KR20170000019A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20170000019A
KR20170000019A KR1020150088357A KR20150088357A KR20170000019A KR 20170000019 A KR20170000019 A KR 20170000019A KR 1020150088357 A KR1020150088357 A KR 1020150088357A KR 20150088357 A KR20150088357 A KR 20150088357A KR 20170000019 A KR20170000019 A KR 20170000019A
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South Korea
Prior art keywords
electrode
semiconductor layer
semiconductor
dam
light emitting
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KR1020150088357A
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Korean (ko)
Inventor
전수근
김태현
진근모
최일균
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020150088357A priority Critical patent/KR20170000019A/en
Priority to PCT/KR2016/006547 priority patent/WO2016204594A1/en
Publication of KR20170000019A publication Critical patent/KR20170000019A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of an electron and a hole; a first electrode provided on one side of each of the semiconductor layers, and supplying either the electron or the hole to the first semiconductor layer; a second electrode provided on one side of each of the semiconductor layers, and supplying the other one from the electron and the hole to the second semiconductor layer; and a bank formed between the first electrode and the second electrode, and electrically separated from the first electrode and the second electrode. The semiconductor light emitting device has improved reliability for a long-term use.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device having improved reliability when used for a long time.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436. The semiconductor light emitting device includes a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, electrodes 901, 902 and 903 functioning as reflective films formed on the p-type semiconductor layer 500, And an n-side bonding pad 800 formed on the exposed n-type semiconductor layer 300.

A chip having such a structure, that is, a chip in which both the electrodes 901, 902, 903 and the electrode 800 are formed on one side of the substrate 100 and the electrodes 901, 902, 903 function as a reflection film is called a flip chip . Electrodes 901,902 and 903 may be formed of a highly reflective electrode 901 (e.g., Ag), an electrode 903 (e.g., Au) for bonding, and an electrode 902 (not shown) to prevent diffusion between the electrode 901 material and the electrode 903 material. For example, Ni). Such a metal reflection film structure has a high reflectance and an advantage of current diffusion, but has a disadvantage of light absorption by a metal.

The semiconductor light emitting device includes a substrate 100, a buffer layer 200 grown on the substrate 100, a buffer layer 200, a buffer layer 200 formed on the substrate 100, An active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, and a p-type semiconductor layer 500 grown on the n- A p-side bonding pad 700 formed on the transparent conductive film 600, and an n-side bonding pad (not shown) formed on the n-type semiconductor layer 300 exposed by etching 800). A DBR (Distributed Bragg Reflector) 900 and a metal reflection film 904 are provided on the transmissive conductive film 600. According to this structure, although the absorption of light by the metal reflection film 904 is reduced, the current diffusion is less smooth than that using the electrodes 901, 902, and 903.

3, the semiconductor light emitting element is bonded to the conductive pattern 8 of the substrate 6 by solder bumps 16 as shown in FIG. 3A, . Electro-migration or electrochemical migration may occur in the solder bump 16 when a voltage is applied to the electrodes 3 and 5 for a long time. As an example of the electro (chemical) migration phenomenon, a conductive anodic filament phenomenon (see FIG. 3B) and a dendritic growth phenomenon (see FIG. 3C) can be exemplified. In the conductive enodic filament, the metal of the anode is ionized and migrated by the applied electric field, and the filament is formed from the anode to the cathode, resulting in dielectric breakdown. In the dendritic glow, the metal ionized in the anode moves along the electric field toward the cathode, and is reduced on the cathode to form a dendritic filament, and the thus-formed filament grows to the anode, leading to dielectric breakdown.

