KR102657719B1 - Semiconductor device and sensing device - Google Patents

Abstract

The semiconductor device disclosed in the example includes a support member; a light emitting portion on the first area of the support member; and a first sensor unit is disposed on the second region of the support member, wherein the light emitting unit includes a first conductive semiconductor layer, a second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light-emitting structural layer with an active layer therebetween, wherein the first sensor unit includes: at least one first sensing material activated by light emitted from the light-emitting unit; a first sensor electrode including a first electrode portion in contact with the first sensing material; and a second sensor electrode including a second electrode portion in contact with the first sensing material, wherein the first electrode portion is spaced apart from the second electrode portion, and the first sensing material includes the first electrode portion and the first sensing material. It is disposed on a two-electrode unit, and the first sensing material includes a first part overlapping in a vertical direction with the first electrode unit, a second part overlapping in a vertical direction with the second electrode unit, and the first and second sensing materials. It includes a third part between the electrode parts that does not overlap in the vertical direction with the first and second electrode parts.

Description

Semiconductor device and sensing device {SEMICONDUCTOR DEVICE AND SENSING DEVICE}

The embodiment relates to a semiconductor device.

The embodiment relates to a semiconductor device having a sensor unit and a light emitting unit.

The embodiment relates to a semiconductor device having a sensor unit and a light emitting unit for gas sensing.

The embodiment relates to a semiconductor device for detecting gas and a detection device thereof.

There are many types of gases in our living environment. Problems such as gas accidents at homes, businesses, and construction sites, explosion accidents, and pollution at oil complexes, coal mines, and chemical plants are continuing. Human sense organs cannot quantitatively determine the concentration of dangerous gases or determine the type of gas. In order to respond to this, gas sensors using the physical or chemical properties of substances have been developed and are used for gas leak detection, concentration measurement, and alarm.

Research on these gas sensors has been conducted for a long time, and many types of gas sensors are currently commercialized. In a gas sensor using a semiconductor, when a gas component adsorbs to the surface of a semiconductor or reacts with an adsorbed gas such as oxygen that has previously been adsorbed, electrons are transferred between the adsorbed molecules and the semiconductor surface, which changes the conductivity of the semiconductor. The surface potential, etc. changes, and this is the principle of detecting such changes.

Semiconductor gas sensors have the advantages of simple structure, easy processing, small size, and low power consumption compared to optical gas sensors or electrochemical gas sensors that measure conductivity based on the spectrum of the measured atmosphere or ion mobility. .

The embodiment provides a semiconductor device for gas detection and a method of manufacturing the same.

The embodiment provides a semiconductor device having a sensor unit that detects gas in response to light emitted from the light emitting unit and a method of manufacturing the same.

An embodiment provides a semiconductor device having a light emitting unit that radiates light onto different areas of a substrate and a sensor unit that senses gas.

An embodiment provides a semiconductor device in which one or more sensor units are disposed on a substrate in a region corresponding to at least one side of a light emitting unit and sides of the light emitting unit.

The embodiment provides a semiconductor device for a gas sensor.

An embodiment provides a sensing device having a semiconductor element for a gas sensor.

A semiconductor device according to an embodiment includes a support member; a light emitting portion on the first area of the support member; and a first sensor unit is disposed on the second region of the support member, wherein the light emitting unit includes a first conductive semiconductor layer, a second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light-emitting structural layer with an active layer therebetween, wherein the first sensor unit includes: at least one first sensing material activated by light emitted from the light-emitting unit; a first sensor electrode including a first electrode portion in contact with the first sensing material; and a second sensor electrode including a second electrode portion in contact with the first sensing material, wherein the first electrode portion is spaced apart from the second electrode portion, and the first sensing material includes the first electrode portion and the first sensing material. It is disposed on a two-electrode unit, and the first sensing material includes a first part overlapping in a vertical direction with the first electrode unit, a second part overlapping in a vertical direction with the second electrode unit, and the first and second sensing materials. It may include a third part between the electrode parts that does not overlap in the vertical direction with the first and second electrode parts.

A sensing device according to an embodiment includes: a package body having a cavity; a semiconductor device disposed within the cavity; and a reflective plate having an opening disposed on the semiconductor device, wherein the semiconductor device includes: a support member; a light emitting portion on the first area of the support member; and a first sensor unit is disposed on the second region of the support member, wherein the light emitting unit includes a first conductive semiconductor layer, a second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light-emitting structural layer with an active layer therebetween, and the first sensor unit 105 includes: at least one first sensing material activated by light emitted from the light-emitting unit; a first sensor electrode including a first electrode portion in contact with the first sensing material; and a second sensor electrode including a second electrode portion in contact with the first sensing material, wherein the first electrode portion is spaced apart from the second electrode portion, and the first sensing material includes the first electrode portion and the first sensing material. It is disposed on a two-electrode unit, and the first sensing material includes a first part overlapping in a vertical direction with the first electrode unit, a second part overlapping in a vertical direction with the second electrode unit, and the first and second sensing materials. It may include a third part between the electrode parts that does not overlap in the vertical direction with the first and second electrode parts.

According to an embodiment, a second sensor unit may be included on the third region of the support member, and the second sensor unit may include a second sensing material and third and fourth sensor electrodes in contact with the second sensing material.

According to an embodiment, the first and second sensing materials may be disposed on at least two of the plurality of sides of the light emitting unit.

According to an embodiment, it includes a first lead electrode and a second lead electrode electrically connected to the light emitting unit on the support member, wherein the first lead electrode and the second lead electrode are the first and second sensor electrodes. They are electrically separated and include an insulating layer on the support member, and the insulating layer may be disposed between the support member, the first and second lead electrodes, and the first and second sensor electrodes.

According to an embodiment, the light emitting unit may be disposed between the first and second sensing materials.

According to an embodiment, it includes a first lead electrode and a second lead electrode electrically connected to the light emitting unit on the support member, wherein the first lead electrode and the second lead electrode are the first and second sensor electrodes and Can be electrically separated.

According to an embodiment, an insulating layer may be included on the support member, and the insulating layer may be disposed between the support member, the first and second lead electrodes, and the first and second sensor electrodes.

According to an embodiment, at least one of the first and second electrode units may include a protrusion extending to at least one side or both sides of the sensing material. The first and second electrode units have first and second open areas that are open in opposite directions from the gap area between the first and second sensor electrodes, and the first sensing material may be disposed in the first and second open areas. . The distance between the first and second sensor electrodes in the first and second open areas may be larger than the width of the gap area and smaller than the bottom length of the first sensing material in the second axis direction.

According to an embodiment, the first and second electrode parts may include one or more patterns extending in the direction of the first and second open areas.

According to an embodiment, the length of the first sensing material in the second axis direction may be greater than the length of the light emitting unit in the second axis direction.

According to an embodiment, the first sensor electrode has a first pad portion, the second sensor electrode has a second pad portion, and the first sensing material may be disposed between the first and second pad portions.

According to an embodiment, the light emitting unit is an LED including a substrate and first and second electrodes under the light emitting structure layer, and the substrate may be disposed on the light emitting structure layer.

According to an embodiment, the light emitting unit may include a vertical or horizontal LED. The light emitting unit is a semiconductor device that generates ultraviolet light.

According to an embodiment, the support member may include a substrate made of an insulating or conductive material. The support member has a concave recess at the top, and the light emitting part may be disposed in the recess.

According to an embodiment, the first sensing material includes a main sensing material and a catalyst, and the main sensing material is SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , and AB ₂ O ₄ It includes at least one or two of the following, and the catalyst includes platinum (pt), copper (Cu), rhodium (Rd), gold (Au), palladium (Pd), iron (Fe), titanium (Ti), and vanadium ( V), chromium (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), rutanium (Ru), rhodium (Rh), silver (Ag), It may include at least one or two of hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), and iridium (Ir).

According to an embodiment, it includes first and second lead electrodes electrically connected to the light emitting unit on the support member and a plurality of electrode patterns on the bottom of the cavity, wherein the first and second lead electrodes and the first and second lead electrodes are electrically connected to the light emitting unit. The sensor electrode may be electrically connected to the plurality of electrode patterns.

According to an embodiment, it includes a second sensor unit on the third region of the support member, the package body includes a ceramic material, and includes a plurality of lower patterns on the bottom of the package body, and the electrode pattern is located on the lower portion of the support member. It can be electrically connected to the pattern.

The embodiment can improve the reliability of a semiconductor device or a gas sensor by providing a sensor unit activated by light emitted from the light emitting unit as a semiconductor device.

The embodiment implements a semiconductor device or a gas sensor using light from an LED without a heater, thereby solving problems that require time, such as the durability of the heater or the warm-up time caused by the heater.

In the embodiment, the size of the gas sensor can be miniaturized by arranging the light emitting unit and the sensor unit on different areas of the substrate.

The embodiment may implement a semiconductor device or gas sensor in which a light emitting unit of a flip chip structure and a sensor unit are disposed on a side thereof.

An embodiment may implement a semiconductor device or a gas sensor having a light emitting unit in a horizontal chip structure and a sensor unit on a side thereof.

The embodiment may implement a semiconductor device or gas sensor in which a light emitting unit of a vertical chip structure and a sensor unit are disposed on a side thereof.

The embodiment can improve the sensing sensitivity of a gas sensor.

The embodiment can miniaturize a semiconductor device having a sensor unit for gas detection.

The embodiment can reduce power consumption of the sensor unit for gas detection.

The embodiment can improve the reliability of a semiconductor device having a sensor unit for gas detection and a sensing device having the same.

1 is a perspective view of a semiconductor device according to a first embodiment.
FIG. 2 is a plan view of the semiconductor device of FIG. 1.
FIG. 3 is a partially enlarged view of the semiconductor device of FIG. 2.
FIG. 4 is a cross-sectional view along the line A-A' of the semiconductor device of FIG. 2.
FIG. 5 is a cross-sectional view taken along line B-B' of the semiconductor device of FIG. 2.
FIG. 6 is another example of the light emitting unit of the semiconductor device of FIG. 2.
Figure 7 is another example of a light emitting unit in the semiconductor device of Figure 2.
FIG. 8 is a modified example of the electrode structure of the light emitting unit and sensor unit in the semiconductor device of FIG. 2.
FIG. 9 is a first modified example of a sensor electrode in the semiconductor device of FIG. 2.
FIG. 10 is a second modified example of a sensor electrode in the semiconductor device of FIG. 2.
FIG. 11 is a third modified example of a sensor electrode in the semiconductor device of FIG. 2.
FIG. 12 is a modified example of the semiconductor device of FIG. 2 and is an example of a semiconductor device having a plurality of sensor units.
FIG. 13 is a diagram illustrating an example in which a support substrate has a recess in a semiconductor device according to an embodiment.
FIG. 14 is a diagram showing an example in which the semiconductor device of FIG. 12 has a recess in the support substrate.
FIG. 15 is a perspective view showing a sensing device including the semiconductor device of FIG. 12 as a second embodiment.
Figure 16 is a side cross-sectional view of the sensing device of Figure 15;
Figure 17 is an example of a light emitting unit of a semiconductor device according to an embodiment.
18 is another example of a light emitting unit of a semiconductor device according to an embodiment.
Figure 19 is a diagram for explaining an example of gas sensing by a sensor unit according to an embodiment.
Figure 20 is a graph showing the change in resistance of the sensor unit according to an embodiment.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below. Even if a matter described in a specific embodiment is not explained in another embodiment, it may be understood as a description related to another embodiment, unless there is a description that is contrary or contradictory to the matter in the other embodiment. For example, if a feature for configuration A is described in a specific embodiment and a feature for configuration B is described in another embodiment, the description is contrary or contradictory even if an embodiment in which configuration A and configuration B are combined is not explicitly described. Unless otherwise stated, it should be understood as falling within the scope of the rights of the present invention.

