KR20180120397A - Stripping compositions for photoresist - Google Patents
Stripping compositions for photoresist Download PDFInfo
- Publication number
- KR20180120397A KR20180120397A KR1020170054245A KR20170054245A KR20180120397A KR 20180120397 A KR20180120397 A KR 20180120397A KR 1020170054245 A KR1020170054245 A KR 1020170054245A KR 20170054245 A KR20170054245 A KR 20170054245A KR 20180120397 A KR20180120397 A KR 20180120397A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- ether
- parts
- weight
- basic compound
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 40
- 230000007797 corrosion Effects 0.000 claims abstract description 42
- 238000005260 corrosion Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 42
- 150000007514 bases Chemical class 0.000 claims description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 19
- -1 monoisopropanol Chemical compound 0.000 claims description 17
- 239000003112 inhibitor Substances 0.000 claims description 16
- 239000002798 polar solvent Substances 0.000 claims description 14
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 11
- 239000004094 surface-active agent Substances 0.000 claims description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 5
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 4
- 125000002252 acyl group Chemical group 0.000 claims description 4
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012964 benzotriazole Substances 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 3
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 3
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 2
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 claims description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- IQXXEPZFOOTTBA-UHFFFAOYSA-N 1-benzylpiperazine Chemical compound C=1C=CC=CC=1CN1CCNCC1 IQXXEPZFOOTTBA-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- VSTXCZGEEVFJES-UHFFFAOYSA-N 1-cycloundecyl-1,5-diazacycloundec-5-ene Chemical compound C1CCCCCC(CCCC1)N1CCCCCC=NCCC1 VSTXCZGEEVFJES-UHFFFAOYSA-N 0.000 claims description 2
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 claims description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 2
- WQFOZZKDRWMPOS-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4,5-ditert-butylphenol Chemical compound C1=C(C(C)(C)C)C(C(C)(C)C)=CC(O)=C1N1N=C2C=CC=CC2=N1 WQFOZZKDRWMPOS-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- FETMDPWILVCFLL-UHFFFAOYSA-N 2-[2-(2-propan-2-yloxyethoxy)ethoxy]ethanol Chemical compound CC(C)OCCOCCOCCO FETMDPWILVCFLL-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- PWORFEDVDWBHSJ-UHFFFAOYSA-N 2-methylbenzotriazole Chemical compound C1=CC=CC2=NN(C)N=C21 PWORFEDVDWBHSJ-UHFFFAOYSA-N 0.000 claims description 2
- JOMNTHCQHJPVAZ-UHFFFAOYSA-N 2-methylpiperazine Chemical compound CC1CNCCN1 JOMNTHCQHJPVAZ-UHFFFAOYSA-N 0.000 claims description 2
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 2
- GBSGXZBOFKJGMG-UHFFFAOYSA-N 3-propan-2-yloxypropan-1-ol Chemical compound CC(C)OCCCO GBSGXZBOFKJGMG-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- RJWLLQWLBMJCFD-UHFFFAOYSA-N 4-methylpiperazin-1-amine Chemical compound CN1CCN(N)CC1 RJWLLQWLBMJCFD-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- QEXSWSOTYGJQBX-UHFFFAOYSA-N NCCOC1N(CCNC1)CCO Chemical compound NCCOC1N(CCNC1)CCO QEXSWSOTYGJQBX-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- 239000001506 calcium phosphate Substances 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 claims description 2
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims description 2
- 229940078499 tricalcium phosphate Drugs 0.000 claims description 2
- 229910000391 tricalcium phosphate Inorganic materials 0.000 claims description 2
- 235000019731 tricalcium phosphate Nutrition 0.000 claims description 2
- 229910000404 tripotassium phosphate Inorganic materials 0.000 claims description 2
- 235000019798 tripotassium phosphate Nutrition 0.000 claims description 2
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 2
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 2
- 101100283604 Caenorhabditis elegans pigk-1 gene Proteins 0.000 claims 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 claims 1
- 235000019797 dipotassium phosphate Nutrition 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229920000858 Cyclodextrin Polymers 0.000 abstract description 32
- 229910052751 metal Inorganic materials 0.000 abstract description 32
- 239000002184 metal Substances 0.000 abstract description 32
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 239000000126 substance Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000004299 exfoliation Methods 0.000 description 6
- 150000007529 inorganic bases Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- UGTZMIPZNRIWHX-UHFFFAOYSA-K sodium trimetaphosphate Chemical compound [Na+].[Na+].[Na+].[O-]P1(=O)OP([O-])(=O)OP([O-])(=O)O1 UGTZMIPZNRIWHX-UHFFFAOYSA-K 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- 239000001116 FEMA 4028 Substances 0.000 description 5
- 229960004853 betadex Drugs 0.000 description 5
- 150000007530 organic bases Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 description 4
- 239000003093 cationic surfactant Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 4
- 230000002588 toxic effect Effects 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 235000011175 beta-cyclodextrine Nutrition 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920001282 polysaccharide Polymers 0.000 description 3
- 239000003586 protic polar solvent Substances 0.000 description 3
- 235000019832 sodium triphosphate Nutrition 0.000 description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 description 2
- 229940043377 alpha-cyclodextrin Drugs 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 2
- 229940097362 cyclodextrins Drugs 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- GDSRMADSINPKSL-HSEONFRVSA-N gamma-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO GDSRMADSINPKSL-HSEONFRVSA-N 0.000 description 2
- 229940080345 gamma-cyclodextrin Drugs 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- PSGAAPLEWMOORI-PEINSRQWSA-N medroxyprogesterone acetate Chemical compound C([C@@]12C)CC(=O)C=C1[C@@H](C)C[C@@H]1[C@@H]2CC[C@]2(C)[C@@](OC(C)=O)(C(C)=O)CC[C@H]21 PSGAAPLEWMOORI-PEINSRQWSA-N 0.000 description 2
- 150000004712 monophosphates Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000015227 regulation of liquid surface tension Effects 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
- C11D11/0005—Special cleaning or washing methods
- C11D11/0011—Special cleaning or washing methods characterised by the objects to be cleaned
- C11D11/0023—"Hard" surfaces
- C11D11/0047—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2096—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/40—Dyes ; Pigments
- C11D3/42—Brightening agents ; Blueing agents
-
- C11D2111/22—
Abstract
Description
본 발명은 포토레지스트 박리액 조성물에 관한 것으로서, 더욱 상세하게는 포토레지스트 박리성능과 금속 배선에 대한 내부식성이 우수하면서도 친환경적인 포토레지스트 박리액 조성물에 관한 것이다. The present invention relates to a photoresist stripping liquid composition, and more particularly, to a photoresist stripping liquid composition having excellent photoresist stripping performance and corrosion resistance against metal wiring while being environmentally friendly.
포토레지스트(photoresist)는 빛을 조사하면 화학 변화를 일으키는 수지로서, PAC(photoactive compound, 감광제), 수지, 첨가제, 용매 등으로 이루어져 있다. 이러한 포토레지스트는 포토레지스트 전극의 패턴을 형성하기 위한 에칭 공정 후 박리액에 의해 제거된다.Photoresist is a resin that causes chemical changes when irradiated with light. It is composed of PAC (photoactive compound), resin, additive, solvent and so on. Such a photoresist is removed by an exfoliation liquid after an etching process for forming a pattern of the photoresist electrode.
일반적으로 박리액은 염기성 성분, 극성 비양자성 용매, 양성자성 용매, 부식방지제, 소포제 등으로 구성되어 있다. 박리액 조성물의 일성분인 염기성 성분은 가교(Cross linked)된 포토레지스트의 결합을 끊어주는 역할을 하며, 극성 비양자성 용매는 결합이 끊어진 PAC와 노볼락 수지(Novolak Resin)를 해리시키는 역할을 하고, 양성자성 용매(Protic Solvent)는 노볼락 수지를 용해시키는 역할을 한다. 또한, 박리액 중의 부식방지제는 금속배선 전극의 부식을 방지하는 역할을 하고, 소포제는 공정 중 기포 발생을 방지하는 역할을 한다.In general, the exfoliating liquid is composed of a basic component, a polar aprotic solvent, a protic solvent, a corrosion inhibitor, an antifoaming agent and the like. The basic component, which is one component of the release liquid composition, serves to break the bond of the cross-linked photoresist, and the polar aprotic solvent serves to dissociate the PAC and the Novolak resin, , Protic Solvent (Protic Solvent) serves to dissolve novolac resin. In addition, the corrosion inhibitor in the exfoliation liquid serves to prevent corrosion of the metal wiring electrode, and the antifoaming agent serves to prevent the occurrence of bubbles during the process.
