KR20170052777A - Novel compound and organic electroluminescent device comprising same - Google Patents
Novel compound and organic electroluminescent device comprising same Download PDFInfo
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Abstract
More particularly, the present invention relates to a novel compound, and more particularly, to a compound having at least two arylamine groups when applied to an organic light emitting device to form a HOMO that facilitates hole injection, thereby facilitating hole injection, Tg can be realized. In particular, since the molecular arrangement of the thin film is excellent, it is possible to increase the mobility, the low driving voltage, the low power consumption, the high efficiency and the long life.
Description
The present invention relates to a novel compound and an organic light emitting device comprising the same.
In recent years, an organic light emitting device capable of being driven by a low voltage in a self-luminous mode has a better viewing angle and contrast ratio than a liquid crystal display (LCD), which is a mainstream of a flat panel display device, It has been attracting attention as a next generation display device because it is advantageous in terms of power consumption and has a wide color reproduction range.
A material used as an organic material layer in an organic light emitting device can be classified into a light emitting material, a hole injecting material, a hole transporting material, an electron transporting material, and an electron injecting material depending largely on functions. The light emitting material may be classified into a polymer and a low molecular weight depending on the molecular weight, and may be classified into a fluorescent material derived from singlet excitation state of electrons and a phosphorescent material derived from the triplet excited state of electrons according to an emission mechanism, Can be classified into blue, green and red light emitting materials and yellow and orange light emitting materials necessary for realizing a better natural color depending on the emission color. Further, in order to increase the color purity and to increase the luminous efficiency through energy transfer, a host / dopant system can be used as a luminescent material. The principle is that when a small amount of dopant having a smaller energy band gap and a higher luminous efficiency than a host mainly constituting the light emitting layer is mixed with the light emitting layer in a small amount, the excitons generated in the host are transported to the dopant to emit light with high efficiency. At this time, since the wavelength of the host is shifted to the wavelength of the dopant, the light of the desired wavelength can be obtained according to the type of the dopant and the host.
Especially, amine derivatives having a carbazole skeleton have been extensively studied in the hole injecting and hole transporting materials used in such organic light emitting devices, but they have been difficult to put to practical use due to higher driving voltage, lower efficiency and shorter lifetime. Accordingly, efforts have been made to develop an organic light emitting device having low voltage driving, high luminance, and long life using a material having excellent characteristics.
In order to solve the above-mentioned problems, the present invention provides an organic electroluminescent device having excellent hole injection and hole transporting characteristics, high Tg, and excellent molecular arrangement of thin film, , Low power consumption, high efficiency, and long life.
The present invention also provides an organic electroluminescent device which is excellent in hole injection and hole transporting properties and can realize a high Tg and is particularly excellent in the molecular arrangement of the thin film, And an organic electroluminescent device.
In order to accomplish the above object, the present invention provides a compound represented by the following formula 1:
[Chemical Formula 1]
In this formula,
L 1 is a single bond, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkyl group of C 1 -30, C 1 -30 alkoxy group, an alkenyl group, C 6 unsubstituted or substituted by Silane C of 2 -30 of the An arylene group of -50 ; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Rengi,
L 2 is a biphenyl group substituted or unsubstituted with a silane group, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl group, a C 1 -30 alkoxy group, a C 2 -30 alkenyl group, Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkoxy group of the alkyl group of 1 -30 C, -30 C 1, C 2 -30 alkenyl group, an emitter which is unsubstituted or substituted with a phenyl group of the silane; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkenyl group, a fluorenyl which is unsubstituted or substituted with a silane of the C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the fluorene group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl groups, aryl fused three ring heteroatoms which is unsubstituted or substituted by a silane group of ego,
Ar 1, Ar 2, Ar 3 and Ar 4 are each independently a heavy hydrogen, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the alkenyl group, A C 6 -50 aryl group unsubstituted or substituted with a silane group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Lt; / RTI &
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently hydrogen; heavy hydrogen; halogen; An amino group; A nitrile group; A nitro group; A silane group; Alkyl group of deuterium, halogen group, amino group, nitrile group, C 1 -30, which is unsubstituted or substituted with nitro; A C 2 -C 30 alkenyl group which is unsubstituted or substituted with a halogen, an amino group, a nitrile group, or a nitro group; A C 2 -C 30 alkynyl group which is unsubstituted or substituted with a nitro group, a halogen, an amino group, a nitrile group or a nitro group; A halogen, an amino group, a nitrile group, an alkoxy group of C 1 - 30 which is unsubstituted or substituted with a nitro group; A C 6 -C 30 aryloxy group optionally substituted by deuterium, a halogen, an amino group, a nitrile group, a nitro group; An aryl group of deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 6 -50 which is unsubstituted or substituted by a group of the silane of; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl .
Also, the present invention provides an organic light emitting device including the compound represented by Formula 1.
The compound of the present invention can be easily injected into a hole by injecting a hole injecting compound containing at least two arylamine groups into an organic light emitting device, and can exhibit high Tg, In particular, since the molecular arrangement of the thin film is excellent, it is possible to increase the mobility, the low driving voltage, the low power consumption, the high efficiency and the long life.
1 schematically shows a cross section of an OLED according to an embodiment of the present invention.
The sign
10: substrate
11: anode
12: Hole injection layer
13: hole transport layer
14:
15: electron transport layer
16: cathode
The compounds of the present invention are represented by the following formula (1).
[Chemical Formula 1]
In this formula,
L 1 is a single bond, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkyl group of C 1 -30, C 1 -30 alkoxy group, an alkenyl group, C 6 unsubstituted or substituted by Silane C of 2 -30 of the An arylene group of -50 ; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Rengi,
L 2 is a biphenyl group substituted or unsubstituted with a silane group, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl group, a C 1 -30 alkoxy group, a C 2 -30 alkenyl group, Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkoxy group of the alkyl group of 1 -30 C, -30 C 1, C 2 -30 alkenyl group, an emitter which is unsubstituted or substituted with a phenyl group of the silane; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkenyl group, a fluorenyl which is unsubstituted or substituted with a silane of the C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the fluorene group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl groups, aryl fused three ring heteroatoms which is unsubstituted or substituted by a silane group of ego,
Ar 1, Ar 2, Ar 3 and Ar 4 are each independently a heavy hydrogen, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the alkenyl group, A C 6 -50 aryl group unsubstituted or substituted with a silane group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Lt; / RTI &
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently hydrogen; heavy hydrogen; halogen; An amino group; A nitrile group; A nitro group; A silane group; Alkyl group of deuterium, halogen group, amino group, nitrile group, C 1 -30, which is unsubstituted or substituted with nitro; A C 2 -C 30 alkenyl group which is unsubstituted or substituted with a halogen, an amino group, a nitrile group, or a nitro group; A C 2 -C 30 alkynyl group which is unsubstituted or substituted with a nitro group, a halogen, an amino group, a nitrile group or a nitro group; A halogen, an amino group, a nitrile group, an alkoxy group of C 1 - 30 which is unsubstituted or substituted with a nitro group; A C 6 -C 30 aryloxy group optionally substituted by deuterium, a halogen, an amino group, a nitrile group, a nitro group; An aryl group of deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 6 -50 which is unsubstituted or substituted by a group of the silane of; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl .
Specifically, the compound of Formula 1 is preferably a compound represented by Formula 2 or 3 below. In particular, since the molecular arrangement of the thin film is excellent, it is possible to increase the mobility, the low driving voltage, the low power consumption, the high efficiency and the long life.
(2)
(3)
Wherein L 1 , Ar 1 , Ar 2 , Ar 3 , Ar 4 , R 1 , R 2 , R 3 , R 4 and R 5 are as defined in Formula (1)
X is O, S, CR 6 R 7 or SiR 8 R 9 , wherein R 6 , R 7 , R 8 and R 9 are each independently the same as defined for R 1 to R 5 .
