KR20170007327A - Heat-resistant adhesive sheet for semiconductor inspection and semiconductor inspection method - Google Patents

Heat-resistant adhesive sheet for semiconductor inspection and semiconductor inspection method Download PDF

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Publication number
KR20170007327A
KR20170007327A KR1020167033554A KR20167033554A KR20170007327A KR 20170007327 A KR20170007327 A KR 20170007327A KR 1020167033554 A KR1020167033554 A KR 1020167033554A KR 20167033554 A KR20167033554 A KR 20167033554A KR 20170007327 A KR20170007327 A KR 20170007327A
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South Korea
Prior art keywords
adhesive sheet
sensitive adhesive
pressure
mass
semiconductor
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KR1020167033554A
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Korean (ko)
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KR102359829B1 (en
Inventor
고스케 나카지마
마사노부 카츠미
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덴카 주식회사
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Publication of KR20170007327A publication Critical patent/KR20170007327A/en
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Publication of KR102359829B1 publication Critical patent/KR102359829B1/en

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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • C—CHEMISTRY; METALLURGY
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/02—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
    • C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
    • C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/67—Unsaturated compounds having active hydrogen
    • C08G18/671—Unsaturated compounds having only one group containing active hydrogen
    • C08G18/672—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen
    • C08G18/673—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen containing two or more acrylate or alkylacrylate ester groups
    • C—CHEMISTRY; METALLURGY
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    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/73—Polyisocyanates or polyisothiocyanates acyclic
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    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
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    • C08G18/75—Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
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    • C08G18/755—Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic containing only one cycloaliphatic ring containing at least one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group containing one isocyanate or isothiocyanate group linked to the cycloaliphatic ring by means of an aliphatic group having a primary carbon atom next to the isocyanate or isothiocyanate group and at least one isocyanate or isothiocyanate group linked to a secondary carbon atom of the cycloaliphatic ring, e.g. isophorone diisocyanate
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/80—Masked polyisocyanates
    • C08G18/8003—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen
    • C08G18/8006—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32
    • C08G18/8009—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203
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    • C08G18/8029—Masked aromatic polyisocyanates
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
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    • C09J11/08—Macromolecular additives
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
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    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
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    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C09J175/16—Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
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    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J7/0264—
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    • C09J7/00—Adhesives in the form of films or foils
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    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector

Abstract

가온에 의한 점착 시트의 변형이 생기기 어려운 내열성 점착 시트를 제공한다. 기재에 점착제층을 적층하여 이루어지는 점착 시트로서，기재가 열수축성을 나타내고 점착제층이 (메트)아크릴산 에스테르 공중합체와 광중합성 화합물과 다관능 이소시아네이트 경화제와 광중합개시제를 포함하고, 점착 부여 수지를 실질적으로 포함하지 않는 것을 특징으로 하는 점착 시트를 제공한다.
이 점착 시트는 가온 되었을 경우에도 점착 시트의 변형이 생기지 않는다. 또 점착제에 점착 부여 수지를 실질적으로 포함하지 않기 때문에 가온되었을 경우에도 점착제층의 연화가 생기지 않는다．A heat-resistant pressure-sensitive adhesive sheet which is resistant to deformation of the pressure-sensitive adhesive sheet due to heating. A pressure-sensitive adhesive sheet comprising a pressure-sensitive adhesive sheet laminated on a substrate, wherein the substrate exhibits heat shrinkability and the pressure-sensitive adhesive layer comprises a (meth) acrylic acid ester copolymer, a photopolymerizable compound, a polyfunctional isocyanate curing agent and a photopolymerization initiator, And the adhesive sheet does not contain the adhesive sheet.
The pressure-sensitive adhesive sheet is not deformed even when heated. In addition, since the pressure-sensitive adhesive does not substantially contain the tackifier resin, softening of the pressure-sensitive adhesive layer does not occur even when it is heated.

Description

반도체 검사용의 내열성 점착 시트, 및 반도체 검사 방법{HEAT-RESISTANT ADHESIVE SHEET FOR SEMICONDUCTOR INSPECTION AND SEMICONDUCTOR INSPECTION METHOD}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat-resistant pressure-sensitive adhesive sheet for semiconductor inspection,

본 발명은 반도체 검사용의 내열성 점착 시트 및 이 점착 시트를 이용한 반도체 검사 방법에 관한 것이다. The present invention relates to a heat-resistant pressure-sensitive adhesive sheet for semiconductor inspection and a semiconductor inspection method using the pressure-sensitive adhesive sheet.

반도체 웨이퍼는 회로를 형성한 후에 점착 시트를 첩합한 다음 소자 소편(小片)으로의 절단(다이싱), 세정, 건조, 점착 시트의 연신(延伸)(익스팬딩), 점착 시트로부터의 소자 소편의 박리(픽업), 마운팅 등의 각　공정에 배치된다. 이러한 공정에서 사용되는 점착 시트(다이싱 테이프)에는, 다이싱 공정으로부터 건조 공정까지는 절단된 소자 소편(칩)에 대하여 충분한 점착력을 가지면서 픽업공정 시에는 점착물 잔류가 없을 정도로 점착력이 감소되는 것이 요망된다. A semiconductor wafer is produced by forming a circuit and then adhering an adhesive sheet and then cutting (dicing), cleaning, drying, or stretching (expanding) the adhesive sheet to a small piece of element, Peeling (pickup), mounting, and the like. In the pressure-sensitive adhesive sheet (dicing tape) used in such a process, the adhesive force is reduced to such an extent that there is sufficient adhesive force to the cut small element (chip) from the dicing step to the drying step, Is desired.

점착 시트로서, 자외선 및/ 또는 전자선 등의 활성광선에 대하여 투과성을 가지는 기재 위에 자외선　등에 의해 중합 경화반응을 하는 점착제층을 도포한 것이 있다. 이 점착 시트에서는, 다이싱 공정　후에 자외선 등을 점착제층에 조사하여 점착제층을 중합 경화시켜 점착력을 저하시킨 후, 절단된 칩을 픽업하는 방법이 쓰인다. As the pressure-sensitive adhesive sheet, there is a pressure-sensitive adhesive layer coated with a pressure-sensitive adhesive layer which reacts with a polymerization and curing with ultraviolet rays or the like, on a substrate having transparency to an active ray such as ultraviolet rays and / or electron rays. In this pressure-sensitive adhesive sheet, after the dicing step, ultraviolet light or the like is irradiated to the pressure-sensitive adhesive layer to polymerize and cure the pressure-sensitive adhesive layer to lower the adhesive force, and then the cut chips are picked up.

이러한 점착 시트로서는, 특허문헌 1 및 특허문헌 2에는, 기재면에 예를 들면 활성광선에 의해 삼차원 망상화(網狀化)할 수 있는, 분자 내에 광중합성 불포화 이중 결합을 가지는 화합물(다관능성 올리고머)을 함유하여 이루어지는 점착제를 도포한 점착 시트가 개시되어 있다. As such a pressure-sensitive adhesive sheet, Patent Documents 1 and 2 disclose a pressure-sensitive adhesive sheet in which a compound having a photopolymerizable unsaturated double bond in a molecule, which is capable of three-dimensionally networking on the substrate surface by, for example, an actinic ray ) As a pressure-sensitive adhesive sheet.

특허문헌 1: 일본공개특허공보 2009-245989호 공보Patent Document 1: JP-A-2009-245989 특허문헌 2: 일본공개특허공보 2012-248640호 공보Patent Document 2: JP-A-2012-248640

반도체장치의 제조 공정에서는, 이하의 순서로 가공 및 성능검사가 실시되고 있다. In the manufacturing process of the semiconductor device, processing and performance inspection are performed in the following order.

· 반도체 웨이퍼의 다이싱 · Dicing of semiconductor wafers

· 성능검사(상온) · Performance test (room temperature)

· 패키징 · Packaging

· 성능검사(고온 및 상온) · Performance test (high temperature and room temperature)

상기의 공정에서는 고온상태에서 이상이 있는 칩은 패키징 후의 성능검사를　할 때까지 판별할 수 없다. 그 때문에, 고온상태에서 이상이 있는 칩도 모두 패키징해야 하기 때문에 패키징 코스트의 증대로 이어지고 있다. In the above process, a chip having an abnormality under a high temperature condition can not be discriminated until the performance test after packaging. For this reason, all chips having an abnormality under a high temperature condition must be packaged, leading to an increase in packaging cost.

다이싱 후의 성능검사를 고온에서 실시할 수 있으면, 패키징 코스트의 삭감으로 이어지지만, 이 성능검사는 다이싱 테이프　등의 점착 시트에 반도체칩을 첩부(貼付)한 상태에서 실시하기 때문에 반도체칩을 가온(加溫)하면 점착 시트가 휘어져 변형되거나 과도하게 밀착되어 버리거나 하는 경우가 있었다． If performance test after dicing can be carried out at a high temperature, it leads to reduction of packaging cost. However, since this performance test is performed in a state in which a semiconductor chip is stuck to an adhesive sheet such as a dicing tape, The pressure-sensitive adhesive sheet may be bent or excessively adhered to the pressure-sensitive adhesive sheet.

점착 시트가 변형되면, 반도체칩의 위치가 어긋나서 칩 위에 형성된 전극 패드와 검사 프로브와의 얼라인먼트가 자동으로 되지 않기 때문에 검사에 긴 시간이 필요하다. 게다가, 변형이 큰 경우에는 칩이 검사 프로브에 접촉하여 검사를 할 수 없게 될 우려가 있다. 또한, 반도체칩의 간격이 좁은 경우에는 칩끼리 접촉하고 칩의 파손이나 강도 저하를 초래할 우려가 있다. When the pressure sensitive adhesive sheet is deformed, the position of the semiconductor chip is shifted, so that alignment between the electrode pads formed on the chip and the inspection probe is not automated, and therefore, a long time is required for the inspection. In addition, when the deformation is large, there is a fear that the chip can not contact the inspection probe and can not be inspected. In addition, when the intervals of the semiconductor chips are narrow, there is a fear that the chips come into contact with each other, and breakage or strength of the chip is lowered.

또한, 점착 시트가 반도체칩에 과도하게 밀착되면 자외선 등을 조사하여 점착제층을 경화시켜도 점착제층의 점착력이 충분히 저하되지 않고 픽업이 곤란하게 되거나 점착물 잔류 등의 불량이 생기거나 하는 원인으로 된다. Further, if the pressure sensitive adhesive sheet is excessively adhered to the semiconductor chip, even if the pressure sensitive adhesive layer is cured by irradiating ultraviolet rays or the like, the pressure sensitive adhesive layer does not sufficiently lower the pressure sensitive adhesive layer, which makes it difficult to pick up the pressure sensitive adhesive layer.

본 발명은 이러한 사정에 비추어 이루어진 것이며, 반도체 웨이퍼를 가온한 상태에서 검사하는 것을 가능하게 하는 점착 시트를 제공하는 것이다. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and provides a pressure-sensitive adhesive sheet which makes it possible to inspect a semiconductor wafer in a heated state.

