The insulating layer 113 may overlap the sensing member 150 and the electrode unit 152 in the z-axis direction. The insulating layer 113 may be removed on the sensor unit 105. The removal process of the insulating layer 113 may be removed after forming the sensing material 150.

The sensing unit 150, the pad units 151 and 153, and the electrode unit 152 may be defined as a sensor unit. The sensor unit 105 of the embodiment may further include the insulating layer 113. The sensor unit 105 may include at least one of a substrate 111 and a semiconductor layer 122 as a supporting member under the insulating layer 113.

&Lt; Sensing material 150 >

The sensing material 150 may include a material that is activated at a predetermined wavelength. The sensing material 150 may be activated by light emitted from a light emitting unit described later. Here, the activation may include a change in resistance of the sensing material 150. The sensing material 150 may be disposed in a direction in which the light emitted from the light emitting unit proceeds or may be disposed on a path directly irradiated with light or indirectly irradiated.

The sensing material 150 may be disposed between the first and second pad portions 151 and 153 and may be disposed on the electrode portion 152. The sensing material 150 may be disposed in an area between the patterns of the electrode parts 152 and may be in contact with the surfaces of the patterns. The sensing material 150 may be activated by the irradiated light to change the resistance of the electrode unit 152.

2, the sensing member 150 includes a plurality of first regions R1 that are overlapped with different regions of the electrode unit 152 in the vertical direction, and a plurality of second regions R1 that are overlapped with the second regions R1, And a region R2. The second region R2 of the sensing material 150 may be an area protruding toward the substrate 111 or the bottom between the plurality of first regions R1. The resistance of the sensing material 150 may be changed by light. The sensing material 150 may have low resistance or conductivity due to incident light. The sensing member 150 may be disposed on the electrode unit 152. The second region R2 may be disposed between neighboring patterns of the electrode portion 152. [ The first and second regions R1 and R2 may have a predetermined length and may be alternately arranged. A portion of the second region R2 may be equal to the interval D1 between the patterns of the electrode portions 152. [ The second region R2 may extend in one direction with a long length and the extending direction of the second region R2 may be parallel to the extending direction of the pattern of the electrode portion 152. [ The interval D1 between the first electrode portions 152 may be in a range of 50 mu m or more, for example, 50 mu m to 500 mu m. The resistance value for gas measurement can be determined according to the interval D1 between the electrode units 152. The closer the distance D1 between the electrode units 152 is, the lower the resistance value of the sensing material 150 have. Accordingly, neighboring patterns of the electrode unit 152 can be electrically connected.

The sensing member 150 may be in contact with the electrode unit 152 in an area between the patterns of the electrode unit 152. Since the sensing material 150 has low resistance or conductivity due to light, it is possible to electrically connect the patterns of the adjacent electrode units 152. The sensing material 150 may have a first resistance due to incident light and may be changed to a second resistance lower than the first resistance when an external gas is introduced. Accordingly, the sensing material 150 reduces the electrical resistance between patterns of the electrode part 152 by light and gas, and electrically connects the patterns of the electrode part 152 electrically through the second area R2. You can connect them. The electrode unit 152 is electrically connected by the sensing member 150 and the resistance between the electrode units 152 is lowered so that the resistance can be detected by the first and second pad units 151 and 152 . The change in the detected resistance can measure the presence or absence of gas by the semiconductor element.

The sensing material 150 may be disposed on the surface of the insulating layer 113. The sensing material 150 may be formed of a metal oxide. The sensing material 150 may include a main sensing material and a catalyst. The main sensing material comprises a metal oxide material, and the catalyst may comprise a metal. The main sensing material may be selected from the group consisting of SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , ₂ O ₄ , &Lt; / RTI &gt; and the like. The catalyst of the sensing material 150 may be at least one selected from the group consisting of Pt, Cu, Rh, Au, Pd, Fe, Ti, (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir) Such a catalyst material may be mixed with the primary sensing material as a doping material in the sensing material 150. [ The sensing material 150 may include materials that may have both sensing and catalytic properties. The material of the sensing material 150 according to the embodiment may be selectively mixed with the main sensing material and the catalyst according to the type of gas to be sensed.

The sensing material 150 may include grains, and the sizes of the grains may be the same or different from each other. The size of the grain may be in the range of 2 nm or more, for example, 2 nm to 20 nm. If the size of the sensing material 150 is smaller than the above range, the sensitivity of the sensing material 150 may be lowered.

The sensing material 150 may mix one or two or more kinds of main sensing materials, and the mixed material may be doped with one or two kinds of catalyst materials. The main sensing material may be a mixture of one or two kinds, and may be set to a range capable of responding to a specific gas, and may have a gas sensing property and a gas content of 25 mol% to 75 mol%. The catalyst material may be added in an amount of 5 wt% or less, for example, 1 wt% to 5 wt% of the main sensing material. If the catalyst material exceeds the above range, the gas sensing sensitivity may be lowered. The effect may be insignificant. For example, when the SnO ₂ and ZnO are mixed, the sensing material 150 can mix SnO ₂ at a higher ratio than ZnO. For example, the molar ratio of SnO ₂ : ZnO is 1: 2.5 to 2.5: 1 , And the catalyst material can be doped with, for example, platinum (Pt) in the range of 1 wt% to 3 wt% of the main sensing material.

The sensing material 150 may have a round shape, an ellipse shape, a polygonal shape, or a polygonal shape with a curved corner. The width (X1, Y1) of the sensing material 150 in either the first direction or the second direction may be 3 mm or less. For example, when the sensing material 150 has a circular or elliptical shape, the diameter of the sensing material 150 may be 3 mm or less. The sensing area 150 may have a bottom area of 10 mm ² or less. The width (X1, Y1) of the sensing material 150 in any one direction may range from 0.5 mm to 3 mm. When the sensing material 150 is smaller than the above range, the resistance change is insignificant. When the sensing material 150 is larger than the above range, This may be insignificant. The sensing member 150 may be disposed in the center region of the electrode unit 152 or may cover the electrode unit 152 with a length longer than one direction of the line pattern of the electrode unit 152. The maximum thickness of the sensing material 150 may be more than the thickness of the electrode part 152. When the maximum thickness of the sensing material 150 is smaller than the thickness of the electrode part 152, the sensing sensitivity of the sensing material 150 may be insignificant.

The sensing member 150 may contact the surface of the electrode unit 152 to change the resistance. Here, as shown in FIG. 15, it can be seen that the resistance decreases with the passage of the gas sensing time. This resistance change can be detected to check the presence or absence of the gas.

<Electrode Structure of Sensor Unit>

The electrode structure of the sensor unit 105 according to the embodiment may include a pattern structure that contacts the sensing material 150 and detects a change in resistance from the sensing material 150. The electrode structure may include a plurality of pad portions 151 and 153 and an electrode portion 152 connected to the plurality of pad portions 151 and 153.

The plurality of pad portions 151 and 153 are pads for bonding wires and may be formed of a metal material such as Au, Pt, Pd, Al, Mo, A single layer or a multilayer structure may be formed using at least one of Ag, Ti, Tn, W, Ru, Ir, and Cu, And may be formed in multiple layers.

The plurality of pad portions 151 and 153 include first and second pad portions 151 and 153, and may be spaced apart from each other. The first and second pad portions 151 and 153 may be disposed on both sides of the sensing material 150 or on either side of the sensing material 150. The first and second pad portions 151 and 153 may be disposed on opposite sides of the sensing member 150. The thickness of the first and second pad portions 151 and 153 may be thicker than the thickness of the electrode portion 152 and the external impact may be alleviated when the wire is bonded. The first and second pad portions 151 and 153 may be electrically connected to each other.

The top view shape of the first pad portion 151 may include at least one of a circular shape, an elliptical shape, a polygonal shape, and a hemispherical shape. The second pad portion 153 may have the same shape as the first pad portion or may have another shape, and may include at least one of a shape, an ellipse shape, a polygonal shape, and a hemispherical shape.