More specifically, the compound represented by Formula 2 or 3 is preferably a compound represented by any one of the following formulas. In this case, the life and efficiency can be further improved.
[Formula 2-1]
[Formula 2-2]
[Formula 2-3]
[Formula 3-1]
[Formula 3-2]
[Formula 3-3]
In the above formulas, L 1 , Ar 1 , Ar 3 , Ar 4 , R 1 , R 2 , R 3 , R 4 and R 5 are as defined in Formula (1)
Ar 5 and Ar 6 are each independently Ar 1 To Ar < 4 >.
In the present invention, specific examples of the compound represented by the formula (1) are as follows:
, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,
The compound of formula (1) according to the present invention is excellent in hole injection and hole transporting characteristics when applied to an organic light emitting device, has excellent electron blocking properties, can realize high triplet energy and high Tg, Power, high efficiency, and long life. In particular, when L 2 in the formula (1) includes a biphenyl group or a fluorene group, the molecular arrangement of the thin film is excellent, so that the mobility can be increased, the driving voltage can be reduced, the power consumption can be reduced, and high efficiency and long life can be obtained.
The compounds of the present invention may also be prepared via the following Reaction Scheme 1 or 2:
[Reaction Scheme 1]
[Reaction Scheme 2]
Wherein L 1 , L 2 , Ar 1 , Ar 2 , Ar 3 , Ar 4 , R 1 , R 2 , R 3 , R 4 and R 5 are as defined in Chemical Formula (1).
Also, the present invention provides an organic light emitting device comprising a compound represented by Formula 1 in an organic material layer. Specifically, it is included as a hole injecting material or a hole transporting material, At this time, the compound of the present invention may be used alone or in combination with a known organic light emitting compound.
In addition, the organic light emitting device of the present invention includes one or more organic layers including the compound represented by Formula 1, and the method of manufacturing the organic light emitting device will now be described.
The organic light emitting device includes an organic layer such as a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) between an anode and a cathode One or more can be included.
First, an anode electrode material having a high work function is deposited on the substrate to form an anode. At this time, the substrate can be a substrate used in a conventional organic light emitting device, and a glass substrate or a transparent plastic substrate having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness can be used. As the material for the anode electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO) and the like which are transparent and excellent in conductivity can be used. The anode electrode material can be deposited by a conventional anode formation method, and specifically, it can be deposited by a deposition method or a sputtering method.
Then, a hole injecting layer may be formed on the anode electrode. Specifically, the hole injecting layer may be formed by a method such as a vacuum deposition method, a spin coating method, a casting method, or a Langmuir-Blodgett (LB) method. More specifically, when the hole injection layer is formed by the vacuum deposition method, the deposition conditions vary depending on the compound used as the material of the hole injection layer, the structure and the thermal characteristics of the desired hole injection layer, and the like. A deposition temperature, a degree of vacuum of 10 -8 to 10 -3 torr, a deposition rate of 0.01 to 100 Å / sec, and a layer thickness range of 10 Å to 5 μm.
The hole injection layer material may be a compound represented by the formula (1) of the present invention, or may be used together with a known material. The known material is not particularly limited, and a phthalocyanine compound such as copper phthalocyanine disclosed in U.S. Patent No. 4,356,429 or a star burst type amine derivative TCTA (4,4 ', 4 "-tri (N-carbazolyl) M-MTDAPA (4,4 ', 4 "-tris (3-methylphenylamino) phenoxybenzene) , HI-406 (N 1, N 1 '- ( biphenyl-4,4'-diyl) bis (N 1 - (naphthalen-1-yl) -N 4, N 4 - diphenyl-1,4-benzene Diamine) can be used as the hole injection layer material.
Next, a hole transport layer may be formed on the hole injection layer. Specifically, the hole transport layer may be formed by a vacuum deposition method, a spin coating method, a casting method, an LB method, or the like. More specifically, in the case of forming the hole transporting layer by the vacuum deposition method, the deposition conditions vary depending on the compound used, but generally, the conditions can be selected in substantially the same range as the formation of the hole injection layer.
