KR20170043802A - Deposition Film Forming Apparatus - Google Patents

Deposition Film Forming Apparatus Download PDF

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Publication number
KR20170043802A
KR20170043802A KR1020150143332A KR20150143332A KR20170043802A KR 20170043802 A KR20170043802 A KR 20170043802A KR 1020150143332 A KR1020150143332 A KR 1020150143332A KR 20150143332 A KR20150143332 A KR 20150143332A KR 20170043802 A KR20170043802 A KR 20170043802A
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KR
South Korea
Prior art keywords
gas
predetermined
substrate
support portion
substrate supporting
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Application number
KR1020150143332A
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Korean (ko)
Inventor
이승은
이유진
이재학
Original Assignee
주식회사 티지오테크
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Priority to KR1020150143332A priority Critical patent/KR20170043802A/en
Publication of KR20170043802A publication Critical patent/KR20170043802A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

The present invention relates to a deposition film forming apparatus. The deposition film forming apparatus according to an embodiment of the present invention includes a plurality of substrate supporting units (30). A plurality of rotary members (31) are arranged on the substrate supporting units (30), respectively, to rotate respective substrates (5). In at least a part of the substrate supporting units (30), a gas supply passage (51) receiving a predetermined gas is formed. A gas circulating passage (55) connected to the gas supply passage (51) to receive the predetermined gas is formed, wherein a planar cross section of the gas circulating passage is in a closed loop shape so that the predetermined gas is circulated. A plurality of gas dividing passages (57) branch from the gas circulating passage (55) to supply the predetermined gas to each of the rotary members (31).

Description

{Deposition Film Forming Apparatus}

The present invention relates to a vapor deposition film forming apparatus. More particularly, the present invention relates to a deposition film forming apparatus capable of supplying a uniform gas to each rotary member by a gas circulating flow path.

Description of the Related Art [0002] Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light and have been widely used as light sources for display images of electronic devices including information communication equipment. In particular, unlike conventional lighting such as incandescent lamps and fluorescent lamps, it has been known that energy efficiency can be reduced up to 90% by converting electric energy into light energy. Thus, it is widely known that the device can replace fluorescent lamps or incandescent lamps .

The manufacturing process of such an LED element can roughly be divided into an epi process, a chip process, and a package process. The epitaxial process refers to a process for epitaxially growing a compound semiconductor on a substrate, and the chip process refers to a process for producing an epitaxial chip by forming an electrode on each part of a substrate on which epitaxial growth is performed. Refers to a process of connecting a lead to a manufactured epi chip and packaging the LED so that light is emitted to the outside as much as possible.

Among these processes, the epi process is the most critical process for determining the luminous efficiency of an LED device. This is because, when the compound semiconductor is not epitaxially grown on the substrate, defects are generated inside the crystal, and such defects act as a nonradiative center to lower the luminous efficiency of the LED device.

Liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), chemical vapor deposition (CVD), or the like are used for the epitaxial process, that is, a process for forming an epitaxial layer on a substrate. Among them, Metal-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE) is mainly used.

When an epitaxial layer is formed on a plurality of substrates by using the conventional MOCVD method and the HVPE method, a process gas for substrate processing is usually supplied inside the chamber. In order to improve the uniformity of the process, it is preferable that the substrate support portion on which the plurality of substrates are mounted is rotated (or revolved), and that each of the plurality of substrates also rotates on the substrate support portion.

However, in the conventional evaporation film forming apparatus, it is difficult to constitute the substrate support portion to rotate so that the plurality of substrates rotate. Further, it has been difficult to make the speed at which the plurality of substrates rotate on the substrate support unit constant. If the speed at which each substrate rotates is different, there is a possibility that the growth thickness of the evaporation film differs from substrate to substrate.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a deposition film forming apparatus capable of controlling the rotation of a substrate by a rotating member included in each of a plurality of substrate supporting portions.

It is another object of the present invention to provide a vapor deposition film forming apparatus which maintains the rotational speed of a rotating member at the same level, thereby improving the uniformity of the vapor deposition film between a plurality of substrates.

