KR20170018239A - Flip type nitride semiconductor light emitting diode and method of manufacturing the same - Google Patents

Flip type nitride semiconductor light emitting diode and method of manufacturing the same Download PDF

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Publication number
KR20170018239A
KR20170018239A KR1020150111661A KR20150111661A KR20170018239A KR 20170018239 A KR20170018239 A KR 20170018239A KR 1020150111661 A KR1020150111661 A KR 1020150111661A KR 20150111661 A KR20150111661 A KR 20150111661A KR 20170018239 A KR20170018239 A KR 20170018239A
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South Korea
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light emitting
layer
bonding pad
emitting structure
type nitride
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KR1020150111661A
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Korean (ko)
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김동우
송정섭
김현규
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

According to the present invention, disclosed are a flip type nitride semiconductor light emitting device and a manufacturing method thereof. The light emitting device comprises: a light emitting structure having a first conductive type nitride layer, an active layer, and a second conductive type nitride layer sequentially stacked on a substrate; a reflective layer and a metal diffusion barrier layer sequentially stacked on the second conductive type nitride layer of the light emitting structure; a first bonding pad electrically connected to the light emitting structure and surrounding a boundary rather than the central part of the light emitting structure; a first bump electrically connected to the first bonding pad and formed on one side of the light emitting diode structure; and a second bump electrically connected to the reflective layer or the metal diffusion barrier layer and formed on the other surface of the light emitting structure.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a flip nitride semiconductor light emitting device,

The present invention relates to a nitride semiconductor light emitting device and a manufacturing method thereof, and more particularly, to a flip type nitride semiconductor light emitting device and a manufacturing method thereof.

[0002] A nitride semiconductor light emitting device is a device using a light emitting phenomenon occurring when electrons and holes are re-combined. As a typical light emitting device, there is a nitride semiconductor light emitting device using a nitride semiconductor such as GaN. The nitride semiconductor light emitting device has a wide band gap and can realize various color light, and has excellent thermal stability and is applied to many fields.

In the case of such a light emitting element, the package is commercialized. The light emitting device package is usually manufactured by the following process. First, a light emitting device is mounted on a package substrate, and an electrode provided in the light emitting device is electrically connected to the external electrode through a wiring process. Then, an encapsulant containing a fluorescent material is coated on the package substrate and cured to mold the light emitting device.

In recent years, efforts have been made to use a flip-type LED as a light emitting device to shorten an electrical connection path between a light emitting device and a package substrate, thereby increasing the integration and power of the module.

A related prior art is Korean Patent Laid-Open Publication No. 10-2010-0038937 (Apr. 15, 2010), which discloses a light emitting device package.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a flip-type nitride semiconductor light-emitting device and a flip-type nitride semiconductor light-emitting device capable of solving the problem of leakage current caused by a micro crack and a pin hole, which are problems in a metal-insulator- And a manufacturing method thereof.

According to an aspect of the present invention, there is provided a flip-type nitride semiconductor light emitting device including: a light emitting structure having a first conductive type nitride layer, an active layer, and a second conductive type nitride layer sequentially stacked on a substrate; A reflective layer and a metal diffusion barrier layer sequentially formed on the second conductivity type nitride layer of the light emitting structure; A first bonding pad electrically connected to the light emitting structure and surrounding the edge except for a central portion of the light emitting structure; A first bump electrically connected to the first bonding pad and formed on one side of the light emitting structure; And a second bump electrically connected to the reflective layer or the metal diffusion barrier layer and formed on the other side of the light emitting structure.

According to another aspect of the present invention, there is provided a method for fabricating a flip type nitride semiconductor light emitting device, comprising: (a) sequentially laminating a first conductive nitride layer, an active layer, and a second conductive nitride layer on a substrate, ; (b) removing a part of the light emitting structure to form an etch groove; (c) stacking a reflective layer and a metal diffusion barrier layer on the second conductive nitride layer of the light emitting structure in order; (d) an insulating layer covering the light emitting structure and the metal diffusion barrier layer, the first contact hole exposing a part of the light emitting structure, and the second contact hole exposing a part of the reflective layer or the metal diffusion barrier layer, ; (e) forming a first bonding pad on the insulating layer, the first bonding pad being electrically connected to the light emitting structure via the first contact hole; (f) a third contact hole covering the first bonding pad and the insulating layer, the third contact hole exposing a part of the first bonding pad, and the fourth contact hole exposing a part of the reflective layer or the metal diffusion barrier layer Forming a layer; And (g) a first bump electrically connected to the first bonding pad via the third contact hole on the protective layer, and a second bump electrically connected to a part of the reflective layer or the metal diffusion barrier layer via the fourth contact hole. And forming a second bump connected to the second bump.

A flip type nitride semiconductor light emitting device and a method of manufacturing the same according to the present invention are characterized in that a first bonding pad is formed so as to surround an edge excluding a central portion of the light emitting structure and a second bonding pad is formed at an inner center of the first bonding pad, Since the first and second bonding pads are disposed so as not to overlap each other with the insulating layer interposed therebetween, micro cracks and pin holes, which are problems in a metal-insulator-metal (MIM) Since the first bonding pad is formed along the four side edges of the light emitting structure, the formation area of the first bonding pad is reduced so that a low current defect and a reverse current are reduced in terms of yield. There is a structural advantage to improve defects.

