KR20170139675A - Diffusion barriers for oscillation corrections, measurement assemblies for measuring deposition rates and methods therefor - Google Patents

Abstract

Is a detection element for a measurement assembly adapted to measure the rate of deposition of evaporated material on a substrate. The detection element includes: an oscillation correction for detecting a deposition rate; And a barrier layer comprising a barrier material covering at least a portion of the oscillation crystal, the barrier layer being configured to prevent the vaporized material from diffusing into the oscillation crystal.

Description

Diffusion barriers for oscillation corrections, measurement assemblies for measuring deposition rates and methods therefor

[0001] This disclosure relates to oscillation crystals having diffusion barriers, measurement assemblies for measuring the deposition rate of vaporized materials, and methods for measuring the deposition rate of vaporized materials . This disclosure is particularly directed to measurement assemblies and methods for measuring the deposition rate of vaporized organic materials.

[0002] Organic evaporators are tools for the fabrication of a wide range of devices, such as, for example, organic photovoltaic (OPV) devices and organic light-emitting diodes (OLEDs). OLEDs are special types of light emitting diodes in which the emissive layer comprises a thin film of certain organic compounds. OLEDs (organic light emitting diodes) are used in the manufacture of television screens, computer monitors, mobile phones, other portable devices, etc., for displaying information. OLEDs can also be used for general spatial illumination. The possible viewing angles, brightness, and range of colors with OLED displays is greater than those of traditional LCD displays because OLED pixels emit light directly and do not carry backlight. Therefore, the energy consumption of OLED displays is significantly less than the energy consumption of traditional LCD displays. The fact that OLEDs can be fabricated on flexible substrates also results in additional applications.

[0003] The functionality of OPV devices and OLEDs depends on the coating thickness of the organic material. This thickness should be within a predetermined range. In the fabrication of OPV devices and OLEDs, the deposition rate at which the coating with the organic material is affected is controlled to be within a predetermined tolerance range. In other words, the deposition rate of the organic vaporizer must be thoroughly controlled in the fabrication process.

[0004] In view of this, in the case of OPV and OLED applications as well as other evaporation processes, high accuracy of the deposition rate over a relatively long period of time is required. There are a plurality of measurement systems available for measuring the deposition rate of the evaporators. However, these measurement systems suffer from insufficient accuracy and / or insufficient stability over the required time period.

[0005] Therefore, there is a continuing need to provide improved deposition rate measurement systems and deposition rate measurement methods.

[0006] In view of the foregoing, in accordance with one aspect of the present disclosure, there is provided a detection element for a measurement assembly adapted to measure a deposition rate of evaporated material on a substrate. The sensing element includes: a barrier layer comprising a barrier material covering at least a portion of the oscillation crystal, the oscillation crystal being configured to detect an evaporation rate and to prevent the evaporated material from diffusing into the oscillation crystal.

[0007] According to a further embodiment of the present disclosure, there is provided a measurement assembly for measuring a deposition rate of evaporated material on a substrate. The measurement assembly includes: a detection element as described above, and an opening having an opening configured to expose a barrier layer of the detection element to the vaporized material. The sensing element is arranged in the measurement assembly such that the barrier layer extends beyond the opening of the opening.

[0008] According to yet another embodiment of the present disclosure, a method of measuring the deposition rate of evaporated material on a substrate is provided. The method includes: providing a measurement assembly having a sensing element as described above; and measuring the deposition rate of the evaporated material of the first layer using a measurement assembly, wherein the layer of vaporized material Is deposited on the substrate, a barrier layer is provided on the oscillation crystal phase.

[0009] According to still further embodiments of the disclosure, the detection element may be pre-treated. In embodiments of the invention, the pre-processed detection element may refer to a pre-processed oscillation modification of the detection assembly to detect the deposition rate. The term "pre-treated " refers to a barrier layer comprising a barrier material that covers at least a portion of the oscillation crystal, configured to prevent the vaporized material from diffusing into the oscillation crystal. According to embodiments herein, the barrier layer is applied to the oscillation correction before the oscillation correction detects the deposition rate of the evaporated material.

[0010] Further aspects, advantages and features of the present disclosure are apparent from the dependent claims, the detailed description, and the accompanying drawings.

