KR101555021B1 - Batch Type Deposition Film Forming Apparatus - Google Patents

Abstract

The present invention relates to a batch type deposit layer forming apparatus. A batch type deposition layer formation apparatus according to an embodiment of the present invention is a batch type deposition layer formation apparatus for forming a deposition layer on a plurality of substrates, comprising: a chamber for providing a space in which the deposition layer is formed; A heater disposed outside the chamber and applying heat to the plurality of substrates; A substrate support disposed inside the chamber and on which the plurality of substrates are seated; A process gas supply unit disposed in the chamber to penetrate the center of the substrate support and supplying a process gas to the plurality of substrates; A process gas exhaust unit for exhausting the process gas; And a process gas generating unit disposed inside the chamber and reacting the metal in the metal source with the halogen containing gas to generate a first process gas and supplying the first process gas to the process gas supply unit .

Description

[0001] Batch type Deposition Film Forming Apparatus [0002]

The present invention relates to a batch type deposit layer forming apparatus. More particularly, the present invention relates to a batch type deposition layer forming apparatus capable of stably supplying metal halide gas.

Description of the Related Art [0002] Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light and have been widely used as light sources for display images of electronic devices including information communication equipment. In particular, unlike conventional lighting such as incandescent lamps and fluorescent lamps, it has been known that energy efficiency can be reduced up to 90% by converting electric energy into light energy. Thus, it is widely known that the device can replace fluorescent lamps or incandescent lamps .

The manufacturing process of such an LED element can roughly be divided into an epi process, a chip process, and a package process. The epitaxial process refers to a process for epitaxially growing a compound semiconductor on a substrate, and the chip process refers to a process for producing an epitaxial chip by forming an electrode on each portion of a substrate on which epitaxial growth is performed. Refers to a process of connecting a lead to a manufactured epi chip and packaging the LED so that light is emitted to the outside as much as possible.

Among these processes, the epi process is the most critical process for determining the luminous efficiency of an LED device. This is because, when the compound semiconductor is not epitaxially grown on the substrate, defects are generated in the crystal and such defects act as a nonradiative center to lower the luminous efficiency of the LED device.

Liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), chemical vapor deposition (CVD), or the like are used for the epitaxial process, that is, a process for forming an epitaxial layer on a substrate. Among them, Metal-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE) is mainly used.

For such a process, a process gas supply for supplying a process gas necessary for causing a reaction to form an epitaxial layer on a substrate is included in an apparatus for forming an epitaxial layer, Stable supply is most important. In order to form the epitaxial layer, GaCl gas as one of the process gases is supplied through the process gas supply portion, and GaCl has a property of liquefying or condensing below 600 ° C. Therefore, in the conventional epitaxial layer forming apparatus, since the structural process gas supply section is disposed outside the chamber, the temperature of the process gas supply section is maintained at a high temperature There was a difficulty in maintaining. Therefore, there has been a problem that GaCl is liquefied or condensed in the process gas supply section, so that the GaCl gas is not stably supplied into the chamber.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a process gas reaction apparatus capable of stably supplying a supply gas and a batch type epitaxial layer forming apparatus including the same.

In order to achieve the above object, a batch type deposition layer formation apparatus according to an embodiment of the present invention is a batch type deposition layer formation apparatus for forming a deposition layer on a plurality of substrates, ; A heater disposed outside the chamber and applying heat to the plurality of substrates; A substrate support disposed inside the chamber and on which the plurality of substrates are seated; A process gas supply unit disposed in the chamber to penetrate the center of the substrate support and supplying a process gas to the plurality of substrates; A process gas exhaust unit for exhausting the process gas; And a process gas generating unit disposed inside the chamber and reacting the metal in the metal source with the halogen containing gas to generate a first process gas and supplying the first process gas to the process gas supply unit .