According to an embodiment of the present invention, there is provided a plasma processing apparatus including a plurality of substrate supporting portions, a plurality of rotating members for rotating each of a plurality of substrates are disposed on each of the substrate supporting portions, A gas circulation flow path is formed in such a manner that a flat cross section of the gas circulation flow path is formed so as to circulate the predetermined gas, And a plurality of gas branch channels are branched from the circulation channel to supply the predetermined gas to each of the rotating members.

According to the present invention, it is possible to control the rotation of the substrate by the rotating member included in each of the plurality of substrate supporting portions.

Further, according to the present invention, there is an effect that the uniformity of the deposition film between a plurality of substrates can be improved by keeping the rotation speed of the rotation member at the same.

1 is a view showing a configuration of an apparatus for forming a deposited film according to an embodiment of the present invention.
2 is a plan view showing a configuration of a substrate supporting part according to an embodiment of the present invention.
3 is a vertical cross-sectional view illustrating the structure of a substrate supporting unit according to an embodiment of the present invention.
4 is a plan view showing a configuration in which a rotary member and a cover are removed from a substrate support according to an embodiment of the present invention.
Figure 5 is a perspective view of Figure 4 from another angle.
6 is a plan view showing a configuration in which a rotary member and a cover are removed from a substrate supporting portion of the prior art.
Fig. 7 is a perspective view of Fig. 6 taken at different angles.
8 is a perspective view illustrating a structure in which a rotary member and a cover are removed from a substrate support according to another embodiment of the present invention.
FIG. 9 is a view showing a partial structure of a deposition-film forming apparatus according to an embodiment of the present invention.
10 is an enlarged view of a portion "A" in Fig.
11 is a view showing a configuration of a first support unit according to an embodiment of the present invention.
12 is a view showing a part of a substrate supporting part according to another embodiment of the present invention.
13 is a view illustrating a coupling structure between a connection tube and a substrate support according to another embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several views.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings.

1 is a view showing a configuration of an apparatus for forming a deposited film according to an embodiment of the present invention.

First, the size and material of the substrate (not shown) loaded in the deposition film forming apparatus 10 are not particularly limited, and substrates of various materials such as glass, plastic, polymer, silicon wafer, stainless steel, and sapphire can be loaded . Hereinafter, a circular sapphire substrate generally used in the light emitting diode field will be described on the assumption.

The deposition film forming apparatus 10 according to an embodiment of the present invention may include a chamber 20. The chamber 20 may function to provide a space for forming a deposition film on the plurality of substrates so that the inner space is substantially enclosed while the process is performed. Such a chamber 20 is configured to maintain optimal process conditions, and the shape may be manufactured in the form of a square or a circle. The material of the chamber 20 is preferably made of quartz glass, but is not limited thereto.

Generally, a process for forming a vapor deposition film on a substrate is performed by supplying the vapor deposition material into the chamber 20 and heating the inside of the chamber 20 to a predetermined temperature (for example, about 800 ° C. to 1,200 ° C.). The supplied evaporation material is supplied to the substrate to be involved in the formation of the evaporation film.

The deposition film forming apparatus 10 according to an embodiment of the present invention may include a heater (not shown). The heater may be installed outside the chamber 20 to apply heat to a plurality of substrates in a deposition process. The heater can heat the substrate to a temperature of about 1,200 DEG C or more so that a smooth deposition film can be grown on the substrate.

The deposition film forming apparatus 10 according to an embodiment of the present invention may be configured to include a substrate supporting unit 30. It is preferable that the substrate supporting portions 30 are composed of a plurality of layers and arranged in layers. When a plurality of the substrate supporting portions 30 are formed as described above, the plurality of substrate supporting portions 30 may be arranged and fixed to each other by a gap holding member (not shown). The number of the substrate supporting portions 30 can be variously changed according to the purpose in which the present invention is used. The substrate supporting portion 30 and the gap holding member are preferably made of quartz glass, but are not limited thereto.

