KR20170094824A - Vacuum diffusion inosculating apparatus and method - Google Patents

Vacuum diffusion inosculating apparatus and method Download PDF

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Publication number
KR20170094824A
KR20170094824A KR1020160016025A KR20160016025A KR20170094824A KR 20170094824 A KR20170094824 A KR 20170094824A KR 1020160016025 A KR1020160016025 A KR 1020160016025A KR 20160016025 A KR20160016025 A KR 20160016025A KR 20170094824 A KR20170094824 A KR 20170094824A
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South Korea
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chamber
bonding
heating
bonding material
vacuum diffusion
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KR1020160016025A
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Korean (ko)
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KR101842335B1 (en
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김정길
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두산중공업 주식회사
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/003—Cooling means
    • B23K2201/14—

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The present invention relates to a vacuum diffusion bonding apparatus and a method, comprising: a chamber forming a fixing die on which a plurality of bonding materials are laminated and secured; a welding portion connectively disposed to the chamber to weld the bonding material secured on the fixing die; a heating portion connectively disposed to the chamber to heat the bonding material secured on the fixing die; a plasma forming portion connected to the chamber to generate resistance heat on a contact surface of the bonding material secured on the fixing die; and an evacuation portion connected to the chamber to evacuate an interior portion of the chamber. According to the present invention, a laminate material is able to effectively be bonded using plasma bonding reaction by welding force, radiant heating, and resistance heating in a vacuum state.

Description

[0001] The present invention relates to a vacuum diffusion bonding apparatus and method,

The present invention relates to a vacuum diffusion bonding apparatus and method, and more particularly, to a vacuum diffusion bonding apparatus and method capable of effectively bonding a laminate material using a plasma bonding reaction by a pressing force, a radiation heating and a resistance heating in a vacuum state .

Generally, solid phase bonding is a technique of unifying the base material while keeping the base material in a solid state unlike the conventional fusion welding. This technology is to prevent or minimize the melting of the base material to preserve the inherent characteristics of the base material, minimize the occurrence of defects in the joint, and maximize the characteristics of the integrated parts.

The development of new metal materials such as composite materials and the development of high-tech industries have led to the development of the solid-state welding technology, which is why the existing fusion welding technology requires materials that can not be bonded, materials with complex shapes, high quality and precision It becomes possible to join the material to be welded.

Such solid state bonding techniques include friction bonding using friction heat and diffusion bonding using atom diffusion phenomenon. The diffusion bonding is a method of joining in a solid state by applying a constant pressure to such a degree that the base material does not cause large plastic deformation at a high temperature not melting the base material.

1 shows a conventional diffusion bonding apparatus. 1, a conventional diffusion bonding apparatus 1 using a vacuum is provided with a chamber 2 in which a diffusion bonding process is performed and a die 2 in which a bonding material such as a heat exchanger core is placed. 4 are disposed. Such a die 4 may be configured to be loaded into the chamber 2 by means of a moving means 3 of an industrial facility.

A heating element 5 may be disposed inside the chamber 2. The heating element 5 heats the bonding material placed on the die 4 so that bonding occurs at the contact portion. Above the chamber 2, a ram 7a connected to the rod of the hydraulic cylinder 7 is disposed and provided to press the bonding material.

The operator first fixes the bonding material to the die (4) for diffusion bonding and loads it into the chamber (2). Then, the vacuum pump 8 is used to discharge the air inside the chamber 2 through the valve 8a to the outside. Then, the hydraulic cylinder 7 is operated to press the bonding material with the upper ram 7a, and then the heating element 5 is actuated to cause contact surface bonding.

However, the conventional diffusion bonding apparatus has a plurality of heat transfer systems, which limits the bonding temperature of the bonding material such as a heat exchanger core rapidly. Since the heat transfer efficiency is low due to the radiation system, the heat transfer center core of the heat exchanger core, So that uniform heating is not easy.