본 발명에 의하면, 반도체칩을 가열하면서 성능검사하는 공정에서 사용되는 점착 시트로서, 이 점착 시트는 기재 위에 점착제층이 설치된 점착 시트이며, 이 기재가 120℃에서 15분 가열했을 때의 열수축률이 1.0% ~5.0%이며, 이 점착제층이 (메트)아크릴산　에스테르 공중합체 100질량부와 광중합성 화합물 5~200질량부와 다관능 이소시아네이트 경화제 0.5~20질량부와 광중합개시제 0.1~20질량부와 점착 부여 수지 0~2질량부를 포함하는 것을 특징으로 하는, 반도체 검사용의 내열성 점착 시트가 제공된다. According to the present invention, there is provided a pressure-sensitive adhesive sheet for use in a process of heating and testing a semiconductor chip while heating the pressure-sensitive adhesive sheet, wherein the pressure-sensitive adhesive sheet is a pressure-sensitive adhesive sheet provided with a pressure-sensitive adhesive layer on a substrate, (Meth) acrylic acid ester copolymer, 5 to 200 parts by mass of a photopolymerizable compound, 0.5 to 20 parts by mass of a polyfunctional isocyanate curing agent and 0.1 to 20 parts by mass of a photopolymerization initiator, And 0 to 2 parts by mass of a resin to be imparted.

본 발명자들은 열수축성이 있는 필름을 점착 시트의 기재에 이용함으로써 가온　후의 점착 시트에 장력을 부여하여 변형을 억제할 수 있고，또한 가온에 의한 점착제층의 연화(軟化)는 점착제에 포함되는 점착 부여 수지의 연화가 요인이 되는 것을 알아냈다. The present inventors have found that the use of a heat-shrinkable film on a substrate of a pressure-sensitive adhesive sheet imparts tension to the pressure-sensitive adhesive sheet after heating to suppress deformation and softening of the pressure- It has been found that softening of the resin is a factor.

이 지견에 기초하여, 상기 범위의 열 수축률을 가지는 기재 위에 상기 조성의 점착제층이 설치된 점착 시트를 이용함으로써 반도체 웨이퍼를 가온한 상태에서 검사하는 것이 가능해지는 것을 알아내여 본 발명의 완성에 이르렀다. Based on this finding, it has been found that by using an adhesive sheet provided with a pressure-sensitive adhesive layer composition of the above composition on a substrate having a heat shrinkage rate in the above-mentioned range, the semiconductor wafer can be inspected in a warmed state.

이하, 본 발명의　여러 가지 실시 형태를 예시한다. 이하에 나타내는 실시 형태는 서로 조합가능하다. Hereinafter, various embodiments of the present invention will be described. The embodiments described below can be combined with each other.

바람직하게는, 상기 기재가 이축연신된 필름인 것을 특징으로 한다. Preferably, the substrate is a biaxially stretched film.

바람직하게는, 상기 점착 시트의 점착제층이 박리부여제를 포함한다. Preferably, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet comprises a release agent.

바람직하게는, 상기 박리부여제는 실리콘계 그라프트 공중합체로부터 이루어진다. Preferably, the release-imparting agent comprises a silicone-based graft copolymer.

바람직하게는, 상기 박리부여제의 첨가량은 (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 0.1~20질량부다. Preferably, the amount of the release agent added is 0.1 to 20 parts by mass based on 100 parts by mass of the (meth) acrylic acid ester copolymer.

바람직하게는, 상기 다관능 이소시아네이트 경화제가 이소시아네이트기를 3개 이상 가진다. Preferably, the polyfunctional isocyanate curing agent has three or more isocyanate groups.

바람직하게는, 상기 광중합개시제가 23℃에서부터 10℃/분의 승온속도로 승온했을 때의 질량감소율 10%로 되는 온도가 250℃ 이상이다. Preferably, the temperature at which the photopolymerization initiator has a mass reduction rate of 10% when it is heated at a temperature raising rate from 23 캜 to 10 캜 / minute is 250 캜 or higher.

본 발명이 다른 관점에 의하면, 반도체칩이 점착 시트에 첩부된 상태에서, 100~150℃의 스테이지 위에 상기 점착 시트가 상기 스테이지에 접하도록 얹어놓고 흡착 고정하는 흡착공정과, 상기 스테이지를 100~150℃로 가열하면서 상기　반도체칩의 성능을 검사하는 검사공정과, 상기 점착 시트에 활성광선을 조사하는 활성광선　조사공정과, 상기 점착 시트로부터 상기 반도체칩을 픽업하는 픽업공정을 포함하고, 상기 점착 시트는 상기 기재된 점착 시트인, 반도체　검사방법이 제공된다. According to another aspect of the present invention, there is provided a semiconductor device comprising: an adsorption step of placing the adhesive sheet in contact with the stage on a stage of 100 to 150 DEG C in a state where the semiconductor chip is attached to the adhesive sheet; And a pickup step of picking up the semiconductor chips from the pressure sensitive adhesive sheet, wherein the pressure sensitive adhesive sheet comprises a pressure sensitive adhesive sheet Is a pressure-sensitive adhesive sheet as described above.

바람직하게는, 상기 흡착공정 전에 점착 시트를 반도체 웨이퍼에 첩부하는 첩부공정과, 상기 반도체 웨이퍼를 다이싱하여 상기 반도체칩으로 하는 다이싱 공정을 더 구비한다. Preferably, the method further comprises an attaching step of attaching the adhesive sheet to the semiconductor wafer before the adsorption step, and a dicing step of dicing the semiconductor wafer to form the semiconductor chip.

본 발명에 의해, 가온에 의한 점착 시트의 변형 및 점착제층의 연화가 생기기 어려운 점착 시트가 제공되어, 반도체 웨이퍼를 가온한 상태에서 검사하는 것이 가능해진다. 종래, 가온 상태에서의 웨이퍼 검사는 반도체의 패키징 공정　후에 실시되었지만 본 발명에 의해, 가온 상태에서의 웨이퍼 검사를 패키징 공정　전에 실시할 수 있다. 즉, 본 발명에 의해, 가온 상태에서 불량이 있는 칩을 패키징 공정 전에 판별할 수 있기 때문에, 이 불량 칩을 패키징하지 않고 끝마칠 수 있어 패키징 코스트의 삭감으로 연결된다． According to the present invention, it is possible to provide a pressure-sensitive adhesive sheet which is resistant to deformation of the pressure-sensitive adhesive sheet and softening of the pressure-sensitive adhesive layer by heating, and the semiconductor wafer can be inspected in a heated state. Conventionally, inspection of wafers under a heating condition has been carried out after the packaging process of semiconductors, but according to the present invention, inspection of wafers under a heating condition can be carried out before the packaging process. That is, according to the present invention, a defective chip in a warm state can be discriminated before the packaging step, so that the defective chip can be finished without packaging, leading to reduction in packaging cost.

이하, 본 발명을 실시하기 위한 호적한 형태에 대하여 설명한다. 한편, 이하에 설명하는 실시 형태는 본 발명의 대표적인 실시 형태의 일례를 제시한 것이며, 이에 의해 본 발명의 범위가 좁게 해석되는 것은 아니다．Hereinafter, a preferred mode for carrying out the present invention will be described. On the other hand, the embodiment described below is an example of a representative embodiment of the present invention, and the scope of the present invention is not narrowly construed thereby.

1. 점착 시트 1. Adhesive sheet

(1) 기재 (1)

(2) 광경화형 점착제 (2) Photocurable adhesive

(2-1) 점착 부여 수지를 실질적으로 포함하지 않는다. (2-1) does not substantially contain the tackifier resin.

(2-2) (메트)아크릴산 에스테르 공중합체 (2-2) (meth) acrylic acid ester copolymer

(2-3) 광중합성 화합물 (2-3) Photopolymerizable compound

(2-4) 다관능 이소시아네이트 경화제 (2-4) Multifunctional isocyanate curing agent

(2-5) 광중합개시제 (2-5) Photopolymerization initiator

2. 반도체 검사 방법 2. Semiconductor inspection method

(1) 첩부공정 (1) Adhesive process

(2) 다이싱 공정 (2) Dicing process

(3) 흡착공정 (3) Adsorption process

(4) 검사공정 (4) Inspection process

(5) 활성광선 조사공정 (5) Active light irradiation process

(6) 픽업공정 (6) Pick-up process

1. 점착 시트 1. Adhesive sheet

본 발명에 따른 점착 시트는 열수축성이 있는 기재에 광경화형 점착제층(이하, 단지 「점착제층」이라고도 칭한다)을 적층하여 이루어지고 점착제층에 점착 부여 수지를 실질적으로 포함하지 않는 것을 특징으로 한다. 본 발명에 따른 점착 시트는 가온된 경우에도 변형되지 않는다. 또한, 본 발명에 따른 점착 시트는 점착 부여 수지의 연화에 기인한 점착제층의 연화가 거의 또는 전혀 생기지 않기 때문에, 반도체 웨이퍼에 과도하게 밀착되지 않는다. 따라서, 본 발명에 따른 점착 시트에서는, 점착 시트의 변형에 의한 검사시간의 장기화나 반도체칩의 파손　등을 방지할 수 있다. 게다가, 자외선 등의 조사에 의해 점착제층의 충분한 접착력의 저하를 얻을 수 있어, 픽업 불량이나 점착물 잔류를 방지할 수 있다. The pressure-sensitive adhesive sheet according to the present invention is characterized in that the pressure-sensitive adhesive layer is formed by laminating a photocurable pressure-sensitive adhesive layer (hereinafter, simply referred to as a pressure-sensitive adhesive layer) on a heat-shrinkable substrate and substantially no tackifier resin is contained in the pressure-sensitive adhesive layer. The pressure-sensitive adhesive sheet according to the present invention is not deformed even when heated. In addition, the pressure-sensitive adhesive sheet according to the present invention hardly causes softening of the pressure-sensitive adhesive layer due to softening of the pressure-sensitive adhesive resin, and thus does not excessively adhere to the semiconductor wafer. Therefore, in the pressure-sensitive adhesive sheet according to the present invention, it is possible to prevent the prolongation of the inspection time and the breakage of the semiconductor chip due to deformation of the pressure-sensitive adhesive sheet. In addition, sufficient adhesion of the pressure-sensitive adhesive layer can be lowered by irradiation with ultraviolet rays or the like, thereby making it possible to prevent poor pick-up and residual adhesive.

(1) 기재(基材) (1) Base Material

기재의 재료로서는 120℃에서 15분 가열했을 때의 열수축률이 1.0%~5.0%이며, 1.5%~4.0%인 것이 바람직하다. 열수축률이 1.0%보다 작으면, 가온했을 때의 기재의 수축이 작고 기재의 열팽창 등에 의해 점착 시트가 변형될 우려가 있다. 또한, 열수축률이 5.0%보다 크면 가온했을 때의 기재의 수축이 지나치게 커서 링 프레임(Ring frame)으로부터 점착 시트가 벗겨지거나 기재가 파단되거나 할 우려가 있다. As the material of the base material, it is preferable that the heat shrinkage rate when heated at 120 占 폚 for 15 minutes is 1.0% to 5.0%, and 1.5% to 4.0%. If the heat shrinkage ratio is less than 1.0%, shrinkage of the substrate when heated may be small, and the pressure sensitive adhesive sheet may be deformed due to thermal expansion of the substrate. If the heat shrinkage ratio is greater than 5.0%, shrinkage of the base material when heated may become excessively large, and the adhesive sheet may peel off from the ring frame or the base material may be broken.

