KR20180009021A - Cleaning composition for removing oxide and method of cleaning using the same - Google Patents

Abstract

The present invention relates to a cleanser composition for removing oxide, consisting of a dicarboxylic acid compound, a sulfur-containing compound, an organic amine compound, and water. The present invention further relates to a cleansing method using the same. According to the present invention, it is possible to prevent corrosion on a lower metal film.

Description

TECHNICAL FIELD The present invention relates to a cleaning composition for removing oxides and a cleaning method using the same,

The present invention relates to a cleaning composition for removing oxides and a cleaning method using the same.

The organic light emitting diode is a self light emitting type device having a wide viewing angle, excellent contrast, fast response time, excellent luminance, driving voltage and response speed characteristics, and multi-coloring.

The organic light emitting device may have a structure in which a first electrode, an organic layer, and a second electrode are sequentially stacked on a substrate. The stacked structure of the organic light emitting devices may be formed by a deposition method using a mask. That is, the fine pattern of the organic layer may be formed by a deposition method using a metal mask, for example, a fine metal mask (FMM). However, since the first electrode and the second electrode do not need to form a fine pattern, they can be formed by a deposition method using an open mask.

Generally, the fine metal mask can be formed by processing a base material by applying a wet etching process or a laser irradiation process, and since the mask can be a medium for introducing contaminants into the deposition process, Is required. At this time, in the case of the wet etching process, impurities can be removed by rinsing the mask base material with a conventional cleaning liquid such as distilled water or alcohol.

However, when the mask base material is processed using the laser irradiation process, there is a problem that oxides formed naturally at the time of laser irradiation are not cleaned by the conventional cleaning liquid, and the oxides remain in the mask base material.

It is an object of the present invention to provide a cleaning composition for removing an oxide which can selectively remove oxides formed on the surface of a mask base material without damaging the mask base material and can suppress metal film corrosion under the oxide film.

Another object of the present invention is to provide a cleaning method using the cleaning composition for removing an oxide.

According to one aspect, a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; And water; and a cleaning composition for removing the oxide.

According to another aspect, there is provided a method of manufacturing a semiconductor device, comprising: preparing a mask material having an oxide; And a first cleaning step of bringing the cleaning composition for removing oxides into contact with the mask base material to remove oxides from the mask base material.

The cleaning composition for removing an oxide and the cleaning method using the same can selectively remove oxides formed on the surface of the mask base material and prevent corrosion of the underlying metal film without damaging the mask base material.

Figure 1 is a SEM photograph showing the surface of the Invar stick irradiated with laser before removing the oxide.
2 is an SEM photograph showing the surface of an Invar stick after dipping for 1 hour using the cleaning composition for removing an oxide of Production Example 1. Fig.
3 is a SEM photograph showing the surface of the Invar stick after dipping for 2 hours using the cleaning composition for removing an oxide of Production Example 1 and completing the cleaning according to Example 1. Fig.

Hereinafter, a cleaning composition for removing an oxide and a cleaning method using the cleaning composition according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, but may be embodied in various other forms without departing from the spirit of the present invention.

As used herein, the terms "comprises" or "having ", or the like, mean that the features or elements described herein are meant to be present and that excluding one or more other features or components no.

Hereinafter, the cleaning composition for removing an oxide and the cleaning method using the cleaning composition according to embodiments of the present invention will be described in detail.

The cleaning composition for removing an oxide according to an embodiment of the present invention may contain a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; And water.

The dicarboxylic acid compound in the cleaning composition for removing an oxide can provide an effect of cleaning the oxide by reacting with an oxide to be described later. For example, two carboxyl groups may be attached to the surface of an oxide film containing an oxide to remove the oxide film.

The dicarboxylic acid compound means an organic acid having two carboxyl groups (-COOH). According to one embodiment, the dicarboxylic acid compound may include, but is not limited to, oxalic acid. The dicarboxylic acid compound can increase the oxide cleaning effect by including two carboxyl groups.