Hereinafter, embodiments of the present invention that can specifically realize the above object will be described with reference to the attached drawings. In the description of the embodiment according to the present invention, in the case where each element is described as being formed "on or under", (or under) includes both elements that are in direct contact with each other or one or more other elements that are formed (indirectly) between the two elements. Additionally, when expressed as "on or under", it can include not only the upward direction but also the downward direction based on one element.

<Example>

FIG. 1 is a perspective view of a semiconductor device according to a first embodiment, FIG. 2 is a plan view of the semiconductor device of FIG. 1, FIG. 3 is a partial enlarged view of the semiconductor device of FIG. 2, and FIG. 4 is a plan view of the semiconductor device of FIG. 2. It is a cross-sectional view along the line A-A', and FIG. 5 is a cross-sectional view along the line B-B' of the semiconductor device of FIG. 2.

1 to 5, the semiconductor device 100 according to the embodiment includes a support member 350, a light emitting portion 101 on the first area of the support member 350, and a light emitting unit 101 on the first region of the support member 350. It includes a sensor unit 105 on the second area.

The semiconductor device 100 may have an electrode structure such as a lead electrode disposed on the support member 350. The electrode structure may include first and second lead electrodes 320 and 330 connected to the light emitting unit 101. The electrode structure may include sensor electrodes 151 and 153 of the sensor unit 105.

The semiconductor device 100 may have a light emitting unit 101 and a sensor unit 105 disposed on different areas of the support member 350. In the semiconductor device 100, the light emitting unit 101 and the sensor unit 105 may not overlap in the vertical direction (Z). The light emitting unit 101 and the sensor unit 105 may be arranged to overlap in the horizontal direction with respect to the light emitting unit 101. The resistance of the sensor unit 105 may be changed by the light emitted from the light emitting unit 101. The sensor unit 105 may have lower resistance or conductivity due to light emitted from the light emitting unit 101.

The light emitting unit 101 according to the embodiment may be implemented in at least one of a horizontal chip structure, a vertical chip structure, and a flip chip structure, but is not limited thereto. The light emitting unit 101 may include, for example, a light emitting element. The light emitting device includes a light emitting diode (LED), and the LED may emit at least one of ultraviolet rays, visible rays, and infrared rays. The light emitting unit 101 according to an embodiment may emit light of an ultraviolet wavelength, for example, 400 nm or less or light in the range of 300 nm to 400 nm. In the semiconductor device according to the embodiment, the distance (K1 in FIG. 2) between the light emitting unit 101 and the sensor unit 105 is 5 times or less the width (C2) of the light emitting unit 101, for example, 1 to 5 times. It could be the range of a ship.

As shown in FIG. 2 , the size of the semiconductor device 100 may be in the range of horizontal length ( When the horizontal and vertical lengths of the semiconductor device 100 are 300 ㎛ or more, it is advantageous to arrange the wire of the light emitting unit disposed within the semiconductor device, and when the horizontal and vertical lengths of the semiconductor device 100 are 5000 ㎛ or less, Since the module of the semiconductor device 100 can be manufactured small, it can be advantageously applied to various fields. In terms of advantageous placement of the wire, the horizontal and vertical lengths of the semiconductor device 100 may be 300㎛ to 700㎛, and within the above range, reliability can be ensured by heat or moisture or other substances contained in the air. You can. The thickness or height of the semiconductor device 100 may range from 100 ㎛ or more, for example, 100 ㎛ to 500 ㎛. On a plane, the first axis direction may be a horizontal direction or an X-axis direction, and the second axis direction may be a vertical direction or a Y-axis direction perpendicular to the X-axis direction. The third axis direction may be a height or thickness direction, or may be a Z-axis direction orthogonal to the first and second axis directions.

<Support member (350)>

The support member 350 may be made of a conductive or insulating material. The support member 350 may be made of a semiconductor material. The support member 350 may be made of a translucent or non-transmissive material. The support member 350 may be selected from the group such as sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , and GaAs. The support member 350 may be formed of a GaN-based semiconductor, for example, a GaN semiconductor. The support member 350 may be a bulk GaN single crystal substrate. The support member 350 may be used as a support member to support the light emitting unit 101 or a semiconductor device. If the support member 350 is made of a conductive material such as silicon, an insulating layer 352 may be disposed on the support member 350.

The thickness of the support member 350 may be 30㎛ or more, for example, in the range of 30㎛ to 300㎛. If the thickness is less than the above range, handling during manufacturing is difficult, and if it is larger than the above range, the size of the semiconductor device may increase. there is. The support member 350 may include a recess, and the recess may penetrate the support member 350 and may be arranged to expose only a partial area of the support member 350, but is not limited to this. No. When the thickness of the support member 350 is thicker than 30㎛, problems such as cracks or bending of the support member 350 that may occur during the process of arranging the recess can be efficiently suppressed, and when the thickness of the support member 350 is greater than 30㎛, it is possible to effectively suppress problems such as cracks or bending of the support member 350. When it is thinner, problems such as cracks or bending of the support member 350 due to heat or pressure can be efficiently suppressed during the process of arranging the recess on the support member 350. The length of the support member 350 in the first axis (X) direction and the length in the second axis (Y) direction may be the same or different. The length of the support member 350 in the first axis direction and the length in the second axis direction may be the horizontal and vertical lengths of the semiconductor device 100.

<Insulating layer (352)>

The insulating layer 352 may be disposed on the support member 350. The insulating layer 352 may be disposed on the entire upper surface of the support member 350. The insulating layer 352 is disposed on the upper surface of the support member 350, and includes an area between the support member 350 and the light emitting unit 101, and the support member 350 and the sensor unit 105. It can be placed in the area in between. The insulating layer 352 may be disposed between the lead electrodes 320 and 330 connected to the support member 350 and the light emitting unit 101 and the sensor electrodes 151 and 153 of the sensor unit 105.

The insulating layer 352 may be formed as a single layer or multilayer using a dielectric material. The insulating layer 352 includes an insulating material or an insulating resin formed of at least one of oxide, nitride, fluoride, and sulfide containing at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 352 may be formed selectively from, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ or MgO. The thickness of the insulating layer 352 may range from 5 ㎛ or less, for example, 0.1 ㎛ to 2 ㎛. When it is 0.1 ㎛ or more, it is more advantageous to electrically insulate, and when it is 2 ㎛ or less, it is more advantageous to electrically insulate the semiconductor device 100. Stress between the heat dissipation or support member 350 and the light emitting unit 101 and the support member 350 and the sensor unit 105 can be alleviated, and the reliability of the semiconductor device 100 can be improved.

<Electrode structure>

The electrode structure may be disposed on the support member 350 or the insulating layer 352. The electrode structure includes lead electrodes 320 and 330 connected to the light emitting unit 101. At least one of the lead electrodes 320 and 330 may be disposed below the light emitting unit 101 and includes, for example, first and second lead electrodes 320 and 330. The first and second lead electrodes 320 and 330 may be electrically connected to the light emitting unit 101. The first and second lead electrodes 320 and 330 may be arranged in a horizontal layer structure. At least one or both of the first and second lead electrodes 320 and 330 may overlap the light emitting unit 101 in a vertical direction.

The first and second lead electrodes 320 and 330 may extend in the horizontal direction of the light emitting unit 101. At least one wire may be disposed on the first and second lead electrodes 320 and 330. In order for the wire to be disposed, the first and second lead electrodes 320 and 330 may be 300 μm or more and 700 μm or less in the direction in which the wire is disposed. The direction may be the horizontal direction of the support member 350 or the vertical direction, but is not limited thereto. The first and second lead electrodes 320 and 330 may be equal to the horizontal or vertical length of the support member 350, and may be arranged shorter than the horizontal or vertical length of the support member 350. However, it is not limited to this. The ratio of the horizontal or vertical length of the support member 350 and the horizontal or vertical length of the first and second lead electrodes 320 and 330 may be 1:0.7 to 1:0.95. That is, the horizontal or vertical length of the first and second lead electrodes 320 and 330 may be 30% to 70% of the horizontal or vertical length of the support member 350. When the horizontal or vertical length of the first and second lead electrodes 320 and 330 is greater than 30% compared to the horizontal or vertical length of the support member 350, the light emitting unit 101 is activated from the first and second lead electrodes 320 and 330. ) can be advantageous for injecting current, and when it is less than 70%, damage to the first and second lead electrodes 320 and 330 can be prevented when the support member 350 is manufactured as a module.

The first and second lead electrodes 320 and 330 may extend outside the area of the light emitting unit 101. The extension directions of the first and second lead electrodes 320 and 330 may extend in opposite directions with the light emitting unit 101 as the center. The first and second lead electrodes 320 and 330 may be disposed within a recess of the support member 350. In this case, a bottom pad to which the first and second lead electrodes are connected may be disposed on the lower surface of the support member 350. You can.

The first and second lead electrodes 320 and 330 are titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), and tin (Sn). ), silver (Ag), aluminum (Al), phosphorus (P), or a selective alloy thereof, and may be formed as a single layer or multilayer. 2 and 5, when the first and second lead electrodes 320 and 330 are multilayered, bonding layers 321 and 331 are formed on the insulating layer 352 or the support member 350, and a reflective layer is formed on the bonding layers 321 and 331. (322,332) can be placed. The bonding layers 321 and 331 may be bonded between the reflective layers 322 and 332 and the insulating layer 352 or the support member 350 and may be bonded to the light emitting unit 101 and the joining members 341 and 342. The bonding layers 321 and 331 may be single-layered or multi-layered, and in the case of single-layered layers, they may be made of gold or gold alloy. The bonding layers 321 and 331 may be arranged in a laminated structure such as adhesive metal/bonding metal, for example. The bonding metal may include at least one of Ti, Ni, Cr, Ta, and Pt, and the bonding metal may include Au and an Au alloy. The reflective layers 322 and 332 may be single-layered or multi-layered. If single-layered, they may contain at least one of aluminum, silver, and gold. If multi-layered, they may be adhesive metal/reflective metal, and the adhesive metal may be one of the above metals. may be selected, and the reflective metal may be selected from aluminum, silver, and gold. The reflective layers 322 and 332 may overlap the area of the light emitting unit 101 by 10% or less, and may reflect light incident on the periphery of the light emitting unit 101. The reflective layers 322 and 332 may be spaced apart from the bonding members 341 and 342 disposed in the lower regions R1 and R2 of the light emitting unit 101 . As the reflective layers 322 and 332 are closer to the light emitting unit 101, a bonding error may occur. The top surface area of the reflective layers 322 and 332 may be smaller than the top surface area of the bonding layers 321 and 331.