[0011] Some of the above-mentioned embodiments will be described in more detail in the following description of exemplary embodiments, with reference to the following drawings.
[0012] FIG. 1 illustrates a schematic diagram of a measurement assembly adapted to measure the deposition rate of evaporated material on a substrate, in accordance with embodiments described herein;
[0013] FIG. 2 shows a schematic plan view of the measurement assembly shown in FIG. 1, in accordance with embodiments of the present disclosure;
[0014] Figures 3A-3C illustrate schematic diagrams of evaporation sources according to embodiments of the present disclosure;
[0015] Figure 4 shows a schematic plan view of a deposition apparatus for applying evaporated material to a substrate in a vacuum chamber, in accordance with embodiments described herein; And
[0016] FIG. 5 schematically illustrates a method for measuring the deposition rate of vaporized material on a substrate, in accordance with embodiments herein.

[0017] Reference will now be made in detail to various embodiments of the present disclosure, and examples of one or more of the various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In the following, only the differences for the individual embodiments will generally be described. Each example is provided as an illustration of the present disclosure and is not meant as a limitation of the present disclosure. Further, the features illustrated or described as part of one embodiment may be used with other embodiments, or may be used for other embodiments, to create further embodiments. The detailed description is intended to cover such modifications and variations.

[0018] In this disclosure, the term "oscillation correction" as used herein may refer to modifications that show, for example, piezoelectric properties. Non-limiting examples of natural and synthetic origin oscillation crystals as used herein include, for example, quartz, langasite, berlinite, and gallium orthophosphate. . ≪ / RTI >

[0019] In general, the expression "oscillation correction for measuring the deposition rate" as used herein refers to an oscillation correction of the deposited material per unit area, by measuring the change in frequency of the oscillation crystal resonator over time As the oscillation correction for measuring the change in mass of the oscillator. Without limiting the scope, the oscillation modification in this disclosure can be understood as a quartz crystal resonator. More specifically, "oscillation correction for measuring the deposition rate" can be understood as quartz crystal microbalance (QCM). QCMs (also referred to as quartz monitors or quartz resonators) or other so-called piezo microbalances can be used to determine the deposition rate of evaporated material on the surface, as discussed above . In the embodiments herein, the measured deposition rate of the evaporated material may also be referred to as coating rate.

[0020] Over the past few years, the use of QCMs has increased in emerging organic light emitting diode (OLED) manufacturing industries. OLED processes generally employ the use of exotic organic materials that include dopants with metal atoms such as iridium (Ir) or platinum (Pt). These metals can diffuse into the oscillation crystal, or can be absorbed by the oscillation crystal, leading to impediments in the measurement assembly. The in-diffusion or absorption of metals into the oscillation crystal is highly undesirable, for example, because this may affect the measurement accuracy of the QCM. In OLED manufacturing processes, the measurement inaccuracies of the QCM can cause certain problems. In general, the OLED materials are very light and the deposited layers are usually very thin, so the associated mass load on the QCM is relatively small. Any measurement inaccuracies for the deposition rate can distort the amount of deposited material beyond an acceptable level of tolerance, leading to unwanted changes in the properties of the OLED, for example, in high-quality display manufacture. In addition, if an oscillation modification failure occurs during the deposition of a particular layer in a multilayer deposition process, it may be necessary to scrap the entire work product with substantial loss of investment.

[0021] According to embodiments herein, the oscillating crystal for use in a measurement assembly adapted to measure the rate of deposition of evaporated material on a substrate may include a thin barrier layer. The thin barrier layer may cover at least a portion of the surface of the oscillation crystal. In embodiments of the present disclosure, oscillation modification with a barrier layer may also be referred to as a "detection element ". According to embodiments herein, the detection element may be a pre-processed detection element. The term " pre-processed detection element " used in describing the embodiments of the present application is intended to encompass a wide variety of materials that can be used to detect the deposition rate of evaporated material deposited on a substrate, Layer should be understood as a deposited detection element. In embodiments of the invention, the pre-processed detection element has a barrier material that has a barrier material deposited on the oscillation crystal and covers at least a portion of the surface of the oscillation crystal. According to embodiments herein, the barrier layer is not any electrode layer that can be applied to the surface of the oscillation crystal. The barrier layer is also not the first layer of evaporated material on the substrate. In embodiments herein, the barrier layer comprises a barrier material that is different from the first layer of evaporated material on the substrate, and prevents the diffusion of vaporized material into the oscillation crystal.

