200816461 九、發明說明 【發明所屬之技術領域】 本發明係關於可撓性的薄型半導體裝置及其製造方 法。另外本發明係關於使用了該薄型半導體裝置之顯示裝 置° 【先前技術】 先前’半導體元件係因爲形成於玻璃基板或石英基板 等剛性高的基板上，所以半導體裝置本身剛性亦高，不能 具有可撓性。然而，可撓性的半導體裝置，係因爲對於具 有曲面的顯示器、而且更進而對於可折曲的顯示器之適用 等的適用範圍非常廣，所以近年被投注精力地硏究。 另外’因爲半導體裝置的薄型化，在能帶來半導體裝 置之輕量化的同時’對半導體裝置的可撓性實現亦密切地 發生關係，所以近年來成爲大的課題。 例如：於日本特開2003 _204049號公報（專利文獻 1 )’係開示：將接著材料作爲支持體，在接於前述接著材 料的絕緣膜上具備了元件作爲其特徵之半導體裝置和該半 導體裝置的製造方法。記載於該專利文獻1的半導體裝 置’係因爲將接著材料作爲支持體，所以可將總厚度變薄 至〇〇 μ@)，另外變爲可變輕總重量。在此，於接 者材料’係使用例如反應硬化型接著劑或熱硬化型接著劑 等。然而’該半導體裝置，係即使薄也是1〇〇μιη左右的 厚度，而具有某程度的可撓性，也就是，雖然能進行某程 200816461 度的彎曲，但該薄度及可撓性係不是可充分地滿足，並非 能折曲、折疊者。 如此，雖然實現能某種程度彎曲之半導體裝置，但現 在例如具有：即使被折疊亦不會塑性變形，也就是能回復 原來的形狀的程度的可撓性之半導體裝置係還沒有被實 現。 另外，於專利文獻1，係開示上述薄型半導體裝置的 製造方法， 其方法係槪略按照以下者。於第1基板上形成了含有 元件之被剝離層之後，以第1接著材料接著被剝離層與第 2基板’接著，剝離第1基板，以第2接著材料接著被剝 離層與第3基板而將被剝離層以第2基板與第3基板挾 持，接著，藉由溶媒而除去第1接著材料、或藉由光（紫 外光或雷射光等）而使第1接著材料的接著力下降而剝離 第2基板，而且藉由剝離第3基板而得到將第2接著材料 作爲支持體之半導體裝置。 然而，記載於上述專利文獻1的半導體裝置的製造方 法，係有：因爲將第2接著材料作爲支持體，所以有進行 合計3片的基板之接著、剝離等比較煩雜的工程之問題。 專利文獻1 ··日本特開2003-204049號公報 【發明內容】 [發明所欲解決的課題] 本發明，係爲用以解決上述課題而進行者，作爲其目 -6- 200816461 的’係提供：比先前的半導體裝置更薄型、理想係總厚度 爲3 Ομπι左右以下，而且即使使其彎曲、折曲、或是使 「擰轉」產生’特性亦不變化，可回復原來的形狀之半導 體裝置及該製造方法。 另外’本發明係提供：具備了包含上述薄型半導體裝 置的顯示部之顯示裝置，特別是顯示部可折曲的顯示裝 置。 [用以解決課題的手段] 本發明者們，係在：爲了實現超薄型、富有可撓性之 半導體裝置，只要使支持基板與先前比較而成爲非常薄即 可之發想之下，專心致力硏究關於製造在如此之非常薄的 基板上具有設置了元件之構造的半導體裝置之方法。該結 果，發現：於作業基板上設置剝離層，於此剝離層上形成 成爲支持基板之由高分子所構成的薄膜之後，藉由在該剝 離層的部分剝離除去作業基板而實現超薄型、而且可撓性 非常高的半導體裝置。而且，對於如此的超薄型而且高可 撓性的半導體裝置，係發現：若是在理想爲於表面進行了 撥水處理或親水處理之作業基板上設置支持基板，並在於 此支持基板上構築了各種元件之後，藉由機械性地剝離除 去作業基板，亦可實現。也就是，本發明係如以下所述。 本發明的半導體裝置，係以含有：由高分子所構成的 厚度爲20 μηι以下的支持層、和形成於該支持層上的元件 作爲其特徵。在此，該支持層的厚度爲ΙΟμπι以下爲較理 -7- 200816461 想。 在此，上述元件，係爲從由電晶體、有機電激發光元 件、液晶兀件、目Η憶體兀件、一極體、電阻元件、光電變 換元件、壓力感測器、具備有由氧化銦錫以及/又或是氧 化鋅所成之導電膜的元件而成之群中，所選擇的1種以上 之元件爲理想。 另外，上述支持層，係由聚亞醯胺、聚醯胺、矽樹脂 或乙烯酯樹脂所構成爲理想。 上述元件，係以厚度2 0 μ m以下的保護層被覆著亦 佳，在此情況，該保護層，係由乙烯酯樹脂或聚氨酯丙烯 酸酯樹脂所構成爲理想。 另外，本發明係提供：具備包含記載於上述任一項的 半導體裝置之顯示部的顯示裝置。在此，該顯示裝置，係 具有彎折部，在該彎折部係可彎曲或折曲，而且至少於該 彎折部具有顯示部亦佳。 而且本發明，係提供含有：於基板上，形成由鋁所構 成的剝離層之工程（A)、和於該剝離層上，形成由高分子 所構成的支持層之工程（B)、和於該支持層上，形成元件 之工程（C)、和藉由使用鹼性溶液而溶解該剝離層，而分 離該基板與該支持層之工程（D)，作爲其特徵之半導體裝 置的製造方法。 在此，該支持層的厚度爲1 〇nm以下爲理想。作爲上 述鹼性溶液，係可合適地使用含有以氫氧化四甲銨爲主的 溶液。 -8- 200816461 另外本發明係提供以包含有：在具有對於水之接觸角 爲80°〜110°的表面之基板上，形成由高分子所成之支持 層的工程（I );和在該支持層上形成元件的工程（Π );和 藉由施加機械性的力，來使該基板與該支持層分離的工程 (m)，作爲其特徵之半導體裝置之製造方法。 在此，該基板與該支持層的分離，係合適爲使用桿， 藉由捲取該支持層而進行。 作爲上述基板，可合適地使用具有使用矽烷耦合劑而 處理的表面之玻璃基板或矽基板。另外，可合適地使用在 表面具有由鋁所構成的層之基板。在後者的情況，該基 板，係具有以由矽樹脂或氟樹脂所構成的層、與由鋁所構 成的層之順序而具有之基板亦佳。 在上述本發明的半導體裝置之製造方法，支持層係理 想爲以20μπι以下的厚度形成，較理想爲以ΙΟμιη以下的 厚度形成。 上述支持層，係由聚亞醯胺、聚醯胺、矽樹脂或乙烯 酯樹脂所構成爲理想。 另外上述元件，係爲從由電晶體、有機電激發光元 件、液晶元件、記憶體元件、二極體、電阻元件、光電變 換元件、壓力感測器、具備有由氧化銦錫以及/又或是氧 化鋅所成之導電膜的元件而成之群中，所選擇的1種以上 之元件爲理想。 [發明的效果] -9 - 200816461 如藉由本發明，因爲係例如將具有ΙΟμηι以下的厚度 之支持層作爲支持體（支持基板），並於其上形成元件，所 以得到的半導體裝置，係與先前比較爲非常薄型。另外， 本發明的半導體裝置，係起因於其薄度而具有非常高的柔 韌性（flexibility)，故當然可使其彎曲，而且例如：以曲 率半徑0.1 mm範圍以下之非常小的曲率半徑折曲、使其 產生擰轉的情況，都不會塑性變形，而可回復原本的形 狀。另外，藉由如此般的折曲等的變形，亦無半導體裝置 的特性變化之情事。 如此的柔韌性非常高之半導體裝置，係可合適地使用 於顯示裝置。特別是，本發明的半導體裝置，係因爲即使 爲以非常小的曲率半徑折曲的情況，亦無特性變化或塑性 變形’所以可合適地使用於例如將顯示部作爲彎折部之翻 開型顯示裝置。 而且如藉由本發明的半導體裝置的製造方法，則將最 後成爲支持體（支持基板）之膜厚非常小的支持層，使用旋 轉塗佈法而可容易地形成，而且可容易地剝離作業基板。 因而’如藉由本發明的半導體裝置的製造方法，則可將超 薄型的半導體裝置，以簡便、少的工程數製造。 【實施方式】 <半導體裝置> 本發明的半導體裝置，係以含有：由高分子所構成的 厚度爲20 μηΐ以下、較理想爲ΙΟμηι以下的支持層、和形 -10- 200816461 成於該支持層上的元件作爲其特徵。如此地藉由將與先前 比較而非常薄的支持層作爲支持體（支持基板），可實現全 體爲非常薄之半導體裝置。如藉由本發明，則可將半導體 裝置的全體的厚度，作爲例如30 μηι以下。而且，如藉由 本發明，則亦可實現全體的厚度爲20 μπι以下、或10 μηι 以下的半導體裝置。 如此的半導體裝置之厚度的降低，係對半導體裝置帶 來柔韌性。 本發明的半導體裝置，係例如即使在曲率半徑0.1 mm 範圍以下之非常小的曲率半徑折曲的情況，亦不塑性變 形，而可回復原來的形狀。在此，所謂「不塑性變形」， 係意味著：在由外力而使半導體裝置變形時，不保持該變 形時的形狀，而回復原來的形狀。 在此，說明關於由外力之半導體裝置的變形與半導體 裝置的厚度之關係。若對半導體裝置施加例如：打算彎曲 半導體裝置的力，則在某曲率半徑p ，半導體裝置變形 (彎曲）。外力越大，則在越小的曲率半徑p ，半導體裝置 變形，但此時若是變形（彎曲）達到某程度之曲率半徑以 下，則半導體裝置會有塑性變形、而且被破壞。因而，爲 了對半導體裝置施加更高度的柔韌性，也就是，對於彎曲 等的變形施加更高的容許度，係需要更降低產生塑性變形 之最大曲率半徑Pi。 在此，曲率半徑p與因外力而於半導體裝置表面產生 歪斜ε之關係’若是令半導體裝置的全體的厚度爲h，則 -11 - 200816461 以下述式（1)表示。而且，「歪斜」係在表面長度爲L之 半導體裝置，由於外力而被彎曲時之該表面長度的變化 量，也就是，在伸長（或縮短）爲△ L的情況，以△ L/ L表 示。 P = h/ 2 e (1 ) 因而，若令無塑性變形的最大歪斜（稱爲：彈性界限 歪斜）爲ε 1，則上述ρι，係以下述式表示。而且，ε 1 係藉由構成半導體裝置的材料而決定之固有的値。 Ρ ι = h / 2 a i (2) 由上述式（2)，可理解爲了更爲降低半導體裝置的塑 性變形產生之最大曲率半徑p 1，係有變小半導體裝置之 全體的厚度h的必要。另外，可確認：對半導體裝置施加 外力，若達到有變形（彎曲）的曲率半徑以下，則半導體裝 置的特性變化。若令不產生如此的特性變化之最大的歪斜 爲ε 2，則爲了降低特性變化產生之最大曲率半徑p 2，係 有與上述式（2)同樣地變小半導體裝置全體的厚度h之必 要。在此，一般而言因爲ε2<ει，所以成爲ργρ]。 本發明的半導體裝置，係因爲將由高分子所構成的厚 度爲20 μιη以下、較理想爲10 μπι以下的支持層作爲支持 體（支持基板），所以全體的厚度係例如若爲30μιη以下， 則非常薄。如此地，因爲全體的厚度h小，所以本發明的 半導體裝置，係產生塑性變形的最大曲率半徑p i及產生 特性變化的最大曲率半徑P 2爲十分小，因而，即使彎 曲、折曲，作爲半導體裝置之特性變化或塑性變形亦不產 -12- 200816461 生。 接著’將本發明的半導體裝置，參照第1圖而詳細地 說明。第1圖係槪略的表示爲本發明的半導體裝置之理想 一例之電晶體之剖面圖。第1圖的半導體裝置，係將支持 層1 0 1作爲支持體（支持基板），於該支持層i 〇 1上，形成 由閘極電極102、閘極絕緣膜1〇3、源極電極104、汲極 電極105、活性層106所構成的電晶體元件。另外，該電 晶體元件，係以保護層1 〇 7被覆。如此地，本發明的半導 體裝置，係以由高分子所構成的非常薄的支持層1 0 1作爲 支持體（支持基板）作爲其特徵。 上述支持層101的厚度，係如上述地爲20 μιη以下。 因爲該支持層101的厚度越小，作爲全體而越薄的半導體 裝置更可實現，所以該支持層101的厚度，爲ΙΟμπι以下 爲理想。具體上爲Ιμιη左右〜ΙΟμηι。如此般地，藉由支持 層101的厚度作爲20μιη以下，理想係作爲ΙΟμπι以下， 可得：與先前比較柔韌性非常高，也就是，例如即使以曲 率半徑0 · 1 mm左右以下的非常小之曲率半徑折曲、使其 產生擰轉之情況，也不塑性變形，可回復原來的形狀之半 導體裝置。另外支持層101係由高分子構成。作爲高分 子，係具體上係可舉出聚亞醯胺、聚醯胺、矽樹脂、乙烯 酯樹脂等的聚合物。藉由使用如此的聚合物，例如使用旋 轉塗佈法等，成爲可容易地形成非常薄的層、同時有助於 半導體裝置的可撓性。在這些之中亦因爲耐熱性優良，所 以聚亞醯胺可更理想地使用。 -13- 200816461 在第1圖的半導體裝置’係於該支持層101上，形成 由閘極電極102、閘極絕緣膜103、源極電極1〇4、汲極 電極1 05、活性層1 06所構成的電晶體元件。作爲這些的 材料係可採用一般周知之物。例如：作爲閘極電極1 02， 係可舉出：鉻/金、PEDOT-PSS等的導電性高分子、 金、銀、銅等的導電性墨水等。 另外’作爲鬧極絕緣膜1 〇 3的材料，係例如氧化砂 (Si02)之外’可舉出·聚亞釀胺或砂樹脂等的聚合物等。 作爲聚亞醯胺，係例如可使用日立化成工業公司製PIX-8144、PIX-6400、日產化學工業公司製SE-812等。閘極 絕緣膜103的厚度係不特別限制，例如可作爲2μιη以 下。閘極絕緣膜爲由氧化矽（Si02)所構成的情況，其厚 度，爲例如：作爲〇 · 3 μ m以下爲理想。作爲源極電極1 〇 4 及汲極電極1 〇 5的材料，係可舉出例如：絡/金、 P ED Ο T-P S S等的導電性局分子、金、銀、銅等的導電性 墨水等。作爲活性層1 06的材料，係一般而言使用的無機 半導體材料以外，例如：亦可使用並五苯、聚塞吩 (polythiophene)、聚乙炔（poly acetyierle)等的有機半導體 材料。在這些之中’係從使用旋轉塗佈法、蒸鍍法等而可 容易地形成薄膜、可更提高半導體裝置的柔韌性等的理 由，理想地使用有機半導體材料。 另外，在第1圖的半導體裝置，係上述電晶體元件， 係以保護層1 〇 7被覆。保護層1 〇 7的厚度係不特別限定， 但爲了儘可能變小半導體裝置全體的厚度，所以作爲 -14- 200816461 2 0μηι範圍以下爲理想。保護層107的材料，係可採用先 前一般周知之物，例如可舉出：乙烯酯樹脂、聚氨酯丙烯 酸酯樹脂、矽樹脂、紫外線硬化樹脂等。更具體而言，係 可使用：聚乙嫌對苯二甲酸酯（PET)、聚奈二甲酸二乙酯 (PEN)、聚對苯二甲酸丁二酯、聚亞醯胺、聚醯胺、聚甲 Ιέ、聚酸醋、變性聚苯醜、聚楓（Poly Sul fone)、聚釀 颯（Polyethei: Sulphone)、聚苯硫 （polyphenylene sulfide)、芳香族聚酯、聚醯胺醯亞胺（Polyaniide-imide)、聚醚亞醯胺（p〇lyether imide )、聚醚酮 (Polyether ketone)、液晶聚合物、氟樹脂等的工程塑膠及 超級工程塑膠類、酚樹脂、尿素樹脂、三聚氰胺樹脂、不 飽和聚酯樹脂、環氧樹脂等的熱硬化性樹脂、聚乙烯、聚 丙烯、聚苯乙烯、聚氯乙烯、甲基丙烯酸樹脂、丙烯腈/ 丁二烯/苯乙烯樹脂（ABS樹脂）、丙烯腈/苯乙烯樹脂 (AS樹脂）等的汎用樹脂等。而且，本發明的半導體裝 置，係不必將保護層作爲必須。在此，在使半導體裝置彎 曲變形的情況，於半導體裝置產生歪斜，但此歪斜係在厚 度方向的中間位置附近最小。因而，上述元件係配置於該 厚度方向的中間位置附近爲理想。從如此的觀點，係在形 成保護層的情況，保護層的厚度，係以上述元件配置於半 導體裝置的厚度方向之中間位置附近的方式作爲厚度爲理 想。 以上，將本發明的半導體裝置，舉出以表示於第1圖 的電晶體作爲例子而說明，但包含於本發明的半導體裝置 -15- 200816461 之元件係不限於此， 形成於支持層上的元件，係在電晶體元件以外、爲有 機電激發光元件（有機EL元件）、液晶元件、記憶體元 件、二極體、電阻元件、光電變換元件、壓力感測器、具 備有由氧化銦錫以及/又或是氧化鋅所成之導電膜的元件 等亦佳，使這些2種以上組合的元件亦佳。這些元件，係 可使用先前周知的材料、先前周知的方法而形成於支持層 上。 <半導體裝置的製造方法> (第1實施形態） 接著，說明關於本發明的半導體裝置的製造方法之理 想的一例。本發明的半導體裝置的製造方法，係在基板 上，含有：形成由鋁所構成之剝離層的工程（A);和於該 剝離層上，形成由高分子所成之支持層的工程（B);和在 該支持層上，形成元件的工程（C);和藉由使用鹼性溶液 來溶解該剝離層，而將該基板與該支持層分離的工程（D) 作爲其特徵。如藉由本發明的半導體裝置的製造方法，則 可將於具有20μιη以下、理想爲ΙΟμηι以下的厚度之支持 層上形成元件之薄型半導體裝置，以容易、少的工程數製 作。 以下，將本實施形態的半導體裝置之製造方法，參照 第2圖而說明。第2圖係表示本發明的半導體裝置的製造 方法之理想一例之工程圖。在第2圖，係將在各工程的半 -16 - 200816461 導體裝置以槪略剖面圖表示。而且，第2圖係表示製作具 有電晶體元件的半導體裝置之例，但在具有如上述般相異 之元件的情況，基本上亦可適用相同的方法。 在本實施形態的半導體裝置的製造方法，首先準備基 板201。作爲基板201的材料，係可使用塑膠、玻璃、金 屬、陶瓷等各種的材料。基板2 0 1的厚度係不特別限制， 例如可作爲數百μπι〜數mm左右。然後，如第2(a)圖所示 地，於此基板201上形成剝離層202(工程（A))。在此剝離 層2 02係由鋁所構成的層，可藉由蒸鍍或濺鍍等的方法而 形成。剝離層202的厚度，係理想爲l〇nm以下。在比 1 Onm的厚的情況，係在之後的工程使用鹼性溶液而溶解 剝離層202時，有爲了使溶解達到充分的程度而需要非常 長時間之虞。剝離層202的厚度，係較理想爲5nm以 下、更理想爲1〜2 nm左右。 在接下來的工程，如第2(b)圖所示地，於上述剝離層 202上形成由高分子所構成的支持層203 (工程（B))。此支 持層203，爲最後成爲半導體裝置的支持體（支持基板）之 物。支持層203的厚度，係如上述地，理想爲20 μιη以 下。因爲該支持層203的厚度越小，則作爲全體而可實現 越薄的半導體裝置，所以該支持層203的厚度，爲 以下爲較理想。具體上爲1 μ»1左右〜1 Μ111。如此般地，藉 由支持層2 0 3的厚度作爲2 Ο μ m以下’理想係作爲1 Ο μ m 以下，可得··與先前比較柔韌性非常高’也就是’例如即 使以曲率半徑0 · 1 mm範圍以下的非常小之曲率半徑折 -17- 200816461 曲、使其產生擰轉之情況，也不塑性變形，可回復原來的 形狀之半導體裝置。另外支持層203係由高分子構成。作 爲高分子，係具體上係可舉出聚亞醯胺、聚醯胺、矽樹 脂、乙烯酯樹脂等的聚合物。藉由使用如此的聚合物，例 如使用旋轉塗佈法等，成爲可容易地形成非常薄的層、同 時有助於半導體裝置的可撓性。在這些之中亦因爲耐熱性 優良，所以聚亞醯胺可更理想地使用。支持層203，係理 想爲形成於基板201的全面或是大略全面。 接著，如第2(C)圖所示地，移至於上述支持層203 上形成元件的工程（工程（C))。在此，因爲構築電晶體元 件，所以使用先前周知的材料而藉由先前周知的方法，形 成了閘極電極204之後，形成閘極絕緣膜205。接著，使 用先前周知的材料而藉由先前周知的方法，形成了源極電 極2 0 6及汲極電極2 0 7之後，形成活性層2 0 8。接著，於 活性層2 0 8上形成保護層2 0 9。而且，形成保護層2 0 9的 工程係非必須的工程，而爲按照半導體裝置的用途等而可 適宜地設置。在此，元件係於同一基板上僅形成1個亦 佳，形成2個以上的元件亦佳。另外，上述閘極絕緣膜 205、活性層208及保護層209，係僅在基板201上的元 件被形成區域形成亦佳，或是形成於基板2 0 1全面亦佳。 此點，係即使在關於元件爲電晶體元件以外的元件之情 況，亦可相同地論述。 在接下來的工程，如第2(d)圖所示地，藉由使用鹼性 溶液而溶解剝離層202，分離基板201與支持層203，得 -18- 200816461 到將該支持層203作爲支持體（支持基板）之薄型半導體裝 置（工程（D))。作爲使用鹼性溶液而溶解剝離層2〇2的方 法，係因爲操作比較簡便，所以理想係使用將半導體裝置 浸漬於鹼性溶液的方法。浸漬溫度係不特別限制，例如爲 0〜100 °C左右。較理想爲20〜5 (TC。另外，浸漬時間亦不 特別限制，可進行至剝離層2 0 2充分地溶解，基板2 0 1與 支持層203分離。典型上係數十分〜數小時左右。而且， 基板201與支持層203的分離，係藉由將半導體裝置浸漬 於鹼性溶液，放置至基板201與支持層203經過全面分離 而進行亦佳，又或是，倂用··從藉由向鹼性溶液的浸漬而 基板20 1已一部分剝離的部分，使鹼性水溶液等的噴射 流，噴出至基板201與支持層203的界面等的剝離促進手 段亦佳。 鹼性溶液，係如爲溶解鋁者爲佳，不特別限制。具體 而言’可使用氫氧化鈉等的鹼金屬氫氧化物的溶液、光蝕 刻用 TMAH(Tetramethyl ammonium hydroxide)系顯像液 等’而在這些之中TMAH系顯像液被理想地使用。該顯 像液，係主要是含有氫氧化四甲銨之水溶液。在將如此的 TMAH系顯像液作爲本工程的鹼性溶液而使用的情況，顯 像液中的氫氧化四甲銨的濃度，係例如爲1〜20質量％左 右。 (第2實施形態） 接著，說明關於本發明的半導體裝置的製造方法之另 -19- 200816461 外理想的一例。該半導體裝置之製造方法係以包含有：在 具有對於水之接觸角爲8 0 °〜1 1 0 °的表面之基板上，形成 由高分子所成之支持層的工程（I );和在該支持層上形成 元件的工程（Π );和藉由施加機械性的力，來使該基板與 該支持層分離的工程（ΙΠ )，作爲其特徵。如藉由如此的製 造方法，則可將於理想爲具有1 Ομιη以下的厚度之支持層 上形成元件之薄型半導體裝置，以容易、少的工程數製 作。另外，與上述第1實施形態比較，在剝離基板時的處 理成爲較容易。而且，亦可對應作業基板的更大面積化。 以下，將本實施形態的半導體裝置之製造方法，參照 第3圖而說明。第3圖係表示本發明的半導體裝置的製造 方法之另外理想一例之工程圖。在第3圖，係將在各工程 的半導體裝置以槪略剖面圖表示。而且，第3圖係表示製 作具有電晶體元件的半導體裝置之例，但在具有如上述般 相異之元件的情況，基本上亦可適用相同的方法。 在本實施形態的半導體裝置的製造方法，首先準備基 板301。基板301係具有對水的接觸角爲80°〜110°的表 面。該表面之對水的接觸角，係理想爲85°〜95°。在對水 的接觸角爲未滿80°的情況，係該基板表面與支持層的密 接性變得過高，基板的剝離變得困難。另外，在對水的接 觸角超過1 1 0 °的情況，因爲撥水性過高，所以將支持層具 有適度的密接性而形成係爲困難。在基板與支持層沒有適 度的密接性的情況，在於支持層上形成元件的工程（例 如：使用有機溶劑的工程或進行超音波處理的工程等）， -20- 200816461 有產生基板與支持層之予想之外的分離之虞。藉由將基板 表面之對水的接觸角作爲80°〜110°，可防止在元件形成時 的予想之外之基板的剝離、同時成爲可在所予定的時機， 進行基板之機械性的剝離。基板的大小，係不特別限制， 如藉由本實施形態的方法，則可使用大面積的基板。 而且，在本發明，基板表面之對水的接觸角，係在溫 度20°C、相對濕度40%的條件下，將0.01ml的水滴滴下 至基板表面上，從正側方以數位相機攝影之後，在電腦上 畫出切線而得之接觸角。 基板3 0 1的厚度係不特別限制，例如可作爲數百μηι〜 數mm左右。