CN105839080A - Deposit film forming device containing rotary parts - Google Patents

Deposit film forming device containing rotary parts Download PDF

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Publication number
CN105839080A
CN105839080A CN201510024399.1A CN201510024399A CN105839080A CN 105839080 A CN105839080 A CN 105839080A CN 201510024399 A CN201510024399 A CN 201510024399A CN 105839080 A CN105839080 A CN 105839080A
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CN
China
Prior art keywords
substrate support
membrane formation
formation device
deposition membrane
supporting part
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Pending
Application number
CN201510024399.1A
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Chinese (zh)
Inventor
吴忠锡
李裕进
李在鹤
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TGO TECHNOLOGY CORP
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TGO TECHNOLOGY CORP
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Priority to CN201510024399.1A priority Critical patent/CN105839080A/en
Publication of CN105839080A publication Critical patent/CN105839080A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a deposit film forming device containing rotary parts. An embodiment of the invention provides a d deposit film forming device, which is characterized by comprising a plurality of substrate support parts, each substrate support part is equipped with a plurality of rotary parts for rotating a plurality of substrates respectively, each of the rotary parts rotates on the substrate support parts in a gas-foil way, besides the parts where the plurality of rotary parts are located, the rest parts of the substrate support parts are provided with cover bodies, and gaps are formed between the substrate support parts and the cover bodies, the specified gas used in the gas-foil way can be discharged through the gaps.

