KR20170123050A - Stripping compositions for photoresist - Google Patents
Stripping compositions for photoresist Download PDFInfo
- Publication number
- KR20170123050A KR20170123050A KR1020160052203A KR20160052203A KR20170123050A KR 20170123050 A KR20170123050 A KR 20170123050A KR 1020160052203 A KR1020160052203 A KR 1020160052203A KR 20160052203 A KR20160052203 A KR 20160052203A KR 20170123050 A KR20170123050 A KR 20170123050A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- ether
- parts
- basic compound
- weight
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 39
- 230000007797 corrosion Effects 0.000 claims abstract description 50
- 238000005260 corrosion Methods 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 42
- 229920000858 Cyclodextrin Polymers 0.000 claims abstract description 21
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000007514 bases Chemical class 0.000 claims description 32
- 239000003112 inhibitor Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000004094 surface-active agent Substances 0.000 claims description 17
- -1 monoisopropanol Chemical compound 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000002798 polar solvent Substances 0.000 claims description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 7
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 7
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000003495 polar organic solvent Substances 0.000 claims description 5
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 4
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 4
- 125000002252 acyl group Chemical group 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 3
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 3
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 2
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 claims description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- IQXXEPZFOOTTBA-UHFFFAOYSA-N 1-benzylpiperazine Chemical compound C=1C=CC=CC=1CN1CCNCC1 IQXXEPZFOOTTBA-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- VSTXCZGEEVFJES-UHFFFAOYSA-N 1-cycloundecyl-1,5-diazacycloundec-5-ene Chemical compound C1CCCCCC(CCCC1)N1CCCCCC=NCCC1 VSTXCZGEEVFJES-UHFFFAOYSA-N 0.000 claims description 2
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 claims description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 2
- WQFOZZKDRWMPOS-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4,5-ditert-butylphenol Chemical compound C1=C(C(C)(C)C)C(C(C)(C)C)=CC(O)=C1N1N=C2C=CC=CC2=N1 WQFOZZKDRWMPOS-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- PWORFEDVDWBHSJ-UHFFFAOYSA-N 2-methylbenzotriazole Chemical compound C1=CC=CC2=NN(C)N=C21 PWORFEDVDWBHSJ-UHFFFAOYSA-N 0.000 claims description 2
- JOMNTHCQHJPVAZ-UHFFFAOYSA-N 2-methylpiperazine Chemical compound CC1CNCCN1 JOMNTHCQHJPVAZ-UHFFFAOYSA-N 0.000 claims description 2
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 2
- GBSGXZBOFKJGMG-UHFFFAOYSA-N 3-propan-2-yloxypropan-1-ol Chemical compound CC(C)OCCCO GBSGXZBOFKJGMG-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- RJWLLQWLBMJCFD-UHFFFAOYSA-N 4-methylpiperazin-1-amine Chemical compound CN1CCN(N)CC1 RJWLLQWLBMJCFD-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 2
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- QEXSWSOTYGJQBX-UHFFFAOYSA-N NCCOC1N(CCNC1)CCO Chemical compound NCCOC1N(CCNC1)CCO QEXSWSOTYGJQBX-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 239000001506 calcium phosphate Substances 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 claims description 2
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims description 2
- 229940078499 tricalcium phosphate Drugs 0.000 claims description 2
- 229910000391 tricalcium phosphate Inorganic materials 0.000 claims description 2
- 235000019731 tricalcium phosphate Nutrition 0.000 claims description 2
- 229910000404 tripotassium phosphate Inorganic materials 0.000 claims description 2
- 235000019798 tripotassium phosphate Nutrition 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 2
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 2
- 101100283604 Caenorhabditis elegans pigk-1 gene Proteins 0.000 claims 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 claims 1
- 235000019797 dipotassium phosphate Nutrition 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 27
- 239000002184 metal Substances 0.000 abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000004299 exfoliation Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003093 cationic surfactant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 150000007529 inorganic bases Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 150000007530 organic bases Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 4
- 230000002588 toxic effect Effects 0.000 description 4
- 239000001116 FEMA 4028 Substances 0.000 description 3
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 description 3
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 description 3
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- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
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- 239000002280 amphoteric surfactant Substances 0.000 description 1
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- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C11D11/0047—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
본 발명은 포토레지스트 박리액 조성물에 관한 것으로서, 보다 상세하게는 포토레지스트 박리성능과 금속배선에 대한 내부식성이 우수하면서도 친환경적인 포토레지스트 박리액 조성물에 관한 것이다.The present invention relates to a photoresist stripping liquid composition, and more particularly, to a photoresist stripping liquid composition which is excellent in photoresist stripper performance and corrosion resistance against metal wiring while being environmentally friendly.
포토레지스트(photoresist)는 빛을 조사하면 화학 변화를 일으키는 수지로서, PAC(photoactive compound, 감광제), 수지, 첨가제, 용매 등으로 이루어져 있다. 이러한 포토레지스트는 포토레지스트 전극의 패턴을 형성하기 위한 에칭 공정 후 박리액에 의해 제거된다.Photoresist is a resin that causes chemical changes when irradiated with light. It is composed of PAC (photoactive compound), resin, additive, solvent and so on. Such a photoresist is removed by an exfoliation liquid after an etching process for forming a pattern of the photoresist electrode.
일반적으로 박리액은 염기성 성분, 극성 비양자성 용매, 양성자성 용매, 부식방지제, 소포제 등으로 구성되어 있다. 박리액 조성물의 일성분인 염기성 성분은 가교(Cross linked)된 포토레지스트의 결합을 끊어주는 역할을 하며, 극성 비양자성 용매는 결합이 끊어진 PAC와 노볼락 수지(Novolak Resin)를 해리시키는 역할을 하고, 양성자성 용매(Protic Solvent)는 노볼락 수지를 용해시키는 역할을 한다. 또한, 박리액 중의 부식방지제는 금속배선 전극의 부식을 방지하는 역할을 하고, 소포제는 공정 중 기포 발생을 방지하는 역할을 한다.In general, the exfoliating liquid is composed of a basic component, a polar aprotic solvent, a protic solvent, a corrosion inhibitor, an antifoaming agent and the like. The basic component, which is one component of the release liquid composition, serves to break the bond of the cross-linked photoresist, and the polar aprotic solvent serves to dissociate the PAC and the Novolak resin, , Protic Solvent (Protic Solvent) serves to dissolve novolac resin. In addition, the corrosion inhibitor in the exfoliation liquid serves to prevent corrosion of the metal wiring electrode, and the antifoaming agent serves to prevent the occurrence of bubbles during the process.
이러한 포토레지스트 박리액은 높은 박리 성능과 내부식성이 요구된다. 즉, 포토레지스트 박리액은 저온에서 단시간 내에 포토레지스트 성분을 박리할 수 있어야 하고 세정 후에도 기판상에 잔류물이 남지 않도록 박리 효율이 높아야 할 뿐만 아니라, 포토레지스트 하부층의 금속 배선에 대한 부식 손상을 최소화할 것이 요구된다.Such a photoresist peeling liquid is required to have high peeling performance and corrosion resistance. That is, the photoresist stripper must be capable of stripping the photoresist component at a low temperature within a short time, and must not only have high stripping efficiency so that no residue remains on the substrate even after cleaning, but also minimizes corrosion damage to the metal wiring of the photoresist lower layer Is required.