另外，作爲基板3 01的材料，係不特別限 定，但例如可使用：玻璃，矽（S i )、矽樹脂、氟樹脂、聚 乙烯對苯二甲酸酯（PET)、聚奈二甲酸二乙酯（PEN)、聚對 苯二甲酸丁二酯、聚氯乙烯（PVC)、聚苯乙烯（PS)、甲基 丙烯酸樹脂、丙烯腈/ 丁二烯/苯乙烯樹脂（ABS樹脂）、 丙烯腈/苯乙烯樹脂（AS樹脂）、聚亞醯胺、聚醯胺、聚 甲醛、聚碳酸酯、變性聚苯醚、聚颯（Poly Sulfone)、聚 魅楓 （P 〇 1 y e t h e r S u 1 p h ο n e)、聚苯硫（polyphenylene sulfide)、芳香族聚酯、聚醯胺醯亞胺（Polyamide-imide)、聚醚亞醯胺（p〇lyether imide )、聚醚酮 (Polyether ketone)、液晶聚合物等的工程塑膠及超級工程 塑膠類、酚樹脂、尿素樹脂、三聚氰胺樹脂、不飽和聚酯 樹脂、環氧樹脂、聚乙烯、聚丙烯等。作爲氟樹脂，係例 如：可舉出聚四氟乙烯等。在此，按照使用的基板材料， -21 - 200816461 以基板表面的接觸角成爲上述範圍的方式，例如施加以以 下所示般的處理於基板表面爲理想。 例如：在基板材料，爲玻璃、矽（Si)等的情況，係如 基板表面的接觸角成爲上述範圍般地，撥水處理表面爲理 想。作爲撥水處理劑，例如：可使用先前周知的矽烷耦合 劑，作爲矽烷耦合劑，係例如：可舉出六甲基二矽胺烷 (Hexamethyldisilazane ) (HMD S )、3 -胺丙基三乙氧基矽 烷、3-縮水甘油醚基丙基三甲氧基矽烷、雙（3_(三乙氧基 矽基）丙基）二硫化物、乙烯三乙醯氧基矽烷、甲基丙烯氧 基丙基三甲氧基矽烷、3 -丙烯氧基丙基三甲氧基矽烷、3-氫硫基丙基三甲氧基矽烷、N-(l，3 -二甲基亞丁基）-3 -胺丙 基三乙氧基矽烷、η-辛二甲基氯矽烷、二烯丙基二甲基矽 烷、四乙氧基矽烷、二苯基二甲氧基矽烷、三氟丙基三甲 氧基矽烷、甲基三氯矽烷等。其中，六甲基二矽胺烷 (HMD S )，係因爲可施力ρ上述理想的接觸角所以爲理想。 使用矽烷耦合劑的撥水處理的溫度，亦根據使用的矽 烷耦合劑的種類，而例如可作爲100〜200 °C左右、理想爲 110〜160 °C左右、更理想爲120〜150 °C左右。在未滿100 °C，係不能作充分的撥水處理，基板與支持層的密接性過 高，基板的剝離爲困難。另外，若撥水處理溫度超過200 °C，則因爲基板的撥水性變得過高，所以支持層的形成變 得困難、或是有矽烷耦合劑本身進行分解之虞。撥水處理 時間，例如可作爲數秒〜數小時，但爲了施加適切的接觸 角，係作爲1分〜數十分左右爲理想，作爲1〜10分左右爲 -22- 200816461 較理想。更理想爲3〜5分左右。 作爲使用了矽烷耦合劑之撥水處理的具體的方法，係 不特別限制，但例如可舉出：在使基板的一表面接觸矽烷 耦合劑的狀態，將該基板使用加熱板等而加熱的方法。 另外，在基板材料爲矽樹脂、氟樹脂等的情況，係以 使基板表面的接觸角成爲上述範圍般地，親水處理表面爲 理想。作爲親水處理之具體的方法，係例如可舉出：於基 板上形成由鋁所構成的層之方法。由此，可得具有對水的 接觸角爲80°〜110°左右的表面之基板。鋁層，係可藉由蒸 鍍或濺鍍等的方法而形成。鋁層的厚度係不特別限制，例 如可作爲1〜l〇nm左右、理想係作爲1〜5nm左右。 在基板材料爲玻璃等的情況，取代使用上述撥水處理 劑，爲了使表面的親水性下降，形成上述的鋁層亦佳。由 此，基板表面的親水性下降，可比較容易地進行形成在鋁 層上的支持層與基板之分離。而且，在玻璃基板等的基板 表面上直接形成鋁層之情況，係藉由依照上述第1實施形 態的方法，可進行基板的剝離。 另外，於玻璃基板等的基板表面上，形成由矽樹脂或 氟樹脂所構成的層，於其上形成由鋁所構成的層亦佳。由 此，比起於玻璃基板等的基板表面上直接形成鋁層的情 況’可更變大表面的接觸角，作爲可機械性的剝離之表 面’可使更理想的表面狀態形成。由矽樹脂或氟樹脂所構 成的層，係可使用溶解了該樹脂的溶液而藉由旋轉塗佈法 而形成。由矽樹脂或氟樹脂所構成的層之厚度，係儘可能 -23- 200816461 地薄爲理想，例如可作爲800nm以下、較理想爲未滿 6 0 0ntn。在超過800nm的厚度，係在形成於大面積的基板 上之支持層上，形成由聚亞醯胺或矽樹脂等的聚合物所構 成的閘極絕緣膜時之烘烤工程，有在該絕緣膜產生龜裂， 由此而處於不能得到良好的元件特性之傾向。 在上述的基板之表面處理方法之中，係爲了於大面積 的基板上，亦不使其產生龜裂等之可形成多層膜，所以將 玻璃、矽（Si)等的基板表面，使用撥水處理劑而處理的方 法爲較理想。 在本實施形態，係於具有上述特定的接觸角之基板 301上，形成由高分子所構成的支持層3 03 (工程（I)，參照 第3(a)圖）。關於支持層的厚度、材質等，係與上述第1 實施形態的情況相同，在此從略。支持層3 03，係理想爲 形成於基板301的全面或是大略全面。 接著，如第3(b)圖所示地，移至於上述支持層3 03上 形成元件的工程（工程（Π ))。在本實施形態，係因爲構築 電晶體元件，所以使用先前周知的材料而藉由先前周知的 方法，形成了閘極電極304之後，形成閘極絕緣膜3 05。 接著，使用先前周知的材料而藉由先前周知的方法，形成 了源極電極306及汲極電極3 07之後，形成活性層3 08。 接著，於活性層308上形成保護層3 09。而且’形成保護 層309的工程係非必須的工程’應該fee照半導體裝置的用 途等而可適宜地設置。在此，元件係於同一基板上僅形成 1個亦可，形成2個以上的元件亦佳。另外，上述閘極絕 -24- 200816461 緣膜3 05、活性層3 0 8及保護層3 09，係僅在基板301上 的元件被形成區域形成亦可，或是形成於基板301全面亦 佳。此點，係即使在關於元件爲電晶體元件以外的元件之 情況，亦可相同地論述。 在接下來的工程，如第3(c)圖所示地，藉由施加機械 性的力，分離基板 3 03與支持層3 03，得到將該支持層 303作爲支持體（支持基板）之薄型半導體裝置（工程（皿））。 作爲施加機械上的力之手段，係只要可剝離基板，就不特 別限制，但從處理容易之點、亦可對應大面積的基板之 點、元件部的破壞等難以產生之點來看，可理想地採用： 使用桿而捲取支持層3 03的方法。以下，說明使用桿之基 板的剝離方法的細節。 第4圖係表示使用桿之基板的剝離方法的一例之模式 圖。而且，劃在第4圖的支持層3 03上的梳齒狀的區域， 係表示形成源極電極及汲極電極的區域。該方法，係如第 4圖所示，將形成於基板3 0 1上而具備元件的支持層 3〇3，藉由捲取於剖面形狀爲圓形或略圓形之桿401，而 分離支持層3 0 3與基板3 0 1者。在桿剖面爲圓形的情況， 其剖面的半徑係例如：可作爲0.1〜l〇mm左右。本發明的 半導體裝置，係具有高的柔韌性，即使以小的曲率半徑揉 成團狀、折曲，亦可回復原來的形狀，而且難以產生元件 特性的變化。因而，桿的剖面半徑，亦可作爲例如： 0.1〜2 mm左右。桿401的材質，係不特別限制，可使用 例如：不鏽鋼等的金屬、塑膠等。 -25- 200816461 爲了使被形成至基板301的端部爲止之支持層3 03之 最初的分離容易進行，所以例如：如第4圖所示地，在使 用桿401而捲取之前，事先於支持層3 03的端部，使用黏 著膠帶或黏著劑等而接著輔助薄膜402，並從輔助薄膜 4〇2開始捲取，接著進行支持層3 03的捲取亦佳。作爲輔 助薄片，係可使用各種樹脂薄膜。另外，在支持層3 03的 捲取時，在保護支持層3 03上的元件等的目的上，亦可於 形成了元件的支持層303上，事先先舖上樹脂薄膜等，再 與該樹脂薄膜一起捲取。而且，在捲取支持層3 03時，係 亦可倂用：使水或熱水等的噴射流，噴出於基板3 0 1與支 持層3 03的界面等之剝離促進手段。 支持層3 03的捲取方向，係不特別限制，例如第4圖 所示地，對於源極電極及汲極電極形成的通道，以桿40 1 成爲平行的方式，配置桿40 1而捲取亦佳、又以對於該通 道，桿401成爲垂直的方式配置桿401而捲取亦佳。或 是，從基板3 0 1任一個角部，對該通道於斜的方向進行捲 取亦佳。爲了使捲取前後的元件特性變化較小，捲取係以 對通道而垂直或略垂直地進行爲理想。而且，所謂「對通 道平行」及「對通道垂直」，係意味著：對於形成在源極 電極-汲極電極之間的通道之通道長方向，各別平行、垂 直。 被桿401所捲取之具有元件的支持層3〇3，係因爲柔 韌性高、容易回復原來的形狀（薄片狀），所以可容易地從 桿401取下。 -26- 200816461 使用了上述桿之本發明的半導體裝置的製造方法，係 於大面積的基板亦可對應，而且基板的剝離作業爲容易、 於剝離工程不需要複雜的設備。如此的半導體裝置的製造 方法，係對製造程序的自動化爲非常有利。也就是，被自 動化的製造程序，係例如含有：拉出被捲取至滾筒狀的基 板，按照必要而將表面進行撥水處理或親水處理之表面處 理工程、於已處理的表面上形成支持層及元件之元件形成 工程、及將形成了元件之支持層捲取至桿上之工程。此 時，已被剝離的基板，係可再度捲取至滾筒狀，反覆使 用。 <顯示裝置> 本發明的半導體裝置，係可作爲各式各樣的顯示裝置 的顯示部之構成零件而合適地使用。在此，所謂顯示裝 置，係指具備了表示畫像或文字等的顯示部之一切電子機 器。作爲如此的電子機器，係例如可舉出：攜帶式電話、 可攜式電腦等的攜帶式資訊終端、個人電腦、攝影機、數 位相機、汽車導航系統、投影機、汽車音響、具備顯示部 之家電製品等，但不限定於此。本發明的半導體裝置係因 爲爲薄型、同時柔韌性非常高、折曲、擰轉等的變形自 在，所以特別是，具有彎折部的顯示裝置，係可合適地使 用於在該彎折部可彎曲或折曲、而且至少於該彎折部具有 顯示部之顯示裝置。在此，所謂「彎折部」，係稱：顯示 裝置的一部分，在折曲或彎曲該顯示裝置的情況時，被折 -27- 200816461 曲或彎曲的部分。作爲如此的顯示裝置，係例如可舉出： 所謂電子紙或電子書籍等，但不制限於這些。 以下，舉出實施例而更詳細地說明本發明，但本發明 係不限定於這些。 <半導體裝置的製作> <實施例1> 藉由以下的方法而製作具有電晶體元件的半導體裝 置。參照第2圖而說明。於厚度1 mm的平坦性高的玻璃 基板201，蒸鍍2nm鋁，形成了剝離層202。接著，於剝 離層202上使用溶液狀的聚亞醯胺（日立化成工業公司製 PIX_8144)而藉由旋轉塗佈法而形成了厚度5μηι的薄膜之 後，以l〇〇°C 1小時進行乾燥，接著藉由在250°C 進行 1小時加熱處理而形成支持層2 0 3。 接著，形成用以製作閘極電極之剝離（lift-off)用抗蝕 圖案，藉由蒸鍍法而成膜鉻lnm、接下來蒸鍍金50nm之 後，藉由以丙酮而進行剝離，形成閘極電極204。接著， 使用溶液狀的聚亞醯胺（日立化成工業公司製PIX-8 144)而 藉由旋轉塗佈法而成膜之後，以1 00 °C 1小時進行乾 燥，接著藉由在250°C 進行1小時加熱處理而形成厚度 2 μιη的閘極絕緣膜205。接著，藉由微影蝕刻而形成了源 極電極、汲極電極圖案之後，蒸鍍鉻1 mm、接下來蒸鍍 金50nm，藉由剝離（lift-off)法而形成源極電極206及汲 極電極207。接著，作爲活性層208而藉由將爲有機半導 -28- 200816461 體材料之並五苯，以50nm的厚度蒸鍍’完成有機電 元件部。而且，在本實施例不設置保護層209。 接著，將具有所得到的基板201之半導體裝置， 在室溫約1小時，浸漬於光蝕刻用顯像液（Rohm and Company製 MFCD-26)而剝離基板201 ’得到全體 度爲約7μπι的有機半導體裝置。 將此半導體裝置以曲率半徑0 · 1 mm折曲之後， 不產生塑性變形，回復原來的平面形狀。 <實施例2> 在進行基板201的剝離之前，於活性層208上’ 使用了乙烯酯樹脂_之旋轉塗佈法而形成厚度5 μπι的 層2 09以外，係與實施例1同樣地進行而製作全體的 爲約12μιη的有機半導體裝置。將此半導體裝置以曲 徑0.1mm折曲之後，結果不產生塑性變形，回復原 平面形狀。 <實施例3> 藉由以下的方法而製作具有電晶體元件的半導 置。參照第3圖而說明。首先，將長寬50x50mm、 1.1 mm的玻璃基板301載置於加熱板上，將讓六甲 矽胺烷（HMDS )滲入了的脫脂棉載置於基板301，而 其上蓋上培養皿。接著，藉由加熱板而以1 5 (TC 5 加熱，進行HMDS處理。已被HMDS處理的基板表 晶體 藉由 Haas 的厚 結果 藉由 保護 厚度 來的 體裝 厚度 基二 且於 分鐘 面之 -29- 200816461 對水的接觸角，係藉由上述的方法而測定後，結果爲92° 〇 接著，在已HMDS處理的基板表面上，使用溶液狀的 聚亞醯胺（日立化成工業公司製PIX-8 144)而藉由旋轉塗佈 法（1 0 0 0 r p m 3秒、3 0 0 0 r p m 6 0秒）而形成了厚度約3 μ m 的薄膜之後，以l〇〇°C 1小時進行乾燥，接著藉由在250 °C 進行1小時加熱處理而形成支持層3 03 (參照第3(a) 圖）。接著，形成用以製作閘極電極之剝離（lift-off)用抗 蝕圖案，藉由蒸鍍法而成膜鉻1.2 nm、接下來蒸鍍金 3 Onm之後，藉由以丙酮而進行剝離，形成閘極電極 3 04。接著，使用溶液狀的聚亞醯胺（日產化學工業公司製 SE-812)而藉由旋轉塗佈法（ 1 000 rpm 3秒、5000 rpm 60秒）而成膜之後，以l〇〇°C 1小時進行乾燥，接著藉由 在25 0°C 進行1小時加熱處理，形成厚度約600nm的閘 極絕緣膜3 0 5。接著，藉由微影蝕刻而形成了源極電極、 汲極電極圖案之後，蒸鍍鉻 1.2nm、接下來蒸鍍金 30nm，藉由剝離（lift-off)法而形成源極電極306及汲極電 極3 07。通道（channel)長（L)係作爲20μιη、通道寬（W)係 作爲78mm。接著，作爲活性層3 0 8而藉由將爲有機半導 體材料之並五苯，以50nm的厚度蒸鍍，完成有機電晶體 元件部。而且，在本實施例不設置保護層3 09。第5圖係 槪略地表示形成於基板3 0 1上的有機電晶體元件之立體 圖。而且，在第5圖，活性層3 0 8係從略。如第5圖所示 地源極電極3 0 6及源極電極3 0 7，係各別具有梳齒狀，各 •30 - 200816461 梳齒的重疊部分的長度，係設爲2mm。另外，與第5圖 的槪略圖不同，梳齒的支數，係源極電極306及汲極電極 3 07各別爲 20支。因而，通道寬（W)係成爲 2mm X 20(支）-2mm = 78mm(兩瑞的2mm係因爲不重疊所以作 爲-2mm)。將形成於如以上般的基板301上之有機電晶體 元件，合計製作6個。 接著，關於上述6個之中的3個元件，各別使用剖面 半徑爲2mm、1mm、0.5mm的不鏽鋼製圓柱狀桿，進行支 持層303的捲取，分離支持層303與基板301。關於這些 3個元件，係捲取方向係如第6圖所示地，儘量作到對通 道成爲平行。一方面，關於剩下的3個元件，同樣使用剖 面半徑爲2mm、1mm、0.5mm的不鏽鋼製圓柱狀桿，以捲 取方向對通道成爲垂直的方式捲取支持層3 03，分離支持 層3 0 3與基板3 0 1。 關於上述6個元件，將捲取前後的電流-電壓特性表 示於第7圖及第8圖。第7圖爲在捲取方向對通道平行的 情況之捲取前及捲取結束時（也就是，基板剝離前後）的電 流-電壓特性之線圖、第7(a)圖爲表示剝離基板前的電流-電壓特性之線圖、第7(b)〜（d)圖係各別表示在使用剖面半 徑爲2mm、1mm、0.5mm的圓柱狀桿而進行捲取時的捲取 結束時之電流-電壓特性之線圖。同樣地第8圖爲在捲取 方向對通道垂直的情況之捲取前及捲取結束時（也就是， 基板剝離前後）的電流-電壓特性之線圖、第8(a)圖爲表示 剝離基板前的電流-電壓特性之線圖、第8(b)〜（d)圖係各 -31 - 200816461 別表示在使用剖面半徑爲2mm、1mm、0.5mm的圓柱狀桿 而進行捲取時的捲取結束時之電流-電壓特性之線圖。第 7圖及第8圖的各線圖，係將閘極電壓（vd)作爲+2〇〜 -60V(10V間隔）、將汲極—源極電壓作爲+20〜-60V(2V間 隔）時之資料。 如於第7圖及第8圖可見地，了解：在基板剝離前 後，雖然可見若干的汲極電流之下降，但本發明的半導體 裝置係可充分地實用化。另外，在對於通道在垂直方向捲 取的情況，係了解：不依存於桿的半徑，而顯示出大略一 定之電流、電壓特性。此係代表：藉由對通道在垂直方向 捲取，即使爲捲取時的支持層之曲率非常小的情況，亦不 對元件帶來不良影響，而可剝離基板。而且，在上述實施 例，係爲了評估基板剝離時的元件特性，所以測定在支持 層捲取結束時的電流-電壓特性，但第8圖的結果’因爲 在桿徑十分大的情況與十分小的情況，亦顯示元件特性並 不變化，所以可容易地推測：在支持層捲取結束時的電 流-電壓特性，係實質上，與將支持層從桿取下’回復原 來的形狀（薄片狀）時的電流-電壓特性表示同等的値。而 且，在將具有已捲取了元件之支持層從桿取下之後’係回 復平面形狀。 <實施例4> 藉由以下的方法而製作具有電晶體元件的半導體裝 置。參照第3圖而說明。首先，於長寬50x5 0mm、厚度 -32- 200816461 l.lmm的玻璃基板301上使用55 wt%的矽樹脂溶液（Dow Corning Toray 公司製 SILPOT 184 W/C)而藉由旋轉塗 佈法（1 0 0 0 r p m 3秒、5 0 0 0 r p m 6 0秒）而形成了厚度約6 0 0 nm的薄膜之後，使用加熱板而在150°C 1〇分鐘進行烘 烤。接著，於該矽樹脂層上，將鋁以1 nm的厚度蒸鍍。 .接著，在形成了矽樹脂層及銘層的基板表面上，使用 溶液狀的聚亞醯胺（日立化成工業公司製PIX-8 144)而藉由 旋轉塗佈法（3 000 rpm)而形成了厚度約2 .3μιη的薄膜之 後，以l〇〇°C 1小時進行乾燥，接著藉由在250°C 進行 1小時加熱處理而形成支持層3 0 3 (參照第3(a)圖）。接 著，形成用以製作閘極電極之剝離（lift-off)用抗蝕圖案， 藉由蒸鍍法而成膜鉻1.2 nm、接下來蒸鍍金30nm之後， 藉由以丙酮而進行剝離，形成閘極電極3 04。接著，使用 溶液狀的聚亞醯胺（日立化成工業公司製PIX-8144)而藉由 旋轉塗佈法（5 0 0 0 r p m)而形成了厚度2 . 3 μ m的薄膜之後， 使用惰性烘箱（Inert Oven)在200°C 30分鐘進行乾燥，接 著藉由在25 0 °C 進行1小時加熱處理而形成厚度約2 . 3 μιη的閘極絕緣膜3 05。接著，藉由微影鈾刻而形成了源 極電極、汲極電極圖案之後，蒸鍍鉻1.2nm、接下來蒸鍍 金30nm，藉由剝離（lift-off)法而形成源極電極3 06及汲 極電極3 07。通道（channel)長（L)係作爲20μιη、通道寬（W) 係作爲78mm。接著，作爲活性層3 0 8而藉由將爲有機半 導體材料之並五苯，以50nm的厚度蒸鍍，完成有機電晶 體元件部。而且，在本實施例不設置保護層309。 -33- 200816461 接著，使用剖面半徑爲5mm的不鏽鋼製圓柱狀桿’ 進行支持層303的捲取，分離支持層303與基板301。捲 取係可容易地進行。另外，在將具有已捲取了元件之支持 層從桿取下之後，結果回復平面形狀。 應可知：此次開示之實施形態及實施例係在全部的點 爲例示而非限制之物。本發明的範圍係並非上述的說明， 而是由申請專利範圍來表示，意圖含有與申請專利範圍均 等的意義及範圍內之全部的變更。 【圖式簡單說明】 [第1圖]槪略的表示爲本發明的半導體裝置之理想一 例之電晶體之剖面圖。 [第2圖]係表示本發明的半導體裝置的製造方法之理 想一例之工程圖。 [第3圖]係表示本發明的半導體裝置的製造方法之另 外理想一例之工程圖。 [弟4圖]表不使用桿之基板的剝離方法的一例之模式 [第5圖]槪略地表示形成於基板上的有機電晶體元件 之立體圖。 [第6圖]表示使用桿之支持層的捲取之捲取方向的一 例之立體圖。 [第7圖]表示在捲取方向爲對通道平行之情況的捲取 前及捲取結束時（也就是，基板剝離前後）之電流-電壓特 -34- 200816461 性之線圖。 [第8圖]表示在捲取方向爲對通道垂直之情況的捲取 前及捲取結束時（也就是，基板剝離前後）之電流-電壓特 性之線圖。 