KR20170063625A - Positive photosensitive resin composition, method for producing patterned cured film, cured product, interlayer insulating film, cover coat layer, surface protective film and electronic component - Google Patents

Abstract

A positive photosensitive resin composition comprising (a) an alkali-soluble resin, (b) an onium salt generating an acid by i-line exposure, (c) a solvent, and (d) a crosslinking agent, Wherein the total of the components (a), (b) and (d) is 88 mass% or more based on the total mass of the photosensitive resin composition.

Description

TECHNICAL FIELD [0001] The present invention relates to a positive photosensitive resin composition, a method for producing a patterned cured film, a cured product, an interlayer insulating film, a cover coat layer, a surface protective film, , SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENT}

The present invention relates to a positive photosensitive resin composition, a process for producing a patterned cured film using the same, a cured product, an interlayer insulating film, a cover coat layer, a surface protective film and an electronic component.

BACKGROUND ART Conventionally, polyimide and polybenzoxazole having excellent heat resistance, electric characteristics, and mechanical characteristics have been used for the surface protective film and interlayer insulating film of semiconductor devices. In recent years, a photosensitive polyimide in which photosensitive properties are imparted to polyimide itself has been used. By using such a photosensitive polyimide, it is possible to simplify the production process of the patterned cured film and shorten the complicated manufacturing process.

In the production of the patterned cured film, an organic solvent such as N-methylpyrrolidone is used for development. However, in consideration of the environment, a method of mixing a naphthoquinone diazide compound as a photosensitive agent to a polyimide or polyimide precursor (See, for example, Patent Document 1 or 2).

As a resin composition capable of being developed with an aqueous alkali solution, a resin composition containing polybenzoxazole, polybenzoxazole precursor or novolac resin has been proposed (see, for example, Patent Document 3).

On the other hand, in recent years, high integration and miniaturization of semiconductor devices have progressed, and there has been a demand for a package substrate to be made thinner, smaller, and at lower cost. Therefore, a package structure which does not use an under bump metal (UBM) layer used for improving the reliability of a semiconductor device has been proposed (see Non-Patent Document 1 or 2).

Patent Document 1: JP-A-64-60630 Patent Document 2: U.S. Patent No. 4395482 Patent Document 3: JP-A-2009-265520

Non-Patent Document 1: "ADVANCES IN WLCSP TECHNOLOGIES FOR GROWING MARKET NEEDS", Abstracts of 6th Annual International Conference on Wafer Level Packaging, [2009-10-27 / 10-30] Non-Patent Document 2: "TECHNOLOGY SOLUTIONS FOR A DYNAMIC AND DIVERSE WLCSP MARKET", Abstracts of 7th Annual International Wafer Level Packaging Conference, 2010-11-14, Santa Clara, USA Non-Patent Document 3: Hiroshi Ito et al., Evaluation of Onium Salt Cationic Photoinitiators as Novel Dissolution Inhibitor for Novolac Resin, J. Electrochem. Soc. 2322-2327 (1988)

Summary of the Invention

In the package structure in which the under bump metal (UBM) layer is removed, in order to design the pattern curing film provided on the outermost layer to reinforce the bumps to secure reliability, the thickness of the patterned cured film formed by using the positive photosensitive resin composition, It is preferable to increase the thickness from the conventional film thickness (10 탆 or less).

However, when a thick film is formed using a positive photosensitive resin composition using a conventional naphthoquinone diazide compound, the transmittance at the photosensitive wavelength is lowered, the sensitivity is deteriorated, and the problem of long development time . On the other hand, in a resin composition having high sensitivity, there is a problem that although the development time is short, unexposed portions are also developed.

Further, as an alkali positive photosensitive resin composition which does not use a naphthoquinone diazide compound, a dissolution-inhibiting positive photosensitive resin composition has been proposed (see Non-Patent Document 3). However, application of a thick film to the dissolution-inhibiting positive photosensitive resin composition is technically difficult.

An object of the present invention is to provide a positive photosensitive resin composition which is excellent in the dissolution contrast between the exposed portion and the unexposed portion in the case of forming a patterned cured film of a thick film and a method of producing a patterned cured film using the same, , A surface protective film and an electronic part.

The present inventors have attempted to form a thick film using a positive photosensitive resin composition comprising an alkali-soluble resin and a naphthoquinone diazide compound. However, the transmittance at the photosensitive wavelength of the coated film was lowered, the sufficient alkali dissolution rate in the exposed portion could not be obtained, and no opening could be obtained at the developing time in the practical range. In addition, it has been found that as the developing time becomes longer, penetration of the developing solution into the unexposed portion occurs, resulting in lowering of the resolution.

Therefore, the inventors of the present invention have found that, as a result of further investigation, the present inventors have found that, as a result of further study, the inventors of the present invention found that a positive (positive) combination of an alkali-soluble resin and an onium salt generating an acid by i- Type photosensitive resin composition, it is possible to exhibit a practically usable dissolution contrast even when forming a patterned cured film of a thick film.

According to the present invention, the following positive photosensitive resin compositions and the like are provided.

(1) A positive photosensitive resin composition comprising (a) an alkali-soluble resin, (b) an onium salt generating an acid by i-line exposure, (c) a solvent, and (d) a crosslinking agent, Wherein the total of the components (a), (b) and (d) is 88% by mass or more based on the total mass of the positive photosensitive resin composition excluding the positive photosensitive resin composition.

(2) A positive photosensitive resin composition containing (a) an alkali-soluble resin, (b) an onium salt generating an acid by i-line exposure, and (c) a solvent, A naphthoquinone diazide compound or an acid-reactive protecting group-containing compound in an amount of 0 to 100 ppm.

(3) The positive-working photosensitive resin composition according to (2), further comprising (d) a crosslinking agent.

(4) The positive-working photoresist composition as described in any one of (1) to (3), wherein the component (a) contains at least one of polyimide, Sensitive resin composition.

<5> The method according to <5>, wherein the component (b) inhibits dissolution of the component (a) in an alkali aqueous solution before i-line exposure and does not inhibit dissolution of the component (a) in an aqueous alkali solution after i- A positive photosensitive resin composition according to any one of claims 1 to 4.

