KR20160146560A - Plasma processing apparatus, control method of plasma processing apparatus and storage medium - Google Patents

Abstract

The present invention provides a plasma processing apparatus capable of avoiding damage to a window member without depending on setting of a sensible and empirical process condition. A control device (100) of the plasma processing apparatus (11) receives an input of a recipe for a plasma process to substrate G and determines whether damage to a dielectric included in a window member (22) arranged between processing space S and an inducement coupled antenna (50) is generated when performing a plasma process in accordance with the received recipe based on a difference among predicted reaching temperatures at a plurality of temperature prediction points set in the window member (22) when temperature of the window member (22) is in a balanced state by repeatedly performing the plasma process in accordance with the recipe. When generation of damage to the window member (22) is confirmed, the received recipe is not registered in a memory part (102). Meanwhile, when determining no damage to the window member (22), the recipe is registered in the memory part (102). A plasma process is performed to the substrate G in accordance with the recipe memorized in the memory part (102).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, a plasma processing apparatus, and a control method thereof. 2. Description of the Related Art Plasma processing apparatuses,

The present invention relates to a plasma processing apparatus for performing plasma processing on a substrate, a control method for the plasma processing apparatus, and a storage medium storing a program used for controlling the plasma processing apparatus.

In a panel manufacturing process for a flat panel display (FPD), a substrate such as a glass substrate is subjected to fine processing such as film forming, etching, or ashing using a plasma, using a plasma processing apparatus, A device, an electrode, a wiring, and the like of the pixel are formed. In the plasma processing apparatus, for example, a substrate is mounted on a mounting table having a susceptor as a lower electrode disposed inside a process chamber which can be reduced in pressure, and a high-frequency power is supplied to the susceptor while supplying a process gas to the process chamber. Plasma is generated above the substrate.

As one example of the plasma processing apparatus, there is an inductively coupled plasma processing apparatus. As an example of such a plasma processing apparatus, an upper wall of a chamber opposing a substrate mounting surface of a mounting table disposed inside a chamber is constituted by a window member made of a dielectric, And an antenna (high frequency induction coil) of a spiral shape or the like is provided.

As plasma processing apparatuses become larger in recent years, plasma processing apparatuses become larger, and therefore, window members constituting chamber upper walls are also made large (large-sized). Here, when the temperature of the window member rises due to heat input from the generated plasma, the window member is irradiated with a laser beam from a central portion (directly under the antenna) having a high plasma density to a peripheral portion (outer peripheral portion of the antenna) A temperature distribution in which the temperature is lowered is generated. Such a temperature distribution may cause stress in the window member, and the window member may be damaged by this stress.

As a method of avoiding breakage at the time of temperature rise of the window member, there has been proposed a method of heating the peripheral portion of the window member, a method of cooling the central portion of the window member, and the like (see, for example, Patent Document 1).

(Prior art document)

(Patent Literature)

(Patent Document 1) JP-A-2015-22855

However, in the above-described conventional technique, since it is necessary to add a cooling device or a heating device to the window member, there is a problem that the device configuration becomes complicated and the whole device becomes large. On the contrary, it is considered that the breakage of the window member can be avoided without adding the cooling device or the heating device by setting the processing conditions so that the temperature difference generated in the window member is not excessive. However, there is no clear criterion for the processing conditions capable of avoiding breakage of the window member, and since the processing conditions that can be set also vary depending on the size of the window member, the setting of the processing conditions is performed sensibly or empirically It is a fact that is being done.

An object of the present invention is to provide a plasma processing apparatus capable of avoiding breakage of a window member without depending on the setting of sensory or empirical processing conditions by an operator. It is also an object of the present invention to provide a control method of a plasma processing apparatus for avoiding breakage of a window member and a storage medium storing a program used for executing the control.

In order to achieve the above object, the plasma processing apparatus of the first aspect is a plasma processing apparatus for performing plasma treatment on a substrate accommodated in the chamber by generating inductively coupled plasma in a plasma generation region in the chamber, An inductive coupling antenna for generating the inductive coupling plasma in a plasma generating region; a window member disposed between the plasma generating region and the inductively coupled antenna; and a control unit for controlling plasma processing on the substrate, An execution unit for executing a plasma process on the substrate in accordance with the recipe stored in the storage unit; and an input unit for inputting a recipe for the plasma process on the substrate A recipient input unit, and a recipient A determination unit that determines whether or not breakage occurs in the window member when plasma processing is performed; and a control unit that refuses registration of the recipe to the storage unit when the determination unit determines that breakage has occurred in the window member, And a registration unit for registering the recipe to the storage unit when the determination unit determines that no breakage occurs in the storage unit.

The plasma processing apparatus of the second aspect is characterized in that, in the plasma processing apparatus of the first aspect, the window member is made of a dielectric, and the judging section judges whether or not breakage of the dielectric occurs.

The plasma processing apparatus of the third aspect is the plasma processing apparatus of the first aspect, wherein the window member has a dielectric body and a dielectric cover provided on the plasma generation region side with respect to the dielectric body, It is determined whether or not breakage occurs in the cover.

