KR20170010279A - Transparent display device and method for fabricating the same - Google Patents

Abstract

Embodiments of the present invention relate to a transparent display device and a method of manufacturing the same, in which a background can be seen in various colors when an image is not displayed. A transparent display device according to an embodiment of the present invention includes pixels each including a transmissive portion and a light-emitting portion connected to data lines and gate lines intersecting with each other, the transmissive portion including an electrophoretic layer, To transmit light having a predetermined color.

Description

TECHNICAL FIELD [0001] The present invention relates to a transparent display device and a method of manufacturing the transparent display device.

An embodiment of the present invention relates to a transparent display device and a manufacturing method thereof.

Flat panel display devices, which have been developed with the development of LCDs (Liquid Crystal Displays), are expected to contribute to the development of smart phones and LCDs by the rapid technological development of TFT (Thin Film Transistor) LCD, PDP (Plasma Display Panel) and OLED (Organic Light Emitting Display) Is being applied not only to small mobile devices such as tablets, but also to notebooks, monitors and TVs. Recently, flat panel displays are being developed as flexible display devices that can be bent or folded and transparent display devices that can see the background.

The transparent display device is divided into a transmissive portion that transmits incident light as it is and a light emitting portion that emits light. Therefore, the user can see the background of the transparent display device through the transmission portion when the light emitting portion does not emit light, and can view an image displayed by the light emitting portions when the light emitting portion emits light.

In recent years, such a transparent display device has been applied to various products, and in order to apply a transparent display device to a wide variety of products, it is also required to develop a transparent display device in which a background can be displayed in various colors .

Embodiments of the present invention provide a transparent display device and a method of manufacturing the same, in which a background can be displayed in various colors when an image is not displayed.

A transparent display device according to an embodiment of the present invention includes pixels each including a transmissive portion and a light-emitting portion connected to data lines and gate lines intersecting with each other, the transmissive portion including an electrophoretic layer, To transmit light having a predetermined color.

A method of manufacturing a transparent display device according to an embodiment of the present invention includes forming a first thin film transistor on a transmissive portion on a lower substrate and forming second thin film transistors on a light emitting portion; Forming a first electrode for electrophoresis in the transmissive portion, the first electrode being connected to a drain electrode of the first thin film transistor, and forming a first electrode for light emission connected to a drain electrode of the second thin film transistor in the light emitting portion; Forming barrier ribs for partitioning the first electrodes for electrophoresis, the first electrodes for light emission, and the first electrode for electrophoresis and the first electrode for light emission; Forming an organic light emitting layer, a second electrode for light emission, and an organic / inorganic composite film on the first electrode for light emission surrounded by the barrier ribs; Forming an electrophoretic layer and a second electrode for electrophoresis on the first electrode for electrophoresis surrounded by the barrier rib; And forming an overcoat layer on the second electrode for light emission, the second electrode for electrophoresis, and the barrier rib.

In an embodiment of the present invention, an organic light emitting layer may be formed in the light emitting portion of each of the pixels, and an electrophoresis layer may be formed in the transmissive portion. As a result, the embodiment of the present invention can display an image by using the light emitting portions, and the transmitting portion can transmit a predetermined color from the light incident from the outside using the electrophoretic layer. Therefore, the background of the present invention can be displayed in various colors according to the colors transmitted through the transparent portions of the pixels.

1 is an exemplary view showing a transparent display device according to an embodiment of the present invention.
2 is a plan view showing a part of the display area of FIG. 1 in detail;
3 is a cross-sectional view showing an example of I-I 'of FIG. 2;
4 is a cross-sectional view of I-I 'showing the electrophoresis layer when no voltage is applied;
5 is a cross-sectional view of I-I 'showing the electrophoresis layer when a voltage is applied;
6 is a flowchart illustrating a method of manufacturing a lower substrate of a transparent display device according to an embodiment of the present invention.
7A to 7E are sectional views of I-I 'illustrating a method of manufacturing a lower substrate of a transparent display device according to an embodiment of the present invention.
8 is a flow chart illustrating a method of manufacturing an upper substrate of a transparent display device according to an embodiment of the present invention.
9A and 9B are cross-sectional views taken along the line I-I 'for explaining a method of manufacturing an upper substrate of a transparent display device according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Where the terms "comprises," "having," "consisting of," and the like are used in this specification, other portions may be added as long as "only" is not used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

The terms "X-axis direction "," Y-axis direction ", and "Z-axis direction" should not be construed solely by the geometric relationship in which the relationship between them is vertical, It may mean having directionality.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, May refer to any combination of items that may be presented from more than one.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view illustrating an example of a transparent display device according to an embodiment of the present invention. Although the transparent display device 100 according to the embodiment of the present invention has been described with reference to the organic light emitting display device, it may be implemented as a liquid crystal display device.

1, a transparent display device 100 according to an exemplary embodiment of the present invention includes a transparent display panel 110, a gate driver 120, a source driver integrated circuit (IC) 130 A flexible film 140, a circuit board 150, and a timing control unit 160. [

The transparent display panel 110 includes a lower substrate 111 and an upper substrate 112. The upper substrate 112 may be an encapsulating substrate. The lower substrate 111 is formed to be larger than the upper substrate 112 so that a part of the lower substrate 111 can be exposed without being covered by the upper substrate 112.

In the display area DA of the transparent display panel 110, the pixels arranged in the intersecting regions of the gate lines, the data lines, the gate lines and the data lines are formed. The pixels of the display area DA can display an image. A detailed description of the display area DA will be given later with reference to Figs. 2 to 4. Fig.