Further, a plurality of rotary members 31 (see FIG. 2) may be provided on the substrate supporting portion 30. The number of the rotary members 31 provided on each of the substrate supporting portions 30 is preferably equal to the number of the substrate 5 (see FIG. 2) disposed on each of the substrate supporting portions 30, but is not limited thereto . In order to uniformly supply the substrate processing gas to the substrate 5, the rotating member 31 may have a function of rotating the substrate 5. The detailed configuration will be described later.

The deposition film forming apparatus 10 according to an embodiment of the present invention may include a process gas supply unit 40. The process gas supply unit 40 may perform a function of supplying a substrate process gas necessary for forming a deposition film into the chamber 20. [ In the present specification, it is described that the process gas supply unit 40 is disposed at the center of the chamber 20, but it is not limited thereto.

The deposition film forming apparatus 10 according to an embodiment of the present invention may include a first support portion 60. The first support part 60 may be installed under the chamber 20 to support the plurality of substrate supporting parts 30 during the deposition process. In addition, the first support portion 60 can be rotated by a separate rotating device (not shown) to perform the function of inducing revolving of the plurality of substrate supporting portions 30. [

The deposition film forming apparatus 10 according to an embodiment of the present invention may include a second support portion 70. The second support portion 70 may be disposed at the lower portion of the chamber 20 together with the first support portion 60 and may be configured to surround the outer periphery of the first support portion 60. In addition, the second support portion 70 may be provided so as to be fixed with respect to the chamber 20 separately from the rotation of the first support portion 60.

Hereinafter, the structure of the substrate supporting unit 30 according to an embodiment of the present invention will be described more specifically.

FIG. 2 is a plan view showing a configuration of a substrate supporting unit 30 according to an embodiment of the present invention, and FIG. 3 is a vertical sectional view showing a configuration of a substrate supporting unit 30 according to an embodiment of the present invention.

Referring to FIGS. 2 and 3, the substrate support 30 according to an embodiment of the present invention may include a plurality of rotary members 31 on which a plurality of substrates 5 can be placed. The rotary member 31 may have a shape corresponding to the shape of the substrate 5, for example, a circular shape. Each of the plurality of rotary members 31 may be rotated in a gas-foil manner on the substrate support 30. [ Although the number of the substrates 5 to be mounted on the substrate supporting portion 30 is six in this embodiment, the number of the substrates 5 to be mounted on the substrate supporting portion 30 can be increased or reduced. Do.

A separate cover 32 may be covered on the portion of the substrate supporting portion 30 other than where the rotary member 31 is disposed. The rotary member 31 and the cover 32 can be provided so that the height of the upper surface of the rotary member 31 and the height of the upper surface of the cover 32 are substantially equal to each other.

FIG. 4 is a plan view showing a configuration in which a rotary member 31 and a cover 32 are removed from a substrate support 30 according to an embodiment of the present invention, and FIG. 5 is a perspective view of FIG. 4 from another angle. 6 is a plan view showing a configuration in which the rotary member 31 and the cover 32 are removed from the substrate support 30 of the prior art, and Fig. 7 is a perspective view of Fig. 6 from another angle.

4 and 5, a gas supply passage 51, a gas circulation passage 55, a gas branch passage 57, and a groove (not shown) in which a predetermined gas is supplied are provided in the substrate support 30 of the present invention 37 will be described.

4 and 5, a rotation member accommodating portion 36 corresponding to the rotation member 31 may be defined at a position where the rotation member 31 is disposed in the substrate supporting portion 30, A groove 37 may be formed on the groove 36.

A predetermined gas (for example, N 2 gas) can flow through the groove 37. A predetermined gas is supplied from the gas supply passage 51 and is supplied to the gas circulation passage 55 and the gas branch passage 57 And can be supplied to the groove 37 through the groove gas hole 37a formed at one end of the groove 37. [ The flow of the predetermined gas in the groove 37 can provide a rotational force capable of rotating the rotary member 31.