한편, 포토레지스트 박리액 조성물은 사용하는 용매의 주성분이 유기물질인 유기계 박리액과 물이 주성분이 수계 박리액으로 나눌 수 있다. On the other hand, the photoresist stripper solution composition can be divided into an organic stripper solution in which the main component of the solvent used is an organic material, and water, and a main component thereof is an aqueous stripper solution.
유기계 박리액 조성물의 경우, 박리 능력을 향상시키기 위해 비양성자성 극성 용매로서 디메틸술폭시드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈 등과 양자성 용매로 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르 및 디프로필렌글리콜 모노부틸에테르 등의 글리콜 에테르류를 주성분으로 사용하고 있다. 따라서, 박리액의 제조원가가 상승할 뿐만 아니라 글리콜 에테르류 등의 성분들은 중독성이 강하여 뇌와 신경에 해를 끼치는 등 환경적으로 매우 유해하다는 문제점이 있다.In the case of the organic release solution composition, in order to improve the peeling ability, an aprotic polar solvent such as dimethylsulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone or the like and a protonic solvent Glycol ethers such as diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether and dipropylene glycol monobutyl ether are used as the main components. Therefore, not only the manufacturing cost of the exfoliation solution is increased but also components such as glycol ethers are highly toxic and harmful to the brain and nerves.
반면, 물을 주용매로 사용하는 수계 박리액의 경우 제조 원가를 절감할 수 있을 뿐만 아니라, 독성이 강한 유기성분의 사용이 적으므로 폐수액 처리과정 및 환경적 측면에서 장점이 있으나, 유기계 박리액에 비해 박리성능이 떨어지고 Al 및 Cu 등과 같은 금속 배선에 대한 부식성이 높다는 단점이 있다.On the other hand, in the case of a water-based exfoliation solution using water as a main solvent, not only the manufacturing cost can be reduced but the use of the organic component having high toxicity is small, which is advantageous in terms of the treatment process of wastewater and environment, The peeling performance is lowered and the corrosion resistance against metal wiring such as Al and Cu is high.
최근 환경문제가 대두되면서 친환경적 박리액 사용에 대한 요구가 높아지고 있는바, 물을 주용매로 사용하되 박리성능 및 내부식성을 향상시킬 수 있고 제조원가를 절감할 수 있는 수계 박리액 조성물에 대한 연구개발이 필요하다.Recently, as environmental problems have been raised, there is a growing demand for environmentally friendly exfoliating liquids. As a result, research and development on a water-based exfoliating liquid composition capable of improving the peeling performance and corrosion resistance and reducing the manufacturing cost by using water as a main solvent need.
따라서, 상기 문제점을 해결하기 위하여, 본 발명은 물을 용매의 주성분으로 사용하되 박리성능 및 내부식성이 높고 친환경적인 박리액 조성물을 제공하는 것을 목적으로 한다.DISCLOSURE Technical Problem Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a peeling liquid composition which is water-soluble as a main component of a solvent and has high peelability and corrosion resistance and is environmentally friendly.
상기 과제를 해결하기 위한 본 발명의 일측면은, 하기 화학식 1로 표시되는 화합물과 염기성 화합물을 포함하는 포토레지스트 박리액 조성물을 제공한다.According to an aspect of the present invention, there is provided a photoresist stripper composition comprising a compound represented by Chemical Formula 1 and a basic compound.
<화학식 1>≪ Formula 1 >
본 발명의 다른 측면은, 시클로덱스트린 또는 시클로덱스트린 유도체를 포함하는 포토레지스트 제거용 수계 박리액 조성물을 제공한다.Another aspect of the present invention provides a water-based exfoliant composition for removing photoresist comprising a cyclodextrin or a cyclodextrin derivative.
본 발명에 따르면, 박리액 조성물의 일성분으로 시클로덱스트린 또는 그 유도체를 사용함으로써, 박리성능 및 내부식성이 우수한 박리액 조성물을 제공할 수 있다.According to the present invention, by using cyclodextrin or a derivative thereof as one component of the release liquid composition, it is possible to provide a release liquid composition excellent in peelability and corrosion resistance.
또한, 본 발명에 따르면, 제조원가 상승 및 환경문제를 초래하는 과량의 유기용매 대신 물을 용매의 주성분으로 사용하고 물에 잘 용해되는 시클로덱스트린 또는 그 유도체를 함유한 수계 박리액 제조가 가능하므로, 박리액 조성물의 제조원가를 절감할 수 있을 뿐만 아니라 인체 및 환경에 대한 유해성이 적은 친환경적인 박리액을 제공할 수 있다.In addition, according to the present invention, it is possible to prepare an aqueous stripping solution containing cyclodextrin or a derivative thereof, which is soluble in water, by using water as a main component of the solvent in place of an excessive amount of organic solvent, It is possible to reduce the production cost of the liquid composition and to provide an environmentally friendly peeling liquid which is less harmful to humans and the environment.
이하, 본 발명의 일측면에 따른 포토레지스트 박리액 조성물에 대하여 상세히 설명한다. Hereinafter, the photoresist stripper composition according to one aspect of the present invention will be described in detail.
본 발명의 일 측면에 따른 박리액 조성물은 시클로덱스트린 또는 그 유도체를 포함한다. 보다 구체적으로, 본 발명의 박리액 조성물은 (a) 시클로덱스트린 및/또는 그 유도체, (b) 염기성 화합물 및 (c) 물을 포함하며, 극성 유기용매, 계면활성제, 부식방지제 등을 더 포함할 수 있다.The release liquid composition according to one aspect of the present invention includes a cyclodextrin or a derivative thereof. More specifically, the release liquid composition of the present invention comprises (a) a cyclodextrin and / or a derivative thereof, (b) a basic compound and (c) water and further comprises a polar organic solvent, a surfactant, .
바람직하게는, 박리액 조성물은 전체 박리액 조성물 대비 1~50 중량부의 시클로덱스트린 및/또는 그 유도체, 1~30 중량부의 염기성 화합물 및 10~80 중량부의 물을 포함할 수 있고, 1~60 중량부의 극성 유기용매, 0.01~30 중량부의 계면활성제 및 0.01~10 중량부의 부식방지제를 더 포함할 수 있다.Preferably, the release liquid composition may contain 1 to 50 parts by weight of cyclodextrin and / or its derivative, 1 to 30 parts by weight of basic compound and 10 to 80 parts by weight of water relative to the total exfoliant composition, A negative polarity organic solvent, 0.01 to 30 parts by weight of a surfactant, and 0.01 to 10 parts by weight of a corrosion inhibitor.
먼저, 본 발명의 박리액의 일성분인 시클로덱스트린 또는 그 유도체(이하 시클로덱스트린 화합물 또는 CDs라고도 표기함)에 대하여 설명한다.First, a cyclodextrin or a derivative thereof (hereinafter also referred to as a cyclodextrin compound or CDs), which is one component of the release solution of the present invention, will be described.
본 발명의 박리액 조성물의 일성분인 시클로덱스트린 또는 그 유도체는 하기 화학식 1로 표시되는 화합물일 수 있다.The cyclodextrin or its derivative which is one component of the release liquid composition of the present invention may be a compound represented by the following general formula (1).