Korean Patent Registration No: 10-1034858

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and an object of the present invention is to provide a device capable of effectively bonding a laminated material by using a plasma bonding reaction by a pressing force, And a method therefor.

According to an aspect of the present invention, there is provided a vacuum diffusion bonding apparatus and method, comprising: a chamber in which a plurality of bonding materials are stacked and a fixed die to be placed thereon; And a heating unit disposed in association with the chamber and heating the bonding material placed on the fixing die in such a manner that a resistance heating is formed on a contact surface of the bonding material seated on the fixing die, And a vacuuming unit associated with the chamber so that the plasma forming unit and the inside of the chamber are in a vacuum state.

Further, in the embodiment of the present invention, the pressing portion includes a pressing plate disposed on the fixing die and having a shape conforming to the bonding material, and a pressing plate connected to the pressing plate to move the pressing plate forward or backward And may include a pressurizing drive unit.

Further, in the embodiment of the present invention, the heating unit may include a heating plate disposed along the periphery of the fixing die inside the chamber, and a heating driving unit connected to the heating plate and provided to heat the heating plate .

Further, in the embodiment of the present invention, the plasma forming unit may be configured to join the bonding material by using a spark phenomenon due to resistance heating at the contact surface of the bonding material.

According to an embodiment of the present invention, the plasma forming unit may include a first electrode disposed on the fixed die and forming either a cathode or a cathode, and a second electrode disposed on the pressing plate, And a current supply unit connected to the first electrode and the second electrode to supply current to the first electrode or the second electrode.

Further, in the embodiment of the present invention, the degree of vacuum in the chamber formed by the vacuuming unit may be 10 -4 Torr or less.

Further, in the embodiment of the present invention, the cooling unit further includes a cooling unit connected to the chamber so as to cool the bonding material, wherein the cooling unit is connected to the injection nozzle and a plurality of the injection nozzles disposed on the inner surface of the chamber, And a cooling drive unit for supplying air or cooling water to the cooling unit.

Further, in an embodiment of the present invention, the apparatus further includes a temperature measuring unit disposed in association with the chamber to measure a real time temperature of the bonded material, wherein the temperature measuring unit includes a plurality of A thermocouple and a temperature detecting unit connected to the thermocouple and collecting the local bonding temperature of the bonding material through the signal of the thermocouple.

In the vacuum diffusion bonding method according to the embodiment of the present invention, it is preferable that the vacuum diffusion bonding method further comprises: a step of stacking a material to be laminated on a fixed die; a step of charging a material to be laminated on the fixed die into a chamber; A pressing step for pressing the material and a vacuuming step for forming the inside of the chamber in a vacuum state; a material heating step for heating the bonded material laminated on the fixing die; and a current is applied to the bonding material to generate resistance heat at the contact surface of the bonding material And a plasma treatment step of causing a plasma-state bonding reaction.

Further, in the embodiment of the present invention, the bonding material may be a metal plate material having a channel formed therein, and the bonding material may be laminated such that the channels are crossed with each other.

Further, in the embodiment of the present invention, the degree of vacuum in the chamber may be set to 10 -4 Torr or less.

Further, in the embodiment of the present invention, the material heating step may heat the bonding material by a radiant heating method.

Further, in an embodiment of the present invention, the method may further include a cooling step of cooling the bonding material by injecting air into the chamber after the current applying step.

Further, in the embodiment of the present invention, the cooling step may be configured to cool the bonding material in a state in which the pressing force applied to the bonding material is maintained.

Further, in the embodiment of the present invention, the plasma processing step may be configured to bond the bonding material using a spark phenomenon due to resistance heating at the contact surface of the bonding material.

According to the present invention, by generating a vacuum state, radiating heat in a state in which the bonding material is pressurized, and simultaneously generating resistance heat at the contact surface of the bonding material through current application to induce bonding reaction in a plasma state, It is possible to shorten the bonding process time of the bonded material and improve the bonding force.

