KR20170088322A - Flexible substrate laminate for releasing surface strain and flexible electronic device compring same - Google Patents

Abstract

The present invention relates to a flexible substrate laminate which includes: a flexible substrate; and a base material to reduce the strain of the flexible substrate on one side of the flexible substrate. The flexible substrate laminate according to the present invention reduce surface strain and shear stress by including the base material to reduce surface strain, thereby minimizing the performance degradation of a device. Also, the present invention can be applied to various electronic devices with improved bending resistance properties without the performance degradation after a bending process by applying the flexible substrate laminate.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a flexible substrate laminate for reducing surface strain and a flexible electronic device including the same.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible substrate laminate and a flexible electronic device including the same, and more particularly to a flexible substrate laminate including a substrate for reducing surface strain and reducing surface shear stress and surface strain, To an electronic device.

BACKGROUND ART As electronic products improved in portability according to the lives of modern people have been spotlighted, a lot of efforts have been made to improve the portability by making electronic products small in size, light in weight, thin in thickness. Especially, a display device, a mobile phone, a digital device, and an information communication device which are improved in portability and mobility by constituting a display device and a memory device on a flexible substrate due to the development of technology are being developed. In addition, in recent years, industries and markets for transparent displays have been expanding, and flexible substrates and materials have been actively developed for this purpose.

As a result, a flexible substrate is used as a polymer which is lighter, durable and has excellent flexibility. Korean Patent Laid-Open Publication No. 10-2004-0014324 discloses a transparent conductive flexible substrate on which a conductive thin film is formed on a surface and a protective film is provided on the surface of the conductive thin film. Korean Patent Laid-Open No. 10-2009-0050014 discloses a method of forming a carbon nanotube composite film by coating a carbon nanotube composite composition on a base substrate to form a carbon nanotube composite film, acid-treating the carbon nanotube composite film in an acid solution for a predetermined time, Forming a transparent electrode on the transparent conductive flexible substrate.

However, in the case of a flexible substrate known in the art, the bending property of the flexible substrate does not meet the practical use requirement of the flexible device, and the manufacturing process is complicated, which causes problems such as an increase in manufacturing cost and a decrease in productivity. Further, a shearing stress is applied to the entire device, and a surface strain accompanied by a shear stress of the surface has a problem in that the performance of the flexible device sharply decreases when the device is bent or repeatedly bent .

An object of the present invention is to provide a flexible substrate laminate for reducing the surface strain and surface strain by including a substrate for reducing surface strain.

In addition, it is an object of the present invention to provide a flexible electronic device in which the performance degradation is minimized even after bending by applying such a flexible substrate laminate.

According to an aspect of the present invention,

Flexible substrate; And a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate.

The shear modulus (G ₁ ) of the flexible substrate may be greater than the shear modulus (G ₂ ) of the substrate.

The ratio of the shear modulus (shear modulus, G ₁₎ and the shear modulus (shear modulus, G ₂₎ of the base material of the flexible substrate (G ₁ / G ₂₎ may satisfy the following expression (1).

[Formula 1]

1 < G ₁ / G ₂ &lt; / = 10 ⁴

Bending (bending) of the flexible substrate stack may be a surface strain (surface strain, γ ₂₎ of the substrate is larger than the surface strain (surface strain, γ ₁₎ of the flexible substrate.

The bending the flexible substrate laminate is the ratio (γ ₂ / γ ₁₎ of the surface strain (surface strain, γ ₂₎ with a surface strain (surface strain, γ ₁₎ of the flexible substrate of the base material to satisfy the following formula (2) have.

[Formula 2]

1 &lt;? ₂ /? ₁ ≤ 10 ³

The flexible substrate may comprise a polymer.

Wherein the polymer is selected from the group consisting of polytetrafluoroethylene, polyimide, polyamide, polyester, polyethylene, polypropylene, polyester, polyurethane, polydimethylsiloxane, polyacrylate, polyarylate, Or more.

The substrate may include at least one selected from elastomers such as silicone and rubber.

The substrate may be an adhesive.

The pressure-sensitive adhesive may include at least one of silicone, polyurethane, acrylic resin, butyl rubber and polyimide.

According to another aspect of the present invention,

There is provided a flexible electronic device comprising a flexible substrate and a flexible substrate laminate including a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate.