For example, the solder bump 16 is an alloy of two or more materials. The solder bumps 16 may include Sn, Pb, Ag, Cu, or the like depending on the type of the solder. There is a problem in that these atoms are moved by the electrochemical (cacull) migration and a gap is generated between the two electrodes 3, 5.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, And a plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light by recombination of electrons and holes; A first electrode provided on one side of the plurality of semiconductor layers and supplying one of electrons and holes to the first semiconductor layer; A second electrode provided on one side of the plurality of semiconductor layers and supplying the remaining one of electrons and holes to the second semiconductor layer; And a bank formed between the first electrode and the second electrode, wherein the bank is electrically separated from the first electrode and the second electrode.

According to another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light by recombination of electrons and holes; An insulating reflective film for reflecting light from the active layer; A first electrode provided on an opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying one of electrons and holes to the first semiconductor layer; And a second electrode provided on the opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying the remaining one of electrons and holes to the second semiconductor layer, And a groove extending in a longitudinal direction of the semiconductor light emitting device.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 7,262,436,
2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913,
3 is a view for explaining an example of dielectric breakdown between electrodes by electromigration,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing an example of a cross section cut along the line AA in Fig. 4,
6 is a view for explaining an example in which the dam is blocked from migrating between the first electrode and the second electrode,
7 is a view for explaining the relationship between the area of the electrode and the luminance of the semiconductor light emitting element,
8 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
9 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
10 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
11 and 12 are views for explaining still another example of the semiconductor light emitting device according to the present disclosure,
13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure,
14 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

FIG. 4 is a view showing an example of a semiconductor light emitting device according to the present disclosure, and FIG. 5 is a view showing an example of a cross section cut along the line AA in FIG. 4. In the semiconductor light emitting device according to this example, Layers 30, 40, and 50, a first electrode 80, a second electrode 70, and a bank 98. The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30 having a first conductivity, a second semiconductor layer 50 having a second conductivity different from the first conductivity, And an active layer 40 interposed between the first semiconductor layer 50 and the second semiconductor layer 50 and generating light by recombination of electrons and holes. The first electrode 80 supplies one of electrons and holes to the first semiconductor layer 30 and the second electrode 70 supplies the remaining one of electrons and holes to the second semiconductor layer 50. The dam 98 is formed to be electrically separated from the first electrode 80 and the second electrode 70 between the first electrode 80 and the second electrode 70. 14), the conductive portions 511, 512, or the electrodes 80, 70 when the semiconductor light emitting element is bonded to the conductive portions 511, 512 (see Fig. 13) Electro-migration or electro-chemical migration (hereinafter referred to as " electromigration ") may cause dielectric breakdown or shattering. In the present disclosure, the dam 98 inhibits the occurrence of such electromigration, prevents or prevents the movement of the metal during electromigration to prevent the solder bump 7 or the electrodes 80, 70 from being damaged .

 In the present disclosure, the semiconductor light emitting device is not limited to a flip chip, and a lateral chip or a vertical chip can be applied. Not only the electromigration between the solder bumps 7 but also the electromigration between the solder bumps 7 and the wire bonding occurs.

The semiconductor light emitting device may be a blue semiconductor light emitting chip (for example, 450 nm), a NUV semiconductor light emitting chip, a green semiconductor light emitting chip, or a red semiconductor light emitting chip depending on the composition of the plurality of semiconductor layers 30, 40 and 50. For example, a plurality of semiconductor layers 30, 40, and 50 are formed on a growth substrate 10 using a Group III nitride semiconductor light emitting device. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) A second semiconductor layer 50 (e.g., Mg-doped GaN) having another second conductivity, and a second semiconductor layer 50 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes. An active layer 40 (e.g., InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted.

The grooves 63 may be formed by mesa etching that exposes the first semiconductor layer 30 in the step of dividing the wafer into the plurality of semiconductor light emitting device regions. Thereafter, the transmissive conductive film 60 is formed. The mesa etching process may be performed after the transmissive conductive film 60 is formed.

The light absorption prevention film 41 may be formed between the second semiconductor layer 50 and the light transmissive conductive film 60 in correspondence to the electrical connection 71 or branch electrodes 75 to be described later. The light absorption preventing film 41 may have a function of reflecting a part or all of the light generated in the active layer 40 and may have a function of preventing current from flowing just below the electrical connection 71 or branch electrodes 75 current blocking, or both of them.