According to the present invention, an epitaxial layer can be uniformly formed on a plurality of substrates.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a configuration of a batch type deposition layer forming apparatus according to an embodiment of the present invention; FIG.
2 is a cross-sectional view illustrating a structure of a process gas supply unit according to an embodiment of the present invention.
3 is a cross-sectional view illustrating the structure of a process gas generator according to an embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several views.

[Preferred Embodiment of the Present Invention]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a configuration of a batch type deposition layer forming apparatus according to an embodiment of the present invention; FIG.

First, the material of the substrate 10 to be loaded into the batch type deposition layer forming apparatus is not particularly limited, and substrates 10 of various materials such as glass, plastic, polymer, silicon wafer, stainless steel, and sapphire can be loaded. Hereinafter, a circular sapphire substrate 10 used in the light emitting diode field will be described on the assumption.

Referring to FIG. 1, a batch type deposition apparatus according to an embodiment of the present invention includes a chamber 110. The chamber 110 may function to provide a space for forming a deposition layer (epitaxial layer) on the plurality of substrates 10 so that the inner space is substantially enclosed while the process is performed. Such a chamber 110 is configured to maintain optimal process conditions, and the shape may be manufactured in the form of a square or a circle. The material of the chamber 110 is preferably quartz, but is not limited thereto.

Referring to FIG. 1, a batch type deposit forming apparatus according to an embodiment of the present invention may include a heater 120. The heater 120 may be installed outside the chamber 110 to apply heat to a plurality of substrates 10 in an epitaxial process. The heater 120 can heat the substrate 10 to a temperature of about 1,200 DEG C or more so that smooth epitaxial growth can be achieved on the substrate 10. [

In the present invention, a heating method using a halogen lamp or a resistance heating element may be used to heat the substrate 10, but an induction heating method can be used. Induction heating refers to a method of heating a conductive object such as a metal using electromagnetic induction. In order to use the induction heating method, the heater 120 is composed of a coil-shaped heater 120 capable of induction heating in the chamber 110, and the susceptor 133 installed in the substrate support 131 includes a conductive material . The heating of the substrate 10 using the coil heater 120 is performed by the principle that the susceptor 133 containing the conductive material is heated as a high frequency alternating current is applied from the coil heater 120 to the inside of the chamber 110 ≪ / RTI >

When the substrate 10 is heated by the induction heating method, the constituent elements of the batch type deposition apparatus except for the susceptor 133 may be made of non-conductive material (for example, quartz). Accordingly, since only the susceptor 133 is heated by the coil heater 120, deposition of the evaporation material on other components in the chamber 110 can be minimized.

Referring to FIG. 1, a batch type deposition apparatus according to an embodiment of the present invention may include a lower support 130. The lower support 130 may be installed inside the chamber 110 to support the plurality of substrates 10 during the epitaxial process.

The lower support 130 may be configured to be rotatable within the chamber 110. In order to enable the rotation of the lower support part 130, various known rotation driving means may be employed in the lower support part 130. As the lower support 130 rotates in the chamber 110, the substrate support 131, which is a component of the lower support 130, also rotates, so that the process gas can be supplied to any position of the substrate 10 . As a result, the process gas can be more uniformly supplied onto the plurality of substrates 10.

Referring to FIG. 1, the lower support 130 may include a substrate support 131 on which the substrate 10 is mounted. As shown in the figure, the substrate support 131 is preferably formed in the form of a circular plate for smooth rotation of the lower support part 130, but is not limited thereto.

1, it is preferable that the substrate supports 131 are arranged in a plurality of layers. In this case, the substrate supports 131 of a plurality of layers can be connected and fixed to each other by the connection member 132. [ In FIG. 1, the substrate support 131 is shown to have six layers, but the present invention is not limited thereto. The number of layers of the substrate support 131 may be variously changed according to the purpose in which the present invention is used. The material of the substrate support 131 is preferably quartz, but is not limited thereto.

