KR20170119273A - cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing and method for manufacturing semiconductor device including the same - Google Patents

Abstract

The present invention discloses a cleaning apparatus, a chemical mechanical polishing system comprising the same, a cleaning method after chemical mechanical polishing, and a method of manufacturing a semiconductor device including the same. The apparatus includes a first cleaning unit including a first double nozzle and a first cleaning unit for providing a substrate with a first spray containing a first solution and a first solution for dissolving the first chemical solution, And a second cleaning part including a second double nozzle for dissolving the second chemical solution and providing a second spray on the substrate containing the same second solution as the first solution.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus, a chemical mechanical polishing system including the same, a cleaning method after chemical mechanical polishing, and a manufacturing method of a semiconductor device including the cleaning apparatus. including the same}

The present invention relates to a substrate processing system and a substrate processing method thereof, and more particularly, to a cleaning apparatus for removing particles on a substrate, a chemical mechanical polishing system including the same, a cleaning method after chemical mechanical polishing, ≪ / RTI >

Semiconductor devices can be fabricated through a number of unit processes. The unit processes may include a thin film deposition process, a chemical mechanical polishing process, a photolithography process, an etching process, an ion implantation process, and a cleaning process. The cleaning process is a unit process for removing particles on the substrate. The chemical mechanical polishing process can cause particles on the substrate. Therefore, the cleaning process may have to be performed essentially after the chemical mechanical polishing process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a cleaning device capable of improving cleaning efficiency and a cleaning method after chemical mechanical polishing.

Another object of the present invention is to provide a cleaning device capable of reducing brush contamination, reverse contamination of the substrate due to brush contamination, and cleaning method after chemical mechanical polishing.

The present invention discloses a cleaning apparatus. The apparatus includes a first cleaning unit including a first double nozzle for providing a substrate with a first spray containing a first chemical solution and a first solution for dissolving the first chemical solution; And a second double nozzle for dissolving the second chemical solution and providing a second spray on the substrate containing the same second solution as the first solution, And a cleaning section.

A chemical mechanical polishing system according to an embodiment of the present invention includes: a substrate carrying section for carrying a substrate; A polishing apparatus comprising a polishing pad for polishing the substrate; And a cleaning apparatus for cleaning the substrate polished in the polishing apparatus to remove particles generated from the polishing apparatus. Here, the cleaning apparatus may include: a first cleaning unit including: a first cleaning unit including a first cleaning liquid and a first double nozzle for providing a first spray containing a first solution for dissolving the first cleaning liquid to the substrate; And a second double nozzle for dissolving the second chemical solution and providing a second spray on the substrate containing the same second solution as the first solution, And a cleaning section.

A cleaning method according to an example of the present invention includes: providing a first spray containing a first chemical solution and a first solution for dissolving the first chemical solution on a substrate; Providing a brush on the substrate, and providing a second chemical solution different from the first chemical solution; And providing a third chemical solution on the substrate identical to the second chemical solution and a second spray containing a second solution identical to the first solution for dissolving the third chemical solution.

A method of manufacturing a semiconductor device according to an embodiment of the present invention includes: preparing a substrate; Polishing the substrate; And removing the particles on the polished substrate to clean the substrate. Here, the step of cleaning the substrate may include: providing a first spray containing a first chemical solution and a first solution for dissolving the first chemical solution on the substrate; Providing a brush on the substrate, and providing a second chemical solution different from the first chemical solution; And providing a third chemical solution, which is the same as the second chemical solution, on the substrate, and a second spray containing a second solution which is the same as the first solution for dissolving the third chemical solution.

A cleaning apparatus according to an example of the present invention includes a first cleaning unit including a first double nozzle for providing a substrate with a first spray containing a first chemical solution and a first solution for dissolving the first chemical solution; A second cleaning unit including a brush provided on the substrate and a single nozzle for providing a second chemical solution different from the first chemical solution on the substrate; And a second double nozzle for providing on the substrate a second spray containing the same second solution as the first solution for dissolving the third drug solution, And a cleaning section.

