KR20170034955A - 3 Step Vacuum Metallizing Coating Film Capacitor, and Inverter system - Google Patents

3 Step Vacuum Metallizing Coating Film Capacitor, and Inverter system Download PDF

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Publication number
KR20170034955A
KR20170034955A KR1020150132766A KR20150132766A KR20170034955A KR 20170034955 A KR20170034955 A KR 20170034955A KR 1020150132766 A KR1020150132766 A KR 1020150132766A KR 20150132766 A KR20150132766 A KR 20150132766A KR 20170034955 A KR20170034955 A KR 20170034955A
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dielectric
deposition
operating region
capacitor
metal
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KR1020150132766A
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Korean (ko)
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KR101807243B1 (en
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박대진
전용원
한기주
박진아
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주식회사 뉴인텍
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/08—Cooling arrangements; Heating arrangements; Ventilating arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The present invention relates to a radiation improving capacitor with a three-layer deposited film and an inverter system. The present invention includes: a dielectric part (110) formed with a deposited film and including first and second metallic cones (111,112); a bus bar combiner (140) comprising a first bus bar (120) including a first body plate (121) connected to the first metallic cone (111) of the dielectric part (110) through a first contact part (123), and a second bus bar (130) including a second body plate (131) connected to the second metallic cone (112) of the dielectric part (110) through a second contact part (133), and having the second body plate (131) overlapped with the first body plate (121) by having an insulator placed between the two plates; a housing (150) embedding the dielectric part (110) and the bus bar combiner (140), and including an embedding space between an upper wall (150b) and a lower wall (150a); and a main body fixing part protruding from the lower part of the housing (150) and including a fixed part (161) penetrated by a combination unit. The fixed part (161), located at the bottom of the housing (150), is fixed to the floor of an inverter case through the combination unit. Heat, generated from the inside of the capacitor, is cooled by a low temperature of the inverter case touching the lower wall (150a). The deposited film is deposited with metal and formed as a pair of two layers facing each other.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a three-step evaporation film and an inverter system,

The present invention relates to a heat dissipation-improving capacitor and inverter system having a three-layer deposited film.

In case of non-patterned deposition film, deposition resistance was usually used. However, when weak point exists in film dielectric, instantaneous PN short-circuit occurs, the deposited metal disappears due to carbonization, insulation is restored, and capacitor function is maintained Self Healing. The self-recovered part is very small and the capacity is not reduced. However, if the self-recovery is not performed at the weak point, there is a disadvantage that the insulation force is lost between the PN gaps and the breakdown voltage is generated. 1 is a view for explaining the concept of Self Healing. The white part on the right side is carbonized to become a nonconductive part. When carbonized in the opposite part, self-recovery (insulation from the surroundings) is made in the area and becomes an inactive area.

Capacitors of non-patterned film have built-in security device to solve the problem that secondary breakdown occurs due to defective breakdown if self-recovery does not occur. If the self-recovering film capacitor is not self-recovering, the film capacitor is short-circuited between the PN poles and gas pressure is generated inside the film to open a pressure fuse (security device) to prevent secondary disasters Respectively. This method has a disadvantage in that the performance is excellent, but space is required to accommodate the pressure fuse, the size is increased, and the unit price is increased. Related patent is disclosed in the applicant's patent 10-2011-0087853.

In the case of the deposited film, when the deposition resistance is low, more energy is required when the self-recovery phenomenon occurs at the weak point, and when the self-recovery is large, the capacitor has a large damage and the defective pressure is generated when the repetition phenomenon occurs. If it is low, there is an advantage that the deposited metal is not oxidized. On the other hand, when the deposition resistance is high, the self-recovery property is excellent and the damage to the capacitor is weak when the self-recovery is performed at the weak point. The capacitor durability life is prolonged, however, when the deposition film having high deposition resistance is exposed, Is oxidized to deteriorate the capacitor durability. The present invention provides a deposition film and a capacitor for a multi-stage capacitor, which has advantages of self-recovery superiority (advantageous when the thickness is thin) and decrease in the amount of heat generated when the resistance is low and reduction in oxidation phenomenon will be.

The present invention can reduce the temperature rise of the capacitor while improving the self-recovery property without using the pattern film (FIG. 8), and it is possible to prevent the deposition resistance from being oxidized by the capacitor durability And to provide a deposition film and a capacitor for a multistage capacitor capable of reducing such deterioration.