【主要元件符號說明】 1 0 1 :支持層 1 0 2 :閘極電極 103 :閘極絕緣膜 1 〇 4 :源極電極 1 〇 5 :汲極電極 1 〇 6 :活性層 107 :保護層 2 0 1 :基板 2 0 2 :剝離層 2 0 3 :支持層 2 0 4 :閘極電極 205 :閘極絕緣膜 2 0 6 :源極電極 2 0 7 :汲極電極 2 0 8 :活性層 209 :保護層 301 :基板 3 〇 3 :支持層 -35- 200816461 3 0 4 :鬧極電極 3 05 :閘極絕緣膜 3 0 6 :源極電極 3 0 7 :汲極電極 3 0 8 :活性層 3 09 :保護層 401 :桿 402 :輔助薄膜 -36-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible thin semiconductor device and a method of manufacturing the same. Further, the present invention relates to a display device using the thin semiconductor device. [Prior Art] The conventional semiconductor device is formed on a highly rigid substrate such as a glass substrate or a quartz substrate, so that the semiconductor device itself has high rigidity and cannot have a flexibility. However, flexible semiconductor devices have been widely used in recent years because they have a wide range of applications for displays having curved surfaces and, more particularly, for flexible displays. In addition, the thickness of the semiconductor device is reduced, and the flexibility of the semiconductor device can be brought into close contact with each other. Therefore, it has become a major problem in recent years. For example, Japanese Laid-Open Patent Publication No. 2003-204049 (Patent Document 1) discloses a semiconductor device having an element as a support and a semiconductor device having an element as a support, and a semiconductor device. Production method. In the semiconductor device described in Patent Document 1, since the adhesive material is used as the support, the total thickness can be reduced to 〇〇 μ@), and the total light weight can be changed. Here, for example, a reactive hardening type adhesive or a thermosetting type adhesive is used for the material of the connector. However, the semiconductor device is thinner at a thickness of about 1 μm, and has a certain degree of flexibility, that is, although a certain degree of bending of 200816461 degrees can be performed, the thinness and flexibility are not Can be fully satisfied, not able to bend, fold. As described above, although a semiconductor device which can be bent to some extent is realized, it has been realized, for example, that a flexible semiconductor device which does not plastically deform even if it is folded, that is, can return to its original shape has not been realized. Further, Patent Document 1 discloses a method of manufacturing the above-described thin semiconductor device, and the method is as follows. After the peeled layer containing the element is formed on the first substrate, the first substrate is followed by the peeled layer and the second substrate ′, and the first substrate is peeled off, and the second adhesive material is followed by the peeled layer and the third substrate. The peeled layer is sandwiched between the second substrate and the third substrate, and then the first adhesive material is removed by a solvent, or the adhesion of the first adhesive material is lowered by light (such as ultraviolet light or laser light). In the second substrate, a semiconductor device in which the second bonding material is used as a support is obtained by peeling off the third substrate. However, the method of manufacturing the semiconductor device described in the above-mentioned Patent Document 1 has a problem that the second bonding material is used as a support, and there is a problem that the three substrates are bonded and peeled off in a relatively complicated manner. [Problem to be Solved by the Invention] The present invention has been made to solve the above problems, and is provided as a "system" of the item -6-200816461. : a semiconductor device that is thinner than the conventional semiconductor device, preferably has a total thickness of about 3 Ομπι or less, and can be restored to the original shape even if it is bent, bent, or "turned" to produce a characteristic that does not change. And the manufacturing method. Further, the present invention provides a display device including a display portion including the above-described thin semiconductor device, and in particular, a display device in which a display portion can be bent. [Means for Solving the Problem] The inventors of the present invention have focused on the realization that the support substrate is extremely thin compared to the prior art in order to realize an ultra-thin and flexible semiconductor device. Efforts have been made to investigate a method of manufacturing a semiconductor device having a structure in which components are disposed on such a very thin substrate. As a result, it was found that a peeling layer is provided on the work substrate, and a film made of a polymer serving as a support substrate is formed on the peeling layer, and then the work substrate is peeled off and removed from the peeling layer to realize an ultra-thin type. Moreover, the semiconductor device has a very high flexibility. Further, in such an ultra-thin and highly flexible semiconductor device, it has been found that a support substrate is provided on a work substrate which is desirably subjected to water repellent treatment or hydrophilic treatment on the surface, and is constructed on the support substrate. After the various components, the work substrate can be removed by mechanical peeling. That is, the present invention is as follows. The semiconductor device of the present invention is characterized by comprising a support layer having a thickness of 20 μm or less composed of a polymer and an element formed on the support layer. Here, the thickness of the support layer is ΙΟμπι or less, which is more reasonable than -7-200816461. Here, the above-mentioned elements are obtained by a transistor, an organic electroluminescence element, a liquid crystal element, a memory element, a pole body, a resistance element, a photoelectric conversion element, a pressure sensor, and an oxidation device. Among the group of indium tin and/or a component of a conductive film made of zinc oxide, one or more selected elements are preferable. Further, the above support layer is preferably composed of polyamine, polyamine, an anthracene resin or a vinyl ester resin. It is also preferable that the above-mentioned element is coated with a protective layer having a thickness of 20 μm or less. In this case, the protective layer is preferably composed of a vinyl ester resin or a urethane acrylate resin. Furthermore, the present invention provides a display device including the display unit of the semiconductor device described in any one of the above. Here, the display device has a bent portion which is bendable or bendable, and at least the bent portion has a display portion. Further, the present invention provides a process (A) for forming a release layer made of aluminum on a substrate, and a process (B) for forming a support layer made of a polymer on the release layer, and On the support layer, a component (C) for forming a device, and a method for manufacturing a semiconductor device characterized by dissolving the release layer by using an alkaline solution and separating the substrate and the support layer (D). Here, it is preferable that the thickness of the support layer is 1 〇 nm or less. As the above alkaline solution, a solution containing tetramethylammonium hydroxide as a main solution can be suitably used. -8- 200816461 Further, the present invention provides an engineering (I) for forming a support layer made of a polymer on a substrate having a surface having a contact angle of water of 80° to 110°; An engineering (m) for forming a component on a support layer; and a process (m) for separating the substrate from the support layer by applying a mechanical force as a method of manufacturing a semiconductor device characterized by the same. Here, the separation of the substrate from the support layer is suitably carried out by using a rod and winding the support layer. As the substrate, a glass substrate or a tantalum substrate having a surface treated with a decane coupling agent can be suitably used. Further, a substrate having a layer composed of aluminum on the surface can be suitably used. In the latter case, the substrate is preferably a substrate having a layer composed of a enamel resin or a fluororesin and a layer composed of aluminum. In the method for fabricating the semiconductor device of the present invention, the support layer is preferably formed to have a thickness of 20 μm or less, more preferably ΙΟμηη or less. The above support layer is preferably composed of polyamine, polyamine, oxime resin or vinyl ester resin. Further, the above-mentioned elements are made of a transistor, an organic electroluminescence element, a liquid crystal element, a memory element, a diode, a resistance element, a photoelectric conversion element, a pressure sensor, and are provided with indium tin oxide and/or Among the group of the conductive film formed of zinc oxide, one or more selected elements are preferable. [Effect of the Invention] -9 - 200816461 According to the present invention, since a support layer having a thickness of ΙΟμηι or less is used as a support (support substrate), and an element is formed thereon, the obtained semiconductor device is previously The comparison is very thin. Further, the semiconductor device of the present invention has a very high flexibility due to its thinness, so it can of course be bent, and for example, it is bent with a very small radius of curvature having a radius of curvature of 0.1 mm or less. In the case of twisting, it will not plastically deform, but can return to the original shape. Further, the deformation of the semiconductor device or the like does not change the characteristics of the semiconductor device. Such a semiconductor device having a very high flexibility can be suitably used for a display device. In particular, the semiconductor device of the present invention is suitable for use in, for example, a display portion as a bent portion because it has no characteristic change or plastic deformation even when it is bent at a very small radius of curvature. Display device. Further, according to the method for producing a semiconductor device of the present invention, the support layer having a very small thickness as the support (support substrate) can be easily formed by a spin coating method, and the work substrate can be easily peeled off. Therefore, according to the method of manufacturing a semiconductor device of the present invention, an ultra-thin semiconductor device can be manufactured with a simple and low engineering number. [Embodiment] <Semiconductor device> The semiconductor device of the present invention includes a support layer made of a polymer having a thickness of 20 μηΐ or less, preferably ΙΟμηι or less, and a shape of -10-200816461 formed on the support layer. The component is characterized as it. By using a support layer which is very thin compared with the prior art as a support (support substrate), it is possible to realize a semiconductor device which is extremely thin overall. According to the present invention, the thickness of the entire semiconductor device can be, for example, 30 μη or less. Further, according to the