Description

Comprise the deposition membrane formation device of rotary part
Technical field
The present invention relates to a kind of deposition membrane formation device comprising rotary part.Particularly, the present invention relates to Can be by each rotary part of being included in multiple substrate support to control the deposition film of substrate rotation Form device.
Background technology
Light emitting diode (LED:Light Emitting Diode) is as the quasiconductor converting the current to light Light-emitting component, the display image light source of the electronic installation being widely used in including information communication device. Particularly, different from the traditional lighting such as electric filament lamp, fluorescent lamp, its efficiency converting electric energy to luminous energy is high, The highest can save 90% energy, along with this fact known, as replacing fluorescent lamp or incandescent lamp bulb Element and attracted attention by people.
The manufacturing process of this LED element substantially can be divided into epitaxy technique, chip technology, packaging technology. Epitaxy technique be instigate compound semiconductor in the technique of Epitaxial Growing (epitaxial growth), Chip technology refers to form electrode to manufacture the work of epitaxial chip at each several part through epitaxially grown substrate Skill, packaging technology refers on the epitaxial chip by being connected to so manufacture by lead-in wire (Lead) and carries out Encapsulation is so that light is transmitted into outside technique as much as possible.
It can be said that epitaxy technique is the most crucial work of the luminous efficiency determining LED element in these techniques Skill.This is because, when compound semiconductor is not at Epitaxial Growing, crystallization is internal there is defect, And this defect is as non-luminescent center (nonradiative center), thus reduce the luminescence of LED element Efficiency.
Mainly use outside liquid phase when carrying out this epitaxy technique, i.e. forming the technique of epitaxial layer on substrate Prolong (LPE:Liquid Phase Epitaxy), vapour phase epitaxy (VPE:Vapor Phase Epitaxy), divide Sub-beam epitaxy (MBE:Molecular Beam Epitaxy), chemical gaseous phase deposition (CVD:Chemical Vapor Deposition) method etc., wherein, main employing Metalorganic chemical vapor deposition method (MOCVD: Metal-Organic Chemical Vapor Deposition) or hydride vapour phase epitaxy method (HVPE: Hydride Vapor Phase Epitaxy)。
When utilizing existing MOCVD method and HVPE method to form epitaxial layer on multiple substrates, Typically from chamber interior supply for processing the process gas of substrate.But, in order to improve the uniform of technique Degree, the substrate support being preferably provided with multiple substrate carries out rotating (idle running), and preferably several Substrate carries out rotating (rotation) the most respectively on substrate support.But, form dress at existing deposition film Put and be difficult to multiple substrates rotation respectively while substrate support idle running.
Summary of the invention
The present invention is to solve that all problems of prior art as above proposes, it is therefore intended that provide A kind of deposition membrane formation device, described deposition membrane formation device can prop up by being separately contained in multiple substrate Rotary part in support part is to control the rotation of substrate.
According to one embodiment of the invention, it is provided that a kind of deposition membrane formation device, it is characterised in that include Multiple substrate support, are configured with for rotating multiple substrate respectively on each described substrate support Multiple rotary parts, each described rotary part is supported at described substrate by air cushion (gas-foil) mode Rotate in portion, on described substrate support in addition to part residing for the plurality of rotary part Part is provided with lid, is formed with gap, at described air cushion before described substrate support and described lid Regulation gas used in mode is discharged by described gap.
According to the present invention, it is provided that a kind of can be by each rotating part being included in multiple substrate support Part is to control the deposition membrane formation device of substrate rotation.
Additionally, according to the present invention, it is provided that the uniformity of a kind of deposition film that can improve between multiple substrate Deposition membrane formation device.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the structure of the deposition membrane formation device that one embodiment of the invention relates to.
Fig. 2 is the top view of the structure of the substrate support 30 that one embodiment of the invention relates to.
Fig. 3 is the longitudinal section of the structure of the substrate support 30 that one embodiment of the invention relates to.
Fig. 4 is to remove rotary part 31 and lid in the substrate support 30 that one embodiment of the invention relates to The top view of the structure of body 32.
Fig. 5 is the axonometric chart illustrating Fig. 4 from other angles.
Fig. 6 is the partial structurtes schematic diagram of the deposition membrane formation device 10 that one embodiment of the invention relates to.
The schematic diagram that Fig. 6 " B " part is amplified by Fig. 7.
Fig. 8 is the structural representation of the first supporting part that one embodiment of the invention relates to.
Fig. 9 is the partial schematic diagram of the substrate support that another embodiment of the present invention relates to.
Figure 10 is the integrated structure between connecting tube and the substrate support that another embodiment of the present invention relates to Schematic diagram.