여기서 열수축률이란 이하의 식으로 요구하는 값이다. The heat shrinkage rate is a value required by the following equation.

(L0-L1)/L0×100(%) (L 0 -L 1 ) / L 0 100 (%)

L0： 가열 전의 기재의 길이(10cm) L 0 is the length of the substrate before heating (10 cm)

L1： 120℃에서 15분 가열하고 실온까지 냉각한 후의 기재의 길이 L 1 : Length of substrate after heating at 120 ° C for 15 minutes and cooling to room temperature

또한, 기재는 이축연신되어 있는 것이 바람직하다. 이축연신되어 있음으로써 가열 시에 기재가 수축하기 쉬워진다. 이러한 기재로서는, 폴리에틸렌이나 폴리프로필렌 등의 폴리올레핀, 폴리스티렌, 폴리염화비닐　등을 들 수 있다. 기재의 형성 방법은 특히 한정되지 않지만, 예를 들면, T다이로부터 압출한 수지를 연신하여 시트 형상으로 성형하는 방법을 들 수 있다. 또한, 성능을 손상하지 않는 범위에서, 이들 기재에 산화 방지제나 대전 방지제, 윤활제, 블로킹(blocking) 방지제, 충전제 등의 첨가제가 포함되어 있어도 된다. Further, the base material is preferably biaxially stretched. By biaxially stretching, the substrate tends to shrink during heating. Examples of such a substrate include polyolefins such as polyethylene and polypropylene, polystyrene, and polyvinyl chloride. The method of forming the base material is not particularly limited, and for example, a method of stretching a resin extruded from a T-die to form a sheet. In addition, additives such as an antioxidant, an antistatic agent, a lubricant, a blocking agent, and a filler may be contained in these base materials to the extent that performance is not impaired.

기재는 상기 재료로 이루어지는 단층 혹은 다층의 필름 혹은 시트이면 되고 다른 재료로 이루어지는 필름 등을 적층한 것이어도 된다. 기재의 두께는 10~100μm, 바람직하게는 20~80μm이다. The base material may be a single layer or multi-layer film or sheet made of the above-described material, or a film made of another material or the like. The thickness of the substrate is 10 to 100 탆, preferably 20 to 80 탆.

기재에는 대전 방지 처리를 실시하는 것이 바람직하다. 대전 방지 처리로서는 기재에 대전 방지제를 배합하는 처리, 기재 표면에 대전 방지제를 도포하는 처리, 코로나 방전에 의한 처리가 있다. It is preferable that the substrate is subjected to an antistatic treatment. Examples of the antistatic treatment include a treatment of adding an antistatic agent to a substrate, a treatment of applying an antistatic agent to the surface of the substrate, and a treatment by corona discharge.

대전 방지제로서는, 예를 들면 4급 아민염 단량체 등을 이용할 수 있다. 4급 아민염 단량체로서는, 예를 들면 디메틸 아미노 에틸(메트)아크릴레이트 4급 염화물, 디에틸 아미노 에틸(메트)아크릴레이트 4급 염화물, 메틸에틸 아미노에틸(메트)아크릴레이트 4급 염화물, p-디메틸 아미노스티렌 4급 염화물, 및 p-디메틸 아미노스티렌 4급 염화물을 들 수 있다. 이 중, 디메틸 아미노 에틸 메트크릴레이트 4급 염화물이 바람직하다. As the antistatic agent, for example, quaternary amine salt monomers and the like can be used. Examples of the quaternary amine salt monomer include dimethylaminoethyl (meth) acrylate quaternary chloride, diethylaminoethyl (meth) acrylate quaternary chloride, methylethylaminoethyl (meth) acrylate quaternary chloride, p- Dimethylaminostyrene quaternary chloride, and p-dimethylaminostyrene quaternary chloride. Of these, dimethylaminoethyl methacrylate quaternary chloride is preferable.

(2) 광경화형 점착제 (2) Photocurable adhesive

본 발명에 따른 점착 시트의 점착제층을 형성하는 광경화형 점착제는 (메트)아크릴산 에스테르 공중합체와 광중합성 화합물과 다관능 이소시아네이트 경화제와 광중합개시제를 포함하고 점착 부여 수지를 실질적으로 포함하지 않는다. The photocurable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet according to the present invention comprises a (meth) acrylic acid ester copolymer, a photopolymerizable compound, a polyfunctional isocyanate curing agent and a photopolymerization initiator and substantially does not contain a tackifying resin.

(2-1) 점착 부여 수지를 실질적으로 포함하지 않는다. (2-1) does not substantially contain the tackifier resin.

가열에 의한 점착제층의 연화의 원인으로 되는 점착 부여 수지는 아크릴계 접착제의 점착성을 높이기 위하여 종래 배합되어 있는 수지로서, 특히 한정되지 않지만, 로진(rosin)계 수지, 테르펜계 수지, 지방족 석유수지, 방향족 석유수지, 수첨 석유수지, 쿠마론·인덴 수지, 스티렌계 수지, 크실렌 수지 및 이들 수지의 혼합물을 들 수 있다. The tackifier resin which causes the softening of the pressure-sensitive adhesive layer by heating is not particularly limited and may be any resin conventionally compounded in order to improve the tackiness of the acrylic adhesive. Examples thereof include rosin resins, terpene resins, aliphatic petroleum resins, Petroleum resin, hydrogenated petroleum resin, coumarone-indene resin, styrene-based resin, xylene resin, and mixtures of these resins.

점착제에는, 점착 부여 수지가 전혀 포함되지 않는 것이 바람직하지만, 가온 시에 점착제층의 연화를 거의 생기게 하지 않는 정도라면 점착제 중에 포함되어 있어도 되고, 구체적으로는, (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 2질량부 이하(바람직하게는 0.5질량부 이하)가 포함되어 있어도 된다. 즉, 「점착 부여 수지를 실질적으로 포함하지 않는다」라는 것은 점착 부여 수지의 배합량은 (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 0~2질량부(바람직하게는 0~0.5질량부)인 것을 의미한다. The pressure-sensitive adhesive preferably contains no tackifier resin at all, but may be included in the pressure-sensitive adhesive so long as it hardly causes softening of the pressure-sensitive adhesive layer at the time of heating. Specifically, 100 parts by mass of a (meth) 2 parts by mass or less (preferably 0.5 parts by mass or less) may be contained. That is, the phrase " substantially not containing the tackifier resin " means that the blending amount of the tackifier resin is 0 to 2 parts by mass (preferably 0 to 0.5 parts by mass) relative to 100 parts by mass of the (meth) acrylic acid ester copolymer it means.

점착제에는, 점착 부여 수지를 실질적으로 포함하지 않는 한, 박리부여제, 노화예방제, 충전제, 자외선 흡수제 및 광안정제 등의 각종 첨가제가 첨가되어 있어도 된다. 박리부여제의 첨가량은 특히 한정되지 않지만, (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 0.1~20질량부가 바람직하고 0.2~10질량부가 더욱 바람직하고 0.5~5질량부가 더욱 바람직하다. 박리부여제에는, 예를 들면 실리콘계 그라프트 중합체(또는 공중합체)를 이용할 수 있다. The pressure-sensitive adhesive may contain various additives such as a release agent, an anti-aging agent, a filler, an ultraviolet absorber, and a light stabilizer, as long as it does not substantially contain the tackifier resin. The amount of the release agent to be added is not particularly limited, but is preferably 0.1 to 20 parts by mass, more preferably 0.2 to 10 parts by mass, still more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the (meth) acrylic acid ester copolymer. As the releasing agent, for example, a silicone-based graft polymer (or a copolymer) can be used.

(2-2) (메트)아크릴산 에스테르 공중합체 (2-2) (meth) acrylic acid ester copolymer

(메트)아크릴산 에스테르 공중합체는 (메트)아크릴산 에스테르 단량체만의 중합체, 또는, (메트)아크릴산 에스테르 단량체와 비닐 화합물 단량체와의 공중합체이다. 한편, (메트)아크릴레이트라는 것은 아크릴레이트 및 메트아크릴레이트의 총칭이다. (메트)아크릴산 등의 (메트)를 포함하는 화합물 등도 마찬가지로, 명칭 중에 「메트」를 포함하는 화합물과 「메트」를 포함하지 않는 화합물의 총칭이다. (Meth) acrylic acid ester copolymer is a copolymer of a (meth) acrylic acid ester monomer alone or a (meth) acrylic acid ester monomer and a vinyl compound monomer. On the other hand, (meth) acrylate is a collective term for acrylate and methacrylate. (Meth) acrylic acid and the like (meth) acrylic acid and the like are also collectively referred to as compounds containing "meth" and compounds not containing "meth" in the name.

(메트)아크릴산 에스테르의 단량체로서는, 예를 들면 부틸(메트)아크릴레이트, 2-부틸(메트)아크릴레이트, t-부틸(메트)아크릴레이트, 펜틸(메트)아크릴레이트, 옥틸(메트)아크릴레이트, 2-에틸헥실(메트)아크릴레이트, 노닐(메트)아크릴레이트, 데실 (메트)아크릴레이트, 라우릴(메트)아크릴레이트, 메틸(메트)아크릴레이트, 에틸(메트)아크릴레이트, 이소프로필(메트)아크릴레이트, 트리데실(메트)아크릴레이트, 미리스틸(메트)아크릴레이트, 세틸(메트)아크릴레이트, 스테아릴(메트)아크릴레이트, 사이클로헥실(메트)아크릴레이트, 이소보닐(메트)아크릴레이트, 디시클로펜타닐(메트)아크릴레이트, 벤질(메트)아크릴레이트, 메톡시 에틸(메트)아크릴레이트, 에톡시 에틸(메트)아크릴레이트, 부톡시 메틸(메트)아크릴레이트 및 에톡시-n-프로필(메트)아크릴레이트, 2-히드록시 에틸(메트)아크릴레이트, 2-히드록시 프로필(메트)아크릴레이트, 4-히드록시부틸(메트)아크릴레이트를 들 수 있다. Examples of the monomer of the (meth) acrylate include butyl (meth) acrylate, 2-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, (Meth) acrylate, ethyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, lauryl Acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isobonyl (meth) acrylate, (Meth) acrylate, methoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate, butoxymethyl (meth) acrylate and ethoxy-n- Propyl (meth) acrylate Acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate and 4-hydroxybutyl (meth) acrylate.

(메트)아크릴산 에스테르 단량체에 공중합 가능한 비닐화합물 단량체로서는, 카르복실기, 에폭시기, 아미드기, 아미노기, 메틸올기, 술폰산기, 술팜산기 또는 (아)인산 에스테르기와 같은 관능기　군의 1종 이상을 함유하는 관능기 함유 단량체를 들 수 있다. Examples of the vinyl compound monomer copolymerizable with the (meth) acrylic acid ester monomer include a compound having a functional group containing at least one functional group group such as a carboxyl group, an epoxy group, an amide group, an amino group, a methylol group, a sulfonic acid group, a sulfamic acid group, Monomers.