<6> The positive photosensitive resin composition according to any one of items 1 to 5, wherein the component (b) is a compound represented by the following general formula (b-1).

(Wherein X is a counterion, and the aromatic ring may have a substituent.)

<7> The positive photosensitive resin composition according to any one of items 1 to 6, wherein the component (b) is a compound represented by the following formula (b-2).

(In the formula, Me is a methyl group.)

<8> The positive photosensitive resin composition according to any one of items 1 to 7, which is used for forming an interlayer insulating film, a cover coat layer or a surface protective film.

<9> A positive photosensitive resin composition according to any one of items 1 to 7, which is used for forming an interlayer insulating film, a cover coat layer or a surface protective film of a semiconductor device having a UBM free structure.

&Lt; 10 &gt; A positive photosensitive resin composition as described in any one of &lt; 1 &gt; to 9, which is applied onto a substrate and dried to form a photosensitive resin film,

Exposing the obtained photosensitive resin film to a predetermined pattern,

A step of developing the exposed resin film using an aqueous alkaline solution to obtain a patterned resin film,

A step of heat-treating the patterned resin film

Wherein the patterned cured film is formed by a method comprising the steps of:

<11> The method for producing a patterned cured film according to <10>, wherein the temperature of the heat treatment is 250 ° C or lower.

<12> A cured product of the positive photosensitive resin composition according to any one of items 1 to 9.

<13> An interlayer insulating film, cover coat layer or surface protective film using the cured product according to <12>.

<14> An electronic device having an interlayer insulating film, a cover coat layer or a surface protective film according to item 13.

According to the present invention, it is possible to provide a positive photosensitive resin composition that can realize practically usable dissolution contrast even when a patterned cured film of a thick film is formed, a method of producing a patterned cured film using the same, a cured product, an interlayer insulating film, a cover coat layer, Can be provided.

1 is a schematic cross-sectional view showing a manufacturing method of a package structure without a UBM layer.
2 is a schematic cross-sectional view of a semiconductor device having a rewiring structure as an embodiment of the electronic component of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, first and second positive-working photosensitive resin compositions of the present invention, a method for producing a patterned cured film using the same, and embodiments of electronic components will be described in detail. The present invention is not limited to the following embodiments.

In the present specification, "A or B" may include either A or B, or both of them may be included. In addition, the materials exemplified below may be used singly or in combination of two or more, unless otherwise specified. In the present specification, the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless a plurality of substances corresponding to the respective components are present in the composition, unless otherwise specified.

The first and second positive photosensitive resin compositions are collectively referred to as "the positive photosensitive resin composition (resin composition) of the present invention ".

[First positive-working photosensitive resin composition]

(B) an onium salt generating an acid by i-line exposure; (c) a solvent; and (c) and (d) a cross-linking agent, wherein the total amount of the components (a), (b) and (d) is 88% by mass or more based on the total mass of the positive- Or more. The total of the above components (a), (b) and (d) is preferably 90 mass% or more, more preferably 95 mass% or more, further preferably 98 mass% or more and 100 mass%.

(B) an onium salt which generates an acid by i-line exposure; (c) a solvent; and (d) an organic solvent. And a crosslinking agent, and the naphthoquinone diazide compound is contained in an amount of 0 to 100 parts per 100 parts by mass of the component (a). The second embodiment is preferably such that the total of the components (a), (b) and (d) is 88 mass% or more based on the total mass of the positive photosensitive resin composition excluding the solvent (c) Or more, more preferably 95 mass% or more, further preferably 98 mass% or more, and may be 100 mass%.

(A), (b), (c) and (d) may be simply referred to. The first and second aspects are collectively referred to as the first positive photosensitive resin composition of the present invention. Hereinafter, each component will be described.

(component (a): alkali-soluble resin)

The alkali-soluble resin is not particularly limited, but it is preferable that the resin has high electrical insulation. For example, a polyimide precursor, a polyimide precursor, a polybenzoxazole, a polybenzoxazole precursor, a polyamide, a polyamideimide, a polyhydroxystyrene, a novolak resin, a norbornene resin, an epoxy resin, .

Particularly, from the viewpoints of both insulation and mechanical characteristics, it is preferable to use polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, novolak resin or polyhydroxystyrene.

The alkali-soluble resin is usually developed with an aqueous alkali solution. Therefore, it is preferable that it is soluble in an aqueous alkali solution.

Examples of the aqueous alkali solution include an aqueous solution of an organic ammonium such as an aqueous solution of tetramethylammonium hydroxide (TMAH), an aqueous solution of a metal hydroxide, and an aqueous solution of an organic amine. In general, it is preferable to use a TMAH aqueous solution having a concentration of 2.38% by weight. Therefore, the component (a) is preferably soluble in aqueous TMAH solution.

One criterion that the component (a) is soluble in an aqueous alkali solution will be described below. The component (a) is dissolved in an arbitrary solvent to prepare a solution, which is spin-coated on a substrate such as a silicon wafer to form a resin film having a thickness of about 5 占 퐉. This is immersed in either tetramethylammonium hydroxide aqueous solution, metal hydroxide aqueous solution or aqueous organic amine solution at 20 to 25 占 폚. As a result, when dissolved and becomes a solution, the component (a) used is judged to be soluble in an aqueous alkali solution.

The polyimide precursor preferably has a structure represented by formula (1).

In the formula (1), A is any one of the tetravalent organic groups represented by the following formulas (2a) to (2e) and B is a divalent organic group represented by the following formula (3). R ¹ and R ² are each independently a hydrogen atom or a monovalent organic group.

In the formula (2d), X and Y independently represent a bivalent group or a single bond which is not conjugated with the benzene ring to which they are bonded. In the formula (2e), Z represents an oxygen atom or a sulfur atom.

In formula (3), R ³ to R ¹⁰ each independently represent a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R ³ to R ¹⁰ represents a fluorine atom, a methyl group or a trifluoromethyl group.

Examples of the monovalent organic group represented by R ¹ and R ² in the formula (1) include alkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), fluoroalkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms) And the like.

Examples of the bivalent group that is not conjugated with the benzene ring in X and Y in the formula (2d) include an oxygen atom, a dimethylmethylene group, a bis (trifluoromethyl) methylene group, a dimethylsilylene group, a methyltrifluoromethylmethylene group And the like.

