WO2023080015A1 - Substrate treatment apparatus and substrate treatment method - Google Patents

Substrate treatment apparatus and substrate treatment method Download PDF

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Publication number
WO2023080015A1
WO2023080015A1 PCT/JP2022/039687 JP2022039687W WO2023080015A1 WO 2023080015 A1 WO2023080015 A1 WO 2023080015A1 JP 2022039687 W JP2022039687 W JP 2022039687W WO 2023080015 A1 WO2023080015 A1 WO 2023080015A1
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WO
WIPO (PCT)
Prior art keywords
liquid
substrate
substrate processing
nozzle
mist
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PCT/JP2022/039687
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French (fr)
Japanese (ja)
Inventor
京成 後藤
淳 野上
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東京エレクトロン株式会社
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Publication of WO2023080015A1 publication Critical patent/WO2023080015A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present disclosure relates to a substrate processing apparatus and a substrate processing method.
  • the present disclosure provides a technology capable of suppressing charging of the substrate and adhesion of particles.
  • a substrate processing apparatus includes a holding unit that rotatably holds a substrate, and a first discharge unit that discharges a mist-like weakly acidic first liquid toward a processing surface of the rotating substrate. and a second ejection part for ejecting a weakly alkaline second liquid toward the processing surface to form a liquid film containing the second liquid on the processing surface.
  • FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment
  • FIG. FIG. 2 is a cross-sectional view showing part of the substrate processing apparatus according to the embodiment.
  • FIG. 3 is a flow chart showing the substrate processing method according to the embodiment.
  • FIG. 4A is a process chart showing the substrate processing method according to the embodiment.
  • FIG. 4B is a process chart showing the substrate processing method according to the embodiment.
  • FIG. 4C is a process chart showing the substrate processing method according to the embodiment.
  • FIG. 4D is a process chart showing the substrate processing method according to the embodiment.
  • FIG. 5 is a diagram for explaining the relationship between the pH of the chemical solution and the amount of charge on the substrate.
  • FIG. 6 is a diagram showing the results of measuring the charge amount of the substrate.
  • FIG. 7 is a diagram showing the results of measuring the number of particles.
  • FIG. 1 A substrate processing apparatus 1 according to an embodiment will be described with reference to FIGS. 1 and 2.
  • FIG. The substrate processing apparatus 1 is of a single-wafer type that processes substrates W one by one.
  • the substrate processing apparatus 1 supplies a cleaning liquid to the upper surface Wa of the substrate W to clean the substrate W.
  • the substrate W is, for example, a semiconductor wafer, and has a surface on which a thermal oxide film (eg, SiO 2 ) is exposed.
  • the substrate may have a surface on which a nitride film (eg, Si 3 N 4 ) is exposed, or may have a surface on which silicon (Si) is exposed.
  • the substrate processing apparatus 1 includes a processing container 10 , a holding section 20 , a first discharge section 30 , a second discharge section 40 , a driving section 50 , a cup 60 and a control section 90 .
  • the processing container 10 accommodates the holding part 20 inside.
  • the substrates W are carried into the processing container 10 by a transport device (not shown), and are cleaned with a cleaning liquid inside the processing container 10 .
  • the cleaned substrate W is carried out of the processing container 10 by the transport device.
  • the holding part 20 horizontally holds the substrate W inside the processing container 10 .
  • the holding unit 20 is, for example, a vacuum chuck that holds the central portion of the lower surface Wb of the substrate W by suction.
  • the holding part 20 may be an electrostatic chuck, a mechanical chuck, or the like.
  • the holding unit 20 is provided so as to be rotatable together with the substrate W around the rotation axis Ax while holding the substrate W. As shown in FIG.
  • the holding portion 20 is rotated by a rotation driving portion 21 such as a motor. That is, the rotation driving section 21 rotates the substrate W held by the holding section 20 about the rotation axis Ax.
  • the first discharge section 30 discharges the cleaning liquid onto the upper surface Wa of the substrate W held by the holding section 20 .
  • the first discharge section 30 has a liquid supplier 31 , a gas supplier 32 and a nozzle 33 .
  • the liquid supplier 31 has a liquid supply source 31a, a flow controller 31b, an on-off valve 31c, and a supply line 31d.
  • the liquid supply source 31a delivers the first liquid to the supply line 31d.
  • the first liquid is a weakly acidic liquid.
  • the first liquid may be a liquid having a hydrogen ion exponent (pH) of 4 or more and 5 or less, for example.
  • As the first liquid for example, carbonated water ( CO2 water) or ozone water can be used.
  • the flow controller 31b is provided between the liquid supply source 31a and the on-off valve 31c in the supply line 31d, and adjusts the flow rate of the first liquid flowing through the supply line 31d.
  • the on-off valve 31c is provided between the flow controller 31b and the nozzle 33 in the supply line 31d, and opens and closes the flow path of the supply line 31d.
  • the gas supplier 32 has a gas supply source 32a, a flow controller 32b, an on-off valve 32c and a supply line 32d.
  • Gas supply source 32a delivers gas to supply line 32d.
  • the gas is an inert gas such as nitrogen gas.
  • the flow controller 32b is provided between the gas supply source 32a and the on-off valve 32c in the supply line 32d, and adjusts the flow rate of the gas flowing through the supply line 32d.
  • the on-off valve 32c is provided between the flow controller 32b and the nozzle 33 in the supply line 32d, and opens and closes the flow path of the supply line 32d.
  • the nozzle 33 is arranged above the substrate W with the discharge port 33a facing downward.
  • the nozzle 33 ejects the first cleaning liquid from the ejection port 33a toward the upper surface Wa of the substrate W held by the holding unit 20 .
  • the nozzle 33 merges the first liquid supplied from the liquid supply source 31a through the supply line 31d and the gas supplied from the gas supply source 32a through the supply line 32d, and discharges them.
  • the first liquid is misted by the gas and discharged toward the upper surface Wa of the rotating substrate W.
  • the nozzle 33 merges the first liquid with the flow of gas to make the first liquid into mist, and sprays the two fluids containing the mist-shaped first liquid and gas onto the upper surface Wa of the rotating substrate W. It is a two-fluid nozzle that discharges toward the target.
  • the nozzle 33 is not limited to a two-fluid nozzle as long as it can eject the mist-like first liquid.
  • the second ejection section 40 ejects the second liquid onto the upper surface Wa of the substrate W held by the holding section 20 .
  • the second discharge section 40 has a liquid supplier 41 and a nozzle 43 .
  • the liquid supplier 41 has a liquid supply source 41a, a flow controller 41b, an on-off valve 41c, and a supply line 41d.
  • the liquid supply source 41a delivers the second liquid to the supply line 41d.
  • the second liquid is a weakly alkaline liquid.
  • the second liquid may be a liquid with a pH of 8 or more and 10 or less, for example.
  • aqueous ammonia NH 4 OH
  • the flow controller 41b is provided between the liquid supply source 41a and the on-off valve 41c in the supply line 41d, and adjusts the flow rate of the second liquid flowing through the supply line 41d.
  • the on-off valve 41c is provided between the flow controller 41b and the nozzle 43 in the supply line 41d, and opens and closes the flow path of the supply line 41d.
  • the nozzle 43 is arranged above the substrate W with the discharge port 43a directed obliquely downward.
  • the nozzle 43 ejects the second liquid from the ejection port 43a toward the upper surface Wa of the substrate W held by the holder 20 .
  • the second liquid is discharged in the form of bundles rather than in the form of mist.
  • the second liquid is supplied to the upper surface Wa of the rotating substrate W, and spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film. That is, the nozzle 43 ejects the second liquid toward the upper surface Wa of the substrate W to form a liquid film containing the second liquid on the upper surface Wa of the substrate W. As shown in FIG.
  • the drive unit 50 moves the nozzles 33 and 43 in directions including the radial direction of the substrate W.
  • the drive section 50 has a guide rail 51 , a first drive section 52 and a second drive section 53 .
  • the guide rail 51 extends in the horizontal direction (X direction) inside the processing container 10 and is fixed inside the processing container 10 .
  • the first driving section 52 has a moving section 52a and an arm 52b.
  • the moving part 52a moves in the horizontal direction (X direction) along the guide rail 51.
  • the arm 52b expands and contracts in each of the horizontal direction (the Y direction perpendicular to the X direction) and the vertical direction (the Z direction).
  • the first drive unit 52 can move the nozzle 33 in the X-axis direction, the Y-axis direction, and the Z-axis direction.
  • the second driving section 53 has a moving section 53a and an arm 53b.
  • the moving part 53a moves in the horizontal direction (X direction) along the guide rail 51.
  • the arm 53b extends and contracts in each of the horizontal direction (the Y direction orthogonal to the X direction) and the vertical direction (the Z direction).
  • the second drive unit 53 can move the nozzle 43 in the X-axis direction, the Y-axis direction, and the Z-axis direction.
  • the cup 60 is provided inside the processing container 10 .
  • the cup 60 is provided so as to surround the periphery of the substrate W held by the holding portion 20 .
  • the cup 60 includes one or more cup bodies having an annular planar shape. Each cup has a cylindrical shape with an upper and a lower opening, and the substrate W held by the holder 20 is arranged inside each cup.
  • the cup 60 receives liquid (for example, cleaning liquid, second liquid) that scatters from the substrate W. As shown in FIG.