In addition, a thermocouple may be provided in the periphery or inside of the bonded material to monitor whether the bonding material is progressing at a uniform temperature between the bonding processes. Joining at a uniform temperature helps to prevent local quality differences in the final bonded product and to maintain quality consistency.

1 is a schematic view showing a conventional vacuum diffusion bonding apparatus.
2 is a schematic view showing a vacuum diffusion bonding apparatus according to the present invention.
3 is a flowchart showing a vacuum diffusion bonding method according to the present invention.
Figures 4A-4G illustrate process steps according to Figures 2 and 3;

Hereinafter, preferred embodiments of a vacuum diffusion bonding apparatus and method according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic view showing a vacuum diffusion bonding apparatus according to the present invention. 2, an embodiment of the vacuum diffusion bonding apparatus of the present invention includes a chamber 11, a pressurizing section 20, a heating section 30, a plasma forming section 40, a vacuuming section 50, a cooling section 70 And a temperature measuring unit 60. The temperature measuring unit 60 may be a temperature measuring unit.

First, the chamber 11 is a closed space, and a fixing die 12, on which a plurality of bonding materials 13 are stacked and seated, may be disposed. A door may be mounted on one side of the chamber 11 so that the fixing die 12 is inserted into the chamber 11 by the moving means 14 Or discharged. Although the moving means 14 is not shown in the drawing, it can be realized by a general mobile device structure. For example, a linear guide for guiding the moving direction, a combination of a motor for driving a ball screw member and a ball screw member, or an engine connected to a chain or a timing belt, a sprocket or a pulley and a slip kit or a rotary shaft of a pulley have.

The chamber 11 may be made of a heat resistant material so as to withstand the high temperature generated when the bonding material 13 is heated by the heating unit 30. The electric current applied by the plasma forming unit 40 may leak But it can also be made of an insulating material.

The fixing die 12 is flat at the top and the bonding material 13 can be seated and the bottom can be connected to the moving means 14 of the industrial equipment. The moving means 14 may be a device connected to a power device such as a linear guide, a rail, a chain, and the like. The fixing die 12 may be made of a metal material that can be energized with the first electrode to be discussed below.

Next, the pressing portion 20 may be disposed in association with the chamber 11 so as to press the bonding material 13 seated on the fixing die 12. [ The pressing unit 20 may include a pressure plate 21 and a pressure driving unit 22. [

The pressure plate 21 may be disposed on the upper surface of the fixing die 12 and may have a shape conforming to the bonding material 13. In the embodiment of the present invention, the bonding material 13 may be a heat exchanger core, so that the shape of the pressure plate 21 may be flat. The pressure plate 21 may be made of a metal material that can be energized with the second electrode 42 to be discussed below.

The pressurizing driving unit 22 may be provided through the chamber 11 and connected to the pressing plate 21 and may be provided to advance or retract the pressing plate 21 toward the fixing die 12. The pressure drive unit 22 may be a hydraulic cylinder. And the pressure plate 21 can be connected to the rod of the hydraulic cylinder. In this case, as the hydraulic cylinder rod advances, the pressure plate 21 descends in the direction of the bonding material 13 and contacts to press the bonding material 13.

A heat resistant gasket or the like may be disposed on the portion of the chamber 11 through which the rod of the hydraulic cylinder penetrates to maintain the sealing force.

Here, the worker can appropriately adjust the pressing force by the pressing portion 20 in accordance with the yield strength at the bonding temperature of the work. That is, the bonding material 13 may be made of copper, aluminum, iron, or the like. In this case, the bonding temperature of the material is different depending on the properties of the material, and the yield strength at the bonding temperature of the material is also different.

The operator can input the yield strength at the bonding temperature of each material in advance as data according to the properties of the material, and thereby, the pressing force of the hydraulic cylinder can be automatically set.

Next, the heating unit 30 may be disposed in association with the chamber 11 so as to heat the bonding material 13 seated on the fixing die 12. The heating unit 30 may include a heating plate 31 and a heating driving unit 32.