The hole transport layer material may be a compound represented by the general formula (1) of the present invention, or may be used in combination with a known material. The known material is not particularly limited and may be selected arbitrarily from common known materials used in the hole transport layer. Specifically, the hole transport layer material may be a carbazole derivative such as N-phenylcarbazole or polyvinylcarbazole, a carbazole derivative such as N, N'-bis (3-methylphenyl) -N, N'- Phenyl) -4,4'-diamine (TPD), and N, N'-di (naphthalene-1-yl) -N, N'-diphenylbenzidine Derivatives and the like can be used.
Thereafter, a light emitting layer may be formed on the hole transporting layer. Specifically, the light emitting layer material can be formed by a method such as a vacuum deposition method, a spin coating method, a casting method, a LB method and the like. More specifically, in the case of forming a light emitting layer by the vacuum vapor deposition method, the deposition conditions depend on the compound used Generally, it can be selected in a substantially same condition range as the formation of the hole injection layer. The light emitting layer material may be a known compound as a host or a dopant.
In addition, in addition to the compound as an example as a light emitting layer material is a fluorescent dopant Idemitsu Co. (Idemitsu Co.), available IDE102 or IDE105, or BD142 (N 6, N 12 in-bis (3,4-dimethylphenyl) -N 6, N 12 -dimethyisilclycene-6,12-diamine), phosphorescent dopant Ir (ppy) 3 (tris (2-phenylpyridine) iridium) as the phosphorescent dopant, F2Irpic (III) bis [4,6-difluorophenyl) -pyridinate-N, C2 '] picolinate) and UDC's red phosphorescent dopant RD61 can be vacuum vacuum deposited (doped).
When the phosphorescent dopant is used together with the phosphorescent dopant, a hole blocking material (HBL) may be further deposited by vacuum evaporation or spin coating to prevent triplet excitons or holes from diffusing into the electron transport layer. The hole blocking material that can be used at this time is not particularly limited, but any known hole blocking material may be used. For example, an oxadiazole derivative, a triazole derivative, a phenanthroline derivative, or a hole blocking material described in Japanese Patent Laid-Open Publication No. 11-329734 (A1) can be exemplified. Typically, Balq (bis Phenanthrolines based compounds such as UDC company BCP (bassocouroin), and the like can be used.
The electron transport layer may be formed by a vacuum deposition method, a spin coating method, a casting method, or the like. Specifically, the electron transporting layer may be formed by a vacuum deposition method.
The electron transport layer material serves to stably transport electrons injected from the electron injection electrode. The material is not particularly limited, and examples thereof include quinoline derivatives, especially tris (8-quinolinolato) aluminum (Alq 3 ), Or ET4 (6,6 '- (3,4-dimemethyl-1,1-dimethyl-1H-silanol-2,5-diyl) di-2,2'-bipyridine). In addition, an electron injection layer (EIL), which is a material having a function of facilitating the injection of electrons from the cathode, may be laminated on the electron transport layer. Examples of the electron injection layer material include LiF, NaCl, CsF, Li 2 O, BaO Can be used.
The deposition condition of the electron transport layer varies depending on the compound used, but can be generally selected within the same range of conditions as the formation of the hole injection layer.
Then, an electron injecting layer may be formed on the electron transporting layer, and the electron transporting layer may be formed by a vacuum deposition method, a spin coating method, a casting method, or the like, Can be formed by a vapor deposition method. Finally, a metal for forming a cathode is formed on the electron injection layer by a vacuum evaporation method, a sputtering method, or the like, and used as a cathode. As the metal for cathode formation, a metal, an alloy, an electrically conductive compound having a low work function, and a mixture thereof can be used. Specific examples thereof include Li, Mg, Al, Al-Li, Ca, Mg-In, Mg-Ag, . Also, a transmissive cathode using ITO or IZO may be used to obtain a front light emitting element.
The organic light emitting device of the present invention can have an organic light emitting device having various structures as well as an anode, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer and a cathode structure, Layer or an intermediate layer of two layers may be further formed.