B in the formula (1) is a structure derived from a diamine used as a raw material and is a divalent organic group represented by the formula (3).

Examples of the monovalent organic group represented by R ³ to R ¹⁰ include a methyl group, a trifluoromethyl group, and the like. From the viewpoint of good i-line transmittance and low stress, it is preferable that two or more are a methyl group or a trifluoromethyl group.

Examples of the polyimide include polyimide formed from the above polyimide precursor.

The polybenzoxazole precursor is a precursor having a structural unit represented by the following formula (4).

(In the formula (4), U is a single bond or a divalent group, and W is a divalent group.)

The divalent group of U in the formula (4) is preferably a group containing an aliphatic chain structure having 1 to 30 carbon atoms, more preferably a group containing a structure represented by the following formula (UV1).

(In the formula (UV1), R ¹¹ and R ¹² are each independently a hydrogen atom, a fluorine atom, an alkyl group having 1 to 6 carbon atoms or a fluorinated alkyl group having 1 to 6 carbon atoms, and a is an integer of 1 to 30.

R ¹¹ and R ¹² in the formula (UV1) are preferably a methyl group or a trifluoromethyl group from the viewpoint of transparency of the polymer, and more preferably a trifluoromethyl group.

a is preferably an integer of 1 to 5.

The divalent group of W is preferably a structure derived from a dicarboxylic acid. Examples of such raw dicarboxylic acids include dodecanedioic acid, isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) Hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxy Phenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, Dicarboxylic acid, and the like.

Examples of the polybenzoxazole include polybenzoxazole formed from the polybenzoxazole precursor.

Examples of the novolak resin include aromatic hydroxides such as phenol, cresol, xylenol, resorcinol and hydroquinone, and phenols of at least one selected from the group consisting of alkyl substituted or halogen substituted aromatic compounds thereof with formaldehyde, acetaldehyde, benzaldehyde For example, phenol and formaldehyde resins, cresol and formaldehyde resins, phenol, cresol and formaldehyde co-condensation resins, and the like.

The molecular weight of the polymer of component (a) preferably has a weight average molecular weight in terms of polystyrene of 10,000 to 100,000, more preferably 15,000 to 100,000, and even more preferably 20,000 to 85,000. If the weight average molecular weight is less than 10,000, the solubility in an alkali developer may be too high. If the weight average molecular weight is more than 100,000, the solubility in a solvent may deteriorate or the viscosity of a solution may increase.

The weight average molecular weight can be measured by a gel permeation chromatography method and can be determined by conversion using a standard polystyrene calibration curve.

(component (b): an onium salt having an i-line sensitivity)

The component (b) is not particularly limited as long as it is an onium salt having an i-line sensitivity, but it is preferably a compound having an iodonium structure or a sulfonium structure. From the viewpoint of high contrast, a compound having an iodonium structure is more preferable.

The component (b) is, for example, a resin composition which is applied onto a substrate to irradiate light to the resin film formed, and has a function of giving a difference in the solubility of the exposed portion and the unexposed portion in the developer .

The component (b) is preferably one having a high compatibility with the component (a).

The component (b) is preferably a compound which inhibits dissolution of the component (a) in an aqueous alkali solution before i-line exposure and does not inhibit dissolution of the component (a) in an aqueous alkali solution after i-line exposure. When the patterned cured film of the thick film is formed by using the resin composition of the present invention by opening the inhibition of dissolution in the exposed portion after i-line exposure, patterning can be performed at sensitivity and development time within the practical range.

As the component (b), for example, a compound represented by the following general formula (b-1) can be used.

(Wherein X is a large anion, and the aromatic ring may have a substituent.)

The aromatic cyclic substituent is not particularly limited so long as it does not impair the effect of the present invention. Specific examples thereof include an alkyl group, an alkenyl group, an alkoxy group, a trialkylsilyl group, a group in which a part or all of the hydrogen atoms of the respective groups are substituted with fluorine atoms, a chlorine atom, a bromine atom and a fluorine atom. The aromatic ring may have a plurality of substituents.

Examples of X ^- include p-toluenesulfonic acid ion, trifluoromethanesulfonic acid ion, hexafluoroborohydride ion, 9,10-dimethoxyanthracene-2-sulfonic acid ion, 8-anilinonaphthalene- Ion, methylsulfonic acid ion, sulfate ion, nitrate ion, trichloroacetic acid ion, chloride ion and the like.

Specific examples of the compound having an iodonium structure include diphenyliodonium-9,10-dimethoxyanthracene-2-sulfonate, diphenyliodonium-8-anilinonaphthalene-1-sulfonate, diphenyliodonium sulfo Diphenyliodonium trifluoromethylsulfonate, diphenyliodonium nonafluorobutanesulfonate, diphenyliodonium toluene sulfonate, diphenyliodonium chloride, diphenyliodonium bromide, diphenyl iodonium iodide , Diphenyliodonium hexafluorophosphate, 4-methoxyphenyliodonium nitrate, 4-methoxyphenyliodonium trifluoromethylsulfonate, 4,4'-di-t-butyldiphenyliodonium trifluoro (5-trifluoromethylsulfonyl-4-octen-4-yl) iodonium hexafluoroborate, and the like.

Of these, diphenyliodonium-9,10-dimethoxyanthracene-2-sulfonate, which is a compound represented by the following formula (b-2), is preferably used from the viewpoints of high sensitivity and solidification.

(In the formula, Me is a methyl group.)

Further, a compound represented by the following formula (b-3) is also preferable.

The content of the component (b) is preferably from 2 to 50 parts by mass, more preferably from 3 to 40 parts by mass, and still more preferably from 5 to 30 parts by mass, per 100 parts by mass of the component (a).

When the component (b) is in the above range, dissolution inhibition of the component (a) is strongly caused in the unexposed portion, and dissolution inhibiting effect is lost in the exposed portion, so that the dissolution contrast between the unexposed portion and the exposed portion can be increased. It can be suitably used for forming a patterned cured film of a thick film because the dissolution contrast is high. Further, the developing time can be shortened.

