KR20170080756A - Auxiliary electrode structure and organic light emitting display device having the same - Google Patents

Abstract

The auxiliary electrode structure and the organic electroluminescent display device having the auxiliary electrode structure according to the present invention can secure the electric conductivity of the cathode electrode stably because the cathode electrode is electrically connected to the auxiliary electrode layer disposed on the bottom surface of the substrate through the through auxiliary electrode.
Therefore, in the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, the external voltage Vss is applied to the second electrode, the through auxiliary electrode, and the auxiliary electrode layer.
In the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, an auxiliary electrode layer electrically connected to the cathode electrode through the through auxiliary electrode penetrating the outside of the pixel region is disposed on the bottom surface of the substrate. As a result, there is no possibility of overlapping with the gate wiring, the data wiring, and the like, so that the aperture ratio can be maximized and the electric conductivity of the cathode electrode can be ensured, thereby ensuring stable luminance uniformity over the entire panel area.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an auxiliary electrode structure and an organic electroluminescent display device having the auxiliary electrode structure,

The present invention relates to an auxiliary electrode structure capable of improving luminance uniformity by reducing a surface resistance of a cathode electrode and an organic light emitting display having the auxiliary electrode structure.

The organic electroluminescent display device is a self-luminous element, and since it does not require a backlight used in a liquid crystal display device which is a non-luminous element, it can be lightweight and thin. The organic electroluminescence display device is superior to the liquid crystal display device in viewing angle and contrast ratio, is advantageous from the viewpoint of power consumption, can be driven by low-voltage direct current, has a high response speed, The operating temperature range also has a wide range of advantages.

Such organic light emitting display devices are classified into a passive matrix type and an active matrix type. In this case, the passive matrix type device forms a matrix type device while crossing signal lines, whereas the active matrix type device forms a thin film transistor which is a switching device for turning on / off a pixel, a driving thin film transistor for flowing current, A capacitor for holding the voltage for one frame in the thin film transistor is arranged for each pixel.

In recent years, active matrix type organic light emitting display devices capable of realizing a high resolution and a large screen have been actively studied because passive matrix type organic light emitting display devices have many limitations on resolution, power consumption, and life span .

In addition, the organic light emitting display device is divided into a top emission type and a bottom emission type according to the transmission direction of emitted light. Among these, the lower light emitting method has a problem of being difficult to apply to high-resolution products because of its high stability and high degree of freedom in process,

Accordingly, in recent years, studies on an organic light emitting display device of a top emission type having a high aperture ratio and a high resolution have been actively conducted.

1 is a cross-sectional view illustrating a general top emission organic light emitting display device.

As shown in FIG. 1, a general top emission type organic light emitting display device 1 includes a first substrate 10 and a second substrate 20 facing the first substrate 10. The first and second substrates 10 and 20 may be sealed and attached by a seal pattern 30 disposed along the edge.

A thin film transistor Tr arranged on each pixel region (not shown), a first electrode 60 connected to the thin film transistor Tr and a second electrode 60 arranged on the first electrode 60 are arranged on the first substrate 10 And a second electrode 80 disposed on the organic light emitting layer 70 are formed.

The organic light emitting layer 70 displays red, green, and blue colors. As a general method, a separate organic material emitting red, green, and blue light is patterned for each pixel region.

The first electrode 60 is an anode and the second electrode 80 is an anode and the organic light emitting layer 70 and the second electrode 80 are organic light emitting diodes. Can be composed of a cathode.

The organic light emitting layer 70 disposed between the first and second electrodes 60 and 80 has a structure in which the first and second electrodes 60 and 80, 60, and 80, respectively. In this case, since the light emitted from the organic light emitting layer 70 must pass through the second electrode 80 in the case of the upper emission type, the second electrode 80 has a thin thickness It is made of metal of translucent material.

If the second electrode 80 is formed of a transparent or semitransparent metal, if the electrical conductivity is difficult to secure, the resistance increases. As a result, the voltage drop due to the difference in the distance between the edge portion and the center portion ).

As a result, a difference in luminance occurs at the edge portion and the central portion, which makes it difficult to secure uniformity of luminance in each position in the organic light emitting display device 1. [

In order to solve this problem, in recent years, the second electrode 80 is electrically connected to the same layer as the source and drain electrodes of the thin film transistor Dr in the first substrate 10 to secure the electrical conductivity of the second electrode 80 However, in this case, since the Vss auxiliary wiring must be separately designed in the first substrate 10, there is a problem that the aperture ratio is lowered.