The first and second lead electrodes 320 and 330 may be provided with pads 323 and 333. The pads 323 and 333 can be removed when the bonding layers 322 and 332 are open and exposed. The pads 323 and 333 of the first and second lead electrodes 320 and 330 may be spaced apart from each other, for example, greater than the length C1 of the light emitting unit 101 in the second axis direction. The pads 323 and 333 include a first pad 323 disposed on the first reflective layer 321 of the first lead electrode 320 and a second reflective layer 332 of the second lead electrode 330. Includes a second pad 333. The first and second pads 323 and 333 may be disposed on opposite sides of the light emitting unit 101. The first and second pads 323 and 333 may be disposed on the first and second bonding layers 321 and 331 of the first and second lead electrodes 320 and 330, respectively, but are not limited thereto.

The first and second pads 323 and 333 may be connected to a connecting member such as a wire to receive power. The first and second pads 323 and 333 may not be formed separately when the first and second lead electrodes 320 and 330 have a via structure. The top view shape of the first pad 323 and the top view shape of the second pad 333 may be different shapes, and may be selected from, for example, a circular shape or a polygonal shape. The first and second lead electrodes 320 and 330 are arranged to have a long length in the second axis direction, and the light emitting unit 101 is located at the boundary area of the first and second lead electrodes 320 and 330. ) can be electrically connected to.

The widths (X2) of the first and second lead electrodes 320 and 330 in the first axis direction may be the same or different from each other, but are not limited thereto. The width (X2) may be larger than the width (C2) of the light emitting unit 101.

<Light emitting unit (101)>

The light emitting unit 101 includes a light emitting structure layer 120 having a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125, as shown in FIG. 17. The light emitting unit 101 may include a first electrode 141 connected to the first conductive semiconductor layer 121, and a second electrode 143 connected to the second conductive semiconductor layer 125. there is. The light emitting unit 101 may include a substrate 111. The light emitting structure layer 120 may be disposed on the substrate 111. The sensor unit 105 may correspond to at least one of the sides of the light emitting unit 101.

The light emitting unit 101 may be disposed on at least one of the first and second lead electrodes 320 and 330. The light emitting unit 101 may be disposed on the first and second lead electrodes 320 and 330 and the gap area 325 between the first and second lead electrodes 320 and 330, but is not limited thereto.

Referring to FIG. 17, the light emitting unit 101 may include a substrate 111. The substrate 111 may be disposed on the light emitting structure layer 120. The substrate 111 may be made of a conductive or insulating material. The substrate 111 may be made of a semiconductor material. The substrate 111 may be made of a translucent or non-transmissive material. The substrate 111 may be selected from the group such as sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , and GaAs. The substrate 111 may be formed of a GaN-based semiconductor, for example, a GaN semiconductor. The substrate 111 may be a bulk GaN single crystal substrate.

At least one of the upper and lower surfaces of the substrate 111 may include a plurality of protrusions 111B, and the protrusions 111B may be formed of the material of the substrate 111 or of an insulating material. The side cross section of the protrusion may have a hemispherical shape or a polygonal shape. The protrusion changes the critical angle of incident light and can improve light extraction efficiency.

The thickness of the substrate 111 may be 30 ㎛ or more, for example, in the range of 30 ㎛ to 300 ㎛. If it is less than the above range, handling during manufacturing is difficult, and if it is larger than the above range, the size of the light emitting unit 101 may be small. It can get bigger. The length of the substrate 111 in the first axis (X) direction and the length in the second axis (Y) direction may be the same or different. The substrate 111 may be separated from the light emitting unit 101 and removed. The light emitting unit 101 may be provided by removing the substrate 111 or without the substrate.

A semiconductor layer having at least one of a group III-V compound semiconductor and a group II-VI compound semiconductor may be formed between the substrate 111 and the light emitting structure layer 120. The semiconductor layer may be a stack of multiple layers. The growth equipment for the compound semiconductor layer includes electron beam evaporation, PVD (physical vapor deposition), CVD (chemical vapor deposition), PLD (plasma laser deposition), dual-type thermal evaporator sputtering, and MOCVD ( It can be formed by metal organic chemical vapor deposition, etc., but is not limited thereto. The substrate on which the semiconductor layer is grown may be a growth substrate or a translucent substrate, and the substrate separately attached to the semiconductor layer may be a conductive or non-conductive substrate or may be made of a translucent or non-transmissive material.

In the embodiment, a reflective layer is further disposed on the substrate 111 to reflect light traveling in the direction of the substrate to the sensor unit 105.

Light-emitting structural layer (120)

The light-emitting structural layer 120 may include a compound semiconductor of group II to VI elements, such as a group II and VI compound semiconductor or a group III and V compound semiconductor. The light emitting structure layer 120 may be disposed under the substrate 111. The upper surface of the light emitting structure layer 120 may face the lower surface of the substrate 111. Another semiconductor layer may be further disposed between the light emitting structure layer 120 and the substrate 111, but this is not limited. The light emitting structure layer 120 may include a first conductive semiconductor layer 121, an active layer 123, and a second conductive semiconductor layer 125.

The first conductive semiconductor layer 121 may be disposed between the substrate 111 and the active layer 123. The first conductive type semiconductor layer 121 includes a dopant of the first conductive type, for example, an n-type dopant such as Si, Ge, Sn, Se, Te, etc. The first conductive semiconductor layer 121 includes the composition formula In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 121 is a compound semiconductor of group III-V elements doped with a first conductive dopant, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, It can be selected from GaAsP and AlGaInP. The first conductive semiconductor layer 121 may be formed as a single layer or multilayer, but is not limited thereto. The first conductive semiconductor layer 121 may be formed in a superlattice structure in which at least two different layers are alternately arranged. The first conductive semiconductor layer 121 may be an electrode contact layer.

The active layer 123 may be disposed between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 125. The active layer 123 optionally includes a single quantum well, multiple quantum well (MQW), quantum wire structure, or quantum dot structure. The active layer 123 includes a cycle of a well layer and a barrier layer. The well layer includes the formula In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the barrier layer includes In _x Al _y It may include the composition formula Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The period of the well layer/barrier layer is, for example, InGaN/GaN, InGaN/AlGaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/InAlGaN, AlGaN/AlGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP , can be implemented as a pair of InP/GaAs. The cycle of the well layer/barrier layer may be two or more cycles of the pairs, and the barrier layer may be formed of a semiconductor material having a band gap wider than that of the well layer. The active layer 123 may selectively emit light within a wavelength range from visible light to ultraviolet light, for example, light having a peak wavelength of visible light or light having a peak wavelength of blue, but is not limited thereto.

The second conductive semiconductor layer 125 is disposed between the active layer 123 and the lead electrodes 320 and 330 and may include a semiconductor doped with a second conductive type dopant. The second conductive semiconductor layer 125 includes, for example, a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) . The second conductive semiconductor layer 125 may be made of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The second conductive semiconductor layer 125 is a p-type semiconductor layer, and the second conductive dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba. The second conductive semiconductor layer 125 may be formed as a single layer or multilayer, but is not limited thereto. The second conductive semiconductor layer 125 may be formed in a superlattice structure in which at least two different layers are alternately arranged. The second conductive semiconductor layer 125 may be an electrode contact layer.

As another example of the light emitting structure layer 120, the first conductive semiconductor layer 121 may be a p-type semiconductor, and the second conductive semiconductor layer 125 may be an n-type semiconductor. The light emitting structure layer 120 may include at least one of a p-n junction, n-p junction, n-p-n junction, and p-n-p junction structure depending on the junction type. The p is a p-type semiconductor layer, the n is an n-type semiconductor layer, the n-p junction or p-n junction has an active layer, and the n-p-n junction or p-n-p junction may have at least one active layer between n-p or between p-n. .

The light emitting structure layer 120 may further include other layers above and/or below the above layers, but is not limited thereto. The upper surface area of the light emitting structural layer 120 may be narrower than the lower surface area. The area of the lower surface of the light emitting structure layer 120 may be the same as or smaller than the area of the upper surface of the substrate 111. Here, the area may be the area formed by the X-axis-Y-axis plane. The side surfaces of the light emitting structure layer 120 may be formed as inclined surfaces with respect to the vertical axis direction (Z), and such inclined surfaces may improve light extraction efficiency.

<Electrode structure of light emitting part>

The electrode structure of the light emitting unit 101 according to the embodiment may include first and second electrodes 141 and 143, and a conductive layer 114.

The first electrode 141 may be electrically connected to the first conductive semiconductor layer 121. The first electrode 141 may be implemented as a pad. The first electrode 141 may be disposed under a portion of the first conductive semiconductor layer 121. The first electrode 141 may be disposed in a higher area than the second electrode 143 and may face the side of the active layer 123. The first electrode 141 is made of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), and silver. It may be formed of at least one of (Ag), aluminum (Al), and phosphorus (P), or a selective alloy thereof, and may be formed as a single layer or multilayer.

The second electrode 143 may be disposed below the second conductive semiconductor layer 125. The second electrode 143 may be electrically connected to at least one of the conductive layer 114 and the second conductive semiconductor layer 125. The second electrode 143 may be implemented as a pad. The second electrode 143 is made of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), It may be formed of at least one of silver (Ag), aluminum (Al), and phosphorus (P), or a selective alloy thereof, and may be formed as a single layer or multilayer. The first and second electrodes 141 and 143 may be arranged to be spaced apart in the horizontal direction on the light emitting structure layer 120.

The conductive layer 114 may be disposed below the light emitting structure layer 120. The conductive layer 114 is one of the area between the second conductive semiconductor layer 125 and the second electrode 143 and the area between the first conductive semiconductor layer 121 and the first electrode 141. It can be placed in at least one or both. For example, the conductive layer 114 is disposed below the second conductive semiconductor layer 125 and may be electrically connected to the second conductive semiconductor layer 125 and the second electrode 143.

The conductive layer 114 may be implemented as a transparent layer or a layer of a reflective material. The conductive layer 114 may include at least one of metal, non-metal, or semiconductor. The conductive layer 114 may be formed of a metal or alloy containing at least one of metals such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf, It can be formed as a single layer or multiple layers. The conductive layer 114 may include at least one of a non-metal, such as a metal oxide or a metal nitride. The metal oxide or metal nitride is ITO (indium tin oxide), ITON (ITO nitride), IZO (indium zinc oxide), IZON (IZO nitride), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO At least one of the following materials: (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, NiO It can be included. The conductive layer 114 is formed in a concavo-convex structure, which can improve light reflection efficiency.