Thereafter, a branch electrode 75 and a island-shaped pad 72 are formed on the light-transmissive conductive film 60 in correspondence with the light absorption prevention film 41, and the branched electrode 85 is formed on the exposed first semiconductor layer 30 by mesa etching. Is formed. The branch electrodes 85 and 75 may be omitted depending on the specifications of the semiconductor light emitting device.

Thereafter, the insulating reflective film R is formed on the transmissive conductive film 60. The insulating reflective film R reflects light from the active layer 40. The insulating reflective film R preferably has a plurality of layers, and at least the side of the insulating reflective film R that reflects light is formed of a non-conductive material in order to reduce light absorption by the metal reflective film. Here, the insulating property means that the insulating reflective film R is not used as a means of electrical conduction, and does not necessarily mean that the entire insulating reflective film R must be made of a non-conductive material. The insulating reflective film R may include a distributed Bragg reflector 91a, an Omni-Directional Reflector (ODR), and the like. Alternatively, the first semiconductor layer 30 and the first electrode 80 may be formed on the second semiconductor layer 50, the second electrode 70 may be formed on the metal reflective layer, Can be communicated.

In the example shown in Fig. 5, the insulating reflective film R includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The distribution Bragg reflector 91a is formed on the dielectric film 91b. Distributed Bragg reflector (91a) is, for example, pairs of SiO 2 and TiO 2 are laminated is made a plurality of times. In addition, distributed Bragg reflector (91a) may be formed by a combination, such as Ta 2 O 5, HfO, ZrO , SiN , such as high refractive index material than the low dielectric thin film (typically, SiO 2) refractive index. For example, a distributed Bragg reflector (91a) is a SiO 2 / TiO 2, SiO 2 / Ta 2 O 2, or SiO 2 / HfO can be made by repeated lamination of the pair, with respect to the Blue light is SiO 2 / TiO 2 reflection The efficiency is good, and for UV light, SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have a good reflection efficiency. A clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3. Thus, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as the optical waveguide as the insulating reflective film R and have a total thickness of 1 占 퐉 to 8 占 퐉, Lt; / RTI >

An opening is formed in the insulating reflection film R, and electrical connections 81 and 71 and electrodes 80 and 70 are formed. The first electrical connection 81 penetrates the insulating reflection film R and is electrically connected to the first semiconductor layer 30 through the grooves 63 formed in the plurality of semiconductor layers 30, The second electrical connection 71 is electrically connected to the second semiconductor layer 50 through the insulating reflection film R. A first electrode 80 connected to the first electrical connection 81 and a second electrode 70 connected to the second electrical connection 71 are formed on the insulating reflective film R. [ The electrical connections 81 and 71 and the electrodes 80 and 70 may be formed together. Thereafter, the wafer is separated into individual semiconductor light emitting devices by the cutting process.

In the process of forming the first electrode 80 and the second electrode 70, a dam 98 may be formed together. Accordingly, the dam 98 may be made of the same material as the first electrode 80 and the second electrode 70. When the first electrode 80 and the second electrode 70 are formed of a plurality of layers, the dam 98 may include at least some of the plurality of layers of the electrodes 80 and 70. For example, the first electrode 80 and the second electrode 70 may be formed of a contact layer made of Cr, Ti, Ni, or an alloy thereof for stable electrical contact, and a reflective metal layer such as Al or Ag on the contact layer. Reflective layer. As another example, the electrodes 80 and 70 may be formed of a material selected from the group consisting of a contact layer (e.g., Cr, Ti) / a reflective layer (e.g., Al, Ag, Au / Sn / Cu alloy, Sn, heat-treated Sn, etc.). Of course, the dam 98 may be formed by a separate process from the formation of the electrodes 80, 70, and the material of the dam 98 may be a dielectric (insulator) other than the conductor (see FIG.