The gate driver 120 supplies the gate signals to the gate lines according to the gate control signal input from the timing controller 160. In FIG. 3, the gate driver 120 is formed on the outside of one side of the display area DA of the transparent display panel 110 in a gate driver in panel (GIP) manner, but the present invention is not limited thereto. That is, the gate driver 120 may be formed on the outside of both sides of the display area DA of the transparent display panel 110 by a GIP method, or may be formed of a driving chip, mounted on a flexible film, Or may be attached to the transparent display panel 110 in a similar manner.

The source driver IC 130 receives the digital video data and the source control signal from the timing controller 160. The source driver IC 130 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines. When the source drive IC 130 is fabricated from a driving chip, the source drive IC 130 may be mounted on the flexible film 140 using a chip on film (COF) method or a chip on plastic (COP) method.

Since the size of the lower substrate 111 is larger than that of the upper substrate 112, a part of the lower substrate 111 can be exposed without being covered by the upper substrate 112. Pads such as data pads are provided on a part of the lower substrate 111 that is not covered by the upper substrate 112 and is exposed. Wires connecting the pads and the source drive IC 130 and wirings connecting the pads and the wirings of the circuit board 150 may be formed in the flexible film 140. The flexible film 140 is adhered to the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 140 can be connected.

The circuit board 150 may be attached to the flexible films 140. The circuit board 150 may be implemented with a plurality of circuits implemented with driving chips. For example, the timing control unit 160 may be mounted on the circuit board 150. [ The circuit board 150 may be a printed circuit board or a flexible printed circuit board.

The timing controller 160 receives digital video data and a timing signal from an external system board (not shown). The timing controller 60 generates a gate control signal for controlling the operation timing of the gate driver 120 and a source control signal for controlling the source driver ICs 130 based on the timing signal. The timing controller 60 supplies a gate control signal to the gate driver 120 and a source control signal to the source driver ICs 30. [

2 is a plan view showing a part of pixels of the display area of FIG. 1 in detail. 3 is a cross-sectional view showing an example of I-I 'of FIG. 2 and 3, gate lines (Gk, Gk + 1, k are positive integers), data lines (Dj, Dj + 1, Dj + 2, Dj + j is a positive integer). Also, in the display area DA, pixels RP, GP, BP arranged in the intersecting regions of the gate lines and the data lines are formed.

The pixels RP, GP and BP may include red pixels RP, green pixels GP and blue pixels BP as shown in FIG. Do not. For example, the pixels RP, GP, and BP may further include white pixels in addition to the red pixel RP, the green pixel GP, and the blue pixel BP. Alternatively, the pixels may include a yellow pixel, a magenta pixel, and a cyan pixel.

The red pixel RP includes a red transmissive portion RT and a red light emitting portion RE and the green pixel GP includes a green transmissive portion GT and a green light emitting portion GE, And includes a blue light transmitting portion BT and a blue light emitting portion BE.

The red light emitting portion RE is a region for emitting red light, the green light emitting portion GE is a region for emitting green light, and the blue light emitting portion BE is a region for emitting blue light. The red transmissive portion (RT) allows light incident from the outside to pass through red, the green transmissive portion (GT) passes light that is incident from the outside to green, and the blue transmissive portion (BT) . Accordingly, when the light emitting units RE, GE, and BE emit light, images displayed by the light emitting units RE, GE, and BE can be seen. Also, if the light emitting units RE, GE, and BE do not emit light, the background of the transparent display unit can be seen through the transmissive units RT, GT, and BT.

Each of the red light emitting portion RE, the green light emitting portion GE and the blue light emitting portion BE may include a light emitting layer. In this case, the light emitting layer may include an organic light emitting layer, Lt; / RTI > Each of the red transmissive portion (RT), green transmissive portion (GT), and blue transmissive portion (BT) may include an electrophoresis display layer.

The red transmission portion RT may include a red electrophoresis layer (EPDR) that transmits light incident from the outside as it is or transmits red light among light incident from the outside. The red transmissive portion RT may include a first thin film transistor T1 as shown in FIG. 3 and the gate electrode of the first thin film transistor T1 of the red transmissive portion RT may be connected to the kth gate line Gk , The source electrode may be connected to the jth data line Dj, and the drain electrode may be connected to the first electrophoresis electrode EPD_E1. Therefore, when the gate signal is applied to the kth gate line Gk, the first thin film transistor T1 of the red transmission portion RT applies the data voltage of the jth data line Dj to the first electrophoresis electrode EPD_E1 ). ≪ / RTI >

For example, the red electrophoretic layer (EPDR) may include a micro capsule (MC) as shown in FIGS. 4 and 5. The microcapsule MC includes white charged particles WC having positive polarity, A red charged particle (RC) having a negative polarity, and a solvent (SOL).

When no voltage is applied to the first electrode (EPD_E1) for electrophoresis and the second electrode (EPD_E2) for electrophoresis, white charged particles (WC) having a positive polarity of a red electrophoretic layer (EPDR) As shown in FIG. 4, the charged particles RC are randomly distributed in the red electrophoresis layer (EPDR), so that light incident from the outside can pass through the red electrophoresis layer (EPDR) almost as it is.

When a data voltage for electrophoresis is applied to the electrophoresis first electrode (EPD_E1) and a low potential voltage lower than the electrophoresis data voltage is applied to the electrophoresis second electrode (EPD_E2), the electrophoresis first electrode EPD_E1) has a positive potential relative to the second electrode (EPD_E2) for electrophoresis. For example, the data voltage for electrophoresis may be set to a voltage substantially equal to the data voltage for light emission, and may be, for example, approximately 0 to 8.5V. The low potential voltage may be 0V. In this case, as shown in FIG. 5, the red electrified particles RC of the red electrophoretic layer ERDR have a negative polarity and therefore move to the electrophoretic second electrode EPD_E2, and the white charged particles WC have positive polarity And moves to the electrophoretic first electrode (EPD_E1). Therefore, the red electrified particles (RC) of the red electrophoretic layer (EPDR) transmit only the red light among external incident light as shown in FIG. 5 and reflect the remaining light in addition to the red light, In red.

