KR20170006456A - Silicon single crystal ingot and method for growing the same - Google Patents

Silicon single crystal ingot and method for growing the same Download PDF

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KR20170006456A
KR20170006456A KR1020150097088A KR20150097088A KR20170006456A KR 20170006456 A KR20170006456 A KR 20170006456A KR 1020150097088 A KR1020150097088 A KR 1020150097088A KR 20150097088 A KR20150097088 A KR 20150097088A KR 20170006456 A KR20170006456 A KR 20170006456A
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crucible
rotation
seed
silicon melt
silicon
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KR101751789B1 (en
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최영규
김세훈
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주식회사 엘지실트론
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to a method for growing a silicon single crystal ingot, and more particularly, to a method for growing a silicon single crystal ingot to reduce an oxygen concentration deviation in the longitudinal direction of the ingot. The method according to an embodiment of the present invention comprises: a step of preparing a silicon molten liquid in a crucible; a step of dipping a seed in the silicon molten liquid; a step of rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and a step of raising the ingot growing from the silicon molten liquid. In the method, the weight of the silicon molten liquid is measured so that the crucible and the seed are differently rotated depending on the weight of the silicon molten liquid.

Description

TECHNICAL FIELD [0001] The present invention relates to a silicon single crystal ingot and a method of growing the same. BACKGROUND ART [0002]

The present invention relates to a method of growing a silicon single crystal ingot, and more particularly, to a method of growing a silicon single crystal ingot having a small oxygen concentration deviation in the axial direction of the ingot.

The silicon wafer includes a single crystal growth step for forming a single crystal ingot, a slicing step for obtaining a thin disk-shaped wafer by slicing the single crystal ingot, and a step for preventing cracks and distortion of the wafer obtained by the slicing step A polishing step of polishing the outer periphery of the wafer, a lapping process of removing damages due to mechanical processing remaining on the wafer, a polishing process of mirror-polishing the wafer, And a cleaning step of polishing the wafer and removing abrasive and foreign substances adhering to the wafer.

The silicon single crystal ingot is moved in the direction opposite to the rotation direction of the crucible about the same axis as the rotation axis of the crucible while the shaft supporting the crucible is rotated to raise the crucible so that the solid- And then pulled up.

The silicon single crystal ingot grown in this manner is used as a substrate of a semiconductor device through the above-described processes.

 In the silicon single crystal ingot growing process, oxygen is dissolved in the silicon melt at the inner surface of the quartz crucible in contact with the silicon melt and the quartz crucible, so that oxygen of about 98% or more evaporates from the surface of the silicon melt to the SiO 2 gas, and the silicon single crystal ingot and silicon melt Is introduced into the silicon single crystal ingot growing by the segregation phenomenon.

Oxygen present in the bulk of a silicon wafer acts as an intrinsic gettering site that removes metal impurities that can be generated by subsequent semiconductor device fabrication processes and is therefore known to be essential to the operation of semiconductor devices.

On the other hand, oxygen causes defects such as precipitates, dislocations, and stacking defects during the heat treatment process of the semiconductor device manufacturing process, thereby deteriorating the electrical characteristics of the semiconductor device.

Ultimately, therefore, the oxygen content in silicon crystals is a very important factor in terms of quality control and must be carefully controlled according to the requirements of the application of silicon wafers.

In order to control the oxygen concentration in the silicon single crystal ingot, Japanese Patent No. 3760816 discloses that the center of the magnetic field applied to the crucible is placed on the surface or inside of the silicon melt and the rotational speed of the crucible or seed and the pulling rate of the ingot are controlled, Respectively.

However, when the center of the magnetic field is determined based on the surface of the silicon melt, the crucible is deformed by heat, and the surface of the silicon melt is highly likely to change. In addition, even if the design value of the crucible changes, the position of the center of the magnetic field must be arranged differently.

The embodiment attempts to reduce the deviation of the oxygen concentration in the longitudinal direction of the silicon single crystal ingot.

The present invention relates to a method of manufacturing a silicon single crystal ingot, comprising the steps of: preparing a silicon melt in a crucible; Probing the seed with the silicon melt; Rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; And growing the ingot grown from the silicon melt by measuring the weight of the silicon melt and changing the rotation of the crucible and the rotation of the seed depending on the weight of the silicon melt, .

The rotation speed of the crucible and the rotation speed of the seed can satisfy the following expression (1).

S rotation / C rotation = 0.068 × (Mass Si) - (0.00655 × G) +18.0, where S is the rotation speed of the seed, C is the rotation and rotational speed of the crucible, Si Mass is the mass of the silicon melt, G Is the intensity of the magnetic field applied to the crucible.

The rotation speed of the crucible and the rotation speed of the seed can satisfy the following expression (2).