<화학식 1>≪ Formula 1 >
상기 화학식 1에서, n은 6 내지 8의 정수이며, R1, R2 및 R3 는 서로 독립적으로 수소, 치환 또는 비치환된 알킬기, 술폰산기, 아실기, 치환 또는 비치환된 벤질기 및 치환 또는 비치환된 벤조일기로 이루어진 군에서 선택된다.Wherein n is an integer of 6 to 8, R 1 , R 2 and R 3 are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group, a sulfonic acid group, an acyl group, Or an unsubstituted benzoyl group.
상기 화학식 1에서, n=6인 경우는 알파-시클로덱스트린 또는 그 유도체, n=7인 경우는 베타-시클로덱스트린 또는 그 유도체, n=8인 경우는 감마-시클로덱스트린 또는 그 유도체에 해당한다.In the above formula (1), alpha-cyclodextrin or a derivative thereof is n = 6, beta-cyclodextrin or a derivative thereof is n = 7, and gamma-cyclodextrin or a derivative thereof is n = 8.
R1, R2 및 R3가 알킬기인 경우, 바람직하게는 C1-C10의 알킬기일 수 있고, 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환될 수 있다. When R 1 , R 2 and R 3 are an alkyl group, it may preferably be a C 1 -C 10 alkyl group, and may be a group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group and an amino group substituted or unsubstituted with an alkyl group Which may be further substituted with one or more selected substituents.
R1, R2 및 R3가 'RCO-'로 표시될 수 있는 아실기인 경우, 바람직하게는 C1-C10의 아실기일 수 있고, 여기서 R은 H(수소)이거나 치환 또는 비치환된 알킬기일 수 있다.When R 1 , R 2 and R 3 are acyl groups which may be represented by 'RCO-', they may preferably be C 1 -C 10 acyl groups, wherein R is H (hydrogen) or a substituted or unsubstituted alkyl group Lt; / RTI >
R1, R2 및 R3가 벤질기 또는 벤조일기인 경우, 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환될 수 있다. When R 1 , R 2 and R 3 are a benzyl group or a benzoyl group, they may be further substituted with at least one substituent selected from the group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group and an amino group substituted or unsubstituted with an alkyl group.
예시적으로, R1, R2 및 R3는 서로 독립적으로 수소, 메틸, 에틸, 프로필, 옥틸, 메톡시에틸, 히드록시프로필, 설포부틸, 바이닐, 알릴, 시클로헥실, 테트라하이드로피란일, 피롤릴, 포밀, 아세틸, 프로피오닐, 프로페노일, 벤질, 메톡시벤질, 벤조일, 2-피페리딘아세틸, 신나밀, 스티렌일 등일 수 있으나, 이에 한정하는 것은 아니다.Illustratively, R 1 , R 2 and R 3 are independently of each other hydrogen, methyl, ethyl, propyl, octyl, methoxyethyl, hydroxypropyl, sulfobutyl, vinyl, allyl, cyclohexyl, tetrahydropyranyl, But are not limited to, benzyl, benzyl, 2-piperidine acetyl, cinnamyl, styrenyl, and the like.
상기 화학식 1로 표시되는 화합물은 D-글루코스로 결합에 의해 고리화된 원통형의 시클로덱스트린 화합물(CDs)이며, D-글루코스의 중합도에 따라 알파-CD(n=6), 베타-CD(n=7) 및 감마-CD(n=8)라고 한다. The compounds represented by Formula 1 are cylindrical cyclodextrin compounds (CDs) cyclized by bonding with D-glucose, and alpha-CD (n = 6), beta-CD (n = 7) and gamma-CD (n = 8).
특히, CDs는 원통형의 외부에 친수성인 히드록시기가 과량 존재하기 때문에 물에 대한 용해도가 높은 반면 원통형 내부에는 친유성의 커다란 빈 공간을 가지고 있어 다른 물질과 포접을 형성할 수도 있으며, 산, 아민, 금속과 같은 이온뿐 아니라 지방족 및 방향족 탄화수소까지 포접할 수 있는 특성을 가지고 있다.In particular, CDs have a high solubility in water due to the presence of excessive hydrophilic hydroxyl groups on the outside of the cylinder, while they have a large vacancy space in the inside of the cylinder and may form capsules with other substances, But also to aliphatic and aromatic hydrocarbons.
이 CDs를 이루는 구성단위는 글루코스이기때문에 독성이 없고 인체에 매우 안전하여 식품, 의약품, 화장품, 화장실용품 등의 용도로 폭넓게 사용되고 있다. Since the constituent unit of these CDs is glucose, it is not toxic and is very safe for human body, and is widely used for foods, medicines, cosmetics, toiletries and the like.
본 발명에서, CDs가 갖는 친유성 및 친수성의 성질에 의해 유성 또는 난용성 물질을 수계에서 유화 및 균질화하는 역할을 할 수 있다. 따라서 글리콜 에테르류와 같은 독성의 유기용매를 사용하지 않고도 감광제(PAC)나 유기 염류와 같은 유성물질을 수계에 잘 용해 또는 유화시킬 수 있으므로 박리효과를 증대시킬 수 있다.In the present invention, oily or poorly soluble substances can be emulsified and homogenized in a water-based owing to the lipophilic and hydrophilic properties of CDs. Therefore, it is possible to dissolve or emulsify an oily substance such as a photosensitizer (PAC) or an organic salt into the water system without using a toxic organic solvent such as glycol ethers, thereby increasing the peeling effect.
또한, CDs는 분자 내에 알코올 및 에테르 작용기가 풍부하기 때문에 금속표면과 배위결합이 가능하다. 따라서 금속배선 표면에 결합된 CDs는 금속이 물 또는 산소와 접촉하는 것을 차단시킴으로써 결과적으로 금속표면을 코팅하는 효과를 갖게 되어 금속의 부식을 방지할 수 있게 된다. 뿐만 아니라, 금속을 부식시킬 수 있는 무기염기나 유기염기와 같은 강한 염기성 화합물이나 이온들을 CDs의 내부에 포접할 수 있어서 부식억제력을 향상시킬 수도 있다.CDs are also capable of coordinating with metal surfaces because of the abundance of alcohol and ether functionalities in the molecule. Therefore, the CDs bonded to the surface of the metal wiring can prevent the metal from contacting with water or oxygen, and consequently have the effect of coating the metal surface, thereby preventing corrosion of the metal. In addition, strongly basic compounds such as inorganic bases and organic bases that can corrode metal can be trapped inside the CDs, thereby improving the corrosion inhibiting ability.
상기 화학식 1로 표시되는 시클로덱스트린 화합물은 박리액 전체 조성물 대비 1~50 중량부, 바람직하게는 5~20중량부일 수 있다. 시클로덱스트린 화합물의 중량이 1중량부 미만이면 계면 활성력이 저하되어 유성물질들을 충분히 제거할 수 없고, 50 중량부를 초과하면 박리액의 점도가 높아져 박리효율이 낮아질 수 있다.The cyclodextrin compound represented by Formula 1 may be used in an amount of 1 to 50 parts by weight, preferably 5 to 20 parts by weight, based on the total weight of the composition. If the weight of the cyclodextrin compound is less than 1 part by weight, the surfactant may not be sufficiently removed, and if it exceeds 50 parts by weight, the viscosity of the peeling liquid may increase and the peeling efficiency may be lowered.