A related prior art is Korean Patent Laid-Open Publication No. 10-2014-0141459 (published on December 10, 2014), which discloses an organic light emitting display device and a method of manufacturing the same.

An auxiliary electrode layer is designed on the back surface of a substrate, and the auxiliary electrode layer and the cathode electrode are electrically connected through a plurality of insulating films and a through auxiliary electrode disposed in a through hole passing through the substrate to reduce the surface resistance of the cathode electrode, And an organic electroluminescent display device having the auxiliary electrode structure.

For this, an auxiliary electrode structure and an organic light emitting display device having the same according to the present invention include a cathode electrode disposed on an organic light emitting layer, an auxiliary electrode layer disposed on a bottom surface of the substrate, a plurality of insulating films covering a top surface of the substrate, And a through auxiliary electrode which connects the cathode electrode and the auxiliary electrode layer.

Accordingly, since the auxiliary electrode structure according to the present invention is electrically connected to the auxiliary electrode layer disposed on the bottom surface of the substrate through the through-hole auxiliary electrode, the electrical conductivity of the cathode electrode can be stably secured.

According to another aspect of the present invention, there is provided an auxiliary electrode layer electrically connected to a cathode electrode through a through auxiliary electrode penetrating the outside of a pixel region. Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring, the data wiring, etc., it is possible to maximize the aperture ratio and to secure the electric conductivity of the cathode electrode, thereby ensuring stable luminance uniformity over the entire panel area.

The auxiliary electrode structure and the organic electroluminescent display device having the auxiliary electrode structure according to the present invention can secure the electric conductivity of the cathode electrode stably because the cathode electrode is electrically connected to the auxiliary electrode layer disposed on the bottom surface of the substrate through the through auxiliary electrode.

Accordingly, in the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, the external voltage Vss is applied to the cathode electrode, the through auxiliary electrode, and the auxiliary electrode layer.

In the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, an auxiliary electrode layer electrically connected to the cathode electrode through the through auxiliary electrode penetrating the outside of the pixel region is disposed on the bottom surface of the substrate. Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring, the data wiring, etc., it is possible to maximize the aperture ratio and to secure the electric conductivity of the cathode electrode, thereby ensuring stable luminance uniformity over the entire panel area.

Meanwhile, the auxiliary electrode structure and the organic light emitting display device having the auxiliary electrode structure according to the present invention may be disposed under the buffer layer on the upper surface of the substrate, not on the back surface of the substrate.

Accordingly, in the auxiliary electrode structure and the organic light emitting display device having the auxiliary electrode structure according to the present invention, the cathode electrode is electrically connected to the auxiliary electrode layer disposed between the top surface of the substrate and the buffer layer through the through auxiliary electrode, .

As a result, in the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, the auxiliary electrode layer electrically connected to the cathode electrode through the dummy auxiliary electrode and the through auxiliary electrode penetrating the outside of the pixel region, . Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring, the data wiring, etc., it is possible to maximize the aperture ratio and secure the electric conductivity of the cathode electrode, thereby ensuring stable luminance uniformity in the entire panel area .

The auxiliary electrode structure and the organic electroluminescent display device having the auxiliary electrode structure according to the present invention can secure the electric conductivity of the cathode electrode stably because the cathode electrode is electrically connected to the auxiliary electrode layer disposed on the bottom surface of the substrate through the through auxiliary electrode.

Accordingly, in the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, the external voltage Vss is applied to the cathode electrode, the through auxiliary electrode, and the auxiliary electrode layer.

In the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, an auxiliary electrode layer electrically connected to the cathode electrode through the through auxiliary electrode penetrating the outside of the pixel region is disposed on the bottom surface of the substrate. Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring, the data wiring, etc., it is possible to maximize the aperture ratio and to secure the electric conductivity of the cathode electrode, thereby ensuring stable luminance uniformity over the entire panel area.

Meanwhile, the auxiliary electrode structure and the organic light emitting display device having the auxiliary electrode structure according to the present invention may be disposed under the buffer layer on the upper surface of the substrate, not on the back surface of the substrate.

Accordingly, in the auxiliary electrode structure and the organic light emitting display device having the auxiliary electrode structure according to the present invention, the cathode electrode is electrically connected to the auxiliary electrode layer disposed between the top surface of the substrate and the buffer layer through the through auxiliary electrode, .