In the plasma processing apparatus of the fourth aspect, in the plasma processing apparatus of the first aspect, the window member has a metal and a dielectric cover provided on the side of the plasma generation region with respect to the metal, It is determined whether or not breakage occurs in the cover.

In the plasma processing apparatus according to the fifth aspect, in the plasma processing apparatus according to any one of the first to fourth aspects, the judgment section repeats the plasma process with the recipe having the input section repeatedly, Calculating a difference between a predicted arrival temperature at a plurality of predicted temperature points set in the window member by using a predetermined calculation formula and when the difference is smaller than a predetermined threshold value, It is determined that there is no abnormality.

In the plasma processing apparatus of the sixth aspect, in the plasma processing apparatus of the fifth aspect, the plurality of temperature prediction points include at least a point directly below the inductively coupled antenna and a point on the periphery of the window member .

In the plasma processing apparatus of the seventh aspect, in the plasma processing apparatus of the fifth aspect, the plurality of temperature prediction points include at least one point directly below the inductively coupled antenna and two points on the periphery of the window member Wherein the determination unit calculates a first difference and a second difference between a predicted arrival temperature of a point immediately below the inductively coupled antenna and a predicted arrival temperature of each of two points on the periphery of the window member, And determines that no breakage occurs in the window member when the difference is smaller than the first threshold value and the second difference is smaller than the second threshold value.

In the plasma processing apparatus of the eighth aspect, in the plasma processing apparatus of the fifth aspect, the plurality of temperature prediction points include at least one point directly below the inductively coupled antenna and two points on the periphery of the window member Wherein the determination unit calculates a first difference and a second difference between a predicted arrival temperature of a point immediately below the inductively coupled antenna and a predicted arrival temperature of each of two points on the periphery of the window member, And determines that no breakage occurs in the window member when the sum of the difference and the second difference is smaller than the third threshold value.

In order to achieve the above object, a control method of a plasma processing apparatus according to a ninth aspect is a control method for a plasma processing apparatus, comprising: supplying inductively coupled antenna with high frequency power to induce inductively coupled plasma in a plasma generation region in a chamber, Wherein the plasma processing apparatus further comprises: an input step of receiving an input of a recipe for plasma processing on the substrate; and a control step of controlling the plasma generation area and the inductively coupled antenna A determination step of determining whether or not breakage occurs in the dielectric member included in the window member disposed between the window member and the window member; When it is determined that no breakage occurs in the member, A registration step of registering the recipe in an initial storage section and an execution step of executing a plasma process on the substrate in accordance with the recipe stored in the storage section by the registration step, And calculating a difference between the predicted arrival temperatures at the plurality of temperature prediction points set for the window member when the temperature of the window member becomes equal to the predetermined temperature by using a predetermined calculation formula, And determines that the window member is not damaged when the difference is smaller than the threshold value and determines that the window member is damaged when the difference is equal to or larger than the predetermined threshold value.

In order to achieve the above object, a tenth form storage medium is a plasma processing apparatus for supplying a high frequency power to an inductively coupled antenna to generate inductively coupled plasma in a plasma generation region in a chamber, A control program for causing a computer to execute a control step executed in a plasma processing apparatus to be executed, the control step comprising: an input step of receiving an input of a recipe for plasma processing on the substrate; A determination step of determining whether or not breakage occurs in a dielectric member included in a window member disposed between the plasma generation region and the inductively coupled antenna when processing is performed; and a determination step of determining that breakage occurs in the window member If it is determined that the recipe is stored in the storage unit A registration step of registering the recipe in the storage unit when it is determined that the window member is not broken and the breakage does not occur; and a step of performing plasma processing on the substrate in accordance with the recipe stored in the storage unit by the registration step Wherein the plasma processing is repeatedly executed in the recipe to determine a predicted temperature at a plurality of temperature prediction points set for the window member when the temperature of the window member is in a state of equilibrium, Determining that the window member is not broken when the difference is smaller than the predetermined threshold value and determining that the window member is damaged when the difference is equal to or larger than the predetermined threshold value .

According to the present invention, a plurality of temperature prediction points are set in the window member of the plasma processing apparatus, and based on the input recipe, a predicted arrival between temperature prediction points when the temperature of the window member rises due to heat input from the plasma The temperature difference is calculated and compared with the threshold value to determine whether or not breakage has occurred in the window member when the plasma process is performed based on the recipe. As a result, when it is determined that there is a risk of breakage of the window member, registration with the recipe of the recipe is rejected, and execution of the plasma process by the recipe is disabled. Thus, breakage of the window member can be avoided without depending on setting of sensory or empirical processing conditions by the operator.

