KR20180024412A - method for sputtering using roll to roll deposition system - Google Patents

Abstract

Disclosed is a sputtering method using a roll to roll deposition apparatus. According to one embodiment of the present invention, the sputtering method using a roll to roll deposition apparatus comprises: a substrate arrangement process; a tension applying process; and a plasma generation process. In the substrate arrangement process, a flexible substrate and a target are disposed opposite to each other in a sputtering chamber through an unwinding roller and a winding roller arranged opposite to each other therein. In the tension applying process, the substrate can maintain a predetermined distance from the target. In the plasma generation process, sputtering gas can be injected into the chamber, and voltage can be applied between the substrate and the target to generate plasma in the chamber. The substrate arrangement process includes a substrate supplying process for supplying the substrate to the chamber and a substrate collecting process for collecting the substrate. Moreover, the tension applying process comprises: a roller contact process for allowing a first roller and a second roller to come in contact with the other surface of the substrate; a first substrate transferring process for providing the first roller to the second roller; and a second substrate transferring process for providing the second roller to the winding roller.

Description

[0001] The present invention relates to a sputtering method using a roll to roll deposition apparatus,

The present disclosure relates to a sputtering method using a roll-to-roll deposition apparatus, and more particularly, to a sputtering method using a roll-to-roll deposition apparatus that reduces the number of rollers and minimizes damage to a substrate while providing stable tension to a flexible substrate in a thin film deposition process And a sputtering method using the apparatus.

This study was carried out as part of the business development technology development project of the Small and Medium Business Administration in 2015 [Project number: S2325464, Title: Development of roll-to-roll sputtering element technology for stress reduction and high uniform film deposition].

Various methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and the like are used to form a thin film on a substrate. The sputtering method is an example of a PVD method and is a technique widely used for forming a thin film on a substrate. The sputtering method is a technique of colliding a cations on a plasma with a target to deposit a substance scattered from the target on a substrate to form a thin film on the substrate.

Recently, a flexible substrate on which a thin film is deposited on a display, a solar cell, a touch panel, or a window film is widely used. The flexible substrate is advantageous in terms of durability and flexibility since it is not easily broken in the thinning process as compared with an inflexible substrate such as a glass substrate.

As a method of depositing a thin film on a flexible substrate, a method using a roll-to-roll sputtering apparatus is widely used. A roll-to-roll sputtering apparatus is a device for depositing a thin film on a surface of a substrate to be supplied to a deposition region through an unwinding roller and a winding roller in a vacuum chamber by a sputtering method. A conventional conventional roll-to-roll sputtering apparatus includes a cylindrical deposition main drum in which a substrate is adhered to a surface and thin film deposition proceeds on the adhered substrate, and a plurality of sputtering cathodes arranged to face the deposition main drum. The deposition main drum includes cooling means for controlling the temperature generated in the substrate in the process of depositing the thin film on the substrate by the sputtering method. In addition, the conventional roll-to-roll sputtering apparatus includes a large number of rollers for supplying the substrate from the unwinding roller to the deposition main drum and recovering the deposited substrate to the winding roller.

In the conventional roll-to-roll sputtering apparatus shown in FIG. 1, the contact area of the substrate closely adhered to the deposition main drum is widened, so that the substrate may be horizontally biased during the thin film deposition process. The lateral misalignment of the substrate may cause the substrate to spread from the deposition main drum. As a result, there is a problem that the quality of the thin film deposited on the substrate is deteriorated due to a temperature variation in the substrate during the deposition of the thin film on the substrate. Further, by using a large number of rollers, scratches or the like generated on the substrate, the thin film formed on the substrate, and the like are generated during the movement of the substrate.

In this specification, a sputtering method using a roll-to-roll deposition apparatus in which a conventional cylindrical deposition main drum is replaced with a first roller and a second roller structure is proposed. The sputtering method disclosed in this specification enables sputtering on a curved or horizontal film. In this process, the number of rollers can be greatly reduced. Accordingly, it is possible to minimize the temperature deviation of the substrate during the deposition process, the damage of the substrate formed on the substrate, and the thin film formed on the substrate, which is a problem of the conventional roll-to-roll deposition apparatus.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a sputtering method using a roll-to-roll deposition apparatus, which does not use a conventional cylindrical deposition main drum, By utilizing the second roller, a thin film quality deterioration due to the phenomenon that the substrate is widened from the main drum during the thin film deposition process can be prevented, and the number of rollers can be minimized, thereby minimizing damage to the thin film by the roller.

In one embodiment, a sputtering method using a roll-to-roll deposition apparatus is disclosed. The sputtering method using the roll-to-roll deposition apparatus includes a substrate placement process, a tension application process, and a plasma generation process.

In the substrate disposing process, the flexible substrate and the target are opposed to each other in the sputtering chamber through an unwinding roller and a winding roller disposed opposite to each other. In the applying of the tension, tension is applied to the substrate facing the target so that the substrate maintains a predetermined distance from the target. In the plasma generation process, a sputtering gas is injected into the chamber, and a voltage is applied between the substrate and the target through a power source to generate plasma in the chamber.

The target is disposed on one side of the substrate, and a film is deposited on one side of the substrate by sputtering with the plasma.

The substrate disposing process includes a substrate supplying process for supplying the substrate to the chamber by rolling the unwinding roller, and a substrate recovering process for recovering the substrate by rolling the winding roller.

Wherein the tension application process includes a roller contact process for bringing the first roller and the second roller, which are spaced apart from each other between the unwinding roller and the winding roller, into contact with the other surface of the substrate, rolling the first roller A first substrate transferring step of supplying the substrate from the unwinding roller to the second roller, and a second substrate transferring step of supplying the substrate supplied from the first roller to the winding roller by rolling the second roller, And a substrate transfer process.

In this case, a tension is applied to the substrate portion-hereinafter referred to as a deposition region, located between the first roller and the second roller in the substrate through the rolling of the first roller and the second roller, So as to maintain the predetermined distance from the target.

The technique disclosed in this specification can provide a tension to the flexible substrate through the first roller and the second roller so that it is possible to provide a sputtering method in which the flexible substrate can be sputtered while maintaining a certain distance from the target.

In addition, the techniques disclosed herein can adjust the area of the flexible substrate to maintain a constant distance from the target through relative positioning of the first roller and the second roller, thereby enabling the use of the large area cathode in the sputtering process It is effective.

In addition, the technique disclosed in this specification can provide a sputtering method capable of adjusting the relative position of the first roller and the second roller relative to the target through the transfer mechanism, thereby adjusting the distance between the target and the flexible substrate.

In addition, the technique disclosed in this specification can provide a sputtering method capable of moving a target through a moving part, thereby adjusting the distance between the target and the flexible substrate.

Further, the technique disclosed in this specification can provide a method of effectively controlling the temperature of the substrate through the temperature setting process for the belt and the first roller and the second roller disposed on the first roller and the second roller .

In addition, the technique disclosed in this specification can increase the electron density in the region adjacent to one surface of the target opposite to the substrate through the magnetic field application process through the magnet array, thereby improving the deposition rate of the thin film .

Further, the technique disclosed in this specification can easily secure a range of an effective magnetic field for a large-area cathode by using a serpentine magnetic array

In addition, the technique disclosed in this specification can not only use a fixed magnet array but also rotate the magnet array through the rotating part, thereby adjusting the position of the corrosion area of the target to increase the service life of the target You can provide them.

The foregoing provides only a selective concept in a simplified form as to what is described in more detail hereinafter. The present disclosure is not intended to limit the scope of the claims or limit the scope of essential features or essential features of the claims.

1 is a view showing a conventional roll-to-roll sputtering apparatus.
2 is a view showing an embodiment of a roll-to-roll apparatus used in the sputtering method disclosed in this specification.
3 and 4 are views for explaining the operation of the first roller and the second roller used in the sputtering method disclosed in this specification.
5 and 6 are views for explaining various arrangements of the first roller, the second roller and the target applicable to the roll-to-roll apparatus used in the sputtering method disclosed in this specification.
7 and 8 are views for explaining the structure of a magnet array used in the sputtering method disclosed in this specification.
9 is a flowchart showing a sputtering method using a roll-to-roll deposition apparatus disclosed in this specification.
10 is a view showing an example of the magnet array 190 used in the experiment of the sputtering method using the roll-to-roll deposition apparatus disclosed in this specification.
11 and 12 are SEM images of thin films deposited by the sputtering method disclosed herein.
13 and 14 are views showing an XRD image of a thin film deposited by the sputtering method disclosed in this specification.

Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the drawings. Like reference numerals in the drawings denote like elements, unless the context clearly indicates otherwise. The exemplary embodiments described above in the detailed description, the drawings, and the claims are not intended to be limiting, and other embodiments may be utilized, and other variations are possible without departing from the spirit or scope of the disclosed technology. Those skilled in the art will appreciate that the components of the present disclosure, that is, the components generally described herein and illustrated in the figures, may be arranged, arranged, combined, or arranged in a variety of different configurations, all of which are expressly contemplated, As shown in FIG. In the drawings, the width, length, thickness or shape of an element, etc. may be exaggerated in order to clearly illustrate the various layers (or films), regions and shapes.

The description of the disclosed technique is merely an example for structural or functional explanation and the scope of the disclosed technology should not be construed as being limited by the embodiments described in the text. That is, the embodiments are to be construed as being variously embodied and having various forms, so that the scope of the rights of the disclosed technology should be understood to include equivalents capable of realizing the technical ideas.

When an element is referred to as being "disposed on another element ", it includes not only the element directly disposed on the other element but also the case where an additional element is interposed therebetween.

When an element is referred to as being " closely adhered to another element ", it includes not only the element directly adhered to the other element but also the case where an additional element is interposed therebetween.

When an element is referred to as being "contacted" with another element, it may include not only the element directly contacting the other element but also intervening additional elements therebetween.

It is to be understood that when an element is referred to as being "connected" to another element, it may be directly connected to the other element, but there may be other elements in between. On the other hand, when an element is referred to as being "directly connected" to another element, it should be understood that there are no other elements in between. On the other hand, other expressions that describe the relationship between components, such as " between " and " between "

It is to be understood that the singular " include " or " have " are to be construed as including the stated feature, number, step, operation, It is to be understood that the combination is intended to specify that it is present and not to preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

All terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosed technology belongs, unless otherwise defined. Terms defined in commonly used dictionaries should be interpreted to be consistent with meaning in the context of the relevant art and can not be construed as having ideal or overly formal meaning unless expressly defined in the present application.

The structure of the conventional roll-to-roll sputtering apparatus and the sputtering apparatus used in the present invention will be described first with reference to FIGS. 1 to 8 to explain the sputtering method using the roll to roll deposition apparatus disclosed in this specification.

1 is a view showing a conventional roll-to-roll sputtering apparatus. 1, a conventional roll-to-roll sputtering apparatus includes a chamber 1, an unwinding roller 2, a winding roller 3, a flexible substrate 4, a deposition main drum 5, a sputter gun 6, A first tension holding portion 7 and a second tension holding portion 8. The first tension holding portion 7 and the second tension holding portion 8 are formed in the same manner as in the first embodiment except that the winding rollers 2, Is disposed in the chamber (1). The flexible substrate 4 is supplied from the unwinding roller 2 and is recovered to the winding roller 3 via the deposition main drum 5. The first tensile force holding portion 7 and the second tension holding portion 8 are formed on the surface of the flexible substrate 4 placed on the deposition main drum 5 by the sputter gun 6 in the process of depositing the thin film on the surface of the flexible substrate 4 4) to keep the tension constant. The deposition main drum 5 may be cooled to keep the temperature of the substrate 4 constant during the deposition of the thin film on the surface of the substrate 4 by the sputter gun 6. [

In the conventional roll-to-roll sputtering apparatus, the close contact area of the flexible substrate 4 that is in close contact with the deposition main drum 5 is wide, so that the substrate 4 may be horizontally biased during the thin film deposition process. The lateral misalignment of the substrate 4 may cause the substrate 4 to spread from the deposition main drum 5. This causes a temperature deviation in the substrate 4 during the deposition of the thin film on the substrate 4, which results in a problem that the quality of the thin film deposited on the substrate 4 is deteriorated.

On the other hand, the first tension holding portion 7 and the second tension holding portion 8, which provide a constant tension to the substrate 4, include a large number of free rollers. In this case, by using a large number of free rollers, it is possible to cause scratches or the like on the substrate 4 during the movement of the substrate 4 to the deposition main drum 5. Further, by using a large number of free rollers, it is possible to cause damage such as scratches on the thin film formed on the substrate 4 and the substrate 4 in the course of recovering the thin film deposited substrate 4 to the winding roller 3 have.

On the other hand, the conventional roll-to-roll sputtering apparatus deposits a thin film on the surface of the substrate 4 by a plurality of sputter guns 6 having surfaces corresponding to the surface curvature of the deposition main drum 5. In this case, there is a problem that it is difficult to precisely control the thin film deposited on the surface of the substrate 4 by the space between the sputter guns 6. [ Further, there is a problem that the surface of the sputter gun 6 must be machined so that the surface of the plurality of sputter guns 6 has a surface corresponding to the surface curvature of the deposition main drum 5. These problems serve as obstacles to the implementation of large area cathodes.

The roll-to-roll apparatus disclosed in this specification has been derived in the course of solving such a problem. Hereinafter, the structure, operation, and the like of the roll-to-roll apparatus disclosed in this specification will be described with reference to FIGS. 2 to 8. FIG.

2 is a view showing an embodiment of a roll-to-roll apparatus disclosed in this specification; 3 and 4 are views for explaining the operation of the first roller and the second roller disclosed in this specification. 5 and 6 are views for explaining various arrangements of the first roller, the second roller, and the target applicable to the roll-to-roll apparatus disclosed in this specification. Figs. 7 and 8 are views for explaining the structure of the magnet arrangement disclosed in this specification. Fig.

Referring to the drawings, a roll-to-roll apparatus 100 disclosed herein includes a chamber 110, an unwinding roller 120, a winding roller 130, a target 140, a first roller 150, (160) and a power supply unit (170). In some other embodiments, the roll-to-roll apparatus 100 may optionally further include a transport mechanism (not shown). In some other embodiments, the roll-to-roll apparatus 100 may further include a first free roller 152 and a second free roller 162 optionally. In some other embodiments, the roll-to-roll apparatus 100 may further include a belt 154, optionally in the form of a closed loop. In some other embodiments, the roll-to-roll apparatus 100 may further include a heater 180 optionally. In some other embodiments, the roll-to-roll device 100 may optionally further include a cooling medium supply (not shown) or a heating medium supply (not shown). In some other embodiments, the roll-to-roll device 100 may optionally further include a third free roller 156. [ In some other embodiments, the roll-to-roll apparatus 100 may optionally further include a magnet array 190. In some other embodiments, the roll-to-roll device 100 may optionally further include a support 192. In some other embodiments, the roll-to-roll device 100 may optionally further include a power section 194.

The chamber 110 is an external and shielded space where the sputtering proceeds, and is kept in a vacuum state under a predetermined pressure to perform a thin film deposition process.

Flexible substrates can be made of polymeric materials such as synthetic resins and plastics. For example, the flexible substrate may be a flexible substrate used for a display having a flexible characteristic, a solar cell, a touch panel, a window film, and the like. As the material of the flexible substrate, various materials made of polymer such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PC (polycarbonate), PES (polyethersulphone), PAR (polyarylate) . The above example is an example for understanding, and it is possible to use a flexible material that can be applied to the roll-to-roll apparatus 100 as the substrate, in addition to the above-described examples.

An unwinding roller 120 is disposed within the chamber 110 and rolls to supply the flexible substrate. The unwinding roller 120 can be rotated by a power source such as a motor based on the center axis.

The winding roller 130 is arranged inside the chamber 110 so as to face the unwinding roller 120 and rolls to recover the flexible substrate. The winding roller 130 can be rotated by a power source such as a motor based on the center axis. In this case, the rotating direction of the unwinding roller 120 and the rotating direction of the winding roller 130 may be opposite to each other. The tension applied to the flexible substrate can be controlled by adjusting the difference in the rolling speed between the unwinding roller 120 and the winding roller 130. [ On the other hand, the rotational direction of the unwinding roller 120 and the winding roller 130 can be reversed. In this case, the unwinding roller 120 may serve to recover the substrate, and the winding roller 130 may serve to supply the substrate. In addition, the tension of the substrate can be appropriately adjusted by reversing the rotational direction of the unwinding roller 120 and the winding roller 130. Further, the feeding speed of the substrate can be controlled by controlling the rolling speed of the unwinding roller 120 and the winding roller 130.

In one example, a tension meter (not shown) may be disposed on either or both of the unwinding roller 120 or the winding roller 130. The tension applied to the flexible substrate through the tension meter may be measured, and the measured tension may be compared with a reference value. When the measured tension exceeds or falls below a predetermined range on the basis of the reference value, rotation speed and rotation direction of both or both of the unwinding roller 120 and the winding roller 130, The tension applied to the flexible substrate can be kept within a predetermined value range by controlling at least one selected.

