KR20170026730A - Transparent conductive substrate using pvd and its fabrication method - Google Patents

Transparent conductive substrate using pvd and its fabrication method Download PDF

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KR20170026730A
KR20170026730A KR1020150120792A KR20150120792A KR20170026730A KR 20170026730 A KR20170026730 A KR 20170026730A KR 1020150120792 A KR1020150120792 A KR 1020150120792A KR 20150120792 A KR20150120792 A KR 20150120792A KR 20170026730 A KR20170026730 A KR 20170026730A
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thin film
transparent
film layer
oxide
transparent conductive
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이철용
박홍철
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이철용
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes

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Abstract

The present invention relates to a transparent conductive substrate using physical vapor deposition and a method of manufacturing the transparent conductive polymer substrate, and a method of manufacturing the transparent conductive polymer substrate using physical vapor deposition, wherein a first transparent oxide material is deposited on the transparent soft polymer base material, A metal layer deposited on the first oxide thin film layer using platinum (Pt) or palladium (Pd) using physical vapor deposition; and a second transparent oxide material deposited on the metal layer using physical vapor deposition The second oxide thin film layer can significantly improve conductivity, light transmittance and high-temperature stability.

Description

TECHNICAL FIELD [0001] The present invention relates to a transparent conductive substrate using physical vapor deposition and a method of manufacturing the transparent conductive substrate.

The present invention relates to a transparent conductive substrate using physical vapor deposition capable of dramatically improving conductivity, light transmittance, and high-temperature stability by depositing a transparent conductive thin film on a substrate using physical vapor deposition (PVD: Physical Vapor Deposition) And a manufacturing method thereof.

As is well known, electronic devices such as computers, home appliances, and communication devices have been digitized and rapidly upgraded, and various displays have been urgently required.

The electrode material for a display used for realizing such a variety of displays should not only exhibit a transparent but low resistance value, but also should not be short-circuited or changed in surface resistance even at a high temperature.

As described above, a transparent electrode is used as an essential component used in various devices such as a touch panel of a display, a solar cell, a display device, etc. Recently, a lot of attention has been paid to a flexible portable device which can be bent by using a transparent electrode It is concentrated.

However, in the case of an oxide-based material used as a transparent conductive thin film, high-temperature stability does not meet the practical use requirement of a flexible device. For example, an electrochromic device applied to a smart window is used in a construction window glass, Temperature stability of the solar cell is very important factor. In the case of a flexible solar cell, development of a device having excellent characteristics that can operate at a high temperature in order to utilize solar energy effectively is required.

Accordingly, there is a need for research and development of a transparent conductive thin film excellent in high-temperature stability applicable to various flexible devices.

1. Korean Patent Laid-Open No. 10-2001-0028341 (Apr. 25, 2001): Low-temperature production method of transparent conductive thin film using powder target 2. Korean Registered Patent No. 10-1205005 (Registered on November 20, 2012): Transparent Conductive Substrate and Manufacturing Method Thereof

The present invention relates to a transparent conductive polymer substrate which is formed by depositing a transparent conductive thin film including a first oxide thin film layer, a metal layer, and a second oxide thin film layer on a transparent flexible polymer substrate by using physical vapor deposition (PVD), thereby improving conductivity, light transmittance, And a method of manufacturing the transparent conductive substrate using the vapor deposition method.

The present invention also satisfies the requirements of conductivity, light transmittance and high temperature stability by coating a metal layer of platinum (Pt) or palladium (Pd), which is excellent in conductivity and high temperature stability, between the first oxide thin film layer and the second oxide thin film layer A transparent conductive substrate using physical vapor deposition which can be effectively applied to a flexible device such as an electrochromic device for a smart window, a flexible display, and a transparent electrode for a flexible solar cell, and a manufacturing method thereof.

The objects of the embodiments of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description .

According to an aspect of the present invention there is provided a method of fabricating a transparent flexible polymer substrate, comprising: forming a first transparent oxide material on a transparent flexible polymeric parent material by using a transparent soft polymer parent material and a physical vapor deposition; A metal layer having platinum (Pt) or palladium (Pd) deposited on top of the oxide thin film layer and a second oxide thin film layer on which a second transparent oxide material is deposited using physical vapor deposition A transparent conductive substrate may be provided.