As described above, the cleaning apparatus according to the embodiment of the present invention may include a first cleaning unit having a first double nozzle, a second cleaning unit having brushes, and a third cleaning unit having a second double nozzle . The first double nozzle can provide a first spray of high pressure and a first chemical liquid of low pressure on the substrate. When the first spray is provided prior to the first chemical solution, the particle removal efficiency can be maximally increased. The cleaning efficiency can be improved. The first dual nozzle can reduce contamination of the brushes by the particles. Also, the first double nozzle can reduce reverse contamination of the substrate due to contamination of the brushes.

1 is a view showing an example of a chemical mechanical polishing system of the present invention.
FIG. 2 is a plan view showing an example of the cleaning apparatus of FIG. 1;
FIG. 3 is a view showing an example of the first cleaning unit of FIG. 2. FIG.
FIGS. 4 and 5 are a perspective view and a plan view showing a moving direction of the first high-pressure nozzle and the first low-pressure nozzle of FIG. 3;
FIG. 6 is a view showing the first high-pressure nozzle first low-pressure nozzle of FIG. 3; FIG.
FIG. 7 is a graph showing particle removal efficiency of the first chemical liquid and the first spray according to the sizes of the particles of FIG. 6;
FIG. 8 is a perspective view showing an example of the second cleaning unit of FIG. 2. FIG.
FIG. 9 is a view showing an example of the third cleaning unit of FIG. 2. FIG.
10 is a perspective view showing a moving direction of the second high-pressure nozzle and the second low-pressure nozzle of FIG.
Fig. 11 is a view showing the second high-pressure nozzle and the second low-pressure nozzle of Fig. 3;
FIG. 12 is a graph showing the zeta potential of the substrate and particles according to the PH of the third chemical solution of FIG. 11; FIG.
13 is a flow chart showing a method of manufacturing a semiconductor device of the chemical mechanical polishing system of the present invention.
14 is a plan view showing an example of the cleaning apparatus of FIG.
FIG. 15 is a graph showing particle removal efficiency according to the impact force of the first and second sprayers of FIGS. 6 and 11. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 shows an example of a chemical mechanical polishing system 100 of the present invention.

Referring to Figure 1, a chemical mechanical polishing system 100 may include a carrier loading device 10, a substrate transfer device 20, a polishing device 30, a cleaning device 40, and a drying device 50 have. The carrier loading device 10 can house the carriers 12. [ The substrate transfer apparatus 20 can transfer the substrate W in the carriers 12 to the polishing apparatus 30, the cleaning apparatus 40, and the drying apparatus 50. [ The substrate transfer apparatus 20 may include a robot arm that moves along the guide rails 22. The guide rails 22 may be disposed between the polishing apparatus 30 and the cleaning apparatus 40. The polishing apparatus 30 may include a plurality of polishing pads 32. Each of the polishing pads 32 can polish the substrate W. [ The cleaning apparatus 40 can clean the polished substrate W. The drying apparatus 50 can dry the cleaned substrate W. [ The dried substrate W may be loaded into the carriers 12 by the substrate transport apparatus 20. [

Fig. 2 shows an example of the cleaning device 40 of Fig.

Referring to Figures 1 and 2, the cleaning apparatus 40 may be a deionized-water-based cleaning apparatus. According to one example, the cleaning device 40 may include a first cleaning portion 60, a second cleaning portion 70, and a third cleaning portion 80. The first cleaning part 60, the second cleaning part 70 and the third cleaning part 80 can sequentially remove the particles (11 in FIG. 6) on the substrate W.

Fig. 3 shows an example of the first cleaning section 60 of Fig.

Referring to FIG. 3, the first cleaning part 60 can clean the substrate W with the first chemical solution 61 and the first spray 68. According to one example, the first cleaning portion 60 includes a first chuck 62, a first shaft 63, a first arm 64, and a first double nozzle 66 can do.

The first chuck 62 may clamp the substrate W. [ The first chuck 62 may rotate the substrate W. For example, the first chuck 62 may rotate the substrate W at about 60 rpm to about 1000 rpm.

The first shaft 63 may be disposed adjacent to the first chuck 62. The first arm 64 may be connected to the first shaft 63. The first shaft 63 can rotate the first arm 64 to move the first double nozzle 66 from the center of the substrate W to the edge.

