KR20170096731A - Patterned nanostructures by using stimuli-responsive soft nanoparticles and method for manufacturing the same - Google Patents
Patterned nanostructures by using stimuli-responsive soft nanoparticles and method for manufacturing the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
The present invention relates to a patterned nanostructure using external stimulus-responsive soft nanoparticles and a method of manufacturing the same.
In the circuit design for semiconductor and electronic parts manufacturing, the key is micro or nano pattern process. Since 1960, photolithography process has been introduced to circuit design of substrate for electronic parts production. It began to develop. In recent years, a pattern process using nano-level lithography as well as a micro level has been developed, and until recently, it has been widely used as a core technology in the production of electronic parts.
However, the photolithography process involves a complicated process, and there is a disadvantage that a photoresist and an additional chemical substance must be used. Therefore, a new pattern manufacturing technique .
Soft lithography techniques have been developed to pattern various organic and inorganic materials using poly (dimethyl siloxane) (PDMS) as a soft stamp (non-patent document 1-3) master ") and PDMS paint and various organic and inorganic compounds as so-called" coatings ", it is possible to move the paintings to different substrates while maintaining the patterns of the paintings perfectly. In addition to organic and inorganic compounds The fabrication of the pattern of particles has been established, and the possibility of making electronic devices and applying them to various biosystems has been suggested.
In recent years, a variety of techniques have been developed for patterning substrates to the nano level through the development of nanotechnology. For example, dip pen lithography processes utilize various types of probe tips used in atomic force microscopy, (Non-Patent Document 4). Also, in the case of pattern production using a block copolymer, one block may be selectively etched or inorganic compounds may be accumulated using the fact that the internal structure can be formed in the form of sphere, cylinder, lamellar, and gyroid depending on the composition of the block copolymer (Nanoparticle) pattern substrate can be formed by selecting a combination of the organic and inorganic nanoparticles (Non-Patent Document 5-7).
Conventional organic / inorganic particle patterning techniques include, in addition to photolithography, soft lithography or dip pen lithography techniques mentioned above, inkjet printing techniques, colloidal lithography techniques, and in particular colloidal lithography, Dimensional crystalline mono-layer film or a three-dimensional crystal grain multilayer film, and then various patterns are obtained on the basis thereof (Non-Patent Document 8-13).
However, dip pen lithography has a disadvantage in that it is necessary to use an atomic force microscopy (AFM) apparatus, although a nano-level pattern can be formed without forming a mask. In the case of collimated lithography, It is disadvantageous to use an additional method such as etching.
In recent years, techniques for patterning micro / nano particles have begun to apply these pattern processes to various industrial and technical fields. For example, in the bio / environmental industry, various chemical substances can be simultaneously detected on one substrate In order to improve the detection strength through the arrangement of nanoparticles in the pattern to establish the technology, or to make inorganic / metal nanoparticles patterned on the flexible substrate in the electronic industry field, materials capable of imparting various electromagnetic and optical characteristics The application of micro / nano particle pattern technology in the production of metamaterials which can induce the change of plasmonic properties by using structures that regularly pattern bulk materials and association of plasmon nanoparticles in the energy industry Much research is under way.
Accordingly, there is a need to solve the disadvantages of the conventional organic / inorganic patterning technique described above, and to develop a novel oil / inorganic pattern manufacturing technology capable of adjusting the pattern shape to the nano level according to the characteristics of the particles used in the pattern, It is in urgent need of development.
Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a multi- And a method for producing the same.
In order to solve the above problems,
Board; Wherein the external stimulus-responsive soft nanoparticles are reversibly shrunk or expanded according to a change in temperature or a concentration of the salt, and the external stimulus-responsive soft nano- There is provided a patterned nanostructure characterized by forming a soft nanoparticle pattern on a substrate.
Here, the soft nanoparticle pattern may be formed by repeating the external stimulus-responsive soft nanoparticles at the same or different intervals, and the interval of the external stimulus-responsive soft nanoparticles may be reversibly changed according to temperature change or salt concentration It can change.
According to one embodiment of the present invention, the temperature may vary in the range of 0 to 100 占 폚.