The shape of the groove 37 can be formed so as to rotate the rotary member 31 in a predetermined direction. For example, it may be formed in a spiral shape in a predetermined direction, but various shapes may be employed within the scope of the object in which the rotary member 31 can be rotated. In addition, the width, depth, number and the like of the groove 37 can be adjusted in order to adjust the number of revolutions of the rotary member 31. 4, the width and the depth of the grooves 37 are shown to be the same depending on the direction in which the predetermined gas flows. However, the width and the depth of the grooves 37 continuously vary depending on the direction in which the predetermined gas flows It is possible. For example, the width of the groove 37 may be gradually narrowed in accordance with the direction in which a predetermined gas flows, and the depth of the groove 37 may become shallower.

A gas supply passage 51 for receiving a predetermined gas may be formed on a part of the substrate supporting part 300. 4 and 5 show a configuration in which the gas supply passages 51 are formed at equal intervals in three parts, the number of the gas supply passages 51 can be increased or decreased. Although the position where the gas supply passage 51 is formed is shown outside the substrate support portion 30 in the drawing, the present invention is not limited thereto. It is irrelevant to which position it can be formed if the object of the invention can be achieved.

In the present invention, a gas circulation passage 55 is formed in the substrate support 300 so that the flat cross-section has a closed loop shape, so that a predetermined gas can be circulated, and a predetermined gas flows through the gas circulation passage 55, The predetermined gas is supplied to the plurality of gas branching passages 57 branching from the gas circulation passage 55 to supply a predetermined gas to each of the rotary members 31. [

Hereinafter, a conventional configuration of the flow path will be described and a characteristic configuration of the present invention will be described.

6 and 7, first, second, and third flow paths 51 ', 52', and 53 'are formed in a conventional substrate support 30, (31). The predetermined gas supplied from the gas supply unit 80 (see FIG. 9) can be transferred to the second flow path 52 'branched from the first flow path 51' through the first flow path 51 '. Thereafter, the predetermined gas passes through the third flow path 53 'branched from the second flow path 52' and is supplied to the groove 37 through the groove gas hole 37a formed at one end of the groove 37 . The flow of the predetermined gas in the groove 37 can provide a rotational force capable of rotating the rotary member 31.

In the conventional flow path type as described above, the pressure of the gas supplied from the three first flow paths 51 'located on one substrate supporting portion 30 may be different. As a result, the flow of the gas supplied to each of the rotating members 31 becomes different, and the speed at which the rotating members 31 rotate is not the same.

Therefore, the present invention employs a gas circulation flow path 55 having a closed loop shape in a flat cross section, and a predetermined gas supplied from the outside is distributed from one gas circulation flow path 55 to each of the rotation members 31 So as to be able to be used.

4 and 5, the gas circulation passage 55 may be connected to the gas supply passage 51 to supply a predetermined gas. The gas circulating flow path 55 may be formed so that the flat cross section has a closed loop shape. Here, the shape of the closed loop means that the passage through which the gas circulates is a closed loop, and the flow path from the gas circulation passage 55 to the rotary member 31 or other structure is branched, It is not meant to mean. Although the ring-shaped gas circulation passage 55 is shown in the present specification so that the flat cross section has a circular shape, in the range of the purpose of gas circulation, Can be adopted.

The plurality of gas branching flow paths 57 may be formed so as to branch to the respective rotary members 31 along the outer periphery of the gas circulating flow path 55. The number of the gas branch flow paths 57 is preferably the same as the number of the rotary members 31 but may be set to be a multiple of the number of the rotary members 31. [

The predetermined gas that has moved from the gas supply passage 51 to the gas circulation passage 55 can fill the gas circulation passage 55 while circulating the gas circulation passage 55. [ Thereafter, a predetermined gas can be supplied from the gas circulation passage 55 to each gas branch passage 57, and a predetermined gas having passed through the gas branch passage 57 can be supplied to the groove 37.

Even when a predetermined gas is supplied from the plurality of gas supply passages 51, the flow paths are once integrated into one gas circulation passage 55, and a plurality of Since the gas is supplied to the gas branch passage 57, the pressures of the gases supplied to the gas branch passage 51 can be the same. Thus, since the same amount of gas is delivered to the rotary member 31 by the pressure of the same gas to provide the rotational force, all the rotary members 31 can have the same rotational speed, and the thickness uniformity of the evaporation film is greatly improved There is an effect that can be.