The first arm 64 may connect the first double nozzle 66 to the first shaft 63. The first arm 64 can move the first double nozzle 66 onto the substrate W by the rotation of the first shaft 63. [

The first double nozzle 66 can provide the first chemical liquid 61 and the first spray 68 on the substrate W. [ According to one example, the first double nozzle 66 may include a first high pressure nozzle 65 and a first low pressure nozzle 67.

The first high-pressure nozzle 65 may be connected to the first arm 64. The first high-pressure nozzle 65 may be a jet spray nozzle or a two-fluid nozzle. The first high-pressure nozzle 65 may provide a first spray 68 on the substrate W. The first spray 68 may include a first solution 68a and a first transport gas 68b. The first solution 68a may comprise de-ionized (DI water), carbonated water, or isopropylene alcohol (IPA). The first transport gas 68b may form the first solution 68a with the first spray 68. [ First transport gas (68b), for example, it can include nitrogen (N ₂₎ or bulhal gases. The first transport gas 68b may be provided at a flow rate of 50 lpm to 300 lpm (liter per minute). The first spray 68 and the first transport gas 68b may be provided on the substrate W at about 2 atmospheres to about 10 atmospheres.

The first low-pressure nozzle 67 may be connected to the first high-pressure nozzle 65. For example, the first high pressure nozzle 65 and the first low pressure nozzle 67 may be spaced about 5 cm apart. The first low-pressure nozzle 67 can provide the first chemical liquid 61 on the substrate W. The pressure of the first chemical liquid 61 may be lower than the pressure of the first spray 68. [ The first chemical liquid 61 may have a flow rate of 50 cpm to 800 cpm (cubic centimeter per minute) and a pressure of 1 atm or atmospheric pressure. The first drug solution 61 may contain an acidic solution. For example, the first chemical liquid 61 may include hydrofluoric acid (HF). The hydrofluoric acid may have a weight percentage of 0.01 wt% to 2 wt%. The first chemical solution 61 can be dissolved in the first solution 68a. Alternatively, the first low-pressure nozzle 67 may be connected to the first arm 64, and the first high-pressure nozzle 65 may be connected to the first low-pressure nozzles 67.

Figs. 4 and 5 show the moving directions of the first high-pressure nozzle 65 and the first low-pressure nozzle 67 in Fig.

4 and 5, the first low-pressure nozzle 67 may be connected to the first high-pressure nozzle 65 in the first direction 69a. The first low pressure nozzle 67 and the first high pressure nozzle 65 can be moved in the second direction 69b by the first arm 64. [ The first direction 69a may be opposite to the second direction 69b.

The first chemical liquid 61 and the first spray 68 may be provided in the second direction 69b from the center of the substrate W to the edge. The first chemical liquid 61 and the first spray 68 may be gradually scattered along the second direction 69b. That is, the second direction 69b may be defined as a direction in which the first spray 68 proceeds ahead of the first chemical solution 61. [

FIG. 6 shows the first high-pressure nozzle 65 and the first low-pressure nozzle 67 of FIG.

6, the first high-pressure nozzle 65 and the first low-pressure nozzle 67 may be spaced apart from the substrate W by a first height h ₁ . For example, the first height h ₁ may be about 5 cm. The first low-pressure nozzle 67 may be disposed approximately 0 to 100 mm higher than the first high-pressure nozzle 65.

The first spray 68 can separate a portion of the particles 11 from the substrate W at a high pressure. Alternatively, the first spray 68 may cause a portion of the top surface of the substrate W to become wet. The first medicament liquid (61) can be dissolved in the first spray (68). The first spray 68 may apply a physical force to the first chemical solution 61 to increase the cleaning force together with the first chemical solution 61.

The first chemical liquid 61 may be dropped on the substrate W. [ The first low-pressure nozzle 67 may be a droplet nozzle. The first chemical liquid 61 can lift a part of the particles 11 from the upper surface of the substrate W by etching the upper surface of the substrate W. [ The upper surface of the substrate W may be formed of a thin film of a silicon oxide film. The particles 11 may comprise abrasive particles, silicon oxide particles, or metal particles. A part of the separated particles 11 and the first chemical liquid 61 can be removed from the substrate W by rotation of the first chuck 62 of Fig.

FIG. 7 shows particle removal efficiency of the first chemical liquid 61 and the first spray 68 according to the size of the particles 11 of FIG.