According to another embodiment of the present invention, the salt is selected from the group consisting of Na 3 citrate, Na 2 CO 3 , Na 2 SO 4 , Na 2 S 2 O 3 , NaH 2 PO 4 , NaF, NaCl, NaBr, NaNO 3 , NaI, NaClO 4 and NaSCN.
According to another embodiment of the present invention, the concentration of the salt may be in the range of 0.001 to 1 M. [
According to another embodiment of the present invention, the diameter of the external stimulus-responsive soft nanoparticles may be in a range of 10 nm to 5 占 퐉.
According to another embodiment of the present invention, the substrate may be a silicon wafer, glass of silicon / silicon oxide, quartz cover glass, indium tin oxide, ZnO, TiO 2 metal oxide layer, poly (dimethylsiloxane) and polymeric substrates such as poly (methyl methacrylate), polystyrene, poly (ethylene terephthalate), and copolymers thereof.
According to another embodiment of the present invention, the external stimulus-responsive soft nanoparticles may be poly (N-isopropylacrylamide), pNIPAM, poly (N-isopropylacrylamide-co (N-isopropyl acrylamide-co-allylamine), poly (NIPAM-co-AA), poly (N-isopropylacrylamide-co- 2- (dimethylamino) ethyl methacrylate) poly (N-isopropylacrylamide-co-2- (dimethylamino) ethyl methacrylate), poly (NIPAM-co- DMAEMA) (N-isopropyl acrylamide-co-2- (dimethylamino) ethyl acrylate), poly (NIPAM-co-DMAEA) acrylic acid, poly (NIPAM-co-AAc), poly (N-isopropyl acrylamide-co-methacrylic acid) ], Poly (N, N-diethylacrylamide) [p (N, N-diethylacrylamide), poly (N-vinylcaprolactam), poly (ethylene glycol), poly (ethylene glycol-b-propylene glycol) (ethylene glycol-b-propylene glycol-b-ethylene glycol)] may be used.
The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: (a) forming a soft monocrystalline nanocrystal crystal monolayer including external stimulus-responsive soft nanoparticles on a substrate; And (b) forming a soft nanoparticle pattern on the substrate by adjusting a temperature of the substrate on which the soft nanoparticle crystal monolayer is formed, or treating the substrate on which the soft nanoparticle crystal monolayer is formed with a salt solution, A method for producing a patterned nanostructure is provided.
According to the present invention, the size of the external stimulus-responsive soft nanoparticles constituting the soft nanoparticle single layer membrane can be reversibly expanded or contracted depending on the temperature in water or the type and concentration of the salt, thereby reversibly controlling the size, As far as possible, patterns with different sizes, shapes and spacings can be implemented.
In addition, the patterned nanostructure according to the present invention can control the size, shape and spacing of the pattern to a nanometer level according to the characteristics of particles used in the pattern without complicated processes, Electronic industry, and energy industry.
FIG. 1 is a cross-sectional view conceptually showing a state in which external stimulus-responsive soft nanoparticles constituting the single-layered soft nanoparticle crystal of the present invention are shrunk or expanded in accordance with a change in temperature in water.
FIG. 2 is a graph showing changes in size of external stimulus-responsive soft nanoparticles constituting the single-layered soft nanoparticle crystalline nanocrystal according to the present invention. FIG.
FIG. 3 shows a process for producing a patterned nanostructure according to the present invention. When a substrate on which a single-layered soft nanoparticle crystal is formed is treated with a salt solution, the external stimulus-responsive soft nanoparticles are shrunk and separated into individual particles And the intervals between the particles are changed.
4 is a high-magnification SEM image showing the shape of the soft nanoparticle pattern formed on the substrate according to the kind and concentration (0.3 M) of the salt solution.
FIG. 5 is a high-magnification SEM image showing the shape of the soft nanoparticle pattern formed on the substrate when the 0.1 M Na3citrate salt solution is treated. FIG.
6 is an SEM image showing the shape of the soft nanoparticle pattern formed on the substrate before and after the 0.3 M phosphoric salt solution treatment after the formation of the soft monocrystalline monocrystalline layer on the PDMS substrate.