The dicarboxylic acid compound can be used to a sufficient degree to selectively remove the oxide. For example, the content of the dicarboxylic acid compound is 0.01 wt% to 1 wt%, specifically 0.02 wt% to 0.7 wt%, more specifically 0.02 wt%, based on 100 wt% of the cleaning composition for removing an oxide. To 0.5% by weight.

When the dicarboxylic acid compound is within the above range, the cleaning composition for removing an oxide may have excellent cleaning ability without causing damage to the base material.

The sulfur-containing compound in the cleaning composition for removing oxides has the function of suppressing the corrosion of the metal film existing in the lower part after removing the oxide film.

The sulfur-containing compound means a compound containing at least one sulfur (S). According to one embodiment, the sulfur-containing compound may comprise a mercapto group (-SH) containing compound. For example, the sulfur-containing compound can be selected from the group consisting of 1-thioglycerol, dithioglycerol, 2-mercaptoethanol, 3-mercapto-1-propanol, thioglycolic acid, thioacetic acid, thiosalicylic acid, bis - dihydroxypropylthio) ethylene, or any combination thereof.

The sulfur-containing compound may be used to an extent sufficient to inhibit corrosion of the underlying metal film. For example, the content of the sulfur-containing compound is 0.01 wt% to 1.5 wt%, specifically 0.04 wt% to 1.1 wt%, more specifically 0.04 wt% to 1 wt%, based on 100 wt% % ≪ / RTI > by weight.

When the sulfur-containing compound is within the above range, the cleaning composition for removing an oxide may have excellent cleaning ability while preventing corrosion of a lower metal film after removal of an oxide film.

Among the cleaning compositions for removing oxides, the organic amine compound plays a role of a pH controlling agent as well as a function of suppressing the corrosion of the metal film existing in the lower part after removing the oxide film.

The organic amine compound means an organic compound containing an amine group. According to one embodiment, the organic amine compound may comprise an alkanolamine. For example, the organic amine compound may be selected from monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, dipropanolamine, tripropanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine, 2- Ethoxy) ethanol, N, N-dimethylethanolamine, N, N-diethylethanolamine, N, N-dipropylethanolamine, N, N-dibutylethanolamine, N-methylethanolamine, But are not limited to, amine, N-propylethanolamine, N-butylethanolamine, N-methyldiethanolamine, or any combination thereof.

The content of the organic amine compound is not particularly limited and can be used to the extent that the pH can be controlled according to the contents of other compounds while being sufficient to suppress corrosion of the underlying metal film. For example, the content of the organic amine compound may be 0.01 to 1% by weight, specifically 0.02 to 0.7% by weight, more specifically 0.02 to 0.5% by weight, based on 100% by weight of the cleaning composition for removing oxides. % ≪ / RTI > by weight.

When the organic amine compound is within the above range, the removal of the oxide film is facilitated and the possibility of corrosion of the underlying metal film can be reduced.

The cleaning composition for removing an oxide may contain residual water in an amount of 100% by weight based on 100% by weight of the cleaning composition for removing an oxide. The water may be deionized water or ultrapure water with the impurities being minimized.

For example, the resistivity value of the water may be 18 M? / Cm or more. As another example, the resistivity value of the water may range from 18 MΩ / cm to 30 MΩ / cm.

Any combination of constituent components or constituent components of the above-described cleaning composition for removing oxides described above may be allowed.

For example, the cleaning composition for removing an oxide includes a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; Wherein the content of the dicarboxylic acid compound is in the range of 0.01 wt% to 1 wt% based on 100 wt% of the cleaning composition for removing the oxide, and the content of the sulfur-containing compound is 0.01 By weight to 1.5% by weight.