  • the control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory.
  • the storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1 .
  • the control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute programs stored in the storage medium 92 .
  • the substrate processing apparatus 1 includes two ejection units (the first ejection unit 30 and the second ejection unit 40). may be provided with a discharge part.
  • Another ejection part may include, for example, an ejection part that ejects liquid toward the upper surface Wa of the substrate W, like the second ejection part 40 .
  • the liquid may be the same liquid as the second liquid, or may be a liquid different from the second liquid (for example, a dry liquid).
  • the drying liquid include organic solvents such as IPA (isopropyl alcohol).
  • the substrate processing apparatus 1 may also include a bottom surface cleaning unit (not shown) for cleaning the bottom surface Wb of the substrate W held by the holding part 20 .
  • the bottom surface cleaning unit includes, for example, a cleaning body such as a brush or sponge that is pressed against the bottom surface Wb of the substrate W, a nozzle that discharges cleaning liquid, and a driving section that moves the cleaning body and the nozzle.
  • the lower surface cleaning unit cleans the lower surface Wb of the substrate W by moving the cleaning body and the nozzle with the drive section and pressing the cleaning body against the lower surface Wb of the substrate W while supplying the cleaning liquid to the lower surface Wb.
  • one or more suction pads capable of holding a portion other than the central portion of the lower surface Wb of the substrate W may be provided. While the substrate W is being held by the suction pads, the portion of the lower surface Wb of the substrate W that the holding portion 20 contacts (that is, the central portion) can be cleaned. On the other hand, while the substrate W is being held by the holding portion 20, it is possible to clean the portion of the bottom surface of the substrate W that the suction pads come into contact with.
  • a plurality of (for example, three) lifting pins may be provided around the holding portion 20 .
  • the lifting pin is provided so as to be liftable by a lifting mechanism (not shown).
  • the substrate W can be transferred between the lifting pins and a transfer device (not shown) provided outside the processing container 10 .
  • the substrate W can be transferred between the lifting pins and the holding section 20 or the suction pad described above.
  • Substrate processing method An example of a substrate processing method performed in the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 3, 4A, 4B, 4C, and 4D.
  • the substrate processing method is carried out by controlling each unit of the substrate processing apparatus 1 by the control unit 90 .
  • a transport device loads the substrate W into the processing container 10 (step S1). After placing the substrate W on the holding unit 20 , the transport device exits from the inside of the processing container 10 .
  • the holding part 20 holds the substrate W.
  • the rotation driving section 21 rotates the substrate W together with the holding section 20 .
  • the nozzle 43 ejects the second liquid L2 toward the upper surface Wa of the rotating substrate W (step S2).
  • the second liquid L2 spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film.
  • the nozzle 33 ejects the mist-like weakly acidic first liquid L1 toward the upper surface Wa of the rotating substrate W, and the nozzle 43 rotates.
  • the weakly alkaline second liquid L2 is discharged toward the upper surface Wa of the substrate W (step S3).
  • the mist-like weakly acidic first liquid L1 acts on the upper surface Wa of the substrate W to clean the upper surface Wa of the substrate W and suppress the substrate W from being charged. The reason why charging of the substrate W is suppressed will be described later. Adhesion of particles can be suppressed by using the weakly alkaline second liquid L2, but the amount of charge on the substrate W increases.
  • the amount of charge on the substrate W can be reduced by using the weakly acidic first liquid L1 in addition to the weakly alkaline second liquid L2. That is, the amount of charge on the substrate W can be reduced while suppressing the adhesion of particles to the upper surface Wa of the substrate W.
  • particles When ejecting the mist-like first liquid L1 from the nozzle 33, particles may be generated when the first liquid L1 and the gas flow through the supply lines 31d and 32d, respectively, and may be ejected from the nozzle 33 together with the particles. be.
  • the mist-like first liquid L ⁇ b>1 ejected from the nozzle 33 may scatter particles adhering to the inner wall surface of the cup 60 . In this case, if the upper surface Wa of the substrate W is exposed, particles will adhere to the exposed surface. is covered with the liquid film of the second liquid L2. Therefore, adhesion of particles to the upper surface Wa of the substrate W can be further suppressed.
  • the weakly acidic first liquid L1 and the weakly alkaline second liquid L2 are discharged at the same time, a salt is generated by the neutralization reaction.
  • the first liquid L1 is carbonated water or ozone water and the second liquid L2 is ammonia water so as not to precipitate salts. By suppressing precipitation of salts, generation of particles can be suppressed.
  • step S3 the nozzle 33 ejects the mist-like first liquid L1 toward the upper surface Wa of the substrate W while moving in the radial direction of the substrate W.
  • the nozzle 33 may move from the center of the substrate W toward the periphery, or may move from the periphery of the substrate W toward the center.
  • the nozzle 33 may reciprocate between the center of the substrate W and the periphery. By moving the nozzle 33 in the radial direction of the substrate W, the entire radial direction of the substrate W can be cleaned with the mist-like first liquid L1.
  • the nozzle 33 may eject the mist-like first liquid L1 toward the upper surface Wa of the substrate W without moving.
  • step S3 the nozzle 43 ejects the second liquid L2 to the center of the substrate W without moving.
  • the centrifugal force can spread the second liquid L2 over the entire radial direction of the substrate W, and the entire radial direction of the substrate W can be covered with the liquid film of the second liquid L2.
  • the nozzle 43 may discharge the second liquid L2 toward the upper surface Wa of the substrate W while moving in the radial direction of the substrate W.
  • the nozzles 33 stop discharging the first liquid L1, and the nozzles 43 discharge the second liquid L2 toward the upper surface Wa of the rotating substrate W (step S4).
  • the second liquid L2 spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film.
  • step S5 the rotation driving unit 21 rotates the substrate W to The second liquid L2 remaining on the upper surface of W is shaken off, and the substrate W is dried (step S5).
  • the rotation driving unit 21 stops rotating the substrate W.
  • a nozzle (not shown) may supply the drying liquid to the upper surface Wa of the substrate W that is rotating. The dry liquid spreads over the entire upper surface Wa of the substrate W due to centrifugal force, and washes away the second liquid L2 remaining on the upper surface Wa of the substrate W.
  • a nozzle may supply the drying liquid to the upper surface Wa of the substrate W that is rotating. The dry liquid spreads over the entire upper surface Wa of the substrate W due to centrifugal force, and washes away the second liquid L2 remaining on the upper surface Wa of the substrate W.
  • a liquid film of the drying liquid is formed on the upper surface Wa of the substrate W.
  • the liquid film of the drying liquid is shaken off from the upper surface Wa of the substrate W by the rotation of the substrate W, and the substrate W is dried.
  • the holding unit 20 releases the holding of the substrate W, then the transport device receives the substrate W from the holding unit 20, and carries the received substrate W out of the processing container 10 (step S6). After that, the process ends.
  • step S3 the first liquid L1 and the second liquid L2 are simultaneously ejected toward the upper surface Wa of the substrate W.
  • the present invention is limited to this. not.
  • the mist-like first liquid L1 and second liquid L2 may be discharged in order.
  • the mist-like first liquid L1 may be ejected without ejecting the second liquid L2, and then the second liquid L2 may be ejected without ejecting the mist-like first liquid L1. .
  • the second liquid L2 may be ejected without ejecting the mist-like first liquid L1, and then the mist-like first liquid L1 may be ejected without ejecting the second liquid L2. . Further, the mist-like first liquid L1 and the second liquid L2 may be alternately and repeatedly ejected. However, from the viewpoint of shortening the processing time, it is preferable to simultaneously eject the mist-like first liquid L1 and the second liquid L2.
  • the substrate processing method according to the embodiment may have a step of cleaning the lower surface Wb of the substrate W held by the holding part 20 by a lower surface cleaning unit (not shown). This step may be performed at least one timing before step S2, at the same time as step S2, and at the same time as step S3, for example.
  • the lower surface cleaning unit cleans the lower surface Wb of the substrate W by moving the cleaning body and the nozzle with the drive section and pressing the cleaning body against the lower surface Wb of the substrate W while supplying the cleaning liquid to the lower surface Wb.
  • the reason why the mist-like weakly acidic first liquid L1 can suppress charging of the substrate W will be described with reference to FIG.
  • the charging of the substrate W is determined based on the pH of the cleaning liquid supplied to the processing surface of the substrate W and the isoelectric point of the processing surface.
  • the pH of the cleaning liquid When the pH of the cleaning liquid is lower than the isoelectric point of the processing surface, the substrate W tends to be positively (+) charged, and the greater the difference between the pH of the cleaning liquid and the isoelectric point of the processing surface, the greater the amount of positive charge. .
  • the pH of the cleaning solution is higher than the isoelectric point of the surface to be treated, the substrate W tends to be negatively (-) charged. growing.
  • a thermal oxide film which is an example of the processing surface of the substrate W, has an isoelectric point (pH) of 1.5 to 3.7.
  • Carbonated water which is an example of the first liquid L1
  • is weakly acidic and has a pH of 4.5
  • Ammonia water which is an example of the second liquid L2
  • is weakly alkaline and has a pH of 9.7, for example. That is, the difference between the pH of carbonated water and the isoelectric point of the thermal oxide film is smaller than the difference between the pH of ammonia water and the isoelectric point of the thermal oxide film. Therefore, it is considered that charging of the substrate W can be suppressed more effectively by supplying carbonated water to the thermal oxide film than by supplying ammonia water to the thermal oxide film.