(component (c): solvent)

Examples of the component (c) include γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, ethoxyethyl propionate, 3- methylmethoxypropionate, But are not limited to, N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, cyclohexanone, cyclopentanone, Butyl ketone, and methyl amyl ketone. There is no particular limitation so long as it can sufficiently dissolve other components in the photosensitive resin composition.

Of these, from the viewpoint of solubility of each component and excellent applicability at the time of formation of a resin film, it is preferable to use at least one selected from the group consisting of? -Butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N- Dimethylformamide, N, N-dimethylacetamide, and dimethylsulfoxide are preferably used.

The content of the component (c) is not particularly limited, but is preferably 50 to 300 parts by mass, more preferably 100 to 200 parts by mass, per 100 parts by mass of the component (a).

(component (d): crosslinking agent)

The component (d) can be reacted (cross-linked) with the alkali-soluble resin in the step of heat-treating the patterned resin film after application, exposure and development of the resin composition, or the cross-linking agent itself can polymerize. Thus, even when the resin composition is cured at a relatively low temperature, for example, 250 DEG C or less, good mechanical characteristics, chemical resistance, and flux resistance can be imparted.

The component (d) is not particularly limited as long as it is a compound which is crosslinked or polymerized in the step of heat treatment, but is preferably a compound having an alkoxyalkyl group such as a methylol group or an alkoxymethyl group, an epoxy group, an oxetanyl group or a vinyl ether group.

A compound in which these groups are bonded to a benzene ring, and a melamine resin or urea resin in which the N position is substituted with a methylol group or an alkoxymethyl group. Further, a compound in which these groups are bonded to a benzene ring having a phenolic hydroxyl group is more preferable in that the dissolution rate of the exposed portion increases when developing, thereby improving the sensitivity.

Among them, a compound having two or more methylol groups or alkoxymethyl groups is preferable from the viewpoint of being able to prevent melting of the photosensitive resin film at the time of good sensitivity and stability of varnish and curing of the photosensitive resin film after pattern formation Do.

As the component (d), a compound represented by the following formula (5) is preferable in order to obtain a cured film having excellent chemical resistance when the resin composition is cured at a low temperature of 250 캜 or less.

(In the formula (5), R ¹ and R ² are each independently an alkyl group having 1 to 30 carbon atoms.)

As the component (d), it is also preferable to use the following compounds.

The content of the component (d) is preferably from 1 to 50 parts by mass, more preferably from 5 to 40 parts by mass, and still more preferably from 10 to 30 parts by mass, per 100 parts by mass of the component (a).

In the first aspect of the first resin composition of the present invention, it is preferable that the naphthoquinone diazide compound is present in an amount of 0 to 100 ppm based on 100 parts by mass of the component (a). In the first resin composition of the present invention, 0 to 50 ppm is more preferable, and 0 to 10 ppm is more preferable, and a naphthoquinone diazide compound-free (0 ppm) is particularly preferable.

When the naphthoquinone diazide compound is within the above range, the first resin composition of the present invention can maintain good photosensitivity even in a thick film having a thickness of 20 占 퐉 or more after coating.

Examples of the naphthoquinone diazide compound include a reaction product of a polyhydroxy compound and 1,2-naphthoquinonediazide-4-sulfonyl chloride or 1,2-naphthoquinonediazide-5-sulfonyl chloride .

Examples of the polyhydroxy compound include hydroquinone, resorcinol, pyrogallol, bisphenol A, bis (2-hydroxyphenyl) methane, bis (4-hydroxyphenyl) methane, 2-hydroxyphenyl- 2, 4-trihydroxybenzophenone, 2,3,4,4-tetrahydroxybenzophenone, 2,2-bis (4-hydroxyphenyl) hexafluoropropane, 2 ', 4,4'-tetrahydroxybenzophenone, 2,3,4,2', 3'-pentahydroxybenzophenone, 2,3,4,3 ', 4', 5'-hexahydroxy Bis (2,3,4-trihydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) propane, 2- (4-hydroxyphenyl) -2- [4- [ Tetrahydro-l, 3,6,8-tetrahydroxy-5,10-dimethylindeno [2, 1-a] indene, tris (4-hydroxyphenyl) methane, and 1,1,1-tris (4-hydroxyphenyl) ethane. Also, it is not necessarily limited to those exemplified herein.

In the first resin composition of the present invention, the acid-labile protecting group-containing compound is preferably 0 to 1000 ppm based on 100 parts by mass of the component (a). In the first resin composition of the present invention, the content is more preferably 0 to 100 ppm, still more preferably 0 to 10 ppm, and particularly preferably 0 ppm that does not include the acid-reactive protecting group-containing compound.

With this range, a thick film pattern can be formed at a lower cost than a chemically amplified positive photosensitive resin composition requiring a PEB (Post Exposure Bake) process.

Examples of the acid-labile protecting group-containing compound include a compound in which a hydrogen atom of a carboxylic acid is substituted with a 1-alkoxyalkyl group or the like. As the carboxylic acid, there may be mentioned phthalic acid, isophthalic acid, terephthalic acid, 4-carboxyphthalic acid, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, Dicarboxylic acid, 4,4'-dicarboxydiphenyl ether, 2,6-naphthalene dicarboxylic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane , 4,4'-dicarboxybiphenyl, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2- Acid, and lithocholic acid. Examples of the 1-alkoxyalkyl group include a tertiary alkyl group such as a t-butyl group and a t-amyl group, an isobornyl group, an ethoxymethyl group, a 1-ethoxyethyl group, a 1-butoxyethyl group, .

The first resin composition of the present invention may contain a coupling agent, a dissolution accelerator, a dissolution inhibitor, a surfactant, a leveling agent and the like, if necessary.

In the first photosensitive resin composition of the present invention, the components (a) to (d) are preferably 91 mass% or more, more preferably 92 mass% or more, and 93 mass% or more More preferable.

[Second positive-working photosensitive resin composition]

A second positive-working photosensitive resin composition of the present invention comprises (a) an alkali-soluble resin, (b) an onium salt which generates an acid by i-line exposure, and (c) 0 to 100 ppm of a naphthoquinone diazide compound or an acid-reactive protecting group-containing compound is contained.

(a) to (c) are the same as the first positive photosensitive resin composition. The second positive-working photosensitive resin composition may or may not contain (d) a crosslinking agent. The component (d) is the same as the first positive photosensitive resin composition.