And S rotation / C rotation = 0.3 × M- (0.00655 × G) +18.0, where S is a rotation speed of the seed, C is the rotation speed of the crucible, M is silicon melt which remains and the initial weight of the silicon melt And G is the intensity of the magnetic field applied to the crucible.

When the mass of the silicon melt is between 50 kilograms and 300 kilograms, the horizontal magnetic field can be applied at 2500 G or more.

When the mass of the silicon melt is between 140 kilograms and 300 kilograms, the horizontal magnetic field can be applied at 3300 G or more.

Another embodiment provides a silicon monocrystalline ingot grown by the above-described method and having a variation in oxygen concentration in the axial direction of 占 0.3 ppma or less.

The method of growing a silicon single crystal ingot according to the embodiment and the ingot thus produced can improve the electrical characteristics of a semiconductor device to be manufactured since the oxygen concentration deviation in the axial direction is 0.3 ppma or less.

FIG. 1 is a view showing a single crystal ingot growing apparatus according to an embodiment,
Fig. 2 shows a silicon single crystal ingot that has been grown,
3 shows the dispersion of the oxygen concentration in the axial direction of the conventional silicon single crystal ingot,
Fig. 4A is a diagram showing the seed rotation and the crucible rotation during growth of the silicon single crystal ingot showing the oxygen concentration scattering in the axial direction as in Fig. 3. Fig.
4B is a diagram showing the seed rotation in the second half of the growth of the body of the silicon single crystal ingot,
5A and 5B are views showing flows in the silicon melt when the weight of the silicon melt is 90 kilograms, the magnetic field strength is respectively 3300 G (gauss) and 2400 G,
6 is a view showing a case where the scattering of the oxygen concentration is 0.5 ppm or less when the seed rotational speed is 3 to 10 rpm and the crucible rotational speed is 0.15 to 1.0 rpm and the magnetic field intensity is 2500 to 3300 G,
Fig. 7 is a graph showing the weight of the initial silicon melt in the vertical axis in Fig. 6,
8 is a diagram showing dispersion of the oxygen concentration in the axial direction of the ingot grown by the growth method of the silicon single crystal ingot according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention.

However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under includes both elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements.

Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a view showing a silicon single crystal ingot growing apparatus according to an embodiment.

The silicon single crystal growth apparatus 100 according to the present embodiment can dissolve solid silicon to make a liquid, and then recrystallize the silicon to form a silicon single crystal.

The silicon single crystal ingot growing apparatus 100 includes a chamber 10 in which a space for growing a silicon single crystal ingot 14 from a silicon (Si) melt is formed, a crucible 20 for accommodating the silicon single crystal melt A heating section 40 for heating the crucibles 20 and 22 and a heating section 40 for cutting off the heat of the heating section 40 toward the silicon single crystal ingot 14, A seed chuck 18 for fixing a seed (not shown) for growing the silicon single crystal ingot 14 and a crucible 22 rotated by the driving means And a rotary shaft (30) for rotating and raising the rotary shaft (30).

The chamber 10 may be in the form of a cylinder having a cavity formed therein and the crucibles 20 and 22 are located in a central region of the chamber 10. The crucibles 20 and 22 may be made of a material such as tungsten (W) or molybdenum (Mo), but the present invention is not limited thereto. The crucible may comprise a quartz crucible 20 in direct contact with the silicon single crystal melt and a graphite crucible 22 surrounding the quartz crucible 20 and supporting the quartz crucible 20. [

Hereinafter, one embodiment of a growth method of growing silicon single crystal using the silicon single crystal growth apparatus described above will be described.

First, the silicon melt (Si) is filled in the crucible 20, and the seed 18 is dipped in contact with the silicon melt Si.

Then, the seed 18 is immersed in the high-temperature silicon melt (Si), and a part of the seed can be melted. At this time, a part of the silicon melt (Si) solidifies, and a neck can be grown while continuously forming a season larger than the seed from the seed.

The process of forming the neck as described above may be referred to as seasoning. In the seasoning process, a part of the silicon melt (Si) may solidify in the seed, and the diameter may increase. At this time, a season may be formed as the seed is lifted.

In this process, the shoulder grows in the radial direction and the vertical direction to increase the diameter of the single crystal and to be immersed in the silicon melt to grow the silicon melt do.

Then, the body portion can be continuously grown from the lower portion of the shoulder portion while the silicon melt 40 is solidified. The interface between the silicon melt (Si) and the silicon single crystal ingot to be grown is also referred to as a growth interface (Crystallization Front).

Fig. 2 shows a silicon single crystal ingot in which growth is completed, and Fig. 3 shows an oxygen concentration dispersion in the axial direction of a conventional silicon single crystal ingot.