The target 140 is disposed inside the chamber 110 and is disposed opposite to the flexible substrate moving on one side between the unwinding roller 120 and the winding roller 130. The target 140 is disposed on one surface of the flexible substrate 130 by sputtering, Lt; / RTI >

As the material of the target 140, various metal materials, alloy materials, and oxide materials can be used. Target atoms scattered by sputtering may be deposited on the one side of the flexible substrate to form a film or react with the reactive gas ions injected into the chamber 110 to be deposited on the one side of the flexible substrate to form a film. For example, when aluminum (Al) is used as the material of the target 140 and argon (Ar) gas is injected into the chamber 110, an aluminum (Al) film may be formed on the flexible substrate. As another example, the target 140 material using aluminum (Al) to the chamber 110 to the argon (Ar) gas and oxygen (O _2), the aluminum oxide wherein the flexible substrate in the case of injecting the gas (Al _x O of _y ) film may be formed. The above examples are examples for understanding, and various materials and gases other than the above-described examples may be used as the material of the target 140 and the reactive gas, respectively.

The first roller 150 and the second roller 160 are disposed within the chamber 110 and spaced apart from each other between the unwinding roller 120 and the winding roller 130, Thereby allowing the flexible substrate to maintain a predetermined distance from the target 140. The distance between the first roller 150 and the second roller 160 with respect to the target 140 may be controlled to be constant so that the flexible substrate facing the target 140 may be kept horizontal with the target 140 have. On the other hand, by adjusting the distance between the first roller 150 and the second roller 160, the area (e.g., length) of the flexible substrate that maintains the predetermined distance from the target 140 can be adjusted. In this case, the target 140 can be selected and used as a target having a size corresponding to the size of the region (for example, length) of the flexible substrate that maintains the predetermined distance from the target 140. This makes it possible to realize a large-area cathode.

More specifically, the first roller 150 rolls to supply the flexible substrate from the unwinding roller 120 to the second roller 160. The second roller 160 rolls and supplies the flexible substrate provided by the first roller 150 to the winding roller 130. The first roller 150 and the second roller 160 are in contact with the other surface of the flexible substrate and are positioned between the first roller 150 and the second roller 160 in the flexible substrate, So that the deposition region does not fall in the direction of gravity due to gravity and maintains the predetermined distance from the target 140. For example, the tension of the deposition zone can be adjusted by adjusting the relative rolling speed of the second roller 160 relative to the first roller 150 or adjusting the distance between the first roller 150 and the second roller 160 Lt; / RTI > The distance adjustment between the first roller 150 and the second roller 160 may be performed by moving at least one of the axes selected from the first roller 150, the second roller 160, and combinations thereof . 2 to 4 show a case where the distance adjustment between the first roller 150 and the second roller 160 is performed through the second roller 160 which moves relative to the first roller 150, . For example, the first roller 150 may be relatively moved with respect to the second roller 160, or the first roller 150 and the second roller 160 may simultaneously move, The distance adjustment between the first roller 150 and the second roller 160 may be performed. The movement of the first roller 150 or the second roller 160 may be performed through the movement of the rotation axis of the first roller 150 or the rotation axis of the second roller 160. In this case, a guide portion (not shown) may be disposed adjacent to the rotation axis of the first roller 150 or the rotation axis of the second roller 160, and the guide portion may have a guide hole . The rotation axis of the first roller 150 or the rotation axis of the second roller 160 may be guided along the guide holes.

In order to effectively control the tension of the deposition region through the fixed first roller 150 and the second roller 160, the lowest point of the outer circumferential surface of the first roller 150 and the second roller 160 is controlled by the non- May be located below the highest point of the outer circumferential surface of the winding roller (120) and the winding roller (130). More specifically, when the lowest point of the outer circumferential surface of the first roller 150 and the second roller 160 is located below the highest point of the outer circumferential surface of the unwinding roller 120 and the winding roller 130, The first roller 150 and the second roller 160 are naturally contacted with the lowest point of the outer circumferential surface of the first roller 150 and the second roller 160 in the process of facing the target 140 via the winding roller 120 and the winding roller 130. At this time, the tension of the deposition area can be effectively controlled by adjusting the rolling speed of each of the first roller 150 and the second roller 160 or adjusting the relative distance.

The transfer mechanism (not shown) may move at least one selected from the first roller 150, the second roller 160, and combinations thereof in the direction toward or away from the flexible substrate. The transport mechanism may adjust the predetermined distance between the deposition area and the target 140 by moving the at least one selected from the first roller 150, the second roller 160, and combinations thereof. At least one of the first roller 150, the second roller 160, and a combination thereof may apply pressure to the flexible substrate during the movement of the flexible substrate, The pressure can be reduced. Through which the transport mechanism may regulate the tension in the deposition zone.

The tension adjustment of the deposition region through the transfer mechanism is performed through the following process as an example. . First, as shown in FIG. 2 and FIG. 3 (a) for example, the substrate is disposed opposite to the target 140 via an unwinding roller 120 and a winding roller 130 disposed opposite to each other . 3 (b), at least one selected from the first roller 150, the second roller 160, and a combination thereof is fed to the substrate in the direction toward the substrate Or toward the target 140 to bring the first roller 150 and the second roller 160 into contact with the substrate. Thereafter, the rolling speed of each of the first roller 150 and the second roller 160 is adjusted, or as shown in the example of FIG. 3 (c), the distance between the first roller 150 and the second roller 160 The tension of the deposition region can be effectively controlled by adjusting the relative distance.

The first free roller 152 may be disposed between the unwinding roller 120 and the first roller 150. The second free roller 162 may be disposed between the second roller 160 and the winding roller 130. The first free roller 152 rolls to supply the flexible substrate from the unwinding roller 120 to the first roller 150. The second free roller 162 rolls and supplies the flexible substrate from the second roller 160 to the winding roller 130. In this case, the first free rollers 152 and the second flexible rollers 162 are in contact with the one surface of the flexible substrate. 3, a portion of the first free rollers 152 that is in contact with the one surface of the flexible substrate is spaced apart from a portion of the first roller 150 that is in contact with the other surface of the flexible substrate by a predetermined distance, The flexible substrate provided to the first roller 150 through the first free rollers 152 can be brought into close contact with the outer surface of the first roller 150. [ The portion of the second free rollers 162 that is in contact with the one surface of the flexible substrate is biased toward the rotation axis of the second roller 160 by a predetermined distance from the portion of the second roller 160 that is in contact with the other surface of the flexible substrate, The flexible substrate supplied to the second free roller 162 through the second roller 160 can be brought into close contact with the outer surface of the second roller 160. The extent to which the flexible substrate is in close contact with the outer surface of the first roller 150 and the outer surface of the second roller 160 is determined by adjusting the position of the first roller 150 and the second roller 160, And the like. Whereby the tension of the deposition area can be controlled.

The closed loop belt 154 is disposed outside the first roller 150 and the second roller 160. At least a part of the inner surface of the belt 154 is in close contact with the first roller 150 and the second roller 160, 1 rollers 150 and the second rollers 160. In this case, The belt 154 may be in contact with the other side of the flexible substrate to maintain the tension of the deposition region at the predetermined level so that the deposition region maintains the predetermined distance from the target 140. In other words, the belt 154 is in contact with the other surface of the flexible substrate and can rotate in close contact with the first roller 150 and the second roller 160. In addition, the belt 154 can be shifted in position in accordance with the movement of the first roller 150 and the second roller 160. Thus, the belt 154 can provide the flexible substrate with a tension that is adjusted according to the position adjustment of the first roller 150 and the second roller 160, the adjustment of the rolling speed, and the like. 4 illustrates the operation of the belt 154 as an example. The arrows in FIGS. 3 and 4 represent, for example, the direction in which the flexible substrate moves.

The belt 154 can be made of a variety of materials. In one example, the belt 154 can be made of a thin metal plate. In this case, it is possible to easily cool or heat the flexible substrate contacting the belt 154 on the other side due to the large thermal conductivity of the metal. In other words, since the belt 154 is connected to the first roller 150 and the second roller 160, the heat is exchanged with each of the first roller 150 and the second roller 160, respectively. Accordingly, the belt 154 can maintain the temperature of the deposition region at a predetermined level through heat exchange with the first roller 150 and the second roller 160 in the course of film deposition in the deposition region. In this case, since the temperature of the deposition area changes according to the temperature set in the first roller 150 and the second roller 160, the temperature of the first roller 150 and the second roller 160 is controlled, The temperature of the deposition region can be maintained at a predetermined level.