The cross-sectional area of the gas circulation passage 55 is preferably larger than the sum of the cross-sectional areas of the plurality of gas branch passages 57, so that the rotational speed between the respective rotary members 31 can be set to be the same.

On the other hand, a predetermined gas is supplied from the gas branch passage 57 to the groove gas hole 37a to be connected to the gas branch passage 57, and a predetermined gas is supplied to the groove gas hole 37a. And may further include a gas circulation flow path 59. Since the second gas circulation passage 59 also has a closed loop shape as the first gas circulation passage 55, the gas can be circulated in the second gas circulation passage 59. Therefore, one gas supplied from the gas branch passage 57 can be distributed from one second gas circulation passage 59 to each of the rotary members 31 (or the groove gas holes 37a) at the same pressure have.

8 is a perspective view showing a configuration in which a rotary member 31 and a cover 32 are removed from a substrate support 30 according to another embodiment of the present invention.

Referring to FIG. 8, in another embodiment of the present invention, the apparatus may further include a third gas circulation passage 56 spaced apart from the inner circumferential surface of the gas circulation passage 55 by a predetermined distance. Since the third gas circulating flow path 56 also has a closed loop shape as the first gas circulating flow path 55, gas can be circulated in the third gas circulating flow path 59.

The third gas circulation flow path 56 is connected to the gas supply flow path 51 to receive a predetermined gas and a plurality of second gas branch flow paths 58 are branched from the third gas circulation flow path 56, A predetermined gas can be supplied to the fuel cell stack 55. 4 and 5, the path through which the gas moves in the substrate supporting portion 30 is the "gas supply passage 51 -> gas circulation passage 55 -> gas branch passage 57" -> the second gas circulation passage 59 (when it further includes the second gas circulation passage 59) -> the groove gas hole 37a -> the rotary member 31 ". However, In the example, the path through which the gas moves in the substrate supporting portion 30 is the "gas supply path 51 -> the third gas circulation path 56 -> the second gas branch path 56 -> the gas circulation path The second gas circulation passage 59 and the second gas circulation passage 59. The groove gas holes 37a and the rotary member 31 are formed in the same manner as the first gas circulation passage 59, " As the gas is circulated in the third gas circulation passage 56 and the gas circulation passage 55 and the gas is supplied along the gas branch passage 57 in a state where the gas is entirely filled in the third gas circulation passage 56 and the gas circulation passage 55, The effect of supplying gas can be further improved.

4 and 5, a protrusion 38 is formed at the center of the rotatable member receiving portion 36 to be engaged with a groove (not shown) formed at the center of the lower surface of the rotary member 31 . The projecting portion 38 is engaged with the groove of the rotary member 31 and a predetermined gas flows on the groove 37 so that the rotary member 31 can rotate about the projecting portion 38.

Hereinafter, the gap forming member 33 will be described with reference to Figs. 3 and 5. Fig. If the cover 32 is brought into close contact with the substrate supporting portion 30, the predetermined gas supplied to the groove 37 for rotating the rotating member 31 can not be smoothly discharged, Which may interfere with the rotation of the rotary member 31. [ Therefore, a plurality of gap forming members 33 may be provided on the substrate supporting portion 30. [ A gap 34 can be formed between the cover 32 and the substrate supporting portion 30 by means of the gap forming member 33 to facilitate the discharge of a predetermined gas. The predetermined gas supplied to the groove 37 for smoothly rotating the rotary member 31 through the gap 34 can be smoothly discharged to the outside so that a turbulent flow is generated below the rotary member 31, The rotation of the rotor can be prevented.

A central through hole 35 may be formed in the center of the substrate supporting portion 30 and the center of the cover 32 so that the gas supplying portion 40 can pass therethrough. The central through hole 35 may include a first central through hole 35 'formed in the substrate support 30 and a second central through hole 35' 'formed in the cover 32. The central through hole 35 Is preferably formed to be slightly larger than the diameter of the process gas supply unit 40.

Hereinafter, a method of supplying a predetermined gas for rotating the rotary member 31 to the substrate supporting portion 30 will be described with reference to Figs. 9 to 11. Fig.