The green transmissive portion GT may include a green electrophoresis layer that transmits light incident from the outside as it is or transmits green light among light incident from the outside. The green transmissive portion GT may also include a first thin film transistor T1 in which the gate electrode of the first thin film transistor T1 of the green transmissive portion GT is connected to the kth gate line Gk, The electrode may be connected to the (j + 1) th data line Dj + 1, and the drain electrode may be connected to the first electrophoresis electrode EPD_E1. Therefore, when the gate signal is applied to the kth gate line Gk, the first thin film transistor T1 of the green transmissive portion GT supplies the data voltage of the (j + 1) th data line Dj + 1 electrode (EPD_E1).

For example, the green electrophoresis layer may comprise microcapsules having a positive polarity, the microcapsules may comprise white charged particles, green charged particles having negative polarity, and a solvent.

When voltage is not applied to the electrophoretic first electrode (EPD_E1) and the electrophoretic second electrode (EPD_E2), white electrified particles having a positive polarity of a green electrophoresis layer and green electrified particles having a negative polarity are subjected to green electrophoresis Are randomly distributed within the layer, so that light incident from the outside can pass through the green electrophoresis layer almost as it is.

When a data voltage for electrophoresis is applied to the electrophoresis first electrode (EPD_E1) and a low potential voltage lower than the electrophoresis data voltage is applied to the electrophoresis second electrode (EPD_E2), the electrophoresis first electrode EPD_E1) has a positive potential relative to the second electrode (EPD_E2) for electrophoresis. In this case, since the green charged particles of the green electrophoretic layer have a negative polarity, they migrate to the electrophoretic second electrode (EPD_E2), and the white charged particles have a positive polarity, and therefore move to the electrophoretic first electrode (EPD_E1) do. Therefore, the green charged particles in the green electrophoretic layer transmit only the green light among the incident external light and reflect the remaining light in addition to the green light, so that the green transmissive portion GT displays the background in green.

The blue transmissive portion BT may include a blue electrophoresis layer that transmits light incident from the outside as it is or transmits blue light from light incident from the outside. The blue transmissive portion BT may also include a first thin film transistor T1 in which the gate electrode of the first thin film transistor T1 of the blue transmissive portion BT is connected to the kth gate line Gk, The electrode may be connected to the (j + 2) th data line Dj + 2, and the drain electrode may be connected to the first electrode EPD_E1 for electrophoresis. Therefore, when the gate signal is applied to the kth gate line Gk, the first thin film transistor T1 of the blue transmissive portion BT supplies the data voltage of the (j + 2) th data line Dj + 1 electrode (EPD_E1).

For example, the blue electrophoretic layer may include microcapsules having a positive polarity, and the microcapsules may include white charged particles, blue charged particles having negative polarity, and a solvent.

When no voltage is applied to the first electrode (EPD_E1) for electrophoresis and the second electrode (EPD_E2) for electrophoresis, the white charged particles having the positive polarity of the blue electrophoresis layer and the blue charged particles having negative polarity are blue electrophoresis Are randomly distributed within the layer, so that light incident from the outside can pass through the blue electrophoresis layer almost as it is.

When a data voltage for electrophoresis is applied to the electrophoresis first electrode (EPD_E1) and a low potential voltage lower than the electrophoresis data voltage is applied to the electrophoresis second electrode (EPD_E2), the electrophoresis first electrode EPD_E1) has a positive potential relative to the second electrode (EPD_E2) for electrophoresis. In this case, since the blue charged particles of the blue electrophoretic layer have a negative polarity, they migrate to the electrophoretic second electrode (EPD_E2), and since the white charged particles have positive polarity, they move to the electrophoretic first electrode (EPD_E1) do. Therefore, since the blue charged particles of the blue electrophoretic layer transmit only blue light in the incident external light and reflect the remaining light in addition to the blue light, the blue transmission portion BT displays the background in green.

The light emitting layer of the red light emitting portion RE includes a red organic light emitting material that emits red light, the light emitting layer of the green light emitting portion GE includes a green organic light emitting material that emits green light, May include a blue organic light emitting material emitting blue light. In this case, a color filter need not be formed on the upper substrate.

Alternatively, the light emitting layer of each of the red light emitting portion RE, the green light emitting portion GE, and the blue light emitting portion BE may include an organic light emitting material that emits white light. In this case, a red color filter is formed on the red light emitting portion RE, a green color filter is formed on the green light emitting portion GE, and a blue color filter is formed on the blue light emitting portion BE.

The red light emitting portion RE includes a second thin film transistor T2 and the gate electrode of the second thin film transistor T2 of the red light emitting portion RE includes a (k + 1) th gate line Gk + 1 The source electrode may be connected to the jth data line Dj, and the drain electrode may be connected to the first electrode EL_E1 for emission. Therefore, when the gate signal is applied to the (k + 1) -th gate line Gk + 1, the second thin film transistor T2 of the red light emitting portion RE supplies the data voltage of the j- 1 electrode EL_E1.

When no voltage is applied to the first electrode EL_E1 for light emission and the second electrode EL_E2 for light emission, the light emitting layer ELR does not emit light. When a data voltage for light emission is applied to the first electrode EL_E1 for light emission and a low potential voltage lower than the data voltage for light emission is applied to the second electrode EL_E2 for light emission from the first electrode EL_E1 for light emission, A current flows through the second electrode EL_E2, and the light emitting layer ELR emits light according to the current. For example, the data voltage for light emission may be approximately 0 to 8.5V, and the low potential voltage may be 0V.