다음으로, 본 발명의 박리액 조성물의 일성분인 염기성 화합물에 대하여 설명한다. 염기성 화합물은 변형된 포토레지스트 레진의 페놀성분 간 수소 결합을 약화시킴으로써 박리력을 높이는 역할을 한다. 이러한 역할을 하는 염기성 화합물은 유기 염기 또는 무기 염기일 수 있으며, 유기 염기와 무기염기를 혼합하여 사용할 수도 있다.Next, the basic compound which is one component of the release liquid composition of the present invention will be described. The basic compound serves to enhance the peeling force by weakening the hydrogen bonding between the phenol components of the modified photoresist resin. The basic compound having such a role may be an organic base or an inorganic base, and an organic base and an inorganic base may be mixed and used.
유기 염기성 화합물은 모노메틸아민, 디메틸아민, 트리에틸아민, 디이소프로필에틸아민, 모노에탄올아민, 모노이소프로판올, 디에탄올아민, 트리에탄올아민, 2-(2-아미노에톡시)에탄올, 2-아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 2-메틸아미노에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(3-아미노프로필)몰포린, 2-메틸피페라진, 1-메틸피페라진, 1-아미노-4-메틸피페라진, 1-벤질 피페라진, 1-페닐 피페라진, 테크라메틸구아니딘, 1,8-디아자비시클로운데크-7-엔 및 1,5-디아자비시클로(4,3,0)논-5-엔으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The organic basic compound is selected from the group consisting of monomethylamine, dimethylamine, triethylamine, diisopropylethylamine, monoethanolamine, monoisopropanol, diethanolamine, triethanolamine, 2- (2-aminoethoxy) (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenyl (2-methylpiperazin-1-yl) One selected from the group consisting of piperazine, tetramethylguanidine, 1,8-diazabicycloundec-7-ene and 1,5-diazabicyclo (4,3,0) Compound, or a mixture of two or more, but is not limited thereto.
무기 염기성 화합물은 수산화암모늄, 수산화나트륨, 수산화칼륨, 인산 수소 이암모늄((NH4)2HPO4), 인산 이수소 암모늄((NH4)H2PO4), 인산 삼암모늄((NH4)3PO4), 인산 수소 이나트륨(Na2HPO4), 인산 이수소 나트륨(NaH2PO4), 인산 삼나트륨(Na3PO4), 인산 수소 이칼륨(K2HPO4), 인산 이수소 칼륨(KH2PO4),및 인산 삼칼륨(K3PO4)으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.Inorganic basic compounds are ammonium hydroxide, sodium hydroxide, potassium hydroxide, phosphoric acid, ammonium ((NH 4) 2 HPO 4), ammonium dihydrogen phosphate ((NH 4) H 2 PO 4), tricalcium phosphate, ammonium ((NH 4) 3 PO 4 ), sodium dihydrogen phosphate (Na 2 HPO 4 ), sodium dihydrogen phosphate (NaH 2 PO 4 ), trisodium phosphate (Na 3 PO 4 ), potassium dihydrogen phosphate (K 2 HPO 4 ) Potassium hydroxide (KH 2 PO 4 ), and tripotassium phosphate (K 3 PO 4 ), or a mixture of two or more of them. However, the present invention is not limited thereto.
박리액 조성물 내 염기성 화합물의 함량은 전체 박리액 조성물 대비 1~30중량부, 바람직하게는 1~15중량부일 수 있다. 또한, 유기 염기성 화합물과 무기 염기성 화합물을 혼합 사용시 박리액 내의 유기 염기는 5~20중량부, 무기 염기는 1~5중량부인 것이 바람직하다. 염기성 화합물의 중량이 1중량부 미만이면 PAC-레진(resin) 간에 존재하는 결합이 충분히 끊어지지 않아 박리효과를 저하시킬 수 있으며, 30중량부를 초과하면 금속 배선을 부식시킬 수 있다.The content of the basic compound in the peeling liquid composition may be 1 to 30 parts by weight, preferably 1 to 15 parts by weight, based on the total peeling liquid composition. When the organic basic compound and the inorganic basic compound are mixed, it is preferable that the organic base in the peeling liquid is 5 to 20 parts by weight and the inorganic base is 1 to 5 parts by weight. If the weight of the basic compound is less than 1 part by weight, the bond existing between the PAC resin may not be sufficiently broken, and the peeling effect may be deteriorated. If the amount exceeds 30 parts by weight, the metal wiring may be corroded.
본 발명의 일 실시예에 따른 박리액 조성물은 물을 포함한다. 박리액 조성물에 함유된 물은 화합물 1과 염기성 화합물 등의 수용성 화합물을 녹이기 위한 것으로, 증류수, 탈이온수 또는 초순수 등일 수 있으며, 초순수인 것이 바람직하다. The release liquid composition according to an embodiment of the present invention includes water. Water contained in the release liquid composition is for dissolving the compound 1 and a water-soluble compound such as a basic compound, and may be distilled water, deionized water, ultrapure water, or the like, and is preferably ultra pure water.
이러한 물은 박리액 조성물 대비 10~80중량부, 바람직하게는 30~70중량부일 수 있다. 상기 물의 함량이 10중량부 미만이면 염기성분의 농도가 높아지게 되어 금속 배선의 부식성을 증가시킬 수 있으며, 독성 유기용매의 사용량이 증가할 수 있다. 또한, 박리액 내의 물의 함량이 80중량부를 초과하면 염기성분의 농도가 낮아지게 되어 포토레지스트 박리성능이 저하될 수 있다. Such water may be 10 to 80 parts by weight, preferably 30 to 70 parts by weight, based on the release liquid composition. If the content of the water is less than 10 parts by weight, the concentration of the base component may be increased, thereby increasing the corrosiveness of the metal wiring, and the amount of the toxic organic solvent may be increased. In addition, if the content of water in the peeling liquid exceeds 80 parts by weight, the concentration of the base component may be lowered, and the photoresist peeling performance may be deteriorated.
또한, 본 발명의 일시시예에 따른 박리액 조성물은 극성 유기용매를 더 포함할 수 있다. 이러한 극성 용매는 결합이 끊어진 감광제(PAC, photoactive compound)와 Novolak Resin 등의 유성 물질에 대한 용해도를 높이는 역할을 한다.극성 유기용매는 전체 박리액 조성물 대비 1~60중량부, 바람직하게는 20~40중량부일 수 있다. 극성 용매의 함량이 1중량부 미만이면 감광제와 노볼락 레진 등에 대한 용해도가 낮아져서 박리 효과가 저하될 수 있고, 60중량부를 초과하면 환경 및 인체에 대한 유해성을 증가시키고 폐수처리비용 등 경제적 손실을 유발시킬 수 있다. In addition, the peeling liquid composition according to the embodiment of the present invention may further include a polar organic solvent. The polar solvent serves to enhance the solubility in oily materials such as PAC (photoactive compound) and Novolak Resin. The polar organic solvent is used in an amount of 1 to 60 parts by weight, preferably 20 to 60 parts by weight, 40 parts by weight. If the content of the polar solvent is less than 1 part by weight, the solubility of the photosensitive agent and the novolac resin may be lowered and the peeling effect may be lowered. If the amount exceeds 60 parts by weight, the harmfulness to the environment and human body may be increased, .