The electrode unit 152 is a conductor connected to the plurality of pad units 151 and 153. The electrode unit 152 may be formed of gold, platinum Pt, tungsten W, zinc Zn, cobalt Co, palladium Pd, Aluminum, aluminum, molybdenum, silver, titanium, tin, zirconium, magnesium, iron, titanium nitride, W, Nb, Cr, Ru, Th, Pt, Rh, Cu, Sr, Th, Cr, At least one of Ru, Ir, Ni, Cr, Hg, Ar-Al, and Cu, Or may be formed as a single layer or multiple layers using different materials. Since the electrode unit 152 is exposed to the outside, it may include an oxidation preventing layer. The electrode unit 152 may include a material having a high specific resistance, for example, a specific resistance of 20 or more. The nichrome may have a resistivity of 108.3.

The electrode unit 152 may be connected between the plurality of pad units 151 and 153, for example, the first and second pad units 151 and 153. The electrode portions 152 may be disposed, for example, as extended electrodes connected in series. The elongated electrode may include a linear shape, a curved shape, a bent shape, and a line shape extending in different directions. The electrode unit 152 includes a plurality of line patterns 51 and 52 parallel to each other in the first direction and a connection pattern 53 connecting one or both ends of the plurality of line patterns 51 and 52 can do. The line patterns 51 and 52 may be defined as first and second line patterns 51 and 52 spaced apart by a predetermined distance D1. The line patterns 51 and 52 may be parallel or non- Lt; / RTI &gt; The first and second pad patterns 151 and 153 may be connected to each other by the electrode pattern 152 by connecting the first and second line patterns 51 and 52 at the different ends with the connection patterns 53. The electrode unit 152 may be formed in a continuous line pattern between the first and second pad units 151 and 153. The electrode unit 152 may be arranged in a single continuous line connected to the first and second pad units 151 and 153. The electrode unit 152 may be arranged between the first and second pad units 151 and 153 so as to overlap each other in the X-axis direction or the Y-axis direction on the horizontal plane.

The width W1 of the electrode part 152 may be at least 2 mu m or more, for example, 2 mu m to 5 mu m. If the width W1 is smaller than the above range, May be insignificant. The thickness T1 of the electrode part 152 may be in a range of 5 nm or more, for example, 5 nm to 1000 nm. The thickness T1 of the electrode part 152 may be smaller than the width W1 of the electrode part 152 and is not limited thereto.

The distance D1 between the line patterns 51 and 52 of the electrode unit 152 may be greater than the width W1 of the line patterns 51 and 52. [ The distance D1 between the line patterns 51 and 52 may be five times or more the width W1 of the line patterns 51 and 52. [ The distance D1 between the line patterns 51 and 52 of the electrode part 152 may be in the range of 50 탆 or more, for example, 50 탆 to 500 탆. If the distance is smaller than the above range, , The reaction rate may be lowered or eliminated. The distance D1 between the line patterns 51 and 52 of the electrode unit 152 may affect the sensing sensitivity of the sensing material 150.

The total length of the electrode unit 152 may be determined according to the length of the first and second line patterns 51 and 52 and the number of repetitions of the first and second line patterns 51 and 52. The number of times the line patterns 51 and 52 are bent may be four or more times. The number of times of bending is one in which the portion bent in the connecting pattern 53 in the first line pattern 51 and the portion bent in the second line pattern 52 in the connecting pattern 53 are each one circuit.

The electrode unit 152 can detect whether the gas is detected through the initial resistance applied to both ends of the electrode unit 152 and the change in the sensing resistance of the sensing unit 150. In order to provide such initial resistance, the electrode portion 152 may be provided over a predetermined length. The total length of the electrode unit 152 may be determined according to the length of the first and second line patterns 51 and 52 and the distance D1 between the first and second line patterns 51 and 52. The entire length of the electrode part 152 is an entire length and may have a range of 150 탆 or more, for example, 150 탆 to 15000 탆. The distance D2 between the first and second pad portions 151 and 153 may be in the range of 100 mu m or more, for example, 100 mu m to 12,000 mu m. The distance D2 between the first and second pad portions 151 and 153 may be smaller than the total length of the electrode portion 152. [ The length X1 of the sensing member 150 in the X-axis direction may be 50% or more of the distance D2 between the first and second pad portions 151 and 153.

The electrical resistance applied to both ends of the electrode portion 152 can be determined from (resistivity x length of material) / cross-sectional area. The resistance applied to both ends of the electrode unit 152 may be in the range of 10 Mohm to 1 Mohm, and if it is out of the range, the detection range of the integrated circuit (ASIC) may be exceeded. The resistance of the electrode portion 152 may vary depending on the thickness T1, the width W1, and the length of the line patterns 51 and 52. For example, when the material of the electrode part 152 is nichrome, the width of the line pattern of the electrode part 152 is 5 mu m, and the total length is 5 cm, the both end resistance of the electrode part 152 can be realized as 4Mohm have.

The first end portion 54 of the electrode portion 152 may be connected to the first pad portion 151 and the second end portion 55 may be connected to the second pad portion 153. The first end portion 54 extends from the first pad portion 151 in the direction of the line patterns 51 and 52 and the second end portion 55 extends from the second pad portion 153 in the direction of the line patterns 51 and 52, Lt; / RTI &gt; The extending direction of the first and second line patterns 51 and 52 of the electrode unit 152 is a Y axis direction and a direction orthogonal to the linear direction X connecting the first and second pad units 151 and 153 . The first and second end portions 54 and 55 may extend in the X-axis direction and may be connected to any one of the first and second line patterns 51 and 52. The length of the first and second line patterns 51 and 52 in the Y-axis direction may be greater than the length of the first and second pad portions 151 and 153 in the Y-axis direction.

As shown in FIG. 2, the sensing material 150 includes at least one first region R1 superimposed in a vertical direction with respect to different regions of the electrode unit 152, and at least one first region R1 overlapping the electrode unit 152 And may include one or more second regions R2. The first regions R1 may be spaced apart from one another and the second regions R2 may be spaced apart from one another. The sensing material 150 may have low resistance or conductivity due to incident light. The sensing member 150 may be disposed on the electrode unit 152. The second region R2 may be disposed between the neighboring line patterns 51 and 52 of the electrode unit 152. [ The first and second regions R1 and R2 may have a predetermined length and may be alternately arranged. A portion of the second region R2 may be equal to the interval D1 between the line patterns 51 and 52 of the electrode portion 152. [ The extending direction of the second region R2 is parallel to the extending direction of the line patterns 51 and 52 of the electrode portion 152. The second region R2 may extend in one direction with a long length, . The interval D1 between the first electrode portions 152 may be in a range of 50 mu m or more, for example, 50 mu m to 500 mu m. The resistance value for gas measurement can be determined according to the interval D1 between the electrode units 152. The closer the distance D1 between the electrode units 152 is, the lower the resistance value of the sensing material 150 have. Accordingly, the neighboring line patterns 51 and 52 of the electrode unit 152 can be electrically connected.

The sensing member 150 may be in contact with the electrode unit 152 in a region between the line patterns 51 and 52 of the electrode unit 152. Since the sensing material 150 has low resistance or conductivity due to light, it can electrically connect the line patterns 51 and 52 of the adjacent electrode units 152. The sensing material 150 may have a first resistance due to incident light and may be changed to a second resistance lower than the first resistance when an external gas is introduced. Accordingly, the sensing material 150 reduces the electrical resistance between the line patterns 51 and 52 of the electrode unit 152 by light and gas, and the electrode unit 152 The line patterns 51 and 52 can be electrically connected to each other. The electrode unit 152 is electrically connected by the sensing member 150 and the resistance between the electrode units 152 is lowered so that the resistance can be detected by the first and second pad units 151 and 152 . The change in the detected resistance can measure the presence or absence of gas by the semiconductor element.