The green light emitting portion GE also includes the second thin film transistor T2 and the gate electrode of the second thin film transistor T2 of the green light emitting portion GE is connected to the (k + 1) th gate line Gk + 1 , The source electrode may be connected to the (j + 1) th data line Dj + 1, and the drain electrode may be connected to the first electrode EL_E1 for light emission. Therefore, the second thin film transistor T2 of the green light emitting portion GE is turned on when the gate signal is applied to the (k + 1) -th gate line Gk + 1, Can be applied to the first electrode EL_E1 for light emission.

When no voltage is applied to the first electrode EL_E1 for light emission and the second electrode EL_E2 for light emission, the light emitting layer does not emit light. When a data voltage for light emission is applied to the first electrode EL_E1 for light emission and a low potential voltage lower than the data voltage for light emission is applied to the second electrode EL_E2 for light emission from the first electrode EL_E1 for light emission, A current flows to the second electrode EL_E2, and the light emitting layer emits light according to the current.

The blue light emitting portion BE includes the second thin film transistor T2 and the gate electrode of the second thin film transistor T2 of the blue light emitting portion BE is connected to the (k + 1) th gate line Gk + 1 , The source electrode may be connected to the (j + 2) th data line Dj + 2, and the drain electrode may be connected to the first electrode EL_E1 for light emission. Thus, the second thin film transistor T2 of the blue light emitting portion BE is turned on when the gate signal is applied to the (k + 1) -th gate line Gk + 1, Can be applied to the first electrode EL_E1 for light emission.

When no voltage is applied to the first electrode EL_E1 for light emission and the second electrode EL_E2 for light emission, the light emitting layer does not emit light. When a data voltage for light emission is applied to the first electrode EL_E1 for light emission and a low potential voltage lower than the data voltage for light emission is applied to the second electrode EL_E2 for light emission from the first electrode EL_E1 for light emission, A current flows to the second electrode EL_E2, and the light emitting layer emits light according to the current.

Hereinafter, the cross section of the red pixel RP will be described in detail with reference to FIG. 3 shows only the cross section of the red pixel RP for the sake of convenience, the cross section of the green pixel GP and the cross section of the blue pixel BP may be formed substantially the same as in FIG.

A first thin film transistor T1, a first electrophoresis electrode EPD_E1, a red electrophoresis layer EPDR and a second electrophoresis electrode EPD_E2 may be provided on the red transmission region RT .

The first thin film transistor T1 includes a first active layer ACT1, a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The first active layer ACT1 is formed on the lower substrate 111 and the first insulating layer I1 is formed on the first active layer ACT1. The first gate electrode GE1 connected to the kth gate line Gk is formed on the first insulating film I1 and the second insulating film I2 is formed on the first gate electrode GE1. The first source electrode SE1 connected to the jth data line Dj and the first drain electrode DE1 connected to the first electrophoresis electrode EPD_E1 are formed on the second insulating film I2. The first source electrode SE1 is connected to the first active layer ACT1 through the first contact hole CNT1 passing through the first and second insulating films I1 and I2. The first drain electrode DE1 is connected to the first active layer ACT1 through a second contact hole CNT2 passing through the first and second insulating films I1 and I2. In FIG. 3, the first thin film transistor T1 is formed in a top gate manner. However, the present invention is not limited thereto.

An interlayer insulating film ILD is formed on the first source electrode SE1 and the first drain electrode DE1 and a first electrode EPD_E1 for electrophoresis is formed on the interlayer insulating film ILD. The electrophoresis first electrode EPD_E1 is connected to the first drain electrode DE1 through a third contact hole CNT3 passing through the interlayer insulating film ILD.

A barrier rib W may be formed between the electrophoretic first electrodes EPD_E1 adjacent to each other and between the first electrophoresis electrode EPD_E1 and the first electrode EL_E1 for light emission. Therefore, the electrophoretic first electrode (EPD_E1) and the first electrode for light emission (EL_E1) adjacent to each other and the first electrodes (EPD_E1) for electrophoresis can be partitioned by the barrier rib (W) Lt; / RTI > It is preferable that the first thin film transistor T1 is formed below the barrier rib W to prevent the transmission region of the red transmission region RT from being reduced due to the first thin film transistor T1.

A red electrophoretic layer (EPDR) is formed on the electrophoretic first electrode (EPD_E1). The red electrophoretic layer (EPDR) may include a microcapsule MC as shown in FIGS. 4 and 5. The microcapsules MC may include white charged particles WC having positive polarity, red charged particles having negative polarity (RC), and a solvent (SOL). A second electrode (EPD_R2) for electrophoresis may be formed on the red electrophoresis layer (EPDR). The electrophoresis first electrode (EPD_E1) and electrophoresis second electrode (EPD_E2) are preferably formed of a transparent metal material such as ITO or IZO.

As shown in FIG. 4, the red electrophoretic layer (EPDR) includes white charged particles WC having positive polarity when no voltage is applied to the first electrophoresis electrode EPD_E1 and the second electrophoresis electrode EPD_R2, The red charged particles RC having polarity are randomly distributed in the red electrophoresis layer (EPDR), so that light incident from the outside can pass through the red electrophoresis layer (EPDR) almost as it is.

When a data voltage for electrophoresis is applied to the electrophoresis first electrode (EPD_E1) and a low potential voltage lower than the electrophoresis data voltage is applied to the electrophoresis second electrode (EPD_E2), the electrophoresis first electrode EPD_E1) has a positive potential relative to the second electrode (EPD_E2) for electrophoresis. In this case, as shown in FIG. 5, the red electrified particles RC of the red electrophoretic layer ERDR have a negative polarity and therefore move to the electrophoretic second electrode EPD_E2, and the white charged particles WC have positive polarity And moves to the electrophoretic first electrode (EPD_E1). Therefore, the red electrified particles (RC) of the red electrophoretic layer (EPDR) transmit only the red light among external incident light as shown in FIG. 5 and reflect the remaining light in addition to the red light, In red.