1 is a perspective view showing a schematic configuration of a substrate processing system including a plasma processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus included in the substrate processing system of FIG.
Fig. 3 is a flowchart of recipe registration availability judgment processing in the control apparatus of the substrate processing system of Fig.
Fig. 4 is a diagram schematically showing a temperature predicted point set for a window member included in the plasma processing apparatus of Fig. 2 and schematically showing a temperature calculation model of a temperature predicted point.
5 is a diagram schematically showing a calculation result of a predicted temperature reached at a temperature predicted point shown in Fig. 4, and Fig. 5 is a diagram schematically showing an example in which a predicted arrival temperature difference is larger than a threshold value and an example in which a predicted arrival temperature difference is smaller.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 is a perspective view showing a schematic structure of a substrate processing system 10 including a plasma processing apparatus 11 according to the present embodiment.

The substrate processing system 10 includes three plasma processing apparatuses 11 for performing plasma processing, for example, plasma etching, on a substrate G for FPD such as a glass substrate. Each of the three plasma processing apparatuses 11 is connected to a side surface of a transport chamber 12 having a polygonal horizontal cross section (for example, a horizontal cross section is rectangular) through a gate valve 13. The configuration of the plasma processing apparatus 11 will be described later with reference to Fig.

The transfer chamber 12 is also connected to the load lock chamber 14 through a gate valve 15. The substrate loading / unloading mechanism 16 is provided adjacently to the load lock chamber 14 through the gate valve 17. Two indexers 18 are provided adjacent to the substrate loading / unloading mechanism 16. In the indexer 18, a cassette 19 for storing the substrate G is mounted. A plurality of (for example, 25) substrates G can be accommodated in the cassette 19.

The overall operation of the substrate processing system 10 is controlled by the control device 100. [ The control apparatus 100 includes a microcomputer 101 for executing arithmetic processing and a storage section 102 for storing programs and parameters executed by the microcomputer 101 and recipes for plasma processing. The control apparatus 100 also includes an operation section 103 that receives an operation of the operator as a user interface and also provides various information in the substrate processing system 10 to the operator.

When plasma etching is performed on the substrate G in the substrate processing system 10, first, the substrate G housed in the cassette 19 is carried into the load lock chamber 14 by the substrate loading / unloading mechanism 16. At this time, if the plasma-etched substrate G is present inside the load lock chamber 14, the plasma-etched substrate G is carried out from the load lock chamber 14 and replaced with the non-etched substrate G. When the substrate G is carried into the load lock chamber 14, the gate valve 17 is closed.

Then the gate valve 15 between the transfer chamber 12 and the load lock chamber 14 is opened after the inside of the load lock chamber 14 is depressurized to a predetermined degree of vacuum. The gate valve 15 is closed after the substrate G inside the load lock chamber 14 is carried into the transfer chamber 12 by the transfer mechanism (not shown) inside the transfer chamber 12. [

Next, the gate valve 13 between the transport chamber 12 and the plasma processing apparatus 11 is opened, and the micro etching substrate G is carried into the plasma processing apparatus 11 by the transport mechanism. At this time, if there is a plasma-etched substrate G inside the plasma processing apparatus 11, the plasma-etched substrate G is carried out and replaced with the non-etched substrate G. Thereafter, plasma etching is performed on the substrate G carried by the plasma processing apparatus 11. [

2 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus 11. As shown in Fig. Specifically, the plasma processing apparatus 11 is an inductively coupled plasma processing apparatus. The plasma processing apparatus 11 includes a substantially rectangular chamber 20 (processing chamber), a mounting table 21 disposed below the chamber 20 to mount the substrate G thereon, A window member 22 arranged so as to face the mount table 21 and an inductively coupled antenna 50 composed of a spiral conductor disposed above the window member 22. [ Between the mount table 21 and the window member 22, a processing space S, which is an area where inductively coupled plasma is generated, is formed.

The mounting table 21 houses a susceptor 23 made of a conductor and the bias high frequency power supply 24 is connected to the susceptor 23 through a matching device 25. An electrostatic attraction portion (ESC) 26 formed of a layered dielectric is disposed on the mounting table 21, and the electrostatic adsorption portion 26 is disposed on the upper surface of the mounting table 21 so as to be sandwiched between the upper dielectric layer and the lower dielectric layer And an electrostatic adsorption electrode (27). A DC power source 28 is connected to the electrostatic adsorption electrode 27. When the DC power source 28 applies a DC voltage to the electrostatic adsorption electrode 27, the electrostatic adsorption unit 26 is electrostatically attracted to the table 21 ) Is electrostatically adsorbed. The bias high frequency power supply 24 supplies a relatively low frequency high frequency power to the susceptor 23 to cause a DC bias potential on the electrostatically attracted substrate G to the electrostatic attraction portion 26. The electrostatic attraction portion 26 may be formed as a plate member, or may be formed as a thermal sprayed film on the stage 21.