Referring to FIG. 7, when the first spray 68 is moved ahead of the first chemical solution 61 in the second direction 69b, the particle removal efficiency may be the highest. Therefore, the cleaning efficiency of the particles 11 can be improved.

For example, the particle removal efficiency 92 of the first spray 68 and the first chemical 61 provided in the second direction 69b may be up to about 92%. The particle removal efficiency 92 of the first spray 68 and the first chemical solution 61 provided in the second direction 69b is increased by 70% to 92% with respect to the particles 11 of about 45 nm to about 100 nm size The particle removal efficiency 92 of the first spray 68 and the first chemical solution 61 provided in the second direction 69b can be constant at 92% for 100 nm to 200 nm size particles 11. [ have. Most of the particles 11 can be removed. For example, the first spray 68 and the first chemical solution 61 can mainly remove the particles 11, such as the metal particles of the largest size.

The particle removal efficiency 94 of the first chemical solution 61 and the first spray 68 provided in the first direction 69a may be up to about 85%. The particle removal efficiency 94 of the first chemical solution 61 and the first spray 68 provided in the first direction 69a is about 85% constant for the particles 11 of about 45 nm to about 200 nm size . The first direction 69a can be defined as the direction in which the first chemical liquid 61 advances before the first spray 68. [ Although not shown, when the first chemical liquid 61 is supplied to the substrate W before the first spray 68, the first chemical liquid 61 is supplied onto the substrate W by the first spray 68 As shown in FIG. Defective cleaning of the particles 11 may occur. In addition, when the first spray 68 reaches the outer circumferential surface of the substrate W, the first chemical solution 61 can be provided outside the substrate W. [ A loss of the first chemical liquid 61 may be generated.

The particle removal efficiency 96 of the first spray 68 alone can be up to about 64%. The first spray 68 can more effectively remove the particles 11 than the first chemical solution 61. [ The particle removal efficiency 96 of the first spray 68 alone may gradually increase from about 20% to 64% for the particles 11 of 50 nm to 125 nm size. The particle removal efficiency 96 of only the first spray 68 can be reduced to about 60% to about 50% for the particles 11 of 125 nm to 200 nm size.

The particle removal efficiency 98 of only the first chemical liquid 61 can be at most about 44%. If the size of the particles 11 increases from about 45 nm to about 200 nm, the particle removal efficiency 98 of only the first chemical liquid 61 can be reduced to 44% to 20%.

Although not shown, the first high-pressure nozzle 65 is arranged in the first direction 69a When moved, the first low-pressure nozzle 67 may precede the first high-pressure nozzle 65. That is, the first low-pressure nozzle 67 can be moved inside the moving region of the first high-pressure nozzle 65. At this time, the first chemical liquid 61 is provided on the outer surface of the substrate W (not shown) and then on the substrate W. Defective cleaning of the substrate W by the first chemical liquid 61 may occur. In addition, if the first spray 68 is not provided up to the edge of the substrate W, cleaning deterioration of the edge of the substrate W may be abruptly deteriorated.

In other words, the first low-pressure nozzle 67 may be located close to the center of the substrate relative to the first high-pressure nozzle 65. In contrast, when the first low-pressure nozzle 67 is located on the outer side of the substrate relative to the first high-pressure nozzle 65, it is supplied to a pawl (not shown) outside the substrate W to cause scattering, . In order to prevent such scattering, when the first low-pressure nozzle moves so as not to fall outside the substrate, the supply of the first spray 68 ends at the middle portion of the substrate W, so that the detergency of the edge rapidly drops, have.

FIG. 8 shows an example of the second cleaning section 70 of FIG.

Referring to FIGS. 2 and 8, the second cleaning portion 70 may include a plurality of rollers 72, a plurality of brushes 74, and a single nozzle 76.

The plurality of rollers 72 may be disposed at the edge of the substrate W. [ For example, the four rollers 72 may be disposed at regular intervals on the edge of the substrate W. [ The rollers 72 can rotate the substrate W.

The plurality of brushes 74 can separate the particles 11 from the substrate W. [ For example, the brushes 74 may include a lower brush 73 and an upper brush 75. The substrate W may be disposed between the lower brush 73 and the upper brush 75. The lower brush 73 may be disposed below the substrate W. [ The upper brush 75 may be disposed on the substrate W. The lower brush 73 and the upper brush 75 can be rotated in directions opposite to each other. The upper brush 75 can remove a part of the particles 11 on the substrate W. [ For example, the upper brush 75 may primarily remove particles 11, such as abrasive particles.