According to another aspect of the present invention, there is provided a method for fabricating a thin film transistor, comprising: depositing a first oxide thin film layer with a first transparent oxide material using physical vapor deposition on top of a transparent soft polymer parent material; Depositing a metal layer with platinum (Pt) or palladium (Pd) on the metal layer with a second transparent oxide material using physical vapor deposition; and depositing a second oxide thin film layer on top of the metal layer with physical vapor deposition A method of manufacturing a transparent conductive substrate using the same can be provided.

The present invention relates to a transparent conductive polymer substrate which is formed by depositing a transparent conductive thin film including a first oxide thin film layer, a metal layer, and a second oxide thin film layer on a transparent flexible polymer substrate by using physical vapor deposition (PVD), thereby improving conductivity, light transmittance, .

The present invention also satisfies the requirements of conductivity, light transmittance and high temperature stability by coating a metal layer of platinum (Pt) or palladium (Pd), which is excellent in conductivity and high temperature stability, between the first oxide thin film layer and the second oxide thin film layer It can be effectively applied to flexible devices such as electrochromic devices for smart windows, flexible displays, and transparent electrodes for flexible solar cells.

Figure 1 illustrates a transparent conductive substrate fabricated using physical vapor deposition according to one embodiment of the present invention,
FIGS. 2A to 2C are views illustrating a process of fabricating a transparent conductive substrate using physical vapor deposition according to another embodiment of the present invention,
3 is a view illustrating a transparent conductive substrate on which a transparent conductive thin film is deposited according to an embodiment of the present invention,
4A and 4B are diagrams for explaining heat resistance analysis results of a transparent conductive thin film manufactured according to an embodiment of the present invention.

Advantages and features of embodiments of the present invention and methods of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The following terms are defined in consideration of the functions in the embodiments of the present invention, which may vary depending on the intention of the user, the intention or the custom of the operator. Therefore, the definition should be based on the contents throughout this specification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 1 illustrates a transparent conductive substrate fabricated using physical vapor deposition according to one embodiment of the present invention.

Referring to FIG. 1, a transparent conductive substrate using physical vapor deposition according to an exemplary embodiment of the present invention includes a transparent soft polymer base material 110, a first oxide thin film layer 120, a metal layer 130, a second oxide thin film layer 140 ), And the like.

The transparent soft polymer base material 110 may be a transparent soft polymer used for manufacturing a flexible device and may be made of a transparent flexible polymer such as PI (Polyimide), PC (Polycarbonate), PET (Polyethyleneterephthalate), PAR (Polyarylate), PES Polyethylenenaphthalate) and FPR (Glass Fiber Reinforced Plastic).

The transparent soft polymer base material 110 may be pretreated to remove adsorbed gas particles, contaminants, and the like existing on the surface of the transparent soft polymer base material 110 before the first oxide thin film layer 120 is deposited. 110) a may be performed using an ion beam and then seated within the vacuum chamber through a low vacuum and high vacuum pump maintains a vacuum of 5x10 -5 torr to about 5x10 -4 torr in the initial degree of vacuum of 1x10 -5 torr.

Specifically, the pre-treatment is performed by injecting an argon (Ar) mixed gas into the vacuum chamber, and maintaining a vacuum degree of 5 × 10 -5 torr to 5 × 10 -4 torr, to approximately 380-420 W (preferably 400 W: 20 A × 20 V) Filament power in the range of approximately 160-200 W (preferably, 180 W: 2A x 90 V), for 3 to 5 minutes.

Here, the ion beam apparatus can use an end-Hall type apparatus that generates hot plasma by discharging thermoelectrons from the filament, and accelerates and expels ions present in the plasma.

The first oxide thin film layer 120 may be formed by depositing a first transparent oxide material on the transparent soft polymer base material 110 using physical vapor deposition such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO Al doping zinc oxide (GZO), and Ga doping zinc oxide (GZO).

The first oxide thin film layer 120 is deposited by a sputtering method. The first oxide thin film layer 120 may be deposited by generating plasma power by applying power to a plasma generating power source connected to a sputtering target to which the first transparent oxide material is attached.

Through the above-described deposition process, the first oxide thin film layer 120 can be controlled to have a sheet resistance in the range of 5-200 nm and a sheet resistance in the range of 5-100 OMEGA / square.

Platinum (Pt) or palladium (Pd) is deposited on the first oxide thin film layer 120 by physical vapor deposition, and the metal layer 130 is deposited by a sputtering method. An argon (Ar) gas And then plasma is generated by applying power to a plasma generating power source connected to a sputtering target to which platinum (Pt) or palladium (Pd) is attached.

