KR20170063095A - Apparatus for cleaning part of deposition device - Google Patents

Abstract

A method for removing contaminants from a metal or metal reaction product formed on a component having a concavo-convex surface of a metal deposition process apparatus so as to effectively and easily remove contaminants on a component having a concavo- A cleaning device comprising: a laser irradiating part for irradiating a laser having an ultrashort pulse locally below a picosecond on a concavo-convex surface of a contaminated component; and a laser irradiating part for irradiating the irradiated area of the laser irradiated by the laser irradiating part along the surface of the part And a reflecting mirror for reflecting the laser beam irradiated from the laser irradiating section to the surface of the concavo-convex component, and applying a peak energy of the first pulse to the surface of the component through the laser irradiated from the laser irradiating section to clean the contaminant The present invention also provides a cleaning device for a concave-convex part of a wafer.

Description

[0001] APPARATUS FOR CLEANING PART OF DEPOSITION DEVICE [0002]

The present invention relates to a cleaning apparatus for removing contaminants adhered to a process equipment using a laser, and more particularly, to a cleaning apparatus for easily cleaning a component having a surface having a concave-convex shape.

For example, in the semiconductor and display processes, various types of metal deposition are performed using CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) for functional stacking. The principle of the deposition process is to form a metal reaction product, such as metal, metal oxide, or nitride, on the surface of a substrate (metal, ceramic) to function by reacting a metal vapor with a gas as a coating layer.

However, the metal reaction product is deposited on the substrate, and at the same time, all the peripheral parts of the reactor involved in the reaction process also have surface coating due to the metal reaction product. Types of components in the reactor include chambers, shutters, liquid injectors, gas injectors, showerheads, vacuum jigs, viewpoints (windows), and other fixtures. They are mainly made of metal, ceramic or glass. A metal reaction product is formed in the form of a coating layer on the surface of such a component through a repetitive process, and the contamination coating layer on the surface of the component thus formed becomes thicker as the process is repeated. Therefore, it is necessary to periodically remove the contamination coating layer because it may act as a shield or may act as an impurity on a substrate to be partially peeled off.

In the conventional case, the operator manually removed the contaminated coating layer deposited on the equipment. Therefore, there is a problem that work is troublesome and uncomfortable. In order to reactivate the deposition process after the removal operation, the interior preparation work must be newly started, so that the process efficiency is lowered and the mass productivity of the product is lowered.

Particularly, in the case of a component having a concave and convex shape formed with embossed and engraved surfaces, it is difficult to clean the entire surface evenly, which is difficult and time consuming.

Provided is a cleaning device for a concavo-convex part which can more effectively remove contaminants attached to parts of a metal deposition equipment by using a laser.

The present invention also provides a cleaning device for a concavo-convex part that can effectively and easily remove contaminants even for a component having a surface having a concavo-convex shape.

The cleaning apparatus of this embodiment is an irregular part cleaning apparatus for removing contaminants including a metal or a metal reaction product formed on a component having a concavo-convex surface of a metal deposition processing apparatus, A laser irradiating unit for irradiating a laser having a laser pulse having a pulse length of less than or equal to 10 seconds and a peak pulse energy of a short pulse to the surface of the component to clean the contaminated material; And a reflecting mirror for reflecting the laser beam irradiated from the laser irradiating unit to the surface of the concavo-convex part.

The moving part may include a table on which the component is placed, a rotating part for rotating the table, an upper support part disposed above the table and provided with the laser irradiation part, and a lift part for moving the upper support part up and down with respect to the table have.

The reflector may be a structure in which the reflecting surface is concave inward.

The reflecting mirror may have a structure in which the reflecting surface is convex to the outside.

The cleaning apparatus may further include an adjusting unit adjusting the focal position of the laser beam irradiated from the laser irradiating unit according to the irregular surface of the component.

The adjusting unit may include a focal distance changing unit for changing a focal distance by separating the gap between the laser irradiating unit and the reflecting mirror and an angle adjusting unit for changing the angle of reflection of the laser beam irradiated from the laser irradiating unit by adjusting the angle of the reflecting mirror. .

The focal distance moving unit may include a guide bar that is vertically movable on an upper support to which a laser irradiation unit is installed, a reflector is installed at a tip thereof, and a vertical driver for moving the guide bar up and down.