카르복실기를 가지는 단량체로서는, 예를 들면, (메트)아크릴산, 크로톤산, 말레산, 이타콘산, 푸마르산, 아크릴 아미드 N-글리콜산 및 계피산이 있다. Examples of the monomer having a carboxyl group include (meth) acrylic acid, crotonic acid, maleic acid, itaconic acid, fumaric acid, acrylamide N-glycolic acid and cinnamic acid.

에폭시기를 가지는 단량체로서는, 예를 들면, 알릴글리시딜에테르 및 (메트)아크릴산 글리시딜 에테르가 있다. Examples of the monomer having an epoxy group include allyl glycidyl ether and (meth) acrylate glycidyl ether.

아미드기를 가지는 단량체로서는, 예를 들면, (메트)아크릴 아미드가 있다. As the monomer having an amide group, for example, there is (meth) acrylamide.

아미노기를 가지는 단량체로서는, 예를 들면, N, N-디메틸 아미노 에틸(메트)아크릴레이트가 있다. As the monomer having an amino group, for example, there is N, N-dimethylaminoethyl (meth) acrylate.

메틸올기를 가지는 단량체로서는, 예를 들면, N-메틸올 아크릴아미드가 있다. As the monomer having a methylol group, for example, there is N-methylol acrylamide.

(2-3) 광중합성 화합물 (2-3) Photopolymerizable compound

광중합성 화합물로서는, 예를 들면, 트리메틸올프로판 트리메트아크릴레이트, 테트라메틸올메탄　테트라아크릴레이트, 펜타에리스리톨 트리아크릴레이트, 펜타에리스리톨　테트라아크릴레이트, 디펜타에리스리톨　모노히드록시　펜타아크릴레이트, 디펜타에리스리톨　헥사아크릴레이트, 1,4-부틸렌글리콜　디아크릴레이트, 1,6-헥산디올　디아크릴레이트, 폴리에틸렌 글리콜 디아크릴레이트, 시아누르산 트리에틸아크릴레이트, 시판의 올리고에스테르　아크릴레이트　등을 이용할 수 있다. Examples of the photopolymerizable compound include, for example, trimethylolpropane trimethacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, cyanuric triethyl acrylate, commercially available oligoester acrylate, and the like can be used .

광중합성 화합물로서, 상기 아크릴레이트계 화합물의 이외에, 우레탄 아크릴레이트 올리고머를 이용할 수도 있다. 우레탄 아크릴레이트 올리고머는 폴리에스테르형 또는 폴리에테르형 등의 폴리올 화합물과 다가 이소시아네이트 화합물을 반응시켜 얻어진 말단 이소시아네이트 우레탄폴리머에 히드록시기를 가지는 (메트)아크릴레이트를 반응시켜 얻을 수 있다. As the photopolymerizable compound, urethane acrylate oligomer may be used in addition to the above acrylate compound. The urethane acrylate oligomer can be obtained by reacting a (meth) acrylate having a hydroxy group with a terminal isocyanate urethane polymer obtained by reacting a polyisocyanate compound with a polyol compound such as polyester type or polyether type.

다가 이소시아네이트 화합물에는, 예를 들면, 2,4-톨릴렌 디이소시아네이트, 2,6-톨릴렌 디이소시아네이트, 1,3-크실렌 디이소시아네이트, 1,4-크실렌 디이소시아네이트, 디페닐메탄 4,4-디이소시아네이트, 트리메틸헥사메틸렌 디이소시아네이트, 헥사메틸렌　디이소시아네이트, 이소포론 디이소시아네이트　등을 이용할 수 있다. 또한, 히드록시기를 가지는 (메트)아크릴레이트에는 예를 들면, 2-히드록시 에틸(메트)아크릴레이트, 2-히드록시 프로필(메트)아크릴레이트, 폴리에틸렌 글리콜(메트)아크릴레이트, 펜타에리스리톨 트리아크릴레이트, 글리시돌 디(메트)아크릴레이트, 디펜타에리스리톨 모노히드록시 펜타아크릴레이트 등을 이용할 수 있다. Examples of the polyvalent isocyanate compound include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, Diisocyanate, trimethylhexamethylene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, and the like. Examples of the (meth) acrylate having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, pentaerythritol triacrylate , Glycidol di (meth) acrylate, dipentaerythritol monohydroxypentaacrylate, and the like.

광중합성 화합물로서는, 비닐기를 4개 이상 가지는 우레탄 아크릴레이트 올리고머가 자외선 등의 조사 후의 점착제의 경화가 양호한 점에서 바람직하다. As the photopolymerizable compound, a urethane acrylate oligomer having four or more vinyl groups is preferable in view of good curing of the pressure-sensitive adhesive after irradiation with ultraviolet rays or the like.

광중합성 화합물의 배합량은 (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 5~200질량부이며, 20~180질량부가 더욱 바람직하고, 50~150질량부가 더더욱 바람직하다. 광중합성 화합물의 배합량을 적게 하면 자외선 등의 조사 후의 점착 시트의 박리성이 저하되고 반도체칩의 픽업 불량이 생기기 쉬워진다. 한편, 광중합성 화합물의 배합량을 많게 하면 다이싱 시 점착물의 플라잉에 의해 픽업 불량이 생기기 쉬워지는 동시에 반응 잔류물에 의한 미소한 점착물 잔류가 발생하여, 오염의 원인이 된다. The blending amount of the photopolymerizable compound is 5 to 200 parts by mass, more preferably 20 to 180 parts by mass, further preferably 50 to 150 parts by mass, per 100 parts by mass of the (meth) acrylic acid ester copolymer. If the compounding amount of the photopolymerizable compound is decreased, the peeling property of the pressure sensitive adhesive sheet after irradiation with ultraviolet rays or the like is lowered, and the pickup failure of the semiconductor chip is apt to occur. On the other hand, if the compounding amount of the photopolymerizable compound is increased, the pick-up defect tends to occur due to the flying of the adherend during dicing, and minute residue of adhesive residue due to the reaction residue is generated, which causes contamination.

(2-4) 다관능 이소시아네이트 경화제 (2-4) Multifunctional isocyanate curing agent

다관능 이소시아네이트 경화제는 이소시아네이트기를 2개 이상 가지는 것이며, 예를 들면 방향족 폴리이소시아네이트, 지방족 폴리이소시아네이트, 지환족 폴리이소시아네이트, 이들의 이합체나 삼합체，어덕트체 등을 이용할 수 있다. The polyfunctional isocyanate curing agent is one having two or more isocyanate groups, and examples thereof include aromatic polyisocyanates, aliphatic polyisocyanates, alicyclic polyisocyanates, dimers and trimesters thereof, and adducts thereof.

방향족 폴리이소시아네이트로서는, 예를 들면 1,3-페닐렌 디이소시아네이트, 4,4＇-디페닐 디이소시아네이트, 1,4-페닐렌 디이소시아네이트, 4,4＇-디페닐메탄 디이소시아네이트, 2,4-톨릴렌 디이소시아네이트, 2,6-톨릴렌 디이소시아네이트, 4,4＇-톨리이딘　디이소시아네이트, 2,4,6-트리이소시아네이트　톨루엔, 1,3,5-트리이소시아네이트　벤젠, 디아니시딘　디이소시아네이트, 4,4＇-디페닐에테르　디이소시아네이트, 4,4＇,4＂-트리페닐메탄　트리이소시아네이트, ω,ω'-디이소시아네이트-1,3-디메틸 벤젠, ω,ω'-디이소시아네이트-1,4-디메틸벤젠, ω,ω'-디이소시아네이트-1,4-디에틸 벤젠, 1,4-테트라메틸 크실릴렌 디이소시아네이트 및 1,3-테트라메틸 크실릴렌 디이소시아네이트가 있다. Examples of the aromatic polyisocyanate include 1,3-phenylene diisocyanate, 4,4'-diphenyl diisocyanate, 1,4-phenylene diisocyanate, 4,4'-diphenylmethane diisocyanate, 2,4 Tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'-tolylidine diisocyanate, 2,4,6-triisocyanate toluene, 1,3,5-triisocyanate benzene, dianisidine di diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 ', 4 "- triphenylmethane triisocyanate, ω, ω'- diisocyanate-1,3-dimethylbenzene, ω, ω'- diisocyanate - 1,4-dimethylbenzene,?,? '- diisocyanate-1,4-diethylbenzene, 1,4-tetramethylxylylene diisocyanate and 1,3-tetramethylxylylene diisocyanate.

지방족 폴리이소시아네이트로서는, 예를 들면 트리메틸렌　디이소시아네트, 테트라메틸렌　디이소시아네이트, 헥사메틸렌　디이소시아네이트, 펜타메틸렌　디이소시아네이트, 1,2-프로필렌 디이소시아네이트, 2,3-부틸렌　디이소시아네이트, 1,3-부틸렌　디이소시아네이트, 도데카메틸렌　디이소시아네이트 및 2,4,4-트리메틸헥사메틸렌 디이소시아네이트가 있다. Examples of the aliphatic polyisocyanate include trimethylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, pentamethylene diisocyanate, 1,2-propylene diisocyanate, 2,3-butylene diisocyanate, 1,3- Butylene diisocyanate, dodecamethylene diisocyanate and 2,4,4-trimethylhexamethylene diisocyanate.

지환족 폴리이소시아네이트로서는, 예를 들면 3-이소시아네이토메틸-3,5,5-트리메틸시클로헥실 이소시아네이트, 1,3-시클로펜탄 디이소시아네이트, 1,3-시클로헥산　디이소시아네이트, 1,4-시클로헥산 디이소시아네이트, 메틸-2,4-시클로헥산 디이소시아네이트, 메틸-2,6-시클로헥산 디이소시아네이트, 4,4＇-메틸렌비스(시클로헥실　이소시아네이트), 1,4-비스(이소시아네이토메틸)시클로헥산 및 1,4-비스(이소시아네이트 메틸)시클로헥산이 있다. Examples of the alicyclic polyisocyanate include 3-isocyanatomethyl-3,5,5-trimethylcyclohexyl isocyanate, 1,3-cyclopentane diisocyanate, 1,3-cyclohexane diisocyanate, 1,4- Cyclohexane diisocyanate, methyl-2,4-cyclohexane diisocyanate, methyl-2,6-cyclohexane diisocyanate, 4,4'-methylene bis (cyclohexyl isocyanate), 1,4- Methyl) cyclohexane and 1,4-bis (isocyanatomethyl) cyclohexane.

이합체나 삼합체, 어덕트체로서는, 예를 들면 디페닐메탄 디이소시아네이트의 이합체, 헥사메틸렌디이소시아네이트의 삼합체, 트리메틸올프로판과 톨릴렌 디이소시아네이트의 어덕트체, 트리메틸올프로판과 헥사메틸렌디이소시아네이트의 어덕트체가 있다. Examples of dimers, trimesters and adducts include dimers of diphenylmethane diisocyanate, trimers of hexamethylene diisocyanate, adducts of trimethylolpropane and tolylene diisocyanate, trimethylolpropane and hexamethylene diisocyanate There is an duct body of.