In the flip-type nitride semiconductor light emitting device and the method of manufacturing the same, the first bonding pad is formed to surround the four sides of the light emitting structure, so that the flip- It is possible to prevent the first bonding pad from being damaged, thereby improving the pick-up property and the alignment degree, thereby improving the reliability of the surface mounting.

In the flip type nitride semiconductor light emitting device and the method of manufacturing the same according to the embodiment of the present invention, the second bonding pad is formed on at least a part of the upper side or the inner side of the first bonding pad, And the second bumps are electrically connected through the second bonding pads and the fourth contact holes.

1 is a plan view of a flip type nitride semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line AA 'of FIG. 1; FIG.
3 is a cross-sectional view taken along line BB 'of FIG.
4 is a cross-sectional view taken along line CC 'in FIG.
FIGS. 5 to 12 are cross-sectional views sequentially illustrating the cross-section taken along line AA 'of the flip-type nitride semiconductor light-emitting device of FIG. 1 according to a manufacturing process.
FIGS. 13 to 20 are cross-sectional views sequentially showing the cross-section taken along line BB 'of the flip-type nitride semiconductor light emitting device of FIG. 1 according to a manufacturing process.
FIGS. 21 to 28 are cross-sectional views sequentially showing cross-sections taken along the CC 'line of the flip-type nitride semiconductor light emitting device of FIG. 1 according to the manufacturing process.
29 is a plan view of a flip type nitride semiconductor light emitting device according to a modification of the present invention.
30 is a plan view showing the first bonding pad of FIG. 29;
31 is a plan view of a flip type nitride semiconductor light emitting device according to another modification of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, a flip-type nitride semiconductor light emitting device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of a flip type nitride semiconductor light emitting device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line AA 'of FIG. 1, And FIG. 4 is a cross-sectional view taken along line CC 'of FIG.

1 to 4, a flip type nitride semiconductor light emitting device 100 according to an embodiment of the present invention includes a substrate 110, a light emitting structure 120, a transparent conductive layer 130, a reflective layer 140, A diffusion barrier layer 150, a first bonding pad 160, a second bonding pad 162, a first bump 170, and a second bump 172. In addition, the flip type nitride semiconductor light emitting device 100 according to the embodiment of the present invention further includes an insulating layer 155 and a protective layer 165.

The substrate 110 may be formed of a material suitable for growing a nitride semiconductor single crystal. Typically, a sapphire substrate is exemplified. In addition to the sapphire substrate, zinc oxide (ZnO), gallium nitride (GaN), silicon (Si), silicon carbide (SiC), aluminum nitride ), And the like.

The light emitting structure 120 has a first conductive type nitride layer (not shown), an active layer (not shown), and a second conductive type nitride layer (not shown), which are sequentially stacked on the substrate 110.

The first conductive type nitride layer is formed by alternately forming a first layer (not shown) made of AlGaN doped with silicon (Si) and a second layer (not shown) made of undoped GaN But it is not limited thereto.

An active layer is formed on the first conductive type nitride layer. This active layer has a multi-quantum well (MQW) structure in which a single quantum well structure or a plurality of quantum well layers and a quantum barrier layer are alternately stacked between the first conductive type nitride layer and the second conductive type nitride layer But is not limited thereto.

The second conductive type nitride layer is formed by alternately stacking a first layer (not shown) of p-type AlGaN doped with Mg with a p-type dopant and a second layer (not shown) made of p- And may have a stacked structure formed as a layer.

The transparent conductive layer 130 may be formed on the second conductive nitride layer of the light emitting structure 120. [ This transparent conductive layer 130 is not necessarily formed, but may be omitted if necessary. The transparent conductive layer 130 is made of a transparent and conductive material, and may include a metal, for example, a complex layer of nickel (Ni) and gold (Au). The transparent conductive layer 130 may include an oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO) Indium Aluminum Zinc Oxide), GZO (Gallium Zinc Oxide), IGO (Indium Gallium Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Aluminum Tin Oxide) Layer made of at least one material selected from the group consisting of CIO (Cupper Indium Oxide), MIO (Magnesium Indium Oxide), MgO, ZnO, In 2 O 3 , TiTaO 2 , TiNbO 2 , TiOx, RuOx and IrOx, .

The reflective layer 140 is formed on the second conductive nitride layer or the transparent conductive layer 130 of the light emitting structure 120. The reflective layer 140 may have a thickness of 500 to 4000 Å, more preferably 1000 to 3000 Å. When the thickness of the reflective layer 140 is less than 500 ANGSTROM, it may be difficult to properly exhibit its function as a reflective film. On the contrary, when the thickness of the reflective layer 140 is more than 4000 ANGSTROM, it is not desirable to increase the manufacturing cost without further effect on the thickness increase, and also to result in the reverse of the thin and light shortening.

The reflective layer 140 may be made of a material selected from the group consisting of Ti, Zn, Nb, W, Sn, Zr, Sr, (Ni), silicon (Si), silver (Ag), aluminum (Al), palladium (Pd), ruthenium (Ru), platinum (Pt) and rhodium , A compound including at least one of these, a mixture, an oxide, a nitride and a fluoride.