Through the deposition process as described above, the metal layer 130 can be controlled to have a sheet resistance in the range of 2-20 nm and a sheet resistance in the range of 2-50 Ω / □.

The second oxide thin film layer 140 is formed by using physical vapor deposition to deposit a second transparent oxide material on the metal layer 130. The second transparent oxide material may be a second transparent material including any one selected from ITO, IZO, AZO, and GZO Can be deposited using an oxide material.

The second oxide thin film layer 140 is deposited by a sputtering method. The second oxide thin film layer 140 may be deposited by generating plasma power by applying power to a plasma generating power source connected to a sputtering target to which a second transparent oxide material is attached.

Through the above-described deposition process, the second oxide thin film layer 140 can be controlled to have a sheet resistance in the range of 5-200 nm and a sheet resistance in the range of 5-100 OMEGA / square.

Accordingly, the present invention provides a method of manufacturing a transparent conductive polymer substrate by depositing a transparent conductive thin film including a first oxide based thin film layer, a metal layer, and a second oxide based thin film layer on a transparent flexible polymer base material by physical vapor deposition (PVD) Can be dramatically improved.

The present invention also satisfies the requirements of conductivity, light transmittance and high temperature stability by coating a metal layer of platinum (Pt) or palladium (Pd), which is excellent in conductivity and high temperature stability, between the first oxide thin film layer and the second oxide thin film layer It can be effectively applied to flexible devices such as electrochromic devices for smart windows, flexible displays, and transparent electrodes for flexible solar cells.

Next, in the fabrication of the transparent conductive substrate having the above-described structure, the first oxide thin film layer is deposited on the transparent soft polymer base material by physical vapor deposition, and a metal thin film layer having excellent conductivity and high temperature stability A process of depositing a second oxide thin film layer using physical vapor deposition on a metal layer will be described.

FIGS. 2A to 2C are views illustrating a process of manufacturing a transparent conductive substrate using physical vapor deposition according to another embodiment of the present invention.

2A to 2C, the transparent soft polymer base material 110 may be selected from among PI, PC, PET, PAR, PES, PEN, and FPR, placed in a vacuum chamber, while maintaining a degree of vacuum of 5x10 -5 torr to about 5x10 -4 torr in the initial degree of vacuum of 1x10 -5 torr may perform a pre-treatment using an ion beam.

Specifically, the pre-treatment is performed by injecting an argon (Ar) mixed gas into the vacuum chamber, and maintaining a vacuum degree of 5 × 10 -5 torr to 5 × 10 -4 torr, while maintaining approximately 380-420 W (preferably 400 W: 20 A × 20 V) Filament power in the range of approximately 160-200 W (preferably, 180 W: 2A x 90 V), for 3 to 5 minutes.

Here, the ion beam apparatus can use an end-Hall type apparatus that generates hot plasma by discharging thermoelectrons from the filament, and accelerates and expels ions present in the plasma.

2A, the first oxide thin film layer 120 may be deposited on the transparent soft polymer base material 110 using a first transparent oxide material using physical vapor deposition. Here, the first transparent oxide material may include any one of ITO, IZO, AZO, and GZO.

The first oxide thin film layer 120 is deposited by a sputtering method. The first oxide thin film layer 120 may be deposited by generating plasma power by applying power to a plasma generating power source connected to a sputtering target to which the first transparent oxide material is attached. Through the deposition process, the first oxide thin film layer 120 can be controlled to have a sheet resistance in the range of 5-200 nm and a sheet resistance in the range of 5-100 OMEGA / square.

Next, as shown in FIG. 2B, the metal layer 130 may be deposited on the first oxide thin film layer 120 using platinum (Pt) or palladium (Pd) using physical vapor deposition.

The metal layer 130 is deposited by a sputtering method. After argon (Ar) gas is injected as a discharge gas, power is applied to a plasma generation power source connected to a sputtering target having platinum (Pt) or palladium (Pd) And the metal layer 130 can be controlled to have a sheet resistance in the range of 2-20 nm and a sheet resistance in the range of 2-50 Ω / □ through the deposition process as described above.

The second oxide thin film layer 140 may then be deposited with a second transparent oxide material using physical vapor deposition on top of the metal layer 130, as shown in FIG. 2C. Here, the second transparent oxide material may include any one of ITO, IZO, AZO, and GZO.