[0022] According to embodiments herein, the barrier layer may comprise a barrier material that prevents diffusion of evaporated material, e.g., metal from the metal-organic compound used in the fabrication of OLEDs, into the oscillation crystal. According to embodiments herein, the barrier layer is not an electrode or electrode layer, but rather is a layer of barrier material that is adjusted to the diffusion characteristics of the evaporated material into the oscillation crystal. For example, the barrier material may be tailored to the anti-diffusion properties of metals such as iridium and platinum used as part of the material layers deposited in the fabrication processes of devices such as OLEDs. According to embodiments that may be combined with other embodiments described herein, the barrier layer may be tailored to at least the first layer of evaporated material on the substrate. In embodiments herein, the barrier material may be any one or more of, for example, silicon nitride, oxide, and metal.

[0023] According to embodiments herein, the oscillation correction of the sensing element has a front side adapted to face the evaporated material, and a rear side adapted to be directed away from the evaporated material. The barrier layer is provided on the anterior side of the oscillation crystal. In embodiments herein, the barrier layer covers at least all of the surfaces on the front side of the oscillation quartz exposed to the evaporated material. The back side of the oscillation crystal may include one or more electrodes configured to determine a change in the oscillation frequency of the oscillation crystal, which may indicate the deposition rate. One or more of the electrodes may also function to excite the oscillation correction.

[0024] Exemplarily, referring to FIG. 1, a measurement assembly 100 for measuring a deposition rate of a vaporized material, according to embodiments herein, includes a detection element (not shown) having an oscillation crystal 111 for detecting a deposition rate 110 and a barrier layer 112 for protecting the oscillation crystal 111 from in-diffusion of metals from the vaporized material. According to embodiments herein, the term "detection element" may be used interchangeably with the term "pre-processed detection element ". Referring to FIG. 1, the overall deposition direction of the vaporized material 130 is indicated by arrows 135. In embodiments of the invention, during the deposition rate measurement, the evaporated material to be deposited on the substrate forms at least the first material layer 131 on the surface of the detection element 110. According to embodiments that may be combined with other embodiments described herein, the fabrication process may include depositing a plurality of material layers of the same or different vaporized materials on the substrate. During the same manufacturing process, a plurality of material layers of the same or different evaporated materials will be deposited on the surface of the sensing element. Illustratively, FIG. 1 illustrates an additional material layer 132 on the first material layer 131.

[0025]  The barrier layer 112 is provided directly on the surface of the oscillation crystal 111 or else the surface of the oscillation crystal 111 is exposed to the evaporated material 130 during the deposition rate measurement Will be. In embodiments herein, the barrier layer may have a thickness of 15 nm to 110 nm, especially 20 nm to 10 nm. In further embodiments of the invention, the barrier layer may have a thickness that does not interfere with the detection capabilities of the oscillation modification. For example, the barrier layer may have a thickness of 1 [mu] m or less. According to embodiments herein, the barrier layer may be applied to the surface of the oscillation crystal 111 by at least one of a plasma-enhanced chemical vapor deposition (PECVD) process, a sputter process, and an evaporation process.

[0026] In the embodiments herein, the rear side of the oscillation correction of the sensing element may comprise at least one electrode. Referring to FIG. 2, a first electrode 171 and a second electrode 172 provided on the rear side of the oscillation crystal 111 are shown.

[0027] In the embodiments herein, the measurement assembly further includes a holder 120 for holding the oscillation crystal 111. The holder may include materials having a low thermal conductivity to remove or reduce any negative effects of high temperature on the quality, accuracy, and stability of the deposition rate measurement. The measurement assembly 100 includes an aperture 101 that provides an aperture configured to expose the barrier layer 112 of the oscillation crystal 111 to the vaporized material 130. In some embodiments, In the embodiments herein, the openings may also be referred to as measurement openings.

[0028] In the embodiments herein, the sensing element 110 may be removable from the measurement assembly 100. Since the useful life of the oscillation correction may be limited, the sensing element 110, including oscillation correction, can be periodically replaced without having to replace the measuring assembly 100.

[0029] According to embodiments of the present disclosure, the measurement assembly 100 includes a holder 120 for holding the sensing element 110. According to embodiments that may be combined with other embodiments described herein, the sensing element 110 may be arranged within the holder 120. [ As illustrated illustratively in FIG. 1, the holder may define a measurement aperture of the aperture 101. In particular, the measurement openings can be constructed and arranged such that the evaporated material can be deposited on the detection element for measuring the deposition rate of the evaporated material. According to embodiments herein, the vaporized material is deposited on the barrier layer of the oscillation crystal.