A metal diffusion barrier layer 150 is deposited on the reflective layer 140. The metal diffusion barrier layer 150 may be selected from one or more compounds selected from among Cr, Ni, Pt, Ti, Au, Cu, Ir and W, or a compound, , A nitride, and a fluoride.

The metal diffusion barrier layer 150 serves to prevent the characteristics of the reflective layer 140, particularly the reflectivity and the contact resistance, from being lowered by melting the respective materials at the interface between the reflective layer 140 and the second bonding pad 162 do.

The first bonding pad 160 is electrically connected to the light emitting structure 120 and is formed so as to surround the edge except the central portion of the light emitting structure 120. The second bonding pad 162 is electrically separated from the first bonding pad 160. The second bonding pad 162 is formed on at least a part of the upper side or the inner side of the first bonding pad 160.

The first and second bonding pads 160 and 162 may be formed by E-beam deposition, thermal evaporation, sputtering deposition, or the like. The first and second bonding pads 160 and 162 may be formed of the same material by using the same mask.

More specifically, the first bonding pad 160 includes a first bonding pad body portion 160a formed to surround the four sides of the light emitting structure 120, and a second bonding pad body portion 160b surrounding the four sides of the light emitting structure 120 120 and a first bonding pad protrusion 160b that is alternately staggered and spaced apart from the second bonding pad 162. [

The first bonding pad 160 is formed to surround the four side edges of the light emitting structure 120 and the second bonding pad 162 is formed at the inner center of the first bonding pad 160, The second bonding pads 160 and 162 may be disposed so that they do not overlap each other in the cross-sectional view.

Generally, an eject pin (not shown) of the die attach apparatus is disposed at a position corresponding to the central portion of the substrate 110 during the die attach process. Since the eject pins of the die attach device are made of a very sharp metal, the first bonding pad 160 and the second bonding pad 162 are disposed in a superposed manner at the center of the light emitting structure 120 The first bonding pad 160, The second bonding pad 162 or the insulating layer 155 may be cracked or damaged.

In contrast, in the present invention, since the first bonding pad 160 is formed to surround the four sides of the light emitting structure 120, the first bonding pad 160 is damaged by the eject pin of the die attach device during the die attach process Thereby improving the pick-up property and the alignment degree, thereby improving the reliability of the surface mounting.

The first bump 170 is electrically connected to the first bonding pad 160 and is formed on one side of the light emitting structure 120. The second bump 172 is electrically connected to the second bonding pad 162 and is formed on the other side of the light emitting structure 120. The first and second bumps 170 and 172 are disposed on one side and the other side of the light emitting structure 120 so that at least the first and second bumps 170 and 172 are formed in the central portion of the light emitting structure 120, Is not formed.

The first and second bumps 170 and 172 are connected to the first bonding pad 160 and the second bonding pad 162 and the light emitting device 100 is mounted on a package substrate And is formed for the purpose of attaching.

As described above, in the soldering bonding using the first and second bumps 170 and 172, compared with the conventional method using the metal wire, the electrical connection path is shortened to lower the electrical resistance, Therefore, it is possible to manufacture a high-output device capable of applying a high current.

At this time, each of the first and second bumps 170 and 172 is made of at least two or more of Cr, Ti, Pt, Au, Ag , Mo, Sn, Ni, Cu and In, / Au / Sn, Cr / Au / Sn, Ni / Sn, and Cu / Sn.

The insulating layer 155 is formed to cover the light emitting structure 120 and the metal diffusion barrier layer 150. The insulating layer 155 has a first contact hole CH1 exposing a part of the light emitting structure 120 and a second contact hole CH2 exposing a part of the metal diffusion barrier layer 150. [ The insulating layer 155 may be made of at least one selected from the group consisting of Si, Mg, Ti, Al, Zn, C, In and Sn.

At this time, the first bonding pad 160 is physically attached to the light emitting structure 120 through the first contact hole CH1. The second bonding pad 162 is electrically connected to the metal diffusion barrier layer 150 via the second contact hole CH2.

In particular, in the flip type nitride semiconductor light emitting device 100 according to the embodiment of the present invention, the first bonding pad 160 is electrically connected to the light emitting structure 120 And the second bonding pad 162 is formed on the inner side of the first bonding pad 160 so that the first and second bonding pads 160 and 162 are surrounded by the insulating layer 155, There is no fear that leakage currents due to micro cracks and pin holes, which are problems in a metal-insulator-metal (MIM) structure, are caused In addition, since the first bonding pad 160 is formed on the surface of the light emitting structure 120 Since the first bonding pad 110 is formed along the four sides of the first bonding pad 110, the formation area of the first bonding pad 110 is reduced, thereby improving the low current defects and the reverse defects in terms of the yield.

The passivation layer 165 is formed to cover the first and second bonding pads 160 and 162 and the insulating layer 155. The passivation layer 165 has a third contact hole CH3 that exposes a portion of the first bonding pad 160 and a fourth contact hole CH4 that exposes a portion of the second bonding pad 162. [ The protective layer 165 may be made of at least one selected from the group consisting of a compound including Si, Mg, Ti, Al, Zn, C, In, and Sn and an oxide as well as the insulating layer 155.