As will be described later, in the present invention, the process gas supply unit 140 supplies the process gas in a state where the process gas supply unit 140 passes through the center of the substrate support 131 of the lower support unit 130. In this case, as the process gas is supplied from the central portion of the substrate support 131, the process gas may be supplied to a position on the substrate 10 close to the central portion of the substrate support 131. In order to solve this problem, the plurality of substrates 10 mounted on the substrate support 131 can be independently rotated. In other words, while the epitaxial process is being performed, each substrate 10 may be rotated in the horizontal direction with respect to the substrate support 131, but rotated at different rotation speeds or in different rotation directions. Independent rotation of the substrate 10 can be achieved by rotation of the susceptor 133 on which the substrate 10 is placed. As the substrate 10 rotates independently, the process gas can be uniformly supplied onto the plurality of substrates 10.

Referring to FIG. 1, a plurality of susceptors 133 may be provided on each substrate support 131. The susceptor 133 may perform a function of supporting the substrate 10 during the epitaxial process to prevent the substrate 10 from being deformed. The number of the susceptors 133 provided in each of the substrate supports 131 may be the same as the number of the substrates 10 disposed in each of the substrate supports 131. [

The susceptor 133 may perform the function of heating the substrate 10 together with the coil heater 120 as described above in addition to the function of preventing deformation of the substrate 10. [ For this, the material of the susceptor 133 may include a conductive material such as amorphous carbon, diamondlike carbon, glasslike carbon and the like, but preferably graphite (Graphite). The graphite is not only excellent in strength but also excellent in conductivity and can be suitable for being heated by an induction heating method. Thus, when the susceptor 133 is made of graphite, the surface of the graphite can be coated with silicon carbide (SiC). Since silicon carbide has excellent high temperature strength and hardness and has a high thermal conductivity, it is possible to prevent dispersion of graphite molecules during heating, and to facilitate heat transfer to the substrate 10.

The susceptor 133 may perform functions to prevent the substrate 10 from being deformed and to heat the substrate 10 and to rotate the substrate 10 as described above. Various known rotation driving means may be employed for the susceptor 133 for this purpose. In addition, the susceptor 133 preferably has a disc shape for smooth rotation, but it is not limited thereto and may have various shapes according to the purpose of the present invention.

Referring to FIG. 1, a batch type deposition apparatus according to an embodiment of the present invention may include a process gas supply unit 140. The process gas supply unit 140 may perform a function of supplying the process gas necessary for forming the epitaxial layer into the chamber 110. [

As shown in FIG. 1, in the present invention, the process gas supply unit 140 is disposed so as to pass through the center of the substrate support 131. In other words, the process gas supply unit 140 is disposed so as to pass through the through hole 135 formed at the center of the substrate support 131, so that a plurality of process gas supply units 140 are supported from the center of the substrate support 131 by the substrate support 131 And the process gas is supplied toward the substrate 10. By adopting such a configuration, the present invention can uniformly supply the process gas onto the plurality of substrates 10, and thus it is possible to form an epitaxial layer having the same quality and standard on the plurality of substrates 10. [

In addition, the process gas supply unit 140 may be rotated during the epitaxial process. Various known rotation driving means for rotating the process gas supply unit 140 may be employed in the process gas supply unit 140. Thus, it is possible to prevent the process gas from being supplied to any position of the substrate 10 in a biased manner similar to the rotation of the lower support portion 130. As a result, the process gas can be more uniformly supplied onto the plurality of substrates 10.

Hereinafter, the structure of the process gas supply unit 140 used in the batch type deposition layer forming apparatus 100 according to an embodiment of the present invention will be described in detail.

2 is a cross-sectional view illustrating a structure of a process gas supply unit 140 according to an embodiment of the present invention.

Referring to FIG. 2, the process gas supply unit 140 may have a multi-pipe structure including a first inner pipe 142 and a second inner pipe 147 in an outer pipe 141. Although the number of the first inner tubes 142 is four in the present embodiment, the number of the first inner tubes 142 is not limited to four, but may be variously changed depending on the purpose and the situation. The process gas supply unit 140 may include a plurality of gas injection ports 143 and 145. The plurality of gas injection openings 143 and 145 can perform the function of injecting the first and second process gases. The positions of the plurality of gas injection ports 143 and 145 may be formed to correspond to the positions of the respective substrate supports 131. The number of gas ejection openings is not particularly limited and can be variously changed according to the purpose of use of the present invention.