In the second resin composition, the content of the naphthoquinone diazide compound is 0 to 100 ppm based on 100 parts by mass of the component (a). It is more preferably 0 to 50 ppm, more preferably 0 to 10 ppm, and even more preferably 0 ppm (naphthoquinone diazide compound-free).

When the naphthoquinone diazide compound is within the above range, the second resin composition can maintain good photosensitivity even if it is a thick film having a thickness of 20 mu m or more after coating.

In the second resin composition, the content of the acid-reactive protective group-containing compound is 0 to 100 ppm based on 100 parts by mass of the component (a). It is more preferably 0 to 50 ppm, more preferably 0 to 10 ppm, and even more preferably 0 ppm that does not contain an acid-reactive protecting group-containing compound.

With this range, it is possible to form a thick patterned cured film at a low cost as compared with a chemically amplified positive photosensitive resin composition requiring a PEB (Post Exposure Bake) process.

In the second photosensitive resin composition, the components (a) to (c) are preferably 91 mass% or more, more preferably 92 mass% or more, further preferably 93 mass% Particularly preferably 95% by mass or more, particularly preferably 96% by mass or more, most preferably 97% by mass or more, most preferably 98% by mass or more.

The second positive-working photosensitive resin composition of the present invention is the same as the first positive-working photosensitive resin composition except for those described above.

[Method of producing pattern-hardened film]

In the production method of the present invention, the above-mentioned resin composition is coated on a substrate and dried to form a photosensitive resin film, a step of exposing the obtained photosensitive resin film to a predetermined pattern, a step of exposing the exposed resin film to an alkali aqueous solution A patterned resin film is obtained, and a step of heat-treating the patterned resin film, whereby a patterned cured film can be produced.

(Resin film forming step)

Examples of the substrate include glass, semiconductor, metal oxide insulators such as TiO ₂ and SiO ₂ , silicon nitride, copper, and copper alloy.

The application is not particularly limited, but can be carried out using a spinner or the like.

Drying can be carried out using a hot plate, an oven or the like. The heating temperature is preferably 100 to 150 占 폚. The heating time is preferably 30 seconds to 5 minutes. Thereby, a resin film in which the above-mentioned resin composition is formed in a film form can be obtained.

The film thickness of the resin film is preferably 5 to 100 占 퐉, more preferably 8 to 50 占 퐉, and further preferably 10 to 40 占 퐉.

(Exposure step)

In the exposure step, exposure can be performed in a predetermined pattern through a mask. The active rays to be irradiated may include ultraviolet rays including i-rays, visible rays, radiation, and the like, but i-rays are preferred. As the exposure apparatus, a parallel exposure apparatus, a projection exposure apparatus, a stepper, a scanner exposure apparatus, or the like can be used.

(Developing step)

By performing development processing, a patterned resin film (patterned resin film) can be obtained. Generally, when a positive photosensitive resin composition is used, the exposed portion is removed with a developer.

Examples of the alkali aqueous solution used as the developer include sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide and the like, and tetramethylammonium hydroxide is preferable .

The concentration of the alkali aqueous solution is preferably from 0.1 to 10% by mass.

The developing time is preferably 10 seconds to 15 minutes, more preferably 10 seconds to 5 minutes, and more preferably 30 seconds to 4 minutes from the viewpoint of productivity, depending on the kind of polymer used .

Alcohols or surfactants may be added to the developer. The addition amount is preferably from 0.01 to 10 parts by mass, more preferably from 0.1 to 5 parts by mass, per 100 parts by mass of the developer.

(Heat treatment step)

The patterned resin film is subjected to heat treatment to form a crosslinked structure between the functional groups of the component (a) or between the components (a) and (d) to obtain a patterned cured film. When the component (a) comprises a polyimide precursor or a polybenzoxazole precursor, each precursor can undergo a dehydration ring-closure reaction to form the corresponding polymer.

The heating temperature is preferably 250 占 폚 or lower, more preferably 120 占 폚 to 250 占 폚, and even more preferably 160 占 폚 to 230 占 폚.

Within the above range, the damage to the substrate or the device can be suppressed to a small extent, the device can be produced with high yield, and the energy saving of the process can be realized.

The heating time is preferably 5 hours or less, more preferably 30 minutes to 3 hours.

Within the above range, the crosslinking reaction or dehydration ring-closure reaction can be sufficiently proceeded.

The atmosphere for the heat treatment may be either in the air or in an inert atmosphere such as nitrogen, but is preferably in a nitrogen atmosphere in order to prevent oxidation of the patterned resin film.

Examples of the apparatus used in the heat treatment process include a quartz tube furnace, a hot plate, a rapid thermal anneal, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace A furnace, and a microwave curing furnace.

Further, a microwave curing apparatus or a frequency variable microwave curing apparatus may be used for the heat treatment.

By using these, only the patterned resin film can be heated effectively (for example, see Japanese Patent No. 2587148) while the temperature of the substrate or the device is maintained at, for example, 220 캜 or lower. In the case of curing using a microwave, standing wave can be prevented by irradiating the microwave in a pulse shape while changing the frequency, and the substrate surface can be uniformly heated.

In the case where a metal wiring such as an electronic part is included as a substrate, if a microwave is irradiated in a pulse shape while changing a frequency, generation of discharge from the metal can be prevented and the electronic part can be protected from breakage.

When the microwave is irradiated in the form of a pulse, the set heating temperature can be maintained, and damage to the pattern resin film and the substrate can be prevented.

[Cured goods]

The cured product of the present invention is a cured product of the positive photosensitive resin composition of the present invention. As the method of obtaining the cured product, the above-mentioned heat treatment step can be employed.

The cured product of the present invention may be the patterned cured film described above.

[Electronic parts]

The patterned cured film and the cured product produced by the above method can be used as an interlayer insulating film, a cover coat layer, or a surface protective film.

Electronic devices such as semiconductor devices, multilayer wiring boards, and various electronic devices can be manufactured with high reliability by using the interlayer insulating film, the cover coat layer, and the surface protective film.

[Manufacturing Process of Semiconductor Device]

By using the method of the present invention, it is possible to manufacture a semiconductor device, particularly a device having a package structure without a UBM layer.