A sensing material 150 may be disposed on the upper surface of the electrode part 152 and between the line patterns 51 and 52. The sensing material 150 may change the resistance of the electrode unit 152 when light and gas of a certain wavelength are input.

As another example, the electrode unit 152 may be a nano powder, a nano wire, a nano rod, a carbon nanotube (CNT), a graphene, or the like. But are not limited thereto.

The embodiment provides the electrode part 152 connected between the first and second pad parts 151 and 153 by the continuous line patterns 51 and 52 so that the initial resistance applied to the first and second pad parts 151 and 153 . A sensing material 150 responsive to light having an arbitrary wavelength may be disposed on the electrode unit 152 to change resistance applied to the electrode unit 152 to detect whether the gas is sensed. For example, when a resistance lower than the initial resistance applied to the first and second pad portions 151 and 153 is detected, the sensing can be performed in a gas sensing state. Accordingly, the sensor unit 105 according to the embodiment can provide the presence or absence of gas leakage by light having an arbitrary wavelength.

The embodiment can reduce the size and thickness of the sensor unit 105. That is, by implementing the sensor unit 105 using the light of the LED without the heater, it is possible to solve the problems such as the durability of the heater, the increase of the size by the heater, and the warm-up time .

3, electrons (e) are generated when the light L1 generated from the light emitting portion is irradiated to the sensor unit 105 according to the embodiment, and the sensing material 150 has the largest composition ratio in the atmosphere The first reaction with nitrogen or oxygen can take place. The nitrogen does not react with the sensing material 150 in the sensor unit 105 as an inert gas and oxygen is adsorbed on the surface of the sensing material 150 to form oxide ions such as O ^2- , O ₂ ^- and O ^- At this time, the oxide ions and the gas (G2) react with each other to move the electrons. At this time, a very large change in impedance, that is, a high sensitivity characteristic, may occur depending on the electron movement on the surface of the sensing material 150. That is, the sensing material 150 generates oxidized ions by the reaction between the electrons generated in response to the light L1 and oxygen, and the oxidized ions react with the gas to move electrons through the sensing material 150 . Electron transfer in the sensing member 150 may connect neighboring line patterns 51 and 52 of the electrode unit 152 to change the resistance of the electrode unit 152, The resistance change of the first pad 150 can be detected by the signal detection circuit through the first and second pad portions 151 and 153. [ The gas may include H ₂ , CO ₂ , CO, HCl, Cl ₂ , H ₂ S, H ₂ , HCN, and the like. The sensing material 150 may be a semiconductor ceramic material and may have an impedance value in the range of several hundreds of k [Omega] to several tens of M [Omega] through process and heat treatment.

The light L1 may be incident through the surface or / and the bottom surface of the sensing material 150. The light L1 may be light emitted from the light emitting portion. The light emitting unit may include an LED, and the LED may include at least one of ultraviolet light, visible light, and infrared light. The LED may comprise ultraviolet light. The sensing material 150 generates electrons on the surface of the sensing material 150 when the ultraviolet light L1 is irradiated. The ultraviolet wavelength may have a wavelength of 390 nm or less, for example, 200 nm to 390 nm. The wavelength of the ultraviolet light may be different depending on the band gap of the main sensing material. For example, in the case of SnO ₂ , the band gap may be about 3.6 eV. As shown in FIG. 22, when ultraviolet (UV) light is irradiated to the sensing material 150, it is understood that a current flows in the case of 254 nm or 365 nm. The embodiment can improve the reliability of the sensor unit 105 by providing the sensor unit 105 that generates electrons by using the light of the LED. Embodiments can solve the problem of durability of the heater and time required for warm-up by the heater by implementing the sensor unit 105 using the LED light without a heater.

15, when the ultraviolet light is irradiated to the sensing material 150 and the external nitric oxide (NO ₂ ) flows in, the initial resistance of the sensing electrode may be lowered according to the resistance change of the sensing material 150. It is possible to judge whether or not the gas is detected according to the rate of change in resistance. At this time, the level of the sensing sensitivity may become the initial resistance again when the light of a certain wavelength is turned off. The comparative example is a rate of change in resistance in a sensor portion having a heater.

4 is a first modification of the semiconductor device of FIG. The configuration shown in Fig. 4 will be described with reference to the constitution and the description selectively, and the different parts will be described.

Referring to FIG. 4, the sensor unit 105 includes first and second pad units 151 and 153, an electrode unit 152, and a sensing material 150 on an insulating layer 113.

The sensing member 150 may be provided to cover both the first and second line patterns 51 and 52 and the connection pattern 53 of the electrode unit 152. Since the sensing material 150 covers all of the patterns 51, 52 and 53, oxidation of the patterns 51, 52 and 53 of the electrode part 152 can be suppressed and the sensing sensitivity can be improved You can give.

For example, the length Y1 of the sensing material 150 in the Y-axis direction may be greater than the length of the line patterns 51 and 52 in the Y-axis direction. The length X1 of the sensing member 150 in the X-axis direction may be 80% or more of the distance D2 between the first and second pad portions 151 and 153. The length X1 of the sensing member 150 in the X-axis direction may be equal to or greater than the distance between the first and second ends 54,55.

5 is a second modification of the semiconductor device of FIG. The configuration shown in Fig. 5 will be described with reference to the configuration and the description, and the different portions will be described.

5, the sensor unit 105 includes first and second pad units 151 and 153, an electrode unit 152 and a sensing material 150 on an insulating layer 113.

The first and second pads 151 and 153 of the sensor unit 105 may be disposed on areas that do not face each other. The distance between the first and second pad units 151 and 153 may be set in a direction (Or length) of the substrate W. The sensing member 150 may have a bottom surface covering the line patterns 51 and 52 of the electrode unit 152 and may be disposed on the electrode unit 152.

The electrode unit 152 may include line patterns 51 and 52 arranged in the X axis direction and connection patterns 53 connecting both ends of the line patterns 51 and 52 at different positions. have. The line patterns 51 and 52 are arranged with a long length in the X-axis direction and can be spaced apart from each other in the Y-axis direction. Here, the Y-axis directions of the line patterns 51 and 52 may be spaced apart at regular intervals. The longitudinal direction X of the line patterns 51 and 52 of the electrode part 152 may be a direction orthogonal to the Y-axis direction. When the light and the gas of a certain wavelength are detected, the electrode 152 changes the initial resistance according to the resistance of the sensing material 150 and senses the presence or absence of the gas.

6 is a third modification of the semiconductor device of FIG. The configuration shown in Fig. 6 will be described with reference to the configuration and the explanation selectively, and the different portions will be described.

Referring to FIG. 6, the sensor unit 105 includes first and second pad units 151 and 153, an electrode unit 152, and a sensing material 150 on an insulating layer 113.

The electrode unit 152 may include a first line pattern 51 parallel to the X axis direction and a second line pattern 52 having a jiggag shape from the first line pattern 51. [ The second line patterns 52 may be bent at an angle of 1 degree or more, for example, 10 degrees to 80 degrees or less. The electrode unit 152 may be connected to two adjacent line patterns 51 and 52 having a triangular shape. The interval between the two line patterns 51 and 52 may become gradually narrower toward the intersection of the two line patterns. The spacing of these two line patterns 51 and 52 may become gradually narrower as they are away from the intersection of the two line patterns. The electrode unit 152 may be lowered in resistance, for example, lower than the initial resistance according to the resistance change in the sensing member 150, and the resistance change may be detected to detect whether the gas is sensed.

7 is an example of a semiconductor device according to the second embodiment. The semiconductor device according to the second embodiment is a configuration including the above-described semiconductor element and the light emitting portion. In describing the second embodiment, the same configuration as that described above will be described with reference to the above configuration, and different parts will be described. The above-described configuration can be selectively applied to or combined with the present embodiment.