As a result, in the auxiliary electrode structure and the organic light emitting display having the auxiliary electrode structure according to the present invention, the auxiliary electrode layer electrically connected to the cathode electrode through the dummy auxiliary electrode and the through auxiliary electrode penetrating the outside of the pixel region, . Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring, the data wiring, etc., it is possible to maximize the aperture ratio and secure the electric conductivity of the cathode electrode, thereby ensuring stable luminance uniformity in the entire panel area .

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a general top emission organic light emitting display; FIG.
2 is a perspective view illustrating an auxiliary electrode structure according to a first embodiment of the present invention;
3 is a cross-sectional view illustrating an auxiliary electrode structure according to a first embodiment of the present invention.
4 is a cross-sectional view illustrating an organic light emitting display device according to a first embodiment of the present invention.
5 is a plan view schematically showing an organic light emitting display device according to a first embodiment of the present invention.
6 is an enlarged cross-sectional view showing a connection portion between the second electrode and the Vss supply wiring in FIG.
FIG. 7 is a perspective view illustrating an auxiliary electrode structure according to a second embodiment of the present invention; FIG.
8 is a cross-sectional view illustrating an auxiliary electrode structure according to a second embodiment of the present invention;
9 is a cross-sectional view illustrating an organic light emitting display device according to a second embodiment of the present invention.

The above and other objects, features, and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings, which are not intended to limit the scope of the present invention. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to denote the same or similar elements.

Hereinafter, an auxiliary electrode structure according to a preferred embodiment of the present invention and an organic light emitting display having the same will be described in detail with reference to the accompanying drawings.

FIG. 2 is a perspective view illustrating an auxiliary electrode structure according to a first embodiment of the present invention, and FIG. 3 is a cross-sectional view illustrating an auxiliary electrode structure according to the first embodiment of the present invention.

2 and 3, the auxiliary electrode structure of the organic light emitting display 100 according to the first exemplary embodiment of the present invention includes an organic electroluminescent diode (not shown), a plurality of insulating films (PAS) An electrode layer 105 and a penetrating auxiliary electrode 130.

The organic light emitting diode includes a first electrode (not shown) connected to a thin film transistor (not shown) disposed on the substrate 110, an organic light emitting layer (not shown) disposed on the first electrode, And a second electrode 180 disposed thereon. At this time, the first electrode may be configured as an anode and the second electrode 180 may be configured as a cathode, and a detailed description thereof will be described later.

A buffer layer (not shown) may be disposed on the substrate 110 to prevent deterioration of the characteristics of the semiconductor layer due to the release of alkali ions dissolved from the inside of the substrate 110 when the semiconductor layer (not shown) is crystallized.

A plurality of insulating films PAS cover the upper surface of the substrate 110. The plurality of insulating films PAS may include a first insulating film (not shown), which is a gate insulating film sequentially disposed on the substrate 110, and a second insulating film (not shown), which is an interlayer insulating film. The plurality of insulating films PAS may further include a protective film (not shown) and a flattening film (not shown) disposed on the second insulating film.

The auxiliary electrode layer 105 is disposed on the lower surface of the substrate 110. It is preferable that the auxiliary electrode layer 105 is disposed over the entire display area of the lower surface of the substrate 110. This is because even if the thickness of the auxiliary electrode layer 105 is reduced, This is because electric conductivity can be ensured.

Since the light emitted from the organic light emitting diode is emitted upward, the organic light emitting display 100 according to the first exemplary embodiment of the present invention is formed with the auxiliary electrode layer 105 on the entire display area of the lower surface of the substrate 110, The organic light emitting diode does not have any influence.

The auxiliary electrode layer 105 is electrically connected to the second electrode 180 of the organic light emitting diode through a through auxiliary electrode 130 to be described later to reduce the surface resistance of the second electrode 180. More specifically, the auxiliary electrode layer 105 may be formed of a material selected from the group consisting of Al, Cu, Au, Pt, Pd, Ag, Mo, Ti, Nd and In. good. The auxiliary electrode layer 105 may have a single-layer structure made of the above-described metal material, but is not limited thereto, and may have a multilayer structure of two or more layers.

The penetrating auxiliary electrode 130 penetrates the insulating film PAS and the substrate 110 to electrically connect the second electrode 180 and the auxiliary electrode layer 105 of the organic light emitting diode. In this case, it is preferable that the penetrating auxiliary electrode 130 is formed so as to pass through the outside of the pixel region P on the substrate 110. This is because when the penetrating auxiliary electrode 130 is designed in the pixel region P, It can be.