[0030] Referring to Figure 2, which shows a top view of the measurement assembly of Figure 1, the diameter 102 of the opening in the opening 101 of the measurement assembly is less than the diameter 103 of the sensing element 110, Lt; / RTI > of the barrier layer 112 of FIG. According to embodiments of the invention, the barrier layer 112 of the sensing element 110 extends further than the diameter 102 of the opening of the opening 101. Arranging the sensing element 110 such that the barrier layer 112 extends beyond the opening of the opening 101 in the embodiments of the present invention is advantageous in that the arrangement of the sensing element 110 between the opening of the opening 101 and the sensing element 110 140, it is ensured that the evaporated material does not diffuse into the oscillation crystal 111. The junction 140 between the opening of the opening 101 and the sensing element 110 is defined by the distance between the inner peripheral edge of the holder 120 and the barrier layer of the sensing element 110, As shown in FIG.

[0031] According to embodiments that may be combined with other embodiments described herein, the openings of the openings of the measurement assembly may have an elliptical-, square-, rectangular-, or triangular-shaped configuration. For example, the figures show a measurement assembly having an opening with a circular-shaped opening. In embodiments with openings having openings other than the one-shaped, the barrier layer of the detection element may extend further than the openings of the openings.

[0032] According to embodiments of the present disclosure, the measurement assembly may include an oscillator. In the embodiments herein, the oscillator may be mechanically coupled to the sensing element to excite the sensing element. For example, the oscillator 160 may apply mechanical energy to the oscillation crystal 111 of the sensing element. The oscillator 160 may be movable relative to the sensing element 110. For example, double headed arrows 161 in FIG. 1 illustrate the direction of movement of the oscillator. According to embodiments that may be combined with other embodiments described herein, the oscillator may also be implemented in other forms, e.g., a generator that generates an AC potential to excite the oscillation crystal. To determine the deposition rate of the evaporated material, changes in the response signal from the oscillation correction over time can be processed.

[0033] In the embodiments herein, the measurement assembly 100 may include a control unit configured to measure changes in the oscillation frequency of the oscillation crystal. According to the embodiments herein, the control unit 150 is shown in Fig. The control unit 150 can control the oscillator 160, for example. According to embodiments of the invention, the control unit 150 may be connected to one or more electrodes of the sensing element 110. According to embodiments that may be combined with other embodiments described herein, the control unit may be configured to detect a change in the frequency of the signal from the oscillation correction over time. This information can be processed by the control unit to provide a measurement of the thickness of the layer of evaporated material deposited on the substrate and / or a deposition rate of the evaporated material on the substrate.

[0034] According to embodiments that may be combined with other embodiments described herein, the control unit may be configured, for example, to be part of a feedback loop, which may terminate the deposition process, The deposition rate of the deposition process can be adjusted in cases exceeding a predetermined threshold. Providing such a feedback function in combination with the measurement assembly and the detection element described herein can increase the reliability of the evaporation process and produce very high quality products.

[0035] Figures 3A, 3B, and 3C show schematic diagrams of evaporation sources according to embodiments of the present invention. Figures 3a and 3b show schematic side views of an evaporation source according to embodiments as described herein. The vapor sources of Figures 3a and 3b are different for the positions of the heating unit and the evaporative crucible along the distribution pipe. To avoid repetition, all other elements described for one of the embodiments are also applicable to other embodiments.

[0036] The evaporation source 300 includes an evaporation crucible 310 configured to evaporate the material. The evaporation source 300 also includes a distribution pipe 320 which is provided along the length of the distribution pipe to provide evaporated material, as exemplarily shown in Figure 3B One or more outlets 322. According to embodiments, the distribution pipe 320 is in fluid communication with the evaporation crucible 310, for example, by a vapor conduit 332, as exemplarily shown in FIG. 3B. The steam conduit 332 may be provided to the distribution pipe 320 at a central portion of the distribution pipe, or at another position between the lower end of the distribution pipe and the upper end of the distribution pipe. According to embodiments herein, the evaporation source includes a measurement assembly 100 that is capable of measuring the deposition rate with high accuracy. Adoption of an evaporation source in accordance with the embodiments described herein may be advantageous for high quality display manufacturing, particularly OLED manufacturing.