The second oxide thin film layer 140 is deposited by a sputtering method. The second oxide thin film layer 140 may be deposited by generating a plasma power by applying power to a plasma generating power source connected to a sputtering target to which the second transparent oxide material is attached. Through the deposition process, the second oxide thin film layer 140 can be controlled to have a sheet resistance ranging from 5 to 200 Ω / □ and a sheet resistance ranging from 5 to 100 Ω / □.

Accordingly, the present invention provides a method of manufacturing a transparent conductive polymer substrate by depositing a transparent conductive thin film including a first oxide based thin film layer, a metal layer, and a second oxide based thin film layer on a transparent flexible polymer base material by physical vapor deposition (PVD) Can be dramatically improved.

The present invention also satisfies the requirements of conductivity, light transmittance and high temperature stability by coating a metal layer of platinum (Pt) or palladium (Pd), which is excellent in conductivity and high temperature stability, between the first oxide thin film layer and the second oxide thin film layer It can be effectively applied to flexible devices such as electrochromic devices for smart windows, flexible displays, and transparent electrodes for flexible solar cells.

Next, a transparent conductive substrate sample on which a transparent conductive thin film having a first oxide thin film layer, a metal layer, and a second oxide thin film deposited on the transparent soft polymer base material is deposited as described above, and then a high temperature characteristic analysis The results are described below.

FIG. 3 is a view illustrating a transparent conductive substrate on which a transparent conductive thin film is deposited according to an embodiment of the present invention. FIGS. 4A and 4B illustrate the results of thermal resistance analysis of a transparent conductive thin film manufactured according to an embodiment of the present invention FIG.

Referring to FIG. 3 and FIGS. 4A and 4B, a transparent conductive substrate sample on which a transparent conductive thin film is deposited is prepared by depositing ITO / Pt / ITO on PET. As a base material, PET having a thickness of 100 μm and a transmittance of 88% And the substrate is placed in a vacuum chamber having an initial degree of vacuum of 1 x 10 -5 torr, and the ion beam plasma power is adjusted to 100 V x 2.0 A while the vacuum degree of 3 x 10 -4 torr is maintained.

When the pretreatment was completed, the ITO was set as a sputtering target (target width: 1790 cm 2), and the degree of vacuum was maintained at 1.5 × 10 -3 torr in an atmosphere of argon (Ar) of 0.5 vol% and oxygen (O 2) , The ITO thin film can be deposited to have a sheet resistance of 65-70 Ω / □ at a thickness of 30 nm for 5 minutes while applying a DC power of 4.3 KW.

Next, Pt was sputtered (target width: 1790 cm 2), and the degree of vacuum was maintained at 1.0 x 10 -3 torr in an argon (Ar) gas atmosphere of 99.9998 vol% The Pt thin film can be deposited to have a transmittance of 88% at a thickness of nm and a sheet resistance of 25-30 Ω / □.

Finally, the ITO was set as a sputtering target (target width: 1790 cm 2), the degree of vacuum was maintained at 1.5 x 10 -3 torr in an atmosphere of argon (Ar) and oxygen (O 2) gas of 99.5 vol% The ITO thin film can be deposited to have a sheet resistance of 65-70 Ω / □ at a thickness of 30 nm for 5 minutes while applying 4.3 KW.

The transparent conductive substrate samples prepared as described above showed that electric conduction was 3 times or more at the same transmittance and that the high temperature stability was able to withstand the electric conductivity without strain for 120 hours at 100 ° C when compared with the transparent conductive thin film of the conventional ITO single thin film Respectively.

4A and 4B illustrate the results of the heat resistance test for the ITO thin film. The ITO single thin film has a resistance strain of 46% and a transparent conductive thin film having a structure of ITO (30 nm) / Ag (5 nm) / ITO (30 nm) The resistance strain of the transparent conductive thin film having ITO / Pt (or Pd) / ITO structure of the present invention exhibits a very high resistance to thermal deformation of 7.2 to 7.9% .

The substrate prepared as described above not only remarkably increases the electrical conductivity compared with the conventional oxide based transparent conductive thin film, but also exhibits high temperature stability of 100 ° C or higher. Therefore, the substrate can be used as a transparent conductive thin film for smart windows, It is expected that it can be widely used for the manufacture of flexible solar cell devices which should be stable at high temperature.

Meanwhile, in the embodiments of the present invention as described above, sputtering physical vapor deposition is used. However, it is needless to say that the present invention can be performed by ion plating, vacuum deposition, or the like in addition to the sputtering method.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be readily apparent that such substitutions, modifications, and alterations are possible.