이러한 극성 용매는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N, N-디메틸프로피온아미드, N-메틸 피로리돈, N-에틸 피롤리돈, r-부티로락톤, 디메틸설폭사이드, 설포란, 에틸렌글리콜모노메틸에테르, 에릴렌글리콜모노에틸에테르, 에틸렌글리골모노이소프로필 에테르, 에릴렌글리콜모노부틸 에테르, 트리에틸렌글리콜모노에틸 에테르, 트리에틸렌글리콜모노이소프로필 에테르, 트리에틸렌글리콜모노부틸 에테르, 폴리에틸렌글리콜모노메틸 에테르, 폴리에틸렌글리콜모노이소프로필 에테르, 폴리에틸렌글리콜모노부틸 에테르, 프로필렌글리콜모노메틸 에테르, 프로필렌글리콜모노이소프로필 에테르, 프로필렌글리콜모노부틸 에테르, 또는 프로필렌글리콜모노메틸 에테르 아세테이트 등으로 이루어진 군으로부터 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The polar solvent may be selected from the group consisting of formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, erylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, Triethylene glycol monoethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monoisopropyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol mono Isopropyl ether, propylene glycol monobutyl ether, or propylene glycol monomethyl ether One member selected from the group consisting of lactate, etc. may be a single compound or a mixture of two or more, not limited to this.
또한, 본 발명의 일실시예에 따른 포토레지스트 박리액 조성물은 계면활성제, 바람직하게는 양이온계면활성제 성분을 더 포함할 수 있다. 계면활성제는 계면이 가지고 있는 고유의 성질을 변화시키고 장력을 저하시켜 용도에 따라 유화 또는 세정 등의 역할을 하는 성분들을 말하는 것으로, 계면 간의 침투력을 증가시켜 균일한 세정이 이루어지도록 함으로써 포토레지스트의 박리력을 증가시키는 역할을 한다. 따라서 계면활성제는 음이온 계면활성제, 양이온 계면활성제, 비이온 계면활성제, 양쪽성 계면활성제를 적용할 수 있지만, 양이온 계면활성제가 바람직하다.In addition, the photoresist stripper solution composition according to an embodiment of the present invention may further comprise a surfactant, preferably a cationic surfactant component. Surfactant refers to components that change the inherent properties of the interface and lower the tensile force and play a role of emulsifying or cleaning depending on the application. By increasing the penetration power between the interfaces, uniform cleaning can be performed, It increases the power. Therefore, anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants can be applied as surfactants, but cationic surfactants are preferred.
박리액 조성물 내의 계면활성제의 함량은 전체 조성물 대비 0.01~30중량부, 바람직하게는 5~30중량부일 수 있다. 계면활성제의 함량이 0.01중량부 미만이면 박리가 균일하지 않을 수 있고, 30중량부를 초과하면 거품이 심하게 발생할 뿐만 아니라 환경과 인체에 대한 유해성을 증가시킬 수 있다. The content of the surfactant in the release liquid composition may be 0.01 to 30 parts by weight, preferably 5 to 30 parts by weight, based on the whole composition. If the content of the surfactant is less than 0.01 part by weight, the peeling may not be uniform. If the amount is more than 30 parts by weight, bubbles may be generated severely, and the toxicity to the environment and the human body may be increased.
상기 양이온계면활성제는 수산화테트라메틸암모늄염, 수산화테트라에틸암모늄염, 수산화테트라프로필암모늄염, 수산화테트라부틸암모늄염으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The cationic surfactant may be a single compound or a mixture of two or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, but is not limited thereto.
또한, 본 발명의 일 실시예에 따른 포토레지스트 박리액 조성물은 부식방지제를 더 포함할 수 있다. 부식방지제는 금속 자체만으로 내식성이 부족한 경우 소량 첨가하여 부식을 억제하는 화학물질로, 금속 표면에 흡착하여 부식성 물질의 침입을 방지하기 위한 흡착형 부식억제제가 바람직하며, 질소내의 비공유 전자쌍이 존재하여 금속 표면에서 화학흡착을 용이하게 할 수 있는 아졸계의 부식방지제가 더욱 바람직하다. In addition, the photoresist stripper composition according to an embodiment of the present invention may further include a corrosion inhibitor. The corrosion inhibitor is a chemical substance which suppresses corrosion by adding a small amount when the corrosion resistance is insufficient only by the metal itself. It is preferable that the corrosion inhibitor is adsorbed on the metal surface to prevent the penetration of the corrosive substance. More preferred are azole-based corrosion inhibitors which can facilitate chemical adsorption on the surface.
이러한 부식방지제의 함량은 박리액 전체 조성물 대비 0.01~10중량부인 것이 바람직하다. 부식방지제의 함량이 0.01중량부 미만이면 부식방지력이 저하될 수 있고, 10중량부를 초과하면 심한 거품이 생성될 뿐만 아니라 박리력 또한 저하될 수 있고 비용 상승 및 환겨오염 등의 문제가 발생할 수 있다.The content of such a corrosion inhibitor is preferably 0.01 to 10 parts by weight relative to the total composition of the peeling liquid. When the content of the corrosion inhibitor is less than 0.01 part by weight, corrosion resistance may be deteriorated. When the amount of the corrosion inhibitor exceeds 10 parts by weight, not only bubbles are generated but also peeling force may be lowered. .
상기 부식방지제는 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 벤조트리아졸-5-카르복실산, 니트로벤조트리아졸 및 2-(2H-벤조트리아졸-2-일)-4,5-디-t-부틸페놀, 이미다졸, 2-머캅토벤즈이미다졸, 2,5-디머캅토-1,3,4-티아디졸, 2-머캅토벤조티아졸 및 2-티오우라실로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The corrosion inhibitor may be selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, But are not limited to, benzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole, benzotriazole- Sol and 2- (2H-benzotriazol-2-yl) -4,5-di-t-butylphenol, imidazole, 2- mercaptobenzimidazole, 2,5-dimercapto-1,3,4 Thiadiazole, 2-mercaptobenzothiazole, and 2-thiouracil, or a mixture of two or more thereof, but the present invention is not limited thereto.
위에서 상술한 바와 같이 본 발명에 따른 포토레지스트 박리액 조성물을 이용하면, 인체와 환경에 무해하면서도, 높은 박리효율과 금속 배선의 손상을 최소화하여 포토레지스트를 박리시킬 수 있을 것이다.As described above, the use of the photoresist stripper composition according to the present invention minimizes the detachment efficiency and the damage of the metal wiring while harmless to the human body and the environment, thereby peeling the photoresist.
이하, 본 발명의 일 실시예에 따른 포토레지스트 박리액 조성물에 대한 실시예를 설명한다. 하기 실시예는 본 발명을 설명하기 위한 예시에 불과한 것일 뿐이며, 본 발명의 권리범위가 이러한 실시예로 한정되는 것은 아니다.Hereinafter, embodiments of the photoresist stripper composition according to an embodiment of the present invention will be described. The following examples are merely illustrative of the present invention, and the scope of the present invention is not limited to these examples.