FIG. 7 is a graph showing the results of measurement of the soft nanoparticle pattern formed on a substrate according to temperature changes in water (at 25 DEG C at 55 DEG C, 55 DEG C at 25 DEG C) to confirm the reversible pattern control of the patterned nanostructure according to the present invention. And SEM image and AFM image showing the shape of the AFM.
Hereinafter, the present invention will be described in more detail.
The present invention solves the disadvantages of conventional organic / inorganic pattern technologies that require complicated processes such as mask fabrication, atomic force microscopy (AFM), ion beam etching, and expensive equipment, And to provide a new oil / inorganic pattern manufacturing technology that can easily control the pattern shape to the nano level.
Accordingly, the present invention provides a semiconductor device comprising: a substrate; Wherein the external stimulus-responsive soft nanoparticles are reversibly shrunk or expanded according to a temperature change or a concentration of the salt, and the external stimulus-responsive soft nanoparticles are formed on the substrate, There is provided a patterned nanostructure characterized by forming a soft nanoparticle pattern on a substrate.
At this time, the external stimulus-responsive soft nanoparticles constituting the single-layered soft nanoparticle crystal may undergo reversible shrinkage or swelling due to changes in temperature in water, and the size may be changed. In this case, the temperature may range from 0 to 100 ° C And in particular, abrupt particle change occurs near the living body temperature (32-40 DEG C) (Figs. 1 and 2). In addition, the external stimulus-responsive soft nanoparticles reversibly shrink or expand due to the salting-out effect in the treatment with the salt solution as well as the temperature change (FIG. 3), and the size changes depending on the concentration of the salt solution And the interval between the particles reversibly changes.
Accordingly, the soft nanoparticle pattern according to the present invention is formed by repeating the external stimulus-responsive soft nanoparticles at the same or different intervals, wherein the interval of the external stimulus-responsive soft nanoparticles varies depending on a change in temperature, It can be reversibly changed depending on the concentration of the salt. In conclusion, the nanostructure according to the present invention is capable of reversibly shrinking or expanding depending on the temperature of the external stimulus-responsive soft nanoparticles, the type of the salt solution, and the concentration of the salt solution, , Shape, and spacing can be reversibly adjusted.
The present invention also provides a method for producing a patterned nanostructure comprising the following steps.
(a) forming a soft monocrystalline nanocrystalline crystal monolayer including external stimulus-responsive soft nanoparticles on a substrate; And (b) forming a soft nanoparticle pattern on the substrate by adjusting a temperature of the substrate on which the soft nanoparticle crystal monolayer is formed, or treating the substrate on which the soft nanoparticle crystal monolayer is formed with a salt solution;
At this time, the temperature is not limited thereto, but it may vary in the range of 0 to 100 ° C.
The salt solution may be any salt capable of shrinking or expanding the soft nanoparticles. For example, salts such as Na 3 citrate, Na 2 CO 3 , Na 2 SO 4 , Na 2 S 2 O 3 , NaH 2 PO 4 , NaF, NaCl, NaBr, NaNO 3 , NaI, NaClO 4 and NaSCN. As can be seen from the results of the following Examples The concentration of the salt solution is preferably in the range of 0.001 to 1 M.
The external stimulus-responsive soft nanoparticles constituting the soft magnetic nanoparticle single crystal layer may have a diameter of several nanometers to several micrometers, and more preferably, nanoparticles having a diameter ranging from 10 nm to 5 micrometers may be used .
For example, the substrate may be a silicon wafer, a glass of silicon / silicon oxide, a quartz cover glass, indium tin oxide, ZnO, TiO 2, 2 metal oxide layer, a polymer substrate such as poly (dimethylsiloxane), polyethylene, polypropylene, poly (methyl methacrylate), polystyrene, poly (ethylene terephthalate) or copolymer.