The mount table 21 houses a refrigerant passage 29 for controlling the temperature of the susceptor 23 and the refrigerant passage 29 is connected to a refrigerant supply mechanism (not shown). The mount table 21 also has a heat transfer gas supply mechanism 30 for promoting heat transfer between the mount table 21 and the substrate G. [ The heat transfer gas supply mechanism 30 has a heat transfer gas supply source 31 and a gas flow rate controller 32 and supplies the heat transfer gas to the mount table 21. The mount table 21 has a plurality of heat transfer gas holes 33 opened at an upper portion thereof and a heat transfer gas supply path 34 for communicating the respective heat transfer gas holes 33 and the heat transfer gas supply mechanism 30 . A minute gap is formed between the back surface of the substrate G electrostatically attracted to the electrostatic attraction portion 26 and the upper portion of the mount table 21 in the mount table 21 but the heat transfer gas The heat transfer efficiency between the substrate G and the mount table 21 can be improved and the cooling efficiency of the substrate G by the mount table 21 can be improved.

A gas supply port 40 for supplying a process gas into the chamber 20 is provided above the side wall of the chamber 20 and a process gas supply mechanism 35 is connected to the gas supply port 40. The process gas supply mechanism 35 has a process gas supply source 36, a gas flow rate controller 37, and a pressure control valve 38. The processing gas supplied from the processing gas supply mechanism 35 to the gas supply port 40 is introduced into the processing space S from the gas supply port 40. The gas supply port 40 may be provided on the window member 22.

The inductively coupled antenna 50 is connected to a plasma generating high frequency power source 41 via a matching device 42 and the plasma generating high frequency power source 41 is connected to the inductively coupled And supplies it to the antenna 50. The inductively coupled antenna 50 to which the plasma generating high-frequency power is supplied causes an electric field in the processing space S.

The window member 22 is made of a dielectric or metal. When the window member 22 is made of a dielectric, it is made of, for example, quartz or ceramics. When the window member 22 is made of metal, it is made of, for example, aluminum. In this case, in order to protect a member (for example, a member made of metal) provided between the members from the plasma, the window member 22 may be formed of a plurality of members, And a dielectric cover is provided on the S side. The dielectric cover is made of, for example, quartz or ceramic.

The plasma processing apparatus 11 is provided with an exhaust pipe 43 communicating with the inside of the chamber 20 and exhausting the gas inside the chamber 20 through the exhaust pipe 43 and exhausting the inside of the chamber 20 It is possible to make a predetermined reduced pressure state.

The operation of each component of the plasma processing apparatus 11 is controlled by the device controller 44 executing a predetermined program under the general control by the control apparatus 100 of the substrate processing system 10. [ do.

When plasma etching is performed on the substrate G by the plasma processing apparatus 11, the processing space S is depressurized, the processing gas is introduced into the processing space S, and the high frequency electric power for plasma generation . As a result, an electric field is generated in the processing space S. The processing gas introduced into the processing space S is excited by an electric field to generate plasma, and the positive ions in the plasma are attracted to the substrate G by the DC bias potential generated on the substrate G through the stage 21, Plasma etching is performed. The radicals in the plasma reach the substrate G and perform plasma etching on the substrate G.

In the plasma processing apparatus 11, the inductively coupled antenna 50 is disposed so as to cover the entire surface of the substrate G, whereby plasma can be generated so as to cover the entire surface of the substrate G, Plasma etching can be performed uniformly. At this time, the temperature of the window member 22 rises due to heat input from the plasma to the window member 22, and the temperature rises from the central portion immediately below the inductively coupled antenna 50 having a high plasma density toward the peripheral portion having a small plasma density A lower temperature distribution is generated. Due to this temperature distribution, the dielectric (the window member 22 made of a dielectric or the dielectric cover covering the window member 22) constituting the window member 22 has a three-dimensional deformation due to uneven thermal expansion Internal stress is generated, and there is a possibility that the dielectric constituting the window member 22 is damaged by the generated internal stress.

Here, in order to execute the desired plasma processing by the operator in the plasma processing apparatus 11, an operator operates the operating unit 103 to input a recipe in which a series of processing conditions are collected into the control apparatus 100. [ The inputted recipe is registered in the control device 100 by being stored in the storage unit 102 such as a semiconductor memory provided in the control device 100. [ The microcomputer 101 included in the control apparatus 100 controls the apparatus controller 44 so that the plasma process is executed in accordance with the registered recipe.

In the present embodiment, when the recipe is inputted to the control device 100, before the plasma process is executed according to the recipe inputted, when the plasma process is performed according to the inputted recipe, the window member 22 It is determined by the microcomputer 101 whether or not there is a possibility of causing damage to the constituent dielectric. When it is determined that there is a possibility of causing damage to the dielectric constituting the window member 22, registration of the recipe in the control device 100 is rejected, and therefore, 22 are prevented from being damaged. Hereinafter, the configuration will be described.

The control device 100 has a program for inputting a recipe of a plasma process to be executed in the plasma processing apparatus 11 (hereinafter referred to as a "recipe input program") and a dielectric constituting the window member 22 (Hereinafter referred to as " breakage avoiding program ") for avoiding the breakage of the window member 22 in the storage unit 102 such as a semiconductor memory or a hard disk, And is executed by the microcomputer 101 of the apparatus 100. The control unit 100 includes an operation unit 103 as a user interface. The operation unit 103 has an operation screen (touch panel), operation buttons, operation keys, and the like.

