KR20170005240A - Apparatus and Method for depositing a conductive oxide layer - Google Patents

Abstract

The present invention relates to a device and a method to deposit a conductive oxide layer. The present invention comprises: a first process chamber including a first target receiving a DC or DC pulse voltage from a first power supply part, and a first waveguide delivering a microwave generated by a first microwave generating part connected with a first gas supply part supplying a first process gas; and a second process chamber including a second target receiving the DC or DC pulse voltage from a second power supply part, and a second waveguide delivering a microwave generated by a second microwave generating part connected with a second gas supply part supplying a second process gas. In the first power supply part, a first voltage which does not cause discharge is set to be applied to the first target. In the second power supply part, a second voltage which causes discharge is set to be applied to the second target.

Description

[0001] Apparatus and Method for Depositing a Conductive Oxide Layer [0002]

The present invention relates to an apparatus and a method for depositing a conductive oxide layer, and more particularly, to an apparatus and a method for depositing a conductive oxide layer by a sputtering process.

The conductive oxide layer is widely used in the field of display devices. Since the conductive oxide layer such as ITO is transparent while being conductive, it can be used for various purposes in a display device for displaying an image. For example, the conductive oxide layer may be used as an active layer material of a thin film transistor to be used in a transparent display device, or as an anode material of an organic light emitting display device.

Such a conductive oxide layer is mainly deposited on a substrate by a sputtering process. The sputtering process is a deposition method using a principle in which a target is placed in a chamber in a vacuum state and ions are collided with the target through a plasma discharge, thereby forming a thin film on the substrate.

A method of depositing a conductive oxide layer by such a sputtering process is disclosed in Korean Patent Publication No. 2014-0099340.

However, the conventional method of depositing the conductive oxide layer by the sputtering process has the following limitations.

Since the conductive oxide layer formed by the conventional sputtering process has a large resistance, it is limited to use as an electrode of a display device which requires excellent conductivity characteristics.

In order to reduce the resistance of the obtained conductive oxide layer, a method of heating the substrate during the sputtering process has been devised. However, when the substrate is heated, a conductive oxide layer having a low resistance can be obtained. However, . For example, in the case of an organic light emitting display device widely used as a display device, a conductive oxide layer must be formed in a state where an organic light emitting layer is formed. Since the organic light emitting layer is weak against heat, none. Therefore, the method of heating the substrate in order to lower the resistance of the conductive oxide layer can not be applied to the organic light emitting display device.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a deposition apparatus and a deposition method capable of depositing a conductive oxide layer having a low resistance without heating a substrate.

In order to achieve the above object, the present invention provides a microwave oven comprising a first target to which a DC or DC pulse voltage is applied from a first power supply unit and a first waveguide to transmit a microwave generated in the first microwave generating unit, A first process chamber connected to a first gas supply unit for supplying one process gas; And a second waveguide for transmitting a microwave generated by the second microwave generator and a second target to which a DC or DC pulse voltage is applied from the second power supply, and a second waveguide for transmitting a second gas And a second process chamber connected to the supply unit, wherein the first power supply unit is set so that a first voltage that does not cause discharge is applied to the first target, and the second power supply unit supplies a second voltage Is set to be applied to the second target.

The present invention also provides a plasma processing apparatus comprising: a first process chamber having a first target and a first waveguide, the first process chamber being connected to a first gas supply unit for supplying a first process gas; A second process chamber having a second target and a second waveguide and connected to a second gas supply for supplying a second process gas; A partition wall having a slit for moving a substrate between the first process chamber and the second process chamber; And a gas suction mechanism for preventing a second process gas in the second process chamber from entering the first process chamber.

The present invention also provides a plasma processing method comprising: supplying a first process gas into a first chamber at a room temperature, irradiating the first process gas with a microwave to plasma discharge the first process gas, applying a first voltage to the first target A step of forming a seed layer and a surface treatment of the substrate; And applying a second voltage to the second target in a second chamber at room temperature to plasma discharge the second process gas and then irradiating the plasma with microwaves to conduct A method of depositing a conductive oxide layer comprising depositing an oxide.

According to the instant embodiment of the present invention, the surface treatment process and the seed layer formation process are further performed on the substrate prior to the deposition of the oxide, whereby the resistance of the finally obtained oxide layer is lowered while the process proceeds at room temperature.