First, the heating plate 31 may be disposed along the periphery of the fixing die 12 in the chamber 11. The heating plate 31 may be in the form of a resistance heating element such as a heating wire, an electric heater, an electric furnace or a resistance furnace, and may be disposed along the periphery of the bonding material 13 at the periphery of the fixing die 12. This is for uniformly heating the bonding material 13.

The heating drive unit 32 may be connected to the heating plate 31 and may be provided to heat the heating plate 31 and may be configured as a power supply unit for supplying power to the heating plate 31.

Next, the plasma forming unit 40 may be configured to be connected to the chamber 11 such that resistance heating is formed on the contact surface of the bonding material 13 that is seated on the fixed die 12. The plasma forming unit 40 may include a first electrode 41, a second electrode 42, and a current supply unit 43.

First, the first electrode 41 is disposed on the pressure plate 21 and may be configured to form either a cathode or a cathode. The second electrode 42 may be disposed on the fixed die 12 and may be formed to be opposite to the first electrode 41.

The current supply unit 43 is connected to the first electrode 41 and the second electrode 42 so as to supply a low voltage and a large current to the first electrode 41 or the second electrode 42 Lt; / RTI > The current applied here may be a DC current, a pulse current, or the like.

For example, when the first electrode 41 is formed as a positive electrode, when the current supply unit 43 applies a current in the direction of the first electrode 41, the current is connected to the first electrode 41 Flows in the direction of the bonding material from the pressure plate 21 and flows to the second electrode 42 through the fixing die 12.

At this time, contact resistance heat is generated at the contact surface of the bonding material 13. This is due to the minute spacing between the contact surfaces of the respective bonded materials 13. When the current flows, the minute gap acts as a resistor to generate a heat therebetween. When the heating state is continued to reach the bonding temperature of the material, the spark plasma is generated at the contact surface of each bonding material 13 ). That is, a bonding reaction occurs. The heating temperature at the contact surface of the bonding material can be raised more quickly due to the heating by the heating unit and the contact resistance heat generation by the plasma forming unit 40. [

Here, the plasma state means that when heat is applied to a solid state material, it changes into a gaseous state through a liquid state. Here, electrons are separated from an atom or a molecule by applying more energy and electrons (anions) and cations are independently present, State. In the bonding technique in the plasma state, electrons of one bonding material are combined with positive ions of another bonding material due to such current conduction at the contact surface of the bonding material, and sparks are generated at the contact surface.

Next, the evacuation unit 50 may be disposed in association with the chamber 11 so that the inside of the chamber 11 is evacuated. The evacuation unit 50 sucks air inside the chamber 11 by a vacuum pump 52 connected to the gas hole 51 provided in the chamber 11 to evacuate the inside of the chamber 11 have.

At this time, the degree of vacuum inside the chamber 11 by the vacuuming unit 50 may be 10 -4 Torr or less. In order to make such a high vacuum state, the major pump 52 that can be used in the embodiment of the present invention may be a diffusion pump, a turbo molecular pump, or the like.

Next, the cooling unit 70 may be disposed in association with the chamber 11 so as to cool the bonded material 13 subjected to pressurization, heating, and plasma treatment. The cooling unit 70 may include an injection nozzle 71 and a cooling drive unit 72.

A plurality of the injection nozzles 71 may be disposed on the inner surface of the chamber 11 and the cooling drive unit 72 may be connected to the injection nozzles 71, . ≪ / RTI >

In this case, cooling is performed after the joining process by the heating unit 30 and the plasma forming unit 40. Here, the pressing force by the pressing unit 20 may be maintained.

This is because spraying low-temperature air or cooling water while maintaining the pressing force after bonding using the plasma state at the contact surfaces of the respective bonded materials 13 is effective for firmly maintaining the bonding force at the bonded portions.

Next, the temperature measuring unit 60 may be disposed in association with the chamber 11 so as to measure the real time temperature of the bonding material 13. The temperature measuring unit 60 may include a thermocouple 61 and a temperature detecting unit 62.