The protective layer 133 may be disposed below the light emitting structure layer 120. The protective layer 133 may be formed of an insulating material. The protective layer 133 can protect the conductive layer 114 and the second electrode 143, and block external moisture penetration and electrical interference. A portion of the protective layer 133 may extend and contact the side surface of the first electrode 141.

The protective layer 133 may be formed in a distributed Bragg reflector (DBR) structure, which includes a structure in which two dielectric layers with different refractive indices are alternately arranged, for example. , SiO 2 layer, Si ₃ N ₄ layer, TiO ₂ layer, Al ₂ O ₃ layer, and MgO layer may each be included.

As shown in FIG. 5, the light emitting unit 101 has a flip chip structure, and at least one of the first and second electrodes 141 and 143 is arranged in plural numbers to improve bonding force and stabilize the light emitting unit 101. I can support it. The light emitting unit 101 may be arranged in a horizontal chip structure as shown in FIG. 6 or in a vertical chip structure as shown in FIG. 7 .

<Sensor unit (105)>

1 to 4, the sensor unit 105 may be electrically separated from the light emitting unit 101, and may be a sensor that detects the presence or absence of gas in response to light emitted from the light emitting unit 101. there is. The sensor unit 105 may be disposed on the insulating layer 352. Here, the insulating layer 352 may be a protective layer of the sensor unit 105.

The sensor unit 105 includes a plurality of sensor electrodes 151 and 153 and a sensing material 150 connected to the plurality of sensor electrodes 151 and 153.

The plurality of sensor electrodes 151 and 153 may be disposed on the insulating layer 352 or the support member 350. The plurality of sensor electrodes 151 and 153 may include a first sensor electrode 151 and a second sensor electrode 153 that are separated from each other. The first and second sensor electrodes 151 and 153 include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, Hf, Mo, W, TiN, and Cr. It may be formed of a metal or alloy, and may be formed as a single layer or multiple layers. The first and second sensor electrodes 151 and 153 may be electrically separated from the first and second lead electrodes 320 and 330. Additionally, the horizontal or vertical length of the first and second sensor electrodes 151 and 153 may be the same as or different from the horizontal or vertical length of the first and second lead electrodes 320 and 330. However, it is not limited to this. The horizontal or vertical length of the first and second sensor electrodes 151 and 153 may be in the range of 30% to 70% of the horizontal or vertical length of the first and second lead electrodes 320 and 330. When the length of the first and second sensor electrodes 151 and 153 is more than 70% of the length of the first and second lead electrodes 320 and 330, the first pad portion 10 and the second pad portion are formed on the sensor electrodes 151 and 153. Sufficient space can be secured when arranging 30, and space can be secured to arrange the sensing material 150 and the first and second sensor electrodes 151 and 153 so that they overlap vertically. Additionally, when the length of the first and second sensor electrodes 151 and 153 is 120% or less of the length of the first and second lead electrodes 320 and 330, the resistance of the first and second sensor electrodes 151 and 153 can be sufficiently lowered.

The first and second sensor electrodes 151 and 153 may extend in the horizontal direction of the sensing material 150. The horizontal or vertical length of the first and second sensor electrodes 151 and 153 may consider the length of the wire when connected to at least one of the adjacent first and second lead electrodes 320 and 330, for example, 300㎛. It may be greater than or equal to 700㎛. The first and second sensor electrodes 151 and 153 may be the same as or different from the horizontal or vertical length of the support member 350, and for example, may be arranged shorter than the horizontal or vertical length of the support member 350. However, it is not limited to this. The ratio of the horizontal or vertical length of the support member 350 and the horizontal or vertical length of the first and second sensor electrodes 151 and 153 may be 1:0.7 to 1:0.95. That is, the horizontal or vertical length of the first and second sensor electrodes 151 and 153 may be 30% to 70% of the horizontal or vertical length of the support member 350. When the horizontal or vertical length of the first and second sensor electrodes 151 and 153 is greater than 30% compared to the horizontal or vertical length of the support member 350, the sensing material 150 is detected in the first and second sensor electrodes 151 and 153. Sensing sensitivity according to contact with can be advantageous, and when it is less than 70%, damage to the first and second sensor electrodes 151 and 153 can be prevented when the support member 350 is manufactured as a module.

The first sensor electrode 151 may include a first pad portion 10 and a first electrode portion 13 extending from the first pad portion 10 toward the sensing material 150. The first pad portion 10 is electrically connected to an external terminal, for example, may be connected with a wire. This first pad portion 10 may have a thickness greater than that of the first electrode portion 13 or may further include a bonding layer, but is not limited thereto. When the first electrode portion 13 has a bonding layer, the first pad portion 10 can be removed. As shown in FIG. 2, the top view shape of the first pad portion 10 may be formed as a circular shape, an elliptical shape, or a polygonal shape. For example, the top surface area of the first pad portion 10 may be larger than a size to which a ball of wire can be bonded, and may have a width smaller than the pattern width of the first electrode portion 13.

The second sensor electrode 153 may include a second pad portion 30 and a second electrode portion 33 extending from the second pad portion 30 toward the sensing material 150. The second pad portion 30 is electrically connected to an external terminal, for example, may be connected with a wire. This second pad portion 30 may have a thickness greater than that of the second electrode portion 33 or may further include a bonding layer, but is not limited thereto. The second pad portion 30 can be removed when the second electrode portion 33 has a bonding layer. The top view shape of the second pad portion 30 may be formed as a circular shape, an elliptical shape, or a polygonal shape. For example, the top surface area of the second pad portion 30 may be larger than a size to which a ball of wire can be bonded, and may have a width smaller than the pattern width of the second electrode portion 33.

The gap (E3 in FIG. 3) between the first and second sensor electrodes 151 and 153 may be 5㎛ or more, for example, in the range of 5㎛ to 200㎛, and if the gap is larger than the above range, the sensing sensitivity decreases and the If it is smaller than the range, sensing errors may occur due to mutual interference.

The first and second electrode parts 13 and 33 may be formed to have a thickness of 100 nm or more, for example, 200 nm or more, but are not limited thereto. The first and second pad parts 10 and 30 may be disposed to be thicker than the first and second electrode parts 13 and 33.

The first electrode portion 13 extends from the first pad portion 10 and may be in contact with the sensing material 150. The second electrode unit 33 extends from the second pad unit 30 toward the first electrode unit 13 and may be in contact with the sensing material 150. The first and second electrode parts 13 and 33 may be spaced apart from each other at a predetermined distance E3. The sensing material 150 may be disposed on the first and second electrode units 13 and 33. A plurality of first electrode units 13 may extend in the direction of the second electrode unit 33 or the second pad unit 30. A plurality of second electrode units 33 may extend in the direction of the first electrode unit 13 or the first pad unit 10. The plurality of second electrode parts 33 may be disposed between the plurality of first electrode parts 13, respectively. One or more first electrode units 13 may extend through the area of the sensing material 150 in the horizontal direction, and one or more second electrode units 33 may extend in the horizontal direction through the sensing material 150. ) can be extended toward.

The first and second electrode units 13 and 33 will be described in detail. The first electrode unit 13 has a concave first open area 15, and the second electrode unit has a concave second open area 35. The sensing material 150 may be disposed on the first and second open areas 15 and 35. The first and second open areas 15 and 35 may be open areas in opposite directions from the gap area 155 between the first and second lead electrodes 320 and 330. For example, the first open area 15 is a portion of the first sensor electrode 151 that is open in the direction from the gap area 155 between the first and second sensor electrodes 151 and 153 toward the first pad portion 10. , the second open area 35 is a portion of the second sensor electrode 153 that is open in the direction from the gap area 155 between the first and second sensor electrodes 151 and 153 toward the second pad portion 30. The width E2 of the first and second open areas 15 and 35 may be larger or smaller than the width D2 of the sensing material 150 in the first axis direction. The length between the first and second open areas 15 and 35 is the interval E1 between the first and second lead electrodes 151 and 153 in the open areas 15 and 35, or the distance between the first and second electrode parts 13 and 33. ) can be the distance between. The gap E1 may be less than or equal to the bottom length D1 of the sensing material 150 in the second axis direction. The first and second open areas (15, 35) adjust the gap (E1) between the sensing material (150) and the first and second sensor electrodes (151, 153) in the area overlapping with the sensing material (150). Given this, the sensing resistance between the first and second sensor electrodes 151 and 153 by the sensing material 150 can be set.

The first open area 15 of the first sensor electrode 151 is disposed between the first and second protrusions 16 and 17, and the first and second protrusions 16 and 17 are connected to the sensing material 150. may not overlap in the vertical direction. The second open area 35 of the second sensor electrode 153 is disposed between the third and fourth protrusions 36 and 37, and the third and fourth protrusions 36 and 37 are connected to the sensing material 150. ) may not overlap.

The sensing material 150 includes a first part 51 overlapping with the first sensor electrode 151, a second part 52 overlapping with the second sensor electrode 153, and the first and second parts. It may include a third part 53 that does not overlap the sensor electrodes 151 and 153. The third part 53 may be disposed between the first and second parts 51 and 52. The third part 53 may be arranged to overlap the first and second open areas 15 and 35. As another example, at least one or all of the first to fourth protrusions 16, 17, 36, and 37 may overlap and contact the sensing material 150 in a vertical direction. Here, the floor area of the first part 51 or the second part 52 may be smaller than the floor area of the third part 53. The floor area of the third part 53 may be larger than the sum of the floor areas of the first and second parts 51 and 52.

The width (X3) of the first and second sensor electrodes (151, 153) in the first axis direction may be greater than the bottom width (D2) of the sensing material 150. The width (X2) may be equal to or smaller than the width (X2), which may have a relationship of X2 ≥ The gap E1 of the open areas 15 and 35 between the first and second sensor electrodes 151 and 153 may be smaller than the bottom width D1 of the sensing material 150 in the second axis direction. Accordingly, the sensing material 150 may contact the first and second sensor electrodes 151 and 153. Since the sensing material 150 is disposed in the open areas 15 and 35 of the first and second sensor electrodes 151 and 153, the contact area with the sensing material 150 can be improved. The bottom width D1 of the sensing material 150 may have a long length in the Y-axis direction and may be larger than the length C1 of the light emitting unit 101 in the Y-axis direction. For example, there may be a relationship of D1 ≥ C1, or the ratio of D1:C1 may range from 1:1 to 3:1. Accordingly, the light incident area of the sensing material 150 in the Y-axis direction may be increased. Alternatively, even when D1≤C1, sensing of the sensing material 150 may be possible.

The first and second sensor electrodes 151 and 153 are made of nano powder, nano wire, nano rod, carbon nano tube (CNT), and graphene. It may include substances, but is not limited thereto.