A second thin film transistor T2, a first electrode EL_E1, a light emitting layer ELR, and a second electrode EL_E2 for light emission may be provided on the red light emitting portion RE as shown in FIG.

The second thin film transistor T2 includes a second active layer ACT2, a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2. The second active layer ACT2 is formed on the lower substrate 111 and the first insulating layer I1 is formed on the second active layer ACT2. The second gate electrode GE2 connected to the (k + 1) th gate line Gk + 1 is formed on the first insulating film I1 and the second insulating film I2 is formed on the second gate electrode GE2 . The second source electrode SE2 connected to the jth data line Dj and the second drain electrode DE2 connected to the first electrode EL_E1 for emission are formed on the second insulating film I2. The second source electrode SE2 is connected to the second active layer ACT2 through a fourth contact hole CNT4 passing through the first and second insulating films I1 and I2. The second drain electrode DE2 is connected to the second active layer ACT2 through the fifth contact hole CNT5 passing through the first and second insulating films I1 and I2. In FIG. 3, the second thin film transistor T2 is formed in a top gate manner. However, the present invention is not limited thereto, and the bottom gate method may be used.

An interlayer insulating film ILD is formed on the second source electrode SE2 and the second drain electrode DE2 and a first electrode EL_E1 for light emission is formed on the interlayer insulating film ILD. The first electrode EL_E1 for light emission is connected to the second drain electrode DE2 through a sixth contact hole CNT6 passing through the interlayer insulating film ILD.

A barrier rib W may be formed between the first electrode EL_E1 for light emission and the first electrode EPD_E1 for electrophoresis and the first electrode EL_E1 for light emission, which are adjacent to each other between adjacent first electrodes EL_E1. Therefore, the first electrode for electrophoresis (EPD_E1) and the first electrode for light emission (EL_E1) adjacent to each other adjacent to the first electrodes (EL_E1) for light emission can be partitioned by the barrier rib (W) Can be insulated.

The light emitting layer (ELR) may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. And a second electrode EL_E2 for light emission is formed on the light-emitting layer ELR. When a voltage is applied to the first electrode EL_E1 for light emission and the second electrode EL_E2 for light emission, holes and electrons move to the organic light emitting layer through the hole transporting layer and the electron transporting layer, respectively. The first electrode EL_E1 for emitting light may be an anode electrode, and the second electrode EL_E2 for emitting light may be a cathode electrode. The first electrode EL_E1 for light emission and the second electrode EL_E2 for light emission are preferably formed of a transparent metal material such as ITO or IZO.

In FIG. 3, each of the pixels P is formed as a top emission type. However, the present invention is not limited thereto, and the bottom emission type may be used. The light emitting layer ELR emits light in the direction of the upper substrate 112 in the front emission type and therefore the transistors including the second transistor T2 are provided broadly below the barrier W and the first electrode EL_E1 for light emission . Therefore, the front emission type has an advantage that the design area of the transistors is wider than that of the back emission type. In the front emission type, it is preferable that a metal material having a high reflectivity such as aluminum (Al) is formed under the first electrode EL_E1 for light emission.

An organic-inorganic composite film (OIC) is formed on the second electrode EL_E2 for light emission. Specifically, the organic-inorganic composite film (OIC) is a film for protecting the light-emitting layer (ELR) and the second electrode for light emission (EL_E2) from moisture and oxygen. The organic / inorganic composite film (OIC) may include a first inorganic film covering the second electrode EL_E2 for light emission, an organic film covering the first inorganic film, and a second inorganic film covering the organic film.

An overcoat layer OC for planarization is formed on the second electrode for electrophoresis (EPD_E2), the organic-inorganic hybrid film (OIC), and the barrier rib W. The thicknesses of the electrophoretic layer (EPDR) and the electrophoretic second electrode (EPD_E2) and the thicknesses of the organic light-emitting layer (ELR), the second electrode for emitting light OL_E2, and the organic / inorganic composite film (OIC) An overcoat layer (OC) is needed for planarization.

When the organic light emitting layer of the light emitting layer (ELR) is an organic light emitting layer that emits white light, a red color filter (RCF) may be formed on the overcoat layer OC. When the organic light emitting layer of the light emitting layer (ELR) is an organic light emitting layer that emits red light, the red color filter (RCF) may be omitted.

In FIG. 3, the red color filter (RCF) is formed on both the red transmissive portion (RT) and the red light emitting portion (RE). However, the present invention is not limited thereto. That is, the red color filter RCF may be formed only in the red light emitting portion RE.

A black matrix (BM) is formed at the boundary between the pixels on the red color filter (RCF). An upper substrate 112 is formed on the red color filter (RCF) and the black matrix (BM).

3, only the cross section of the red pixel RP is shown and only the cross section of the red pixel RP is described. However, when the cross section of the green pixel GP and the cross- 3 may be formed substantially the same as in Fig.

As described above, according to the embodiment of the present invention, since the electrophoretic layer is formed in the transmissive portion of each of the pixels, the transmissive portion can transmit a predetermined color from the light incident from the outside using the electrophoretic layer. As a result, the background of the present invention can be displayed in various colors according to the colors transmitted through the transparent portions of the pixels.

6 is a flowchart illustrating a method of manufacturing a lower substrate of a transparent display device according to an embodiment of the present invention. 7A to 7E are cross-sectional views taken along line I-I 'for explaining a method of manufacturing a lower substrate of a transparent display device according to an embodiment of the present invention.

7A to 7E illustrate only the cross section of the red pixel RP for the convenience of explanation but the cross section of the green pixel GP and the cross section of the blue pixel BP are formed to be substantially the same as in FIGS. 7A to 7E . Hereinafter, a method of manufacturing the lower substrate 111 of the transparent display device according to the embodiment of the present invention will be described in detail with reference to FIG. 6 and FIGS. 7A to 7E.