The first bump 170 is electrically connected to the first bonding pad 160 via the third contact hole CH3 and the second bump 172 is electrically connected to the fourth contact hole CH4 And is electrically connected to the second bonding pad 162 through the through-hole.

Although the second bumps 172 have been shown and described as being electrically connected to the second bonding pads 162, the present invention is not limited thereto. That is, the second bonding pad 162 may be omitted. When the second bonding pad 162 is not formed, the second bump 172 is electrically connected to the reflective layer 140 Or may be electrically connected to a portion of the metal diffusion barrier layer 150.

In particular, in the flip type nitride semiconductor light emitting device 100 according to the embodiment of the present invention, the second bonding pad 162 is formed on the light emitting structure 120 And the second bumps 172 are formed at the center of the first bonding pad 160 and the second bumps 172 are formed at the center of the first bonding pad 160, Since the second bonding pad 162 disposed at the center portion is electrically connected to the second bump 172 through the fourth contact hole CH4, the second bump 172, which is solder-bonded in the soldering process after the die attach process, It is possible to isolate the Sn diffusion region by the Sn diffusion region so that the Sn diffusion prevention can be made possible.

In the flip type nitride semiconductor light emitting device according to the above-described embodiment of the present invention, the first bonding pad is formed so as to surround the edge excluding the central portion of the light emitting structure, and the second bonding pad is formed at the inner center of the first bonding pad Since the first and second bonding pads are disposed so as not to overlap with each other with the insulating layer interposed therebetween in a cross-sectional view, micro cracks and pin holes, which are problems in a metal-insulator- The first bonding pad is not likely to cause leakage current caused by the light emitting structure The formation area of the first bonding pad is reduced, so that there is a structural advantage that a low current failure and a reverse failure can be improved in terms of yield.

Also, in the flip type nitride semiconductor light emitting device according to the embodiment of the present invention, It is possible to prevent the first bonding pad from being damaged by the eject pin of the die attach device during the die attaching process, and as a result, the pick-up property and the alignment degree are improved to improve the surface mount reliability Can be improved.

In addition, in the flip type nitride semiconductor light emitting device according to the embodiment of the present invention, The second bump is formed at the center of the inner side of the first bonding pad, The second bumps 172 are electrically connected to each other through the fourth contact holes. Accordingly, the second bumps 172, which are solder-bonded in the soldering process after the die attach process, diffusion area can be isolated, thus preventing diffusion of Sn.

Hereinafter, a method of manufacturing a flip type nitride semiconductor light emitting device according to an embodiment of the present invention will be described with reference to the accompanying drawings.

FIGS. 5 to 12 are sectional views of the flip-type nitride semiconductor light emitting device of FIG. 1, taken along the line AA ', in sequence according to a manufacturing process. FIGS. 13 to 20 are cross- FIGS. 21 to 28 are cross-sectional views taken along the line BB 'of the flip-type nitride semiconductor light emitting device of FIG. 1, Sectional view showing the process steps sequentially.

A first conductive nitride layer (not shown), an active layer (not shown) and a second conductive nitride layer (not shown) are formed on the substrate 110, as shown in FIGS. 1, 5, 13, The light emitting structure 120 is formed.

Next, a transparent conductive material layer 130a is formed on the entire upper surface of the light emitting structure 120, and a first photomask pattern PM1 is formed on the transparent conductive material layer 130a to cover the transparent conductive layer forming region do. The transparent conductive material layer 130a is not necessarily formed, but may be omitted if necessary.

At this time, the transparent conductive material layer 130a is made of a transparent and conductive material, and may include a metal, for example, a complex layer of nickel (Ni) and gold (Au). The transparent conductive material layer 130a may include an oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), AZO (Indium Gallium Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Aluminum Tin Oxide), IWO (Indium Tungsten Oxide) , A layer made of at least one material selected from the group consisting of CIO (Cupper Indium Oxide), MIO (Magnesium Indium Oxide), MgO, ZnO, In 2 O 3 , TiTaO 2 , TiNbO 2 , TiOx, RuOx and IrOx, Lt; / RTI >

As shown in FIGS. 1, 6, 14, and 22, the transparent conductive material layer 130a (FIG. 5) is etched by wet etching using the first photomask pattern PM1 to form the transparent conductive layer 130 .

Next, a part of the light emitting structure 120 exposed to the outside of the first photomask pattern PM1 is etched to form an etch groove 122. The diameter of the etching groove 122 may be 10 to 60 占 퐉, but is not limited thereto.

At this time, the etching grooves 122 are formed by selectively etching away portions of the light emitting structure 120, more specifically, the second conductive nitride layer and the active layer of the light emitting structure 120, A part of the conductive type nitride layer and the first conductive type nitride layer disposed under the active layer is exposed to the outside.

Next, as shown in Figs. 1, 7, 15, and 23, the first photomask pattern (PM1 in Fig. 6) is removed. This first mask pattern is removed by a strip process. Accordingly, the transparent conductive layer 130 under the first photomask pattern is exposed to the outside.

A second photomask pattern PM2 covering the etching groove (122 in FIG. 15) is formed on the light emitting structure 120 having the transparent conductive layer 130 formed thereon, as shown in FIGS. 1, 8, 16, A reflective material layer 140a is formed on the entire upper surface of the light emitting structure 120 on which the second photomask pattern PM2 is formed.