Reference
10: deposition membrane formation device
30: substrate support
31: rotary part
32: lid
33: gap forms parts
34: gap
36: rotary part resettlement section
38: protuberance
Detailed description of the invention
Relevant detailed description of the invention described later, reference example illustrates the ability to implement the particular implementation of the present invention The accompanying drawing of example.By the detailed description to these embodiments, those skilled in the art can be the most real Execute the present invention.Although various embodiments of the present invention are different, but should not be construed as mutually exclusive.Example As, it is recorded in this given shape of an embodiment, structure and characteristic, in the essence without departing from the present invention On the basis of god and scope, can embody with the form of other embodiments.Also, it is to be understood that, often The position of the indivedual elements in individual disclosed embodiment or setting, can be in the essence without departing from the present invention Change in the case of god and scope.Therefore, detailed description described later is not intended to limit the present invention, Precisely, the scope of the present invention is only as the criterion with the content described in claims, including with its right Require all scopes of the content equivalent advocated.Reference similar in accompanying drawing represents in many aspects Same or similar function.
Describe the structure of the present invention with reference to the accompanying drawings in detail.
Fig. 1 is the schematic diagram of the structure of the deposition membrane formation device illustrating that one embodiment of the invention relates to.
First, the material of the substrate (not shown) being loaded on deposition membrane formation device 10 is the most particularly Limit, the various materials such as glass, plastics, polymer, silicon wafer, rustless steel, sapphire can be loaded Substrate.Say using the circular sapphire substrate used in light emitting diode field as example below Bright.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include chamber 20.Chamber 20 It is configured to inner space during technique is carried out airtight by substance, thus provides at multiple substrates The upper space forming deposition film.This chamber 20 keeps optimal process conditions, can be manufactured into square Or it is circular.Be preferably chamber 20 material by quartz (quartz) glass, be coated with carborundum (SiC) Graphite etc. constitute, but be not limited to this.
Generally, the technique forming deposition film on substrate, after chamber 20 internal supply deposited material, The internal temperature of chamber 20 is heated to the temperature (such as, about 800 DEG C to 1200 DEG C) of regulation and realizes. So, the deposited material being supplied to supplies to substrate to participate in the formation of deposition film.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include heater (not shown). It is outside that heater is arranged on chamber 20, can apply the heat needed for depositing operation to multiple substrates.In order to Making deposition film smooth growth on substrate, substrate temperature can be heated to more than 1200 DEG C by heater.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include substrate support 30.Excellent Elect substrate support 30 as and be formed as multiple, and substrate support 30 is arranged with layered arrangement.So, When substrate support 30 is formed as multiple, multiple substrate support 30 can pass through gap retaining member (not shown) arranges fixing in the way of keeping certain intervals each other.The quantity of substrate support 30 is permissible Various change is carried out according to the purpose of the present invention.It is preferably substrate support 30 and gap retaining member It is made up of quartz glass etc., but is not limited to this.
Additionally, multiple rotary part (the 31 of Fig. 2) can be provided with at substrate support 30.It is preferably It is arranged on the quantity of the rotary part 31 on each substrate support 30 and is arranged in each substrate support The quantity of the substrate on 30 is identical, but is not limited to this.In order to be supplied uniformly across processing substrate to substrate Gas, rotary part 31 can possess the function making substrate rotate.This is described in detail below.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include process gas supply unit 40.Process gas supply unit 40 can form the processing substrate needed for deposition film to the internal supply of chamber 20 Gas.
This specification is arranged in the structure at chamber 20 center although the description of process gas supply unit 40, but It is not limited to this.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include the first supporting part 60.The One supporting part 60 is arranged on the bottom of chamber 20, supports multiple substrate and prop up during depositing operation is carried out Support part 30.Additionally, the first supporting part 60 can be rotated by single rotary apparatus (not shown), Thus induce the rotation of multiple substrate support 30.
The deposition membrane formation device 10 that one embodiment of the invention relates to can include the second supporting part 70.The Two support sectors 70 are configured to, and be arranged on the bottom of chamber 20, and wrap together with the first supporting part 60 Enclose the periphery of the first supporting part 60.Additionally, the second supporting part 70 can be arranged to, with the first supporting part The rotation of 60 independently, is fixed relative to chamber 20.
Below, the structure of the substrate support 30 that one embodiment of the invention relates to is further described.