present invention, it is possible to realize a semiconductor device having a total thickness of 20 μm or less or 10 μm or less. The reduction in the thickness of such a semiconductor device brings flexibility to the semiconductor device. In the semiconductor device of the present invention, for example, even when a very small radius of curvature of a radius of curvature of 0.1 mm or less is bent, it is not plastically deformed, and the original shape can be restored. Here, the term "non-plastic deformation" means that when the semiconductor device is deformed by an external force, the shape at the time of the deformation is not maintained, and the original shape is restored. Here, the relationship between the deformation of the semiconductor device by an external force and the thickness of the semiconductor device will be described. When a force for bending the semiconductor device is applied to the semiconductor device, for example, the semiconductor device is deformed (bent) at a certain radius of curvature p. The larger the external force is, the smaller the radius of curvature p is, and the semiconductor device is deformed. However, if the deformation (bending) reaches a certain radius of curvature or less, the semiconductor device is plastically deformed and destroyed. Therefore, in order to apply a higher degree of flexibility to the semiconductor device, that is, to impart a higher tolerance to deformation such as bending, it is necessary to further reduce the maximum radius of curvature Pi at which plastic deformation occurs. Here, the relationship between the curvature radius p and the occurrence of the skew ε on the surface of the semiconductor device due to the external force is represented by the following formula (1), if the thickness of the entire semiconductor device is h. Further, "skew" is a semiconductor device in which the surface length is L, and the amount of change in the surface length when it is bent by an external force, that is, in the case where the elongation (or shortening) is ΔL, expressed by Δ L / L . P = h / 2 e (1) Therefore, if the maximum skew without plastic deformation (referred to as: elastic limit skew) is ε 1, the above ρι is expressed by the following formula. Further, ε 1 is an inherent defect determined by the material constituting the semiconductor device. ι ι = h / 2 a i (2) From the above formula (2), it is understood that in order to further reduce the maximum radius of curvature p1 of the plastic deformation of the semiconductor device, it is necessary to reduce the thickness h of the entire semiconductor device. Further, it was confirmed that an external force was applied to the semiconductor device, and if the radius of curvature of the deformed (bending) was less than or equal to the radius of curvature of the semiconductor device, the characteristics of the semiconductor device were changed. When the maximum skew of such a characteristic change is ε 2 , it is necessary to reduce the thickness h 2 of the entire semiconductor device in the same manner as in the above formula (2) in order to reduce the maximum curvature radius p 2 due to the change in characteristics. Here, in general, because ε2 <ει, so it becomes ργρ]. In the semiconductor device of the present invention, the support layer having a thickness of 20 μm or less, preferably 10 μm or less, which is composed of a polymer, is used as a support (support substrate). Therefore, if the total thickness is 30 μm or less, it is very thin. In this way, since the thickness h of the whole is small, the semiconductor device of the present invention has a maximum curvature radius pi which is plastically deformed and a maximum curvature radius P 2 which causes a change in characteristics, so that even if it is bent or bent, it is used as a semiconductor. The change in characteristics or plastic deformation of the device is also not produced in -12-200816461. Next, the semiconductor device of the present invention will be described in detail with reference to Fig. 1 . Fig. 1 is a cross-sectional view showing a transistor of a preferred example of the semiconductor device of the present invention. In the semiconductor device of Fig. 1, the support layer 101 is used as a support (support substrate), and the gate electrode 102, the gate insulating film 1〇3, and the source electrode 104 are formed on the support layer i 〇1. A transistor element composed of a drain electrode 105 and an active layer 106. Further, the transistor element is covered with a protective layer 1 〇 7. As described above, the semiconductor device of the present invention is characterized in that a very thin support layer 10 1 made of a polymer is used as a support (support substrate). The thickness of the above-mentioned support layer 101 is 20 μm or less as described above. Since the thickness of the support layer 101 is smaller, the semiconductor device which is thinner as a whole can be realized. Therefore, the thickness of the support layer 101 is preferably ΙΟμπι or less. Specifically, it is Ιμιη~~ΙΟμηι. In this way, the thickness of the support layer 101 is 20 μm or less, and preferably ΙΟμπι or less, and it is found that the flexibility is very high compared with the previous one, that is, for example, even a very small radius of curvature of about 0 · 1 mm or less. A semiconductor device in which the radius of curvature is bent to cause it to be twisted, and it is not plastically deformed, and the original shape can be restored. Further, the support layer 101 is composed of a polymer. Specific examples of the polymer include a polymer such as polyamine, polyamine, an anthracene resin, or a vinyl ester resin. By using such a polymer, for example, by a spin coating method or the like, it is possible to easily form a very thin layer and contribute to flexibility of a semiconductor device. Among these, polyamines are more desirable because of their excellent heat resistance. -13- 200816461 The semiconductor device of Fig. 1 is attached to the support layer 101, and is formed of a gate electrode 102, a gate insulating film 103, a source electrode 1〇4, a drain electrode 105, and an active layer 106. The crystal element is constructed. As such materials, generally known ones can be used. For example, as the gate electrode 012, a conductive polymer such as chromium/gold or PEDOT-PSS, or a conductive ink such as gold, silver or copper may be used. In addition, as a material of the gas-repellent insulating film 1 〇 3, for example, other than oxidized sand (SiO 2 ), a polymer such as polyacrylamide or a sand resin may be mentioned. For the polyamine, for example, PIX-8144 manufactured by Hitachi Chemical Co., Ltd., PIX-6400, SE-812 manufactured by Nissan Chemical Industries Co., Ltd., or the like can be used. The thickness of the gate insulating film 103 is not particularly limited and can be, for example, 2 μm or less. The gate insulating film is composed of yttrium oxide (SiO 2 ), and the thickness thereof is preferably, for example, 〇 · 3 μ m or less. The material of the source electrode 1 〇 4 and the drain electrode 1 〇 5 is, for example, a conductive local molecule such as a complex/gold, P ED Ο TP SS, or a conductive ink such as gold, silver or copper. . As the material of the active layer 106, in addition to the inorganic semiconductor material generally used, for example, an organic semiconductor material such as pentacene, polythiophene, or polyacetylene may be used. Among these, an organic semiconductor material is preferably used from the viewpoint that a thin film can be easily formed by a spin coating method, a vapor deposition method, or the like, and the flexibility of the semiconductor device can be further improved. Further, in the semiconductor device of Fig. 1, the above-mentioned transistor element is covered with a protective layer 1 〇 7. The thickness of the protective layer 1 〇 7 is not particularly limited. However, in order to reduce the thickness of the entire semiconductor device as much as possible, it is preferable to be in the range of -14 to 200816461 2 0 μη. The material of the protective layer 107 may be a conventionally known one, and examples thereof include a vinyl ester resin, a urethane acrylate resin, an anthracene resin, and an ultraviolet curable resin. More specifically, it can be used: polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate, polyamidamine, polyamine , polymethyl hydrazine, poly vinegar, polyphenyl phthalate, Poly Sul fone, Polyethei: Sulphone, polyphenylene sulfide, aromatic polyester, polyamidoximine (Polyaniide-imide), polyether phthalamide (polyether ketone), polyether ketone (polyether ketone), liquid crystal polymer, fluororesin and other engineering plastics and super engineering plastics, phenolic resin, urea resin, melamine resin , thermosetting resin such as unsaturated polyester resin or epoxy resin, polyethylene, polypropylene, polystyrene, polyvinyl chloride, methacrylic resin, acrylonitrile/butadiene/styrene resin (ABS resin) A general-purpose resin such as acrylonitrile/styrene resin (AS resin). Further, in the semiconductor device of the present invention, it is not necessary to have a protective layer as a necessity. Here, in the case where the semiconductor device is bent and deformed, the semiconductor device is skewed, but the skew is minimized in the vicinity of the intermediate position in the thickness direction. Therefore, it is preferable that the above-mentioned elements are disposed in the vicinity of the intermediate position in the thickness direction. From such a viewpoint, in the case where the protective layer is formed, the thickness of the protective layer is desirable as the thickness in such a manner that the element is disposed in the vicinity of the intermediate position in the thickness direction of the