Also, according to an embodiment of the present invention, since the oxide thin film is deposited at a lower voltage than a general sputter, the resistance of the oxide layer obtained is lowered.

1 is a schematic view of a deposition apparatus for depositing a conductive oxide layer according to an embodiment of the present invention.
FIG. 2 is a flowchart showing a process of depositing a conductive oxide layer according to an embodiment of the present invention.
3 is a schematic view of a deposition apparatus for depositing a conductive oxide layer according to another embodiment of the present invention.
4A and 4B are views showing various types of gas suction mechanisms of the present invention.
5 is a schematic diagram of an apparatus for depositing a conductive oxide layer according to another embodiment of the present invention.
6 is a graph showing changes in sheet resistance of an ITO thin film according to a process condition change.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

1 is a schematic view of a deposition apparatus for depositing a conductive oxide layer according to an embodiment of the present invention.

1, the apparatus for depositing a conductive oxide layer according to an embodiment of the present invention includes a chamber 10, a target 20, a support 30, a power supply 40, A microwave generator 50, a waveguide 55, and a gas supply unit 60.

The chamber 10 forms a reaction space. Thus, a conductive oxide layer can be deposited on the substrate S by a sputtering process in the chamber 10. [ Particularly, according to an embodiment of the present invention, the microwave generated in the microwave generating unit 50 is incident into the chamber 10 through the waveguide 55, so that the microwave and the plasma are combined, High-density plasma can be generated by causing resonance (ECR: Electron Cyclotron Resonance).

The target (20) is formed in the chamber (10). The target 20 may be formed of a conductive oxide constituting a conductive oxide layer deposited on the substrate S. For example, when the conductive oxide layer to be deposited is made of indium tin oxide (ITO), the target 20 may be made of ITO. The target 20 may function as a cathode for the sputtering process. Since the target 20 according to an embodiment of the present invention is formed of a conductive oxide which is a conductive material, the target 20 itself can be used as a cathode. However, the present invention is not limited thereto, and a cathode may be formed separately from the target 20.

The target 20 may be formed in a cylindrical shape and installed rotatably, but it is not limited thereto. In addition, a magnetic field is formed around the target 20 through the magnet by placing a magnet in the cylindrical target 20, thereby forming a high-density plasma around the target 20.

The substrate S is seated on the support 30. According to an embodiment of the present invention, since the thin film deposition process by sputtering is performed at room temperature (15 to 25 ° C), the support table 30 needs to have a separate heater for heating the substrate S There is no.

The power supply unit 40 may discharge the target 20 by applying a voltage to the target 20 functioning as the cathode. When the target 20 is discharged in this manner, the plasma ions are accelerated and impinge on the surface of the target 20, thereby performing a deposition process by sputtering. The power supply unit 40 may be a power source such as DC, pulse DC, or MF. The power supply 40 may be connected to the target 20 via a power line 41.

The microwave generator 50 generates an electron cyclotron resonance (ECR) in a reaction space in the chamber 10 by generating a microwave. The microwave generated in the microwave generator 50 is irradiated to the reaction space in the chamber 10 through the waveguide 55. The microwave irradiated into the reaction space is coupled with the plasma to cause electron cyclotron resonance , Thereby generating a high-density plasma. The microwave generating unit 50 may be connected to the waveguide 55 through a microwave pipe 51.

The waveguide 55 allows the microwave generated by the microwave generator 50 to be irradiated into the reaction space in the chamber 10. To this end, the waveguide 55 is connected to the microwave generator 50 and is formed inside the chamber 10. The waveguide 55 may be installed to face the reaction space between the target 20 and the substrate S. As shown in the drawing, the waveguide 55 may be disposed on only one side of the target 20, but two waveguides 55 may be disposed on one side and the other side of the target 20, respectively. When two waveguides 55 are arranged, each waveguide 55 may be connected to one microwave generator 50.

The gas supply unit 60 supplies a process gas into the chamber 10. Specifically, the gas supply unit 60 is connected to the gas supply pipe 61 to supply the process gas into the chamber 10 through the gas supply pipe 61. The process gas may be an inert gas such as argon (Ar), but may be a combination of an inert gas such as argon (Ar) and an oxygen gas. When the process gas is a combination of an inert gas and an oxygen gas, the gas supply unit 60 may be a combination of a first gas supply unit for supplying an inert gas and a second gas supply unit for supplying oxygen gas.