First, a thermocouple 61 may be disposed adjacent to the fixed die 12 within the chamber 11. [ The thermocouple 61 is for measuring the temperature of the bonding material 13 and may be disposed along the periphery of the bonding material 13 at the periphery of the fixing die 12. [ Alternatively, it can be attached to multiple points. Of course, in order to measure the temperature at the center of the bonding material 13, it may be put into the flow path 13a formed in the bonding material 13 and arranged. Alternatively, the temperature of the center portion may be measured by inserting a thermocouple by machining a hole in the bonding material 13.

The temperature detecting unit 62 may be connected to the thermocouple 61 and may be provided to collect the local bonding temperature of the bonding material 13 through the signal of the thermocouple 61. The temperature detecting unit 62 collects data by whether the temperature is uniformly heated on the surface or inside of the bonding material 13, whether there is a local bonding temperature difference at the bonding temperature of the material, or the like. The difference in the heating temperature or the difference in the bonding temperature affects the quality deviation of the bonding material 13 such as the heat exchanger core. Therefore, it is confirmed through the temperature detection unit 62 whether the bonding material 13 is uniformly heated, resistance heated, and bonded.

The operator can individually control the pressure drive unit 22, the heating drive unit 32, the current supply unit 43, the vacuum pump 52 and the cooling drive unit 72 by the operator .

The embodiment of the vacuum diffusion bonding apparatus according to the present invention has the above-described configuration, and it is possible to bond the bonding material more quickly than before using the plasma state by pressurization, heating, and resistance heating, and to assure the quality of the final product.

Next, FIG. 3 is a flowchart showing a vacuum diffusion bonding method according to the present invention, and FIGS. 4A to 4G are views showing a process according to FIGS. 2 and 3.

3, the embodiment of the vacuum diffusion bonding method of the present invention includes the steps of stacking a material S1, a material charging step S2, a material pressing step S3, a vacuuming step S4, a material heating step S5, , A plasma processing step (S6), and a cooling step (S7).

The material stacking step S1 may be a step of stacking the bonding material 13 on the fixed die 12 as shown in FIG. 4A. Here, the bonding material 13 may be each laminated metal plate material of the heat exchanger core, and each of the bonding materials 13 may be provided with a flow path 13a. For example, the thickness of the metal plate may be about 2 mm, and may be stainless steel, a Ni alloy, a Ti alloy, an Al alloy, or the like. The processing of the flow path 13a of the metal plate can be realized by electrochemical etching or machining. The surface of the metal plate before lamination can be subjected to a pretreatment process that maintains cleanliness through acetone cleaning. At this time, the bonding material 13 may be laminated such that the flow paths 13a intersect with each other. This is to ensure better heat transfer in the heat exchanger core.

Next, the material charging step S2 may be a step of charging the bonding material 13 stacked on the fixed die 12 into the chamber 11 as shown in FIG. 4B. The operator drives the moving means 14 of the industrial equipment to move the fixed die 12 into the chamber 11. [

The material pressing step S3 may be a step of pressing the bonding material 13 stacked on the upper end of the fixing die 12 introduced into the chamber 11 as shown in FIG. 4C. This is for the purpose of deformation of the bonding material according to the temperature change during the heating and plasma forming process, prevention of back closure and adhesion between the contacting surfaces in the diffusion bonding. When the worker operates the pressurizing drive unit 22, the presser plate 21 is lowered and presses the bonding material 13. At this time, depending on the material of the bonding material 13, the pressing force can be set in consideration of the yield strength at the bonding temperature.

The next evacuation step S4 may be a step of forming the inside of the chamber 11 into a vacuum state as shown in Fig. 4D. The operator operates the vacuum pump 52 to turn the inside of the chamber 11 into a vacuum state so that the air inside the chamber 11 is discharged to the outside through the gas hole 51. At this time, the degree of vacuum inside the chamber 11 may be 10 -4 Torr or less. The degree of vacuum of 10 -4 Torr or less is in a high vacuum state, which prevents poor bonding and product quality deterioration due to impurities in the air during bonding in a plasma state, and prevents diffusion by air impurities .