The sensing material 150 may be disposed in the gap area 155 between the first and second sensor electrodes 151 and 153. The sensing material 150 may be arranged to overlap the first and second electrode units 13 and 33 in the vertical direction (z). The sensing material 150 may be connected to the first and second sensor electrodes 151 and 153. The sensing material 150 may be in contact with the first and second sensor electrodes 151 and 153. The sensing material 150 may be in contact with the insulating layer 352. The sensing material 150 may be physically separated from the light emitting unit 101. The gap area 325 between the gap area 155 and the first and second lead electrodes 320 and 330 may be arranged on the same straight line in the X-axis direction.

The sensing material 150 may be disposed in an area corresponding to at least one or both sides of the light emitting unit 101. The sensing material 150 may be disposed in an area that does not overlap the light emitting unit 101 in the vertical direction. The sensing material 150 may overlap in the horizontal direction with respect to the light emitting unit 101.

The sensing material 150 may be disposed on the first electrode portion 13 of the first sensor electrode 151 and the second electrode portion 33 of the second sensor electrode 153. The sensing material 150 may be activated by the wavelength of light emitted from the light emitting unit 101 or light similar thereto. Here, for activation, electron and hole pairs may be generated by the wavelength of light emitted from the light emitting unit 101 or light similar thereto. The sensing material 150 may have a resistance change of at least 30% due to incident light, and the generation rate of electron and hole pairs may increase depending on the incident wavelength and light speed.

As shown in Figures 2 and 3, the sensing material 150 may be disposed on the first and second electrode parts 13 and 33. The sensing material 150 includes a first part 51 that overlaps the first electrode portion 13 in the vertical direction (Z), and a second part that overlaps the first electrode portion 33 in the vertical direction ( 52) and a third part 53 that does not overlap the first and second electrode parts 13 and 33 in the vertical direction.

The first and second parts 51 and 52 of the sensing material 150 may protrude in opposite directions from the third part 53 disposed in the first and second open areas 15 and 35. The third part 53 may protrude in the direction of the support member. The third part 53 may be disposed between the first and second electrode parts 13 and 33.

The gap E1 between the first and second electrode parts 13 and 33 may be 5 ㎛ or more, for example, in the range of 5 ㎛ to 200 ㎛. If the gap E1 of the first and second electrode parts 13 and 33 is smaller than the above range, the reliability of the sensor may be reduced due to interference between adjacent electrode parts 13 and 33, and if it is larger than the above range, the reliability of the sensor may be reduced. The size of the sensor unit 105 may increase or the sensing sensitivity may decrease. The resistance value for gas measurement can be determined according to the distance E1 between the first and second electrode parts 13 and 33, and the closer the distance E1 between the first and second electrode parts 13 and 33 is, the closer the distance E1 between the first and second electrode parts 13 and 33 is. The resistance value of the sensing material 150 may be lowered.

As shown in Figure 19, the sensing material 150 may be in contact with the first and second sensor electrodes 151 and 153 in the area between the first and second sensor electrodes 151 and 153. Since this sensing material 150 has lower resistance or conductivity due to the light emitted from the light emitting unit 101, it can electrically connect adjacent first and second sensor electrodes 151 and 153. The sensing material 150 has a first resistance due to the light L1 incident from the light emitting unit 101, and when external gas G2 is introduced, the second resistance can be changed to a lower resistance than the first resistance. there is. Accordingly, the sensing material 150 lowers the electrical resistance between the first and second sensor electrodes 151 and 153, that is, the first and second electrode parts 13 and 33, by light (L1) and gas (G2), It can be connected electrically. Since the first and second sensor electrodes 151 and 153 are electrically connected by the sensing material 150 and the resistance is lowered, the resistance can be detected by the first and second sensor electrodes 151 and 153. The detected change in resistance can measure the presence or absence of gas by the semiconductor device.

The sensing material 150 may be formed of a metal oxide material. The sensing material 150 may include a main sensing material and a catalyst. The main sensing material may include a metal oxide material, and the catalyst may include a metal. The main sensing materials include, for example, SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , and AB. ₂ O ₄ It may include at least one or two or more of the above, and may be made of various materials that are not limited thereto. The catalyst of the sensing material 150 is, for example, platinum (Pt), copper (Cu), rhodium (Rd), gold (Au), palladium (Pd), iron (Fe), titanium (Ti), and vanadium (V). , chromium (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), rutanium (Ru), rhodium (Rh), silver (Ag), hafnium ( It may include at least one or two of Hf), tantalum (Ta), tungsten (W), rhenium (Re), and iridium (Ir). This catalyst material is a doping material in the sensing material 150 and can be mixed with the main sensing material. The sensing material 150 may include materials that may have both sensing and catalytic properties. The material of the sensing material 150 according to the embodiment can be selectively mixed from the main sensing material and catalyst according to the type of gas to be sensed. Detection by the sensor unit 105 may mean detecting not only the presence or absence of the measurement gas, but also a change in the concentration of the measurement gas.

The sensing material 150 may contact the surfaces of the first and second sensor electrodes 151 and 153 to change impedance. The sensing material 150 may be a mixture of one or two or more types of main sensing materials, and the mixed material may be doped with one or two types of catalyst materials. The catalyst material may be added in an amount of 5 wt% or less of the main sensing material, for example, in the range of 1 wt% to 5 wt%. If the catalyst material exceeds the above range, gas detection sensitivity may be reduced. For example, when the sensing material 150 mixes SnO ₂ and ZnO, SnO ₂ can be mixed at a higher ratio than ZnO, for example, the molar ratio of SnO ₂ :ZnO is 1.1:1 to 2.5:1. It can be mixed at a ratio of , and the catalyst material can be doped with, for example, platinum (Pt) in a range of 1wt% to 3wt% of the main sensing material. Here, in the case of SnO ₂ , the band gap is about 3.6 eV, so when the light emitted from the light emitting unit 101 is 340 nm, a photo current can be formed. The particle size of the main sensing material is 30 nm or more, for example, in the range of 30 nm to 60 nm. If the particle size is small, the characteristics can be improved, but there is a problem of increased cost, and if it is larger than the above range, the surface energy is reduced and oxygen Problems may arise in which oxygen vacancy cannot be created.

Looking at the operation of the sensor unit 105 according to the embodiment, as shown in FIGS. 2 and 19, when light corresponding to the wavelength of the light L1 emitted from the light emitting unit 101 is irradiated (step ①), the detection is performed. Electron (e ^- ) and hole pairs (EHP: Electron Hole Pair) are generated by the material 150 (step ②), and at this time, the sensing material 150 is the first to interact with nitrogen or oxygen, which make up the largest composition in the atmosphere. A reaction may occur (step ③). The nitrogen is an inert gas and does not react at all with the sensing material 150 of the semiconductor device, and oxygen is adsorbed on the surface of the sensing material 150 and exists in the form of oxide ions such as O ² - , O ₂ ^- and O ^-. At this time, the oxide ion and the gas to be detected (G2) react to move electrons. At this time, a very large change in impedance, that is, high sensitivity characteristics, may appear due to electron movement on the surface of the sensing material 150. That is, the sensing material 150 generates oxide ions through a reaction between electrons and oxygen generated in response to light L1 corresponding to the wavelength of light emitted from the light emitting unit 101, and the generated oxide ions can react with the gas (G2) to be detected and change the movement of electrons through the sensing material (150). Electron movement in the sensing material 150 can change the resistance (R) between the first and second sensor electrodes 151 and 153, for example, lowering the resistance, and the change in resistance of the sensing material 150 is caused by the sensor electrode It can be detected by fields 151 and 153. The sensing material 150 may be conductive by light L1 corresponding to the wavelength of light emitted from the light emitting unit, and when the gas G2 is sensed, the conductive properties are further improved, for example, the sensing material ( 150) resistance may be lower or higher. Accordingly, the first and second sensor electrodes 151 and 153 may be electrically connected by the sensing material 150. As shown in FIG. 20, the sensing resistance level of the semiconductor device may change from low to high depending on the on and off of the ultraviolet rays (UV). The gas may include H ₂ , CO ₂ , CO, HCl, Cl ₂ , H ₂ S, H ₂ , HCN, NH _3, C ₃ H _{8 ,} C ₄ H _{10 ,} CH ₄ , etc. The sensing material 150 is a semiconductor ceramic material, and can have a resistance value in the range of hundreds of ㏀ to tens of ㏀ through processing and heat treatment. The semiconductor device 100 including the sensing material 150 may be applied in a variety of ways for detecting substances. For example, in the above embodiment, it was used to detect gas, but it can also be used to detect light and other chemical substances, but is not limited to this.

Since the sensor unit 105 and the light emitting unit 101 according to the embodiment are disposed on different areas of the support member 350, the light emitted from the light emitting unit 101 may be incident on the sensor unit 105. Therefore, the incident efficiency of light can be increased. Accordingly, the operational reliability of the sensor unit 105 can be improved.

Since the sensor unit 105 according to the embodiment is disposed adjacent to the light emitting unit 101 or in an area adjacent to the active layer 123 of the light emitting unit 101, the intensity of irradiated light can be stably provided. Since the distance K1 between the sensing material 150 of the sensor unit 105 and the light emitting portion 101 is 2000㎛ or less, for example, in the range of 500㎛ to 2000㎛, the direction of the sensing material 150 The amount of light irradiated and the decrease in luminance can be minimized, and sensing sensitivity can be improved. Accordingly, the reliability of the sensing sensitivity of the semiconductor device having the sensor unit 105 and the light emitting unit 101 on the support member can be improved.

The sensing material 150 of the sensor unit 105 according to the embodiment provides a change in resistance between the first and second sensor electrodes 151 and 153 to detect whether gas is detected by the first and second sensor electrodes 151 and 153. You can. For example, when gas is detected by the sensing material 150, the resistance value decreases and this resistance value can be detected by the first and second sensor electrodes 151 and 153. Alternatively, when there is no gas in the sensing material 150, the sensing material 150 may have insulation resistance. When the change in resistance value of the sensing material 150 changes by at least 2%, whether gas is detected can be detected by the first and second sensor electrodes 151 and 153.

The semiconductor device 100 according to the embodiment can reduce the price by using the light of the light emitting unit 101, prevent reliability degradation due to thermal shock by not using a heater, and use other MEMS (MEMS) in the membrane structure. Microelectromechanical systems) can reduce complex problems in processing or packaging. In the semiconductor device according to the first embodiment, the sensor unit 105 for gas detection and the light emitting unit 101 are arranged in adjacent areas, so packaging of the semiconductor device can be easy. The sensor unit 105 according to the embodiment detects the change in resistance caused by the sensing material 150 even if the bottom of the sensing material 150 is arranged to only contact the area between the first and second electrode parts 13 and 33. can do.

When the light emitting unit 101 according to the embodiment emits ultraviolet light, the ultraviolet LED chip has a characteristic that the light output at the corners is lower than that at the center area. Accordingly, the sensing material 150 can be arranged to correspond to the center area of the side rather than the peripheral area of the light emitting unit 101. The peripheral area may include an area adjacent to each edge of the light emitting unit 101.

Since the first and second sensor electrodes 151 and 153 are separated from the light emitting unit 101 or the first and second lead electrodes 320 and 330, the first and second pad units 10 and 30 of the sensor unit 105 can be freely placed.