Accordingly, the second electrode 180, which is the cathode electrode, is electrically connected to the auxiliary electrode layer 105 disposed on the lower surface of the substrate 110 through the penetrating auxiliary electrode 130, The conductivity can be secured. Therefore, a constant voltage, for example, Vss voltage, is applied to the second electrode 180, the penetrating auxiliary electrode 130, and the auxiliary electrode layer 105 from the outside.

The organic light emitting display 100 according to the first embodiment of the present invention includes an auxiliary electrode layer 130 electrically connected to the cathode electrode 180 through a through auxiliary electrode 130 passing through the outside of the pixel region P, (105) is disposed on the lower surface of the substrate (110). As a result, there is no possibility of overlapping with the signal wiring (not shown) of the gate wiring, the data wiring, etc., thereby maximizing the aperture ratio and ensuring the electrical conductivity of the cathode electrode 180, Uniformity can be ensured.

This will be described more specifically with reference to the accompanying drawings.

FIG. 4 is a cross-sectional view illustrating an organic light emitting display device according to a first embodiment of the present invention, which will be described in conjunction with FIG. 2. FIG.

2 and 4, an organic light emitting display 100 according to a first embodiment of the present invention includes an auxiliary electrode layer 105, a buffer layer 115, a thin film transistor Tr, a plurality of insulating films PAS, A passivation auxiliary electrode 130, a planarization layer 145, a first electrode 160, a dummy auxiliary electrode 165, a bank layer 155, an organic emission layer 170, and a second electrode 180.

The auxiliary electrode layer 105 is disposed on the lower surface of the substrate 110. At this time, the substrate 110 may be any one of glass, plastic, and stainless steel. It is preferable that the auxiliary electrode layer 105 is disposed over the entire display area of the lower surface of the substrate 110. This is because even if the thickness of the auxiliary electrode layer 105 is reduced, This is because electric conductivity can be ensured.

The buffer layer 115 is disposed to cover the upper surface of the substrate 110. The buffer layer 115 serves to prevent deterioration of the characteristics of the semiconductor layer 140 due to the release of the alkali ions that are released from the inside of the substrate 110 when the semiconductor layer 140 is crystallized.

The thin film transistor Tr is disposed on the buffer layer 115, and a plurality of insulating films PAS covers the buffer layer 115.

The thin film transistor Tr includes a semiconductor layer 140 disposed on the buffer layer 115, a first insulating layer 125 covering the semiconductor layer 140, a first insulating layer 125 overlapping the semiconductor layer 140, A second insulating film 135 covering the gate electrode 122 and a source electrode 122 connected to the semiconductor layer 140 and spaced apart from each other with the gate electrode 122 therebetween, And drain electrodes 132 and 134, respectively.

At this time, the semiconductor layer 140 is made of silicon, and includes an active region 140a disposed at the center and forming a channel, source and drain regions 140b having high concentration impurity doped on both sides of the active region 140a, , And 140c.

The source and drain electrodes 132 and 134 are electrically connected to the source and drain regions 140a and 140b of the semiconductor layer 140 through first and second semiconductor layer contact holes (not shown) 140b and 140c, respectively.

At this time, the thin film transistor Tr forms a P or N type transistor according to impurities doped in the source and drain regions 140b and 140c. In the case of the P-type transistor, the source and drain regions 140b and 140c of the semiconductor layer 140 are doped with a group III element, for example, boron (B). In the case of an N-type transistor, the source and drain regions 140b and 140c of the semiconductor layer 140 are doped with a Group 5 element such as phosphorus (P). In the P-type transistor, holes are used as carriers and electrons are used as carriers in N-type transistors.

As described above, the plurality of insulating films PAS may include a first insulating film 125, which is a gate insulating film, and a second insulating film 135, which is an interlayer insulating film, but the present invention is not limited thereto. A plurality of insulating films PAS are formed over the first insulating film 125 and the second insulating film 135 as well as a protective film (not shown) and a planarizing film (not shown) disposed on the second insulating film 135 145).

The penetrating auxiliary electrode 130 is disposed apart from the thin film transistor Tr. The penetrating auxiliary electrode 130 is electrically connected to the auxiliary electrode layer 105 through the through holes TH through the first and second insulating films 125 and 135, the buffer layer 115 and the substrate 110, which are a plurality of insulating films PAS. ).