Wherein the angle adjusting portion includes a ring member fitted to the guide bar and slidably installed along the guide bar, and a vertical driving portion installed on the guide bar and connected to the ring member to move the ring member up and down, And may be hinged to the tip end of the guide bar so as to be rotatable via a link member.

The laser irradiating unit generates a laser having a short pulse of less than a picosecond by reducing the pulse width by mode-locking and Q-switching a solid laser, a liquid laser, a gas laser or a semiconductor laser Lt; / RTI >

The laser may be of a structure having a femto second or atochose pulse.

The material may be a metal, ceramic, glass, or polymer material.

The peak energy of the laser may be 0.1 to 125 μJ.

The laser irradiation angle for the material may be 30 to 90 degrees.

The wavelength of the laser may be between 300 nm and 1064 nm.

As described above, according to this embodiment, contaminants can be easily and easily cleaned even for a component having a relief or depressed surface formed on the surface.

In addition, it is possible to more effectively remove contaminants by applying thermal stress to the contaminants while preventing the thermal deformation of the components by irradiating the ultra-short pulse laser of picosecond or less.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic view showing the configuration of a cleaning apparatus for cleaning irregular-shaped parts according to the present embodiment. FIG.
2 is a schematic view showing still another embodiment of the reflector of the cleaning apparatus according to the present embodiment.
3 is a schematic view for explaining the operation of the cleaning apparatus according to the present embodiment.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms as used herein include plural forms as long as the phrases do not expressly express the opposite meaning thereto. Means that a particular feature, region, integer, step, operation, element and / or component is specified, and that other specific features, regions, integers, steps, operations, elements, components, and / And the like.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the following description, the present embodiment is an apparatus for removing contaminants, which is used for a deposition apparatus of a semiconductor or a display process, and has a depressed portion or a relief portion formed on the surface thereof. Of course, the present invention is applicable to various components of various process equipment to which contaminants are attached in addition to the components of the deposition equipment.

Deposition equipment is a device used to deposit thin films by depositing organic materials on a substrate or the like. Thin film deposition is performed on the substrate in a process chamber. During this process, many organic materials are deposited on the surface of the components that make up the equipment. The component can be made of, for example, metal, ceramic, glass, or a polymer material. Materials such as stainless steel, aluminum, and titanium may be used as the metal, and materials such as alumina and zirconia may be used as the ceramic. The surface roughness of these parts reaches from several nm to several tens of micrometers, and metal and metal reaction products are adhered to the surface of the component by the deposition process.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic view showing the configuration of a cleaning apparatus for cleaning irregular-shaped parts according to the present embodiment. FIG.

As shown in FIG. 1, the cleaning apparatus of the present embodiment is a rough-surface component cleaning apparatus for removing contaminants containing a metal or metal reaction product formed on a component having a concavo-convex surface of a metal vapor deposition process apparatus.

To this end, the cleaning apparatus comprises a laser irradiation unit 10 for irradiating a laser having a first-stage pulse locally less than or equal to picosecond to the irregular surface of the contaminant-impregnated component 100, A moving section for moving the irradiated region of the laser along the surface of the component, and a reflecting mirror 20 for reflecting the laser irradiated by the laser irradiating section 10 to the surface of the irregular component.

The laser beam irradiated from the laser irradiation unit 10 applies the peak energy of the first pulse to the surface of the component to clean the contaminants.

The part 100 to be cleaned has a concavo-convex shape. The concave-convex shape means a concave or convex convex portion formed on the surface by embossing or engraving. As shown in Fig. 1, in the case of the cylindrical component 100 in which the concavo-convex curvature is formed on the inner circumferential surface, it is difficult to irradiate the laser with the curved surface of the inner circumferential surface,

The cleaning apparatus of this embodiment can precisely irradiate the laser irradiated from the laser irradiation unit 10 onto the surface of the irregular-shaped part using the reflector 20 to perform cleaning.

The laser irradiating unit 10 is a device for outputting a pulsed laser, and the laser irradiated therefrom can have a pulse of less than a picosecond, that is, a short pulse such as picosecond, femtosecond, or atochord.

Thus, this embodiment directly irradiates the surface of the component with a laser having a focused energy of less than a picosecond such as picosecond, femtosecond, or atoso to remove contaminants attached to the component surface.