Figure 6 shows a first modified example of the light emitting unit. The light emitting unit 101A may have a horizontal LED disposed therein, and may be connected to the first and second lead electrodes 320 and 330 and wires 1 and 2. This light emitting unit 101A may be disposed on the same center line as the center of the sensing material 150. The light emitting unit 101A may be disposed on any one of the first and second lead electrodes 320 and 330. For example, the light emitting unit 101A may be disposed on the first lead electrode 320 and may be disposed on the first and second lead electrodes 320 and 330 and the wire 1. It can be connected to ,2). In this case, the area of the first lead electrode 320 may be larger than the area of the second lead electrode 330, and the gap area 325 between the first and second lead electrodes 320 and 330 is the light emitting unit ( 101A). The gap area 325 between the gap area 155 and the first and second lead electrodes 320 and 330 may be arranged on different straight lines in the X-axis direction.

Figure 7 is an example of a second modification of the light emitting unit, in which the light emitting unit 101B may have a vertical LED disposed, is connected to the first lead electrode 320 with a joining member, and is connected to the second lead electrode 330 and a wire ( It can be connected to 2). This light emitting unit 101B may be disposed on the same center line as the center of the sensing material 150. The light emitting unit 101B may be placed on any one of the first and second lead electrodes 320 and 330. For example, the light emitting unit 101B may be placed on the first lead electrode 320 and connected to the second lead electrode 330 and the wire 2. can be connected In this case, the area of the first lead electrode 320 may be larger than the area of the second lead electrode 330, and the gap area 325 between the first and second lead electrodes 320 and 330 is the light emitting unit ( 101A). The gap area 325 between the gap area 155 and the first and second lead electrodes 320 and 330 may be arranged on different straight lines in the X-axis direction.

FIG. 8 is a modified example of the semiconductor device of FIG. 2, in which the bonding area 325A of the first lead electrode 320 and the bonding area 335A of the second lead electrode 330 are aligned along the X-axis of the light emitting unit 101. It can be extended to overlap on both sides of the direction. Accordingly, the light emitting unit 101 may be disposed on the bonding areas 325A and 335A of the first and second lead electrodes 320 and 330 in the X-axis direction. The light emitting unit 101 may be connected to the bonding areas 325A and 335A of the first and second lead electrodes 320 and 330 using a flip chip. In this case, the gap area 325 between the first and second lead electrodes 320 and 330 may be disposed along the bonding areas 325A and 335A of the first and second lead electrodes 320 and 330.

The sensor unit 105 includes first and second sensor electrodes 151 and 153 and a sensing material 150.

The first electrode portion 13 of the first sensor electrode 151 has a protrusion 16A protruding toward the first side of the sensing material 150, and the second electrode portion of the second sensor electrode 153 ( 33) may have a protrusion 36A protruding toward the second side of the sensing material 150. The protrusions 16A and 36A of the first and second sensor electrodes 151 and 153 may be disposed on both sides of the sensing material 150, for example, in the Y-axis direction. The sensing material 150 is disposed on the area 155A between the protrusions 16A and 36A of the first and second sensor electrodes 151 and 153, and the sensing material 150 is disposed on the first and second electrode portions ( It may be in contact with at least one of 13 and 33 and/or at least one of the protrusions 16A and 36A. The protrusions 16A and 36A and the sensing material 150 may be arranged to overlap in the X-axis direction. Here, the sensing material 150 may have a long length in the Y-axis direction and may be disposed on at least one side of the light emitting unit 101.

The gap area 325 between the gap area 155 and the first and second lead electrodes 320 and 330 may be arranged on different straight lines in the X-axis direction.

FIG. 9 is a modified example of a sensor electrode in the semiconductor device of FIG. 3. Referring to FIG. 9 , the sensor unit 105 may include first and second sensor electrodes 151 and 153 and a sensing material 150. The first sensor electrode 151 may include a protrusion 18 that protrudes in the direction of the first open area 15 between the protrusions 16 and 17. The second sensor electrode 153 is disposed between the protrusions 36 and 37 and may include a protrusion 38 protruding in the direction of the second open area 35.

The spacing between the protrusions 18 and 38 may be smaller than the spacing E3 between the first and second open areas 15 and 35, and the protrusions 18 and 38 may be positioned in the direction of the sensing material 150. For example, it may protrude in the direction of the third part 53 of the sensing material 150. Accordingly, the contact area of the sensing material 150 with the first and second sensor electrodes 151 and 153 can be increased. The width of the sensing material 150 in the X-axis direction may be larger than the width of the protrusions 18 and 38 in the X-axis direction.

FIG. 10 is a modified example of the first and second sensor electrodes of the sensor unit 105 of FIG. 2. The first sensor electrode 151 includes one or more patterns 14 extending in the X-axis direction in the first open area 15, and the second sensor electrode 153 includes the second open area 35. ) may include one or more patterns 34 extending in the X-axis direction. Here, the sensing material 150 is arranged to have a long length in the Y-axis direction, and may overlap the patterns 14 and 34 of the first and second sensor electrodes 151 and 153 in the vertical direction. The sensing material 150 may be in contact with the patterns 14 and 34 of the first and second sensor electrodes 151 and 153 in the first and second open areas 15 and 35. A change in resistance between the first and second sensor electrodes 151 and 153 can be detected according to the contact of the sensing material 150. The patterns 14 and 34 may have regular intervals or different intervals.

FIG. 11 is a modified example of the first and second sensor electrodes of the sensor unit 105 of FIG. 2. The first sensor electrode 151 includes one or more patterns 14A extending in the Y-axis direction in the first open area 15, and the second sensor electrode 153 includes the second open area 35. ) may include one or a plurality of patterns 34A extending in the Y-axis direction. Here, the sensing material 150 is arranged to have a long length in the Y-axis direction and may overlap in the vertical direction with the patterns 14A and 34A of the first and second sensor electrodes 151 and 153. The sensing material 150 may be in contact with the patterns 14A and 34A of the first and second sensor electrodes 151 and 153 in the first and second open areas 15 and 35. A change in resistance between the first and second sensor electrodes 151 and 153 can be detected according to the contact of the sensing material 150. The length of the patterns 14A and 34A of the first and second sensor electrodes 151 and 153 in the Y-axis direction may be smaller than the respective lengths of the first and second open areas 15 and 35.

FIG. 12 is a modified example of the semiconductor device of FIG. 2 and is an example provided with a plurality of sensor units. Any one of the plurality of sensor units 105 and 105A will be defined and described as the sensor unit, and parts identical to the sensor unit will be described and dedicated using the same reference numerals.

Referring to FIG. 12, the semiconductor device 100A includes a light emitting unit 101 on the first area of the support member 350, a first sensor unit 105 on the second area, and a second sensor on the third area. Includes section 105A. The first sensor unit 105A or the second sensor unit 105A refers to the sensor unit disclosed above.

The light emitting unit 101, the first sensor unit 105, and the second sensor unit 105A may be disposed on different areas of the support member 350. The light emitting unit 101 may be disposed between the first sensor unit 105 and the second sensor unit 105A. The light emitting unit 101 may be disposed between the first and second sensing materials 150 and 150A. The first and second sensor units 105 and 105A may be disposed in areas corresponding to different sides of the light emitting unit 101. The first and second sensor units 105 and 105A may be disposed in areas corresponding to at least two sides of the light emitting unit 101. The first and second sensor units 105 and 105A may be disposed in areas corresponding to opposite sides of the light emitting unit 101. The first and second sensing materials 150 and 150A may be disposed on opposite sides or different sides of the light emitting unit 101.

The distance between the first sensor unit 105 and the second sensor unit 105A is greater than the distance between the light emitting unit 101 and the first sensor unit 105, and the light emitting unit 101 and the second sensor unit 105A It may be greater than the distance between the sensor units 105A.

The first sensor unit 105 may include first and second sensor electrodes 151 and 153 and a first sensing material 150, and the first sensing material 150 may include the first and second sensor electrodes 151 and 153. ) can be connected to or contacted. The distance E1 between the electrode parts 13 and 33 of the first and second sensor electrodes 151 and 153 in the open area where the first sensing material 150 is disposed is the Y-axis of the first sensing material 150. It may be less than or equal to the direction length (D1).

The second sensor unit 105A may include third and fourth sensor electrodes 151A and 153A and a second sensing material 150A, and the second sensing material 150A may include the third and fourth sensor electrodes. It may be connected to or in contact with (151A, 153A). The distance E11 between the electrode portions 13A and 33A of the third and fourth sensor electrodes 151A and 153A in the open area where the second sensing material 150A is disposed is the distance E11 of the second sensing material 150A. It may be smaller than or equal to the length (D11) in the Y-axis direction. The distances E1 and E11 may be the same or different from each other. The first to fourth sensor electrodes 151, 153, 151A, and 153A can be selectively used for the same configuration by referring to the description of the sensor electrode disclosed above.

The first and second sensing materials 150 and 150A may be the same or different from each other. In this case, if the first and second sensing materials 150 and 150A are different, different gases can be sensed and detected.

The first and second sensing materials 150 and 150A may be made of a metal oxide material. The first and second sensing materials 150 and 150A may include a main sensing material and a catalyst. The main sensing material may include a metal oxide material, and the catalyst may include a metal. The main sensing materials include, for example, SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _{3 ,} NiO, CoO, Fe ₂ O ₃ , and AB. ₂ O ₄ It may include at least one or two or more of the above, and may be made of various materials that are not limited thereto. Catalysts of the first and second sensing materials (150 and 150A) include, for example, platinum (Pt), copper (Cu), rhodium (Rd), gold (Au), palladium (Pd), iron (Fe), and titanium (Ti). , vanadium (V), chromium (Cr), nickel (Ni), aluminum (Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), rutanium (Ru), rhodium (Rh), silver ( It may include at least one or two of Ag), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), and iridium (Ir). This catalyst material is a doping material in the first and second sensing materials 150 and 150A and can be mixed with the main sensing material. The first and second sensing materials 150 and 150A may include materials that can have both sensing and catalytic properties. The materials of the first and second sensing materials 150 and 150A according to the embodiment may be selectively mixed from the main sensing materials and catalysts described above depending on the type of gas to be sensed.

The first sensing material 150 may contact the surfaces of the first and second sensor electrodes 151 and 153 to change impedance. The second sensing material 150A may change impedance by contacting the surfaces of the third and fourth sensor electrodes 151A and 153A. The first and second sensing materials 150 and 150A may be made by mixing one or two or more types of main sensing materials, and doping one or two types of catalyst materials into this mixed material. The catalyst material may be added in an amount of 5 wt% or less of the main sensing material, for example, in the range of 1 wt% to 5 wt%. If the catalyst material exceeds the above range, gas detection sensitivity may be reduced. For example, when one of the first and second sensing materials (150, 150A) mixes SnO ₂ and ZnO, SnO ₂ can be mixed at a higher ratio than ZnO, for example, the molar ratio of SnO ₂ :ZnO Can be mixed at a ratio of 1.1:1 to 2.5:1, and the catalyst material can be doped with, for example, platinum (Pt) in a range of 1wt% to 3wt% of the main sensing material. Here, in the case of SnO ₂ , the band gap is about 3.6 eV, so when the light emitted from the light emitting unit 101 is 340 nm, a photo current can be formed. The particle size of the main sensing material is 30 nm or more, for example, in the range of 30 nm to 60 nm. If the particle size is small, the characteristics can be improved, but there is a problem of increased cost, and if it is larger than the above range, the surface energy is reduced and oxygen Problems may arise in which oxygen vacancy cannot be created.