The single nozzle 76 may provide the second chemical liquid 71 on the substrate W. [ For example, the second chemical liquid 71 may contain an alkaline solution of ammonia water. The ammonia water may have a weight percentage of 0.01 wt% to 4 wt%. The second chemical liquid 71 can prevent the adsorption of the substrate W and the particles 11. The single nozzle 76 may be arranged to precede the brushes 74.

6 to 8, the first double nozzle 66 of the first cleaning portion 60 can reduce the contamination of the brushes 74. As shown in Fig. If most of the particles 11 are not removed by the first cleaning unit 60, the brushes 74 may be contaminated by the particles 11. [ For example, as the size of the particles 11 increases, the contamination of the brushes 74 may increase. The contaminated brushes 74 can contaminate the substrate W again. Contamination of the substrate W by the contaminated brushes 74 can be defined as reverse contamination of the substrate W. [ Accordingly, the first double nozzle 66 of the first cleaning unit 60 removes most of the particles 11 on the substrate W to remove contamination of the brushes 74 and reverse contamination of the substrate W Can be reduced.

Fig. 9 shows an example of the third cleaning section 80 of Fig.

Referring to FIG. 9, the third cleaning unit 80 can clean the substrate W using the third chemical liquid 81 and the second spray 88. According to one example, the third cleaning portion 80 may include a second chuck 82, a second shaft 83, a second arm 84, and a second double nozzle 86.

And the second chuck 82 can clamp the substrate W. [ The second chuck 82 can rotate the substrate W. For example, the second chuck 82 may rotate the substrate W at about 60 rpm to about 1000 rpm.

The second shaft 83 may be disposed adjacent to the second chuck 82. The second arm 84 may be connected to the second shaft 83. The second shaft 83 rotates the second arm 84 to move the second double nozzle 86 from the center of the substrate W to the edge.

The second arm 84 can couple the second double nozzle 86 with the second shaft 83. That is, one side of the second arm 84 may be connected to the second shaft 83, and the other side of the second arm 84 may be connected to the second double nozzle 86. The second arm 84 can move the second double nozzle 86 onto the substrate W by the rotation of the second shaft 83. [

The second double nozzle 86 may provide a third chemical solution 81 and a second spray 88 on the substrate W. [ For example, the second double nozzle 86 may provide the third chemical liquid 81 and the second spray 88 with a height of about 5 cm from the substrate W. [

According to one example, the second double nozzle 86 may include a second high pressure nozzle 85 and a second low pressure nozzle 87.

The second high-pressure nozzle 85 may be connected to the second arm 84. The second high-pressure nozzle 85 may be a jet spray nozzle or an air flow nozzle. The second high-pressure nozzle 85 can provide a second spray 88 on the substrate W. The second spray 88 may have the same pressure as the first spray 68. For example, the second spray 88 may have a pressure of from about 2 atmospheres to about 10 atmospheres. The second spray 88 may include a second solution 88a and a second transport gas 88b. The second solution 88a may be the same as the first solution 68a. The second solution 88a may comprise, for example, deionized water, carbonated water, or isopropylene alcohol. The second transport gas 88b may be the same as the first transport gas 68b. Second transport gas (88b), for example, it can include nitrogen (N ₂₎ or inert gas. The second transport gas 88b may be provided at a flow rate of 50 lpm to 300 lpm. The second spray 88 and the second transport gas 88b may be provided on the substrate W at about 2 atmospheres to about 10 atmospheres.

The second low-pressure nozzle 87 may be connected to the second high-pressure nozzle 85. For example, the second high-pressure nozzle 85 and the second low-pressure nozzle 87 may be spaced apart by an interval of about 5 cm. And the second low-pressure nozzle 87 can provide the third chemical liquid 81 on the substrate W. [ The pressure of the third chemical liquid 81 may be lower than the pressure of the second spray 88. [ The third chemical liquid 81 may be the same as the second chemical liquid 71. For example, the third chemical solution 81 and the chemical solution 81 may include an alkaline solution. The third chemical liquid 81 may contain ammonia water. The flow rate and pressure of the third drug solution 81 may be the same as the pressure and flow rate of the first drug solution 61. For example, the third chemical liquid 81 may have a flow rate of 50 cpm to about 800 cpm and a normal pressure. The third chemical liquid 81 may be dissolved in the second solution 88a. Alternatively, the second low pressure nozzle 87 may be connected to the second arm 84, and the second high pressure nozzle 85 may be connected to the first low pressure nozzles 67.