The plurality of gas injection openings 143 and 145 are connected to the plurality of first gas injection openings 143 connected to the first inner pipe 142 of the process gas supply unit 140 and the outer pipe 141 of the process gas supply unit 140 And a plurality of second gas ejection openings 145 are formed. In this embodiment, the first gas injection port 143 may be a nozzle formed on the outer wall of the first inner tube 142, and may inject the process gas in the hole formed in the end of the nozzle. The first gas injection port 143 can pass through the hole 144 formed in the outer tube 141 and the end of the first gas injection port 143 through which the process gas is injected can be exposed to the outside of the outer tube 141 have. The second gas injection port 145 is a hole formed in the outer tube 141 and is formed in a space defined by the first inner tube 142 and the second inner tube 147 of the outer tube 141 via the second gas injection port 145. [ The process gas supplied to the inner space 146 may be ejected to the outside. However, the shapes of the first and second gas injection openings 143 and 145 are not limited thereto, and various modifications are possible.

On the other hand, the process gas supplied onto the plurality of substrates 10 may be variously changed depending on the type of the epitaxial layer to be formed on the substrate 10 or the formation method thereof. For example, TMG (trimethylgallium), TEG (triethylgallium), NH3 gas, or the like can be used as a process gas in order to form an epitaxial gallium nitride (GaN) layer on a plurality of substrates 10 by MOCVD have. In order to form an epitaxial gallium nitride (GaN) layer on the plurality of substrates 10 using the HVPE method, GaCl, NH 3, and H 2 gas generated by the reaction of the Ga metal with the HCl gas are used as the process gas .

The process gas supply unit 140 used in the batch type deposition apparatus according to an embodiment of the present invention may include a process gas injected from the first gas injection hole 143 and a process gas injected from the second gas injection hole 145 It is preferable to make them different. For example, in order to form an epitaxial gallium nitride layer on a plurality of substrates 10 using the MOCVD method, TMG gas or TEG gas is sprayed from the first gas injection port 143, and the second gas injection port 145 ), NH3 gas can be injected. According to the process gas supply unit 140 of the present invention, since each of the plurality of process gases is injected through the first gas injection port 143 and the second gas injection port 145, the process gas is supplied to the pre- 140 to prevent the evaporation material from being deposited on the inner wall of the process gas supply unit 140.

The second inner pipe 147 is located at the center of the outer pipe 141 and is for supplying a halogen-containing gas (for example, HCl) to the process gas generating unit 160 to be described later.

Referring to FIG. 1, a batch type deposition apparatus according to an embodiment of the present invention may include a process gas discharge unit 150. The process gas exhaust unit 150 may function to exhaust the process gas to the outside of the chamber 110. The process gas exhaust unit 150 may be formed in a cylindrical shape surrounding the periphery of the plurality of substrate supports 131. A plurality of exhaust ports 155 for exhausting the process gas may be formed at a height corresponding to each of the substrate supports 131 in the process gas exhaust unit 150. The exhaust port 155 may be formed in a slit shape, but the shape of the exhaust port 155 is not limited thereto. In addition, the number of the exhaust ports 155 can be variously changed according to the purpose in which the present invention is used.

 Suction means capable of sucking the process gas is connected to the outside of the process gas exhaust unit 150, and the process gas can be exhausted to the outside through the exhaust port 155. The exhaust port 155 is preferably located near the substrate support 131. By adopting such a configuration, a flow of the process gas, that is, a process gas injected from the first and second gas injection openings 143 and 145, flows into the exhaust port 155 without circulating inside the chamber 110 It is possible to minimize the supply of the process gas to the substrate 10 in excess of the amount required for the process. As a result, the process gas can be more uniformly supplied onto the plurality of substrates 10. The exhaust ports 155 are desirably arranged at regular intervals from each other in the horizontal direction for uniform flow of the process gas.