In FIG. 2, a silicon single crystal ingot grown from a seed to a tail is shown, and the tail can be a single end of the trunk.

3, the oxygen concentration in the axial direction of the silicon single crystal ingot is shown from the seed direction to the tail direction, and the scattering of the oxygen concentration is 0.05 ppma in the latter half of the growth of the silicon single crystal ingot, particularly in the range of 65% to 95% It is getting out.

The change in the axial dispersion of the oxygen concentration in the growth of the silicon single crystal ingot described above can be attributed to an increase in the amount of oxygen supplied to the ingot in the latter half of the ingot growth.

During the growth of the silicon single crystal ingot, the seed and the crucible rotate respectively, which are referred to as seed rotation and crucible rotation, respectively, and the directions of the seed rotation and the crucible rotation may be different directions.

Fig. 4A is a diagram showing the seed rotation and the crucible rotation during growth of the silicon single crystal ingot showing the oxygen concentration scattering in the axial direction as in Fig. 3. Fig.

4A, there is a silicon melt flow (C / R) due to the crucible rotation on the bottom surface of the silicon melt during the growth of the body of the silicon single crystal ingot. On the upper surface of the silicon melt, (S / R).

At this time, the flow (C / R) of the silicon melt flowing on the crucible wall surface from the bottom of the crucible contains oxygen, and the flow (S / R) of the silicon melt due to the seed rotation at the top of the silicon melt I will meet.

At this time, a part of the above-mentioned oxygen diffuses into the flow (S / R) of the silicon melt due to the seed rotation, moves to the solid-liquid interface, and then flows into the lower portion of the silicon single crystal ingot.

However, in FIG. 4B, the amount of the silicon melt decreases in the second half of the growth of the body of the silicon single crystal ingot, and the silicon melt has a flow (S / R) of the silicon melt caused by the seed rotation.

Therefore, when the flow (S / R) of the silicon melt due to the seed rotation moves on the side surface and the bottom surface of the crucible, the oxygen supplied from the surface of the crucible is directly transferred to the solid- Therefore, the oxygen concentration in the silicon single crystal ingot may increase.

In order to solve the above-mentioned problems, it is necessary to control the intensity of the magnetic field applied to the crucible so that the flow of the silicon melt by the seed rotation and the crucible rotation can be respectively continued in the silicon melt in the growth of the silicon single crystal ingot, The weight of the silicon melt is measured and the rotation of the crucible and the rotation of the seed are varied depending on the weight of the silicon melt.

5A and 5B show the flow in the silicon melt when the weight of the silicon melt is 90 kg and the magnetic field intensity is 3300 G (gauss) and 2400 G, respectively. (C / R) of the silicon melt due to the crucible rotation in the silicon melt and the flow (S / R) of the silicon melt due to the seed rotation on the upper surface of the silicon melt when the magnetic field intensity is reduced to 2400 G ).

However, if the intensity of the magnetic field is too low, the scattering of the growth rate of the silicon single crystal ingot may become too large. When the silicon single crystal ingot having a diameter of 300 mm or more is grown from the silicon melt of 300 kg or more, The defect may increase in the silicon single crystal ingot.

Therefore, the growth rate of the growth rate of the silicon single crystal ingot can be set within ± 0.2 mm / min, and the intensity of the magnetic field can be increased to 2500 G or more.

It is possible to control the scattering of the oxygen concentration in the axial direction of the silicon single crystal ingot when the ratio between the seed revolution number and the crucible revolution number has a specific value according to the mass of the silicon melt and the seed revolution number is set to 3 to 10 rpm, When the number of revolutions was 0.15 to 1.0 rpm and the intensity of the magnetic field was 2500 to 3300 G, it was confirmed that the scattering of the oxygen concentration was 0.5 ppm or less.

6 shows a case where the scattering of the oxygen concentration is 0.5 ppm or less when the seed rotation speed is 3 to 10 rpm and the crucible rotation speed is 0.15 to 1.0 rpm and the magnetic field intensity is 2500 to 3300 G. Fig.

In FIG. 6, region I represents the seed rotation / crucible rotation when the magnetic field is applied at 3300 G and the mass of the silicon melt is 140 to 300 kilograms, Region II is the magnetic field applied at 2500 G and the mass of the silicon melt is 50 - Seed rotation / crucible rotation for 300 kilograms.

6, seed rotation / crucible rotation, silicon melt mass, and magnetic field strength at certain points in Region I and Region II have the values in Table 1.

Seed rotation / crucible rotation Mass of silicon melt (kg) The intensity of the magnetic field (Gauss) 6 142 3300 8 154 3300 9 169 3300 8 180 3300 9 201 3300 16 199 2500 11 158 2500

In the above-described Region I and Region II, the rotation of the crucible and the rotation speed of the seed can satisfy the following expression (1).