Referring to FIG. 7, the semiconductor device includes a light emitting portion 101 and a sensor portion 105 on the light emitting portion 101. The semiconductor device may be embodied as a light emitting unit 101 having the sensor unit 105 or a sensor unit 105 having the light emitting unit 101. The semiconductor device may implement the sensor portion 105 in an overlapping region in the vertical direction Z with at least a part of the light emitting portion 101. The semiconductor device may include a light emitting portion 101 disposed on a first region of the substrate 111 and a sensor portion 105A disposed on the second region.

The sensor unit 105A includes first and second pad units 151 and 153, an electrode unit 152 and a sensing member 150 disposed on the electrode unit 152. The detailed configuration of the sensing unit 105A will be described with reference to the configuration of the above-described embodiment. The sensor unit 105A may be disposed so as to overlap with the substrate 111 in the vertical direction and may be spaced apart from the light emitting unit 101. [ The sensor unit 105A may be disposed adjacent to or facing at least one side surface of the light emitting unit 101. At least a part of the sensor unit 105A may be arranged to overlap with a part of the light emitting structure layer 120 of the light emitting unit in a horizontal direction of the X axis and / or the Y axis. When the sensing material 150 is activated by the light emitted from the light emitting part 101 and the external gas is introduced into the sensor part 105A, the resistance of the electrode part 152 is changed by the sensing material 150 It is possible to detect presence or absence of gas detection.

The light emitting unit 101 according to the embodiment may be implemented by at least one of a horizontal chip structure, a vertical chip structure, and a flip chip structure, but is not limited thereto. The light emitting portion 101 may include, for example, a light emitting element. The light emitting device includes a light emitting diode (LED), and the LED may emit at least one of ultraviolet light, visible light, and infrared light. The light emitting unit 101 according to the embodiment can emit light having a wavelength of ultraviolet light. The distance between the light emitting portion 101 and the sensor portion 105 in the semiconductor device according to the embodiment may be less than or equal to twice the thickness of the light emitting portion 101,

The size of the semiconductor device may be in the range of, for example, 300 mu m to 30000 mu m x 300 mu m to 30000 mu m in width and length. The thickness or the height of the semiconductor device may have a range of 500 탆 or less, for example, 30 탆 to 500 탆. The first axis direction on the plane may be a transverse direction or an X axis direction, and the second axis direction may be a longitudinal direction or a Y axis direction orthogonal to the X axis direction. The third axis direction may be a height or a thickness direction, or may be a Z axis direction orthogonal to the first and second axis directions.

<Light Emitting Part 101>

The light emitting portion 101 includes a light emitting structure layer 120 having a first conductivity type semiconductor layer 121, an active layer 123, and a second conductivity type semiconductor layer 125. The light emitting portion 101 may include a first electrode 141 connected to the first conductivity type semiconductor layer 121 and a second electrode 143 connected to the second conductivity type semiconductor layer 125 have. The light emitting unit 101 may include a substrate 111. The light emitting structure layer 120 may be disposed on the substrate 111. The substrate 111 may be a part of the semiconductor device or a part of the light emitting unit 101 and / or the sensor unit 105A.

The light emitting unit 101 may be disposed in a region that does not overlap the sensor unit 105A in the vertical direction. The light emitting unit 101 may be disposed on the substrate 111 in a region different from the sensor unit 105A. A part of the light generated from the light emitting unit 101 may travel in the direction of the sensing material 150.

&Lt; Substrate (111) >

The substrate 111 may be a conductive or insulating material. The substrate 111 may be a semiconductor material. The substrate 111 may be a light-transmitting or non-light-transmitting material. The substrate 111 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ and GaAs. The substrate 111 may be formed of a GaN-based semiconductor, for example, a GaN semiconductor. The substrate 111 may be a bulk GaN single crystal substrate. The substrate 111 may be used as a support member for supporting semiconductor devices.

The substrate 111 may include a plurality of protrusions (not shown) protruding toward the light emitting structure layer 120. The protrusions may be formed of a material of the substrate 111, . The side surface of the projection may have a hemispherical shape or a polygonal shape. The projections can change the critical angle of the incident light to improve the light extraction efficiency.

The thickness of the substrate 111 may be in the range of 30 占 퐉 or more, for example, 30 占 퐉 to 300 占 퐉. If the thickness of the substrate 111 is smaller than the thickness of the range, handling during manufacture may be difficult. . The length of the substrate 111 in the first axis X direction and the length in the second axis Y direction may be the same or different. For example, the length of the substrate 111 in the X-axis direction may be greater than the length in the Y-axis direction. The substrate 111 may be separated from the light emitting portion 101 and removed. The semiconductor device may be provided with the substrate 111 removed or without a substrate.

A semiconductor layer having at least one of group III-V compound semiconductors and group II-VII compound semiconductors may be formed on the substrate 111. The semiconductor layer may have a plurality of layers stacked. The growth equipment of the compound semiconductor layer may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD), a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, or the like, but the present invention is not limited thereto. The substrate on which the semiconductor layer is grown may be a growth substrate or a light-transmitting substrate, and the substrate separately attached to the semiconductor layer may be a conductive or non-conductive substrate or a light-transmitting or non-light-transmitting material.

In the embodiment, a reflective layer may be further disposed under the substrate 111 to reflect light traveling toward the substrate to the sensor unit 105. As another example, the substrate 111 may be disposed on the lower surface of the substrate 111 and / or the concavo-convex structure of the reflective layer to improve the light reflection efficiency.

<Light-emitting structure layer 120>

The light emitting structure layer 120 may include a compound semiconductor of group II to VI elements, for example, group II and group V compound semiconductors, or group III and group V compound semiconductors. The light emitting structure layer 120 may be disposed on the substrate 111. The lower surface of the light emitting structure layer 120 may face or face the substrate 111. Other semiconductor layers may be further disposed between the light emitting structure layer 120 and the substrate 111, but the present invention is not limited thereto. The light emitting structure layer 120 may include a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125.

The first conductive semiconductor layer 121 may be disposed on the substrate 111. The first conductive semiconductor layer 121 includes a first conductivity type dopant and includes n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 121 includes a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? The first conductive semiconductor layer 121 may be a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductive semiconductor layer 121 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. The first conductive semiconductor layer 121 may have a superlattice structure in which at least two different layers are alternately arranged. The first conductive semiconductor layer 121 may be an electrode contact layer. The first conductive semiconductor layer 121 may have a partially opened region. The open region may be a region where the active layer 123 and the second conductivity type semiconductor layer 125 are removed in the vertical direction Z. [ The first electrode 141 may be connected to the first conductive semiconductor layer 121 through the open region.

The active layer 123 may be disposed on the first conductive semiconductor layer 121. The active layer 123 may be disposed between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 125. The active layer 123 selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. The active layer 123 includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1-xy} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y Ga _{1 -xy} N (0? x? 1, 0? y? 1, 0? x + y? 1). InGaN / InGaN, InGaN / InGaN, InAlGaN / InAlGaN, AlGaN / AlGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaN, InGaN / InGaN, InGaN / InGaN, , InP / GaAs pairs. The period of the well layer / barrier layer may be formed of two or more cycles of the pairs, and the barrier layer may be formed of a semiconductor material having a band gap wider than the band gap of the well layer. The active layer 123 may selectively emit light within a wavelength range from ultraviolet rays to visible rays, and may emit light having a peak wavelength of ultraviolet light or light having a peak wavelength of blue light, but the present invention is not limited thereto.

The second conductive semiconductor layer 125 may be disposed on the active layer 123 and may include a semiconductor doped with a dopant of the second conductivity type. The second conductivity type semiconductor layer 125 includes a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . The second conductive semiconductor layer 125 may include at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductive semiconductor layer 125 may be a p-type semiconductor layer, and the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants. The second conductive semiconductor layer 125 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. The second conductive semiconductor layer 125 may have a superlattice structure in which at least two different layers are alternately arranged. The second conductive semiconductor layer 125 may be an electrode contact layer.