More specifically, the penetrating auxiliary electrode 130 includes an electrode portion 130a and a penetrating portion 130b. The electrode portion 130a of the penetrating auxiliary electrode is disposed on the second insulating film 135 and is spaced apart from the drain electrode 134. [ The penetrating portion 130b of the penetrating auxiliary electrode extends from the electrode portion 130a of the penetrating auxiliary electrode and penetrates through the first and second insulating films 125 and 135 and the buffer layer 115 and the substrate 110, Is disposed on the inner wall of the hole (TH) and on the auxiliary electrode layer (105), and is electrically connected to the auxiliary electrode layer (105).

At this time, it is preferable that the through auxiliary electrode 130 having the electrode portion 130a and the through portion 130b is formed so as to pass through the outside of the pixel region P on the substrate 110, This is because the aperture ratio may be lowered when the penetrating auxiliary electrode 130 is designed.

The planarization film 145 covers the second insulating film 135 and has first and second contact holes CH1 and CH2 exposing a part of the thin film transistor Tr and a part of the through auxiliary electrode 130, . The planarization layer 145 is formed by depositing an organic insulating material such as a photoacid.

The first electrode 160 is connected to the drain electrode 134 of the thin film transistor Tr through the first contact hole CH1. The first electrode 160 may be formed of a transparent conductive material having a relatively large work function value to serve as an anode electrode.

The dummy auxiliary electrode 165 is electrically connected to the penetrating auxiliary electrode 130 through the second contact hole CH2. The dummy auxiliary electrode 165 is formed of the same material as the first electrode 160 in the same layer. Accordingly, the dummy auxiliary electrode 165 may be made of a transparent conductive material in the same manner as the first electrode 160. It is preferable that the dummy auxiliary electrode 165 is formed so as to pass through the outside of the pixel region P on the substrate 110 like the through auxiliary electrode 130.

The bank layer 155 is disposed on the planarization layer 145 and has first and second bank holes BH1 and BH2 for exposing the first electrode 160 and the dummy auxiliary electrode 165. [ At this time, the bank layers 155 may be arranged in a matrix type of a lattice structure. The bank layer 155 may be formed of any one selected from a black resin, a graphite powder, a gravure ink, a black spray, and a black enamel which are photosensitive organic insulating materials having a low dielectric constant.

The organic light emitting layer 170 is disposed on the first electrode 160. The organic light emitting layer 170 may be patterned for each pixel region P. The hole injection layer, the hole transporting layer, the emitting material layer, the electron transporting layer, and the hole transporting layer may be formed on the organic light emitting layer 170 to enhance the light emitting efficiency. Layer structure of an electron transporting layer and an electron injection layer.

The second electrode 180 is connected to the organic light emitting layer 170 at one end and electrically connected to the dummy auxiliary electrode 165 at the other end through the first and second bank holes BH1 and BH2. At this time, the second electrode 180 may be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

The first electrode 160, the organic light emitting layer 170 and the second electrode 180 constitute an organic light emitting diode E. The first electrode 160 serves as an anode and the second electrode 160 serves as an anode. (180) may be constituted by a cathode.

When a predetermined voltage is applied to the first electrode 160 and the second electrode 180 according to a selected color signal, the organic light emitting diode E is turned on and the holes injected from the first electrode 160 and the second electrode 180 Is transported to the organic light emitting layer 170 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted in the form of visible light. At this time, the emitted light passes through the transparent second electrode 180 and is emitted to the outside.

FIG. 5 is a plan view schematically illustrating an organic light emitting display according to a first embodiment of the present invention, and FIG. 6 is an enlarged cross-sectional view illustrating a connection portion between a second electrode and a Vss supply wiring in FIG.

5 and 6, the organic light emitting display 100 according to the first embodiment of the present invention includes a gate driver 127 and data (not shown) disposed on one side and the other side of the substrate 110, A driving unit 137 and a gate driving IC 128 mounted on the gate TCP 126 and a data driving IC 138 mounted on the data TCP 136. [

The gate driver 127 is electrically connected to the substrate 110 through a plurality of gate TCPs 126 and the data driver 137 is electrically connected to the substrate 110 through a plurality of data TCPs 136. [ do.