First, first and second thin film transistors T1 and T2 are formed on a lower substrate 111 as shown in FIG. 7A.

Specifically, the lower substrate 111 may be formed of glass or plastic. When the lower substrate 111 is formed of plastic, the transparent display device may be a flexible display device that can be bent or folded.

First, first and second active layers (ACT1, ACT2) are formed on a lower substrate (111). Each of the first and second active layers ACT1 and ACT2 may be a semiconductor layer including a silicon material. For example, each of the first and second active layers ACT1 and ACT2 may be amorphous silicon, an oxide semiconductor, or a low temperature process silicon.

Then, a first insulating film I1 is formed on the first and second active layers ACT1 and ACT2. The first insulating film I1 may be formed of a single film of silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of a composite film of silicon oxide (SiOx) and silicon nitride (SiNx).

Then, the gate lines and the first and second gate electrodes GE1 and GE2 are formed as a gate metal layer on the first insulating film I1. The gate lines and the first and second gate electrodes GE1 and GE2 may be any one of molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), and chromium As shown in FIG.

Then, a second insulating film I2 is formed on the first and second gate electrodes GE1 and GE2. The second insulating film I2 may be formed of a single film of silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of a composite film of silicon oxide (SiOx) and silicon nitride (SiNx).

Then, the data lines, the first and second source electrodes SE1 and SE2, and the first and second drain electrodes DE1 and DE2 are formed as a source / drain metal layer on the second insulating film I2 do. The data lines, the first and second source electrodes SE1 and SE2 and the first and second drain electrodes DE1 and DE2 may be formed of molybdenum (Mo) and molybdenum alloy. More specifically, the first and second contact holes CNT1 and CNT2 and the second active layer ACT2, which pass through the first and second insulating films I1 and I2 and expose the first active layer ACT1, The fourth and fifth contact holes CNT4 and CNT5 are formed. The first source electrode SE1 is formed to be connected to the first active layer ACT1 through the first contact hole CNT1. And the first drain electrode DE1 is formed to be connected to the first active layer ACT1 through the second contact hole CNT2. And the second source electrode SE2 is formed to be connected to the second active layer ACT2 through the fourth contact hole CNT4. And the second drain electrode DE2 is formed to be connected to the second active layer ACT2 through the fifth contact hole CNT5. Although the first and second thin film transistors T1 and T2 are formed by the top gate method, the present invention is not limited thereto and may be formed by a bottom gate method. (S101 in Fig. 6)

Second, the first electrodes EPD_E1 for electrophoresis and the first electrodes EL_E1 for light emission are formed on the first and second thin film transistors T1 and T2 as shown in FIG. 5B.

Specifically, an interlayer insulating film (ILD) is formed on the data lines, the first and second source electrodes SE1 and SE2, and the first and second drain electrodes DE1 and DE2. The interlayer insulating film ILD may be formed of a single film of silicon oxide (SiOx) or silicon nitride (SiNx), a composite film of silicon oxide (SiOx) and silicon nitride (SiNx), or photo acrylate. A third contact hole CNT3 exposing the first drain electrode DE1 and a sixth contact hole CNT6 exposing the second drain electrode DE2 are formed through the interlayer insulating film ILD.

Then, the first electrode EPD_E1 for electrophoresis is formed on the interlayer insulating film ILD through the third contact hole CNT3 to be connected to the first drain electrode DE1, and the sixth contact hole CNT6 is formed The first electrode EL_E1 for light emission is formed to be connected to the second drain electrode DE2. The first electrophoresis electrode EPD_E1 is connected to the first transistor T1 and the first electrode EL_E1 for emission is connected to the second transistor T2 so that the first electrode EPD_E1 for electrophoresis and the first electrode And the first electrode EL_E1 may be controlled to be supplied with different data voltages.

The first electrode (EPD_E1) for electrophoresis and the first electrode (EL_E1) for light emission may be formed at the same time if they are formed of the same material. In this case, it is preferable that the first electrophoresis electrode EPD_E1 and the first electrode EL_E1 for light emission are formed of a transparent metal material such as ITO or IZO. Also, in the case of the top emission type, it is preferable that a metal material having a high reflectance such as aluminum is formed below the first electrode EL_E1 for light emission.

Thereafter, the first electrode (EL_E1) for electrophoresis, the first electrode (EPD_E1) for electrophoresis and the first electrode (EL_E1) for light emission, which are adjacent to each other, The partition wall W is formed. Accordingly, the first electrodes EPD_E1 for electrophoresis, the first electrodes EL_E1 for light emission adjacent to each other, and the first electrode EPD_E1 for electrophoresis and the first electrode EL_E1 for light emission, which are adjacent to each other, Can be partitioned by the partition walls W and can be electrically insulated from each other.

In order to prevent the transmissive region of the transmissive portion from being reduced due to the first thin film transistor T1, the first thin film transistor T1 is preferably formed below the barrier rib W. [ (S102 in Fig. 6)

Third, a light emitting layer ELR, a second electrode for emitting EL_E2, and an organic / inorganic composite film OIL are formed on the first electrode EL_E1 for light emission surrounded by the partition W.

First, a light emitting layer (ELR) is formed on the first electrode (EL_E1) for light emission surrounded by the barrier rib (W). When the light emitting layer (ELR) includes an organic luminescent material that emits red, the color filter may be omitted. When the light emitting layer (ELR) includes an organic luminescent material emitting white light, a red color filter (RCF) may be formed as shown in Fig. 9B.

Then, the second electrode EL_E2 for light emission is formed on the light-emitting layer ELR surrounded by the barrier rib W. The second electrode EL_E2 for light emission may be formed of a transparent metal material such as ITO or IZO in a top emission type and may be formed of a metal material having a high reflectance such as a laminated structure of aluminum, aluminum and ITO in a bottom emission type.