The dam 98 extends between an edge of the first electrode 80 facing each other and an edge of the second electrode 70 and is preferably extended as shown in Figure 4 The dam 98 extends along an edge of the first electrode 80 and an edge of the second electrode 70 opposite to each other. The width of the dam 98 is smaller than the width of the first electrode 80 and the width of the second electrode 70 is larger than the width of the first electrode 80. In this embodiment, the width of the dam 98 in the direction from the first electrode 80 to the second electrode 70 is smaller than the width of the first electrode 80, ). As described later in FIG. 7, the present inventors have found that the luminance increases as the area of the metal is smaller on the insulating reflection film R. Thus, it is not necessary to unnecessarily increase the width of the dam 98, and as shown in FIGS. 4 and 5, the dam 98 is formed in the shape of a long strip, and the edges of the electrodes 80, Can be formed longer. When the first electrode 80 and the second electrode 70 are formed in a different form from the dam 98, for example, in the form of an island, a filament or a dielectric by electromigration may be formed. It can not block the progress of the atom (ion). Therefore, it is preferable that it is formed in the form of a dam 98 as in this example.

As shown in FIG. 4, the dam 98 extends approximately at the center between the first electrode 80 and the second electrode 70. The dam 98 may be formed on the plurality of semiconductor layers 30, 40, 50 except for the rim of the mesa-etched semiconductor light emitting device. As another example, the dike 98 may be formed to the edge edge, as indicated by the dotted line 98b in FIG. A protrusion 98c extending from the dam 98 may be added and the protrusion 98c may be used to divide the direction of the first electrode 80 and the second electrode 70, It may affect the electric field between the second electrodes 70. [

When the first electrode 80 and the second electrode 70 are bonded to the conductive parts 511 and 512 of the substrate 500 by a method not dependent on the solder bump 7 (for example, eutectic bonding) The dam 98 may be formed so as not to contact the substrate 500 at a height approximately equal to the electrodes 80 and 70 or lower than the electrodes 80 and 70. [ When the first electrode 80 and the second electrode 70 are bonded to the conductive portions 511 and 512 of the substrate 500 by the solder bumps 7, the dams 98 do not contact the substrate 500 And may be formed higher than the electrodes 80 and 70 in some cases.

6 is a view for explaining an example of suppressing the electromigration between the first electrode and the second electrode in the case where the first electrode 80 and the second electrode 70 are formed by the solder bumps 7 on the substrate 500 To the conductive parts 511 and 512 of FIG. 6A, as shown in FIG. 6A. The solder bump 7 can be used as a ball-shaped bump, which has the advantage that more connection points can be formed in the same area as compared to wire bonding. When a voltage is applied to the electrodes 80 and 70 for a long time, the electromigration phenomenon may occur in the solder bump 7 due to the electric field E1. The solder bump 7 may be an alloy of two or more materials. The solder bumps 7 may include Sn, Pb, Ag, Cu, or the like depending on the type of the solder. For example, as shown in Fig. 3, when these atoms are electromigrated, the filament 5 is grown on the surface of the insulating reflective film R, or atoms (ions) are moved, as shown in Fig. As a result, an insulation breakdown may occur between the first electrode 80 and the second electrode 70.

In this example, a dam 98 is formed between the first electrode 80 and the second electrode 70, as shown in FIG. 6B. 6 (c), the dam 98 can prevent the growth of the filament 5, the movement of the atoms, or the removal of the filaments 5, as shown in FIG. 6C, although the growth of the filaments 5 or the movement of the atoms may occur by electromigration It can serve as a retarding wall. As a result, the reliability of the semiconductor light emitting element is improved when used for a long time.