Hereinafter, a process of depositing a conductive oxide layer according to an embodiment of the present invention will be described. FIG. 2 is a flowchart showing a process of depositing a conductive oxide layer according to an embodiment of the present invention. The deposition process according to FIG. 2 will be described with reference to the deposition equipment according to the above-described FIG. 1.

First, the substrate is subjected to a surface treatment and a seed layer formation process (10S).

The surface treatment and the seed layer forming step 10S for the substrate are performed by supplying a first process gas into the chamber 10 and applying a DC or DC pulse voltage after plasma discharge of the first process gas . The surface treatment and the seed layer forming step (10S) for such a substrate can be carried out at room temperature (15 to 25 DEG C).

The first process gas may be an inert gas containing no oxygen gas. For example, the first process gas may be argon (Ar) gas. A base pressure is provided in the chamber 10 before the first process gas is supplied into the chamber 10.

The step of plasma-discharging the first process gas may include a step of irradiating the microwave generated in the microwave generator 50 to the first process gas in the chamber 10 through the waveguide 55 . Thus, the plasma of the first process gas can be discharged by irradiating the microwave to the first process gas, so that the power of the microwave to be irradiated is adjusted to such a degree that the plasma of the first process gas can be discharged. For example, when argon (Ar) is used as the first process gas, the argon may be plasma discharged by irradiating a 1 kW macrowave. As described above, according to the present invention, the first process gas is irradiated with a microwave to cause plasma discharge, and plasma discharge of the first process gas is not caused by application of the DC or DC pulse voltage. Therefore, by setting the DC or DC pulse voltage to a voltage equal to or lower than the plasma discharge voltage, the surface treatment for the substrate and the seed layer forming process 10S can be performed at room temperature (15 to 25 ° C).

When the DC or DC pulse voltage is applied in a state that the first process gas is plasma discharged, first, electrons present in the plasma collide with the substrate S to perform the surface treatment process on the substrate. Second, Cations existing in the plasma collide with the target 20, and a part of the conductive oxide constituting the target 20 is deposited on the substrate S, thereby forming the seed layer.

The step of applying the DC or DC pulse voltage may include a step of applying a first voltage to the target 20 in the power supply unit 40.

When a first voltage is applied to the target 20, an electric field is formed between the target 20 and the substrate S so that electrons existing in the plasma collide with the substrate S, The surface treatment can be performed. In addition, when a first voltage is applied to the target 20, an electric field is formed between the target 20 and the substrate S, so that the positive ions existing in the plasma collide with the target 20. Then, a small amount of conductive oxide is bounced out of the target 20 and a seed layer of several Å to several tens of Å in thickness can be formed on the substrate S.

As described above, the surface treatment process and the seed layer formation process for the substrate (S) can be performed together by the process of applying the DC or DC pulse voltage. In particular, the surface treatment process for the substrate (S) The seed layer forming process can be performed at the same time.

The surface treatment and the seed layer forming process 10S for the substrate S are performed before the full-scale sputtering process. As described above, the surface treatment and the seed layer forming process 10S, which are performed during the surface treatment and the seed layer forming process 10S, The voltage is a voltage range that forms an electric field between the target 20 and the substrate S but does not cause a discharge in the target 20. That is, the first voltage is lower than the minimum voltage that can cause the target 20 to discharge. In particular, the first voltage is lower than the second voltage applied during the thin film deposition process 30S described later. For example, when a DC voltage of 50V is applied to the target 20, the surface treatment and the seed layer forming process 10S for the substrate S can be performed without generating a discharge in the target 20 have.

The surface treatment and the seed layer forming process 10S for the substrate may be performed by supplying the first process gas into the chamber 10 at room temperature (15 to 25 ° C) ) May be irradiated to the first process gas in the chamber 10 to plasma discharge the first process gas, and then DC or DC pulse voltage may be applied. However, the present invention is not limited thereto. It is also possible to perform the step of applying the DC or DC pulse voltage before the microwave irradiation step. In this case, in the state where the applied DC or DC pulse voltage is maintained, A microwave irradiation process is performed.

Next, a conductive oxide is deposited on the seed layer (20S).