The laser irradiating unit 10 may mode-lock and Q-switch various kinds of pulsed lasers, for example, solid lasers, liquid lasers, gas lasers or semiconductor lasers to reduce the pulse width and output So as to generate a laser having an ultra-short pulse of not more than a picofarameter.

Pulsed lasers, such as solid-state lasers, liquid lasers, gas lasers, semiconductor lasers, etc., are optically pumped from a pulse energy of several W to several kW through energy pumping using Q-switching, Lt; RTI ID = 0.0 > picosecond < / RTI > with a desired frequency.

In this embodiment, the peak energy of the laser generated from the laser irradiation unit 10 and irradiated to the surface of the component may be 0.1 to 125 μJ. The peak energy can be obtained, for example, using a laser having a frequency of 0.1 MHz to 2 MHz and an energy of 1 to 50 W. [

Since the strain energy of most materials is 0.1 to 2 mu J, the peak energy of the laser incident on the component surface in this embodiment exceeds the critical energy for removing most organic and inorganic substances. When the laser peak energy of this embodiment is lower than the above range, the cleaning effect on the contaminants attached to the surface of the component is deteriorated, and if it exceeds the above range, the component itself may be damaged.

The laser having the sub-picosecond pulse generated from the laser irradiating unit 10 can be applied to an organic material or an inorganic substance to be removed by entering into a contaminant such as an organic substance or an inorganic substance attached to the surface of the component at a high energy in a very short period of time. To the surface of the substrate. Thus, contaminants adhering to the surface of the component are removed as the local site is thermally deformed and broken by the laser irradiated from the laser irradiation unit 10.

A microwave laser with a discontinuous pulse generated by the laser irradiation unit 10 or below does not transmit heat to the surface of the component. Particles with microwave pulses and focused energy of the laser transmit energy to localized sites, which do not generate heat on the surface and do not cause component deformation. Due to this principle, it is possible to remove only contaminants without deformation of parts.

The wavelength of the laser used in this embodiment can be widely used for IR, visible light, ultraviolet wavelength, and the like. In other words, it can be used as a pulsed laser for an ultraviolet region having a wavelength of 1064 nm or more and a wavelength of 300 nm. The wavelength region is correlated with the energy absorption coefficient of the material. However, in this embodiment, the microwave laser pulse having a picosecond or less irrespective of the wavelength is used for cleaning through the high incident energy and the microwave pulse retention time. Therefore, in this embodiment, all of the lasers having a wavelength in the ultraviolet region and a laser beam in the infrared region can be used as long as the wavelength range. For example, in this embodiment, a 1064 nm Nd: YVO4 laser can be used and the wavelength can be changed to 536 nm or 354 nm by using a harmonic coupling technique.

Further, the laser irradiation unit 10 can increase the irradiation angle of the laser with respect to the component surface. In the present embodiment, the laser irradiating unit 10 can irradiate the laser directly irradiated on the component surface at an angle of 30 to 90 degrees with respect to the component surface. When the laser irradiation angle exceeds 30 degrees, the laser energy applied to the component surface becomes large. In this embodiment, however, even if the laser irradiation angle with respect to the component surface becomes large as the laser having the pulse of picosecond or less is irradiated, It is possible to remove only contaminants attached to the surface of the component without transmitting heat.

As described above, by irradiating the surface of the component with a laser beam at an angle exceeding 30 degrees at a right angle, the energy of the laser can be completely transferred to the contaminant, thereby improving the contaminant removal efficiency and preventing the component surface from being damaged.

Further, as the irradiation angle of the laser with respect to the component surface is lowered to 30 degrees or less, the energy applied to the component surface is not uniform throughout the irradiation surface, and energy unbalance occurs. In this embodiment, the irradiation angle of the laser is 30 degrees or more so that energy can be uniformly applied to the contaminants attached to the surface of the component.

In the sub-picosecond pulsed laser directly incident on the material, there is no increase in thermal energy and melt deformation due to energy transfer between the atom and the atom, between the electron and the ion, and between the ions after local energy enters the surface due to microwave energy. Therefore, even if the laser is irradiated at right angles to the surface of the component as described above, there is no heat transfer after generation of local thermal stress due to the ultrashort pulse wavelength, so that the component is not deformed or undesirably melted.