<< 실시예Example 1> 박리액 조성물의 제조 및 박리 성능 평가 1 > Preparation of peeling liquid composition and evaluation of peeling performance
(( 1)시편의1) 제조 Produce
Al 금속배선이 60nm 두께로 패터닝된 유리기판 위에 포지티브형 포토레지스트를 1um의 두께가 되도록 스핀코터(Spin Coater)로 코팅한 후, 150℃에서 10분간 베이킹(Baking)하여 변성레지스트 박막이 코팅된 시편을 제조하였다.A positive photoresist was coated on a glass substrate patterned with an Al metal wiring pattern to a thickness of 60 nm with a spin coater so as to have a thickness of 1 mu m and then baked at 150 DEG C for 10 minutes to obtain a specimen .
(( 2)박리액의2) 제조 Produce
20g의 p-CD와 15g의 모노메탄올아민을 65g의 초순수에 용해시킨 후 용액이 균일하게 되도록 잘 혼합하여 제조하였다. 20 g of p-CD and 15 g of monomethanolamine were dissolved in 65 g of ultrapure water and mixed well to make the solution homogeneous.
(( 3)박리성능3) Peeling performance 평가 evaluation
(2)에 따라 제조된 박리액을 50℃로 가열하였다. (1)에 따라 제조된 시편을 상기 박리액에 1분 동안 침적한 후, 초순수로 세정하고 질소로 건조하였다. 건조된 시편은 육안 및 현미경으로 금속박막 두께와 포토레지스트 잔사의 잔류정도를 측정하여 박리성을 평가하였으며, 그 결과는 박리성 측정기준에 따라 하기 표 1에 나타내었다.(2) was heated to 50 占 폚. (1) was immersed in the exfoliation solution for 1 minute, followed by washing with ultrapure water and drying with nitrogen. The dried specimens were evaluated for peelability by measuring the thickness of the thin metal film and the residual degree of the photoresist residue with a naked eye and a microscope. The results are shown in Table 1 according to the peelability measurement standard.
[박리성 측정기준][Measurement criteria for peelability]
◎: 포토레지스트 잔사가 완전 제거됨◎: Photoresist residue is completely removed
○:포토레지스트 잔사가 흔적량 남아 있음○: Remaining photoresist residue remains
△: 포토레지스트 잔사가 1/3이상 남아 있음?: More than 1/3 of the photoresist residue remains
Ｘ: 포토레지스트 잔사가 제거 안됨X: Photoresist residue not removed
(( 4)내부식성4) Corrosion resistance 평가 evaluation
(2)에 따라 제조된 박리액을 50℃로 가열하고, (3)에 의해 완벽히 박리된 시편을 상기 박리액에 10분간 침적한 후, 초순수로 세정하고 질소로 건조하였다. 건조된 시편은 현미경으로 금속박막 두께와 표면의 변화를 측정하여 부식성을 평가하였으며, 그 결과는 금속 부식성 측정기준에 따라 하기 표 1에 나타내었다.(2) was heated to 50 占 폚, and the specimen completely peeled off by (3) was immersed in the peeling solution for 10 minutes, followed by washing with ultrapure water and drying with nitrogen. The dried specimens were evaluated for corrosion by measuring the thickness and surface changes of the metal thin films with a microscope and the results are shown in Table 1 according to the metal corrosion measurement standard.
[금속 내부식성 측정기준] [Criteria for measurement of corrosion resistance in metal]
◎: 금속 박막 두께 및 표면에 변화 없음◎: No change in metal thin film thickness and surface
○:금속 박막 두께 동일 및 표면에 미약한 부식 발생○: Thin metal film thickness and slight corrosion on the surface
△:금속 박막 두께 일부감소 및 표면에 부식 발생DELTA: Partial reduction of metal thin film thickness and corrosion on the surface
Ｘ: 금속 박막 두께 1/2 이상 감소X: Reduction of metal thin film thickness by more than 1/2
<< 실시예Example 2-14, 2-14, 비교예Comparative Example 1- One- 6> 박리액6> 조성물의 제조 및 박리성능 평가 Evaluation of composition production and peeling performance
하기 표 1에 기재된 조성비에 따라 박리액을 제조하여 사용한 점을 제외하고는 상기 실시예 1과 동일한 방법으로 포토레지스트 박리액 조성물의 박리성능을 평가하였다.The peeling performance of the photoresist stripper composition was evaluated in the same manner as in Example 1, except that a stripper was prepared and used according to the composition ratios shown in Table 1 below.
상기 실시예 1 내지 14, 비교예 1 내지 6에 따른 박리 성능 및 내부식성을 평가한 결과는 하기 표 1과 같다.The peeling performance and corrosion resistance according to Examples 1 to 14 and Comparative Examples 1 to 6 were evaluated, and the results are shown in Table 1 below.
[표 1][Table 1]
상기 표 1을 살펴보면, 비교예 1 내지 3과 같이 물 이외에 염기성 화합물인 모노에탄올아민(MEA)만을 함유하거나(비교예 1), 염기성 화합물인 모노에탄올아민(MEA)과 극성용매인 N,N-디메틸프로피온아마이드(DMPA)를 함유하거나(비교예 2), 염기성 화합물인 모노에탄올아민(MEA)과 계면활성제인 메틸디글리콜(MDG)을 함유(비교예 3)한 박리액을 사용할 경우, 포토레지스트 잔사가 거의 제거되지 않거나 1/2 이상이 남는 등 박리 성능이 매우 낮다는 것을 알 수 있다. 따라서, 포토레지스트 박리성능 자체가 현저히 낮으므로 금속배선에 대한 부식성 여부는 평가할 필요도 없을 것이다.The results are shown in Table 1. The results are shown in Table 1. The results are shown in Table 1. The results are shown in Table 1. The results are shown in Table 1, In the case of using a peeling solution containing dimethyl propionamide (DMPA) (Comparative Example 2) or a monoethanolamine (MEA) as a basic compound and methyldiglycol (MDG) as a surface active agent (Comparative Example 3) It can be seen that the peeling performance is extremely low, for example, the residue is hardly removed or more than 1/2 is left. Therefore, the photoresist peeling performance itself is remarkably low, so it is not necessary to evaluate whether or not the metal wiring is corrosive.
한편, 비교예 4 내지 6을 살펴보면, 비교예 2 및 3과 달리 극성용매(MEA)와 계면활성제(MDG 또는 BDG)를 모두 함유하는 박리액의 경우 박리 성능이 향상되는 것을 확인할 수 있지만 금속배선은 일부가 녹는다는 것을 알 수 있다. 특히, 비교예 6과 같이 부식방지제를 박리액 조성물의 일성분으로 사용하더라도 비교예 5와 비교하여 내부식성이 크게 향상되지 않는다는 것을 알 수 있으며, 물 함량이 20% 이하이므로 박리액이 과량의 유기성분을 함유하고 있어 폐박리액 처리에 따른 경제적 손실 및 환경저해 등과 같은 문제가 여저히 남아 있다. On the other hand, in Comparative Examples 4 and 6, peeling performance was improved in the case of a peeling liquid containing both a polar solvent (MEA) and a surfactant (MDG or BDG) unlike Comparative Examples 2 and 3, It can be seen that a part melts. In particular, even when the corrosion inhibitor is used as one component of the peeling liquid composition as in Comparative Example 6, it can be seen that the corrosion resistance is not significantly improved as compared with Comparative Example 5, and since the water content is 20% or less, And thus there are still problems such as economic loss due to treatment of lung exfoliation solution and environmental deterioration.