The disadvantage of the conventional pattern film capacitors is that the material cost and size are increased and increased by 4 to 10% and the conventional non-patterned film capacitors are not self-healed in order to prevent the secondary breakdown It has been developed with a focus on solving all of the problems of increasing the material cost and increasing the size due to the built-in security device.

A dielectric part 110 formed using a deposition film and having first and second metallizations 111 and 112 formed thereon;

A first bus bar 120 having a first body plate 121 electrically connected to the first metal plate 111 and the first contact part 123 of the dielectric part 110, And a second body plate 131 electrically connected to the second body plate 121 through the second contact portion 133. The second body plate 131 is disposed between the first body plate 121 and the insulator And a second bus bar (130) which overlaps the first bus bar (130);

A housing 150 having the built-in space between the upper wall portion 150b and the lower wall portion 150a with the dielectric portion 110 and the bus bar joint 140 installed therein;

And a mother fixing unit 160 protruding from the lower part of the housing 150 to the outer periphery and having a fixed part 161 through which the fixing unit passes,

The fixed portion 161 located at the lower portion of the housing 150 is fixed to the bottom of the inverter case by the fastening means and the heat generated at the bus bar combination body 140 contacts the lower wall portion 150a at a low temperature Lt; / RTI >

The first body plate 121 and the second body plate 131 of the bus bar combination body 140 are positioned below the dielectric part 110 but not above the dielectric part 110

Wherein the deposition film is formed by depositing a metal and stacking the two films so as to face each other in a pair,

A metallic contact portion 10 for energizing a metallic capacitor of a capacitor is formed at one side end 1a of the dielectric 1 in the width direction by metal deposition and a metal is not deposited at the other end 1b in the width direction of the dielectric 1 A margin portion 20 is formed and a metal is deposited between the metal contact portion 10 and the margin portion 20 to form an operation region A,

The operating region A includes a first operating region 30 located on one side in the width direction of the dielectric 1 and adjacent to the metallic contact 10,

And a second operating region (40) located on the other side in the width direction of the dielectric (1) and adjacent to the margin portion (20)

The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30,

The deposition thickness t0 of the metalic contact portion 10 is thicker than the deposition thickness t1 of the first operation region 30,

The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40 of the second operating region 40,

The first operation region 30 of the upper deposition film 100 and the first operation region 30 of the lower deposition film 200 located below the upper deposition film 100 in the width direction are formed so as not to overlap with each other And the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100 A heat-dissipating improved capacitor having a three-step deposition film.

According to the present invention, it is possible to realize a multi-stage capacitor in which the deposition film is implemented in a multistage manner and the advantages of self-recovery superiority, which is advantageous when the resistance is high (when the thickness is thin), reduction of heat generation when the resistance is low, A deposition film and a capacitor are provided.

According to the present invention, the first operating region 30, which is relatively thick and resistant at the same time, makes it possible to improve the self-recovery property by the thin second operating region 40 without using the pattern film, There is provided a deposition film and a capacitor for a multistage capacitor capable of reducing a decrease in the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film in inverse proportion to the increase in the self recovery property.

According to the present invention, conventional pattern film capacitors require and increase the material cost and size by 4 to 10%, and the conventional non-pattern film capacitors have a problem in that they fail to self-heal, There is provided a deposition film and a capacitor for a multistage capacitor which solves the problems of increasing the material cost and increasing the size.

This technology applies to inverter capacitors such as hybrid cars, electric vehicles, hydrogen fuel cell automobile plug-in electric vehicles, but can be applied to general industrial applications. In the prior art, when the metal deposition resistance is increased to increase the self-recovery property, there is a problem that the metal deposition resistance is oxidized when exposed to external moisture or stored for a long period of time. In this case, To improve the conventional moisture and oxidation phenomenon when stored for a long time.

The prior art has a problem in that when the metal deposition resistance is increased, the metal deposition resistance is oxidized when exposed to external moisture or stored for a long period of time. However, when oil is coated on the vapor deposited metal coated portion after vacuum deposition, Oil coating improves the phenomenon that metals deposited on plastic film are oxidized when stored for a long period of time. In particular, when used for Zn deposition, the effect of remarkably reducing resistance to oxidation of metal deposition was remarkable. Further, the oil can be uniformly coated on the vapor-deposited metal-deposited portion and the deposited metal film is coated on the oil, thereby minimizing moisture and reaction, thereby improving the problem of oxidizing the vapor-deposited metal.