In contrast, in the case of a continuous wave (CW laser) having other continuous wavelengths, the time of incidence of the laser energy is about 0.2 microseconds or more, which is comparable to the pulse seconds of the picosecond or less of this embodiment Energy is injected into the material for a long time, which causes thermal deformation or heat damage. Therefore, a continuous wave laser transmits energy to a surface by using energy injection for a long time, thereby transferring heat energy together, thereby causing damage to the component.

As shown in Fig. 1, the laser irradiated by the laser irradiation unit 10 is reflected by the reflecting mirror 20 and irradiated on the inner circumferential surface of the component as a curved surface. The reflector 20 is located directly below the laser irradiation unit 10 and reflects the laser irradiated from the laser irradiation unit 10 to a required position. The installation structure of the reflector will be described later.

In the present embodiment, the reflecting mirror 20 has a concave reflecting surface. Therefore, the reflecting mirror 20 having the concave structure can concentrate the laser beam in one place. The laser irradiated by the laser irradiation unit 10 is reflected by the reflecting mirror 20 having a concave shape to be focused on any one of the component surfaces. The radius of curvature of the reflecting mirror 20 can be variously changed according to the shape and size of the parts.

In addition to the reflector of the above structure, Fig. 2 illustrates the reflector 22 of another embodiment. As shown in FIG. 2, the reflecting surface may have a convex structure. Thus, the reflecting mirror 22 having the block structure can diffuse the laser widely. The laser beam irradiated from the laser irradiation unit 10 is reflected by the reflecting mirror 22 in a convex form and spreads widely on the surface of the component. Therefore, it is possible to remove the contaminants by uniformly irradiating the entire portion of the surface of the component, for example, the protruded relief portion to the outside.

In addition to the structure described above, the reflector may be, for example, a planar shape. The planar reflector reflects the laser irradiated by the laser irradiation part as it is, and irradiates the surface of the part.

The moving unit is configured to move the irradiation area of the laser irradiated by the laser irradiation unit 10 along the surface of the component.

1, the moving unit includes a table 30 on which the component 100 is placed, a rotation unit 32 for rotating the table 30, a laser irradiation unit 32 disposed on the table 30, And an ascending and descending portion 36 for ascending and descending the upper support 34 with respect to the table 30. [

Thus, the moving unit moves the laser irradiation area on the part, for example, so that the laser can be uniformly irradiated onto the entire inner peripheral surface of the part.

The table 30 is rotatably installed around a central axis, and the part 100 to be cleaned is fixedly installed on the table 30. Accordingly, when the table 30 rotates, the part 100 placed on the table 30 moves relative to the laser irradiation unit 10 while rotating.

The rotation unit 32 applies a driving force to the table 30 to rotate the table 30. As the table 30 rotates, the component placed on the table 30 with respect to the laser irradiation area whose position is fixed can be rotated along the inner circumferential surface of the component while irradiating the laser.

The rotation unit 32 may include, for example, a driving motor connected to the table 30, and may be applied to all the structural surfaces for rotating the table 30 by transmitting power to the table 30 in addition to the driving motor Do.

An upper support 34 is disposed above the table 30 on which the part is placed. The laser irradiation unit 10 is installed on an upper support 34 disposed on the upper part of the component and irradiates the laser in a downward direction.

The upper support 34 supports the laser irradiator 10 and the reflector 20 disposed under the laser irradiator 10 at the upper part of the part and moves the laser irradiator 10 and the reflector 20 upward and downward, .

The positions of the laser irradiation unit 10 and the reflector 20 disposed thereunder are changed in accordance with the upward and downward movement of the upper support 34 so that laser cleaning can be performed in a desired position along the vertical direction of the component 100. That is, the rake irradiation region can be moved in the vertical direction of the component 100 in accordance with the upward and downward movement of the upper support 34.

The ascending and descending portion 36 is connected to the upper support 34 to move the upper support 34 up and down. As the upper support 34 is moved up and down, the laser irradiation unit 10 and the lower reflector 20 are moved up and down along the y-axis direction to move the laser irradiation region up and down on the inner surface of the component, . Thus, it is possible to evenly irradiate a laser beam to a necessary portion of the component 100 along the entire vertical direction.