이러한 포토레지스트 박리액은 높은 박리 성능과 내부식성이 요구된다. 즉, 포토레지스트 박리액은 저온에서 단시간 내에 포토레지스트 성분을 박리할 수 있어야 하고 세정 후에도 기판상에 잔류물이 남지 않도록 박리 효율이 높아야 할 뿐만 아니라, 포토레지스트 하부층의 금속 배선에 대한 부식 손상을 최소화할 것이 요구된다. Such a photoresist peeling liquid is required to have high peeling performance and corrosion resistance. That is, the photoresist stripper must be capable of stripping the photoresist component at a low temperature within a short time, and must not only have high stripping efficiency so that no residue remains on the substrate even after cleaning, but also minimizes corrosion damage to the metal wiring of the photoresist lower layer Is required.
한편, 포토레지스트 박리액 조성물은 사용하는 용매의 주성분이 유기물질인 유기계 박리액과 물이 주성분이 수계 박리액으로 나눌 수 있다.On the other hand, the photoresist stripper solution composition can be divided into an organic stripper solution in which the main component of the solvent used is an organic material, and water, and a main component thereof is an aqueous stripper solution.
유기계 박리액 조성물의 경우, 박리 능력을 향상시키기 위해 비양성자성 극성용매로서 디메틸술폭시드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈 등과 양자성 용매로 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르 및 디프로필렌글리콜 모노부틸에테르 등의 글리콜 에테르류를 주성분으로 사용하고 있다. 따라서, 박리액의 제조원가가 상승할 뿐만 아니라 글리콜 에테르류 등의 성분들은 중독성이 강하여 뇌와 신경에 해를 끼치는 등 환경적으로 매우 유해하다는 문제점이 있다.In the case of the organic release solution composition, in order to improve the peeling ability, an aprotic polar solvent such as dimethylsulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone or the like and a protonic solvent Glycol ethers such as diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether and dipropylene glycol monobutyl ether are used as the main components. Therefore, not only the manufacturing cost of the exfoliation solution is increased but also components such as glycol ethers are highly toxic and harmful to the brain and nerves.
반면, 물을 주용매로 사용하는 수계 박리액의 경우 제조 원가를 절감할 수 있을뿐만 아니라, 독성이 강한 유기성분의 사용이 적으므로 폐수액 처리과정 및 환경적 측면에서 장점이 있으나, 유기계 박리액에 비해 박리성능이 떨어지고 Al 및 Cu 등과 같은 금속 배선에 대한 부식성이 높다는 단점이 있다.On the other hand, in the case of a water-based exfoliation solution using water as a main solvent, not only the manufacturing cost can be reduced but the use of the organic component having high toxicity is small, which is advantageous in terms of the treatment process of wastewater and environment, The peeling performance is lowered and the corrosion resistance against metal wiring such as Al and Cu is high.
최근 환경문제가 대두되면서 친환경적 박리액 사용에 대한 요구가 높아지고 있는바, 물을 주용매로 사용하되 박리성능 및 내부식성을 향상시킬 수 있고 제조원가를 절감할 수 있는 수계 박리액 조성물에 대한 연구개발이 필요하다.Recently, as environmental problems have been raised, there is a growing demand for environmentally friendly exfoliating liquids. As a result, research and development on a water-based exfoliating liquid composition capable of improving the peeling performance and corrosion resistance and reducing the manufacturing cost by using water as a main solvent need.
따라서, 상기 문제점을 해결하기 위하여, 본 발명은 물을 용매의 주성분으로 사용하되 박리성능 및 내부식성이 높고 친환경적인 박리액 조성물을 제공하는 것을 목적으로 한다.DISCLOSURE Technical Problem Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a peeling liquid composition which is water-soluble as a main component of a solvent and has high peelability and corrosion resistance and is environmentally friendly.
상기 과제를 해결하기 위한 본 발명의 일측면은, 하기 화학식 1로 표시되는 화합물과 염기성 화합물을 포함하는 포토레지스트 박리액 조성물을 제공한다.According to an aspect of the present invention, there is provided a photoresist stripper composition comprising a compound represented by Chemical Formula 1 and a basic compound.
<화학식 1>≪ Formula 1 >
본 발명의 다른 측면은, 인산화-시클로덱스트린 또는 인산화-시클로덱스트린 유도체를 포함하는 포토레지스트 제거용 수계 박리액 조성물을 제공한다.Another aspect of the present invention provides a water-based exfoliant composition for removing photoresist comprising phosphorylated-cyclodextrin or phosphorylated-cyclodextrin derivatives.
본 발명에 따르면, 박리액 조성물의 일성분으로 인산화-시클로덱스트린 또는 그 유도체를 사용함으로써, 박리성능 및 내부식성이 우수한 박리액 조성물을 제공할 수 있다. 이러한 효과는 시클로덱스트린 골격에 도입된 인산기에 의한 높은 계면 활성력 및 pH 완충 효과에 따른 금속부식 억제에 의한 것일 수 있다.According to the present invention, by using phosphorylated-cyclodextrin or a derivative thereof as one component of the release liquid composition, it is possible to provide a release liquid composition having excellent peeling performance and corrosion resistance. This effect may be due to the high interfacial activity of the phosphate group introduced into the cyclodextrin skeleton and the inhibition of metal corrosion due to the pH buffering effect.
또한, 본 발명에 따르면, 제조원가 상승 및 환경문제를 초래하는 과량의 유기용매 대신 물을 용매의 주성분으로 사용하고 물에 잘 용해되는 시클로덱스트린 또는 그 유도체를 함유한 수계 박리액 제조가 가능하므로, 박리액 조성물의 제조원가를 절감할 수 있을 뿐만 아니라 인체 및 환경에 대한 유해성이 적은 친환경적인 박리액을 제공할 수 있다.In addition, according to the present invention, it is possible to prepare an aqueous stripping solution containing cyclodextrin or a derivative thereof, which is soluble in water, by using water as a main component of the solvent in place of an excessive amount of organic solvent, It is possible to reduce the production cost of the liquid composition and to provide an environmentally friendly peeling liquid which is less harmful to humans and the environment.
도 1은 본 발명의 일 실시예에 따라 제조된 인산화-시클로덱스트린(b-CD-P3)에 대한 IR 자료이다.1 is IR data of phosphorylated-cyclodextrin (b-CD-P3) prepared according to one embodiment of the present invention.
이하, 본 발명의 일측면에 따른 포토레지스트 박리액 조성물에 대하여 상세히 설명한다.Hereinafter, the photoresist stripper composition according to one aspect of the present invention will be described in detail.
본 발명의 일 측면에 따른 박리액 조성물은 인산화-시클로덱스트린 또는 그 유도체를 포함한다. 더욱 상세하게는, 본 발명의 박리액 조성물은 (a) 인산화-시클로덱스트린 및/또는 그 유도체, (b) 염기성 화합물 및 (c) 물을 포함하며, 극성용매, 계면활성제, 부식방지제 등을 더 포함할 수 있다.The release liquid composition according to one aspect of the present invention includes phosphorylated-cyclodextrin or a derivative thereof. More specifically, the release liquid composition of the present invention comprises (a) phosphorylated-cyclodextrin and / or a derivative thereof, (b) a basic compound and (c) water and further comprises a polar solvent, a surfactant, .
바람직하게는, 박리액 조성물은 전체 박리액 조성물 대비 1~50 중량부의 인산화-시클로덱스트린 및/또는 그 유도체, 1~30 중량부의 염기성 화합물 및 10~80 중량부의 물을 포함할 수 있고, 1~60 중량부의 극성용매, 0.01~30 중량부의 계면활성제 및 0.01~10 중량부의 부식방지제를 더 포함할 수 있다.Preferably, the release liquid composition may contain 1 to 50 parts by weight of phosphorylated-cyclodextrin and / or a derivative thereof, 1 to 30 parts by weight of basic compound and 10 to 80 parts by weight of water based on the total exfoliant composition, 60 parts by weight of a polar solvent, 0.01 to 30 parts by weight of a surfactant, and 0.01 to 10 parts by weight of a corrosion inhibitor.
먼저, 본 발명의 박리액의 일성분인 인산화-시클로덱스트린 또는 그 유도체(이하 인산화-시클로덱스트린 화합물 또는 인산화-CDs라고도 표기함)에 대하여 설명한다.First, phosphorylated-cyclodextrin or a derivative thereof (hereinafter also referred to as a phosphorylated-cyclodextrin compound or phosphorylated-CDs), which is one component of the exfoliation solution of the present invention, will be described.