The step 20S of depositing a conductive oxide on the seed layer includes supplying a second process gas into the chamber 10 and applying a DC or DC pulse voltage to plasma discharge the second process gas . The step 20S of depositing the conductive oxide may be performed at room temperature (15 to 25 DEG C).

The second process gas may be an inert gas that does not include oxygen gas, for example, argon (Ar) gas, but may be a mixed gas of an oxygen gas and an inert gas. The resistance of the finally obtained conductive oxide can be controlled by adjusting the content of the oxygen gas.

The step of applying the DC or DC pulse voltage applies an initial discharge voltage to the target 20 at the power supply unit 40. And then a discharge stabilization voltage lower than the initial discharge voltage is maintained, and then a second voltage lower than the discharge stabilization voltage is applied. When the second voltage is applied to the target 20 through the initial discharge voltage and the discharge stabilization voltage, an electric field is formed between the target 20 and the substrate S, and the second process gas is plasma discharged . Thereby, a sputtering process for depositing the conductive oxide constituting the target 20 on the substrate S is performed by causing the cations present in the plasma to collide with the target 20.

At this time, the second voltage is a voltage capable of causing discharge to the target 20. For example, when a DC voltage of 170 V is applied to the target 20, the conductive oxide is sputtered from the target 20 and a sputtering process is performed.

The microwave generated by the microwave generating unit 50 may be supplied to the waveguide 55 to increase the ion density of the plasma after the voltage is applied to the target 20 in the power supply unit 40 and the plasma is discharged. The plasma in the chamber 10 may be irradiated to the plasma. When the microwave is irradiated to the plasma, the microwave and the plasma are combined to generate the electron cyclotron resonance, so that a high density plasma can be generated.

In particular, when the microwave is irradiated, the second voltage may be lowered to a voltage of 30 to 80% of the discharge stabilization voltage. That is, the second voltage adjusted to a voltage of 30 to 80% of the discharge stabilization voltage may be applied to the target 20 by irradiation of the microwave.

 By applying the DC or DC pulse voltage and irradiating the microwave in this manner, a high-density plasma can be generated, so that the second voltage can be lowered. In particular, it is possible to set the second voltage to a voltage lower than the discharge stabilization voltage that stably discharges. Specifically, by appropriately adjusting the power of the microwave, the second voltage is set to a voltage of 30 to 80% Can be set.

As a result, the step 20S of depositing the conductive oxide on the seed layer is performed by supplying the second process gas into the chamber 10 at a room temperature (15 to 25 ° C), applying a DC or DC pulse voltage, 2 plasma discharge of the process gas, and irradiating the plasma with microwaves.

At this time, the power of the microwave can be set in the same manner as in the surface treatment for the substrate and the seed layer forming step 10S. That is, the power of the microwave irradiated to increase the ion density of the plasma can be adjusted to such an extent that the plasma of the second process gas can be discharged, for example, 1 Kw.

As described above, the present invention has an advantage of depositing a conductive oxide layer having a low sheet resistance at a low temperature and a discharge stabilization voltage lower than room temperature through a two-step process including a surface treatment, a seed layer formation process and a deposition process .

The above-described deposition method of the conductive oxide layer can be performed by using the deposition apparatus according to the above-described FIG. 1. In this case, by using one identical chamber 10 and the same target 20 disposed therein, A surface treatment and a seed layer formation step 10S, and a conductive oxide deposition step 20S.

However, the method of depositing the conductive oxide layer may be performed by using the deposition equipment according to FIGS. 3 and 4 described later. In this case, the surface treatment and the seed layer formation process 10S , And then perform the conductive oxide deposition process 20S in the second process chamber 300. [

3 is a schematic view of a deposition apparatus for depositing a conductive oxide layer according to another embodiment of the present invention.

3, the apparatus for depositing a conductive oxide layer according to another embodiment of the present invention includes a loading chamber 100, a first gate valve 150, a first process chamber 200, a second process chamber (not shown) 300, a second gate valve 350, an unloading chamber 400, and a partition 450.

The loading chamber 100 is provided at the forefront of the deposition equipment. The loading chamber 100 may be used to perform a first vacuum process so that the inside of the deposition apparatus can be switched from a standby state to a vacuum atmosphere. Therefore, although not shown, the loading chamber 100 is connected to a vacuum pump.