[0037] According to embodiments that may be combined with other embodiments described herein, the distribution pipe 320 may be a elongate tube that includes a heating element 315, as illustrated exemplarily in Figure 3A . The evaporation crucible 310 may be a reservoir for a material to be evaporated by the heating unit 325, for example, an organic material. For example, the heating unit 325 may be provided in the enclosure of the evaporation crucible 310. According to embodiments that may be combined with other embodiments described herein, the distribution pipe 320 may provide a line source. For example, as illustrated in FIG. 3B, a plurality of outlets 322, e.g., nozzles, may be arranged along at least one line. According to an alternative embodiment (not shown in the figures), one elongate opening, for example a slit, extending along at least one line may be provided. According to some embodiments that may be combined with other embodiments described herein, the line source may extend essentially vertically.

[0038] According to some embodiments that may be combined with other embodiments described herein, the length of the dispensing pipe 320 may correspond to the height of the substrate on which the material is to be deposited in the deposition apparatus. Alternatively, the length of the distribution pipe 320 may be longer than the height of the substrate on which the material is to be deposited, e.g., at least 10% or even 20%. Uniform deposition at the upper end of the substrate and / or at the lower end of the substrate can be provided. For example, the length of the dispensing pipe 320 may be 1.3 m or more, such as 2.5 m or more. In the embodiments herein, the dispensing pipe may be provided on the support 302.

[0039] According to embodiments that may be combined with other embodiments described herein, the evaporation crucible 310 may be provided at the lower end of the distribution pipe 320, as exemplarily shown in FIG. 3A. Materials, such as organic materials, can be vaporized in the evaporation furnace 310. [ The vaporized material may enter the dispensing pipe at the bottom of the dispensing pipe 320 and may be dispensed through a plurality of outlets 322 of the dispensing pipe 320, for example, to an essentially vertical substrate, (Sideways). 3B, a measurement assembly 100 in accordance with the embodiments described herein may be provided at an upper portion of the distribution pipe 320, particularly at an upper end thereof. In other embodiments, the measurement assembly may be positioned at the lower end of the distribution pipe, or may be positioned in the vicinity of the substrate to be coated in a vacuum chamber.

[0040] 3B, according to embodiments that may be combined with other embodiments described herein, as illustrated exemplarily in FIGS. 3B and 3C, one end of the dispensing pipe 320 A measurement outlet 350 may be provided in the wall of the portion or distribution pipe 320, for example, in the wall of the rear portion 324a of the distribution pipe 320. Alternatively, the measurement outlet 350 may be provided in the top wall 324b of the distribution pipe 320. [ The evaporated material may be provided to the measurement assembly 100 from the interior of the dispensing pipe 320 through the measurement outlet 350, as illustrated by arrow 351 in Figure 3c. According to embodiments that may be combined with other embodiments described herein, the measurement outlet 350 may have an opening having a diameter of 0.5 mm to 4 mm. The measurement outlet 350 may include, for example, a nozzle. For example, the nozzles may include adjustable openings for adjusting the flow of evaporated material provided to the measurement assembly 100.

[0041] In the embodiments herein, the nozzle is provided by a lower limit of 1/70 of the total flow provided by the evaporation source, in particular by a lower limit of 1/60 of the total flow provided by the evaporation source, more particularly by an evaporation source The upper limit of 1/50 of the total flow being provided by the evaporation source to the upper limit of 1/40 of the total flow being provided by the evaporation source, Lt; RTI ID = 0.0 > 1/25 < / RTI > For example, the nozzle may be configured to provide a measured flow of 1/54 of the total flow provided by the evaporation source.

[0042] 3C shows a perspective view of an evaporation source 300 in accordance with the embodiments described herein. As illustrated illustratively in FIG. 3C, the dispensing pipe 320 may be designed in a triangular shape. The triangular shape of the distribution pipe 320 may be advantageous if two or more distribution pipes are arranged side by side. In particular, the triangular shape of the distribution pipe 320 makes it possible to bring the outlets of neighboring distribution pipes as close to one another as possible. This allows for achieving an improved mixing of different materials from different distribution pipes, for example in the case of co-evaporation of two, three or even more different materials. According to embodiments that may be combined with other embodiments described herein, the measurement assembly 100 may be mounted to the hollow space of the dispensing pipe 320, As shown in FIG.