반면, 비교예 1과 본 발명의 실시예 1을 비교해보면, 시클로덱스트린 유도체를 박리액 조성물의 일성분으로 사용할 경우 박리성능이 향상되는 것을 알 수 있으며, 특히 유기 염기성 화합물에 무기 염기성 화합물을 극소량 혼합 사용시 박리성능이 월등히 향상되며, 내부식성 또는 향상되는 것을 확인할 수 있다. 즉, 실시예 2를 통해 사이클로덱스트린 유도체를 함유한 박리액을 사용할 경우, 극성용매, 계면활성제 및 부식방지제 등을 사용하지 않더라도 우수한 박리성능 및 내부식성을 유지할 수 있으므로, 유기용매 및 부식방지제 사용으로 인한 환경문제, 인체 유해 문제, 제조원가 문제 등을 해결할 수 있다.On the other hand, a comparison between Comparative Example 1 and Example 1 of the present invention shows that the use of the cyclodextrin derivative as a component of the peeling liquid composition improves the peeling performance, and in particular, the inorganic basic compound is mixed with the organic basic compound in a very small amount It can be confirmed that the peeling performance in use is remarkably improved and the corrosion resistance is improved or improved. That is, when a peeling solution containing a cyclodextrin derivative is used through Example 2, excellent peeling performance and corrosion resistance can be maintained even without using a polar solvent, a surfactant, a corrosion inhibitor, and the like, so that the use of an organic solvent and a corrosion inhibitor It is possible to solve the environmental problem, the human body problem, and the manufacturing cost problem.
박리액 조성물의 일성분으로 동일한 시클로덱스트린 유도체(p-CD)를 동량(20중량%) 사용한 실시예 1 내지 실시예 3, 실시예 11 및 실시예 20을 비교해보면, 박리액 조성물로 염기성 화합물뿐만 아니라 극성용매(실시예 3), 부식방지제(실시예 11) 및 계면활성제(실시예 12) 중 적어도 하나를 포함할 경우 박리성능과 내부식성이 모두 월등히 우수하다는 것을 확인할 수 있다.Comparing Examples 1 to 3, Example 11, and Example 20 using the same cyclodextrin derivative (p-CD) as one component of the release liquid composition in the same amount (20% by weight) It can be confirmed that both of the peeling performance and the corrosion resistance are remarkably excellent when at least one of the polar solvent (Example 3), the corrosion inhibitor (Example 11) and the surfactant (Example 12) is included.
또한, 실시예 3 내지 9에서 확인할 수 있는 것과 같이, 동일 동량의 염기성 화합물과 극성용매를 함유하는 박리액의 경우, 시클로덱스트린 또는 이의 유도체 종류에 따라 박리성능이 달라지는 것을 알 수 있다. 즉, 알파-시클로덱스트린, 베타-시클로덱스트린, 감마-시클로덱스트린 및 설포부틸에테르-베타-시클로덱스트린보다는 (2-히드록시프로필)-베타-시클로덱스트린(p-CD)을 함유한 박리액의 경우(실시예 3 내지 5) 내부식성 뿐만 아니라 박리성능도 월등히 향상된다는 것을 알 수 있다. 이때, 실시예 3 내지 5에서 확인할 수 있는 것과 같이, 극성용매와 계면활성제의 양을 일정하게 동량 사용시 시클로덱스트린을 적게 사용하고 물의 함량을 증가시키더라도 박리성능과 부식성이 모두 우수하게 유지된다는 것을 알 수 있다.Further, as can be seen in Examples 3 to 9, in the case of the peeling liquid containing the same basic compound and polar solvent, the peeling performance is different depending on the type of cyclodextrin or its derivatives. That is, in the case of a peeling liquid containing (2-hydroxypropyl) -beta-cyclodextrin (p-CD) rather than alpha-cyclodextrin, beta-cyclodextrin, gamma-cyclodextrin and sulfobutyl ether-beta-cyclodextrin (Examples 3 to 5) It can be seen that not only corrosion resistance but also peeling performance is remarkably improved. As can be seen in Examples 3 to 5, when the same amounts of the polar solvent and the surfactant were used in the same amounts, the cyclodextrin was less used and the peeling performance and the corrosion resistance were both excellent even when the water content was increased. .
한편, 실시예 13과 실시예 14를 비교해보면, 계면활성제인 수산화테트라메틸암모늄을 소량 함유한 박리액을 사용할 경우, 박리성능은 모두 우수하지만 염기성 화합물의 조성에 따라 부식성에 영향을 미치는 것을 알 수 있다. 즉, 부식방지제(BTZ) 보다는 염기성 화합물의 무기 염기성 화합물 성분을 적절하게 선택사용할 경우 내부식성이 월등히 향상되는 것을 알 수 있다.On the other hand, when Example 13 and Example 14 were compared, it was found that when the peeling solution containing a small amount of tetramethylammonium hydroxide as the surfactant was used, the peeling performance was excellent, but the corrosion resistance was affected by the composition of the basic compound have. That is, when the inorganic basic compound component of the basic compound is appropriately selected rather than the corrosion inhibitor (BTZ), the corrosion resistance is remarkably improved.
상기 표 1로부터 본 발명의 실시예와 같이 시클로덱스트린 또는 시클로덱스트린 유도체를 박리액의 일성분으로 사용시 포토레지스트의 박리성능 및 금속배선에 대한 내부식성 향상과 함께 물을 주성분으로 하는 수계 박리액 제조가 가능하므로, 환경 및 인체에 유해한 유기성분 및 부식방지제의 사용을 최소화할 수 있다.From Table 1, it can be seen that when the cyclodextrin or the cyclodextrin derivative is used as one component of the peeling liquid, the peeling performance of the photoresist and the corrosion resistance against the metal wiring are improved and the production of the water- It is possible to minimize the use of organic components and corrosion inhibitors harmful to the environment and human body.
이상의 설명은 본 발명을 예시적으로 설명한 것에 불과한 것으로, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않은 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서, 본 발명에 개시된 실시예들은 본 발명의 기술사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등하거나 균등한 범위 내에 있는 모든 기술사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the claims below, and all technical ideas within the scope of equivalents or equivalents thereof should be construed as being included in the scope of the present invention.
Claims (11)
<화학식 1>
상기 화학식 1에서,
n은 6 내지 8의 정수이며,
R1, R2 및 R3 는 서로 독립적으로 수소, 치환 또는 비치환된 알킬기, 술폰산기, 아실기, 치환 또는 비치환된 벤질기 및 치환 또는 비치환된 벤조일기로 이루어진 군에서 선택된다.A photoresist stripper composition comprising a compound represented by the following general formula (1) and a basic compound:
≪ Formula 1 >
In Formula 1,
n is an integer of 6 to 8,
R 1 , R 2 and R 3 are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group, a sulfonic acid group, an acyl group, a substituted or unsubstituted benzyl group and a substituted or unsubstituted benzoyl group.