1 is a conceptual diagram illustrating self healing.
2 and 3 are capacitors of the present invention.
4 (a) and (b) are cross-sectional views of a deposition film for a multi-stage (three-stage) capacitor according to a second embodiment of the present invention.
FIG. 5 is a perspective view showing a winding film for a multi-stage (three-stage) capacitor according to a second embodiment of the present invention. FIG.
6 is a table of capacitor life;
7 shows an inverter system according to the present invention.
8 is a sectional view of a conventional pattern film.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a heat dissipation improving capacitor and an inverter system having a three-layer deposition film of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a conceptual diagram of a self-healing concept, FIGS. 2 and 3 are capacitors of the present invention, and FIGS. 4 (a) and (b) are cross- FIG. 6 is a diagram showing a capacitor life span, FIG. 7 is an inverter system of the present invention, and FIG. 8 is a view showing a conventional example of a conventional Fig.

Preferably, the capacitor of the present invention is the evaporated film of the present invention, and the capacitor is a film capacitor for an inverter of a hybrid vehicle, an electric vehicle, a hydrogen fuel cell vehicle, or a plug-in electric vehicle. Or as an industrial inverter.

2 and 3, a capacitor according to an embodiment of the present invention includes a dielectric 110 formed using a deposition film and having first and second metallizations 111 and 112 formed thereon; A first bus bar 120 having a first body plate 121 electrically connected to the first metal plate 111 and the first contact part 123 of the dielectric part 110, And a second body plate 131 electrically connected to the second body plate 121 through the second contact portion 133. The second body plate 131 is disposed between the first body plate 121 and the insulator And a second bus bar (130) which overlaps the first bus bar (130); A housing 150 having the built-in space between the upper wall portion 150b and the lower wall portion 150a with the dielectric portion 110 and the bus bar joint 140 installed therein; And a body fixing part 160 protruding from the lower part of the housing 150 to the outside and having a fixing part 161 through which the fastening means passes.

The fixed portion 161 located at the lower portion of the housing 150 is fixed to the bottom of the inverter case by the fastening means and the heat generated inside the capacitor is brought into contact with the lower wall portion 150a, And cooled. As shown in the figure, the first body plate 121 and the second body plate 131 of the bus bar combination body 140 are positioned below the dielectric portion 110 to promote heat radiation.

4 and 5, the upper wall portion of the housing 150 alternately includes the convex surface 151 and the concave groove surface 152 to increase the contact area with the upper surface of the curved element of the dielectric portion 110, Is improved. It is preferable that a thermal pad or thermal grease is interposed between the lower wall of the housing 150 and the inner bottom surface 210 of the inverter case to increase the thermal conductivity.

As shown in FIGS. 4 and 5, the deposition film for a multi-stage capacitor according to an embodiment of the present invention is a deposition film for a capacitor in which a metal is deposited and two pairs are stacked so as to face each other. A metallic contact portion 10 for energizing a metallic wire of a capacitor (a sprayed metal portion, that is, a metalized contact which mediates a side surface of a bus bar and a dielectric) of a capacitor is formed at one widthwise end 1a of the dielectric 1 by metal vapor deposition And a margin portion 20 in which no metal is deposited is formed on the other end 1b in the width direction of the dielectric 1. A metal is deposited between the contact portion 10 and the margin portion 20 to form an operation region A. The operation region A is deposited in a multi-step shape in which the deposition thickness gradually becomes thinner from the contact portion 10 to the margin portion 20.

The deposition film for a multi-stage capacitor according to an embodiment of the present invention is characterized in that a metallic contact portion 10 for energizing a metallic capacitor of a capacitor is formed by metallization at one side end 1a of the dielectric 1 in the width direction, And a metal is deposited between the metal contact portion 10 and the margin portion 20 to form an operation region A. The metal region is formed on the other end 1b in the width direction, The operating region A is located on one side in the width direction of the dielectric 1 and is adjacent to the metallic contact portion 10 and a second operating region 30 located on the other side in the width direction of the dielectric 1, And the deposition thickness t2 of the second operating region 40 is thinner than the deposition thickness t1 of the first operating region 30. [

The deposited metal is selected from aluminum, zinc, or a mixture of aluminum and zinc, a mixed metal of aluminum and zinc and copper, or a mixed metal of aluminum and zinc. Or the metallized contact portion 10 (the lower portion of the steel) is selected from among aluminum, zinc, aluminum and zinc mixed metal, aluminum and zinc and copper mixed metal, aluminum mixed with zinc and silver, 30 and the second operation region 40 are selected from among aluminum, a mixed metal of aluminum and zinc, and a mixed metal of aluminum and zinc.