According to one embodiment, the cleaning composition for removing an oxide includes a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; Wherein the content of the dicarboxylic acid compound is in the range of 0.01 wt% to 1 wt% based on 100 wt% of the cleaning composition for removing the oxide, and the content of the sulfur-containing compound is 0.01 By weight to 1.5% by weight, and the content of the organic amine compound may range from 0.01% by weight to 1% by weight.

For example, the cleaning composition for removing an oxide includes a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; Wherein the content of the dicarboxylic acid compound is in the range of 0.02 wt% to 0.7 wt% and the content of the sulfur-containing compound is 0.04 wt% or less based on 100 wt% of the cleaning composition for removing an oxide. By weight to 1.1% by weight, and the content of the organic amine compound may be in a range of 0.02% by weight to 0.7% by weight.

As another example, the cleaning composition for removing an oxide includes a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; Wherein the content of the dicarboxylic acid compound is in the range of 0.02 wt% to 0.5 wt%, and the content of the sulfur-containing compound is 0.04 wt% or less based on 100 wt% of the cleaning composition for removing an oxide. And the content of the organic amine compound may be in the range of 0.02 wt% to 0.5 wt%, but is not limited thereto.

According to one embodiment, it is advantageous to adjust the pH of the cleaning composition for removing oxides to within a certain range in order to remove the oxide film and prevent corrosion of the lower film. When the pH range of the cleaning composition for removing oxides is adjusted to be basic, corrosion of the lower film can not be sufficiently prevented, and surface roughness or the like is damaged.

For example, the pH of the cleaning composition for removing the oxide may range from 2.5 to 5.5. For example, the pH of the cleaning composition for removing an oxide may range from 2.9 to 5.0, but is not limited thereto.

On the other hand, the cleaning composition for removing oxides may include at least one of iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo) Alloys, Inconel alloys, Kovar alloys, and Invar alloys.

For example, oxides of iron (Fe), nickel (Ni) or cobalt (Co) in the above metals may be reduced according to the following formula 1, but are not limited thereto:

<Formula 1>

The cleaning composition for removing an oxide according to an embodiment of the present invention comprises the dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; And water of the remainder, the reduction reaction of the oxide is induced, and the rate of reaction with the oxide is controlled to selectively remove the oxide. In addition, the cleaning composition for removing an oxide can prevent corrosion of a metal film existing in the lower part after removing the oxide film containing the oxide.

The cleaning composition for removing the oxide may be prepared by a conventionally known method.

For example, the cleaning composition for removing an oxide may be prepared by mixing the dicarboxylic acid compound, the sulfur-containing compound, the organic amine compound, and water so that the total weight of the components is 100 wt%. The cleaning composition for removing an oxide may contain other optional components within a range not affecting its performance. The components may be mixed in any order, as long as there are no particular problems such as undesired reactions or precipitates occurring, and any of the two components may be premixed and then the remaining components mixed, or the components may be mixed simultaneously .

Hereinafter, a cleaning method according to another embodiment of the present invention will be described.

The cleaning method includes: preparing a mask material having an oxide; And a first cleaning step of bringing the cleaning composition for removing oxides into contact with the mask base material to remove oxides from the mask base material.

The mask base material may be at least one selected from the group consisting of Fe, Co, Cr, Mn, Ni, Ti, Mo, SUS alloy, Inconel alloy, Kovar alloys, and Invar alloys. &Lt; RTI ID = 0.0 &gt; [0031] &lt; / RTI &gt;

For example, the mask preform may be an Invar alloy. The Invar alloy has iron (Fe) and nickel (Ni) as its main components, has less thermal expansion than the SUS alloy, and does not significantly reduce tension even at high temperatures.

The mask base material may be processed by laser irradiation.

For example, the mask base material may be processed by irradiating laser light having an energy density ranging from 50 mJ / cm ² to 5000 mJ / cm ² . Specifically, the mask base material may be processed by irradiating laser light having an energy density ranging from 200 mJ / cm ² to 1000 mJ / cm ² .

The mask base material may be processed by irradiating laser light for 1 minute to 1440 minutes. For example, the mask base material may be processed by irradiating laser light for 60 minutes to 720 minutes.