상기 알킬기는 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환될 수 있는 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the alkyl group may be further substituted with at least one substituent selected from the group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group, and an amino group substituted or unsubstituted with an alkyl group.
극성 유기용매를 더 포함하는 포토레지스트 박리액 조성물.The method according to claim 1,
A photoresist stripper liquid composition further comprising a polar organic solvent.
계면활성제 및 부식방지제 중 적어도 하나를 더 포함하는 포토레지스트 박리액 조성물.The method according to claim 1,
A surfactant, and a corrosion inhibitor.
상기 염기성 화합물은 유기 염기성 화합물이거나 유기 염기성 화합물과 무기 염기성 화합물이 혼합된 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the basic compound is an organic basic compound or a mixture of an organic basic compound and an inorganic basic compound.
상기 극성용매는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N, N-디메틸프로피온아미드, N-메틸 피로리돈, N-에틸 피롤리돈, r-부티로락톤, 디메틸설폭사이드, 설포란, 에틸렌글리콜모노메틸에테르, 에릴렌글리콜모노에틸에테르, 에틸렌글리골모노이소프로필 에테르, 에릴렌글리콜모노부틸 에테르, 트리에틸렌글리콜모노에틸 에테르, 트리에틸렌글리콜모노이소프로필 에테르, 트리에틸렌글리콜모노부틸 에테르, 폴리에틸렌글리콜모노메틸 에테르, 폴리에틸렌글리콜모노이소프로필 에테르, 폴리에틸렌글리콜모노부틸 에테르, 프로필렌글리콜모노메틸 에테르, 프로필렌글리콜모노이소프로필 에테르, 프로필렌글리콜모노부틸 에테르, 및 프로필렌글리콜모노메틸 에테르 아세테이트로 이루어진 군에서 하나 이상 선택되며,
상기 염기성 화합물은 모노메틸아민, 디메틸아민, 트리에틸아민, 디이소프로필에틸아민, 모노에탄올아민, 모노이소프로판올, 디에탄올아민, 트리에탄올아민, 2-(2-아미노에톡시)에탄올, 2-아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 2-메틸아미노에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(3-아미노프로필)몰포린, 2-메틸피페라진, 1-메틸피페라진, 1-아미노-4-메틸피페라진, 1-벤질 피페라진, 1-페닐 피페라진, 테크라메틸구아니딘, 1,8-디아자비시클로운데크-7-엔, 및 1,5-디아자비시클로(4,3,0)논-5-엔으로 이루어진 유기 염기성 화합물 군에서 하나 이상 선택되거나; 수산화암모늄, 수산화나트륨, 수산화칼륨, 인산 수소 이암모늄((NH4)2HPO4), 인산 이수소 암모늄((NH4)H2PO4), 인산 삼암모늄((NH4)3PO4), 인산 수소 이나트륨(Na2HPO4), 인산 이수소 나트륨(NaH2PO4), 인산 삼나트륨(Na3PO4), 인산 수소 이칼륨(K2HPO4), 인산 이수소 칼륨(KH2PO4),및 인산 삼칼륨(K3PO4)으로 이루어진 군에서 무기 염기성 화합물 군에서 하나 이상 선택되거나; 상기 유기 염기성 화합물 군에서 선택된 적어도 하나와 상기 무기 염기성 화합물 군에서 선택된 적어도 하나가 혼합된 혼합물인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method of claim 3,
The polar solvent may be selected from the group consisting of formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, erylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, Triethylene glycol monoethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monoisopropyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol mono Isopropyl ether, propylene glycol monobutyl ether, and propylene glycol monomethyl ether acetate At least one group selected from the group consisting of
The basic compound may be selected from the group consisting of monomethylamine, dimethylamine, triethylamine, diisopropylethylamine, monoethanolamine, monoisopropanol, diethanolamine, triethanolamine, 2- (2-aminoethoxy) (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenyl (2-methylpiperazin-1-yl) One in the group of organic basic compounds consisting of piperazine, tetramethylguanidine, 1,8-diazabicycloundec-7-ene and 1,5-diazabicyclo (4,3,0) Or more; Ammonium hydroxide, ammonium hydroxide, sodium hydroxide, potassium hydrogen phosphate ((NH 4) 2 HPO 4 ), ammonium dihydrogen phosphate, ammonium ((NH 4) H 2 PO 4), tricalcium phosphate ((NH 4) 3 PO 4 ) (Na 2 HPO 4 ), sodium dihydrogen phosphate (NaH 2 PO 4 ), trisodium phosphate (Na 3 PO 4 ), potassium dihydrogen phosphate (K 2 HPO 4 ), potassium dihydrogen phosphate 2 PO 4 ), and tripotassium phosphate (K 3 PO 4 ), or one or more selected from the group of inorganic basic compounds; Wherein the mixture is a mixture of at least one selected from the organic basic compound group and at least one selected from the inorganic basic compound group.
상기 계면활성제는 수산화테트라메틸암모늄염, 수산화테트라에틸암모늄염, 수산화테트라프로필암모늄염, 및 수산화테트라부틸암모늄 염으로 이루어진 군에서 적어도 하나 이상 선택되며,
상기 부식방지제는 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 벤조트리아졸-5-카르복실산, 니트로벤조트리아졸 및 2-(2H-벤조트리아졸-2-일)-4,5-디-t-부틸페놀, 이미다졸, 2-머캅토벤즈이미다졸, 2,5-디머캅토-1,3,4-티아디졸, 2-머캅토벤조티아졸 및 2-티오우라실로 이루어진 군에서 적어도 하나 이상 선택되는 것을 특징으로 하는 포토레지스트 박리액 조성물.5. The method of claim 4,
The surfactant is at least one selected from the group consisting of tetramethylammonium hydroxide salt, tetraethylammonium hydroxide salt, tetrapropylammonium hydroxide salt and tetrabutylammonium hydroxide salt,
The corrosion inhibitor may be selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, But are not limited to, benzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole, benzotriazole- Sol and 2- (2H-benzotriazol-2-yl) -4,5-di-t-butylphenol, imidazole, 2- mercaptobenzimidazole, 2,5-dimercapto-1,3,4 -Thiadiazole, 2-mercaptobenzothiazole, and 2-thiouracil. 2. The photoresist stripper composition according to claim 1,
전체 조성물 100 중량부 대비 상기 화학식 1로 표시되는 화합물은 1~50중량부이고, 상기 염기성 화합물은 1~30 중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the amount of the compound represented by Formula 1 is 1 to 50 parts by weight and the amount of the basic compound is 1 to 30 parts by weight based on 100 parts by weight of the total composition.
전체 조성물 100 중량부 대비 상기 극성유기용매는 1~60중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method of claim 3,
Wherein the polar organic solvent is 1 to 60 parts by weight based on 100 parts by weight of the total composition.
전체 조성물 100 중량부 대비 상기 계면활성제는 0.01~30중량부이고, 상기 부식방지제는 0.01~10중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.5. The method of claim 4,
Wherein the surfactant is 0.01 to 30 parts by weight based on 100 parts by weight of the total composition, and the corrosion inhibitor is 0.01 to 10 parts by weight.
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