Equation 1

S rotation / C rotation = 0.068 × (Mass Si) - (0.00655 × G) +18.0, where S is the rotation speed of the seed, C is the rotation and rotational speed of the crucible, Si Mass is the mass of the silicon melt, G Is the strength of the magnetic field.

FIG. 7 is a graph showing the ratio of the weight of the initial silicon melt to the weight of the remaining silicon melt.

Seed rotation / crucible rotation Weight ratio of silicon melt (%) The intensity of the magnetic field (G) 5.77 32 3300 7.547 35 3300 8.55 38 3300 8.42 41 3300 9.09 46 3300 16 45 2500 11.43 36 2500

For example, when 32% of the silicon melt in the crucible is initially filled with silicon melt, a magnetic field of 3300 G may be applied to the crucible, at which time the seed spin / crucible spin rate may be 5.77.

7, the rotation of the crucible and the rotation speed of the seed can satisfy the following equation (2). &Quot; (2) "

Equation 2

And S rotation / C rotation = 0.3 × M- (0.00655 × G) +18.0, where S is a rotation speed of the seed, C is the rotation speed of the crucible, M is silicon melt which remains and the initial weight of the silicon melt , G is the intensity of the magnetic field applied to the crucible, and G is the unit. 7, M may be from 0% to 100%, and M may be from 2500 Gauss to 4500 Gauss.

8 is a diagram showing dispersion of the oxygen concentration in the axial direction of the ingot grown by the growth method of the silicon single crystal ingot according to the embodiment.

The above-described method of growing a silicon single crystal ingot is a method of growing a crucible by controlling the number of revolutions of the crucible and the number of revolutions of the seed according to the ingot growth so that the rotation of the crucible and the rotation of the silicon melt coexist in the silicon melt, The deviation of the concentration is controlled to be within 0.3 ppma.

The method of growing a silicon single crystal ingot according to the embodiment and the ingot thus produced can improve the electrical characteristics of a semiconductor device to be manufactured since the oxygen concentration deviation in the axial direction is 0.3 ppma or less.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

10: chamber 14: single crystal ingot
18: seed chuck 20, 22: crucible
30: rotating shaft 40: heating part
60: upper heat insulating portion 100: silicon single crystal ingot growth device

Claims (6)

In the method for producing a silicon single crystal ingot,
Preparing a silicon melt in the crucible;
Probing the seed with the silicon melt;
Rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; And
And pulling up the ingot to be grown from the silicon melt,
Wherein the weight of the silicon melt is measured to change the rotation of the crucible and the rotation of the seed depending on the weight of the silicon melt. The method according to claim 1,
Wherein the rotational speed of the crucible and the rotational speed of the seed satisfy the following expression (1).
S rotation / C rotation = 0.068 × (Mass Si) - (0.00655 × G) +18.0, where S is the rotation speed of the seed, C is the rotation and rotational speed of the crucible, Si Mass is the mass of the silicon melt, G Is the intensity of the magnetic field applied to the crucible. The method according to claim 1,
Wherein the rotational speed of the crucible and the rotational speed of the seed satisfy the following formula (2): " (2) "
And S rotation / C rotation = 0.3 × M- (0.00655 × G) +18.0, where S is a rotation speed of the seed, C is the rotation speed of the crucible, M is silicon melt which remains and the initial weight of the silicon melt And G is the intensity of the magnetic field applied to the crucible. The method according to claim 1,
Wherein the horizontal magnetic field is applied at 2500 G or more when the mass of the silicon melt is 50 kilograms to 300 kilograms. The method according to claim 1,
Wherein the horizontal magnetic field is applied at 3300 G or more when the mass of the silicon melt is 140 kilograms to 300 kilograms. 6. A silicon monocrystalline ingot grown by the method according to any one of claims 1 to 5 and having a variation in oxygen concentration in the axial direction of 占 0.3 ppma or less.
KR1020150097088A 2015-07-08 2015-07-08 Silicon single crystal ingot and method for growing the same KR101751789B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102137336B1 (en) * 2019-02-08 2020-07-23 에스케이실트론 주식회사 Apparatus of growing a single crystal ingot and method thereof
CN114855284A (en) * 2022-04-06 2022-08-05 上海新昇半导体科技有限公司 Method for growing monocrystalline silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102137336B1 (en) * 2019-02-08 2020-07-23 에스케이실트론 주식회사 Apparatus of growing a single crystal ingot and method thereof
CN114855284A (en) * 2022-04-06 2022-08-05 上海新昇半导体科技有限公司 Method for growing monocrystalline silicon

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