Referring to FIG. 1, a batch type deposition apparatus according to an embodiment of the present invention may include a process gas generator 160. The process gas generating unit 160 may be formed inside the chamber 110, and may be located at an upper portion of the chamber 110. Therefore, the metal halogen gas generated in the process gas generating unit 160 can be supplied downward from the top of the process gas supply unit 140. In the process gas generator 160, a metal source (for example, a Ga source) and a halogen containing gas (for example, HCl) react to generate a metal halide gas (for example, GaCl) . The generated metal halide gas is supplied to the process gas supply unit 140. The specific configuration of the process gas generator 160 will be described later.

Referring to FIG. 1, a batch type deposit forming apparatus according to an embodiment of the present invention may include a baffle unit 170. The baffle portion 170 is located at a lower portion of the substrate support 131 and can prevent heat generated in the chamber 110 from flowing out to the outside, Can be blocked.

Referring to FIG. 1, the batch type deposit forming apparatus according to an embodiment of the present invention may be configured such that the rotation unit 180 is positioned. The rotation unit 180 enables the rotation of the process gas supply unit 140 and may be located below the process gas supply unit 140.

3 is a cross-sectional view illustrating the structure of a process gas generator 160 according to an embodiment of the present invention.

Referring to FIG. 3, the process gas generating unit 160 is connected to an inlet path 161 through which a halogen-containing gas such as HCl supplied from the second inner pipe 147 passes, a halogen-containing gas supplied from the inlet path 161, A metal source 163 containing a metal source 163 that reacts with the halogen-containing gas that has passed through the first communication portion 162a, the second communication portion 162b connected to the first communication portion 162a, and the second communication portion 162b, And a discharge passage 164 for supplying the metal halide gas generated by the reaction of the halogen containing gas and the metal source 163 to the first inner pipe 142. [

The halogen-containing gas supplied upward through the second inner pipe 147 of the supply gas supply unit 140 may be supplied into the process gas generating unit 160 through the inflow path 161. The halogen-containing gas supplied into the process gas generating unit 160 may be supplied to the metal source 163 through the first communication unit 162a and the second communication unit 162b. The metal source 163 may be, for example, a Ga source. The first gas communication part 162a and the second communication part 162b are connected to the supply gas generating part 160 through the inflow path 161 located at the center of the supply gas generating part 160, A halogen-containing gas may flow along the outer periphery of the generation section 160 to reach the metal source 163. [ With this configuration, the area and time at which the halogen-containing gas contacts the metal source 163 can be increased, as compared with the case where the halogen-containing gas contacts the metal source 163 immediately after the halogen-containing gas enters the inflow channel 161. Thus, according to one embodiment of the present invention, the probability that the halogen containing gas reacts with the metal in the metal source 163 to become a metal halogen gas can be increased. Since the metal source 163 is located inside the chamber 110 maintained at a high temperature by the heater 120, it is not necessary to use a separate heater to maintain the temperature for the halogen-containing gas to react with the metal, Temperature control is easy.

The halogen containing gas supplied to the metal source 163 reacts with the metal contained in the metal source 163 to generate a metal halide gas and the generated metal halide gas is introduced into the first inner pipe 142 through the discharge passage 164, As shown in FIG. The halogen-containing gas flowing along the outer periphery of the process gas generating section 160 reacts with the metal source 163 to form the first inner pipe 142 located at the center of the supply gas generating section 160 An exhaust passage 164 may be formed in the feed gas generating portion 160 so that the exhaust gas may flow toward the exhaust gas generating portion 160. Since the discharge passage 164 for supplying the metal halogen gas to the process gas supply unit 140 is located inside the chamber 110, it is possible to prevent the metal halogen gas from liquefying or condensing in the discharge passage 164. The metal halide gas supplied to the first inner tube 142 may be sprayed on the plurality of substrates 10 through the first gas injection port 143 while descending through the first inner tube 142.