Fig. 2 is the top view of the structure of the substrate support 30 illustrating that one embodiment of the invention relates to, figure 3 is the longitudinal section of the structure of the substrate support 30 illustrating that one embodiment of the invention relates to.
With reference to Fig. 2 and Fig. 3, the substrate support 30 that one embodiment of the invention relates to includes installing Multiple rotary parts 31 of multiple substrates 5.Rotary part 31 can have the shape corresponding to substrate 5, For example, it may be it is circular.Multiple rotary parts 31 can be respectively with air cushion on substrate support 30 (gas-foil) mode rotates.Although the present embodiment illustrates the substrate being arranged on substrate support 30 The quantity of 5 is 6, but is not limited to this, and is arranged on the substrate on substrate support 30 Position can also be changed.
It addition, the part in addition to being configured with rotary part 31 can cover in substrate support 30 Individually lid 32.Rotary part 31 can be configured to lid 32, the upper surface of rotary part 31 Height is substantially identical with the upper level of lid 32.
Below, illustrate to supply the runner of regulation gas in substrate support 30 with reference to Fig. 4 and Fig. 5 51,52,53 and groove 37.Fig. 4 is to illustrate the substrate support 30 that one embodiment of the invention relates to The top view of the structure of middle removal rotary part 31 and lid 32, Fig. 5 is to illustrate Fig. 4 from other angles Axonometric chart.
With reference to Fig. 4 and Fig. 5, the position being configured with rotary part 31 in substrate support 30 can set Put the rotary part resettlement section 36 corresponding to rotary part 31, rotary part resettlement section 36 is formed Groove 37.Groove 37 can circulate regulation gas (such as, nitrogen), it is stipulated that gas can be from first-class Road 51 supplies, and is supplied to groove 37 by the second runner 52 and the 3rd runner 53.At groove 37 The regulation gas of circulation can provide the revolving force that rotary part 31 can be made to rotate.The shape of groove 37 can To be formed as, rotary part 31 is made to rotate, for example, it is possible to be formed towards regulation side to the direction of regulation To helical form.Additionally, for the rotation number adjusting rotary part 31, the width of groove 37 can be adjusted Degree or the degree of depth.Additionally, although Fig. 4 illustrates, along the direction of regulation gas circulation, the width of the 37 of groove Degree and the degree of depth are identical, but can also be formed as, and the width of groove 37 and the degree of depth are along regulation gas The direction consecutive variations of circulation.Such as, along the direction of regulation gas circulation, the width of groove 37 is permissible Becoming narrow gradually, the degree of depth of groove 37 can gradually become shallower as.
One end of second runner 52 can be connected with first flow 51, first flow 51 can circulate from The regulation gas that gas supply part (the 80 of Fig. 6) supplies.Although Fig. 4 is formed in being shown in substrate support 30 There are three first flows 51, and go out two the second runners 52 from each first flow 51 difference, but The quantity of one runner 51 and the quantity of the second runner 52 gone out from first flow 51 difference are not limited to This, can increase the quantity of runner.And, although the middle difference being shown in the second runner 52 goes out the 3rd Runner 53, but it is not limited to this, the form of channel arrangement can also be changed as required.Additionally, Although figure illustrating, being formed with the position of first flow 51 is arranged on the outside of substrate support 30, but It is not limited to this, as long as the purpose of the present invention of being capable of, can be formed on optional position.
It addition, in order to prevent the rotary speed generation deviation between each rotary part 31, be preferably to respectively Individual second runner 52 supplies same amount of regulation gas.To this end, preferably several first flow 51 cut The summation of area is more than the summation of the sectional area of multiple second runners 52.
Could be formed with protuberance 38 at the center of rotary part resettlement section 36, be formed at rotary part The groove (not shown) at 31 lower surface centers combines.Owing to the groove of protuberance 38 with rotary part 31 is combined, And circulation regulation gas in groove 37, thus rotary part 31 can revolve centered by protuberance 38 Turn.
Illustrate that gap forms parts 33 referring to Fig. 3 and Fig. 5.If lid 32 and substrate support 30 are adjacent to, then being supplied to the regulation gas that groove 37 makes rotary part 31 rotate cannot smooth and easy discharge, Flow-disturbing is formed on the downside of rotary part 31, it is possible to hinder the rotation of rotary part 31, or from Discharge between rotary part 31 and lid 32, it is possible to hinder the formation of the deposit on substrate 5. Thus, it is possible to arrange multiple gap on substrate support 30 to form parts 33.Parts are formed by gap 33, can be formed between lid 32 and substrate support 30 can the smooth and easy gap discharging regulation gas 34.Supply the regulation gas making rotary part 31 rotate to groove 37 to be arranged swimmingly by gap 34 Go out to outside such that it is able to solve to hinder rotary part 31 because forming flow-disturbing on the downside of rotary part 31 The problem that the problem rotated and obstruction form deposit on the substrate 5.