9 is a view showing a part of the constitution of the deposition film forming apparatus 10 according to the embodiment of the present invention.

Referring to FIG. 9, an apparatus 10 for forming a deposited film according to an embodiment of the present invention may include a gas supply unit 80. The gas supply part 80 can supply a predetermined gas (for example, N 2 gas) into the second support part 70 through the gas supply path 81.

An internal supply passage 70a is formed in the second support portion 70 to provide a passage through which a predetermined gas can flow. The predetermined gas flowing in the internal supply passage 70a passes through the internal flow passage 60a in the first support portion 60 connected to the internal supply passage 70a and through the outlet 60e, And flows into the connection passage 54 formed in the housing 50. The connection flow path 54 connects the plurality of substrate supporting portions 30 so that a predetermined gas can be supplied to the best substrate supporting portion 30. [ The gas supply passage 51 is formed in each of the substrate supporting portions 30 so that a predetermined gas can be supplied to the gas circulation passage 55 and the gas branch passage 57 as described above.

10 is an enlarged view of a portion "A" in Fig. The portion "A" is a portion relating to a path through which a predetermined gas flows from the second support portion 70 to the first support portion 60. [ 11 is a view showing a configuration of a first support portion 60 according to an embodiment of the present invention.

10 and 11, a connection portion 60c may be formed on the first support portion 60 between the inner supply passage 70a and the inner passage 60a. The connection portion 60c may be formed in the shape of a concave ring outside the first support portion 60 along the rotation direction of the first support portion 60. [ Therefore, even if the first support portion 60 rotates, a predetermined gas supplied from the inner supply passage 70a can flow into the inner passage 60a inside the first support portion 60. [

An inlet 60d at which the internal flow path 60a starts may be formed at a predetermined position of the connection portion 60c. Since the first support portion 60 is rotatable, the position of the inlet 60d can also be rotated. The predetermined gas discharged from the internal flow path 60a flows along the concave ring-shaped connecting portion 60c and flows into the inlet 60d while the internal gas supply passage 70a and the inlet 60d do not match with each other. . The sealing member 65 may be disposed along the upper and lower portions of the connection portion 60c to prevent a predetermined gas from leaking to the outside between the first support portion 60 and the second support portion 70. [

According to another embodiment of the present invention, a coupling structure between a connection tube 50 and a substrate support 30 for preventing leakage of a predetermined gas between the connection tube 50 and the substrate support 30 is proposed. FIG. 12 is a view showing a part of a substrate supporting part according to another embodiment of the present invention, and FIG. 13 is a view showing a coupling structure between a connecting tube and a substrate supporting part according to another embodiment of the present invention.

12 and 13, a concave / convex coupling member 39 is formed around a portion 51a of the substrate support 30, which is coupled with the coupling tube 50, that is, a position where the gas supply passage 51 is formed . The coupling member 39 may be composed of a first coupling member 39a formed on the outer side and a second coupling member 39b formed on the inner side and the first coupling member 39a and the second coupling member 39b Ring shape. Corresponding to this, in the end portion of the coupling pipe 50, a configuration having a concavo-convex shape corresponding to the concavo-convex shape of the coupling member 39, that is, the first corresponding coupling member 50a and the second corresponding coupling member 50b are formed . 13, a first corresponding engaging member 50a is provided between the first engaging member 39a and the second engaging member 39b when the coupling tube 50 and the substrate supporter 30 are engaged with each other, And the second corresponding engaging member 50b can be inserted into the second engaging member 39b. That is, the concave-convex shape formed at the end portion of the coupling tube 50 and the concave-convex shape of the coupling member 39 can be fitted to each other and fitted together. The connection between the connection pipe 50 and the substrate support 30 prevents leakage of a predetermined gas between the connection pipe 50 and the substrate support 30. [ That is, the predetermined gas supplied from the connection pipe 50 to the gas supply passage 51 flows from the introduction passage 51a of the gas supply passage 51 through the supply passage 51b to the substrate support portion 30 Leakage can be prevented.