The substrate S is loaded into the deposition equipment through the loading chamber 100 and the subsequent process proceeds. The substrate S is transferred to the loading chamber 100, the first process chamber 200, the second process chamber 300, and the second process chamber 300 by conveying means such as a conveying roller or a conveyor belt. Unloading chamber 400 in this order.

The first gate valve (150) is located between the loading chamber (100) and the first process chamber (200). When the first gate valve 150 is opened, the substrate S enters the first process chamber 200 from the loading chamber 100.

A first target 220 and a first waveguide 255 are disposed in the first process chamber 200.

The first target 220 is connected to the first power supply 240 through a first power line 241. The first target 220 may be formed of a conductive oxide layer, for example, indium tin oxide (ITO), deposited on the substrate S. The first target 220 may function as a cathode for the sputtering process, and may be formed in a cylindrical shape and rotatably installed. In addition, the magnet may be positioned inside the cylindrical first target 220. The first power supply 240 may be a power source such as DC, pulse DC, or MF.

The first waveguide 255 is connected to the first microwave generator 250 through a first microwave pipe 251. As shown in the drawing, the first waveguide 255 may be disposed on only one side of the first target 220, but two first waveguides 255 are disposed on one side and the other side of the first target 220 . When two of the first waveguides 255 are disposed, each of the first waveguides 255 may be connected to one of the first microwave generating units 250.

The first process chamber 200 is connected to the first gas supply unit 260 through a first gas supply pipe 261. The first gas supply unit 260 may include an inert gas such as argon (Ar).

In the first process chamber 200, the surface treatment and the seed layer forming process 10S for the substrate of FIG. 2 described above are performed.

Accordingly, the first gas supply unit 260 includes an inert gas such as argon (Ar) as a first process gas, and does not include oxygen gas.

The first power supply 240 connected to the first target 220 is configured to apply a DC or DC pulse voltage and the DC or DC pulse applied from the first power supply 240 The voltage is set to a first voltage range that does not cause a discharge in the first target 220 while forming an electric field between the first target 220 and the substrate S. [ As described above, the first voltage is set to a voltage lower than a minimum voltage capable of causing discharge to the first target 220. [

The first microwave generator 250 connected to the first waveguide 255 is configured to apply power to plasma discharge the first process gas.

In the second process chamber 300, second targets 320a and 320b and second waveguides 355a and 355b are disposed.

The second targets 320a and 320b are connected to the second power supply units 340a and 340b through the second power lines 341a and 341b. Although the second targets 320a and 320b, the second power lines 341a and 341b and the second power supplies 340a and 340b are connected in-line by two, respectively, Three or more may be connected in-line, or one each may be formed. Each of the second targets 320a and 320b may be formed of a conductive oxide layer, for example, indium tin oxide (ITO), deposited on the substrate S. Each of the second targets 320a and 320b may function as a cathode, may be formed in a cylindrical shape and may be rotatably installed, and a magnet may be disposed therein. Each of the second power supply units 340a and 340b may be a power source such as DC, pulse DC, or MF.

Each of the second waveguides 355a and 355b may be connected to the second microwave generating unit 350 through the second microwave piping 351a and 351b. Although two second waveguides 355a and 355b are connected to one second microwave generator 350 in the figure, the second waveguides 355a and 355b are not necessarily limited to the two, May be connected to each second microwave generator 350. Each of the second waveguides 355a and 355b may be disposed on only one side of each of the second targets 320a and 320b as shown in FIG. A total of two pieces may be disposed.

The inside of the second process chamber 300 is connected to the second gas supply unit 360 through a second gas supply pipe 361. The second gas supply unit 360 may include an inert gas such as argon (Ar), an inert gas such as argon (Ar), and an oxygen gas.

In the second process chamber 300, a step 20S of depositing a conductive oxide on the seed layer of FIG. 2 is performed.

Accordingly, the second gas supply unit 360 may include a gas supply unit for supplying an inert gas such as argon (Ar) and a gas supply unit for supplying oxygen gas

The second power supplies 340a and 340b connected to the second targets 320a and 320b are configured to apply a DC or DC pulse voltage and the DC power applied by the second power supplies 340a and 340b Or the DC pulse voltage is set to an initial discharge voltage, a discharge stabilization voltage, and a second voltage range that cause discharge to the second targets 320a and 320b. As described above, the second voltage may be adjusted to a voltage of 30 to 80% of the discharge stabilization voltage after the microwave is applied through the second waveguides 355a and 355b.