상술한 폴리이소시아네이트 중, 이소시아네이트기를 3개 이상 가지는 것이 바람직하고, 특히 헥사메틸렌 디이소시아네이트의 삼합체, 트리메틸올프로판과 톨릴렌 디이소시아네이트의 어덕트체, 트리메틸올프로판과 헥사메틸렌 디이소시아네이트의 어덕트체가 바람직하다. Among the polyisocyanates described above, it is preferable to have three or more isocyanate groups, and in particular, triamines of hexamethylene diisocyanate, adducts of trimethylolpropane and tolylene diisocyanate, adducts of trimethylolpropane and hexamethylene diisocyanate desirable.

다관능 이소시아네이트 경화제의 배합비는 (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 0.5~20질량부이며, 1~10질량부가 바람직하다. 다관능 이소시아네이트 경화제가 0.5질량부 이상이면, 점착력이 지나치게 강하지 않기 때문에, 픽업 불량의 발생을 억제할 수 있다. 다관능 이소시아네이트 경화제가 20질량부 이하이면, 점착력이 저하되지 않아 다이싱 때에 반도체칩의 유지성이 유지된다. The mixing ratio of the polyfunctional isocyanate curing agent is 0.5 to 20 parts by mass, preferably 1 to 10 parts by mass, per 100 parts by mass of the (meth) acrylic acid ester copolymer. If the amount of the polyfunctional isocyanate curing agent is 0.5 parts by mass or more, the adhesive force is not excessively strong, so that the occurrence of pickup failure can be suppressed. When the amount of the polyfunctional isocyanate curing agent is 20 parts by mass or less, the adhesive force is not lowered, and the retention of the semiconductor chip at the time of dicing is maintained.

(2-5) 광중합개시제 (2-5) Photopolymerization initiator

광중합개시제에는, 벤조인, 벤조인 알킬에테르류, 아세토페논류, 안트라퀴논류, 티오크산톤류, 케탈류, 벤조페논류 또는 크산톤류 등을 이용할 수 있다. As the photopolymerization initiator, benzoin, benzoin alkyl ethers, acetophenones, anthraquinones, thioxanthones, ketals, benzophenones, xanthones and the like can be used.

벤조인으로서는, 예를 들면 벤조인, 벤조인 메틸에테르, 벤조인 에틸에테르, 벤조인 프로필에테르 등이 있다. Examples of the benzoin include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether and the like.

아세토페논류로서는, 예를 들면 벤조인 알킬에테르류, 아세토페논, 2,2-디메톡시-2-아세토페논, 2,2-디에톡시-2-아세토페논, 1,1-디클로로 아세토페논 등이 있다. Examples of the acetophenones include benzoin alkyl ethers, acetophenone, 2,2-dimethoxy-2-acetophenone, 2,2-diethoxy-2-acetophenone, 1,1-dichloroacetophenone and the like have.

안트라퀴논류로서는, 2-메틸 안트라퀴논, 2-에틸 안트라퀴논, 2-터셔리부틸 안트라퀴논, 1-클로로 안트라퀴논 등이 있다. Examples of the anthraquinones include 2-methyl anthraquinone, 2-ethyl anthraquinone, 2-tertiary butyl anthraquinone, 1-chloro anthraquinone, and the like.

티오크산톤류로서는, 예를 들면 2,4-디메틸 티오크산톤, 2,4-디이소프로필 티오크산톤, 2-클로로 티오크산톤, 2,4-디이소프로필 티오크산톤 등이 있다. The thioxanthones include, for example, 2,4-dimethylthioxanthone, 2,4-diisopropylthioxanthone, 2-chlorothioxanthone and 2,4-diisopropylthioxanthone.

케탈류로서는, 예를 들면 아세토페논 디메틸케탈, 벤질 디메틸케탈, 벤질디페닐 설파이드, 테트라메틸티우람 모노설파이드, 아조비스이소부티로니트릴, 디벤질, 디아세틸, β-크롤 안트라퀴논 등이 있다. Examples of the ketalization include acetophenone dimethyl ketal, benzyldimethyl ketal, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, and β-chloroanthraquinone.

광중합개시제는, 온도 23℃에서부터, 10℃/분의 승온 속도로 500℃까지 승온하고 질량감소율이 10%가 되었을 때의 온도가 250℃ 이상인 것이 바람직하다. 후술하는 가온공정에서 웨이퍼 등에 첩부된 점착 시트를 100~150℃로 가온할 때, 광중합개시제가 휘발 또는 열화하면, 후공정인 광조사 공정에서의 점착제층의 경화가 불충분하게 되고, 충분한 접착력의 저하를 얻을 수 없어, 이어지는 픽업공정에서의 픽업 불량의 요인이 된다. 이 때문에, 상기와 같은 성상을 가지고 가온에 의한 휘발이나 열화가 생기기 어려운 광중합개시제를 사용하는 것이 바람직하다. It is preferable that the photopolymerization initiator has a temperature of not lower than 250 占 폚 when the temperature is raised from 23 占 폚 to 500 占 폚 at a heating rate of 10 占 폚 / min and the mass reduction rate is 10%. When the pressure-sensitive adhesive sheet applied to a wafer or the like in a heating step described later is heated to 100 to 150 占 폚, when the photopolymerization initiator is volatilized or deteriorated, curing of the pressure-sensitive adhesive layer in the subsequent light irradiation step becomes insufficient, , Which results in a pickup failure in the subsequent pickup process. For this reason, it is preferable to use a photopolymerization initiator having the above-described properties and hardly causing volatilization or deterioration due to heating.

상기 온도가 250℃ 이상인 광중합개시제로서는, 에탄온, 1-[9-에틸-6-(2-메틸 벤조일)-9H-카르바졸-3-일]-, 1-(O-아세틸 옥심)(BASF재팬사제, 제품명 IRGACURE OXE02), 2,4,6-트리메틸벤조일-디페닐-포스핀 옥사이드(BASF재팬사제, 제품명 LUCIRIN TPO), 및 2-히드록시-1-{4-[4-(2-히드록시-2-메틸-프로피오닐)-벤질]-페닐}-2-메틸-프로판-1-온(BASF재팬사제, 제품명 IRGACURE127), 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부탄온-1(BASF재팬사제, 제품명 IRGACURE369), 2-디메틸 아미노-2-(4-메틸-벤질)-1-(4-모르폴린-4-일-페닐)-부탄-1-온(BASF재팬사제, 제품명 IRGACURE379), 비스(2,4,6-트리메틸벤조일)-페닐포스핀 옥사이드(BASF재팬사제, 제품명 IRGACURE819) 등을 들 수 있다. Examples of the photopolymerization initiator having a temperature of 250 ° C or higher include ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol- (Product name: LUCIRIN TPO, manufactured by BASF Japan) and 2-hydroxy-1- {4- [4- (2- Benzyl] -phenyl} -2-methyl-propan-1-one (product name IRGACURE127 available from BASF Japan), 2-benzyl-2-dimethylamino-1- (4-morpholino-propionyl) (4-methyl-benzyl) -1- (4-morpholin-4-yl-phenyl) -butanone-1 (product name: IRGACURE369 manufactured by BASF Japan) (Product name: IRGACURE 379, manufactured by BASF Japan) and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (product name: IRGACURE819 manufactured by BASF Japan).

이 중, 특히 상기 온도가 270℃ 이상인, 에탄온, 1-[9-에틸-6-(2-메틸 벤조일)-9H-카르바졸-3-일]-, 1-(O-아세틸 옥심)(BASF재팬사제, 제품명 IRGACURE OXE02), 2,4,6-트리메틸 벤조일-디페닐-포스핀 옥사이드(BASF재팬사제, 제품명LUCIRIN TPO), 및 2-히드록시-1-{4-[4-(2-히드록시-2-메틸-프로피오닐)-벤질]-페닐}-2-메틸-프로판-1-온(BASF재팬사제, 제품명IRGACURE127)이 바람직하다. Particularly, ethane, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -, 1- (O-acetyloxime) (Trade name: IRGACURE OXE02 manufactured by BASF Japan), 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide (product name: LUCIRIN TPO manufactured by BASF Japan), and 2-hydroxy-1- {4- [4- -Benzyl] -phenyl} -2-methyl-propan-1-one (product name IRGACURE127 available from BASF Japan) is preferred.

광중합개시제의 배합량은 (메트)아크릴산 에스테르 중합체 100질량부에 대하여 0.1~20질량부이며, 0.2~10질량부가 더욱 바람직하고, 0.5~5질량부가 더더욱 바람직하다. 배합량이 지나치게 적으면, 방사선 조사 후의 점착 시트의 박리성이 저하되고, 반도체칩의 픽업 불량이 생기기 쉬워진다. 한편, 배합량이 지나치게 많으면, 광중합개시제가 점착제표면으로 흡출(Bleed out)하여 오염의 원인이 된다. The blending amount of the photopolymerization initiator is preferably from 0.1 to 20 parts by mass, more preferably from 0.2 to 10 parts by mass, further preferably from 0.5 to 5 parts by mass, per 100 parts by mass of the (meth) acrylic acid ester polymer. If the compounding amount is too small, the releasability of the pressure-sensitive adhesive sheet after the irradiation with radiation is lowered, and the pickup failure of the semiconductor chip is apt to occur. On the other hand, if the blending amount is too large, the photopolymerization initiator may bleed out to the surface of the pressure-sensitive adhesive, causing contamination.

광중합개시제에는 필요에 따라 종래 공지의 광중합촉진제를 1종 또는 2종 이상을 조합시켜 병용해도 된다. 광중합촉진제에는, 안식향산계나 제3급 아민 등을 이용할 수 있다. 제3급 아민으로서는, 트리에틸아민, 테드라에틸 펜타아민, 디메틸 아미노에틸 등을 들 수 있다. The photopolymerization initiator may be used in combination with one or more kinds of conventionally known photopolymerization accelerators as necessary. As the photopolymerization accelerator, benzoic acid or a tertiary amine can be used. Examples of tertiary amines include triethylamine, tetraethylpentanamine, dimethylaminoethyl and the like.

점착제층의 두께는 3μm 이상 100μm가 바람직하고, 5μm 이상 20μm 이하가 특히 바람직하다. 점착제층이 지나치게 두꺼우면 점착력이 지나치게 높아져 픽업성이 저하된다. 또한, 점착제층이 지나치게 얇으면 점착력이 지나치게 낮아져, 다이싱 때의 칩 유지성이 저하되어, 링 프레임과 시트의 사이에서 박리가 생기는 경우가 있다. The thickness of the pressure-sensitive adhesive layer is preferably from 3 탆 to 100 탆, particularly preferably from 5 탆 to 20 탆. If the pressure-sensitive adhesive layer is too thick, the adhesive strength becomes too high, and the pickup property is deteriorated. In addition, if the pressure-sensitive adhesive layer is too thin, the adhesive force becomes too low, and chip retention at the time of dicing is lowered, and peeling may occur between the ring frame and the sheet.