  • Example 1 a substrate having a thermal oxide film formed on its upper surface was prepared, then steps S1, S3, S5, and S6 shown in FIG. 3 were performed, and then the charge amount of the substrate was measured.
  • step S 3 two fluids containing carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43 .
  • the carbonated water and the ammonia water used had similar specific resistances. Specifically, carbonated water with a specific resistance of 0.06 M ⁇ cm was used, and ammonia water with a specific resistance of 0.067 M ⁇ cm was used.
  • the substrate was prepared under the same conditions as in Example 1, except that two fluids containing carbonated water and nitrogen gas in the form of mist were discharged from the nozzle 33 in step S3, and the carbonated water was discharged from the nozzle 43. processed.
  • Example 1B the substrate was processed under the same conditions as in Example 1, except that ammonia water was discharged from the nozzles 33 and 43 in step S3.
  • FIG. 6 is a diagram showing the results of measuring the amount of negative charge (>0) at the center of the substrates treated in Example 1, Reference Examples 1A and 1B.
  • FIG. 6 shows relative charge amounts at the center of the substrate in Example 1 and Reference Example 1B when the charge amount at the center of the substrate in Reference Example 1A is set to 1.
  • FIG. 6 shows relative charge amounts at the center of the substrate in Example 1 and Reference Example 1B when the charge amount at the center of the substrate in Reference Example 1A is set to 1.
  • step S3 two fluids containing carbonated water and nitrogen gas in the form of mist in addition to ammonia water are discharged toward the upper surface of the rotating substrate, thereby discharging only ammonia water. It was shown that the charge amount of the substrate can be suppressed more than the case.
  • Example 2 a substrate having a thermal oxide film formed on its upper surface was prepared, then steps S1, S3, S5, and S6 shown in FIG. 3 were performed, and then the number of particles adhering to the upper surface of the substrate was measured. .
  • step S 3 two fluids containing carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43 .
  • the same carbonated water and ammonia water as in Example 1 were used.
  • a substrate was prepared under the same conditions as in Example 2, except that two fluids containing misted carbonated water and nitrogen gas were discharged from the nozzle 33 in step S3, and the carbonated water was discharged from the nozzle 43. processed.
  • FIG. 7 is a diagram showing the results of measuring the number of particles adhering to the top surfaces of the substrates processed in Example 2 and Reference Example 2.
  • FIG. FIG. 7 shows the relative number of particles in Example 2 when the number of particles in Reference Example 2 is 1.
  • FIG. 7 shows the relative number of particles in Example 2 when the number of particles in Reference Example 2 is 1.
  • step S3 two fluids including carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43. showed that adhesion of particles can be suppressed.

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Abstract

A substrate treatment apparatus according to an aspect of the present disclosure comprises: a holding part that rotatably holds a substrate; a first discharge part that discharges a first liquid which is weakly acidic and in mist form toward a treatment surface of the rotating substrate; and a second discharge part that discharges a second liquid which is weakly alkaline toward the treatment surface and forms a liquid film including the second liquid on the treatment surface.

Description

基板処理装置及び基板処理方法SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
　本開示は、基板処理装置及び基板処理方法に関する。 The present disclosure relates to a substrate processing apparatus and a substrate processing method.
　半導体デバイスの製造においては、種々の製造プロセスの前後で基板の洗浄が行われる。基板を洗浄する方法としては、回転する基板上に不活性ガスと純水との二流体を吐出しながら、該基板上に純水を供給して基板上に液膜を形成する技術が知られている（例えば、特許文献１参照）。 　In the manufacture of semiconductor devices, substrates are cleaned before and after various manufacturing processes. As a method for cleaning a substrate, there is known a technique of supplying pure water onto a rotating substrate while discharging two fluids of an inert gas and pure water onto the substrate to form a liquid film on the substrate. (See, for example, Patent Document 1).
特開２００３－２０３８９２号公報Japanese Patent Application Laid-Open No. 2003-203892
　本開示は、基板の帯電及びパーティクルの付着を抑制できる技術を提供する。 The present disclosure provides a technology capable of suppressing charging of the substrate and adhesion of particles.
　本開示の一態様による基板処理装置は、基板を回転可能に保持する保持部と、回転する前記基板の処理面に向けてミスト状にした弱酸性の第１液体を吐出する第１吐出部と、前記処理面に向けて弱アルカリ性の第２液体を吐出し、前記処理面に前記第２液体を含む液膜を形成する第２吐出部と、を備える。 A substrate processing apparatus according to one aspect of the present disclosure includes a holding unit that rotatably holds a substrate, and a first discharge unit that discharges a mist-like weakly acidic first liquid toward a processing surface of the rotating substrate. and a second ejection part for ejecting a weakly alkaline second liquid toward the processing surface to form a liquid film containing the second liquid on the processing surface.
　本開示によれば、基板の帯電及びパーティクルの付着を抑制できる。 According to the present disclosure, charging of the substrate and adhesion of particles can be suppressed.
図１は、実施形態に係る基板処理装置を示す平面図である。1 is a plan view showing a substrate processing apparatus according to an embodiment; FIG. 図２は、実施形態に係る基板処理装置の一部を示す断面図である。FIG. 2 is a cross-sectional view showing part of the substrate processing apparatus according to the embodiment. 図３は、実施形態に係る基板処理方法を示すフローチャートである。FIG. 3 is a flow chart showing the substrate processing method according to the embodiment. 図４Ａは、実施形態に係る基板処理方法を示す工程図である。FIG. 4A is a process chart showing the substrate processing method according to the embodiment. 図４Ｂは、実施形態に係る基板処理方法を示す工程図である。FIG. 4B is a process chart showing the substrate processing method according to the embodiment. 図４Ｃは、実施形態に係る基板処理方法を示す工程図である。FIG. 4C is a process chart showing the substrate processing method according to the embodiment. 図４Ｄは、実施形態に係る基板処理方法を示す工程図である。FIG. 4D is a process chart showing the substrate processing method according to the embodiment. 図５は、薬液のｐＨと基板の帯電量との関係を説明する図である。FIG. 5 is a diagram for explaining the relationship between the pH of the chemical solution and the amount of charge on the substrate. 図６は、基板の帯電量を測定した結果を示す図である。FIG. 6 is a diagram showing the results of measuring the charge amount of the substrate. 図７は、パーティクルの数を測定した結果を示す図である。FIG. 7 is a diagram showing the results of measuring the number of particles.
　以下、添付の図面を参照しながら、本開示の限定的でない例示の実施形態について説明する。添付の全図面中、同一又は対応する部材又は部品については、同一又は対応する参照符号を付し、重複する説明を省略する。 Non-limiting exemplary embodiments of the present disclosure will now be described with reference to the accompanying drawings. In all the attached drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and overlapping descriptions are omitted.
　〔基板処理装置〕
　図１及び図２を参照し、実施形態に係る基板処理装置１について説明する。基板処理装置１は、基板Ｗを一枚ずつ処理する枚葉式である。基板処理装置１は、基板Ｗの上面Ｗａに洗浄液を供給し、基板Ｗを洗浄する。基板Ｗは、例えば半導体ウエハであり、熱酸化膜（例えばＳｉＯ２）が露出した表面を有する。ただし、基板は、窒化膜（例えばＳｉ３Ｎ４）が露出した表面を有していてもよく、シリコン（Ｓｉ）が露出した表面を有していてもよい。 [Substrate processing equipment]
A substrate processing apparatus 1 according to an embodiment will be described with reference to FIGS. 1 and 2. FIG. The substrate processing apparatus 1 is of a single-wafer type that processes substrates W one by one. The substrate processing apparatus 1 supplies a cleaning liquid to the upper surface Wa of the substrate W to clean the substrate W. As shown in FIG. The substrate W is, for example, a semiconductor wafer, and has a surface on which a thermal oxide film (eg, SiO 2 ) is exposed. However, the substrate may have a surface on which a nitride film (eg, Si 3 N 4 ) is exposed, or may have a surface on which silicon (Si) is exposed.
　基板処理装置１は、処理容器１０、保持部２０、第１吐出部３０、第２吐出部４０、駆動部５０、カップ６０及び制御部９０を備える。 The substrate processing apparatus 1 includes a processing container 10 , a holding section 20 , a first discharge section 30 , a second discharge section 40 , a driving section 50 , a cup 60 and a control section 90 .
　処理容器１０は、保持部２０を内部に収容する。基板Ｗは、搬送装置（図示せず）によって処理容器１０の内部に搬入され、処理容器１０の内部において洗浄液で洗浄される。洗浄された基板Ｗは、搬送装置によって処理容器１０の外部に搬出される。 The processing container 10 accommodates the holding part 20 inside. The substrates W are carried into the processing container 10 by a transport device (not shown), and are cleaned with a cleaning liquid inside the processing container 10 . The cleaned substrate W is carried out of the processing container 10 by the transport device.