semiconductor device. In the semiconductor device of the present invention, the transistor shown in FIG. 1 is described as an example. However, the device included in the semiconductor device -15-200816461 of the present invention is not limited thereto and is formed on the support layer. The element is an organic electroluminescence element (organic EL element), a liquid crystal element, a memory element, a diode, a resistance element, a photoelectric conversion element, a pressure sensor, and the like, and is made of indium tin oxide. Further, it is also preferable that the element of the conductive film formed of zinc oxide is excellent, and the combination of these two or more types is also preferable. These elements can be formed on the support layer using previously known materials, previously known methods. <Manufacturing Method of Semiconductor Device> (First Embodiment) Next, an example of a method for manufacturing a semiconductor device according to the present invention will be described. A method of manufacturing a semiconductor device according to the present invention includes: (a) a process of forming a release layer made of aluminum; and a process of forming a support layer made of a polymer on the release layer (B) And on the support layer, the process of forming the component (C); and the process of dissolving the release layer by using an alkaline solution, and separating the substrate from the support layer (D). According to the method for fabricating a semiconductor device of the present invention, a thin semiconductor device in which an element is formed on a support layer having a thickness of 20 μm or less, preferably ΙΟμηι or less, can be produced with an easy and small number of works. Hereinafter, a method of manufacturing the semiconductor device of the present embodiment will be described with reference to Fig. 2 . Fig. 2 is a view showing a preferred example of a method of manufacturing a semiconductor device of the present invention. In Fig. 2, the conductor device of the semi-16 - 200816461 in each project is shown in a schematic cross-sectional view. Further, Fig. 2 shows an example of fabricating a semiconductor device having a transistor element. However, in the case of an element having the above-described different elements, the same method can basically be applied. In the method of manufacturing a semiconductor device of the present embodiment, first, the substrate 201 is prepared. As the material of the substrate 201, various materials such as plastic, glass, metal, and ceramic can be used. The thickness of the substrate 210 is not particularly limited, and may be, for example, about several hundred μm to several mm. Then, as shown in Fig. 2(a), a peeling layer 202 is formed on the substrate 201 (engineering (A)). Here, the release layer 02 is a layer made of aluminum, which can be formed by a method such as vapor deposition or sputtering. The thickness of the peeling layer 202 is preferably not more than 10 nm. In the case where it is thicker than 1 Onm, it takes a long time to dissolve the peeling layer 202 using an alkaline solution in the subsequent process. The thickness of the peeling layer 202 is preferably 5 nm or less, more preferably about 1 to 2 nm. In the next process, as shown in Fig. 2(b), a support layer 203 made of a polymer is formed on the peeling layer 202 (engineering (B)). This support layer 203 is the last support (support substrate) of the semiconductor device. The thickness of the support layer 203 is as described above, and is preferably 20 μm or less. The smaller the thickness of the support layer 203 is, the thinner the semiconductor device can be realized as a whole, and therefore the thickness of the support layer 203 is preferably as follows. Specifically, it is about 1 μ»1~1 Μ111. In this way, by the thickness of the support layer 203 as 2 Ο μ m or less, the ideal system is 1 Ο μ m or less, and the flexibility is very high compared with the previous one, that is, even if the radius of curvature is 0. · A very small radius of curvature of 1 mm or less, -17-200816461, which is twisted and twisted, and does not plastically deform, and can return to the original shape of the semiconductor device. Further, the support layer 203 is made of a polymer. Specific examples of the polymer include polymers of polyamine, polyamine, eucalyptus, and vinyl ester resins. By using such a polymer, for example, by using a spin coating method or the like, it is possible to easily form a very thin layer and contribute to flexibility of the semiconductor device. Among these, polyiminoamine is more desirable because of its excellent heat resistance. The support layer 203 is intended to be comprehensive or substantially comprehensive on the substrate 201. Next, as shown in Fig. 2(C), the process of forming a component on the support layer 203 (engineering (C)) is performed. Here, since the transistor element is constructed, the gate insulating film 205 is formed after the gate electrode 204 is formed by a conventionally known method using a previously known material. Next, the active layer 208 is formed by using a previously known material and forming the source electrode 206 and the drain electrode 207 by a conventionally known method. Next, a protective layer 209 is formed on the active layer 208. Further, the engineering for forming the protective layer 209 is not necessary, and may be suitably provided in accordance with the use of the semiconductor device or the like. Here, it is preferable that only one element is formed on the same substrate, and two or more elements are preferably formed. Further, the gate insulating film 205, the active layer 208, and the protective layer 209 are preferably formed only in the region where the element is formed on the substrate 201, or are formed on the substrate 203 as a whole. This point is also discussed the same even in the case where the element is an element other than the transistor element. In the next process, as shown in FIG. 2(d), the peeling layer 202 is dissolved by using an alkaline solution, and the substrate 201 and the support layer 203 are separated, and -18-200816461 is obtained to support the support layer 203. Thin semiconductor device of body (support substrate) (engineering (D)). As a method of dissolving the peeling layer 2〇2 using an alkaline solution, since the operation is relatively simple, a method of immersing the semiconductor device in an alkaline solution is preferably used. The immersion temperature is not particularly limited and is, for example, about 0 to 100 °C. More preferably, it is 20 to 5 (TC. Further, the immersion time is not particularly limited, and it is possible to sufficiently dissolve the peeling layer 220, and the substrate 203 is separated from the support layer 203. Typically, the coefficient is very large to several hours. The separation of the substrate 201 and the support layer 203 is performed by immersing the semiconductor device in an alkaline solution and placing the substrate 201 and the support layer 203 completely separated, or by using the semiconductor device. In the portion where the substrate 20 1 has been partially immersed, the portion of the substrate 20 1 which has been partially peeled off is preferably ejected to the interface between the substrate 201 and the support layer 203, etc. The alkaline solution is dissolved. The aluminum is preferably not particularly limited. Specifically, 'a solution of an alkali metal hydroxide such as sodium hydroxide or a TMAH (Tetramethyl ammonium hydroxide) developing solution for photoetching can be used, and among these, the TMAH system is used. The developing solution is preferably used. The developing solution is mainly an aqueous solution containing tetramethylammonium hydroxide. When such a TMAH-based developing solution is used as an alkaline solution of the present project, the developing solution is used. of The concentration of tetramethylammonium hydroxide is, for example, about 1 to 20% by mass. (Second Embodiment) Next, an example of another preferred embodiment of the method for manufacturing a semiconductor device of the present invention, another -19-200816461, will be described. The manufacturing method includes: forming a support layer formed of a polymer on a substrate having a surface having a contact angle of water of 80° to 110°; (I); and in the support layer Engineering for forming an element thereon; and engineering (ΙΠ) for separating the substrate from the support layer by applying a mechanical force. If such a manufacturing method is used, it will be ideal. A thin semiconductor device in which a device is formed on a support layer having a thickness of 1 μm or less is produced in an easy and small number of works. Further, compared with the first embodiment, the process of peeling off the substrate is easier. The method of manufacturing the semiconductor device of the present embodiment will be described with reference to Fig. 3. Fig. 3 shows the manufacture of the semiconductor device of the present invention. A plan view of another preferred embodiment of the method. In the third embodiment, a semiconductor device of each process is shown in a schematic cross-sectional view. Moreover, FIG. 3 shows an example of fabricating a semiconductor device having a transistor element, but has In the case of the above-described different elements, the same method can be basically applied. In the method of manufacturing a semiconductor device of the present embodiment, first, the substrate 301 is prepared. The substrate 301 has a contact angle with water of 80° to 110°. The surface contact angle of water is preferably 85° to 95°. When the contact angle with water is less than 80°, the adhesion between the surface of the substrate and the support layer becomes too