2. 반도체 검사 방법 2. Semiconductor inspection method

이하, 본 발명에 따른 반도체 검사 방법의 구체적인 공정을 순서대로 설명한다. 이하에 나타내는 반도체 검사 방법은 반도체장치의 제조공정의 일부이다. Hereinafter, specific processes of the semiconductor inspection method according to the present invention will be described in order. The semiconductor inspection method described below is a part of the manufacturing process of the semiconductor device.

(1) 첩부공정 (1) Adhesive process

먼저, 첩부공정에서 점착 시트를 반도체 웨이퍼와 링 프레임에 첩부한다. 반도체 웨이퍼는 실리콘 웨이퍼 및 질화 갈륨 웨이퍼, 탄화 규소 웨이퍼, 사파이어 웨이퍼 등의 종래 범용의 웨이퍼이면 된다. 본원 명세서에서, 「반도체 웨이퍼」는 수지 밀봉된 패키지 기판이나 LED기판, 유리기판 등의 반도체 기판을 포함한다. First, in the attaching step, the adhesive sheet is stuck to the semiconductor wafer and the ring frame. The semiconductor wafer may be a conventional wafer such as a silicon wafer, a gallium nitride wafer, a silicon carbide wafer, or a sapphire wafer. In the present specification, the term " semiconductor wafer " includes a semiconductor substrate such as a resin-sealed package substrate or an LED substrate or a glass substrate.

(2) 다이싱 공정 (2) Dicing process

다이싱 공정에서는 반도체 웨이퍼를 다이싱하여 반도체칩으로 한다. 본원 명세서에서 「반도체칩」은 MEMS(Micro Electro Mechanical Systems)나 트랜지스터, 다이오드, LED 등의 반도체부품을 포함한다. In the dicing step, the semiconductor wafer is diced into a semiconductor chip. As used herein, the term " semiconductor chip " includes semiconductor components such as MEMS (Micro Electro Mechanical Systems), transistors, diodes, and LEDs.

(3) 흡착공정 (3) Adsorption process

흡착공정에서는, 반도체칩이 점착 시트에 첩부된 상태에서 100~150℃의 스테이지 위에 상기 점착 시트가 상기 스테이지에 접하도록 얹어놓고 흡착 고정한다. 이 흡착공정은 다이싱 공정에서 얻어진 반도체칩을 점착 시트로부터 떼지 않고 다이싱 공정에서 이용한 점착 시트를 그대로 스테이지에 흡착시키는 것에 의해 실시해도 되고 다이싱 공정에서 얻어진 반도체칩을 점착 시트로부터 뗀 후에 반도체칩을 다른 점착 시트에 붙이고 이 점착 시트를 스테이지에 흡착시키는 것에 의해 실시해도 된다. In the adsorption step, the adhesive sheet is placed on the stage at 100 to 150 ° C in a state where the semiconductor chip is attached to the adhesive sheet, and the adhesive sheet is fixed by suction. This adsorption step may be carried out by adsorbing the adhesive sheet used in the dicing step directly on the stage without removing the semiconductor chip obtained in the dicing step from the adhesive sheet, or after removing the semiconductor chip obtained in the dicing step from the adhesive sheet, May be attached to another adhesive sheet, and the adhesive sheet may be adsorbed on the stage.

(4) 검사공정 (4) Inspection process

검사공정에서는 반도체칩에 형성된 회로의 시험을 하기 때문에 흡착공정 후에 상기 스테이지를 100~150℃로 가열하면서 상기 반도체칩의 성능을 검사한다. 가온 시간은 예를 들면 15분~5시간이다. In the inspection step, since the circuit formed on the semiconductor chip is tested, the performance of the semiconductor chip is inspected while heating the stage to 100 to 150 DEG C after the adsorption step. The heating time is, for example, 15 minutes to 5 hours.

본 발명에 따른 점착 시트는, 가온 되었을 경우에 기재가 수축하여, 링 프레임에 고정된 점착 시트에 탄력이 생기기 때문에 점착 시트가 휘어 변형되지 않는다. 또한, 점착 부여 수지의 연화에 기인한 점착제층의 연화가 거의 또는 전혀 생기지 않기 때문에, 반도체 웨이퍼에 과도하게 밀착되지 않는다. 따라서, 본 발명에 검사 방법에서는, 점착 시트의 변형에 따른 검사공정의 장시간화나 칩의 파손을 방지할 수 있고, 게다가 후술하는 활성광선 조사공정 및 픽업공정에서 활성광선의 조사에 의해 점착제층의 충분한 접착력의 저하가 얻어지고 픽업 불량이나 점착물 잔류를 방지할 수 있다. In the pressure-sensitive adhesive sheet according to the present invention, when heated, the base material shrinks, and the pressure-sensitive adhesive sheet fixed to the ring frame generates elasticity, so that the pressure-sensitive adhesive sheet is not warped and deformed. Further, since the softening of the pressure-sensitive adhesive layer due to the softening of the tackifying resin hardly occurs or does not occur at all, it is not excessively adhered to the semiconductor wafer. Therefore, in the inspection method of the present invention, it is possible to prevent the prolongation of the inspection process and breakage of the chip due to the deformation of the pressure-sensitive adhesive sheet, and further, by irradiation of actinic rays in the actinic- The deterioration of the adhesive force can be obtained and it is possible to prevent the pickup failure and the adhesive residue.

(5) 활성광선 조사공정 (5) Active light irradiation process

광조사공정에서는, 기재 측에서 광경화형 점착제층에 자외선 등의 활성광선을 조사한다. 자외선의 광원으로서는, 저압수은등, 고압수은등, 초고압수은등, 메탈 할라이드 램프, 블랙 라이트 등을 이용할 수 있다. In the light irradiation step, an actinic ray such as ultraviolet ray is irradiated to the photocurable pressure-sensitive adhesive layer on the substrate side. As the light source of ultraviolet rays, a low pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a metal halide lamp, a black light and the like can be used.

광조사에 의해 점착제층은 삼차원　망상화(網狀化)하여 경화하고 점착제층의 점착력이 저하된다. 이 경우, 상술한 바와　같이, 본 발명에 따른 점착 시트는 가온해도 웨이퍼 등에 과도하게 밀착되지 않기 때문에，활성광선의 조사에 의해 충분한 접착력의 저하를 얻을 수 있다. By the irradiation of light, the pressure-sensitive adhesive layer is three-dimensionally networked and hardened, and the adhesive force of the pressure-sensitive adhesive layer is lowered. In this case, as described above, since the pressure-sensitive adhesive sheet according to the present invention does not excessively adhere to a wafer or the like even if it is warmed, a sufficient decrease in adhesive force can be obtained by irradiation with actinic rays.

(6) 픽업공정 (6) Pick-up process

픽업공정에서는, 점착 시트의 점착제층으로부터 반도체칩을 박리한다. 이때, 본 발명에 따른 점착 시트에서는 자외선 등의 조사에 의해 충분한 접착력의 저하를 얻을 수 있기 때문에 칩 또는 부품과 점착제층과의 사이의 박리가 용이하게 되고, 양호한 픽업성을 얻을 수 있고, 점착물 잔류 등의 불량이 생길 일도 없다. 픽업의 방법으로서는, 별도의 점착 시트에 반도체칩을 전사하는 방법이나 점착 시트의 이면쪽에서 스퀴지하여 박리하는 방법, 혹은 니들 핀 등으로 밀어올리는 방법을 들 수 있다. 또한, 필요에 따라, 픽업공정 전에 익스팬디드 공정을 설치해도 된다. 익스팬디드 공정에서는, 점착 시트를 잡아늘여 반도체칩끼리의 간격을 넓혀 픽업하기 쉽게 한다. In the pickup process, the semiconductor chip is peeled from the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet. At this time, in the pressure-sensitive adhesive sheet according to the present invention, sufficient adhesion can be lowered by irradiation with ultraviolet rays or the like, so that peeling between the chip or the component and the pressure-sensitive adhesive layer is facilitated, There is no defect such as residual. Examples of the pick-up method include a method of transferring a semiconductor chip to a separate pressure sensitive adhesive sheet, a method of squeegeing and peeling off the back side of the pressure sensitive adhesive sheet, or a method of pushing up with a needle pin or the like. If necessary, an expediting process may be provided before the pickup process. In the exposing process, the pressure sensitive adhesive sheet is stretched to widen the interval between the semiconductor chips, thereby making it easier to pick up the adhesive sheet.

픽업공정 후는, 픽업한 칩 또는 부품을 다이 어태치 페이스트(Die attach paste)를 개재하여 리드 프레임에 탑재한다. 탑재 후, 다이 어태치 페이스트(Die attach paste)를 가열하고 칩 또는 부품과 리드 프레임을 가열 접착한다. 그 후, 리드 프레임에 탑재한 칩 또는 부품을 수지로 몰드한다. After the pickup process, the picked-up chip or part is mounted on the lead frame via a die attach paste. After mounting, heat the die attach paste and heat bond the chips or components to the lead frame. Thereafter, a chip or a component mounted on the lead frame is molded with a resin.

실시예Example

<실시예 1> &Lt; Example 1 >

「표 1」에 나타내는 배합에 따라 광경화형 점착제를 조제했다. 광경화형 점착제를 폴리에틸렌 테레프탈레이트제의 세퍼레이터 필름 위에 도포하고 건조 후의 점착층의 두께가 10μm가 되도록 도공했다. 이 점착층을 기재에 적층하고 40℃에서 7일간 숙성하여 점착 시트를 얻었다. 기재(K-1)에는 두께 30μm의 이축연신 폴리프로필렌 필름(왕자 에프텍스사제, FC-201)을 이용했다. A photocurable pressure-sensitive adhesive was prepared according to the formulation shown in Table 1. The photocurable pressure-sensitive adhesive was applied onto a separator film made of polyethylene terephthalate and was applied so that the thickness of the pressure-sensitive adhesive layer after drying was 10 占 퐉. This adhesive layer was laminated on a substrate and aged at 40 캜 for 7 days to obtain a pressure-sensitive adhesive sheet. For the substrate (K-1), a biaxially stretched polypropylene film (FC-201, manufactured by Prince Efton) having a thickness of 30 μm was used.

Figure pct00001
Figure pct00001

[기재] [materials]

K-1: 이축연신 폴리프로필렌(왕자 에프텍스사제 FC-201, 두께: 30μm); 120℃의 열수축률 2.0%. K-1: biaxially stretched polypropylene (FC-201 made by Prince Efex, thickness: 30 m); Heat shrinkage at 120 캜 2.0%.

K-2: 이축연신 폴리프로필렌(왕자 에프텍스사제 E-201F, 두께: 40μm); 120℃의 열수축률 1.5%. K-2: biaxially stretched polypropylene (E-201F manufactured by Prince Efton, thickness: 40 m); Heat shrinkage at 120 캜 1.5%.