[0043] According to embodiments that may be combined with other embodiments described herein, the distribution pipe 320 may include walls, e.g., sidewalls 324c, which may be heated by the heating element 315, And may include a wall of the rear portion 324a of the pipe, for example, an end portion of the distribution pipe. The heating element 315 may be attached to or mounted to the walls of the distribution pipe 320. According to some embodiments that may be combined with other embodiments described herein, the evaporation source 300 may include a shield 304. [ The shield 304 can reduce thermal radiation towards the deposition area. In addition, the shield 304 can be cooled by the cooling element 316. For example, the cooling element 316 may be mounted to the shield 304 and may include a conduit for the cooling fluid.

[0044] Figure 4 shows a schematic plan view of a deposition apparatus 400 for applying material to a substrate 433 in a vacuum chamber 410, in accordance with embodiments described herein. According to embodiments that may be combined with other embodiments described herein, an evaporation source 300 as described herein may be coupled to a vacuum chamber 410, e.g., a track, e.g., a linear guide 420, Or on a looped track. The track or linear guide 420 may be configured for translational movement of the evaporation source 300. According to embodiments that may be combined with other embodiments described herein, a drive for translational movement may be provided in the vacuum chamber 410 to the track and / or linear guide 420, May be provided for the source 300. According to embodiments that may be combined with other embodiments described herein, a first valve 405, e.g., a gate valve, is provided that allows vacuum sealing for an adjacent vacuum chamber (not shown in FIG. 4) . The first valve may be opened for transport of the substrate 433 or the mask 432 into or out of the vacuum chamber 410.

[0045] According to some embodiments that may be combined with other embodiments described herein, additional vacuum chambers, such as maintenance vacuum chambers 411, may be provided in vacuum chamber 410, as exemplarily shown in FIG. . The vacuum chamber 410 and the maintenance vacuum chamber 411 may be connected by a second valve 407. The second valve 407 may be configured to open and close the vacuum seal between the vacuum chamber 410 and the maintenance vacuum chamber 411. The evaporation source 300 may be transferred to the maintenance process chamber 411 while the second valve 407 is in an open state. Thereafter, the second valve 407 may be closed to provide a vacuum seal between the vacuum chamber 410 and the maintenance vacuum chamber 411. When the second valve 407 is closed, the maintenance vacuum chamber 411 can be evacuated and opened for maintenance of the evaporation source 300 without breaking the vacuum of the vacuum chamber 410.

[0046] As illustrated illustratively in FIG. 4, two substrates may be supported on each of the transport tracks in the vacuum chamber 410. Also, two tracks may be provided for providing masks on top of the substrate. During the coating, the substrate 433 may be masked by respective masks. For example, the mask may be provided in a mask frame 431 for holding the mask 432 in a predetermined position.

[0047] According to some embodiments that may be combined with other embodiments described herein, the substrate 433 may be supported by a substrate support 426, which may be connected to the alignment unit 412. The alignment unit 412 can adjust the position of the substrate 433 with respect to the mask 432. [ As illustrated illustratively in FIG. 4, the substrate support 426 may be coupled to the alignment unit 412. In embodiments of the present invention, the substrate can be moved relative to the mask 432 to provide proper alignment between the substrate and the mask during deposition of the material, which can be advantageous for manufacturing high quality displays. Alternatively or additionally, a mask frame 431, which holds the mask 432 and / or the mask 432, may be connected to the alignment unit 412. According to embodiments herein, the mask 432 may be positioned relative to the substrate 433, or both the mask 432 and the substrate 433 may be positioned relative to each other.

[0048] As shown in FIG. 4, linear guide 420 may provide a direction of translational movement of evaporation source 300. Masks 432 may be provided on both sides of the evaporation source 300. The masks may extend essentially parallel to the direction of translation. In addition, the substrates on opposite sides of the evaporation source 300 can also extend essentially parallel to the direction of translational motion. The evaporation source 300 provided in the vacuum chamber 410 of the deposition apparatus 400 includes a support 302 that may be configured for translational movement along the linear guide 420, ). For example, the support 302 may support two evaporation crucibles and two distribution pipes 320 provided on the evaporation crucible 310. The vapor produced in the evaporation crucible can move upward and out of one or more outlets of the distribution pipe. Deposition devices as described herein provide for improved quality display fabrication, particularly OLED fabrication.