At this time, the reflective material layer 140a preferably has a thickness of 500 to 4000 angstroms, more preferably 1000 to 3000 angstroms. When the thickness of the reflective material layer 140a is less than 500 angstroms, it may be difficult to properly function as a reflective film. On the other hand, when the thickness of the reflective material layer 140a is more than 4000A, the thickness of the reflective material layer 140a may be increased only by increasing the manufacturing cost without further effect on the thickness increase, .

The reflective material layer 140a may be formed of a material selected from the group consisting of Ti, Zn, Nb, W, Sn, Zr, Sr, , A mixture of at least one selected from the group consisting of nickel (Ni), silicon (Si), silver (Ag), aluminum (Al), palladium (Pd), ruthenium (Ru), platinum (Pt) Or at least one selected from a compound, a mixture, an oxide, a nitride and a fluoride including at least one selected from the group consisting of a compound, a mixture, an oxide, a nitride and a fluoride.

As shown in FIGS. 1, 9, 17 and 25, the second photomask pattern (PM2 in FIG. 8) and the reflective material layer (140a in FIG. 8) on the second photomask pattern are subjected to a lift- And a reflective layer 140 is formed on the transparent conductive layer 130.

That is, only the second photomask pattern and the reflective material layer, which are sequentially stacked on the etch groove, are selectively removed by a lift-off process, and the reflective layer 140 is left on the transparent conductive layer 130 .

Next, a third photomask pattern (not shown) is formed on the light emitting structure 120 on which the reflective layer 140 is formed to cover the etch groove. Then, a light emitting structure 120 having the third photomask pattern A metal diffusion barrier material layer (not shown) is formed on the upper surface of the substrate 120.

Next, the metal diffusion barrier material layer on the third photomask pattern and the third photomask pattern is removed in a lift-off process to form a metal diffusion barrier layer 150 on the reflective layer 140.

An insulating layer 155 is formed to cover the entire surface of the light emitting structure 120 and the metal diffusion barrier layer 150, as shown in FIGS. 1, 10, 18, and 26. The insulating layer 155 may be made of at least one selected from the group consisting of Si, Mg, Ti, Al, Zn, C, In and Sn.

Next, a fourth photomask pattern (not shown) covering the insulating layer formation region is formed on the insulating layer 155, and then the insulating layer 155 is selectively etched by wet etching using the fourth photomask pattern A first contact hole CH1 for exposing a part of the light emitting structure 120 and a second contact hole CH2 for exposing a part of the reflective layer 140 or the metal diffusion barrier layer 150 are formed.

A first bonding pad 160 electrically connected to the light emitting structure 120 via a first contact hole CH1 is formed on the insulating layer 155 as shown in FIGS. 1, 11, 19, And a second bonding pad 162 electrically connected to the metal diffusion barrier layer 150 via the second contact hole CH2. At this time, the second bonding pad 162 is not necessarily formed and may be omitted.

In this step, the first bonding pad 160 is formed so as to surround the edge excluding the central portion of the light emitting structure 120, the second bonding pad 162 is electrically separated from the first bonding pad 160, And is formed in the center of the light emitting structure 120 and inside the first bonding pad 160.

At this time, the first bonding pad 160 is physically attached to the light emitting structure 120 through the first contact hole CH1. The second bonding pad 162 is electrically connected to the metal diffusion barrier layer 150 via the second contact hole CH2.

Particularly, in the present invention, the first bonding pad 160 is formed so as to surround the edge excluding the central portion of the light emitting structure 120, and the second bonding pad 162 is formed inside the first bonding pad 160 Since the first and second bonding pads 160 and 162 are disposed so as to not overlap each other with the insulating layer 155 interposed therebetween in the cross-sectional view, micro-cracks (micro since the first bonding pad 160 is formed along the edge of the light emitting structure 120 as well as the leakage current due to the cracks and pin holes of the first bonding pad 160 and the pin hole, There is a structural advantage that the formation area can be reduced and the low current failure and the reverse failure can be improved in terms of the yield.

The first bonding pad 160 is formed so as to surround the edge of the light emitting structure 120 and the second bonding pad 162 is formed inside the first bonding pad 160, And the second bonding pads 160 and 162 are arranged so as not to overlap each other in the cross-sectional view.

As a result, in the present invention, since the first bonding pad 160 is formed to surround the edge of the light emitting structure 120, the first bonding pad 160 is damaged by the eject pin of the die attach device during the die attach process Thus, the pick-up property and the degree of alignment can be improved and the reliability of the surface mounting can be improved.

1, 12, 19 and 28, a protective layer 165 covering the first and second bonding pads 160 and the insulating layer 155 is formed. Next, a fifth photomask pattern (not shown) is formed on the protective layer 165 to cover the protective layer formation region, and then a part of the first bonding pad 160 is removed by wet etching using the fifth photomask pattern The exposed third contact hole CH3 and the fourth contact hole CH4 exposing a part of the second bonding pad 162 are formed.

If the second bonding pad 162 is omitted, the protective layer 165 may be formed to cover the first bonding pad 160 and the insulating layer 165. In this case, the third contact hole CH3 is formed to expose a part of the first bonding pad 160 and the fourth contact hole CH4 is formed to cover a part of the reflection layer 140 or the metal diffusion barrier layer 150 As shown in FIG.