본 발명의 박리액 조성물의 일성분인 인산화-시클로덱스트린 또는 그 유도체는 하기 화학식 1로 표시되는 화합물일 수 있다.The phosphorylated-cyclodextrin or its derivative, which is one component of the release liquid composition of the present invention, may be a compound represented by the following general formula (1).
<화학식 1>≪ Formula 1 >
상기 화학식 1에서, n은 6 내지 8의 정수이며, R1은 하기 화학식 2로 표시된다.In the general formula (1), n is an integer of 6 to 8, and R 1 is represented by the following general formula (2).
<화학식 2>(2)
상기 화학식 2에서, m은 0 내지 2의 정수이며, X, Y, 및 Z는 서로 독립적으로 -OH 또는 -OM이고, 여기서 M은 Li, Na, 또는 K이다. m이 2인 경우, 각각의 Z는 서로 동일하거나 상이할 수 있다.In Formula 2, m is an integer of 0 to 2, and X, Y, and Z are each independently -OH or -OM, wherein M is Li, Na, or K. When m is 2, each Z may be the same or different from each other.
R2 및 R3는 서로 독립적으로 수소, 치환 또는 비치환된 알킬기, 술폰산기, 아실기, 치환 또는 비치환된 벤질기 및 치환 또는 비치환된 벤조일기로 이루어진 군에서 선택된다.R 2 and R 3 are independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group, a sulfonic acid group, an acyl group, a substituted or unsubstituted benzyl group and a substituted or unsubstituted benzoyl group.
상기 화학식 1에서, n=6인 경우는 인산화-알파-시클로덱스트린 또는 그 유도체, n=7인 경우는 인산화-베타-시클로덱스트린 또는 그 유도체, n=8인 경우는 인산화-감마-시클로덱스트린 또는 그 유도체에 해당한다.In the above formula 1, phosphorylated-alpha-cyclodextrin or a derivative thereof when n = 6, phosphorylated-beta-cyclodextrin or a derivative thereof when n = 7, phosphorylated-gamma-cyclodextrin when n = 8, Corresponding to the derivatives thereof.
상기 화학식 2에서, X, Y 및 Z가 -OH인 경우, R1은 하기 화학식 3으로 표시될 수 있다.In the above formula (2), when X, Y and Z are -OH, R 1 may be represented by the following formula (3).
<화학식 3>(3)
바람직하게는, X, Y 및 Z가 각각 -OM인 경우, R1은 하기 화학식 4로 표시될 수 있다. Preferably, when X, Y and Z are each -OM, R 1 may be represented by the following formula (4).
<화학식 4>≪ Formula 4 >
R2 및 R3가 알킬기인 경우, 바람직하게는 C1-C10의 알킬기일 수 있고, 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환될 수 있다.When R 2 and R 3 are alkyl groups, they may be preferably a C 1 -C 10 alkyl group, and at least one group selected from the group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group and an amino group substituted or unsubstituted with an alkyl group May be further substituted with a substituent.
R2 및 R3가 'RCO-'로 표시될 수 있는 아실기인 경우, 바람직하게는 C1-C10의 아실기일 수 있고, 여기서 R은 H(수소)이거나 치환 또는 비치환된 알킬기일 수 있다.When R 2 and R 3 are an acyl group which may be represented by 'RCO-', it may preferably be a C 1 -C 10 acyl group, wherein R may be H (hydrogen) or a substituted or unsubstituted alkyl group .
R2 및 R3가 벤질기 또는 벤조일기인 경우, 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환될 수 있다.When R 2 and R 3 are a benzyl group or a benzoyl group, they may be further substituted with at least one substituent selected from the group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group, and an amino group substituted or unsubstituted with an alkyl group.
예시적으로, R2 및 R3는 서로 독립적으로 수소, 메틸, 에틸, 프로필, 옥틸, 메톡시에틸, 히드록시프로필, 설포부틸, 바이닐, 알릴, 시클로헥실, 테트라하이드로피란일, 피롤릴, 포밀, 아세틸, 프로피오닐, 프로페노일, 벤질, 메톡시벤질, 벤조일, 2-피페리딘아세틸, 신나밀, 스티렌일 등일 수 있으나, 이에 한정하는 것은 아니다.Illustratively, R 2 and R 3 are independently from each other hydrogen, methyl, ethyl, propyl, octyl, methoxyethyl, hydroxypropyl, sulfobutyl, vinyl, allyl, cyclohexyl, tetrahydropyranyl, pyrrolyl, , Acetyl, propionyl, propenoyl, benzyl, methoxybenzyl, benzoyl, 2-piperidine acetyl, cinnamyl, styrene and the like, but is not limited thereto.
상기 화학식 1 및 화학식 2에서, n = 7, 그리고 R2 및 R3 = H, 그리고 m = 0, 그리고 X, Y 및 X = Na인 경우, 본 발명에 따르는 인산화-시클로덱스트린은 아래 화학식 5와 같이 표시된다.The phosphorylated cyclodextrin according to the present invention is represented by the following chemical formulas 5 and 6 when n = 7 and R 2 and R 3 = H and m = 0 and X, Y and X = Na in the above Chemical Formulas 1 and 2, As shown in FIG.
<화학식 5>≪ Formula 5 >
상기 화학식 1로 표시되는 화합물은 D-글루코스로 결합에 의해 고리화된 원통형의 시클로덱스트린 화합물(CDs)이며, D-글루코스의 중합도에 따라 알파-CD(n=6), 베타-CD(n=7) 및 감마-CD(n=8)라고 한다.The compounds represented by Formula 1 are cylindrical cyclodextrin compounds (CDs) cyclized by bonding with D-glucose, and alpha-CD (n = 6), beta-CD (n = 7) and gamma-CD (n = 8).
특히, CDs는 원통형의 외부에 친수성인 히드록시기가 과량 존재하기 때문에 물에 대한 용해도가 높은 반면 원통형 내부에는 친유성의 커다란 빈 공간을 가지고 있어 다른 물질과 포접을 형성할 수도 있으며, 산, 아민, 금속과 같은 이온뿐 아니라 지방족 및 방향족 탄화수소까지 포접할 수 있는 특성을 가지고 있다.In particular, CDs have a high solubility in water due to the presence of excessive hydrophilic hydroxyl groups on the outside of the cylinder, while they have a large vacancy space in the inside of the cylinder and may form capsules with other substances, But also to aliphatic and aromatic hydrocarbons.
이 CDs를 이루는 구성단위는 글루코스이기때문에 독성이 없고 인체에 매우 안전하여 식품, 의약품, 화장품, 화장실용품 등의 용도로 폭넓게 사용되고 있다.Since the constituent unit of these CDs is glucose, it is not toxic and is very safe for human body, and is widely used for foods, medicines, cosmetics, toiletries and the like.
본 발명에 따르는 인산화-시클로덱스트린은 시클로덱스트린 골격에 도입된 인산기에 의한 높은 계면 활성력 및 pH 완충 효과에 따른 금속 부식 억제에 의해 개선된 박리 성능 및 금속 부식방지 성능을 달성한다.The phosphorylated-cyclodextrin according to the present invention achieves improved detachment performance and metal corrosion prevention performance by inhibiting metal corrosion due to high surfactant activity and pH buffering effect by the phosphate group introduced into the cyclodextrin skeleton.
본 발명에서, CDs가 갖는 친유성 및 친수성의 성질에 의해 유성 또는 난용성 물질을 수계에서 유화 및 균질화하는 역할을 할 수 있다. 따라서 글리콜에테르류와 같은 독성의 유기용매를 사용하지 않고도 감광제(PAC)나 유기 염류와 같은 유성물질을 수계에 잘 용해 또는 유화시킬 수 있으므로 박리효과를 증대시킬 수 있다.In the present invention, oily or poorly soluble substances can be emulsified and homogenized in a water-based owing to the lipophilic and hydrophilic properties of CDs. Therefore, it is possible to dissolve or emulsify an oily substance such as a photosensitizer (PAC) or an organic salt into the water system without using a toxic organic solvent such as glycol ethers, thereby increasing the peeling effect.