The block 165 is disposed in the supply gas generating unit 160 to form the inflow channel 161, the first communication unit 162a, the second communication unit 162b, and the discharge channel 164 . That is, the block 165 may be disposed within the feed gas generator 160 such that a gap is formed between the inner surface of the feed gas generator 160 and the block 165, The first communicating portion 162a, the second communicating portion 162b, and the discharge passage 164, as shown in FIG.

According to the present invention, a metal source 163 for generating a metal halide gas and a discharge passage 164 for supplying a metal halogen gas to the process gas supply unit 140 may be located inside the chamber 110. Therefore, unlike the conventional evaporation layer forming apparatus in which the element for supplying the metal halogen gas is located outside the chamber, it is not necessary to separately provide a heater for maintaining the reaction temperature of the metal source 163, 163 can be easily controlled and the metal halide gas flowing along the discharge path 164 can be prevented from being liquefied or condensed at a low temperature. Therefore, the metal halide gas can be stably supplied to the process gas supply unit 140.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

110: chamber
120: heater
130:
140: Process gas supply section
150: Process gas exhaust part
160: Process gas generating unit

Claims (11)

A batch type deposition layer forming apparatus for forming a deposition layer on a plurality of substrates,
A chamber for providing a space in which the deposition layer is formed;
A heater disposed outside the chamber and applying heat to the plurality of substrates;
A substrate support disposed within the chamber and on which the plurality of substrates are seated;
A process gas supply unit arranged to penetrate through the center of the substrate support in the chamber and supply a process gas to the plurality of substrates;
A process gas exhaust unit surrounding the substrate support and exhausting the process gas; And
A process gas supply unit disposed in the upper portion of the process gas supply unit in the chamber for generating a first process gas by reacting a metal in the metal source with a halogen containing gas and supplying the first process gas to the process gas supply unit,
Wherein the deposition-layer-forming apparatus comprises: delete The method according to claim 1,
Wherein the process gas supply unit includes a first inner pipe and a second inner pipe in an outer appearance of the process gas supply unit,
Wherein the halogen-containing gas to be supplied to the process gas generating section flows toward the process gas generating section and the first process gas supplied from the process gas generating section flows into the first inner pipe, The deposition-type deposition layer forming apparatus comprising: The method of claim 3,
Wherein the process gas generator comprises:
An inlet path through which the halogen-containing gas flowing into the second inner pipe flows into the process gas generating section;
A communication unit for introducing the halogen-containing gas introduced through the inflow path to a metal source;
A metal source storage for storing the metal source; And
And a discharge gas for discharging the first process gas generated by the reaction of the halogen-containing gas and the metal in the metal source to the first inner pipe
Wherein the deposition-layer-forming apparatus comprises: 5. The method of claim 4,
Wherein the communication portion is formed so that the halogen-containing gas introduced from the inflow path flows along the outer periphery of the process gas generating portion to reach the metal source. 6. The method of claim 5,
Wherein the block is disposed in the process gas generating section to form the inlet passage, the communication section, and the discharge passage. The method of claim 3,
Wherein the process gas supply unit is provided with a first gas injection port for injecting the first process gas supplied through the first inner pipe and a space excluding a space occupied by the first inner pipe and the second inner pipe among the outer pipes And a second gas ejection port for ejecting the second process gas. 8. The method of claim 7,
Wherein the first gas injection hole is in the form of a nozzle formed on an outer wall of the first inner pipe and passes through a hole formed in the outer pipe, and an end of the first gas injection hole is exposed to the outside of the outer pipe. . 8. The method of claim 7,
And the second gas injection hole is in the shape of a hole formed in the outer tube. 8. The method of claim 7,
Wherein the first process gas and the second process gas are different from each other in type. The method of claim 3,
Wherein the first inner tube has a plurality of first inner tubes.

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