A third free roller 156 may be disposed between the first roller 150 and the second roller 160. The third free rollers 156 may function to maintain the deposition area substantially parallel to the sputtered surface of the target 140. By adjusting the number of third free rollers 156, the length or area of the deposition area that is substantially parallel to the sputtered surface of the target 140 can be increased. The third free rollers 156 may be disposed at various positions, but are preferably disposed at a position in contact with the other surface of the flexible substrate as shown in the figure. In the figure, three third free rollers 156 are represented by way of example. As another example, the number of the third free rollers 156 is not limited as long as it can perform the function of keeping the deposition area substantially parallel to the sputtered surface of the target 140 .

At least one of the first roller 150, the second roller 160, and a combination thereof may receive a cooling medium or a heating medium from a cooling medium supply unit (not shown) or a heating medium supply unit (not shown) . The flexible substrate may be heated in the process of depositing a film on the one surface of the flexible substrate. The cooling medium supply unit supplies the cooling medium to at least one selected from the first roller 150, the second roller 160, and a combination thereof to form the first roller 150 and the second roller 160 So that the flexible substrate contacting with the substrate can maintain a predetermined temperature. In particular, the belt 154 is connected to the first roller 150 and the second roller 160, and the flexible substrate contacts the belt 154, so that when the flexible substrate is passed through the belt 154, The temperature can be maintained.

For example, a cooling medium moving pipe (not shown) through which the cooling medium can flow may be formed in the first roller 150 and the second roller 160, respectively. The cooling medium supplied by the cooling medium supply unit may be moved through the cooling medium moving tube. Through which the first roller 150 and the second roller 160 can maintain the proper process temperature and provide the appropriate process temperature to the flexible substrate either directly or via the belt 154, The temperature can be maintained.

The heating medium supply unit supplies the heating medium to the at least one selected from the first roller 150, the second roller 160, and a combination thereof to form the first roller 150 and the second roller 160 So that the flexible substrate contacting with the substrate can maintain a predetermined temperature. In particular, the belt 154 is connected to the first roller 150 and the second roller 160, and the flexible substrate contacts the belt 154, so that when the flexible substrate is passed through the belt 154, The temperature can be maintained.

For example, a heating medium moving pipe (not shown) may be formed inside the first roller 150 and the second roller 160, respectively, through which the heating medium can flow. The heating medium supplied by the heating medium supply unit may move through the heating medium moving tube. Through which the first roller 150 and the second roller 160 can maintain the proper process temperature and provide the appropriate process temperature to the flexible substrate either directly or via the belt 154, The temperature can be maintained.

As the cooling medium or the heating medium, water, an alcohol, an oil, an antifreeze, a mixed antifreeze or the like may be used as an example. The above examples are for illustrative purposes only, and there is no limitation on the material of the cooling medium or the heating medium as long as the temperature of the first roller 150 and the second roller 160 can be adjusted.

The first roller 150, the second roller 160, the belt 154, and the third free roller 156 may be utilized as one or more as illustrated by way of example in FIGS. 5 and 6. In this case, one or more of the cathodes including the target 140 and the magnet array 190 may be disposed at appropriate positions. Also, the first free rollers 152 and the second free rollers 162 can be arranged as many times as needed at appropriate positions.

The power supply unit 170 generates a plasma in the chamber 110 by applying a voltage between the flexible substrate and the target 140. The voltage applied by the power supply unit 170 may be a DC voltage, a pulse DC voltage, an AC voltage, or the like. Through this, a film can be deposited on the flexible substrate using a variety of materials as a target 140 regardless of whether the target 140 has conductivity. For example, the voltage applied between the flexible substrate and the target 140 can be obtained by applying a voltage to the target 140 and the chamber 110 through the power supply unit 170. Meanwhile, in the case of the DC sputtering method, the voltage between the flexible substrate and the target 140 may be applied in such a manner that a negative voltage is applied to the target 140 and a positive voltage is applied to the chamber 110.

A process of depositing a film on the one surface of the flexible substrate in cooperation with the target 140 will be described in detail as follows.

A plasma is generated around the target 140 when a voltage is applied to the target 140 through the power source unit 170 in a state where a vacuum atmosphere is formed inside the chamber 110. [ The plasma is formed by the gas injected into the chamber 110. As the gas, a non-reactive gas including an inert gas such as argon (Ar) and a reactive gas including oxygen (O ₂ ), nitrogen (N ₂ ), etc. may be used. The gas can be injected from the storage tank (not shown) into the chamber 110 by adjusting the amount thereof by a regulator or the like. Reactive sputtering can be performed when the reactive gas is injected into the chamber 110.

Positive ions such as Ar ions in the plasma discharge region are accelerated by the electric field formed between the flexible substrate and the target 140 to move to the target 140. As a result, target atoms are released from the target 140, and a target atom is coated on the one surface of the flexible substrate to form a film. In this process, electrons in the plasma discharge region can collide with the flexible substrate or the thin film formed on the flexible substrate. The collision of the former with the flexible substrate or with the thin film formed on the flexible substrate may cause damage to the thin film and raise the temperature of the flexible substrate. In order to prevent this, a magnetron sputtering method in which a permanent magnet or an electromagnet is installed on the rear surface of the target 140 may be used. The magnetron sputtering method can reduce the collision of electrons with the flexible substrate or the thin film formed on the flexible substrate. In addition, in the sputtering process, electrons are trapped in the region adjacent to the one surface of the target 140, For example, the formation of Ar cations can be promoted. For convenience of explanation, the region adjacent to the one surface of the target 140 will be referred to as an electron trap region. When the generation of positive ions in the electron trap region is promoted, the deposition of the target 140 atoms that collide with the positive ions is promoted, thereby improving the deposition rate of the film formed on the flexible substrate. In addition, the uniformity of the film formed on the flexible substrate can be easily controlled through proper arrangement of the permanent magnet or electromagnet.

The heater 180 may be disposed between the unwinding roller 120 and the first roller 150. The heater 180 receives the flexible substrate from the unwinding roller 120 and heats the supplied flexible substrate to remove at least one selected from moisture, impurities, and combinations thereof existing in the flexible substrate have. The flexible substrate may be contaminated by impurities including moisture, oil, and the like during the production process. The process of forming a film on the flexible substrate proceeds in a vacuum environment, and the flexible substrate may be heated in the process of depositing a film on the flexible substrate. Therefore, in the process of depositing the film on the flexible substrate, the impurities are outgassed, and the film deposition rate and the film quality may be deteriorated. The heater 180 may include a heating portion 182 or a heating portion 182 and a cooling portion 184. [

The heating unit 182 may heat the flexible substrate to outgas the impurities contained in the flexible substrate. For example, a near infrared ray heating element may be used as the heating portion 182. [ As an example for the sake of understanding, the above example is not limited to the above-mentioned example, and the type of the heating unit 182 is not limited as long as the flexible substrate can be heated.

The cooling unit 184 functions to prevent the heat generated by the heating unit 182 from being transmitted to the outside of the heater 180. That is, the cooling unit 184 functions to prevent the flexible substrate from being deformed when heat generated in the heater 180 is transmitted to the outside. The cooling portion 184 may be formed in the shape of a cooling pipe (not shown) that encloses the heating portion 182, for example. For example, the cooling unit 184 may restrict the heat generated by the heating unit 182 from being transmitted to the outside of the heater 180, There is no.

On the other hand, a cooling unit (not shown) may be disposed between the heater 180 and the first roller 150. The cooling unit may function to lower the temperature of the flexible substrate out-gassed by the heater 180 to a temperature suitable for film deposition. For example, suppose that an ITO thin film is deposited on the flexible substrate using the roll-to-roll deposition apparatus 100 disclosed in the present specification. The flexible substrate may be heated to about 200 [deg.] C or more by the heater 180 to outgas the impurities from the flexible substrate. If the ITO thin film is deposited at about 80 ° C to about 120 ° C, the flexible substrate heated to about 200 ° C or more may not be cooled, resulting in deterioration of the film quality. At this time, the cooling unit may lower the temperature of the flexible substrate out-gassed by the heater 180 to a temperature suitable for film deposition to maintain the film quality deposited on the flexible substrate.