high. Peeling of the substrate becomes difficult. Further, in the case where the contact angle with water exceeds 110 °, since the water repellency is too high, it is difficult to form the support layer with appropriate adhesion. In the case where the substrate and the support layer do not have a moderate adhesiveness, the process of forming a component on the support layer (for example, engineering using an organic solvent or engineering for ultrasonic processing, etc.), -20-200816461 has a substrate and a support layer. I think about the separation outside. By setting the contact angle with respect to water on the surface of the substrate to 80° to 110°, it is possible to prevent peeling of the substrate other than the case where the element is formed, and at the same time, it is possible to perform mechanical peeling of the substrate at a predetermined timing. The size of the substrate is not particularly limited, and a large-area substrate can be used by the method of the present embodiment. Further, in the present invention, the contact angle with respect to water on the surface of the substrate is such that at a temperature of 20 ° C and a relative humidity of 40%, 0.01 ml of water droplets are dropped onto the surface of the substrate, and the image is photographed from the front side by a digital camera. , draw the contact angle on the computer to draw the tangent. The thickness of the substrate 301 is not particularly limited, and may be, for example, about several hundred μm to several mm. Further, the material of the substrate 301 is not particularly limited, but for example, glass, bismuth (S i ), enamel resin, fluororesin, polyethylene terephthalate (PET), polynaphthalene diacetate can be used. Ethyl ester (PEN), polybutylene terephthalate, polyvinyl chloride (PVC), polystyrene (PS), methacrylic resin, acrylonitrile/butadiene/styrene resin (ABS resin), propylene Nitrile/styrene resin (AS resin), polyamidamine, polyamine, polyoxymethylene, polycarbonate, denatured polyphenylene ether, polysulfone, poly phoenix (P 〇1 yether S u 1 ph ο ne), polyphenylene sulfide, aromatic polyester, polyamide-imide, polyether phthalimide, polyether ketone, liquid crystal Engineering plastics such as polymers and super engineering plastics, phenolic resins, urea resins, melamine resins, unsaturated polyester resins, epoxy resins, polyethylene, polypropylene, etc. The fluororesin is exemplified by polytetrafluoroethylene. Here, in the case where the contact angle of the substrate surface is in the above range in accordance with the substrate material to be used, for example, it is preferable to apply the treatment to the surface of the substrate as described below. For example, when the substrate material is glass or germanium (Si), the water-repellent surface is ideal as the contact angle of the substrate surface is in the above range. As the water repellent agent, for example, a previously known decane coupling agent can be used, and as the decane coupling agent, for example, Hexamethyldisilazane (HMD S ), 3-aminopropyltriethyl ethane can be cited. Oxydecane, 3-glycidyl ether propyl trimethoxy decane, bis(3-(triethoxyindenyl)propyl) disulfide, ethylene triethoxy decyl methoxide, methacryloxypropyl Trimethoxydecane, 3-propoxypropyltrimethoxydecane, 3-hydrothiopropyltrimethoxydecane, N-(l,3-dimethylbutylidene)-3-aminopropyltriethyl Oxydecane, η-octyldimethylchlorodecane, diallyldimethyloxane, tetraethoxydecane, diphenyldimethoxydecane, trifluoropropyltrimethoxydecane, methyltrichloro Decane and so on. Among them, hexamethyldioxane (HMD S ) is preferable because it can apply ρ to the above-mentioned ideal contact angle. The temperature of the water repellent treatment using the decane coupling agent may be, for example, about 100 to 200 ° C, preferably about 110 to 160 ° C, more preferably about 120 to 150 ° C, depending on the type of the decane coupling agent to be used. . When the temperature is less than 100 °C, sufficient water repellent treatment cannot be performed, and the adhesion between the substrate and the support layer is too high, and the peeling of the substrate is difficult. Further, when the water repellent treatment temperature exceeds 200 °C, the water repellency of the substrate becomes too high, so that the formation of the support layer becomes difficult or the decane coupling agent itself is decomposed. The water-repellent treatment time can be, for example, several seconds to several hours. However, in order to apply a suitable contact angle, it is preferably about 1 minute to several tenths, and preferably about 1 to 10 minutes is -22-200816461. More preferably, it is about 3 to 5 minutes. The specific method of the water-repellent treatment using the decane coupling agent is not particularly limited, and for example, a method in which one surface of the substrate is brought into contact with the decane coupling agent, and the substrate is heated using a hot plate or the like . Further, in the case where the substrate material is a ruthenium resin or a fluororesin, the contact angle of the surface of the substrate is in the above range, and the hydrophilic treatment surface is preferable. As a specific method of the hydrophilic treatment, for example, a method of forming a layer made of aluminum on a substrate can be mentioned. Thereby, a substrate having a surface having a contact angle with water of about 80 to 110 can be obtained. The aluminum layer can be formed by a method such as evaporation or sputtering. The thickness of the aluminum layer is not particularly limited, and may be, for example, about 1 to 10 nm, and preferably about 1 to 5 nm. When the substrate material is glass or the like, in place of the above water repellent agent, in order to lower the hydrophilicity of the surface, it is preferable to form the above aluminum layer. As a result, the hydrophilicity of the surface of the substrate is lowered, and the separation of the support layer formed on the aluminum layer from the substrate can be performed relatively easily. Further, in the case where an aluminum layer is directly formed on the surface of the substrate such as a glass substrate, the substrate can be peeled off by the method according to the first embodiment described above. Further, a layer made of a ruthenium resin or a fluororesin is formed on the surface of a substrate such as a glass substrate, and a layer made of aluminum is preferably formed thereon. Therefore, the contact angle of the surface can be made larger as compared with the case where the aluminum layer is directly formed on the surface of the substrate such as a glass substrate, and a more desirable surface state can be formed as a mechanically peelable surface. A layer composed of a ruthenium resin or a fluororesin can be formed by a spin coating method using a solution in which the resin is dissolved. The thickness of the layer composed of the enamel resin or the fluororesin is preferably as thin as possible from -23 to 200816461, and may be, for example, 800 nm or less, or preferably less than 60 ntn. In the thickness of more than 800 nm, a baking process is performed on a support layer formed on a large-area substrate, and a gate insulating film made of a polymer such as polyamidamine or oxime resin is formed. The film is cracked, and thus there is a tendency that good element characteristics are not obtained. In the surface treatment method of the above-mentioned substrate, a multilayer film can be formed on a large-area substrate without causing cracks or the like. Therefore, water is used for the surface of the substrate such as glass or bismuth (Si). The treatment with a treatment agent is preferred. In the present embodiment, a support layer 303 made of a polymer is formed on the substrate 301 having the above specific contact angle (Engineering (I), see Fig. 3(a)). The thickness, material, and the like of the support layer are the same as those in the first embodiment described above, and are omitted here. The support layer 3 03 is desirably formed in a comprehensive or substantially comprehensive manner on the substrate 301. Next, as shown in Fig. 3(b), the project (engineering (Π)) for forming an element on the above-mentioned support layer 303 is moved. In the present embodiment, since the transistor element is constructed, the gate electrode 304 is formed by a previously known method using a previously known material, and then the gate insulating film 305 is formed. Next, the active layer 308 is formed by forming the source electrode 306 and the drain electrode 307 by a previously known method using a previously known material. Next, a protective layer 309 is formed on the active layer 308. Further, the "engineering that is not necessary for the construction of the protective layer 309" can be appropriately set in accordance with the use of the semiconductor device or the like. Here, it is also possible to form only one element on the same substrate, and it is also preferable to form two or more elements. In addition, the above-mentioned gate electrode -24-200816461 film 305, active layer 308 and protective layer 309 may be formed only on the substrate formed region on the substrate 301, or may be formed on the substrate 301 as a whole. . This point is also discussed in the same manner even in the case where the element is an element other than the transistor element. In the next process, as shown in Fig. 3(c), the substrate 303 and the support layer 303 are separated by applying a mechanical force to obtain a thin type in which the support layer 303 is used as a support (support substrate). Semiconductor device (engineering (dish)). The means for applying the mechanical force is not particularly limited as long as the substrate can be peeled off, but it is not easy to be treated, but it is