The organic light emitting device of the present invention includes a compound having at least two arylamine groups represented by Formula 1 to form HOMO that facilitates hole injection, thereby facilitating hole injection, excellent hole transporting property, and high Tg In particular, the molecular arrangement of the thin film is excellent, resulting in increased mobility, low driving voltage, low power consumption, high efficiency and long life.
EXAMPLES Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited to the following examples.
Synthesis of OP
Preparation of various OPs for the synthesis of the target compound was synthesized through the above steps.
The synthesis method of the following OP1 is as follows.
To a round bottom flask was added 4-bromo-N, N- diphenylaniline 25.0 g, N4, N4'-diphenyl- [1,1'-biphenyl] -4,4'-diamine 26.0 g, t-BuONa 11.1 g, Pd 2 ( dba) 3 and 3.1 ml of (t-Bu) 3 P were dissolved in 500 ml of toluene, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 25.5 g (yield: 57%) of intermediate OP1.
Synthesis method of OP2
OP2 was synthesized by following the procedure for the synthesis of OP1 except that N- (4-bromophenyl) -N-phenylnaphthalen-1-amine was used instead of 4-bromo-N and N-diphenylaniline in the synthesis of OP1 . (Yield: 56%)
Synthesis method of OP3
N4, N4'-di (naphthalen-1-yl) - [1,1 '-biphenyl] -4,4'-diamine was substituted for N4, N4'- -biphenyl] -4,4'-diamine was used to synthesize OP3 (yield: 53%).
Synthesis method of OP4
OP4 was synthesized by following the procedure for the synthesis of OP1 except that 3-bromo-9-phenyl-9H-carbazole was used instead of 4-bromo-N and N-diphenylaniline in the synthesis of OP1. %)
Synthesis method of OP5
OP5 was synthesized by following the procedure for the synthesis of OP1 except that 3-bromo-1-phenyl-1H-indole was used instead of 4-bromo-N, N-diphenylaniline in the synthesis of OP1. %)
Synthesis method of OP6
OP6 was synthesized by following the procedure for the synthesis of OP1 except that 3- (4-bromophenyl) -1-phenyl-1H-indole was used instead of 4-bromo-N and N-diphenylaniline in the synthesis of OP1 . (Yield: 55%).
Compound 1 synthesis
0.2 g of Pd 2 (dba) 3 and 0.2 ml of (t-Bu) 3 P were added to a round bottom flask with toluene 50 ml, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 2.51 g (yield 63%) of Compound 1.
m / z: 770.34 (100.0%), 771.34 (62.0%), 772.35 (18.3%), 773.35
Compound 2 synthesis
Compound 2 was synthesized by using OP4 instead of OP1 in the same manner as Compound 1. [ (Yield: 59%)
m / z: 768.33 (100.0%), 769.33 (61.0%), 770.33 (19.2%), 771.34 (3.6%), 769.32
Compound 3 synthesis
Preparation of 2- (4-bromophenyl) -1-phenyl-1H-indole
30.0 g of 2-bromo-1-phenyl-1H-indole, 36.4 g of bis (pinacolato) diboron, 0.4 g of Pd (dppf) Cl 2 and 32.5 g of KOAc were dissolved in 650 ml of toluene and then stirred under reflux in a round bottom flask. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with EA, filtered under reduced pressure, and then purified by column to obtain 28.85 g (yield) of intermediate 1-phenyl-2- (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2- Yield: 82%). 19.35 g of the 1-phenyl-2- (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) -1H- indole, 15 g of 1-bromo- dioxane (150 ml), K 2 CO 3 (2M) ml and Pd (PPh 3 ) 4 ( 1.9 g) were added, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 13.6 g (yield 71%) of 2- (4-bromophenyl) -1-phenyl-1H-indole.