When light L1 is irradiated from the light emitting unit 101, the sensor units 105 and 105A according to the embodiment generate electrons by the first and second sensing materials 150 and 150A, and the sensing materials 150 and 150A It is adsorbed on the surface and exists in the form of oxide ions such as O ^{2 -} , O ₂ ^- and O ^- , and at this time, the oxide ions and the gas can react to transfer electrons. At this time, a very large impedance change, that is, high sensitivity characteristics, may appear depending on the movement of electrons on the surface of the sensing material (150, 150A). That is, the sensing materials (150, 150A) generate oxide ions through a reaction between oxygen and electrons generated in response to light, and the generated oxide ions react with gas to transmit electrons through the sensing materials (150, 150A). You can move it. Electron movement in these sensing materials (150 and 150A) can change the resistance between the first and second sensor electrodes (151 and 153) and the resistance between the third and fourth sensor electrodes (151A and 153A), thereby lowering the resistance, for example. there is. Changes in resistance of the first and second sensing materials 150 and 150A in the sensor units 105 and 105A may be detected by sensor electrodes.

FIG. 13 is a modified example of a support member in the semiconductor device of FIG. 2 according to an embodiment.

Referring to FIG. 13, the semiconductor device has a recess 350A in which the top of the support member 350 is concave, and the light emitting unit 101 may be disposed in the recess 350A. The depth H1 of the recess 350A may be less than 1/2 of the thickness T1 of the support member 350. The upper surface of the light emitting unit 101 may be disposed at a lower height than the structure of FIG. 5. A sensor unit is disposed on the side of the light emitting unit 101, so that light emitted from the light emitting unit 101 can be irradiated to the sensor unit. The bottom area of the recess 350A may be larger than the bottom area of the light emitting unit 101, and the perimeter may be an inclined or vertical surface. As another example, the recess of the support member 350 may be disposed below the sensor unit, for example, below the sensing material, rather than below the light emitting unit.

The width of the recess 350A may gradually become narrower as it progresses to the bottom, and first and second lead electrodes 320 and 330 are disposed on the bottom and sides of the recess 350A to form the light emitting unit 101 and Can be electrically connected.

The insulating layer 352 may be disposed between the first and second lead electrodes 320 and 330 disposed in the recess 350A and the support member 350, but is not limited thereto.

FIG. 14 is a modified example of a support member in the semiconductor device of FIG. 12 according to an embodiment.

Referring to FIG. 14, the semiconductor device has a recess 350A in which the top of the support member 350 is concave, and the light emitting unit 101 may be disposed in the recess 350A. The depth H1 of the recess 350A may be less than 1/2 of the thickness T1 of the support member 350. The upper surface of the light emitting unit 101 may be disposed at a lower height than the structure of FIG. 5. First and second sensor units 105 and 105A are disposed on different sides of the light emitting unit 101, and the light emitted from the light emitting unit 101 is irradiated to the first and second sensor units 105 and 105A. You can.

The bottom area of the recess 350A may be larger than the bottom area of the light emitting unit 101, and the perimeter may be an inclined or vertical surface. The width of the recess 350A may gradually become narrower as it progresses to the bottom, and first and second lead electrodes 320 and 330 are disposed on the bottom and sides of the recess 350A to form the light emitting unit 101 and Can be electrically connected.

The insulating layer 352 may be disposed between the first and second lead electrodes 320 and 330 disposed in the recess 350A and the support member 350, but is not limited thereto.

FIG. 15 is an exploded perspective view of a sensing device having a semiconductor element according to a second embodiment, and FIG. 16 is a side cross-sectional view of the sensing device of FIG. 15. The example of the semiconductor device of FIG. 12 is used as the semiconductor device, and a semiconductor device such as that of FIG. 1 or another device can be selectively applied.

15 and 16, the sensing device includes a package body 360, a semiconductor device 100A disclosed in the embodiment within the cavity 352 of the package body 360, and a reflective plate on the semiconductor device 100A. It may include (370).

The package body 360 may include at least one of a resin PCB, a metal core PCB (MCPCB), and a flexible PCB (FPCB), but is not limited thereto. The package body 360 may include a ceramic material. The external size of the fraudulent package body 360 may be at least 6 mm on one side, for example, in the range of 6 mm to 12 mm x 5 mm to 12 mm.

The package body 360 has a cavity 365, and the semiconductor device 100A may be disposed in the cavity 365. The depth of the cavity 365 may be 1 mm or more, for example, in the range of 1 mm to 3 mm. The horizontal and vertical lengths of the cavity 365 may be at least 4 mm or more, for example, in the range of 4 mm to 10 mm.

A plurality of lead patterns (61, 62, 63, 64, 65, 66) are disposed on the bottom of the cavity 365, and the plurality of lead patterns (61, 62, 63, 64, 65, 66) are connected to the semiconductor. The pad portions 10, 30, 10A, 30A, 323, and 333 of the device 100A may be electrically connected to each other using a connecting member such as a wire 369. The lead pattern 61 disposed at the bottom center of the cavity 365 has an area equal to or larger than the bottom area of the semiconductor device 100A, and may be bonded to the semiconductor device 100A with an adhesive.

Lower patterns 61A, 66A, and 67A may be disposed on the bottom of the package body 360 and may be connected to the lead pattern 61 and the via structure 60. Power can be supplied or sensing resistance can be detected through these lower patterns (61A, 66A, and 67A).

The package body 360 is disposed around the semiconductor device 100A to reflect light emitted from the light emitting portion 101 of the semiconductor device 100A and conduct the light from the semiconductor device 100A. The heat generated can be dissipated. The package body 360 may be placed on a circuit board or may be coupled to another structure. In an embodiment, the semiconductor device 100A may include one or a plurality of sensor units 105 and 105A. When provided with the plurality of sensor units 105 and 105A, different gases can be detected or sensing sensitivity can be improved.

A stepped structure 362 may be disposed on the top of the package body 360. A reflective plate 370 may be disposed on the stepped structure 362. The reflective plate 370 can prevent light leakage by reflecting light. The reflective plate 370 may be tightly coupled or adhered to the stepped structure 362 of the package body 360. The reflective plate 370 may be contacted with the package body 360 using an adhesive (not shown). The sensor unit 105 can detect gas exposure by light emitted from the light emitting unit 101 and gas, such as harmful gas, introduced through the opening 372 of the reflecting plate 370. The openings 372 may be arranged one or multiple.

Since the light emitting unit 101 and the sensor unit 105 are disposed in different areas of the semiconductor device 100A, the configurations of other embodiments disclosed above can be selectively applied. In the embodiment, one of the first and second sensor electrodes 151 and 153 of the sensor unit may be commonly connected to the light emitting unit 101, and for example, the first sensor electrode 151 and the first electrode may be commonly connected. It is not limited to

As another example, the embodiment consists of one light emitting unit 101, but a plurality of light emitting units may be arranged, and the sensor unit 105 may be placed between the plurality of light emitting units, or the sensor units may be placed outside each of the different light emitting units. there is. The plurality of light emitting units may emit light at the same wavelength or at different wavelengths.

Whether or not a gas is detected by a sensing device having a semiconductor element according to an embodiment is detected by a signal processing circuit, and is transmitted through a wired or/and wireless transmission through a transmission module, or an alarm or display mode through an output module. This can be notified to the user.

Figure 18 is another example of a light emitting unit according to an embodiment.

Referring to FIG. 18, the light emitting unit 101 includes a substrate 221 and a light emitting structure layer 225, where the substrate 221 is disposed on the light emitting structure layer 225, and the light emitting structure layer ( 210) may be disposed on the first and second electrodes 245 and 247.

The substrate 221 may be, for example, a light-transmitting, conductive, or insulating substrate. A plurality of protrusions (not shown) may be formed on the upper and/or lower surface of the substrate 221, and each of the plurality of protrusions has a side cross section of at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, It may be arranged in stripe or matrix form. The protrusion can improve light extraction efficiency. Another semiconductor layer, such as a buffer layer (not shown), may be disposed between the substrate 221 and the first conductive semiconductor layer 222, but is not limited thereto. The substrate 221 may be removed, but is not limited to this.

The light emitting structure layer 225 includes a first conductive semiconductor layer 222, a second conductive semiconductor layer 224, and an active layer 223 between the first and second conductive semiconductor layers 222 and 224. Other semiconductor layers may be further disposed above and/or below the active layer 223, but are not limited thereto. For the light emitting structure layer 225, refer to the description of the embodiment disclosed above.

The first and second electrodes 245 and 247 may be disposed below the light emitting structure layer 225. The first electrode 245 is in contact with the first conductive semiconductor layer 222 and is electrically connected, and the second electrode 247 is in contact with the second conductive semiconductor layer 224 and is electrically connected. You can. The first electrode 245 and the second electrode 247 may be made of a non-transmissive metal having the characteristics of ohmic contact, adhesive layer, and bonding layer, but are not limited thereto. The first and second electrodes 245 and 247 may have a polygonal or circular bottom shape.

The light emitting unit 101 includes first and second electrode layers 241 and 242, a third electrode layer 243, and dielectric layers 231 and 233. Each of the first and second electrode layers 241 and 242 may be formed as a single layer or multiple layers and may function as a current diffusion layer. The first and second electrode layers 241 and 242 include a first electrode layer 241 disposed below the light emitting structure layer 225; And it may include a second electrode layer 242 disposed below the first electrode layer 241. The first electrode layer 241 spreads the current, and the second electrode layer 242 reflects the incident light. Here, the recess 226 may expose a partial area of the light emitting structure layer 225 through the first and second electrode layers 241 and 242. Some areas of the light emitting structure layer 225 may be areas of the first conductive semiconductor layer 222.

The first and second electrode layers 241 and 242 may be formed of different materials. The first electrode layer 241 may be formed of a light-transmitting material, for example, metal oxide or metal nitride. The first electrode layer 241 is, for example, indium tin oxide (ITO), ITO nitride (ITON), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (IAZO). , it can be selectively formed from indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO). The second electrode layer 242 is in contact with the lower surface of the first electrode layer 241 and may function as a reflective electrode layer. The second electrode layer 242 includes metal, such as Ag, Au, or Al. The second electrode layer 242 may partially contact the lower surface of the second conductive semiconductor layer 224 when a portion of the first electrode layer 241 is removed.