또한, CDs는 분자 내에 알코올 및 에테르 작용기가 풍부하기 때문에 금속표면과 배위결합이 가능하다. 따라서 금속배선 표면에 결합된 CDs는 금속이 물 또는 산소와 접촉하는 것을 차단함으로써 결과적으로 금속표면을 코팅하는 효과를 갖게 되어 금속의 부식을 방지할 수 있게 된다. 뿐만 아니라, 금속을 부식시킬 수 있는 무기염기나 유기염기와 같은 강한 염기성 화합물이나 이온들을 CDs의 내부에 포접할 수 있어서 부식억제력을 향상시킬 수도 있다.CDs are also capable of coordinating with metal surfaces because of the abundance of alcohol and ether functionalities in the molecule. Therefore, the CDs bonded to the surface of the metal wiring can prevent the metal from coming into contact with water or oxygen, and consequently have the effect of coating the metal surface, thereby preventing corrosion of the metal. In addition, strongly basic compounds such as inorganic bases and organic bases that can corrode metal can be trapped inside the CDs, thereby improving the corrosion inhibiting ability.
상기 화학식 1로 표시되는 인산화-시클로덱스트린 화합물은 박리액 전체 조성물 대비 1~50 중량부, 바람직하게는 5~20중량부일 수 있다. 시클로덱스트린 화합물의 중량이 1중량부 미만이면 계면 활성력이 저하되어 유성물질들을 충분히 제거할 수 없고, 50 중량부를 초과하면 박리액의 점도가 높아져 박리효율이 낮아질 수 있다.The phosphorylated-cyclodextrin compound represented by Formula 1 may be used in an amount of 1 to 50 parts by weight, preferably 5 to 20 parts by weight, based on the whole composition of the exfoliant. If the weight of the cyclodextrin compound is less than 1 part by weight, the surfactant may not be sufficiently removed, and if it exceeds 50 parts by weight, the viscosity of the peeling liquid may increase and the peeling efficiency may be lowered.
이하 본 발명의 일 측면에 따르는 인산화-시클로덱스트린 화합물의 제조방법에 관한 메커니즘을 설명한다[참조문헌: Carbohydrate Polymers 98(2013) 896-904].Hereinafter, a mechanism for a method for producing a phosphorylated-cyclodextrin compound according to one aspect of the present invention is described (Carbohydrate Polymers 98 (2013) 896-904).
STMP(sodium trimetaphosphate)에 의한 당류 가교-결합(saccharide cross-linking)의 메커니즘은 α-D-글루코피라노사이드(α-D-glucopyranoside)에 관한 31P NMR 연구에 의해 이미 밝혀졌으며(Lack, Dulong, Picton, Cerf, & Condamine, 2007), 다당류에 관한 연구도 이루어져 있다((pullulan (Lack et al., 2007), xanthan(Bejenariu et al., 2009) 및 starch (Sang et al., 2007)).The mechanism of saccharide cross-linking by sodium trimetaphosphate (STMP) has been previously demonstrated by a 31 P NMR study on? -D-glucopyranoside (Lack, Dulong , 2007), and starch (Sang et al., 2007)), polysaccharides have also been studied (Picton, Cerf, & Condamine, 2007) .
아래 메커니즘은 주요 단계에 대한 요약이다: (a) NaOH에 의한 히드록시기의 알코올레이트(alcoholate)로의 전환, (b) NaOH에 의해 STMP의 고리가 개방되어 소디움 트리폴리포스페이트(sodium tripolyphosphate)가 되거나, 또는 생성된 알코올레이트(alcoholate)에 의해 STMP의 고리가 개방되어 그라프트된 트리폴리포스페이트(grafted tripolyphosphate, TPPg)가 생성되며, 이는 가교-결합 반응의 중간체임, (c) TPPg가 알코올레이트와 반응하여 포스페이트 디에스터(phosphate diester, Pc)를 생성하거나, 또는 NaOH와 반응하여 주생성물로 그라프트된 모노포스페이트(grafted monophosphate, Pg)와 부생성물로 무기 피로포스페이트(inorganic pyrophosphate, PPi)를 생성함.The mechanism below is a summary of the main steps: (a) the conversion of the hydroxyl group to alcoholate by NaOH, (b) the opening of the STMP ring by NaOH leads to sodium tripolyphosphate, or (C) TPPg is reacted with an alcoholate to form a phosphate bridge, thereby forming a grafted tripolyphosphate (TPPg) which is opened by the alcoholate of the STMP to form a grafted tripolyphosphate To produce a phosphate diester (Pc), or to react with NaOH to produce grafted monophosphate (Pg) as the main product and inorganic pyrophosphate (PPi) as a by-product.
다음으로, 본 발명의 박리액 조성물의 일성분인 염기성 화합물에 대하여 설명한다. 염기성 화합물은 변형된 포토레지스트 레진의 페놀성분 간 수소 결합을 약화시킴으로써 박리력을 높이는 역할을 한다. 이러한 역할을 하는 염기성 화합물은 유기 염기 또는 무기 염기일 수 있으며, 유기 염기와 무기염기를 혼합하여 사용할 수도 있다.Next, the basic compound which is one component of the release liquid composition of the present invention will be described. The basic compound serves to enhance the peeling force by weakening the hydrogen bonding between the phenol components of the modified photoresist resin. The basic compound having such a role may be an organic base or an inorganic base, and an organic base and an inorganic base may be mixed and used.
유기 염기성 화합물은 모노메틸아민, 디메틸아민, 트리에틸아민, 디이소프로필에틸아민, 모노에탄올아민, 모노이소프로판올, 디에탄올아민, 트리에탄올아민, 2-(2-아미노에톡시)에탄올, 2-아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 2-메틸아미노에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(3-아미노프로필)몰포린, 2-메틸피페라진, 1-메틸피페라진, 1-아미노-4-메틸피페라진, 1-벤질 피페라진, 1-페닐 피페라진, 테크라메틸구아니딘, 1,8-디아자비시클로운데크-7-엔, 및 1,5-디아자비시클로(4,3,0)논-5-엔으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The organic basic compound is selected from the group consisting of monomethylamine, dimethylamine, triethylamine, diisopropylethylamine, monoethanolamine, monoisopropanol, diethanolamine, triethanolamine, 2- (2-aminoethoxy) (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenyl (2-methylpiperazin-1-yl) One selected from the group consisting of piperazine, tetramethylguanidine, 1,8-diazabicycloundec-7-ene, and 1,5-diazabicyclo (4,3,0) May be a single compound or a mixture of two or more compounds, but is not limited thereto.
무기 염기성 화합물은 수산화암모늄, 수산화나트륨, 수산화칼륨, 인산 수소 이암모늄((NH4)2HPO4), 인산 이수소 암모늄((NH4)H2PO4), 인산 삼암모늄((NH4)3PO4), 인산 수소 이나트륨(Na2HPO4), 인산 이수소 나트륨(NaH2PO4), 인산 삼나트륨(Na3PO4), 인산 수소 이칼륨(K2HPO4), 인산 이수소칼륨(KH2PO4),및 인산 삼칼륨(K3PO4)으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.Inorganic basic compounds are ammonium hydroxide, sodium hydroxide, potassium hydroxide, phosphoric acid, ammonium ((NH 4) 2 HPO 4), ammonium dihydrogen phosphate ((NH 4) H 2 PO 4), tricalcium phosphate, ammonium ((NH 4) 3 PO 4 ), sodium dihydrogen phosphate (Na 2 HPO 4 ), sodium dihydrogen phosphate (NaH 2 PO 4 ), trisodium phosphate (Na 3 PO 4 ), potassium dihydrogen phosphate (K 2 HPO 4 ) Potassium hydroxide (KH 2 PO 4 ), and tripotassium phosphate (K 3 PO 4 ), or a mixture of two or more of them. However, the present invention is not limited thereto.
박리액 조성물 내 염기성 화합물의 함량은 전체 박리액 조성물 대비 1~30중량부, 바람직하게는 1~15중량부일 수 있다. 또한, 유기 염기성 화합물과 무기 염기성 화합물을 혼합 사용시 박리액 내의 유기 염기는 5~20중량부, 무기 염기는 1~5중량부인 것이 바람직하다. 염기성 화합물의 중량이 1중량부 미만이면 PAC-레진(resin) 간에 존재하는 결합이 충분히 끊어지지 않아 박리효과를 저하시킬 수 있으며, 30중량부를 초과하면 금속 배선을 부식시킬 수 있다.The content of the basic compound in the peeling liquid composition may be 1 to 30 parts by weight, preferably 1 to 15 parts by weight, based on the total peeling liquid composition. When the organic basic compound and the inorganic basic compound are mixed, it is preferable that the organic base in the peeling liquid is 5 to 20 parts by weight and the inorganic base is 1 to 5 parts by weight. If the weight of the basic compound is less than 1 part by weight, the bond existing between the PAC resin may not be sufficiently broken, and the peeling effect may be deteriorated. If the amount exceeds 30 parts by weight, the metal wiring may be corroded.