Prepared in a round bottom flask 2.5 g OP1, the 2- (4-bromophenyl) -1- phenyl-1H-indole 1.65 g, t-BuONa 0.6 g, Pd 2 (dba) 3 0.16 g, (t-Bu) 3 P Was dissolved in 45 ml of toluene, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure and then subjected to column purification to obtain 2.16 g (yield 59%) of Compound 3.
m / z: 846.37 (100.0%), 847.38 (67.6%), 848.38 (22.5%), 849.38 (5.1%), 847.37
Compound 4 synthesis
Compound 4 was synthesized by using OP2 instead of OP1 in the same manner as Compound 3. [ (Yield: 57%)
m / z: 896.39 (100.0%), 897.39 (71.9%), 898.39 (26.2%), 899.40 (5.9%), 897.38
Compound 5 synthesis
Compound 5 was synthesized by using OP3 in place of OPl in the same manner as Compound 3. [ (Yield: 57%)
m / z: 946.40 (100.0%), 947.41 (76.3%), 948.41 (28.7%), 949.41 (7.3%), 947.40 (1.5%), 950.42
Compound 6 synthesis
Compound 6 was synthesized by using OP4 instead of OP1 in the same manner as Compound 3. [ (Yield 60%)
m / z: 844.36 (100.0%), 845.36 (67.6%), 846.36 (23.1%), 847.37 (4.9%), 845.35
Compound 7 synthesis
Compound 7 was synthesized by using OP5 in place of OPl in the same manner as in Compound 3. [ (Yield: 55%)
m / z: 794.34 (100.0%), 795.34 (64.2%), 796.35 (19.6%), 797.35
Compound 8 synthesis
Compound 8 was synthesized by using OP6 in place of OPl in the same manner as Compound 3. [ (Yield: 61%)
m / z: 870.37 (100.0%), 871.38 (69.7%), 872.38 (24.0%), 873.38 (5.6%), 871.37 (1.5%), 872.37
Compound 9 synthesis
0.2 g of Pd 2 (dba) 3 and 0.2 ml of (t-Bu) 3 P were added to a round bottom flask with a solution of 3.0 g of OP1, 1.6 g of 3-bromo-1-phenyl- ml, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 2.59 g (yield 65%) of Compound 9.
m / z: 770.34 (100.0%), 771.34 (62.0%), 772.35 (18.3%), 773.35
m / z: 768.33 (100.0%), 769.33 (61.0%), 770.33 (19.2%), 771.34 (3.6%), 769.32
m / z: 794.34 (100.0%), 795.34 (64.2%), 796.35 (19.6%), 797.35
Preparation of 3- (4-bromophenyl) -1-phenyl-1H-indole
1-phenyl-1H-indole was used instead of 2-bromo-1-phenyl-1H-indole in the same manner as in the production of 2- (4-bromophenyl) .
OP1 3.0 prepared in a round bottom flask g, the 3- (4-bromophenyl) -1- phenyl-1H-indole 1.98 g, t-BuONa 0.75 g, Pd 2 (dba) 3 0.2 g, (t-Bu) 3 P Was dissolved in 55 ml of toluene, and the mixture was stirred under reflux. After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 2.41 g (yield: 55%) of
m / z: 846.37 (100.0%), 847.38 (67.6%), 848.38 (22.5%), 849.38 (5.1%), 847.37
m / z: 844.36 (100.0%), 845.36 (67.6%), 846.36 (23.1%), 847.37 (4.9%), 845.35
2.05 g of N4, N4'-diphenyl- [1,1'-biphenyl] -4,4'-diamine, 4.55 g of 3- (4-bromophenyl) 0.9 g of Pd 2 (dba) 3, 0.2 g of Pd 2 (dba) 3 and 0.5 ml of (t-Bu) 3 P were dissolved in 80 ml of toluene, After confirming the reaction by TLC, water was added and the reaction was terminated. The organic layer was extracted with MC, filtered under reduced pressure, and then subjected to column purification to obtain 3.11 g (yield: 60%) of
m / z: 870.37 (100.0%), 871.38 (69.7%), 872.38 (24.0%), 873.38 (5.6%), 871.37 (1.5%), 872.37
9,9-dimethyl-N2, N7-diphenyl-9H-fluorene-2,7-diamine instead of N4, N4'- diphenyl- [1,1'- biphenyl] -4,4'- Was used to synthesize