The magnet array 190 is disposed opposite the other side of the target 140 and generates a magnetic field to trap electrons in the plasma into the trap region to increase the electron density in the trap region, Thereby increasing the density of the plasma. The electrons trapped in the electron trap region are vortexed by a magnetic field in the magnet array (190) and an electric field formed between the flexible substrate and the target (140). The electrons are trapped in the electron trap region by the vortex motion, and the trapped electrons collide with the gas in the chamber 110, thereby increasing the plasma density in the electron trap region. Thereby increasing the sputtering rate.

In one embodiment, the magnet array 190 may include an inner magnet 190a, an outer magnet 190b, and a non-magnetic member 190c. The inner magnet 190a may extend in a direction substantially perpendicular to the one side of the target 140 and may be arranged such that the N pole or S pole is opposite the target 140. [ The outer magnet 190b extends in a direction substantially perpendicular to the one face of the target 140 and is spaced apart from the inner magnet 190a to surround the inner magnet 190a and a magnetic pole opposite to the inner magnet 190a And may be disposed to face the target 140. The nonmagnetic member 190c is disposed between the inner magnet 190a and the outer magnet 190b and is capable of maintaining a gap between the inner magnet 190a and the outer magnet 190b. The inner magnet 190a and the outer magnet 190b may be obtained by arranging a plurality of circular permanent magnets or arranging a plurality of square permanent magnets as shown in the example of FIG. 8 (b) , And a single lump permanent magnet. Alternatively, unlike the drawings, the inner magnet 190a and the outer magnet 190b may be implemented using an electromagnet. As an example for the sake of understanding, the inner magnet 190a and the outer magnet 190b may be implemented by various shapes of permanent magnets, electromagnets, and combinations thereof.

7 and 8, the structure of the magnet array 190 is shown as an example. FIG. 7A is a view showing an example of the structure of a conventional magnet array, and FIG. 7B is an example of the structure of the magnet array 190 applied to the roll-to-roll deposition apparatus 100 disclosed in this specification Fig. 8A and 8B are views showing examples of the structure of the magnet array 190 disclosed in this specification and the shape of a unit magnet constituting the magnet array 190, respectively.

Referring to FIGS. 7 and 8, a magnetic field is formed between the inner magnet 190a and the outer magnet 190b, which are opposite to the target 140, as shown in FIG. The magnetic field extends through the target 140 to the chamber 110 to create a magnetic field forming the electron trap region as shown in FIG. In the case of the conventional magnet array, that is, the magnet array having a race track shape, which is shown as an example in FIG. 7A, electrons are likely to come out from the vicinity of the corner portion to the outside of the electron trap region. Therefore, there is a tendency that the electron density in the vicinity of the corner portion is lowered. Particularly, as shown in FIG. 7A as an example, the tendency that the electron density in the vicinity of the corner portion is lowered when a plurality of racetrack-shaped magnet arrays are arranged in parallel to realize a large-area cathode is accelerated . In addition, when a plurality of racetrack-shaped magnet arrays are used to realize a large-area cathode, the magnets of the magnet array used may be different from each other, so that the uniformity of the magnetic field can not be sufficiently satisfied. Further, in the case of a race-track-shaped magnet array, the range of the effective magnetic field is small and it is difficult to secure a range of the effective magnetic field for the large-area cathode even when a plurality of them are connected in parallel.

In order to solve this problem, the magnet arrangement 190 used in the roll-to-roll deposition apparatus 100 disclosed in this specification is formed by projecting in the direction of the inner magnet 190a, as shown by way of example in FIG. 7 (b) And is spaced apart from the protruded pattern of the outer magnet 190b and alternately connected around the protruding pattern of the outer magnet 190b to form a meander shape And an inner magnet 190a having an inner magnet 190a. In this case, the magnet array 190 can increase the area of the electron trap region through the meandering shape, thereby realizing a large-area cathode. In other words, when the meandering shape of the magnet array 190 is used, electrons in the region adjacent to the target 140 or in the electron trap region can perform continuous cyclone movement. Thereby increasing the density of the plasma that provides the cations used for sputtering. The magnet array 190 having the shape of meander can minimize a corner portion unlike the magnet array realized through a plurality of race-track-shaped magnet arrays, thereby causing a problem caused by a decrease in electron density in the vicinity of a corner portion Can be reduced. Further, the shape of the inner magnet 190a and the shape of the outer magnet 190b, or the distance between the magnet 190a and the outer magnet 190b can be adjusted so that the effective magnetic field range for the large-area cathode can be easily secured can do.

A target 140 and a magnet array 190 may be disposed on the support 192. The target 140 may be disposed on the support 192 such that one side of the target 140 is opposite the flexible substrate. The magnet array 190 may be disposed on the support 192 against the other surface of the target 140. In this case, the magnet array 190 may be disposed on the support 192 such that the inner magnet 192 and the outer magnet 190b extend in a direction substantially perpendicular to the one side of the target 190. [ The magnet array 190 can stably apply a magnetic field to the electron trap region through the support portion 192.

The power section 194 may rotate the target 140 or the magnet array 190 or provide a tilt to the target 140 or magnet array 190. In this case, the power section 194 acts either directly on the target 140 or the magnet array 190, or acts on the support 192 to indirectly rotate the target 140 or the magnet array 190, 140 or the magnet array 190. In this case,

The power section 194 may include a rotating section 194a, a moving section 194b, and a first rotating shaft 194c. In some other embodiments, the power section 194 may optionally further include a second rotational axis 194d. In some other embodiments, the power section 194 may optionally further include an angled section (not shown).

The rotation unit 194a may rotate the target 140 or the magnet array 190 by transmitting a rotational force to the first rotation axis 194c or the second rotation axis 194d. The rotation of the target 140 or the magnet array 190 may be continuous or intermittent. In one example, the target 140 and the magnet array 190 may rotate together at the same speed by the rotating portion 194a. As another example, the target 140 and the magnet array 190 may be rotated at different speeds by the rotating portion 194a. As another example, the target 140 and the magnet array 190 may be rotated in different directions by the rotating portion 194a. In this case, the rotation speeds of the target 140 and the magnet array 190 may be equal to or different from each other. The position of the erosion region on the target 140 generated in the sputtering process can be adjusted by adjusting the rotation direction or rotation speed of the target 140 and the magnet array 190. Thereby increasing the availability of the target 140 and the service life of the target 140.

The moving part 194b can adjust the position of the target 140 or the magnet array 190. [ That is, the moving unit 194b can adjust the position of the target 140 or the magnet array 190 by simultaneously or selectively acting on the first rotation axis 194c or the second rotation axis 194d. The distance between the flexible substrate and the target 140 can be adjusted by adjusting the position of the target 140 so that the density of the target atoms scattered from the target 140 and reaching the flexible substrate can be adjusted. The position of the electron trap region can be adjusted by adjusting the position of the magnet array member 190. This can control the density of the plasma.

The inclined portion can adjust the angle of the target 140 or the magnet array 190 facing the flexible substrate. Thereby allowing the density of the target atoms to be scattered from the target 140 to reach the flexible substrate. The ramp may be, for example, a piston to which one end of the rod is connected to the target 140 or the magnet array 190. The angle of the target 140 or the magnet array 190 can be adjusted by moving the rod of the piston.

On the other hand, although not shown in the drawings, the roll-to-roll deposition apparatus 100 may include a shutter. The shutter is spaced apart from the target 140 and may be moved to face the target 140 at the completion of the deposition process to prevent further deposition of the film on the flexible substrate. Whereby the film deposited on the flexible substrate can be kept constant. Further, the shutter can be moved such that the target 140 and the flexible substrate face each other after a predetermined time has elapsed after plasma is formed in the chamber 110. Thereby preventing impurities formed on the surface of the target 140 from being scattered to the surface of the flexible substrate, thereby maintaining the purity of the film deposited on the flexible substrate.

Referring again to the drawings, the roll-to-roll deposition apparatus 100 disclosed in this specification will be described. The roll-to-roll deposition apparatus 100 disclosed in the present specification can be applied to the first roller 150 and the second roller 160 or the first roller 160 without using the deposition main drum 5 used in the conventional roll- The first roller 150, the second roller 160, and the belt 154. Through this, the roll-to-roll deposition apparatus 100 can perform the film deposition in a state where the flexible substrate is kept as horizontal as possible. On the other hand, when the third free rollers 156 are disposed between the first roller 150 and the second roller 160, the area or length of the flexible substrate that maintains the maximum horizontal position can be increased. The temperature of the flexible substrate can be effectively controlled irrespective of the area or the length of the flexible substrate which is kept as horizontal as possible when the belt 154 is disposed on the outer surfaces of the first roller 150 and the second roller 160.