　保持部２０は、処理容器１０の内部において基板Ｗを水平に保持する。保持部２０は、例えば基板Ｗの下面Ｗｂの中心部を吸着保持する真空チャックである。保持部２０は、静電チャック、メカニカルチャック等であってもよい。保持部２０は、基板Ｗを保持した状態で、基板Ｗと共に回転軸線Ａｘを中心に回転可能に設けられる。保持部２０は、モータ等の回転駆動部２１によって回転される。すなわち、回転駆動部２１は、保持部２０に保持されている基板Ｗを、回転軸線Ａｘを中心に回転させる。 The holding part 20 horizontally holds the substrate W inside the processing container 10 . The holding unit 20 is, for example, a vacuum chuck that holds the central portion of the lower surface Wb of the substrate W by suction. The holding part 20 may be an electrostatic chuck, a mechanical chuck, or the like. The holding unit 20 is provided so as to be rotatable together with the substrate W around the rotation axis Ax while holding the substrate W. As shown in FIG. The holding portion 20 is rotated by a rotation driving portion 21 such as a motor. That is, the rotation driving section 21 rotates the substrate W held by the holding section 20 about the rotation axis Ax.
　第１吐出部３０は、保持部２０に保持されている基板Ｗの上面Ｗａに洗浄液を吐出する。第１吐出部３０は、液供給器３１、ガス供給器３２及びノズル３３を有する。 The first discharge section 30 discharges the cleaning liquid onto the upper surface Wa of the substrate W held by the holding section 20 . The first discharge section 30 has a liquid supplier 31 , a gas supplier 32 and a nozzle 33 .
　液供給器３１は、液供給源３１ａ、流量制御器３１ｂ、開閉弁３１ｃ及び供給ライン３１ｄを有する。液供給源３１ａは、供給ライン３１ｄに第１液体を送り出す。第１液体は、弱酸性の液体である。第１液体は、例えば水素イオン指数（ｐＨ）が４以上５以下の液体であってよい。第１液体としては、例えば炭酸水（ＣＯ２水）、オゾン水を利用できる。流量制御器３１ｂは、供給ライン３１ｄにおける液供給源３１ａと開閉弁３１ｃとの間に設けられ、供給ライン３１ｄを流れる第１液体の流量を調整する。開閉弁３１ｃは、供給ライン３１ｄにおける流量制御器３１ｂとノズル３３との間に設けられ、供給ライン３１ｄの流路を開閉する。 The liquid supplier 31 has a liquid supply source 31a, a flow controller 31b, an on-off valve 31c, and a supply line 31d. The liquid supply source 31a delivers the first liquid to the supply line 31d. The first liquid is a weakly acidic liquid. The first liquid may be a liquid having a hydrogen ion exponent (pH) of 4 or more and 5 or less, for example. As the first liquid, for example, carbonated water ( CO2 water) or ozone water can be used. The flow controller 31b is provided between the liquid supply source 31a and the on-off valve 31c in the supply line 31d, and adjusts the flow rate of the first liquid flowing through the supply line 31d. The on-off valve 31c is provided between the flow controller 31b and the nozzle 33 in the supply line 31d, and opens and closes the flow path of the supply line 31d.
　ガス供給器３２は、ガス供給源３２ａ、流量制御器３２ｂ、開閉弁３２ｃ及び供給ライン３２ｄを有する。ガス供給源３２ａは、供給ライン３２ｄにガスを送り出す。ガスは、窒素ガス等の不活性ガスである。流量制御器３２ｂは、供給ライン３２ｄにおけるガス供給源３２ａと開閉弁３２ｃとの間に設けられ、供給ライン３２ｄを流れるガスの流量を調整する。開閉弁３２ｃは、供給ライン３２ｄにおける流量制御器３２ｂとノズル３３との間に設けられ、供給ライン３２ｄの流路を開閉する。 The gas supplier 32 has a gas supply source 32a, a flow controller 32b, an on-off valve 32c and a supply line 32d. Gas supply source 32a delivers gas to supply line 32d. The gas is an inert gas such as nitrogen gas. The flow controller 32b is provided between the gas supply source 32a and the on-off valve 32c in the supply line 32d, and adjusts the flow rate of the gas flowing through the supply line 32d. The on-off valve 32c is provided between the flow controller 32b and the nozzle 33 in the supply line 32d, and opens and closes the flow path of the supply line 32d.
　ノズル３３は、吐出口３３ａを下に向けて基板Ｗの上方に配置される。ノズル３３は、吐出口３３ａから保持部２０に保持されている基板Ｗの上面Ｗａに向けて第１洗浄液を吐出する。ノズル３３は、液供給源３１ａから供給ライン３１ｄを介して供給される第１液体と、ガス供給源３２ａから供給ライン３２ｄを介して供給されるガスとを合流させて吐出する。第１液体は、ガスによってミスト状にされ、回転する基板Ｗの上面Ｗａに向けて吐出される。すなわち、ノズル３３は、ガスの流れに第１液体を合流させることにより第１液体をミスト状にし、ミスト状にした第１液体とガスとを含む二流体を、回転する基板Ｗの上面Ｗａに向けて吐出する二流体ノズルである。ただし、ノズル３３は、ミスト状にした第１液体を吐出できればよく、二流体ノズルに限定されない。 The nozzle 33 is arranged above the substrate W with the discharge port 33a facing downward. The nozzle 33 ejects the first cleaning liquid from the ejection port 33a toward the upper surface Wa of the substrate W held by the holding unit 20 . The nozzle 33 merges the first liquid supplied from the liquid supply source 31a through the supply line 31d and the gas supplied from the gas supply source 32a through the supply line 32d, and discharges them. The first liquid is misted by the gas and discharged toward the upper surface Wa of the rotating substrate W. As shown in FIG. That is, the nozzle 33 merges the first liquid with the flow of gas to make the first liquid into mist, and sprays the two fluids containing the mist-shaped first liquid and gas onto the upper surface Wa of the rotating substrate W. It is a two-fluid nozzle that discharges toward the target. However, the nozzle 33 is not limited to a two-fluid nozzle as long as it can eject the mist-like first liquid.
　第２吐出部４０は、保持部２０に保持されている基板Ｗの上面Ｗａに第２液体を吐出する。第２吐出部４０は、液供給器４１及びノズル４３を有する。 The second ejection section 40 ejects the second liquid onto the upper surface Wa of the substrate W held by the holding section 20 . The second discharge section 40 has a liquid supplier 41 and a nozzle 43 .
　液供給器４１は、液供給源４１ａ、流量制御器４１ｂ、開閉弁４１ｃ及び供給ライン４１ｄを有する。液供給源４１ａは、供給ライン４１ｄに第２液体を送り出す。第２液体は、弱アルカリ性の液体である。第２液体は、例えばｐＨが８以上１０以下の液体であってよい。第２液体としては、例えばアンモニア水（ＮＨ４ＯＨ）を利用できる。流量制御器４１ｂは、供給ライン４１ｄにおける液供給源４１ａと開閉弁４１ｃとの間に設けられ、供給ライン４１ｄを流れる第２液体の流量を調整する。開閉弁４１ｃは、供給ライン４１ｄにおける流量制御器４１ｂとノズル４３との間に設けられ、供給ライン４１ｄの流路を開閉する。 The liquid supplier 41 has a liquid supply source 41a, a flow controller 41b, an on-off valve 41c, and a supply line 41d. The liquid supply source 41a delivers the second liquid to the supply line 41d. The second liquid is a weakly alkaline liquid. The second liquid may be a liquid with a pH of 8 or more and 10 or less, for example. For example, aqueous ammonia (NH 4 OH) can be used as the second liquid. The flow controller 41b is provided between the liquid supply source 41a and the on-off valve 41c in the supply line 41d, and adjusts the flow rate of the second liquid flowing through the supply line 41d. The on-off valve 41c is provided between the flow controller 41b and the nozzle 43 in the supply line 41d, and opens and closes the flow path of the supply line 41d.
　ノズル４３は、吐出口４３ａを斜め下に向けて基板Ｗの上方に配置される。ノズル４３は、吐出口４３ａから保持部２０に保持されている基板Ｗの上面Ｗａに向けて第２液体を吐出する。第２液体は、第１液体とは異なり、ミスト状ではなく束状で吐出される。第２液体は、回転する基板Ｗの上面Ｗａに供給され、遠心力によって基板Ｗの上面Ｗａ全体に濡れ広がり、液膜を形成する。すなわち、ノズル４３は、基板Ｗの上面Ｗａに向けて第２液体を吐出し、基板Ｗの上面Ｗａに第２液体を含む液膜を形成する。 The nozzle 43 is arranged above the substrate W with the discharge port 43a directed obliquely downward. The nozzle 43 ejects the second liquid from the ejection port 43a toward the upper surface Wa of the substrate W held by the holder 20 . Unlike the first liquid, the second liquid is discharged in the form of bundles rather than in the form of mist. The second liquid is supplied to the upper surface Wa of the rotating substrate W, and spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film. That is, the nozzle 43 ejects the second liquid toward the upper surface Wa of the substrate W to form a liquid film containing the second liquid on the upper surface Wa of the substrate W. As shown in FIG.
　駆動部５０は、ノズル３３及びノズル４３を基板Ｗの径方向を含む方向に移動させる。駆動部５０は、ガイドレール５１、第１駆動部５２及び第２駆動部５３を有する。 The drive unit 50 moves the nozzles 33 and 43 in directions including the radial direction of the substrate W. The drive section 50 has a guide rail 51 , a first drive section 52 and a second drive section 53 .