Then, an organic-inorganic composite film (OIC) is formed on the second electrode for light-emission (EL_E2) surrounded by the partition wall (W). The organic / inorganic composite film (OIC) is a film for protecting the light emitting layer (ELR) and the second electrode for light emission (EL_E2) from moisture and oxygen. The organic / inorganic composite film (OIC) may include a first inorganic film covering the second electrode EL_E2 for light emission, an organic film covering the first inorganic film, and a second inorganic film covering the organic film. (S103 in Fig. 6)

Fourth, an electrophoretic layer (EPDR) is formed on the first electrode (EPD_E1) for electrophoresis surrounded by the barrier rib (W). The electrophoretic layer (EPDR) may include a microcapsule MC as shown in FIGS. 4 and 5. The microcapsules MC include white charged particles WC having positive polarity, red charged particles having negative polarity RC), and a solvent (SOL).

The electrophoretic layer (EPDR) is formed by dropping an electrophoretic material on an electrophoretic first electrode (EPD_E1) surrounded by a partition wall (W) by an inkjet method and thermally curing or ultraviolet curing the electrophoretic material . The thermal curing is preferably performed at a temperature of 80 to 120 캜 within 3 minutes. On the other hand, since the partition wall W serves as a dam that can confine the electrophoretic material, it is preferable that the partition wall W is designed to have a sufficient height in consideration of this. (S104 in Fig. 6)

Fifth, a second electrode (EPD_E2) for electrophoresis is formed on the electrophoretic layer (EPDR). The electrophoretic second electrode (EPD_E2) is preferably formed of a transparent metal material such as ITO or IZO.

Then, an overcoat layer OC is formed on the second electrode for electrophoresis (EPD_E2), the second electrode for light emission (EL_E2), and the partition wall (W). The thicknesses of the electrophoretic layer (EPDR) and the electrophoretic second electrode (EPD_E2) and the thicknesses of the organic light-emitting layer (ELR), the second electrode for emitting light OL_E2, and the organic / inorganic composite film (OIC) An overcoat layer (OC) is needed for planarization. The overcoat layer OC may be formed of photoacrylic. (S105 in Fig. 6)

8 is a flowchart illustrating a method of manufacturing an upper substrate of a transparent display device according to an embodiment of the present invention. 9A and 9B are cross-sectional views taken along a line I-I 'for explaining a method of manufacturing an upper substrate of a transparent display device according to an embodiment of the present invention.

9A and 9B illustrate only the cross section of the red pixel RP for convenience of description, the cross section of the green pixel GP and the cross section of the blue pixel BP are formed to be substantially the same as in FIGS. 9A and 9B . Hereinafter, a method of manufacturing the lower substrate 111 of the transparent display device according to the embodiment of the present invention will be described in detail with reference to FIGS. 8, 9A, and 9B.

Hereinafter, a method of manufacturing the upper substrate 112 of the transparent display device according to the embodiment of the present invention will be described in detail with reference to FIGS. 8 and 9A and 9B.

First, a black matrix BM is formed on the upper substrate 112 as shown in FIG. 9A. The black matrix BM is formed at the boundary between the pixels and may be formed on the partition W. [ (S201 in Fig. 8)

Second, color filters are formed on the upper substrate 112 and the black matrix BM. When the light emitting layer ELR emits white light, a red color filter RCF is formed in the red pixel RP, a green color filter GCF is formed in the green pixel GP, A color filter (BCF) may be formed. In FIG. 9B, a red color filter (RCF) is formed on both the red light emitting portion RE and the red light transmitting portion RT of the red pixel RP. However, the present invention is not limited thereto. That is, the red color filter RCF may be formed only in the red light emitting portion RE. The green color filter GCF is formed on both the green light emitting portion GE and the green light transmitting portion GT or only on the green light emitting portion GE and the blue color filter BCF is also formed on both the blue light emitting portion BE and the blue light transmitting portion GE BT) or may be formed only on the blue light emitting portion BE. (RE, GE, BE) when red, green and blue color filters (RCF, GCF, BCF) are formed in both the light emitting units (RE, GE, BE) The transmissivity of the transmissive portions RT, GT, and BT may be lower than when the transmissive portions RT, GT, and BT are formed. However, when the red, green, and blue color filters RCF, GCF, and BCF are formed in both the light emitting units RE, GE, and BE and the light transmitting units RT, The process of etching the color filters (RCF, GCF, BCF) provided in the transmissive portions RT, GT and BT can be eliminated more than in the case of forming only the transmissive portions RT, GT and BT.

On the other hand, when the light emitting layer ELR of the red light emitting portion RE emits red light, the light emitting layer of the green light emitting portion GE emits green light, and the light emitting layer of the blue light emitting portion BE emits blue light, Can be omitted. (S202 in Fig. 8)

Meanwhile, the upper substrate 112 manufactured as described with reference to FIGS. 6 and 7A to 7E and the upper substrate 112 manufactured as described with reference to FIGS. 8, 9A and 9B are aligned and joined together, The transparent display device according to the embodiment can be completed. Since the black matrix BM and the color filters are formed on the upper substrate 112, it is necessary to align the lower substrate 111 and the upper substrate 112 using align keys, and then join them together. In this case, the overcoat layer OC of the lower substrate 111 may include an adhesive material for adhering to the color filter layer (RCF) of the upper substrate 112.

8, a color filter layer (RCF) and a black matrix (BM) are formed on the overcoat layer OC of the lower substrate 111, instead of the upper substrate 112 separately manufactured and then bonded to the lower substrate 111. [ , And a transparent display device may be manufactured by covering the color filter layer (RCF) and the black matrix (BM) with the upper substrate 112. In this case, the overcoat layer OC of the lower substrate 111 need not include an adhesive material, and may be formed of a photoresist.