본 발명의 일 실시예에 따른 박리액 조성물은 물을 포함한다. 박리액 조성물에 함유된 물은 화합물 1과 염기성 화합물 등의 수용성 화합물을 녹이기 위한 것으로, 증류수, 탈이온수 또는 초순수 등일 수 있으며, 초순수인 것이 바람직하다.The release liquid composition according to an embodiment of the present invention includes water. Water contained in the release liquid composition is for dissolving the compound 1 and a water-soluble compound such as a basic compound, and may be distilled water, deionized water, ultrapure water, or the like, and is preferably ultra pure water.
이러한 물은 박리액 조성물 대비 10~80중량부, 바람직하게는 30~70중량부일 수 있다. 상기 물의 함량이 10중량부 미만이면 염기성분의 농도가 높아지게 되어 금속 배선의 부식성을 증가시킬 수 있으며, 독성 유기용매의 사용량이 증가할 수 있다. 또한, 박리액 내의 물의 함량이 80중량부를 초과하면 염기성분의 농도가 낮아지게 되어 포토레지스트 박리성능이 저하될 수 있다.Such water may be 10 to 80 parts by weight, preferably 30 to 70 parts by weight, based on the release liquid composition. If the content of the water is less than 10 parts by weight, the concentration of the base component may be increased, thereby increasing the corrosiveness of the metal wiring, and the amount of the toxic organic solvent may be increased. In addition, if the content of water in the peeling liquid exceeds 80 parts by weight, the concentration of the base component may be lowered, and the photoresist peeling performance may be deteriorated.
또한, 본 발명의 일시시예에 따른 박리액 조성물은 극성용매를 더 포함할 수 있다. 이러한 극성용매는 결합이 끊어진 감광제(PAC, photoactive compound)와 Novolak Resin 등의 유성 물질에 대한 용해도를 높이는 역할을 한다. 극성용매는 전체 박리액 조성물 대비 1~60중량부, 바람직하게는 20~40중량부일 수 있다. 극성용매의 함량이 1중량부 미만이면 감광제와 노볼락 레진 등에 대한 용해도가 낮아져서 박리 효과가 저하될 수 있고, 60중량부를 초과하면 환경 및 인체에 대한 유해성을 증가시키고 폐수처리비용 등 경제적 손실을 유발시킬 수 있다.In addition, the peeling liquid composition according to the embodiment of the present invention may further include a polar solvent. These polar solvents increase solubility in oily materials such as PAC (photoactive compound) and Novolak Resin. The polar solvent may be 1 to 60 parts by weight, preferably 20 to 40 parts by weight, based on the total exfoliant composition. If the content of the polar solvent is less than 1 part by weight, the solubility of the photosensitive agent and the novolac resin may be lowered and the peeling effect may be lowered. If the amount exceeds 60 parts by weight, the harmfulness to the environment and human body may be increased, .
이러한 극성용매는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N,N-디메틸프로피온아미드, N-메틸 피롤리돈, N-에틸 피롤리돈, r-부티로락톤, 테트라히드로푸르퓨릴알콜, 디메틸설폭사이드, 설포란, 에틸렌글리콜모노메틸에테르, 에릴렌글리콜모노에틸에테르, 에틸렌글리골모노이소프로필 에테르, 에틸렌글리콜모노부틸 에테르, 트리에틸렌글리콜모노에틸 에테르, 트리에틸렌글리콜모노이소프로필 에테르, 트리에틸렌글리콜모노부틸 에테르, 폴리에틸렌글리콜모노메틸 에테르, 폴리에틸렌글리콜모노이소프로필 에테르, 폴리에틸렌글리콜모노부틸 에테르, 프로필렌글리콜모노메틸 에테르, 프로필렌글리콜모노이소프로필 에테르, 프로필렌글리콜모노부틸 에테르, 및 프로필렌글리콜모노메틸 에테르 아세테이트 등으로 이루어진 군으로부터 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.Such a polar solvent may be selected from the group consisting of formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Diethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, Ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monoisopropyl ether, polyethylene glycol monobutyl ether, propylene glycol mono Methyl ether, propylene glycol monoisopropyl ether, propylene glycol monobutyl ether, and propylene glycol Be a call monomethyl ether alone or a compound or mixture of two or more selected from the group consisting of acetate, and the like, but is not limited to.
또한, 본 발명의 일실시예에 따른 포토레지스트 박리액 조성물은 계면활성제, 바람직하게는 양이온계면활성제 성분을 더 포함할 수 있다. 계면활성제는 계면이 가지고 있는 고유의 성질을 변화시키고 장력을 저하시켜 용도에 따라 유화 또는 세정 등의 역할을 하는 성분들을 말하는 것으로, 계면 간의 침투력을 증가시켜 균일한 세정이 이루어지도록 함으로써 포토레지스트의 박리력을 증가시키는 역할을 한다. 따라서 계면활성제는 음이온 계면활성제, 양이온 계면활성제, 비이온 계면활성제, 양쪽성 계면활성제를 적용할 수 있지만, 양이온 계면활성제가 바람직하다.In addition, the photoresist stripper solution composition according to an embodiment of the present invention may further comprise a surfactant, preferably a cationic surfactant component. Surfactant refers to components that change the inherent properties of the interface and lower the tensile force and play a role of emulsifying or cleaning depending on the application. By increasing the penetration power between the interfaces, uniform cleaning can be performed, It increases the power. Therefore, anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants can be applied as surfactants, but cationic surfactants are preferred.
박리액 조성물 내의 계면활성제의 함량은 전체 조성물 대비 0.01~30중량부, 바람직하게는 5~30중량부일 수 있다. 계면활성제의 함량이 0.01중량부 미만이면 박리가 균일하지 않을 수 있고, 30중량부를 초과하면 거품이 심하게 발생할 뿐만 아니라 환경과 인체에 대한 유해성을 증가시킬 수 있다.The content of the surfactant in the release liquid composition may be 0.01 to 30 parts by weight, preferably 5 to 30 parts by weight, based on the whole composition. If the content of the surfactant is less than 0.01 part by weight, the peeling may not be uniform. If the amount is more than 30 parts by weight, bubbles may be generated severely, and the toxicity to the environment and the human body may be increased.
상기 양이온계면활성제는 수산화테트라메틸암모늄염, 수산화테트라에틸암모늄염, 수산화테트라프로필암모늄염, 및 수산화테트라부틸암모늄염으로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The cationic surfactant may be a single compound or a mixture of two or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, but is not limited thereto.
또한, 본 발명의 일 실시예에 따른 포토레지스트 박리액 조성물은 부식방지제를 더 포함할 수 있다. 부식방지제는 금속 자체만으로 내식성이 부족한 경우 소량 첨가하여 부식을 억제하는 화학물질로, 금속 표면에 흡착하여 부식성 물질의 침입을 방지하기 위한 흡착형 부식억제제가 바람직하며, 질소내의 비공유 전자쌍이 존재하여 금속 표면에서 화학흡착을 용이하게 할 수 있는 아졸계의 부식방지제가 더욱 바람직하다.In addition, the photoresist stripper composition according to an embodiment of the present invention may further include a corrosion inhibitor. The corrosion inhibitor is a chemical substance which suppresses corrosion by adding a small amount when the corrosion resistance is insufficient only by the metal itself. It is preferable that the corrosion inhibitor is adsorbed on the metal surface to prevent the penetration of the corrosive substance. More preferred are azole-based corrosion inhibitors which can facilitate chemical adsorption on the surface.
이러한 부식방지제의 함량은 박리액 전체 조성물 대비 0.01~10중량부인 것이 바람직하다. 부식방지제의 함량이 0.01중량부 미만이면 부식방지력이 저하될 수 있고, 10중량부를 초과하면 심한 거품이 생성될 뿐만 아니라 박리력 또한 저하될 수 있고 비용 상승 및 환겨오염 등의 문제가 발생할 수 있다.The content of such a corrosion inhibitor is preferably 0.01 to 10 parts by weight relative to the total composition of the peeling liquid. When the content of the corrosion inhibitor is less than 0.01 part by weight, corrosion resistance may be deteriorated. When the amount of the corrosion inhibitor exceeds 10 parts by weight, not only bubbles are generated but also peeling force may be lowered. .