Fig. 3 is a flowchart of recipe registration availability judgment processing in the control apparatus 100. Fig. First, in step S1, the operator of the substrate processing system 10 activates a recipe input program by operating an operation screen, an operation button, and an operation key provided on the control device 100, And inputs a recipe of the plasma process to be executed. As the recipe input, a recipe is newly created or a recipe whose registration is completed in the control device 100 is edited. Herein, the recipe input also includes transmitting a recipe to the control device 100 from outside through a communication line. The recipe is not particularly limited, but it is composed of a pressure adjustment in the process chamber (a process gas introduction and exhaust (vacuum suction)) pattern, an application pattern of high frequency power (frequency, voltage), and the like. Recipe input can be performed by a well-known method, and a description thereof will be omitted.

In step S1, the damage avoidance program is started by linking to the start of the recipe input program. Subsequently, in step S2, the operator of the substrate processing system 10 registers the recipe inputted in step S1 in the control device 100. This enrollment enforcement can be started by pressing the " Enroll " button if the configuration is such that the " Enrollment " button is displayed on the operation screen for inputting a recipe, for example.

Next, in step S3, the control device 100 executes a damage avoidance program for the recipe inputted in step S1, calculates the predicted arrival temperature of a plurality of predetermined temperature prediction points with respect to the window member 22 do. In the succeeding step S4, the control device 100 obtains the difference (predicted arrival temperature difference) of the predicted arrival temperatures of the plurality of temperature prediction points calculated in step S3 by the damage avoidance program in execution, The thresholds are compared to determine whether the predicted arrival temperature difference is smaller than the threshold value. Details of the plurality of temperature prediction points, the predicted arrival temperatures, and the threshold values will be described later.

If the predicted arrival temperature difference is smaller than the threshold value (YES in S4), the process proceeds to step S5, and if the predicted arrival temperature difference is equal to or larger than the threshold value (NO in S4), the control device 100 proceeds to step S6. In step S5, the control device 100 permits the registration of the recipe inputted in step S1, and registers the recipe. At this time, a message is displayed on the operation screen indicating that the recipe registration is normally completed. Then, in step S5, the present process is terminated. When another recipe is to be registered, the operator may resume the processing from step S1. On the other hand, in step S6, the control device 100 rejects the registration of the recipe entered in step S1, displays a message on the operation screen indicating that the recipe registration can not be performed, and also requests the editing of the recipe The message is displayed on the operation screen. The control device 100 returns the processing to step S1 after step S6.

The processing of steps S3 and S4 described above will be described in detail. Fig. 4 (a) is a diagram schematically showing a temperature predicted point set for the window member 22. Fig. Here, the temperature predicted point P1 is set at the center position of the window member 22, and the temperature predicted point P2 is set at the center of the long side edge. The temperature predicted point P1 immediately below the inductively coupled antenna 50 is set as an example of a position where the temperature of the window member 22 becomes relatively higher than other positions at the time of plasma processing, And is set as an example of a position where the temperature of the window member 22 becomes relatively lower than other positions during plasma processing.

The position where the temperature of the window member 22 becomes higher and the temperature of the window member 22 become higher than those of the other portions in the plasma processing depend on the pattern of the inductively coupled antenna 50, respectively. For example, in the case where a plurality of inductively coupled antennas other than the single spiral antenna as shown in Fig. 4 (a) are arranged on the window member 22 in one column or a plurality of columns, 22 may not be located at the position where the temperature is relatively highest. Therefore, the temperature measurement point is provided at a position where the temperature is relatively high and a position where the temperature is relatively low, in accordance with the pattern of the inductively coupled antenna. Preferably, the temperature measurement point is provided at the position where the temperature is highest and the position where the temperature is lowest.

Fig. 4 (b) is a diagram schematically showing a temperature calculation model of temperature prediction points P1 and P2. The heat generated from the plasma is generated in the window member 22 and also the heat is released from the window member 22 to the environment so that the difference between the amount of heat input and the amount of heat radiation contributes to the temperature rise of the window member 22. In the plasma processing apparatus 11, usually, the plurality of substrates G are sequentially exchanged and processed one by one. Therefore, the temperature of the window member 22 is set such that the recipe is repeated and the substrate G is processed ). ≪ / RTI > However, when the predetermined number of substrates G are processed, the amount of heat input to the window member 22 and the amount of heat radiation are balanced, so that the window member 22 reaches a state of equilibrium in which the temperature becomes almost constant.

The temperature change from the initial temperature of the temperature predicted points P1 and P2 when the window member 22 reaches the equilibrium state is obtained by calculation,

(1-exp (- time / time constant)) ", "

&Quot; Heat release amount = (temperature of predicted temperature - ambient temperature) x thermal resistance &

&Quot; Input heat amount = (a x processing chamber pressure ^ b) x (c x RF) "

Can be used.

In the above equations, " thermal resistance " is a value at a temperature predicted point, and " RF " is a high-frequency power value for generating plasma. The predicted arrival temperatures TP1 and TP2 of the temperature predicted points P1 and P2 when the window member 22 reaches the equilibrium state are obtained as the sum of the calculated " temperature change " and the initial temperature (room temperature).