It addition, could be formed with through hole at the center at the center of substrate support 30 Yu lid 32 35, through for process gas supply unit 40.Through hole 35 can include being formed at substrate support The first through hole 35 ' on 30 and the second through hole 35 being formed on lid 32 ".Excellent Elect the diameter diameter slightly larger than process gas supply unit 40 in through hole 35 as.
Illustrate to make rotary part 31 rotate to substrate support 30 supply referring to Fig. 6 to Fig. 8 Regulation gas mode.
Fig. 6 is the partial structurtes schematic diagram of the deposition membrane formation device 10 that one embodiment of the invention relates to.
With reference to Fig. 6, the deposition membrane formation device 10 that one embodiment of the invention relates to can include gas supply part 80.Gas supply part 80 can be by specifying gas (example for flow channel 81 to the internal supply of the second supporting part 70 Such as nitrogen).
Second supporting part 70 is internal could be formed with internal supply channel 70a, can make regulation gas to provide The passage of circulation.The regulation gas circulating in internal supply channel 70a passes through and internal supply channel 70a After the inner flow passage 60a within the first supporting part 60 connected, pass through and going out that connecting tube 50 is connected Mouth 60e, the connecting passage 54 in being formed at connecting tube 50 is internal to be flowed into.Connecting passage 54 connects many Individual substrate support 30, so that regulation gas supply is to the substrate support 30 of top side.Each substrate props up First flow 51 it is formed with, to supply regulation gas to the second runner 52 and the 3rd runner 53 on support part 30 Body, this point is identical with preceding description.
The schematic diagram that Fig. 6 " B " part is amplified by Fig. 7." B " part relates to regulation gas From the part in the path that the second supporting part 70 flows into the first supporting part 60.Additionally, Fig. 8 is to illustrate this The schematic diagram of the structure of the first supporting part that one embodiment of invention relates to.
With reference to Fig. 7 and Fig. 8, the first support between internal supply channel 70a and inner flow passage 60a Connecting portion 60c is could be formed with in portion 60.Connecting portion 60c can be along the rotation side of the first supporting part 60 Scrobicular ring shape is formed as to the outside at the first supporting part 60.Thus, even if the first supporting part 60 rotates, It also is able to flow into the inside within the first supporting part 60 from the regulation gas of internal supply channel 70a supply Runner 60a.
The position of the regulation in connecting portion 60c could be formed with the outlet 60d that inner flow passage 60a starts. Owing to the first supporting part 60 can rotate, therefore the position of entrance 60d can also rotate.Thus, even if Internal supply channel 70a is not mated with the position of entrance 60d, the regulation discharged from inner flow passage 60a Gas can also flow into entrance 60d after circulating along the connecting portion 60c of scrobicular ring shape.Along connecting portion 60c Top and bottom be configured with seal member 65 such that it is able to prevent regulation gas from the first supporting part 60 with And second between supporting part 70 to External leakage.
According to another embodiment of the present invention, in order to prevent regulation gas from connecting tube 50 and substrate support Leak between 30, it is provided that the integrated structure between connecting tube 50 and substrate support 30.Fig. 9 is this The schematic diagram of the local of the substrate support that another bright embodiment relates to, Figure 10 is another reality of the present invention Execute the schematic diagram of integrated structure between connecting tube and the substrate support that example relates to.
With reference to Fig. 9 and Figure 10, the position being connected with connecting tube 50 in substrate support 30, i.e. formed There is the bonded block 39 that could be formed with concaveconvex shape around the position of first flow 51.Bonded block 39 By being formed at the first bonded block 39a in outside and the second bonded block 39b of inner side can be formed at Constituting, the first bonded block 39a and the second bonded block 39b respectively can be in the form of a ring.Correspondingly, Could be formed with in the end of connecting tube 50 and there is the concave-convex corresponding with the concaveconvex shape of bonded block 39 The structure of shape, i.e. first corresponding bonded block 50a and the second corresponding bonded block 50b.As shown in Figure 10, When connecting tube 50 is combined with substrate support 30, the first corresponding bonded block 50a inserts the first combination Between parts 39a and the second bonded block 39b, the second corresponding bonded block 50b inserts the second joint portion The inner side of part 39b.I.e., the concaveconvex shape of connecting tube 50 end and the concavo-convex of bonded block 39 it are formed at Shape can be the most chimeric.By the combination between this connecting tube 50 and substrate support 30, It is prevented from regulation gas to leak between connecting tube 50 and substrate support 30.
Above the integrated structure of connecting tube 50 with substrate support 30 is illustrated, but connecting tube 50 can also be suitable for identical integrated structure when the first supporting part 60 is combined.
As it has been described above, the present invention is illustrated by preferred embodiment, but the present invention is not limited to Above-described embodiment, those skilled in the art can be carried out respectively in the scope without departing from spirit of the present invention Plant deformation and change.It will be appreciated that the right that this variation and modification are included in the present invention is wanted In the range of asking.