The oxide may be formed naturally upon laser irradiation of the mask base material.

For example, the oxide may be at least one selected from the group consisting of iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni) And may be an oxide in which at least one metal selected from titanium (Ti), molybdenum (Mo), SUS (Steel Use Stainless) alloy, Inconel alloy, Kovar alloy and Invar alloy is oxidized.

For example, the oxide may be an oxide of Invar alloy, but is not limited thereto.

For example, the mask base material may include, but is not limited to, Invar alloy and Invar alloy oxides.

A detailed description of the cleaning composition for removing the oxide is given in this specification.

In the first cleaning step, the oxides may be removed by contacting the cleaning composition for removing oxides with the mask base material, peeling the mask base material after the reduction of the oxides.

The first cleaning step may include, but is not limited to, a spraying method of spraying the cleaning composition for removing an oxide on the mask base material, a method of dropping the cleaning composition for removing an oxide on the mask base material, A spinning method in which the cleaning composition for oxide removal is filled in a cleaning tank, and a dipping method in which the mask base material is immersed, or the like.

For example, the first rinsing step may be carried out using a dipping method at a temperature ranging from 20 ° C to 60 ° C and a time ranging from 1 minute to 360 minutes. When the first cleaning step is performed in the temperature range and the time range described above, it may be preferable since it improves the detergency against the oxide and minimizes damage to the mask base material.

According to another embodiment of the present invention, the cleaning method includes a second cleaning step of cleaning the mask base material using distilled water; And a third cleaning step of cleaning the mask base material using a first alcohol.

For example, the cleaning method may sequentially perform the second cleaning step and the third cleaning step after the first cleaning step.

As another example, the first alcohol may be selected from the group consisting of methanol, ethanol, pentanol, 2-methyl-2-butanol, 3-methyl-2-butanol, n- propanol, isopropanol, butanol, isobutyl alcohol, Propanol, ethylene glycol, propylene glycol, diethylene glycol, glycerin, dipropylene glycol, or any combination thereof. [0033] The term &quot; propylene glycol &quot; For example, the first alcohol may be isopropyl alcohol.

In the second cleaning step, the mask base material may be cleaned using the spray method, the spin method, or the dipping method described above.

For example, the cleaning step may be carried out using a dipping method at a temperature ranging from 20 ° C to 60 ° C and a time ranging from 1 minute to 360 minutes.

If the second cleaning step is performed within the temperature and time range, the cleaning effect of the oxide can be maximized.

In the third cleaning step, the mask base material may be cleaned using the spray method, the spin method, or the dipping method.

For example, the cleaning step may be performed using the dipping method at a temperature ranging from 20 ° C to 60 ° C and a time ranging from 10 seconds to 360 minutes.

When the third cleaning step is performed within the temperature and time range, the cleaning effect of the oxide can be maximized.

According to one embodiment, the first cleaning step or the second cleaning step may include treating the cleaning composition for removing oxides with ultrasonic waves ranging from 10 Hz to 300 Hz.

According to another embodiment, in the cleaning method, the first cleaning step may further include stirring the cleaning composition for removing an oxide.

The stirring step may be performed in the range of 10 rpm to 700 rpm.

According to another embodiment, the cleaning method may further include drying the mask base material after the third cleaning step. The step of drying the mask base material may be performed by a conventionally known method. For example, it can be dried using a nitrogen gas.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples.

Example

Production Examples 1 to 12: Preparation of Cleaning Composition for Removing Oxide (Preparation of Cleaning Solutions 1 to 12)

Were mixed with the components and contents shown in Table 1 below to prepare cleaning solutions 1 to 12.