10 shows the moving directions of the second high-pressure nozzle 85 and the second low-pressure nozzle 87 in Fig.

Referring to FIGS. 4 and 10, the second low-pressure nozzle 87 may be connected to the second high-pressure nozzle 85 in the third direction 89a. The third direction 89a may be the same as the first direction 69a. The second low pressure nozzle 87 and the second high pressure nozzle 85 can be moved in the fourth direction 89b by the second arm 84. [ The fourth direction 89b may be the same as the second direction 69b. The fourth direction 89b may be opposite to the third direction 89a.

The third chemical liquid 81 and the second spray 88 may be provided in the fourth direction 89b from the center of the substrate W to the edge. The third chemical liquid 81 and the second spray 88 may be gradually scattered along the fourth direction 89b. That is, the fourth direction 89b can be defined as a direction in which the second spray 88 advances before the third chemical liquid 81. [

FIG. 11 shows the second high-pressure nozzle 85 and the second low-pressure nozzle 87 of FIG.

Referring to FIG. 11, the second high-pressure nozzle 85 and the second low-pressure nozzle 87 may be spaced apart from the substrate W by a second height h ₂ . The second height h ₂ may be about 5 cm. The second low-pressure nozzle 87 may be arranged to be higher than the second high-pressure nozzle 85 by about 0 mm to 100 mm.

The second spray 88 can separate a portion of the particles 11 from the substrate W at a high pressure. The third chemical liquid 81 may be dissolved in the second spray 88. [

The third chemical liquid 81 may be dropped on the substrate W. [ The second low-pressure nozzle 87 may be a droplet nozzle. The third chemical liquid 81 can prevent the adsorption of the substrate W and the particles 11 by the electrostatic repulsive force. For example, the second spray 88 and the third chemical 81 may mainly remove particles 11 such as silicon oxide film particles.

Referring again to FIG. 10, the particles 11 can be removed by the chemical cleaning force by the third chemical solution 81, the physical force of the second spray 88, and centrifugal force by rotation of the substrate. As shown in FIG. A part of the particles 11, and the third chemical liquid 81 can be removed by centrifugal force.

12 shows the zeta potentials of the substrate W and the particles 11 according to the PH of the third chemical liquid 81 in Fig.

Referring to FIG. 12, the electrostatic repulsion between the substrate W and the particles 11 may increase with the magnitude of the absolute values of their zeta potentials. For example, when the PH of the third chemical solution 81 increases, the zeta potential 102 of the substrate W and the zeta potential 104 of the particle have the same charge and the absolute value may increase. An increase in the zeta potential of the same charge can increase the electrostatic repulsion. The absolute value of the zeta potential 102 of the substrate W and the absolute value of the zeta potential 104 of the particles 11 can be increased. The particles 11 can be separated from the substrate W and drifted in the third chemical solution 81. [ The buoyancy of the particles 11 in the third chemical liquid 81 may be proportional to the electrostatic repulsive force of the substrate W and the particles 11. [ Accordingly, the third chemical solution 81 may contain a strong alkaline solution of ammonia water. Adsorption of the particles 11 and the substrate W can be prevented. Contamination of the particles 11 can be prevented.

A method of manufacturing a semiconductor device of the chemical mechanical polishing system 100 having the above-described structure will now be described.

13 shows a method of manufacturing a semiconductor device of the chemical mechanical polishing system 100 of the present invention.

13, a method of manufacturing a semiconductor device according to the present invention includes a step S10 of preparing a substrate W, a step S20 of polishing the substrate W, a step S30 of cleaning the substrate W, , And drying the substrate W (S40).

First, the substrate W is prepared to have semiconductor devices through a plurality of unit processes (S10). For example, the semiconductor device may include a memory device, a solid state driver (SSD), and a logic device application processor (AP). Alternatively, the semiconductor device may comprise an active element of a transistor and a diode or a passive element of a capacitor and a resistor.