A plurality of gate wirings (not shown) are arranged along a first direction and a plurality of data wirings (not shown) intersect with a first direction in a display area AA of the substrate 110 Are arranged along the second direction. Further, a power supply line (not shown) spaced apart in parallel with the plurality of data lines may be further disposed in the display area AA of the substrate 110. [

At this time, the data driving IC 138 converts the image information, which is a digital signal, into an analog signal and supplies the analog signal to a plurality of data wirings arranged in the display area AA of the substrate 110.

In particular, the second electrode 180, which is the cathode electrode, covers the entire surface of the display area A and can be partially extended to the non-display area NAA.

The second electrode 180 is electrically connected to the Vss supply wiring 185 disposed in the non-display area NAA. The Vss power from the outside is supplied to the second electrode 180 through the Vss supply wiring 185 connected to the data TCP 138 and the data TCP 138. [ 6, the Vss supply line 185 is formed of the same material as the second electrode 180. However, the Vss supply line 185 is illustratively formed of a gate metal or a data metal. Alternatively, the Vss supply wiring 185 may have a double-layer structure composed of a gate metal and a data metal.

Although not shown in the drawing, the Vss power supply wiring 185 may be electrically connected to the auxiliary electrode layer 105 disposed on the lower surface of the substrate 110, instead of being electrically connected to the second electrode 180 . In this case, it is desirable to further design a Vss-penetrating electrode (not shown) for electrically connecting the Vss power supply wiring 185 and the auxiliary electrode layer 105. The Vss penetrating electrode may be designed to penetrate the non-display area NAA on the substrate 110 and may be formed simultaneously with the penetrating auxiliary electrode 130 (FIG. 4) disposed in the display area AA.

The organic light emitting display 100 according to the first embodiment of the present invention has a structure in which the second electrode 180 which is a cathode electrode is electrically connected to the dummy auxiliary electrode 165, Since the second electrode 180 is electrically connected to the auxiliary electrode layer 105 disposed on the lower surface of the substrate 110 via the auxiliary electrode 130, the electrical conductivity of the second electrode 180 can be stably secured, . ≪ / RTI > Accordingly, a predetermined voltage, for example, a voltage Vss is applied to the second electrode 180, the dummy auxiliary electrode 165, the through auxiliary electrode 130, and the auxiliary electrode layer 105 from the outside.

In the organic light emitting display 100 according to the first embodiment of the present invention, the auxiliary electrode layer 105 is disposed over the entire display area of the lower surface of the substrate 110, The second electrode 180 and the auxiliary electrode layer 105 are electrically connected to each other through the auxiliary electrode 130 and the dummy auxiliary electrode 165.

As a result, the organic light emitting display 100 according to the first embodiment of the present invention includes the dummy auxiliary electrode 165 passing through the outside of the pixel region P and the second electrode 180 are electrically connected to the auxiliary electrode layer 105 on the lower surface of the substrate 110. Accordingly, since there is no possibility of overlapping with the signal wiring such as the gate wiring and the data wiring, the electrical conductivity of the second electrode 180 can be secured while maximizing the aperture ratio, thereby ensuring stable luminance uniformity in the entire panel area .

FIG. 7 is a perspective view illustrating an auxiliary electrode structure according to a second embodiment of the present invention, and FIG. 8 is a cross-sectional view illustrating an auxiliary electrode structure according to a second embodiment of the present invention.

7 and 8, the organic light emitting display device 200 according to the second embodiment of the present invention includes the auxiliary electrode layer 205, The display device (100 of FIG. 2) has substantially the same configuration as that of the display device (100 of FIG. 2), and duplicate explanation will be omitted and differences will be mainly described.

The organic EL display device 200 according to the second embodiment of the present invention is different from the first embodiment in that the auxiliary electrode layer 205 is disposed between the substrate 210 and the buffer layer 215. [ At this time, it is preferable that the auxiliary electrode layer 205 is disposed over the entire display region on the upper surface of the substrate 210. This is because even if the thickness of the auxiliary electrode layer 205 is reduced Sufficient electric conductivity can be ensured.

At this time, the penetrating auxiliary electrode 230 penetrates the plurality of insulating films PAS and the buffer layer 215 to electrically connect the second electrode 280 and the auxiliary electrode layer 205.

Accordingly, the second electrode 280, which is a cathode electrode, is electrically connected to the auxiliary electrode layer 205 disposed between the upper surface of the substrate 210 and the buffer layer 215 through the through auxiliary electrode 230, The electric conductivity of the electrode 280 can be ensured. Therefore, a constant voltage, for example, Vss voltage, is applied to the second electrode 280, the penetrating auxiliary electrode 230, and the auxiliary electrode layer 205 from the outside.