The protective layer 165 may be made of at least one selected from the group consisting of a compound including Si, Mg, Ti, Al, Zn, C, In, and Sn and an oxide as well as the insulating layer 155.

Next, a first bump 170 electrically connected to the first bonding pad 160 via the third contact hole CH3 and a second bump 170 electrically connected to the first bonding pad 160 via the fourth contact hole CH4 are formed on the protective layer 165 And a second bump 172 electrically connected to the second bonding pad 162 is formed. At this time, the second bumps 172 are electrically connected to the second bonding pads 162, but the present invention is not limited thereto. That is, when the second bonding pad 162 is not formed, the second bump 172 is electrically connected to a part of the reflection layer 140 or the metal diffusion barrier layer 150 via the fourth contact hole CH4 .

The first bump 170 is formed on one side of the light emitting structure 120 and the second bump 172 is formed on the other side of the light emitting structure 120. In the center of the light emitting structure 120, Two bumps 170 and 172 are not formed.

In the present invention, a method of forming the transparent conductive material layer 130a on the entire upper surface of the light emitting structure 120 has been described. However, in the conventional structure, the transparent conductive material 130a formed on the light emitting structure 120 Layer 130a may be omitted.

The second bonding pad 162 is disposed at the center of the first bonding pad 160 and the second bump 172 is disposed at the center of the light emitting structure 120. The second bonding pad 162 is disposed at the center of the first bonding pad 160, Since the second bonding pad 162 and the fourth contact hole (CH4 in FIG. 1) are electrically connected to each other through the second bump 162 and the second bump 162, which are solder-bonded in the soldering process after the die attach process, The Sn diffusion region can be isolated by the Sn diffusion region 172, thereby preventing diffusion of Sn.

A method of fabricating a flip type nitride semiconductor light emitting device according to an embodiment of the present invention includes forming a first bonding pad on an edge of a light emitting structure excluding a central portion of the light emitting structure and forming a second bonding pad on an inner side of the first bonding pad Since the first and second bonding pads are disposed so as not to overlap each other with the insulating layer interposed therebetween, a micro crack and a pinhole (pin), which are problems in a metal-insulator- hole and the first bonding pad is formed along the four side edges of the light emitting structure, the formation area of the first bonding pad is reduced so that a low current defect and a reverse reverse) defects.

In the method of manufacturing a flip type nitride semiconductor light emitting device according to an embodiment of the present invention, the first bonding pad is formed so as to surround the edge excluding the central portion of the light emitting structure, It is possible to prevent the first bonding pads from being damaged, thereby improving the pick-up performance and the degree of alignment, thereby improving the reliability of the surface mounting.

In the method of manufacturing a flip-type nitride semiconductor light emitting device according to an embodiment of the present invention, the second bonding pad is disposed at the center of the first bonding pad, and the second bump is formed at the center of the first bonding pad. The Sn diffusion region is formed by the second bump that is solder-bonded in the soldering process after the die attach process. Therefore, the Sn diffusion region is electrically connected to the second contact hole through the fourth contact hole, It is possible to prevent diffusion of Sn.

FIG. 29 is a plan view of a flip type nitride semiconductor light emitting device according to a modification of the present invention, and FIG. 30 is a plan view of the first bonding pad of FIG. 29. Here, the flip-type nitride semiconductor light emitting device according to the modification of the present invention is different from the flip-type nitride semiconductor light emitting device according to the embodiment of the present invention described with reference to FIGS. 1 to 4 in the structure of the first and second bonding pads And only the differences are described because the remaining components are substantially the same.

29 and 30, a flip type nitride semiconductor light emitting device 100 according to a modification of the present invention differs in the design structure of the first bonding pad 160 and the second bonding pad 162 .

That is, the first bonding pad 160 may have a plate-like structure that is electrically connected to the light emitting structure (not shown) and surrounds the edge except the central portion of the light emitting structure (not shown). Accordingly, the first bonding pad 160 may be formed in a region other than the center portion of the light emitting structure 120 and the second bonding pad forming region.

The second bonding pad 162 is electrically isolated from the first bonding pad 160 and is disposed at the center of the light emitting structure 120 and inside the first bonding pad 160. The second bonding pad 162 may be formed in the second bonding pad forming region at the lower center of the light emitting structure 120. In this case, since the first bonding pad 160 is formed in an area except the second bonding pad formation area, the first bonding pad 160 and the second bonding pad 162 have a structure in which they do not overlap with each other in cross section.

Therefore, in the flip type nitride semiconductor light emitting device according to the modification of the present invention, as in the embodiment of the present invention, the first bonding pad is formed in a region excluding the center portion of the light emitting structure and the second bonding pad forming region, 2 bonding pads are formed on the inner side of the first bonding pads so that the first and second bonding pads are arranged so that they do not overlap each other with the insulating layer interposed therebetween, There is no possibility that leakage currents due to micro cracks and pin holes are caused.