As another example, the first and second electrode layers 241 and 242 may be stacked in an omni directional reflector layer (ODR) structure. The non-directional reflective structure may be formed as a stacked structure of a first electrode layer 241 having a low refractive index and a second electrode layer 242 made of a highly reflective metal in contact with the first electrode layer 241. The electrode layers 241 and 242 may, for example, be made of a laminated structure of ITO/Ag. The omnidirectional reflection angle can be improved at the interface between the first electrode layer 241 and the second electrode layer 242.

As another example, the second electrode layer 242 may be removed and formed of a reflective layer made of another material. The reflection layer may be formed in a distributed Bragg reflector (DBR) structure, and the distributed Bragg reflection structure includes a structure in which two dielectric layers with different refractive indices are alternately arranged, for example, a SiO2 layer, It may each include a different one of a Si ₃ N ₄ layer, a TiO ₂ layer, an Al ₂ O ₃ layer, and an MgO layer. As another example, the electrode layers 241 and 242 may include both a distributed Bragg reflection structure and a non-directional reflection structure, and in this case, a light emitting chip having a light reflectance of 98% or more can be provided. The light emitting chip mounted in the flip manner emits light reflected from the second electrode layer 242 through the substrate 311, and thus can emit most of the light in the vertical direction.

The third electrode layer 243 is disposed below the second electrode layer 242 and is electrically insulated from the first and second electrode layers 241 and 242. The third electrode layer 243 is made of metal, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), and tin (Sn). ), silver (Ag), and phosphorus (P). A first electrode 245 and a second electrode 247 are disposed below the third electrode layer 243.

The dielectric layers 231 and 233 block unnecessary contact between the first and second electrode layers 241 and 242, the third electrode layer 243, the first and second electrodes 245 and 247, and the light emitting structure layer 225. The dielectric layers 231 and 233 include first and second dielectric layers 231 and 233. The first dielectric layer 231 is disposed between the third electrode layer 243 and the second electrode layer 242. The second dielectric layer 233 is disposed between the third electrode layer 243 and the first and second electrodes 245 and 247.

The third electrode layer 243 is connected to the first conductive semiconductor layer 222. The connection portion 244 of the third electrode layer 243 protrudes into the recess 226 of the first and second electrode layers 241 and 242 and the light emitting structure layer 225 and is connected to the first conductive semiconductor layer 222 and comes into contact Here, the recess 226 may have a gradually narrower width as it approaches the substrate 221. The recess 226 may provide an inclined surface. A plurality of the recesses 226 may be arranged to be spaced apart from each other. The connection portion 244 may be disposed in each recess 226. The recess 226 may be disposed through the second conductive semiconductor layer 125 and the active layer 123 to a partial area of the first conductive semiconductor layer 121. A portion 232 of the first dielectric layer 231 extends around the connection portion 244 of the third electrode layer 243 to form the third electrode layer 243, the first and second electrode layers 241 and 242, and the second electrode layer 243. The electrical connection between the conductive semiconductor layer 224 and the active layer 223 is blocked. An insulating layer may be disposed on the side of the light emitting structure layer 225 to protect the side, but this is not limited.

The second electrode 247 is disposed under the second dielectric layer 233 and is connected to at least one of the first and second electrode layers 241 and 242 through the open area of the first dielectric layer 231 and the second dielectric layer 233. To be touched or connected to one thing. The first electrode 245 is disposed below the second dielectric layer 233 and is connected to the third electrode layer 243 through an open area of the second dielectric layer 233. Accordingly, the protrusion 248 of the second electrode 247 is electrically connected to the second conductive semiconductor layer 224 through the first and second electrode layers 241 and 242, and the protrusion 246 of the first electrode 245 ) is electrically connected to the first conductive semiconductor layer 222 through the third electrode layer 243.

A plurality of connection parts 246 connected to the first electrode 245 can be arranged to improve current diffusion. The first and second electrodes 245 and 247 may be provided in a large area under the light emitting structure layer 225. The lower surfaces of the first and second electrodes 245 and 247 can be provided with a larger area on the same horizontal surface, so that the adhesion area with the bonding member can be improved. Accordingly, the bonding efficiency of the first and second electrodes 245 and 247 with the bonding member can be improved.

The semiconductor device or sensing device according to the embodiment may be applied to places or devices where gases such as various toxic gases or explosive gases are generated, such as inside a vehicle or a moving device such as a vehicle lamp, or may be applied to a closed space. Alternatively, it can be applied to indoor or outdoor sensing devices.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the above description focuses on the examples, this is only an example and does not limit the examples, and those skilled in the art will be able to understand various examples not exemplified above without departing from the essential characteristics of the examples. You will see that variations and applications of branches are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences related to application should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

10,10A,30,30A: Pad part
13,13A,33,33A: Electrode part
100,100A: Semiconductor device
101, 101A, 101B: light emitting unit
105,105A: Sensor unit
150,150A: Sensing material
151,153: Sensor electrode
320,330: Lead electrode
350: Support member
350A: Recess
352: insulating layer
360: package body

Claims (20)

support member;
a light emitting portion on the first area of the support member; and
A first sensor unit is disposed on the second area of the support member,
The light emitting unit includes a light emitting structure layer having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer,
The first sensor unit includes at least one first sensing material activated by light emitted from the light emitting unit; a first sensor electrode including a first electrode portion in contact with the first sensing material; and a second sensor electrode including a second electrode portion in contact with the first sensing material,
The first electrode portion is spaced apart from the second electrode portion,
The first sensing material is disposed on the first electrode unit and the second electrode unit,
The first sensing material includes a first part overlapping in a vertical direction with the first electrode part, a second part overlapping in a vertical direction with the second electrode part, and the first part between the first and second electrode parts. It includes a third part that does not overlap in the vertical direction with the two electrode parts,
The first and second electrode units have first and second open areas that are open in opposite directions from the gap area between the first and second sensor electrodes,
A semiconductor device wherein the first and second open areas overlap the third part in a vertical direction. The method of claim 1, comprising a second sensor portion on a third region of the support member,
The second sensor unit is a semiconductor device including a second sensing material and third and fourth sensor electrodes in contact with the second sensing material. The semiconductor device of claim 2, wherein the first and second sensing materials are disposed on at least two of the plurality of sides of the light emitting unit. The method of any one of claims 1 to 3, comprising a first lead electrode and a second lead electrode electrically connected to the light emitting unit on the support member,
The first lead electrode and the second lead electrode are electrically separated from the first and second sensor electrodes,
Comprising an insulating layer on the support member,
The insulating layer is a semiconductor device disposed between the support member, the first and second lead electrodes, and the first and second sensor electrodes. 5. The method of claim 4, comprising an insulating layer on the support member,
The insulating layer is a semiconductor device disposed between the support member, the first and second lead electrodes, and the first and second sensor electrodes. The semiconductor device of claim 4, wherein at least one of the first and second electrode units includes a protrusion extending to at least one side or both sides of the first sensing material. According to paragraph 4,
A semiconductor device in which the first sensing material is disposed in the first and second open areas. The semiconductor device of claim 7, wherein a distance between the first and second sensor electrodes in the first and second open areas is greater than a width of the gap region and smaller than a bottom length of the first sensing material in the second axis direction. The semiconductor device of claim 7, wherein the first and second electrode parts include one or more patterns extending in the direction of the first and second open areas. The semiconductor device according to any one of claims 1 to 3, wherein the length of the first sensing material in the second axis direction is greater than the length of the light emitting unit in the second axis direction. The method of any one of claims 1 to 3, wherein the first sensor electrode has a first pad portion, and the second sensor electrode has a second pad portion,
The first sensing material is a semiconductor device disposed between the first and second pad portions. The semiconductor device according to any one of claims 1 to 3, wherein the light emitting unit is an LED including a substrate and first and second electrodes under the light emitting structure layer, and the substrate is disposed on the light emitting structure layer. The method of claim 4, wherein the light emitting unit is connected to at least one of the first and second lead electrodes with a wire, and the horizontal or vertical length of the first and second lead electrodes is 30% to 30% of the horizontal or vertical length of the support member. Semiconductor device with a coverage of 70%. The semiconductor device according to any one of claims 1 to 3, wherein the light emitting unit generates ultraviolet light in the range of 300 nm to 400 nm. The semiconductor device according to any one of claims 1 to 3, wherein the support member includes a substrate made of an insulating or conductive material. The semiconductor device according to any one of claims 1 to 3, wherein an upper portion of the support member has a concave recess, and the light emitting unit is disposed in the recess. The method according to any one of claims 1 to 3, wherein the first sensing material includes a main sensing material and a catalyst,
The main sensing materials are SnO ₂ , CuO, TiO ₂ , In ₂ O ₃ , ZnO, V ₂ O ₅ , RuO ₂ , WO ₃ , ZrO ₂ , MoO _3, NiO, CoO, Fe ₂ O ₃ , and AB ₂ O Contains at least one or two of ₄ ,
The catalyst is platinum (pt), copper (Cu), gold (Au), palladium (Pd), iron (Fe), titanium (Ti), vanadium (V), chromium (Cr), nickel (Ni), aluminum ( Al), zirconium (Zr), niobium (Nb), molybdenum (Mo), rutanium (Ru), rhodium (Rh), silver (Ag), hafnium (Hf), tantalum (Ta), tungsten (W) A semiconductor device containing at least one or two of rhenium (Re), and iridium (Ir). a package body having a cavity;
a semiconductor device disposed within the cavity; and
It includes a reflective plate having an opening disposed on the semiconductor element,
The semiconductor device is,
support member;
a light emitting portion on the first area of the support member; and
A first sensor unit is disposed on the second area of the support member,
The light emitting unit includes a light emitting structure layer having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer,
The first sensor unit includes at least one first sensing material activated by light emitted from the light emitting unit; a first sensor electrode including a first electrode portion in contact with the first sensing material; and a second sensor electrode including a second electrode portion in contact with the first sensing material,
The first electrode portion is spaced apart from the second electrode portion,
The first sensing material is disposed on the first electrode unit and the second electrode unit,
The first sensing material includes a first part overlapping in a vertical direction with the first electrode part, a second part overlapping in a vertical direction with the second electrode part, and the first part between the first and second electrode parts. It includes a third part that does not overlap in the vertical direction with the two electrode parts,
The first and second electrode units have first and second open areas that are open in opposite directions from the gap area between the first and second sensor electrodes,
A sensing device in which the first and second open areas overlap the third part in a vertical direction. The method of claim 18, wherein first and second lead electrodes are electrically connected to the light emitting unit on the support member, and
Includes a plurality of electrode patterns on the bottom of the cavity,
A sensing device in which the first and second lead electrodes and the first and second sensor electrodes are electrically connected to the plurality of electrode patterns. 20. The method of claim 19, comprising a second sensor portion on the third region of the support member,
The package body includes a ceramic material,
Includes a plurality of lower patterns on the bottom of the package body,
A sensing device in which the lead pattern is electrically connected to the lower pattern.

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