110: transparent soft polymer base material
120: First oxide thin film layer
130: metal layer
140: Second oxide thin film layer

Claims (11)

A transparent soft polymer base material,
A first transparent oxide material is deposited on top of the transparent flexible polymeric parent material by physical vapor deposition,
A metal layer deposited on the first oxide thin film layer with platinum (Pt) or palladium (Pd) using physical vapor deposition;
A second transparent oxide material is deposited on the second oxide thin film layer on top of the metal layer using physical vapor deposition
≪ / RTI > wherein the transparent conductive substrate is a transparent conductive substrate.
The method according to claim 1,
Wherein the first oxide thin film layer and the second oxide thin film layer are controlled to have a sheet resistance in the range of 5 - 100 Ω / □ and a thickness in the range of 5 - 200 nm, respectively, by physical vapor deposition.
The method according to claim 1,
Wherein the metal layer is controlled to have a sheet resistance in the range of 2-20 nm and a sheet resistance in the range of 2-50 Ω / □.
4. The method according to any one of claims 1 to 3,
The first transparent oxide material and the second transparent oxide material may be at least one selected from the group consisting of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Al Doping Zinc Oxide), and GZO (Ga Doping Zinc Oxide) ≪ / RTI > wherein the transparent conductive substrate is a transparent conductive substrate.
4. The method according to any one of claims 1 to 3,
The transparent soft polymer base material may include any one selected from among Polyimide (PI), Polycarbonate (PC), Polyethyleneterephthalate (PET), Polyarylate (PAR), Polyethersulfone (PES), Polyethylenaphthalate (PEN), and Glass Fiber Reinforced Plastic A transparent conductive substrate using physical vapor deposition.
Depositing a first oxide thin film layer with a first transparent oxide material using physical vapor deposition on top of the transparent soft polymeric parent material;
Depositing a metal layer with platinum (Pt) or palladium (Pd) on top of the first oxide thin film layer using physical vapor deposition;
Depositing a second oxide thin film layer on top of said metal layer with a second transparent oxide material using physical vapor deposition
Wherein the transparent conductive substrate is a transparent substrate.
The method according to claim 6,
The method for manufacturing a transparent conductive substrate includes:
Performing a pretreatment using an ion beam in an argon (Ar) mixed gas atmosphere before the step of depositing the first oxide thin film layer
Wherein the transparent conductive substrate is a transparent substrate.
8. The method of claim 7,
Wherein the depositing of the first oxide thin film layer and the deposition of the second oxide thin film layer comprises depositing the first oxide thin film layer and the second oxide thin film layer in a thickness range of 5-200 nm, Wherein the substrate is controlled to have a sheet resistance.
8. The method of claim 7,
Wherein the step of depositing the metal layer comprises controlling the metal layer to have a sheet resistance in the range of 2-20 < RTI ID = 0.0 > OMEGA / < / RTI &
10. The method according to any one of claims 6 to 9,
The first oxide thin film layer and the second oxide thin film layer may be formed by selecting any one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Al Doping Zinc Oxide) and GZO (Ga Doping Zinc Oxide) A method of manufacturing a transparent conductive substrate using physical vapor deposition to be deposited.
10. The method according to any one of claims 6 to 9,
The transparent soft polymer matrix includes any one selected from the group consisting of polyimide (PI), polycarbonate (PC), polyethyleneterephthalate (PET), polyarylate (PAR), polyethersulfone (PES), polyethylenenaphthalate (PEN), and glass fiber reinforced plastic Wherein the transparent conductive substrate is formed by physical vapor deposition.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112435776A (en) * 2020-09-08 2021-03-02 浙江长宇新材料股份有限公司 Flexible conductive film and preparation method thereof
US20220199282A1 (en) * 2020-12-19 2022-06-23 Feng Chia University Flexible transparent conductive composite film and manufacturing method thereof

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KR101205005B1 (en) 2012-05-03 2012-11-27 한국기계연구원 Transparent and conductive substrate and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
CN112435776A (en) * 2020-09-08 2021-03-02 浙江长宇新材料股份有限公司 Flexible conductive film and preparation method thereof
CN112435776B (en) * 2020-09-08 2021-10-19 浙江柔震科技有限公司 Flexible conductive film and preparation method thereof
US20220199282A1 (en) * 2020-12-19 2022-06-23 Feng Chia University Flexible transparent conductive composite film and manufacturing method thereof
US12051521B2 (en) * 2020-12-19 2024-07-30 Feng Chia University Flexible transparent conductive composite film and manufacturing method thereof

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