The next material heating step S5 may be a step of heating the bonding material 13 stacked on the fixed die 12 as shown in Fig. 4E. When the worker operates the heating drive unit 32, the heating plate 31 is operated to heat the peripheral portion of the bonding material 13. At this time, the heating plate 31 is not in close contact with the bonding material 13, but is spaced apart from the bonding material 13, so that the heating method can be applied as a radiant heating method.

The heating temperature may be set differently depending on the bonding temperature of the state of the bonding material 13. For example, in the case of a bonded material of the same material, the melting point is about 1080 ° C, so the operator can preset the heating temperature to be lower than 1080 ° C. In the case of an aluminum bonded material, the melting point is about 660 ° C, so the operator can preset the heating temperature to be less than 660 ° C in accordance with the characteristics of the material. If the bonding material is made of iron material, the melting point is about 1540 ° C, so the operator can set the heating temperature to less than 1540 ° C according to the characteristics of the material.

Since the diffusion bonding technique uses a certain amount of pressing force and heat generation in a state where the bonding material is in a solid state of an infusible material, a detailed heating temperature range can be determined considering the pressing force magnitude. In the embodiment of the present invention, the heating range by the heating unit may be 600 to 1200 ° C. The detailed heating range can be individually determined depending on the material properties of the bonded material such as the heat exchanger core and the magnitude of the pressing force.

Next, in the plasma processing step S6, as shown in FIG. 4F, a current is applied to the bonding material 13 to generate resistance heat at the contact surface A of the bonding material 13, thereby causing a bonding reaction in the plasma state .

When the operator operates the current supply unit 43 to supply current to the first electrode 41, the current passes through the heating plate 31 and is transferred to the bonding material 13. The lower end of each bonding material is in contact with the upper end of another bonding material in which the flow path 13a is formed so that the resistance heating due to the minute spacing Lt; / RTI > The fine gaps interfere with the flow of current, which acts as a resistor.

At this time, the resistance heat generated by the continuously flowing current forms a plasma state at the contact surface (A) of each bonding material. Of course, the heat continuously generated by the heating plate 31 also causes this plasma state to be induced more quickly.

In this plasma state, a bonding reaction occurs in each bonding material 13. Since the heating and the plasma are simultaneously used, the bonding time is shorter than in the prior art.

Next, the cooling step S7 may be a step of cooling the bonding material 13 by injecting air into the chamber 11 as shown in FIG. 4G. The operator operates the cooling drive unit 72 to cool the bonding material by spraying low-temperature air or cooling water through the plurality of injection nozzles 71 formed on the inner surface of the chamber 11. [

At this time, the bonding material 13 can be cooled while the pressing force applied to the bonding material 13 is maintained. This is to keep the bonding force of the joint part firm by spraying low-temperature air or cooling water while maintaining the pressing force after the joint using the plasma state at the contact surfaces of the respective joint materials 13.

The operator then releases the platen 21 and opens the door of the chamber 11 to eject the fixed die 12 and produce the final bonded product.

In the vacuum diffusion bonding method of the present invention, the material can be bonded faster than the conventional method by simultaneously using the heating and the plasma state through the above process.

The foregoing merely shows specific embodiments of the vacuum diffusion bonding apparatus and method.

Therefore, it should be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims. do.