Oxalic acid
(weight%) Sulfur-containing compound
(weight%) Organic amine compound
(weight%) water
(weight%) Other
ingredient
(weight%) pH Manufacturing example  One Cleaning solution 1 0.03 1-thioglycerol 0.045 N-methylethanolamine 0.03 Balance - 5.0 Manufacturing example  2 Cleaning solution 2 0.03 1-thioglycerol 0.045 Monoethanolamine 0.015 Balance - 4.9 Manufacturing example  3 Cleaning solution 3 0.1 1-thioglycerol 0.15 N-methylethanolamine 0.1 Balance - 4.3 Manufacturing example  4 Cleaning solution 4 0.1 1-thioglycerol 0.15 Monoethanolamine 0.05 Balance - 4.3 Manufacturing example  5 Cleaning solution 5 0.5 1-thioglycerol 0.75 N-methylethanolamine 0.5 Balance - 3.4 Manufacturing example  6 Cleaning solution 6 0.5 1-thioglycerol 0.75 Monoethanolamine 0.25 Balance - 3.5 Manufacturing example  7 Cleaning solution 7 0.7 1-thioglycerol 1.05 N-methylethanolamine 0.7 Balance - 2.9 Manufacturing example  8 Cleaning solution 8 0.7 1-thioglycerol 1.05 Monoethanolamine 0.35 Balance - 3.0 Manufacturing example  9 Cleaning solution 9 0.5 3-mercapto-1-propanol 0.75 N-methylethanolamine 0.5 Balance - 3.6 Manufacturing example  10 Cleaning solution 10 0.5 3-mercapto-1-propanol 0.75 Monoethanolamine 0.25 Balance - 3.6 Manufacturing example  11 Cleaning solution 11 0.5 1-thioglycerol 0.6 N-methylethanolamine 0.5 Balance - 3.5 Manufacturing example  12 Cleaning solution 12 - 1-thioglycerol 0.75 N-methylethanolamine 0.5 Balance Acetic acid (0.5) 3.7

Production Example 13: Preparation of laser irradiated Invar stick

An Invar stick (width * length * thickness: 10 cm * 10 cm * 20 μm) was placed on a stage in an LPM (Laser Patterned Mask) facility under normal temperature and atmospheric pressure conditions and the surface of the Invar stick was laser- 40 占 퐉 in width, and 40 占 퐉 in length, respectively). The processed Invar stick was observed with SEM, and the results are shown in Fig.

Example 1: Cleaning of the Invar stick of Production Example 13 using the cleaning liquid 1

2000 g of the cleaning solution 1 of Preparation Example 1 was poured into a 5000 ml cleaning bath and the Invar stick of Preparation Example 13 was treated with ultrasonic at 60 Hz in the washing bath at 25 캜 for 10 seconds and then stirred at 350 rpm for 2 hours . Thereafter, the Invar stick was taken out and immersed in a water bath containing 5000 g of distilled water for 1 minute. At this time, ultrasonic was applied for 60 seconds at 300 Hz for 60 seconds. Thereafter, the Invar stick was taken out and immersed in a water bath containing 5000 g of isopropyl alcohol for 10 seconds. Thereafter, the Invar stick was taken out and dried using a nitrogen gas to complete the cleaning of the Invar stick.

Examples 2 to 11: Cleaning of Invar stick of Production Example 13 using cleaning liquids 2 to 11

The Invar stick of Production Example 13 was washed using the same method as in Example 1 except that the cleaning liquids 2 to 11 were used instead of the cleaning liquid 1 of Production Example 1. [

Comparative Example 1: Cleaning of the Invar stick of Production Example 13 using the cleaning liquid 12

The Invar stick of Production Example 13 was cleaned in the same manner as in Example 1, except that the cleaning liquid 12 was used instead of the cleaning liquid 1 of Production Example 1. [

Evaluation example 1

The Invar sticks cleaned in accordance with Examples 1 to 11 and Comparative Example 1 were analyzed for oxide film removability on the Invar stick surface using EDX and the corrosion resistance of the lower film after the oxide film removal was evaluated using SEM, The results are shown in Table 2 below.