m / z: 910.40 (100.0%), 911.41 (73.0%), 912.41 26.3%, 913.41 6.4%, 911.40 1.5%, 912.40 1.1%
m / z: 851.40 (100.0%), 852.41 (67.5%), 853.41 (22.4%), 854.41 (5.1%), 852.40
Compound 17 synthesis
Compound 17 was synthesized in the same manner as in
m / z: 849.39 (100.0%), 850.39 (69.0%), 851.39 (23.1%), 852.40 (4.9%
Manufacture of organic light emitting device
An organic light emitting device was prepared according to the structure shown in FIG. The organic light emitting device includes an anode (hole injecting electrode 11) / a
The following materials were used for the
Manufacture of organic light emitting device
Example One
The glass substrate coated with thin film of indium tin oxide (ITO) 1500 Å in thickness was washed with distilled water ultrasonic waves. After the distilled water was cleaned, the substrate was ultrasonically cleaned with a solvent such as isopropyl alcohol, acetone, or methanol, dried, and transferred to a plasma cleaner. Then, the substrate was cleaned using oxygen plasma for 5 minutes, and then a thermal vacuum evaporator evaporator) to form a hole injection layer compound 1 600 Å and a hole transport layer NPB 250 Å. Next, the light emitting layer was doped with BH01: BD01 5% to form a 300 Å layer. Next, an ET01: Liq (1: 1) 300 Å film was formed as an electron transport layer,
Example 2 to Example 17
An organic light emitting device was manufactured in the same manner as in Example 1, in which the hole injection layers were formed using the compounds 2 to 17, respectively.
Comparative Example One
The device was fabricated in the same manner except that the hole injection layer of Example 1 was used as DNTPD instead of the compound 1.
Comparative Example 2 to Comparative Example 7
Except that the hole injection layer of Example 1 was used in Ref.1 to Ref.6 instead of Compound 1, respectively.
Evaluation of performance of organic light emitting device
A voltage was applied to the Keithley 2400 source measurement unit to inject electrons and holes and the luminance was measured using a Konica Minolta spectroscope (CS-2000). The performance of the organic light emitting devices of the examples and comparative examples was evaluated by measuring the current density and the luminance with respect to the applied voltage under the atmospheric pressure condition, and the results are shown in Table 1.
(hr)
In Table 1, " - " indicates that the light emission phenomenon disappears within one hour.
As shown in Table 1, the compounds of the present invention are superior to the compounds of Comparative Examples 1 to 7 in all respects. Compared with the comparative examples 2 to 5, the compound of the present invention has a high HOMO which is easily injected by hole substitution with two or more arylamine groups, and thus the driving voltage is remarkably lowered. Compared with Comparative Examples 1, 6 and 7, when biphenyl and fluorene groups were used instead of the phenylamine group between indole 2,3 and arylamine substitution, the hole mobility was excellent and the thin film arrangement was excellent and the efficiency and lifetime were significantly It can be seen that it is improved.