In the package structure without the UBM layer, the solder bumps are directly mounted on the re-wiring lines of copper, and the resin composition of the outermost layer reinforces the bumps in order to relieve the stress applied to the bumps and ensure reliability have.

The manufacturing process is shown in Fig. The photosensitive resin composition is coated on a substrate 10 having a rewiring layer 20 and dried to form a resin film (1-1), and the obtained resin film 30 is exposed in a predetermined pattern. The resin film after exposure is developed using a developing solution (1-2), the pattern resin film obtained by the development is subjected to heat treatment, and then the conductive balls or the conductive bumps 40 are mounted (1-3) It is possible to manufacture a package which is not provided with.

In the above package, it is preferable that the thickness of the patterned cured film is made thicker than the conventional film thickness (10 탆 or less) in order to ensure reliability by reinforcing the bump on the outermost pattern resin film.

2 is a schematic cross-sectional view of a semiconductor device having a rewiring structure without a UBM layer. In the semiconductor device 100 of FIG. 2, a metal (aluminum or the like) wiring 120 is provided on the wafer 110 and an insulating layer 130 (not shown) is formed so as to cover both ends of the wafer 110 and the metal wiring 120 ). An interlayer insulating film 140 is provided on the insulating layer 130 so as to cover a part of the insulating layer 130 and the metal wiring 120. All of the remaining exposed portions of the metal wiring 120 and the interlayer insulating film 140 The re-wiring layer 150 is laminated. The cover layer 160 is formed on the redistribution layer 150 so as to cover the voids formed by the redistribution layer 150 and the conductive balls 170. In this case, .

By using the resin composition of the present invention and forming a thick coat of the cover coat layer 160, a semiconductor device can be manufactured without installing a UBM layer in a complicated forming process.

The semiconductor device is an embodiment of the electronic component of the present invention, but the present invention is not limited to the above, and various structures can be employed.

Example

Hereinafter, the present invention will be described more specifically based on examples and comparative examples. The present invention is not limited to the following examples.

[Synthesis of polybenzoxazole precursor]

Synthesis Example 1

60 g of N-methylpyrrolidone was charged into a 0.2 liter flask equipped with a stirrer and a thermometer, 13.92 g (38 mmol) of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane was added And dissolved by stirring. Then, 10.69 g (40 mmol) of dodecane dihydrochloride was added dropwise for 10 minutes while maintaining the temperature at 0 to 5 ° C, and then the solution in the flask was stirred for 60 minutes. The solution was poured into 3 liters of water to recover the precipitate. The precipitate was washed three times with pure water and then reduced in pressure to obtain a polyhydroxyamide (polybenzoxazole precursor) do). The polymer I had a weight average molecular weight of 33,100 and a polydispersity of 2.0 as determined by gel permeation chromatography (GPC) standard polystyrene conversion.

The measurement conditions of the weight average molecular weight by the GPC method are as follows. The measurement was conducted using 0.5 ml of the polymer solution in which 1 ml of a solvent (tetrahydrofuran (THF) / dimethylformamide (DMF) = 1/1 (volume ratio)) was used.

Measuring device: Detector L4000 UV by Hitachi Seisakusho Co., Ltd.

Pump: Hitachi Seisakusho L6000

C-R4A Chromatopac &lt; RTI ID = 0.0 &gt;

Measurement conditions: Column Gelpack GL-S300MDT-5 × 2

Eluent: THF / DMF = 1/1 (volume ratio)

LiBr (0.03mol / l), H 3 PO 4 (0.06mol / l)

Flow rate: 1.0 ml / min, detector: UV270 nm

Synthesis Example 2

60 g of N-methylpyrrolidone was charged into a 0.2 liter flask equipped with a stirrer and a thermometer, 13.92 g (38 mmol) of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane was added And dissolved by stirring. Then, 11.86 g (40 mmol) of 4,4'-diphenyl ether dicarboxylic acid dichloride was added dropwise over 10 minutes while maintaining the temperature at 0 to 5 ° C, and the solution was returned to room temperature and the solution in the flask was stirred for 3 hours. The solution was poured into 3 liters of water, and the precipitate was recovered. The precipitate was washed with pure water three times and then reduced in pressure to obtain a polyhydroxyamide (hereinafter referred to as Polymer II). The polymer II had a weight average molecular weight of 22,400 and a polydispersity of 3.2 as determined by GPC standard standard polystyrene conversion as in Synthesis Example 1.

Synthesis Example 3

Except that 10.69 g (40 mmol) of dodecane diacid chloride used in Synthesis Example 1 was substituted with 7.48 g (28 mmol) of dodecane dihydrochloride and 3.56 g (12 mmol) of 4,4'-diphenyletherdicarboxylic acid dichloride , And the synthesis was carried out in the same manner as in Synthesis Example 1 to obtain a polyhydroxyamide (hereinafter referred to as Polymer III). The polymer III had a weight average molecular weight of 41,800 and a polydispersity of 2.0 as determined by standard polystyrene conversion in the same manner as in Synthesis Example 1. [

[Synthesis of polyimide precursor]

Synthesis Example 4

In a 0.2 liter flask equipped with a stirrer and a thermometer, 50 g of N-methylpyrrolidone was charged, and 13.82 g (18 mmol) of 4,4'-diamino-2,2'-dimethylbiphenyl was added, did. Then, while maintaining the temperature at 0 to 5 占 폚, 6.20 g (20 mmol) of 4,4'-oxydiphthalic dianhydride was dropped for 10 minutes, and then the temperature was returned to room temperature and the solution in the flask was stirred for 3 hours. The solution was poured into 3 liters of water, and the precipitate was recovered. The precipitate was washed three times with pure water, and then reduced in pressure to obtain a polyamic acid (hereinafter referred to as polymer IV). The polymer IV had a weight average molecular weight of 39,000 and a dispersion degree of 4.5 as determined by GPC standard standard polystyrene conversion as in Synthesis Example 1.