[0049] Figure 5 schematically illustrates a method for measuring the deposition rate of evaporated material on a substrate, in accordance with embodiments herein. A method 500 for measuring a deposition rate of a vaporized material includes installing 510 a measurement assembly having a detection element as described herein in a vacuum chamber of a deposition apparatus. According to embodiments herein, the detection element may be a pre-processed detection element. The term " pre-processed detection element " used to describe the embodiments of the present application is intended to encompass a wide variety of materials that can be used to detect the deposition rate of evaporated material deposited on a substrate, Layer should be understood as a deposited detection element. In embodiments of the invention, the pre-processed detection element has a barrier material that has a barrier material deposited on the oscillation crystal and covers at least a portion of the surface of the oscillation crystal. According to embodiments herein, the barrier layer is not any electrode layer that can be applied to the surface of the oscillation crystal. The barrier layer is also not the first layer of evaporated material on the substrate. In embodiments herein, the barrier layer comprises a barrier material that is different from the first layer of vaporized material on the substrate, and prevents in-diffusion of the evaporated material into the oscillation crystal.

[0050] In embodiments of the invention, the method 500 further comprises depositing 520 a vaporized material, e.g., a first layer of organic material, on the substrate. The evaporated material may include, for example, dopants containing metal atoms, such as iridium (Ir) or platinum (Pt). And also, the method includes measuring 530 the deposition rate of the vaporized material of the first layer using a measurement assembly. In method 500, a barrier layer is provided on the oscillation crystal of the sensing element prior to depositing the first layer of vaporized material onto the substrate. And also, in accordance with embodiments herein, a barrier layer may be provided on the oscillation correction of the detection element, prior to mounting the measurement assembly comprising the detection element in the vacuum chamber of the deposition apparatus.

[0051] Optionally, in accordance with embodiments herein, the method 500 includes pre-processing (508) pre-processing the oscillation correction of the sensing element of the measurement assembly by applying the barrier layer on at least a portion of the oscillation correction can do. The barrier layer comprises a barrier material configured to prevent the vaporized material from diffusing into the oscillation crystal. According to embodiments herein, a diffusion barrier may be provided to fully cover the anterior side of the oscillation correction. The front side of the oscillation crystal is defined as the side of the oscillation correction toward the evaporated material during the measurement of the deposition rate of the evaporated material deposited on the substrate.

[0052] In embodiments herein, a method 500 for measuring the deposition rate of a vaporized material includes installing (509) an oscillation crystal within the measurement assembly having a barrier layer as described above. In particular, the oscillation correction can be installed in the measurement assembly such that the barrier layer extends beyond the opening of the aperture of the measurement assembly.

[0053] According to embodiments herein, a method 500 for measuring a deposition rate of a vaporized material includes depositing (531) at least one or more additional layers of vaporized material on a first layer can do. In embodiments herein, the first layer of vaporized material and one or more additional layers of vaporized material may be different vaporized materials. In embodiments herein, the barrier layer of the sensing element may be configured for diffusion characteristics into the oscillation crystal, both of the different evaporated materials. For example, the barrier layer may prevent the diffusion of the metals from the first layer of vaporized material from diffusing into the oscillation crystal. In addition, the barrier layer may also prevent diffusions of metals from one or more additional layers of different evaporated materials from diffusing into the oscillation crystal through the first layer.

[0054] According to embodiments herein, a method 500 for measuring a deposition rate of a vaporized material includes measuring a deposition rate of vaporized material of at least one or more additional layers using a measurement assembly 532). According to embodiments herein, measuring the deposition rate of the evaporated material on the substrate comprises determining changes in the oscillation frequency of the oscillation crystal. In embodiments of the present invention, which may be combined with other embodiments described herein, the method may include terminating the deposition process and / or depositing a deposition process in which the measured deposition rate exceeds a predetermined threshold And adjusting the rate (step 533).

[0055] According to embodiments of the present disclosure, to prevent the evaporated material from diffusing into the oscillation crystal, a barrier layer having a barrier material covering at least a portion of the oscillation crystal exposed to the evaporation material is used to modify the oscillation correction of the detection element Pre-processing can improve the stability, accuracy, and quality of deposition rate measurements. Also, measurement assemblies for measuring the deposition rate of evaporated material and methods for measuring the deposition rate in accordance with the embodiments described herein may be used for, for example, advanced deposition rate measurements for high quality OLED manufacturing, Thereby providing improved manufacturing.