K-3: 이축연신 폴리프로필렌(도요보사제 파일렌 필름-OT P2111, 두께: 30μm); 120℃의 열수축률 3.3%. K-3: biaxially stretched polypropylene (PYRENE film manufactured by Toyobo Co., Ltd., OT P2111, thickness: 30 m); Heat shrinkage of 120% at 3.3%.

K-4: 이축연신 폴리프로필렌(합성품, 두께: 30μm); 120℃의 열수축률 1.1%. K-4: biaxially oriented polypropylene (synthetic, thickness: 30 m); Heat shrinkage at 120 캜 1.1%.

K-5: 이축연신 폴리프로필렌(합성품, 두께: 30μm); 120℃의 열수축률 4.8%. K-5: biaxially oriented polypropylene (synthetic, thickness: 30 m); Heat shrinkage at 120 ° C of 4.8%.

[광경화형 점착제] [Photocurable adhesive]

〔(메트)아크릴산 에스테르 공중합체〕 [(Meth) acrylic acid ester copolymer]

A-1: 일본제온(日本ZEON)사제 아크릴 고무 AR53L; 에틸 아크릴레이트 54%, 부틸 아크릴레이트 19%, 메톡시에틸 아크릴레이트 24%의 공중합체, 유화 중합에 의해 얻어진다. A-1: acrylic rubber AR53L manufactured by Japan ZEON Co., Ltd.; A copolymer of ethyl acrylate 54%, butyl acrylate 19%, methoxyethyl acrylate 24%, and emulsion polymerization.

A-2: 소켄화학(綜硏化學)사제 SK다인1496; 2-에틸헥실 아크릴레이트 96%, 2-하이드록시에틸 아크릴레이트 4%의 공중합체, 용액중합에 의해 얻어진다. A-2: SK Dain 1496 manufactured by Sohn Chemical Co., Ltd.; A copolymer of 2-ethylhexyl acrylate 96% and 2-hydroxyethyl acrylate 4%, solution polymerization.

〔광중합성 화합물〕 [Photopolymerizable compound]

B-1: 네가미공업(根上工業)사제 UN-905; 이소포론 디이소시아네이트의 삼합체에 디펜타에리스리톨 펜타아크릴레이트를 주성분으로 하는 아크릴레이트를 반응시킨 것이며, 비닐기의 수가 15개. B-1: UN-905 manufactured by Negami Industry Co., Ltd.; Isophorone diisocyanate is reacted with acrylate containing dipentaerythritol pentaacrylate as a main component, and the number of vinyl groups is 15.

B-2: 신나카무라(新中村) 화학사제 A-TMPT; 트리메틸올프로판 트리메트아크릴레이트, 비닐기의 수가 3개. B-2: A-TMPT manufactured by Shin Nakamura Chemical Co., Ltd.; Trimethylolpropane trimethacrylate, 3 vinyl groups.

〔다관능 이소시아네이트 경화제〕 [Multifunctional isocyanate curing agent]

C-1: 일본폴리우레탄사제 코로네이트(Coronate) L-45E; 2,4-톨릴렌 디이소시아네이트의 트리메틸올프로판 어덕트체. C-1: Coronate L-45E made by Nippon Polyurethane Industry Co., Ltd.; Trimethylolpropane duct body of 2,4-tolylene diisocyanate.

C-2: 트리메틸렌 디이소시아네이트 C-2: Trimethylene diisocyanate

〔광중합개시제〕 [Photopolymerization initiator]

D-1: BASF재팬사제 IRGACURE127; 2-히드록시-1-{4-[4-(2-히드록시-2-메틸-프로피오닐)-벤질]-페닐}-2-메틸-프로판-1-온, 질량감소율이 10%일 때의 온도 275℃. D-1: IRGACURE127 manufactured by BASF Japan; 2-methyl-propan-1-one, when the mass reduction rate is 10%. Lt; / RTI &gt;

D-2: BASF재팬사제 IRGACURE OXE02; 에탄온, 1-[9-에틸-6-(2-메틸 벤조일)-9H-카르바졸-3-일]-, 1-(O-아세틸　옥심), 질량감소율이 10%일 때의　온도 320℃. D-2: IRGACURE OXE02 manufactured by BASF Japan; Ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -, 1- (O-acetyloxime), temperature at a mass reduction rate of 10% .

D-3: BASF재팬사제 LUCIRIN TPO; 2,4,6-트리메틸 벤조일-디페닐-포스핀 옥사이드, 질량감소율이 10%일 때의 온도 270℃. D-3: LUCIRIN TPO manufactured by BASF Japan; 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, temperature at a mass reduction rate of 10% at 270 ° C.

D-4: BASF재팬사제 IRGACURE651; 벤질다이메틸케탈, 질량감소율이 10%일 때의 온도 185℃. D-4: IRGACURE 651 manufactured by BASF Japan; Benzyl dimethyl ketal, 185 ° C when the mass reduction rate is 10%.

〔실리콘계 그라프트 공중합체〕 [Silicone Graft Copolymer]

E-1: 소켄화학(綜硏化學)사제 UTMM-LS2; 실리콘 분자쇄의 말단에 (메트)아크릴로일기를 가지는 실리콘계 올리고머 단위, 및 메틸 메트아크릴레이트 등으로 이루어지는 아크릴 비닐 단위를 중합하여 이루어지는 실리콘계 그라프트 공중합체. E-1: UTMM-LS2 manufactured by Sohn Chemical Co., Ltd.; A silicone-based graft copolymer obtained by polymerizing a silicone-based oligomer unit having a (meth) acryloyl group at the end of a silicon molecular chain and an acrylic vinyl unit comprising methylmethacrylate or the like.

〔점착 부여 수지〕 [Adhesion-imparting resin]

F-1: 야스하라 케미컬제 YS폴리스타 S145; 테르펜 페놀계 점착 부여 수지, 연화점 145℃. F-1: YS Polystar S145 manufactured by Yasuhara Chemical Co., Ltd.; Terpene phenolic tackifier resin, softening point 145 캜.

얻어진 점착 시트를 더미의 회로 패턴을 형성한 직경 8인치×두께 0.1mm의 실리콘 웨이퍼와 링 프레임에 첩합했다. 실리콘 웨이퍼를 점착 시트 첩부면과 반대 측의 면이 접하도록 핫 플레이트(hot plate) 위에 설치하고 120℃에서 1시간 가온한 후，다이싱 및 광조사, 픽업의 각 공정을 실시했다. The obtained pressure-sensitive adhesive sheet was bonded to a ring frame with a silicon wafer having a diameter of 8 inches by a thickness of 0.1 mm on which a dummy circuit pattern was formed. The silicon wafer was placed on a hot plate such that the side opposite to the adhesive sheet adherend surface was in contact with the wafer, heated at 120 DEG C for 1 hour, and then diced, irradiated, and picked up.

다이싱 공정의 조건은 아래와 같이 했다. The conditions of the dicing step were as follows.

다이싱 장치: DISCO사제 DAD341 Dicing device: DAD341 manufactured by DISCO

다이싱 블레이드: DISCO사제 NBC-ZH205O-27HEEE Dicing blade: manufactured by DISCO NBC-ZH205O-27HEEE

다이싱 블레이드 형상: 외경 55.56mm, 인폭(刃幅) 35μm, 내경 19.05mm Dicing blade shape: Outer diameter 55.56 mm, Inx (blade width) 35 m, Inner diameter 19.05 mm

다이싱 블레이드 회전수: 40,000rpm Rotation speed of dicing blade: 40,000 rpm

다이싱 블레이드 전송 속도: 50mm/초 Dicing blade Transfer speed: 50mm / sec

다이싱 사이즈: 10mm 각(角) Dicing Size: 10mm Angle

점착 시트로의 절단 깊이: 15μm Cutting depth to adhesive sheet: 15 mu m

절삭수 온도: 25℃ Cutting temperature: 25 ℃

절삭수 양: 1.0리터/분 Cutting water amount: 1.0 liter / min

광조사 공정의 조건은 아래와 같이 했다. The conditions of the light irradiation process were as follows.

자외선조사: 고압수은등으로 조사량 150mJ/cm2 UV irradiation: High pressure mercury lamp with a dose of 150 mJ / cm 2

픽업공정의 조건은 아래와 같이 했다. The conditions of the pickup process were as follows.

다이싱한 웨이퍼 위에, 전사용 점착 시트(실리콘 웨이퍼에 대한 점착력:　6.25N/25mm)를 첩부한 뒤, 전사용 점착 시트를 박리하여 칩을 전사한다. A transfer-use pressure-sensitive adhesive sheet (adhesive force to silicon wafer: 6.25 N / 25 mm) is pasted on the diced wafer, and the transfer-use pressure-sensitive adhesive sheet is peeled off to transfer the chips.

가온공정에서 이하의 평가를 실시했다. The following evaluations were carried out in the heating process.

(1) 점착 시트의 변형 (1) Deformation of adhesive sheet

120℃에서 1시간 가온한　후의 점착 시트를 관찰하고 이하의 기준에 의해 평가했다. The pressure-sensitive adhesive sheet after heating at 120 占 폚 for 1 hour was observed and evaluated according to the following criteria.

◎(우수): 가온 후에도 점착 시트에 "휨 "이나 "벗겨짐"이 발생하지 않는다. ⊚ (excellent): "warp" or "peeling" does not occur in the adhesive sheet even after heating.

○(양호): 가온에 의해 점착 시트에 "휨"이나 "벗겨짐"이 조금 발생한다. Good (good): The adhesive sheet is slightly bent or peeled by heating.

×(불가): 가온에 의해 점착 시트에 "휨"이나 "벗겨짐"이 발생한다. X (not applicable): "Heat" causes "bending" or "peeling" on the adhesive sheet.

다이싱 공정 및 픽업공정에서 이하의 평가를 실시했다. The following evaluations were carried out in the dicing step and the pick-up step.

(1) 칩 유지성 (1) Chip retention

칩 유지성은 다이싱 공정 후에 반도체칩이 점착 시트에 유지되어　있는 반도체칩의 잔존율에 따라 이하의 기준에 의해 평가했다. Chip retention was evaluated according to the following criteria according to the residual percentage of the semiconductor chips held by the pressure-sensitive adhesive sheet after the dicing step.

◎(우수): 칩 비산이 5% 미만 ◎ (excellent): chip bean less than 5%

○(양호): 칩 비산이 5% 이상 10% 미만 ○ (Good): Chip scattering is 5% or more and less than 10%

×(불가): 칩 비산이 10% 이상 × (Not applicable): Chip bean more than 10%

(2) 픽업성 (2) Pickup property

픽업성은 픽업공정에서, 전사용 점착 시트를 이용하여 반도체칩을 전사시켜 전사 성공률(픽업 성공률)에 따라 이하의 기준에 의해 평가했다. The pick-up property was evaluated by the following criteria according to the transfer success rate (pickup success rate) by transferring the semiconductor chip using the transferable pressure sensitive adhesive sheet in the pickup process.