상기 부식방지제는 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 벤조트리아졸-5-카르복실산, 니트로벤조트리아졸, 2-(2H-벤조트리아졸-2-일)-4,5-디-t-부틸페놀, 이미다졸, 2-머캅토벤즈이미다졸, 2,5-디머캅토-1,3,4-티아디졸, 2-머캅토벤조티아졸 및 2-티오우라실로 이루어진 군에서 선택되는 1종 단독화합물 또는 2종 이상의 혼합물일 수 있으나, 이에 한정하는 것은 아니다.The corrosion inhibitor may be selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, But are not limited to, benzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole, benzotriazole- Sol, 2- (2H-benzotriazol-2-yl) -4,5-di-t-butylphenol, imidazole, 2- mercaptobenzimidazole, 2,5-dimercapto-1,3,4 Thiadiazole, 2-mercaptobenzothiazole, and 2-thiouracil, or a mixture of two or more thereof, but the present invention is not limited thereto.
위에서 상술한 바와 같이 본 발명에 따른 포토레지스트 박리액 조성물을 이용하면, 인체와 환경에 무해하면서도, 높은 박리효율과 금속 배선의 손상을 최소화하여 포토레지스트를 박리시킬 수 있을 것이다.As described above, the use of the photoresist stripper composition according to the present invention minimizes the detachment efficiency and the damage of the metal wiring while harmless to the human body and the environment, thereby peeling the photoresist.
이하, 본 발명의 일 실시예에 따른 포토레지스트 박리액 조성물에 대한 실시예를 설명한다. 하기 실시예는 본 발명을 설명하기 위한 예시에 불과한 것일 뿐이며, 본 발명의 권리범위가 이러한 실시예로 한정되는 것은 아니다.Hereinafter, embodiments of the photoresist stripper composition according to an embodiment of the present invention will be described. The following examples are merely illustrative of the present invention, and the scope of the present invention is not limited to these examples.
<< 실시예Example 1> 박리액 조성물의 제조 및 박리 성능 평가 1 > Preparation of peeling liquid composition and evaluation of peeling performance
(1) 시편의 제조(1) Preparation of specimen
Al 금속배선이 60nm 두께로 패터닝된 유리기판 위에 포지티브형 포토레지스트를 1um의 두께가 되도록 스핀코터(Spin Coater)로 코팅한 후, 약 150℃에서 약 10분간 베이킹(Baking)하여 변성레지스트 박막이 코팅된 시편을 제조하였다.A positive type photoresist was coated on a glass substrate patterned with Al metal wiring with a thickness of 60 nm with a spin coater so as to have a thickness of 1 mu m and then baked at about 150 DEG C for about 10 minutes to form a modified resist thin film .
(2) 인산화-시클로덱스트린의 제조(2) Preparation of phosphorylated-cyclodextrin
수산화나트륨 24.7g(0.617몰)과 초순수 물 400g에 β-시클로덱스트린 200g(0.17몰)을 서서히 투입하여 용해시킨 후 상온에서 3시30분간 교반하였다. 반응물을 50℃로 승온 후 소디움 트리메타포스페이트 189g(0.617몰)을 서서히 투입 한 후 50℃에서 1시간 30분간 교반하였다. 반응물을 상온으로 냉각한 후 아세톤 2L를 투입하여 결정화하였다. 결정화된 생성물을 여과하여 인산화된 시클로덱스트린 형태인 β-CD-P3를 370g 수득하였다. 인산화-시클로덱스트린 유도체는 모핵이 되는 시클로덱스트린(α-CD, β-CD, r-CD), STMP 및 염기의 당량 비율에 따라 다양한 형태로 제조될 수 있다. 제조된 β-CD-P3에 대한 IR 자료를 도 1에 도시하였다.200 g (0.17 mol) of? -Cyclodextrin was slowly added to and dissolved in 24.7 g (0.617 mol) of sodium hydroxide and 400 g of ultrapure water, followed by stirring at room temperature for 3 hours and 30 minutes. After the temperature of the reaction was raised to 50 캜, 189 g (0.617 mol) of sodium trimetaphosphate was slowly added thereto, followed by stirring at 50 캜 for 1 hour and 30 minutes. After the reaction was cooled to room temperature, 2 L of acetone was added to crystallize. The crystallized product was filtered to obtain 370 g of? -CD-P3 in the form of phosphorylated cyclodextrin. Phosphorylated-cyclodextrin derivatives can be prepared in various forms depending on the ratio of equivalents of cyclodextrins (? -CD,? -CD, r-CD), STMP and base, which become the parent nucleus. IR data for the produced? -CD-P3 are shown in FIG.
(3) 박리액의 제조(3) Preparation of peeling liquid
상기와 같이 제조된 인산화-시클로덱스트린스, 유기염기, 및 각 부성분을 하기 표 1에 제시된 함량 비율(중량%)에 따라 초순수 물에 용해시킨 후 용액이 균일하게 되도록 잘 혼합하여 제조하였다. The phosphorylated-cyclodextrins prepared as described above, the organic bases, and the respective subcomponents were dissolved in ultrapure water according to the content ratios (% by weight) shown in the following Table 1, and the solutions were uniformly mixed so as to be uniform.
(4) 박리성능 평가(4) Peeling performance evaluation
상기 (3)에 따라 제조된 박리액을 50℃로 가열하였다. 상기 (1)에 따라 제조된 시편을 상기 박리액에 1분 동안 침적한 후, 초순수로 세정하고 질소로 건조하였다. 건조된 시편은 육안 및 현미경으로 포토레지스트 잔사의 잔류 정도를 측정하여 박리성을 평가하였으며, 그 결과는 박리성 측정기준에 따라 하기 표 1에 나타내었다. The stripping solution prepared according to (3) above was heated to 50 캜. The specimen prepared in accordance with the above (1) was immersed in the exfoliation solution for 1 minute, followed by washing with ultrapure water and drying with nitrogen. The dried specimens were evaluated for peelability by observing the residual degree of photoresist residue with a naked eye and a microscope, and the results are shown in Table 1 according to the peelability measurement standard.
[박리성 측정기준][Measurement criteria for peelability]
◎: 포토레지스트 잔사가 완전 제거됨◎: Photoresist residue is completely removed
○: 포토레지스트 잔사가 흔적량 남아 있음○: Remaining photoresist residue remains
△: 포토레지스트 잔사가 1/2이상 남아 있음?: More than 1/2 of the photoresist residue remained
X: 포토레지스트 잔사가 제거 안됨X: Photoresist residue not removed
(5) 내부식성 평가(5) Evaluation of corrosion resistance
상기 (3)에 따라 제조된 박리액을 50℃로 가열하고, 상기 (4)에 의해 완벽히 박리된 시편을 상기 박리액에 10분간 침적한 후, 초순수로 세정하고 질소로 건조하였다. 건조된 시편은 현미경과 SEM 장비를 사용하여 금속박막의 표면 변화와 두께 변화를 측정하여 부식성을 평가하였으며, 그 결과는 금속 부식성 측정기준에 따라 하기 표 1에 나타내었다. The exfoliating liquid prepared in accordance with the above (3) was heated to 50 캜, and the specimen completely peeled off in the above (4) was immersed in the exfoliating liquid for 10 minutes, followed by washing with ultrapure water and drying with nitrogen. The dried specimens were evaluated for corrosion by measuring surface changes and thickness changes of the metal thin films using a microscope and SEM equipment. The results are shown in Table 1 according to the metal corrosivity measurement standard.
[금속 내부식성 측정기준][Criteria for measurement of corrosion resistance in metal]
◎: 금속 박막의 두께 및 표면 변화가 없음◎: No change in thickness and surface of metal thin film
○: 금속 박막이 일부 용해됨○: The metal thin film was partially dissolved
△: 금속 박막이 1/2 이상 용해됨 ?: The metal thin film was dissolved in 1/2 or more
X: 금속 박막이 완전히 용해 됨X: The metal thin film is completely dissolved
<< 실시예Example 2 ~ 14, 2 to 14, 비교예Comparative Example 1 ~ 6> 박리액 조성물의 제조 및 박리성능 평가 1 to 6> Preparation of peeling liquid composition and evaluation of peeling performance
하기 표 1에 기재된 조성비에 따라 박리액을 제조하여 사용한 점을 제외하고는 상기 실시예 1과 동일한 방법으로 포토레지스트 박리액 조성물의 박리성능을 평가하였다.The peeling performance of the photoresist stripper composition was evaluated in the same manner as in Example 1, except that a stripper was prepared and used according to the composition ratios shown in Table 1 below.