As shown in the figures, the deposition thickness t0 of the contact portion 10 of the metal capacitor in the capacitor deposition film of the present invention is the deposition thickness t1 of the first operation region 30, And the deposition thickness t1 of the first operation region 30 is larger than the deposition thickness t2 of the second operation region 40 in the second operation region 40, Cm 2 and the deposition resistance of the first operating region 30 is 15 ± 10 Ω / cm 2 and the deposition resistance of the second operating region 40 is 60 ± 50 Ω / cm 2 , . It is possible to provide a metal deposition dielectric film that exhibits excellent capacitor performance as in the prior art in the resistance area per unit area and is excellent in heat generation reduction and self recovery properties and can be mass produced.

4 and 5, in the deposition film for a multi-stage capacitor according to the second embodiment of the present invention, the first operation region 30 of the upper deposition film 100, the upper deposition film 100, The first operation region 30 of the lower deposition film 200 located at the lower side facing to the first operation region 30 of the upper deposition film 100 is formed so as not to overlap with the first operation region 30 The width W3 of the metalic contact portion 10 is 3 to 8 mm and the width of the metalic contact portion 10 is 3 to 8 mm. W3 + the width W1 of the first operating region 30 is preferably 0.2 to 0.5 times the entire width W of the dielectric 1. [

At least 3mm is required for the marginal part and the part where the dielectric film does not overlap at the end. If the margin exceeds 8mm, the Heavy Edge area becomes larger than necessary. The width W3 of the metalic contact portion 10 is 3 to 8 mm and the width of the non-overlapping region B is 2 to 30 mm when the total width of the dielectric is 50 mm when the ratio is 0.2 to 0.5 . The width W3 of the metalic contact 10 and the width W1 of the first operating area 30 are 0.3 to 0.5 times the entire width W of the dielectric 1 and the total width of the dielectric is about 50 mm An unapplied area of 2 to 30 mm is secured. If the size of the non-overlapping region is less than 2 mm, if a clear edge is not formed when the metal vacuum deposition is performed, overlapping portions may occur in the production, which may result in areas where the object of the present invention can not be achieved If the non-overlapped region is too wide, there is a problem that the second operating region 40 is excessively wide.

In order to improve the phenomenon that the metal deposited on the dielectric film is oxidized during storage of moisture and for a long time in the multilayer capacitor deposited film according to an embodiment of the present invention, And the oil is one selected from a silicone type or a fluorine type oil, and when the temperature of the oil is heated at 90 to 170 ° C in the evaporator at the time of vapor deposition, the coating is uniformly coated on the vapor deposition coated portion. That is, in order to improve the phenomenon that the metal deposited on the dielectric film is oxidized when stored for a long period of time, it is preferable that the coated metal is further coated with oil after the metal vacuum deposition. The oil is one selected from a silicone type or a fluorine type oil. It is preferable that the oil temperature is heated to 90 to 170 DEG C in a vacuum evaporator and the evaporated oil is coated on the metal vapor deposition portion, the metal vapor deposition portion and the margin portion.

Test results for the present invention and comparative examples will be described below. The capacitor temperature rise formula can be calculated as follows.

△ T (° C) = I 2 × ESR (ΔT = temperature rise, I = ripple current, ESR = series equivalent resistance).

The capacitance of the capacitor is determined by the following equation. C = (ε X S) / d (C = capacitance of capacitor, ε = permittivity, S = PN pole facing area, d = dielectric thickness).

The present invention is applied to a low inductance capacitor in the prior art and an embodiment of the present invention and built in an inverter for a hybrid electric vehicle. The bus bar is placed on the bottom of the capacitor cell, and the PN pole bus bar is stacked side by side, and the insulator is built in between the superposed inductors and cooling capacitors. In the case of water-cooled or air-cooled type, cooling water or cold air can be made to flow in the bottom surface of the capacitor (inverter housing heat sink). Also, a structure heat sink which absorbs heat from the inside of the device and emits it to the outside can be attached to the opposite side of the capacitor bottom surface. As a result of this test, it was most effective to let the cooling water flow directly.