7 is a view for explaining the relationship between the area of the electrode and the luminance of the semiconductor light emitting device. The present inventors have found that when the insulating reflective film R including the DBR is used, the size of the electrodes 70 and 80 And the light reflectance by the insulating reflective film R is increased as the area of the electrodes 70 and 80 is decreased. The experimental result shows that the size of the electrodes 70 and 80 in the present disclosure is reduced to a range not previously considered, The width of the dam 98 did not need to be made unnecessarily wide.

The distribution Bragg reflector 91a reflects more toward the vertical direction, and reflects more than 99% of the light. However, the obliquely incident lights L1 and L2 pass through the distribution Bragg reflector 91a and are incident on the upper surface of the clad film 91c or the insulating reflection film R and are not covered with the electrodes 80 and 70 The light Ll incident on the electrodes 80 and 70 is partially absorbed (see FIG. 5).

On the other hand, as shown in FIG. 7, the brightness was tested by changing the gap G and the area ratio between the electrodes 80 and 70. The gap G is changed to 150 μm (FIG. 7A), 300 μm (FIG. 7B), 450 μm (FIG. 7C) and 600 μm Is constant. The distance W between the edges of the semiconductor light emitting elements is 1200 μm, the vertical length c is 600 μm, the width B of the electrodes 80 and 70 is 485, 410, , The length A of the electrodes 80 and 70 is constant at 520 μm. The area ratio of the semiconductor light emitting device to the planar portion and the electrodes 80 and 70 is 0.7, 0.59, 0.48, and 0.38, respectively. When the distance between the electrodes 80 and 70 is 80 mu, the area ratio is 0.75. When the electrodes 80 and 70 had the same area, it was found that there was no significant difference in brightness even when the intervals of the electrodes 80 and 70 were changed.

7A), 108.14 (FIG. 7B), 109.14 (FIG. 7C), and 111.30 (FIG. 7D) when the comparison reference luminance is 100. The graph of FIG. Was confirmed. It can be seen that the increase in luminance is considerably high. If the area ratio of the electrodes 80 and 70 is made smaller than 0.38, the brightness may further increase.

In this example, even if the width of the dike 98 is narrowed, the dike 98 is sufficient, and if the width of the dike 98 is increased, the luminance may be lowered as described above. The width of the dam 98 is smaller than the width of the first electrode 80 and the width of the second electrode 70 in the direction from the first electrode 80 toward the second electrode 70. Therefore, . For example, the width of the dam 98 may be less than or equal to 10 micrometers, which may be as much as the width of the surrounding branch electrodes. As shown in FIG. 4, the dike 98 may have a thin band shape. On the other hand, for the purpose of improving the brightness or maintaining the interval in bonding, the weir 98 should preferably be separated by 100 mu m or more from the edge of the first electrode 80 facing each other and the edge of the second electrode 70, respectively.

FIG. 8 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 8B is a view showing an example of a cross section taken along the line B-B in FIG. 8A.

The semiconductor light emitting device includes a branched electrode 75 formed between a plurality of semiconductor layers 30, 40 and 50 and an insulating reflective film R, a branched electrode 85 formed on the first semiconductor layer 30 exposed by mesa etching, . The branch electrode 85 extends under the first electrode 80 and below the second electrode 70. The branch electrode 75 includes a first branch 75a and a second branch 75b. The first branch 75a extends below the first electrode 80 below the second electrode 70 and the second branch 75b protrudes from the first branch 75a to form the first electrode 80, And extends between the second electrodes 70. A plurality of first branches 75a are formed on the translucent conductive film 60 and the second branch 75b extends from each first branch 75a. The insulating reflective film R may have an upwardly raised portion due to the height of the branched electrodes 75. [ Particularly, due to the second branch 75b, as shown in FIG. 8B, an insulating reflective film R is formed between the first electrode 80 and the second electrode 70 so as to form a dam 98, (98) is formed long along the second branch (75b). The dam 98 functions as a wall for preventing the progress of the filament 5 due to electromigration, and can function to delay the progress time. Therefore, the reliability of the semiconductor light emitting device is improved when the semiconductor light emitting device is used for a long period of time.