The ascending and descending portion 36 may include a driving cylinder connected to the upper support 34, for example. It is possible to apply both the driving cylinder and the structure for moving the upper support rod 34 up and down by transmitting power to the upper support rod 34. [

As described above, the cleaning apparatus of the present embodiment can move the laser irradiation position three-dimensionally in accordance with the driving of the moving part with respect to the inner peripheral surface of the component 100, and irradiate the laser to the required position. Therefore, laser cleaning can be performed on a desired area of the entire surface of the component.

The cleaning apparatus further includes an adjusting unit for adjusting a focal position of the laser beam irradiated from the laser irradiating unit 10 in conformity with the irregular surface of the component 100. The laser cleaning can be effectively and easily performed regardless of the irregular surface of the component through the adjustment portion.

The controller adjusts the angle of the reflector 20 to adjust the angle of the laser irradiator 10 so that the laser irradiator 10 and the reflector 20 are spaced apart from each other, And an angle adjuster for varying the reflection angle of the laser beam.

The focal distance moving unit varies the focal distance according to the concave and convex portions of the surface of the component so that the laser energy is accurately applied to the contaminants on the surface regardless of the shape of the component surface.

In this embodiment, the focal length moving unit controls the laser focal distance by adjusting the separation distance of the reflecting mirror 20 with respect to the laser irradiating unit 10.

The focal distance moving unit includes a guide bar 40 installed vertically movably on an upper support 34 on which a laser irradiator 10 is mounted and a reflector 20 mounted on a tip of the guide bar 40, And a vertical driving unit 42 for adjusting the distance between the laser irradiation unit 10 and the reflecting mirror 20 by moving the laser irradiation unit 10 up and down.

The guide bar 40 may extend vertically from the upper support 34 toward the table 30, for example, as shown in FIG. At the lower end of the guide bar 40, a reflector 20 is installed. The reflecting mirror 20 is provided on the reflecting mirror 20 so as to be positioned immediately under the laser irradiating portion 10. [ The guide bar 40 supports the reflector 20 and moves the reflector 20 if necessary.

The focal position of the laser beam as well as the irradiation position of the laser beam reflected by the reflecting mirror 20 changes depending on the movement of the reflecting mirror 20 provided on the guide bar 40. [

The vertical driving unit 42 is connected to the guide bar 40 to vertically move the guide bar 40. As the guide bar 40 is moved up and down, the reflector 20 provided at the tip of the guide bar 40 is moved up and down along the y-axis direction as shown in FIG. 1, 20 are variable.

Accordingly, the focal length of the laser beam reflected by the reflecting mirror 20 can be adjusted by changing the distance between the laser irradiating unit 10 and the reflecting mirror 20.

The vertical driving part 42 may include a driving cylinder connected to the guide bar 40, for example. All the structural surfaces for moving the guide bar 40 up and down by transmitting power to the guide bar 40 in addition to the drive cylinder are applicable.

The angle adjusting unit varies the irradiation angle of the laser reflected by the reflecting mirror 20 according to the concave portion and the convex portion of the surface of the component so that the laser energy is accurately applied to the contaminant on the surface regardless of the shape of the surface of the component.

In the present embodiment, the angle adjusting unit controls the laser irradiation angle by adjusting the angle of the reflecting mirror 20 with respect to the laser irradiating unit 10.

The angle adjusting unit includes a ring member 50 fitted to the guide bar 40 so as to be slidable along the guide bar 40 and a ring member 50 installed on the guide bar 40, The reflector 20 is rotatably hinged to the ring member 50 and is connected to the link member 50 at the tip of the guide bar 40, (Not shown).

The ring member 50 is a member slidably inserted into the guide bar 40 and is moved up and down along the guide bar 40 in accordance with the driving of the up and down driving unit 52.

The upper and lower driving part 52 is installed on the guide bar 40 and extends downward to be connected to the ring member 50. The angle of reflection of the reflecting mirror 20 is changed while the ring member 50 is moved up and down along the guide bar 40 as the up and down driving unit 52 is stretched and driven.

Thus, the irradiation position of the laser beam irradiated from the laser irradiation unit 10 and reflected by the reflecting mirror 20 can be finely adjusted.

The up and down driving unit 52 may include a driving cylinder installed in the guide bar 40 and connected to the ring member 50. It is possible to apply all the structural surfaces for moving the ring member 50 up and down along the guide bar 40 by transmitting power to the ring member 50 in addition to the driving cylinder.