The flexible substrate laminate is an adhesive tape, and the flexible electronic device can be transferred to another substrate using the adhesive tape.

The flexible electronic device may be any one selected from a transistor, a solar cell, an organic light emitting diode, a tactile sensor, a radio wave identification tag, an electronic paper, and a biosensor.

Wherein the flexible electronic device is a transistor,

A flexible substrate laminate including the flexible substrate and a substrate for reducing strain of the flexible substrate on one side of the flexible substrate; A gate electrode on the flexible substrate laminate; A gate insulating layer on the gate electrode; A source electrode and a drain electrode on the gate insulating layer; And an active layer between the source electrode and the drain electrode.

The flexible substrate laminate of the present invention has the effect of reducing surface shear stress and surface strain when used as a substrate, including a substrate for reducing surface strain unlike the prior art.

Further, the present invention is applicable to a flexible electronic device having improved bending characteristics, in which degradation in performance is minimized even after bending, by applying such a flexible substrate laminate.

FIG. 1 shows measurement results for confirming the bending property of the graphene field effect transistor manufactured according to the first embodiment of the present invention.
Fig. 2 is a measurement of a 2D shear-lag model of a flexible substrate / substrate / paper (a) and a flexible substrate (b) produced according to Example 2 and Comparative Example 1.
FIG. 3 is a graph showing the surface strain measured according to the bending radius of the graphene field effect transistor manufactured according to the device example 1 and the device comparative example 1. FIG.
4 is a schematic view showing a resistance change test according to bending of an aluminum thin film on a flexible substrate laminate according to Example 2 and Comparative Example 1. Fig.
5 is a graph showing a resistance change test result according to bending of an aluminum thin film on a flexible substrate laminate according to Example 2 and Comparative Example 1. Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

However, the following description does not limit the present invention to specific embodiments. In the following description of the present invention, detailed description of related arts will be omitted if it is determined that the gist of the present invention may be blurred .

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises ", or" having ", and the like, specify that the presence of stated features, integers, steps, operations, elements, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, or combinations thereof.

Also, when an element is referred to as being "formed" or "laminated" on another element, it may be directly attached or laminated to the front surface or one surface of the other element, It will be appreciated that other components may be present in the &lt; / RTI &gt;

Hereinafter, the flexible substrate laminate for an element of the present invention will be described in detail. However, it should be understood that the present invention is not limited thereto, and the present invention is only defined by the scope of the following claims.

The flexible substrate laminate of the present invention may include a flexible substrate and a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate.

The shear modulus (G ₁ ) of the flexible substrate may be greater than the shear modulus (G ₂ ) of the substrate, and the difference may satisfy Equation 1 below. Shear modulus means the proportionality constant between the shear stress and the shear strain when the material undergoes shear stress within the elastic range.

* [Equation 1]

1 < G ₁ / G ₂ &lt; / = 10 ⁴

The ratio of the shear modulus of the flexible substrate to the shear modulus of the substrate is preferably 1 < G ₁ / G ₂ 10 ⁴ , preferably 10 G ₁ / G ₂ 10 ³ , more preferably 10 ² G ₁ / G ₂ ? 10 ³ .

If there is no difference in shear modulus between the flexible substrate and the substrate, the strain of the flexible substrate can not be reduced. If the shear modulus difference is too large, application to the device may be difficult.

 The substrate including the low elastic material having a small shear modulus of elasticity absorbs the shear stress applied to the flexible substrate laminate to apply a relatively large shear stress and a relatively small shear stress is applied to the flexible substrate of the flexible substrate laminate . Therefore, as the shear stress of the flexible substrate is reduced, the surface strain can also be reduced.

If the shear elastic modulus of the substrate and the flexible substrate are the same, a uniform shear stress is applied to the flexible substrate laminate as a whole, and a relatively large shear stress can be applied to the flexible substrate. As a result, the shear strain of the surface also becomes relatively large, and the performance of the element formed on the surface of the flexible substrate may be deteriorated.

The surface strain (γ ₂ ) of the substrate may be greater than the surface strain (γ ₁ ) of the flexible substrate, and the difference may satisfy Equation 2 below .