Claims (7)
[Chemical Formula 1]
In this formula,
L 1 is a single bond, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkyl group of C 1 -30, C 1 -30 alkoxy group, an alkenyl group, C 6 unsubstituted or substituted by Silane C of 2 -30 of the An arylene group of -50 ; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Rengi,
L 2 is a biphenyl group substituted or unsubstituted with a silane group, a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl group, a C 1 -30 alkoxy group, a C 2 -30 alkenyl group, Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkoxy group of the alkyl group of 1 -30 C, -30 C 1, C 2 -30 alkenyl group, an emitter which is unsubstituted or substituted with a phenyl group of the silane; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, an alkenyl group, a fluorenyl which is unsubstituted or substituted with a silane of the C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the fluorene group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl groups, aryl fused three ring heteroatoms which is unsubstituted or substituted by a silane group of ego,
Ar 1, Ar 2, Ar 3 and Ar 4 are each independently a heavy hydrogen, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 of the alkenyl group, A C 6 -50 aryl group unsubstituted or substituted with a silane group; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl Lt; / RTI &
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently hydrogen; heavy hydrogen; halogen; An amino group; A nitrile group; A nitro group; A silane group; Alkyl group of deuterium, halogen group, amino group, nitrile group, C 1 -30, which is unsubstituted or substituted with nitro; A C 2 -C 30 alkenyl group which is unsubstituted or substituted with a halogen, an amino group, a nitrile group, or a nitro group; A C 2 -C 30 alkynyl group which is unsubstituted or substituted with a nitro group, a halogen, an amino group, a nitrile group or a nitro group; A halogen, an amino group, a nitrile group, an alkoxy group of C 1 - 30 which is unsubstituted or substituted with a nitro group; A C 6 -C 30 aryloxy group optionally substituted by deuterium, a halogen, an amino group, a nitrile group, a nitro group; An aryl group of deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 6 -50 which is unsubstituted or substituted by a group of the silane of; Or a deuterium, a halogen, an amino group, a nitrile group, a nitro group, a C 1 -30 alkyl, C 1 -30 alkoxy group, C 2 -30 alkenyl, C 2 -50 which is unsubstituted or substituted with a silane of the heteroaryl .
Wherein said compound is represented by the following formula (2) or (3):
(2)
(3)
Wherein L 1 , Ar 1 , Ar 2 , Ar 3 , Ar 4 , R 1 , R 2 , R 3 , R 4 and R 5 are as defined in Formula (1)
X is O, S, CR 6 R 7 or SiR 8 R 9 , wherein R 6 , R 7 , R 8 and R 9 are each independently the same as defined for R 1 to R 5 .
Wherein said compound is represented by any one of the following formulas:
[Formula 2-1]
[Formula 2-2]
[Formula 2-3]
[Formula 3-1]
[Formula 3-2]
[Formula 3-3]
In the above formulas, L 1 , Ar 1 , Ar 3 , Ar 4 , R 1 , R 2 , R 3 , R 4 and R 5 are as defined in Formula (1)
Ar 5 and Ar 6 are each independently Ar 1 To Ar < 4 >.
A compound represented by any one of the following formulas:
, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,
Wherein the organic material layer comprises two or more compounds according to claim 4.
Wherein the organic material layer contains the compound of claim 1 as a hole injecting material or a hole transporting material.
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Cited By (3)
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KR20190078040A (en) * | 2017-12-26 | 2019-07-04 | 덕산네오룩스 주식회사 | Compound for organic electronic element, organic electronic element using the same, and an electronic device thereof |
KR20190088248A (en) * | 2018-01-18 | 2019-07-26 | 덕산네오룩스 주식회사 | Compound for organic electronic element, organic electronic element comprising the same, and electronic device thereof |
WO2020262925A1 (en) * | 2019-06-24 | 2020-12-30 | 덕산네오룩스 주식회사 | Organic electric element |
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2015
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Cited By (8)
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KR20190078040A (en) * | 2017-12-26 | 2019-07-04 | 덕산네오룩스 주식회사 | Compound for organic electronic element, organic electronic element using the same, and an electronic device thereof |
KR20190088248A (en) * | 2018-01-18 | 2019-07-26 | 덕산네오룩스 주식회사 | Compound for organic electronic element, organic electronic element comprising the same, and electronic device thereof |
US11758806B2 (en) | 2018-01-18 | 2023-09-12 | Duk San Neolux Co., Ltd. | Compound for organic electric element, organic electric element using the same, and an electronic device thereof |
WO2020262925A1 (en) * | 2019-06-24 | 2020-12-30 | 덕산네오룩스 주식회사 | Organic electric element |
KR20210000203A (en) * | 2019-06-24 | 2021-01-04 | 덕산네오룩스 주식회사 | Organic electric device |
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