Oxide film Removability Bottom membrane  causticity Example 1 Cleaning solution 1 Great No corrosion Example 2 Cleaning solution 2 Great No corrosion Example 3 Cleaning solution 3 Great No corrosion Example 4 Cleaning solution 4 Great No corrosion Example 5 Cleaning solution 5 Great No corrosion Example 6 Cleaning solution 6 Great No corrosion Example 7 Cleaning solution 7 Great No corrosion Example 8 Cleaning solution 8 Great No corrosion Example 9 Cleaning solution 9 Great No corrosion Example 10 Cleaning solution 10 Great No corrosion Example 11 Cleaning solution 11 Great No corrosion Comparative Example 1 Cleaning solution 12 Bad Corrosion

The superior oxide film removing ability means that the composition of the oxygen atoms on the surface of the Invar stick is 0 atomic% or less and the oxide film removing ability is poor means that it is more than 0 atomic%.

'No corrosion' means that there is no crack and pin-hole corrosion on the surface of Invar stick due to SEM image, and 'Corrosion' means that crack and pin-hole corrosion .

Referring to Table 2, in the case of Examples 1 to 11, oxalic acid which is a dicarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; And the remainder water; acetic acid which is a monocarboxylic acid compound; Sulfur-containing compounds; Organic amine compounds; And the remainder of the water, compared to Comparative Example 1, and it can be seen that the corrosion of the lower film did not occur. Therefore, it is confirmed that the cleaning was performed according to Examples 1-11 using the cleaning liquids 1 to 11, the oxide was selectively removed from the Invar stick of Production Example 13, and the lower film corrosion did not occur.

Evaluation example 2

The Preparation Example Invar stick was washed with the cleaning solution 1 prepared according to Preparation Example 1. (1) Invar stick irradiated with laser before removing the oxide, (2) Invar stick in Production Example 13 was immersed in the cleaning bath at a temperature of 25 캜 for 1 hour, ( 3) The Invar stick cleaned using the above Example 1 was evaluated. The element composition ratio of the surface of the oxide film was analyzed using EDX, and the results are shown in Table 3 below. Further, the corrosion of the lower film after the removal of the oxide film was evaluated using an SEM photograph, and the results are shown in FIGS. 1 to 3.

(One)
Before oxide removal (2)
Immersion for 1 hour (3)
2 hours immersion C weight% 23.29 58.76 atom% 51.78 93.86 O weight% 14.47 21.88 0 atom% 41.41 36.51 0 Fe weight% 15.51 10.35 6.90 atom% 12.71 4.95 2.37 Ni weight% 49.15 2.14 1.73 atom% 35.41 0.97 0.57 Pt weight% 20.86 42.34 32.62 atom% 10.47 5.79 3.21

Referring to Table 3, the composition ratio of oxygen atoms was slightly reduced when immersed for 1 hour as compared with the Invar stick irradiated with laser before removing the oxide, immersed for 2 hours and washed through the cleaning method of the present invention , It can be confirmed that oxygen atoms are significantly reduced.

Also, referring to FIGS. 1 to 3, before the oxide is removed, an Invar stick irradiated with laser is formed with an oxide on its surface (see FIG. 1), but when it is immersed for 1 hour, the oxide is partially removed (Refer to FIG. 3). When the cleaning is completed according to the cleaning method of the present invention, the oxide is selectively completely removed, and the lower film is also undamaged and has a smooth surface (see FIG. 3).