As shown in FIG. 1, the upper rear side of the reflector 20 is hinged to one side of the ring member 50 via a hinge shaft 56 so as to be rotatable. The lower side of the rear surface of the reflector 20 is hinged to one end of the link member 54 via a hinge shaft 57 so as to be rotatable. The other end of the link member 54 is hinged to the tip of the guide bar 40 so as to be rotatable via a hinge shaft 58. The lower side of the reflector 20 is hinged to the tip end of the guide bar 40 through a link member 54 so as to be rotatable.

When the ring member 50 is lifted up and down with respect to the guide bar 40, the lower side of the reflector 20 is connected to the ring member 50 in a state of being connected to the tip of the guide bar 40 via the link member 54 The upper side of the connected reflector 20 is pulled up or moved downward. Thus, the angle of the reflecting mirror 20 is changed while the reflecting mirror is rotated about the hinge axis.

The upper and lower driving parts 52 for driving the ring member 50 move in the same manner as the guide bars 40 in the up and down directions of the guide bars 40 while being installed on the guide bars 40. As described above, when the guide bar 40 is moved up and down, the ring member 50 is also moved. Therefore, when the guide bar 40 is moved up and down, the reflection angle of the reflector 20 can be maintained.

Hereinafter, the pollutant removal process of the present embodiment for the uneven surface of the component will be described with reference to FIGS. 1 and 3. FIG.

When the contaminant removing process is performed on the surface of the component 100, the surface of the component is irradiated with the laser from the laser irradiation unit 10. A laser having an ultrasound pulse of a picosecond or less is generated from the laser irradiation unit 10, and the laser thus generated is irradiated on the surface of the component. Thus, the laser is locally irradiated on the surface of the contaminated component, and the peak energy of the pulses is applied to the pollutant to remove contaminants.

Contaminants can be removed throughout the part surface by removing the contaminants as the part surface is irradiated with a laser and moving the laser irradiation area along the part surface.

That is, when the table 30 is rotated, the part 100 placed on the table 30 is rotated. The laser irradiation area is moved along the inner surface of the part while the part is rotated with respect to the fixed laser irradiation position. In accordance with the driving of the lifting / lowering section 36, the upper support table 34 is moved up and down to move the laser irradiation area up and down with respect to the component. As described above, the laser can be irradiated to the entire surface of the component 100 by the rotational movement of the component and the up-and-down movement of the upper support table 34.

In this process, it is possible to perform laser cleaning on the curved surface of the component by moving the laser focal length or position finely with respect to the bend of the concavo-convex shape formed on the surface of the component.

3, it is possible to adjust the distance (hereinafter referred to as focal length R) from the reflecting mirror 20 to the laser focus by adjusting the distance L between the laser irradiating portion 10 and the reflecting mirror 20 have.

When the distance L between the laser irradiation unit 10 and the reflector 20 is shortened, the focal length R becomes long. On the contrary, when the distance L between the laser irradiation unit 10 and the reflector 20 is increased, The distance R becomes shorter.

When the vertical driving unit 42 is driven, the guide bar 40 is moved up and down with respect to the upper support 34 so that the laser beam 10 mounted on the upper support 34 is guided to the reflector (20). Therefore, the distance L between the laser irradiating unit 10 and the reflecting mirror 20 can be varied, and the focal length R of the laser reflected by the reflecting mirror 20 can be varied.

For example, in the case of a portion protruding from the component surface, the focal length R of the laser irradiated to the surface protruding from the reflector 20 should be shortened as the distance L between the surface and the reflector 20 is reduced. When the guide bar 40 moves downward according to the driving of the vertical driving part 42, the distance L between the laser irradiation part 10 and the reflecting mirror 20 is increased and the focal distance R is shortened .

When the guide bar 40 is moved upward, the position of the focus P is changed because the position of the reflector 20 is moved. In this case, the upper support 34 itself is moved downward, The position of the reflecting mirror 20 can be shifted to the position before the movement so that the position of the focus P can be prevented from varying.

As described above, the focal distance of the laser reflected from the reflector 20 can be shortened or long, and the laser can be irradiated with the focal point P accurately according to the shape of the irregularities of the surface of the component.

Further, by adjusting the angle of the reflecting mirror 20, the angle of irradiation of the laser beam reflected by the reflecting mirror 20 can be changed.

When the angle of the reflector 20 is changed, the angle of irradiation of the laser beam to be irradiated to the reflector 20 is changed, and finally, the focus position of the laser can be varied.