The values of the coefficients a, b, and c of the equation representing the heat input amount and the value of the heat resistance for calculating the amount of heat radiation can be obtained by using the plasma processing apparatus 11 which is an actual apparatus, The temperatures of the temperature predicted points P1 and P2 are actually measured, and based on the obtained results, the actual measurement results are determined to be reproduced as accurately as possible. This makes it possible to increase the reliability with respect to the calculated predicted arrival temperatures TP1 and TP2.

Fig. 5 (a) is a diagram schematically showing the calculation results of the predicted arrival temperatures TP1 and TP2 by the above-mentioned calculation formula. When the plasma processing of one substrate G is started, the temperature of the window member 22 rises because the heat input amount from the plasma exceeds the heat radiation amount. However, when plasma generation is terminated and generation of the plasma is stopped, ) Is lowered by heat radiation. The temperature of the window member 22 also changes with respect to the following substrate G as well. The temperature of the window member 22 gradually increases as the substrate G is processed one by one because the amount of heat input is larger than the amount of heat radiation at first. However, when the predetermined number of the substrates G are processed and the temperature of the window member 22 becomes high Since the amount of heat radiation also increases, the temperatures of the temperature predicted points P1 and P2 are stabilized at the temperatures TP1 and TP2, respectively, resulting in an equilibrium state.

In the case of the above calculation formula, it is confirmed that the temperatures of the temperature predicted points P1 and P2 already reach the predicted arrival temperatures TP1 and TP2, respectively, for example, when the plasma processing of the substrate G of 60 sheets is completed. Thus, in step S3, for example, the predicted arrival temperatures TP1 and TP2 when the recipe is executed 60 times are calculated. In step S4, a predicted arrival temperature difference DELTA T1 between predicted arrival temperatures TP1 and TP2 is determined, and it is determined whether or not the predicted arrival temperature difference is smaller than a predetermined threshold value. Therefore, the initial temperatures of the temperature predicted points P1 and P2 are canceled when the predicted arrival temperature difference? T1 is obtained, so that this does not become a problem of this determination.

5B is a diagram schematically showing an example in which the predicted arrival temperature difference DELTA T1 is larger than the threshold value. In this case, the determination in step S4 is NO, and the process proceeds to step S6. Fig. 5C is a diagram schematically showing an example in which the predicted arrival temperature difference DELTA T1 becomes smaller than the threshold value. In this case, the determination in step S4 becomes YES, and the process proceeds to step S5.

The fact that the predicted arrival temperature difference? T1 is large means that the temperature distribution in the window member 22 is largely biased and a large stress is generated in the window member 22 and breakage is likely to occur. The threshold value is the upper limit value of the temperature difference at which the window member 22 is not broken even when the temperature distribution is generated in the window member 22 and the threshold value is set by the actual apparatus (plasma processing apparatus 11) Or may be determined on the basis of the result of the temperature measurement of the window member 22, or on the basis of the result of the simulation by the finite element method or the like. The threshold value is set according to the specification of the plasma processing apparatus 11 because it differs depending on the area and thickness of the window member 22, the pattern of the inductively coupled antenna 50, the dielectric material used, and the like.

In addition, the threshold value also limits the recipe that can be executed in the plasma processing apparatus 11. Therefore, if an extremely small value is set as a threshold value in order to avoid the breakage of the window member 22, feasible processing is limited and the range (kind) of producible products is narrowed.

As a method for avoiding this problem, there is a method of providing a plurality of threshold values. The plurality of threshold values allow the registration of the recipe to be allowed for execution of the plasma process and the threshold value (hereinafter referred to as " upper limit threshold value " (Hereinafter referred to as " normal threshold value ") to warn the operator that there is a possibility of breakage of the window member 22. When the predicted arrival temperature difference DELTA T1 is equal to or greater than the upper limit threshold value, the same handling as in Fig. 5B is performed. When the predicted arrival temperature difference DELTA T1 is smaller than the normal threshold value, the same treatment as in Fig.

When the predicted arrival temperature difference DELTA T1 is equal to or higher than the normal threshold value and becomes less than the upper limit threshold value, a limitation is set on the number of processed substrates G so that the recipe can be executed, the limit number is displayed on the operation screen, The apparatus 100 may automatically limit the number of sheets when the recipe is executed. This is because, as shown in Figs. 5 (b) and 5 (c), the temperature difference (TP1-TP2) increases each time the number of processed substrates G increases, and therefore when the predicted arrival temperature difference ΔT1 exceeds the normal threshold The breakage of the window member 22 can be avoided within a range of the predetermined number of times at which the temperature difference does not exceed the normal threshold value. Likewise, even when the predicted arrival temperature difference? T1 exceeds the upper limit threshold value, the number of processed substrates G can be limited within a certain number of times at which the temperature difference does not exceed the normal threshold value, and the recipe can be executed.