Also, the external stimulus-responsive soft nanoparticles can be both natural and synthetic polymer-based hydrogel nanoparticles that provide a property of reversibly shrinking or expanding depending on the temperature in an aqueous solution. For example, poly (N-isopropyl acrylate Poly (N-isopropyl acrylate), poly (N-isopropyl acrylamide), poly (N-isopropyl acrylamide-co-allylamine) Poly (N-isopropylacrylamide-co-2- (dimethylamino) ethyl methacrylate), poly (NIPAM-co-DMAEMA)] and poly (N-isopropylacrylamide- Poly (N-isopropyl acrylamide-co-2- (dimethylamino) ethyl acrylate), poly (NIPAM-co-DMAEA) Poly (N-isopropyl acrylamide-co-acrylic acid), poly (NIPAM-co-AAc) Poly (N, N-diethylacrylamide) [poly (N, N-dimethylaminopropyl) acrylamide-co-methacrylic acid] poly (ethylene glycol)], poly (ethylene glycol-b-propylene glycol-b-ethyleneglycol), poly (N-vinylcaprolactam) (ethylene glycol-b-propylene glycol-b-ethylene glycol)] may be used.
Hereinafter, the present invention will be described in more detail with reference to preferred embodiments and the like. It will be apparent to those skilled in the art, however, that these examples are provided for further illustrating the present invention and that the scope of the present invention is not limited thereto.
Manufacturing example One. On the substrate A soft nanoparticle crystal comprising an outer stimulus-responsive soft nanoparticle formed Monolayer Produce
(1) Synthesis of soft nanoparticle colloid (poly (N-isopropylacrylamide-co-allylamine))
To an aqueous solution obtained by mixing N-isopropyl acrylamide (1.0 g) and N, N'-methylenebis (acrylamide) (0.08 g) in deionized water (100 g), 70 μL of allylamine and 2 mL of an aqueous solution of potassium persulfate (0.025 g / ml) were sequentially added thereto, followed by heating and stirring at 85 캜 and 300 rpm. After the reaction was carried out for 2-4 hours, the reaction was terminated to synthesize a 1 wt% aqueous solution of poly (N-isopropylacrylamide-co-allylamine).
(2) Preparation of a soft nanoparticle solution for a soft single-layered soft nanoparticle
8 ml of the 1 wt% aqueous solution of poly (N-isopropylacrylamide-co-allylamine) prepared in (1) above was placed in a 1.5 ml centrifuge tube in an amount of 1 ml each and centrifuged (7000 rpm, 30 Min), the supernatant was removed and redispersed in IPA.
(3) Preparation of a soft nanoparticle crystal monolayer film formed on a substrate
The silicon wafer (1.5 cm × 1.5 cm) was immersed in ethanol, washed with a sonicator for 30 minutes, and sufficiently dried. Thereafter, the Petri dish (5.2 cm in diameter) was filled with water and the solution prepared in (2) above was dropped on the surface of the still water so as to fill the surface of the water, thereby dispersing the soft nanoparticles dispersed in the solution in a regular hexagonal lattice (hexagonal lattice) in the form of self-assembly. Then, the silicon nanoparticles were immersed in the self-assembled water to remove the crystalline monolayer floating on the surface of the water, and dried to prepare a soft monocrystalline nanoparticle crystal monolayer.
Manufacturing example 2.
A single-layered soft nano-particle crystal film formed on a substrate was prepared in the same manner as in Preparation Example 1, except that a polydimethylsiloxane substrate was used instead of the silicon wafer in (3) of Production Example 1.
Example One. Na 3 citrate Formation of soft nanoparticle pattern through salt solution treatment
According to Preparation Example 1, a structure in which an external stimulus-responsive soft nanoparticle crystal monolayer film was formed on a silicon wafer substrate was treated with a Na 3 citrate salt solution having concentrations of 0.1, 0.2, and 0.3 M, respectively, Nanostructures were prepared.
Example 2. Na 2 SO 4 Formation of soft nanoparticle pattern through salt solution treatment
According to Preparation Example 1, a structure having an external stimulus-responsive soft nanoparticle crystal monolayer formed on a silicon wafer substrate was treated with a Na 2 SO 4 salt solution having a concentration of 0.1, 0.2, and 0.3 M, respectively, Was prepared.
Example 3. NaH 2 PO 4 Formation of soft nanoparticle pattern through salt solution treatment
According to Preparation Example 1, a structure in which an external stimulus-responsive soft nanoparticle crystal monolayer film was formed on a silicon wafer substrate was treated with a NaH 2 PO 4 salt solution having concentrations of 0.1, 0.2, and 0.3 M, respectively, To prepare a soft nanostructure.