When the up and down driving unit 52 is driven, the ring member 50 is moved up and down along the guide bar 40, and the reflecting mirror 20 hinged to the ring member 50 is moved. The reflector 20 is rotatably coupled to the guide bar 40 via a link member 54. The reflector 20 is pivotally moved about the hinge axis by being pulled or pushed down by the movement of the ring member 50, . Therefore, the angle of the reflecting mirror 20 changes finely with the upward and downward movement of the ring member 50.

When the angle of the reflector 20 changes, the laser beam irradiated from the laser irradiator 10 is reflected by the reflector 20 and the position of the focus P finally formed on the surface of the component 100 is changed. Accordingly, the laser focal point P can be accurately moved to a desired portion to effectively remove contaminants.

For example, in the case of a recessed corner that is perpendicular to the vertical plane of the component 100, if the laser is reflected horizontally in the reflector 20, the focus P can not be accurately positioned at the corner. Accordingly, when the angle of the reflector 20 is adjusted, the reflection angle of the laser changes, and the angle of the laser beam varies from horizontal to upward or downward. As the laser irradiation angle is varied, the position of the focus (P) also moves along the laser irradiation angle.

By moving the focus P position in this manner, it is possible to remove the contaminants by aligning the laser focus P accurately with the corners formed on the component.

While the illustrative embodiments of the present invention have been shown and described, various modifications and alternative embodiments may be made by those skilled in the art. Such variations and other embodiments will be considered and included in the appended claims, all without departing from the true spirit and scope of the invention.

10: laser irradiation part 20: reflector
30: Table 32:
34: upper support frame 36:
40: Guide bar 42: Vertical drive
50: ring member 52:
54: Link member

Claims (12)

An irregular part cleaning apparatus for removing a contaminant containing a metal or a metal reaction product formed on a component having a concavo-convex surface of a metal deposition process apparatus,
A laser irradiating section for irradiating a laser having an ultrasound pulse locally with a picosecond pulse or less to a concavo-convex surface of a contaminant-impregnated component to apply a peak energy of an ultrasonic pulse to the surface of the component to clean the contaminant; And a reflecting mirror for reflecting the laser beam irradiated from the laser irradiating unit to the surface of the concavo-convex part. The method according to claim 1,
The laser irradiating unit generates a laser having a short pulse of less than a picosecond by reducing the pulse width by mode-locking and Q-switching a solid laser, a liquid laser, a gas laser or a semiconductor laser A cleaning unit for cleaning the concavo-convex part. 3. The method of claim 2,
Wherein the laser is a laser of a Pomokcho or Atoscho pulse. The method according to claim 1,
And the peak energy of the laser is 0.1 to 125 占.. The method according to claim 1,
Wherein the laser irradiation angle of the material is 30 to 90 degrees. 6. The method according to any one of claims 1 to 5,
Wherein the moving unit comprises a table on which the component is placed, a rotating part for rotating the table, an upper support provided on the table and provided with the laser irradiation part, and a lifting and lowering part for lifting and lowering the upper support against the table Cleaning device for mold parts. The method according to claim 6,
Wherein the cleaning device further comprises an adjuster for adjusting a focal position of the laser irradiated by the laser irradiator in conformity with the irregular surface of the component. 8. The method of claim 7,
The adjusting unit may include a focal distance shifting unit for changing a focal distance by changing a distance between the laser irradiating unit and the reflecting mirror, and an angle adjusting unit for varying a reflecting angle of the laser beam irradiated from the laser irradiating unit by adjusting the angle of the reflecting mirror. Parts cleaning device. 9. The method of claim 8,
Wherein the focal length moving part includes a guide bar which is vertically movable on an upper support frame on which a laser irradiation part is installed and on which a reflector is installed, and a vertical drive part for moving the guide bar up and down. 10. The method of claim 9,
Wherein the angle adjusting portion includes a ring member fitted to the guide bar and slidably installed along the guide bar, and a vertical driving portion installed on the guide bar and connected to the ring member to move the ring member up and down, And is rotatably hinged to the tip end of the guide bar via a link member. The method according to claim 6,
Wherein the reflecting mirror is concave in the reflective surface. The method according to claim 6,
Wherein the reflecting mirror has a reflective surface convex to the outside.

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