　ガイドレール５１は、処理容器１０の内部において水平方向（Ｘ方向）に延び、処理容器１０の内部に固定される。 The guide rail 51 extends in the horizontal direction (X direction) inside the processing container 10 and is fixed inside the processing container 10 .
　第１駆動部５２は、移動部５２ａ及びアーム５２ｂを有する。移動部５２ａは、ガイドレール５１に沿って水平方向（Ｘ方向）に移動する。アーム５２ｂは、水平方向（Ｘ方向と直交するＹ方向）及び上下方向（Ｚ方向）の各々に伸縮する。これにより、第１駆動部５２は、Ｘ軸方向、Ｙ軸方向及びＺ軸方向にノズル３３を移動させることができる。 The first driving section 52 has a moving section 52a and an arm 52b. The moving part 52a moves in the horizontal direction (X direction) along the guide rail 51. As shown in FIG. The arm 52b expands and contracts in each of the horizontal direction (the Y direction perpendicular to the X direction) and the vertical direction (the Z direction). Thereby, the first drive unit 52 can move the nozzle 33 in the X-axis direction, the Y-axis direction, and the Z-axis direction.
　第２駆動部５３は、移動部５３ａ及びアーム５３ｂを有する。移動部５３ａは、ガイドレール５１に沿って水平方向（Ｘ方向）に移動する。アーム５３ｂは、水平方向（Ｘ方向と直交するＹ方向）及び上下方向（Ｚ方向）の各々に伸縮する。これにより、第２駆動部５３は、Ｘ軸方向、Ｙ軸方向及びＺ軸方向にノズル４３を移動させることができる。 The second driving section 53 has a moving section 53a and an arm 53b. The moving part 53a moves in the horizontal direction (X direction) along the guide rail 51. As shown in FIG. The arm 53b extends and contracts in each of the horizontal direction (the Y direction orthogonal to the X direction) and the vertical direction (the Z direction). Thereby, the second drive unit 53 can move the nozzle 43 in the X-axis direction, the Y-axis direction, and the Z-axis direction.
　カップ６０は、処理容器１０の内部に設けられる。カップ６０は、保持部２０に保持されている基板Ｗの周縁を囲むように設けられる。カップ６０は、円環状の平面形状を有する１又は複数のカップ体を含む。各カップ体は、上方及び下方が開口した筒状の形状を有し、各カップ体の内側に保持部２０に保持されている基板Ｗが配置される。カップ６０は、基板Ｗから飛散する液（例えば、洗浄液、第２液体）を受け止める。 The cup 60 is provided inside the processing container 10 . The cup 60 is provided so as to surround the periphery of the substrate W held by the holding portion 20 . The cup 60 includes one or more cup bodies having an annular planar shape. Each cup has a cylindrical shape with an upper and a lower opening, and the substrate W held by the holder 20 is arranged inside each cup. The cup 60 receives liquid (for example, cleaning liquid, second liquid) that scatters from the substrate W. As shown in FIG.
　制御部９０は、例えばコンピュータであり、ＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）９１と、メモリ等の記憶媒体９２を備える。記憶媒体９２には、基板処理装置１において実行される各種の処理を制御するプログラムが格納される。制御部９０は、記憶媒体９２に記憶されたプログラムをＣＰＵ９１に実行させることにより、基板処理装置１の動作を制御する。 The control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1 . The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute programs stored in the storage medium 92 .
　なお、図１及び図２の例では、基板処理装置１が２つの吐出部（第１吐出部３０及び第２吐出部４０）を備える場合を示したが、更に１つ又は２つ以上の別の吐出部を備えていてもよい。別の吐出部は、例えば第２吐出部４０と同様に、基板Ｗの上面Ｗａに向けて液体を吐出する吐出部を含んでよい。該液体は、第２液体と同じ液体であってもよく、第２液体と異なる液体（例えば乾燥液）であってもよい。乾燥液としては、例えばＩＰＡ（イソプロピルアルコール）等の有機溶剤が挙げられる。 In the examples of FIGS. 1 and 2, the substrate processing apparatus 1 includes two ejection units (the first ejection unit 30 and the second ejection unit 40). may be provided with a discharge part. Another ejection part may include, for example, an ejection part that ejects liquid toward the upper surface Wa of the substrate W, like the second ejection part 40 . The liquid may be the same liquid as the second liquid, or may be a liquid different from the second liquid (for example, a dry liquid). Examples of the drying liquid include organic solvents such as IPA (isopropyl alcohol).
　また、基板処理装置１は、保持部２０に保持されている基板Ｗの下面Ｗｂを洗浄するための下面洗浄ユニット（図示せず）を備えていてもよい。下面洗浄ユニットは、例えば基板Ｗの下面Ｗｂに押し当てられるブラシ、スポンジ等の洗浄体と、洗浄液を吐出するノズルと、洗浄体及びノズルを移動させる駆動部とを備える。下面洗浄ユニットは、駆動部が洗浄体及びノズルを移動させて、基板Ｗの下面Ｗｂに洗浄液を供給しながら洗浄体を押し当てることにより基板Ｗの下面Ｗｂを洗浄する。 The substrate processing apparatus 1 may also include a bottom surface cleaning unit (not shown) for cleaning the bottom surface Wb of the substrate W held by the holding part 20 . The bottom surface cleaning unit includes, for example, a cleaning body such as a brush or sponge that is pressed against the bottom surface Wb of the substrate W, a nozzle that discharges cleaning liquid, and a driving section that moves the cleaning body and the nozzle. The lower surface cleaning unit cleans the lower surface Wb of the substrate W by moving the cleaning body and the nozzle with the drive section and pressing the cleaning body against the lower surface Wb of the substrate W while supplying the cleaning liquid to the lower surface Wb.
　また、基板Ｗの下面Ｗｂの中心部以外の箇所を保持可能な１又は複数の吸着パッド（図示せず）が設けられてもよい。基板Ｗを吸着パッドにより保持している間に、基板Ｗの下面Ｗｂのうち保持部２０が接触する箇所（すなわち中心部）を洗浄できる。一方、基板Ｗを保持部２０により保持している間に、基板Ｗの下面のうち吸着パッドが接触する箇所を洗浄できる。 Also, one or more suction pads (not shown) capable of holding a portion other than the central portion of the lower surface Wb of the substrate W may be provided. While the substrate W is being held by the suction pads, the portion of the lower surface Wb of the substrate W that the holding portion 20 contacts (that is, the central portion) can be cleaned. On the other hand, while the substrate W is being held by the holding portion 20, it is possible to clean the portion of the bottom surface of the substrate W that the suction pads come into contact with.
　また、保持部２０の周囲には複数（例えば３つ）の昇降ピン（図示せず）が設けられてもよい。昇降ピンは、昇降機構（図示せず）により昇降可能に設けられる。これにより、昇降ピンと、処理容器１０の外部に設けられる搬送装置（図示せず）との間で、基板Ｗの受け渡しを行うことができる。また、昇降ピンと、保持部２０又は上述の吸着パッドとの間で、基板Ｗの受け渡しを行うことができる。 Also, a plurality of (for example, three) lifting pins (not shown) may be provided around the holding portion 20 . The lifting pin is provided so as to be liftable by a lifting mechanism (not shown). Thereby, the substrate W can be transferred between the lifting pins and a transfer device (not shown) provided outside the processing container 10 . In addition, the substrate W can be transferred between the lifting pins and the holding section 20 or the suction pad described above.
　〔基板処理方法〕
　図３、図４Ａ、図４Ｂ、図４Ｃ及び図４Ｄを参照し、実施形態に係る基板処理装置１において実施される基板処理方法の一例について説明する。基板処理方法は、制御部９０が基板処理装置１の各部を制御することにより実施される。 [Substrate processing method]
An example of a substrate processing method performed in the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 3, 4A, 4B, 4C, and 4D. The substrate processing method is carried out by controlling each unit of the substrate processing apparatus 1 by the control unit 90 .
　まず、搬送装置（図示せず）が、基板Ｗを処理容器１０の内部に搬入する（ステップＳ１）。搬送装置は、保持部２０に基板Ｗを載置した後、処理容器１０の内部から退出する。保持部２０は、基板Ｗを保持する。その後、回転駆動部２１が保持部２０と共に基板Ｗを回転させる。 First, a transport device (not shown) loads the substrate W into the processing container 10 (step S1). After placing the substrate W on the holding unit 20 , the transport device exits from the inside of the processing container 10 . The holding part 20 holds the substrate W. As shown in FIG. After that, the rotation driving section 21 rotates the substrate W together with the holding section 20 .
　次に、図４Ａに示されるように、ノズル４３が、回転している基板Ｗの上面Ｗａに向けて第２液体Ｌ２を吐出する（ステップＳ２）。第２液体Ｌ２は、遠心力によって基板Ｗの上面Ｗａ全体に濡れ広がり、液膜を形成する。 Next, as shown in FIG. 4A, the nozzle 43 ejects the second liquid L2 toward the upper surface Wa of the rotating substrate W (step S2). The second liquid L2 spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film.
