TW201442072A - Batch type deposition film forming apparatus - Google Patents

Abstract

The present invention relates to a batch deposition apparatus. According to an embodiment of the present invention, which includes: a chamber for providing a space for depositing a layer on a plurality of substrates; a heater arranged on the outside of the chamber for heating the plurality of substrates; a substrate support arranged on the inside of the chamber for supporting the plurality of substrates; a process gas supply part arranged on the inside of the chamber through the center of the substrate support for supplying a process gas to the plurality of substrates; an exhaust gas part for discharging the process gas; and a process gas generation part arranged on the inside of the chamber for providing the process gas supply part with a first process gas generated by reacting a metal of a metal source with a gas containing a halogen.

Description

Batch deposition film forming device Field of invention

The present invention relates to a batch deposition film forming apparatus. More specifically, it relates to a batch deposition film forming apparatus capable of stably supplying a metal halogen gas.

Background of the invention

A light-emitting diode (LED) is a semiconductor light-emitting element that converts a current into light, and is widely used as a light source for display images of an electronic device including an information communication device. In particular, unlike conventional lighting such as incandescent lamps and fluorescent lamps, the efficiency of converting electrical energy into light energy is high, and it is known that it can reduce energy by up to 90%, and is widely used as an element capable of replacing fluorescent lamps and incandescent electric balls. Received attention.

The manufacturing steps of such an LED element can be roughly divided into an epitaxial step, a grain step, and a packaging step. The epitaxial step refers to a step of epitaxial growth of a compound semiconductor on a substrate; the graining step refers to a step of forming an epitaxial crystal grain by forming an electrode on each portion of the epitaxially grown substrate; the encapsulating step means The thus-prepared epitaxial grain bonding wire (Lead) is packaged so that the light is radiated to the outside as much as possible. The steps.

Among such steps, the epitaxial step can be said to be the core step of determining the luminous efficiency of the LED element. This is because when the compound semiconductor is not epitaxially grown on the substrate, defects are generated inside the crystal and such defects act in a nonradiative center, resulting in a low luminous efficiency of the LED element.

In this epitaxial step, even if the epitaxial layer is formed on the substrate, LPE (Liquid Phase Epitaxy), VPE (Vapor Phase Epitaxy), MBE (Molecular Beam Lei) can be used. Molecular Beam Epitaxy), CVD (Chemical Vapor Deposition) method, etc., in particular, mainly using Metal-Organic Chemical Vapor Deposition (MOCVD) or hydride gas phase Hydride Vapor Phase Epitaxy (HVPE).

In order to perform such a step, the apparatus for forming an epitaxial layer includes a process gas supply unit for supplying a process gas necessary for a reaction for forming an epitaxial layer on the substrate to the substrate. The process gas supply unit is capable of stably supplying the process gas system most importantly. In order to form the epitaxial layer, GaCl gas, which is one of the process gases, is supplied through the process gas supply unit, but when GaCl is at 600 ° C or lower, it has a property of causing liquefaction or condensation. Therefore, the temperature of the process gas supply portion to which GaCl is supplied must be maintained at a high temperature of more than 600 ° C. However, since the prior epitaxial layer forming device is configured to dispose the process gas supply portion outside the chamber, the process will be performed. The temperature of the gas supply unit is maintained at High temperature is difficult. Therefore, there is a problem that GaCl is liquefied or condensed in the process gas supply portion, so that the GaCl gas cannot be stably supplied into the chamber.

Summary of invention

The present invention has been made to solve various problems of the prior art described above, and an object thereof is to provide a batch type epitaxial layer forming apparatus capable of stably supplying a supply gas.

In order to achieve the above object, a batch deposition film forming apparatus according to an embodiment of the present invention is for forming a deposited film on a plurality of substrates; characterized by comprising: a chamber for providing a space for forming the deposited film; and heating Arranging on the outside of the chamber to apply heat to a plurality of substrates; the substrate support is disposed inside the chamber to mount the plurality of substrates; and the process gas supply portion is inserted through the center of the substrate support Disposed on the inner side of the chamber to supply a process gas to the plurality of substrates; the process gas exhaust unit to exhaust the process gas; and the process gas generating unit disposed inside the chamber to make a metal source The inner metal reacts with the halogen-containing gas to generate the first process gas, and the first process gas is supplied to the process gas supply unit.

According to the present invention, an epitaxial layer can be uniformly formed on a plurality of substrates.