also difficult to produce a point corresponding to a large-area substrate or a destruction of the element portion. Ideally employed: a method of winding a support layer 303 using a rod. Hereinafter, details of the peeling method using the substrate of the rod will be described. Fig. 4 is a schematic view showing an example of a peeling method of a substrate using a rod. Further, the comb-tooth region on the support layer 303 of Fig. 4 indicates a region where the source electrode and the drain electrode are formed. In this method, as shown in FIG. 4, the support layer 3〇3 including the element formed on the substrate 310 is wound up and supported by a rod 401 having a circular or slightly circular cross-sectional shape. Layer 3 0 3 and substrate 3 0 1 . In the case where the cross section of the rod is circular, the radius of the cross section is, for example, about 0.1 to 1 mm. The semiconductor device of the present invention has high flexibility, and can be restored to its original shape even if it is lumped and bent with a small radius of curvature, and it is difficult to change the characteristics of the device. Therefore, the cross-sectional radius of the rod can also be, for example, about 0.1 to 2 mm. The material of the rod 401 is not particularly limited, and for example, metal such as stainless steel, plastic, or the like can be used. -25- 200816461 In order to facilitate the initial separation of the support layer 303 formed to the end of the substrate 301, for example, as shown in Fig. 4, before the winding using the rod 401, prior support At the end of the layer 3 03, the auxiliary film 402 is adhered using an adhesive tape or an adhesive or the like, and the winding is started from the auxiliary film 4〇2, and then the winding of the support layer 03 is preferably performed. As the auxiliary sheet, various resin films can be used. Further, at the time of winding up the support layer 303, on the support layer 303 on which the element is formed, a resin film or the like may be applied to the support layer 303 on which the element is formed, and then the resin may be applied to the support layer 303. The film is taken up together. Further, when the support layer 303 is wound up, it is also possible to use a separation promoting means such as a jet of water or hot water to be sprayed on the interface between the substrate 301 and the support layer 303. The winding direction of the support layer 303 is not particularly limited. For example, as shown in FIG. 4, for the passage formed by the source electrode and the drain electrode, the rod 40 1 is placed in parallel so that the rod 40 1 is wound. It is also preferable that the rod 401 is disposed in such a manner that the rod 401 is vertical for the passage, and the winding is also preferable. Alternatively, it is preferable to perform the winding in the oblique direction from any one of the corners of the substrate 310. In order to make the change in the characteristics of the components before and after the winding, the winding is preferably performed vertically or slightly perpendicular to the passage. Further, the phrase "parallel to the channel" and "vertical to the channel" means that the channel length direction of the channel formed between the source electrode and the drain electrode is parallel and perpendicular. The support layer 3〇3 having the element taken up by the rod 401 can be easily removed from the rod 401 because it is highly flexible and easily returns to its original shape (sheet shape). -26- 200816461 The method for manufacturing a semiconductor device according to the present invention using the above-described rods is compatible with a large-area substrate, and the substrate is easily peeled off, and a complicated apparatus is not required for the peeling process. Such a method of fabricating a semiconductor device is highly advantageous for automating a manufacturing process. That is, the automated manufacturing process includes, for example, pulling out a substrate that is taken up to a roll shape, and subjecting the surface to a water repellent treatment or a hydrophilic treatment as necessary to form a support layer on the treated surface. And the component forming process of the component, and the process of winding the support layer forming the component onto the rod. At this time, the substrate which has been peeled off can be re-wound to the drum shape and used repeatedly. <Display device> The semiconductor device of the present invention can be suitably used as a component of the display portion of various display devices. Here, the display device refers to all electronic devices including a display unit that displays an image or a character. Examples of such an electronic device include a portable information terminal such as a portable telephone or a portable computer, a personal computer, a video camera, a digital camera, a car navigation system, a projector, a car audio, and a home appliance having a display unit. Products, etc., but are not limited thereto. Since the semiconductor device of the present invention is thin, flexible, and flexible, such as bending or twisting, a display device having a bent portion can be suitably used in the bent portion. A display device that is bent or bent and has a display portion at least at the bent portion. Here, the "bending portion" is a portion of the display device that is bent or bent when folded or bent in the display device. Examples of such a display device include, but are not limited to, electronic papers and electronic books. Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto. <Production of Semiconductor Device><Example1> A semiconductor device having a transistor element was produced by the following method. This will be described with reference to Fig. 2 . The glass substrate 201 having a high flatness of 1 mm was vapor-deposited with 2 nm of aluminum to form a peeling layer 202. Then, a solution having a thickness of 5 μm was formed on the peeling layer 202 using a solution-like polyamidamine (PIX_8144, manufactured by Hitachi Chemical Co., Ltd.), and then dried at 1 ° C for 1 hour. Next, a support layer 203 was formed by heat treatment at 250 ° C for 1 hour. Next, a lift-off resist pattern for forming a gate electrode is formed, and chromium is formed by a vapor deposition method, and then gold is deposited by 50 nm, and then peeled off by acetone to form a gate. Electrode 204. Next, a solution-like polyimine (PIX-8 144 manufactured by Hitachi Chemical Co., Ltd.) was used, and a film was formed by a spin coating method, followed by drying at 100 ° C for 1 hour, followed by at 250 ° C. The gate insulating film 205 having a thickness of 2 μm was formed by heat treatment for 1 hour. Next, after forming the source electrode and the drain electrode pattern by lithography, the chromium is vapor-deposited by 1 mm, and then the gold is vapor-deposited by 50 nm, and the source electrode 206 and the drain electrode are formed by a lift-off method. 207. Next, as the active layer 208, the organic electric device portion was completed by vapor-depositing pentacene which is an organic semiconductor -28-200816461 bulk material at a thickness of 50 nm. Moreover, the protective layer 209 is not provided in this embodiment. Next, the semiconductor device having the obtained substrate 201 was immersed in a photolithography developing solution (MFCD-26, manufactured by Rohm and Company) at room temperature for about 1 hour, and the substrate 201 was peeled off to obtain an organic body having a total degree of about 7 μm. Semiconductor device. After the semiconductor device is bent at a radius of curvature of 0 · 1 mm, plastic deformation is not generated and the original planar shape is restored. <Example 2> A layer 2 of a thickness of 5 μm was formed on the active layer 208 by a spin coating method using a vinyl ester resin before the peeling of the substrate 201, and the same procedure as in Example 1 was carried out. On the other hand, an organic semiconductor device of about 12 μm was produced. After the semiconductor device was bent at a diameter of 0.1 mm, plastic deformation was not caused and the original planar shape was restored. <Example 3> A semi-conductor having a transistor element was produced by the following method. This will be described with reference to Fig. 3. First, a glass substrate 301 having a length of 50 x 50 mm and a length of 1.1 mm was placed on a hot plate, and a cotton wool into which hexamethylene chloride (HMDS) was infiltrated was placed on a substrate 301, and a petri dish was placed thereon. Next, HMDS treatment is performed by heating the plate with a heating of 1 5 (TC 5 ). The surface of the substrate crystal which has been treated by HMDS is thickened by the thickness of Haas by the thickness of the body to protect the thickness and is in the minute surface. 