The second microwave generating unit 350 connected to the second waveguides 355a and 355b is configured to apply power to plasma discharge the second process gas.

According to an embodiment of the present invention, the surface treatment and the seed layer forming process 10S of the substrate of FIG. 2 described above are performed in the first process chamber 200, A step 20S of depositing a conductive oxide on the seed layer of Fig. 2 described above is performed. A partition 450 is formed between the first process chamber 200 and the second process chamber 300 to separate the first process chamber 200 from the second process chamber 300 . A slit 451 is formed in the partition 450 so that the substrate S can move from the first process chamber 200 to the second process chamber 300 through the slit 451.

Meanwhile, it is necessary to prevent the gas, particularly the oxygen gas, from entering the first process chamber 200 into the second process chamber 300. For this purpose, the interior of the second process chamber 300 may be connected to the vacuum pump 470 through a pump line 471. The vacuum pump 470 sucks gas in the second process chamber 300 to prevent gas in the second process chamber 300 from entering the first process chamber 200 have.

As can be seen from the enlarged view drawn by the arrows, the gas suction mechanism 490 is installed in the partition 450 around the slit 451 so that the gas in the second process chamber 300 flows through the first process It is possible to prevent entry into the chamber 200.

The gas suction mechanism 490 may be formed to protrude from the surface of the partition 450 as shown in an enlarged right view. Alternatively, the gas suction mechanism 490 may be inserted into the partition 450, . At this time, the partition 450 is formed toward the inside of the second process chamber 300 so as to suck gas inside the second process chamber 300.

4A and 4B illustrate various types of gas sucking mechanisms 490 of the present invention in which the slits 450 are formed in the interior of the second process chamber 300, FIG.

4A and 4B, a slit 451 for moving the substrate is formed in the partition 450, and a gas suction mechanism 490 is formed around the slit 451.

The slit 451 is elongated in the lateral direction so that the substrate can horizontally enter.

The gas suction mechanism 490 includes a first gas suction mechanism 490a formed on the upper side of the slit 451 and a second gas suction mechanism 490b formed on the lower side of the slit 451 as shown in FIG. . The first gas suction mechanism 490a and the second gas suction mechanism 490b are formed to be longer in the lateral direction in parallel with the slit 451 and longer than the length of the slit 451, It may be more preferable to prevent the gas inside the second process chamber 300 from entering the first process chamber 200.

The gas suction mechanism 490 includes a first gas suction mechanism 490a formed on the upper side of the slit 451, a second gas suction mechanism 490b formed on the lower side of the slit 451, And a third gas suction mechanism 490a for connecting the first gas suction mechanism 490a and the second gas suction mechanism 490b. The first gas suction mechanism 490a and the second gas suction mechanism 490b are the same as those in FIG. The third gas suction mechanism 490a connects one end of the first gas suction mechanism 490a and one end of the second gas suction mechanism 490b and the other end of the first gas suction mechanism 490a, And connects the other end of the second gas suction mechanism 490b.

As described above, the gas suction mechanism 490 may have a closed structure surrounding the slit 451 as shown in FIG. 4B, and may have an open-type structure formed on the upper side and the lower side of the slit 451, ≪ / RTI >

The second gate valve 350 is located between the unloading chamber 400 and the second process chamber 300. When the second gate valve 350 is opened, the substrate S having undergone the process processing enters the unloading chamber 400 from the second process chamber 300.

The unloading chamber 400 is disposed in the last chamber of the deposition equipment, so that the substrate S, which has undergone the process progress, is unloaded from the unloading chamber 400 and moved to the subsequent process equipment.

5 is a schematic diagram of an apparatus for depositing a conductive oxide layer according to another embodiment of the present invention.

5, the apparatus for depositing a conductive oxide layer according to another embodiment of the present invention includes a loading chamber 100, a first gate valve 150, a first process chamber 200, a second process chamber 200, (300), a second gate valve (350), an unloading chamber (400), and a third gate valve (480).

The deposition apparatus for depositing a conductive oxide layer according to another embodiment of the present invention shown in FIG. 5 differs from the deposition apparatus shown in FIG. 3 in that the partition wall 450 is removed and a third gate valve 480 is formed. Respectively. Therefore, the same reference numerals are assigned to the same components as those in FIG. 3 described above, and only the different components will be described below.