Although the coupling structure of the coupling tube 50 and the substrate supporting portion 30 has been described above, the same coupling structure can be applied when the coupling tube 50 is coupled to the first supporting portion 60. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

10: Deposition film formation apparatus
20: chamber
30:
31: Rotating member
32: cover
33: gap forming member
34: Clearance
36:
38:
39:
40: Process gas supply section
50: Connector
51: gas supply line
55: gas circulation channel
56: Third gas circulation channel
57: Gas branching flow
58: second gas branching flow path
59: second gas circulation channel
60: first support
70: second support portion

Claims (13)

A plurality of substrate supports,
A plurality of rotary members for rotating each of the plurality of substrates are disposed on each of the substrate supporting portions,
Wherein at least a part of the substrate supporting portion is provided with a gas supply passage for receiving a predetermined gas,
A gas circulation channel is formed so as to be connected to the gas supply channel to receive the predetermined gas and to have a flat cross section in the form of a closed loop,
Wherein a plurality of gas branching channels are branched from the gas circulation channel to supply the predetermined gas to each of the rotation members. The method according to claim 1,
Characterized in that each of the rotary members is rotated on the substrate support part by a gas-foil method in which the predetermined gas is supplied to the groove in a state of being placed in a rotary member accommodating part in which the groove is formed Device. 3. The method of claim 2,
Wherein a plurality of grooves are formed in each of the rotary member accommodating portions and the predetermined gas is supplied to each of the grooves through a groove gas hole. The method according to claim 1,
Wherein the plurality of gas supply channels include a plurality of gas supply channels, and each of the gas supply channels is connected to the gas circulation channel. The method according to claim 1,
Wherein the pressure of the predetermined gas supplied from the gas circulation passage to each of the gas branching passages is the same. The method according to claim 1,
Wherein the cross-sectional area of the gas circulation channel is larger than the sum of the cross-sectional areas of the plurality of gas branch channels. The method of claim 3,
And a second gas circulation conduit connected to the gas branch conduit and supplied with the predetermined gas from the gas branch conduit to supply the predetermined gas to the groove gas hole and having a flat cross section in the shape of a closed loop Wherein the vaporized film forming apparatus further comprises: The method according to claim 1,
A third gas circulation channel is further formed so as to be spaced apart from the inner circumferential surface of the gas circulation channel by a predetermined distance and has a flat cross section in the form of a closed loop,
Wherein the third gas circulation channel is connected to the gas supply channel to receive the predetermined gas and a plurality of second gas branch channels are branched from the third gas circulation channel to supply the predetermined gas to the gas circulation channel Wherein the vaporized film forming apparatus further comprises: The method according to claim 1,
A cover is provided on the substrate supporting portion other than the portion where the plurality of rotary members are located,
Wherein a gap is formed between the substrate supporting portion and the cover to discharge the predetermined gas supplied to the rotating member. The method according to claim 1,
Wherein protruding portions are formed in each of a plurality of portions of the substrate supporting portion where the plurality of rotary members are located,
Wherein each of the plurality of rotating members is rotatable about the protrusion. The method according to claim 1,
Further comprising a first support portion and a second support portion for supporting the plurality of substrate supports,
Wherein the first support portion is rotatable together with the plurality of substrate supports,
And the second support portion is fixed. 12. The method of claim 11,
An internal supply passage for transferring the predetermined gas is formed in the second support portion,
An internal flow path for transferring the predetermined gas to the plurality of substrate supporting portions is formed in the first support portion,
Wherein a concave ring-shaped connection portion is formed on a side surface of the first support portion to connect the internal supply passage and the internal flow passage. 13. The method of claim 12,
Wherein at least one connection tube capable of moving the predetermined gas is provided between the first support portion and a substrate support portion positioned at the lowest one of the plurality of substrate support portions and between the adjacent substrate support portions,
Wherein a joining member for preventing the predetermined gas from leaking is formed in a portion of each of the first supporting portions or the plurality of substrate supporting portions which engages with the coupling tube.
KR1020150143332A 2015-10-14 2015-10-14 Deposition Film Forming Apparatus KR20170043802A (en)

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