FIG. 9 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 9B is a view showing an example of a cross section along the CC line in FIG. 9A. Referring to FIG. 9A, And each second branch 75b extending from the first electrode 75a is connected to each other to form a long connection between the first electrode 80 and the second electrode 70. [ 9B, an insulator 44 is interposed between the branch electrode 85 and the second branch 75b. For example, branch electrodes 85 may be formed first, and an insulator 44 may be formed together with the light absorption prevention film 41 described in FIG. Thereafter, the first branch 75a and the second branch 75b may be formed. Due to the second branch 75b, the insulating reflective film R protrudes upwardly between the first electrode 80 and the second electrode 70 to form a dam 98. Due to the dam 98, the electromigration can be prevented or suppressed.

Fig. 10 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure. As shown in Fig. 10A, a dam 98 is formed by a dielectric or an insulator separately from the electrodes 80 and 70, Electromigration can be suppressed by forming it between the first electrode 80 and the second electrode 70. As another example, as shown in FIG. 10B, the dam 98 may include a metal 98b and an insulator 98a. A metal portion 98b of the dam 98 is formed together with the electrodes 80 and 70 and an insulator 98a covering the metal portion 98b is formed. According to the example shown in FIG. 10B, even if the atoms (ions) are moved from both the first electrode 80 and the second electrode 70 and encountered at the dam 98, due to the insulator 98a, .

FIGS. 11 and 12 are views for explaining still another example of the semiconductor light emitting device according to the present disclosure, and FIGS. 12A and 12B show examples of cross sections cut along the line D-D in FIG. Referring to FIGS. 11 and 12A, a trench or groove 67 is formed in the insulating reflective film R between the first electrode 80 and the second electrode 70. For example, after formation of the insulating reflective film R, a trench or groove 67 may be formed when forming the opening for the electrical connection 81, 71. In addition, the reflector 97 may be formed in the trench or the trench so as to maintain the shape of the trench or groove 67 to prevent possible leakage of light.

11 and 12B, the first semiconductor layer 30 is etched to expose the first semiconductor layer 30 between the first electrode 80 and the second electrode 70, and the exposed first semiconductor layer 30 The branch 85b of the branch electrode 85 may be formed. Due to the difference in height due to the mesa etching, grooves or grooves 67 may be formed in the insulating reflective film R as shown in FIG. 12B.

These trenches, grooves 67, or grooves 67 may increase the distance traveled by the electromigration, or interfere with the progress. Therefore, it is possible to prevent or suppress the electromigration due to long-time use.

FIG. 13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, and FIG. 13B shows an example of a cross section along the line E-E in FIG. 13A. A plurality of semiconductor layers 30, 40, and 50 are mesa-etched in a process of electrically isolating a plurality of light emitting cells 101, 102, and 103 (an isolation process). In this separation step, the plurality of semiconductor layers 30, 40, and 50 may be removed so that the substrate 10 is exposed, and there is a height difference therebetween. Accordingly, a trench is formed between the plurality of light emitting cells 101, 102, and 103, and a groove 67 or a groove is formed in the non-conductive reflective film R due to the trench. The first electrode 80 and the second electrode 70 are located on different light emitting cells 101 and 103 and the first electrode 80 and the second electrode 70 are formed with grooves 67 or Grooves can be formed to prevent or suppress shattering due to electromigration.

14 is a view for explaining still another example of the semiconductor light emitting device according to the present invention. The semiconductor light emitting device includes a substrate 500 on which conductive portions 511 and 512 are formed, a conductive portion 511 and conductive portions 512 And a solder bump 7 that joins the first electrode 80 and the second electrode 70, respectively. As shown in FIG. 14A, a dam 98 may be formed of a metal or a dielectric between the first electrode 80 and the second electrode 70, or a second branch 75b may be formed as shown in FIG. 14B The insulating reflective film R can rise so that the dam 98 can be formed. The electromigration in the solder bump 7 is suppressed due to the dam 98, or the electromigration occurs, so that the dam 98 blocks or delays the movement of the atoms, thereby improving the reliability. Here, the dam 98 is formed so as not to contact the substrate 500.