[Formula 2]

1 <γ ₂ / γ ₁ ≤10 ³

The ratio of the surface strain of the substrate to the surface strain of the flexible substrate is 1 < 粒₂ / 粒₁ ? 10 ³ , preferably 10?? ₂ / γ ₁ ? 10 ³ , more preferably 10?? ₂ / γ ₁ &Lt; / ^RTI &gt;

If there is no difference in surface strain between the flexible substrate and the substrate, degradation of performance of the device can not be minimized. If the surface strain difference is too large, delamination may occur between the flexible substrate and the substrate.

Wherein the polymer is selected from the group consisting of polytetrafluoroethylene, polyimide, polyamide, polyester, polyethylene, polypropylene, polyester, polyurethane, polydimethylsiloxane, polyacrylate, polyarylate, Or more.

The substrate may include at least one selected from elastomers such as silicone and rubber.

The substrate may be an adhesive.

The pressure-sensitive adhesive may include at least one of silicone, polyurethane, acrylic resin, butyl rubber and polyimide.

The flexible substrate laminate need not necessarily be formed of two layers, and a plurality of the substrate and the flexible substrate may be stacked at random. In another embodiment, a plurality of the substrate and the flexible substrate may be alternately repeated.

The plurality of flexible substrates included in the flexible substrate laminate need not always be made of the same polymer, but may be made of the same polymer, or a part of the same polymer, or may be made of different polymers.

The plurality of substrates included in the above-mentioned flexible substrate laminate are not necessarily composed of the same components, but may be composed of the same components, partially containing the same components, or different components.

According to another aspect of the present invention there is provided a flexible electronic device comprising as a substrate a flexible substrate laminate comprising a flexible substrate and a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate.

 The flexible substrate laminate for an element of the present invention may be an adhesive tape, and an electronic device may be formed on the adhesive tape and transferred to another substrate.

The electronic device may be any electronic device such as a transistor, a solar cell, an organic light emitting diode, a tactile sensor, a radio wave identification tag, an electronic paper, a biosensor, or any other device capable of applying the flexible substrate laminate.

Taking a transistor as an example, a transistor formed on a flexible substrate laminate of the present invention includes a flexible substrate laminate including a flexible substrate and a substrate for reducing the strain of the flexible substrate on one surface of the flexible substrate; A gate electrode on the flexible substrate laminate; A gate insulating layer on the gate electrode; A source electrode and a drain electrode on the gate insulating layer; And an active layer between the source electrode and the drain electrode.

[Example]

Hereinafter, preferred embodiments of the present invention will be described. However, this is for illustrative purposes only, and thus the scope of the present invention is not limited thereto.

Example  One

A Scotch tape (3M (TM), 5480, PTFE thickness 50 m, silicon adhesive thickness 44 m) as a flexible substrate laminate including a polytetrafluoroethylene (PTFE) as a flexible substrate and a silicone adhesive as an adhesive substrate was prepared. The tape was adhered onto a silicon wafer to produce a silicon wafer to which a scotch tape was adhered. Next, a polyimide solution (VTEC ™, PI-1388) was spin-coated at 3000 rpm for 30 seconds on a silicon wafer to which the scotch tape was adhered, and baked at 60 ° C. and 150 ° C. for 10 minutes, A flexible substrate laminate having a polyimide layer formed on a tetrafluoroethylene flexible substrate was prepared.

Example  2

A flexible substrate laminate was produced in the same manner as in Example 1, except that the polyimide layer was not formed.

device Example  One

A flexible substrate laminate was prepared as a substrate in the same manner as in Example 1, and then an aluminum layer (30 nm) was thermally deposited as a gate electrode on the polyimide layer of the substrate using a shadow mask in a thermal evaporator .

Thereafter, the aluminum layer was oxidized in an oxygen plasma chamber for 7 minutes under RF power of 250 W to form a gate insulating layer on the surface of the aluminum layer. During the plasma treatment, the oxygen pressure was kept to the lowest possible level during the presence of the plasma. At this time, the lowest pressure level of the plasma chamber was 12 mTorr.

Next, source and drain electrodes (5 nm thick titanium and 40 nm thick gold) were thermally deposited on the gate insulating layer using a shadow mask.