Referring to FIG. 5, the third gate valve 480 is formed between the first process chamber 200 and the second process chamber 300. Accordingly, as shown in FIG. 3, the partition 450 is not required for separation between the first process chamber 200 and the second process chamber 300.

Since the third gate valve 480 is formed between the first process chamber 200 and the second process chamber 300, the first process chamber 200 ) And the second process chamber 300 are physically completely distinguished from each other. Therefore, since the gas inside the second process chamber 300 is not likely to enter the first process chamber 200, the pump line 471 and the vacuum pump 470 ) Is not required.

FIG. 6 is a graph showing the sheet resistance of the ITO thin film according to the process condition change. Specifically, FIG. 6 shows the sheet resistance of the ITO thin film deposited under the process conditions shown in Table 1 below. In Table 1, each of the processes was performed at room temperature.

No. Surface treatment process Seed layer formation process Thin Film Deposition Process One Ar gas / MW 1KW / DC 20V DC 20V Ar + oxygen gas / DC170V / MW1kW 2 Ar + Oxygen gas / MW 1KW / DC 20V DC 20V Ar + oxygen gas / DC170V / MW1kW 3 Ar gas / MW 1KW - Ar + oxygen gas / DC170V / MW1kW 4 - - Ar + oxygen gas / DC170V / MW1kW

In the first experimental example (No. 1), the surface treatment process was performed by supplying Ar gas into the first chamber and then irradiating 1 KW of microwaves (MW), then applying DC 20 V, Then, after moving to the second chamber, a mixture gas of Ar and oxygen is supplied into the second chamber, and DC 170V is applied thereto, and the ITO thin film is deposited by irradiating 1 KW of microwaves (MW).

In the second experimental example (No. 2), a mixed gas of Ar and oxygen was supplied into the first chamber, a microwave (MW) of 1 KW was applied, and then a DC 20 V was applied to perform a surface treatment process. And then moved to the second chamber. Then, a mixed gas of Ar and oxygen was supplied into the second chamber, DC 170V was applied, and a 1 KW microwave (MW) was irradiated to deposit the ITO thin film It is.

In the third experimental example (No. 3), the surface treatment process was performed by irradiating a microwave (MW) of 1 KW after supplying Ar gas into the first chamber, and then moved to the second chamber, After supplying a mixed gas of Ar and oxygen, DC 170V was applied and the ITO thin film was deposited by irradiating 1 KW of microwaves (MW).

In the fourth experimental example (No. 4), a mixed gas of Ar and oxygen was supplied into the second chamber without performing the surface treatment step and the seed layer forming step, and then DC 170 V was applied, and a microwave of 1 KW (MW) And the ITO thin film was deposited.

As can be seen from FIG. 6, in the third experimental example (No.3) in which the seed layer formation step was not performed and the fourth experimental example (No.4) in which neither the surface treatment step nor the seed layer formation step was performed, It can be seen that the sheet resistance of the ITO thin film is small in the case of Experimental Examples (No. 1) and No. 2 (No. 1). It can also be seen that the sheet resistance of the ITO thin film is smaller than that of the second experimental example (No. 2) in which the mixed gas of Ar and oxygen is supplied in the first experimental example (No. 1) in which only Ar is supplied during the surface treatment step .

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

10: chamber 20: target
30: Support 40: Power supply
50: microwave generating unit 60: gas supply unit

Claims (23)