[Synthesis of component (b)] [

Synthesis Example 5

In a 0.5-liter flask equipped with a stirrer and a thermometer, 150 mL of ion-exchanged water was charged, 4.3 g (14 mmol) of diphenyliodonium chloride was added, and the mixture was stirred and dissolved while heating at 100 캜. Further, 300 mL of ion-exchanged water was charged into a 1.0 liter flask equipped with a stirrer and a thermometer separately, and 4.7 g (14 mmol) of sodium 9,10-dimethoxy anthracenesulfonate was added. While heating at 100 DEG C, did. Subsequently, an aqueous solution of diphenyliodonium chloride was poured into an aqueous solution of sodium 9,10-dimethoxyanthracenesulfonate and stirred for 3 hours until the temperature was returned to room temperature. The precipitate was recovered, washed with pure water three times, and then dried under reduced pressure to obtain diphenyliodonium-9,10-dimethoxyanthracene-2-sulfonate (b1).

Synthesis Example 6

300 mL of ion-exchanged water was charged into a 0.5-liter flask equipped with a stirrer and a thermometer, 10.0 g (32 mmol) of diphenyliodonium chloride was added, and the mixture was stirred and dissolved while being heated at 100 캜. Further, 300 mL of ion-exchanged water was charged into a 1.0 liter flask equipped with a stirrer and a thermometer separately, 10.0 g (32 mmol) of 8-anilino-1-naphthalenesulfonate was added, Dissolved. Subsequently, an aqueous solution of diphenyl iodonium chloride was poured into an aqueous 8-anilino-1-naphthalenesulfonic acid aqueous solution and stirred for 3 hours until the temperature was returned to room temperature. The precipitate was recovered, washed with pure water three times, and then dried under reduced pressure to obtain diphenyliodonium-8-anilinonaphthalene-1-sulfonate (b2).

[Synthesis of acid-labile protecting group-containing compound]

Synthesis Example 7

4.54 g (17.6 mmol) of 4,4'-dicarboxylic diphenyl ether was placed in a 100-mL three-necked flask, and suspended in 30 g of N-methylpyrrolidone. 3.74 g (39.6 mmol) of chloromethyl ethyl ether was added while cooling with ice (ice cooling), and then 3.55 g (35.1 mmol) of triethylamine was added. After stirring for 3 hours in an ice bath (ice bath), the precipitated crystals were removed by filtration. To the mother liquor was added a small amount of a saturated aqueous solution of sodium hydrogencarbonate to stop the reaction. The organic layer extracted with ethyl acetate was washed with saturated aqueous sodium hydrogencarbonate solution, water and saturated brine in that order, and dried over anhydrous sodium sulfate. After the anhydrous sodium sulfate was filtered off, the solvent was distilled off under reduced pressure and dried to obtain an acid-labile protecting group-containing compound (e1).

[Example of first positive photosensitive resin composition]

Examples 1 to 19 and Comparative Examples 1 to 13

The photosensitive resin compositions of Examples 1 to 19 and Comparative Examples 1 to 13 were prepared with the components and blending amounts shown in Tables 1 to 4. The blending amounts of Tables 1 to 4 are the parts by mass of the components (b) to (d), (b'-1) and (e1) relative to 100 parts by mass of each polymer as the component (a).

The components used are as follows.

(a) Component:

Polymer I: Polymer I obtained in Synthesis Example 1

Polymer II: Polymer II obtained in Synthesis Example 2

Polymer III: Polymer III obtained in Synthesis Example 3

Polymer IV: Polymer IV obtained in Synthesis Example 4

Polymer V: Cresol novolak EP4020G (manufactured by Asahi Yuki Kai Kogyo Co., Ltd.)

(b) Component:

(b1): The diphenyliodonium-9,10-dimethoxyanthracene-2-sulfonate obtained in Synthesis Example 5

(b2): The diphenyliodonium-8-anilino naphthalene-1-sulfonate obtained in Synthesis Example 6

(c) Component:

BLO:? -Butyrolactone

NMP: N-methylpyrrolidone

EL: Ethyl lactate

(d) Component:

D1: 1,3,4,6-tetrakis (methoxymethyl) glycouril (trade name "MX-270 ", manufactured by Sanwa Chemical Co.,

D2: "Nicarax MX-280" (trade name, available from Sanwa Chemical Co., Ltd.) having the following structure:

The compounds other than the components (a) to (d) are as follows.

(b'-1): Synthesis of 2- (4-hydroxyphenyl) -2- [4- [1,1-bis (4- hydroxyphenyl) ethyl] phenyl] propane and naphthoquinone- 5-sulfonyl chloride in a molar ratio of 1: 3

e1: The acid-labile protecting group-containing compound

[Evaluation of dissolution rate and dissolution contrast]

Each of the photosensitive resin compositions of Examples 1 to 19 and Comparative Examples 1 to 13 was spin-coated on a silicon substrate and dried at 120 占 폚 for 3 minutes to form a resin film having a thickness of 10 or 25 占 퐉 after drying. Exposure was performed on the obtained resin film using an ultra-high pressure mercury lamp and Proximity Exposure Apparatus UX-1000SM-XJ01 (manufactured by Ushio Denshi K.K.) via an interference filter, and an i-line of 400 mJ / cm ² was irradiated with a predetermined pattern .

After the exposure, development (each development time required for each example is defined as each development time) is performed at 23 deg. C with a 2.38 mass% aqueous solution of TMAH until the exposed silicon substrate is exposed, and then rinsed with water to form a patterned resin film .

The value obtained by dividing the film thickness after drying by the developing time was regarded as the dissolution rate of the exposed part.

Dissolution rate of exposure part (nm / s) = film thickness after drying / development time

Further, the unexposed portion dissolution rate was obtained by dividing the film thickness after development by the film thickness, and subtracting the film thickness after drying from the thickness of the unexposed portion after development by the developing time.

(Nm / s) = (film thickness after drying-unexposed film thickness after development) / developing time

The dissolution contrast was obtained by dividing the dissolution rate of the exposed portion by the dissolution rate of the unexposed portion.

Dissolution contrast = Dissolution rate of exposed part / Dissolution rate of unexposed part

The results are shown in Tables 1 to 4.

Each of the patterned resin films was subjected to heat treatment at 200 ° C for 1 hour, whereby a good patterned cured film was obtained.