Claims (20)

Dicarboxylic acid compounds;
Sulfur-containing compounds;
Organic amine compounds; And
A cleaning composition for removing an oxide comprising water. The method according to claim 1,
Wherein the dicarboxylic acid compound comprises oxalic acid. The method according to claim 1,
Based on 100 weight% of the cleaning composition for removing an oxide,
Wherein the content of the dicarboxylic acid compound is in the range of 0.01 wt% to 1 wt%. The method according to claim 1,
The sulfur-containing compound is preferably selected from the group consisting of 1-thioglycerol, dithioglycerol, 2-mercaptoethanol, 3-mercapto-1-propanol, thioglycolic acid, thioacetic acid, thiosalicylic acid, bis Propylthio) ethylene, or any combination thereof. The method according to claim 1,
Based on 100 weight% of the cleaning composition for removing an oxide,
And the content of the sulfur-containing compound is in the range of 0.01 wt% to 1.5 wt%. The method according to claim 1,
The organic amine compound may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, dipropanolamine, tripropanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine, 2- (2-aminoethoxy) , N, N-dimethylethanolamine, N, N-diethylethanolamine, N, N-dipropylethanolamine, N, N-dibutylethanolamine, N-methylethanolamine, N- Propylethanolamine, propylethanolamine, N-butylethanolamine, N-methyldiethanolamine, or any combination thereof. The method according to claim 1,
Based on 100 weight% of the cleaning composition for removing an oxide,
Wherein the content of the organic amine compound is in the range of 0.01 wt% to 1 wt%. The method according to claim 1,
Based on 100 weight% of the cleaning composition for removing an oxide,
The content of the dicarboxylic acid compound ranges from 0.01 wt% to 1 wt%
The content of the sulfur-containing compound is in the range of 0.01 wt% to 1.5 wt%
Wherein the content of the organic amine compound is in the range of 0.01 wt% to 1 wt%. The method according to claim 1,
Based on 100 weight% of the cleaning composition for removing an oxide,
The content of the dicarboxylic acid compound ranges from 0.02 wt% to 0.7 wt%
The content of the sulfur-containing compound is in the range of 0.04 wt% to 1.1 wt%
Wherein the content of the organic amine compound is in the range of 0.02 wt% to 0.7 wt%. The method according to claim 1,
Wherein the pH of the cleaning composition for removing an oxide is in the range of 2.5 to 5.5. Preparing a mask material having an oxide; And
A cleaning method comprising: a first cleaning step of bringing a cleaning composition for removing an oxide according to any one of claims 1 to 10 into contact with the mask base material to remove oxides from the mask base material. 12. The method of claim 11,
The mask base material may be at least one selected from the group consisting of Fe, Co, Cr, Mn, Ni, Ti, Mo, SUS alloy, Inconel alloy, Kovar alloy, and Invar alloy. 12. The method of claim 11,
Wherein the oxide is naturally formed upon laser irradiation of the mask base material. 12. The method of claim 11,
Wherein the first cleaning step is carried out by bringing the oxide removing composition into contact with the mask base material by using a spraying method, a spin coating method, or a dipping method. 12. The method of claim 11,
Wherein the first cleaning step is performed using a dipping method at a temperature ranging from 20 DEG C to 60 DEG C and a time range from 1 minute to 360 minutes. 12. The method of claim 11,
After the first cleaning step,
A second cleaning step of cleaning the mask base material using distilled water; And
A third cleaning step of cleaning the mask base material using a first alcohol;
The cleaning method further comprising at least one of the following. 17. The method of claim 16,
The first alcohol may be selected from the group consisting of methanol, ethanol, pentanol, 2-methyl-2-butanol, 3-methyl-2-butanol, n-propanol, isopropanol, butanol, isobutyl alcohol, Wherein the solvent is selected from the group consisting of propanol, hexanol, cyclohexanol, benzyl alcohol, propyl alcohol, ethylene glycol, propylene glycol, diethylene glycol, glycerin, dipropylene glycol or any combination thereof. 17. The method of claim 16,
After the first cleaning step, the second cleaning step and the third cleaning step in order. 17. The method of claim 16,
The first cleaning step or the second cleaning step
Treating the cleaning composition for removing oxides with ultrasonic waves in a range of 10 Hz to 300 Hz. 17. The method of claim 16,
Wherein the first cleaning step comprises:
And agitating the cleaning composition for removing an oxide.

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