Example 4. Formation of the soft nanoparticle pattern by treatment with NaCl salt solution
According to Preparation Example 1, a structure in which an external stimulus-responsive soft nanocrystalline single crystal film was formed on a silicon wafer substrate was treated with NaCl salt solutions of 0.1, 0.2, and 0.3 M concentrations, respectively, to form a patterned soft nano- Structure.
Example 5. NaNO 3 Formation of soft nanoparticle pattern through salt solution treatment
According to Preparation Example 1, a structure having an external stimulus-responsive soft nanoparticle crystal monolayer formed on a silicon wafer substrate was treated with NaNO 3 salt solutions of 0.1, 0.2, and 0.3 M concentrations, respectively, to form patterned nano- Structure.
Test Example 1. The soft nanoparticle pattern according to the type and concentration of the salt solution SEM Image analysis
The soft nanoparticle patterns formed on the nanostructures of Examples 1 to 5 were analyzed using a scanning electron microscope (SEM). The results are shown in FIG. 4 and FIG. The external stimulus-responsive soft nanoparticles, which constitute the monolayer of soft nanoparticles, are separated into individual particles during salt solution treatment. The degree of shrinkage of external stimulus-responsive soft nanoparticles depends on the type of salt solution and the concentration of the salt solution. It was confirmed that the shape of the pattern was varied. It was confirmed that the soft nanostructure according to the present invention was able to reversibly control the size, shape, and interval of the pattern by controlling the type of the salt solution and the concentration of the salt solution.
Test Example 2. In the treatment of salt solution on a flexible substrate, the soft nanoparticle pattern SEM Images and AFM Image analysis
In order to confirm the applicability to the flexible substrate, SEM image before the treatment of the 0.3 M concentration NaH 2 PO 4 salt solution on the structure having the soft nanocrystalline monocrystalline single layer film formed on the PDMS substrate, And atomic force microscope images after the salt solution treatment were analyzed. The results are shown in FIG. 6.
As a result, it was confirmed that the external stimulus-responsive soft nanoparticles were separated into individual particles and the soft nanoparticle pattern in which the shapes and the intervals of the particles were changed during the salt solution treatment, even when the PDMS substrate was used as the flexible substrate. It has been confirmed that the invention can freely adjust the pattern shape and spacing even on a flexible substrate.
Test Example 3. The soft nanoparticle pattern according to the temperature change in water SEM Images and AFM Image analysis
In order to confirm the reversible change of the soft nanoparticle pattern according to the temperature change in water, NaH 2 PO 4 salt solution was treated according to Example 3 (0.3 M of salt solution) to form a soft nanoparticle pattern SEM image and AFM image of the pattern according to temperature change (25 ° C at 55 ° C and 55 ° C at 25 ° C) were analyzed and the results are shown in FIG.
Thus, a soft nanoparticle pattern is formed using a salt solution, and then the patterned substrate is immersed in water. When temperature changes in water, external stimulus-responsive soft nanoparticles constituting the single-layered soft nanoparticle membrane are reversibly It was confirmed that the size and shape of the particles were varied by shrinkage and expansion. It was confirmed that the nanostructure according to the present invention was able to reversibly control the pattern shape and pattern interval by controlling the temperature in water.
Claims (16)
And a soft nano-particle crystal monolayer including external stimulus-responsive soft nanoparticles formed on the substrate,
Wherein the external stimulus-responsive soft nanoparticles reversibly shrink or expand according to a change in temperature or a concentration of a salt to form a soft nanoparticle pattern on the substrate.
Wherein the soft nanoparticle pattern is formed by repeating the external stimulus-responsive soft nanoparticles at the same or different intervals,
Wherein the spacing of the external stimulus-responsive soft nanoparticles varies reversibly according to a temperature change or a salt concentration.
Lt; RTI ID = 0.0 > 0 C < / RTI > to < RTI ID = 0.0 > 100 C. < / RTI >
Wherein the salt is selected from the group consisting of Na 3 citrate, Na 2 CO 3 , Na 2 SO 4 , Na 2 S 2 O 3 , NaH 2 PO 4 , NaF, NaCl, NaBr, NaNO 3 , NaI, NaClO 4 and NaSCN Wherein at least one of the at least two nanostructured nanostructures is a nanostructure.