10‧‧‧Substrate

110‧‧‧ chamber

120‧‧‧heater

130‧‧‧lower support

131‧‧‧Substrate support

132‧‧‧Connected components

133‧‧‧Loader

135‧‧‧through holes

140‧‧‧Process Gas Supply Department

141‧‧‧External management

142‧‧‧1st inner tube

143‧‧‧1st gas injection port

144‧‧‧ holes

145‧‧‧2nd gas injection port

146‧‧‧ In addition to the first inner tube and the outer tube 2 internal space outside the space occupied by the inner tube

147‧‧‧2nd inner tube

150‧‧‧Process gas exhaust

155‧‧‧Exhaust port

160‧‧‧Process Gas Generation Department

161‧‧‧Inflow path

162a‧‧‧1st dredge

162b‧‧‧2nd dredge

163‧‧‧Metal source

164‧‧‧Drainage path

165‧‧‧ bearing block

166‧‧‧Metal source storage

170‧‧‧Baffle Department

180‧‧‧Rotating Department

Fig. 1 is a view showing the configuration of a batch type deposited film forming apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the structure of a process gas supply unit according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view showing the structure of a process gas generating unit according to an embodiment of the present invention.

Form for implementing the invention

The detailed description of the present invention described below will be described with reference to the specific embodiments of the present invention. These embodiments are described in sufficient detail in the manner in which the present invention can carry out the invention. The various embodiments of the present invention are different from each other, but it must be understood that there is no need for mutual exclusion. For example, the specific shapes, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention. In addition, it is to be understood that the position and arrangement of the individual components of the embodiments disclosed herein can be changed without departing from the spirit and scope of the invention. Therefore, the detailed description is not to be construed as limiting the scope of the invention, and the scope of the present invention is defined by the scope of the claims and the scope of the claims. In the drawings, various aspects are referred to in the like or the like.

Implementation form

Hereinafter, the present invention will be described in detail with reference to the attached drawings. Composition.

Fig. 1 is a view showing the configuration of a batch type deposited film forming apparatus according to an embodiment of the present invention.

First, the material of the substrate 10 to be mounted on the batch deposition film forming apparatus is not particularly limited, and a substrate 10 of various materials such as glass, plastic, polymer, germanium wafer, stainless steel, or sapphire can be mounted. Hereinafter, a circular sapphire substrate 10 used in the field of light-emitting diodes will be described.

Referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention includes a chamber 110. The chamber 110 is configured such that substantially the internal space is sealed during the step, and it is possible to provide a space for forming a space for depositing a thin film (epitaxial layer) on the plurality of substrates 10. Such a chamber 110 is constructed to maintain optimal process conditions, and the form can be manufactured in a quadrangular or circular shape. The material of the chamber 110 is preferably quartz, but is not necessarily limited thereto.

Further, referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a heater 120. The heater 120 is provided outside the chamber 110 and can function to apply heat necessary for the majority of the substrate 10 to the epitaxial step. In order to perform smooth epitaxial growth on the substrate 10, the heater 120 can be heated until the substrate 10 is heated to a temperature of about 1,200 ° C or higher.

In the present invention, in order to heat the substrate 10, a heating method using a halogen lamp or a resistive heating element can be used, but it is preferable to use an induction heating method. The so-called induction heating method refers to The use of electromagnetic induction to heat a conductive object such as a metal. In order to utilize the induction heating method, the heater 120 is formed by using the coil heater 120 capable of induction heating to form the inside of the chamber 110, and the mount 133 provided on the substrate support 131 can be configured to contain a conductive material. The heating of the substrate 10 using the coil heater 120 can be realized by applying a high-frequency alternating current from the coil heater 120 to the inside of the chamber 110 to heat the mount 133 containing the conductive material.

As described above, when the substrate 10 is heated by the induction heating method, the constituent elements of the batch deposition thin film forming apparatus other than the mount 133 can be configured using a non-conductor (for example, quartz). Since the holder 133 is heated only by the coil type heater 120, the structural elements of the remaining portion of the inside of the chamber 110 can be minimized.

Further, referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a lower support portion 130. The lower support portion 130 is provided inside the chamber 110, and the function of supporting the plurality of substrates 10 can be achieved during the epitaxial step.

The lower support portion 130 is rotatably formed within the chamber 110. In order to make the lower support portion 130 rotatable, various types of rotational driving means known in the art can be employed in the lower support portion 130. As the lower support portion 130 rotates in the chamber 110, the substrate support 131 of the constituent elements of the lower support portion 130 also rotates, whereby the process gas can be prevented from being supplied at any position of the substrate 10 with a deviation. As a result, the process gas can be supplied to the plurality of substrates 10 more uniformly.