31 is a plan view of a flip type nitride semiconductor light emitting device according to another modification of the present invention. Here, the flip-type nitride semiconductor light emitting device according to another modification of the present invention may be a structure in which the flip-type nitride semiconductor light emitting device, the first and second bonding pads according to the modification of the present invention described with reference to FIGS. 29 and 30, Represent the difference, and the remaining components are substantially the same, so only the difference will be described.

31, the flip type nitride semiconductor light emitting device 100 according to another modification of the present invention differs from the flip type nitride semiconductor light emitting device according to the modified example of the present invention (100 of FIG. 29) 2 Bonding pads are not designed.

In other words, in the flip-type nitride semiconductor light emitting device 100 according to another modification of the present invention, the first bonding pad 160 is electrically connected to the light emitting structure (not shown) May have a plate-like structure. Accordingly, the first bonding pad 160 may be formed at a central portion of the light emitting structure and a portion of the second bump 172 excluding a region electrically connected to the reflective layer or the metal diffusion preventing layer.

The first bump 170 is formed on one side of the light emitting structure and the second bump 172 is formed on the other side of the light emitting structure so that first and second bumps 170 and 172 are formed at the center of the light emitting structure It does not. The first bonding pad 160 is formed in a region except for the central portion of the light emitting structure and the second bonding pad is omitted so that a metal-insulator (MIM) is formed at a position corresponding to the central portion of the light emitting structure during the die attach process. -metal structure is not formed. Therefore, there is no fear that leakage current due to micro cracks and pin holes, which is a problem caused by the eject pin of the die attach device, is caused.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

[Description of Symbols]

100: nitride semiconductor light emitting element 110: substrate

120: light emitting structure 122: etching groove

130a: transparent conductive material layer 130: transparent conductive layer

140a: reflective material layer 140: reflective layer

150: Metal diffusion preventing layer 155: insulating layer

160: first bonding pad 160a: first bonding pad body portion

160b: first bonding pad protrusion 162: 2nd bonding pad

165: protective layer 170: 1st bump

172: second bump PM1: first photomask pattern

PM2: second photomask pattern CH1: first contact hole

CH2: second contact hole CH3: Third contact hole

CH4: fourth contact hole

Claims (19)