상기 실시예 1 내지 14 및 비교예 1 내지 6에 따른 박리 성능 및 내부식성을 평가한 결과는 하기 표 1과 같다.The peeling performance and the corrosion resistance according to Examples 1 to 14 and Comparative Examples 1 to 6 were evaluated and the results are shown in Table 1 below.
[표 1][Table 1]
MEA: 모노에탄올아민, DMPA:N,N-디메틸프로피온아마이드MEA: monoethanolamine, DMPA: N, N-dimethylpropionamide
THFA: 테트라히드로푸르퓨릴알콜, BTZ: 벤조트리아졸THFA: tetrahydrofurfuryl alcohol, BTZ: benzotriazole
p-CD: (2-히드록시프로필)-베타-시클로덱스트린p-CD: (2-hydroxypropyl) -beta-cyclodextrin
α-CD-P6: 알파-시클로덱스트린 6가 인산화 소디움염alpha -CD-P6: Alpha-cyclodextrin 6 phosphorylated sodium salt
β-CD-P1: 베타-시클로덱스트린 1가 인산화 소디움염β-CD-P1: Beta-cyclodextrin monophosphate sodium salt
β-CD-P3: 베타-시클로덱스트린 3가 인산화 소디움염β-CD-P3: Beta-cyclodextrin 3 phosphorylated sodium salt
β-CD-P7: 베타-시클로덱스트린 7가 인산화 소디움염β-CD-P7: Beta-cyclodextrin 7 is a phosphate sodium salt
r-CD-P8: 감마-시클로덱스트린 8가 인산화 소디움염r-CD-P8: Gamma-cyclodextrin 8 is a sodium phosphate salt
상기 표 1을 살펴보면, 비교예 1 내지 3 과 같이 물 이외에 염기성 화합물인 모노에탄올아민(MEA)만을 함유하거나 (비교예 1), 염기성 화합물인 모노에탄올아민(MEA)과 인산기가 포함되지 않은 시클로덱스트린(p-CD)만을 함유할 경우 (비교예 2) 포토레지스트 잔사 박리 성능이 낮으며, 염기성 화합물인 모노에탄올아민(MEA)과 인산기가 포함되지 않은 시클로덱스트린(p-CD) 외 인산칼륨과 같은 무기염기성 화합물을 소량 혼합 사용 시 (비교예 3) 박리 성능은 향상되나 금속 부식이 일부 존재함을 알 수 있다.The results are shown in Table 1. As shown in Table 1, in Comparative Examples 1 to 3, only basic compounds other than water, ie, monoethanolamine (MEA) were contained (Comparative Example 1), and monoethanolamine (MEA) as a basic compound and cyclodextrin (p-CD) alone (Comparative Example 2), the photoresist residue peeling performance is low, and the basic compound monoethanolamine (MEA) and the cyclodextrin (p-CD) When the inorganic basic compound is mixed in a small amount (Comparative Example 3), the peeling performance is improved, but metal corrosion is partially observed.
반면, 비교예 2와 본 발명의 실시예 2 내지 6을 비교해 보면, 인산화-시클로덱스트린을 박리액 조성물의 일성분으로 사용할 경우 낮은 농도에서도 박리성능이 향상되는 것을 확인할 수 있으며, 비교예 3과 본 발명의 실시예 2 내지 6을 비교할 경우에 무기염기성 화합물을 첨가하지 않은 상태에서 동등한 박리 성능을 보이며, 따라서 금속의 내부식성이 개선되는 것을 확인할 수 있다. On the other hand, when comparing Comparative Example 2 with Examples 2 to 6 of the present invention, it was confirmed that the use of phosphorylated-cyclodextrin as one component of the peeling liquid composition improved the peeling performance even at a low concentration, Comparing Examples 2 to 6 of the present invention shows that the same peelability is exhibited in the state that the inorganic basic compound is not added, and thus the corrosion resistance of the metal is improved.
이러한 효과는 시클로덱스트린 골격에 도입된 인산기에 의한 높은 계면 활성력 및 pH 완충 효과에 따른 금속부식 억제에 의한 것으로 해석할 수 있다.This effect can be interpreted as a result of the suppression of metal corrosion due to the high surfactant activity and the pH buffering effect of the phosphate group introduced into the cyclodextrin skeleton.
실시예 1 내지 6을 비교해 보면, 시클로덱스트린의 골격에 따라 (α-CD:6, β-CD:7, r-CD:8) 치환될 수 있는 인산기는 각각 1 내지 n 까지 가능하며 1개 이상 치환 시에도 박리성능 개선효과를 볼 수 있으며 바람직하게는 3개 이상 치환된 형태에서 최적의 박리 효율을 얻을 수 있다.Comparing Examples 1 to 6, the phosphate groups that can be substituted (? -CD: 6,? -CD: 7, r-CD: 8) according to the skeleton of cyclodextrin are each 1 to n, It is possible to exhibit the peeling performance improving effect even when it is substituted, and it is possible to obtain the optimum peeling efficiency preferably in the case of three or more substituted forms.
실시예 2와 실시예 7을 비교해 보면, 극성용매(DMPA, THFA등)를 일부 첨가할 경우 박리시간이 짧아짐을 알 수 있다.Comparing Example 2 and Example 7, it can be seen that the peeling time is shortened when a polar solvent (DMPA, THFA, etc.) is partially added.
한편, 실시예 8과 실시예 9를 비교해 보면, 박리온도를 50℃에서 45℃로 낮출 경우 포토레지스트 박리가 완벽하게 이루어지지 않으며 실시예 9 내지 14와 같이 모노에탈올아민을 20중량%까지 올리고 극성용매를 비율을 높여도 레지스트 잔사가 일부 남게 되는 것을 알 수 있다.On the other hand, when Example 8 and Example 9 were compared, it was found that when the peeling temperature was lowered from 50 캜 to 45 캜, the peeling of the photoresist was not completely performed and the monoethanolamine was increased up to 20% It can be seen that a part of the resist residue remains even if the ratio of the polar solvent is increased.
반면, 실시예 15와 같이 수산화나트륨과 같은 무기염기를 5중량% 첨가하게 되면 낮은 온도에서도 박리가 이루어지나 부식방지제 사용에도 불구하고 금속 표면의 부식이 일부 발생한다. On the other hand, if 5 wt% of an inorganic base such as sodium hydroxide is added as in Example 15, peeling occurs even at a low temperature, but corrosion of the metal surface occurs partially even though the corrosion inhibitor is used.
이를 개선하기 위하여, 실시예 16과 같이 극성용매를 일부 첨가하여 무기염기의 사용량을 최소화할 경우 45℃, 50sec 조건에서 박리성능 및 부식성이 모두 우수하게 유지된다는 것을 알 수 있다.In order to improve this, it can be seen that when the amount of the inorganic base is minimized by adding a polar solvent partially as in the case of Example 16, the peeling performance and the corrosion resistance are both excellent at 45 ° C. and 50 sec.
상기 표 1로부터 본 발명의 실시예와 같이 인산화-시클로덱스트린을 박리액의 일성분으로 사용시 포토레지스트의 박리성능 및 금속배선에 대한 내부식성 향상과 함께 물을 주성분으로 하는 수계 박리액 제조가 가능하므로, 환경 및 인체에 유해한 유기성분 및 부식방지제의 사용을 최소화할 수 있다. As shown in Table 1, when the phosphorylated-cyclodextrin is used as one component of the peeling liquid, it is possible to improve the peeling performance of the photoresist and the corrosion resistance against the metal wiring, and manufacture the aqueous stripping solution containing water as the main component , The use of organic compounds and corrosion inhibitors which are harmful to the environment and human body can be minimized.
이상의 설명은 본 발명을 예시적으로 설명한 것에 불과한 것으로, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않은 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서, 본 발명에 개시된 실시예들은 본 발명의 기술사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등하거나 균등한 범위 내에 있는 모든 기술사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the claims below, and all technical ideas within the scope of equivalents or equivalents thereof should be construed as being included in the scope of the present invention.