29-200816461 The contact angle with water was measured by the above method, and the result was 92°. Then, on the surface of the HMDS-treated substrate, a solution-like polyamidamine (PIX manufactured by Hitachi Chemical Co., Ltd.) was used. -8 144) and a film having a thickness of about 3 μm was formed by spin coating (100 rpm 3 seconds, 3000 rpm 60 seconds), and then carried out at 1 ° C for 1 hour. After drying, the support layer 3 03 is formed by heat treatment at 250 ° C for 1 hour (see Fig. 3(a)). Next, a lift-off resist pattern for forming a gate electrode is formed. After forming chromium 1.2 nm by vapor deposition, and then vapor-plating gold 3 Onm, it is peeled off by acetone to form a gate electrode 34. Next, a solution-like polyimide (Nissan Chemical Industry) is used. Company-made SE-812) by spin coating (1 000 rpm 3 seconds, 5000 rpm 60 After the film formation, drying was performed at 1 ° C for 1 hour, followed by heat treatment at 25 ° C for 1 hour to form a gate insulating film 3 0 5 having a thickness of about 600 nm. Next, by lithography After the source electrode and the drain electrode pattern were formed by etching, chromium was vapor-deposited at 1.2 nm, and then gold was vapor-deposited at 30 nm, and the source electrode 306 and the drain electrode 3 07 were formed by a lift-off method. The length (L) is as follows: 20 μm, and the channel width (W) is 78 mm. Next, as an active layer 308, an organic transistor is obtained by vapor-depositing pentacene which is an organic semiconductor material at a thickness of 50 nm. Further, in the present embodiment, the protective layer 309 is not provided. Fig. 5 is a perspective view schematically showing the organic transistor element formed on the substrate 310. Further, in Fig. 5, the active layer 3 0 The 8th line is omitted. As shown in Fig. 5, the source electrode 3 0 6 and the source electrode 3 0 7 are each having a comb shape, and the length of each of the overlapping portions of the comb 30-200816461 is set to 2mm. In addition, unlike the sketch of Figure 5, the number of comb teeth is the source electrode 306 and 汲The number of the pole electrodes 3 07 is 20, respectively. Therefore, the channel width (W) is 2 mm X 20 (branch) - 2 mm = 78 mm (2 mm of two sillies is -2 mm because it does not overlap). It will be formed as above. A total of six organic transistor elements on the substrate 301 are produced. Next, three of the six elements are each made of a stainless steel cylindrical rod having a cross-sectional radius of 2 mm, 1 mm, and 0.5 mm, and a support layer is used. The winding of 303 separates the support layer 303 from the substrate 301. Regarding these three components, the winding direction is as shown in Fig. 6, and the parallel passage is made as far as possible. On the one hand, regarding the remaining three components, a stainless steel cylindrical rod having a section radius of 2 mm, 1 mm, and 0.5 mm is also used, and the support layer 03 is wound in a manner that the passage direction is perpendicular to the winding direction, and the support layer 3 is separated. 0 3 and substrate 3 0 1. Regarding the above six elements, the current-voltage characteristics before and after winding are shown in Figs. 7 and 8. Fig. 7 is a line diagram showing the current-voltage characteristics before and after the winding in the case where the winding direction is parallel to the passage (i.e., before and after the substrate is peeled off), and Fig. 7(a) shows the peeling of the substrate. The current-voltage characteristic line diagram and the seventh (b) to (d) diagrams respectively show the current at the end of winding at the time of winding using a cylindrical rod having a section radius of 2 mm, 1 mm, and 0.5 mm. - A line graph of voltage characteristics. Similarly, Fig. 8 is a line diagram showing current-voltage characteristics before and after winding in the case where the winding direction is perpendicular to the channel (i.e., before and after substrate peeling), and Fig. 8(a) shows peeling. A line graph of current-voltage characteristics before the substrate, and Figs. 8(b) to (d) are each -31 - 200816461. When the cylindrical rod having a section radius of 2 mm, 1 mm, or 0.5 mm is used for winding. A line graph of current-voltage characteristics at the end of coiling. The graphs in Fig. 7 and Fig. 8 show the gate voltage (vd) as +2 〇 to -60 V (10 V interval) and the drain-source voltage as +20 to -60 V (2 V interval). data. As can be seen from Fig. 7 and Fig. 8, it is understood that the semiconductor device of the present invention can be sufficiently put into practical use even after a certain amount of drain current is observed before and after the substrate is peeled off. In addition, in the case where the channel is taken in the vertical direction, it is understood that the current and voltage characteristics are roughly different depending on the radius of the rod. This means that by winding the channel in the vertical direction, even if the curvature of the support layer at the time of winding is very small, the substrate can be peeled off without adversely affecting the components. Further, in the above-described embodiment, in order to evaluate the element characteristics at the time of peeling of the substrate, the current-voltage characteristics at the end of the winding of the support layer were measured, but the result of Fig. 8 was because the rod diameter was very large and very small. In other cases, it is also shown that the characteristics of the element do not change, so it can be easily estimated that the current-voltage characteristic at the end of the support layer winding is substantially the same as the removal of the support layer from the rod. The current-voltage characteristics at the time of the expression indicate the same enthalpy. Moreover, the shape of the plane is restored after the support layer having the components that have been taken up is removed from the rod. <Example 4> A semiconductor device having a transistor element was produced by the following method. This will be described with reference to Fig. 3. First, a 55 wt% enamel resin solution (SILPOT 184 W/C manufactured by Dow Corning Toray Co., Ltd.) was used on a glass substrate 301 having a length of 50 x 50 mm and a thickness of -32 to 200816461 l.lmm by spin coating (1). After forming a film having a thickness of about 6,000 nm by using 0 00 rpm for 3 seconds and 50,000 rpm for 60 seconds, the film was baked at 150 ° C for 1 Torr using a hot plate. Next, aluminum was deposited on the tantalum resin layer to a thickness of 1 nm. Then, on the surface of the substrate on which the resin layer and the ingot layer were formed, a solution-like polyamidamine (PIX-8 144 manufactured by Hitachi Chemical Co., Ltd.) was used and formed by spin coating (3 000 rpm). After a film having a thickness of about 2.3 μm, the film was dried at 1 ° C for 1 hour, and then heated at 250 ° C for 1 hour to form a support layer 3 0 3 (see Fig. 3(a)). Next, a lift-off resist pattern for forming a gate electrode was formed, and chromium was formed into a film of 1.2 nm by vapor deposition, followed by vapor deposition of gold by 30 nm, and then peeled off by acetone to form a gate. Electrode electrode 3 04. Next, using a solution-like polyiminamide (PIX-8144 manufactured by Hitachi Chemical Co., Ltd.) and a film having a thickness of 2.3 μm by a spin coating method (500 rpm), an inert oven was used. (Inert Oven) was dried at 200 ° C for 30 minutes, and then a gate insulating film 3 05 having a thickness of about 2.3 μm was formed by heat treatment at 25 ° C for 1 hour. Next, the source electrode and the drain electrode pattern were formed by lithography, and then chromium was vapor-deposited at 1.2 nm, followed by vapor deposition of gold at 30 nm, and a source electrode 3 06 and a crucible were formed by a lift-off method. Electrode electrode 3 07. The channel length (L) is as 20 μm and the channel width (W) is 78 mm. Next, as an active layer 308, an organic semiconductor device portion was completed by vapor-depositing pentacene which is an organic semiconductor material at a thickness of 50 nm. Moreover, the protective layer 309 is not provided in this embodiment. -33- 200816461 Next, the support layer 303 is wound up using a stainless steel cylindrical rod having a section radius of 5 mm, and the support layer 303 and the substrate 301 are separated. The take-up system can be easily carried out. In addition, after the support layer having the components that have been taken up is removed from the rod, the result is restored to the planar shape. It should be understood that the embodiments and examples of the present invention are shown by way of example only and not limitation. The scope of the present invention is defined by the scope of the claims, and is intended to be BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a cross-sectional view showing a transistor of a preferred example of the semiconductor device of the present invention. [Fig. 2] Fig. 2 is a schematic view showing an example of a method of manufacturing a semiconductor device of the present invention. [Fig. 3] Fig. 3 is a plan view showing another preferred example of the method of manufacturing a semiconductor device of the present invention. [Picture 4] An example of a method of peeling off a substrate on which a rod is not used [Fig. 5] A perspective view schematically showing an organic transistor element formed on a substrate. [Fig. 6] is a perspective view showing an example of the winding direction of the winding of the support layer using the rod. [Fig. 7] is a graph showing the current-voltage characteristic of the current-voltage characteristic of the case where the winding direction is parallel to the channel and before the winding is completed (that is, before and after the substrate is peeled off). [Fig. 8] is a line diagram showing the current-voltage characteristics before the winding and the end of the winding (i.e., before and after the substrate is peeled off) in the case where the winding direction is perpendicular to the passage. [Main component symbol description] 1 0 1 : Support layer 1 0 2 : Gate electrode 103 : Gate insulating film 1 〇 4 : Source electrode 1 〇 5 : Dip electrode 1 〇 6 : Active layer 107 : Protective layer 2 0 1 : substrate 2 0 2 : peeling layer 2 0 3 : support layer 2 0 4 : gate electrode 205 : gate insulating film 2 0 6 : source electrode 2 0 7 : drain electrode 2 0 8 : active layer 209 : Protective layer 301 : Substrate 3 〇 3 : Support layer - 35 - 200816461 3 0 4 : Rattle electrode 3 05 : Gate insulating film 3 0 6 : Source electrode 3 0 7 : Dipolar electrode 3 0 8 : Active layer 3 09 : Protective layer 401 : Rod 402 : Auxiliary film - 36-