As another example of the light emitting structure layer 120, the first conductivity type semiconductor layer 121 may be a p-type semiconductor, and the second conductivity type semiconductor layer 125 may be an n-type semiconductor. The light emitting structure layer 120 may include at least one of a p-n junction, an n-p junction, an n-p-n junction, and a p-n-p junction structure according to a junction type. P is a p-type semiconductor layer, n is an n-type semiconductor layer, the np junction or pn junction has an active layer, and the npn junction or the pnp junction may have at least one active layer between np and pn .

The light emitting structure layer 120 may further include other layers above and / or below the layers, but the present invention is not limited thereto. The upper surface area of the light emitting structure layer 120 may be narrower than the lower surface area. The area of the bottom surface of the light emitting structure layer 120 may be equal to or less than the area of the top surface of the substrate 111. Here, the area may be an area formed by the X-axis and Y-axis planes. The side surfaces of the light emitting structure layer 120 may be formed as inclined surfaces with respect to the vertical axial direction Z, and such inclined surfaces may improve light extraction efficiency.

<Electrode Structure of Light-Emitting Portion>

The electrode structure of the light emitting portion 101 according to the embodiment may include first and second electrodes 141 and 143. The electrode structure of the light emitting unit 101 may further include a conductive layer 131. The first electrode 141 may be electrically connected to the first conductive semiconductor layer 121. The first electrode 141 may be implemented as a pad. The first electrode 141 may be disposed on a portion of the first conductive semiconductor layer 121. The first electrode 141 may be disposed in a region lower than the second electrode 143 and face the side surface of the active layer 123. The first electrode 141 may be formed of one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, (Ag), aluminum (Al), phosphorus (P), or a selective alloy thereof, and may be formed as a single layer or a multilayer.

The second electrode 143 may be disposed on the second conductive semiconductor layer 125. The second electrode 143 may be electrically connected to at least one of the conductive layer 131 and the second conductive type semiconductor layer 125. The second electrode 143 may be implemented as a pad. The second electrode 143 may be formed of at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, May be formed of at least one of silver (Ag), aluminum (Al) and phosphorus (P), or a selective alloy thereof, and may be formed as a single layer or a multilayer.

The conductive layer 131 may be disposed on the light emitting structure layer 120. The conductive layer 131 is formed in a region between the second conductive type semiconductor layer 125 and the second electrode 143 and a region between the first conductive type semiconductor layer 121 and the first electrode 141 At least one or both. The conductive layer 131 may be disposed on the second conductive semiconductor layer 125 and may be electrically connected to the second conductive semiconductor layer 125 and the second electrode 143.

The conductive layer 131 may be a transparent layer or a reflective layer. The conductive layer 131 may include at least one of a metal, a non-metal, and a semiconductor. The conductive layer 131 may be formed of a metal or an alloy including at least one of metals such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Or may be formed as a single layer or multiple layers. The conductive layer 131 may include at least one of a non-metal such as a metal oxide or a metal nitride. The metal oxide or the metal nitride may be at least one selected from the group consisting of ITO (indium tin oxide), ITO nitride, IZO (indium zinc oxide), IZON nitride, IZTO (indium zinc oxide), IAZO at least one of materials such as indium gallium zinc oxide, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, . The conductive layer 131 may be removed from the light emitting portion 101. When the conductive layer 131 is made of a metal, it may be formed to have a thickness of 10 nm or less, for example, 1 nm to 5 nm, for light transmission. As another example, the conductive layer 131 may be removed, and in this case, the second electrode 143 may be in contact with the upper surface of the multi-layered second conductive type semiconductor layer 125. The conductive layer 131 may be formed of an AlGaN-based semiconductor to reduce ohmic contact and reduce light absorption loss, but the present invention is not limited thereto.

&Lt; Sensor unit 105A >

The sensor unit 105A may include the configuration of the sensor unit disclosed in Figs. The sensor unit 105A includes first and second pad units 151 and 153, an electrode unit 152 and a sensing material 150. The sensor unit 105A may be disposed on the insulating layer 113 or may include an insulating layer 113. [

The insulating layer 113 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The insulating layer 113 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, or MgO.

The insulating layer 113 may be disposed between the electrode part 152 and the sensing material 150 and the semiconductor layer or the substrate 111. The insulating layer 113 may be disposed on the semiconductor layer 122. The semiconductor layer 122 may be the first conductive semiconductor layer, a buffer layer, or an unintentional doped semiconductor. The semiconductor layer 122 may be equal to or thinner than the thickness of the first conductive semiconductor layer.

The sensor unit 105A may be disposed on the substrate 111. [ The substrate 111 may extend under the sensor unit 105A. Accordingly, the light emitting portion 101 may be disposed on the first region of the substrate 111, and the sensor portion 105A may be disposed on the second region. The sensor unit 105A may be integrally formed with the light emitting unit 101 or may be disposed separately. The sensor unit 105A may be disposed adjacent to at least one side surface of the light emitting unit 101. [ The sensing member 150 of the sensor unit 105A can be disposed in a region corresponding to the side surface of the active layer 123 of the light emitting unit, and the incident efficiency of light can be improved.

The light emitting portion 101 according to the embodiment may emit ultraviolet light, visible light or infrared light, and may emit ultraviolet light, for example. The light emitting unit 101 may include various electronic devices such as an LED and a light receiving device. The LED and the light receiving device may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The light emitting portion 101 according to the present embodiment may be an LED.

The light emitting unit 101 may emit light when power is supplied to the first and second electrodes 141 and 143. The light emitted through the upper surface, the lower surface and the side surfaces of the light emitting portion 101 may be irradiated to the sensing material 150 of the adjacent sensor portion 105A. The first and second pad portions 151 and 153 may detect a resistance change of the sensing material 150 through the electrode portion 152 when light is emitted from the light emitting portion 101 and an external gas is sensed. The operation of the sensor unit will be described with reference to the above description.

A groove 108 may be disposed between the sensor portion 105A and the light emitting portion 101. An insulating layer 113 may extend into the groove 108 to separate the semiconductor element 101 from the semiconductor element 101 .

The sensing material 150 may be formed of a metal oxide material. The sensing material 150 may include a main sensing material and a catalyst. The main sensing material comprises a metal oxide material, and the catalyst may comprise a metal. The main sensing material may be selected from the group consisting of SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , ₂ O ₄ , &Lt; / RTI &gt; and the like. The catalyst of the sensing material 150 may be at least one selected from the group consisting of Pt, Cu, Rh, Au, Pd, Fe, Ti, (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir) Such a catalyst material may be mixed with the primary sensing material as a doping material in the sensing material 150. [ The sensing material 150 may include materials that may have both sensing and catalytic properties. The material of the sensing material 150 according to the embodiment may be selectively mixed with the main sensing material and the catalyst according to the type of gas to be sensed. The detection by the sensor unit 105 may mean not only the presence or absence of the measurement gas, but also the change in the concentration of the measurement gas.

The sensing member 150 may be in contact with the surface of the electrode unit 152 to change the resistance. The sensing material 150 may mix one or two or more kinds of main sensing materials, and the mixed material may be doped with one or two kinds of catalyst materials. The catalyst material may be added in an amount of 5 wt% or less, for example, 1 wt% to 5 wt% of the main sensing material, and the gas sensing sensitivity may be lowered when the catalyst material exceeds the above range. For example, when the SnO ₂ and ZnO are mixed, the sensing material 150 can mix SnO ₂ at a higher ratio than ZnO. For example, the molar ratio of SnO ₂ : ZnO is 1: 2.5 to 2.5: 1 , And the catalyst material can be doped with, for example, platinum (Pt) in the range of 1 wt% to 3 wt% of the main sensing material. Here, since SnO ₂ has a band gap of about 3.6 eV, photo current can be formed when the light emitted from the light emitting portion 101 is 340 nm. The particle size of the main sensing material is in the range of 30 nm or more, for example, 30 nm to 60 nm. If the particle size is small, the characteristics may be improved, but there is a problem of cost increase. When the particle size is larger than the above range, Problems that can not be made in the public (oxygen vacancy) can arise.