Table 1 shows test results under the following test conditions: link voltage = 650 Vdc, switching frequency = 16 KHz, ripple current = 80 Arms, ambient temperature = 85 ° C, natural cooling method. The dielectric deposition films were made different from each other and the other parts were made to the system shown in Fig. The temperature measurement points were the cell bottom, the P pole bus bar, the N pole bus bar, and the cell top, and the temperatures shown were based on the Hot Spot.




division Deposition resistance: Ω / cm 2 Material cost, size Characteristics, durability
A metalic contact The first operating region Second operating area Material cost size ESR Temperature rise
(? T)
℃ Temperature rise
(Cooling water circulation) Temperature rise
(Cooling water circulation) Destructive test durability
exam Thermal shock
exam Cold resistance
exam Pattern film: Figure 8
Comparative Example 3 ± 2 13 ± 5 - 104%

~ 110% 104%

~ 110% 1mΩ 6.4 91.4
※standard 81.5 ○ ○ ◎ ◎ Embodiment: Fig. 4 3 ± 2 15 ± 10 60 ± 50 100% 100% 0.5
mΩ 3.2 88.2
※ B 78.3
※ D ◎ ◎ ◎ ◎

(Very good)> (good)> (fair)> (poor)




division Deposition resistance: Ω / cm 2 Material cost, size Characteristics, durability
A metalic contact The first operating region Second operating area Material cost size Film Loss Size
Pattern film: Figure 8
Comparative Example 3 ± 2 13 ± 5 - 104%

~ 110% 104%

~ 110% has exist
× ×
Big
Fig. 4 3 ± 2 15 ± 10 60 ± 50 100% 100% None
◎ ◎

(Very good)>(good)>(fair)> (poor)

Comparative Example In comparison with the cooling water circulation (* standard), the cooling water circulation (* C) and the cooling water circulation (* C) showed a reduction effect at 3.2 ° C, and the cooling water circulation (* D)

According to the life table shown in FIG. 7, when the conventional direct cooling function is absent, about 91.4 is assumed to be 95, the expected lifetime is about 9,000 hours when the capacitor 650V is used, and the capacitor bottom surface is 78.3 And the life expectancy is about 32,000 hours when the capacitor is used at 650V, and the lifetime can be extended by about 23,000 hours.

1: Dielectric substance 1a: one side
1b: other side 10:
20: margin portion 30: first operating region
30a: end 40: second operating area
100: upper deposition film 200: lower deposition film
A: operating area B: non-overlapping area
t: Deposition thickness W: Overall width

Claims (5)

A dielectric part 110 formed using the deposited film and having first and second metallizations 111 and 112 formed thereon;
A first bus bar 120 having a first body plate 121 electrically connected to the first metal plate 111 and the first contact part 123 of the dielectric part 110, And a second body plate for energizing the second body plate 121 through a second contact portion. The second body plate includes a second bus bar 130, which overlaps the first body plate 121 with an insulator, A bus bar assembly 140 comprising a plurality of bus bar assemblies 140;
A housing 150 having the built-in space between the upper wall portion 150b and the lower wall portion 150a with the dielectric portion 110 and the bus bar joint 140 installed therein;
And a mother fixing unit 160 protruding from the lower part of the housing 150 to the outer periphery and having a fixed part 161 through which the fixing unit passes,

The fixed portion 161 located at the lower portion of the housing 150 is fixed to the bottom of the inverter case by the fastening means and the heat generated inside the capacitor is cooled by the low temperature of the bottom surface of the inverter case which is in contact with the lower portion 150a ,

Wherein the deposition film is formed by depositing a metal and stacking the two films so as to face each other in a pair,
A metallic contact portion 10 for energizing a metallic capacitor of a capacitor is formed at one side end 1a of the dielectric 1 in the width direction by metal deposition and a metal is not deposited at the other end 1b in the width direction of the dielectric 1 A margin portion 20 is formed and a metal is deposited between the metal contact portion 10 and the margin portion 20 to form an operation region A,
The operating region A includes a first operating region 30 located on one side in the width direction of the dielectric 1 and adjacent to the metallic contact 10,
And a second operating region (40) located on the other side in the width direction of the dielectric (1) and adjacent to the margin portion (20)
The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30,

The deposition thickness t0 of the metalic contact portion 10 is thicker than the deposition thickness t1 of the first operation region 30,
The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40 of the second operating region 40,

The first operation region 30 of the upper deposition film 100 and the first operation region 30 of the lower deposition film 200 located below the upper deposition film 100 in the width direction are formed so as not to overlap with each other And the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100 A heat-dissipating improved capacitor having a three-step deposition film. The method according to claim 1,
The rear wall part 150c of the housing 150 has a convex surface 151 and a concave groove surface 152 alternately to increase the contact area with the upper surface of the curved element of the dielectric part 110 to improve the heat radiation function Wherein the capacitor is a capacitor for an automotive inverter having improved heat prevention properties. The method according to claim 1,
The deposition resistance of the metalic contact portion 10 is 3 2 Ω / cm 2 ,
And the first operating region 30 are 15 < RTI ID = 0.0 > 10 < / RTI &
Deposition resistance of the second working area 40 is 60 ± 50 Ω / cm 2,