As described above, in the embodiment of the present invention, the organic light emitting layer may be formed in the light emitting portion of each of the pixels, and the electrophoresis layer may be formed in the transmissive portion. As a result, the embodiment of the present invention can display an image by using the light emitting portions, and the transmitting portion can transmit a predetermined color from the light incident from the outside using the electrophoretic layer. Therefore, the background of the present invention can be displayed in various colors according to the colors transmitted through the transparent portions of the pixels.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100: transparent display device 110: transparent display panel
111: lower substrate 112: upper substrate
120: Gate driver 130: Source drive IC
140: flexible film 150: circuit board
160: timing control unit RP: red pixel
RE: Red light emitting part RT: Red light transmitting part
GP: green pixel GE: green light emitting portion
GT: Green transmissive part BP: Blue pixel
BE: blue light emitting portion GT: blue transmitting portion

Claims (15)

Data lines and gate lines crossing each other; And
And pixels each including a transmissive portion and a light emitting portion connected to the data lines and the gate lines, respectively,
Wherein the transmissive portion includes an electrophoretic layer and transmits light having a predetermined color by the electrophoretic layer. The method according to claim 1,
Wherein the light emitting portion includes an organic light emitting layer. 3. The method of claim 2,
Wherein the light emitting portion and the transmissive portion are partitioned by a partition wall. 3. The method of claim 2,
The light-
A first gate electrode extending from a kth (k is a positive integer) gate line of the gate lines, a first source electrode extending from a jth (j is a positive integer) data line of the data lines, A first thin film transistor including one drain electrode;
A first electrode for electrophoresis connected to a first drain electrode of the first thin film transistor; And
And a second electrode for electrophoresis provided on the electrophoretic layer provided on the first electrode. 5. The method of claim 4,
Wherein the electrophoretic layer transmits light having the predetermined color when a data voltage for electrophoresis is supplied to the first electrode for electrophoresis and a low potential voltage is supplied to the second electrode for electrophoresis,
Wherein the electrophoretic layer transmits light incident from outside as it is when no voltage is applied to the first and second electrodes for electrophoresis. 5. The method of claim 4,
The light-
A second thin film transistor including a second gate electrode extending from a gate line adjacent to the kth gate line, a second source electrode extending from the jth data line, and a second drain electrode;
A first electrode for light emission connected to a second drain electrode of the second thin film transistor; And
And a second electrode for light emission provided on the organic light emitting layer provided on the first electrode. The method according to claim 6,
And an overcoat layer is provided on the second electrode for electrophoresis and the second electrode for light emission. 8. The method of claim 7,
And a color filter layer provided on the overcoat layer,
Wherein the color filter layer is provided in both the transmissive portion and the light emitting portion. 8. The method of claim 7,
And a color filter layer provided on the overcoat layer,
Wherein the color filter layer is provided only in the light emitting portion. Forming a first thin film transistor on the transmissive portion on the lower substrate and forming second thin film transistors on the light emitting portion;
Forming a first electrode for electrophoresis in the transmissive portion, the first electrode being connected to a drain electrode of the first thin film transistor, and forming a first electrode for light emission in the light emitting portion, the first electrode being connected to a drain electrode of the second thin film transistor;
Forming barrier ribs for partitioning the first electrodes for electrophoresis, the first electrodes for light emission, and the first electrode for electrophoresis and the first electrode for light emission;
Forming an organic light emitting layer, a second electrode for light emission, and an organic / inorganic composite film on the first electrode for light emission surrounded by the barrier ribs;
Forming an electrophoretic layer and a second electrode for electrophoresis on the first electrode for electrophoresis surrounded by the barrier rib; And
And forming an overcoat layer on the second electrode for light emission, the second electrode for electrophoresis, and the barrier ribs. 11. The method of claim 10,
Forming the first thin film transistor on the transmissive portion on the lower substrate and the second thin film transistors on the light emitting portion,
Wherein the first gate electrode of the first thin film transistor is extended from the kth (k is a positive integer) gate line and the first source electrode is extended from the jth (j is a positive integer) Wherein the first gate electrode of the second thin film transistor extends from the gate line adjacent to the kth gate line and the second source electrode extends from the j data line, ≪ / RTI > 11. The method of claim 10,
Forming a first electrode for electrophoresis connected to the drain electrode of the first thin film transistor in the transmissive portion and forming a first electrode for light emission in the light emitting portion connected to the drain electrode of the second thin film transistor,
Wherein the first and second thin film transistors are formed with an interlayer insulating film, and the electrophoresis film is formed on the interlayer insulating film, the electrophoresis film being connected to the drain electrode of the first thin film transistor through a first contact hole passing through the interlayer insulating film, Wherein the first electrode for light emission is connected to the drain electrode of the second thin film transistor through a second contact hole passing through the interlayer insulating film. 11. The method of claim 10,
Wherein forming the electrophoresis layer and the second electrode for electrophoresis on the first electrode for electrophoresis in the transmissive portion comprises:
Dropping an electrophoretic material onto the first electrophoretic electrode surrounded by the partition wall with an inkjet apparatus;
Curing the electrophoretic material to form the electrophoretic layer; And
And forming the electrophoretic second electrode on the electrophoretic layer. 11. The method of claim 10,
Forming a black matrix and a color filter layer on the upper substrate; And
Further comprising bonding the lower substrate to the upper substrate,
Wherein the color filter layer is provided on the light emitting portion and the transmissive portion or is provided only on the light emitting portion. 11. The method of claim 10,
Forming a color filter layer and a black matrix on the overcoat layer; And
Further comprising covering the color filter layer and the black matrix with an upper substrate,
Wherein the color filter layer is provided on the light emitting portion and the transmissive portion or is provided only on the light emitting portion.

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