The dam 98 may come into contact with the substrate 500 so that the dam 98 functions to block or prevent electromigration between the conductive part 511 and the conductive part 512 on the substrate 500 . Alternatively, a dam or a wall may be provided on the surface of the substrate 500 between the conductive part 511 and the conductive part 512 of the substrate 500, separately from the dam 98, The electromigration between the conductive portion 511 and the conductive portion 512 is suppressed.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A plurality of semiconductor layers each having an active layer that generates light by recombination of holes; A first electrode provided on one side of the plurality of semiconductor layers and supplying one of electrons and holes to the first semiconductor layer; A second electrode provided on one side of the plurality of semiconductor layers and supplying the remaining one of electrons and holes to the second semiconductor layer; And a bank formed between the first electrode and the second electrode, wherein the bank is electrically separated from the first electrode and the second electrode.

(2) an insulating reflective film for reflecting light from the active layer, wherein the first electrode and the second electrode are located on the opposite sides of the plurality of semiconductor layers with respect to the insulating reflective film.

(3) The semiconductor light emitting device according to any one of (1) to (3), wherein the width of the bank is smaller than the width of the first electrode and smaller than the width of the second electrode.

(4) the dam extends between an edge of the first electrode facing each other and an edge of the second electrode.

(5) The semiconductor light emitting device according to any one of (1) to (5), wherein the dam is made of a conductor, a dielectric, or a combination thereof.

(6) projecting from the dam.

(7) The length of the bank is longer than the an edge of the first electrode facing each other and the an edge of the second electrode, respectively.

(8) An insulating reflection film for reflecting light from the active layer, wherein the first electrode and the second electrode are located on the opposite sides of the plurality of semiconductor layers with respect to the insulating reflection film, A dielectric, or a combination thereof on an insulating reflection layer between an edge of the first electrode and an edge of the second electrode, and a width in a direction from the first electrode toward the second electrode, Is smaller than the width of the first electrode and smaller than the width of the second electrode.

(9) an insulating reflective film formed between the plurality of semiconductor layers and the first and second electrodes, the insulating reflective film reflecting light from the active layer; And a branch electrode formed between the plurality of semiconductor layers and the insulating reflection film, the branch electrode comprising: a first branch extending below the first electrode under the second electrode; a first branch extending from the first branch and extending between the first electrode and the second electrode; Wherein the insulating reflective film rises along the second branch to form a dam.

(10) A substrate on which a first electrode and a second electrode are fixed, the substrate having a first conductive portion to which the first electrode is bonded and a second conductive portion to which the second electrode is bonded, And is not in contact with the semiconductor layer.

(11) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first and second semiconductor layers, A plurality of semiconductor layers having active layers for generating light; An insulating reflective film for reflecting light from the active layer; A first electrode provided on an opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying one of electrons and holes to the first semiconductor layer; And a second electrode provided on the opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying the remaining one of electrons and holes to the second semiconductor layer, Wherein a groove extending in a longitudinal direction of the semiconductor light emitting device is formed.

(12) The semiconductor light emitting device according to any one of claims 1 to 12, wherein the insulating reflective film is etched to form a groove.

(13) A semiconductor light emitting device comprising a plurality of semiconductor layers under a groove, the plurality of semiconductor layers being mesa-etched, and a groove being formed due to a height difference due to the mesa etching.

According to one semiconductor light emitting device according to the present disclosure, reliability is improved when the semiconductor light emitting device is used for a long time.

Further, the junction between the first electrode and the second electrode of the semiconductor light emitting device is prevented by electromigration between the solder bumps.