Claims (11)
<화학식 1>
상기 화학식 1에서, n은 6 내지 8의 정수이며,
R2 및 R3는 서로 독립적으로 수소, 치환 또는 비치환된 알킬기, 술폰산기, 아실기, 치환 또는 비치환된 벤질기, 및 치환 또는 비치환된 벤조일기로 이루어진 군에서 선택되며,
R1은 하기 화학식 2로 표시되며,
<화학식 2>
상기 화학식 2에서,
m은 0 내지 2의 정수이며, X, Y, 및 Z는 서로 독립적으로 -OH 또는 -OM이고, 여기서 M은 Li, Na, 또는 K이며,
m이 2인 경우, 각각의 Z는 서로 동일하거나 상이할 수 있다.A photoresist stripper composition comprising a compound represented by the following general formula (1) and a basic compound:
≪ Formula 1 >
In Formula 1, n is an integer of 6 to 8,
R 2 and R 3 are independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group, a sulfonic acid group, an acyl group, a substituted or unsubstituted benzyl group, and a substituted or unsubstituted benzoyl group,
R 1 is represented by the following formula (2)
(2)
In Formula 2,
m is an integer from 0 to 2, X, Y, and Z are independently from each other -OH or -OM, wherein M is Li, Na, or K,
When m is 2, each Z may be the same or different from each other.
상기 알킬기는 히드록시기, 알콕시기, 술폰산기, 인산기, 및 알킬기로 치환 또는 비치환된 아미노기로 이루어진 군에서 선택된 하나 이상의 치환기로 더 치환되는 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the alkyl group is further substituted with at least one substituent selected from the group consisting of a hydroxyl group, an alkoxy group, a sulfonic acid group, a phosphoric acid group, and an amino group substituted or unsubstituted with an alkyl group.
극성용매를 더 포함하는 포토레지스트 박리액 조성물.The method according to claim 1,
A photoresist stripper liquid composition further comprising a polar solvent.
계면활성제 및 부식방지제 중 적어도 하나를 더 포함하는 포토레지스트 박리액 조성물.The method according to claim 1,
A surfactant, and a corrosion inhibitor.
상기 염기성 화합물은 유기 염기성 화합물이거나 유기 염기성 화합물과 무기염기성 화합물이 혼합된 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the basic compound is an organic basic compound or a mixture of an organic basic compound and an inorganic basic compound.
상기 극성용매는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N,N-디메틸프로피온아미드, N-메틸 피롤리돈, N-에틸 피롤리돈, r-부티로락톤, 테트라히드로푸르퓨릴알콜, 디메틸설폭사이드, 설포란, 에틸렌글리콜모노메틸에테르, 에릴렌글리콜모노에틸에테르, 에틸렌글리골모노이소프로필 에테르, 에틸렌글리콜모노부틸 에테르, 트리에틸렌글리콜모노에틸 에테르, 트리에틸렌글리콜모노이소프로필 에테르, 트리에틸렌글리콜모노부틸 에테르, 폴리에틸렌글리콜모노메틸 에테르, 폴리에틸렌글리콜모노이소프로필 에테르, 폴리에틸렌글리콜모노부틸 에테르, 프로필렌글리콜모노메틸 에테르, 프로필렌글리콜모노이소프로필 에테르, 프로필렌글리콜모노부틸 에테르, 및 프로필렌글리콜모노메틸 에테르 아세테이트로 이루어진 군에서 하나 이상 선택되며,
상기 염기성 화합물은 모노메틸아민, 디메틸아민, 트리에틸아민, 디이소프로필에틸아민, 모노에탄올아민, 모노이소프로판올, 디에탄올아민, 트리에탄올아민, 2-(2-아미노에톡시)에탄올, 2-아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 2-메틸아미노에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(3-아미노프로필)몰포린, 2-메틸피페라진, 1-메틸피페라진, 1-아미노-4-메틸피페라진, 1-벤질 피페라진, 1-페닐 피페라진, 테크라메틸구아니딘, 1,8-디아자비시클로운데크-7-엔, 및 1,5-디아자비시클로(4,3,0)논-5-엔으로 이루어진 유기 염기성 화합물 군에서 하나 이상 선택되거나; 수산화암모늄, 수산화나트륨, 수산화칼륨, 인산 수소 이암모늄((NH4)2HPO4), 인산 이수소 암모늄((NH4)H2PO4), 인산 삼암모늄((NH4)3PO4), 인산 수소 이나트륨(Na2HPO4), 인산 이수소 나트륨(NaH2PO4), 인산 삼나트륨(Na3PO4), 인산 수소 이칼륨(K2HPO4), 인산 이수소칼륨(KH2PO4),및 인산 삼칼륨(K3PO4)으로 이루어진 군에서 무기 염기성 화합물 군에서 하나 이상 선택되거나; 상기 유기 염기성 화합물 군에서 선택된 적어도 하나와 상기 무기 염기성 화합물 군에서 선택된 적어도 하나가 혼합된 혼합물인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method of claim 3,
The polar solvent may be selected from the group consisting of formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, Diethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether, Ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monoisopropyl ether, polyethylene glycol monobutyl ether, propylene glycol mono Methyl ether, propylene glycol monoisopropyl ether, propylene glycol monobutyl ether, and propylene glycol Monomethyl ether, and select at least one from the group consisting of acetate,
The basic compound may be selected from the group consisting of monomethylamine, dimethylamine, triethylamine, diisopropylethylamine, monoethanolamine, monoisopropanol, diethanolamine, triethanolamine, 2- (2-aminoethoxy) (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenyl (2-methylpiperazin-1-yl) One in the group of organic basic compounds consisting of piperazine, tetramethylguanidine, 1,8-diazabicycloundec-7-ene and 1,5-diazabicyclo (4,3,0) Or more; Ammonium hydroxide, ammonium hydroxide, sodium hydroxide, potassium hydrogen phosphate ((NH 4) 2 HPO 4 ), ammonium dihydrogen phosphate, ammonium ((NH 4) H 2 PO 4), tricalcium phosphate ((NH 4) 3 PO 4 ) (Na 2 HPO 4 ), sodium dihydrogen phosphate (NaH 2 PO 4 ), trisodium phosphate (Na 3 PO 4 ), potassium dihydrogen phosphate (K 2 HPO 4 ), potassium dihydrogen phosphate 2 PO 4 ), and tripotassium phosphate (K 3 PO 4 ), or one or more selected from the group of inorganic basic compounds; Wherein the mixture is a mixture of at least one selected from the organic basic compound group and at least one selected from the inorganic basic compound group.
상기 계면활성제는 수산화테트라메틸암모늄염, 수산화테트라에틸암모늄염, 수산화테트라프로필암모늄염, 및 수산화테트라부틸암모늄염으로 이루어진 군에서 하나 이상 선택되며,
상기 부식방지제는 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 벤조트리아졸-5-카르복실산, 니트로벤조트리아졸, 2-(2H-벤조트리아졸-2-일)-4,5-디-t-부틸페놀, 이미다졸, 2-머캅토벤즈이미다졸, 2,5-디머캅토-1,3,4-티아디졸, 2-머캅토벤조티아졸 및 2-티오우라실로 이루어진 군에서 하나 이상 선택되는 것을 특징으로 하는 포토레지스트 박리액 조성물.5. The method of claim 4,
The surfactant is at least one selected from the group consisting of tetramethylammonium hydroxide salt, tetraethylammonium hydroxide salt, tetrapropylammonium hydroxide salt, and tetrabutylammonium hydroxide salt,
The corrosion inhibitor may be selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, But are not limited to, benzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole, benzotriazole- Sol, 2- (2H-benzotriazol-2-yl) -4,5-di-t-butylphenol, imidazole, 2- mercaptobenzimidazole, 2,5-dimercapto-1,3,4 -Thiadiazole, 2-mercaptobenzothiazole, and 2-thiouracil. 2. A photoresist stripper composition according to claim 1,
전체 조성물 100 중량부 대비 상기 화학식 1로 표시되는 화합물은 1~50중량부이고, 상기 염기성 화합물은 1~30 중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method according to claim 1,
Wherein the amount of the compound represented by Formula 1 is 1 to 50 parts by weight and the amount of the basic compound is 1 to 30 parts by weight based on 100 parts by weight of the total composition.
전체 조성물 100 중량부 대비 상기 극성용매는 1~60중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.The method of claim 3,
Wherein the polar solvent is 1 to 60 parts by weight based on 100 parts by weight of the total composition.
전체 조성물 100 중량부 대비 상기 계면활성제는 0.01~30중량부이고, 상기 부식방지제는 0.01~10중량부인 것을 특징으로 하는 포토레지스트 박리액 조성물.5. The method of claim 4,
Wherein the surfactant is 0.01 to 30 parts by weight based on 100 parts by weight of the total composition, and the corrosion inhibitor is 0.01 to 10 parts by weight.
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