[0056] This written description uses examples to describe the present disclosure including the best mode, and also includes procedures for creating and using any devices or systems and performing any integrated methods, Thereby enabling a person skilled in the art to carry out the object. While various specific embodiments have been disclosed above, the mutually non-exclusive features of the described embodiments may be combined with one another. The patentable scope is defined by the claims, and other examples include those structural elements that have structural elements that are not different from the literal language of the claims, or that have equivalent structural elements with minor differences from the words of the claims Is intended to be within the scope of the claims.

Claims (15)

A sensing element for a measurement assembly adapted to measure a deposition rate of evaporated material on a substrate,
An oscillation crystal for detecting the deposition rate; And
And a barrier layer comprising a barrier material covering at least a portion of said oscillation crystal configured to prevent said evaporated material from diffusing into said oscillation crystal.
Detection element for a measurement assembly. The method according to claim 1,
Wherein the oscillation crystal comprises a front side adapted to face the evaporated material and a rear side adapted to face away from the evaporated material, the barrier layer being provided on the front side of the oscillation crystal, Wherein one or more electrodes are selectively provided on the rear side of the oscillation crystal,
Detection element for a measurement assembly. 3. The method according to claim 1 or 2,
Wherein the barrier material comprises at least one of silicon nitride, oxide, and metal.
Detection element for a measurement assembly. 4. The method according to any one of claims 1 to 3,
Wherein the vaporized material comprises an organic compound or a metal-organic compound and the barrier material is adjusted to the diffusion characteristics of the vaporized material into the oscillation crystal,
Detection element for a measurement assembly. 5. The method of claim 4,
Wherein the organic compound or the metal-organic compound comprises at least one of platinum (Pt) and iridium (Ir)
Detection element for a measurement assembly. A measurement assembly for measuring a deposition rate of evaporated material on a substrate,
A detecting element according to any one of claims 1 to 5; And
And an opening having an opening configured to expose a barrier layer of the sensing element to the vaporized material,
Wherein the sensing element is arranged on the measurement assembly such that the barrier layer extends beyond an opening of the opening,
A measurement assembly for measuring a deposition rate of vaporized material on a substrate. The method according to claim 6,
Further comprising a holder for holding the sensing element, the holder defining boundaries of an opening of the opening,
A measurement assembly for measuring a deposition rate of vaporized material on a substrate. 8. The method according to claim 6 or 7,
Further comprising a control unit configured to measure changes in the oscillation frequency of the oscillation crystal,
A measurement assembly for measuring a deposition rate of vaporized material on a substrate. 9. The method according to any one of claims 6 to 8,
Further comprising an oscillator mechanically coupled to the sensing element for exciting the sensing element,
A measurement assembly for measuring a deposition rate of vaporized material on a substrate. A method of fabricating a detection element for a measurement assembly adapted to measure a deposition rate of evaporated material on a substrate,
Treating said oscillation modification of said sensing element by depositing a barrier layer comprising a barrier material on said oscillation crystal to prevent evaporation material from diffusing into said oscillation crystal.
A method of manufacturing a sensing element for a measurement assembly. 11. The method of claim 10,
Wherein the pre-processing of the oscillation correction of the sensing element comprises selecting the adjusted barrier material in accordance with the diffusion characteristics of the vaporized material into the oscillation crystal.
A method of manufacturing a sensing element for a measurement assembly. The method according to claim 10 or 11,
Depositing the barrier layer may include depositing the barrier layer by any one or more of a plasma enhanced chemical vapor deposition (PECVD) process, a sputter process, and a vapor deposition process.
A method of manufacturing a sensing element for a measurement assembly. A method of measuring a deposition rate of evaporated material on a substrate,
Installing a measurement assembly having a sensing element according to any one of claims 1 to 5 in a vacuum chamber of a deposition apparatus;
Depositing a first layer of the evaporated material on the substrate; And
And measuring the deposition rate of the vaporized material of the first layer using the measurement assembly,
Wherein a barrier layer is provided on the oscillation crystal phase prior to depositing a first layer of the evaporated material on the substrate,
A method of measuring a deposition rate of evaporated material on a substrate. 14. The method of claim 13,
Wherein the barrier layer is provided on the oscillation crystal, prior to placing the measurement assembly in a vacuum chamber of the deposition apparatus,
A method of measuring a deposition rate of evaporated material on a substrate. The method according to claim 13 or 14,
Wherein the detection element comprises a plurality of detection elements, which are manufactured by any one of claims 10 to 12,
A method of measuring a deposition rate of evaporated material on a substrate.

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