Referring to FIGS. 1 and 13, the polishing apparatus 30 polishes the substrate W by a chemical mechanical polishing method (S20). The substrate W can be polished flat by the polishing apparatus 30. [ Although not shown, the polishing target film of the substrate W may mainly include an interlayer insulating film of a silicon oxide film. Alternatively, the substrate to be polished of the substrate W may include a metal layer such as copper.

Referring to FIG. 2 and FIG. 13, the cleaning apparatus 40 cleans the substrate W in a wet manner by a cleaning method after chemical mechanical polishing (S30). According to one example, step S30 of cleaning the substrate W includes step S32 of providing the first spray 68 and the first chemical solution 61 on the substrate W, (S34) of providing the second chemical liquid (P) and brushes (74), and providing the second spray (88) and the third chemical liquid (81).

3 to 6, the first double nozzle 66 provides the first spray 68 and the first chemical solution 61 on the substrate W (S32). The first chemical liquid 61 may be supplied at a lower pressure than the first spray 68. [ The first spray 68 may be provided at about 2 atmospheres to 10 atmospheres. The first spray 68 may be provided on the substrate W prior to the first chemical solution 61. [ The first chemical liquid 61 may be supplied at one atmospheric pressure. The first spray 68 may be provided before the first chemical solution 61 in the second direction 69b from the center of the substrate W to the edge. The first spray 68 and the first chemical liquid 61 can separate a part of the particles 11 from the substrate W. [ Part of the particles 11 separated from the first chemical solution 61 can be removed by centrifugal force by rotation of the substrate W. [

8, a substrate W is provided between the brushes 74, and a single nozzle 76 provides a third chemical solution 81 on the substrate W (S34). The brushes 74 separate a part of the particles 11 on the substrate W and the third chemical liquid 81 prevents the absorption of a part of the separated particles 11 and the substrate W. [ can do.

9 to 11 and 13, the second double nozzle 86 of the third cleaning part 80 provides a second spray 88 and a third chemical solution 81 on the substrate W (S36). The second spray 88 may be provided ahead of the third chemical liquid 81 in the fourth direction 89b from the center of the substrate W to the edge. The second spray 88 separates a part of the particles 11 from the substrate W and the third chemical 81 seals a part of the particles 11 separated from the substrate W by the electrostatic repulsive force Can be prevented. Part of the particles 11 separated from the third chemical solution 81 can be removed by centrifugal force as the substrate W rotates.

Referring again to FIGS. 1 and 13, the drying apparatus 50 can dry the substrate W by removing moisture on the substrate W (S40).

Fig. 14 shows an example of the cleaning device 40a of Fig.

6, 11, and 14, the cleaning apparatus 40a may include a first cleaning unit 60 and a third cleaning unit 80. [ When the pressure of the first spray 68 of the first cleaning portion 60 and the pressure of the second spray 88 of the third cleaning portion 80 are further increased, the second cleaning portion 70 of Fig. Can be removed. The pressure of the first and second sprayers 68 and 88 can be proportional to the impact force of the first and second sprayers 68 and 88 and the substrate W. [ A pattern falling damage defect of the substrate W can be prevented even if the impact force is increased. It may be because the substrate W has been planarized by a chemical mechanical process.

Fig. 15 shows the particle removal efficiency according to the impact force of the first and second sprayers 68, 88 of Figs. 6 and 11. Fig.

Referring to FIG. 15, the particle removal efficiency can be increased when the impact force of the first and second sprayers 68 and 88 is increased. For example, if the impact force of the first and second sprayers 68, 88 is increased from 60 gF to 80 gF, the particle removal efficiency can increase from 77% to 90%.

Accordingly, if the impact force of the first and second sprayers 68 and 88 is increased to about 80 gF or more, the cleaning device 40a of Fig. 14 can achieve 100% particle removal efficiency without the second cleaning part 70 of Fig. Lt; / RTI > In addition, the cleaning device 40a can prevent reverse contamination of the substrate W due to contamination of the brushes 74. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the exemplary embodiments or constructions. It can be understood that It is therefore to be understood that the above-described embodiments and applications are illustrative in all aspects and not restrictive.