The organic light emitting display 200 according to the second embodiment of the present invention includes an auxiliary electrode 230 electrically connected to the second electrode 280 through a through auxiliary electrode 230 passing through the outside of the pixel region P, Since the electrode layer 205 is disposed between the upper surface of the substrate 210 and the buffer layer 215 so that there is no possibility of overlapping with the signal wiring such as the gate wiring and the data wiring, the aperture ratio can be maximized, It is possible to secure a stable luminance uniformity in the entire area of the panel.

This will be described more specifically with reference to the accompanying drawings.

FIG. 9 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention, which will be described in conjunction with FIG.

7 and 9, an organic light emitting display 200 according to a second exemplary embodiment of the present invention includes an auxiliary electrode layer 205, an organic light emitting display (100 in Fig. 4), so that redundant description will be omitted and differences will be mainly explained.

The auxiliary electrode layer 205 of the organic light emitting display device 200 according to the second embodiment of the present invention is disposed between the substrate 210 and the buffer layer 215 disposed on the substrate 210. It is preferable that the auxiliary electrode layer 205 is disposed over the entire display region on the upper surface of the substrate 210. This is because even if the thickness of the auxiliary electrode layer 205 is designed to be as large as possible on the upper surface of the substrate 210 This is because electric conductivity can be ensured.

A plurality of insulating films PAS covers the thin film transistor Tr. At this time, the plurality of insulating films PAS may include a first insulating film 225, which is a gate insulating film, and a second insulating film 235 that is an interlayer insulating film, which are sequentially disposed on the upper surface of the substrate 210. The plurality of insulating films PAS may further include a protective film (not shown) and a planarizing film 245 disposed on the second insulating film 235.

At this time, the penetrating auxiliary electrode 230 is disposed apart from the thin film transistor Tr. The penetrating auxiliary electrode 230 is electrically connected to the auxiliary electrode layer 205 through the first and second insulating films 225 and 235 which are a plurality of insulating films PAS and the through hole TH through the buffer layer 215 do.

Accordingly, in the organic light emitting display device 200 according to the second embodiment of the present invention, the second electrode 280, which is a cathode electrode, is electrically connected to the dummy auxiliary electrode 265, Since the second electrode 280 is electrically connected to the auxiliary electrode layer 205 disposed between the substrate 210 and the buffer layer 215 via the through-hole auxiliary electrode 230, the electrical conductivity of the second electrode 280 can be stably secured, It is possible to prevent the resistance from increasing in advance. Accordingly, a predetermined voltage, for example, a voltage Vss is applied to the second electrode 280, the dummy auxiliary electrode 265, the auxiliary electrode layer 230, and the auxiliary electrode layer 205 from the outside.

Accordingly, the organic light emitting display device 200 according to the second embodiment of the present invention is similar to the organic light emitting display device according to the first embodiment in that an auxiliary electrode layer 205 is formed on the entire display region on the substrate 210 And the second electrode 280 and the auxiliary electrode layer 205 are electrically connected to each other through the penetrating auxiliary electrode 230 and the dummy auxiliary electrode 265 passing through the outside of the pixel region P. [

As a result, the organic light emitting display device 200 according to the second embodiment of the present invention includes the dummy auxiliary electrode 265 passing through the outside of the pixel region P, and the auxiliary electrode 230 through the second electrode Since the auxiliary electrode layer 205 electrically connected to the substrate 210 and the buffer layer 215 is disposed between the substrate 210 and the buffer layer 215, there is no possibility of overlapping with the signal wiring such as the gate wiring and the data wiring, It is possible to secure the electrical conductivity of the second electrode 280 while ensuring stable luminance uniformity over the whole area of the panel.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is therefore to be understood that such changes and modifications are intended to be included within the scope of the present invention unless they depart from the scope of the present invention.