Finally, a graphene active layer was formed on the gate dielectric layer by a dry transfer method so as to electrically connect the source and drain electrodes. Specifically, polybutadiene and PMMA were sequentially coated on the graphenes grown on the copper foil to form a bilayer support layer. The graphenes present on the opposite side of the coating surface were removed through an oxygen plasma, and then 0.1M ammonium persulfate And the copper foil was etched. After the copper foil is etched, the PMMA / polybutadiene / graphene layer floating in the aqueous ammonium persulfate solution is transferred to the distilled water bath, and then the PMMA / polybutadiene / graphene layer floating in the water is fixed to the perforated sample holder and dried . Next, the polybutadiene / PMMA / graphene layer fixed to the holder is contacted with the source and drain electrodes and the gate insulating layer, and the graphene is dry transferred by applying heat and pressure to form a graphene active layer, .

* Comparative Example 1

A polyimide film (thickness: 125 mu m) was prepared.

device Comparative Example  One

A graphene field effect transistor was fabricated in the same manner as in Example 1 except that the polyimide film of Comparative Example 1 was used as a substrate instead of the flexible substrate laminate of Example 1.

[Test Example]

Test Example  One: Grapina  Of a field effect transistor Flexion  Identify characteristics

FIG. 1 (a) is a graph showing the electrical characteristics of a graphene field effect transistor manufactured according to Example 1 on a silicon wafer, and FIG. 1 (b) After the transistor was adhered to paper, it was stretched again to analyze the electrical characteristics.

The channel width of the graphene field effect transistor was fixed at 85 탆, and the ratio of length to width (W / L) was 0.2. We measured the gate - source voltage for the channel resistance of graphene field effect transistors on different substrates and analyzed their electrical characteristics.

1 (a) and 1 (b), the mobility of the graphene field effect transistor manufactured according to the first embodiment of the present invention was slightly reduced after crumpling, but the difference was small, It was found that the electrical characteristics were well maintained.

Accordingly, it was found that the graphene field effect transistor manufactured according to the first embodiment of the present invention has excellent bending resistance.

Test Example  2: Shear stress measurement

Fig. 2 (a) shows a 2D shear-lag model measured after adhering a flexible substrate laminate comprising a flexible substrate / substrate prepared according to Example 2 to paper, and Fig. 2 (b) Shows a 2D shear delay model of a polyimide film (flexible substrate) prepared according to Comparative Example 1 measured.

2 (a) and 2 (b), in the flexible substrate laminate produced according to Example 2, the shear stress is concentrated on the silicone adhesive of the scotch tape, and the surface strain is relatively small on the surface of the flexible substrate laminate I could see that it appeared. On the contrary, it was found that the polyimide film produced according to Comparative Example 1 was uniformly subjected to shearing stress as a whole, resulting in a large surface strain on the surface of the polyimide film.

Thus, the flexible substrate laminate of Example 2 has a surface strain smaller than that of the polyimide film of Comparative Example 1, and it is considered that damage to the devices on the flexible substrate can be minimized when the flexible substrate laminate is bent.

Test Example  3: Measurement of surface strain according to bending radius of curvature

FIG. 3 is a graph showing the surface strain measured according to the bending radius of the graphene field effect transistor manufactured according to the device example 1 and the device comparative example 1. FIG.

3, when the bending radius of curvature is about 0.1 cm, the surface strain of the graphene field effect transistor substrate manufactured according to Comparative Example 1 is higher than that of the surface of the graphene field effect transistor substrate manufactured according to Embodiment 1 Which is about 5 times larger than the strain.

Therefore, it was confirmed that the silicon-based adhesive portion of the graphene field effect transistor manufactured according to the Embodiment 1 absorbed the shear stress, and the surface strain of the substrate was much lower than that of the graphene field effect transistor manufactured according to Comparative Example 1 .

Test Example  4: Depending on the number of bends Metallic thin film  Measurement of resistance change

An aluminum thin film (thickness: 300 nm, length: 2 cm, width: 0.2 cm) was deposited on the flexible substrate laminate prepared in Example 2 and Comparative Example 1, and then bending and releasing were performed continuously with a bending radius of 1 mm And the resistance change of the aluminum thin film according to the number of bending was measured.

FIG. 4 is a schematic view of such a bending test, and FIG. 5 is a graph showing a result of measuring the resistance change of the aluminum thin film according to the number of bending times of the flexible substrate.