Referring to FIG. 1 , the lower support portion 130 can include a mounting substrate The substrate support member 101 of 10 is constructed. As shown in the figure, the substrate support 131 is preferably configured in the form of a circular plate for the smooth rotation of the lower support portion 130, but is not necessarily limited thereto.

Further, referring to Fig. 1, the substrate supporting members 131 are preferably arranged in a plurality of layers. In this case, the plurality of substrate supporting members 131 can be connected and fixed to each other by the connecting members 132. In FIG. 1, the substrate support 131 is shown as six layers, but it is not necessarily limited thereto, and the number of layers of the substrate support 131 can be variously changed in accordance with the purpose of the present invention. The material of the substrate support member 131 is preferably quartz, but is not necessarily limited thereto.

As will be described later, in the present invention, the process gas supply unit 140 supplies the process gas while passing through the center of the substrate support 131 of the lower support portion 130. At this time, since the process gas system is supplied from the center portion of the substrate support 131, a position on the substrate 10 close to the center portion of the substrate support 131 is generated, and the process gas is supplied in a large amount. In order to solve such a problem, the plurality of substrates 10 mounted on the substrate support 131 can be rotated independently. That is, while the epitaxial step is being performed, the respective substrates 10 are rotated in the horizontal direction with respect to the substrate support 131, but they are rotatable at mutually different rotational speeds or mutually different rotational directions. The independent rotation of the substrate 10 can be performed by the rotation of the mount 133 placed on the substrate 10. By rotating the substrate 10 independently, the process gas can be uniformly supplied to the plurality of substrates 10.

Referring further to FIG. 1, each of the substrate supports 131 is provided with a plurality of carriers 133. During the epitaxial process, the mount 133 can achieve the function of supporting the substrate 10 to prevent deformation of the substrate 10. On their respective substrates The number of the mounts 133 provided in the support member 131 can be the same as the number of the substrates 10 disposed on the respective substrate supports 131.

The mounter 133 is capable of achieving a function of preventing deformation of the substrate 10, and a function of heating the substrate 10 simultaneously with the coil type heater 120 as mentioned above. Therefore, the material of the mount 133 can contain a conductive material, for example, amorphous carbon, diamondlike carbon, glasslike carbon, or the like, and graphite (Graphite) is preferable. The graphite system is excellent not only in strength but also in electrical conductivity, and is suitable for heating by induction heating. As described above, when the mounter 133 is made of graphite, the surface of the graphite can be coated with tantalum carbide (SiC). Since the cerium carbide is excellent in high-temperature strength and hardness and high in thermal conductivity, it is possible to prevent the graphite molecules from being dispersed even during heating, and it is possible to easily transfer heat to the substrate 10.

The mounter 133 is capable of preventing the deformation of the substrate 10 and the heating function of the substrate 10, and the function of the substrate 10 being able to rotate (rotate) as mentioned above. Therefore, various types of rotational driving means known in the art can be employed in the carrier 133. Further, in order to smoothly rotate, the mounter 133 is preferably a disk having a shape, but is not necessarily limited thereto, and can have various shapes in accordance with the purpose of the present invention.

Further, referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a process gas supply unit 140. The process gas supply unit 140 is capable of supplying a process gas necessary for forming a crystal layer formation inside the chamber 110.

As shown in Fig. 1, in the present invention, its structural features are: The process gas supply unit 140 is disposed to penetrate the center of the substrate support 131. In other words, the process gas supply unit 140 is disposed so as to penetrate through the through hole 135 formed in the center of the substrate support 131, and can be guided toward the substrate support member 131 toward the center portion of the substrate support member 131. A majority of the substrate 10 supported is supplied with process gas. According to this configuration, since the process gas can be uniformly supplied to the plurality of substrates 10 in the present invention, the epitaxial layers having the same quality and specifications can be formed on the plurality of substrates 10.

Further, during the epitaxial process, the process gas supply unit 140 is rotatable. For the rotation of the process gas supply unit 140, various types of rotational driving means known in the art can be employed in the process gas supply unit 140. Thereby, similarly to the rotation of the lower support portion 130, it is possible to prevent the process gas from being supplied at an arbitrary position of each of the substrates 10. As a result, the process gas can be supplied to the plurality of substrates 10 more uniformly.

In the following, the structure of the process gas supply unit 140 used in the batch deposition film forming apparatus 100 according to the embodiment of the present invention will be specifically described.