　次に、図４Ｂに示されるように、ノズル３３が、回転している基板Ｗの上面Ｗａに向けてミスト状にした弱酸性の第１液体Ｌ１を吐出し、かつ、ノズル４３が、回転している基板Ｗの上面Ｗａに向けて弱アルカリ性の第２液体Ｌ２を吐出する（ステップＳ３）。ミスト状にした弱酸性の第１液体Ｌ１は、基板Ｗの上面Ｗａに作用して基板Ｗの上面Ｗａを洗浄し、かつ基板Ｗの帯電を抑制する。基板Ｗの帯電が抑制される理由については後述する。弱アルカリ性の第２液体Ｌ２を用いるとパーティクルの付着を抑制できるが、基板Ｗの帯電量が増える。そこで、弱アルカリ性の第２液体Ｌ２に加えて、弱酸性の第１液体Ｌ１も用いることで、基板Ｗの帯電量を減らすことができる。すなわち、基板Ｗの上面Ｗａへのパーティクルの付着を抑制しつつ、基板Ｗの帯電量を減らすことができる。 Next, as shown in FIG. 4B, the nozzle 33 ejects the mist-like weakly acidic first liquid L1 toward the upper surface Wa of the rotating substrate W, and the nozzle 43 rotates. The weakly alkaline second liquid L2 is discharged toward the upper surface Wa of the substrate W (step S3). The mist-like weakly acidic first liquid L1 acts on the upper surface Wa of the substrate W to clean the upper surface Wa of the substrate W and suppress the substrate W from being charged. The reason why charging of the substrate W is suppressed will be described later. Adhesion of particles can be suppressed by using the weakly alkaline second liquid L2, but the amount of charge on the substrate W increases. Therefore, the amount of charge on the substrate W can be reduced by using the weakly acidic first liquid L1 in addition to the weakly alkaline second liquid L2. That is, the amount of charge on the substrate W can be reduced while suppressing the adhesion of particles to the upper surface Wa of the substrate W.
　ノズル３３からミスト状にした第１液体Ｌ１を吐出する際には、第１液体Ｌ１及びガスがそれぞれ供給ライン３１ｄ，３２ｄを流れる際にパーティクルを発生させ、パーティクルと共にノズル３３から吐出される場合がある。また、ノズル３３から吐出されるミスト状にした第１液体Ｌ１は、カップ６０の内壁面に付着したパーティクルをまき散らす場合がある。この場合、基板Ｗの上面Ｗａが露出していると露出面にパーティクルが付着するが、実施形態では第１液体Ｌ１と第２液体Ｌ２を同時に吐出するので、前述したように基板Ｗの上面Ｗａが第２液体Ｌ２の液膜に覆われている。そのため、基板Ｗの上面Ｗａへのパーティクルの付着をより抑制できる。弱酸性の第１液体Ｌ１と弱アルカリ性の第２液体Ｌ２を同時に吐出する場合、中和反応により塩が生成される。塩が析出しないように、第１液体Ｌ１と第２液体Ｌ２の組み合わせとしては、第１液体Ｌ１が炭酸水又はオゾン水であって第２液体Ｌ２がアンモニア水であることが好ましい。塩の析出を抑制することで、パーティクルの発生を抑制できる。 When ejecting the mist-like first liquid L1 from the nozzle 33, particles may be generated when the first liquid L1 and the gas flow through the supply lines 31d and 32d, respectively, and may be ejected from the nozzle 33 together with the particles. be. In addition, the mist-like first liquid L<b>1 ejected from the nozzle 33 may scatter particles adhering to the inner wall surface of the cup 60 . In this case, if the upper surface Wa of the substrate W is exposed, particles will adhere to the exposed surface. is covered with the liquid film of the second liquid L2. Therefore, adhesion of particles to the upper surface Wa of the substrate W can be further suppressed. When the weakly acidic first liquid L1 and the weakly alkaline second liquid L2 are discharged at the same time, a salt is generated by the neutralization reaction. As for the combination of the first liquid L1 and the second liquid L2, it is preferable that the first liquid L1 is carbonated water or ozone water and the second liquid L2 is ammonia water so as not to precipitate salts. By suppressing precipitation of salts, generation of particles can be suppressed.
　ステップＳ３では、ノズル３３が、基板Ｗの径方向に移動しながら基板Ｗの上面Ｗａに向けてミスト状にした第１液体Ｌ１を吐出する。ノズル３３は、基板Ｗの中心から周縁に向かって移動してもよく、基板Ｗの周縁から中心に向かって移動してもよい。ノズル３３は、基板Ｗの中心と周縁との間で往復移動してもよい。ノズル３３を基板Ｗの径方向に移動することで、ミスト状にした第１液体Ｌ１で基板Ｗの径方向全体を洗浄できる。なお、ノズル３３は、移動することなく基板Ｗの上面Ｗａに向けてミスト状にした第１液体Ｌ１を吐出してもよい。 In step S3, the nozzle 33 ejects the mist-like first liquid L1 toward the upper surface Wa of the substrate W while moving in the radial direction of the substrate W. The nozzle 33 may move from the center of the substrate W toward the periphery, or may move from the periphery of the substrate W toward the center. The nozzle 33 may reciprocate between the center of the substrate W and the periphery. By moving the nozzle 33 in the radial direction of the substrate W, the entire radial direction of the substrate W can be cleaned with the mist-like first liquid L1. The nozzle 33 may eject the mist-like first liquid L1 toward the upper surface Wa of the substrate W without moving.
　ステップＳ３では、ノズル４３が、移動することなく基板Ｗの中心に第２液体Ｌ２を吐出する。遠心力によって第２液体Ｌ２を基板Ｗの径方向全体に広げることができ、基板Ｗの径方向全体を第２液体Ｌ２の液膜で覆うことができる。ただし、ノズル４３は、基板Ｗの径方向に移動しながら基板Ｗの上面Ｗａに向けて第２液体Ｌ２を吐出してもよい。 In step S3, the nozzle 43 ejects the second liquid L2 to the center of the substrate W without moving. The centrifugal force can spread the second liquid L2 over the entire radial direction of the substrate W, and the entire radial direction of the substrate W can be covered with the liquid film of the second liquid L2. However, the nozzle 43 may discharge the second liquid L2 toward the upper surface Wa of the substrate W while moving in the radial direction of the substrate W. FIG.
　次に、図４Ｃに示されるように、ノズル３３が第１液体Ｌ１の吐出を停止すると共に、ノズル４３が、回転している基板Ｗの上面Ｗａに向けて第２液体Ｌ２を吐出する（ステップＳ４）。第２液体Ｌ２は、遠心力によって基板Ｗの上面Ｗａ全体に濡れ広がり、液膜を形成する。 Next, as shown in FIG. 4C, the nozzles 33 stop discharging the first liquid L1, and the nozzles 43 discharge the second liquid L2 toward the upper surface Wa of the rotating substrate W (step S4). The second liquid L2 spreads over the entire upper surface Wa of the substrate W by centrifugal force to form a liquid film.
　次に、図４Ｄに示されるように、ノズル３３からの第１液体Ｌ１の吐出及びノズル４３からの第２液体Ｌ２の吐出を停止した状態で、回転駆動部２１が基板Ｗを回転させ、基板Ｗの上面に残る第２液体Ｌ２を振り切り、基板Ｗを乾燥させる（ステップＳ５）。基板Ｗを乾燥させた後、回転駆動部２１が基板Ｗの回転を停止する。なお、ステップＳ５では、図示しないノズルが、回転している基板Ｗの上面Ｗａに乾燥液を供給してもよい。乾燥液は、遠心力によって基板Ｗの上面Ｗａ全体に濡れ広がり、基板Ｗの上面Ｗａに残る第２液体Ｌ２を洗い流す。その結果、基板Ｗの上面Ｗａに、乾燥液の液膜が形成される。乾燥液の液膜は基板Ｗの回転により基板Ｗの上面Ｗａから振り切られ、基板Ｗが乾燥する。 Next, as shown in FIG. 4D, in a state in which ejection of the first liquid L1 from the nozzles 33 and ejection of the second liquid L2 from the nozzles 43 are stopped, the rotation driving unit 21 rotates the substrate W to The second liquid L2 remaining on the upper surface of W is shaken off, and the substrate W is dried (step S5). After drying the substrate W, the rotation driving unit 21 stops rotating the substrate W. As shown in FIG. In step S5, a nozzle (not shown) may supply the drying liquid to the upper surface Wa of the substrate W that is rotating. The dry liquid spreads over the entire upper surface Wa of the substrate W due to centrifugal force, and washes away the second liquid L2 remaining on the upper surface Wa of the substrate W. As shown in FIG. As a result, a liquid film of the drying liquid is formed on the upper surface Wa of the substrate W. As shown in FIG. The liquid film of the drying liquid is shaken off from the upper surface Wa of the substrate W by the rotation of the substrate W, and the substrate W is dried.
　最後に、保持部２０が基板Ｗの保持を解除し、続いて搬送装置が保持部２０から基板Ｗを受け取り、受け取った基板Ｗを処理容器１０の外部に搬出する（ステップＳ６）。その後、処理が終了する。 Finally, the holding unit 20 releases the holding of the substrate W, then the transport device receives the substrate W from the holding unit 20, and carries the received substrate W out of the processing container 10 (step S6). After that, the process ends.