A light emitting structure having a first conductive type nitride layer, an active layer, and a second conductive type nitride layer which are sequentially stacked on a substrate;
A reflective layer and a metal diffusion barrier layer sequentially formed on the second conductivity type nitride layer of the light emitting structure;
A first bonding pad electrically connected to the light emitting structure and surrounding the edge except for a central portion of the light emitting structure;
A first bump electrically connected to the first bonding pad and formed on one side of the light emitting structure; And
And a second bump electrically connected to the reflective layer or the metal diffusion barrier layer and formed on the other side of the light emitting structure.
The method according to claim 1,
The semiconductor light-
A first bonding pad disposed on a central portion of the light emitting structure and electrically connected to the reflective layer or the metal diffusion barrier layer, the first bonding pad being electrically separated from the first bonding pad, 2 bonding pads,
And a transparent conductive layer formed between the second conductive type nitride layer and the reflective layer of the light emitting structure.
3. The method of claim 2,
The second bump
Type nitride semiconductor light emitting device electrically connected to the second bonding pad and formed on the other side of the light emitting structure.
The method according to claim 1,
The reflective layer
(Ti), zinc (Zn), niobium (Nb), tungsten (W), tin (Sn), zirconium (Zr), strontium (Sr), tantalum (Ta), nickel (Ni) Is selected from a mixture of at least one element selected from the group consisting of silver (Ag), aluminum (Al), palladium (Pd), ruthenium (Ru), platinum (Pt) and rhodium (Rh) Type nitride semiconductor light emitting device having at least one multilayer structure comprising at least one selected from a compound, a mixture, an oxide, a nitride and a fluoride.
The method according to claim 1,
The metal diffusion barrier layer
At least one selected from a compound, a mixture, an oxide, a nitride and a fluoride selected from a mixture of one or more selected from among Cr, Ni, Pt, Ti, Au, Cu, Type nitride semiconductor light emitting device.
The method according to claim 1,
The first bonding pad
A first bonding pad body portion formed to surround the four side edges of the light emitting structure,
And a first bonding pad protrusion extending from the first bonding pad body to the center of the light emitting structure and alternately staggered and spaced apart from the second bonding pad.
3. The method of claim 2,
The first bonding pad
The light- And the second bonding pad is formed at an inner center of the first bonding pad so that the first and second bonding pads are disposed so as not to overlap each other in a cross-sectional view.
The method according to claim 1,
The first and second bumps
And the first and second bumps are not formed at the center of the light emitting structure.
3. The method of claim 2,
The light-
An etch groove formed by removing a part of the light emitting structure,
An insulating layer formed to cover the light emitting structure and the metal diffusion barrier layer and having a first contact hole exposing a part of the light emitting structure and a second contact hole exposing a part of the metal diffusion barrier layer;
A third contact hole which is formed to cover the first and second bonding pads and the insulating layer and which exposes a part of the first bonding pad and a fourth contact hole which exposes a part of the second bonding pad, Type nitride semiconductor light-emitting device.
10. The method of claim 9,
The first bonding pad
Type nitride semiconductor light emitting device is physically attached to the light emitting structure via the first contact hole.
10. The method of claim 9,
The second bonding pad
Type nitride semiconductor light-emitting device is electrically connected to the metal diffusion barrier layer via the second contact hole.
10. The method of claim 9,
The first bump
And the second bumps are electrically connected to the second bonding pads through the fourth contact holes. The flip-type nitride semiconductor light emitting device of claim 1, wherein the first bonding pads are electrically connected to the second bonding pads via the third contact holes.
(a) forming a light emitting structure by sequentially laminating a first conductive type nitride layer, an active layer and a second conductive type nitride layer on a substrate;
(b) removing a part of the light emitting structure to form an etch groove;
(c) stacking a reflective layer and a metal diffusion barrier layer on the second conductive nitride layer of the light emitting structure in order;
(d) an insulating layer covering the light emitting structure and the metal diffusion barrier layer, the first contact hole exposing a part of the light emitting structure, and the second contact hole exposing a part of the reflective layer or the metal diffusion barrier layer, ;
(e) forming a first bonding pad on the insulating layer, the first bonding pad being electrically connected to the light emitting structure via the first contact hole;
(f) a third contact hole covering the first bonding pad and the insulating layer, the third contact hole exposing a part of the first bonding pad, and the fourth contact hole exposing a part of the reflective layer or the metal diffusion barrier layer Forming a layer; And
(g) a first bump electrically connected to the first bonding pad via the third contact hole on the protective layer, and a second bump electrically connected to a part of the reflective layer or the metal diffusion barrier layer via the fourth contact hole And forming a second bump to be connected to the second nitride semiconductor layer.
14. The method of claim 13,
The step (b)
(b-1) forming a first photomask pattern covering the transparent conductive layer forming region on the transparent conductive material layer after forming a transparent conductive material layer on the upper surface of the light emitting structure,
(b-2) etching the transparent conductive material layer by wet etching using the first photomask pattern to form a transparent conductive layer;
(b-3) etching the part of the light emitting structure exposed outside the first photomask pattern to form an etch groove.
14. The method of claim 13,
The step (c)
(c-1) forming a second photomask pattern covering the etch groove on the light-emitting structure having the transparent conductive layer;
(c-2) forming a reflective material layer on the entire upper surface of the light-emitting structure having the second photomask pattern formed thereon,
(c-3) removing the reflective material layer on the second photomask pattern and the second photomask pattern by a lift-off process to form a reflective layer on the transparent conductive layer,
(c-4) forming a third photomask pattern covering the etch groove on the light-emitting structure having the reflective layer formed thereon,
(c-5) forming a metal diffusion barrier material layer on the entire upper surface of the light emitting structure having the third photomask pattern;
(c-6) removing the metal diffusion barrier material layer on the third photomask pattern and the third photomask pattern by a lift-off process, and forming a metal diffusion barrier layer on the reflection layer A method for manufacturing a nitride semiconductor light emitting device.
14. The method of claim 13,
In the step (d)
(d-1) forming an insulating layer covering the light emitting structure and the metal diffusion barrier layer, forming a fourth photomask pattern covering the insulating layer forming region on the insulating layer,
(d-2) etching the insulating layer by wet etching using the fourth photomask pattern to form a first contact hole exposing a part of the light emitting structure and a second contact hole exposing a part of the reflective layer or the metal diffusion barrier layer Type nitride semiconductor light emitting device.
14. The method of claim 13,
In the step (e)
The first bonding pad is formed to surround the four sides of the light emitting structure and is electrically separated from the first bonding pad. The first bonding pad is disposed at the center of the light emitting structure, 2 forming a bonding pad Type nitride semiconductor light emitting device.
18. The method of claim 17,
In the step (f)
(f-1) forming a fifth photomask pattern covering the protective layer formation region on the protection layer, after forming a protective layer covering the first and second bonding pads and the insulating layer,
(f-2) forming a third contact hole exposing a part of the first bonding pad by wet etching using the fifth photomask pattern, and a fourth contact hole exposing a part of the second bonding pad Type nitride semiconductor light emitting device.
14. The method of claim 13,
In the step (g)
Wherein the first bump is formed on one side of the light emitting structure, the second bump is formed on the other side of the light emitting structure, and the flip type nitride semiconductor light emitting device in which the first and second bumps are not formed, Lt; / RTI >
KR1020150111661A 2015-08-07 2015-08-07 Flip type nitride semiconductor light emitting diode and method of manufacturing the same KR20170018239A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018212482A1 (en) * 2017-05-15 2018-11-22 엘지이노텍 주식회사 Semiconductor device and semiconductor device package
KR20180125192A (en) * 2017-05-15 2018-11-23 엘지이노텍 주식회사 Semiconductor device and semiconductor device package
CN112823427A (en) * 2020-07-03 2021-05-18 天津三安光电有限公司 Semiconductor light-emitting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018212482A1 (en) * 2017-05-15 2018-11-22 엘지이노텍 주식회사 Semiconductor device and semiconductor device package
KR20180125192A (en) * 2017-05-15 2018-11-23 엘지이노텍 주식회사 Semiconductor device and semiconductor device package
CN112823427A (en) * 2020-07-03 2021-05-18 天津三安光电有限公司 Semiconductor light-emitting element
CN112823427B (en) * 2020-07-03 2023-02-03 天津三安光电有限公司 Semiconductor light-emitting element

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