Wherein the width (W3) of the metalic contact portion (10) and the width (W1) of the first operating region (30) are 0.2 to 0.5 times the entire width (W) of the dielectric (1) Deposited film. A fixed portion 161 located below the housing 150 of the capacitor for an automotive inverter is fixed to the bottom surface 210 of the inverter case by fastening means on the bottom surface 210 of the inverter case 200,
A cooling means (300) is provided on the bottom surface (210) of the case to cool the inverter case (200)
The heat generated inside the capacitor is conducted to the bottom surface 210 of the inverter case which is in contact with the bottom wall portion 150a and cooled by the low temperature of the cooling means 300;

The capacitor for an automotive inverter includes:
A dielectric part 110 formed using a deposition film and having first and second metallizations 111 and 112 formed thereon;
A first bus bar 120 having a first body plate 121 electrically connected to the first metal plate 111 and the first contact part 123 of the dielectric part 110, And the second body plate 131 is electrically connected to the second body board 121 via the second bus bar 121. The second body board 131 is electrically connected to the second body board 121 via the second contact portion, (130);
A housing 150 having the built-in space between the upper wall portion 150b and the lower wall portion 150a with the dielectric portion 110 and the bus bar joint 140 installed therein;
And a mother fixing unit 160 protruding from the lower part of the housing 150 to the outer periphery and having a fixed part 161 through which the fixing unit passes,

The fixed portion 161 located at the lower portion of the housing 150 is fixed to the bottom of the inverter case by the fastening means and the heat generated at the bus bar combination body 140 contacts the lower wall portion 150a at a low temperature Lt; / RTI >

Wherein the deposition film is formed by depositing a metal and stacking the two films so as to face each other in a pair,
A metallic contact portion 10 for energizing a metallic capacitor of a capacitor is formed at one side end 1a of the dielectric 1 in the width direction by metal deposition and a metal is not deposited at the other end 1b in the width direction of the dielectric 1 A margin portion 20 is formed and a metal is deposited between the metal contact portion 10 and the margin portion 20 to form an operation region A,
The operating region A includes a first operating region 30 located on one side in the width direction of the dielectric 1 and adjacent to the metallic contact 10,
And a second operating region (40) located on the other side in the width direction of the dielectric (1) and adjacent to the margin portion (20)
The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30,

The deposition thickness t0 of the metalic contact portion 10 is thicker than the deposition thickness t1 of the first operation region 30,
The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40 of the second operating region 40,

The first operation region 30 of the upper deposition film 100 and the first operation region 30 of the lower deposition film 200 located below the upper deposition film 100 in the width direction are formed so as not to overlap with each other And the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100 A heat dissipation improved inverter system with a three - stage evaporated film capacitor. 5. The method of claim 4,
Characterized in that a thermal pad or thermal grease is interposed between the lower wall of the housing (150) and the inner bottom surface (210) of the inverter case for thermal conductivity enhancement.
KR1020150132766A 2015-09-21 2015-09-21 3 Step Vacuum Metallizing Coating Film Capacitor, and Inverter system KR101807243B1 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190069963A (en) * 2017-12-12 2019-06-20 현대모비스 주식회사 DC capacitors and discharge resistors of vehicle inverter
CN110895990A (en) * 2018-09-13 2020-03-20 株式会社电装 Capacitor device
KR102398734B1 (en) * 2022-01-11 2022-05-17 (주)뉴인텍 Low Inductance Type Capacitor
CN114552895A (en) * 2020-11-19 2022-05-27 日本电产株式会社 Drive device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190069963A (en) * 2017-12-12 2019-06-20 현대모비스 주식회사 DC capacitors and discharge resistors of vehicle inverter
CN110895990A (en) * 2018-09-13 2020-03-20 株式会社电装 Capacitor device
CN110895990B (en) * 2018-09-13 2024-01-23 株式会社电装 Capacitor device
CN114552895A (en) * 2020-11-19 2022-05-27 日本电产株式会社 Drive device
CN114552895B (en) * 2020-11-19 2024-04-16 日本电产株式会社 Driving device
KR102398734B1 (en) * 2022-01-11 2022-05-17 (주)뉴인텍 Low Inductance Type Capacitor

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