Wherein the concentration of the salt is in the range of 0.001 to 1 M. < RTI ID = 0.0 > 1. < / RTI >
Wherein the external stimulus-responsive soft nanoparticles have a diameter in the range of 10 nm to 5 占 퐉.
The substrate may be a silicon wafer, glass of silicon / silicon oxide, quartz cover glass, indium tin oxide, ZnO, TiO 2 metal oxide layer, poly (dimethylsiloxane), polyethylene, polypropylene, poly (methyl methacrylate) terephthalate, or a copolymer thereof. The patterned nanostructure according to claim 1,
The external stimulus-responsive soft nanoparticles may be selected from the group consisting of poly (N-isopropylacrylamide), pNIPAM, poly (N-isopropyl acrylamide) poly (N-isopropylacrylamide-co-2- ((N-isopropylacrylamide-co-AA) dimethylamino) ethyl methacrylate), poly (NIPAM-co-DMAEMA), poly (N-isopropyl acrylamide-co-2- (dimethylamino) ethyl acrylate) dimethylamino) ethyl acrylate, poly (NIPAM-co-DMAEA), poly (N-isopropyl acrylamide-co-acrylic acid) ), Poly (N-isopropyl acrylamide-co-methacrylic acid), poly (NIPAM-co-MAAc) Amide) [poly (N, N-diethylacrylamide)], poly (N-vinylcaprol Poly (ethylene glycol)], poly (ethylene glycol-b-propylene glycol-b-ethylene glycol) [poly (N-vinylcaprolactam)], poly b-ethylene glycol)]. < / RTI >
(b) forming a soft nanoparticle pattern on the substrate by adjusting a temperature of the substrate on which the soft nanoparticle crystal monolayer is formed, or treating the substrate on which the soft nanoparticle crystal monolayer is formed with a salt solution, Wherein the nanostructured nanostructure is prepared by a method comprising the steps of:
Wherein the soft nanoparticle pattern is formed by repeating the external stimulus-responsive soft nanoparticles at the same or different intervals,
Wherein the interval of the external stimulus-responsive soft nanoparticles is reversibly changed according to a temperature change or a salt concentration.
Wherein the temperature varies between 0 and 100 < 0 > C.
Wherein the salt is selected from the group consisting of Na 3 citrate, Na 2 CO 3 , Na 2 SO 4 , Na 2 S 2 O 3 , NaH 2 PO 4 , NaF, NaCl, NaBr, NaNO 3 , NaI, NaClO 4 and NaSCN Wherein the nanostructured nanostructure is one or more nanostructured nanostructures.
Wherein the concentration of the salt is in the range of 0.001 to 1 M.
Wherein the diameter of the external stimulus-responsive soft nanoparticles is in the range of 10 to 5 占 퐉.
The substrate may be a silicon wafer, glass of silicon / silicon oxide, quartz cover glass, indium tin oxide, ZnO, TiO 2 metal oxide layer, poly (dimethylsiloxane), polyethylene, polypropylene, poly (methyl methacrylate) terephthalate, or a copolymer thereof. The method according to claim 1, wherein the polymer matrix is selected from the group consisting of a polymer matrix and a polymer matrix.
The external stimulus-responsive soft nanoparticles may be selected from the group consisting of poly (N-isopropylacrylamide), pNIPAM, poly (N-isopropyl acrylamide) poly (N-isopropylacrylamide-co-2- ((N-isopropylacrylamide-co-AA) dimethylamino) ethyl methacrylate), poly (NIPAM-co-DMAEMA), poly (N-isopropyl acrylamide-co-2- (dimethylamino) ethyl acrylate) dimethylamino) ethyl acrylate, poly (NIPAM-co-DMAEA), poly (N-isopropyl acrylamide-co-acrylic acid) ), Poly (N-isopropyl acrylamide-co-methacrylic acid), poly (NIPAM-co-MAAc) Amide) [poly (N, N-diethylacrylamide)], poly (N-vinylcaprol Poly (ethylene glycol)], poly (ethylene glycol-b-propylene glycol-b-ethylene glycol) [poly (N-vinylcaprolactam)], poly b-ethylene glycol)]. < / RTI >
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