Referring to FIGS. 4 and 5, the aluminum thin film on the flexible substrate laminate produced according to Example 2 showed almost no resistance change even when the number of bending times increased. On the other hand, the aluminum thin film on the flexible substrate produced according to Comparative Example 1 increased in proportion to the resistance change as the number of bending times increased. The resistance of the aluminum thin film on the flexible substrate manufactured according to Comparative Example 1 was about 1.8 times larger than that of the graphene field effect transistor manufactured according to Example 1 when the number of bending times was 1,000 times.

Thus, it was found that the aluminum thin film on the scotch tape substrate produced according to Example 2 showed a slight decrease in performance of the device even when the number of bending times was increased, and the electrical characteristics were well maintained.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

Claims (7)

Flexible substrate; And
And a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate,
The ratio (G ₁ / G ₂₎ of the shear modulus (shear modulus, G ₂₎ of the shear modulus of the flexible substrate (shear modulus, G ₁₎ and the base material is to satisfy the following equation 1,
[Formula 1]
10 ² <G ₁ / G ₂ ≤ 10 ³
The flexible substrate laminate bended is characterized in that the surface strain (γ ₂ ) of the substrate is larger than the surface strain (γ ₁ ) of the flexible substrate,
The bending the flexible substrate laminate and the ratio (γ ₂ / γ ₁₎ of the surface strain (surface strain, γ ₂₎ with a surface strain (surface strain, γ ₁₎ of the flexible substrate of the base material satisfy the following formula (2) ,
[Formula 2]
1 &lt;? ₂ /? ₁ ? 10 ³
Wherein the substrate comprises a pressure-sensitive adhesive,
Flexible substrate laminate for transferring flexible electronic devices. The method according to claim 1,
Wherein the flexible substrate comprises a polymer. &Lt; RTI ID = 0.0 &gt; 11. &lt; / RTI &gt; 3. The method of claim 2,
Wherein the polymer is selected from the group consisting of polytetrafluoroethylene, polyimide, polyamide, polyester, polyethylene, polypropylene, polyester, polyurethane, polydimethylsiloxane, polyacrylate, polyarylate, Wherein the flexible electronic device is at least one selected from the group consisting of a flexible substrate and a flexible substrate. The method according to claim 1,
Wherein the pressure-sensitive adhesive comprises at least one of silicon, polyurethane, acrylic resin, epoxy resin, and polyimide. A flexible electronic device comprising a flexible substrate laminate comprising a flexible substrate and a substrate for reducing strain of the flexible substrate on one side of the flexible substrate,
The ratio (G ₁ / G ₂₎ of the shear modulus (shear modulus, G ₂₎ of the shear modulus of the flexible substrate (shear modulus, G ₁₎ and the base material is to satisfy the following equation 1,
[Formula 1]
10 ² <G ₁ / G ₂ ≤ 10 ³
The flexible substrate laminate bended is characterized in that the surface strain (γ ₂ ) of the substrate is larger than the surface strain (γ ₁ ) of the flexible substrate,
The bending the flexible substrate laminate and the ratio (γ ₂ / γ ₁₎ of the surface strain (surface strain, γ ₂₎ with a surface strain (surface strain, γ ₁₎ of the flexible substrate of the base material satisfy the following formula (2) ,
[Formula 2]
1 &lt;? ₂ /? ₁ ? 10 ³
Wherein the substrate comprises a pressure-sensitive adhesive,
Wherein the flexible substrate laminate is an adhesive tape,
Wherein the flexible electronic device is transferred onto another substrate using the adhesive tape and adhered thereto. 6. The method of claim 5,
Wherein the flexible electronic device is any one selected from a transistor, a solar cell, an organic light emitting diode, a tactile sensor, a radio wave identification tag, an electronic paper, and a biosensor. 6. The method of claim 5,
Wherein the flexible electronic device is a transistor,
The transistor
A flexible substrate laminate comprising a flexible substrate and a substrate for reducing the strain of the flexible substrate on one side of the flexible substrate;
A gate electrode on the flexible substrate laminate;
A gate insulating layer on the gate electrode;
A source electrode and a drain electrode on the gate insulating layer; And
An active layer between the source electrode and the drain electrode; Wherein the flexible electronic device comprises:

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