◎(우수): 칩의 픽업 성공률이 95% 이상 ◎ (excellent): Chip pickup success rate is over 95%

○(양호): 칩의 픽업 성공률이 80% 이상 95% 미만 ○ (Good): Chip pickup success rate is over 80% and less than 95%

×(불가): 칩의 픽업 성공률이 80% 미만 × (not applicable): Chip pickup success rate less than 80%

평가 결과를 「표 1」에 나타낸다. 실시예 1에 따른 점착 시트에서는 가온 공정　후의 점착 시트의 변형은 없고 또한, 칩 유지성 및 픽업성이 모두 우수로 평가되었다. The evaluation results are shown in &quot; Table 1 &quot;. In the pressure-sensitive adhesive sheet according to Example 1, there was no deformation of the pressure-sensitive adhesive sheet after the heating process, and both the chip retention property and the pick-up property were evaluated to be excellent.

<실시예 2~25> &Lt; Examples 2 to 25 >

기재의 재료, (메트)아크릴산 에스테르 공중합체 및 광중합성 화합물, 다관능 이소시아네이트 경화제, 광중합개시제, 실리콘계 그라프트 공중합체의 종류 혹은 첨가 유무를 「표 1」에 나타낸 바와 같이 변경한 이외는 실시예 1과 동일하게 하여 점착 시트를 제조하고 평가를 했다. 결과를 표에 나타낸다. Except that the kind of the (meth) acrylic acid ester copolymer and the photopolymerizable compound, the polyfunctional isocyanate curing agent, the photopolymerization initiator, and the silicone-based graft copolymer were changed as shown in Table 1, , A pressure-sensitive adhesive sheet was produced and evaluated. The results are shown in the table.

<비교예 1~3, 5~10> &Lt; Comparative Examples 1 to 3 and 5 to 10 >

기재로서, 이하의 기재를 이용한 이외는 실시예 1과 동일하게 하여 점착 시트를 제조하고 평가를 했다. 결과를 표 2에 나타낸다. A pressure-sensitive adhesive sheet was prepared and evaluated in the same manner as in Example 1 except that the following materials were used. The results are shown in Table 2.

K-6: 폴리에틸렌테레프탈레이트(유니치카(ＵＮＩＴＩＫＡ)사제　엠블렛 PET, 두께:　25μm);　120℃의 열 수축률 0.5% K-6: polyethylene terephthalate (emblem PET made by UNITIKA, thickness: 25 m); Heat shrinkage at 120 캜 0.5%

K-7:　환상 올레핀 코폴리머(군제(ＧＵＮＺＥ)사제 F필름, 두께: 100μm); 120℃의 열 수축률 0.1% K-7: cyclic olefin copolymer (F film, manufactured by Gunze), thickness: 100 m); Heat shrinkage at 120 占 폚 0.1%

K-8:　이축연신 폴리프로필렌(합성품, 두께: 30μm);　120℃의 열수축률 6.0% K-8: biaxially stretched polypropylene (synthetic, thickness: 30 m); A heat shrinkage rate of 120 占 폚 of 6.0%

<비교예 4> &Lt; Comparative Example 4 &

실리콘계 그라프트 공중합체를 첨가하지 않고 점착 부여 수지를 첨가한 이외는 실시예 1과 동일하게 하여 점착 시트를 제조하고 평가를 했다. 결과를 표에 나타낸다. A pressure-sensitive adhesive sheet was prepared and evaluated in the same manner as in Example 1, except that a tackifying resin was added without adding a silicone-based graft copolymer. The results are shown in the table.

Figure pct00002
Figure pct00002

실시예 2~25에 따른 점착 시트에서는, 가온공정 후의 점착 시트의 변형이 거의 또는 전혀 없고 양호한 칩 유지성 및 픽업성이 확인되었다. 한편, 비교예 1, 2의 점착 시트에서는, 가온 후에 점착 시트가 변형해버렸다. 또한, 비교예 3의 점착 시트에서는, 가열 후에 테이프가 일부 벗겨져 버렸다. 비교예 4~7 및 9~10의 점착 시트에서는, 픽업성이 불량으로 되고 점착물 잔류도 현저했다. 비교예 8의 점착 시트에서는 칩 유지성이 나빴다. In the pressure-sensitive adhesive sheets according to Examples 2 to 25, there was little or no deformation of the pressure-sensitive adhesive sheet after the heating process, and good chip retention and pick-up properties were confirmed. On the other hand, in the pressure-sensitive adhesive sheets of Comparative Examples 1 and 2, the pressure-sensitive adhesive sheet was deformed after heating. Further, in the pressure-sensitive adhesive sheet of Comparative Example 3, the tape partially peeled off after heating. In the pressure-sensitive adhesive sheets of Comparative Examples 4 to 7 and 9 to 10, the pick-up property was poor and the sticky product remained remarkable. In the pressure-sensitive adhesive sheet of Comparative Example 8, the chip retainability was poor.

본 발명에 따른 점착 시트는 가온되었을 경우에도 점착 시트가 변형되지 않고, 또한, 반도체 웨이퍼에 과도하게 밀착되지 않기 때문에, 자외선 등의 조사에 의해 점착제층의 접착력을 충분히 저하시킬 수 있어 양호한 픽업성이 얻어졌다. 따라서, 본 발명에 따른 점착 시트는 반도체장치의 제조공정에서 반도체칩을 가온하면서 성능 검사할 때에 이용할 수 있기 때문에 고온상태에서의 칩의 이상(異常)을 패키징 공정 전에 알 수 있어, 패키징 코스트의 삭감으로 이어진다． The pressure-sensitive adhesive sheet according to the present invention does not deform the pressure-sensitive adhesive sheet even when it is heated and does not excessively adhere to the semiconductor wafer. Therefore, the adhesive force of the pressure-sensitive adhesive layer can be sufficiently lowered by irradiation with ultraviolet rays or the like, . Therefore, since the adhesive sheet according to the present invention can be used for performance testing while heating a semiconductor chip in a manufacturing process of a semiconductor device, it is possible to know an abnormality of a chip in a high temperature state before a packaging process, .

Claims (9)

반도체칩을 가열하면서 성능 검사하는 공정에서 사용되는 점착 시트로서, 이 점착 시트는 기재 위에 점착제층이 설치된 점착 시트이며, 이 기재가 120℃에서 15분 가열했을 때의 열수축률이 1.0%~5.0%이며, 이　점착제층이
(메트)아크릴산 에스테르 공중합체 100질량부와，
광중합성 화합물 5~200질량부와，
다관능 이소시아네이트 경화제 0.5~20질량부와，
광중합개시제 0.1~20질량부와，
점착 부여 수지 0~2질량부를 포함하는 것을 특징으로 하는, 반도체 검사용의 내열성 점착 시트. A pressure-sensitive adhesive sheet used in a process of heating and testing a semiconductor chip, wherein the pressure-sensitive adhesive sheet is a pressure-sensitive adhesive sheet provided with a pressure-sensitive adhesive layer on a substrate, wherein the heat shrinkage rate of the substrate when heated at 120 DEG C for 15 minutes is 1.0% , And the pressure-sensitive adhesive layer
100 parts by mass of a (meth) acrylic acid ester copolymer,
5 to 200 parts by mass of a photopolymerizable compound,
0.5 to 20 parts by mass of a polyfunctional isocyanate curing agent,
0.1 to 20 parts by mass of a photopolymerization initiator,
And 0 to 2 parts by mass of a tackifier resin. 제1항에 있어서，
상기 기재가 이축연신된 필름인 것을 특징으로 하는，반도체 검사용의 내열성 점착 시트. The method according to claim 1,
Resistant adhesive sheet for semiconductor inspection, wherein the substrate is a biaxially stretched film. 제1항 또는 제2항에 있어서，
상기 점착 시트의 점착제층이 박리부여제를 포함하는, 반도체 검사용의 내열성 점착 시트. 3. The method according to claim 1 or 2,
Sensitive adhesive sheet for inspection of a semiconductor, wherein the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet comprises a release-imparting agent. 제3항에 있어서，
상기 박리부여제는 실리콘계 그라프트 공중합체로 이루어지는, 반도체 검사용의 내열성 점착 시트. The method of claim 3,
Wherein the peel-off agent is a silicone-based graft copolymer. 제3항 또는 제4항에 있어서，
상기 박리부여제의 첨가량은 (메트)아크릴산 에스테르 공중합체 100질량부에 대하여 0.1~20질량부인, 반도체 검사용의 내열성 점착 시트. The method according to claim 3 or 4,
Sensitive adhesive sheet for semiconductor inspection, wherein the amount of the release agent added is from 0.1 to 20 parts by mass based on 100 parts by mass of the (meth) acrylic acid ester copolymer. 제1항 내지 제5항의 어느 한 항에 있어서，
상기 다관능 이소시아네이트 경화제가 이소시아네이트기를 3개 이상 가지는，반도체 검사용의 내열성 점착 시트. 6. The method according to any one of claims 1 to 5,
Wherein the polyfunctional isocyanate curing agent has three or more isocyanate groups. 제1항 내지 제6항의 어느 한 항에 있어서，
상기 광중합개시제가 23℃에서부터 10℃/분의 승온 속도로 승온했을 때의 질량감소율 10%로 되는 온도가 250℃ 이상인, 반도체 검사용의 내열성 점착 시트. 7. The method according to any one of claims 1 to 6,
Resistant adhesive sheet for semiconductor inspection, wherein the temperature at which the photopolymerization initiator has a mass reduction rate of 10% when it is heated at a temperature raising rate from 23 占 폚 to 10 占 폚 / min is 250 占 폚 or more. 반도체칩이 점착 시트에 첩부된 상태에서, 100~150℃의 스테이지 위에 상기 점착 시트가 상기 스테이지에 접하도록 얹어놓고 흡착 고정하는 흡착공정과,
상기 스테이지를 100~150℃로 가열하면서 상기 반도체칩의 성능을 검사하는 검사공정과,
상기 점착 시트에 활성광선을 조사하는 활성광선 조사공정과,
상기 점착 시트로부터 상기 반도체칩을 픽업하는 픽업공정을 포함하고,
상기 점착 시트는 제1항 내지 제7항의 어느 한 항에 기재된 점착 시트인, 반도체 검사 방법. An adsorption step of placing the pressure sensitive adhesive sheet on a stage of 100 to 150 DEG C in a state where the semiconductor chip is attached to the pressure sensitive adhesive sheet so that the pressure sensitive adhesive sheet is in contact with the stage,
An inspection step of inspecting the performance of the semiconductor chip while heating the stage to 100 to 150 ° C;
An active ray irradiation step of irradiating the adhesive sheet with an actinic ray;
And a pickup step of picking up the semiconductor chips from the adhesive sheet,
Wherein the adhesive sheet is the adhesive sheet according to any one of claims 1 to 7. 제8항에 있어서，
상기 흡착공정 전에, 점착 시트를 반도체 웨이퍼에 첩부하는 첩부공정과,
상기 반도체 웨이퍼를 다이싱하여 상기 반도체칩으로 하는 다이싱공정을 더 구비하는，반도체 검사 방법.

9. The method of claim 8,
A bonding step of affixing the adhesive sheet to the semiconductor wafer before the adsorption step;
Further comprising a dicing step of dicing the semiconductor wafer into the semiconductor chip.

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