Fig. 2 is a cross-sectional view showing the structure of a process gas supply unit 140 according to an embodiment of the present invention.

Referring to Fig. 2, the process gas supply unit 140 can be configured as a multi-tube structure composed of a first inner tube 142 and a second inner tube 147 in the outer tube 141. In the present embodiment, the number of the first inner tubes 142 is four, but the number of the first inner tubes 142 is not limited thereto, and can be variously changed in accordance with the purpose and the state of use. The process gas supply unit 140 can contain a majority The gas injection ports 143 and 145 are formed. Most of the gas injection ports 143 and 145 are capable of injecting the first and second process gases. The positions of the plurality of gas injection ports 143, 145 can be formed in a manner corresponding to the positions of the respective substrate supports 131. The number of the gas injection ports is not particularly limited, and can be variously changed in accordance with the purpose of the present invention.

Here, it is considered that the plurality of gas injection ports 143 and 145 include a plurality of first gas injection ports 143 that are connected to the first inner tube 142 of the process gas supply unit 140, and a plurality of second gas injection ports 145. It is connected to the outer tube 141 of the gas supply unit 140. In the present embodiment, the first gas injection port 143 is formed in the form of a nozzle formed on the outer wall of the first inner tube 142, and the process gas can be ejected from the hole formed at the end of the nozzle. The first gas injection port 143 can penetrate the hole 144 formed in the outer tube 141, and the end portion of the first gas injection port 143 that ejects the process gas can be exposed to the outside of the outer tube 141. In addition, the second gas injection port 145 is formed in the form of a hole formed in the outer tube 141, and is supplied to the outer tube 141 via the second gas injection port 145 except for the space occupied by the first inner tube 142 and the second inner tube 147. The process gas of the internal space 146 can be ejected to the outside. However, the form of the first and second gas injection ports 143 and 145 is not limited thereto, and various modifications are possible.

On the other hand, the process gas supplied to the plurality of substrates 10 can be variously changed in accordance with the type of the epitaxial layer to be formed on the substrate 10 or the method of forming the same. For example, in order to form a gallium nitride (GaN) layer on a plurality of substrates 10 by the MOCVD method, TMG (trimethylgallium), TEG (triethylgalliumtriethylgallium), NH3 gas, or the like can be used as a process gas. Further, in order to form an epitaxial gallium nitride (GaN) layer on a plurality of substrates 10 by the HVPE method, GaCl, NH ₃ , H ₂ gas or the like which is formed by reacting Ga metal with HCl gas can be used as a process gas.

The process gas supply unit 140 used in the batch deposition film forming apparatus according to the embodiment of the present invention is a process for ejecting a process gas injected from the first gas injection port 143 and ejecting from the second gas injection port 145. The gases are different from each other. For example, in order to form an epitaxial gallium nitride layer on the plurality of substrates 10 by MOCVD, it is possible to eject the TMG gas or the TEG gas from the first gas injection port 143, and to eject the NH3 gas from the second gas injection port 145. According to the process gas supply unit 140 of the present invention, since a plurality of process gases are respectively ejected through the first gas injection port 143 and the second gas injection port 145, it is possible to prevent the process gas from being supplied to the process gas supply unit 140 before reaching the substrate. The internal reaction causes the deposition material to adhere to the inner wall of the process gas supply portion 140.

The second inner tube 147 is located at a central portion of the outer tube 141 and is provided with a halogen-containing gas (for example, HCl) to the process gas generating unit 160 to be described later.

Referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a process gas exhaust unit 150. The process gas exhaust unit 150 is capable of exhausting the process gas to the outside of the chamber 110. The process gas exhaust portion 150 can be formed in a cylindrical shape surrounding the periphery of the plurality of substrate supports 131. In the process gas exhaust unit 150, a plurality of exhaust ports 155 for exhausting the process gas can be formed in the respective substrate supports 131. The exhaust port 155 can be formed in a slit shape, but its shape is not limited thereto, and the number of the exhaust ports 155 can be The present invention has been changed in various ways for the purpose of utilization.

An intake means capable of sucking the process gas is connected to the outside of the process gas exhaust unit 150, and the process gas can be exhausted to the outside via the exhaust port 155. The exhaust port 155 is preferably located in the vicinity of the substrate support 131. By adopting such a configuration, the process gas injected from the first and second gas injection ports 143 and 145 from the flow of the process gas can be formed so as not to circulate inside the chamber 110 and immediately flow into the exhaust gas. The flow of the port 155 allows the process gas supplied to the substrate 10 to be greater than the amount necessary for the step to be minimized. As a result, the process gas can be more uniformly supplied to the plurality of substrates 10. In order to make the process gas flow uniformly, the exhaust ports 155 are preferably arranged in the horizontal direction while having a certain interval from each other.

Referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a process gas generating unit 160. The process gas generating portion 160 may be formed inside the chamber 110, and preferably located inside the chamber 110. Therefore, the metal halogen gas generated by the process gas generating unit 160 can be supplied downward from the upper end of the process gas supply unit 140. In the process gas generating unit 160, a metal source (for example, a Ga source) is reacted with a halogen-containing gas (for example, HCl) to generate a metal halogen gas (for example, GaCl) which is one of the process gases. The generated metal halogen gas system is supplied to the process gas supply unit 140. The specific configuration of the process gas generating unit 160 will be described later.

Referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured to include a shutter portion 170. The baffle portion 170 is located at a lower portion of the substrate support member 131 and can be interrupted in the chamber 110. The raw heat flows out to the outside, and in particular, the heat can be blocked to the outside via the lower support portion 130.

Referring to Fig. 1, a batch type deposition film forming apparatus according to an embodiment of the present invention can be configured such that a rotating portion 180 is provided. The rotating unit 180 can rotate the process gas supply unit 140 and can be located at a lower portion of the process gas supply unit 140.

Fig. 3 is a cross-sectional view showing the structure of a process gas generating unit 160 according to an embodiment of the present invention.

Referring to Fig. 3, the process gas generating unit 160 includes an inflow passage 161 through which a halogen-containing gas such as HCl supplied from the second inner tube 147 passes, and a first unblocking portion through which the halogen-containing gas supplied from the inflow passage 161 passes. 162a; the second dredging portion 162b connected to the first dredging portion 162a; the metal source storing portion 166 of the metal source 163 that reacts with the halogen-containing gas passing through the second dredging portion 162b; and the metal source 163 and The metal halogen gas generated by the reaction of the halogen gas is supplied to the discharge passage 164 of the first inner tube 142.

The halogen-containing gas supplied upward via the second inner tube 147 of the process gas supply unit 140 can be supplied to the process gas generation unit 160 via the inflow passage 161. The halogen-containing gas that has been supplied to the process gas generating unit 160 can be supplied to the metal source 163 via the first dredging portion 162a and the second dredging portion 162b. Metal source 163 can be, for example, a Ga source. The process gas generating unit 160 may have a cylindrical shape, and the first dredging portion 162a and the second dredging portion 162b may be formed such that the halogen-containing gas may flow along the process gas generating unit from the inflow path 161 located at the center of the process gas generating unit 160. The outer periphery of 160 flows to reach the metal source 163. Compared to the halogen-containing gas from the inflow path 161 In the case where the metal source 163 is immediately in contact with the inflow, the area and time at which the halogen-containing gas contacts the metal source 163 can be increased by such a configuration. Therefore, according to an embodiment of the present invention, the probability that the halogen-containing gas reacts with the metal in the metal source 163 to become a metal halogen gas is improved. Further, since the metal source 163 is located inside the chamber 110 maintained at a high temperature by the heater 120, it is not necessary to use a separate heater to easily control the reaction temperature in order to maintain the temperature at which the halogen-containing gas reacts with the metal.

The halogen-containing gas that has been supplied to the metal source 163 reacts with the metal contained in the metal source 163 to generate a metal halogen gas, and the generated metal halogen gas system can be supplied to the first inner tube via the discharge passage 164. 142. The discharge passage 164 can be formed in the process gas generation unit 160, and the metal halogen gas formed by reacting the halogen-containing gas flowing along the outer periphery of the process gas generation unit 160 with the metal source 163 can be directed to the process gas generation unit 160. The first inner tube 142 on the center side flows. Since the discharge passage 164 for supplying the metal halogen gas to the process gas supply unit 140 is located inside the chamber 110, it is possible to prevent the metal halogen gas from being liquefied or condensed in the discharge passage 164. The metal halogen gas that has been supplied to the first inner tube 142 can flow down along the inside of the first inner tube 142 and be ejected to the plurality of substrates 10 via the first gas injection port 143.

On the other hand, inside the process gas generating unit 160, a bearing block 165 for forming the inflow passage 161, the first dredging portion 162a, the second dredging portion 162b, and the discharge passage 164 can be provided. In other words, the bearing block 165 can be disposed inside the process gas generating unit 160 so that a gap can be formed between the inner surface of the process gas generating unit 160 and the bearing block 165, and the gap can be The inflow passage 161, the first dredging portion 162a, the second dredging portion 162b, and the discharge passage 164 are formed at the position formed.