100: organic electroluminescent display device 105: auxiliary electrode layer
110: substrate 115: buffer layer
122: gate electrode 125: first insulating film
130: penetrating auxiliary electrode 132: source electrode
134: drain electrode 135: second insulating film
140: semiconductor layer 145: planarization film
155: bank layer 160: first electrode
165: dummy auxiliary electrode 170: organic light emitting layer
180: second electrode Tr: thin film transistor
CH1, CH2: first and second contact holes TH: through hole
BH1, BH2: First and second bank holes

Claims (9)

An organic light emitting diode having a first electrode connected to a thin film transistor disposed on a substrate, an organic light emitting layer disposed on the first electrode, and a second electrode arranged on the organic light emitting layer;
A plurality of insulating films covering the upper surface of the substrate;
An auxiliary electrode layer disposed on the bottom surface of the substrate; And
A plurality of insulating layers and a plurality of insulating layers, a plurality of insulating layers, a plurality of insulating layers, a plurality of insulating layers,
/ RTI >
The method according to claim 1,
The auxiliary electrode layer
And an auxiliary electrode structure disposed on the entire bottom surface of the substrate.
The method according to claim 1,
The auxiliary electrode layer
Layer structure having at least one selected from Al, Cu, Au, Pt, Pd, Ag, Mo, Ti, Nd and In.
An organic light emitting diode having a first electrode connected to a thin film transistor disposed on a substrate, an organic light emitting layer disposed on the first electrode, and a second electrode arranged on the organic light emitting layer;
A plurality of insulating films covering the upper surface of the substrate;
A buffer layer disposed between the substrate and the thin film transistor;
An auxiliary electrode layer disposed between the substrate and the buffer layer; And
A penetrating auxiliary electrode penetrating the plurality of insulating films and the buffer layer to connect the second electrode and the auxiliary electrode layer;
/ RTI >
5. The method of claim 4,
The auxiliary electrode layer
And an auxiliary electrode structure disposed over the entire display region on the upper surface of the substrate.
An auxiliary electrode layer disposed on a bottom surface of the substrate;
A buffer layer covering the upper surface of the substrate;
A thin film transistor disposed on the buffer layer;
A plurality of insulating films covering the upper portion of the buffer layer;
A plurality of insulating layers, a buffer layer and a penetrating auxiliary electrode connected to the auxiliary electrode layer through a through hole passing through the substrate;
A planarizing film covering the uppermost insulating film among the plurality of insulating films and having first and second contact holes exposing a part of the thin film transistor and a part of the through auxiliary electrode, respectively;
A first electrode connected to the thin film transistor through the first contact hole;
A dummy auxiliary electrode connected to the penetrating auxiliary electrode through the second contact hole;
A bank layer disposed on the planarization layer and having first and second bank holes exposing the first electrode and the dummy auxiliary electrode;
An organic light emitting layer disposed on the first electrode;
A second electrode connected to the organic light emitting layer at one end and connected to the dummy auxiliary electrode at the other end through the first and second bank holes;
And an organic electroluminescent display device.
The method according to claim 6,
The thin film transistor
A semiconductor layer disposed on the buffer layer,
A first insulating film covering the semiconductor layer;
A gate electrode disposed on the first insulating film so as to overlap with the semiconductor layer;
A second insulating film covering the gate electrode,
And source and drain electrodes which are spaced apart from each other with the gate electrode therebetween and connected to the semiconductor layer, respectively,
Wherein the plurality of insulating films include the first and second insulating films.
8. The method of claim 7,
The through-
An electrode part disposed on the second insulating film and spaced apart from the drain electrode,
A through hole extending through the first and second insulating films, a buffer layer, and a substrate; and a penetrating portion disposed on the auxiliary electrode layer and connected to the auxiliary electrode layer, the penetrating hole extending from the electrode portion.
An auxiliary electrode layer disposed on an upper surface of the substrate;
A buffer layer covering the auxiliary electrode layer;
A thin film transistor disposed on the buffer layer;
A plurality of insulating films disposed on the buffer layer;
A through auxiliary electrode connected to the auxiliary electrode layer through a plurality of insulating films and a through hole passing through the buffer layer;
A planarizing film covering the uppermost insulating film among the plurality of insulating films and having first and second contact holes exposing a part of the thin film transistor and a part of the through auxiliary electrode, respectively;
A first electrode connected to the thin film transistor through the first contact hole;
A dummy auxiliary electrode connected to the penetrating auxiliary electrode through the second contact hole;
A bank layer disposed on the planarization layer and having first and second bank holes exposing the first electrode and the dummy auxiliary electrode;
An organic light emitting layer disposed on the first electrode;
A second electrode connected to the organic light emitting layer at one end and connected to the dummy auxiliary electrode at the other end through the first and second bank holes;
And an organic electroluminescent display device.

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