In the conventional roll-to-roll sputtering apparatus using the deposition main drum 5, there is a problem that the cathode is dependent on the outer circumferential surface of the deposition main drum 5, making it difficult to use the large-area cathode. A third free roller 156 is disposed between the first roller 150 and the second roller 160 and a belt 154 disposed on the outer surfaces of the first roller 150 and the second roller 160 The roll-to-roll deposition apparatus 100 including the roll-to-roll deposition apparatus 100 can effectively control the temperature of the flexible substrate and can effectively increase the area or length of the flexible substrate that is kept as horizontal as possible, . Therefore, the above-described large-area cathodes, the magnetic arrangement 190 described above in FIGS. 7 and 8, are applicable to the roll-to-roll deposition apparatus 100 disclosed in this specification. Thereby improving the efficiency of the film deposition.

In addition, the roll-to-roll deposition apparatus 100 disclosed herein utilizes the first roller 150 and the second roller 160 or the first roller 150, the second roller 160, and the belt 154 The tension of the deposition region can be effectively controlled. The conventional roll-to-roll sputtering apparatus requires a large number of free rollers in order to maintain the tension of the flexible substrate passing through the deposition main drum 5 at an appropriate level by using the deposition main drum 5. The flexible substrate passes through the large number of free rollers, and in this process, the flexible substrate and the thin film formed on the flexible substrate often suffer damage. Also, in this process, the flexible substrate is lifted up on the deposition main drum 5, and the uniformity of the film is lowered. Since the roll-to-roll deposition apparatus 100 disclosed in this specification requires only a minimum of free rollers, it is possible to minimize damage to the flexible substrate, the thin film formed on the flexible substrate, and the like in the course of passing through the free rollers. In addition, the roll-to-roll deposition apparatus 100 disclosed in this specification effectively minimizes the floating of the flexible substrate by utilizing the first roller 150 and the second roller 160 structure, and by introducing the belt 154, The effective temperature can be controlled even if the deposition area is widened, and the uniformity and quality of the deposited film can be effectively improved.

The roll-to-roll deposition apparatus 100 disclosed in the present specification having the advantages described above can be applied to various industrial fields such as a conventional touch screen, a display, a flexible display, a semiconductor, an airplane, an architecture, a solar battery, In addition, the roll-to-roll deposition apparatus 100 disclosed in this specification can provide an apparatus capable of a sputtering process that provides high film uniformity. In addition, the roll-to-roll deposition apparatus 100 disclosed in this specification is applicable to pulse direct current sputtering. In addition, the roll to roll deposition apparatus 100 disclosed in this specification is also applicable to the AC sputtering system. In addition, the roll-to-roll deposition apparatus 100 disclosed in this specification can increase the film deposition rate by utilizing the magnet arrangement body 190.

Hereinafter, a sputtering method using the roll-to-roll deposition apparatus disclosed in the present specification will be described with reference to FIGS. 9 to 13 and FIGS. 2 to 8. FIG. In explaining the sputtering method using the roll-to-roll deposition apparatus, the inferred contents from the above-mentioned contents with reference to FIG. 2 to FIG. 8 will be omitted for convenience of description.

9 is a flowchart showing a sputtering method using a roll-to-roll deposition apparatus disclosed in this specification. Referring to FIG. 9, a sputtering method 200 using a roll-to-roll deposition apparatus includes a substrate placement process 210, a tension application process 220, and a plasma generation process 230. In some other embodiments, the sputtering method 200 may optionally further comprise a magnetic field application process 240. In some other embodiments, the sputtering method 200 may optionally further include a substrate outgasing process 250.

In the substrate placement process 210, the flexible substrate and the target 140 are disposed to face each other in the sputtering chamber 110 via the unwinding roller 120 and the winding roller 130 disposed opposite to each other.

In the tension applying process 220, a tension is applied to the substrate facing the target 140 so that the substrate maintains a predetermined distance from the target 140.

In the plasma generation process 230, a sputtering gas is injected into the chamber 110, and a voltage is applied between the substrate and the target 140 through the power source unit 170 to generate plasma in the chamber 110. In this case, one side of the target 140 is disposed opposite to the substrate, and a film is deposited on one side of the substrate by sputtering with the plasma.

The substrate placement process 210 includes a substrate feeding process (not shown) for rolling the unwinding roller 120 and supplying the substrate to the chamber 110, a substrate recovery process for rolling the winding roller 130, (Not shown).

The tension applying process 220 is a process of applying a tension to the first roller 150 and the second roller 160 spaced apart from each other between the unwinding roller 120 and the winding roller 130 in the chamber 110, A first substrate transfer process (not shown) in which the first roller 150 is rolled to supply the substrate from the unwinding roller 120 to the second roller 160, And a second substrate transfer process (not shown) in which the second roller 160 is rolled to supply the substrate provided by the first roller 150 to the winding roller 130.

In this case, the substrate portion-hereinafter referred to as the deposition region, located between the first roller 150 and the second roller 160 in the substrate through the rolling of the first roller 150 and the second roller 160, The deposition region can be maintained at the predetermined distance from the target 140 by applying a tensile force to the target 140. The tension of the deposition area can be adjusted through adjustment of the relative rolling speed of the second roller 160 to the first roller 150 or adjustment of the distance between the first roller 150 and the second roller 160 have. The detailed description thereof will be omitted for the sake of simplicity in the description given above with reference to FIGS. 2 to 4.

At this time, a third free roller 156 may be disposed in the chamber 110 between the first roller 150 and the second roller 160. The third free rollers 156 may maintain the deposition region substantially parallel to the sputtered surface of the target 140 during the application of the tension.

In one embodiment, the roller contact process may include moving the substrate (or the target 140) to at least one of a first roller 150, a second roller 160, Or in a direction away from the substrate (or the target 140). In this case, the roller movement process may include a conveying mechanism (not shown) coupled to the moving roller to move the moving roller in a direction toward the substrate (or target 140) or in a direction away from the substrate (or target 140) Time). The moving distance may be controlled by moving the moving roller through the conveying mechanism to adjust at least one of the predetermined distance between the deposition area and the target 140, the tension applied to the deposition area, and combinations thereof.

The chamber 110 is provided with a first free roller 152 disposed between the unwinding roller 120 and the first roller 150 and a second free roller 152 disposed between the second roller 160 and the winding roller 130, A free roller 162 may be disposed.

In this case, in the first substrate transfer process, the first roller 150 is rolled from the first free rollers 152 supplied with the substrate from the unwinding roller 120, and the substrate is supplied to the second roller 160, As shown in FIG. In the second substrate transfer process, the second roller 160 supplied with the substrate provided by the first roller 150 is rolled, and the substrate is supplied to the winding roller 130 via the second free roller 162 . ≪ / RTI >

At this time, the first free rollers 152 and the second free rollers 162 may be in contact with the one surface of the substrate, respectively. The portion of the first free roller 152 that is in contact with the one surface of the substrate is biased in the direction of the rotation axis of the first roller 150 by a predetermined distance from the portion of the first roller 150 that is in contact with the other surface of the substrate, The substrate provided to the first roller 150 through the first free roller 152 can be brought into close contact with the outer surface of the first roller 150. [ The portion of the second free roller 162 that contacts the one surface of the substrate is biased toward the rotational axis of the second roller 160 by a predetermined distance from the portion of the second roller 160 that is in contact with the other surface of the substrate, And the substrate supplied to the second free rollers 162 through the second roller 160 can be brought into close contact with the outer surface of the second roller 160. That is, the substrate is supplied to the first roller 150 through the first free rollers 152 and the second free rollers 162 and is discharged from the second roller 160, The roller 160 can be brought into contact with the substrate well.

In addition, the chamber 110 is disposed outside the first roller 150 and the second roller 160. At least a part of the inner surface of the first roller 150 and the second roller 160 is in close contact with the first roller 150 and the second roller 160, A closed-loop shaped belt 154 that rotates according to the rolling of the roller 150 and the second roller 160 may be disposed. In this case, the tension of the belt 154 is adjusted by adjusting the relative rolling speed of the second roller 160 relative to the first roller 150 or adjusting the distance between the first roller 150 and the second roller 160 Lt; / RTI > By contacting the outer surface of the belt 154 with the other side of the substrate, the tension in the deposition zone is applied by the tension of the belt 154 to maintain the deposition zone at the predetermined distance from the target 140 have.

In one embodiment, the roller contact process may include moving the substrate (or the target 140) to at least one of a first roller 150, a second roller 160, Or in a direction away from the substrate (or the target 140). In this case, the roller movement process may include a conveying mechanism (not shown) coupled to the moving roller to move the moving roller in a direction toward the substrate (or target 140) or in a direction away from the substrate (or target 140) Time).