　なお、実施形態に係る基板処理方法では、ステップＳ３において、基板Ｗの上面Ｗａに向けてミスト状にした第１液体Ｌ１と第２液体Ｌ２とを同時に吐出する場合を説明したが、これに限定されない。ステップＳ３において、ミスト状にした第１液体Ｌ１と第２液体Ｌ２とを順番に吐出してもよい。例えば、まず第２液体Ｌ２を吐出することなくミスト状にした第１液体Ｌ１を吐出し、次いでミスト状にした第１液体Ｌ１を吐出することなく第２液体Ｌ２を吐出するようにしてもよい。例えば、まずミスト状にした第１液体Ｌ１を吐出することなく第２液体Ｌ２を吐出し、次いで第２液体Ｌ２を吐出することなくミスト状にした第１液体Ｌ１を吐出するようにしてもよい。また、ミスト状にした第１液体Ｌ１と第２液体Ｌ２とを交互に繰り返し吐出するようにしてもよい。ただし、処理時間を短縮するという観点から、ミスト状にした第１液体Ｌ１と第２液体Ｌ２とを同時に吐出することが好ましい。 In the substrate processing method according to the embodiment, in step S3, the first liquid L1 and the second liquid L2 are simultaneously ejected toward the upper surface Wa of the substrate W. However, the present invention is limited to this. not. In step S3, the mist-like first liquid L1 and second liquid L2 may be discharged in order. For example, first, the mist-like first liquid L1 may be ejected without ejecting the second liquid L2, and then the second liquid L2 may be ejected without ejecting the mist-like first liquid L1. . For example, first, the second liquid L2 may be ejected without ejecting the mist-like first liquid L1, and then the mist-like first liquid L1 may be ejected without ejecting the second liquid L2. . Further, the mist-like first liquid L1 and the second liquid L2 may be alternately and repeatedly ejected. However, from the viewpoint of shortening the processing time, it is preferable to simultaneously eject the mist-like first liquid L1 and the second liquid L2.
　また、実施形態に係る基板処理方法は、下面洗浄ユニット（図示せず）が、保持部２０に保持されている基板Ｗの下面Ｗｂを洗浄するステップを有していてもよい。該ステップは、例えばステップＳ２を実施する前、ステップＳ２と同時及びステップＳ３と同時の少なくとも１つ以上のタイミングに実施してよい。下面洗浄ユニットは、駆動部が洗浄体及びノズルを移動させて、基板Ｗの下面Ｗｂに洗浄液を供給しながら洗浄体を押し当てることにより基板Ｗの下面Ｗｂを洗浄する。 Further, the substrate processing method according to the embodiment may have a step of cleaning the lower surface Wb of the substrate W held by the holding part 20 by a lower surface cleaning unit (not shown). This step may be performed at least one timing before step S2, at the same time as step S2, and at the same time as step S3, for example. The lower surface cleaning unit cleans the lower surface Wb of the substrate W by moving the cleaning body and the nozzle with the drive section and pressing the cleaning body against the lower surface Wb of the substrate W while supplying the cleaning liquid to the lower surface Wb.
　図５を参照し、ミスト状にした弱酸性の第１液体Ｌ１が基板Ｗの帯電を抑制できる理由を説明する。基板Ｗの帯電は、基板Ｗの処理面に供給される洗浄液のｐＨと、処理面の等電点とに基づいて決まる。洗浄液のｐＨが処理面の等電点よりも小さい場合、基板Ｗは正（＋）に帯電しやすく、洗浄液のｐＨと処理面の等電点との差が大きいほど正の帯電量が大きくなる。一方、洗浄液のｐＨが処理面の等電点よりも大きい場合、基板Ｗは負（－）に帯電しやすく、薬液のｐＨと処理面の等電点との差が大きいほど負の帯電量が大きくなる。 The reason why the mist-like weakly acidic first liquid L1 can suppress charging of the substrate W will be described with reference to FIG. The charging of the substrate W is determined based on the pH of the cleaning liquid supplied to the processing surface of the substrate W and the isoelectric point of the processing surface. When the pH of the cleaning liquid is lower than the isoelectric point of the processing surface, the substrate W tends to be positively (+) charged, and the greater the difference between the pH of the cleaning liquid and the isoelectric point of the processing surface, the greater the amount of positive charge. . On the other hand, when the pH of the cleaning solution is higher than the isoelectric point of the surface to be treated, the substrate W tends to be negatively (-) charged. growing.
　基板Ｗの処理面の一例である熱酸化膜は、等電点（ｐＨ）が１．５～３．７である。第１液体Ｌ１の一例である炭酸水は、弱酸性を有し、例えばｐＨが４．５である。第２液体Ｌ２の一例であるアンモニア水は、弱アルカリ性を有し、例えばｐＨが９．７である。すなわち、炭酸水のｐＨと熱酸化膜の等電点との差は、アンモニア水のｐＨと熱酸化膜の等電点との差よりも小さい。そのため、炭酸水を熱酸化膜に供給することにより、アンモニア水を熱酸化膜に供給するよりも基板Ｗの帯電を抑制できると考えられる。また、炭酸水のｐＨと熱酸化膜の等電点との差は、純水のｐＨ（ｐＨ＝７．０）と熱酸化膜の等電点との差よりも小さい。そのため、炭酸水を熱酸化膜に供給することにより、純水を熱酸化膜に供給するよりも基板Ｗの帯電を抑制できると考えられる。 A thermal oxide film, which is an example of the processing surface of the substrate W, has an isoelectric point (pH) of 1.5 to 3.7. Carbonated water, which is an example of the first liquid L1, is weakly acidic, and has a pH of 4.5, for example. Ammonia water, which is an example of the second liquid L2, is weakly alkaline and has a pH of 9.7, for example. That is, the difference between the pH of carbonated water and the isoelectric point of the thermal oxide film is smaller than the difference between the pH of ammonia water and the isoelectric point of the thermal oxide film. Therefore, it is considered that charging of the substrate W can be suppressed more effectively by supplying carbonated water to the thermal oxide film than by supplying ammonia water to the thermal oxide film. Also, the difference between the pH of carbonated water and the isoelectric point of the thermal oxide film is smaller than the difference between the pH of pure water (pH=7.0) and the isoelectric point of the thermal oxide film. Therefore, it is considered that charging of the substrate W can be suppressed more effectively by supplying carbonated water to the thermal oxide film than by supplying pure water to the thermal oxide film.
　〔実施例〕
　実施形態の効果を確認するために行った実施例について説明する。 〔Example〕
An example conducted to confirm the effect of the embodiment will be described.
　実施例１では、熱酸化膜が上面に形成された基板を準備し、次いで図３に示されるステップＳ１、Ｓ３、Ｓ５、Ｓ６を実施し、次いで基板の帯電量を測定した。ステップＳ３では、回転している基板の上面に向けて、ノズル３３からミスト状にした炭酸水と窒素ガスとを含む二流体を吐出し、かつノズル４３からアンモニア水を吐出した。炭酸水とアンモニア水とは、比抵抗が同程度のものを用いた。具体的には、炭酸水としては比抵抗が０．０６ＭΩ・ｃｍのものを用い、アンモニア水としては比抵抗が０．０６７ＭΩ・ｃｍのものを用いた。 In Example 1, a substrate having a thermal oxide film formed on its upper surface was prepared, then steps S1, S3, S5, and S6 shown in FIG. 3 were performed, and then the charge amount of the substrate was measured. In step S 3 , two fluids containing carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43 . The carbonated water and the ammonia water used had similar specific resistances. Specifically, carbonated water with a specific resistance of 0.06 MΩ·cm was used, and ammonia water with a specific resistance of 0.067 MΩ·cm was used.
　参考例１Ａでは、ステップＳ３においてノズル３３からミスト状にした炭酸水と窒素ガスとを含む二流体を吐出し、かつノズル４３から炭酸水を吐出したこと以外、実施例１と同じ条件で、基板を処理した。 In Reference Example 1A, the substrate was prepared under the same conditions as in Example 1, except that two fluids containing carbonated water and nitrogen gas in the form of mist were discharged from the nozzle 33 in step S3, and the carbonated water was discharged from the nozzle 43. processed.
　参考例１Ｂでは、ステップＳ３においてノズル３３及びノズル４３からアンモニア水を吐出したこと以外、実施例１と同じ条件で、基板を処理した。 In Reference Example 1B, the substrate was processed under the same conditions as in Example 1, except that ammonia water was discharged from the nozzles 33 and 43 in step S3.
　図６は、実施例１、参考例１Ａ及び参考例１Ｂで処理した基板の中心における負の帯電量（＞０）を測定した結果を示す図である。図６においては、参考例１Ａにおける基板の中心の帯電量を１とした場合の実施例１及び参考例１Ｂにおける基板の中心の帯電量を相対的に示している。 FIG. 6 is a diagram showing the results of measuring the amount of negative charge (>0) at the center of the substrates treated in Example 1, Reference Examples 1A and 1B. FIG. 6 shows relative charge amounts at the center of the substrate in Example 1 and Reference Example 1B when the charge amount at the center of the substrate in Reference Example 1A is set to 1. In FIG.