Claims (12)

1. a deposition membrane formation device, it is characterised in that
Including multiple substrate support,
Each described substrate support is configured with the multiple rotating parts for rotating multiple substrate respectively Part,
Each described rotary part is rotated on described substrate support by air cushion mode,
On described substrate support, the part in addition to part residing for the plurality of rotary part is provided with Lid,
It is formed with gap, used in described air cushion mode before described substrate support and described lid Regulation gas be discharged by described gap.
Deposition membrane formation device the most according to claim 1, it is characterised in that
The plurality of substrate support can each rotate.
Deposition membrane formation device the most according to claim 1, it is characterised in that
The upper level of the plurality of rotary part is identical with the upper level of described lid.
Deposition membrane formation device the most according to claim 1, it is characterised in that
Described substrate support configures multiple gap and forms parts, with in described substrate support and institute State formation gap between lid.
Deposition membrane formation device the most according to claim 1, it is characterised in that
Described in described substrate support, multiple positions at multiple rotary part places are respectively formed with prominent Portion,
The plurality of rotary part can pivot about with described protuberance respectively.
Deposition membrane formation device the most according to claim 2, it is characterised in that
Also include the first supporting part for supporting the plurality of substrate support and the second supporting part,
Described first supporting part can rotate together with the plurality of substrate support,
Described second supporting part is fixed.
Deposition membrane formation device the most according to claim 6, it is characterised in that
The inside supply channel for carrying described regulation gas it is formed with in described second supporting part,
In described first supporting part, form oriented the plurality of substrate support carry described regulation gas Inner flow passage,
The connecting portion of scrobicular ring shape it is formed with, to connect described internal supply in the side of described first supporting part Runner and described inner flow passage.
Deposition membrane formation device the most according to claim 7, it is characterised in that
At least side in the top and bottom of described connecting portion is formed for preventing described regulation gas The seal member of the leakage of body.
Deposition membrane formation device the most according to claim 7, it is characterised in that
Described first supporting part and the plurality of substrate support are positioned at lower side substrate support it Between and/or adjacent substrate support between, be provided with making described regulation gas flow at least One connecting tube.
Deposition membrane formation device the most according to claim 9, it is characterised in that
In described first supporting part or each the plurality of substrate support and the position shape that described connecting tube is combined Become the bonded block having the leakage for preventing described regulation gas.
11. deposition membrane formation devices according to claim 10, it is characterised in that
Described bonded block is concaveconvex shape.
12. deposition membrane formation device according to claim 11, it is characterised in that
The concave-convex corresponding with the concaveconvex shape of described bonded block it is formed with in the end of described connecting tube Shape,
The concaveconvex shape being formed at described connecting tube end is the most embedding with the concaveconvex shape of described bonded block Close.
CN201510024399.1A 2015-01-16 2015-01-16 Deposit film forming device containing rotary parts Pending CN105839080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510024399.1A CN105839080A (en) 2015-01-16 2015-01-16 Deposit film forming device containing rotary parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510024399.1A CN105839080A (en) 2015-01-16 2015-01-16 Deposit film forming device containing rotary parts

Publications (1)

Publication Number Publication Date
CN105839080A true CN105839080A (en) 2016-08-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510024399.1A Pending CN105839080A (en) 2015-01-16 2015-01-16 Deposit film forming device containing rotary parts

Country Status (1)

Country Link
CN (1) CN105839080A (en)

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Application publication date: 20160810