According to the present invention, the metal source 163 for generating the metal halogen gas and the discharge passage 164 for supplying the metal halogen gas to the process gas supply portion 140 can be located inside the chamber 110. Therefore, unlike the previously deposited thin film forming apparatus in which the element for supplying the metal halogen gas is located outside the chamber, it is not necessary to additionally provide a heater for maintaining the reaction temperature of the metal source 163, and it is easy to control the reaction temperature of the metal source 163 and The metal halogen gas flowing along the discharge passage 164 is prevented from being liquefied or condensed due to low temperature. Therefore, the metal halogen gas can be stably supplied to the process gas supply unit 140.

The present invention has been illustrated and described with reference to the preferred embodiments of the present invention, but is not limited by the scope of the present invention, and has the ordinary knowledge in the technical field to which the invention belongs. It is possible to carry out various modifications and changes. Such modifications and variations are within the scope of the invention and the scope of the appended claims.

140‧‧‧Process Gas Supply Department

141‧‧‧External management

142‧‧‧1st inner tube

143‧‧‧1st gas injection port

146‧‧‧ Internal space outside the inner tube

147‧‧‧2nd inner tube

160‧‧‧Process Gas

161‧‧‧Inflow path

162a‧‧‧1st dredge

162b‧‧‧2nd dredge

163‧‧‧Metal source

164‧‧‧Drainage path

165‧‧‧ bearing block

166‧‧‧Metal source storage

Claims (11)

A batch deposition film forming apparatus for forming a deposited film on a plurality of substrates; characterized by comprising: a chamber for providing a space for forming the deposited film; and a heater disposed outside the chamber; Applying heat to a plurality of substrates; the substrate support is disposed inside the chamber to mount the plurality of substrates; and the process gas supply portion is disposed inside the chamber so as to penetrate the center of the substrate support, The plurality of substrates are supplied with a process gas; the process gas exhausting portion is configured to exhaust the process gas; and the process gas generating portion is disposed inside the chamber to cause a metal in the metal source to react with the halogen-containing gas to generate The first process gas is supplied to the process gas supply unit. A batch type deposition film forming apparatus according to claim 1, wherein said process gas generating portion is located at an upper end of said process gas supply portion. The batch type deposition film forming apparatus according to claim 2, wherein the process gas supply unit includes a first inner tube and a second inner tube, and the second inner tube is supplied to the processing gas generating unit. The halogen gas flows toward the process gas generating unit, and the first inner tube is configured to flow the first process gas supplied from the process gas generating unit. The batch type deposition film forming apparatus according to claim 3, wherein the process gas generating unit includes: an inflow passage for causing the halogen-containing gas flowing in the second inner tube to flow into the process gas generating unit; and a dripping portion And a method for guiding the halogen-containing gas flowing in through the inflow passage to a metal source; the metal source storage portion is configured to store the metal source; and the discharge passage is configured to discharge the first process gas to the first The inner tube is formed by reacting the halogen-containing gas in the first process gas system with a metal in the metal source. The batch type deposition film forming apparatus according to claim 4, wherein the dredging portion is formed such that the halogen-containing gas flowing in from the inflow passage can flow along the outer periphery of the process gas generating portion to reach the metal source. A batch type deposition film forming apparatus according to claim 5, wherein a bearing block is disposed in the process gas generating portion in order to form the inflow passage, the dredging portion, and the discharge passage. The batch type deposition film forming apparatus according to claim 3, wherein the process gas supply unit includes: a first gas injection port that ejects the first process gas supplied through the first inner tube; and a second gas injection port The second process gas is injected, and the second process gas system is supplied through a space other than the space occupied by the first inner pipe and the second inner pipe in the outer pipe. The batch type deposition film forming apparatus according to claim 7, wherein the first gas injection port is formed in a nozzle form formed on an outer wall of the inner tube and penetrates a hole formed in the outer tube, and the first gas injection port The end portion exposes the outside of the aforementioned outer tube. The batch type deposition film forming apparatus according to claim 7, wherein the second gas injection port is formed in a hole form formed in the outer tube. The batch type deposition film forming apparatus according to claim 7, wherein the first process gas and the second process gas have different types. The batch type deposition film forming apparatus of claim 3, wherein the plurality of first inner tubes are plural.