The belt 154 is moved by moving the moving roller through the transport mechanism and the predetermined distance between the deposition area and the target 140 through movement of the belt 154, And a combination thereof.

Meanwhile, in the chamber 110, a heater 180 may be disposed between the unwinding roller 120 and the first roller 150. In this case, the substrate supplying process may include a step of supplying the substrate to the chamber 110 by rolling the unwinding roller 120, supplying the substrate to the heater 180, and then supplying the substrate to the chamber 110 by the heater 180. At this time, the heater 180 heats the supplied substrate to remove at least one selected from moisture, impurities, and combinations thereof.

Meanwhile, the tension application process is performed simultaneously with or before or after the roller contact process, and the cooling or heating medium is supplied to at least one selected from the first roller 150, the second roller 160, And a temperature setting process for performing the temperature setting process. The temperature of the deposition region can be maintained or adjusted to a predetermined temperature through the temperature setting process.

The magnetic field applying process 240 may be performed before or after the plasma generating process 230. The magnetic field applying process 240 is disposed opposite to the other surface of the target 140 and generates a magnetic field to capture electrons in the plasma to a region adjacent to the one surface of the target 140 May be performed by a magnet array 190 that increases the electron density in the electron trap region to increase the density of the plasma in the electron trap region. The magnet array 190 extends in a direction substantially perpendicular to the one side of the target 140 and includes an inner magnet 190a with an N pole or S pole facing the target 140, An outer magnet 190b that extends in a direction substantially perpendicular to the inner magnet 190a and surrounds the inner magnet 190a and is opposite to the inner magnet 190a and is opposite to the target 140, And a nonmagnetic member 190c disposed between the inner magnet 190a and the outer magnet 190b and maintaining the gap between the inner magnet 190a and the outer magnet 190b. For example, the outer magnet 190b has a pattern protruding in the direction of the inner magnet 190a, the inner magnet 190a is spaced apart from the protruding pattern of the outer magnet 190b, And can have a shape of meander. In this case, the area of the electron trap region can be increased through the meander shape.

The substrate outgasing process 250 may be performed prior to the tension applying process 220 and the plasma generating process 230. The substrate outgoing process 250 sets the vacuum in the chamber 110 and then rolls the unwinding roller 120 and the winding roller 130 to provide the substrate from the unwinding roller 120 to the winding roller 130 And the process of recovering the substrate from the winding roller 130 to the unwinding roller 120 may be repeated at least once. At least one selected from moisture, impurities, and combinations thereof existing in the substrate can be removed through the substrate out gasing process 250.

Hereinafter, a sputtering method 200 using a roll-to-roll deposition apparatus disclosed in this specification will be described with reference to an experimental example. 10 is a view showing an example of the magnet array 190 used in the experiment of the sputtering method using the roll-to-roll deposition apparatus disclosed in this specification. 10 (a) shows a structure of the magnet array 190, and FIG. 10 (b) shows a plasma image according to the magnet array 190. FIG. 11 and 12 are SEM images of thin films deposited by the sputtering method disclosed herein. 13 and 14 are views showing an XRD image of a thin film deposited by the sputtering method disclosed in this specification.

The experiment proceeded as follows. It is to be understood that the following examples are not intended to limit the scope of the scope of the technology disclosed herein as an example to the scope of the following examples.

First, the magnet array 190 shown as an example in Fig. 10 is disposed adjacent to the other surface of the target 140. Fig. For the experiment, the width (a) of the magnet was designed to be about 18 mm, and the lengths b, c and d of the magnet were designed to be about 65.4 mm, about 260.8 mm and about 273.8 mm, respectively. The gap (e) between the magnets was about 23.7 mm. For the experiment, the width (a) of the magnet and the gap (e) between the magnets were set at a ratio of about 0.76: 1. In addition, the lengths b and d of the magnets were set to be larger than the width (about 100 mm) of the substrate used in the experiment. The substrate was conveyed through the unwinding roller 120 and the winding roller 130 in the direction transverse to the lengths b and d of the magnets.

In general, in the magnetron sputtering process, since the target particles are scattered by sputtering on one surface of the target 140 corresponding to the gap e between the magnets, the gap a between the magnets and the magnets e for effective sputtering of the target particles, The appropriate proportion of control is required. Experiments were carried out by adjusting the ratio of the width a of the magnet to the distance e between the magnets. As a result, the ratio of the width a of the magnet to the distance e between the magnets was about 0.7 to about 0.8: 1 , The deposition rate of the thin film deposited on the substrate by the sputtering at the target 140 and the uniformity of the thin film were found to be excellent. In this experiment, a ratio of about 0.76: 1 was selected from the ratio of the width (a) of the magnet to the distance (e) between the magnets, and the sputtering was performed. The bent part of the shape of the end of the magnet and the shape of the serpentine is made of a small circular magnet. Of course, it may be made of a right angle type magnet. The surface of the outer magnet 190b facing the target 140 was formed as an N pole and the surface of the inner magnet 190a facing the target 140 was formed as an S pole. Of course, the polarities of the outer magnet 190b and the inner magnet 190a may be mutually changed. N35 (NiCuNi Coating) having a magnetic field at the center of the magnet of about 11700 to about 12100 Gauss was used as the magnet. And disposed on the other side of the target 140 to generate a magnetic field of about 200 to about 600 Gauss on one side of the target 140. A relative position of the magnet array 190 relative to the target 140 was adjusted to produce a magnetic field of about 540 to about 580 Gauss on one side of the target 140 when the target 140 was non-metallic. When the target 140 is a metal, the relative position of the magnet array 190 with respect to the target 140 is adjusted to produce a magnetic field of about 200 to about 300 gauss on one surface of the target 140.

Next, a flexible substrate made of PET having a width of about 100 mm as a flexible substrate was wound around the unwinding roller 120 and the winding roller 130, and then the vacuum of the chamber 110 was set. The vacuum of the chamber 110 was set through a rotary pump to a vacuum of about 5 x 10 ^-2 torr and a vacuum of about 5 x 10 ^-6 torr through a turbo molecular pump (TMP).

After performing the substrate out gasing process 250 described above, the thin film deposition process is performed through the sputtering method 200 using the roll-to-roll deposition apparatus disclosed in the present specification under the process conditions shown in the following table. The distance between the substrate and the target 140 is determined by selecting the moving roller among the first roller 150, the second roller 160 and a combination thereof, and then moving the moving roller to the substrate (or the target 140) Or moving the moving roller in a direction away from the substrate (or the target 140). In this process, the first roller 150 and the second roller 160 abut the substrate and the speed of the first roller 150, the speed of the second roller 160, the speed of the first roller 150 and the second roller 160 160) to control the tension of the deposition region. Thereby enabling the deposition region to maintain a predetermined distance from the target 140.

(Experimental Example 1)

The above-described embodiments and measurement results are obtained by changing the process conditions while transferring the flexible substrate through the unwinding roller 120 and the winding roller 130 at about 150 mm / min using the ITO target 140. [ When the distance between the target 140 and the substrate was about 60 mm, it was confirmed that the thin film deposited on the substrate showed crystallinity. The table below shows the results of measuring the sheet resistance uniformity of the deposited thin film by repeating Example 2 in which the thin film exhibits a crystalline characteristic. The uniformity of the sputtering thin film deposited on the substrate can be measured by measuring the sheet resistance uniformity. The uniformity of sheet resistance was calculated using the formula [(Max-Min) / 2 (Average)] X 100. The sheet resistance measurement was carried out by uniformly dividing the width of the substrate having a width of about 100 mm into five equal parts and then measuring the sheet resistance at the center of each part. As a result of measurement, uniformity of 1.5% or less was obtained in all of the thin films deposited by repeating Example 2 five times. Through the techniques disclosed herein, it can be seen that much better results can be obtained compared to a uniformity criterion of about 5%, which is generally required for a thin film deposited on a substrate. Although not shown as a table, the results obtained by repeating the experiments of the remaining embodiments were similar to those shown below.

(Results of uniformity analysis)

In the following example, the distance between the target 140 and the substrate is maintained at about 60 mm, which is the condition of Embodiment 2, and the sputtering process is performed using the ITO target 140 while changing the film speed or the film winding speed It is a table showing conditions.

(Experimental Example 2)

The table below shows the results of measuring thin film properties such as sheet resistance, permeability, thickness, and crystallinity for the deposited thin films after depositing the thin films on the substrate under the above process conditions. It can be seen from the results below that the physical properties of the thin film deposited on the substrate vary depending on the distance between the substrate and the target 140, the transfer speed of the substrate, and the like.