10: vacuum diffusion bonding apparatus 11: chamber
12: fixed die 13: bonded material
13a: Flow passage 20:
21: pressure plate 22: pressure drive unit
30: heating section 31: heating plate
32: Heating drive unit 40: Plasma forming part
41: first electrode 42: second electrode
43: current supply unit 50:
60: Temperature measuring part 61: Thermocouple
62: temperature detection unit 70: cooling unit
71: injection nozzle 72: cooling drive unit
80:

Claims (15)

A chamber in which a plurality of bonding materials are stacked and on which a stationary die is placed;
A pressing portion disposed in association with the chamber so as to press the bonded material seated on the fixed die;
A heating unit disposed in association with the chamber so as to heat the bonded material placed on the fixed die;
A plasma forming part connected to the chamber so that resistance heating is formed on a contact surface of the bonded material placed on the fixed die; And
A vacuuming unit connected to the chamber so that the inside of the chamber is evacuated;
And a vacuum diffusion bonding apparatus.
The method according to claim 1,
The pressing portion
A pressing plate disposed on the fixing die and having a shape conforming to the bonding material; And
A pressure drive unit connected to the pressure plate and provided to move the pressure plate forward or backward in the direction of the fixed die;
Wherein the vacuum diffusion bonding apparatus comprises a vacuum diffusion bonding apparatus.
3. The method of claim 2,
The heating unit includes:
A heating plate disposed within the chamber along the periphery of the fixed die; And
A heating drive unit connected to the heating plate and provided to generate heat of the heating plate;
Wherein the vacuum diffusion bonding apparatus comprises a vacuum diffusion bonding apparatus.
3. The method of claim 2,
Wherein the plasma forming portion joins the bonding material using a sparking phenomenon caused by resistance heating at a contact surface of the bonding material.
5. The method of claim 4,
The plasma forming unit includes:
A first electrode disposed on the fixed die and forming either a cathode or a cathode;
A second electrode disposed on the pressure plate and formed opposite to the first electrode; And
A current supply unit connected to the first electrode and the second electrode to supply current to the first electrode or the second electrode;
Wherein the vacuum diffusion bonding apparatus comprises a vacuum diffusion bonding apparatus.
The method according to claim 1,
Wherein a vacuum degree of the inside of the chamber formed by the evacuated portion is 10 -4 Torr or less.
The method according to claim 1,
And a cooling part connected to the chamber so as to cool the bonding material,
The cooling unit includes:
A plurality of spray nozzles disposed on the inner surface of the chamber;
A cooling drive unit connected to the injection nozzle and supplying air or cooling water to the injection nozzle;
Wherein the vacuum diffusion bonding apparatus comprises a vacuum diffusion bonding apparatus.
3. The method of claim 2,
And a temperature measuring unit arranged in association with the chamber to measure a real time temperature of the bonded material,
The temperature measuring unit includes:
A plurality of thermocouples disposed within the chamber adjacent the fixed die; And
A temperature detecting unit, connected to the thermocouple, for collecting a local bonding temperature of the bonding material through the signal of the thermocouple;
Wherein the vacuum diffusion bonding apparatus comprises a vacuum diffusion bonding apparatus.
In the vacuum diffusion bonding method,
A material laminating step of laminating the bonding material on the fixed die;
A material charging step of charging the bonding material laminated on the fixed die into the chamber;
A material pressing step of pressing the bonded material laminated on the fixed die;
A vacuuming step of forming the inside of the chamber in a vacuum state;
A material heating step of heating the bonded material laminated on the fixed die; And
A plasma processing step of applying a current to the bonding material to generate resistance heat at a contact surface of the bonding material to cause a bonding reaction in a plasma state;
And a vacuum diffusion bonding method.
10. The method of claim 9,
Wherein the joining material is a metal plate material in which a passage is machined, and the joining material is laminated so that the channels cross each other.
10. The method of claim 9,
Wherein the vacuuming step comprises forming the chamber with a degree of vacuum of 10 -4 Torr or less.
10. The method of claim 9,
Wherein the material heating step heats the bonding material by a radiation heating method.
10. The method of claim 9,
And cooling the bonding material by injecting air into the chamber after the current application step.
14. The method of claim 13,
Wherein the cooling step cools the bonding material in a state in which the pressing force applied to the bonding material is maintained.
10. The method of claim 9,
Wherein the plasma processing step comprises joining the bonding material using a sparking phenomenon caused by resistance heating at a contact surface of the bonding material.
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