Also, the light absorption loss is reduced by using an insulating reflective film instead of the metal reflective film.

Further, since the degree of freedom in designing the electrical connection or the branch electrode is high, it is advantageous to uniformly supply the current.

30: first semiconductor layer 40: active layer 50: second semiconductor layer
R: insulating reflection film 98: dam 75, 85: branch electrode
7: solder bump 500: substrate 67: groove, groove

Claims (13)

In the semiconductor light emitting device,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes A plurality of semiconductor layers having active layers formed thereon;
A first electrode provided on one side of the plurality of semiconductor layers and supplying one of electrons and holes to the first semiconductor layer;
A second electrode provided on one side of the plurality of semiconductor layers and supplying the remaining one of electrons and holes to the second semiconductor layer; And
A bank formed between a first electrode and a second electrode, comprising: a dam electrically separated from the first electrode and the second electrode. The method according to claim 1,
And an insulating reflective film for reflecting light from the active layer,
Wherein the first electrode and the second electrode are located on opposite sides of the plurality of semiconductor layers with respect to the insulating reflection film. The method according to claim 1,
In the width in the direction from the first electrode to the second electrode,
Wherein the width of the bank is smaller than the width of the first electrode and smaller than the width of the second electrode. The method according to claim 1,
Wherein the dam extends between an edge of the first electrode facing each other and an edge of the second electrode. The method according to claim 1,
Wherein the dam comprises a conductor, a dielectric, or a combination thereof. The method according to claim 1,
And a protrusion extending from the dam. The method according to claim 1,
Wherein the length of the bank is longer than an edge of the first electrode facing each other and an edge of the second electrode, respectively. The method according to claim 1,
And an insulating reflective film for reflecting light from the active layer,
The first electrode and the second electrode are located on the opposite sides of the plurality of semiconductor layers with respect to the insulating reflection film,
The dam is formed of a conductor, a dielectric, or a combination thereof on an insulating layer between an edge of the first electrode facing each other and an edge of the second electrode,
In the width in the direction from the first electrode to the second electrode,
Wherein the width of the bank is smaller than the width of the first electrode and smaller than the width of the second electrode. The method according to claim 1,
An insulating reflective film formed between the plurality of semiconductor layers and the first and second electrodes and reflecting light from the active layer; And
A branch electrode formed between a plurality of semiconductor layers and an insulating reflective film, comprising: a first branch extending under the first electrode under the second electrode; and a second branch extending from the first branch and extending between the first electrode and the second electrode, And a branch electrode including a branch,
Wherein the insulating reflective film rises along the second branch to form a dam. The method according to claim 1,
A substrate on which the first electrode and the second electrode are fixed, the substrate having a first conductive portion to which the first electrode is bonded and a conductive portion to which the second electrode is bonded,
Wherein the dam is not in contact with the substrate. In the semiconductor light emitting device,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer to generate light by recombination of electrons and holes A plurality of semiconductor layers having active layers formed thereon;
An insulating reflective film for reflecting light from the active layer;
A first electrode provided on an opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying one of electrons and holes to the first semiconductor layer; And
And a second electrode provided on the opposite side of the plurality of semiconductor layers with respect to the insulating reflection film and supplying the remaining one of electrons and holes to the second semiconductor layer,
Wherein the insulating reflective film is formed with a groove extending between the first electrode and the second electrode. The method of claim 11,
Wherein the insulating reflective film is etched to form a groove. The method of claim 12,
Wherein a plurality of semiconductor layers under the groove are mesa-etched and a groove is formed due to a difference in height due to the mesa etching.
KR1020150088357A 2015-06-18 2015-06-22 Semiconductor light emitting device KR20170000019A (en)

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KR1020150088357A KR20170000019A (en) 2015-06-22 2015-06-22 Semiconductor light emitting device
PCT/KR2016/006547 WO2016204594A1 (en) 2015-06-18 2016-06-20 Semiconductor light-emitting element

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