(Physical Properties of Thin Film in Experimental Example 2)

11 and 12 are SEM images of thin films deposited under the conditions of Example 2-4 and Example 2-1, respectively, utilizing the sputtering method disclosed in the present specification. 13 and 14 are diagrams showing XRD images of thin films deposited under the conditions of Example 2-4 and Example 2-1, respectively, utilizing the sputtering method disclosed in this specification.

Through the sputtering method 200 using the roll-to-roll deposition apparatus disclosed in this specification, the transfer speed of the substrate, the distance between the substrate and the target 140, and the temperature applied to the substrate can be adjusted. Accordingly, the sputtering method 200 using the roll-to-roll deposition apparatus disclosed herein can control not only the sheet resistance, the transmittance, and the thickness of the sputtering thin film deposited on the substrate, . In addition, a sputtering thin film having a high uniformity can be deposited on the substrate, as supported by the above-mentioned experimental examples, through the sputtering method 200 using the roll to roll deposition apparatus disclosed in this specification.

From the foregoing it will be appreciated that various embodiments of the present disclosure have been described for purposes of illustration and that there are many possible variations without departing from the scope and spirit of this disclosure. And that the various embodiments disclosed are not to be construed as limiting the scope of the disclosed subject matter, but true ideas and scope will be set forth in the following claims.

100: roll-to-roll deposition apparatus
110: chamber
120: Unwinding roller
130: winding roller
140: target
150: first roller
152: first free roller
154: Closed loop belt
156: Third free roller
160: second roller
162: second free roller
170:
180: heater
182:
184: Cooling section
190: magnet array
192:
194:
194a:
194b:
194c:
194d:
210: substrate placement process
220: Tension application process
230: plasma generation process
240: magnetic field application process
250: Substrate outgassing course

Claims (11)

A substrate placement process for placing the flexible substrate and the target opposite to each other in the sputtering chamber through an unwinding roller and a winding roller disposed opposite to each other;
A tension applying step of applying a tension to the substrate facing the target so that the substrate maintains a predetermined distance from the target; And
And a plasma generating step of injecting a sputtering gas into the chamber and applying a voltage between the substrate and the target through a power supply unit to generate a plasma in the chamber,
Wherein the target is disposed on one side of the substrate, and depositing a film on one surface of the substrate by sputtering with the plasma,
The substrate placement process
A substrate feeding step of rolling the unwinding roller to supply the substrate to the chamber; And
And recovering the substrate by rolling the winding roller,
The tension application process
A roller contact process for bringing the first roller and the second roller spaced apart from each other between the unwinding roller and the winding roller into contact with the other surface of the substrate in the chamber;
A first substrate transferring step of rolling the first roller to supply the substrate from the unwinding roller to the second roller; And
And a second substrate transferring step of rolling the second roller to supply the substrate provided by the first roller to the winding roller,
Wherein a tension is applied to the substrate portion-hereinafter referred to as a deposition region, located between the first roller and the second roller in the substrate through the rolling of the first roller and the second roller, And a roll-to-roll deposition apparatus for maintaining the predetermined distance. The method according to claim 1,
Wherein the tension of the deposition area is controlled through adjustment of the relative rolling speed of the second roller relative to the first roller or adjustment of the distance between the first roller and the second roller. The method according to claim 1,
The roller contact process may include a roller movement process for moving at least one of the first roller, the second roller, and a combination thereof, i.e., a moving roller, in a direction toward or away from the target Including,
Wherein the roller movement process is performed through a transfer mechanism that is connected to the movement roller and moves the movement roller in a direction toward or away from the target,
And a roll-to-roll deposition apparatus capable of adjusting at least one selected from the predetermined distance between the deposition region and the target, the tension applied to the deposition region, and a combination thereof by moving the transfer roller through the transfer mechanism . The method according to claim 1,
Wherein the chamber is provided with a first free roller disposed between the unwinding roller and the first roller and a second free roller disposed between the second roller and the winding roller,
Wherein the first substrate transferring step includes the step of rolling the first roller from the first free roller supplied with the substrate from the unwinding roller to supply the substrate to the second roller,
Wherein the second substrate transferring step includes the step of providing the substrate to the winding roller via the second free roller by rolling the second roller supplied with the substrate provided by the first roller,
The first free roller and the second free roller being in contact with the one surface of the substrate,
Wherein a portion of the first free roller contacting the one surface of the substrate is biased in a direction of a rotational axis of the first roller by a predetermined distance from a portion of the first roller contacting the other surface of the substrate, Wherein the substrate provided on the first roller is in close contact with an outer surface of the first roller,
Wherein a portion of the second free roller contacting the one surface of the substrate is biased in a direction of a rotational axis of the second roller by a predetermined distance from a portion of the second roller contacting the other surface of the substrate, Wherein the substrate fed to the second free rollers is in close contact with the outer surface of the second roller. The method according to claim 1,
Wherein at least a part of the inner surface of the chamber is in close contact with the first roller and the second roller and rotates in accordance with the rolling of the first roller and the second roller A closed-loop belt is disposed,
The tension of the belt is regulated through adjustment of the relative rolling speed of the second roller to the first roller or adjustment of the distance between the first roller and the second roller,
Wherein the outer surface of the belt contacts the other surface of the substrate so that the tension of the deposition area is applied by the tension of the belt to maintain the deposition area at the predetermined distance from the target, Way. 6. The method of claim 5,
The roller contact process may include a roller movement process for moving at least one of the first roller, the second roller, and a combination thereof, i.e., a moving roller, in a direction toward or away from the target Including,
Wherein the roller movement process is performed through a transfer mechanism that is connected to the movement roller and moves the movement roller in a direction toward or away from the target,
Wherein the belt is moved by moving the moving roller through the conveying mechanism and selected from the predetermined distance between the deposition area and the target through the movement of the belt, the tension applied to the deposition area, and combinations thereof Wherein the sputtering apparatus is capable of controlling at least one of the sputtering method and the sputtering method. 7. The method according to any one of claims 1 to 6,
Wherein the chamber is provided with a heater between the unwinding roller and the first roller,
Wherein the substrate supplying step includes a step of rolling the unwinding roller to supply the substrate to the heater, and then supplying the substrate to the chamber by the heater,
Wherein the heater heats the supplied substrate to remove at least one selected from moisture, impurities, and combinations thereof existing in the substrate. 7. The method according to any one of claims 1 to 6,
Wherein the tension application process is performed at the same time as or before or after the roller contact process and includes a temperature setting process for supplying a cooling or heating medium to at least one of the first roller, the second roller, and a combination thereof, ,
And the temperature of the deposition region is maintained at a predetermined temperature through the temperature setting process. 7. The method according to any one of claims 1 to 6,
Wherein a third free roller is disposed in the chamber between the first roller and the second roller,
Wherein the third free rollers hold the deposition region so as to be substantially parallel to the sputtered surface of the target during the applying of the tension. 7. The method according to any one of claims 1 to 6,
And a magnetic field application process performed before and after the plasma generation process,
The magnetic field applying process is arranged opposite to the other surface of the target, and generates a magnetic field to capture electrons in the plasma to a region adjacent to the one surface of the target, hereinafter referred to as an electron trap region, And increasing the density to increase the density of the plasma in the electron trap region,
The magnet array
An inner magnet extending in a direction substantially perpendicular to the one surface of the target and having an N pole or an S pole opposite to the target;
An outer magnet extending in a direction substantially perpendicular to the one surface of the target and spaced apart from the inner magnet to surround the inner magnet and a magnetic pole opposite to the inner magnet is opposed to the target; And
And a non-magnetic member disposed between the inner magnet and the outer magnet, the non-magnetic member maintaining an interval between the inner magnet and the outer magnet,
Wherein the outer magnet has a pattern protruding in the direction of the inner magnet, the inner magnet is spaced apart from the protruding pattern of the outer magnet, and is alternately connected about the protruding pattern of the outer magnet, , meander)
Wherein the area of the electron trap region is increased through the shape of the meander. 7. The method according to any one of claims 1 to 6,
Wherein the unloading rollers and the winding rollers are rolled after the tension application process and the plasma generation process are performed and a vacuum is set in the chamber to provide the substrate from the unwinding rollers to the winding rollers, Further comprising: a substrate outgassing step of performing a process of withdrawing the substrate from the roller to the unwinding roller,
And removing at least one selected from water, impurities, and combinations thereof existing in the substrate through the substrate outgoing process.

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