Claims (20)

A first cleaning unit including a first double nozzle for providing a substrate with a first spray containing a first chemical solution and a first solution for dissolving the first chemical solution; And
A second cleaning liquid containing a second chemical liquid different from the first chemical liquid and a second double nozzle for dissolving the second chemical liquid and providing on the substrate a second spray containing the same second solution as the first solution, And a cleaning unit. The method according to claim 1,
And a second cleaning unit disposed between the first cleaning unit and the second cleaning unit,
Wherein the second cleaning portion includes a brush provided on the substrate and a single nozzle provided on the substrate in the same edge direction as the second chemical solution. 3. The method of claim 2,
Wherein the first chemical liquid comprises an acidic solution,
Wherein the second and third chemical fluids comprise an alkaline solution. The method of claim 3,
Wherein the first chemical liquid comprises hydrofluoric acid,
Wherein the second and third chemical liquids contain ammonia water. 5. The method of claim 4,
Wherein the hydrofluoric acid has a weight percentage of 0.1 wt% to 2 wt%. 5. The method of claim 4,
And the ammonia water has a weight percentage of 0.1 wt% to 4 wt%. The method according to claim 1,
The first double nozzle comprises:
A first high pressure nozzle for providing the first spray at a first pressure; And
And a first low-pressure nozzle connected to the first high-pressure nozzle in a first direction and providing the first chemical liquid at a second pressure lower than the first pressure. 8. The method of claim 7,
The first cleaning unit may further include a first arm for moving the first double nozzle onto the substrate,
Wherein the first arm moves the first double nozzle in a second direction opposite to the first direction from the center of the substrate to the edge during the provision of the first chemical liquid and the first spray. The method according to claim 1,
Said second double nozzle comprising:
A second high pressure nozzle for providing the second spray at a third pressure; And
And a second low pressure nozzle connected to the second spray nozzle in a third direction and providing the second chemical liquid at a fourth pressure lower than the third pressure. 9. The method of claim 8,
The third cleaning unit may further include a second arm for moving the second double nozzle onto the substrate,
Wherein the second arm moves the second double nozzle in a fourth direction opposite to the third direction from the center of the substrate to the edge during the provision of the second chemical liquid and the second spray. A substrate carrying section for carrying a substrate;
A polishing apparatus comprising a polishing pad for polishing the substrate; And
And a cleaning device for cleaning the substrate polished in the polishing device to remove particles generated from the polishing device,
The cleaning apparatus comprises:
A first cleaning unit comprising a first cleaning liquid and a first double nozzle providing a first spray containing a first solution for dissolving the first chemical liquid to the substrate; And
A second cleaning liquid containing a second chemical liquid different from the first chemical liquid and a second double nozzle for dissolving the second chemical liquid and providing on the substrate a second spray containing the same second solution as the first solution, / RTI > wherein the chemical mechanical polishing system comprises: a substrate; 12. The method of claim 11,
Wherein the first chemical liquid is a chemical mechanical polishing system comprising an acidic solution 12. The method of claim 11,
Wherein the second chemical liquid comprises an alkaline solution. 12. The method of claim 11,
Wherein the first double nozzle provides the first spray prior to the first chemical solution in the edge direction from the center of the substrate. 12. The method of claim 11,
Wherein the second double nozzle provides the second spray prior to the second chemical solution in the edge direction from the center of the substrate. Providing a first spray containing a first drug solution and a first solution for dissolving the first drug solution on a substrate;
Providing a brush on the substrate, and providing a second chemical solution different from the first chemical solution; And
Providing a third chemical solution identical to the second chemical solution on the substrate and a second spray containing a second solution identical to the first solution for dissolving the third chemical solution. 17. The method of claim 16,
Wherein the first chemical liquid comprises an acidic solution,
Wherein the second chemical liquid and the third chemical liquid comprise an alkaline solution. 17. The method of claim 16,
Wherein the first chemical liquid comprises hydrofluoric acid. 17. The method of claim 16,
Wherein the second chemical liquid and the third chemical liquid contain ammonia water. 17. The method of claim 16,
Wherein the first spray is provided at a pressure higher than the pressure of the first chemical solution and is provided prior to the first chemical solution in the edge direction from the center of the substrate.

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