By limiting the number of treatments as described above, it is possible to widen the range of the recipe that can be registered while avoiding breakage of the window member 22. [ The number of plasma processable cases in this case may be set by taking the safety coefficient into account in the temperature difference between the temperature predicted points P1 and P2 obtained in the process of obtaining the predicted arrival temperature difference? T1.

Up to this point, a description has been given of a mode in which breakage of the window member 22 is avoided based on the predicted temperature difference? T1 between two points of the temperature predicted points P1 and P2. Next, in addition to the temperature predicted points P1 and P2, For example, a mode in which the temperature predicted point P3 is set at the edge of the window member 22 and the breakage of the window member 22 is avoided will be described.

When the temperature predicted points P1 to P3 are set, based on the input recipe, two predicted temperature points P1 and P3 (first difference) are obtained in addition to the predicted temperature difference? T1 (first difference) between two points of the temperature predicted points P1 and P2 (Second difference) between the predicted arrival temperature difference? A threshold value TH1 (first threshold value) is set for the predicted arrival temperature difference DELTA T1, and it is determined whether or not the predicted arrival temperature difference DELTA T1 is smaller than the threshold value TH1. Similarly, a threshold value TH2 (second threshold value) is set for the predicted arrival temperature difference DELTA T2, and it is determined whether or not the predicted arrival temperature difference DELTA T2 is smaller than the threshold value TH2. As a result, the recipe registration is permitted when the predicted arrival temperature difference? T1 is smaller than the threshold value TH1 and the predicted arrival temperature difference? T2 is smaller than the threshold value TH2, and in other cases, the recipe registration is not permitted. As a result, breakage of the window member 22 can be more reliably avoided.

When the predicted temperature points P1 to P3 are set, the threshold value TH3 (third threshold value) is set for the sum of the predicted arrival temperature differences DELTA T1 and DELTA T2, and it is judged whether or not the sum of the predicted arrival temperature differences DELTA T1 and DELTA T2 is smaller than the threshold value TH3 , The recipe registration may be permitted when the sum of the predicted arrival temperature differences? T1 and? T2 is smaller than the threshold value TH3. Further, the temperature prediction point may be provided more than three points, and the judgment method at that time corresponds to the case of three points. Since deformation of the window member 22 due to thermal expansion of the window member 22 due to heat input from the plasma occurs in a three-dimensional manner, it is possible to more reliably avoid breakage of the window member 22 by increasing the temperature predicted point .

The present invention has been described using the above embodiment, but the present invention is not limited to the above embodiment. For example, in the above-described embodiment, a description has been given of a mode in which the damage avoidance program of the window member 22 is stored in the control device 100 and is executed in the control device 100. [ On the contrary, the object of the present invention is to provide a control apparatus 100 that supplies a storage medium on which a program code of software for realizing the functions of the above-described embodiments is recorded, and the microcomputer 101 of the control apparatus 100 And reading out and executing the program code stored in the storage medium.

In this case, the program code itself read from the storage medium realizes the functions of the above-described embodiment, and the storage medium storing the program code and the program code constitutes the present invention. A CD-ROM, a CD-R, a CD-RW, a DVD (a DVD-ROM, a CD-ROM, An optical disk such as a DVD-RAM, a DVD-RW, or a DVD + RW), a magnetic tape, a nonvolatile memory card, or another ROM. Alternatively, the program code may be supplied to the control device 100 by downloading from another computer or database (not shown) connected to the Internet, a commercial network, or a LAN.

The damage preventing program of the window member 22 may be executed on a general personal computer which is separate from the control device 100. [ For example, the breakage avoiding program of the window member 22 and the program (software) capable of inputting the recipe of the plasma process are linked or integrated. Then, the operator of the substrate processing system 10 activates the recipe input program on the personal computer, and inputs the recipe. When the input of the recipe ends, a program for avoiding the breakage of the window member 22 is executed quickly, and it is judged whether the input recipe is a recipe which can be registered in the control device 100 or not. The operator can provide a rule that the same recipe can be input to the control device 100 only when it is determined that registration is possible.

In the plasma processing apparatus 11 according to the present invention, a plasma etching apparatus is adopted as the substrate. However, the present invention is not limited to this, and other plasma processing apparatuses such as a film forming apparatus, an ashing apparatus, and an ion implanting apparatus may be used. Although the glass substrate for FPD is adopted as the substrate G, the present invention can be applied to other substrates (for example, semiconductor wafers).