Examples 20 to 28 and Comparative Examples 14 to 15

The photosensitive resin compositions of Examples 20 to 28 and Comparative Examples 14 to 15 were prepared with the components and blending amounts shown in Table 5. The compounding amounts in Table 5 are the same as in Tables 1 to 4.

[Evaluation of pattern formation property]

The layer thickness is 10~30㎛ after drying, and was formed of 800mJ / cm ^2, and that the development time equal to the one other than the embodiments 1-19 and the comparative examples 1 to 13 to 150 seconds pattern resin film to light exposure.

In the patterned resin film, a line-and-space pattern having a line width of 20 mu m was observed under a microscope and a digital microscope VHX-100F (manufactured by KEYENCE INC.) To confirm the presence or absence of scum. A was used when patterning was not possible without scum, and B when scum was used. The results are shown in Table 5.

Each of the patterned resin films was subjected to heat treatment at 200 ° C for 1 hour, whereby a good patterned cured film was obtained.

[Example of the second positive photosensitive resin composition]

Examples 29 to 44 and Comparative Examples 16 to 28

The photosensitive resin compositions of Examples 29 to 44 and Comparative Examples 16 to 28 were prepared with the components and blending amounts shown in Tables 6 to 8. The blending amounts in Tables 6 to 8 are the parts by mass of the components (b) to (d) and (b ') relative to 100 parts by mass of each polymer as the component (a).

(b ') are as follows.

(b'1): The acid-labile protecting group-containing compound (e1 in Examples 1 to 28 and Comparative Examples 1 to 15) obtained in Synthesis Example 7,

(b'2): A compound represented by the following structural formula (TPPA528 (trade name) manufactured by Daitomemics, Inc., naphthoquinone diazide compound)

[Evaluation of dissolution rate and dissolution contrast]

The dissolution rate and dissolution contrast were evaluated in the same manner as in Examples 1 to 19 and Comparative Examples 1 to 13. In Examples 29 to 44 and Comparative Examples 16 to 28, the following evaluation criteria were used.

A when the dissolution rate of the exposure part was 150 nm / s or more, B when the exposure speed was 50 or more and 150 nm / s or more, and C when the dissolution rate was 50 nm / s or more.

A when the dissolution rate at the unexposed portion was 30 nm / s or less, B at 30 to 100 nm / s, and C at 100 nm / s or faster.

A case where the dissolution contrast is 6 or more is A, a case where it is 4 or more and less than 6 is B, a case where it is 2 or more but less than 4 is C,

The results are shown in Tables 6 and 7.

Each of the patterned resin films was subjected to heat treatment at 200 ° C for 1 hour, whereby a good patterned cured film was obtained.

Examples 45 to 49 and Comparative Examples 29 and 30

The photosensitive resin compositions of Examples 45 to 49 and Comparative Examples 29 and 30 were prepared by the ingredients and blending amounts shown in Table 8 below.

[Evaluation of pattern formation property]

The pattern formability was evaluated in the same manner as in Examples 20 to 28 and Comparative Examples 14 and 15. The results are shown in Table 8.

Each of the patterned resin films was subjected to heat treatment at 200 ° C for 1 hour, whereby a good patterned cured film was obtained.

Industrial availability

The photosensitive resin composition of the present invention can be used in electronic devices such as semiconductor devices, multilayer wiring boards, and various electronic devices.

Although the embodiments and / or examples of the present invention have been described in some detail above, those skilled in the art will recognize that many changes may be made in these exemplary embodiments and / or examples without departing substantially from the novel teachings and advantages of the present invention It is easy to apply. Accordingly, many of these modifications are within the scope of the present invention.

The disclosure of which is hereby incorporated herein by reference in its entirety.

Claims (14)

A positive photosensitive resin composition comprising (a) an alkali-soluble resin, (b) an onium salt generating an acid by i-line exposure, (c) a solvent, and (d) a crosslinking agent, Wherein the total of the components (a), (b) and (d) is 88 mass% or more based on the total mass of the photosensitive resin composition. A positive photosensitive resin composition comprising (a) an alkali-soluble resin, (b) an onium salt which generates an acid by i-line exposure, and (c) a solvent, wherein, relative to 100 parts by mass of the component (a) A diazide compound or an acid-reactive protecting group-containing compound in an amount of 0 to 100 ppm. The method of claim 2,
(d) a crosslinking agent. 4. The method according to any one of claims 1 to 3,
Wherein the component (a) contains a polyimide, a polyimide precursor, a polybenzoxazole, a polybenzoxazole precursor, a novolac resin, or a polyhydroxystyrene. 5. The method according to any one of claims 1 to 4,
It is preferable that the component (b) is a compound which inhibits the dissolution of the component (a) in an aqueous alkali solution before i-line exposure and does not inhibit dissolution of the component (a) in an aqueous alkali solution after i- Type photosensitive resin composition. 6. The method according to any one of claims 1 to 5,
Wherein the component (b) is a compound represented by the following general formula (b-1).

(Wherein X is a counterion, and the aromatic ring may have a substituent.) 7. The method according to any one of claims 1 to 6,
Wherein the component (b) is a compound represented by the following formula (b-2).

(In the formula, Me is a methyl group.) The method according to any one of claims 1 to 7,
A positive photosensitive resin composition used for forming an interlayer insulating film, a cover coat layer or a surface protective film. The method according to any one of claims 1 to 7,
A positive photosensitive resin composition used for forming an interlayer insulating film, a cover coat layer or a surface protective film of a semiconductor device having a UBM free structure. A process for producing a positive photosensitive resin composition, comprising the steps of: applying the positive photosensitive resin composition according to any one of claims 1 to 9 on a substrate and drying the resultant to form a photosensitive resin film;
Exposing the obtained photosensitive resin film to a predetermined pattern,
A step of developing the exposed resin film using an aqueous alkaline solution to obtain a patterned resin film,
A step of heat-treating the patterned resin film
Wherein the patterned cured film is formed by a method comprising the steps of: The method of claim 10,
Wherein the temperature of the heat treatment is 250 占 폚 or less. A cured product of the positive photosensitive resin composition according to any one of claims 1 to 9. An interlayer insulating film, cover coat layer or surface protective film using the cured product according to claim 12. An electronic part having the interlayer insulating film, cover coat layer or surface protective film according to claim 13.

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