6 is a modification of the semiconductor device of FIG.

Referring to FIG. 6, a reflection plate 160 may be disposed on the semiconductor element of FIG. The reflection plate 160 may include at least one of a metal material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf.

The reflection plate 160 may be disposed on the light emitting portion 101. The reflection plate 160 may be spaced apart from the light emitting unit 101 and may reflect light emitted from the light emitting unit 101. For example, ultraviolet light can be reflected. The reflection plate 160 may have an opening 162 therein, and the opening 162 may be an opening through which the gas according to the embodiment is introduced. The opening 162 may have a minimum size so that the light emitted from the light emitting portion 101 is not leaked to the outside. The openings 162 may include at least one or more than two openings 162, and may be partially overlapped with the sensing material 150.

A side wall for preventing light leakage may be disposed around the outer circumference of the light emitting unit 101 and the sensor unit 105A. A circuit board for power supply may be disposed below the semiconductor device 101 and the sensor unit 105A.

9 is a perspective view showing the semiconductor device according to the third embodiment. In describing the third embodiment, it is a configuration including the above-described semiconductor element and the light emitting portion. In describing the third embodiment, the same configuration as that described above will be described with reference to the above configuration, and different parts will be described. The above-described configuration can be selectively applied to or combined with the present embodiment.

9, the semiconductor device 100 may include a light emitting portion 101 and the above-described sensor portion 105 on the light emitting portion 101. [ The sensor unit 105 may include first and second pad units 151 and 153, an electrode unit 152, and a sensing material 150.

An insulating layer 113 may be disposed between the sensor unit 105 and the light emitting unit 101. The insulating layer 113 may be disposed between the sensing material 150 and the conductive layer 131. The insulating layer 113 may be disposed between the electrode unit 152 and the light emitting structure layer 120 or the conductive layer 131. The insulating layer 113 may electrically isolate the sensor unit 105 from the light emitting unit 101.

The embodiment may be arranged such that a part or all of the configuration of the sensor unit 105 overlaps with at least a part of the light emitting unit 101 in the vertical direction. The embodiment may be arranged such that a part or all of the configuration of the sensor unit 105 overlaps at least a part of the light emitting structure layer 120 in the vertical direction. The sensing material 150 may be disposed to overlap with at least one of the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 125 in a vertical direction. The sensing material 150 may be arranged to overlap with the active layer 123 in the vertical direction. The first and second pad portions 151 and 153 and the electrode portion 152 may be vertically overlapped with at least one of the first conductive semiconductor layer 121 and the second conductive semiconductor layer 125. The first and second pad portions 151 and 153 and the electrode portion 152 may be arranged to overlap with the active layer 123 in the vertical direction.

2, the sensing member 150 includes a plurality of first regions R1 that are vertically overlapped with different regions of the electrode unit 152, and a plurality of first regions R1, (111) or a second region (R2) protruding in the bottom direction. The electrode portions 152 may be a single line pattern connected in series.

The sensing material 150 may be disposed above the active layer 123 to improve the incident efficiency of light emitted through the active layer 123. The layers between the sensing material 150 and the active layer 123 may be formed of a material that transmits light emitted through the active layer 123. The sensing material 150 may be disposed separately from the surface of at least one layer of the light emitting structure layer 120 to prevent electrical interference.

The sensing material 150 may be formed of a metal oxide material. The sensing material 150 may include a main sensing material and a catalyst. The main sensing material comprises a metal oxide material, and the catalyst may comprise a metal. The main sensing material may be selected from the group consisting of SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , ₂ O ₄ , &Lt; / RTI &gt; and the like. The catalyst of the sensing material 150 may be at least one selected from the group consisting of Pt, Cu, Rh, Au, Pd, Fe, Ti, (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir) Such a catalyst material may be mixed with the primary sensing material as a doping material in the sensing material 150. [ The sensing material 150 may include materials that may have both sensing and catalytic properties. The material of the sensing material 150 according to the embodiment may be selectively mixed with the main sensing material and the catalyst according to the type of gas to be sensed. The detection by the sensor unit 105 may mean not only the presence or absence of the measurement gas, but also the change in the concentration of the measurement gas.

The sensing member 150 may be in contact with the surface of the electrode unit 152 to change the resistance. The sensing material 150 may mix one or two or more kinds of main sensing materials, and the mixed material may be doped with one or two kinds of catalyst materials. The catalyst material may be added in an amount of 5 wt% or less, for example, 1 wt% to 5 wt% of the main sensing material, and the gas sensing sensitivity may be lowered when the catalyst material exceeds the above range. For example, when the SnO ₂ and ZnO are mixed, the sensing material 150 can mix SnO ₂ at a higher ratio than ZnO. For example, the molar ratio of SnO ₂ : ZnO is 1: 2.5 to 2.5: 1 , And the catalyst material can be doped with, for example, platinum (Pt) in the range of 1 wt% to 3 wt% of the main sensing material. Here, since SnO ₂ has a band gap of about 3.6 eV, photo current can be formed when the light emitted from the light emitting portion 101 is 340 nm. The particle size of the main sensing material is in the range of 30 nm or more, for example, 30 nm to 60 nm. If the particle size is small, the characteristics may be improved, but there is a problem of cost increase. When the particle size is larger than the above range, Problems that can not be made in the public (oxygen vacancy) can arise.

1) of the electrode part 152 has a long length in one direction, and the length direction of the line pattern is a virtual straight line connecting the first and second electrodes 141 and 143 of the light emitting part. For example, the X-axis direction. The line patterns of the electrode unit 152 may be continuously connected with a predetermined interval in the Y-axis direction. As another example, the longitudinal direction of the line patterns of the electrode unit 152 in the sensor unit 105 may be arranged in a direction orthogonal to the direction of the virtual straight line connecting the first and second electrodes 141 and 143. 1 to 6 may be selectively applied to the structures of the first and second pad portions 151 and 153, the sensing material 150 and the electrode portion 152 of the sensor unit 105 according to the embodiment. It is not limited.

The sensor unit 105 according to the embodiment may be disposed to correspond to at least one of the upper surface and the side surface of the light emitting unit 101 as shown in FIGS. 4 and 9 for emitting light. For example, the sensing material 150 of the sensor unit 105 may correspond to or face at least one of the upper surface and the side surface of the light emitting unit 101. The sensing material 150 may be a region exposed to the light emitted from the light emitting portion 101.

The sensor unit 105 may be disposed on a region overlapping the light emitting structure layer 120 in the vertical direction. Accordingly, the efficiency of incidence of the light emitted from the light emitting unit 101 can be improved.

Since the sensor unit 105 is disposed on the light emitting structure layer 120, the light emitting area of the active layer 123 may not be reduced or the light emitting area may be increased.

Since the sensor unit 105 is disposed on the light emitting structure layer 120, the sensing sensitivity of the external gas can be improved.

Since the sensor unit 105 is disposed on the light emitting structure layer 120, the sensing device having the semiconductor device can be downsized.

As another example, the substrate 111 of the light emitting portion 101 may be a conductive substrate. In this case, the first electrode 141 may not be formed separately. As another example, a reflection layer may be further disposed under the substrate 111 of the light emitting portion 101 to improve the light output efficiency.

10 is a view showing a semiconductor device according to the third embodiment. In describing the third embodiment, the same configuration as that of the above-described embodiment refers to the configuration of the above embodiment, and the configuration disclosed above can be selectively applied to this embodiment.

Referring to FIG. 10, the semiconductor device may include a light emitting portion 101C and a sensor portion 105 on the light emitting portion 101C. The insulating layer 113 may be disposed between the light emitting portion 101C and the sensor portion 105. [

The light emitting portion 101C may include a light emitting structure layer 120 and the light emitting structure layer 120 may have a concave and convex structure 121B. The branch electrode 141C of the first electrode 141 may extend in a part of the uneven structure 121B, but the present invention is not limited thereto. The branch electrode 141C may be a transparent conductive layer or a metal material.