And a first waveguide connected to a first target and a first microwave generating unit to which a DC or DC pulse voltage is applied from a first power supply unit and a first waveguide connected to a first gas supply unit for supplying a first process gas, A process chamber; And
A second target to which a DC or DC pulse voltage is applied from the second power supply unit and a second waveguide connected to the second microwave generating unit and a second waveguide connected to the second gas supply unit for supplying the second process gas, Comprising a process chamber,
Wherein the first microwave generator is set to apply a power capable of plasma-discharging the first process gas. The method according to claim 1,
Wherein the first power supply is set to apply a first voltage that does not cause discharge to the first target. 3. The method of claim 2,
Wherein the first process chamber is set to be irradiated with a microwave through the first waveguide and to apply the first voltage to the first target to plasma discharge the first process gas. 3. The method of claim 2,
Wherein the second process chamber is configured to apply a second voltage to the second target to plasma discharge the second process gas and to set a microwave to be applied through the second waveguide to increase the plasma ion density Oxide deposition equipment. 3. The method of claim 2,
Wherein the second process chamber is set to apply a microwave and to apply a second voltage to cause plasma discharge of the second process gas. The method according to claim 4 or 5,
Wherein the second voltage is a voltage adjusted to a voltage of 30 to 80% of a discharge stabilization voltage after the microwave is applied. The method according to claim 6,
Wherein the first gas supply unit is provided to supply the first process gas composed of an inert gas to the first chamber and the second gas supply unit supplies the second process gas composed of a mixed gas of an inert gas and an oxygen gas to the first chamber, 2 chamber. ≪ / RTI > A first process chamber having a first target and a first waveguide and connected to a first gas supply for supplying a first process gas;
A second process chamber having a second target and a second waveguide and connected to a second gas supply for supplying a second process gas;
A partition wall having a slit for moving a substrate between the first process chamber and the second process chamber; And
And a gas suction mechanism for preventing a second process gas in the second process chamber from entering the first process chamber. 9. The method of claim 8,
Wherein the gas suction mechanism is protruded from the surface of the partition wall around the slit or inserted into the partition wall. 10. The method of claim 9,
Wherein the gas suction mechanism is formed inside the second process chamber. 9. The method of claim 8,
Wherein the gas sucking mechanism includes a first gas sucking mechanism and a second gas sucking mechanism which are formed to be longer than the slits while being parallel to the slits on the upper and lower sides of the slit. 12. The method of claim 11,
The gas suction mechanism includes a third gas suction mechanism for connecting one end of the first gas suction mechanism and one end of the second gas suction mechanism and connecting the other end of the first gas suction mechanism and the other end of the second gas suction mechanism Further comprising depositing a conductive oxide layer on the substrate. The method according to claim 6,
Wherein the first process chamber and the second process chamber are set so that a process can be performed at room temperature without a substrate heating mechanism. A first process gas is supplied into the first chamber at room temperature, a microwave is applied to the first process gas to discharge plasma of the first process gas, a first voltage is applied to the first target, A step of forming a seed layer; And
Supplying a second process gas into the second chamber at room temperature, applying a second voltage to the second target to discharge plasma of the second process gas, and irradiating the plasma with microwaves to form a conductive oxide A method for depositing a conductive oxide layer, the method comprising: depositing a conductive oxide layer on a substrate; 15. The method of claim 14,
Wherein the first voltage is a voltage that does not cause a discharge to the first target. 15. The method of claim 14,
Wherein the second voltage is a voltage regulated to 30 to 80% of a discharge stabilization voltage after irradiating the microwave in the second chamber. 15. The method of claim 14,
Applying a microwave to the first process gas to plasma discharge the first process gas, and thereafter applying a first voltage to the first target. 15. The method of claim 14,
Wherein the step of applying the first voltage to the first target is performed before the step of irradiating the microwave to the first process gas and the microwave is irradiated to the first process gas while the first voltage is maintained A method of depositing a conductive oxide layer. 15. The method of claim 14,
Wherein the first process gas comprises an inert gas and the second process gas comprises a mixed gas of an inert gas and an oxygen gas. 15. The method of claim 14,
Wherein the first chamber and the second chamber are the same chamber and the first target and the second target comprise the same target disposed in the same chamber,
Wherein the surface treatment and the step of forming the seed layer, and the step of depositing the conductive oxide are performed in the same chamber. 15. The method of claim 14,
Wherein the first chamber and the second chamber are different chambers and the first target and the second target comprise different targets,
Performing a surface treatment and a seed layer formation in the first chamber, and then depositing the conductive oxide in the second chamber. 22. The method of claim 21,
Further comprising the step of sucking said second process gas to prevent a second process gas in said second chamber from entering said first chamber. 15. The method of claim 14,
Further comprising the step of applying an initial discharge voltage to the second target prior to the step of applying a second voltage to the second target and thereafter maintaining a discharge stabilization voltage lower than the initial discharge voltage,
A step of irradiating a microwave in the second chamber after maintaining the discharge stabilization voltage,
And applying the second voltage adjusted to 30 to 80% of the discharge stabilization voltage after the step of irradiating the microwave in the second chamber.

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