10: substrate processing system
11: Plasma processing device
21: Mounting table
22: window member
41: High-frequency power source for generating plasma
44: Device controller
50: Inductively Coupled Antenna
100: Control device
101: Microcomputer
102:
103:

Claims (10)

1. A plasma processing apparatus for performing plasma treatment on a substrate accommodated in a chamber by generating inductively coupled plasma in a plasma generation region in the chamber,
An inductive coupling antenna for generating the inductively coupled plasma in the plasma generating region,
A window member disposed between the plasma generation region and the inductively coupled antenna,
A controller for controlling plasma processing on the substrate;
And,
Wherein,
A storage unit for storing a recipe of plasma processing on the substrate;
An execution unit that executes plasma processing on the substrate in accordance with the recipe stored in the storage unit;
An input unit for receiving an input of a recipe for plasma processing on the substrate;
A judging unit for judging whether or not breakage occurs in the window member when the plasma process is performed on the recipe having the input unit;
The registration of the recipe to the storage unit is rejected when the judgment unit judges that the window member is broken, and the registration of the recipe to the storage unit when the judgment unit judges that the window member is not broken Registered party
Having a
And the plasma processing apparatus.
The method according to claim 1,
Wherein the window member is made of a dielectric material,
Wherein the judging section judges whether or not the dielectric is broken
And the plasma processing apparatus.
The method according to claim 1,
Wherein the window member has a dielectric and a dielectric cover provided on the plasma generation region side with respect to the dielectric,
The judging section judges whether or not breakage of the dielectric cover occurs
And the plasma processing apparatus.
The method according to claim 1,
Wherein the window member has a metal and a dielectric cover provided on the plasma generation region side with respect to the metal,
The judging section judges whether or not breakage of the dielectric cover occurs
And the plasma processing apparatus.
5. The method according to any one of claims 1 to 4,
Wherein the determination unit repeatedly executes the plasma process with the recipe having the input unit and calculates a difference between the predicted arrival temperatures at the plurality of temperature prediction points set for the window member when the temperature of the window member becomes a balanced state, And determines that no breakage occurs in the window member when the difference is smaller than a predetermined threshold value.
6. The method of claim 5,
Wherein the plurality of temperature prediction points include at least one point immediately below the inductively coupled antenna and one point on the periphery of the window member.
6. The method of claim 5,
Wherein the plurality of temperature prediction points include at least one point directly below the inductively coupled antenna and two points on the periphery of the window member,
Wherein the determination unit calculates a first difference and a second difference between a predicted arrival temperature of a point immediately below the inductively coupled antenna and a predicted arrival temperature of each of two points on the periphery of the window member, And determines that no breakage occurs in the window member when the second difference is smaller than the first threshold value and the second difference is smaller than the second threshold value
And the plasma processing apparatus.
6. The method of claim 5,
Wherein the plurality of temperature prediction points include at least one point directly below the inductively coupled antenna and two points on the periphery of the window member,
Wherein the determination unit calculates a first difference and a second difference between a predicted arrival temperature of a point immediately below the inductively coupled antenna and a predicted arrival temperature of each of two points on the periphery of the window member, When the sum of the second differences is smaller than the third threshold value, it is determined that the window member is not broken
And the plasma processing apparatus.
1. A control method of a plasma processing apparatus which applies plasma treatment to a substrate accommodated in the chamber by supplying inductively coupled plasma to an inductively coupled antenna to generate inductively coupled plasma in a plasma generation region in the chamber,
An input step of receiving an input of a recipe of plasma processing on the substrate;
A judging step of judging whether or not breakage occurs in a dielectric member included in a window member disposed between the plasma generating region and the inductively coupled antenna when the plasma treatment is performed in the recipe;
A registration step of registering the recipe in the storage unit when it is determined that the recipe is not registered in the storage unit and the breakage does not occur in the window member when it is judged by the judging step that breakage has occurred in the window member ,
An execution step of executing a plasma process on the substrate in accordance with the recipe stored in the storage unit by the registration step
Lt; / RTI &
And the determination step determines whether or not the difference between the predicted arrival temperatures at the plurality of temperature prediction points set in the window member when the temperature of the window member becomes equal to the plasma component in the recipe is repeatedly determined using a predetermined calculation formula And determines that the window member is not damaged when the difference is smaller than the predetermined threshold value and determines that the window member is damaged when the difference is equal to or larger than the predetermined threshold value
And a control unit for controlling the plasma processing apparatus.
A control step executed in a plasma processing apparatus for performing plasma processing on a substrate accommodated in the chamber by generating inductively coupled plasma in a plasma generation region in the chamber by supplying high frequency power to the inductively coupled antenna A storage medium storing a program for causing a computer to function as:
Wherein, in the control step,
An input step of receiving an input of a recipe of plasma processing on the substrate;
A judging step of judging whether or not breakage occurs in a dielectric member included in a window member disposed between the plasma generation region and the inductively coupled antenna when the plasma treatment is performed in the recipe;
A registration step of registering the recipe in the storage unit when it is determined that the recipe is not registered in the storage unit and the breakage does not occur in the window member when it is judged by the judging step that breakage has occurred in the window member; ,
An execution step of executing a plasma process on the substrate in accordance with the recipe stored in the storage unit by the registration step
Lt; / RTI &
And the determination step determines whether or not the difference between the predicted arrival temperatures at the plurality of temperature prediction points set for the window member when the temperature of the window member reaches the equilibrium state by repeatedly executing the plasma processing in the recipe And determines that the window member is not damaged when the difference is smaller than the predetermined threshold value and determines that the window member is damaged when the difference is equal to or larger than the predetermined threshold value
And a storage medium storing the program.

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