The sensor unit 105 is disposed on the light emitting unit 101C. The insulating layer 113 may be disposed between the light emitting portion 101C and the sensor portion 105. [ The insulating layer 113 may extend from the upper surface of the light emitting portion 101C to a side surface of the light emitting structure layer 120. [

The sensor unit 105 may include the first and second pad units 151 and 153 and the electrode unit 152 and the sensing member 150. The detailed structure of the sensor unit 105 will be described with reference to the above- do. The first and second pad portions 151 and 153 and the electrode portion 152 may be disposed on the light emitting structure layer 120. The sensing member 150 may be in contact with the electrode unit 152. The lower surface of the sensing member 150 and the electrode unit 152 may have a concavo-convex shape along the concave-convex structure 121B. Since the surface area of the electrode part 152 is large, the contact area with the sensing material 150 can be increased. Accordingly, the length and width of the electrode unit 152 can be reduced.

2, the sensing member 150 includes a plurality of first regions R1 that are vertically overlapped with different regions of the electrode unit 152, and a plurality of first regions R1, (111) or a second region (R2) protruding in the bottom direction. The electrode portions 152 may be a single line pattern connected in series.

The light emitting portion 101C includes a first electrode 141B on the first conductive type semiconductor layer 121 and a second electrode 143B having a plurality of conductive layers 146, 147, 148, and 149 below the second conductive type semiconductor layer 125 . The position of the first electrode 141B may be selectively applied in the above-described embodiment.

The second electrode 143B is disposed under the second conductive semiconductor layer 125 and includes a contact layer 146, a reflective layer 147, a bonding layer 148, and a support member 149. The contact layer 146 is in contact with the semiconductor layer, for example, the second conductivity type semiconductor layer 125. The contact layer 146 may be a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or may be a metal of Ni or Ag. A reflective layer 147 is disposed under the contact layer 146 and the reflective layer 147 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, And at least one layer made of a material selected from the group. The reflective layer 147 may be in contact with the second conductive semiconductor layer 125, but the present invention is not limited thereto.

The bonding layer 148 may be a barrier metal or a bonding metal. The material may be, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A protective layer 183 and a current blocking layer 185 are disposed between the second conductive semiconductor layer 125 and the second electrode. The insulating layer 113 may extend to the upper surface of the outer side of the protective layer 183. The passivation layer 183 may be formed along the bottom edge of the second conductive semiconductor layer 125 and may be formed in a ring shape, a loop shape, or a frame shape having an open area. The protective layer 183 includes a transparent conductive material or an insulating material, such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , and TiO ₂ . The inner side of the passivation layer 163 is disposed below the second conductive semiconductor layer 125 and the outer side of the passivation layer 163 is located further outward than the side surface of the light emitting structure layer 120. The current blocking layer 185 may be disposed between the second conductive semiconductor layer 125 and the contact layer 146 or / and the reflective layer 147. The current blocking layer 185 may include an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ As shown in FIG. As another example, the current blocking layer 185 may also be formed of a metal for Schottky contact. The current blocking layer 185 is disposed to overlap the first electrode 181 disposed on the light emitting structure layer 120 and the light emitting structure layer 120 in the thickness direction. The current blocking layer 185 may diffuse the current supplied from the second electrode 170 to another path. The current blocking layers 185 may be arranged in one or plural regions, and at least a part or all regions may be overlapped with the first electrode 141B in the vertical direction.

A support member 149 is formed under the bonding layer 148 and the support member 149 may be formed of a conductive material such as copper-copper, gold-gold, nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and carrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC and the like). As another example, the support member 149 may be embodied as a conductive sheet. Here, the substrate of FIG. 1 may be removed. The substrate may be removed by a physical method such as laser lift off or chemical method such as wet etching to expose the first conductivity type semiconductor layer 121. The first electrode 141B is formed on the first conductive type semiconductor layer 121 by performing the isolation etching through the direction in which the substrate is removed.

When the sensor unit 105 is applied to the vertical type light emitting unit, the amount of light incident on the sensing member 150 can be maximized, and the gas contact area in the sensing member 150 can be maximized. In addition, the heat dissipation efficiency can be maximized by the vertical chip structure.

The sensor unit according to the embodiment may be disposed in a region that does not overlap the light emitting structure layer 120 in the vertical direction, thereby reducing light loss. In this case, the surface area of the sensing member 150 of the sensor unit 105 can be further increased.

Fig. 11 shows a configuration of a fourth embodiment in which a sensor section 105 is arranged on a light-emitting section having a flip chip structure.

Referring to FIG. 11, the substrate 111 is disposed on the light emitting structure layer 120 in the light emitting portion 101D. The substrate 111 may be an insulating material, a semiconductor material, or a transparent material. The substrate 111 may include a material through which light emitted from the light emitting structure layer 120 is transmitted. The substrate 111 may have a concave-convex structure 111B on its top surface, or a lens shape having a flat surface or a curvature may be disposed on at least one or more surfaces.

The sensor unit 105 is disposed on a substrate 111 made of an insulating material. In this case, the insulating layer 113 shown in Fig. 2 can be removed. The sensor unit 105 may include the first and second pad units 151 and 153, the electrode unit 152 and the sensing material 150 described in the embodiment. .

The sensing member 150 of the sensor unit 150 may be disposed on the substrate 111. The lower surfaces of the first and second pad portions 151 and 153 and the electrode portion 152 may be arranged along the concavo-convex structure 111B of the substrate 111 as an uneven surface. The line pattern of the electrode unit 152 may extend along the concavo-convex structure 111B of the upper surface of the substrate 111 with a concave-convex shape. Since the surface area of the electrode part 152 is large, the contact area with the sensing material 150 can be increased.

The light emitting structure layer 120 may include a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125 under the substrate 111. A protective layer 133 may be disposed under the light emitting structure layer 120. The passivation layer 133 may be formed of an insulating material. The first electrode 141 may be disposed below the first conductive semiconductor layer 121. The second electrode 143 may be disposed under the second conductive semiconductor layer 125 and may be electrically connected.

A conductive layer 114 may be disposed between the second conductive semiconductor layer 125 and the passivation layer 133. The conductive layer 114 may be formed of a reflective metal. The conductive layer may include at least one of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Cr, have. The conductive layer 114 may be formed of a transparent material layer and a reflective material layer. The conductive layer 114 may be connected to the second electrode 143. The second electrodes 143 may be arranged in one or more than one.

In such a flip chip structure, the first and second electrodes 141 and 143 of the light emitting portion 101D and the first and second pad portions 151 and 153 of the sensor portion 105 can be separated. The first and second electrodes 141 and 143 may be disposed below the light emitting portion 101D and the first and second pad portions 151 and 153 may be disposed above the light emitting portion 101D. The sensing material 150 may be applied to the entire surface of the substrate 111, thereby increasing the surface area of the sensing material 150.

12 is a first modification of the sensing device having the semiconductor element according to the embodiment. In describing Fig. 12, the configuration disclosed above will be referred to the above description, and it is selectively applicable in this example.

12, the gas sensing device includes a circuit board 170, a sensor unit 105 on the circuit board 170, a light emitting unit 101A on the circuit board 170, a sensor unit 105, A package body 155 that surrounds the light emitting unit 101A, and a reflection plate 160 on the package body 155. Although the sensor unit 105 and the light emitting unit 101A are described as being separated from each other, the light emitting unit and the semiconductor device separated from the light emitting unit shown in FIGS. 7 to 11 are not limited thereto.

The circuit board 170 may include at least one of a resin PCB, a metal core PCB (MCPCB) having a metal core, and a flexible PCB (FPCB), but the present invention is not limited thereto. The circuit board 170 may include a ceramic material.