　図６に示されるように、参考例１Ｂでは基板の中心の帯電量が参考例１Ａの約７．５倍に増加しているのに対し、実施例１では基板の中心の帯電量は小さく、参考例１Ａと略同じであることが分かる。この結果から、ステップＳ３において、回転している基板の上面に向けて、アンモニア水に加えてミスト状にした炭酸水と窒素ガスとを含む二流体を吐出することにより、アンモニア水のみを吐出する場合よりも基板の帯電量を抑制できることが示された。 As shown in FIG. 6, in Reference Example 1B, the charge amount at the center of the substrate was increased to about 7.5 times that of Reference Example 1A, whereas in Example 1, the charge amount at the center of the substrate was small, It can be seen that it is substantially the same as Reference Example 1A. Based on this result, in step S3, two fluids containing carbonated water and nitrogen gas in the form of mist in addition to ammonia water are discharged toward the upper surface of the rotating substrate, thereby discharging only ammonia water. It was shown that the charge amount of the substrate can be suppressed more than the case.
　実施例２では、熱酸化膜が上面に形成された基板を準備し、次いで図３に示されるステップＳ１、Ｓ３、Ｓ５、Ｓ６を実施し、次いで基板の上面に付着したパーティクルの数を測定した。ステップＳ３では、回転している基板の上面に向けて、ノズル３３からミスト状にした炭酸水と窒素ガスとを含む二流体を吐出し、かつノズル４３からアンモニア水を吐出した。炭酸水及びアンモニア水は、実施例１と同じものを用いた。 In Example 2, a substrate having a thermal oxide film formed on its upper surface was prepared, then steps S1, S3, S5, and S6 shown in FIG. 3 were performed, and then the number of particles adhering to the upper surface of the substrate was measured. . In step S 3 , two fluids containing carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43 . The same carbonated water and ammonia water as in Example 1 were used.
　参考例２では、ステップＳ３においてノズル３３からミスト状にした炭酸水と窒素ガスとを含む二流体を吐出し、かつノズル４３から炭酸水を吐出したこと以外、実施例２と同じ条件で、基板を処理した。 In Reference Example 2, a substrate was prepared under the same conditions as in Example 2, except that two fluids containing misted carbonated water and nitrogen gas were discharged from the nozzle 33 in step S3, and the carbonated water was discharged from the nozzle 43. processed.
　図７は、実施例２及び参考例２で処理した基板の上面に付着したパーティクルの数を測定した結果を示す図である。図７においては、参考例２におけるパーティクルの数を１とした場合の実施例２におけるパーティクルの数を相対的に示している。 FIG. 7 is a diagram showing the results of measuring the number of particles adhering to the top surfaces of the substrates processed in Example 2 and Reference Example 2. FIG. FIG. 7 shows the relative number of particles in Example 2 when the number of particles in Reference Example 2 is 1. In FIG.
　図７に示されるように、実施例２ではパーティクルの数が参考例２の０．４４倍であることが分かる。この結果から、ステップＳ３において、回転している基板の上面に向けて、ノズル３３からミスト状にした炭酸水と窒素ガスとを含む二流体を吐出し、かつノズル４３からアンモニア水を吐出することにより、パーティクルの付着を抑制できることが示された。 As shown in FIG. 7, it can be seen that the number of particles in Example 2 is 0.44 times that of Reference Example 2. Based on this result, in step S3, two fluids including carbonated water and nitrogen gas in the form of mist are discharged from the nozzle 33 toward the upper surface of the rotating substrate, and ammonia water is discharged from the nozzle 43. showed that adhesion of particles can be suppressed.
　今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time should be considered illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted or modified in various ways without departing from the scope and spirit of the appended claims.
　本国際出願は、２０２１年１１月８日に出願した日本国特許出願第２０２１－１８２０３５号に基づく優先権を主張するものであり、当該出願の全内容を本国際出願に援用する。 This international application claims priority based on Japanese Patent Application No. 2021-182035 filed on November 8, 2021, and the entire content of that application is incorporated into this international application.
　１　　基板処理装置
　２０　保持部
　３０　第１吐出部
　４０　第２吐出部
　Ｌ１　第１液体
　Ｌ２　第２液体
　Ｗ　　基板
　Ｗａ　上面 Reference Signs List 1 substrate processing apparatus 20 holding section 30 first discharge section 40 second discharge section L1 first liquid L2 second liquid W substrate Wa upper surface

Claims (12)

  1. 　基板を回転可能に保持する保持部と、
    　回転する前記基板の処理面に向けてミスト状にした弱酸性の第１液体を吐出する第１吐出部と、
    　前記処理面に向けて弱アルカリ性の第２液体を吐出し、前記処理面に前記第２液体を含む液膜を形成する第２吐出部と、
    　を備える、
    　基板処理装置。     a holding part that rotatably holds the substrate;
    a first ejection unit that ejects a mist-like weakly acidic first liquid toward the processing surface of the rotating substrate;
    a second ejection unit that ejects a weakly alkaline second liquid toward the processing surface to form a liquid film containing the second liquid on the processing surface;
    comprising
    Substrate processing equipment.
  2. 　前記第１吐出部は、前記第１液体と不活性ガスを同時に吐出する二流体ノズルである、
    　請求項１に記載の基板処理装置。     The first ejection part is a two-fluid nozzle that ejects the first liquid and an inert gas at the same time,
    The substrate processing apparatus according to claim 1.
  3. 　前記第１吐出部を前記基板の径方向に移動させる駆動部を備える、
    　請求項１に記載の基板処理装置。     A drive unit that moves the first discharge unit in a radial direction of the substrate,
    The substrate processing apparatus according to claim 1.
  4. 　前記処理面に前記第１液体と前記第２液体を同時に供給するように前記第１吐出部及び前記第２吐出部を制御する制御部を備える、
    　請求項１に記載の基板処理装置。     a control unit that controls the first ejection unit and the second ejection unit so as to simultaneously supply the first liquid and the second liquid to the processing surface;
    The substrate processing apparatus according to claim 1.
  5. 　前記第１液体は、炭酸水又はオゾン水であり、
    　前記第２液体は、アンモニア水である、
    　請求項１に記載の基板処理装置。     the first liquid is carbonated water or ozone water,
    The second liquid is aqueous ammonia,
    The substrate processing apparatus according to claim 1.
  6. 　前記処理面は、熱酸化膜が露出した面を含む、
    　請求項１乃至５のいずれか一項に記載の基板処理装置。     The treated surface includes a surface where the thermal oxide film is exposed,
    The substrate processing apparatus according to any one of claims 1 to 5.
  7. 　回転する基板の処理面に向けてミスト状にした弱酸性の第１液体を吐出することと、
    　前記処理面に向けて弱アルカリ性の第２液体を吐出し、前記処理面に前記第２液体を含む液膜を形成することと、
    　を有する、
    　基板処理方法。     discharging a mist-like weakly acidic first liquid toward a processing surface of a rotating substrate;
    discharging a weakly alkaline second liquid toward the processing surface to form a liquid film containing the second liquid on the processing surface;
    having
    Substrate processing method.
  8. 　前記第１液体を吐出することは、二流体ノズルにより前記第１液体と不活性ガスを同時に吐出することを含む、
    　請求項７に記載の基板処理方法。     Ejecting the first liquid includes simultaneously ejecting the first liquid and an inert gas with a two-fluid nozzle,
    The substrate processing method according to claim 7.
  9. 　前記第１液体を吐出することは、前記基板の径方向に沿って前記第１液体の吐出位置を移動することを含む、
    　請求項７に記載の基板処理方法。     Ejecting the first liquid includes moving an ejection position of the first liquid along a radial direction of the substrate,
    The substrate processing method according to claim 7.
  10. 　前記第１液体を吐出すること及び前記液膜を形成することを同時に行うことを含む、
    　請求項７に記載の基板処理方法。     simultaneously performing discharging the first liquid and forming the liquid film;
    The substrate processing method according to claim 7.
  11. 　前記第１液体は、炭酸水又はオゾン水であり、
    　前記第２液体は、アンモニア水である、
    　請求項７に記載の基板処理方法。     the first liquid is carbonated water or ozone water,
    The second liquid is aqueous ammonia,
    The substrate processing method according to claim 7.
  12. 　前記処理面は、熱酸化膜が露出した面を含む、
    　請求項７乃至１１のいずれか一項に記載の基板処理方法。     The treated surface includes a surface where the thermal oxide film is exposed,
    The substrate processing method according to any one of claims 7 to 11.
PCT/JP2022/039687 2021-11-08 2022-10-25 Substrate treatment apparatus and substrate treatment method WO2023080015A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138197A (en) * 1998-11-02 2000-05-16 Tokyo Electron Ltd Processing apparatus and method of processing
JP2020184581A (en) * 2019-05-08 2020-11-12 株式会社荏原製作所 Substrate processing apparatus and substrate processing method
JP2021174959A (en) * 2020-04-30 2021-11-01 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus, substrate processing method, method for generating data for learning, learning method, learning device, method for creating learned model, and learned model

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138197A (en) * 1998-11-02 2000-05-16 Tokyo Electron Ltd Processing apparatus and method of processing
JP2020184581A (en) * 2019-05-08 2020-11-12 株式会社荏原製作所 Substrate processing apparatus and substrate processing method
JP2021174959A (en) * 2020-04-30 2021-11-01 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus, substrate processing method, method for generating data for learning, learning method, learning device, method for creating learned model, and learned model

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