The package body 155 may be made of a ceramic material. The package body 155 may be formed of the same ceramic material as the circuit board 170. The circuit board 170 may include a plurality of circuit patterns (not shown) on an upper surface thereof, and the plurality of circuit patterns may be electrically connected to the sensor unit 105 and the light emitting unit 101. The circuit pattern may be connected to the pads 151 and 153 of the sensor unit 105 through wires or other conductive members. The circuit pattern may be connected to the electrodes of the semiconductor element through a wire or may be directly bonded.

The sensor unit 105 and the light emitting unit 101 may be disposed inside the package body 155. A reflective plate 160 is disposed on the package body 155, and the reflective plate 160 reflects light to prevent leakage of light. The inside of the package body 155 may be formed with a cavity structure or a concave recess structure. A stepped structure is disposed around the upper portion of the package body 155, and the reflective plate 160 can be tightly coupled to the stepped structure. The reflection plate 160 may be in contact with the package body 155 with an adhesive (not shown).

The sensor unit 105 can detect gas exposure by the light emitted from the light emitting unit 101A and the gas introduced through the opening 162 of the reflection plate 160, for example, a harmful gas.

Although the light emitting unit 101A and the sensor unit 105 are separately disposed on the circuit board 170, the light emitting unit 101 may be disposed on the substrate of the semiconductor device so as to be integrally disposed.

13 is another example of a sensing apparatus having a semiconductor element according to the embodiment, in which the semiconductor element of Fig. 9 is arranged. In explaining FIG. 13, the above-described configuration will be referred to the above description, and it is selectively applicable in this example. The semiconductor device of the sensing device of Fig. 13 will be described as an example of the sensor unit of Fig.

13, the sensing apparatus includes a circuit board 170, a semiconductor element 100 having a light emitting portion 101 and a sensor portion 105 on the circuit board 170, And a reflection plate 160 disposed on the semiconductor device 100 and disposed on the package body 360. The package body 155 may be formed of a semiconductor material.

The light emitting portion 101 may be disposed on a first region of the substrate 111 and the sensor portion 105 may be disposed on a second region of the substrate 111. [ The light emitting unit 101 may be disposed between the sensor unit 105 and the circuit board 170.

The package body 155 may be made of a ceramic material. The package body 155 may be formed of the same ceramic material as the body of the circuit board 170. Such a ceramic material can effectively reflect the light emitted from the light emitting portion 101. The interior of the package body 155 has a cavity 365 or a recessed structure, and the sensor unit 105 and the light emitting unit 101 may be disposed. A reflective plate 160 is disposed on the package body 155, and the reflective plate 160 reflects light to prevent leakage of light. A stepped structure is disposed around the upper portion of the package body 155, and the reflective plate 160 can be tightly coupled to the stepped structure. The reflection plate 160 may be in contact with the package body 155 with an adhesive (not shown). The sensor unit 105 can sense gas exposure by the light irradiated from the light emitting unit 101 and the gas introduced through the opening 162 of the reflection plate 155, for example, a harmful gas. The light emitting unit 101 and the sensor unit 105 are disposed on the circuit board 170 in a superimposed manner, and the configuration of another embodiment described above can be selectively applied.

One of the first and second pads 151 and 153 of the sensor unit may be commonly connected to one of the first and second electrodes of the light emitting unit. For example, the first pad unit and the first electrode may be connected in common, It is not limited thereto. 7, 10 and 11 can be applied to the semiconductor device, but the present invention is not limited thereto.

14 is a block diagram of a sensing system having a semiconductor device according to an embodiment.

14, the resistance change sensed by the semiconductor element 100 is detected by the signal processing circuit 171, and the signal processing circuit 171 detects the gas through the resistance change due to the inflow of the gas do. When the gas is detected, the signal processing circuit 171 can transmit the signal through the transmission module 175 by wire or wirelessly, or through the output module 177 through the alarm or display mode. The control unit 173 may be disposed in such a system. The control unit 173 can control the output or transmission of the signal processing circuit 171.

The semiconductor device or sensing device according to the embodiment can be applied to a place where a gas such as various kinds of toxic gas or explosive gas is generated, or to a space where the device is applied to a moving device such as a vehicle or an enclosed space. Or to indoor or outdoor sensing devices.

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

101, 101A, 101C, 101D:
105, 105A, 100:
111: substrate
120: light emitting structure layer
131: Conductive layer
113: insulating layer
141: first electrode
143: Second electrode
150: Detecting material
151, 153:
152:

Claims (16)

Board;
A light emitting portion disposed on the substrate; And
And a sensor portion disposed on at least one of the substrate and the light emitting portion,
An active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductivity type semiconductor layer,
The sensor unit includes a first pad unit, a second pad unit spaced apart from the first pad unit, an electrode unit extending from the first pad unit and connected to the second pad unit, / RTI &gt;
Wherein the sensing member includes at least one first region overlapping the electrode portion in the vertical direction and at least one second region that is not overlapped with the electrode portion in the vertical direction,
Wherein a surface of the sensing material corresponds to at least one of an upper surface and a side surface of the light emitting portion,
Wherein the sensing material changes its resistance by light emitted from the light emitting unit. The semiconductor device according to claim 1, wherein the first region and the second region of the sensing material are alternately arranged. The semiconductor device according to claim 1, wherein the electrode portion includes a plurality of line patterns overlapping with the first region of the sensing material in a vertical direction.  The semiconductor device according to claim 1, wherein the first and second pad portions and the electrode portion overlap with the active layer in a vertical direction. The method according to claim 3, wherein an interval between the line patterns is larger than a width of each line pattern,
Wherein an entire length of the electrode portion is longer than a distance between the first and second pad portions. The semiconductor device according to claim 5, wherein the second region is disposed between the line patterns. The semiconductor device according to any one of claims 1 to 4, further comprising an insulating layer disposed between the sensing material and the light emitting portion. The semiconductor device according to any one of claims 1 to 4, wherein the light emitting portion includes a conductive layer between the sensor portion and the second conductive type semiconductor layer. The semiconductor device according to any one of claims 1 to 4, wherein the substrate is disposed between the light emitting structure layer and the sensor portion. The apparatus of claim 9, wherein the light emitting unit generates ultraviolet light,
Wherein the sensing material reacts with the ultraviolet light. The semiconductor device according to any one of claims 1 to 4, wherein the substrate comprises a transparent material or a conductive material. The semiconductor device according to any one of claims 1 to 4, wherein the electrode portion is electrically separated from the first and second electrodes. The semiconductor device according to any one of claims 1 to 4, further comprising a reflecting plate on the light emitting portion. 5. The sensor according to any one of claims 1 to 4, wherein the sensing material comprises a main sensing material and a catalyst,
The main sensing material is _{SnO 2, CuO, TiO 2,} In 2 O 3, ZnO, V 2 O 5, RuO 2, WO 3, ZrO 2, MoO 3, NiO, CoO, Fe 2 O 3, and AB ₂ O ₄ At least one, or two or more,
The catalyst may be selected from the group consisting of platinum, copper, rhodium, gold, palladium, iron, titanium, vanadium, chromium, nickel, (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), silver (Ag), hafnium (Hf), tantalum , Tungsten (W), rhenium (Re), and iridium (Ir). A circuit board;
A semiconductor device including a substrate on the circuit board, a light emitting portion on the substrate, and a sensor portion on the light emitting portion;
A package body disposed around the semiconductor element; And
A reflective plate disposed on the semiconductor element and having an opening,
An active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer,
The sensor unit includes a first pad unit, a second pad unit spaced apart from the first pad unit, an electrode unit extending from the first pad unit and connected to the second pad unit, / RTI &gt;
Wherein the sensing member includes at least one first region overlapping the electrode portion in the vertical direction and at least one second region that is not overlapped with the electrode portion in the vertical direction,
Wherein a surface of the sensing material corresponds to at least one of an upper surface and a side surface of the light emitting portion,
Wherein the sensing material changes resistance by light emitted from the light emitting unit. The sensing device as claimed in claim 15, wherein the package body comprises a ceramic material, and the light emitting unit emits ultraviolet light.

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